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You searched for subject:(Hafnium oxide). Showing records 1 – 30 of 53 total matches.

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Oregon State University

1. Ray, Peter William. Characterization of Carboxylic Acids on Hafnium Oxide Thin Films.

Degree: MS, Chemical Engineering, 2015, Oregon State University

Hafnium Oxide thin films has had growing attention due hafnium oxide being used as a gate dielectric for MOSFET transistors and a potential next generation… (more)

Subjects/Keywords: Hafnium Oxide; Thin films

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APA (6th Edition):

Ray, P. W. (2015). Characterization of Carboxylic Acids on Hafnium Oxide Thin Films. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/57430

Chicago Manual of Style (16th Edition):

Ray, Peter William. “Characterization of Carboxylic Acids on Hafnium Oxide Thin Films.” 2015. Masters Thesis, Oregon State University. Accessed December 12, 2019. http://hdl.handle.net/1957/57430.

MLA Handbook (7th Edition):

Ray, Peter William. “Characterization of Carboxylic Acids on Hafnium Oxide Thin Films.” 2015. Web. 12 Dec 2019.

Vancouver:

Ray PW. Characterization of Carboxylic Acids on Hafnium Oxide Thin Films. [Internet] [Masters thesis]. Oregon State University; 2015. [cited 2019 Dec 12]. Available from: http://hdl.handle.net/1957/57430.

Council of Science Editors:

Ray PW. Characterization of Carboxylic Acids on Hafnium Oxide Thin Films. [Masters Thesis]. Oregon State University; 2015. Available from: http://hdl.handle.net/1957/57430


University of Alberta

2. Afshar, Amir. Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition.

Degree: PhD, Department of Chemical and Materials Engineering, 2014, University of Alberta

 Gallium Nitride (GaN) is recognized as one of the best candidates for high-power high-frequency metal-oxide-semiconductor field-effect-transistors (MOSFETs). The critical component to enable this technology is… (more)

Subjects/Keywords: Density Functional Theory; Zirconium Oxide; Atomic Layer Deposition; Hafnium Oxide; Growth Mechanism; Zinc Oxide

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APA (6th Edition):

Afshar, A. (2014). Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition. (Doctoral Dissertation). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/cs4655g604

Chicago Manual of Style (16th Edition):

Afshar, Amir. “Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition.” 2014. Doctoral Dissertation, University of Alberta. Accessed December 12, 2019. https://era.library.ualberta.ca/files/cs4655g604.

MLA Handbook (7th Edition):

Afshar, Amir. “Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition.” 2014. Web. 12 Dec 2019.

Vancouver:

Afshar A. Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition. [Internet] [Doctoral dissertation]. University of Alberta; 2014. [cited 2019 Dec 12]. Available from: https://era.library.ualberta.ca/files/cs4655g604.

Council of Science Editors:

Afshar A. Materials Characterization and Growth Mechanisms of ZnO, ZrO2, and HfO2 Deposited by Atomic Layer Deposition. [Doctoral Dissertation]. University of Alberta; 2014. Available from: https://era.library.ualberta.ca/files/cs4655g604


NSYSU

3. Yang, Cheng-Chi. Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 We find that the forming voltage will become larger when the cell size is scale down which might deter the real applications for RRAM devices.… (more)

Subjects/Keywords: Thermal conductivity coefficient; Dielectric coefficient; Reliability; Hafnium oxide; Side wall; RRAM

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APA (6th Edition):

Yang, C. (2017). Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Cheng-Chi. “Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory.” 2017. Thesis, NSYSU. Accessed December 12, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Cheng-Chi. “Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory.” 2017. Web. 12 Dec 2019.

Vancouver:

Yang C. Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Dec 12]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang C. Characterization of side-wall structure on Hafnium oxide-base Resistance Random Access Memory. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0621117-140314

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. Telecky, Alan J. Photoresist and ion-exchange chemistry of HafSOx.

Degree: PhD, 2012, Oregon State University

 The chemistry of hafnium oxide based and materials are described in the context of ion exchange and lithography. HafSOx, represented by the composition HfO₂₋[subscript x](SO₄)x,… (more)

Subjects/Keywords: chemistry; Hafnium oxide

hafnium oxide (HfO2). Many of these oxides are prepared as high-quality films through… …implications, including a background of metal oxide solution chemistry, an introduction to ion… …thin film oxides such as zinc oxide (ZnO), indium tin oxide (ITO), and… …utilization. On the other hand, solution processing of metal oxide films can offer certain… …vast library of solution routes for deposition of metal oxide thin films can be found in the… 

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APA (6th Edition):

Telecky, A. J. (2012). Photoresist and ion-exchange chemistry of HafSOx. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/29732

Chicago Manual of Style (16th Edition):

Telecky, Alan J. “Photoresist and ion-exchange chemistry of HafSOx.” 2012. Doctoral Dissertation, Oregon State University. Accessed December 12, 2019. http://hdl.handle.net/1957/29732.

MLA Handbook (7th Edition):

Telecky, Alan J. “Photoresist and ion-exchange chemistry of HafSOx.” 2012. Web. 12 Dec 2019.

Vancouver:

Telecky AJ. Photoresist and ion-exchange chemistry of HafSOx. [Internet] [Doctoral dissertation]. Oregon State University; 2012. [cited 2019 Dec 12]. Available from: http://hdl.handle.net/1957/29732.

