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You searched for subject:(HVPE). Showing records 1 – 19 of 19 total matches.

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NSYSU

1. Lu, Jin-wei. Growth of free-standing non-polar GaN on LiAlO2 and LiGaO2 substrates by hydride vapor phase epitaxy.

Degree: Master, Materials and Optoelectronic Science, 2010, NSYSU

 Nonpolar free-standing GaN wafer were fabricated by using the hydride vapor phaseepitaxy(HVPE) technique on γ-LiAlO2 and (010) LiGaO2 substrates. Metallic gallium, NH3 and ultra-purity nitrogen… (more)

Subjects/Keywords: HVPE; nonpolar GaN

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APA (6th Edition):

Lu, J. (2010). Growth of free-standing non-polar GaN on LiAlO2 and LiGaO2 substrates by hydride vapor phase epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0808110-224308

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lu, Jin-wei. “Growth of free-standing non-polar GaN on LiAlO2 and LiGaO2 substrates by hydride vapor phase epitaxy.” 2010. Thesis, NSYSU. Accessed March 30, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0808110-224308.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lu, Jin-wei. “Growth of free-standing non-polar GaN on LiAlO2 and LiGaO2 substrates by hydride vapor phase epitaxy.” 2010. Web. 30 Mar 2020.

Vancouver:

Lu J. Growth of free-standing non-polar GaN on LiAlO2 and LiGaO2 substrates by hydride vapor phase epitaxy. [Internet] [Thesis]. NSYSU; 2010. [cited 2020 Mar 30]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0808110-224308.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lu J. Growth of free-standing non-polar GaN on LiAlO2 and LiGaO2 substrates by hydride vapor phase epitaxy. [Thesis]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0808110-224308

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

2. Hui HSiang, Wen. Growth of GaN thin films on Pattern Sapphire substrates by Hydride vapor phase epitaxy.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 In this thesis, the growth of c-plane gallium nitride (GaN) epitaxial films on a patterned sapphire substrate (PSS) by hydride vapor phase epitaxy (HVPE). Gallium… (more)

Subjects/Keywords: GaN; HVPE; PSS

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APA (6th Edition):

Hui HSiang, W. (2014). Growth of GaN thin films on Pattern Sapphire substrates by Hydride vapor phase epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-092406

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hui HSiang, Wen. “Growth of GaN thin films on Pattern Sapphire substrates by Hydride vapor phase epitaxy.” 2014. Thesis, NSYSU. Accessed March 30, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-092406.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hui HSiang, Wen. “Growth of GaN thin films on Pattern Sapphire substrates by Hydride vapor phase epitaxy.” 2014. Web. 30 Mar 2020.

Vancouver:

Hui HSiang W. Growth of GaN thin films on Pattern Sapphire substrates by Hydride vapor phase epitaxy. [Internet] [Thesis]. NSYSU; 2014. [cited 2020 Mar 30]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-092406.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hui HSiang W. Growth of GaN thin films on Pattern Sapphire substrates by Hydride vapor phase epitaxy. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-092406

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

3. Lee, Chu-An. Growth and characterization of nonpolar InN epitaxial films on LiGaO2 substrates by hydride vapor phase epitaxy.

Degree: PhD, Materials and Optoelectronic Science, 2013, NSYSU

 The purpose of this work was to grow the nonpolar InN by HVPE and to find the process to increase the crystal properties of the… (more)

Subjects/Keywords: epitaxy; nonpolar; Cz; HVPE; LGO; InN

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APA (6th Edition):

Lee, C. (2013). Growth and characterization of nonpolar InN epitaxial films on LiGaO2 substrates by hydride vapor phase epitaxy. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008113-000248

Chicago Manual of Style (16th Edition):

Lee, Chu-An. “Growth and characterization of nonpolar InN epitaxial films on LiGaO2 substrates by hydride vapor phase epitaxy.” 2013. Doctoral Dissertation, NSYSU. Accessed March 30, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008113-000248.

MLA Handbook (7th Edition):

Lee, Chu-An. “Growth and characterization of nonpolar InN epitaxial films on LiGaO2 substrates by hydride vapor phase epitaxy.” 2013. Web. 30 Mar 2020.

Vancouver:

Lee C. Growth and characterization of nonpolar InN epitaxial films on LiGaO2 substrates by hydride vapor phase epitaxy. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2020 Mar 30]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008113-000248.

