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You searched for subject:(HfO2). Showing records 1 – 30 of 46 total matches.

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University of Florida

1. Lomenzo, Patrick D. Ferroelectric and Antiferroelectric Properties of HfO2-Based Thin Films.

Degree: PhD, Electrical and Computer Engineering, 2016, University of Florida

Subjects/Keywords: ferroelectrics; hfo2

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APA (6th Edition):

Lomenzo, P. D. (2016). Ferroelectric and Antiferroelectric Properties of HfO2-Based Thin Films. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0049755

Chicago Manual of Style (16th Edition):

Lomenzo, Patrick D. “Ferroelectric and Antiferroelectric Properties of HfO2-Based Thin Films.” 2016. Doctoral Dissertation, University of Florida. Accessed July 19, 2019. http://ufdc.ufl.edu/UFE0049755.

MLA Handbook (7th Edition):

Lomenzo, Patrick D. “Ferroelectric and Antiferroelectric Properties of HfO2-Based Thin Films.” 2016. Web. 19 Jul 2019.

Vancouver:

Lomenzo PD. Ferroelectric and Antiferroelectric Properties of HfO2-Based Thin Films. [Internet] [Doctoral dissertation]. University of Florida; 2016. [cited 2019 Jul 19]. Available from: http://ufdc.ufl.edu/UFE0049755.

Council of Science Editors:

Lomenzo PD. Ferroelectric and Antiferroelectric Properties of HfO2-Based Thin Films. [Doctoral Dissertation]. University of Florida; 2016. Available from: http://ufdc.ufl.edu/UFE0049755


NSYSU

2. Su, Hsuan-Hsiang. Improvement on low-temperature deposited high-k materials by high-pressure treatment.

Degree: Master, Electro-Optical Engineering, 2008, NSYSU

 In this study, high-pressure oxygen (O2 and O3) technologies were employed originally to effectively improve the properties of low-temperature-deposited metal oxide dielectric films. In this… (more)

Subjects/Keywords: high-pressure; high-k; HfO2; ZrO2

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APA (6th Edition):

Su, H. (2008). Improvement on low-temperature deposited high-k materials by high-pressure treatment. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008108-032911

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Su, Hsuan-Hsiang. “Improvement on low-temperature deposited high-k materials by high-pressure treatment.” 2008. Thesis, NSYSU. Accessed July 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008108-032911.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Su, Hsuan-Hsiang. “Improvement on low-temperature deposited high-k materials by high-pressure treatment.” 2008. Web. 19 Jul 2019.

Vancouver:

Su H. Improvement on low-temperature deposited high-k materials by high-pressure treatment. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Jul 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008108-032911.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Su H. Improvement on low-temperature deposited high-k materials by high-pressure treatment. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008108-032911

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

3. Tu, Yi-Hsien. Impedance Analysis of TiO2/HfO2 Superlattices on c-Al2O3.

Degree: Master, Physics, 2016, NSYSU

 This thesis is mainly researching on the impedance measurement and analysis of TiO2/HfO2 superlattices on c-sapphire substrate, equivalent circuit were proposed and simulated to acquire… (more)

Subjects/Keywords: HfO2; TiO2; Impedance Analysis; Dielectric Constant; Superlattices

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APA (6th Edition):

Tu, Y. (2016). Impedance Analysis of TiO2/HfO2 Superlattices on c-Al2O3. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703116-162550

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tu, Yi-Hsien. “Impedance Analysis of TiO2/HfO2 Superlattices on c-Al2O3.” 2016. Thesis, NSYSU. Accessed July 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703116-162550.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tu, Yi-Hsien. “Impedance Analysis of TiO2/HfO2 Superlattices on c-Al2O3.” 2016. Web. 19 Jul 2019.

Vancouver:

Tu Y. Impedance Analysis of TiO2/HfO2 Superlattices on c-Al2O3. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Jul 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703116-162550.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tu Y. Impedance Analysis of TiO2/HfO2 Superlattices on c-Al2O3. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703116-162550

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

4. Zhou , Jing-Wei. Structures and dielectrics of sputtered epitaxial TiO2/HfO2 superlattices.

Degree: Master, Physics, 2015, NSYSU

 RF magnetron sputtering has been used to deposit thin films of TiO2/HfO2 superlattices in alternating sequence on c-oriented sapphire substrates using titanium, or titanium dioxide,… (more)

Subjects/Keywords: Dielectric Constant; XRD; TEM; HfO2; Superlattice; TiO2

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APA (6th Edition):

Zhou , J. (2015). Structures and dielectrics of sputtered epitaxial TiO2/HfO2 superlattices. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713115-100614

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhou , Jing-Wei. “Structures and dielectrics of sputtered epitaxial TiO2/HfO2 superlattices.” 2015. Thesis, NSYSU. Accessed July 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713115-100614.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhou , Jing-Wei. “Structures and dielectrics of sputtered epitaxial TiO2/HfO2 superlattices.” 2015. Web. 19 Jul 2019.

Vancouver:

Zhou J. Structures and dielectrics of sputtered epitaxial TiO2/HfO2 superlattices. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Jul 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713115-100614.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhou J. Structures and dielectrics of sputtered epitaxial TiO2/HfO2 superlattices. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713115-100614

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Cincinnati

5. Nguyen, Thinh H. Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM.

Degree: MS, Engineering and Applied Science: Electrical Engineering, 2018, University of Cincinnati

 The effect of Zr deposition as an interfacial layer between top electrode and oxide layer of HfO2-based Resistive Random-Access Memory (RRAM) was studied in the… (more)

Subjects/Keywords: Electrical Engineering; Semiconductor; Reflection; RRAM; HfO2

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APA (6th Edition):

Nguyen, T. H. (2018). Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1535702700125043

Chicago Manual of Style (16th Edition):

Nguyen, Thinh H. “Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM.” 2018. Masters Thesis, University of Cincinnati. Accessed July 19, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1535702700125043.

MLA Handbook (7th Edition):

Nguyen, Thinh H. “Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM.” 2018. Web. 19 Jul 2019.

Vancouver:

Nguyen TH. Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM. [Internet] [Masters thesis]. University of Cincinnati; 2018. [cited 2019 Jul 19]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1535702700125043.

