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You searched for subject:(Heterojunction bipolar transistor). Showing records 1 – 30 of 43 total matches.

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University of Notre Dame

1. Chuanxin Lian. Wafer-Fused AlGaAs/GaAs/GaN Heterojunction Bipolar Transistors</h1>.

Degree: PhD, Electrical Engineering, 2009, University of Notre Dame

  (Al)GaN materials have established themselves in high speed and high power ap-plications, owing to their large band gap energies and high anticipated electron saturation… (more)

Subjects/Keywords: wafer bonding; wafer fusion; GaAs; heterojunction bipolar transistor; GaN

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APA (6th Edition):

Lian, C. (2009). Wafer-Fused AlGaAs/GaAs/GaN Heterojunction Bipolar Transistors</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/5x21td98h1c

Chicago Manual of Style (16th Edition):

Lian, Chuanxin. “Wafer-Fused AlGaAs/GaAs/GaN Heterojunction Bipolar Transistors</h1>.” 2009. Doctoral Dissertation, University of Notre Dame. Accessed March 25, 2019. https://curate.nd.edu/show/5x21td98h1c.

MLA Handbook (7th Edition):

Lian, Chuanxin. “Wafer-Fused AlGaAs/GaAs/GaN Heterojunction Bipolar Transistors</h1>.” 2009. Web. 25 Mar 2019.

Vancouver:

Lian C. Wafer-Fused AlGaAs/GaAs/GaN Heterojunction Bipolar Transistors</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2009. [cited 2019 Mar 25]. Available from: https://curate.nd.edu/show/5x21td98h1c.

Council of Science Editors:

Lian C. Wafer-Fused AlGaAs/GaAs/GaN Heterojunction Bipolar Transistors</h1>. [Doctoral Dissertation]. University of Notre Dame; 2009. Available from: https://curate.nd.edu/show/5x21td98h1c


University of Illinois – Urbana-Champaign

2. Cheng, Kuang. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications.

Degree: PhD, 1200, 2012, University of Illinois – Urbana-Champaign

 The prevalence of mobile computing devices and emerging demand for high data rate communication have motivated development of low power consumption, high performance circuits composed… (more)

Subjects/Keywords: Heterojunction Bipolar Transistor (HBT); Linearity; GaAsSb; Microwave Devices; Type-I DHBTs; Type-II DHBTs; Type-I/II DHBTs; Double Heterojunction Bipolar Transistor (DHBT)

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APA (6th Edition):

Cheng, K. (2012). Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/29462

Chicago Manual of Style (16th Edition):

Cheng, Kuang. “Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications.” 2012. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed March 25, 2019. http://hdl.handle.net/2142/29462.

MLA Handbook (7th Edition):

Cheng, Kuang. “Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications.” 2012. Web. 25 Mar 2019.

Vancouver:

Cheng K. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2012. [cited 2019 Mar 25]. Available from: http://hdl.handle.net/2142/29462.

Council of Science Editors:

Cheng K. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/29462


Penn State University

3. Dormaier, Robert A. Ohmic contacts to compound semiconductor transistors.

Degree: PhD, Materials Science and Engineering, 2011, Penn State University

 This thesis addresses Ohmic contacts to InAlSb/InAs high electron mobility transistor (HEMT) heterostructures and InGaAs epilayers. Palladium-based contacts provide very low contact resistance to both… (more)

Subjects/Keywords: high electron mobility transistor; heterojunction bipolar transistor; surface preparation; indium arsenide; Indium gallium arsenide; Ohmic contacts; antimonide based compound semiconductor

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APA (6th Edition):

Dormaier, R. A. (2011). Ohmic contacts to compound semiconductor transistors. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/12401

Chicago Manual of Style (16th Edition):

Dormaier, Robert A. “Ohmic contacts to compound semiconductor transistors.” 2011. Doctoral Dissertation, Penn State University. Accessed March 25, 2019. https://etda.libraries.psu.edu/catalog/12401.

MLA Handbook (7th Edition):

Dormaier, Robert A. “Ohmic contacts to compound semiconductor transistors.” 2011. Web. 25 Mar 2019.

Vancouver:

Dormaier RA. Ohmic contacts to compound semiconductor transistors. [Internet] [Doctoral dissertation]. Penn State University; 2011. [cited 2019 Mar 25]. Available from: https://etda.libraries.psu.edu/catalog/12401.

Council of Science Editors:

Dormaier RA. Ohmic contacts to compound semiconductor transistors. [Doctoral Dissertation]. Penn State University; 2011. Available from: https://etda.libraries.psu.edu/catalog/12401


University of Cincinnati

4. BREED, ANIKET AJITKUMAR. SIMULATION STUDY OF PARASITIC BARRIER FORMATION IN Si/SiGe HETEROSTRUCTURES.

Degree: MS, Engineering : Electrical Engineering, 2002, University of Cincinnati

 In this study, the effects of displacement of a p-n junction from coincidence with a SiGe/Si heterojunction have been investigated using a simple analytical model.… (more)

Subjects/Keywords: silicon-germanium; heterojunction bipolar transistor; parasitic barrier; SiGe

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APA (6th Edition):

BREED, A. A. (2002). SIMULATION STUDY OF PARASITIC BARRIER FORMATION IN Si/SiGe HETEROSTRUCTURES. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1029256143

Chicago Manual of Style (16th Edition):

BREED, ANIKET AJITKUMAR. “SIMULATION STUDY OF PARASITIC BARRIER FORMATION IN Si/SiGe HETEROSTRUCTURES.” 2002. Masters Thesis, University of Cincinnati. Accessed March 25, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1029256143.

MLA Handbook (7th Edition):

BREED, ANIKET AJITKUMAR. “SIMULATION STUDY OF PARASITIC BARRIER FORMATION IN Si/SiGe HETEROSTRUCTURES.” 2002. Web. 25 Mar 2019.

Vancouver:

BREED AA. SIMULATION STUDY OF PARASITIC BARRIER FORMATION IN Si/SiGe HETEROSTRUCTURES. [Internet] [Masters thesis]. University of Cincinnati; 2002. [cited 2019 Mar 25]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1029256143.

Council of Science Editors:

BREED AA. SIMULATION STUDY OF PARASITIC BARRIER FORMATION IN Si/SiGe HETEROSTRUCTURES. [Masters Thesis]. University of Cincinnati; 2002. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1029256143


NSYSU

5. Li, Jian-Yu. Monolithic-Microwave Integrated-Circuit Design of Hetero-Junction Bipolar Transistor Power Amplifier for Wireless Communications.

