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You searched for subject:(Heteroepitaxy). Showing records 1 – 30 of 49 total matches.

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University of New Mexico

1. Sheng, Josephine. Empirical correlation of minority carrier lifetime to detect density profile in germanium on silicon heteroepitaxy.

Degree: Nanoscience and Microsystems, 2013, University of New Mexico

 High-quality Ge-on-Si (GoS) heterostructures are pursued for many applications, including near infrared (NIR) photodetectors and integration with III-V films for multi-junction photovoltaics. However, challenges such… (more)

Subjects/Keywords: Germanium; Heteroepitaxy; Minority Carrier Lifetime; Defect Density

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APA (6th Edition):

Sheng, J. (2013). Empirical correlation of minority carrier lifetime to detect density profile in germanium on silicon heteroepitaxy. (Doctoral Dissertation). University of New Mexico. Retrieved from http://hdl.handle.net/1928/23372

Chicago Manual of Style (16th Edition):

Sheng, Josephine. “Empirical correlation of minority carrier lifetime to detect density profile in germanium on silicon heteroepitaxy.” 2013. Doctoral Dissertation, University of New Mexico. Accessed December 12, 2019. http://hdl.handle.net/1928/23372.

MLA Handbook (7th Edition):

Sheng, Josephine. “Empirical correlation of minority carrier lifetime to detect density profile in germanium on silicon heteroepitaxy.” 2013. Web. 12 Dec 2019.

Vancouver:

Sheng J. Empirical correlation of minority carrier lifetime to detect density profile in germanium on silicon heteroepitaxy. [Internet] [Doctoral dissertation]. University of New Mexico; 2013. [cited 2019 Dec 12]. Available from: http://hdl.handle.net/1928/23372.

Council of Science Editors:

Sheng J. Empirical correlation of minority carrier lifetime to detect density profile in germanium on silicon heteroepitaxy. [Doctoral Dissertation]. University of New Mexico; 2013. Available from: http://hdl.handle.net/1928/23372


University of Canterbury

2. Chai, Jessica Hui Ju. Combining Zinc Oxide and Silver for Potential Optoelectronic Applications.

Degree: Electrical and Computer Engineering, 2010, University of Canterbury

 Semiconductors represent the enabling technology that underpins the many advances that define modern society. One semiconductor that shows considerable promise in the fabrication of new… (more)

Subjects/Keywords: molecular beam epitaxy; zinc oxide; silver; doping; superlens; heteroepitaxy; sputtering

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APA (6th Edition):

Chai, J. H. J. (2010). Combining Zinc Oxide and Silver for Potential Optoelectronic Applications. (Thesis). University of Canterbury. Retrieved from http://hdl.handle.net/10092/3529

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chai, Jessica Hui Ju. “Combining Zinc Oxide and Silver for Potential Optoelectronic Applications.” 2010. Thesis, University of Canterbury. Accessed December 12, 2019. http://hdl.handle.net/10092/3529.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chai, Jessica Hui Ju. “Combining Zinc Oxide and Silver for Potential Optoelectronic Applications.” 2010. Web. 12 Dec 2019.

Vancouver:

Chai JHJ. Combining Zinc Oxide and Silver for Potential Optoelectronic Applications. [Internet] [Thesis]. University of Canterbury; 2010. [cited 2019 Dec 12]. Available from: http://hdl.handle.net/10092/3529.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chai JHJ. Combining Zinc Oxide and Silver for Potential Optoelectronic Applications. [Thesis]. University of Canterbury; 2010. Available from: http://hdl.handle.net/10092/3529

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


UCLA

3. Reyner, Charles. GaSb-based Infrared Detectors on GaAs Substrates using an Interfacial Misfit Array.

Degree: Electrical Engineering, 2013, UCLA

 Infrared detectors based on compound semiconductor technology are on the verge of outperforming HgCdTe, the leading infrared material for the past 50 years. The driving… (more)

Subjects/Keywords: Electrical engineering; APD; GaSb; Heteroepitaxy; Molecular Beam Epitaxy

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APA (6th Edition):

Reyner, C. (2013). GaSb-based Infrared Detectors on GaAs Substrates using an Interfacial Misfit Array. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/16k9t7sc

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Reyner, Charles. “GaSb-based Infrared Detectors on GaAs Substrates using an Interfacial Misfit Array.” 2013. Thesis, UCLA. Accessed December 12, 2019. http://www.escholarship.org/uc/item/16k9t7sc.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Reyner, Charles. “GaSb-based Infrared Detectors on GaAs Substrates using an Interfacial Misfit Array.” 2013. Web. 12 Dec 2019.

Vancouver:

Reyner C. GaSb-based Infrared Detectors on GaAs Substrates using an Interfacial Misfit Array. [Internet] [Thesis]. UCLA; 2013. [cited 2019 Dec 12]. Available from: http://www.escholarship.org/uc/item/16k9t7sc.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Reyner C. GaSb-based Infrared Detectors on GaAs Substrates using an Interfacial Misfit Array. [Thesis]. UCLA; 2013. Available from: http://www.escholarship.org/uc/item/16k9t7sc

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. Guise, Aurore. Contribution à la compréhension de l'épitaxie du diamant élaboré par MPCVD assisté par polarisation sur silicium : étude de la réactivité du substrat et influence des étapes de prétraitement sur le dépôt : Contribution to the comprehension of BIAS assisted MPCVD diamond epitaxy on silicon : study of susbstrate reactivity and pretreatment stages influence on deposit.

Degree: Docteur es, Science et ingénierie des matériaux, 2008, Lorraine INP

Le but de cette étude est de mieux appréhender les phénomènes régissant l’épitaxie du diamant élaboré par MPCVD assisté pas polarisation sur silicium. Elle s’articule… (more)

Subjects/Keywords: MPCVD; Hétéroépitaxie; Silicium; Diamant; MPCV; Diamond; Heteroepitaxy; Silicon

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APA (6th Edition):

Guise, A. (2008). Contribution à la compréhension de l'épitaxie du diamant élaboré par MPCVD assisté par polarisation sur silicium : étude de la réactivité du substrat et influence des étapes de prétraitement sur le dépôt : Contribution to the comprehension of BIAS assisted MPCVD diamond epitaxy on silicon : study of susbstrate reactivity and pretreatment stages influence on deposit. (Doctoral Dissertation). Lorraine INP. Retrieved from http://www.theses.fr/2008INPL076N

Chicago Manual of Style (16th Edition):

Guise, Aurore. “Contribution à la compréhension de l'épitaxie du diamant élaboré par MPCVD assisté par polarisation sur silicium : étude de la réactivité du substrat et influence des étapes de prétraitement sur le dépôt : Contribution to the comprehension of BIAS assisted MPCVD diamond epitaxy on silicon : study of susbstrate reactivity and pretreatment stages influence on deposit.” 2008. Doctoral Dissertation, Lorraine INP. Accessed December 12, 2019. http://www.theses.fr/2008INPL076N.

MLA Handbook (7th Edition):

Guise, Aurore. “Contribution à la compréhension de l'épitaxie du diamant élaboré par MPCVD assisté par polarisation sur silicium : étude de la réactivité du substrat et influence des étapes de prétraitement sur le dépôt : Contribution to the comprehension of BIAS assisted MPCVD diamond epitaxy on silicon : study of susbstrate reactivity and pretreatment stages influence on deposit.” 2008. Web. 12 Dec 2019.

Vancouver:

Guise A. Contribution à la compréhension de l'épitaxie du diamant élaboré par MPCVD assisté par polarisation sur silicium : étude de la réactivité du substrat et influence des étapes de prétraitement sur le dépôt : Contribution to the comprehension of BIAS assisted MPCVD diamond epitaxy on silicon : study of susbstrate reactivity and pretreatment stages influence on deposit. [Internet] [Doctoral dissertation]. Lorraine INP; 2008. [cited 2019 Dec 12]. Available from: http://www.theses.fr/2008INPL076N.