Council of Science Editors:

Nguyen TH. Study of Reflection Coefficient in Different Resistive States of HfO2-based RRAM. [Masters Thesis]. University of Cincinnati; 2018. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1535702700125043


Vanderbilt University

6. Duan, Guoxing. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.

Degree: PhD, Electrical Engineering, 2016, Vanderbilt University

 The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases has been evaluated. Negative bias irradiation leads to the worst-case degradation.… (more)

Subjects/Keywords: HfO2; SiGe; low frequency noise; NBTI; TID

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APA (6th Edition):

Duan, G. (2016). Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;

Chicago Manual of Style (16th Edition):

Duan, Guoxing. “Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.” 2016. Doctoral Dissertation, Vanderbilt University. Accessed July 19, 2019. http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;.

MLA Handbook (7th Edition):

Duan, Guoxing. “Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.” 2016. Web. 19 Jul 2019.

Vancouver:

Duan G. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. [Internet] [Doctoral dissertation]. Vanderbilt University; 2016. [cited 2019 Jul 19]. Available from: http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;.

Council of Science Editors:

Duan G. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. [Doctoral Dissertation]. Vanderbilt University; 2016. Available from: http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;

7. Cabout, Thomas. Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications.

Degree: Docteur es, Micro et Nanoélectronique, 2014, Aix Marseille Université

Aujourd'hui, le marché des mémoires non-volatile est dominé par la technologie Flash. Cependant, cette technologie est en passe d'atteindre ses limites de miniaturisation. Ainsi, dans… (more)

Subjects/Keywords: Mémoire; Rram; OxRRAM; Commutation; Résistance; Oxyde; HfO2; Memory; Rram; OxRRAM; Commutation; Resistance; Oxide; HfO2

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APA (6th Edition):

Cabout, T. (2014). Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2014AIXM4778

Chicago Manual of Style (16th Edition):

Cabout, Thomas. “Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications.” 2014. Doctoral Dissertation, Aix Marseille Université. Accessed July 19, 2019. http://www.theses.fr/2014AIXM4778.

MLA Handbook (7th Edition):

Cabout, Thomas. “Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications.” 2014. Web. 19 Jul 2019.

Vancouver:

Cabout T. Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications. [Internet] [Doctoral dissertation]. Aix Marseille Université 2014. [cited 2019 Jul 19]. Available from: http://www.theses.fr/2014AIXM4778.

Council of Science Editors:

Cabout T. Optimisation technologique et caractérisation électrique de mémoires résistives OxRRAM pour applications basse consommation : Technological optimization and electrical characterization of oxide based resistive memories (OxRRAM) for low power applications. [Doctoral Dissertation]. Aix Marseille Université 2014. Available from: http://www.theses.fr/2014AIXM4778


Université de Grenoble

8. Calka, Pauline. Nanocaractérisation d'oxydes à changement de résistance pour les mémoires résistives : Nanocharacterization of resistance switching oxides for resistive memories.

Degree: Docteur es, Génie civil, 2012, Université de Grenoble

En raison de leur faible consommation d'énergie, les mémoires non volatiles (MNV) sont En raison de leur faible consommation d'énergie, les mémoires non-volatiles sont particulièrement… (more)

Subjects/Keywords: Mémoires résistives; HfO2; NiO; Spectroscopie de pertes d'énergie; Spectroscopie de photoélectrons; Resistive memories; HfO2; NiO; Electron energy loss spectroscopy; Photoelectron spectroscopy

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APA (6th Edition):

Calka, P. (2012). Nanocaractérisation d'oxydes à changement de résistance pour les mémoires résistives : Nanocharacterization of resistance switching oxides for resistive memories. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2012GRENI023

Chicago Manual of Style (16th Edition):

Calka, Pauline. “Nanocaractérisation d'oxydes à changement de résistance pour les mémoires résistives : Nanocharacterization of resistance switching oxides for resistive memories.” 2012. Doctoral Dissertation, Université de Grenoble. Accessed July 19, 2019. http://www.theses.fr/2012GRENI023.

MLA Handbook (7th Edition):

Calka, Pauline. “Nanocaractérisation d'oxydes à changement de résistance pour les mémoires résistives : Nanocharacterization of resistance switching oxides for resistive memories.” 2012. Web. 19 Jul 2019.

Vancouver:

Calka P. Nanocaractérisation d'oxydes à changement de résistance pour les mémoires résistives : Nanocharacterization of resistance switching oxides for resistive memories. [Internet] [Doctoral dissertation]. Université de Grenoble; 2012. [cited 2019 Jul 19]. Available from: http://www.theses.fr/2012GRENI023.

Council of Science Editors:

Calka P. Nanocaractérisation d'oxydes à changement de résistance pour les mémoires résistives : Nanocharacterization of resistance switching oxides for resistive memories. [Doctoral Dissertation]. Université de Grenoble; 2012. Available from: http://www.theses.fr/2012GRENI023


RMIT University

9. Field, M. The fabrication and characterisation of metal oxide thin films for microelectronic and optical applications.

Degree: 2011, RMIT University

 Metal oxide thin films are the subject of considerable research due to their novel optical and electrical properties which make them suitable for use in… (more)

Subjects/Keywords: Fields of Research; Metal Oxide; TEM; XANES; FEFF8; WO3; HfO2; AZO

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APA (6th Edition):

Field, M. (2011). The fabrication and characterisation of metal oxide thin films for microelectronic and optical applications. (Thesis). RMIT University. Retrieved from http://researchbank.rmit.edu.au/view/rmit:11439

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Field, M. “The fabrication and characterisation of metal oxide thin films for microelectronic and optical applications.” 2011. Thesis, RMIT University. Accessed July 19, 2019. http://researchbank.rmit.edu.au/view/rmit:11439.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Field, M. “The fabrication and characterisation of metal oxide thin films for microelectronic and optical applications.” 2011. Web. 19 Jul 2019.

Vancouver:

Field M. The fabrication and characterisation of metal oxide thin films for microelectronic and optical applications. [Internet] [Thesis]. RMIT University; 2011. [cited 2019 Jul 19]. Available from: http://researchbank.rmit.edu.au/view/rmit:11439.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Field M. The fabrication and characterisation of metal oxide thin films for microelectronic and optical applications. [Thesis]. RMIT University; 2011. Available from: http://researchbank.rmit.edu.au/view/rmit:11439

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

10. Peng, Han-Kuang. Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory.

Degree: Master, Mechanical and Electro-Mechanical Engineering, 2013, NSYSU

 In this thesis, silicon dioxide (SiO2) doped hafnium oxide (HfO2) is applied to form low-k doped high-k materials, and the multilayer structure is used to… (more)

Subjects/Keywords: RRAM; SiO2; High-K; HfO2; energy dissipation rate; Low-K; critical energy

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APA (6th Edition):

Peng, H. (2013). Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Peng, Han-Kuang. “Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory.” 2013. Thesis, NSYSU. Accessed July 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Peng, Han-Kuang. “Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory.” 2013. Web. 19 Jul 2019.