Council of Science Editors:

Telecky AJ. Photoresist and ion-exchange chemistry of HafSOx. [Doctoral Dissertation]. Oregon State University; 2012. Available from: http://hdl.handle.net/1957/29732


RMIT University

5. Murdoch, B. Energetic deposition of dielectric metal oxide coatings.

Degree: 2016, RMIT University

 This thesis examines the optical and electronic properties of wide-bandgap metal oxides grown using energetic deposition methods. The films have also been incorporated in metal/oxide/metal… (more)

Subjects/Keywords: Fields of Research; dielectric; thin film; hafnium oxide; memristor; neuromorphic

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APA (6th Edition):

Murdoch, B. (2016). Energetic deposition of dielectric metal oxide coatings. (Thesis). RMIT University. Retrieved from http://researchbank.rmit.edu.au/view/rmit:161669

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Murdoch, B. “Energetic deposition of dielectric metal oxide coatings.” 2016. Thesis, RMIT University. Accessed December 12, 2019. http://researchbank.rmit.edu.au/view/rmit:161669.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Murdoch, B. “Energetic deposition of dielectric metal oxide coatings.” 2016. Web. 12 Dec 2019.

Vancouver:

Murdoch B. Energetic deposition of dielectric metal oxide coatings. [Internet] [Thesis]. RMIT University; 2016. [cited 2019 Dec 12]. Available from: http://researchbank.rmit.edu.au/view/rmit:161669.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Murdoch B. Energetic deposition of dielectric metal oxide coatings. [Thesis]. RMIT University; 2016. Available from: http://researchbank.rmit.edu.au/view/rmit:161669

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

6. Lin, Hong-yang. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.

Degree: Master, Materials and Optoelectronic Science, 2013, NSYSU

 Resistive Random Access Memory (RRAM) is considered as one of the most promising candidate for the next-generation memories due to their excellent properties such as… (more)

Subjects/Keywords: Hafnium Oxide; RRAM; Concentration of Oxygen; Nernst Equation; Energy Dissipation Rate

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APA (6th Edition):

Lin, H. (2013). Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Hong-yang. “Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.” 2013. Thesis, NSYSU. Accessed December 12, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Hong-yang. “Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film.” 2013. Web. 12 Dec 2019.

Vancouver:

Lin H. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Dec 12]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin H. Study on Resistance Switching Characteristics of Hafnium Oxide Thin Film. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-161633

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

7. Ng, Kit Ling. Current transport mechanism of hafnium oxide films prepared by direct sputtering.

Degree: 2003, Hong Kong University of Science and Technology

 The downscaling of MOSFET devices to improve the packing density and device performance has faced a lot of challenges. Within a decade, an ultra-thin gate… (more)

Subjects/Keywords: Hafnium oxide; Thin films

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APA (6th Edition):

Ng, K. L. (2003). Current transport mechanism of hafnium oxide films prepared by direct sputtering. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b807458 ; http://repository.ust.hk/ir/bitstream/1783.1-4680/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ng, Kit Ling. “Current transport mechanism of hafnium oxide films prepared by direct sputtering.” 2003. Thesis, Hong Kong University of Science and Technology. Accessed December 12, 2019. https://doi.org/10.14711/thesis-b807458 ; http://repository.ust.hk/ir/bitstream/1783.1-4680/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ng, Kit Ling. “Current transport mechanism of hafnium oxide films prepared by direct sputtering.” 2003. Web. 12 Dec 2019.

Vancouver:

Ng KL. Current transport mechanism of hafnium oxide films prepared by direct sputtering. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2003. [cited 2019 Dec 12]. Available from: https://doi.org/10.14711/thesis-b807458 ; http://repository.ust.hk/ir/bitstream/1783.1-4680/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ng KL. Current transport mechanism of hafnium oxide films prepared by direct sputtering. [Thesis]. Hong Kong University of Science and Technology; 2003. Available from: https://doi.org/10.14711/thesis-b807458 ; http://repository.ust.hk/ir/bitstream/1783.1-4680/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Boise State University

8. Southwick, Richard G., III. An Investigation of Carrier Transport in Hafnium Oxide/Silicon Dioxide MOS Gate Dielectric Stacks from 5.6-400K.

Degree: 2010, Boise State University

Hafnium oxide (HfO2) is replacing silicon dioxide (SiO2) as the gate dielectric in metal oxide semiconductor (MOS) structures driven mainly by need to reduce high… (more)

Subjects/Keywords: hafnium oxide; cryogenic; transport; MOS; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Southwick, Richard G., I. (2010). An Investigation of Carrier Transport in Hafnium Oxide/Silicon Dioxide MOS Gate Dielectric Stacks from 5.6-400K. (Thesis). Boise State University. Retrieved from https://scholarworks.boisestate.edu/td/149

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Southwick, Richard G., III. “An Investigation of Carrier Transport in Hafnium Oxide/Silicon Dioxide MOS Gate Dielectric Stacks from 5.6-400K.” 2010. Thesis, Boise State University. Accessed December 12, 2019. https://scholarworks.boisestate.edu/td/149.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Southwick, Richard G., III. “An Investigation of Carrier Transport in Hafnium Oxide/Silicon Dioxide MOS Gate Dielectric Stacks from 5.6-400K.” 2010. Web. 12 Dec 2019.

Vancouver:

Southwick, Richard G. I. An Investigation of Carrier Transport in Hafnium Oxide/Silicon Dioxide MOS Gate Dielectric Stacks from 5.6-400K. [Internet] [Thesis]. Boise State University; 2010. [cited 2019 Dec 12]. Available from: https://scholarworks.boisestate.edu/td/149.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Southwick, Richard G. I. An Investigation of Carrier Transport in Hafnium Oxide/Silicon Dioxide MOS Gate Dielectric Stacks from 5.6-400K. [Thesis]. Boise State University; 2010. Available from: https://scholarworks.boisestate.edu/td/149

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New Mexico

9. Branch, Brittany. MICROELECTRODE ARRAY FOR CAPACITIVE TRANSDUCTION OF RETINAL RESPONSES.

Degree: Nanoscience and Microsystems, 2014, University of New Mexico

 Neural degenerative diseases and traumatic injuries to the eye affect millions of people worldwide, motivating the development of neural prosthetic interfaces to restore sensory or… (more)

Subjects/Keywords: Retina; Microfabrication; Capacitive Sensing; Hafnium Oxide; Microelectrode Array

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APA (6th Edition):

Branch, B. (2014). MICROELECTRODE ARRAY FOR CAPACITIVE TRANSDUCTION OF RETINAL RESPONSES. (Doctoral Dissertation). University of New Mexico. Retrieved from http://hdl.handle.net/1928/23538

Chicago Manual of Style (16th Edition):

Branch, Brittany. “MICROELECTRODE ARRAY FOR CAPACITIVE TRANSDUCTION OF RETINAL RESPONSES.” 2014. Doctoral Dissertation, University of New Mexico. Accessed December 12, 2019. http://hdl.handle.net/1928/23538.