Council of Science Editors:

Guise A. Contribution à la compréhension de l'épitaxie du diamant élaboré par MPCVD assisté par polarisation sur silicium : étude de la réactivité du substrat et influence des étapes de prétraitement sur le dépôt : Contribution to the comprehension of BIAS assisted MPCVD diamond epitaxy on silicon : study of susbstrate reactivity and pretreatment stages influence on deposit. [Doctoral Dissertation]. Lorraine INP; 2008. Available from: http://www.theses.fr/2008INPL076N


UCLA

5. Ren, Dingkun. Nanowire Optoelectronics at Infrared: Modeling, Epitaxy, and Devices.

Degree: Electrical Engineering, 2018, UCLA

 Bottom-up semiconductor nanowires and their arrays have been frequently highlighted as building blocks for next-generation optoelectronic devices. Compared with planar thin films, vertical nanowires have… (more)

Subjects/Keywords: Electrical engineering; Materials Science; Heteroepitaxy; Infrared; Nanowire; Optoelectronics; Photodetector; Semiconductor

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APA (6th Edition):

Ren, D. (2018). Nanowire Optoelectronics at Infrared: Modeling, Epitaxy, and Devices. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/5pf9b2wh

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ren, Dingkun. “Nanowire Optoelectronics at Infrared: Modeling, Epitaxy, and Devices.” 2018. Thesis, UCLA. Accessed December 12, 2019. http://www.escholarship.org/uc/item/5pf9b2wh.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ren, Dingkun. “Nanowire Optoelectronics at Infrared: Modeling, Epitaxy, and Devices.” 2018. Web. 12 Dec 2019.

Vancouver:

Ren D. Nanowire Optoelectronics at Infrared: Modeling, Epitaxy, and Devices. [Internet] [Thesis]. UCLA; 2018. [cited 2019 Dec 12]. Available from: http://www.escholarship.org/uc/item/5pf9b2wh.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ren D. Nanowire Optoelectronics at Infrared: Modeling, Epitaxy, and Devices. [Thesis]. UCLA; 2018. Available from: http://www.escholarship.org/uc/item/5pf9b2wh

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Sherbrooke

6. Bioud, Youcef Ataellah. Ingénierie de défauts liés à l’hétéroépitaxie de Ge sur Si: Substrats virtuels à base de germanium poreux pour le photovoltaïque .

Degree: 2018, Université de Sherbrooke

 L'électricité d'origine photovoltaïque constituera une composante majeure des apports énergétiques domestiques dans les prochaines décennies. Aujourd'hui et malgré des rendements records, le coût des cellules… (more)

Subjects/Keywords: Porous germanium; Electrochemistry of Semiconductors; Dislocations / voids; Virtual Substrates; Heteroepitaxy; Multi-junction solar cells; Photovoltaics

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APA (6th Edition):

Bioud, Y. A. (2018). Ingénierie de défauts liés à l’hétéroépitaxie de Ge sur Si: Substrats virtuels à base de germanium poreux pour le photovoltaïque . (Doctoral Dissertation). Université de Sherbrooke. Retrieved from http://hdl.handle.net/11143/14176

Chicago Manual of Style (16th Edition):

Bioud, Youcef Ataellah. “Ingénierie de défauts liés à l’hétéroépitaxie de Ge sur Si: Substrats virtuels à base de germanium poreux pour le photovoltaïque .” 2018. Doctoral Dissertation, Université de Sherbrooke. Accessed December 12, 2019. http://hdl.handle.net/11143/14176.

MLA Handbook (7th Edition):

Bioud, Youcef Ataellah. “Ingénierie de défauts liés à l’hétéroépitaxie de Ge sur Si: Substrats virtuels à base de germanium poreux pour le photovoltaïque .” 2018. Web. 12 Dec 2019.

Vancouver:

Bioud YA. Ingénierie de défauts liés à l’hétéroépitaxie de Ge sur Si: Substrats virtuels à base de germanium poreux pour le photovoltaïque . [Internet] [Doctoral dissertation]. Université de Sherbrooke; 2018. [cited 2019 Dec 12]. Available from: http://hdl.handle.net/11143/14176.

Council of Science Editors:

Bioud YA. Ingénierie de défauts liés à l’hétéroépitaxie de Ge sur Si: Substrats virtuels à base de germanium poreux pour le photovoltaïque . [Doctoral Dissertation]. Université de Sherbrooke; 2018. Available from: http://hdl.handle.net/11143/14176


Penn State University

7. Won, Dong Jin. MOCVD GROWTH OF GALLIUM NITRIDE WITH INDIUM SURFACTANT.

Degree: PhD, Materials Science and Engineering, 2010, Penn State University

 Indium can act as a surfactant on the growing GaN surface without being incorporated due to its high vapor pressure at growth temperatures of 900… (more)

Subjects/Keywords: GaN; AlN; nitrides; MOCVD; Indium surfactant; epitaxy; heteroepitaxy; XRD; PL; AFM; Raman

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APA (6th Edition):

Won, D. J. (2010). MOCVD GROWTH OF GALLIUM NITRIDE WITH INDIUM SURFACTANT. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/11516

Chicago Manual of Style (16th Edition):

Won, Dong Jin. “MOCVD GROWTH OF GALLIUM NITRIDE WITH INDIUM SURFACTANT.” 2010. Doctoral Dissertation, Penn State University. Accessed December 12, 2019. https://etda.libraries.psu.edu/catalog/11516.

MLA Handbook (7th Edition):

Won, Dong Jin. “MOCVD GROWTH OF GALLIUM NITRIDE WITH INDIUM SURFACTANT.” 2010. Web. 12 Dec 2019.

Vancouver:

Won DJ. MOCVD GROWTH OF GALLIUM NITRIDE WITH INDIUM SURFACTANT. [Internet] [Doctoral dissertation]. Penn State University; 2010. [cited 2019 Dec 12]. Available from: https://etda.libraries.psu.edu/catalog/11516.

Council of Science Editors:

Won DJ. MOCVD GROWTH OF GALLIUM NITRIDE WITH INDIUM SURFACTANT. [Doctoral Dissertation]. Penn State University; 2010. Available from: https://etda.libraries.psu.edu/catalog/11516

8. Mante, Nicolas. Hétéroépitaxie de GaN sur Si : De la nucléation à la relaxation des contraintes, étude par microscopie électronique en transmission : GaN heteroepitaxy on Si substrate : From nucleation to stress relaxation, transmission electron microscopy study.

Degree: Docteur es, Physique des matériaux, 2016, Grenoble Alpes

Ce travail est consacré à l'hétéroépitaxie de GaN sur substrat Si, étudié à l’échelle nanométrique par microscopie électronique en transmission. On étudie dans un premier… (more)

Subjects/Keywords: GaN; Microscopie; Dislocations; Contraintes; Heteroepitaxie; Led; GaN; Microscopy; Dislocations; Stress; Heteroepitaxy; Led; 530

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APA (6th Edition):

Mante, N. (2016). Hétéroépitaxie de GaN sur Si : De la nucléation à la relaxation des contraintes, étude par microscopie électronique en transmission : GaN heteroepitaxy on Si substrate : From nucleation to stress relaxation, transmission electron microscopy study. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2016GREAY078

Chicago Manual of Style (16th Edition):

Mante, Nicolas. “Hétéroépitaxie de GaN sur Si : De la nucléation à la relaxation des contraintes, étude par microscopie électronique en transmission : GaN heteroepitaxy on Si substrate : From nucleation to stress relaxation, transmission electron microscopy study.” 2016. Doctoral Dissertation, Grenoble Alpes. Accessed December 12, 2019. http://www.theses.fr/2016GREAY078.