Vancouver:

Peng H. Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Jul 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Peng H. Study on characteristics of SiO2-doped HfO2 thin film resistance random access memory. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0631113-231027

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

11. Chen, Po-Hsun. Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device.

Degree: PhD, Physics, 2018, NSYSU

 With the advent of advanced technologies such as the Internet of Things (IoT), artificial intelligence (AI), and cloud computing, huge amounts of data are continuously… (more)

Subjects/Keywords: Resistance Switching (RS); Indium Tin Oxide (ITO); Resistive Random Access Memory (RRAM); Hafnium Dioxide (HfO2)

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, P. (2018). Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038

Chicago Manual of Style (16th Edition):

Chen, Po-Hsun. “Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device.” 2018. Doctoral Dissertation, NSYSU. Accessed July 19, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038.

MLA Handbook (7th Edition):

Chen, Po-Hsun. “Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device.” 2018. Web. 19 Jul 2019.

Vancouver:

Chen P. Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device. [Internet] [Doctoral dissertation]. NSYSU; 2018. [cited 2019 Jul 19]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038.

Council of Science Editors:

Chen P. Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device. [Doctoral Dissertation]. NSYSU; 2018. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038


Indian Institute of Science

12. Ganapathi, K Lakshmi. Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials.

Degree: 2014, Indian Institute of Science

 Recently, high-κ materials have become the focus of research and been extensively utilized as the gate dielectric layer in aggressive scaled complementary metal-oxide-semiconductor (CMOS) technology.… (more)

Subjects/Keywords: Hafnium Dioxide Thin Films; Complementary Metal-Oxide Semiconductors (CMOS); Two-Dimensional Layered Materials - Gate Dielectrics; High-K Materials; Gate Dielectric; High-K Gate Dielectric; Nanoelectronic Devices - Gate Dielectrics; HfO2 Gate Dielectrics; Dielectric Thin Films; HfO2 Back Gated Graphene Transistors; HfO2 Back Gated MoS2 Transistors; Dielectrics; Metal-Oxide Semiconductor Transistors; HfO2 Thin Films; 2-D lLyered Materials; Instrumentation and Applied Physics

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APA (6th Edition):

Ganapathi, K. L. (2014). Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/3219

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ganapathi, K Lakshmi. “Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials.” 2014. Thesis, Indian Institute of Science. Accessed July 19, 2019. http://hdl.handle.net/2005/3219.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ganapathi, K Lakshmi. “Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials.” 2014. Web. 19 Jul 2019.

Vancouver:

Ganapathi KL. Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials. [Internet] [Thesis]. Indian Institute of Science; 2014. [cited 2019 Jul 19]. Available from: http://hdl.handle.net/2005/3219.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ganapathi KL. Optimization of HfO2 Thin Films for Gate Dielectric Applications in 2-D Layered Materials. [Thesis]. Indian Institute of Science; 2014. Available from: http://hdl.handle.net/2005/3219

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Tennessee – Knoxville

13. Bales, Aaron Hamilton. Incorporation of High-k HfO2 Thin Films in a-IGZO Thin Film Transistor Devices.

Degree: MS, Materials Science and Engineering, 2015, University of Tennessee – Knoxville

  In this study, HfO2 [hafnium oxide] thin films are investigated extensively as part of indium gallium zinc oxide (IGZO) thin film transistor (TFT) devices.… (more)

Subjects/Keywords: TFT; HfO2; dielectric; IGZO; Passivation; Nanoscience and Nanotechnology; Semiconductor and Optical Materials

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APA (6th Edition):

Bales, A. H. (2015). Incorporation of High-k HfO2 Thin Films in a-IGZO Thin Film Transistor Devices. (Thesis). University of Tennessee – Knoxville. Retrieved from https://trace.tennessee.edu/utk_gradthes/3558

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bales, Aaron Hamilton. “Incorporation of High-k HfO2 Thin Films in a-IGZO Thin Film Transistor Devices.” 2015. Thesis, University of Tennessee – Knoxville. Accessed July 19, 2019. https://trace.tennessee.edu/utk_gradthes/3558.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bales, Aaron Hamilton. “Incorporation of High-k HfO2 Thin Films in a-IGZO Thin Film Transistor Devices.” 2015. Web. 19 Jul 2019.

Vancouver:

Bales AH. Incorporation of High-k HfO2 Thin Films in a-IGZO Thin Film Transistor Devices. [Internet] [Thesis]. University of Tennessee – Knoxville; 2015. [cited 2019 Jul 19]. Available from: https://trace.tennessee.edu/utk_gradthes/3558.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bales AH. Incorporation of High-k HfO2 Thin Films in a-IGZO Thin Film Transistor Devices. [Thesis]. University of Tennessee – Knoxville; 2015. Available from: https://trace.tennessee.edu/utk_gradthes/3558

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universitat Autònoma de Barcelona

14. Rodríguez Fernández, Alberto. Analysis and modeling of filamentary conduction in Hf02-based structures.

Degree: Departament d'Enginyeria Electrònica, 2018, Universitat Autònoma de Barcelona

 We are currently facing a revolution in the fields of microelectronics and information technologies that will surely affect our way of life in the years… (more)

Subjects/Keywords: HfO2; Commutació resistiva; Commutación resistiva; Resistive switching; Conducció filamentaria; Conducción filamentaria; Filamentary conduction; Tecnologies; 621.3

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APA (6th Edition):

Rodríguez Fernández, A. (2018). Analysis and modeling of filamentary conduction in Hf02-based structures. (Thesis). Universitat Autònoma de Barcelona. Retrieved from http://hdl.handle.net/10803/643307

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rodríguez Fernández, Alberto. “Analysis and modeling of filamentary conduction in Hf02-based structures.” 2018. Thesis, Universitat Autònoma de Barcelona. Accessed July 19, 2019. http://hdl.handle.net/10803/643307.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rodríguez Fernández, Alberto. “Analysis and modeling of filamentary conduction in Hf02-based structures.” 2018. Web. 19 Jul 2019.

Vancouver:

Rodríguez Fernández A. Analysis and modeling of filamentary conduction in Hf02-based structures. [Internet] [Thesis]. Universitat Autònoma de Barcelona; 2018. [cited 2019 Jul 19]. Available from: http://hdl.handle.net/10803/643307.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rodríguez Fernández A. Analysis and modeling of filamentary conduction in Hf02-based structures. [Thesis]. Universitat Autònoma de Barcelona; 2018. Available from: http://hdl.handle.net/10803/643307

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Texas – Austin

15. Lee, Tackhwi. Device characterization and reliability of Dysprosium (Dy) incorporated HfO₂ CMOS devices and its application to high-k NAND flash memory.