MLA Handbook (7th Edition):

Branch, Brittany. “MICROELECTRODE ARRAY FOR CAPACITIVE TRANSDUCTION OF RETINAL RESPONSES.” 2014. Web. 12 Dec 2019.

Vancouver:

Branch B. MICROELECTRODE ARRAY FOR CAPACITIVE TRANSDUCTION OF RETINAL RESPONSES. [Internet] [Doctoral dissertation]. University of New Mexico; 2014. [cited 2019 Dec 12]. Available from: http://hdl.handle.net/1928/23538.

Council of Science Editors:

Branch B. MICROELECTRODE ARRAY FOR CAPACITIVE TRANSDUCTION OF RETINAL RESPONSES. [Doctoral Dissertation]. University of New Mexico; 2014. Available from: http://hdl.handle.net/1928/23538


University of Dayton

10. DeCerbo, Jennifer N. Development and Characterization of Layered, Nitrogen-Doped Hafnium Oxide and Aluminum Oxide Films for Use as Wide Temperature Capacitor Dielectrics.

Degree: PhD, Materials Engineering, 2015, University of Dayton

 Single and multilayer films of nitrogen-doped hafnium oxide and aluminum oxide were fabricated up to 1 µm thick using pulsed DC reactive magnetron sputtering. The… (more)

Subjects/Keywords: Materials Science; wide temperature dielectric, aluminum oxide, hafnium oxide, layered dielectric, capacitor

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APA (6th Edition):

DeCerbo, J. N. (2015). Development and Characterization of Layered, Nitrogen-Doped Hafnium Oxide and Aluminum Oxide Films for Use as Wide Temperature Capacitor Dielectrics. (Doctoral Dissertation). University of Dayton. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=dayton1429979783

Chicago Manual of Style (16th Edition):

DeCerbo, Jennifer N. “Development and Characterization of Layered, Nitrogen-Doped Hafnium Oxide and Aluminum Oxide Films for Use as Wide Temperature Capacitor Dielectrics.” 2015. Doctoral Dissertation, University of Dayton. Accessed December 12, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1429979783.

MLA Handbook (7th Edition):

DeCerbo, Jennifer N. “Development and Characterization of Layered, Nitrogen-Doped Hafnium Oxide and Aluminum Oxide Films for Use as Wide Temperature Capacitor Dielectrics.” 2015. Web. 12 Dec 2019.

Vancouver:

DeCerbo JN. Development and Characterization of Layered, Nitrogen-Doped Hafnium Oxide and Aluminum Oxide Films for Use as Wide Temperature Capacitor Dielectrics. [Internet] [Doctoral dissertation]. University of Dayton; 2015. [cited 2019 Dec 12]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=dayton1429979783.

Council of Science Editors:

DeCerbo JN. Development and Characterization of Layered, Nitrogen-Doped Hafnium Oxide and Aluminum Oxide Films for Use as Wide Temperature Capacitor Dielectrics. [Doctoral Dissertation]. University of Dayton; 2015. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=dayton1429979783


Virginia Tech

11. Daniel, Monisha Gnanachandra. Nanolaminate coatings to improve long-term stability of plasmonic structures in physiological environments.

Degree: MS, Electrical and Computer Engineering, 2017, Virginia Tech

 The unprecedented ability of plasmonic metal nano-structures to concentrate light into deep-subwavelength volumes has propelled their use in a vast array of nanophotonics technologies and… (more)

Subjects/Keywords: Aluminum Oxide / Hafnium Oxide Nanolaminate Coatings; Atomic Layer Deposition; Plasmonics; In-situ Testing; Stability Improvement

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APA (6th Edition):

Daniel, M. G. (2017). Nanolaminate coatings to improve long-term stability of plasmonic structures in physiological environments. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/78280

Chicago Manual of Style (16th Edition):

Daniel, Monisha Gnanachandra. “Nanolaminate coatings to improve long-term stability of plasmonic structures in physiological environments.” 2017. Masters Thesis, Virginia Tech. Accessed December 12, 2019. http://hdl.handle.net/10919/78280.

MLA Handbook (7th Edition):

Daniel, Monisha Gnanachandra. “Nanolaminate coatings to improve long-term stability of plasmonic structures in physiological environments.” 2017. Web. 12 Dec 2019.

Vancouver:

Daniel MG. Nanolaminate coatings to improve long-term stability of plasmonic structures in physiological environments. [Internet] [Masters thesis]. Virginia Tech; 2017. [cited 2019 Dec 12]. Available from: http://hdl.handle.net/10919/78280.

