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You searched for subject:(High Temperature Gallium Nitride). Showing records 1 – 30 of 45116 total matches.

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Indian Institute of Science

1. Yaddanapudi, G R Krishna. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.

Degree: PhD, Faculty of Engineering, 2017, Indian Institute of Science

 Group III-Nitrides (GaN, InN & AlN) are considered one of the most important class of semiconducting materials after Si and GaAs. The excellent optical and… (more)

Subjects/Keywords: Semiconductors; Nitrides; Gallium Nitride; N-Polar Gallium Nitride; Metal Organic Chemical Vapor Deposition (MOCVD); Galllium Nitride Growth; High Temperature Gallium Nitride; Low Temperature Gallium Nitride; GaN; Materials Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yaddanapudi, G. R. K. (2017). Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/2662

Chicago Manual of Style (16th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2017. Doctoral Dissertation, Indian Institute of Science. Accessed January 23, 2021. http://etd.iisc.ac.in/handle/2005/2662.

MLA Handbook (7th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2017. Web. 23 Jan 2021.

Vancouver:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2017. [cited 2021 Jan 23]. Available from: http://etd.iisc.ac.in/handle/2005/2662.

Council of Science Editors:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Doctoral Dissertation]. Indian Institute of Science; 2017. Available from: http://etd.iisc.ac.in/handle/2005/2662


NSYSU

2. chienhui, Chen. Fabrication and photocatalysis of porous GaN crystal.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 Abstract The aim of the present study is to synthesize gallium nitride photocatalysis with high specific surface area, which we expect it can promote degradation… (more)

Subjects/Keywords: lithium gallium oxide; porous gallium nitride; photocatalysis; high specific surface area

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APA (6th Edition):

chienhui, C. (2014). Fabrication and photocatalysis of porous GaN crystal. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-093333

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

chienhui, Chen. “Fabrication and photocatalysis of porous GaN crystal.” 2014. Thesis, NSYSU. Accessed January 23, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-093333.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

chienhui, Chen. “Fabrication and photocatalysis of porous GaN crystal.” 2014. Web. 23 Jan 2021.

Vancouver:

chienhui C. Fabrication and photocatalysis of porous GaN crystal. [Internet] [Thesis]. NSYSU; 2014. [cited 2021 Jan 23]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-093333.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

chienhui C. Fabrication and photocatalysis of porous GaN crystal. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-093333

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

3. Faiza Afroz Faria. MBE Growth of GaN Heterostructures for High Performance HEMTs</h1>.

Degree: Electrical Engineering, 2015, University of Notre Dame

  GaN-based high electron mobility transistors (HEMTs) are promising for high speed and high power electronics applications. AlN and In0.17Al0.83N enable maximum possible vertical scaling… (more)

Subjects/Keywords: gallium nitride; regrown ohmic contact; plasma assisted mbe growth; hall-effect; afm; xrd; mbe regrowth of silicon doped gallium nitride; aluminum nitride; double channel high electron mobility transistor; low temperature mbe growth

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APA (6th Edition):

Faria, F. A. (2015). MBE Growth of GaN Heterostructures for High Performance HEMTs</h1>. (Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/mw22v40828m

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Faria, Faiza Afroz. “MBE Growth of GaN Heterostructures for High Performance HEMTs</h1>.” 2015. Thesis, University of Notre Dame. Accessed January 23, 2021. https://curate.nd.edu/show/mw22v40828m.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Faria, Faiza Afroz. “MBE Growth of GaN Heterostructures for High Performance HEMTs</h1>.” 2015. Web. 23 Jan 2021.

Vancouver:

Faria FA. MBE Growth of GaN Heterostructures for High Performance HEMTs</h1>. [Internet] [Thesis]. University of Notre Dame; 2015. [cited 2021 Jan 23]. Available from: https://curate.nd.edu/show/mw22v40828m.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Faria FA. MBE Growth of GaN Heterostructures for High Performance HEMTs</h1>. [Thesis]. University of Notre Dame; 2015. Available from: https://curate.nd.edu/show/mw22v40828m

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

4. Mohan, Nagaboopathy. Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si.

Degree: PhD, Faculty Of Engineering, 2017, Indian Institute of Science

Gallium Nitride (GaN) and its alloys with InN and AlN, the III-nitrides, are of interest for a variety of high power-high frequency electronics and optoelectronics… (more)

Subjects/Keywords: Gallium Nitrides; Gallium Nitride Alloys; Gallium Nitride; Dislocation Reduction; Gallium Nitride on Silicon; High Electron Mobility Transistors; Si Doping; GaN; Materials Science

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APA (6th Edition):

Mohan, N. (2017). Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/2789

Chicago Manual of Style (16th Edition):

Mohan, Nagaboopathy. “Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si.” 2017. Doctoral Dissertation, Indian Institute of Science. Accessed January 23, 2021. http://etd.iisc.ac.in/handle/2005/2789.

MLA Handbook (7th Edition):

Mohan, Nagaboopathy. “Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si.” 2017. Web. 23 Jan 2021.

Vancouver:

Mohan N. Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2017. [cited 2021 Jan 23]. Available from: http://etd.iisc.ac.in/handle/2005/2789.

Council of Science Editors:

Mohan N. Efficient Dislocation Reduction Methods for Integrating Gallium Nitride HEMTs on Si. [Doctoral Dissertation]. Indian Institute of Science; 2017. Available from: http://etd.iisc.ac.in/handle/2005/2789


University of Toronto

5. Li, Rophina Chi-Wai. Driving Techniques for GaN Power HEMTs.

Degree: 2016, University of Toronto

One of the challenges in the application of GaN power HEMTs is designing the gate driver for optimal performance of the transistors. GaN transistors can… (more)

Subjects/Keywords: Deadtime; Gallium Nitride High Electron Mobility Transistor; Gate Drive; 0544

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APA (6th Edition):

Li, R. C. (2016). Driving Techniques for GaN Power HEMTs. (Masters Thesis). University of Toronto. Retrieved from http://hdl.handle.net/1807/72747

Chicago Manual of Style (16th Edition):

Li, Rophina Chi-Wai. “Driving Techniques for GaN Power HEMTs.” 2016. Masters Thesis, University of Toronto. Accessed January 23, 2021. http://hdl.handle.net/1807/72747.