Degree: Master, Electrical Engineering, 2000, NSYSU

 Using GaAs HBT provided by AWSC to construct Gummel Poon static model.then using the GaAs HBT processing of GCS to design MMIC power amplifier for… (more)

Subjects/Keywords: Power amplifier; Monolithic microwave integrated circuit; Heterojunction bipolar transistor

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APA (6th Edition):

Li, J. (2000). Monolithic-Microwave Integrated-Circuit Design of Hetero-Junction Bipolar Transistor Power Amplifier for Wireless Communications. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701100-175055

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Jian-Yu. “Monolithic-Microwave Integrated-Circuit Design of Hetero-Junction Bipolar Transistor Power Amplifier for Wireless Communications.” 2000. Thesis, NSYSU. Accessed March 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701100-175055.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Jian-Yu. “Monolithic-Microwave Integrated-Circuit Design of Hetero-Junction Bipolar Transistor Power Amplifier for Wireless Communications.” 2000. Web. 25 Mar 2019.

Vancouver:

Li J. Monolithic-Microwave Integrated-Circuit Design of Hetero-Junction Bipolar Transistor Power Amplifier for Wireless Communications. [Internet] [Thesis]. NSYSU; 2000. [cited 2019 Mar 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701100-175055.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li J. Monolithic-Microwave Integrated-Circuit Design of Hetero-Junction Bipolar Transistor Power Amplifier for Wireless Communications. [Thesis]. NSYSU; 2000. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701100-175055

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Manchester

6. Zhang, Yongjian. Investigation of Electrical and Optical Characterisation of HBTs for Optical Detection.

Degree: 2016, University of Manchester

 In this thesis, a detailed study of the electrical and optical characterisations of Heterojuction Bipolar Transistors (HBTs) for optical detection is presented. By comparing both… (more)

Subjects/Keywords: Optical Detector; Semiconductor; Heterojunction Bipolar transistor; InGaP/GaAs; AlGaAs/GaAs; DHBT; Eye diagram; Small Signal Model; Modelling; Spectral Response

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APA (6th Edition):

Zhang, Y. (2016). Investigation of Electrical and Optical Characterisation of HBTs for Optical Detection. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:301366

Chicago Manual of Style (16th Edition):

Zhang, Yongjian. “Investigation of Electrical and Optical Characterisation of HBTs for Optical Detection.” 2016. Doctoral Dissertation, University of Manchester. Accessed March 25, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:301366.

MLA Handbook (7th Edition):

Zhang, Yongjian. “Investigation of Electrical and Optical Characterisation of HBTs for Optical Detection.” 2016. Web. 25 Mar 2019.

Vancouver:

Zhang Y. Investigation of Electrical and Optical Characterisation of HBTs for Optical Detection. [Internet] [Doctoral dissertation]. University of Manchester; 2016. [cited 2019 Mar 25]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:301366.

Council of Science Editors:

Zhang Y. Investigation of Electrical and Optical Characterisation of HBTs for Optical Detection. [Doctoral Dissertation]. University of Manchester; 2016. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:301366


University of Manchester

7. Zhang, Yongjian. Investigation of electrical and optical characterisation of HBTs for optical detection.

Degree: PhD, 2016, University of Manchester

 In this thesis, a detailed study of the electrical and optical characterisations of Heterojuction Bipolar Transistors (HBTs) for optical detection is presented. By comparing both… (more)

Subjects/Keywords: Modelling; Small Signal Model; Eye diagram; DHBT; Spectral Response; InGaP/GaAs; Heterojunction Bipolar transistor; Semiconductor; Optical Detector; AlGaAs/GaAs

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APA (6th Edition):

Zhang, Y. (2016). Investigation of electrical and optical characterisation of HBTs for optical detection. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/investigation-of-electrical-and-optical-characterisation-of-hbts-for-optical-detection(3c47e08f-9201-4465-b2b5-268aa0360309).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.727877

Chicago Manual of Style (16th Edition):

Zhang, Yongjian. “Investigation of electrical and optical characterisation of HBTs for optical detection.” 2016. Doctoral Dissertation, University of Manchester. Accessed March 25, 2019. https://www.research.manchester.ac.uk/portal/en/theses/investigation-of-electrical-and-optical-characterisation-of-hbts-for-optical-detection(3c47e08f-9201-4465-b2b5-268aa0360309).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.727877.

MLA Handbook (7th Edition):

Zhang, Yongjian. “Investigation of electrical and optical characterisation of HBTs for optical detection.” 2016. Web. 25 Mar 2019.

Vancouver:

Zhang Y. Investigation of electrical and optical characterisation of HBTs for optical detection. [Internet] [Doctoral dissertation]. University of Manchester; 2016. [cited 2019 Mar 25]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/investigation-of-electrical-and-optical-characterisation-of-hbts-for-optical-detection(3c47e08f-9201-4465-b2b5-268aa0360309).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.727877.

Council of Science Editors:

Zhang Y. Investigation of electrical and optical characterisation of HBTs for optical detection. [Doctoral Dissertation]. University of Manchester; 2016. Available from: https://www.research.manchester.ac.uk/portal/en/theses/investigation-of-electrical-and-optical-characterisation-of-hbts-for-optical-detection(3c47e08f-9201-4465-b2b5-268aa0360309).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.727877


Georgia Tech

8. Chakraborty, Partha Sarathi. Design, scaling and reliability of devices for high-performance mixed-signal applications.

Degree: PhD, Electrical and Computer Engineering, 2015, Georgia Tech

 This research investigates and gains new understanding on how silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) device design couples with both performance scaling and reliability for… (more)

Subjects/Keywords: Silicon-germanium; Heterojunction bipolar transistor; TCAD; Scaling; Reliability; Device design; Mixed-signal; Simulation; High-frequency; Cryogenic temperature; Characterization

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APA (6th Edition):

Chakraborty, P. S. (2015). Design, scaling and reliability of devices for high-performance mixed-signal applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58137

Chicago Manual of Style (16th Edition):

Chakraborty, Partha Sarathi. “Design, scaling and reliability of devices for high-performance mixed-signal applications.” 2015. Doctoral Dissertation, Georgia Tech. Accessed March 25, 2019. http://hdl.handle.net/1853/58137.

MLA Handbook (7th Edition):

Chakraborty, Partha Sarathi. “Design, scaling and reliability of devices for high-performance mixed-signal applications.” 2015. Web. 25 Mar 2019.

Vancouver:

Chakraborty PS. Design, scaling and reliability of devices for high-performance mixed-signal applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2019 Mar 25]. Available from: http://hdl.handle.net/1853/58137.

Council of Science Editors:

Chakraborty PS. Design, scaling and reliability of devices for high-performance mixed-signal applications. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/58137


University of Notre Dame

9. Chuanxin Lian. Scanning Kelvin Probe Microscopic Study of Ni-(Al)GaN and Heterogeneous Integration of GaAs/GaN by Wafer Fusion</h1>.