Council of Science Editors:

Daniel MG. Nanolaminate coatings to improve long-term stability of plasmonic structures in physiological environments. [Masters Thesis]. Virginia Tech; 2017. Available from: http://hdl.handle.net/10919/78280


Vanderbilt University

12. Schmidt, Benjamin W. Fabrication and Characterization of Metal Oxycarbide Thin Films.

Degree: PhD, Chemical Engineering, 2010, Vanderbilt University

 Ceramic materials in the Al-O-C and Hf-O-C systems were fabricated for electrical or thermal protection applications. AlOxCy films were produced via high-vacuum chemical vapor deposition… (more)

Subjects/Keywords: x-ray photoelectron spectroscopy; precursor; hafnium oxide; aluminum oxide; chemical vapor deposition

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APA (6th Edition):

Schmidt, B. W. (2010). Fabrication and Characterization of Metal Oxycarbide Thin Films. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-02012010-124544/ ;

Chicago Manual of Style (16th Edition):

Schmidt, Benjamin W. “Fabrication and Characterization of Metal Oxycarbide Thin Films.” 2010. Doctoral Dissertation, Vanderbilt University. Accessed December 12, 2019. http://etd.library.vanderbilt.edu/available/etd-02012010-124544/ ;.

MLA Handbook (7th Edition):

Schmidt, Benjamin W. “Fabrication and Characterization of Metal Oxycarbide Thin Films.” 2010. Web. 12 Dec 2019.

Vancouver:

Schmidt BW. Fabrication and Characterization of Metal Oxycarbide Thin Films. [Internet] [Doctoral dissertation]. Vanderbilt University; 2010. [cited 2019 Dec 12]. Available from: http://etd.library.vanderbilt.edu/available/etd-02012010-124544/ ;.

Council of Science Editors:

Schmidt BW. Fabrication and Characterization of Metal Oxycarbide Thin Films. [Doctoral Dissertation]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-02012010-124544/ ;


North Carolina State University

13. Lee, Sanghyun. Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application.

Degree: PhD, Electrical Engineering, 2007, North Carolina State University

Subjects/Keywords: HAFNIUM OXIDE; TITANIUM OXIDE; HAFNIUM SILICON OXYNITRIDE; CMOS; HIGH K; GATE DIELECTRICS

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APA (6th Edition):

Lee, S. (2007). Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5251

Chicago Manual of Style (16th Edition):

Lee, Sanghyun. “Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application.” 2007. Doctoral Dissertation, North Carolina State University. Accessed December 12, 2019. http://www.lib.ncsu.edu/resolver/1840.16/5251.

MLA Handbook (7th Edition):

Lee, Sanghyun. “Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application.” 2007. Web. 12 Dec 2019.

Vancouver:

Lee S. Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application. [Internet] [Doctoral dissertation]. North Carolina State University; 2007. [cited 2019 Dec 12]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5251.

Council of Science Editors:

Lee S. Characterization of High-k gate dielectrics based on HfO2 and TiO2 for CMOS Application. [Doctoral Dissertation]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5251


NSYSU

14. Huang, Kuan-Chi. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.

Degree: Master, Physics, 2014, NSYSU

 In order to clarify the mechanism of reset process in Ti/HfO2/TiN resistive random access memory (RRAM) devices, constant voltage sampling measurements are carried out at… (more)

Subjects/Keywords: complementary resistive switches; indium tin oxide; activation energy; hafnium; resistive random access memory

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APA (6th Edition):

Huang, K. (2014). Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Kuan-Chi. “Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.” 2014. Thesis, NSYSU. Accessed December 12, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Kuan-Chi. “Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory.” 2014. Web. 12 Dec 2019.

Vancouver:

Huang K. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Dec 12]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang K. Investigation of Fabrication and Mechanism of High Performance Complementary Resistive Switching Memory. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0520114-125006

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

15. Lou, Jyun-Hao. Study of Resistance Switching Physical Mechanism in Hafnium Oxide Thin Film for Resistive Random Access Memory.

Degree: Master, Physics, 2012, NSYSU

 This study is focuses on the resistance switching physical mechanism in hafnium oxide (HfO2) of resistive random access memory (RRAM). HfO2 was taken as the… (more)

Subjects/Keywords: Non-volatile memory (NVM); RRAM; Hafnium oxide; Carrier transport mechanism; Resistance switching

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APA (6th Edition):

Lou, J. (2012). Study of Resistance Switching Physical Mechanism in Hafnium Oxide Thin Film for Resistive Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714112-162455

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lou, Jyun-Hao. “Study of Resistance Switching Physical Mechanism in Hafnium Oxide Thin Film for Resistive Random Access Memory.” 2012. Thesis, NSYSU. Accessed December 12, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714112-162455.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lou, Jyun-Hao. “Study of Resistance Switching Physical Mechanism in Hafnium Oxide Thin Film for Resistive Random Access Memory.” 2012. Web. 12 Dec 2019.

Vancouver:

Lou J. Study of Resistance Switching Physical Mechanism in Hafnium Oxide Thin Film for Resistive Random Access Memory. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 Dec 12]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714112-162455.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lou J. Study of Resistance Switching Physical Mechanism in Hafnium Oxide Thin Film for Resistive Random Access Memory. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714112-162455

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

16. Chen, Po-Hsun. Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device.

Degree: PhD, Physics, 2018, NSYSU

 With the advent of advanced technologies such as the Internet of Things (IoT), artificial intelligence (AI), and cloud computing, huge amounts of data are continuously… (more)

Subjects/Keywords: Resistance Switching (RS); Indium Tin Oxide (ITO); Resistive Random Access Memory (RRAM); Hafnium Dioxide (HfO2)

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APA (6th Edition):

Chen, P. (2018). Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038

Chicago Manual of Style (16th Edition):

Chen, Po-Hsun. “Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device.” 2018. Doctoral Dissertation, NSYSU. Accessed December 12, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038.

MLA Handbook (7th Edition):

Chen, Po-Hsun. “Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device.” 2018. Web. 12 Dec 2019.

Vancouver:

Chen P. Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device. [Internet] [Doctoral dissertation]. NSYSU; 2018. [cited 2019 Dec 12]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038.

Council of Science Editors:

Chen P. Study on Fabrication Process and Resistive Switching Mechanism of Indium-tin-oxide-based Resistive Random Access Memory Device. [Doctoral Dissertation]. NSYSU; 2018. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0431118-212038


University of Hong Kong

17. 邓林峰.; Deng, Linfeng. A study on pentacene organic thin-film transistors with Hf-based oxideas gate dielectric.