MLA Handbook (7th Edition):

Mante, Nicolas. “Hétéroépitaxie de GaN sur Si : De la nucléation à la relaxation des contraintes, étude par microscopie électronique en transmission : GaN heteroepitaxy on Si substrate : From nucleation to stress relaxation, transmission electron microscopy study.” 2016. Web. 12 Dec 2019.

Vancouver:

Mante N. Hétéroépitaxie de GaN sur Si : De la nucléation à la relaxation des contraintes, étude par microscopie électronique en transmission : GaN heteroepitaxy on Si substrate : From nucleation to stress relaxation, transmission electron microscopy study. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2016. [cited 2019 Dec 12]. Available from: http://www.theses.fr/2016GREAY078.

Council of Science Editors:

Mante N. Hétéroépitaxie de GaN sur Si : De la nucléation à la relaxation des contraintes, étude par microscopie électronique en transmission : GaN heteroepitaxy on Si substrate : From nucleation to stress relaxation, transmission electron microscopy study. [Doctoral Dissertation]. Grenoble Alpes; 2016. Available from: http://www.theses.fr/2016GREAY078


McMaster University

9. Hosseini, Vajargah Shahrzad. Investigation of Interface, Defects, and Growth of GaSb/Si Heteroepitaxial Films using Aberration-Corrected Scanning Transmission Electron Microscopy.

Degree: PhD, 2013, McMaster University

Heteroepitaxial films of group III-antimonide-based semiconductor compounds on Si are amongst the most appealing candidates for solar applications because of the well-established Si platform… (more)

Subjects/Keywords: GaSb/Si; Interface; Defects; Heteroepitaxy; Abserration-corrected Scanning Transmission Electron Microscopy; HAADF-STEM

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APA (6th Edition):

Hosseini, V. S. (2013). Investigation of Interface, Defects, and Growth of GaSb/Si Heteroepitaxial Films using Aberration-Corrected Scanning Transmission Electron Microscopy. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/12846

Chicago Manual of Style (16th Edition):

Hosseini, Vajargah Shahrzad. “Investigation of Interface, Defects, and Growth of GaSb/Si Heteroepitaxial Films using Aberration-Corrected Scanning Transmission Electron Microscopy.” 2013. Doctoral Dissertation, McMaster University. Accessed December 12, 2019. http://hdl.handle.net/11375/12846.

MLA Handbook (7th Edition):

Hosseini, Vajargah Shahrzad. “Investigation of Interface, Defects, and Growth of GaSb/Si Heteroepitaxial Films using Aberration-Corrected Scanning Transmission Electron Microscopy.” 2013. Web. 12 Dec 2019.

Vancouver:

Hosseini VS. Investigation of Interface, Defects, and Growth of GaSb/Si Heteroepitaxial Films using Aberration-Corrected Scanning Transmission Electron Microscopy. [Internet] [Doctoral dissertation]. McMaster University; 2013. [cited 2019 Dec 12]. Available from: http://hdl.handle.net/11375/12846.

Council of Science Editors:

Hosseini VS. Investigation of Interface, Defects, and Growth of GaSb/Si Heteroepitaxial Films using Aberration-Corrected Scanning Transmission Electron Microscopy. [Doctoral Dissertation]. McMaster University; 2013. Available from: http://hdl.handle.net/11375/12846


McMaster University

10. Jovanovic, Stephen M. Pulsed Laser Heteroepitaxy of High Quality CdTe Thin Films on Sapphire Substrates.

Degree: MASc, 2013, McMaster University

The growth of CdTe thin films on Al2O3 (0001) substrates by pulsed laser deposition from undoped pressed powder targets was studied. Thin film crystal… (more)

Subjects/Keywords: Cadmium Telluride; Pulsed Laser Deposition; Heteroepitaxy; Semiconductor and Optical Materials; Semiconductor and Optical Materials

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APA (6th Edition):

Jovanovic, S. M. (2013). Pulsed Laser Heteroepitaxy of High Quality CdTe Thin Films on Sapphire Substrates. (Masters Thesis). McMaster University. Retrieved from http://hdl.handle.net/11375/12886

Chicago Manual of Style (16th Edition):

Jovanovic, Stephen M. “Pulsed Laser Heteroepitaxy of High Quality CdTe Thin Films on Sapphire Substrates.” 2013. Masters Thesis, McMaster University. Accessed December 12, 2019. http://hdl.handle.net/11375/12886.

MLA Handbook (7th Edition):

Jovanovic, Stephen M. “Pulsed Laser Heteroepitaxy of High Quality CdTe Thin Films on Sapphire Substrates.” 2013. Web. 12 Dec 2019.

Vancouver:

Jovanovic SM. Pulsed Laser Heteroepitaxy of High Quality CdTe Thin Films on Sapphire Substrates. [Internet] [Masters thesis]. McMaster University; 2013. [cited 2019 Dec 12]. Available from: http://hdl.handle.net/11375/12886.

Council of Science Editors:

Jovanovic SM. Pulsed Laser Heteroepitaxy of High Quality CdTe Thin Films on Sapphire Substrates. [Masters Thesis]. McMaster University; 2013. Available from: http://hdl.handle.net/11375/12886

11. Liu, Kailang. Fabrication and modeling of SiGe Nanostructures Driven by Hetero-epitaxial Elasticity : Fabrication et modélisation de nanostructures SIGe guidées par l' élasticité hétéro-épitaxiale.

Degree: Docteur es, Matière condensée et Nanosciences, 2016, Ecole centrale de Marseille

 Nous étudions ici l’heteroepitaxie du silicium-germanium (SiGe), un système qui est couramment considéré comme le stéréotype de l’´épitaxie des semi-conducteurs. Bien que ce système ait… (more)

Subjects/Keywords: Heteroepitaxie; Silicium germanium; Nucléation; Boites quantiques; Heteroepitaxy; Silicium germanium; Nucleation; Quantum Dots

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APA (6th Edition):

Liu, K. (2016). Fabrication and modeling of SiGe Nanostructures Driven by Hetero-epitaxial Elasticity : Fabrication et modélisation de nanostructures SIGe guidées par l' élasticité hétéro-épitaxiale. (Doctoral Dissertation). Ecole centrale de Marseille. Retrieved from http://www.theses.fr/2016ECDM0014

Chicago Manual of Style (16th Edition):

Liu, Kailang. “Fabrication and modeling of SiGe Nanostructures Driven by Hetero-epitaxial Elasticity : Fabrication et modélisation de nanostructures SIGe guidées par l' élasticité hétéro-épitaxiale.” 2016. Doctoral Dissertation, Ecole centrale de Marseille. Accessed December 12, 2019. http://www.theses.fr/2016ECDM0014.

MLA Handbook (7th Edition):

Liu, Kailang. “Fabrication and modeling of SiGe Nanostructures Driven by Hetero-epitaxial Elasticity : Fabrication et modélisation de nanostructures SIGe guidées par l' élasticité hétéro-épitaxiale.” 2016. Web. 12 Dec 2019.

Vancouver:

Liu K. Fabrication and modeling of SiGe Nanostructures Driven by Hetero-epitaxial Elasticity : Fabrication et modélisation de nanostructures SIGe guidées par l' élasticité hétéro-épitaxiale. [Internet] [Doctoral dissertation]. Ecole centrale de Marseille; 2016. [cited 2019 Dec 12]. Available from: http://www.theses.fr/2016ECDM0014.