Degree: MSin Electrical Engineering, Electrical Engineering, 2006, University of Notre Dame

  Scanning Kelvin probe microscopy was applied for the surface potential (SP) measurements across lateral Ni-(Al)GaN Schottky junctions. The bare surface barrier heights of unintentionally… (more)

Subjects/Keywords: heterojunction bipolar transistor; diffusion length; wafer fusion; surface potential

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APA (6th Edition):

Lian, C. (2006). Scanning Kelvin Probe Microscopic Study of Ni-(Al)GaN and Heterogeneous Integration of GaAs/GaN by Wafer Fusion</h1>. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/jm214m92p1t

Chicago Manual of Style (16th Edition):

Lian, Chuanxin. “Scanning Kelvin Probe Microscopic Study of Ni-(Al)GaN and Heterogeneous Integration of GaAs/GaN by Wafer Fusion</h1>.” 2006. Masters Thesis, University of Notre Dame. Accessed March 25, 2019. https://curate.nd.edu/show/jm214m92p1t.

MLA Handbook (7th Edition):

Lian, Chuanxin. “Scanning Kelvin Probe Microscopic Study of Ni-(Al)GaN and Heterogeneous Integration of GaAs/GaN by Wafer Fusion</h1>.” 2006. Web. 25 Mar 2019.

Vancouver:

Lian C. Scanning Kelvin Probe Microscopic Study of Ni-(Al)GaN and Heterogeneous Integration of GaAs/GaN by Wafer Fusion</h1>. [Internet] [Masters thesis]. University of Notre Dame; 2006. [cited 2019 Mar 25]. Available from: https://curate.nd.edu/show/jm214m92p1t.

Council of Science Editors:

Lian C. Scanning Kelvin Probe Microscopic Study of Ni-(Al)GaN and Heterogeneous Integration of GaAs/GaN by Wafer Fusion</h1>. [Masters Thesis]. University of Notre Dame; 2006. Available from: https://curate.nd.edu/show/jm214m92p1t


Kyoto University / 京都大学

10. Miyake, Hiroki. Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors : AlGaN/SiCヘテロ接合界面制御および高電流増幅率SiC系バイポーラトランジスタの実現.

Degree: 博士(工学), 2012, Kyoto University / 京都大学

新制・課程博士

甲第16862号

工博第3583号

Subjects/Keywords: Sic; bipolar transistor; BJT; heterojunction bipolar transistors; HBT; GaN; AlGaN; current gain

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APA (6th Edition):

Miyake, H. (2012). Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors : AlGaN/SiCヘテロ接合界面制御および高電流増幅率SiC系バイポーラトランジスタの実現. (Thesis). Kyoto University / 京都大学. Retrieved from http://hdl.handle.net/2433/157593 ; http://dx.doi.org/10.14989/doctor.k16862

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Miyake, Hiroki. “Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors : AlGaN/SiCヘテロ接合界面制御および高電流増幅率SiC系バイポーラトランジスタの実現.” 2012. Thesis, Kyoto University / 京都大学. Accessed March 25, 2019. http://hdl.handle.net/2433/157593 ; http://dx.doi.org/10.14989/doctor.k16862.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Miyake, Hiroki. “Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors : AlGaN/SiCヘテロ接合界面制御および高電流増幅率SiC系バイポーラトランジスタの実現.” 2012. Web. 25 Mar 2019.

Vancouver:

Miyake H. Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors : AlGaN/SiCヘテロ接合界面制御および高電流増幅率SiC系バイポーラトランジスタの実現. [Internet] [Thesis]. Kyoto University / 京都大学; 2012. [cited 2019 Mar 25]. Available from: http://hdl.handle.net/2433/157593 ; http://dx.doi.org/10.14989/doctor.k16862.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Miyake H. Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors : AlGaN/SiCヘテロ接合界面制御および高電流増幅率SiC系バイポーラトランジスタの実現. [Thesis]. Kyoto University / 京都大学; 2012. Available from: http://hdl.handle.net/2433/157593 ; http://dx.doi.org/10.14989/doctor.k16862

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

11. Bellini, Marco. Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 Recently, several SiGe HBT devices fabricated on CMOS-compatible silicon on insulator (SOI) substrates (SiGe HBTs-on-SOI) have been demonstrated, combining the well-known SiGe HBT performance with… (more)

Subjects/Keywords: SiGe; Extreme environments; HBT-on-SOI; Heterojunction bipolar transistor; Silicon germanium; TCAD; Heterojunctions; Bipolar transistors; Silicon compounds; Germanium; Extreme environments; Silicon-on-insulator technology

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APA (6th Edition):

Bellini, M. (2009). Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/28206

Chicago Manual of Style (16th Edition):

Bellini, Marco. “Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments.” 2009. Doctoral Dissertation, Georgia Tech. Accessed March 25, 2019. http://hdl.handle.net/1853/28206.

MLA Handbook (7th Edition):

Bellini, Marco. “Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments.” 2009. Web. 25 Mar 2019.

Vancouver:

Bellini M. Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2019 Mar 25]. Available from: http://hdl.handle.net/1853/28206.

Council of Science Editors:

Bellini M. Operation of silicon-germanium heterojunction bipolar transistors on silicon-on-insulator in extreme environments. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/28206


Kyoto University

12. Miyake, Hiroki. Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors .

Degree: 2012, Kyoto University

Subjects/Keywords: Sic; bipolar transistor; BJT; heterojunction bipolar transistors; HBT; GaN; AlGaN; current gain

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APA (6th Edition):

Miyake, H. (2012). Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors . (Thesis). Kyoto University. Retrieved from http://hdl.handle.net/2433/157593

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Miyake, Hiroki. “Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors .” 2012. Thesis, Kyoto University. Accessed March 25, 2019. http://hdl.handle.net/2433/157593.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Miyake, Hiroki. “Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors .” 2012. Web. 25 Mar 2019.

Vancouver:

Miyake H. Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors . [Internet] [Thesis]. Kyoto University; 2012. [cited 2019 Mar 25]. Available from: http://hdl.handle.net/2433/157593.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Miyake H. Interface Control of AlGaN/SiC Heterojunction and Development of High-Current-Gain SiC-Based Bipolar Transistors . [Thesis]. Kyoto University; 2012. Available from: http://hdl.handle.net/2433/157593

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

13. Lee, Yi-Che. Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 The fabrication processes development for on III-nitride (III-N) heterojunction bipolar transistors (HBTs), heterojunction field-effect transistors (HFETs) and metal-insulator-semiconductor field-effect transistors (MISFETs) were performed. D.c, microwave… (more)

Subjects/Keywords: III-nitride; Heterojunction; Bipolar transistor; Field-effect transistor; Fabrication process

…capacitance Capacitance-voltage Direct current Direct-growth heterojunction bipolar transistor Trap… …Transconductance Gate-to-source Heterojunction bipolar transistor High-electron-mobility transistor… …bipolar transistor at forward-active condition… …Hafnium aluminum oxide Differential current gain Heterojunction field-effect transistor High… …presents the development and achievement on III-nitride (III-N) heterojunction bipolar… 

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APA (6th Edition):

Lee, Y. (2014). Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53472

Chicago Manual of Style (16th Edition):

Lee, Yi-Che. “Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors.” 2014. Doctoral Dissertation, Georgia Tech. Accessed March 25, 2019. http://hdl.handle.net/1853/53472.