Degree: PhD, 2011, University of Hong Kong

 Compared with its inorganic counterpart, organic thin-film transistor (OTFT) has advantages such as low-temperature fabrication, adaptability to large-area flexible substrate, and low cost. However, they… (more)

Subjects/Keywords: Thin film transistors.; Organic thin films.; Gate array circuits.; Dielectrics.; Hafnium oxide.

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APA (6th Edition):

邓林峰.; Deng, L. (2011). A study on pentacene organic thin-film transistors with Hf-based oxideas gate dielectric. (Doctoral Dissertation). University of Hong Kong. Retrieved from Deng, L. [邓林峰]. (2011). A study on pentacene organic thin-film transistors with Hf-based oxide as gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4724451 ; http://dx.doi.org/10.5353/th_b4724451 ; http://hdl.handle.net/10722/146134

Chicago Manual of Style (16th Edition):

邓林峰.; Deng, Linfeng. “A study on pentacene organic thin-film transistors with Hf-based oxideas gate dielectric.” 2011. Doctoral Dissertation, University of Hong Kong. Accessed December 12, 2019. Deng, L. [邓林峰]. (2011). A study on pentacene organic thin-film transistors with Hf-based oxide as gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4724451 ; http://dx.doi.org/10.5353/th_b4724451 ; http://hdl.handle.net/10722/146134.

MLA Handbook (7th Edition):

邓林峰.; Deng, Linfeng. “A study on pentacene organic thin-film transistors with Hf-based oxideas gate dielectric.” 2011. Web. 12 Dec 2019.

Vancouver:

邓林峰.; Deng L. A study on pentacene organic thin-film transistors with Hf-based oxideas gate dielectric. [Internet] [Doctoral dissertation]. University of Hong Kong; 2011. [cited 2019 Dec 12]. Available from: Deng, L. [邓林峰]. (2011). A study on pentacene organic thin-film transistors with Hf-based oxide as gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4724451 ; http://dx.doi.org/10.5353/th_b4724451 ; http://hdl.handle.net/10722/146134.

Council of Science Editors:

邓林峰.; Deng L. A study on pentacene organic thin-film transistors with Hf-based oxideas gate dielectric. [Doctoral Dissertation]. University of Hong Kong; 2011. Available from: Deng, L. [邓林峰]. (2011). A study on pentacene organic thin-film transistors with Hf-based oxide as gate dielectric. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4724451 ; http://dx.doi.org/10.5353/th_b4724451 ; http://hdl.handle.net/10722/146134


Duke University

18. McGuire, Felicia Ann. Two-dimensional molybdenum disulfide negative capacitance field-effect transistors .

Degree: 2018, Duke University

  Essential to metal-oxide-semiconductor field-effect transistor (MOSFET) scaling is the reduction of the supply voltage to mitigate the power consumption and corresponding heat dissipation. Conventional… (more)

Subjects/Keywords: Nanotechnology; Electrical engineering; Materials Science; 2D; Ferroelectric; Hafnium Zirconium Oxide; HZO; MoS2; Negative Capacitance

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APA (6th Edition):

McGuire, F. A. (2018). Two-dimensional molybdenum disulfide negative capacitance field-effect transistors . (Thesis). Duke University. Retrieved from http://hdl.handle.net/10161/16831

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

McGuire, Felicia Ann. “Two-dimensional molybdenum disulfide negative capacitance field-effect transistors .” 2018. Thesis, Duke University. Accessed December 12, 2019. http://hdl.handle.net/10161/16831.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

McGuire, Felicia Ann. “Two-dimensional molybdenum disulfide negative capacitance field-effect transistors .” 2018. Web. 12 Dec 2019.

Vancouver:

McGuire FA. Two-dimensional molybdenum disulfide negative capacitance field-effect transistors . [Internet] [Thesis]. Duke University; 2018. [cited 2019 Dec 12]. Available from: http://hdl.handle.net/10161/16831.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

McGuire FA. Two-dimensional molybdenum disulfide negative capacitance field-effect transistors . [Thesis]. Duke University; 2018. Available from: http://hdl.handle.net/10161/16831

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Michigan Technological University

19. Collins, Jeana. REVERSE INSULATOR DIELECTROPHORESIS: UTILIZING DROPLET MICROENVIRONMENTS FOR DISCERNING MOLECULAR EXPRESSIONS ON CELL SURFACES.

Degree: PhD, Department of Chemical Engineering, 2018, Michigan Technological University

  Lab-on-a-chip (LOC) technologies enable the development of portable analysis devices that use small sample and reagent volumes, allow for multiple unit operations, and couple… (more)

Subjects/Keywords: droplet microfluidics; Lab-on-a-chip; dielectrophoresis; interfacial tension; microfabrication; hafnium oxide; Other Chemical Engineering

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APA (6th Edition):

Collins, J. (2018). REVERSE INSULATOR DIELECTROPHORESIS: UTILIZING DROPLET MICROENVIRONMENTS FOR DISCERNING MOLECULAR EXPRESSIONS ON CELL SURFACES. (Doctoral Dissertation). Michigan Technological University. Retrieved from https://digitalcommons.mtu.edu/etdr/655

Chicago Manual of Style (16th Edition):

Collins, Jeana. “REVERSE INSULATOR DIELECTROPHORESIS: UTILIZING DROPLET MICROENVIRONMENTS FOR DISCERNING MOLECULAR EXPRESSIONS ON CELL SURFACES.” 2018. Doctoral Dissertation, Michigan Technological University. Accessed December 12, 2019. https://digitalcommons.mtu.edu/etdr/655.