Council of Science Editors:

Liu K. Fabrication and modeling of SiGe Nanostructures Driven by Hetero-epitaxial Elasticity : Fabrication et modélisation de nanostructures SIGe guidées par l' élasticité hétéro-épitaxiale. [Doctoral Dissertation]. Ecole centrale de Marseille; 2016. Available from: http://www.theses.fr/2016ECDM0014


University of New Mexico

12. Leonhardt, Darin. Selective epitaxial growth techniques to integrate high-quality germanium on silicon.

Degree: Chemical and Biological Engineering, 2011, University of New Mexico

 High-quality Ge-on-Si heterostructures have been actively pursued for many advanced applications, including near-infrared photodetectors, high-mobility field effect transistors, and virtual substrates for integrating III-V multijunction… (more)

Subjects/Keywords: Heteroepitaxy; Germanium; Silicon; Selective Growth; Electronic Materials; Molecular beam epitaxy.; Germanium crystals – Growth.

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APA (6th Edition):

Leonhardt, D. (2011). Selective epitaxial growth techniques to integrate high-quality germanium on silicon. (Doctoral Dissertation). University of New Mexico. Retrieved from http://hdl.handle.net/1928/12863

Chicago Manual of Style (16th Edition):

Leonhardt, Darin. “Selective epitaxial growth techniques to integrate high-quality germanium on silicon.” 2011. Doctoral Dissertation, University of New Mexico. Accessed December 12, 2019. http://hdl.handle.net/1928/12863.

MLA Handbook (7th Edition):

Leonhardt, Darin. “Selective epitaxial growth techniques to integrate high-quality germanium on silicon.” 2011. Web. 12 Dec 2019.

Vancouver:

Leonhardt D. Selective epitaxial growth techniques to integrate high-quality germanium on silicon. [Internet] [Doctoral dissertation]. University of New Mexico; 2011. [cited 2019 Dec 12]. Available from: http://hdl.handle.net/1928/12863.

Council of Science Editors:

Leonhardt D. Selective epitaxial growth techniques to integrate high-quality germanium on silicon. [Doctoral Dissertation]. University of New Mexico; 2011. Available from: http://hdl.handle.net/1928/12863


University of Minnesota

13. Jeong, SeongHo. Thin zinc oxide and cuprous oxide films for photovoltaic applications.

Degree: PhD, Material Science and Engineering, 2010, University of Minnesota

 Metal oxide semiconductors and heterojunctions made from thin films of metal oxide semiconductors have broad range of functional properties and high potential in optical, electrical… (more)

Subjects/Keywords: Cu2O; Heteroepitaxy; MOCVD; Solar cells; Thin film; ZnO; Material Science and Engineering

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APA (6th Edition):

Jeong, S. (2010). Thin zinc oxide and cuprous oxide films for photovoltaic applications. (Doctoral Dissertation). University of Minnesota. Retrieved from http://purl.umn.edu/96486

Chicago Manual of Style (16th Edition):

Jeong, SeongHo. “Thin zinc oxide and cuprous oxide films for photovoltaic applications.” 2010. Doctoral Dissertation, University of Minnesota. Accessed December 12, 2019. http://purl.umn.edu/96486.

MLA Handbook (7th Edition):

Jeong, SeongHo. “Thin zinc oxide and cuprous oxide films for photovoltaic applications.” 2010. Web. 12 Dec 2019.

Vancouver:

Jeong S. Thin zinc oxide and cuprous oxide films for photovoltaic applications. [Internet] [Doctoral dissertation]. University of Minnesota; 2010. [cited 2019 Dec 12]. Available from: http://purl.umn.edu/96486.

Council of Science Editors:

Jeong S. Thin zinc oxide and cuprous oxide films for photovoltaic applications. [Doctoral Dissertation]. University of Minnesota; 2010. Available from: http://purl.umn.edu/96486


North Carolina State University

14. Pant, Punam. Thin Film Epitaxy, Defects and Interfaces in GaN/Sapphire and ZnO/Sapphire Heterostructures (Polar and Non-polar) for Light Emitting Diodes.

Degree: PhD, Materials Science and Engineering, 2010, North Carolina State University

 There are three sources of strain in heteroepitaxial growth, lattice misfit; thermal misfit; and growth related defects. The primary aim of the present work was… (more)

Subjects/Keywords: Pulsed Laser Deposition; GaN; ZnO; isotropic and anisotropic strain in thin films; Heteroepitaxy

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APA (6th Edition):

Pant, P. (2010). Thin Film Epitaxy, Defects and Interfaces in GaN/Sapphire and ZnO/Sapphire Heterostructures (Polar and Non-polar) for Light Emitting Diodes. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3357

Chicago Manual of Style (16th Edition):

Pant, Punam. “Thin Film Epitaxy, Defects and Interfaces in GaN/Sapphire and ZnO/Sapphire Heterostructures (Polar and Non-polar) for Light Emitting Diodes.” 2010. Doctoral Dissertation, North Carolina State University. Accessed December 12, 2019. http://www.lib.ncsu.edu/resolver/1840.16/3357.

MLA Handbook (7th Edition):

Pant, Punam. “Thin Film Epitaxy, Defects and Interfaces in GaN/Sapphire and ZnO/Sapphire Heterostructures (Polar and Non-polar) for Light Emitting Diodes.” 2010. Web. 12 Dec 2019.

Vancouver:

Pant P. Thin Film Epitaxy, Defects and Interfaces in GaN/Sapphire and ZnO/Sapphire Heterostructures (Polar and Non-polar) for Light Emitting Diodes. [Internet] [Doctoral dissertation]. North Carolina State University; 2010. [cited 2019 Dec 12]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3357.

Council of Science Editors:

Pant P. Thin Film Epitaxy, Defects and Interfaces in GaN/Sapphire and ZnO/Sapphire Heterostructures (Polar and Non-polar) for Light Emitting Diodes. [Doctoral Dissertation]. North Carolina State University; 2010. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3357


North Carolina State University

15. Liu, Xiang. Heteroepitaxy and Properties of III-V Materials Grown on Nanoscopically Roughened (001) Si.

Degree: PhD, Physics, 2008, North Carolina State University

 Polar-on-nonpolar heteroepitaxy of mainly III-V materials on Si by organometallic chemical vapor deposition (OMCVD) has attracted much interest due to its potential technological importance. The… (more)

Subjects/Keywords: Silicon; Heteroepitaxy; OMCVD; nanoscopic roughness; GaP

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APA (6th Edition):

Liu, X. (2008). Heteroepitaxy and Properties of III-V Materials Grown on Nanoscopically Roughened (001) Si. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4520

Chicago Manual of Style (16th Edition):

Liu, Xiang. “Heteroepitaxy and Properties of III-V Materials Grown on Nanoscopically Roughened (001) Si.” 2008. Doctoral Dissertation, North Carolina State University. Accessed December 12, 2019. http://www.lib.ncsu.edu/resolver/1840.16/4520.

MLA Handbook (7th Edition):

Liu, Xiang. “Heteroepitaxy and Properties of III-V Materials Grown on Nanoscopically Roughened (001) Si.” 2008. Web. 12 Dec 2019.

Vancouver:

Liu X. Heteroepitaxy and Properties of III-V Materials Grown on Nanoscopically Roughened (001) Si. [Internet] [Doctoral dissertation]. North Carolina State University; 2008. [cited 2019 Dec 12]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4520.