MLA Handbook (7th Edition):

Lee, Yi-Che. “Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors.” 2014. Web. 25 Mar 2019.

Vancouver:

Lee Y. Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2019 Mar 25]. Available from: http://hdl.handle.net/1853/53472.

Council of Science Editors:

Lee Y. Development of III-nitride transistors: heterojunction bipolar transistors and field-effect transistors. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/53472


Université Paris-Sud – Paris XI

14. Quiroga, Andrés. Investigation and development of advanced Si/SiGe and Si/SiGeC Heterojunction Bipolar Transistors by means of Technology Modeling : Recherche et développement de transistors bipolaires avancés par le biais de la modélisation technologique.

Degree: Docteur es, Physique, 2013, Université Paris-Sud – Paris XI

Le travail porte sur le développement et l’optimisation de transistors bipolaires à hétérojonction (TBH) SiGe et SiGeC par conception technologique assistée par ordinateur (TCAD). L'objectif… (more)

Subjects/Keywords: Modélisation technologique TCAD; Transistor bipolaire à hétérojonctions SiGeC/Si; Technologies BiCMOS; Technology Computer Aided Design TCAD; SiGeC/Si Heterojunction bipolar transistor; BiCMOS Technology

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APA (6th Edition):

Quiroga, A. (2013). Investigation and development of advanced Si/SiGe and Si/SiGeC Heterojunction Bipolar Transistors by means of Technology Modeling : Recherche et développement de transistors bipolaires avancés par le biais de la modélisation technologique. (Doctoral Dissertation). Université Paris-Sud – Paris XI. Retrieved from http://www.theses.fr/2013PA112273

Chicago Manual of Style (16th Edition):

Quiroga, Andrés. “Investigation and development of advanced Si/SiGe and Si/SiGeC Heterojunction Bipolar Transistors by means of Technology Modeling : Recherche et développement de transistors bipolaires avancés par le biais de la modélisation technologique.” 2013. Doctoral Dissertation, Université Paris-Sud – Paris XI. Accessed March 25, 2019. http://www.theses.fr/2013PA112273.

MLA Handbook (7th Edition):

Quiroga, Andrés. “Investigation and development of advanced Si/SiGe and Si/SiGeC Heterojunction Bipolar Transistors by means of Technology Modeling : Recherche et développement de transistors bipolaires avancés par le biais de la modélisation technologique.” 2013. Web. 25 Mar 2019.

Vancouver:

Quiroga A. Investigation and development of advanced Si/SiGe and Si/SiGeC Heterojunction Bipolar Transistors by means of Technology Modeling : Recherche et développement de transistors bipolaires avancés par le biais de la modélisation technologique. [Internet] [Doctoral dissertation]. Université Paris-Sud – Paris XI; 2013. [cited 2019 Mar 25]. Available from: http://www.theses.fr/2013PA112273.

Council of Science Editors:

Quiroga A. Investigation and development of advanced Si/SiGe and Si/SiGeC Heterojunction Bipolar Transistors by means of Technology Modeling : Recherche et développement de transistors bipolaires avancés par le biais de la modélisation technologique. [Doctoral Dissertation]. Université Paris-Sud – Paris XI; 2013. Available from: http://www.theses.fr/2013PA112273


University of Pretoria

15. Venter, Johan H. Dynamic range and sensitivity improvement of infrared detectors using BiCMOS technology.

Degree: Electrical, Electronic and Computer Engineering, 2013, University of Pretoria

 The field of infrared (IR) detector technology has shown vast improvements in terms of speed and performance over the years. Specifically the dynamic range (DR)… (more)

Subjects/Keywords: Ruis; Bipolêre gekomplementeerde metaaloksiedhalfgelei; Heterojunction bipolar transistor (HBT); Kwantumput; Infrared sensors; Dinamiese bereik; Quantum wells; Bipolar complementary metal-oxide semiconductor; Ladinggekoppelde toestel; Beeldsensor; Sensitiwiteit; Kwantumdoeltreffendheid; Sige; Current; Heterovoegvlak- bipolêre transistor; Charged-coupled device image sensor; Quantum efficiency; Noise; Sensitivity; Infrarooi sensors; Stroomvloei; Sige; Dynamic range; UCTD

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APA (6th Edition):

Venter, J. H. (2013). Dynamic range and sensitivity improvement of infrared detectors using BiCMOS technology. (Masters Thesis). University of Pretoria. Retrieved from http://hdl.handle.net/2263/25267

Chicago Manual of Style (16th Edition):

Venter, Johan H. “Dynamic range and sensitivity improvement of infrared detectors using BiCMOS technology.” 2013. Masters Thesis, University of Pretoria. Accessed March 25, 2019. http://hdl.handle.net/2263/25267.

MLA Handbook (7th Edition):

Venter, Johan H. “Dynamic range and sensitivity improvement of infrared detectors using BiCMOS technology.” 2013. Web. 25 Mar 2019.

Vancouver:

Venter JH. Dynamic range and sensitivity improvement of infrared detectors using BiCMOS technology. [Internet] [Masters thesis]. University of Pretoria; 2013. [cited 2019 Mar 25]. Available from: http://hdl.handle.net/2263/25267.

Council of Science Editors:

Venter JH. Dynamic range and sensitivity improvement of infrared detectors using BiCMOS technology. [Masters Thesis]. University of Pretoria; 2013. Available from: http://hdl.handle.net/2263/25267


University of Pretoria

16. [No author]. Dynamic range and sensitivity improvement of infrared detectors using BiCMOS technology .

Degree: 2013, University of Pretoria

 The field of infrared (IR) detector technology has shown vast improvements in terms of speed and performance over the years. Specifically the dynamic range (DR)… (more)

Subjects/Keywords: Ruis; Bipolêre gekomplementeerde metaaloksiedhalfgelei; Heterojunction bipolar transistor; Kwantumput; Infrared sensors; Dinamiese bereik; Quantum wells; Bipolar complementary metal-oxide semiconductor; Ladinggekoppelde toestel; Beeldsensor; Sensitiwiteit; Kwantumdoeltreffendheid; Sige; Current; Heterovoegvlak- bipolêre transistor; Charged-coupled device image sensor; Quantum efficiency; Noise; Sensitivity; Infrarooi sensors; Stroomvloei; Sige; Dynamic range; UCTD

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APA (6th Edition):

author], [. (2013). Dynamic range and sensitivity improvement of infrared detectors using BiCMOS technology . (Masters Thesis). University of Pretoria. Retrieved from http://upetd.up.ac.za/thesis/available/etd-06042013-121238/

Chicago Manual of Style (16th Edition):

author], [No. “Dynamic range and sensitivity improvement of infrared detectors using BiCMOS technology .” 2013. Masters Thesis, University of Pretoria. Accessed March 25, 2019. http://upetd.up.ac.za/thesis/available/etd-06042013-121238/.