MLA Handbook (7th Edition):

Collins, Jeana. “REVERSE INSULATOR DIELECTROPHORESIS: UTILIZING DROPLET MICROENVIRONMENTS FOR DISCERNING MOLECULAR EXPRESSIONS ON CELL SURFACES.” 2018. Web. 12 Dec 2019.

Vancouver:

Collins J. REVERSE INSULATOR DIELECTROPHORESIS: UTILIZING DROPLET MICROENVIRONMENTS FOR DISCERNING MOLECULAR EXPRESSIONS ON CELL SURFACES. [Internet] [Doctoral dissertation]. Michigan Technological University; 2018. [cited 2019 Dec 12]. Available from: https://digitalcommons.mtu.edu/etdr/655.

Council of Science Editors:

Collins J. REVERSE INSULATOR DIELECTROPHORESIS: UTILIZING DROPLET MICROENVIRONMENTS FOR DISCERNING MOLECULAR EXPRESSIONS ON CELL SURFACES. [Doctoral Dissertation]. Michigan Technological University; 2018. Available from: https://digitalcommons.mtu.edu/etdr/655


North Carolina State University

20. Lin, Yanxia. Advanced Gate Stacks for Strained Si Devices.

Degree: PhD, Electrical Engineering, 2005, North Carolina State University

 Due to the mobility enhancement provided by strained Si for both electrons and holes, as well as the scaling requirement and potential issues of polysilicon… (more)

Subjects/Keywords: Hafnium oxide; mobility; metal gate electrode

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APA (6th Edition):

Lin, Y. (2005). Advanced Gate Stacks for Strained Si Devices. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3730

Chicago Manual of Style (16th Edition):

Lin, Yanxia. “Advanced Gate Stacks for Strained Si Devices.” 2005. Doctoral Dissertation, North Carolina State University. Accessed December 12, 2019. http://www.lib.ncsu.edu/resolver/1840.16/3730.

MLA Handbook (7th Edition):

Lin, Yanxia. “Advanced Gate Stacks for Strained Si Devices.” 2005. Web. 12 Dec 2019.

Vancouver:

Lin Y. Advanced Gate Stacks for Strained Si Devices. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2019 Dec 12]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3730.

Council of Science Editors:

Lin Y. Advanced Gate Stacks for Strained Si Devices. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3730


Hong Kong University of Science and Technology

21. Zhan, Nian. Fabrication and characterization of hafnium oxide films prepared by direct sputtering.

Degree: 2003, Hong Kong University of Science and Technology

 Having a high dielectric constant and potential to form device-grade interface to silicon, hafnium oxide (Hf02) is considered as the promising potential substitute for Si02… (more)

Subjects/Keywords: Silicon oxide films; Silicon-on-insulator technology; Hafnium oxide

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APA (6th Edition):

Zhan, N. (2003). Fabrication and characterization of hafnium oxide films prepared by direct sputtering. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b796755 ; http://repository.ust.hk/ir/bitstream/1783.1-4664/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhan, Nian. “Fabrication and characterization of hafnium oxide films prepared by direct sputtering.” 2003. Thesis, Hong Kong University of Science and Technology. Accessed December 12, 2019. https://doi.org/10.14711/thesis-b796755 ; http://repository.ust.hk/ir/bitstream/1783.1-4664/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhan, Nian. “Fabrication and characterization of hafnium oxide films prepared by direct sputtering.” 2003. Web. 12 Dec 2019.

Vancouver:

Zhan N. Fabrication and characterization of hafnium oxide films prepared by direct sputtering. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2003. [cited 2019 Dec 12]. Available from: https://doi.org/10.14711/thesis-b796755 ; http://repository.ust.hk/ir/bitstream/1783.1-4664/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhan N. Fabrication and characterization of hafnium oxide films prepared by direct sputtering. [Thesis]. Hong Kong University of Science and Technology; 2003. Available from: https://doi.org/10.14711/thesis-b796755 ; http://repository.ust.hk/ir/bitstream/1783.1-4664/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Texas – Austin

22. Park, Hyun Jung. Interfacial properties of thin film hetero-structure: copper-oxides of hafnium-silicon.

Degree: PhD, Materials Science and Engineering, 2002, University of Texas – Austin

 This dissertation focuses on the properties of Cu / high-k oxide and high-k / Si (100) interfaces using surface analysis tools such as X-ray photoelectron… (more)

Subjects/Keywords: Thin films – Electric properties; Hafnium oxide; Silicon oxide films

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APA (6th Edition):

Park, H. J. (2002). Interfacial properties of thin film hetero-structure: copper-oxides of hafnium-silicon. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/836

Chicago Manual of Style (16th Edition):

Park, Hyun Jung. “Interfacial properties of thin film hetero-structure: copper-oxides of hafnium-silicon.” 2002. Doctoral Dissertation, University of Texas – Austin. Accessed December 12, 2019. http://hdl.handle.net/2152/836.

MLA Handbook (7th Edition):

Park, Hyun Jung. “Interfacial properties of thin film hetero-structure: copper-oxides of hafnium-silicon.” 2002. Web. 12 Dec 2019.

Vancouver:

Park HJ. Interfacial properties of thin film hetero-structure: copper-oxides of hafnium-silicon. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2002. [cited 2019 Dec 12]. Available from: http://hdl.handle.net/2152/836.