Council of Science Editors:

Liu X. Heteroepitaxy and Properties of III-V Materials Grown on Nanoscopically Roughened (001) Si. [Doctoral Dissertation]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4520

16. Cipro, Romain. Epitaxie en phase vapeur aux organométalliques et caractérisation de semi-conducteur III-As sur substrat silicium dans une plateforme microélectronique : Metalorganic vapour phase epitaxy and characterization of III-As semiconductors on silicon substrate in a microelectronic platform.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2016, Grenoble Alpes

Les dispositifs microélectroniques réalisés en technologie silicium possèdent des limitations intrinsèques liées à ce matériau et ses dérivés (Si, SiO2, SiGe…). Une des solutions pour… (more)

Subjects/Keywords: Hétéroépitaxie; Arseniures; Iii-V; Parois d'antiphase; Puits quantiques; Mocvd; Heteroepitaxy; Arsenides; Iii-V; Antiphase boundaries; Quantum wells; Mocvd; 620

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APA (6th Edition):

Cipro, R. (2016). Epitaxie en phase vapeur aux organométalliques et caractérisation de semi-conducteur III-As sur substrat silicium dans une plateforme microélectronique : Metalorganic vapour phase epitaxy and characterization of III-As semiconductors on silicon substrate in a microelectronic platform. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2016GREAT049

Chicago Manual of Style (16th Edition):

Cipro, Romain. “Epitaxie en phase vapeur aux organométalliques et caractérisation de semi-conducteur III-As sur substrat silicium dans une plateforme microélectronique : Metalorganic vapour phase epitaxy and characterization of III-As semiconductors on silicon substrate in a microelectronic platform.” 2016. Doctoral Dissertation, Grenoble Alpes. Accessed December 12, 2019. http://www.theses.fr/2016GREAT049.

MLA Handbook (7th Edition):

Cipro, Romain. “Epitaxie en phase vapeur aux organométalliques et caractérisation de semi-conducteur III-As sur substrat silicium dans une plateforme microélectronique : Metalorganic vapour phase epitaxy and characterization of III-As semiconductors on silicon substrate in a microelectronic platform.” 2016. Web. 12 Dec 2019.

Vancouver:

Cipro R. Epitaxie en phase vapeur aux organométalliques et caractérisation de semi-conducteur III-As sur substrat silicium dans une plateforme microélectronique : Metalorganic vapour phase epitaxy and characterization of III-As semiconductors on silicon substrate in a microelectronic platform. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2016. [cited 2019 Dec 12]. Available from: http://www.theses.fr/2016GREAT049.

Council of Science Editors:

Cipro R. Epitaxie en phase vapeur aux organométalliques et caractérisation de semi-conducteur III-As sur substrat silicium dans une plateforme microélectronique : Metalorganic vapour phase epitaxy and characterization of III-As semiconductors on silicon substrate in a microelectronic platform. [Doctoral Dissertation]. Grenoble Alpes; 2016. Available from: http://www.theses.fr/2016GREAT049

17. Alcotte, Reynald. Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Grenoble Alpes

Avec l’avènement de l’internet des objets, la diversification des moyens de communication et l’augmentation de la puissance de calcul des processeurs, les besoins en termes… (more)

Subjects/Keywords: Hétéroépitaxie; Semiconducteurs III-V; Silicium; Arséniures; Mocvd; Résistivité de contact; Heteroepitaxy; Semiconductors III-V; Silicon; Arsenides; Mocvd; Contact resistivity; 620

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APA (6th Edition):

Alcotte, R. (2018). Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAT005

Chicago Manual of Style (16th Edition):

Alcotte, Reynald. “Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon.” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed December 12, 2019. http://www.theses.fr/2018GREAT005.

MLA Handbook (7th Edition):

Alcotte, Reynald. “Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon.” 2018. Web. 12 Dec 2019.

Vancouver:

Alcotte R. Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2019 Dec 12]. Available from: http://www.theses.fr/2018GREAT005.

Council of Science Editors:

Alcotte R. Epitaxie en phase vapeur aux organométalliques de semiconducteurs III-As sur substrat silicium et formation de contacts ohmiques pour les applications photoniques et RF sur silicium : Metalorganic vapour phase epitaxy of III-As semiconductors on silicon substrate and formation of ohmic contacts for photonic and radiofrequency applications on silicon. [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAT005

18. Sarrieu, Cyril. Elaboration de diamant CVD épitaxié sur silicium : caractérisations physico-chimiques et structurales des premiers stades, optimisation de l’interface : Elaboration of epitaxial CVD diamond on silicon : physicochemical and structural characterizations, optimization of the interface.

Degree: Docteur es, Sciences des matériaux, 2011, Lorraine INP

Le diamant est un semi-conducteur à grande bande interdite extrêmement prometteur, notamment en électronique et en radiodétection. Notre étude s’intéresse à la production de films… (more)

Subjects/Keywords: Diamant; Hétéroépitaxie; MPCVD; BEN; Silicium; RHEED; XPS; Diamond; Heteroepitaxy; MPCVD; BEN; Silicon; Silicon carbide; RHEED; XPS; 620

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APA (6th Edition):

Sarrieu, C. (2011). Elaboration de diamant CVD épitaxié sur silicium : caractérisations physico-chimiques et structurales des premiers stades, optimisation de l’interface : Elaboration of epitaxial CVD diamond on silicon : physicochemical and structural characterizations, optimization of the interface. (Doctoral Dissertation). Lorraine INP. Retrieved from http://www.theses.fr/2011INPL093N

Chicago Manual of Style (16th Edition):

Sarrieu, Cyril. “Elaboration de diamant CVD épitaxié sur silicium : caractérisations physico-chimiques et structurales des premiers stades, optimisation de l’interface : Elaboration of epitaxial CVD diamond on silicon : physicochemical and structural characterizations, optimization of the interface.” 2011. Doctoral Dissertation, Lorraine INP. Accessed December 12, 2019. http://www.theses.fr/2011INPL093N.

MLA Handbook (7th Edition):

Sarrieu, Cyril. “Elaboration de diamant CVD épitaxié sur silicium : caractérisations physico-chimiques et structurales des premiers stades, optimisation de l’interface : Elaboration of epitaxial CVD diamond on silicon : physicochemical and structural characterizations, optimization of the interface.” 2011. Web. 12 Dec 2019.

Vancouver:

Sarrieu C. Elaboration de diamant CVD épitaxié sur silicium : caractérisations physico-chimiques et structurales des premiers stades, optimisation de l’interface : Elaboration of epitaxial CVD diamond on silicon : physicochemical and structural characterizations, optimization of the interface. [Internet] [Doctoral dissertation]. Lorraine INP; 2011. [cited 2019 Dec 12]. Available from: http://www.theses.fr/2011INPL093N.

Council of Science Editors:

Sarrieu C. Elaboration de diamant CVD épitaxié sur silicium : caractérisations physico-chimiques et structurales des premiers stades, optimisation de l’interface : Elaboration of epitaxial CVD diamond on silicon : physicochemical and structural characterizations, optimization of the interface. [Doctoral Dissertation]. Lorraine INP; 2011. Available from: http://www.theses.fr/2011INPL093N

19. Vaissière, Nicolas. Synthèse de films de diamant de haute qualité cristalline pour la réalisation de dosimètres pour la radiothérapie : Synthesis of high quality diamond film for the dosimeter realization in the radiotherapy domain.

Degree: Docteur es, Sciences physiques - Chimie, 2014, Cachan, Ecole normale supérieure

Cette thèse vise à maitriser la synthèse MPCVD de films hétéroépitaxiés de diamant de haute qualité cristalline sur substrat d’iridium pour la réalisation de dosimètres… (more)

Subjects/Keywords: Diamant; Hétéroépitaxie; CVD; Surface; Iridium; XPS; XRD; MEB; Détection; Diamond; Heteroepitaxy; CVD; Surface; Iridium; XPS; XRD; SEM; Detection

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APA (6th Edition):

Vaissière, N. (2014). Synthèse de films de diamant de haute qualité cristalline pour la réalisation de dosimètres pour la radiothérapie : Synthesis of high quality diamond film for the dosimeter realization in the radiotherapy domain. (Doctoral Dissertation). Cachan, Ecole normale supérieure. Retrieved from http://www.theses.fr/2014DENS0008

Chicago Manual of Style (16th Edition):

Vaissière, Nicolas. “Synthèse de films de diamant de haute qualité cristalline pour la réalisation de dosimètres pour la radiothérapie : Synthesis of high quality diamond film for the dosimeter realization in the radiotherapy domain.” 2014. Doctoral Dissertation, Cachan, Ecole normale supérieure. Accessed December 12, 2019. http://www.theses.fr/2014DENS0008.