MLA Handbook (7th Edition):

author], [No. “Dynamic range and sensitivity improvement of infrared detectors using BiCMOS technology .” 2013. Web. 25 Mar 2019.

Vancouver:

author] [. Dynamic range and sensitivity improvement of infrared detectors using BiCMOS technology . [Internet] [Masters thesis]. University of Pretoria; 2013. [cited 2019 Mar 25]. Available from: http://upetd.up.ac.za/thesis/available/etd-06042013-121238/.

Council of Science Editors:

author] [. Dynamic range and sensitivity improvement of infrared detectors using BiCMOS technology . [Masters Thesis]. University of Pretoria; 2013. Available from: http://upetd.up.ac.za/thesis/available/etd-06042013-121238/


University of Pretoria

17. Weststrate, Marnus. LC-ladder and capacitive shunt-shunt feedback LNA modelling for wideband HBT receivers.

Degree: Electrical, Electronic and Computer Engineering, 2011, University of Pretoria

 Although the majority of wireless receiver subsystems have moved to digital signal processing over the last decade, the low noise amplifier (LNA) remains a crucial… (more)

Subjects/Keywords: Noise optimization; Mathematical model; Impedance matching; Noise generators; Capacitive feedback; Ladder filters; Low noise amplifier; Wideband; Mm-wave; Sige heterojunction bipolar transistor (hbt); Performance trade-offs; UCTD

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APA (6th Edition):

Weststrate, M. (2011). LC-ladder and capacitive shunt-shunt feedback LNA modelling for wideband HBT receivers. (Doctoral Dissertation). University of Pretoria. Retrieved from http://hdl.handle.net/2263/26615

Chicago Manual of Style (16th Edition):

Weststrate, Marnus. “LC-ladder and capacitive shunt-shunt feedback LNA modelling for wideband HBT receivers.” 2011. Doctoral Dissertation, University of Pretoria. Accessed March 25, 2019. http://hdl.handle.net/2263/26615.

MLA Handbook (7th Edition):

Weststrate, Marnus. “LC-ladder and capacitive shunt-shunt feedback LNA modelling for wideband HBT receivers.” 2011. Web. 25 Mar 2019.

Vancouver:

Weststrate M. LC-ladder and capacitive shunt-shunt feedback LNA modelling for wideband HBT receivers. [Internet] [Doctoral dissertation]. University of Pretoria; 2011. [cited 2019 Mar 25]. Available from: http://hdl.handle.net/2263/26615.

Council of Science Editors:

Weststrate M. LC-ladder and capacitive shunt-shunt feedback LNA modelling for wideband HBT receivers. [Doctoral Dissertation]. University of Pretoria; 2011. Available from: http://hdl.handle.net/2263/26615


University of Cincinnati

18. BALARAMAN, PRADEEP ARUGUNAM. DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS.

Degree: MS, Engineering : Electrical Engineering, 2003, University of Cincinnati

 Device modeling using a two dimensional, drift-diffusion approach utilizing a commercial numerical device simulator has been used to investigate the operation and performance of InP/GaAsSb… (more)

Subjects/Keywords: InP/GaAsSb/InP; Heterojunction bipolar transistor; device physics; simulation, modeling

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APA (6th Edition):

BALARAMAN, P. A. (2003). DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786

Chicago Manual of Style (16th Edition):

BALARAMAN, PRADEEP ARUGUNAM. “DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS.” 2003. Masters Thesis, University of Cincinnati. Accessed March 25, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786.

MLA Handbook (7th Edition):

BALARAMAN, PRADEEP ARUGUNAM. “DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS.” 2003. Web. 25 Mar 2019.

Vancouver:

BALARAMAN PA. DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS. [Internet] [Masters thesis]. University of Cincinnati; 2003. [cited 2019 Mar 25]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786.

Council of Science Editors:

BALARAMAN PA. DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS. [Masters Thesis]. University of Cincinnati; 2003. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786


NSYSU

19. Wu, Jian-Ming. Monolithic-Microwave Integrated-Circuit Design of Quadrature Modulator for Wireless Communications.

Degree: Master, Electrical Engineering, 2000, NSYSU

 This thesis researchs the design of quadrature modulator consists of 120MHz quadrature modulator that is fabricated using hybrid elements and print circuit board (PCB) technology… (more)

Subjects/Keywords: monolithic-microwave integrated-circuit design; quadrature modulator; GaAs heterojunction bipolar transistor

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APA (6th Edition):

Wu, J. (2000). Monolithic-Microwave Integrated-Circuit Design of Quadrature Modulator for Wireless Communications. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715100-183921

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Jian-Ming. “Monolithic-Microwave Integrated-Circuit Design of Quadrature Modulator for Wireless Communications.” 2000. Thesis, NSYSU. Accessed March 25, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715100-183921.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Jian-Ming. “Monolithic-Microwave Integrated-Circuit Design of Quadrature Modulator for Wireless Communications.” 2000. Web. 25 Mar 2019.

Vancouver:

Wu J. Monolithic-Microwave Integrated-Circuit Design of Quadrature Modulator for Wireless Communications. [Internet] [Thesis]. NSYSU; 2000. [cited 2019 Mar 25]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715100-183921.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu J. Monolithic-Microwave Integrated-Circuit Design of Quadrature Modulator for Wireless Communications. [Thesis]. NSYSU; 2000. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715100-183921

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Pretoria

20. Weststrate, Marnus. LC-ladder and capacitive shunt-shunt feedback LNA modelling for wideband HBT receivers .

Degree: 2011, University of Pretoria

 Although the majority of wireless receiver subsystems have moved to digital signal processing over the last decade, the low noise amplifier (LNA) remains a crucial… (more)

Subjects/Keywords: Noise optimization; Mathematical model; Impedance matching; Noise generators; Capacitive feedback; Ladder filters; Low noise amplifier; Wideband; Mm-wave; Sige heterojunction bipolar transistor (hbt); Performance trade-offs; UCTD

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APA (6th Edition):

Weststrate, M. (2011). LC-ladder and capacitive shunt-shunt feedback LNA modelling for wideband HBT receivers . (Doctoral Dissertation). University of Pretoria. Retrieved from http://upetd.up.ac.za/thesis/available/etd-07242011-153735/

Chicago Manual of Style (16th Edition):

Weststrate, Marnus. “LC-ladder and capacitive shunt-shunt feedback LNA modelling for wideband HBT receivers .” 2011. Doctoral Dissertation, University of Pretoria. Accessed March 25, 2019. http://upetd.up.ac.za/thesis/available/etd-07242011-153735/.

MLA Handbook (7th Edition):

Weststrate, Marnus. “LC-ladder and capacitive shunt-shunt feedback LNA modelling for wideband HBT receivers .” 2011. Web. 25 Mar 2019.

Vancouver:

Weststrate M. LC-ladder and capacitive shunt-shunt feedback LNA modelling for wideband HBT receivers . [Internet] [Doctoral dissertation]. University of Pretoria; 2011. [cited 2019 Mar 25]. Available from: http://upetd.up.ac.za/thesis/available/etd-07242011-153735/.

