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Hong Kong University of Science and Technology
1.
Zhang, Qicheng.
Graphene-based van der Waals heterostructures and the effects of interface.
Degree: 2016, Hong Kong University of Science and Technology
URL: http://repository.ust.hk/ir/Record/1783.1-87030
;
https://doi.org/10.14711/thesis-b1626231
;
http://repository.ust.hk/ir/bitstream/1783.1-87030/1/th_redirect.html
► Rich properties of two dimensional (2D) materials have been attracting great effort to exploration of novel 2D materials and quasi-2D systems. Van der Waals heterostructures…
(more)
▼ Rich properties of two dimensional (2D) materials have been attracting great effort to exploration of novel 2D materials and quasi-2D systems. Van der Waals heterostructures are possible method to create quasi-2D systems, by layer-by-layer assemble of 2D atomical crystals. Free stacking with a variety of materials in different configurations are envisioned for van der Waals materials, owing to their weak interlayer binding energy, stable surface and lack of dangling bond. In this work, study of optical properties of van der Waals heterostructures of graphene and mica discovered the interfacial trap states induced trion splitting of MoS2, illustrating the aspect of van der Waals heterostructures as quasi-2D systems. Besides, an exploration to possible synthesis of 2D polymers, a special category of 2D materials, reveals another aspect of van der Waals heterostructures as a potential tool to fabricate 2D materials. The spreading of molecules as monolayer is found to be favored in the gap of van der Waals heterostructure of graphene and mica against a second layer. And the effects of graphene/mica heterostructure to dynamics of molecules at the interface are studied. Combining the features of dynamics of molecules trapped in van der Waals heterostructure and spreading at interface, reveals that the effects of forces of van der Waals heterostructures on molecules have great differences in layer number. This study demonstrates that van der Waals materials and their heterostructures open new ways to access to the atomical scale 2D materials and quasi-2D systems.
Subjects/Keywords: Graphene
; Quasimolecules
; Heterostructures
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APA (6th Edition):
Zhang, Q. (2016). Graphene-based van der Waals heterostructures and the effects of interface. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-87030 ; https://doi.org/10.14711/thesis-b1626231 ; http://repository.ust.hk/ir/bitstream/1783.1-87030/1/th_redirect.html
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Zhang, Qicheng. “Graphene-based van der Waals heterostructures and the effects of interface.” 2016. Thesis, Hong Kong University of Science and Technology. Accessed April 10, 2021.
http://repository.ust.hk/ir/Record/1783.1-87030 ; https://doi.org/10.14711/thesis-b1626231 ; http://repository.ust.hk/ir/bitstream/1783.1-87030/1/th_redirect.html.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Zhang, Qicheng. “Graphene-based van der Waals heterostructures and the effects of interface.” 2016. Web. 10 Apr 2021.
Vancouver:
Zhang Q. Graphene-based van der Waals heterostructures and the effects of interface. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2016. [cited 2021 Apr 10].
Available from: http://repository.ust.hk/ir/Record/1783.1-87030 ; https://doi.org/10.14711/thesis-b1626231 ; http://repository.ust.hk/ir/bitstream/1783.1-87030/1/th_redirect.html.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Zhang Q. Graphene-based van der Waals heterostructures and the effects of interface. [Thesis]. Hong Kong University of Science and Technology; 2016. Available from: http://repository.ust.hk/ir/Record/1783.1-87030 ; https://doi.org/10.14711/thesis-b1626231 ; http://repository.ust.hk/ir/bitstream/1783.1-87030/1/th_redirect.html
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Adelaide
2.
Taylor, Graham Frank.
Misfit and mechanism in structure changes in crystals of univalent nitrates / Graham Frank Taylor.
Degree: 1966, University of Adelaide
URL: http://hdl.handle.net/2440/20429
The object of the work was to study the dependence of structure changes on interfacial misfit in crystals of univalent nitrates. Techniques used were single crystal X-ray diffraction and cinephotomicroscopy.
Advisors/Committee Members: Dept. of Physical and Inorganic Chemistry (school).
Subjects/Keywords: Heterostructures.; Nitrates.
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Taylor, G. F. (1966). Misfit and mechanism in structure changes in crystals of univalent nitrates / Graham Frank Taylor. (Thesis). University of Adelaide. Retrieved from http://hdl.handle.net/2440/20429
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Taylor, Graham Frank. “Misfit and mechanism in structure changes in crystals of univalent nitrates / Graham Frank Taylor.” 1966. Thesis, University of Adelaide. Accessed April 10, 2021.
http://hdl.handle.net/2440/20429.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Taylor, Graham Frank. “Misfit and mechanism in structure changes in crystals of univalent nitrates / Graham Frank Taylor.” 1966. Web. 10 Apr 2021.
Vancouver:
Taylor GF. Misfit and mechanism in structure changes in crystals of univalent nitrates / Graham Frank Taylor. [Internet] [Thesis]. University of Adelaide; 1966. [cited 2021 Apr 10].
Available from: http://hdl.handle.net/2440/20429.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Taylor GF. Misfit and mechanism in structure changes in crystals of univalent nitrates / Graham Frank Taylor. [Thesis]. University of Adelaide; 1966. Available from: http://hdl.handle.net/2440/20429
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Hong Kong University of Science and Technology
3.
Shen, Junying.
Investigation of superconductivity in 3D doped topological insulators, 2D heterostructures and 1D nanowires.
Degree: 2017, Hong Kong University of Science and Technology
URL: http://repository.ust.hk/ir/Record/1783.1-89176
;
https://doi.org/10.14711/thesis-991012535566903412
;
http://repository.ust.hk/ir/bitstream/1783.1-89176/1/th_redirect.html
► Superconductivity presents itself many peculiar and interesting properties in different dimensionalities, which have attracted much attention ever since it has been discovered in bulk materials.…
(more)
▼ Superconductivity presents itself many peculiar and interesting properties in different dimensionalities, which have attracted much attention ever since it has been discovered in bulk materials. At an early stage, theoretical models were established in 3D regimes to describe the conventional bulk superconductivity, while superconductivity was also gradually observed and well studied in 2D, 1D and 0D materials, both experimentally and theoretically. Nevertheless, new superconducting materials are emerging regularly, with novel phenomena, unknown mechanisms and the potential to future applications. This makes superconductivity so charming that people never let up the efforts to further excavate and explore the mystery of superconductors. In this thesis work, I will investigate superconductivity in several materials, including a Nb doped bulk topological insulator (NbxBi2Se3), 2D interfacial superconductor (Bi2Te3/Fe1+yTe) and 1D nanowires (Sn and Al). The basic concepts of superconductivity and corresponding microscopic theories will be introduced in Chapter 1, including the London equation, the Ginzburg-Landau theory and the Bardeen-Cooper-Schrieffer (BCS) theory. Especially, the BCS theory is applicable to conventional superconductors, of which electrons can be weakly bonded as Cooper pairs and move without any resistance below the superconducting transition temperature Tc. However, in low dimensionality, thermal fluctuation activated phase slips of the order parameter will be enhanced and result in a finite resistance in 1D or 2D materials below Tc. For 1D superconductors, such a process has been well explained by the Langer-Ambegaokar-McCumber-Halperin (LAMH) theory. For 2D superconducting materials (thin films or Josephson junctions), vortex-antivortex bonded pairs can form a quasi-long-range-ordered phase coherent state in the 2D plane below a characteristic temperature TBKT, which is slightly lower than Tc. Therefore, a zero resistance state could also be established in 2D films or Josephson junctions, which fall in the same universality class, and such a transition is described by the well-known Berezinskii-Kosterlitz-Thouless (BKT) theory. Various instruments and methods have been involved in this thesis work, which will be briefly described in Chapter 2. Mainly, I focus on the transportation properties and magnetization investigations, and one of my frequently used techniques, the point-contact spectroscopy, will be thoroughly discussed with the corresponding theoretical model, the Blonder-Tinkham-Klapwijk (BTK) model, being presented. In the following Chapter 3, a study of the upper critical field transition in Nb doped Bi2Se3 by field-angle-resolved resistive and magnetization measurements will be presented. 3D topological insulators (TI) could become superconducting by doping with intercalation of metallic ions, such as CuxBi2Se3,…
Subjects/Keywords: Superconductivity
; Topological dynamics
; Heterostructures
; Nanowires
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Shen, J. (2017). Investigation of superconductivity in 3D doped topological insulators, 2D heterostructures and 1D nanowires. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-89176 ; https://doi.org/10.14711/thesis-991012535566903412 ; http://repository.ust.hk/ir/bitstream/1783.1-89176/1/th_redirect.html
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Shen, Junying. “Investigation of superconductivity in 3D doped topological insulators, 2D heterostructures and 1D nanowires.” 2017. Thesis, Hong Kong University of Science and Technology. Accessed April 10, 2021.
http://repository.ust.hk/ir/Record/1783.1-89176 ; https://doi.org/10.14711/thesis-991012535566903412 ; http://repository.ust.hk/ir/bitstream/1783.1-89176/1/th_redirect.html.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Shen, Junying. “Investigation of superconductivity in 3D doped topological insulators, 2D heterostructures and 1D nanowires.” 2017. Web. 10 Apr 2021.
Vancouver:
Shen J. Investigation of superconductivity in 3D doped topological insulators, 2D heterostructures and 1D nanowires. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2017. [cited 2021 Apr 10].
Available from: http://repository.ust.hk/ir/Record/1783.1-89176 ; https://doi.org/10.14711/thesis-991012535566903412 ; http://repository.ust.hk/ir/bitstream/1783.1-89176/1/th_redirect.html.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Shen J. Investigation of superconductivity in 3D doped topological insulators, 2D heterostructures and 1D nanowires. [Thesis]. Hong Kong University of Science and Technology; 2017. Available from: http://repository.ust.hk/ir/Record/1783.1-89176 ; https://doi.org/10.14711/thesis-991012535566903412 ; http://repository.ust.hk/ir/bitstream/1783.1-89176/1/th_redirect.html
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Ottawa
4.
Hadadi, Wafa.
Electronic Properties of Heterostructures of 2D Materials: An Ab-Initio Study
.
Degree: 2020, University of Ottawa
URL: http://hdl.handle.net/10393/40128
► Researchers have recently become interested in two-dimensional materials such as graphene, hexagonal boron nitride (h-BN), Transition Metal Dichalcogenides (TMDs), etc. Their 2D hexagonal structures result…
(more)
▼ Researchers have recently become interested in two-dimensional materials such as graphene,
hexagonal boron nitride (h-BN), Transition Metal Dichalcogenides (TMDs), etc. Their 2D
hexagonal structures result in unique properties, which make these materials attractive for
scientists and engineers. In this work, we investigated the electronic properties of graphene,
h-BN, and MoS2 based on density functional theory (DFT). We first studied the electronic
properties of monolayers of different materials. We found a zero bandgap and observed
massless Dirac Hamiltonian in graphene. For h-BN, a large bandgap at K-point was observed.
Also, we observed the bandgap opening in MoS2 and a strong splitting of its bands. Then,
we extended these studies to graphene and h-BN bilayers. For graphene bilayer, we observed
a gapless material and massive Dirac fermions. For h-BN bilayer, an indirect bandgap was
observed, smaller in comparison with its monolayer. The main focus of this study was the
investigation of graphene/h-BN heterostructures for different stacking configurations. The
suitability of h-BN as a substrate for graphene is due to its small lattice constant mismatch
with graphene and its high insulating gap (~ 5 eV). Another important aspect to be observed
in graphene/h-BN heterostructures is the gap opening brought by the h-BN layer proximity
to the initially gapless graphene layer. We found the effect of bandgap opening in graphene/h-
BN and determined the most stable configuration which is the AB[CB]. This work supports
the findings of many researchers who demonstrate that graphene/h-BN heterostructures are
very useful as building blocks for nanodevices with desirable electronic properties.
Subjects/Keywords: Heterostructures;
Two-dimensional materials
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Hadadi, W. (2020). Electronic Properties of Heterostructures of 2D Materials: An Ab-Initio Study
. (Thesis). University of Ottawa. Retrieved from http://hdl.handle.net/10393/40128
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Hadadi, Wafa. “Electronic Properties of Heterostructures of 2D Materials: An Ab-Initio Study
.” 2020. Thesis, University of Ottawa. Accessed April 10, 2021.
http://hdl.handle.net/10393/40128.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Hadadi, Wafa. “Electronic Properties of Heterostructures of 2D Materials: An Ab-Initio Study
.” 2020. Web. 10 Apr 2021.
Vancouver:
Hadadi W. Electronic Properties of Heterostructures of 2D Materials: An Ab-Initio Study
. [Internet] [Thesis]. University of Ottawa; 2020. [cited 2021 Apr 10].
Available from: http://hdl.handle.net/10393/40128.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Hadadi W. Electronic Properties of Heterostructures of 2D Materials: An Ab-Initio Study
. [Thesis]. University of Ottawa; 2020. Available from: http://hdl.handle.net/10393/40128
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Oregon
5.
Bauers, Sage.
Nanoarchitecture-property Relationships in Tise2 Based Nanolaminates for Development of Novel Design Strategies in Composite Thermoelectric Materials.
Degree: PhD, Department of Chemistry and Biochemistry, 2017, University of Oregon
URL: http://hdl.handle.net/1794/22264
► This dissertation is centered on investigation of metastable thermoelectric thin film materials and is split into 3 primary sections. Section 1 focuses on formation mechanisms…
(more)
▼ This dissertation is centered on investigation of metastable thermoelectric thin film materials and is split into 3 primary sections. Section 1 focuses on formation mechanisms of FeSbx compounds from layered precursors. It was found that a compositionally favorable and homogeneous nucleation environment allowed for the nucleation of a metastable phase, which surprisingly resembles the local coordination environment of the precursors, even in cases where they are compositionally unfavorable. Over the course of this work, the technique of normal-incidence thin film pair distribution function analysis is introduced, which allows for rapid acquisition and analysis of local structure data from intact thin films.
Section 2 investigates changes in the stacking sequences of ([PbSe]1+δ)m(TiSe2)n nanolaminate materials, which consist of interleaved layers of each compound in the chemical formula, and how these changes effect the thermoelectric power factor. Homologous series of systematically varying m and n values are investigated and measured properties are correlated back to the designed nanoarchitecture of the laminate materials. It is found that the compounds are stabilized by electron exchange between constituents at the interfaces, and that ‘doping’ of the laminate structure by changing the relative amounts of each constituent is an effective means of optimizing their transport properties. It is also shown that interface density between constituents can be utilized to optimize performance.
Section 3 moves from the case of PbSe layers, which maintain their structure, to SnSe layers that significantly distort as the layer size is changed. The distortions in SnSe are observed to occur from templating off TiSe2 layers. As the size of the SnSe layers increases, relatively fewer templated interfacial atoms exist and stabilization of interior atoms must also be considered. The coarse behaviors developed in ([PbSe]1+δ)m(TiSe2)n hold, but the structural distortions in SnSe likely change the band structure of this constituent and hence the composite material, complicating the analysis. In some cases, these changes allow for radically different behavior, best exemplified with high TiSe2 ratios in ([SnSe]1+δ)1(TiSe2)n displaying significant enhancement of the Seebeck coefficient at cryogenic temperatures over the low-n and PbSe-containing analogues.
This dissertation includes previously published and unpublished coauthored material.
Advisors/Committee Members: Johnson, David (advisor).
Subjects/Keywords: Heterostructures; Nanomaterials; Thermoelectrics; Thin films
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Bauers, S. (2017). Nanoarchitecture-property Relationships in Tise2 Based Nanolaminates for Development of Novel Design Strategies in Composite Thermoelectric Materials. (Doctoral Dissertation). University of Oregon. Retrieved from http://hdl.handle.net/1794/22264
Chicago Manual of Style (16th Edition):
Bauers, Sage. “Nanoarchitecture-property Relationships in Tise2 Based Nanolaminates for Development of Novel Design Strategies in Composite Thermoelectric Materials.” 2017. Doctoral Dissertation, University of Oregon. Accessed April 10, 2021.
http://hdl.handle.net/1794/22264.
MLA Handbook (7th Edition):
Bauers, Sage. “Nanoarchitecture-property Relationships in Tise2 Based Nanolaminates for Development of Novel Design Strategies in Composite Thermoelectric Materials.” 2017. Web. 10 Apr 2021.
Vancouver:
Bauers S. Nanoarchitecture-property Relationships in Tise2 Based Nanolaminates for Development of Novel Design Strategies in Composite Thermoelectric Materials. [Internet] [Doctoral dissertation]. University of Oregon; 2017. [cited 2021 Apr 10].
Available from: http://hdl.handle.net/1794/22264.
Council of Science Editors:
Bauers S. Nanoarchitecture-property Relationships in Tise2 Based Nanolaminates for Development of Novel Design Strategies in Composite Thermoelectric Materials. [Doctoral Dissertation]. University of Oregon; 2017. Available from: http://hdl.handle.net/1794/22264