MLA Handbook (7th Edition):

Li, Rophina Chi-Wai. “Driving Techniques for GaN Power HEMTs.” 2016. Web. 23 Jan 2021.

Vancouver:

Li RC. Driving Techniques for GaN Power HEMTs. [Internet] [Masters thesis]. University of Toronto; 2016. [cited 2021 Jan 23]. Available from: http://hdl.handle.net/1807/72747.

Council of Science Editors:

Li RC. Driving Techniques for GaN Power HEMTs. [Masters Thesis]. University of Toronto; 2016. Available from: http://hdl.handle.net/1807/72747


University of Notre Dame

6. Jia Guo. Lattice Matched Indium Aluminum Nitride High Electron Mobility Transistors with MBE Regrown Ohmic Contacts</h1>.

Degree: Electrical Engineering, 2012, University of Notre Dame

  Ultra-scaled GaN high electron mobility transistors (HEMTs) are attractive candidates for high-power electronics with speed approaching THz, due to its wide bandgap, high electron… (more)

Subjects/Keywords: Gallium Nitride; Regrown Ohmic Contact; MBE; High Electron Mobiltiy Transistors

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APA (6th Edition):

Guo, J. (2012). Lattice Matched Indium Aluminum Nitride High Electron Mobility Transistors with MBE Regrown Ohmic Contacts</h1>. (Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/9p29086349d

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Guo, Jia. “Lattice Matched Indium Aluminum Nitride High Electron Mobility Transistors with MBE Regrown Ohmic Contacts</h1>.” 2012. Thesis, University of Notre Dame. Accessed January 23, 2021. https://curate.nd.edu/show/9p29086349d.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Guo, Jia. “Lattice Matched Indium Aluminum Nitride High Electron Mobility Transistors with MBE Regrown Ohmic Contacts</h1>.” 2012. Web. 23 Jan 2021.

Vancouver:

Guo J. Lattice Matched Indium Aluminum Nitride High Electron Mobility Transistors with MBE Regrown Ohmic Contacts</h1>. [Internet] [Thesis]. University of Notre Dame; 2012. [cited 2021 Jan 23]. Available from: https://curate.nd.edu/show/9p29086349d.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Guo J. Lattice Matched Indium Aluminum Nitride High Electron Mobility Transistors with MBE Regrown Ohmic Contacts</h1>. [Thesis]. University of Notre Dame; 2012. Available from: https://curate.nd.edu/show/9p29086349d

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Virginia Tech

7. Reusch, David Clayton. High Frequency, High Power Density Integrated Point of Load and Bus Converters.

Degree: PhD, Electrical and Computer Engineering, 2012, Virginia Tech

 The increased power consumption and power density demands of modern technologies combined with the focus on global energy savings have increased the demands on DC/DC… (more)

Subjects/Keywords: bus converter; gallium nitride; magnetic integration; point-of-load converter; high frequency; High power density

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APA (6th Edition):

Reusch, D. C. (2012). High Frequency, High Power Density Integrated Point of Load and Bus Converters. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/26920

Chicago Manual of Style (16th Edition):

Reusch, David Clayton. “High Frequency, High Power Density Integrated Point of Load and Bus Converters.” 2012. Doctoral Dissertation, Virginia Tech. Accessed January 23, 2021. http://hdl.handle.net/10919/26920.

MLA Handbook (7th Edition):

Reusch, David Clayton. “High Frequency, High Power Density Integrated Point of Load and Bus Converters.” 2012. Web. 23 Jan 2021.

Vancouver:

Reusch DC. High Frequency, High Power Density Integrated Point of Load and Bus Converters. [Internet] [Doctoral dissertation]. Virginia Tech; 2012. [cited 2021 Jan 23]. Available from: http://hdl.handle.net/10919/26920.

Council of Science Editors:

Reusch DC. High Frequency, High Power Density Integrated Point of Load and Bus Converters. [Doctoral Dissertation]. Virginia Tech; 2012. Available from: http://hdl.handle.net/10919/26920


University of California – Santa Cruz

8. Maize, Kerry. High Resolution Thermoreflectance Imaging of Power Transistors and Nanoscale Percolation Networks.

Degree: Electrical Engineering, 2014, University of California – Santa Cruz

 Performance, efficiency, and reliability of modern high power, high speed microelectronics and nanoscale structures are strongly influenced by device self-heating on the micron and nanometer… (more)

Subjects/Keywords: Electrical engineering; Gallium nitride; nanowire network; Power transistors; Self-heating; Temperature; Thermoreflectance imaging microscopy

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APA (6th Edition):

Maize, K. (2014). High Resolution Thermoreflectance Imaging of Power Transistors and Nanoscale Percolation Networks. (Thesis). University of California – Santa Cruz. Retrieved from http://www.escholarship.org/uc/item/2mg1c0n2

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Maize, Kerry. “High Resolution Thermoreflectance Imaging of Power Transistors and Nanoscale Percolation Networks.” 2014. Thesis, University of California – Santa Cruz. Accessed January 23, 2021. http://www.escholarship.org/uc/item/2mg1c0n2.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Maize, Kerry. “High Resolution Thermoreflectance Imaging of Power Transistors and Nanoscale Percolation Networks.” 2014. Web. 23 Jan 2021.

Vancouver:

Maize K. High Resolution Thermoreflectance Imaging of Power Transistors and Nanoscale Percolation Networks. [Internet] [Thesis]. University of California – Santa Cruz; 2014. [cited 2021 Jan 23]. Available from: http://www.escholarship.org/uc/item/2mg1c0n2.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Maize K. High Resolution Thermoreflectance Imaging of Power Transistors and Nanoscale Percolation Networks. [Thesis]. University of California – Santa Cruz; 2014. Available from: http://www.escholarship.org/uc/item/2mg1c0n2

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

9. Choi, Sukwon. Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods.

Degree: PhD, Mechanical Engineering, 2013, Georgia Tech

 The development of state-of-the-art AlGaN/GaN high electron mobility transistors (HEMTs) has shown much promise for advancing future RF and microwave communication systems. These revolutionary devices… (more)

Subjects/Keywords: Gallium nitride; HEMTs; Photoluminescence; Raman scattering; Semiconductor device reliability; Temperature measurement; Semiconductors; Gallium compounds; Nitrides; Raman effect

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APA (6th Edition):

Choi, S. (2013). Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/49108

Chicago Manual of Style (16th Edition):

Choi, Sukwon. “Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods.” 2013. Doctoral Dissertation, Georgia Tech. Accessed January 23, 2021. http://hdl.handle.net/1853/49108.