Council of Science Editors:

Weststrate M. LC-ladder and capacitive shunt-shunt feedback LNA modelling for wideband HBT receivers . [Doctoral Dissertation]. University of Pretoria; 2011. Available from: http://upetd.up.ac.za/thesis/available/etd-07242011-153735/


University of Illinois – Urbana-Champaign

21. Xu, Huiming. High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications.

Degree: PhD, 1200, 2015, University of Illinois – Urbana-Champaign

Heterojunction bipolar transistors (HBTs) are widely used in high-speed mixed-signal, radio frequency, and communication ICs because of their high speed, high breakdown voltage, and high… (more)

Subjects/Keywords: III-V; Heterojunction Bipolar Transistor (HBT); terahertz (THz); GaAsSb; Monolithic Microwave Integrated Circuit (MMIC); Radio Frequency (RF); Indium Phosphide (InP); High-Speed

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APA (6th Edition):

Xu, H. (2015). High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/72954

Chicago Manual of Style (16th Edition):

Xu, Huiming. “High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications.” 2015. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed March 25, 2019. http://hdl.handle.net/2142/72954.

MLA Handbook (7th Edition):

Xu, Huiming. “High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications.” 2015. Web. 25 Mar 2019.

Vancouver:

Xu H. High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2015. [cited 2019 Mar 25]. Available from: http://hdl.handle.net/2142/72954.

Council of Science Editors:

Xu H. High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/72954

22. Stuenkel, Mark E. Compact device modeling and millimeter-wave oscillator design for III-V HBT technology.

Degree: PhD, 0115, 2012, University of Illinois – Urbana-Champaign

 The double heterojunction bipolar transistor (DHBT), through its bandgap engineering, possesses several very favorable traits that allow it to operate at high frequencies while still… (more)

Subjects/Keywords: double heterojunction bipolar transistor (DHBT); Modeling; Oscillator; Millimeter-Wave

…for the heterojunction bipolar transistor. The initial model, the SDD1 model, was developed… …developing large-signal double heterojunction transistor (DHBT) models, and using these… …for single heterojunction bipolar transistors and is based on the Gummel-Poon integral… …the SDD1 model for double heterojunction transistors. Effects stemming from the… …integral charge control relationship derived for high current density bipolar devices [10… 

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APA (6th Edition):

Stuenkel, M. E. (2012). Compact device modeling and millimeter-wave oscillator design for III-V HBT technology. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/29484

Chicago Manual of Style (16th Edition):

Stuenkel, Mark E. “Compact device modeling and millimeter-wave oscillator design for III-V HBT technology.” 2012. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed March 25, 2019. http://hdl.handle.net/2142/29484.

MLA Handbook (7th Edition):

Stuenkel, Mark E. “Compact device modeling and millimeter-wave oscillator design for III-V HBT technology.” 2012. Web. 25 Mar 2019.

Vancouver:

Stuenkel ME. Compact device modeling and millimeter-wave oscillator design for III-V HBT technology. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2012. [cited 2019 Mar 25]. Available from: http://hdl.handle.net/2142/29484.

Council of Science Editors:

Stuenkel ME. Compact device modeling and millimeter-wave oscillator design for III-V HBT technology. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/29484

23. Lee, Edwin Wendell, II. Growth and Nb-doping of MoS2 towards novel 2D/3D heterojunction bipolar transistors.

Degree: PhD, Electrical and Computer Engineering, 2016, The Ohio State University

 Molybdenum disulfide (MoS2) is a member of a group of layered materials called transition metal dichalcogenides (TMDs) characterized by monolayers consisting of a transition metal… (more)

Subjects/Keywords: Engineering; MoS2; Molybdenum disulfide; Doping; 2D-3D; Heterojunction; heterojunction bipolar transistor; transition metal dichalcogenide; 2D materials

…4 1.1.4 MoS2/GaN-based Tunneling Heterojunction Bipolar Transistor (THBT)… …76 5. 2D/3D Tunneling Heterojunction Bipolar Transistor… …Heterojunction Bipolar Transistor (THBT) The performance of GaN-based bipolar junction… …viability as the base/collector junction of a heterojunction bipolar transistor. 5 Furthermore… …2D/3D Tunneling Heterojunction Bipolar Transistors,” [Manuscript in Preparation]… 

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APA (6th Edition):

Lee, Edwin Wendell, I. (2016). Growth and Nb-doping of MoS2 towards novel 2D/3D heterojunction bipolar transistors. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1480686917234143

Chicago Manual of Style (16th Edition):

Lee, Edwin Wendell, II. “Growth and Nb-doping of MoS2 towards novel 2D/3D heterojunction bipolar transistors.” 2016. Doctoral Dissertation, The Ohio State University. Accessed March 25, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1480686917234143.

MLA Handbook (7th Edition):

Lee, Edwin Wendell, II. “Growth and Nb-doping of MoS2 towards novel 2D/3D heterojunction bipolar transistors.” 2016. Web. 25 Mar 2019.

Vancouver:

Lee, Edwin Wendell I. Growth and Nb-doping of MoS2 towards novel 2D/3D heterojunction bipolar transistors. [Internet] [Doctoral dissertation]. The Ohio State University; 2016. [cited 2019 Mar 25]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1480686917234143.

Council of Science Editors:

Lee, Edwin Wendell I. Growth and Nb-doping of MoS2 towards novel 2D/3D heterojunction bipolar transistors. [Doctoral Dissertation]. The Ohio State University; 2016. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1480686917234143


University of Pretoria

24. Lambrechts, Johannes Wynand. Phase noise reduction of a 0.35 μm BiCMOS SiGe 5 GHz Voltage Controlled Oscillator.

Degree: Electrical, Electronic and Computer Engineering, 2010, University of Pretoria

 The research conducted in this dissertation studies the issues regarding the improvement of phase noise performance in a BiCMOS Silicon Germanium (SiGe) cross-coupled differential-pair voltage… (more)

Subjects/Keywords: Phase noise; Voltage controlled oscillator (VCO); Silicon Germanium (SiGe); Single sideband (SSB); Bipolar CMOS (BiCMOS); Performance trade-offs; LC oscillator; Narrowband; Active circuit; Analogue integrated circuit (IC); Heterojunction bipolar transistor (HBT); Tail-current suppression; UCTD

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APA (6th Edition):

Lambrechts, J. W. (2010). Phase noise reduction of a 0.35 μm BiCMOS SiGe 5 GHz Voltage Controlled Oscillator. (Masters Thesis). University of Pretoria. Retrieved from http://hdl.handle.net/2263/29413

Chicago Manual of Style (16th Edition):

Lambrechts, Johannes Wynand. “Phase noise reduction of a 0.35 μm BiCMOS SiGe 5 GHz Voltage Controlled Oscillator.” 2010. Masters Thesis, University of Pretoria. Accessed March 25, 2019. http://hdl.handle.net/2263/29413.