University of Minnesota
6.
Sammon, Michael.
Electronic Properties of Oxide and Semiconductor Heterostructures.
Degree: PhD, Physics, 2019, University of Minnesota
URL: http://hdl.handle.net/11299/208993
► The modern world's dependency on electronics provides a constant need to discover new materials and devices. A promising technique to fabricate a new device is…
(more)
▼ The modern world's dependency on electronics provides a constant need to discover new materials and devices. A promising technique to fabricate a new device is to create a heterostructure; a device consisting of two bulk crystals joined at an interface. These materials often support a low dimensional electron gas confined to the interface, which exhibits properties different than both the parent materials. These materials have led to the creation of MOSfets, the discovery of the quantum Hall effect, and in recent years the discovery of Majorana edge modes in nanowires. In this thesis, we study several different heterostructures. We begin with one of the most famous heterostructures, AlGaAs/GaAs. Modern AlGaAs/GaAs heterostructures support a high mobility two-dimensional electron gas (2DEG) in a quantum well. The 2DEG is provided by two remote donor δ-layers placed on both sides of the well. Each δ-layer is located in the midplane of a narrow GaAs well, flanked by narrow AlAs layers which capture excess electrons from donors. We show that each excess electron is localized in a compact dipole atom with the nearest donor. The excess electrons screen both the remote donors and background impurities, and are responsible for the observed high mobility. Still, we find that the mobility is substantially lower than theoretical estimates, which may be due to significant disorder in the donor layers, most likely roughness of the interfaces or spreading of the donors out of the midplane of the layer. Thus one should take care to make sure that the donor layers are as ideal as possible. We next move on to oxide heterostructures involving SrTiO3 (STO). More specifically, we study the electron gas in accumulation layers of these heterostructures characterized by a density profile n(x), where x is the distance from the STO surface. SrTiO3 at liquid helium temperatures has the highest dielectric constant which strongly enhances the role of nonlinear dielectric effects. It was recently shown that the nonlinear dielectric response results in an electron density profile n(x) that slowly decays as 1/x12/7. We show that such a long tail of n(x) causes the magnetization and the specific heat of the accumulation layer to diverge at large x. We explore the truncation of the tail by the finite sample width W, the transition from the nonlinear to linear dielectric response with dielectric constant κ, and the use of a back gate with a negative voltage -\abs{V}. We find that as a result both the magnetization and specific heat are anomalously large and obey nontrivial power law dependences on W, κ, or \abs{V}. In the linear dielectric regime under a strong magnetic field, the large dielectric constant of STO makes it easy to reach a quasi-one-dimensional state known as the extreme quantum limit (EQL) in which all electrons occupy the lowest Landau level. We present a theory of the EQL phase in STO accumulation layers. We find a phase diagram of the electron gas in the plane of the…
Subjects/Keywords: Capacitance; Heterostructures; Semiconductors; Transport
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Sammon, M. (2019). Electronic Properties of Oxide and Semiconductor Heterostructures. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/208993
Chicago Manual of Style (16th Edition):
Sammon, Michael. “Electronic Properties of Oxide and Semiconductor Heterostructures.” 2019. Doctoral Dissertation, University of Minnesota. Accessed April 10, 2021.
http://hdl.handle.net/11299/208993.
MLA Handbook (7th Edition):
Sammon, Michael. “Electronic Properties of Oxide and Semiconductor Heterostructures.” 2019. Web. 10 Apr 2021.
Vancouver:
Sammon M. Electronic Properties of Oxide and Semiconductor Heterostructures. [Internet] [Doctoral dissertation]. University of Minnesota; 2019. [cited 2021 Apr 10].
Available from: http://hdl.handle.net/11299/208993.
Council of Science Editors:
Sammon M. Electronic Properties of Oxide and Semiconductor Heterostructures. [Doctoral Dissertation]. University of Minnesota; 2019. Available from: http://hdl.handle.net/11299/208993

University of Hong Kong
7.
王建峰.
Field modulation on
transport properties in heterostructures composed of perovskite
oxides.
Degree: 2011, University of Hong Kong
URL: http://hdl.handle.net/10722/145675
Subjects/Keywords: Heterostructures.;
Perovskite.
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
王建峰. (2011). Field modulation on
transport properties in heterostructures composed of perovskite
oxides. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/145675
Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
王建峰. “Field modulation on
transport properties in heterostructures composed of perovskite
oxides.” 2011. Thesis, University of Hong Kong. Accessed April 10, 2021.
http://hdl.handle.net/10722/145675.
Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
王建峰. “Field modulation on
transport properties in heterostructures composed of perovskite
oxides.” 2011. Web. 10 Apr 2021.
Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Vancouver:
王建峰. Field modulation on
transport properties in heterostructures composed of perovskite
oxides. [Internet] [Thesis]. University of Hong Kong; 2011. [cited 2021 Apr 10].
Available from: http://hdl.handle.net/10722/145675.
Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
王建峰. Field modulation on
transport properties in heterostructures composed of perovskite
oxides. [Thesis]. University of Hong Kong; 2011. Available from: http://hdl.handle.net/10722/145675
Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

University of Minnesota
8.
Ghasemi Azadani, Javad.
First-Principles Studies of Two-dimensional Semiconductor Heterostructures and Magnetic Materials.
Degree: PhD, Electrical Engineering, 2020, University of Minnesota
URL: http://hdl.handle.net/11299/218718
► Semiconductor heterostructures provide an exciting setting for novel electronic and optoelectronic devices. Energy band alignment in semiconductor heterostructures is one of the most important parameters…
(more)
▼ Semiconductor heterostructures provide an exciting setting for novel electronic and optoelectronic devices. Energy band alignment in semiconductor heterostructures is one of the most important parameters of design since it controls the electrical and optical properties. Extensive library of two-dimensional (2D) semiconductors allow us to create a wide range of heterostructures made by stacking different 2D semiconductors on top of each other, held by van der Waals forces.In this thesis we employ state-of-the-art first-principles calculations based on density functional theory (DFT) to investigate energy band alignments in two-dimensional (2D) semiconductor heterostructures. The Anderson and midgap models are often used in the study of semiconductor heterojunctions, but for van der Waals (vdW) vertical heterostructures they have shown only very limited success. Using the group-IV monochalcogenides as a prototypical system, we propose a linear response model and compare the effectiveness of these models in predicting DFT band alignments, band types and bandgaps. We show that the true band alignment can be obtained by the linear response model, which falls in between the Anderson and midgap models. Our proposed model can be characterized by an interface dipole eVh = α × (Em2-Em1), where the linear response coefficient α = 0 and 1 corresponds to the Anderson and midgap model respectively, and Em is the midgap energy of the monolayer which can be viewed as an effective electronegativity. For group-IV monochalcogenides, we show that α = 0.34 best captures the DFT band alignment of the vdW heterostructure, and we discuss the viability of the linear response model considering other effects such as strains and band hybridization.
Topological insulator has been touted as a very promising class of material for spintronics applications. A particular property of interest is its intrinsic spin-momentum locking protected by time reversal symmetry. However, in current state-of-the-art molecular beam epitaxial grown materials, various defects has been observed. Here we investigate effects of rotational defects and basal twins on electronic properties of topological insulators (TI) such as Bi2Te3, Bi2Se3, and Sb2Te3. We demonstrate that basal twins and defects affect the local band structure of the TI thin films. However, it’s most important feature remains relatively robust, i.e. the important 900 spin-momentum locking of the surface states.
Finally, we study MgV2O4 as a promising and chemical material for spintronics applications, due to its excellent lattice matching with MgO. We show that the ferromagnetic (FM) phase of this material is half-metallic, and its half-metallicity is preserved even after interfacing with MgO, as we validate through their heterostructure calculations. Interestingly, we also show that the FM phase of spinel compound MgV2O4 host three-dimensional flat band (FB) right near the Fermi level, consequently yielding a large…
Subjects/Keywords: First-principles; semiconductor heterostructures
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APA (6th Edition):
Ghasemi Azadani, J. (2020). First-Principles Studies of Two-dimensional Semiconductor Heterostructures and Magnetic Materials. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/218718
Chicago Manual of Style (16th Edition):
Ghasemi Azadani, Javad. “First-Principles Studies of Two-dimensional Semiconductor Heterostructures and Magnetic Materials.” 2020. Doctoral Dissertation, University of Minnesota. Accessed April 10, 2021.
http://hdl.handle.net/11299/218718.
MLA Handbook (7th Edition):
Ghasemi Azadani, Javad. “First-Principles Studies of Two-dimensional Semiconductor Heterostructures and Magnetic Materials.” 2020. Web. 10 Apr 2021.
Vancouver:
Ghasemi Azadani J. First-Principles Studies of Two-dimensional Semiconductor Heterostructures and Magnetic Materials. [Internet] [Doctoral dissertation]. University of Minnesota; 2020. [cited 2021 Apr 10].
Available from: http://hdl.handle.net/11299/218718.
Council of Science Editors:
Ghasemi Azadani J. First-Principles Studies of Two-dimensional Semiconductor Heterostructures and Magnetic Materials. [Doctoral Dissertation]. University of Minnesota; 2020. Available from: http://hdl.handle.net/11299/218718
9.
Yonamine, Anne Hitomi [UNESP].
Estudo da interação entre camadas de super-redes supercondutor/isolante/ferromagneto.
Degree: 2014, Universidade Estadual Paulista (UNESP)
URL: http://hdl.handle.net/11449/110891
► Made available in DSpace on 2014-12-02T11:16:42Z (GMT). No. of bitstreams: 0 Previous issue date: 2014-05-29Bitstream added on 2014-12-02T11:20:59Z : No. of bitstreams: 1 000795868.pdf: 4956316…
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▼ Made available in DSpace on 2014-12-02T11:16:42Z (GMT). No. of bitstreams: 0 Previous issue date: 2014-05-29Bitstream added on 2014-12-02T11:20:59Z : No. of bitstreams: 1 000795868.pdf: 4956316 bytes, checksum: b119bd205d170de63c73fc175a957677 (MD5)
O supercondutor (SC) YBa2Cu3O7 (YBCO) foi descoberto em 1986, e desde então tem sido amplamente estudado em suas diversas formas e propriedades. Dentre suas várias características, sua alta temperatura crítica é uma das mais importantes na ciência e na tecnologia. Atualmente existem vários dispositivos baseados no YBCO. As heteroestruturas do tipo SC/FM, onde FM representa uma camada ferromagnética, criadas nas últimas décadas, constituem uma das mais interessantes formas de aplicação deste material. Estas são altamente promissoras para o desenvolvimento de dispositivos spintrônicos que exploram as propriedades dos spins dos elétrons. Neste trabalho o foco foi estudar os efeitos das interações entre
a camada de YBCO e a do ferromagneto La2/3Ca1/3MnO3 em super-redes intermediadas por camadas de diferentes espessuras de determinados materiais isolantes. Os materiais isolantes testados foram o SrTiO3 (STO), o CeO3 e o PrBa2Cu3O. As super-redes foram fabricadas pela técnica PLD com parâmetros optimizados. Algumas das características foram determinadas por meio de medidas de DRX, MEV, EDS, de magnetização e de transporte. Estruturalmente, as super-redes apresentaram integridade de composição e cristalinidade com crescimento preferencial na direção c. As imagens de MEV confirmaram o crescimento apitaxial das camadas, e o EDS sua composição. As medidas de magnetização mostraram o grau de qualidade e o comportamento da super-rede que resulta da interação ou desacoplamento eletrônico das camadas SC e FM quando uma camada isolante é inserida entre elas. A mesma análise foi feita nas medidas de transporte. As super-redes (YBCO20nm/ISOdl/LCMO10nm)x20 apresentaram comportamento
predominantemente supercondutor. Enquanto as super-redes (YBCO20nm/ISOdl/LCMO20nm)x20 apresentaram oscilações das temperaturas crítica e de Curie assim como magnetização e resistividade não usuais dependendo do isolante e de sua espessura...
The superconducting (SC) YBa2Cu3O7 (YBCO) was discovered in 1986, and since than it has been widely studied in its various forms and properties. Among its many features, its high critical temperature is one of the most important in science and technology fields. Currently there are several devices based on YBCO. The SC/FM heterostructures, where FM is a ferromagnetic layer, created in recent decades, is one of the most interesting ways of applying this material. These are highly promising for the development of spintronic devices exploding the properties of electron spins. In this work the focus was to study the effects of interactions between the YBCO layer and the ferromagnet La2/3Ca1/3MnO3 in superlattices mediated by layers of differente
thicknesses of certain insulating materials. The tested insulating material were SrTiO3 (STO), CeO2 and PrBa2Cu3O6. The…
Advisors/Committee Members: Universidade Estadual Paulista (UNESP), Santos, Dayse Iara dos [UNESP].
Subjects/Keywords: Heteroestruturas; Supercondutores; Materiais isolantes; Heterostructures
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APA (6th Edition):
Yonamine, A. H. [. (2014). Estudo da interação entre camadas de super-redes supercondutor/isolante/ferromagneto. (Doctoral Dissertation). Universidade Estadual Paulista (UNESP). Retrieved from http://hdl.handle.net/11449/110891
Chicago Manual of Style (16th Edition):
Yonamine, Anne Hitomi [UNESP]. “Estudo da interação entre camadas de super-redes supercondutor/isolante/ferromagneto.” 2014. Doctoral Dissertation, Universidade Estadual Paulista (UNESP). Accessed April 10, 2021.
http://hdl.handle.net/11449/110891.
MLA Handbook (7th Edition):
Yonamine, Anne Hitomi [UNESP]. “Estudo da interação entre camadas de super-redes supercondutor/isolante/ferromagneto.” 2014. Web. 10 Apr 2021.
Vancouver:
Yonamine AH[. Estudo da interação entre camadas de super-redes supercondutor/isolante/ferromagneto. [Internet] [Doctoral dissertation]. Universidade Estadual Paulista (UNESP); 2014. [cited 2021 Apr 10].
Available from: http://hdl.handle.net/11449/110891.
Council of Science Editors:
Yonamine AH[. Estudo da interação entre camadas de super-redes supercondutor/isolante/ferromagneto. [Doctoral Dissertation]. Universidade Estadual Paulista (UNESP); 2014. Available from: http://hdl.handle.net/11449/110891