Degree: Electrical and Computer Engineering, 2010, University of Texas – Austin

 Dy-incorporated HfO₂ gate oxide with TaN gate electrode nMOS device has been developed for high performance CMOS applications in 22nm node technology. DyO /HfO bi-layer… (more)

Subjects/Keywords: Dy-incorporated HfO2; Device characterization; NAND flash memory; MOSFETs; High-k; High-kappa

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APA (6th Edition):

Lee, T. (2010). Device characterization and reliability of Dysprosium (Dy) incorporated HfO₂ CMOS devices and its application to high-k NAND flash memory. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/ETD-UT-2010-12-2397

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Tackhwi. “Device characterization and reliability of Dysprosium (Dy) incorporated HfO₂ CMOS devices and its application to high-k NAND flash memory.” 2010. Thesis, University of Texas – Austin. Accessed July 19, 2019. http://hdl.handle.net/2152/ETD-UT-2010-12-2397.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Tackhwi. “Device characterization and reliability of Dysprosium (Dy) incorporated HfO₂ CMOS devices and its application to high-k NAND flash memory.” 2010. Web. 19 Jul 2019.

Vancouver:

Lee T. Device characterization and reliability of Dysprosium (Dy) incorporated HfO₂ CMOS devices and its application to high-k NAND flash memory. [Internet] [Thesis]. University of Texas – Austin; 2010. [cited 2019 Jul 19]. Available from: http://hdl.handle.net/2152/ETD-UT-2010-12-2397.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee T. Device characterization and reliability of Dysprosium (Dy) incorporated HfO₂ CMOS devices and its application to high-k NAND flash memory. [Thesis]. University of Texas – Austin; 2010. Available from: http://hdl.handle.net/2152/ETD-UT-2010-12-2397

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

16. Iglesias Santiso, Vanessa. CAFM Nanoscale electrical properties and reliability of HfOz based gate dielectrics in electron devices : Impact of the polycrystallization and resistive switching.

Degree: Departament d'Enginyeria Electrònica, 2012, Universitat Autònoma de Barcelona

 The evolution of MOS devices has involved an important shrinking in the transistor size with the aim of improve their benefits. However, this continuous miniaturization… (more)

Subjects/Keywords: CAFM; Leakage current; Polycrystalline HfO2; Tecnologies; 62

…BD in polycristalline HfO2 gate dielectrics investigated by CAFM”, Journal of Vacuum… …Benstetter, Z. Y. Shen, and G. Bersuker “Degradation of polycrystalline HfO2-based gate dielectrics… …and Low conductivity states on TiN/HfO2/Pt structures” Microelectronics Reliability, vol. 52… …polycrystalline HfO2 films”, Microelectronic Engineering 88, 1272 (2011)  G. Bersuker, J… …A. Shluger, P. Kirsch, R. Jammy, “Grain boundarydriven leakage path formation in HfO2… 

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APA (6th Edition):

Iglesias Santiso, V. (2012). CAFM Nanoscale electrical properties and reliability of HfOz based gate dielectrics in electron devices : Impact of the polycrystallization and resistive switching. (Thesis). Universitat Autònoma de Barcelona. Retrieved from http://hdl.handle.net/10803/107890

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Iglesias Santiso, Vanessa. “CAFM Nanoscale electrical properties and reliability of HfOz based gate dielectrics in electron devices : Impact of the polycrystallization and resistive switching.” 2012. Thesis, Universitat Autònoma de Barcelona. Accessed July 19, 2019. http://hdl.handle.net/10803/107890.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Iglesias Santiso, Vanessa. “CAFM Nanoscale electrical properties and reliability of HfOz based gate dielectrics in electron devices : Impact of the polycrystallization and resistive switching.” 2012. Web. 19 Jul 2019.

Vancouver:

Iglesias Santiso V. CAFM Nanoscale electrical properties and reliability of HfOz based gate dielectrics in electron devices : Impact of the polycrystallization and resistive switching. [Internet] [Thesis]. Universitat Autònoma de Barcelona; 2012. [cited 2019 Jul 19]. Available from: http://hdl.handle.net/10803/107890.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Iglesias Santiso V. CAFM Nanoscale electrical properties and reliability of HfOz based gate dielectrics in electron devices : Impact of the polycrystallization and resistive switching. [Thesis]. Universitat Autònoma de Barcelona; 2012. Available from: http://hdl.handle.net/10803/107890

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Texas – Austin

17. -0323-9039. Metal-to-insulator transitions in transition metal oxides : a first principles study.

Degree: Physics, 2015, University of Texas – Austin

 Transition metal oxides have received significant attention in recent decades due to their ability to display a wide range of novel functional properties. In particular,… (more)

Subjects/Keywords: Metal-to-insulator transition; Transition metal oxides; NbO2; HfO2; SrTiO3; First principles; Density functional theory; Electronic structure; Phase transitions

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APA (6th Edition):

-0323-9039. (2015). Metal-to-insulator transitions in transition metal oxides : a first principles study. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/44595

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

-0323-9039. “Metal-to-insulator transitions in transition metal oxides : a first principles study.” 2015. Thesis, University of Texas – Austin. Accessed July 19, 2019. http://hdl.handle.net/2152/44595.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

-0323-9039. “Metal-to-insulator transitions in transition metal oxides : a first principles study.” 2015. Web. 19 Jul 2019.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-0323-9039. Metal-to-insulator transitions in transition metal oxides : a first principles study. [Internet] [Thesis]. University of Texas – Austin; 2015. [cited 2019 Jul 19]. Available from: http://hdl.handle.net/2152/44595.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

-0323-9039. Metal-to-insulator transitions in transition metal oxides : a first principles study. [Thesis]. University of Texas – Austin; 2015. Available from: http://hdl.handle.net/2152/44595

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation


University of Texas – Austin

18. Wang, Tuo, 1983-. Atomic layer deposition of amorphous hafnium-based thin films with enhance thermal stabilities.

Degree: Chemical Engineering, 2010, University of Texas – Austin

 The continuous scaling of microelectronic devices requires high permittivity (high-k) dielectrics to replace SiO₂ as the gate material. HfO₂ is one of the most promising… (more)

Subjects/Keywords: Atomic layer deposition; hafnium oxide; HfO2; Dielectric thin film; High permittivity materials; Thin films; Thermal stability; Oxides

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APA (6th Edition):

Wang, Tuo, 1. (2010). Atomic layer deposition of amorphous hafnium-based thin films with enhance thermal stabilities. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/ETD-UT-2010-12-2059

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Tuo, 1983-. “Atomic layer deposition of amorphous hafnium-based thin films with enhance thermal stabilities.” 2010. Thesis, University of Texas – Austin. Accessed July 19, 2019. http://hdl.handle.net/2152/ETD-UT-2010-12-2059.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Tuo, 1983-. “Atomic layer deposition of amorphous hafnium-based thin films with enhance thermal stabilities.” 2010. Web. 19 Jul 2019.