MLA Handbook (7th Edition):

Lambrechts, Johannes Wynand. “Phase noise reduction of a 0.35 μm BiCMOS SiGe 5 GHz Voltage Controlled Oscillator.” 2010. Web. 25 Mar 2019.

Vancouver:

Lambrechts JW. Phase noise reduction of a 0.35 μm BiCMOS SiGe 5 GHz Voltage Controlled Oscillator. [Internet] [Masters thesis]. University of Pretoria; 2010. [cited 2019 Mar 25]. Available from: http://hdl.handle.net/2263/29413.

Council of Science Editors:

Lambrechts JW. Phase noise reduction of a 0.35 μm BiCMOS SiGe 5 GHz Voltage Controlled Oscillator. [Masters Thesis]. University of Pretoria; 2010. Available from: http://hdl.handle.net/2263/29413


University of Pretoria

25. [No author]. A SiGe BiCMOS LNA for mm-wave applications .

Degree: 2012, University of Pretoria

 A 5 GHz continuous unlicensed bandwidth is available at millimeter-wave (mm-wave) frequencies around 60 GHz and offers the prospect for multi gigabit wireless applications. The… (more)

Subjects/Keywords: Slow-wave cpw (s-cpw); Electromagnetic (em) analysis; Transmission line; Coplanar waveguide (cpw); Low-noise amplifier (lna); Bipolar cmos (bicmos); Millimeter-wave (mm-wave); Silicon germanium (sige); Cascode amplifier; Impedance matching network (imn); Heterojunction bipolar transistor (hbt); Integrated circuit (ic); UCTD

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APA (6th Edition):

author], [. (2012). A SiGe BiCMOS LNA for mm-wave applications . (Masters Thesis). University of Pretoria. Retrieved from http://upetd.up.ac.za/thesis/available/etd-02012012-115339/

Chicago Manual of Style (16th Edition):

author], [No. “A SiGe BiCMOS LNA for mm-wave applications .” 2012. Masters Thesis, University of Pretoria. Accessed March 25, 2019. http://upetd.up.ac.za/thesis/available/etd-02012012-115339/.

MLA Handbook (7th Edition):

author], [No. “A SiGe BiCMOS LNA for mm-wave applications .” 2012. Web. 25 Mar 2019.

Vancouver:

author] [. A SiGe BiCMOS LNA for mm-wave applications . [Internet] [Masters thesis]. University of Pretoria; 2012. [cited 2019 Mar 25]. Available from: http://upetd.up.ac.za/thesis/available/etd-02012012-115339/.

Council of Science Editors:

author] [. A SiGe BiCMOS LNA for mm-wave applications . [Masters Thesis]. University of Pretoria; 2012. Available from: http://upetd.up.ac.za/thesis/available/etd-02012012-115339/


University of Pretoria

26. [No author]. Phase noise reduction of a 0.35 μm BiCMOS SiGe 5 GHz Voltage Controlled Oscillator .

Degree: 2010, University of Pretoria

 The research conducted in this dissertation studies the issues regarding the improvement of phase noise performance in a BiCMOS Silicon Germanium (SiGe) cross-coupled differential-pair voltage… (more)

Subjects/Keywords: Phase noise; Voltage controlled oscillator (VCO); Silicon Germanium (SiGe); Single sideband (SSB); Bipolar CMOS (BiCMOS); Performance trade-offs; LC oscillator; Narrowband; Active circuit; Analogue integrated circuit (IC); Heterojunction bipolar transistor (HBT); Tail-current suppression; UCTD

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APA (6th Edition):

author], [. (2010). Phase noise reduction of a 0.35 μm BiCMOS SiGe 5 GHz Voltage Controlled Oscillator . (Masters Thesis). University of Pretoria. Retrieved from http://upetd.up.ac.za/thesis/available/etd-11112009-190546/

Chicago Manual of Style (16th Edition):

author], [No. “Phase noise reduction of a 0.35 μm BiCMOS SiGe 5 GHz Voltage Controlled Oscillator .” 2010. Masters Thesis, University of Pretoria. Accessed March 25, 2019. http://upetd.up.ac.za/thesis/available/etd-11112009-190546/.

MLA Handbook (7th Edition):

author], [No. “Phase noise reduction of a 0.35 μm BiCMOS SiGe 5 GHz Voltage Controlled Oscillator .” 2010. Web. 25 Mar 2019.

Vancouver:

author] [. Phase noise reduction of a 0.35 μm BiCMOS SiGe 5 GHz Voltage Controlled Oscillator . [Internet] [Masters thesis]. University of Pretoria; 2010. [cited 2019 Mar 25]. Available from: http://upetd.up.ac.za/thesis/available/etd-11112009-190546/.

Council of Science Editors:

author] [. Phase noise reduction of a 0.35 μm BiCMOS SiGe 5 GHz Voltage Controlled Oscillator . [Masters Thesis]. University of Pretoria; 2010. Available from: http://upetd.up.ac.za/thesis/available/etd-11112009-190546/


Georgia Tech

27. Sutton, Akil Khamisi. Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 Hydrocarbon exploration, global navigation satellite systems, computed tomography, and aircraft avionics are just a few examples of applications that require system operation at an ambient… (more)

Subjects/Keywords: Bit error rate testing; Displacement damage; Heterojunction bipolar transistor; Radiation effects; Radiation hardening by design; Silicon germanium; Single event upset; Ionization; Heterojunctions; Bipolar transistors; Logic circuits; Radiation hardening; Hardness; Germanium compounds; Silicon compounds; Extreme environments

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APA (6th Edition):

Sutton, A. K. (2009). Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/29778

Chicago Manual of Style (16th Edition):

Sutton, Akil Khamisi. “Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits.” 2009. Doctoral Dissertation, Georgia Tech. Accessed March 25, 2019. http://hdl.handle.net/1853/29778.

MLA Handbook (7th Edition):

Sutton, Akil Khamisi. “Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits.” 2009. Web. 25 Mar 2019.

Vancouver:

Sutton AK. Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2019 Mar 25]. Available from: http://hdl.handle.net/1853/29778.

Council of Science Editors:

Sutton AK. Hardness assurance testing and radiation hardening by design techniques for silicon-germanium heterojunction bipolar transistors and digital logic circuits. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/29778


University of Pretoria

28. Janse van Rensburg, Christo. A SiGe BiCMOS LNA for mm-wave applications.

Degree: Electrical, Electronic and Computer Engineering, 2012, University of Pretoria

 A 5 GHz continuous unlicensed bandwidth is available at millimeter-wave (mm-wave) frequencies around 60 GHz and offers the prospect for multi gigabit wireless applications. The… (more)

Subjects/Keywords: Slow-wave cpw (S-CPW); Electromagnetic (EM) analysis; Transmission line; Coplanar waveguide (CPW); Low-noise amplifier (LNA); Bipolar cmos (BICMOS); Millimeter-wave (mm-wave); Silicon germanium (SIGE); Cascode amplifier; Impedance matching network (IMN); Heterojunction bipolar transistor (HBT); Integrated circuit (IC); UCTD

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APA (6th Edition):

Rensburg, Christo, J. v. (2012). A SiGe BiCMOS LNA for mm-wave applications. (Masters Thesis). University of Pretoria. Retrieved from http://hdl.handle.net/2263/26501

Chicago Manual of Style (16th Edition):

Rensburg, Christo, Janse van. “A SiGe BiCMOS LNA for mm-wave applications.” 2012. Masters Thesis, University of Pretoria. Accessed March 25, 2019. http://hdl.handle.net/2263/26501.