University of Texas – Austin
10.
Wang, Jimi.
Building fabrication-structure-application datacubes of 2D heterostructures.
Degree: MSin Engineering, Materials Science and Engineering, 2020, University of Texas – Austin
URL: http://dx.doi.org/10.26153/tsw/11807
► Researches on graphene and other two-dimensional (2D) layered materials remain exponential growth, driven by the fundamental interests and potential applications. Isolated atomic layers are intrinsically…
(more)
▼ Researches on graphene and other two-dimensional (2D) layered materials remain exponential growth, driven by the fundamental interests and potential applications. Isolated atomic layers are intrinsically the building blocks that can be reassembled into vertically stacked
heterostructures. Those so-called van der Waals
heterostructures exhibit intriguing, unique properties that cannot be found in their single-layer counterparts. Recent deterministic placement methods have further opened up new possibilities to fabricate even more complex
heterostructures with high performance. Here, this report provides insights into the recent progress of 2D
heterostructures with an emphasis on their fabrication-structure-performance datacubes. First, we introduce a detailed description of state-of-the-art deterministic assembly and fabrication methods. We then compare different approaches, summarize their advantages and limitations, alongside the recommendations on choosing suitable techniques. Next, we will discuss the supreme electrical properties of
heterostructures and the electron transfer mechanisms that make them outstanding. Then, we present some typical examples of state-of-the-art high-performance electronic applications. Finally, the perspectives and challenges will be addressed for future developments of 2D
heterostructures.
Advisors/Committee Members: Akinwande, Deji (advisor).
Subjects/Keywords: 2D materials; Heterostructures; Datacubes
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APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
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APA (6th Edition):
Wang, J. (2020). Building fabrication-structure-application datacubes of 2D heterostructures. (Masters Thesis). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/11807
Chicago Manual of Style (16th Edition):
Wang, Jimi. “Building fabrication-structure-application datacubes of 2D heterostructures.” 2020. Masters Thesis, University of Texas – Austin. Accessed April 10, 2021.
http://dx.doi.org/10.26153/tsw/11807.
MLA Handbook (7th Edition):
Wang, Jimi. “Building fabrication-structure-application datacubes of 2D heterostructures.” 2020. Web. 10 Apr 2021.
Vancouver:
Wang J. Building fabrication-structure-application datacubes of 2D heterostructures. [Internet] [Masters thesis]. University of Texas – Austin; 2020. [cited 2021 Apr 10].
Available from: http://dx.doi.org/10.26153/tsw/11807.
Council of Science Editors:
Wang J. Building fabrication-structure-application datacubes of 2D heterostructures. [Masters Thesis]. University of Texas – Austin; 2020. Available from: http://dx.doi.org/10.26153/tsw/11807
11.
Lu, Simon.
Mode-Resolved Thermal Transport Across Semiconductor Heterostructures.
Degree: 2016, Carnegie Mellon University
URL: http://repository.cmu.edu/dissertations/708
► Thermal transport across three-dimensional Lennard-Jones superlattices, two-dimensional heterostructures of graphene and hexagonal boron nitride (hBN), and in C60 molecular crystals is studied atomistically. The first…
(more)
▼ Thermal transport across three-dimensional Lennard-Jones superlattices, two-dimensional heterostructures of graphene and hexagonal boron nitride (hBN), and in C60 molecular crystals is studied atomistically. The first two systems are studied as finite junctions placed between bulk leads, while the molecular crystal is studied as a bulk. Two computational methods are used: molecular dynamics (MD) simulations and harmonic lattice dynamics calculations in conjunction with the scattering boundary method (SBM). In Lennard-Jones superlattice junctions with a superlattice period of four atomic monolayers at low temperatures, those with mass-mismatched leads have a greater thermal conductance than those with mass-matched leads. We attribute this lead effect to interference between and the ballistic transport of emergent junction vibrational modes. The lead effect diminishes when the temperature is increased, when the superlattice period is increased, and when interfacial disorder is introduced, and is reversed in the harmonic limit. In graphene-hBN heterostructure junctions, the thermal conductance is dominated by acoustic phonon modes near the Brillouin zone center that have high group velocity, population, and transmission coefficient. Out-of-plane modes make their most significant contributions at low frequencies, whereas in-plane modes contribute across the frequency spectrum. Finite-length superlattice junctions between graphene and hBN leads have a lower thermal conductance than comparable junctions between two graphene leads due to lack of transmission in the hBN phonon band gap. The thermal conductances of bilayer systems differ by less that 10% from their single-layer counterparts on a per area basis, in contrast to the strong thermal conductivity reduction when moving to from single- to multi-layer graphene. We model C60 molecules using the polymer consistent force-field and compute the single molecule vibrational spectrum and heat capacity. In the face-center cubic C60 molecular crystal at a temperature of 300 K, we find three frequency peaks in the center-of-mass translations at 20, 30 and 38 cm1, agreeing with the average frequencies of the three acoustic branches of the frozen phonon model of the same system and suggesting that a phonon description of center-of-mass translations. We use both direct method and Green- Kubo MD simulations to predict the thermal conductivity of the molecular crystals at a temperature of 300 K. We find that the thermal conductivity of the molecular crystal is 20 to 50% lower than that of a reduced order model where only molecular center-ofmass translations are present, suggesting that molecular vibrations and rotations act as significant scattering sources for the center-of-mass phonons.
Subjects/Keywords: Heterostructures; Interfaces; Nanoscale thermal transport; Phonon transport
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APA ·
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MLA ·
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CSE |
Export
to Zotero / EndNote / Reference
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APA (6th Edition):
Lu, S. (2016). Mode-Resolved Thermal Transport Across Semiconductor Heterostructures. (Thesis). Carnegie Mellon University. Retrieved from http://repository.cmu.edu/dissertations/708
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Lu, Simon. “Mode-Resolved Thermal Transport Across Semiconductor Heterostructures.” 2016. Thesis, Carnegie Mellon University. Accessed April 10, 2021.
http://repository.cmu.edu/dissertations/708.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Lu, Simon. “Mode-Resolved Thermal Transport Across Semiconductor Heterostructures.” 2016. Web. 10 Apr 2021.
Vancouver:
Lu S. Mode-Resolved Thermal Transport Across Semiconductor Heterostructures. [Internet] [Thesis]. Carnegie Mellon University; 2016. [cited 2021 Apr 10].
Available from: http://repository.cmu.edu/dissertations/708.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Lu S. Mode-Resolved Thermal Transport Across Semiconductor Heterostructures. [Thesis]. Carnegie Mellon University; 2016. Available from: http://repository.cmu.edu/dissertations/708
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of California – Riverside
12.
Gillgren, Nathaniel.
Quantum Transport Properties of Atomically Thin Black Phosphorus.
Degree: Physics, 2017, University of California – Riverside
URL: http://www.escholarship.org/uc/item/48k9x0s3
► Since the discovery of graphene, two-dimensional (2D) van der Waals materials research has flourished, with new crystals and novel phenomena discovered at a rapid pace.…
(more)
▼ Since the discovery of graphene, two-dimensional (2D) van der Waals materials research has flourished, with new crystals and novel phenomena discovered at a rapid pace. In 2014, black phosphorus (BP) was rediscovered as a member of 2D materials, displaying high quality electronic transport with in-plane anisotropy, though the first generation of layered devices suffered from poor stability and relatively low mobility. In this thesis, we overcome these challenges by employing van der Waals assembly techniques to create BP devices sandwiched between thin hexagonal boron nitride layers. These devices are air-stable, for more than two weeks, and boast mobility up to 500 cm2V-1s-1 at room temperature and 4,000 cm2V-1s-1 at low temperature. Using two-point and four-point geometries with global and local gates, we observe Shubnikov de Haas oscillations that yield effective mass of holes ~0.25 me to 0.31 me, where me is the mass of the electron. From weak localization measurements, we obtain phase relaxation length of ~30 nm to 100 nm. Moreover, we determine mobility bottleneck and transport mechanism from temperature dependence measurements: when the device is highly hole doped, the mobility µ exhibits power law dependence on temperature T, µ ~ T0.6, suggesting that it is limited by charged impurity scattering; close to the band edge, conduction is dominated by variable range hopping, with estimated localization length ~ 1.7 nm – 30 nm. The studies presented here contributed to our understanding of electronic properties of atomically thin BP, and will help to guide future efforts in fabrication, exploring, and engineering devices based on 2D semiconductors.
Subjects/Keywords: Physics; 2D Materials; Black Phosphorus; Heterostructures
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APA ·
Chicago ·
MLA ·
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CSE |
Export
to Zotero / EndNote / Reference
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APA (6th Edition):
Gillgren, N. (2017). Quantum Transport Properties of Atomically Thin Black Phosphorus. (Thesis). University of California – Riverside. Retrieved from http://www.escholarship.org/uc/item/48k9x0s3
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Gillgren, Nathaniel. “Quantum Transport Properties of Atomically Thin Black Phosphorus.” 2017. Thesis, University of California – Riverside. Accessed April 10, 2021.
http://www.escholarship.org/uc/item/48k9x0s3.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Gillgren, Nathaniel. “Quantum Transport Properties of Atomically Thin Black Phosphorus.” 2017. Web. 10 Apr 2021.
Vancouver:
Gillgren N. Quantum Transport Properties of Atomically Thin Black Phosphorus. [Internet] [Thesis]. University of California – Riverside; 2017. [cited 2021 Apr 10].
Available from: http://www.escholarship.org/uc/item/48k9x0s3.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Gillgren N. Quantum Transport Properties of Atomically Thin Black Phosphorus. [Thesis]. University of California – Riverside; 2017. Available from: http://www.escholarship.org/uc/item/48k9x0s3
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Leiden University
13.
Piñeiros Bastidas, Jessika Maribel.
Optimization of electron beam lithography on oxide heterostructures.
Degree: 2018, Leiden University
URL: http://hdl.handle.net/1887/63092
► In this thesis we are interested in growing LaAlO3 films onto SrTiO3 substrates with an off-axis geometry radio frequency magnetron sputtering technique in order to…
(more)
▼ In this thesis we are interested in growing LaAlO3 films onto SrTiO3 substrates with an off-axis geometry radio frequency magnetron sputtering technique in order to study the properties of the Q2DES found at the interface between this two band insulators. Hall bars with an Al2O3 hard mask were patterned onto TiO2-terminated SrTiO3 substrates.
The selected lithographic process was electron beam lithography due to its high resolution. With respect to the growing of the Al2O3 hard mask two different approaches were used.
Advisors/Committee Members: Aarts, Jan (advisor).
Subjects/Keywords: e- beam lithography; oxide heterostructures; Hall bars
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to Zotero / EndNote / Reference
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APA (6th Edition):
Piñeiros Bastidas, J. M. (2018). Optimization of electron beam lithography on oxide heterostructures. (Masters Thesis). Leiden University. Retrieved from http://hdl.handle.net/1887/63092
Chicago Manual of Style (16th Edition):
Piñeiros Bastidas, Jessika Maribel. “Optimization of electron beam lithography on oxide heterostructures.” 2018. Masters Thesis, Leiden University. Accessed April 10, 2021.
http://hdl.handle.net/1887/63092.
MLA Handbook (7th Edition):
Piñeiros Bastidas, Jessika Maribel. “Optimization of electron beam lithography on oxide heterostructures.” 2018. Web. 10 Apr 2021.
Vancouver:
Piñeiros Bastidas JM. Optimization of electron beam lithography on oxide heterostructures. [Internet] [Masters thesis]. Leiden University; 2018. [cited 2021 Apr 10].
Available from: http://hdl.handle.net/1887/63092.
Council of Science Editors:
Piñeiros Bastidas JM. Optimization of electron beam lithography on oxide heterostructures. [Masters Thesis]. Leiden University; 2018. Available from: http://hdl.handle.net/1887/63092