Vancouver:

Wang, Tuo 1. Atomic layer deposition of amorphous hafnium-based thin films with enhance thermal stabilities. [Internet] [Thesis]. University of Texas – Austin; 2010. [cited 2019 Jul 19]. Available from: http://hdl.handle.net/2152/ETD-UT-2010-12-2059.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang, Tuo 1. Atomic layer deposition of amorphous hafnium-based thin films with enhance thermal stabilities. [Thesis]. University of Texas – Austin; 2010. Available from: http://hdl.handle.net/2152/ETD-UT-2010-12-2059

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

19. TAN KIAN MING. Study on etching and characterization of advanced gate stack.

Degree: 2004, National University of Singapore

Subjects/Keywords: Etching; Poly SiGe; HfO2; Trimming; Notch Gate

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APA (6th Edition):

MING, T. K. (2004). Study on etching and characterization of advanced gate stack. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/27680

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

MING, TAN KIAN. “Study on etching and characterization of advanced gate stack.” 2004. Thesis, National University of Singapore. Accessed July 19, 2019. http://scholarbank.nus.edu.sg/handle/10635/27680.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

MING, TAN KIAN. “Study on etching and characterization of advanced gate stack.” 2004. Web. 19 Jul 2019.

Vancouver:

MING TK. Study on etching and characterization of advanced gate stack. [Internet] [Thesis]. National University of Singapore; 2004. [cited 2019 Jul 19]. Available from: http://scholarbank.nus.edu.sg/handle/10635/27680.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

MING TK. Study on etching and characterization of advanced gate stack. [Thesis]. National University of Singapore; 2004. Available from: http://scholarbank.nus.edu.sg/handle/10635/27680

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

20. Kim, Indong. Device Fabrication and Characterization for Alternative Gate Stack Devices.

Degree: PhD, Electrical Engineering, 2003, North Carolina State University

 Aggressive scaling has continued to improve MOSFET transistor performance. An effective oxide thickness (EOT) less than 1.0nm is required for future technology nodes. However, tunneling… (more)

Subjects/Keywords: MOSFET; Scaling; High-K; Metal Gate; Silicate; HfO2

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APA (6th Edition):

Kim, I. (2003). Device Fabrication and Characterization for Alternative Gate Stack Devices. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5860

Chicago Manual of Style (16th Edition):

Kim, Indong. “Device Fabrication and Characterization for Alternative Gate Stack Devices.” 2003. Doctoral Dissertation, North Carolina State University. Accessed July 19, 2019. http://www.lib.ncsu.edu/resolver/1840.16/5860.

MLA Handbook (7th Edition):

Kim, Indong. “Device Fabrication and Characterization for Alternative Gate Stack Devices.” 2003. Web. 19 Jul 2019.

Vancouver:

Kim I. Device Fabrication and Characterization for Alternative Gate Stack Devices. [Internet] [Doctoral dissertation]. North Carolina State University; 2003. [cited 2019 Jul 19]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5860.

Council of Science Editors:

Kim I. Device Fabrication and Characterization for Alternative Gate Stack Devices. [Doctoral Dissertation]. North Carolina State University; 2003. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5860

21. Yuan, Ke. Electrochemical Investigations of Redox Reactions of Uranyl(VI) on Magnetite and Computational Modeling of the UO2-HfO2 Solid Solution.

Degree: PhD, Earth and Environmental Sciences, 2015, University of Michigan

 Uranium has a unique chemical behavior because of the presence of localized 5f electrons. The redox chemistry of uranium influences its mobility in the aqueous… (more)

Subjects/Keywords: Electrochemical reduction of uranyl(VI); Pentavalent uranium on magnetite; UO2-HfO2 solid solution; Geology and Earth Sciences; Science

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APA (6th Edition):

Yuan, K. (2015). Electrochemical Investigations of Redox Reactions of Uranyl(VI) on Magnetite and Computational Modeling of the UO2-HfO2 Solid Solution. (Doctoral Dissertation). University of Michigan. Retrieved from http://hdl.handle.net/2027.42/113292

Chicago Manual of Style (16th Edition):

Yuan, Ke. “Electrochemical Investigations of Redox Reactions of Uranyl(VI) on Magnetite and Computational Modeling of the UO2-HfO2 Solid Solution.” 2015. Doctoral Dissertation, University of Michigan. Accessed July 19, 2019. http://hdl.handle.net/2027.42/113292.

MLA Handbook (7th Edition):

Yuan, Ke. “Electrochemical Investigations of Redox Reactions of Uranyl(VI) on Magnetite and Computational Modeling of the UO2-HfO2 Solid Solution.” 2015. Web. 19 Jul 2019.

Vancouver:

Yuan K. Electrochemical Investigations of Redox Reactions of Uranyl(VI) on Magnetite and Computational Modeling of the UO2-HfO2 Solid Solution. [Internet] [Doctoral dissertation]. University of Michigan; 2015. [cited 2019 Jul 19]. Available from: http://hdl.handle.net/2027.42/113292.