MLA Handbook (7th Edition):

Choi, Sukwon. “Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods.” 2013. Web. 23 Jan 2021.

Vancouver:

Choi S. Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2021 Jan 23]. Available from: http://hdl.handle.net/1853/49108.

Council of Science Editors:

Choi S. Stress metrology and thermometry of AlGaN/GaN HEMTs using optical methods. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/49108

10. Bertrand, Dimitri. Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium : Study of the mechanisms involved in the formation of ohmic contacts on power electronics transistors based on Gallium nitride.

Degree: Docteur es, Matériaux, mécanique, génie civil, électrochimie, 2016, Université Grenoble Alpes (ComUE)

Cette thèse s’inscrit dans le cadre du développement d’une filière de transistors de puissance à base de nitrure de Gallium au CEA-LETI. Ces transistors, en… (more)

Subjects/Keywords: Nitrure de Gallium; Hemt; AlGaN/GaN; Contact ohmique; Formation; Gallium nitride; High-Electron-Mobility Transistor; AlGaN/GaN; Ohmic contacts; Formation; 620

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APA (6th Edition):

Bertrand, D. (2016). Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium : Study of the mechanisms involved in the formation of ohmic contacts on power electronics transistors based on Gallium nitride. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2016GREAI060

Chicago Manual of Style (16th Edition):

Bertrand, Dimitri. “Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium : Study of the mechanisms involved in the formation of ohmic contacts on power electronics transistors based on Gallium nitride.” 2016. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed January 23, 2021. http://www.theses.fr/2016GREAI060.

MLA Handbook (7th Edition):

Bertrand, Dimitri. “Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium : Study of the mechanisms involved in the formation of ohmic contacts on power electronics transistors based on Gallium nitride.” 2016. Web. 23 Jan 2021.

Vancouver:

Bertrand D. Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium : Study of the mechanisms involved in the formation of ohmic contacts on power electronics transistors based on Gallium nitride. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2016. [cited 2021 Jan 23]. Available from: http://www.theses.fr/2016GREAI060.

Council of Science Editors:

Bertrand D. Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium : Study of the mechanisms involved in the formation of ohmic contacts on power electronics transistors based on Gallium nitride. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2016. Available from: http://www.theses.fr/2016GREAI060


Penn State University

11. Wang, Li. Gallium Nitride-based Electronic and Optoelectronic devices.

Degree: 2015, Penn State University

 For the past decade, Gallium nitride (GaN) material system has earned a significant place in modern power electronic and optoelectronic devices due to its outstanding… (more)

Subjects/Keywords: gallium nitride; schottky barrier diodes; high electron mobility transistors; light emitting diodes

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APA (6th Edition):

Wang, L. (2015). Gallium Nitride-based Electronic and Optoelectronic devices. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/24758

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Li. “Gallium Nitride-based Electronic and Optoelectronic devices.” 2015. Thesis, Penn State University. Accessed January 23, 2021. https://submit-etda.libraries.psu.edu/catalog/24758.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Li. “Gallium Nitride-based Electronic and Optoelectronic devices.” 2015. Web. 23 Jan 2021.

Vancouver:

Wang L. Gallium Nitride-based Electronic and Optoelectronic devices. [Internet] [Thesis]. Penn State University; 2015. [cited 2021 Jan 23]. Available from: https://submit-etda.libraries.psu.edu/catalog/24758.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang L. Gallium Nitride-based Electronic and Optoelectronic devices. [Thesis]. Penn State University; 2015. Available from: https://submit-etda.libraries.psu.edu/catalog/24758

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Delft University of Technology

12. Li, Ruyu (author). A MHz Switching Active Clamp Flyback Converter as a Power Factor Correction Stage for Lighting.

Degree: 2017, Delft University of Technology

 A driver with high power factor, high efficiency and safety isolation are more attractive in the lighting application. Flyback is an ideal choice to be… (more)

Subjects/Keywords: Active Clamp Flyback; Gallium nitride device; ZVS; High Switching Frequency; Power Factor Correction; Lighting

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APA (6th Edition):

Li, R. (. (2017). A MHz Switching Active Clamp Flyback Converter as a Power Factor Correction Stage for Lighting. (Masters Thesis). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:09f706f9-decc-4509-8fba-a9521e437401

Chicago Manual of Style (16th Edition):

Li, Ruyu (author). “A MHz Switching Active Clamp Flyback Converter as a Power Factor Correction Stage for Lighting.” 2017. Masters Thesis, Delft University of Technology. Accessed January 23, 2021. http://resolver.tudelft.nl/uuid:09f706f9-decc-4509-8fba-a9521e437401.

MLA Handbook (7th Edition):

Li, Ruyu (author). “A MHz Switching Active Clamp Flyback Converter as a Power Factor Correction Stage for Lighting.” 2017. Web. 23 Jan 2021.

Vancouver:

Li R(. A MHz Switching Active Clamp Flyback Converter as a Power Factor Correction Stage for Lighting. [Internet] [Masters thesis]. Delft University of Technology; 2017. [cited 2021 Jan 23]. Available from: http://resolver.tudelft.nl/uuid:09f706f9-decc-4509-8fba-a9521e437401.

Council of Science Editors:

Li R(. A MHz Switching Active Clamp Flyback Converter as a Power Factor Correction Stage for Lighting. [Masters Thesis]. Delft University of Technology; 2017. Available from: http://resolver.tudelft.nl/uuid:09f706f9-decc-4509-8fba-a9521e437401


University of Illinois – Urbana-Champaign

13. Zhang, Dabin. Characterization of GaN MOS-HEMT trap-related effects for power switching applications.

Degree: MS, Electrical & Computer Engr, 2015, University of Illinois – Urbana-Champaign

 This thesis presents the experiment setup and result of AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors (MOS-HEMTs) characterization. Various aspects of GaN MOS-HEMTs, such as the DC characteristic,… (more)

Subjects/Keywords: Gallium nitride (GaN); Metal-Oxide-Semiconductor (MOS); High-Electron-Mobility Transistor (HEMT); Reliability

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APA (6th Edition):

Zhang, D. (2015). Characterization of GaN MOS-HEMT trap-related effects for power switching applications. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/78692

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhang, Dabin. “Characterization of GaN MOS-HEMT trap-related effects for power switching applications.” 2015. Thesis, University of Illinois – Urbana-Champaign. Accessed January 23, 2021. http://hdl.handle.net/2142/78692.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhang, Dabin. “Characterization of GaN MOS-HEMT trap-related effects for power switching applications.” 2015. Web. 23 Jan 2021.