Council of Science Editors:

Park HJ. Interfacial properties of thin film hetero-structure: copper-oxides of hafnium-silicon. [Doctoral Dissertation]. University of Texas – Austin; 2002. Available from: http://hdl.handle.net/2152/836

23. Lin, Chen-Han. Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films.

Degree: 2012, Texas A&M University

 Nanocrystals embedded zirconium-doped hafnium oxide (ZrHfO) high-k gate dielectric films have been studied for the applications of the future metal oxide semiconductor field effect transistor… (more)

Subjects/Keywords: High-k; Hafnium Oxide; Nonvolatile; Memory; MOSFET

…MODIFIED ZIRCONIUM-DOPED HAFNIUM OXIDE HIGH-K GATE DIELECTRIC FILM WITH LOW EQUILVALENT OXIDE… …RUTHENIUM OXIDE EMBEDDED ZIRCONIUM-DOPED HAFNIUM OXIDE HIGH-K NONVOLATILE MEMORIES… …Fig. 2, both hafnium oxide (HfO2) and zirconium oxide (ZrO2) films are… …TIN OXIDE AND ZINC OXIDE EMBEDDED ZrHfO HIGH-K NONVOLATILE MEMORIES… …ncconductive oxide candidates: nc-RuO, nc-ITO, and nc-ZnO …. 125 Fitted equations for long-term… 

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APA (6th Edition):

Lin, C. (2012). Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films. (Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/ETD-TAMU-2011-08-9884

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Chen-Han. “Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films.” 2012. Thesis, Texas A&M University. Accessed December 12, 2019. http://hdl.handle.net/1969.1/ETD-TAMU-2011-08-9884.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Chen-Han. “Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films.” 2012. Web. 12 Dec 2019.

Vancouver:

Lin C. Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films. [Internet] [Thesis]. Texas A&M University; 2012. [cited 2019 Dec 12]. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2011-08-9884.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin C. Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films. [Thesis]. Texas A&M University; 2012. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-2011-08-9884

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Maine

24. Yang, Fan. Characterization of HFO2 Capacitors.

Degree: MSEE, Electrical Engineering, 2003, University of Maine

Hafnium oxide (HfOn) is a promising dielectric for future microelectronic applications. Hf02 thin films (10-75nm) were deposited on Pt/Si02/Si substrates by pulsed DC magnetron… (more)

Subjects/Keywords: Capacitors; Dielectrics; Hafnium oxide; Electrical and Computer Engineering

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APA (6th Edition):

Yang, F. (2003). Characterization of HFO2 Capacitors. (Masters Thesis). University of Maine. Retrieved from https://digitalcommons.library.umaine.edu/etd/254

Chicago Manual of Style (16th Edition):

Yang, Fan. “Characterization of HFO2 Capacitors.” 2003. Masters Thesis, University of Maine. Accessed December 12, 2019. https://digitalcommons.library.umaine.edu/etd/254.

MLA Handbook (7th Edition):

Yang, Fan. “Characterization of HFO2 Capacitors.” 2003. Web. 12 Dec 2019.

Vancouver:

Yang F. Characterization of HFO2 Capacitors. [Internet] [Masters thesis]. University of Maine; 2003. [cited 2019 Dec 12]. Available from: https://digitalcommons.library.umaine.edu/etd/254.

Council of Science Editors:

Yang F. Characterization of HFO2 Capacitors. [Masters Thesis]. University of Maine; 2003. Available from: https://digitalcommons.library.umaine.edu/etd/254

25. MEGHA CHADHA. STUDY OF CO - HFO2 GRANULAR FILMS DEPOSITED BY SEQUENTIAL SPUTTERING.

Degree: 2011, National University of Singapore

Subjects/Keywords: Granular films; Magntetoresistance; Sequential Sputtering; Superparamagnetism; Cobalt; Hafnium oxide

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APA (6th Edition):

CHADHA, M. (2011). STUDY OF CO - HFO2 GRANULAR FILMS DEPOSITED BY SEQUENTIAL SPUTTERING. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/34455

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

CHADHA, MEGHA. “STUDY OF CO - HFO2 GRANULAR FILMS DEPOSITED BY SEQUENTIAL SPUTTERING.” 2011. Thesis, National University of Singapore. Accessed December 12, 2019. http://scholarbank.nus.edu.sg/handle/10635/34455.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

CHADHA, MEGHA. “STUDY OF CO - HFO2 GRANULAR FILMS DEPOSITED BY SEQUENTIAL SPUTTERING.” 2011. Web. 12 Dec 2019.

Vancouver:

CHADHA M. STUDY OF CO - HFO2 GRANULAR FILMS DEPOSITED BY SEQUENTIAL SPUTTERING. [Internet] [Thesis]. National University of Singapore; 2011. [cited 2019 Dec 12]. Available from: http://scholarbank.nus.edu.sg/handle/10635/34455.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

CHADHA M. STUDY OF CO - HFO2 GRANULAR FILMS DEPOSITED BY SEQUENTIAL SPUTTERING. [Thesis]. National University of Singapore; 2011. Available from: http://scholarbank.nus.edu.sg/handle/10635/34455

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

26. Long, Joseph Preston. Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces.

Degree: PhD, Physics, 2008, North Carolina State University

 The research discussed here has been carried out in order to advance the basic understanding of the compatibility between germanium surfaces and hafnium-based high κ… (more)

Subjects/Keywords: high-k; germanium; hafnium oxide; CMOS; PECVD

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APA (6th Edition):

Long, J. P. (2008). Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3194

Chicago Manual of Style (16th Edition):

Long, Joseph Preston. “Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces.” 2008. Doctoral Dissertation, North Carolina State University. Accessed December 12, 2019. http://www.lib.ncsu.edu/resolver/1840.16/3194.

MLA Handbook (7th Edition):

Long, Joseph Preston. “Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces.” 2008. Web. 12 Dec 2019.

Vancouver:

Long JP. Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces. [Internet] [Doctoral dissertation]. North Carolina State University; 2008. [cited 2019 Dec 12]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3194.