Council of Science Editors:

Yuan K. Electrochemical Investigations of Redox Reactions of Uranyl(VI) on Magnetite and Computational Modeling of the UO2-HfO2 Solid Solution. [Doctoral Dissertation]. University of Michigan; 2015. Available from: http://hdl.handle.net/2027.42/113292


Université de Grenoble

22. Piallat, Fabien. Plasma assisted chemical deposition (CVD/ALD) and integration of Ti(Al)N and Ta(Al)N for sub-20 nm metal gate : Dépôt chimique (CVD/ALD) assisté par plasma et intégration de Ti(Al)N et Ta(Al)N pour les métaux de grille sub-20nm.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2014, Université de Grenoble

L'intégration du métal dans les nœuds technologiques sub-20 nm requiert une conformité supérieure à celle permise par la PVD. Les techniques de CVD, plus spécifiquement… (more)

Subjects/Keywords: Empilement de grille; MOCVD; ALD; Plasma; Ti(C)N; Ta(C)N; HfO2; Interface; Interaction; XPS; Gate stack; MOCVD; ALD; Plasma; Ti(C)N; Ta(C)N; HfO2; Interface; Interaction; XPS; 620

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APA (6th Edition):

Piallat, F. (2014). Plasma assisted chemical deposition (CVD/ALD) and integration of Ti(Al)N and Ta(Al)N for sub-20 nm metal gate : Dépôt chimique (CVD/ALD) assisté par plasma et intégration de Ti(Al)N et Ta(Al)N pour les métaux de grille sub-20nm. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2014GRENT015

Chicago Manual of Style (16th Edition):

Piallat, Fabien. “Plasma assisted chemical deposition (CVD/ALD) and integration of Ti(Al)N and Ta(Al)N for sub-20 nm metal gate : Dépôt chimique (CVD/ALD) assisté par plasma et intégration de Ti(Al)N et Ta(Al)N pour les métaux de grille sub-20nm.” 2014. Doctoral Dissertation, Université de Grenoble. Accessed July 19, 2019. http://www.theses.fr/2014GRENT015.

MLA Handbook (7th Edition):

Piallat, Fabien. “Plasma assisted chemical deposition (CVD/ALD) and integration of Ti(Al)N and Ta(Al)N for sub-20 nm metal gate : Dépôt chimique (CVD/ALD) assisté par plasma et intégration de Ti(Al)N et Ta(Al)N pour les métaux de grille sub-20nm.” 2014. Web. 19 Jul 2019.

Vancouver:

Piallat F. Plasma assisted chemical deposition (CVD/ALD) and integration of Ti(Al)N and Ta(Al)N for sub-20 nm metal gate : Dépôt chimique (CVD/ALD) assisté par plasma et intégration de Ti(Al)N et Ta(Al)N pour les métaux de grille sub-20nm. [Internet] [Doctoral dissertation]. Université de Grenoble; 2014. [cited 2019 Jul 19]. Available from: http://www.theses.fr/2014GRENT015.

Council of Science Editors:

Piallat F. Plasma assisted chemical deposition (CVD/ALD) and integration of Ti(Al)N and Ta(Al)N for sub-20 nm metal gate : Dépôt chimique (CVD/ALD) assisté par plasma et intégration de Ti(Al)N et Ta(Al)N pour les métaux de grille sub-20nm. [Doctoral Dissertation]. Université de Grenoble; 2014. Available from: http://www.theses.fr/2014GRENT015

23. Traoré, Boubacar. Etude des cellules mémoires résistives RRAM à base de HfO2 par caractérisation électrique et simulations atomistiques : Investigation of HfO2-based resistive RAM cells by electrical characterization and atomistic simulations.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Grenoble Alpes

La mémoire NAND Flash représente une part importante dans le marché des circuits intégrés et a bénéficié de la traditionnelle miniaturisation de l’industrie des sémiconducteurs… (more)

Subjects/Keywords: Mémoire résistives RRAM; Sous oxides HfOx; HfO2; Ab initio simulations atomistiques; Diffusion migration des défauts; Formation du filament conducteur; Resistive memory RRAM; HfOx suboxides; HfO2; Ab initio atomistic simulations; Diffusion migration of defects; Conductive filament formation; 620

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APA (6th Edition):

Traoré, B. (2015). Etude des cellules mémoires résistives RRAM à base de HfO2 par caractérisation électrique et simulations atomistiques : Investigation of HfO2-based resistive RAM cells by electrical characterization and atomistic simulations. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAT037

Chicago Manual of Style (16th Edition):

Traoré, Boubacar. “Etude des cellules mémoires résistives RRAM à base de HfO2 par caractérisation électrique et simulations atomistiques : Investigation of HfO2-based resistive RAM cells by electrical characterization and atomistic simulations.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed July 19, 2019. http://www.theses.fr/2015GREAT037.

MLA Handbook (7th Edition):

Traoré, Boubacar. “Etude des cellules mémoires résistives RRAM à base de HfO2 par caractérisation électrique et simulations atomistiques : Investigation of HfO2-based resistive RAM cells by electrical characterization and atomistic simulations.” 2015. Web. 19 Jul 2019.

Vancouver:

Traoré B. Etude des cellules mémoires résistives RRAM à base de HfO2 par caractérisation électrique et simulations atomistiques : Investigation of HfO2-based resistive RAM cells by electrical characterization and atomistic simulations. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2019 Jul 19]. Available from: http://www.theses.fr/2015GREAT037.

Council of Science Editors:

Traoré B. Etude des cellules mémoires résistives RRAM à base de HfO2 par caractérisation électrique et simulations atomistiques : Investigation of HfO2-based resistive RAM cells by electrical characterization and atomistic simulations. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAT037

24. Tirano, Sauveur. Intégration et caractérisation électrique d'éléments de mémorisation à commutation de résistance de type back-end à base d'oxydes métalliques. : Would it be possible to integrate Africans in the account of French national history ? : Study of ecological didactic of a History lesson in an elementary school.

Degree: Docteur es, Micro et Nanoélectronique, 2013, Aix Marseille Université

Cette thèse porte principalement sur la caractérisation électrique et la modélisation physique d'éléments mémoires émergents de type OxRRAM (Oxide Resistive Random Access Memory) intégrant soit… (more)

Subjects/Keywords: OxRRAM; Mémoire non volatile; HfO2; NiO; Caractérisation électrique; Pulvérisation cathodique réactive; Oxydation thermique; Capacité parasite; Simulation physique; BEOL; OxRRAM; Non volatile memory,; HfO2; NiO; Electrical characterization; Cathodic reactive sputtering; Thermal oxidation; Parasitic capacitance; Physical simulation; BEOL; 620.5

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APA (6th Edition):

Tirano, S. (2013). Intégration et caractérisation électrique d'éléments de mémorisation à commutation de résistance de type back-end à base d'oxydes métalliques. : Would it be possible to integrate Africans in the account of French national history ? : Study of ecological didactic of a History lesson in an elementary school. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2013AIXM4713

Chicago Manual of Style (16th Edition):

Tirano, Sauveur. “Intégration et caractérisation électrique d'éléments de mémorisation à commutation de résistance de type back-end à base d'oxydes métalliques. : Would it be possible to integrate Africans in the account of French national history ? : Study of ecological didactic of a History lesson in an elementary school.” 2013. Doctoral Dissertation, Aix Marseille Université. Accessed July 19, 2019. http://www.theses.fr/2013AIXM4713.