Vancouver:

Zhang D. Characterization of GaN MOS-HEMT trap-related effects for power switching applications. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2015. [cited 2021 Jan 23]. Available from: http://hdl.handle.net/2142/78692.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang D. Characterization of GaN MOS-HEMT trap-related effects for power switching applications. [Thesis]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/78692

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

14. Chandrasekar, Hareesh. Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives.

Degree: PhD, Faculty Of Engineering, 2017, Indian Institute of Science

 Group III-A nitrides (GaN, AlN, InN and alloys) are materials of considerable contemporary interest and currently enable a wide variety of optoelectronic and high-power, high-frequency… (more)

Subjects/Keywords: Group III-A Nitrides; High Electron Mobility Transistor; Nitride Semiconductors; Aluminium Nitride-Silicon Interface; Gallium Nitride Films; Aluminium Nitride Thin Films; Nitride Films; Nitride Epitaxy; Nitride Hetero-Interfaces; Aluminium Nitride (AlN) Epitaxial Layers; GaN Films; AlN/Si Hetero-interface; AlN-Si Interface; Materials Science

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chandrasekar, H. (2017). Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/2740

Chicago Manual of Style (16th Edition):

Chandrasekar, Hareesh. “Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives.” 2017. Doctoral Dissertation, Indian Institute of Science. Accessed January 23, 2021. http://etd.iisc.ac.in/handle/2005/2740.

MLA Handbook (7th Edition):

Chandrasekar, Hareesh. “Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives.” 2017. Web. 23 Jan 2021.

Vancouver:

Chandrasekar H. Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2017. [cited 2021 Jan 23]. Available from: http://etd.iisc.ac.in/handle/2005/2740.

Council of Science Editors:

Chandrasekar H. Dissimilar Hetero-Interfaces with Group III-A Nitrides : Material And Device Perspectives. [Doctoral Dissertation]. Indian Institute of Science; 2017. Available from: http://etd.iisc.ac.in/handle/2005/2740

15. Hautakangas, Sami. Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride.

Degree: 2005, Helsinki University of Technology

The effects of impurity atoms as well as various growth methods to the formation of vacancy type defects in gallium nitride (GaN) have been studied… (more)

Subjects/Keywords: gallium nitride; positron annihilation; vacancy

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APA (6th Edition):

Hautakangas, S. (2005). Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2005/isbn9512276674/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hautakangas, Sami. “Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride.” 2005. Thesis, Helsinki University of Technology. Accessed January 23, 2021. http://lib.tkk.fi/Diss/2005/isbn9512276674/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hautakangas, Sami. “Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride.” 2005. Web. 23 Jan 2021.

Vancouver:

Hautakangas S. Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride. [Internet] [Thesis]. Helsinki University of Technology; 2005. [cited 2021 Jan 23]. Available from: http://lib.tkk.fi/Diss/2005/isbn9512276674/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hautakangas S. Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride. [Thesis]. Helsinki University of Technology; 2005. Available from: http://lib.tkk.fi/Diss/2005/isbn9512276674/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Cornell University

16. Brown, Richard. Advanced Dielectrics For Gallium Nitride Power Electronics.

Degree: PhD, Electrical Engineering, 2011, Cornell University

 This dissertation details the synthesis, characterization, and application of low-pressure chemical vapor deposited (LPCVD) Aluminum Silicon Nitride (Al x Siy Nz ) dielectrics to AlGaN/GaN… (more)

Subjects/Keywords: Gallium Nitride; hemt; Dielectric

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APA (6th Edition):

Brown, R. (2011). Advanced Dielectrics For Gallium Nitride Power Electronics. (Doctoral Dissertation). Cornell University. Retrieved from http://hdl.handle.net/1813/33475

Chicago Manual of Style (16th Edition):

Brown, Richard. “Advanced Dielectrics For Gallium Nitride Power Electronics.” 2011. Doctoral Dissertation, Cornell University. Accessed January 23, 2021. http://hdl.handle.net/1813/33475.

MLA Handbook (7th Edition):

Brown, Richard. “Advanced Dielectrics For Gallium Nitride Power Electronics.” 2011. Web. 23 Jan 2021.

Vancouver:

Brown R. Advanced Dielectrics For Gallium Nitride Power Electronics. [Internet] [Doctoral dissertation]. Cornell University; 2011. [cited 2021 Jan 23]. Available from: http://hdl.handle.net/1813/33475.

Council of Science Editors:

Brown R. Advanced Dielectrics For Gallium Nitride Power Electronics. [Doctoral Dissertation]. Cornell University; 2011. Available from: http://hdl.handle.net/1813/33475

17. Malkowski, Thomas. High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer.

Degree: 2016, University of California – eScholarship, University of California

Gallium nitride (GaN) has become an important semiconductor for the optoelectronics and power electronics fields in the pursuit of high efficiency devices. However, the lack… (more)

Subjects/Keywords: Materials Science; ammonothermal; gallium nitride

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APA (6th Edition):

Malkowski, T. (2016). High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/1tf7z2bm

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Malkowski, Thomas. “High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer.” 2016. Thesis, University of California – eScholarship, University of California. Accessed January 23, 2021. http://www.escholarship.org/uc/item/1tf7z2bm.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Malkowski, Thomas. “High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer.” 2016. Web. 23 Jan 2021.