University of Delaware
14.
Mahfouzi, Farzad.
Nonequilibrium green function approach to elastic and inelastic spin-charge transport in topological insulator-based heterostructures and magnetic tunnel junctions.
Degree: PhD, University of Delaware, Department of Physics and Astronomy, 2014, University of Delaware
URL: http://udspace.udel.edu/handle/19716/16765
► Current and future technological needs increasingly motivate the intensive scientific research of the properties of materials at the nano-scale. One of the most important domains…
(more)
▼ Current and future technological needs increasingly motivate the intensive scientific research of the properties of materials at the nano-scale. One of the most important domains in this respect at present concerns nano-electronics and its diverse applications. The great interest in this domain arises from the potential reduction of the size of the circuit components, maintaining their quality and functionality, and aiming at greater efficiency, economy, and storage characteristics for the corresponding physical devices. The aim of this thesis is to present a contribution to the analysis of the electronic charge and spin transport phenomena that occur at the quantum level in nano-structures. This thesis spans the areas of quantum transport theory through time-dependent systems, electron-boson interacting systems and systems of interest to spintronics. A common thread in the thesis is to develop the theoretical foundations and computational algorithms to numerically simulate such systems. In order to optimize the numerical calculations I resort to different techniques (such as graph theory in finding inverse of a sparse matrix, adaptive grids for integrations and programming languages ({\it e.g.,} MATLAB and C++) and distributed computing tools (MPI, CUDA). Outline of the Thesis: After giving an introduction to the topics covered in this thesis in Chapter 1, I present the theoretical foundations to the field of non-equilibrium quantum statistics in Chapter 2. The applications of this formalism and the results are covered in the subsequent chapters as follows: Spin and charge quantum pumping in time-dependent systems: Covered in Chapters 3, 4 and 5, this topics was initially motivated by experiments on measuring voltage signal from a magnetic tunnel junction (MTJ) exposed to a microwave radiation in ferromagnetic resonance (FMR) condition. In Chapter 3 we found a possible explanation for the finite voltage signal measured from a tunnel junction consisting of only a single ferromagnet (FM). I show that this could be due to the existence of Rashba spin-orbit coupling (SOC) at the interface of the FM and insulator. Assuming that the measured signals are quantum mechanical effect where a solution to the time dependent Schrodinger equation is required, I use Keldysh Green function formalism to introduce a "multi-photon" approach which takes into account the effects of time-dependent term exactly up to scatterings from a finite number of photons. We then proceed to find the corresponding Green function numerically using a recursive method which allows us to increase the size of the system significantly. We also implement other approximations such as adiabatic and rotating frame approaches and compared them with our approach. In Chapter 4, I investigate the spin and charge pumping from a precessing magnetization attached to the edge of a 2-dimensional topological insulator (2DTI). We show that, in this system a huge spin current (or voltage signal if the FM covers only one edge) can be pumped for very small cone angles of the…
Advisors/Committee Members: Nikolic, Branislav.
Subjects/Keywords: Tunneling (Physics); Heterostructures.; Magnets.; Transport theory.; Spintronics.
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Mahfouzi, F. (2014). Nonequilibrium green function approach to elastic and inelastic spin-charge transport in topological insulator-based heterostructures and magnetic tunnel junctions. (Doctoral Dissertation). University of Delaware. Retrieved from http://udspace.udel.edu/handle/19716/16765
Chicago Manual of Style (16th Edition):
Mahfouzi, Farzad. “Nonequilibrium green function approach to elastic and inelastic spin-charge transport in topological insulator-based heterostructures and magnetic tunnel junctions.” 2014. Doctoral Dissertation, University of Delaware. Accessed April 10, 2021.
http://udspace.udel.edu/handle/19716/16765.
MLA Handbook (7th Edition):
Mahfouzi, Farzad. “Nonequilibrium green function approach to elastic and inelastic spin-charge transport in topological insulator-based heterostructures and magnetic tunnel junctions.” 2014. Web. 10 Apr 2021.
Vancouver:
Mahfouzi F. Nonequilibrium green function approach to elastic and inelastic spin-charge transport in topological insulator-based heterostructures and magnetic tunnel junctions. [Internet] [Doctoral dissertation]. University of Delaware; 2014. [cited 2021 Apr 10].
Available from: http://udspace.udel.edu/handle/19716/16765.
Council of Science Editors:
Mahfouzi F. Nonequilibrium green function approach to elastic and inelastic spin-charge transport in topological insulator-based heterostructures and magnetic tunnel junctions. [Doctoral Dissertation]. University of Delaware; 2014. Available from: http://udspace.udel.edu/handle/19716/16765

Vilnius University
15.
Devenson, Jelena.
Įvairialyčių lantano manganitų sandūrų gaminimas
ir tyrimas.
Degree: Dissertation, Materials Engineering, 2009, Vilnius University
URL: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2009~D_20091008_155458-83885
;
► Disertacijoje nagrinėjamos įvairios galimybės panaudoti feromagnetinių oksidų – manganitų sluoksnius bei jų darinius naujų spintronikos prietaisų gaminimui. Šio darbo pagrindiniu tyrimo objektu pasirinktos sandūros, sudarytos…
(more)
▼ Disertacijoje nagrinėjamos įvairios
galimybės panaudoti feromagnetinių oksidų – manganitų sluoksnius
bei jų darinius naujų spintronikos prietaisų gaminimui. Šio darbo
pagrindiniu tyrimo objektu pasirinktos sandūros, sudarytos tarp
dvivalenčiais (Ca, Ba, Sr) ir keturvalenčiais (Ce) jonais legiruotų
lantano mangano oksidų plonųjų sluoksnių, o taip pat tarp manganitų
ir elektroninio laidumo SrTiO3<Nb> (STON) bei n - Si padėklų.
Darbe pateiktas išsamus minėtų manganitų sluoksnių ir jų darinių
gaminimo magnetroninio dulkinimo ir impulsinio lazerinio garinimo
būdais aprašymas. Disertacijoje pateikti plonųjų manganitų
sluoksnių, užaugintų ant skirtingų padėklų, kristalinės struktūros
bei paviršiaus kokybės tyrimo duomenys, aprašytas magnetiniu lauku
valdomų diodinių darinių formavimas, jų elektrinių bei magnetinių
savybių tyrimai, įvertinti svarbiausi atskirų manganitų sluoksnių
bei jų diodinių darinių elektrofiziniai parametrai. Atlikus
kompleksinius keturvalenčiais Ce4+ jonais legiruotų lantano
manganito sluoksnių kristalinės sandaros bei elektrinių savybių
tyrimus nustatyta, kad šie sluoksniai pasižymi ne elektroniniu,
kaip buvo skelbta anksčiau, o skyliniu elektriniu laidumu. Skylinis
junginio elektrinis laidumas paaiškintas nežymiu šalutinės CeO2
fazės ir katijonų vakansijų susidarymu auginamuose sluoksniuose.
Pateikti Ca, Ba, Sr ir Ce jonais legiruotų manganitų įvairialyčių
darinių palyginamieji tyrimai, įvertinta padėklo įtaką kristalinės
manganitų sandaros tobulumui,... [toliau žr. visą
tekstą]
In this dissertation application of the
lanthanum manganite films and their heterostructures for
fabrication of new spintronic devices is discussed. The main
subjects of this work are the junctions between lanthanum manganite
oxide thin films doped by divalent (Ca, Ba, Sr) and tetravalent
(Ce) ions as well heterojunctions formed between lanthanum
manganites and n-type SrTiO3<Nb> (STON) or n - Si substrates.
The influence of doping and substrate influence on crystalline
quality of manganite film structures, interface roughness as well
as their electrical and magnetic properties has been estimated in
this dissertation. After performing complex investigations it has
been determined that tetravalent Ce ion doped lanthanum manganite
films have not the electron but hole-type conductivity on the
contrary to that has been reported earlier. Forming of magnetic
filed dependent “manganite / (STON, n - Si)“ diode structures has
been described, comparative studies of electrical and magnetic
properties have been presented, and major electro-physical
parameters have been estimated in this work. Possible reasons of
the origin of positive and negative magnetoresistance have been
pointed out. In addition, structural stabilization problems of
BiFeO3 compound, exhibiting at the same time magnetic as well as
ferroelectric properties and possibilities of application of its
unique properties in various lanthanum manganite structures for the
development of new magnetic and electrical filed sensitive... [to
full text]
Advisors/Committee Members: Orliukas, Antanas Feliksas (Doctoral dissertation committee chair), Laurinavičius, Albertas (Doctoral dissertation committee member), Kažukauskas, Vaidotas (Doctoral dissertation committee member), Vaišnoras, Donatas Rimantas (Doctoral dissertation committee member), Jagminas, Artūras (Doctoral dissertation committee member), Sužiedėlis, Algirdas (Doctoral dissertation opponent), Šatkovskis, Eugenijus (Doctoral dissertation opponent), Vengalis, Bonifacas (Doctoral dissertation supervisor), Balevičius, Saulius (Doctoral dissertation advisor).
Subjects/Keywords: Feromagnetikai; Manganitai; Sandūros;
Ferromagnetics; Manganites;
Heterostructures
Record Details
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Devenson, J. (2009). Įvairialyčių lantano manganitų sandūrų gaminimas
ir tyrimas. (Doctoral Dissertation). Vilnius University. Retrieved from http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2009~D_20091008_155458-83885 ;
Chicago Manual of Style (16th Edition):
Devenson, Jelena. “Įvairialyčių lantano manganitų sandūrų gaminimas
ir tyrimas.” 2009. Doctoral Dissertation, Vilnius University. Accessed April 10, 2021.
http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2009~D_20091008_155458-83885 ;.
MLA Handbook (7th Edition):
Devenson, Jelena. “Įvairialyčių lantano manganitų sandūrų gaminimas
ir tyrimas.” 2009. Web. 10 Apr 2021.
Vancouver:
Devenson J. Įvairialyčių lantano manganitų sandūrų gaminimas
ir tyrimas. [Internet] [Doctoral dissertation]. Vilnius University; 2009. [cited 2021 Apr 10].
Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2009~D_20091008_155458-83885 ;.
Council of Science Editors:
Devenson J. Įvairialyčių lantano manganitų sandūrų gaminimas
ir tyrimas. [Doctoral Dissertation]. Vilnius University; 2009. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2009~D_20091008_155458-83885 ;