MLA Handbook (7th Edition):

Tirano, Sauveur. “Intégration et caractérisation électrique d'éléments de mémorisation à commutation de résistance de type back-end à base d'oxydes métalliques. : Would it be possible to integrate Africans in the account of French national history ? : Study of ecological didactic of a History lesson in an elementary school.” 2013. Web. 19 Jul 2019.

Vancouver:

Tirano S. Intégration et caractérisation électrique d'éléments de mémorisation à commutation de résistance de type back-end à base d'oxydes métalliques. : Would it be possible to integrate Africans in the account of French national history ? : Study of ecological didactic of a History lesson in an elementary school. [Internet] [Doctoral dissertation]. Aix Marseille Université 2013. [cited 2019 Jul 19]. Available from: http://www.theses.fr/2013AIXM4713.

Council of Science Editors:

Tirano S. Intégration et caractérisation électrique d'éléments de mémorisation à commutation de résistance de type back-end à base d'oxydes métalliques. : Would it be possible to integrate Africans in the account of French national history ? : Study of ecological didactic of a History lesson in an elementary school. [Doctoral Dissertation]. Aix Marseille Université 2013. Available from: http://www.theses.fr/2013AIXM4713

25. Minvielle, Marie. Etude de la commutation résistive d'oxydes binaires (HfO2, TiO2) élaborés par dépôt par jets moléculaires et intégrés dans des dispositifs de type memristifs métal-oxyde-métal : effets du dopage et de l'implantation : Resistive switching study of binary oxides (HfO2, TiO2) deposited by molecular beam epitaxy and integrated in metal/oxide/metal memristive type devices : effect of doping and implantation.

Degree: Docteur es, Electronique, micro et nanoélectronique, optique et laser, 2017, Lyon

 A l’ère du « big data » et de l’intelligence artificielle, les recherches pour trouver de nouvelles façons de stocker et traiter l’information se multiplient.… (more)

Subjects/Keywords: Mémoires non volatiles; Commutation résistive; OxRAM; Dispositifs nanométriques; HfO2; TiO2; MBE; Mesures I-V; XPS; Lacunes d’oxygène; Ajout d’éléments; Aspects iono-électroniques; Non-volatile memories; Resistive switching; OxRAM; Nanometer devices HfO2; TiO2; MBE; I-V measurements; XPS analyses; Oxygen vacancies; Element additions; Iono-electronics aspects

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Minvielle, M. (2017). Etude de la commutation résistive d'oxydes binaires (HfO2, TiO2) élaborés par dépôt par jets moléculaires et intégrés dans des dispositifs de type memristifs métal-oxyde-métal : effets du dopage et de l'implantation : Resistive switching study of binary oxides (HfO2, TiO2) deposited by molecular beam epitaxy and integrated in metal/oxide/metal memristive type devices : effect of doping and implantation. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2017LYSEC023

Chicago Manual of Style (16th Edition):

Minvielle, Marie. “Etude de la commutation résistive d'oxydes binaires (HfO2, TiO2) élaborés par dépôt par jets moléculaires et intégrés dans des dispositifs de type memristifs métal-oxyde-métal : effets du dopage et de l'implantation : Resistive switching study of binary oxides (HfO2, TiO2) deposited by molecular beam epitaxy and integrated in metal/oxide/metal memristive type devices : effect of doping and implantation.” 2017. Doctoral Dissertation, Lyon. Accessed July 19, 2019. http://www.theses.fr/2017LYSEC023.

MLA Handbook (7th Edition):

Minvielle, Marie. “Etude de la commutation résistive d'oxydes binaires (HfO2, TiO2) élaborés par dépôt par jets moléculaires et intégrés dans des dispositifs de type memristifs métal-oxyde-métal : effets du dopage et de l'implantation : Resistive switching study of binary oxides (HfO2, TiO2) deposited by molecular beam epitaxy and integrated in metal/oxide/metal memristive type devices : effect of doping and implantation.” 2017. Web. 19 Jul 2019.

Vancouver:

Minvielle M. Etude de la commutation résistive d'oxydes binaires (HfO2, TiO2) élaborés par dépôt par jets moléculaires et intégrés dans des dispositifs de type memristifs métal-oxyde-métal : effets du dopage et de l'implantation : Resistive switching study of binary oxides (HfO2, TiO2) deposited by molecular beam epitaxy and integrated in metal/oxide/metal memristive type devices : effect of doping and implantation. [Internet] [Doctoral dissertation]. Lyon; 2017. [cited 2019 Jul 19]. Available from: http://www.theses.fr/2017LYSEC023.

Council of Science Editors:

Minvielle M. Etude de la commutation résistive d'oxydes binaires (HfO2, TiO2) élaborés par dépôt par jets moléculaires et intégrés dans des dispositifs de type memristifs métal-oxyde-métal : effets du dopage et de l'implantation : Resistive switching study of binary oxides (HfO2, TiO2) deposited by molecular beam epitaxy and integrated in metal/oxide/metal memristive type devices : effect of doping and implantation. [Doctoral Dissertation]. Lyon; 2017. Available from: http://www.theses.fr/2017LYSEC023


Indian Institute of Science

26. Jajala, Bujjamma. Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications.

Degree: 2010, Indian Institute of Science

 The scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistors to sub-100nm requires replacement of conventional Silicon dioxide layer with high dielectric constant (K) material… (more)

Subjects/Keywords: Thin Films -; Dielecrtics; Complementary Metal Oxide Semiconductor (CMOS); Thin Film Deposition; Hafnium Dioxide Thin Films; HfO2 Thin Films; high-K Dielectrics; Ion Assisted Deposition (IAD); Condensed Matter Physics

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jajala, B. (2010). Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/2241

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jajala, Bujjamma. “Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications.” 2010. Thesis, Indian Institute of Science. Accessed July 19, 2019. http://hdl.handle.net/2005/2241.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jajala, Bujjamma. “Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications.” 2010. Web. 19 Jul 2019.