Vancouver:

Malkowski T. High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer. [Internet] [Thesis]. University of California – eScholarship, University of California; 2016. [cited 2021 Jan 23]. Available from: http://www.escholarship.org/uc/item/1tf7z2bm.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Malkowski T. High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer. [Thesis]. University of California – eScholarship, University of California; 2016. Available from: http://www.escholarship.org/uc/item/1tf7z2bm

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Chicago

18. Sarkar, Ketaki. Study of Wide-Band Gap Oxide and Nitride-Based Semiconductors: Characterization and Device Physics.

Degree: 2018, University of Illinois – Chicago

 The increasing need for short wavelength material alongside high-power and high-frequency devices have encouraged a strong wave of research amongst the scientific community. While the… (more)

Subjects/Keywords: Zinc Oxide; Gallium Nitride

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APA (6th Edition):

Sarkar, K. (2018). Study of Wide-Band Gap Oxide and Nitride-Based Semiconductors: Characterization and Device Physics. (Thesis). University of Illinois – Chicago. Retrieved from http://hdl.handle.net/10027/22600

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sarkar, Ketaki. “Study of Wide-Band Gap Oxide and Nitride-Based Semiconductors: Characterization and Device Physics.” 2018. Thesis, University of Illinois – Chicago. Accessed January 23, 2021. http://hdl.handle.net/10027/22600.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sarkar, Ketaki. “Study of Wide-Band Gap Oxide and Nitride-Based Semiconductors: Characterization and Device Physics.” 2018. Web. 23 Jan 2021.

Vancouver:

Sarkar K. Study of Wide-Band Gap Oxide and Nitride-Based Semiconductors: Characterization and Device Physics. [Internet] [Thesis]. University of Illinois – Chicago; 2018. [cited 2021 Jan 23]. Available from: http://hdl.handle.net/10027/22600.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sarkar K. Study of Wide-Band Gap Oxide and Nitride-Based Semiconductors: Characterization and Device Physics. [Thesis]. University of Illinois – Chicago; 2018. Available from: http://hdl.handle.net/10027/22600

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

19. WANG YUN-HSIANG. DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY.

Degree: 2016, National University of Singapore

Subjects/Keywords: Gallium Nitride; HEMT; normally-off; temperature stability; power electroncis

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APA (6th Edition):

YUN-HSIANG, W. (2016). DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/129155

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

YUN-HSIANG, WANG. “DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY.” 2016. Thesis, National University of Singapore. Accessed January 23, 2021. http://scholarbank.nus.edu.sg/handle/10635/129155.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

YUN-HSIANG, WANG. “DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY.” 2016. Web. 23 Jan 2021.

Vancouver:

YUN-HSIANG W. DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY. [Internet] [Thesis]. National University of Singapore; 2016. [cited 2021 Jan 23]. Available from: http://scholarbank.nus.edu.sg/handle/10635/129155.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

YUN-HSIANG W. DESIGN, SIMULATION AND FABRICATION OF ALGAN/GAN NORMALLY-OFF HIGH ELECTRON MOBILITY TRANSISTORS WITH INVESTIGATION ON TEMPERATURE STABILITY. [Thesis]. National University of Singapore; 2016. Available from: http://scholarbank.nus.edu.sg/handle/10635/129155

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Utah

20. Yao, Xian. High-pressure, high-temperature sintering of polycrystalline cubic boron nitride with improved thermostability and mechanical properties for high temperature applications.

Degree: PhD, Metallurgical Engineering, 2014, University of Utah

 Polycrystalline cubic boron nitride (PCBN) is one of the few materials suitable for friction stir welding (FSW) of hardened steels, which demands tool materials to… (more)

Subjects/Keywords: Aluminum titanium; High pressure; High temperature sintering; High temperature stability; Polycrystalline cubic boron nitride; Reactive sintering; Thermal stability

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APA (6th Edition):

Yao, X. (2014). High-pressure, high-temperature sintering of polycrystalline cubic boron nitride with improved thermostability and mechanical properties for high temperature applications. (Doctoral Dissertation). University of Utah. Retrieved from http://content.lib.utah.edu/cdm/singleitem/collection/etd3/id/3242/rec/1230

Chicago Manual of Style (16th Edition):

Yao, Xian. “High-pressure, high-temperature sintering of polycrystalline cubic boron nitride with improved thermostability and mechanical properties for high temperature applications.” 2014. Doctoral Dissertation, University of Utah. Accessed January 23, 2021. http://content.lib.utah.edu/cdm/singleitem/collection/etd3/id/3242/rec/1230.

MLA Handbook (7th Edition):

Yao, Xian. “High-pressure, high-temperature sintering of polycrystalline cubic boron nitride with improved thermostability and mechanical properties for high temperature applications.” 2014. Web. 23 Jan 2021.

Vancouver:

Yao X. High-pressure, high-temperature sintering of polycrystalline cubic boron nitride with improved thermostability and mechanical properties for high temperature applications. [Internet] [Doctoral dissertation]. University of Utah; 2014. [cited 2021 Jan 23]. Available from: http://content.lib.utah.edu/cdm/singleitem/collection/etd3/id/3242/rec/1230.

Council of Science Editors:

Yao X. High-pressure, high-temperature sintering of polycrystalline cubic boron nitride with improved thermostability and mechanical properties for high temperature applications. [Doctoral Dissertation]. University of Utah; 2014. Available from: http://content.lib.utah.edu/cdm/singleitem/collection/etd3/id/3242/rec/1230


University of Michigan

21. Shao, Lei. Active Acoustic Emission From a Two-dimensional Electron Gas.

Degree: PhD, Mechanical Engineering, 2014, University of Michigan

 This work examines the performance and fundamental operating principles of an active acoustic emitter based on an AlGaN/GaN high electron mobility transistor (HEMT). Strong piezoelectric… (more)

Subjects/Keywords: Surface Acoustic Wave; Two-dimensional Electron Gas; Gallium Nitride; High Electron Mobility Transistor; Piezoelectricity; Acoustoelectricity; Electrical Engineering; Mechanical Engineering; Engineering

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APA (6th Edition):

Shao, L. (2014). Active Acoustic Emission From a Two-dimensional Electron Gas. (Doctoral Dissertation). University of Michigan. Retrieved from http://hdl.handle.net/2027.42/109039

Chicago Manual of Style (16th Edition):

Shao, Lei. “Active Acoustic Emission From a Two-dimensional Electron Gas.” 2014. Doctoral Dissertation, University of Michigan. Accessed January 23, 2021. http://hdl.handle.net/2027.42/109039.

MLA Handbook (7th Edition):

Shao, Lei. “Active Acoustic Emission From a Two-dimensional Electron Gas.” 2014. Web. 23 Jan 2021.