Council of Science Editors:

Long JP. Spectroscopic and Electrical Studies of Hafnium-Based High-k Thin Film Dielectrics on Germanium Surfaces. [Doctoral Dissertation]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3194


University of New South Wales

27. Zhang, Qiuyang. Energy selective contacts based on double-barrier tunnelling structures for hot carrier solar cells.

Degree: Photovoltaics & Renewable Energy Engineering, 2018, University of New South Wales

 The hot carrier solar (HCSC) is an innovative concept of photovoltaics device that has the potential to surpass the Shockley-Queisser efficiency limit. To achieve high… (more)

Subjects/Keywords: Double-barrier tunnelling structures; Hot carrier solar cell; Energy selective contacts; Hafnium oxide; Germanium quantum well

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APA (6th Edition):

Zhang, Q. (2018). Energy selective contacts based on double-barrier tunnelling structures for hot carrier solar cells. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/60322

Chicago Manual of Style (16th Edition):

Zhang, Qiuyang. “Energy selective contacts based on double-barrier tunnelling structures for hot carrier solar cells.” 2018. Doctoral Dissertation, University of New South Wales. Accessed December 12, 2019. http://handle.unsw.edu.au/1959.4/60322.

MLA Handbook (7th Edition):

Zhang, Qiuyang. “Energy selective contacts based on double-barrier tunnelling structures for hot carrier solar cells.” 2018. Web. 12 Dec 2019.

Vancouver:

Zhang Q. Energy selective contacts based on double-barrier tunnelling structures for hot carrier solar cells. [Internet] [Doctoral dissertation]. University of New South Wales; 2018. [cited 2019 Dec 12]. Available from: http://handle.unsw.edu.au/1959.4/60322.

Council of Science Editors:

Zhang Q. Energy selective contacts based on double-barrier tunnelling structures for hot carrier solar cells. [Doctoral Dissertation]. University of New South Wales; 2018. Available from: http://handle.unsw.edu.au/1959.4/60322


North Carolina State University

28. Hinkle, Christopher. Fixed Charge Reduction and Tunneling in Stacked Dielectrics.

Degree: PhD, Physics, 2005, North Carolina State University

 Stacked gate dielectrics using high-k materials were deposited using a RPECVD method. Aluminum oxide, hafnium oxide, hafnium silicate, nitrided films of each of the above,… (more)

Subjects/Keywords: aluminum oxide; stacked dielectrics; hafnium oxide; high-k; fixed charge; tunneling

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hinkle, C. (2005). Fixed Charge Reduction and Tunneling in Stacked Dielectrics. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5623

Chicago Manual of Style (16th Edition):

Hinkle, Christopher. “Fixed Charge Reduction and Tunneling in Stacked Dielectrics.” 2005. Doctoral Dissertation, North Carolina State University. Accessed December 12, 2019. http://www.lib.ncsu.edu/resolver/1840.16/5623.

MLA Handbook (7th Edition):

Hinkle, Christopher. “Fixed Charge Reduction and Tunneling in Stacked Dielectrics.” 2005. Web. 12 Dec 2019.

Vancouver:

Hinkle C. Fixed Charge Reduction and Tunneling in Stacked Dielectrics. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2019 Dec 12]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5623.

Council of Science Editors:

Hinkle C. Fixed Charge Reduction and Tunneling in Stacked Dielectrics. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5623


Indian Institute of Science

29. Jajala, Bujjamma. Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications.

Degree: 2010, Indian Institute of Science

 The scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistors to sub-100nm requires replacement of conventional Silicon dioxide layer with high dielectric constant (K) material… (more)

Subjects/Keywords: Thin Films -; Dielecrtics; Complementary Metal Oxide Semiconductor (CMOS); Thin Film Deposition; Hafnium Dioxide Thin Films; HfO2 Thin Films; high-K Dielectrics; Ion Assisted Deposition (IAD); Condensed Matter Physics

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jajala, B. (2010). Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/2241

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jajala, Bujjamma. “Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications.” 2010. Thesis, Indian Institute of Science. Accessed December 12, 2019. http://hdl.handle.net/2005/2241.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jajala, Bujjamma. “Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications.” 2010. Web. 12 Dec 2019.

Vancouver:

Jajala B. Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications. [Internet] [Thesis]. Indian Institute of Science; 2010. [cited 2019 Dec 12]. Available from: http://hdl.handle.net/2005/2241.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jajala B. Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications. [Thesis]. Indian Institute of Science; 2010. Available from: http://hdl.handle.net/2005/2241

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

30. Jajala, Bujjamma. Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications.

Degree: 2010, Indian Institute of Science

 The scaling down of Complementary Metal Oxide Semiconductor (CMOS) transistors to sub-100nm requires replacement of conventional Silicon dioxide layer with high dielectric constant (K) material… (more)

Subjects/Keywords: Thin Films -; Dielecrtics; Complementary Metal Oxide Semiconductor (CMOS); Thin Film Deposition; Hafnium Dioxide Thin Films; HfO2 Thin Films; high-K Dielectrics; Ion Assisted Deposition (IAD); Condensed Matter Physics

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jajala, B. (2010). Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/handle/2005/2241 ; http://etd.ncsi.iisc.ernet.in/abstracts/2855/G24418-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jajala, Bujjamma. “Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications.” 2010. Thesis, Indian Institute of Science. Accessed December 12, 2019. http://etd.iisc.ernet.in/handle/2005/2241 ; http://etd.ncsi.iisc.ernet.in/abstracts/2855/G24418-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jajala, Bujjamma. “Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications.” 2010. Web. 12 Dec 2019.

Vancouver:

Jajala B. Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications. [Internet] [Thesis]. Indian Institute of Science; 2010. [cited 2019 Dec 12]. Available from: http://etd.iisc.ernet.in/handle/2005/2241 ; http://etd.ncsi.iisc.ernet.in/abstracts/2855/G24418-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jajala B. Ion Assisted Deposition Of HfO2 Thin Films For CMOS Gate Dielectric Applications. [Thesis]. Indian Institute of Science; 2010. Available from: http://etd.iisc.ernet.in/handle/2005/2241 ; http://etd.ncsi.iisc.ernet.in/abstracts/2855/G24418-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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