Vancouver:

Jajala B. Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications. [Internet] [Thesis]. Indian Institute of Science; 2010. [cited 2019 Jul 19]. Available from: http://hdl.handle.net/2005/2241.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jajala B. Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications. [Thesis]. Indian Institute of Science; 2010. Available from: http://hdl.handle.net/2005/2241

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

27. Botzakaki, Martha. Ανάπτυξη και χαρακτηρισμός οξειδίων υψηλής διηλεκτρικής σταθεράς σε διατάξεις MOS p-Ge.

Degree: 2015, University of Patras; Πανεπιστήμιο Πατρών

 In the present doctoral dissertation, the implementation of high-k dielectrics (Al2O3, HfO2 και ZrO2) was studied as gate materials, in MOS structures developed on p-type… (more)

Subjects/Keywords: Υλικά υψηλής διηλεκτρικής σταθεράς; Γερμάνιο; ALD; Ηλεκτρικός χαρακτηρισμός; Στρώματα αδρανοποίησης; XPS; MOS δομές; High-k dielectrics; Al2O3; HfO2; ZrO2; MOS; Ge; passivation layers; GeO2; Plasma oxidation; XPS

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Botzakaki, M. (2015). Ανάπτυξη και χαρακτηρισμός οξειδίων υψηλής διηλεκτρικής σταθεράς σε διατάξεις MOS p-Ge. (Thesis). University of Patras; Πανεπιστήμιο Πατρών. Retrieved from http://hdl.handle.net/10442/hedi/36511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Botzakaki, Martha. “Ανάπτυξη και χαρακτηρισμός οξειδίων υψηλής διηλεκτρικής σταθεράς σε διατάξεις MOS p-Ge.” 2015. Thesis, University of Patras; Πανεπιστήμιο Πατρών. Accessed July 19, 2019. http://hdl.handle.net/10442/hedi/36511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Botzakaki, Martha. “Ανάπτυξη και χαρακτηρισμός οξειδίων υψηλής διηλεκτρικής σταθεράς σε διατάξεις MOS p-Ge.” 2015. Web. 19 Jul 2019.

Vancouver:

Botzakaki M. Ανάπτυξη και χαρακτηρισμός οξειδίων υψηλής διηλεκτρικής σταθεράς σε διατάξεις MOS p-Ge. [Internet] [Thesis]. University of Patras; Πανεπιστήμιο Πατρών; 2015. [cited 2019 Jul 19]. Available from: http://hdl.handle.net/10442/hedi/36511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Botzakaki M. Ανάπτυξη και χαρακτηρισμός οξειδίων υψηλής διηλεκτρικής σταθεράς σε διατάξεις MOS p-Ge. [Thesis]. University of Patras; Πανεπιστήμιο Πατρών; 2015. Available from: http://hdl.handle.net/10442/hedi/36511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

28. Jajala, Bujjamma. Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications.

Degree: 2010, Indian Institute of Science

 The scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistors to sub-100nm requires replacement of conventional Silicon dioxide layer with high dielectric constant (K) material… (more)

Subjects/Keywords: Thin Films -; Dielecrtics; Complementary Metal Oxide Semiconductor (CMOS); Thin Film Deposition; Hafnium Dioxide Thin Films; HfO2 Thin Films; high-K Dielectrics; Ion Assisted Deposition (IAD); Condensed Matter Physics

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jajala, B. (2010). Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/handle/2005/2241 ; http://etd.ncsi.iisc.ernet.in/abstracts/2855/G24418-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jajala, Bujjamma. “Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications.” 2010. Thesis, Indian Institute of Science. Accessed July 19, 2019. http://etd.iisc.ernet.in/handle/2005/2241 ; http://etd.ncsi.iisc.ernet.in/abstracts/2855/G24418-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jajala, Bujjamma. “Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications.” 2010. Web. 19 Jul 2019.

Vancouver:

Jajala B. Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications. [Internet] [Thesis]. Indian Institute of Science; 2010. [cited 2019 Jul 19]. Available from: http://etd.iisc.ernet.in/handle/2005/2241 ; http://etd.ncsi.iisc.ernet.in/abstracts/2855/G24418-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jajala B. Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications. [Thesis]. Indian Institute of Science; 2010. Available from: http://etd.iisc.ernet.in/handle/2005/2241 ; http://etd.ncsi.iisc.ernet.in/abstracts/2855/G24418-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

29. Duan, Guoxing. Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices.

Degree: MS, Electrical Engineering, 2014, Vanderbilt University

 The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases have been evaluated. Negative bias irradiation leads to the worst-case degradation… (more)

Subjects/Keywords: interface traps; HfO2; SiGe; NBTI; TID; oxide-trap charge

HfO2 ~23 5.6-5.7 4.5-5.7 1.3-1.5 0.8-1.4 Most suitable compared Crystallization… …silicate and silicide to other candidates ZrO2 ~20 formation Similar to HfO2 High Qox and… …Hafnium oxide (HfO2) and zirconium oxide (ZrO2) have been demonstrated to be… …shown in Fig. 1.1. The thermodynamic stability of the high-k dielectrics ZrO2 and HfO2 in… …contact with Si and SiO2 has been calculated by Gutowski et al. [4]. The HfO2/Si… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Duan, G. (2014). Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03252014-171550/ ;

Chicago Manual of Style (16th Edition):

Duan, Guoxing. “Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices.” 2014. Masters Thesis, Vanderbilt University. Accessed July 19, 2019. http://etd.library.vanderbilt.edu/available/etd-03252014-171550/ ;.

MLA Handbook (7th Edition):

Duan, Guoxing. “Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices.” 2014. Web. 19 Jul 2019.

Vancouver:

Duan G. Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices. [Internet] [Masters thesis]. Vanderbilt University; 2014. [cited 2019 Jul 19]. Available from: http://etd.library.vanderbilt.edu/available/etd-03252014-171550/ ;.

Council of Science Editors:

Duan G. Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices. [Masters Thesis]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-03252014-171550/ ;

30. HWANG WAN SIK. Study on advanced gate stack using high-k dielectric and metal electrode.

Degree: 2008, National University of Singapore

Subjects/Keywords: Metal electrode; high-k dielectrics; gate stacks; plasma etching; TaN; HfO2

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

SIK, H. W. (2008). Study on advanced gate stack using high-k dielectric and metal electrode. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/13131

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

SIK, HWANG WAN. “Study on advanced gate stack using high-k dielectric and metal electrode.” 2008. Thesis, National University of Singapore. Accessed July 19, 2019. http://scholarbank.nus.edu.sg/handle/10635/13131.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

SIK, HWANG WAN. “Study on advanced gate stack using high-k dielectric and metal electrode.” 2008. Web. 19 Jul 2019.

Vancouver:

SIK HW. Study on advanced gate stack using high-k dielectric and metal electrode. [Internet] [Thesis]. National University of Singapore; 2008. [cited 2019 Jul 19]. Available from: http://scholarbank.nus.edu.sg/handle/10635/13131.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

SIK HW. Study on advanced gate stack using high-k dielectric and metal electrode. [Thesis]. National University of Singapore; 2008. Available from: http://scholarbank.nus.edu.sg/handle/10635/13131

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2]

.