MLA Handbook (7th Edition):

Vaissière, Nicolas. “Synthèse de films de diamant de haute qualité cristalline pour la réalisation de dosimètres pour la radiothérapie : Synthesis of high quality diamond film for the dosimeter realization in the radiotherapy domain.” 2014. Web. 12 Dec 2019.

Vancouver:

Vaissière N. Synthèse de films de diamant de haute qualité cristalline pour la réalisation de dosimètres pour la radiothérapie : Synthesis of high quality diamond film for the dosimeter realization in the radiotherapy domain. [Internet] [Doctoral dissertation]. Cachan, Ecole normale supérieure; 2014. [cited 2019 Dec 12]. Available from: http://www.theses.fr/2014DENS0008.

Council of Science Editors:

Vaissière N. Synthèse de films de diamant de haute qualité cristalline pour la réalisation de dosimètres pour la radiothérapie : Synthesis of high quality diamond film for the dosimeter realization in the radiotherapy domain. [Doctoral Dissertation]. Cachan, Ecole normale supérieure; 2014. Available from: http://www.theses.fr/2014DENS0008


McMaster University

20. Scullion, Andrew. Growth, Characterization and Simulation of InAs Quantum Wires on Vicinal Substrates.

Degree: MMatSE, 2013, McMaster University

The heteroepitaxial growth of InAs self-assembled quantum wires on vicinal substrates is investigated. InGaAlAs lattice-matched to InP was first deposited onto an InP(001) substrate… (more)

Subjects/Keywords: quantum wires; heteroepitaxy; vicinal; off-cut; kinetic Monte Carlo; simulation; Semiconductor and Optical Materials; Semiconductor and Optical Materials

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APA (6th Edition):

Scullion, A. (2013). Growth, Characterization and Simulation of InAs Quantum Wires on Vicinal Substrates. (Masters Thesis). McMaster University. Retrieved from http://hdl.handle.net/11375/13635

Chicago Manual of Style (16th Edition):

Scullion, Andrew. “Growth, Characterization and Simulation of InAs Quantum Wires on Vicinal Substrates.” 2013. Masters Thesis, McMaster University. Accessed December 12, 2019. http://hdl.handle.net/11375/13635.

MLA Handbook (7th Edition):

Scullion, Andrew. “Growth, Characterization and Simulation of InAs Quantum Wires on Vicinal Substrates.” 2013. Web. 12 Dec 2019.

Vancouver:

Scullion A. Growth, Characterization and Simulation of InAs Quantum Wires on Vicinal Substrates. [Internet] [Masters thesis]. McMaster University; 2013. [cited 2019 Dec 12]. Available from: http://hdl.handle.net/11375/13635.

Council of Science Editors:

Scullion A. Growth, Characterization and Simulation of InAs Quantum Wires on Vicinal Substrates. [Masters Thesis]. McMaster University; 2013. Available from: http://hdl.handle.net/11375/13635

21. KWADWO KONADU ANSAH-ANTWI. GAN-ON- SI(100) NANOSTRUCTURES FOR OPTOELECTRONICS APPLICATIONS.

Degree: 2015, National University of Singapore

Subjects/Keywords: GaN; Heteroepitaxy; Surface modification; Anisotropic etching; Dislocations; Crystallographic tilt

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APA (6th Edition):

ANSAH-ANTWI, K. K. (2015). GAN-ON- SI(100) NANOSTRUCTURES FOR OPTOELECTRONICS APPLICATIONS. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/120109

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

ANSAH-ANTWI, KWADWO KONADU. “GAN-ON- SI(100) NANOSTRUCTURES FOR OPTOELECTRONICS APPLICATIONS.” 2015. Thesis, National University of Singapore. Accessed December 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/120109.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

ANSAH-ANTWI, KWADWO KONADU. “GAN-ON- SI(100) NANOSTRUCTURES FOR OPTOELECTRONICS APPLICATIONS.” 2015. Web. 12 Dec 2019.

Vancouver:

ANSAH-ANTWI KK. GAN-ON- SI(100) NANOSTRUCTURES FOR OPTOELECTRONICS APPLICATIONS. [Internet] [Thesis]. National University of Singapore; 2015. [cited 2019 Dec 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/120109.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

ANSAH-ANTWI KK. GAN-ON- SI(100) NANOSTRUCTURES FOR OPTOELECTRONICS APPLICATIONS. [Thesis]. National University of Singapore; 2015. Available from: http://scholarbank.nus.edu.sg/handle/10635/120109

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Connecticut

22. cheruku, sushma. Lattice Relaxation by Plastic Flow and Study of Apparent Critical Layer Thickness in II-VI/GaAs(001) Heterostructures.

Degree: MS, Electrical Engineering, 2011, University of Connecticut

  This thesis describes a generalized model for lattice relaxation by plastic flow in semiconductor heterostructures. It is applicable to graded and multilayered structures, allows… (more)

Subjects/Keywords: Heteroepitaxy; Molecular Beam Epitaxy; ZnSe; GaAs; Equilibrium Models; Thermal Strain; Thermal Expansion Coefficients; Plastic Flow Models; Apparent Critical Layer Thickness

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APA (6th Edition):

cheruku, s. (2011). Lattice Relaxation by Plastic Flow and Study of Apparent Critical Layer Thickness in II-VI/GaAs(001) Heterostructures. (Masters Thesis). University of Connecticut. Retrieved from https://opencommons.uconn.edu/gs_theses/210

Chicago Manual of Style (16th Edition):

cheruku, sushma. “Lattice Relaxation by Plastic Flow and Study of Apparent Critical Layer Thickness in II-VI/GaAs(001) Heterostructures.” 2011. Masters Thesis, University of Connecticut. Accessed December 12, 2019. https://opencommons.uconn.edu/gs_theses/210.

MLA Handbook (7th Edition):

cheruku, sushma. “Lattice Relaxation by Plastic Flow and Study of Apparent Critical Layer Thickness in II-VI/GaAs(001) Heterostructures.” 2011. Web. 12 Dec 2019.

Vancouver:

cheruku s. Lattice Relaxation by Plastic Flow and Study of Apparent Critical Layer Thickness in II-VI/GaAs(001) Heterostructures. [Internet] [Masters thesis]. University of Connecticut; 2011. [cited 2019 Dec 12]. Available from: https://opencommons.uconn.edu/gs_theses/210.

Council of Science Editors:

cheruku s. Lattice Relaxation by Plastic Flow and Study of Apparent Critical Layer Thickness in II-VI/GaAs(001) Heterostructures. [Masters Thesis]. University of Connecticut; 2011. Available from: https://opencommons.uconn.edu/gs_theses/210


North Carolina State University

23. Rawdanowicz, Thomas Adolph. Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon.

Degree: PhD, Materials Science and Engineering, 2006, North Carolina State University

 The principal goal of this research was the investigation and process development of epitaxial growth mechanisms for the direct depositions of heteroepitaxial GaN thin films… (more)

Subjects/Keywords: Silicon substrate; Si(111) heteroepitaxy; Laser MBE; GaN; AlN

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APA (6th Edition):

Rawdanowicz, T. A. (2006). Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5925

Chicago Manual of Style (16th Edition):

Rawdanowicz, Thomas Adolph. “Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon.” 2006. Doctoral Dissertation, North Carolina State University. Accessed December 12, 2019. http://www.lib.ncsu.edu/resolver/1840.16/5925.

MLA Handbook (7th Edition):

Rawdanowicz, Thomas Adolph. “Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon.” 2006. Web. 12 Dec 2019.