MLA Handbook (7th Edition):

Rensburg, Christo, Janse van. “A SiGe BiCMOS LNA for mm-wave applications.” 2012. Web. 25 Mar 2019.

Vancouver:

Rensburg, Christo Jv. A SiGe BiCMOS LNA for mm-wave applications. [Internet] [Masters thesis]. University of Pretoria; 2012. [cited 2019 Mar 25]. Available from: http://hdl.handle.net/2263/26501.

Council of Science Editors:

Rensburg, Christo Jv. A SiGe BiCMOS LNA for mm-wave applications. [Masters Thesis]. University of Pretoria; 2012. Available from: http://hdl.handle.net/2263/26501

29. Potéreau, Manuel. Contribution à la caractérisation de composants sub-terahertz : Contribution on the characterization of sub THz components.

Degree: Docteur es, Electronique, 2015, Bordeaux

La constante amélioration des technologies silicium permet aux transistors bipolaires à hétérojonction (HBT) SiGeC (Silicium-Germanium : Carbone) de concurrencer les composants III-V pour les applications… (more)

Subjects/Keywords: Transistor SiGeC; Mesures sous pointes; Calibrage; Épluchage; Paramètres S; 3D-TRL; Calibrage sur puce; Heterojunction bipolar; HBT; SiGeC transistor; On-wafer measurements; Calibration; De-embedding; S-parameters; 3D-TRL; On-wafer calibration

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APA (6th Edition):

Potéreau, M. (2015). Contribution à la caractérisation de composants sub-terahertz : Contribution on the characterization of sub THz components. (Doctoral Dissertation). Bordeaux. Retrieved from http://www.theses.fr/2015BORD0243

Chicago Manual of Style (16th Edition):

Potéreau, Manuel. “Contribution à la caractérisation de composants sub-terahertz : Contribution on the characterization of sub THz components.” 2015. Doctoral Dissertation, Bordeaux. Accessed March 25, 2019. http://www.theses.fr/2015BORD0243.

MLA Handbook (7th Edition):

Potéreau, Manuel. “Contribution à la caractérisation de composants sub-terahertz : Contribution on the characterization of sub THz components.” 2015. Web. 25 Mar 2019.

Vancouver:

Potéreau M. Contribution à la caractérisation de composants sub-terahertz : Contribution on the characterization of sub THz components. [Internet] [Doctoral dissertation]. Bordeaux; 2015. [cited 2019 Mar 25]. Available from: http://www.theses.fr/2015BORD0243.

Council of Science Editors:

Potéreau M. Contribution à la caractérisation de composants sub-terahertz : Contribution on the characterization of sub THz components. [Doctoral Dissertation]. Bordeaux; 2015. Available from: http://www.theses.fr/2015BORD0243


Université Paris-Sud – Paris XI

30. Ramirez-garcia, Eloy. Analyse expérimentale et modélisation du bruit haute fréquence des transistors bipolaires à hétérojonctions SiGe et InGaAs/InP pour les applications très hautes fréquences : Experimental analysis and modelling of high frequency noise in SiGe and InGaAs/InP heterojunction bipolar transistors for high frequency applications.

Degree: Docteur es, Physique, 2011, Université Paris-Sud – Paris XI

Le développement des technologies de communication et de l’information nécessite des composants semi-conducteurs ultrarapides et à faible niveau de bruit. Les transistors bipolaires à hétérojonction… (more)

Subjects/Keywords: Transistor bipolaire à hétérojonction; Hyperfréquences; Modélisation TCAD; Analyse cryogénique; Temps de transit; Mesures du bruit haute fréquence; Modélisation électrique du bruit haute fréquence; Heterojunction bipolar transistor; High frequency; TCAD modelling; Cryogenic analysis; Transit times; High frequency noise measurements; Electric noise modelling

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ramirez-garcia, E. (2011). Analyse expérimentale et modélisation du bruit haute fréquence des transistors bipolaires à hétérojonctions SiGe et InGaAs/InP pour les applications très hautes fréquences : Experimental analysis and modelling of high frequency noise in SiGe and InGaAs/InP heterojunction bipolar transistors for high frequency applications. (Doctoral Dissertation). Université Paris-Sud – Paris XI. Retrieved from http://www.theses.fr/2011PA112082

Chicago Manual of Style (16th Edition):

Ramirez-garcia, Eloy. “Analyse expérimentale et modélisation du bruit haute fréquence des transistors bipolaires à hétérojonctions SiGe et InGaAs/InP pour les applications très hautes fréquences : Experimental analysis and modelling of high frequency noise in SiGe and InGaAs/InP heterojunction bipolar transistors for high frequency applications.” 2011. Doctoral Dissertation, Université Paris-Sud – Paris XI. Accessed March 25, 2019. http://www.theses.fr/2011PA112082.

MLA Handbook (7th Edition):

Ramirez-garcia, Eloy. “Analyse expérimentale et modélisation du bruit haute fréquence des transistors bipolaires à hétérojonctions SiGe et InGaAs/InP pour les applications très hautes fréquences : Experimental analysis and modelling of high frequency noise in SiGe and InGaAs/InP heterojunction bipolar transistors for high frequency applications.” 2011. Web. 25 Mar 2019.

Vancouver:

Ramirez-garcia E. Analyse expérimentale et modélisation du bruit haute fréquence des transistors bipolaires à hétérojonctions SiGe et InGaAs/InP pour les applications très hautes fréquences : Experimental analysis and modelling of high frequency noise in SiGe and InGaAs/InP heterojunction bipolar transistors for high frequency applications. [Internet] [Doctoral dissertation]. Université Paris-Sud – Paris XI; 2011. [cited 2019 Mar 25]. Available from: http://www.theses.fr/2011PA112082.

Council of Science Editors:

Ramirez-garcia E. Analyse expérimentale et modélisation du bruit haute fréquence des transistors bipolaires à hétérojonctions SiGe et InGaAs/InP pour les applications très hautes fréquences : Experimental analysis and modelling of high frequency noise in SiGe and InGaAs/InP heterojunction bipolar transistors for high frequency applications. [Doctoral Dissertation]. Université Paris-Sud – Paris XI; 2011. Available from: http://www.theses.fr/2011PA112082

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