Vilnius University
16.
Devenson, Jelena.
Fabrication and investigation of heterostructures
based on lanthanum manganites.
Degree: PhD, Materials Engineering, 2009, Vilnius University
URL: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2009~D_20091008_155508-20318
;
► In this dissertation application of the lanthanum manganite films and their heterostructures for fabrication of new spintronic devices is discussed. The main subjects of this…
(more)
▼ In this dissertation application of the
lanthanum manganite films and their heterostructures for
fabrication of new spintronic devices is discussed. The main
subjects of this work are the junctions between lanthanum manganite
oxide thin films doped by divalent (Ca, Ba, Sr) and tetravalent
(Ce) ions as well heterojunctions formed between lanthanum
manganites and n-type SrTiO3<Nb> (STON) or n - Si substrates.
The influence of doping and substrate influence on crystalline
quality of manganite film structures, interface roughness as well
as their electrical and magnetic properties has been estimated in
this dissertation. After performing complex investigations it has
been determined that tetravalent Ce ion doped lanthanum manganite
films have not the electron but hole-type conductivity on the
contrary to that has been reported earlier. Forming of magnetic
filed dependent “manganite / (STON, n - Si)“ diode structures has
been described, comparative studies of electrical and magnetic
properties have been presented, and major electro-physical
parameters have been estimated in this work. Possible reasons of
the origin of positive and negative magnetoresistance have been
pointed out. In addition, structural stabilization problems of
BiFeO3 compound, exhibiting at the same time magnetic as well as
ferroelectric properties and possibilities of application of its
unique properties in various lanthanum manganite structures for the
development of new magnetic and electrical filed sensitive... [to
full text]
Disertacijoje nagrinėjamos įvairios
galimybės panaudoti feromagnetinių oksidų – manganitų sluoksnius
bei jų darinius naujų spintronikos prietaisų gaminimui. Šio darbo
pagrindiniu tyrimo objektu pasirinktos sandūros, sudarytos tarp
dvivalenčiais (Ca, Ba, Sr) ir keturvalenčiais (Ce) jonais legiruotų
lantano mangano oksidų plonųjų sluoksnių, o taip pat tarp manganitų
ir elektroninio laidumo SrTiO3<Nb> (STON) bei n - Si padėklų.
Darbe pateiktas išsamus minėtų manganitų sluoksnių ir jų darinių
gaminimo magnetroninio dulkinimo ir impulsinio lazerinio garinimo
būdais aprašymas. Disertacijoje pateikti plonųjų manganitų
sluoksnių, užaugintų ant skirtingų padėklų, kristalinės struktūros
bei paviršiaus kokybės tyrimo duomenys, aprašytas magnetiniu lauku
valdomų diodinių darinių formavimas, jų elektrinių bei magnetinių
savybių tyrimai, įvertinti svarbiausi atskirų manganitų sluoksnių
bei jų diodinių darinių elektrofiziniai parametrai. Atlikus
kompleksinius keturvalenčiais Ce4+ jonais legiruotų lantano
manganito sluoksnių kristalinės sandaros bei elektrinių savybių
tyrimus nustatyta, kad šie sluoksniai pasižymi ne elektroniniu,
kaip buvo skelbta anksčiau, o skyliniu elektriniu laidumu. Skylinis
junginio elektrinis laidumas paaiškintas nežymiu šalutinės CeO2
fazės ir katijonų vakansijų susidarymu auginamuose sluoksniuose.
Pateikti Ca, Ba, Sr ir Ce jonais legiruotų manganitų įvairialyčių
darinių palyginamieji tyrimai, įvertinta padėklo įtaką kristalinės
manganitų sandaros tobulumui,... [toliau žr. visą
tekstą]
Advisors/Committee Members: Orliukas, Antanas Feliksas (Doctoral dissertation committee chair), Laurinavičius, Albertas (Doctoral dissertation committee member), Kažukauskas, Vaidotas (Doctoral dissertation committee member), Vaišnoras, Donatas Rimantas (Doctoral dissertation committee member), Jagminas, Artūras (Doctoral dissertation committee member), Sužiedėlis, Algirdas (Doctoral dissertation opponent), Šatkovskis, Eugenijus (Doctoral dissertation opponent), Vengalis, Bonifacas (Doctoral dissertation supervisor), Balevičius, Saulius (Doctoral dissertation advisor).
Subjects/Keywords: Ferromagnets; Manganites;
Heterostructures;
Feromagnetikai; Manganitai; Sandūros
Record Details
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Record Details
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Devenson, J. (2009). Fabrication and investigation of heterostructures
based on lanthanum manganites. (Doctoral Dissertation). Vilnius University. Retrieved from http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2009~D_20091008_155508-20318 ;
Chicago Manual of Style (16th Edition):
Devenson, Jelena. “Fabrication and investigation of heterostructures
based on lanthanum manganites.” 2009. Doctoral Dissertation, Vilnius University. Accessed April 10, 2021.
http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2009~D_20091008_155508-20318 ;.
MLA Handbook (7th Edition):
Devenson, Jelena. “Fabrication and investigation of heterostructures
based on lanthanum manganites.” 2009. Web. 10 Apr 2021.
Vancouver:
Devenson J. Fabrication and investigation of heterostructures
based on lanthanum manganites. [Internet] [Doctoral dissertation]. Vilnius University; 2009. [cited 2021 Apr 10].
Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2009~D_20091008_155508-20318 ;.
Council of Science Editors:
Devenson J. Fabrication and investigation of heterostructures
based on lanthanum manganites. [Doctoral Dissertation]. Vilnius University; 2009. Available from: http://vddb.laba.lt/obj/LT-eLABa-0001:E.02~2009~D_20091008_155508-20318 ;

University of Connecticut
17.
Rago, Paul.
Dynamical X-Ray Diffraction from Arbitrary Semiconductor Heterostructures Containing Dislocations.
Degree: MS, Electrical Engineering, 2014, University of Connecticut
URL: https://opencommons.uconn.edu/gs_theses/707
► High-resolution x-ray diffraction is a valuable non-destructive tool for the structural characterization of semiconductor heterostructures, and measured diffraction profiles contain information on the depth…
(more)
▼ High-resolution x-ray diffraction is a valuable non-destructive tool for the structural characterization of semiconductor
heterostructures, and measured diffraction profiles contain information on the depth profiles of strain, composition, and defect densities in device structures. Much of this information goes untapped because the lack of phase information prevents direct inversion of the diffraction profile. A common practice is to use dynamical simulations in conjunction with a curve-fitting procedure to extract the profiles of strain and composition in the depth of the material. Prior to this work, the dynamical simulations have been based on perfect, dislocation-free laminar crystals, and this renders the analysis inapplicable to many real structures which contain dislocation densities greater than about 10
6 cm
-2. In this work we present two novel dynamical models for Bragg x-ray diffraction in semiconductor crystals with arbitrary, nonuniform composition, strain, and dislocation density: the Phase Invariant Model for Dynamical Diffraction (PIDDM) and the Mosaic Crystal Model for Dynamical Diffraction (MCDDM), which improves upon the former with greater accuracy and better computation times. The framework for dynamical diffraction calculations is based on the Takagi-Taupin equation, but modified for distorted crystals by accounting for the angular and strain broadening introduced to the lattice by the presence of dislocations.
In this thesis we cover dynamical diffraction from perfect crystals then provide a description of both PIDDM and MCDDM models. We present results for each of these using the Si
1-xGe
x / Si (001), ZnS
ySe
1-y / GaAs (001), and In
xGa
1-xAs / GaAs (001) material systems in multilayer, superlattice, step-graded, and linearly-graded
heterostructures. We also compare the MCDDM to experimental measurements of an In
xAl
1-xAs / GaAs (001) metamorphic device structure. Lastly we provide a comparison of the two models with In
xGa
1-xAs
heterostructures. We show that these two models for defected crystals extend the usefulness of the x-ray diffraction characterization method and should in principle allow depth profiling of dislocation densities in arbitrary
heterostructures.
Advisors/Committee Members: Rajeev Bansal, Faquir Jain, John E. Ayers.
Subjects/Keywords: dynamical x-ray diffraction; dislocations; heterostructures
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Rago, P. (2014). Dynamical X-Ray Diffraction from Arbitrary Semiconductor Heterostructures Containing Dislocations. (Masters Thesis). University of Connecticut. Retrieved from https://opencommons.uconn.edu/gs_theses/707
Chicago Manual of Style (16th Edition):
Rago, Paul. “Dynamical X-Ray Diffraction from Arbitrary Semiconductor Heterostructures Containing Dislocations.” 2014. Masters Thesis, University of Connecticut. Accessed April 10, 2021.
https://opencommons.uconn.edu/gs_theses/707.
MLA Handbook (7th Edition):
Rago, Paul. “Dynamical X-Ray Diffraction from Arbitrary Semiconductor Heterostructures Containing Dislocations.” 2014. Web. 10 Apr 2021.
Vancouver:
Rago P. Dynamical X-Ray Diffraction from Arbitrary Semiconductor Heterostructures Containing Dislocations. [Internet] [Masters thesis]. University of Connecticut; 2014. [cited 2021 Apr 10].
Available from: https://opencommons.uconn.edu/gs_theses/707.
Council of Science Editors:
Rago P. Dynamical X-Ray Diffraction from Arbitrary Semiconductor Heterostructures Containing Dislocations. [Masters Thesis]. University of Connecticut; 2014. Available from: https://opencommons.uconn.edu/gs_theses/707