Vancouver:

Shao L. Active Acoustic Emission From a Two-dimensional Electron Gas. [Internet] [Doctoral dissertation]. University of Michigan; 2014. [cited 2021 Jan 23]. Available from: http://hdl.handle.net/2027.42/109039.

Council of Science Editors:

Shao L. Active Acoustic Emission From a Two-dimensional Electron Gas. [Doctoral Dissertation]. University of Michigan; 2014. Available from: http://hdl.handle.net/2027.42/109039


University of Illinois – Urbana-Champaign

22. Macy, Benjamin Blake. Analysis and design of high power density resonant switched-capacitor converters.

Degree: MS, Electrical & Computer Engr, 2015, University of Illinois – Urbana-Champaign

 This thesis is motivated by the desire for power electronics designers to create power electronic converters that have high energy density (are very small) and… (more)

Subjects/Keywords: Swtiched; Capacitor; Power Electronics; Power Density; High Efficiency; Dickson; Capacitor; Resonant; Split-Phase; Soft-charging; Soft-switching; Gallium Nitride (GaN)

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APA (6th Edition):

Macy, B. B. (2015). Analysis and design of high power density resonant switched-capacitor converters. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/78454

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Macy, Benjamin Blake. “Analysis and design of high power density resonant switched-capacitor converters.” 2015. Thesis, University of Illinois – Urbana-Champaign. Accessed January 23, 2021. http://hdl.handle.net/2142/78454.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Macy, Benjamin Blake. “Analysis and design of high power density resonant switched-capacitor converters.” 2015. Web. 23 Jan 2021.

Vancouver:

Macy BB. Analysis and design of high power density resonant switched-capacitor converters. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2015. [cited 2021 Jan 23]. Available from: http://hdl.handle.net/2142/78454.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Macy BB. Analysis and design of high power density resonant switched-capacitor converters. [Thesis]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/78454

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Virginia Tech

23. Fei, Chao. Optimization of LLC Resonant Converters: State-trajectory Control and PCB based Magnetics.

Degree: PhD, Electrical Engineering, 2018, Virginia Tech

 With the fast development of information technology (IT) industry, the demand and market volume for off-line power supplies keeps increasing, especially those for desktop, flat-panel… (more)

Subjects/Keywords: DC/DC converter; LLC converter; high-frequency; digital control; transformer design; magnetic integration; EMI; gallium nitride

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APA (6th Edition):

Fei, C. (2018). Optimization of LLC Resonant Converters: State-trajectory Control and PCB based Magnetics. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/83206

Chicago Manual of Style (16th Edition):

Fei, Chao. “Optimization of LLC Resonant Converters: State-trajectory Control and PCB based Magnetics.” 2018. Doctoral Dissertation, Virginia Tech. Accessed January 23, 2021. http://hdl.handle.net/10919/83206.

MLA Handbook (7th Edition):

Fei, Chao. “Optimization of LLC Resonant Converters: State-trajectory Control and PCB based Magnetics.” 2018. Web. 23 Jan 2021.

Vancouver:

Fei C. Optimization of LLC Resonant Converters: State-trajectory Control and PCB based Magnetics. [Internet] [Doctoral dissertation]. Virginia Tech; 2018. [cited 2021 Jan 23]. Available from: http://hdl.handle.net/10919/83206.

Council of Science Editors:

Fei C. Optimization of LLC Resonant Converters: State-trajectory Control and PCB based Magnetics. [Doctoral Dissertation]. Virginia Tech; 2018. Available from: http://hdl.handle.net/10919/83206


Virginia Tech

24. Zhang, Zhemin. High-frequency Quasi-square-wave Flyback Regulator.

Degree: PhD, Electrical and Computer Engineering, 2016, Virginia Tech

 Motivated by the recent commercialization of gallium-nitride (GaN) switches, an effort was initiated to determine whether it was feasible to switch the flyback converter at… (more)

Subjects/Keywords: Dead-time control.; Small-signal model; planar coupled inductors; high ac flux; gallium nitride; quasi-square-wave converter; Flyback converter

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APA (6th Edition):

Zhang, Z. (2016). High-frequency Quasi-square-wave Flyback Regulator. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/77434

Chicago Manual of Style (16th Edition):

Zhang, Zhemin. “High-frequency Quasi-square-wave Flyback Regulator.” 2016. Doctoral Dissertation, Virginia Tech. Accessed January 23, 2021. http://hdl.handle.net/10919/77434.

MLA Handbook (7th Edition):

Zhang, Zhemin. “High-frequency Quasi-square-wave Flyback Regulator.” 2016. Web. 23 Jan 2021.

Vancouver:

Zhang Z. High-frequency Quasi-square-wave Flyback Regulator. [Internet] [Doctoral dissertation]. Virginia Tech; 2016. [cited 2021 Jan 23]. Available from: http://hdl.handle.net/10919/77434.

Council of Science Editors:

Zhang Z. High-frequency Quasi-square-wave Flyback Regulator. [Doctoral Dissertation]. Virginia Tech; 2016. Available from: http://hdl.handle.net/10919/77434


Virginia Tech

25. Xue, Lingxiao. GaN-Based High-Efficiency, High-Density, High-Frequency Battery Charger for Plug-in Hybrid Electric Vehicle.

Degree: PhD, Electrical Engineering, 2015, Virginia Tech

 This work explores how GaN devices and advanced control can improve the power density of battery chargers for the plug-in hybrid electric vehicle. Gallium nitride(more)

Subjects/Keywords: High power density; PHEV; charger; DC link reduction; single phase; gallium nitride; totem-pole bridgeless; dual active bridge

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APA (6th Edition):

Xue, L. (2015). GaN-Based High-Efficiency, High-Density, High-Frequency Battery Charger for Plug-in Hybrid Electric Vehicle. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/73777

Chicago Manual of Style (16th Edition):

Xue, Lingxiao. “GaN-Based High-Efficiency, High-Density, High-Frequency Battery Charger for Plug-in Hybrid Electric Vehicle.” 2015. Doctoral Dissertation, Virginia Tech. Accessed January 23, 2021. http://hdl.handle.net/10919/73777.

MLA Handbook (7th Edition):

Xue, Lingxiao. “GaN-Based High-Efficiency, High-Density, High-Frequency Battery Charger for Plug-in Hybrid Electric Vehicle.” 2015. Web. 23 Jan 2021.