Vancouver:

Rawdanowicz TA. Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon. [Internet] [Doctoral dissertation]. North Carolina State University; 2006. [cited 2019 Dec 12]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5925.

Council of Science Editors:

Rawdanowicz TA. Laser Molecular Beam Epitaxial Growth and Properties of III-Nitride Thin Film Heterostructures on Silicon. [Doctoral Dissertation]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5925

24. Fouquat, Louise. Etude par photoémission d’interfaces métal / oxyde et métal / semiconducteur élaborées par épitaxie par jets moléculaires : Photoemission study of metal / oxide and metal / semiconductor interfaces grown by molecular beam epitaxy.

Degree: Docteur es, Physique des matériaux, 2018, Lyon

La recherche d’une miniaturisation toujours plus poussée des dispositifs en micro- et opto- électronique a participé au développement des nanotechnologies. A l’échelle nanométrique, la densité… (more)

Subjects/Keywords: Photoémission; Hétéroépitaxie; Interfaces; Nanofils; Silicium; Phase Zintl; Semiconducteur III-V; Photoemission; Heteroepitaxy; Interfaces; Nanowires; MBE; Silicon; III-V semiconductors; Zintl phase

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APA (6th Edition):

Fouquat, L. (2018). Etude par photoémission d’interfaces métal / oxyde et métal / semiconducteur élaborées par épitaxie par jets moléculaires : Photoemission study of metal / oxide and metal / semiconductor interfaces grown by molecular beam epitaxy. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2018LYSEC045

Chicago Manual of Style (16th Edition):

Fouquat, Louise. “Etude par photoémission d’interfaces métal / oxyde et métal / semiconducteur élaborées par épitaxie par jets moléculaires : Photoemission study of metal / oxide and metal / semiconductor interfaces grown by molecular beam epitaxy.” 2018. Doctoral Dissertation, Lyon. Accessed December 12, 2019. http://www.theses.fr/2018LYSEC045.

MLA Handbook (7th Edition):

Fouquat, Louise. “Etude par photoémission d’interfaces métal / oxyde et métal / semiconducteur élaborées par épitaxie par jets moléculaires : Photoemission study of metal / oxide and metal / semiconductor interfaces grown by molecular beam epitaxy.” 2018. Web. 12 Dec 2019.

Vancouver:

Fouquat L. Etude par photoémission d’interfaces métal / oxyde et métal / semiconducteur élaborées par épitaxie par jets moléculaires : Photoemission study of metal / oxide and metal / semiconductor interfaces grown by molecular beam epitaxy. [Internet] [Doctoral dissertation]. Lyon; 2018. [cited 2019 Dec 12]. Available from: http://www.theses.fr/2018LYSEC045.

Council of Science Editors:

Fouquat L. Etude par photoémission d’interfaces métal / oxyde et métal / semiconducteur élaborées par épitaxie par jets moléculaires : Photoemission study of metal / oxide and metal / semiconductor interfaces grown by molecular beam epitaxy. [Doctoral Dissertation]. Lyon; 2018. Available from: http://www.theses.fr/2018LYSEC045

25. Schifani, Guido. Forme et dynamique de boîtes quantiques sous contraintes élastiques : Shape and dynamics of elastically strained quantum dots.

Degree: Docteur es, Physique, 2018, Côte d'Azur

Le but de cette thèse est l'étude théorique de la dynamique du murissement des boites quantiques auto-organisées. Pour cela, nous déduisons en utilisant les outils… (more)

Subjects/Keywords: Boîtes quantiques; Hétéro-épitaxie; Contraintes élastiques; Analyse non-linéaire; Nanostructures; Semiconducteur; Quantum dots; Heteroepitaxy; Elastic stresses; Non-linear analysis; Nanostructures; Semiconductors

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APA (6th Edition):

Schifani, G. (2018). Forme et dynamique de boîtes quantiques sous contraintes élastiques : Shape and dynamics of elastically strained quantum dots. (Doctoral Dissertation). Côte d'Azur. Retrieved from http://www.theses.fr/2018AZUR4069

Chicago Manual of Style (16th Edition):

Schifani, Guido. “Forme et dynamique de boîtes quantiques sous contraintes élastiques : Shape and dynamics of elastically strained quantum dots.” 2018. Doctoral Dissertation, Côte d'Azur. Accessed December 12, 2019. http://www.theses.fr/2018AZUR4069.

MLA Handbook (7th Edition):

Schifani, Guido. “Forme et dynamique de boîtes quantiques sous contraintes élastiques : Shape and dynamics of elastically strained quantum dots.” 2018. Web. 12 Dec 2019.

Vancouver:

Schifani G. Forme et dynamique de boîtes quantiques sous contraintes élastiques : Shape and dynamics of elastically strained quantum dots. [Internet] [Doctoral dissertation]. Côte d'Azur; 2018. [cited 2019 Dec 12]. Available from: http://www.theses.fr/2018AZUR4069.

Council of Science Editors:

Schifani G. Forme et dynamique de boîtes quantiques sous contraintes élastiques : Shape and dynamics of elastically strained quantum dots. [Doctoral Dissertation]. Côte d'Azur; 2018. Available from: http://www.theses.fr/2018AZUR4069

26. Lee, Kee Han. Hétéroépitaxie de films de diamant sur Ir/SrTiO3/Si (001) : une voie prometteuse pour l’élargissement des substrats : Heteroepitaxy of diamond films on Ir/SrTiO3/Si (001) : a promising pathway towards substrate upscaling.

Degree: Docteur es, Physique, 2017, Paris Saclay

Le diamant monocristallin possède des propriétés électroniques, thermiques et optiques exceptionnelles. Ce matériau est un excellent candidat pour les applications en électronique de puissance, en… (more)

Subjects/Keywords: Hétéroépitaxie; Titanate de strontium (SrTiO3); Nucléation assistée par polarisation (BEN); Diamond; Heteroepitaxy; Iridium; Strontium titanate (SrTiO3); Bias Enhanced Nucleation (BEN)

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APA (6th Edition):

Lee, K. H. (2017). Hétéroépitaxie de films de diamant sur Ir/SrTiO3/Si (001) : une voie prometteuse pour l’élargissement des substrats : Heteroepitaxy of diamond films on Ir/SrTiO3/Si (001) : a promising pathway towards substrate upscaling. (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2017SACLN004

Chicago Manual of Style (16th Edition):

Lee, Kee Han. “Hétéroépitaxie de films de diamant sur Ir/SrTiO3/Si (001) : une voie prometteuse pour l’élargissement des substrats : Heteroepitaxy of diamond films on Ir/SrTiO3/Si (001) : a promising pathway towards substrate upscaling.” 2017. Doctoral Dissertation, Paris Saclay. Accessed December 12, 2019. http://www.theses.fr/2017SACLN004.

MLA Handbook (7th Edition):

Lee, Kee Han. “Hétéroépitaxie de films de diamant sur Ir/SrTiO3/Si (001) : une voie prometteuse pour l’élargissement des substrats : Heteroepitaxy of diamond films on Ir/SrTiO3/Si (001) : a promising pathway towards substrate upscaling.” 2017. Web. 12 Dec 2019.

Vancouver:

Lee KH. Hétéroépitaxie de films de diamant sur Ir/SrTiO3/Si (001) : une voie prometteuse pour l’élargissement des substrats : Heteroepitaxy of diamond films on Ir/SrTiO3/Si (001) : a promising pathway towards substrate upscaling. [Internet] [Doctoral dissertation]. Paris Saclay; 2017. [cited 2019 Dec 12]. Available from: http://www.theses.fr/2017SACLN004.