Hong Kong University of Science and Technology
18.
Ye, Weiguang PHYS.
High quality monolayer graphene heterostructures prepared by a dry transfer technique.
Degree: 2015, Hong Kong University of Science and Technology
URL: http://repository.ust.hk/ir/Record/1783.1-92282
;
https://doi.org/10.14711/thesis-b1514975
;
http://repository.ust.hk/ir/bitstream/1783.1-92282/1/th_redirect.html
► Graphene is a distinct 2D material which attracts scientists since its discovery in 2004. However, the presence of extrinsic disorders has been a major problem…
(more)
▼ Graphene is a distinct 2D material which attracts scientists since its discovery in 2004. However, the presence of extrinsic disorders has been a major problem for fabricating high quality graphene devices. In this thesis, a dry transfer technique was developed to fabricate high quality monolayer graphene heterostructures (BN/Graphene/BN) and their electronic properties were subsequently investigated. Unique methods and structural designs were employed to protect graphene from direct contact with solvent and polymers, which are contaminants commonly introduced using traditional transfer techniques. Besides, preparation and identification procedures were optimized to shorten the fabrication period. Device structures of FETs and QC capacitances on graphite were designed and fabricated to test the reliability of these techniques. The ballistic transport verified the effectiveness of these methods (carrier mobility reached 195,000 cm2V-1s-1 and 500,000 cm2V-1s-1 at 300K and 2K, respectively). Landau Level splitting in Quantum Hall Effect phenomenon was observed in both FET and quantum capacitance devices at low magnetic field. Furthermore, negative compressibility in quantum capacitance was detected. Collectively, the pick-up dry transfer technique and the sandwich configuration are reliable and effective to fabricate high quality graphene devices. The ultra-clean system offers an opportunity to unravel physical phenomena, which were previously interfered by impurities and defects. With the successfulness in fabricating high quality graphene, the general use of the dry transfer technique in manufacturing potential electronic devices can be expected.
Subjects/Keywords: Graphene
; Design and construction
; Electric properties
; Heterostructures
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Record Details
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Ye, W. P. (2015). High quality monolayer graphene heterostructures prepared by a dry transfer technique. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-92282 ; https://doi.org/10.14711/thesis-b1514975 ; http://repository.ust.hk/ir/bitstream/1783.1-92282/1/th_redirect.html
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Ye, Weiguang PHYS. “High quality monolayer graphene heterostructures prepared by a dry transfer technique.” 2015. Thesis, Hong Kong University of Science and Technology. Accessed April 10, 2021.
http://repository.ust.hk/ir/Record/1783.1-92282 ; https://doi.org/10.14711/thesis-b1514975 ; http://repository.ust.hk/ir/bitstream/1783.1-92282/1/th_redirect.html.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Ye, Weiguang PHYS. “High quality monolayer graphene heterostructures prepared by a dry transfer technique.” 2015. Web. 10 Apr 2021.
Vancouver:
Ye WP. High quality monolayer graphene heterostructures prepared by a dry transfer technique. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2015. [cited 2021 Apr 10].
Available from: http://repository.ust.hk/ir/Record/1783.1-92282 ; https://doi.org/10.14711/thesis-b1514975 ; http://repository.ust.hk/ir/bitstream/1783.1-92282/1/th_redirect.html.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Ye WP. High quality monolayer graphene heterostructures prepared by a dry transfer technique. [Thesis]. Hong Kong University of Science and Technology; 2015. Available from: http://repository.ust.hk/ir/Record/1783.1-92282 ; https://doi.org/10.14711/thesis-b1514975 ; http://repository.ust.hk/ir/bitstream/1783.1-92282/1/th_redirect.html
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Hong Kong University of Science and Technology
19.
Chan, Cheung.
Out of plane screening and dipolar interaction in heterostructures.
Degree: 2009, Hong Kong University of Science and Technology
URL: http://repository.ust.hk/ir/Record/1783.1-6225
;
https://doi.org/10.14711/thesis-b1070445
;
http://repository.ust.hk/ir/bitstream/1783.1-6225/1/th_redirect.html
► We study the effect of out-of-plane screening (OPS) in an example of heterostructures, symmetric electron-hole bilayer (EHBL). OPS is expected in metal-insulator or metal-semiconductor interfaces…
(more)
▼ We study the effect of out-of-plane screening (OPS) in an example of heterostructures, symmetric electron-hole bilayer (EHBL). OPS is expected in metal-insulator or metal-semiconductor interfaces while this aspect has been overlooked by previous studies. We consider two types of EHBL systems, which are strongly correlated and as usual electron-hole liquid. The corresponding zero-temperature phase diagrams are obtained with mean field treatment. The modification of plasmon excitations in electron-hole liquid under OPS is also considered. We found that OPS does have effects on properties of layered heterostructures while its effects mainly arise in low density and long wavelength regime.
Subjects/Keywords: Heterostructures
; Interface circuits
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Chan, C. (2009). Out of plane screening and dipolar interaction in heterostructures. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-6225 ; https://doi.org/10.14711/thesis-b1070445 ; http://repository.ust.hk/ir/bitstream/1783.1-6225/1/th_redirect.html
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Chan, Cheung. “Out of plane screening and dipolar interaction in heterostructures.” 2009. Thesis, Hong Kong University of Science and Technology. Accessed April 10, 2021.
http://repository.ust.hk/ir/Record/1783.1-6225 ; https://doi.org/10.14711/thesis-b1070445 ; http://repository.ust.hk/ir/bitstream/1783.1-6225/1/th_redirect.html.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Chan, Cheung. “Out of plane screening and dipolar interaction in heterostructures.” 2009. Web. 10 Apr 2021.
Vancouver:
Chan C. Out of plane screening and dipolar interaction in heterostructures. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2009. [cited 2021 Apr 10].
Available from: http://repository.ust.hk/ir/Record/1783.1-6225 ; https://doi.org/10.14711/thesis-b1070445 ; http://repository.ust.hk/ir/bitstream/1783.1-6225/1/th_redirect.html.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Chan C. Out of plane screening and dipolar interaction in heterostructures. [Thesis]. Hong Kong University of Science and Technology; 2009. Available from: http://repository.ust.hk/ir/Record/1783.1-6225 ; https://doi.org/10.14711/thesis-b1070445 ; http://repository.ust.hk/ir/bitstream/1783.1-6225/1/th_redirect.html
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of South Florida
20.
Le, Nam B.
Structure-Interaction Effects In Novel Nanostructured Materials.
Degree: 2016, University of South Florida
URL: https://scholarcommons.usf.edu/etd/6296
► Recent advances in experimental and computational methods have opened up new directions in graphene fundamental studies. In addition to understanding the basic properties of this…
(more)
▼ Recent advances in experimental and computational methods have opened up new directions in graphene fundamental studies. In addition to understanding the basic properties of this material and its quasi-one dimensional structures, significant efforts are devoted to describing their long ranged dispersive interactions. Other two-dimensional materials, such as silicene, germanene, and transition metal dichalcogenides, are also being investigated aiming at finding complementary to graphene systems with other "wonder" properties. The focus of this work is to utilize first principles simulations methods to build our basic knowledge of structure-interaction relations in two-dimensional materials and design their properties. In particular, mechanical folding and extended defects in zigzag and armchair graphene nanoribbons can be used to modulate their electronic and spin polarization characteristics and achieve different stacking patterns. Our simulations concerning zigzag silicene nanoribbons show width-dependent antiferromagnetic-ferromagnetic transitions unlike the case of zigzag graphene nanoribbons, which are always antiferromagnetic. Heterostructures, build by stacking graphene, silicene, and MoS2, are also investigated. It is found that hybridization alters the electronic properties of the individual layers and new flexural and breathing phonon modes display unique behaviors in the heterostructure compositions. Anchored to SiC substrate graphene nanoribbons are also proposed as possible systems to be used in graphene electronics. Our findings are of importance not only for fundamental science, but they could also be used for future experimental developments.
Subjects/Keywords: Graphene; Silicene; nanoribbons; heterostructures; anchored ribbons; Physics
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Le, N. B. (2016). Structure-Interaction Effects In Novel Nanostructured Materials. (Thesis). University of South Florida. Retrieved from https://scholarcommons.usf.edu/etd/6296
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Le, Nam B. “Structure-Interaction Effects In Novel Nanostructured Materials.” 2016. Thesis, University of South Florida. Accessed April 10, 2021.
https://scholarcommons.usf.edu/etd/6296.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Le, Nam B. “Structure-Interaction Effects In Novel Nanostructured Materials.” 2016. Web. 10 Apr 2021.
Vancouver:
Le NB. Structure-Interaction Effects In Novel Nanostructured Materials. [Internet] [Thesis]. University of South Florida; 2016. [cited 2021 Apr 10].
Available from: https://scholarcommons.usf.edu/etd/6296.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Le NB. Structure-Interaction Effects In Novel Nanostructured Materials. [Thesis]. University of South Florida; 2016. Available from: https://scholarcommons.usf.edu/etd/6296
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Kansas
21.
Bellus, Matthew Zetah.
Charge and Energy Transfer in Different Types of Two-Dimensional Heterostructures.
Degree: PhD, Physics & Astronomy, 2018, University of Kansas
URL: http://hdl.handle.net/1808/27808
► In the last decade or so, layered materials have attracted significant attention due to their promise for tailoring electronic properties at an atomic level. Individually,…
(more)
▼ In the last decade or so, layered materials have attracted significant attention due to their promise for tailoring electronic properties at an atomic level. Individually, these materials have exhibited strong attributes, relevant for both electronic and optoelectronic applications. However, the real world implementation of semiconducting materials is often derived from the junctions they form with other semiconductors. Thus, much of the interest in 2D materials arises from exploiting their ability to form low dimensional
heterostructures. From a structural stand point, there are two ways these
heterostructures can be formed, either vertically or laterally. The more common, vertical
heterostructures, are intriguing due to their van der Waals adhesion, which eliminates many of the constraints attributed to lattice matching between materials. Lateral
heterostructures, on the other hand, provide the unique opportunity to form in-plane junctions within a 2D sheet, creating novel 1D interfaces. To better understand these various
heterostructures, this dissertation aims to explore photocarrier dynamics, using ultrafast laser spectroscopy techniques, in several types of structures yet to be extensively studied. First, charge and energy transfer mechanisms in vertical
heterostructures formed between various transition metal dichalcogenide monolayers are studied, highlighting the addition of type-I band alignment to the discussion. Next, the extent to which materials can interact electronically through van der Waals adhesion is explored at the interface between amorphous and crystalline layers. From there, the focus shifts slightly to carrier dynamics across lateral junctions formed within monolayer sheets of transition metal dichalcogenides. This includes a discussion on lateral
heterostructures, formed between different materials, as well as homostructures where an electronic junction can be induced in a single material. All of these studies will provide a unique overview on the possible directions and applications for which two dimensional materials can be facilitated. This dissertation includes previously published authored material.
Advisors/Committee Members: Zhao, Hui (advisor), Wu, Judy (cmtemember), Han, Siyuan (cmtemember), Chan, Wai-Lun (cmtemember), Hui, Rongqing (cmtemember).
Subjects/Keywords: Physics; 2D Heterostructures; Transition Metal Dichalcogenides
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Bellus, M. Z. (2018). Charge and Energy Transfer in Different Types of Two-Dimensional Heterostructures. (Doctoral Dissertation). University of Kansas. Retrieved from http://hdl.handle.net/1808/27808
Chicago Manual of Style (16th Edition):
Bellus, Matthew Zetah. “Charge and Energy Transfer in Different Types of Two-Dimensional Heterostructures.” 2018. Doctoral Dissertation, University of Kansas. Accessed April 10, 2021.
http://hdl.handle.net/1808/27808.
MLA Handbook (7th Edition):
Bellus, Matthew Zetah. “Charge and Energy Transfer in Different Types of Two-Dimensional Heterostructures.” 2018. Web. 10 Apr 2021.
Vancouver:
Bellus MZ. Charge and Energy Transfer in Different Types of Two-Dimensional Heterostructures. [Internet] [Doctoral dissertation]. University of Kansas; 2018. [cited 2021 Apr 10].
Available from: http://hdl.handle.net/1808/27808.
Council of Science Editors:
Bellus MZ. Charge and Energy Transfer in Different Types of Two-Dimensional Heterostructures. [Doctoral Dissertation]. University of Kansas; 2018. Available from: http://hdl.handle.net/1808/27808

University of New South Wales
22.
Chen, Jason Chao-Hsuan.
Electronic transport of low dimensional holes in induced p-type GaAs devices.
Degree: Physics, 2012, University of New South Wales
URL: http://handle.unsw.edu.au/1959.4/52388
;
https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11061/SOURCE1?view=true
► In this thesis we study low dimensional hole systems fabricated on GaAs/AlGaAsheterostructures without any modulation dopants. The electrical transports of holes in twodimensions (2D), one…
(more)
▼ In this thesis we study low dimensional hole systems fabricated on GaAs/AlGaAsheterostructures without any modulation dopants. The electrical transports of holes in twodimensions (2D), one dimension (1D) and zero dimension (0D) are studied. Two types of fieldeffect transistors are fabricated and studied. The first type is a semiconductor insulatorsemiconductor field effect transistor (SISFET) in which 1D hole wires and a hole quantum dotare studied. The second type is a metal insulator semiconductor field effect transistor(MISFET) in which devices with the ability to switch the type of charge carriers in theconduction channel between electrons and holes are fabricated (ambipolar devices).The 1D hole wires are fabricated on the crystal plane of (100). The 1D hole wires showstrong Zeeman splitting when the in-plane magnetic field is applied parallel to the 1D wires,and very small Zeeman splitting when the in-plane magnetic field is applied perpendicular tothe 1D wires, regardless of the crystallographic orientation ([ 011] or [011 ̅] ). This effect isdifferent compared to 1D hole wires fabricated on the crystal plane of (311)A, where there isan interplay between anisotropies due to the low crystal symmetry and 1D confinementresulting in different Zeeman splitting measured in wires oriented in differentcrystallographic orientations.We then move onto the fabrication and study of a single hole transistor in a GaAs/AlGaAsheterostructure. The Coulomb blockade oscillations resulting from single hole chargestunnelling on/off the quantum dot are observed and we also measure the charging energy ofthe quantum dot with source-drain bias spectroscopy. The quantum dot is found to be morestable and has less electrical noise compared to a single electron transistor fabricated onsilicon, and compares favourably with an electron quantum dot fabricated on a GaAs/AlGaAsheterostructure with modulation dopants.We also fabricated the first ambipolar devices on a GaAs/AlGaAs heterostructure with theMISFET design and characterised these devices at low temperatures. Firstly the chargetransport of electrons and holes are compared directly in a 2D ambipolar device bymeasuring the density dependence of the carrier mobility. It is observed that the electronmobility can be modelled with charge scattering theories taking into account backgroundimpurity scattering, interface roughness scattering and screening. However, when the samefitting parameters are used to model the hole mobility by switching the effective mass ofelectrons to holes, the theory cannot fit the experimental hole mobility. Several possibilitiesfor the deviation of the calculations are discussed but further experimental and theoreticalworks need to be conducted in order to determine the exact cause for this deviation.Finally we characterised ambipolar 1D wires where both electrons and holes can bemeasured. Ballistic transport of both types of charge carriers is observed and we comparethe 1D subband spacings of electrons to holes.
Advisors/Committee Members: Hamilton, Alex, Physics, Faculty of Science, UNSW, Micolich, Adam, Physics, Faculty of Science, UNSW.
Subjects/Keywords: Holes; Condensed matter physics; GaAs/AlGaAs heterostructures
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Chen, J. C. (2012). Electronic transport of low dimensional holes in induced p-type GaAs devices. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/52388 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11061/SOURCE1?view=true
Chicago Manual of Style (16th Edition):
Chen, Jason Chao-Hsuan. “Electronic transport of low dimensional holes in induced p-type GaAs devices.” 2012. Doctoral Dissertation, University of New South Wales. Accessed April 10, 2021.
http://handle.unsw.edu.au/1959.4/52388 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11061/SOURCE1?view=true.
MLA Handbook (7th Edition):
Chen, Jason Chao-Hsuan. “Electronic transport of low dimensional holes in induced p-type GaAs devices.” 2012. Web. 10 Apr 2021.
Vancouver:
Chen JC. Electronic transport of low dimensional holes in induced p-type GaAs devices. [Internet] [Doctoral dissertation]. University of New South Wales; 2012. [cited 2021 Apr 10].
Available from: http://handle.unsw.edu.au/1959.4/52388 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11061/SOURCE1?view=true.
Council of Science Editors:
Chen JC. Electronic transport of low dimensional holes in induced p-type GaAs devices. [Doctoral Dissertation]. University of New South Wales; 2012. Available from: http://handle.unsw.edu.au/1959.4/52388 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11061/SOURCE1?view=true