Vancouver:

Xue L. GaN-Based High-Efficiency, High-Density, High-Frequency Battery Charger for Plug-in Hybrid Electric Vehicle. [Internet] [Doctoral dissertation]. Virginia Tech; 2015. [cited 2021 Jan 23]. Available from: http://hdl.handle.net/10919/73777.

Council of Science Editors:

Xue L. GaN-Based High-Efficiency, High-Density, High-Frequency Battery Charger for Plug-in Hybrid Electric Vehicle. [Doctoral Dissertation]. Virginia Tech; 2015. Available from: http://hdl.handle.net/10919/73777


KTH

26. Liang, Xiaomin. Characterization of GaNbased HEMTs for power electronics.

Degree: Electrical Engineering and Computer Science (EECS), 2020, KTH

Gallium nitride (GaN) based high electron mobility transistors (HEMTs) are promising for power electronic applications due to their high breakdown voltage and power efficiency… (more)

Subjects/Keywords: Gallium nitride; high electron mobility transistor; gate designs; power electronics; Other Computer and Information Science; Annan data- och informationsvetenskap

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APA (6th Edition):

Liang, X. (2020). Characterization of GaNbased HEMTs for power electronics. (Thesis). KTH. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-284144

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liang, Xiaomin. “Characterization of GaNbased HEMTs for power electronics.” 2020. Thesis, KTH. Accessed January 23, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-284144.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liang, Xiaomin. “Characterization of GaNbased HEMTs for power electronics.” 2020. Web. 23 Jan 2021.

Vancouver:

Liang X. Characterization of GaNbased HEMTs for power electronics. [Internet] [Thesis]. KTH; 2020. [cited 2021 Jan 23]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-284144.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liang X. Characterization of GaNbased HEMTs for power electronics. [Thesis]. KTH; 2020. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-284144

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

27. Coudurier, Nicolas. Contribution à l'épitaxie des nitrures d'aluminium et de bore par dépôt chimique en phase vapeur à haute température : Contribution to the epitaxial growth of aluminum and boron nitrides by chemical vapor deposition at high temperature.

Degree: Docteur es, Matériaux, mécanique, génie civil, électrochimie, 2014, Université de Grenoble

Cette thèse se place dans le contexte des recherches menées sur l'élaboration de support de haute qualité cristalline pour des applications optoélectronique et piézoélectrique. Les… (more)

Subjects/Keywords: Nitrure de bore; Nitrure d\'aluminium; CVD; Epitaxie; Haute température; HVPE; Boron nitride; Aluminium nitride; CVD; Epitaxy; High temperature; HVPE; 620

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APA (6th Edition):

Coudurier, N. (2014). Contribution à l'épitaxie des nitrures d'aluminium et de bore par dépôt chimique en phase vapeur à haute température : Contribution to the epitaxial growth of aluminum and boron nitrides by chemical vapor deposition at high temperature. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2014GRENI009

Chicago Manual of Style (16th Edition):

Coudurier, Nicolas. “Contribution à l'épitaxie des nitrures d'aluminium et de bore par dépôt chimique en phase vapeur à haute température : Contribution to the epitaxial growth of aluminum and boron nitrides by chemical vapor deposition at high temperature.” 2014. Doctoral Dissertation, Université de Grenoble. Accessed January 23, 2021. http://www.theses.fr/2014GRENI009.

MLA Handbook (7th Edition):

Coudurier, Nicolas. “Contribution à l'épitaxie des nitrures d'aluminium et de bore par dépôt chimique en phase vapeur à haute température : Contribution to the epitaxial growth of aluminum and boron nitrides by chemical vapor deposition at high temperature.” 2014. Web. 23 Jan 2021.

Vancouver:

Coudurier N. Contribution à l'épitaxie des nitrures d'aluminium et de bore par dépôt chimique en phase vapeur à haute température : Contribution to the epitaxial growth of aluminum and boron nitrides by chemical vapor deposition at high temperature. [Internet] [Doctoral dissertation]. Université de Grenoble; 2014. [cited 2021 Jan 23]. Available from: http://www.theses.fr/2014GRENI009.

Council of Science Editors:

Coudurier N. Contribution à l'épitaxie des nitrures d'aluminium et de bore par dépôt chimique en phase vapeur à haute température : Contribution to the epitaxial growth of aluminum and boron nitrides by chemical vapor deposition at high temperature. [Doctoral Dissertation]. Université de Grenoble; 2014. Available from: http://www.theses.fr/2014GRENI009


University of Oxford

28. Severs, John. Microstructural characterisation of novel nitride nanostructures using electron microscopy.

Degree: PhD, 2014, University of Oxford

 Novel semiconductor nanostructures possess a range of notable properties that have the potential to be harnessed in the next generation of optical devices. Electron microscopy… (more)

Subjects/Keywords: 621.3815; Microscopy; Materials Sciences; High resolution microscopy; Microscopy and microanalysis; Nanostructures; Semiconductors; Electron image analysis; Atomic scale structure and properties; Advanced materials; Optoelectronics; Nitride; Gallium Nitride; Indium Gallium Nitride; Focussed Ion Beam Microscopy; Transmission electron microscopy; Scanning transmission electron microscopy; LEDs; light emitting diodes; defects; dislocations

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Severs, J. (2014). Microstructural characterisation of novel nitride nanostructures using electron microscopy. (Doctoral Dissertation). University of Oxford. Retrieved from http://ora.ox.ac.uk/objects/uuid:6229b51e-70e7-4431-985e-6bcb63bd99d1 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.655064

Chicago Manual of Style (16th Edition):

Severs, John. “Microstructural characterisation of novel nitride nanostructures using electron microscopy.” 2014. Doctoral Dissertation, University of Oxford. Accessed January 23, 2021. http://ora.ox.ac.uk/objects/uuid:6229b51e-70e7-4431-985e-6bcb63bd99d1 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.655064.

MLA Handbook (7th Edition):

Severs, John. “Microstructural characterisation of novel nitride nanostructures using electron microscopy.” 2014. Web. 23 Jan 2021.

Vancouver:

Severs J. Microstructural characterisation of novel nitride nanostructures using electron microscopy. [Internet] [Doctoral dissertation]. University of Oxford; 2014. [cited 2021 Jan 23]. Available from: http://ora.ox.ac.uk/objects/uuid:6229b51e-70e7-4431-985e-6bcb63bd99d1 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.655064.