Council of Science Editors:

Lee KH. Hétéroépitaxie de films de diamant sur Ir/SrTiO3/Si (001) : une voie prometteuse pour l’élargissement des substrats : Heteroepitaxy of diamond films on Ir/SrTiO3/Si (001) : a promising pathway towards substrate upscaling. [Doctoral Dissertation]. Paris Saclay; 2017. Available from: http://www.theses.fr/2017SACLN004

27. Ramsey, James J. Exploration of the Use of the Kinetic Monte Carlo Method in Simulation of Quantum Dot Growth.

Degree: PhD, Civil Engineering, 2011, University of Akron

 The use of Kinetic Monte Carlo (KMC) simulations in modeling growth of quantum dots (QDs) on semiconductor surfaces is explored. The underlying theory of the… (more)

Subjects/Keywords: Nanotechnology; Physics; kinetic Monte Carlo; heteroepitaxy; quantum dot; qualitative

…2.11 Illustration of system modeled in off-lattice KMC simulation of heteroepitaxy of Biehl… 

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APA (6th Edition):

Ramsey, J. J. (2011). Exploration of the Use of the Kinetic Monte Carlo Method in Simulation of Quantum Dot Growth. (Doctoral Dissertation). University of Akron. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=akron1302092138

Chicago Manual of Style (16th Edition):

Ramsey, James J. “Exploration of the Use of the Kinetic Monte Carlo Method in Simulation of Quantum Dot Growth.” 2011. Doctoral Dissertation, University of Akron. Accessed December 12, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=akron1302092138.

MLA Handbook (7th Edition):

Ramsey, James J. “Exploration of the Use of the Kinetic Monte Carlo Method in Simulation of Quantum Dot Growth.” 2011. Web. 12 Dec 2019.

Vancouver:

Ramsey JJ. Exploration of the Use of the Kinetic Monte Carlo Method in Simulation of Quantum Dot Growth. [Internet] [Doctoral dissertation]. University of Akron; 2011. [cited 2019 Dec 12]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=akron1302092138.

Council of Science Editors:

Ramsey JJ. Exploration of the Use of the Kinetic Monte Carlo Method in Simulation of Quantum Dot Growth. [Doctoral Dissertation]. University of Akron; 2011. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=akron1302092138


Penn State University

28. Miron, Radu Alexandru. A journey across time scales: accelerated atomistic simulation of surface growth.

Degree: PhD, Physics, 2004, Penn State University

 A large class of temperature-activated physical and chemical phenomena occur via rare-event dynamics: relevant conformational changes are several orders of magnitude slower than the underlying… (more)

Subjects/Keywords: molecular dynamics; simulation; accelerated; surface; growth; heteroepitaxy; small barrier; parallel

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APA (6th Edition):

Miron, R. A. (2004). A journey across time scales: accelerated atomistic simulation of surface growth. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/6291

Chicago Manual of Style (16th Edition):

Miron, Radu Alexandru. “A journey across time scales: accelerated atomistic simulation of surface growth.” 2004. Doctoral Dissertation, Penn State University. Accessed December 12, 2019. https://etda.libraries.psu.edu/catalog/6291.

MLA Handbook (7th Edition):

Miron, Radu Alexandru. “A journey across time scales: accelerated atomistic simulation of surface growth.” 2004. Web. 12 Dec 2019.

Vancouver:

Miron RA. A journey across time scales: accelerated atomistic simulation of surface growth. [Internet] [Doctoral dissertation]. Penn State University; 2004. [cited 2019 Dec 12]. Available from: https://etda.libraries.psu.edu/catalog/6291.

Council of Science Editors:

Miron RA. A journey across time scales: accelerated atomistic simulation of surface growth. [Doctoral Dissertation]. Penn State University; 2004. Available from: https://etda.libraries.psu.edu/catalog/6291

29. Alassaad, Kassem. Addition of Ge to the H-Si-C chemical system during SiC epitaxy : Addition de Ge dans le système chimique H-Si-C durant l'épitaxie de SiC.

Degree: Docteur es, Matériaux, 2014, Université Claude Bernard – Lyon I

Ce travail concerne l'ajout de GeH4 au système de précurseurs gazeux classique SiH4+C3H8 pour la croissance épitaxiale de SiC par dépôt chimique en phase vapeur.… (more)

Subjects/Keywords: 4H-SiC; Homoépitaxie; GeH4; Incorporation de Ge; Mécanisme de croissance; 3C-SiC; Hétéroépitaxie; 4H-SiC; Homoepiataxy; GeH4; Ge incorporation; Growth mechanism; 3C-SiC; Heteroepitaxy; 530

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APA (6th Edition):

Alassaad, K. (2014). Addition of Ge to the H-Si-C chemical system during SiC epitaxy : Addition de Ge dans le système chimique H-Si-C durant l'épitaxie de SiC. (Doctoral Dissertation). Université Claude Bernard – Lyon I. Retrieved from http://www.theses.fr/2014LYO10216

Chicago Manual of Style (16th Edition):

Alassaad, Kassem. “Addition of Ge to the H-Si-C chemical system during SiC epitaxy : Addition de Ge dans le système chimique H-Si-C durant l'épitaxie de SiC.” 2014. Doctoral Dissertation, Université Claude Bernard – Lyon I. Accessed December 12, 2019. http://www.theses.fr/2014LYO10216.

MLA Handbook (7th Edition):

Alassaad, Kassem. “Addition of Ge to the H-Si-C chemical system during SiC epitaxy : Addition de Ge dans le système chimique H-Si-C durant l'épitaxie de SiC.” 2014. Web. 12 Dec 2019.

Vancouver:

Alassaad K. Addition of Ge to the H-Si-C chemical system during SiC epitaxy : Addition de Ge dans le système chimique H-Si-C durant l'épitaxie de SiC. [Internet] [Doctoral dissertation]. Université Claude Bernard – Lyon I; 2014. [cited 2019 Dec 12]. Available from: http://www.theses.fr/2014LYO10216.

Council of Science Editors:

Alassaad K. Addition of Ge to the H-Si-C chemical system during SiC epitaxy : Addition de Ge dans le système chimique H-Si-C durant l'épitaxie de SiC. [Doctoral Dissertation]. Université Claude Bernard – Lyon I; 2014. Available from: http://www.theses.fr/2014LYO10216


University of South Florida

30. Locke, Christopher William. Stress-Strain Management of Heteroepitaxial Polycrystalline Silicon Carbide Films.

Degree: 2011, University of South Florida

 Silicon carbide (SiC) is one of the hardest known materials and is also, by good fortune, a wide bandgap semiconductor. While the application of SiC… (more)

Subjects/Keywords: Chemical Vapor Deposition; Heteroepitaxy; Polysilicon; Residual Stress; Silicon Carbide; American Studies; Arts and Humanities; Electrical and Computer Engineering; Materials Science and Engineering

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APA (6th Edition):

Locke, C. W. (2011). Stress-Strain Management of Heteroepitaxial Polycrystalline Silicon Carbide Films. (Thesis). University of South Florida. Retrieved from https://scholarcommons.usf.edu/etd/3211

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Locke, Christopher William. “Stress-Strain Management of Heteroepitaxial Polycrystalline Silicon Carbide Films.” 2011. Thesis, University of South Florida. Accessed December 12, 2019. https://scholarcommons.usf.edu/etd/3211.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Locke, Christopher William. “Stress-Strain Management of Heteroepitaxial Polycrystalline Silicon Carbide Films.” 2011. Web. 12 Dec 2019.

Vancouver:

Locke CW. Stress-Strain Management of Heteroepitaxial Polycrystalline Silicon Carbide Films. [Internet] [Thesis]. University of South Florida; 2011. [cited 2019 Dec 12]. Available from: https://scholarcommons.usf.edu/etd/3211.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Locke CW. Stress-Strain Management of Heteroepitaxial Polycrystalline Silicon Carbide Films. [Thesis]. University of South Florida; 2011. Available from: https://scholarcommons.usf.edu/etd/3211

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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