Indian Institute of Science
23.
Naika, K Gopalakrishna.
Luminescence Studies On Some Technologically Important III-V Ternary Pseudomorphic Heterostructures.
Degree: PhD, Faculty of Science, 2011, Indian Institute of Science
URL: http://etd.iisc.ac.in/handle/2005/1542
Subjects/Keywords: Quantum Well Heterostructures; Luminescence; Pseudomorphic Heterostructures; Quantum Wells; Electrodynamics
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Naika, K. G. (2011). Luminescence Studies On Some Technologically Important III-V Ternary Pseudomorphic Heterostructures. (Doctoral Dissertation). Indian Institute of Science. Retrieved from http://etd.iisc.ac.in/handle/2005/1542
Chicago Manual of Style (16th Edition):
Naika, K Gopalakrishna. “Luminescence Studies On Some Technologically Important III-V Ternary Pseudomorphic Heterostructures.” 2011. Doctoral Dissertation, Indian Institute of Science. Accessed April 10, 2021.
http://etd.iisc.ac.in/handle/2005/1542.
MLA Handbook (7th Edition):
Naika, K Gopalakrishna. “Luminescence Studies On Some Technologically Important III-V Ternary Pseudomorphic Heterostructures.” 2011. Web. 10 Apr 2021.
Vancouver:
Naika KG. Luminescence Studies On Some Technologically Important III-V Ternary Pseudomorphic Heterostructures. [Internet] [Doctoral dissertation]. Indian Institute of Science; 2011. [cited 2021 Apr 10].
Available from: http://etd.iisc.ac.in/handle/2005/1542.
Council of Science Editors:
Naika KG. Luminescence Studies On Some Technologically Important III-V Ternary Pseudomorphic Heterostructures. [Doctoral Dissertation]. Indian Institute of Science; 2011. Available from: http://etd.iisc.ac.in/handle/2005/1542

Universidade do Rio Grande do Norte
24.
Medeiros, Subênia Karine de.
Sistemas Nanoestruturados: Heteroestruturas Quasi-Periódicas de Nitretos e Cálculos Ab initio em Polimorfos
CaCO3
.
Degree: 2007, Universidade do Rio Grande do Norte
URL: http://repositorio.ufrn.br/handle/123456789/16649
► The physical properties and the excitations spectrum in oxides and semiconductors materials are presented in this work, whose the first part presents a study on…
(more)
▼ The physical properties and the excitations spectrum in oxides and semiconductors materials are presented in this work, whose the first part presents a study on the confinement of optical phonons in artificial systems based on III-V nitrides, grown in periodic and quasiperiodic forms. The second part of this work describes the Ab initio calculations which were carried out to obtain the optoeletronic properties of Calcium Oxide (CaO) and Calcium Carbonate (CaCO3) crystals. For periodic and quasi-periodic superlattices, we present some dynamical properties related to confined optical phonons (bulk and surface), obtained through simple theories, such as the dielectric continuous model, and using techniques such as the transfer-matrix method. The localization character of confined optical phonon modes, the magnitude of the bands in the spectrum and the power laws of these structures are presented as functions of the generation number of sequence.
The ab initio calculations have been carried out using the CASTEP software (Cambridge Total Sequential Energy Package), and they were based on ultrasoft-like pseudopotentials and Density Functional Theory (DFT). Two di®erent geometry optimizations have been e®ectuated for CaO crystals and CaCO3 polymorphs, according to LDA (local density approximation) and GGA (generalized gradient approximation) approaches, determining several properties, e. g. lattice parameters, bond length, electrons density, energy band structures, electrons density of states, e®ective masses and optical properties, such as dielectric constant, absorption, re°ectivity, conductivity and refractive index. Those results were employed to investigate the confinement of excitons in spherical
[email protected] and
[email protected] quantum dots and in calcium carbonate nanoparticles, and were also
employed in investigations of the photoluminescence spectra of CaCO3 crystal
Advisors/Committee Members: Albuquerque, Eudenilson Lins de (advisor), CPF:05011124487 (advisor), http://buscatextual.cnpq.br/buscatextual/visualizacv.do?id=K4783172H5 (advisor), Freire, Valder Nogueira (advisor), CPF:12105473334 (advisor), http://lattes.cnpq.br/8647922327100953 (advisor).
Subjects/Keywords: Heteroestruturas;
Hidretos;
Ab initio;
Nanoescalas;
Heterostructures;
Hydrides;
Ab initio;
Nanoscales
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Medeiros, S. K. d. (2007). Sistemas Nanoestruturados: Heteroestruturas Quasi-Periódicas de Nitretos e Cálculos Ab initio em Polimorfos
CaCO3
. (Thesis). Universidade do Rio Grande do Norte. Retrieved from http://repositorio.ufrn.br/handle/123456789/16649
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Medeiros, Subênia Karine de. “Sistemas Nanoestruturados: Heteroestruturas Quasi-Periódicas de Nitretos e Cálculos Ab initio em Polimorfos
CaCO3
.” 2007. Thesis, Universidade do Rio Grande do Norte. Accessed April 10, 2021.
http://repositorio.ufrn.br/handle/123456789/16649.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Medeiros, Subênia Karine de. “Sistemas Nanoestruturados: Heteroestruturas Quasi-Periódicas de Nitretos e Cálculos Ab initio em Polimorfos
CaCO3
.” 2007. Web. 10 Apr 2021.
Vancouver:
Medeiros SKd. Sistemas Nanoestruturados: Heteroestruturas Quasi-Periódicas de Nitretos e Cálculos Ab initio em Polimorfos
CaCO3
. [Internet] [Thesis]. Universidade do Rio Grande do Norte; 2007. [cited 2021 Apr 10].
Available from: http://repositorio.ufrn.br/handle/123456789/16649.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Medeiros SKd. Sistemas Nanoestruturados: Heteroestruturas Quasi-Periódicas de Nitretos e Cálculos Ab initio em Polimorfos
CaCO3
. [Thesis]. Universidade do Rio Grande do Norte; 2007. Available from: http://repositorio.ufrn.br/handle/123456789/16649
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
25.
Subênia Karine de Medeiros.
Sistemas Nanoestruturados: Heteroestruturas Quasi-Periódicas de Nitretos e Cálculos Ab initio em Polimorfos CaCO3.
Degree: 2007, Universidade Federal do Rio Grande do Norte
URL: http://bdtd.bczm.ufrn.br/tedesimplificado//tde_busca/arquivo.php?codArquivo=1189
► The physical properties and the excitations spectrum in oxides and semiconductors materials are presented in this work, whose the first part presents a study on…
(more)
▼ The physical properties and the excitations spectrum in oxides and semiconductors materials are presented in this work, whose the first part presents a study on the confinement of optical phonons in artificial systems based on III-V nitrides, grown in periodic and quasiperiodic forms. The second part of this work describes the Ab initio calculations which were carried out to obtain the optoeletronic properties of Calcium Oxide (CaO) and Calcium Carbonate (CaCO3) crystals. For periodic and quasi-periodic superlattices, we present some dynamical properties related to confined optical phonons (bulk and surface), obtained through simple theories, such as the dielectric continuous model, and using techniques such as the transfer-matrix method. The localization character of confined optical phonon modes, the magnitude of the bands in the spectrum and the power laws of these structures are presented as functions of the generation number of sequence. The ab initio calculations have been carried out using the CASTEP software (Cambridge Total Sequential Energy Package), and they were based on ultrasoft-like pseudopotentials and Density Functional Theory (DFT). Two dierent geometry optimizations have been eectuated for CaO crystals and CaCO3 polymorphs, according to LDA (local density approximation) and GGA (generalized gradient approximation) approaches, determining several properties, e. g. lattice parameters, bond length, electrons density, energy band structures, electrons density of states, eective masses and optical properties, such as dielectric constant, absorption, reectivity, conductivity and refractive index. Those results were employed to investigate the confinement of excitons in spherical [email protected] and [email protected] quantum dots and in calcium carbonate nanoparticles, and were also employed in investigations of the photoluminescence spectra of CaCO3 crystal
As propriedades físicas e o espectro de excitações em materiais óxidos e semicondutores são apresentados neste trabalho, composto primeiramente por um estudo sobre o confinamento de fonons ópticos em sistemas artificiais baseados em nitretos III-V, crescidos periodicamente e quasi-periodicamente. A segunda parte deste trabalho descreve cálculos de primeiros princípios realizados para a obtenção de propriedades optoeletrônicas em cristais de Óxido de Cálcio (CaO) e Carbonato de Cálcio (CaCO3). Para as super- redes periódicas e quasi-periódicas apresentamos aqui algumas propriedades dinâmicas relacionadas a fonons ópticos (de volume e de superfície) confinados obtidos através de teorias simples como o modelo do dielétrico contínuo e a utilização de técnicas como a aproximação da matriz transferência. O caráter de localização dos modos de fonons ópticos confinados, a magnitude das bandas no espectro e a lei de escalas dessas estruturas como função do número de geração das sequências substitucionais são apresentadas. Os cálculos ab initio foram realizados utilizando o software CASTEP (Cambridge Sequential Total Energy Package) baseados nos métodos de…
Advisors/Committee Members: Ewerton Wagner Caetano, Valder Nogueira Freire, Dory Hélio Aires de Lima Anselmo, Luciano Rodrigues da Silva, Eudenilson Lins de Albuquerque.
Subjects/Keywords: Ab initio; Heteroestruturas; Hidretos; Nanoescalas; FISICA; Heterostructures; Hydrides; Ab initio; Nanoscales
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Medeiros, S. K. d. (2007). Sistemas Nanoestruturados: Heteroestruturas Quasi-Periódicas de Nitretos e Cálculos Ab initio em Polimorfos CaCO3. (Thesis). Universidade Federal do Rio Grande do Norte. Retrieved from http://bdtd.bczm.ufrn.br/tedesimplificado//tde_busca/arquivo.php?codArquivo=1189
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Medeiros, Subênia Karine de. “Sistemas Nanoestruturados: Heteroestruturas Quasi-Periódicas de Nitretos e Cálculos Ab initio em Polimorfos CaCO3.” 2007. Thesis, Universidade Federal do Rio Grande do Norte. Accessed April 10, 2021.
http://bdtd.bczm.ufrn.br/tedesimplificado//tde_busca/arquivo.php?codArquivo=1189.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Medeiros, Subênia Karine de. “Sistemas Nanoestruturados: Heteroestruturas Quasi-Periódicas de Nitretos e Cálculos Ab initio em Polimorfos CaCO3.” 2007. Web. 10 Apr 2021.
Vancouver:
Medeiros SKd. Sistemas Nanoestruturados: Heteroestruturas Quasi-Periódicas de Nitretos e Cálculos Ab initio em Polimorfos CaCO3. [Internet] [Thesis]. Universidade Federal do Rio Grande do Norte; 2007. [cited 2021 Apr 10].
Available from: http://bdtd.bczm.ufrn.br/tedesimplificado//tde_busca/arquivo.php?codArquivo=1189.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Medeiros SKd. Sistemas Nanoestruturados: Heteroestruturas Quasi-Periódicas de Nitretos e Cálculos Ab initio em Polimorfos CaCO3. [Thesis]. Universidade Federal do Rio Grande do Norte; 2007. Available from: http://bdtd.bczm.ufrn.br/tedesimplificado//tde_busca/arquivo.php?codArquivo=1189
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