Council of Science Editors:

Severs J. Microstructural characterisation of novel nitride nanostructures using electron microscopy. [Doctoral Dissertation]. University of Oxford; 2014. Available from: http://ora.ox.ac.uk/objects/uuid:6229b51e-70e7-4431-985e-6bcb63bd99d1 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.655064

29. Rennesson, Stéphanie. Développement de nouvelles hétérostructures HEMTs à base de nitrure de gallium pour des applications de puissance en gamme d'ondes millimétriques : Development of new gallium nitride based HEMT heterostructures for microwave power applications.

Degree: Docteur es, Physique, 2013, Nice

Les matériaux III-N sont présents dans la vie quotidienne pour des applications optoélectroniques (diodes électroluminescentes, lasers). Les propriétés remarquables du GaN (grand gap, grand champ… (more)

Subjects/Keywords: Transistor à haute mobilité électronique; Nitrure de gallium; III-N; Épitaxie; Transistor de puissance; RF; Ondes millimétriques; High electron mobility transistor; Gallium nitride; III-N; Epitaxy; Power transistor; RF; Microwaves

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rennesson, S. (2013). Développement de nouvelles hétérostructures HEMTs à base de nitrure de gallium pour des applications de puissance en gamme d'ondes millimétriques : Development of new gallium nitride based HEMT heterostructures for microwave power applications. (Doctoral Dissertation). Nice. Retrieved from http://www.theses.fr/2013NICE4106

Chicago Manual of Style (16th Edition):

Rennesson, Stéphanie. “Développement de nouvelles hétérostructures HEMTs à base de nitrure de gallium pour des applications de puissance en gamme d'ondes millimétriques : Development of new gallium nitride based HEMT heterostructures for microwave power applications.” 2013. Doctoral Dissertation, Nice. Accessed January 23, 2021. http://www.theses.fr/2013NICE4106.

MLA Handbook (7th Edition):

Rennesson, Stéphanie. “Développement de nouvelles hétérostructures HEMTs à base de nitrure de gallium pour des applications de puissance en gamme d'ondes millimétriques : Development of new gallium nitride based HEMT heterostructures for microwave power applications.” 2013. Web. 23 Jan 2021.

Vancouver:

Rennesson S. Développement de nouvelles hétérostructures HEMTs à base de nitrure de gallium pour des applications de puissance en gamme d'ondes millimétriques : Development of new gallium nitride based HEMT heterostructures for microwave power applications. [Internet] [Doctoral dissertation]. Nice; 2013. [cited 2021 Jan 23]. Available from: http://www.theses.fr/2013NICE4106.

Council of Science Editors:

Rennesson S. Développement de nouvelles hétérostructures HEMTs à base de nitrure de gallium pour des applications de puissance en gamme d'ondes millimétriques : Development of new gallium nitride based HEMT heterostructures for microwave power applications. [Doctoral Dissertation]. Nice; 2013. Available from: http://www.theses.fr/2013NICE4106

30. Saugnon, Damien. Contribution aux analyses de fiabilité des transistors HEMTs GaN : exploitation conjointe du modèle physique TCAD et des stress dynamiques HF pour l'analyse des mécanismes de dégradation : Contribution to GaN HEMTs transistors reliability analyses by use of TCAD physical modeling and HF dynamic stresses.

Degree: Docteur es, Electromagnétisme et Systèmes Haute Fréquence, 2018, Université Toulouse III – Paul Sabatier

Dans la course aux développements des technologies, une révolution a été induite par l'apparition des technologies Nitrures depuis deux décennies. Ces technologies à grande bande… (more)

Subjects/Keywords: Nitrure de gallium; HEMTs; Amplificateurs hybrides; Amplificateurs MMIC; Fiabilité; Stress à haute fréquence; Gallium nitride; HEMTs; Hybrid amplifiers; MMIC amplifiers; Reliability; High frequency stress

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Saugnon, D. (2018). Contribution aux analyses de fiabilité des transistors HEMTs GaN : exploitation conjointe du modèle physique TCAD et des stress dynamiques HF pour l'analyse des mécanismes de dégradation : Contribution to GaN HEMTs transistors reliability analyses by use of TCAD physical modeling and HF dynamic stresses. (Doctoral Dissertation). Université Toulouse III – Paul Sabatier. Retrieved from http://www.theses.fr/2018TOU30164

Chicago Manual of Style (16th Edition):

Saugnon, Damien. “Contribution aux analyses de fiabilité des transistors HEMTs GaN : exploitation conjointe du modèle physique TCAD et des stress dynamiques HF pour l'analyse des mécanismes de dégradation : Contribution to GaN HEMTs transistors reliability analyses by use of TCAD physical modeling and HF dynamic stresses.” 2018. Doctoral Dissertation, Université Toulouse III – Paul Sabatier. Accessed January 23, 2021. http://www.theses.fr/2018TOU30164.

MLA Handbook (7th Edition):

Saugnon, Damien. “Contribution aux analyses de fiabilité des transistors HEMTs GaN : exploitation conjointe du modèle physique TCAD et des stress dynamiques HF pour l'analyse des mécanismes de dégradation : Contribution to GaN HEMTs transistors reliability analyses by use of TCAD physical modeling and HF dynamic stresses.” 2018. Web. 23 Jan 2021.

Vancouver:

Saugnon D. Contribution aux analyses de fiabilité des transistors HEMTs GaN : exploitation conjointe du modèle physique TCAD et des stress dynamiques HF pour l'analyse des mécanismes de dégradation : Contribution to GaN HEMTs transistors reliability analyses by use of TCAD physical modeling and HF dynamic stresses. [Internet] [Doctoral dissertation]. Université Toulouse III – Paul Sabatier; 2018. [cited 2021 Jan 23]. Available from: http://www.theses.fr/2018TOU30164.

Council of Science Editors:

Saugnon D. Contribution aux analyses de fiabilité des transistors HEMTs GaN : exploitation conjointe du modèle physique TCAD et des stress dynamiques HF pour l'analyse des mécanismes de dégradation : Contribution to GaN HEMTs transistors reliability analyses by use of TCAD physical modeling and HF dynamic stresses. [Doctoral Dissertation]. Université Toulouse III – Paul Sabatier; 2018. Available from: http://www.theses.fr/2018TOU30164

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