UCLA
26.
Xiao, Zhuyun.
Controlling magnetization and strain at the micron-scale and below in strain-mediated composite multiferroic devices.
Degree: Electrical Engineering, 2017, UCLA
URL: http://www.escholarship.org/uc/item/679579xn
► Strain-coupled multiferroic heterostructures provide a path to energy-efficient, voltage-controlled magnetic nanoscale devices, a region where current-based methods of magnetic control suffer from Ohmic dissipation. Magnetoelectric…
(more)
▼ Strain-coupled multiferroic heterostructures provide a path to energy-efficient, voltage-controlled magnetic nanoscale devices, a region where current-based methods of magnetic control suffer from Ohmic dissipation. Magnetoelectric coupling behavior in such composite heterostructures has thus been of substantial interest for scientific research and applications. As the dimension of the devices scale down, novel physical phenomenon emerges and thus also requires further understanding of both the magnetization and strain behavior at micro- and nanoscale. When it comes to the magnetization behavior, there has been a growing interest in highly magnetoelastic materials, such as Terfenol-D, prompting a more accurate understanding of their magnetization behavior. To address this need, we simulate the strain-induced magnetization change with two modeling methods: the commonly used unidirectional model and the recently developed bidirectional model. Unidirectional models account for magnetoelastic effects only, while bidirectional models account for both magnetoelastic and magnetostrictive effects. We found unidirectional models are on par with bidirectional models when describing the magnetic behavior in weakly magnetoelastic materials (e.g., Nickel), but the two models deviate when highly magnetoelastic materials (e.g., Terfenol-D) are introduced. These results suggest that magnetostrictive feedback is critical for modeling highly magnetoelastic materials, as opposed to weaker magnetoelastic materials, where we observe only minor differences between the two methods’ outputs. To our best knowledge, this work represents the first comparison of unidirectional and bidirectional modeling in composite multiferroic systems, demonstrating that back-coupling of magnetization to strain can inhibit formation and rotation of magnetic states, highlighting the need to revisit the assumption that unidirectional modeling always captures the necessary physics in strain-mediated multiferroics. In terms of the strain behavior, there hasn’t been a system-level work that quantifies the strain distribution as a function of the electric field at these so-called mesocales level (100 nm- 10 um), in the range of the constitutive grain size, etc. To obtain mechanical properties at such length scale, including strain information, we used synchrotron polychromatic scanning x-ray diffraction (micro-diffraction) on beamline 12.3.2 at the Advanced Light Source of the Lawrence Berkeley National Lab. With given ferromagnetic and ferroelectric components, it is the magnetoelectric coupling between the two that governs the interaction. In this work, we also demonstrate a method to enhance the coupling behavior between two existing components by interposing a polymer layer.
Subjects/Keywords: Electrical engineering; Magnetoelastic; Magnetoelectric; Multiferroic heterostructures; Strain-mediated; Terfenol-D
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Xiao, Z. (2017). Controlling magnetization and strain at the micron-scale and below in strain-mediated composite multiferroic devices. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/679579xn
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Xiao, Zhuyun. “Controlling magnetization and strain at the micron-scale and below in strain-mediated composite multiferroic devices.” 2017. Thesis, UCLA. Accessed April 10, 2021.
http://www.escholarship.org/uc/item/679579xn.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Xiao, Zhuyun. “Controlling magnetization and strain at the micron-scale and below in strain-mediated composite multiferroic devices.” 2017. Web. 10 Apr 2021.
Vancouver:
Xiao Z. Controlling magnetization and strain at the micron-scale and below in strain-mediated composite multiferroic devices. [Internet] [Thesis]. UCLA; 2017. [cited 2021 Apr 10].
Available from: http://www.escholarship.org/uc/item/679579xn.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Xiao Z. Controlling magnetization and strain at the micron-scale and below in strain-mediated composite multiferroic devices. [Thesis]. UCLA; 2017. Available from: http://www.escholarship.org/uc/item/679579xn
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Georgia Tech
27.
Pan, Chi-Ruei.
Properties of two-dimensional materials grown on metal substrates.
Degree: PhD, Physics, 2019, Georgia Tech
URL: http://hdl.handle.net/1853/62616
► Supercell models are proposed to investigate the properties of three types of heterostructures formed by two-dimensional (2D) materials grown on metal substrates, including (1) silicon…
(more)
▼ Supercell models are proposed to investigate the properties of three types of
heterostructures formed by two-dimensional (2D) materials grown on metal substrates, including (1) silicon (Si) thin films on a silver (Ag) substrate; (2) a single-layer hexagonal boron nitride (h-BN) on ruthenium (Ru) and copper (Cu) substrates; and (3) a stacked combination of lead (Pb) and Ag thin films. Coverage, orbital hybridization, and interface conditions are studied in order to tailor the electronic properties of these
heterostructures. For the first system, results show that a Si coverage beyond 2.5 ML is needed for the emergence of the nearly linear energy-momentum relation. This relation is associated with the electronic states induced by the interaction between surface Si and Ag. For the second system, results demonstrate that the nitrogen (N) orbitals can hybridize with the underlying metal orbitals, and thus the regions of the h-BN monolayer with N situated on top of a metal atom will move closer to the substrate, leading to a corrugated h-BN layer. Calculated spatially-periodic modulations of the band profile and the local work function are in agreement with the experimental results. For the third system, results illustrate that the presence of the substrate alters the boundary conditions and thus can change the phase shifts of the quantum well states at the interface. The combination of Pb and Ag films creates a joint potential well that supports combined quantum well states. These findings suggest that in our studied systems, the interaction between the 2D materials and the substrates plays an important role in determining their electronic properties.
Advisors/Committee Members: Chou, Mei-Yin (advisor), Landman, Uzi (advisor), First, Phillip N. (committee member), Mourigal, Martin (committee member), Jang, Seung Soon (committee member).
Subjects/Keywords: Two-dimensional materials; Heterostructures; Moiré patterns; Bimetallic thin films
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Pan, C. (2019). Properties of two-dimensional materials grown on metal substrates. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/62616
Chicago Manual of Style (16th Edition):
Pan, Chi-Ruei. “Properties of two-dimensional materials grown on metal substrates.” 2019. Doctoral Dissertation, Georgia Tech. Accessed April 10, 2021.
http://hdl.handle.net/1853/62616.
MLA Handbook (7th Edition):
Pan, Chi-Ruei. “Properties of two-dimensional materials grown on metal substrates.” 2019. Web. 10 Apr 2021.
Vancouver:
Pan C. Properties of two-dimensional materials grown on metal substrates. [Internet] [Doctoral dissertation]. Georgia Tech; 2019. [cited 2021 Apr 10].
Available from: http://hdl.handle.net/1853/62616.
Council of Science Editors:
Pan C. Properties of two-dimensional materials grown on metal substrates. [Doctoral Dissertation]. Georgia Tech; 2019. Available from: http://hdl.handle.net/1853/62616

Anna University
28.
Balaji M.
Epitaxial growth and characterization of aluminum nitride
and effects of ion irradiation on aluminum gallium nitride gallium
nitride heterostructures.
Degree: Crystal growth, 2013, Anna University
URL: http://shodhganga.inflibnet.ac.in/handle/10603/17748
► Aluminum nitride (AlN), Gallium nitride (GaN) and its ternary alloy Aluminum Gallium Nitride (AlGaN) are the potential materials for ultraviolet emitters and detectors due to…
(more)
▼ Aluminum nitride (AlN), Gallium nitride (GaN) and
its ternary alloy Aluminum Gallium Nitride (AlGaN) are the
potential materials for ultraviolet emitters and detectors due to
their direct wide band gap. The ultraviolet light emission from
AlxGa1-xN can be tunable from 360 (GaN) to 200 (AlN) nm by varying
the aluminum composition (x) from 0 to 100 %. The lack of native
substrates forces the heteroepitaxial growth of AlN, GaN and AlGaN
on sapphire (Al2O3) and silicon carbide (SiC) substrates. For cost
reasons, c-plane sapphire is often used despite the large lattice
mismatch and large difference in thermal expansion. AlN has been
used as the buffer layer for AlGaN layer based deep ultraviolet
(DUV) light emitting devices to accommodate the mismatches and
reduce the dislocation density. AlN possesses excellent UV light
transparency and excellent lattice match with high Al content AlGaN
layers. In addition, AlN has high thermal conductivity (3.2 W cm-1
K-1) and high breakdown voltage (12 MV cm-1) essential for
high-power and high temperature electronic devices. However, growth
of AlN has many challenges due to the heteroepitaxy, high sticking
coefficient of Aluminum (Al), parasitic reactions between Al and
ammonia (NH3), etc. Despite these challenges, growth of AlN
epilayers have been studied in detail with the AlN nucleation
layers to improve the crystalline quality. On the other part,
investigations on the radiation tolerance and defect resistance of
AlGaN/GaN heterostructures upon swift heavy irradiation at room and
low temperature have been carried out. Iv Growth of high
temperature (HT) - AlN layers with nucleation layers have been
performed using high temperature hydride vapor phase epitaxy
(HT-HVPE) at 1200 and 1400 °C. The influence of growth temperature
and HT-treatment on AlN nucleation layer (NL) morphology and
thickness have been studied. It has been concluded that the
rearrangement of the AlN-NL surface during HT-treatment at 1200
°C.
References p. 162-173
Advisors/Committee Members: Baskar K.
Subjects/Keywords: Aluminum Nitride; Crystal growth; Epitaxial Growth; Gallium Nitride Heterostructures; Ion Irradiation
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APA ·
Chicago ·
MLA ·
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APA (6th Edition):
M, B. (2013). Epitaxial growth and characterization of aluminum nitride
and effects of ion irradiation on aluminum gallium nitride gallium
nitride heterostructures. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/17748
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
M, Balaji. “Epitaxial growth and characterization of aluminum nitride
and effects of ion irradiation on aluminum gallium nitride gallium
nitride heterostructures.” 2013. Thesis, Anna University. Accessed April 10, 2021.
http://shodhganga.inflibnet.ac.in/handle/10603/17748.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
M, Balaji. “Epitaxial growth and characterization of aluminum nitride
and effects of ion irradiation on aluminum gallium nitride gallium
nitride heterostructures.” 2013. Web. 10 Apr 2021.
Vancouver:
M B. Epitaxial growth and characterization of aluminum nitride
and effects of ion irradiation on aluminum gallium nitride gallium
nitride heterostructures. [Internet] [Thesis]. Anna University; 2013. [cited 2021 Apr 10].
Available from: http://shodhganga.inflibnet.ac.in/handle/10603/17748.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
M B. Epitaxial growth and characterization of aluminum nitride
and effects of ion irradiation on aluminum gallium nitride gallium
nitride heterostructures. [Thesis]. Anna University; 2013. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/17748
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Texas A&M University
29.
Comeaux, Justin.
Testing and Simulation of the SRF Wafer Test Cavity for the Characterization of Superconductors and Heterostructures.
Degree: MS, Physics, 2014, Texas A&M University
URL: http://hdl.handle.net/1969.1/153494
► The wafer test cavity, designed at Texas A&M University, has been constructed and tested at Thomas Jefferson National Accelerator Facility. The mode structure, quality factor…
(more)
▼ The wafer test cavity, designed at Texas A&M University, has been constructed and tested at Thomas Jefferson National Accelerator Facility. The mode structure, quality factor and coupling methods have been investigated. The TE_(011) mode has been located at 1.886492 GHz and the quality factor has been measured from room temperature to 2K. The measured quality factor at 2.7K is found to be 3.96x10^(8). Simulations of the cavity have been performed using Comsol Multiphysics and Mathematica to demonstrate the cavities potential as a test bed for superconducting materials, such as
Heterostructures. The results of the experimental measurements are incorporated into the simulations to show that a Radio Frequency magnetic field of 162 mT can be placed on a sample of superconducting material, giving 81% of the BCS critical magnetic field for niobium.
Advisors/Committee Members: McIntyre, Peter (advisor), Nevels, Robert (committee member), Belyanin, Alexey (committee member).
Subjects/Keywords: Superconducting Radio Frequency Cavity; SRF; Superconductor; Heterostructures; Niobium; Microwave
Record Details
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Record Details
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Comeaux, J. (2014). Testing and Simulation of the SRF Wafer Test Cavity for the Characterization of Superconductors and Heterostructures. (Masters Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/153494
Chicago Manual of Style (16th Edition):
Comeaux, Justin. “Testing and Simulation of the SRF Wafer Test Cavity for the Characterization of Superconductors and Heterostructures.” 2014. Masters Thesis, Texas A&M University. Accessed April 10, 2021.
http://hdl.handle.net/1969.1/153494.
MLA Handbook (7th Edition):
Comeaux, Justin. “Testing and Simulation of the SRF Wafer Test Cavity for the Characterization of Superconductors and Heterostructures.” 2014. Web. 10 Apr 2021.
Vancouver:
Comeaux J. Testing and Simulation of the SRF Wafer Test Cavity for the Characterization of Superconductors and Heterostructures. [Internet] [Masters thesis]. Texas A&M University; 2014. [cited 2021 Apr 10].
Available from: http://hdl.handle.net/1969.1/153494.
Council of Science Editors:
Comeaux J. Testing and Simulation of the SRF Wafer Test Cavity for the Characterization of Superconductors and Heterostructures. [Masters Thesis]. Texas A&M University; 2014. Available from: http://hdl.handle.net/1969.1/153494

Penn State University
30.
Williams, Krystaufeux Dormas.
Transmission Electron Microscopy of ZnSe/CdSe Heterostructure Nanowires.
Degree: 2011, Penn State University
URL: https://submit-etda.libraries.psu.edu/catalog/9672
► Instabilities in the form of kinking (via incoherency across the interface) can occur during growth of heterostructure nanowires (hNWs) by molecular beam epitaxy (MBE). Furthermore,…
(more)
▼ Instabilities in the form of kinking (via incoherency across the interface) can occur during growth of heterostructure nanowires (hNWs) by molecular beam epitaxy (MBE). Furthermore, the challenge remains to create hNWs with controlled diameters, composition and morphology. ZnSe/CdSe NWs were grown in an EPI 620 MBE system equipped with low temperature effusion cells. Transmission electron microscopy was used to characterize the
heterostructures and to suggest a means of fixing these issues. HNWs were studied over temperature and diameter ranges from 415-475°C and 10-25 nm, respectively. It was observed that a linear relationship may exist between the occurrence of kinks in hNWs and the CdSe layer thickness and diameter.
Advisors/Committee Members: Nitin Samarth, Thesis Advisor/Co-Advisor, Nitin Samarth, Thesis Advisor/Co-Advisor.
Subjects/Keywords: transmission electron microscopy; ZnSe; CdSe; heterostructures; nanowires; molecular beam epitaxy
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Record Details
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❌
APA ·
Chicago ·
MLA ·
Vancouver ·
CSE |
Export
to Zotero / EndNote / Reference
Manager
APA (6th Edition):
Williams, K. D. (2011). Transmission Electron Microscopy of ZnSe/CdSe Heterostructure Nanowires. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/9672
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Williams, Krystaufeux Dormas. “Transmission Electron Microscopy of ZnSe/CdSe Heterostructure Nanowires.” 2011. Thesis, Penn State University. Accessed April 10, 2021.
https://submit-etda.libraries.psu.edu/catalog/9672.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Williams, Krystaufeux Dormas. “Transmission Electron Microscopy of ZnSe/CdSe Heterostructure Nanowires.” 2011. Web. 10 Apr 2021.
Vancouver:
Williams KD. Transmission Electron Microscopy of ZnSe/CdSe Heterostructure Nanowires. [Internet] [Thesis]. Penn State University; 2011. [cited 2021 Apr 10].
Available from: https://submit-etda.libraries.psu.edu/catalog/9672.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Williams KD. Transmission Electron Microscopy of ZnSe/CdSe Heterostructure Nanowires. [Thesis]. Penn State University; 2011. Available from: https://submit-etda.libraries.psu.edu/catalog/9672
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
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