Council of Science Editors:

Lee C. Growth and characterization of nonpolar InN epitaxial films on LiGaO2 substrates by hydride vapor phase epitaxy. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-1008113-000248


Université de Grenoble

4. Coudurier, Nicolas. Contribution à l'épitaxie des nitrures d'aluminium et de bore par dépôt chimique en phase vapeur à haute température : Contribution to the epitaxial growth of aluminum and boron nitrides by chemical vapor deposition at high temperature.

Degree: Docteur es, Matériaux, mécanique, génie civil, électrochimie, 2014, Université de Grenoble

Cette thèse se place dans le contexte des recherches menées sur l'élaboration de support de haute qualité cristalline pour des applications optoélectronique et piézoélectrique. Les… (more)

Subjects/Keywords: Nitrure de bore; Nitrure d\'aluminium; CVD; Epitaxie; Haute température; HVPE; Boron nitride; Aluminium nitride; CVD; Epitaxy; High temperature; HVPE; 620

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APA (6th Edition):

Coudurier, N. (2014). Contribution à l'épitaxie des nitrures d'aluminium et de bore par dépôt chimique en phase vapeur à haute température : Contribution to the epitaxial growth of aluminum and boron nitrides by chemical vapor deposition at high temperature. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2014GRENI009

Chicago Manual of Style (16th Edition):

Coudurier, Nicolas. “Contribution à l'épitaxie des nitrures d'aluminium et de bore par dépôt chimique en phase vapeur à haute température : Contribution to the epitaxial growth of aluminum and boron nitrides by chemical vapor deposition at high temperature.” 2014. Doctoral Dissertation, Université de Grenoble. Accessed March 30, 2020. http://www.theses.fr/2014GRENI009.

MLA Handbook (7th Edition):

Coudurier, Nicolas. “Contribution à l'épitaxie des nitrures d'aluminium et de bore par dépôt chimique en phase vapeur à haute température : Contribution to the epitaxial growth of aluminum and boron nitrides by chemical vapor deposition at high temperature.” 2014. Web. 30 Mar 2020.

Vancouver:

Coudurier N. Contribution à l'épitaxie des nitrures d'aluminium et de bore par dépôt chimique en phase vapeur à haute température : Contribution to the epitaxial growth of aluminum and boron nitrides by chemical vapor deposition at high temperature. [Internet] [Doctoral dissertation]. Université de Grenoble; 2014. [cited 2020 Mar 30]. Available from: http://www.theses.fr/2014GRENI009.

Council of Science Editors:

Coudurier N. Contribution à l'épitaxie des nitrures d'aluminium et de bore par dépôt chimique en phase vapeur à haute température : Contribution to the epitaxial growth of aluminum and boron nitrides by chemical vapor deposition at high temperature. [Doctoral Dissertation]. Université de Grenoble; 2014. Available from: http://www.theses.fr/2014GRENI009

5. Dong, Zhenning. Synthesis of GaAs nanowires and nanostructures by HVPE on Si substrate. Application to a microbial fuel cell based on GaAs nanowires : Synthèse de nanofils et de nanostructures de GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) sur substrat silicium. Application des nanofils GaAs aux piles microbiennes.

Degree: Docteur es, Matériaux et Composants pour l'Electronique, 2017, Clermont Auvergne

Nous avons proposé d'étudier le potentiel de l'outil d'épitaxie HVPE (Hydride Vapour Phase Epitaxy) pour la croissance de nanofils de GaAs. La morphologie nanofil permet… (more)

Subjects/Keywords: Nanofils GaAs; Croissance auto-catalysée; Épitaxie; HVPE; Pile microbienne; GaAs nanowires; Self-catalyzed growth; Epitaxy; HVPE; Microbial Fuel Cell

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APA (6th Edition):

Dong, Z. (2017). Synthesis of GaAs nanowires and nanostructures by HVPE on Si substrate. Application to a microbial fuel cell based on GaAs nanowires : Synthèse de nanofils et de nanostructures de GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) sur substrat silicium. Application des nanofils GaAs aux piles microbiennes. (Doctoral Dissertation). Clermont Auvergne. Retrieved from http://www.theses.fr/2017CLFAC091

Chicago Manual of Style (16th Edition):

Dong, Zhenning. “Synthesis of GaAs nanowires and nanostructures by HVPE on Si substrate. Application to a microbial fuel cell based on GaAs nanowires : Synthèse de nanofils et de nanostructures de GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) sur substrat silicium. Application des nanofils GaAs aux piles microbiennes.” 2017. Doctoral Dissertation, Clermont Auvergne. Accessed March 30, 2020. http://www.theses.fr/2017CLFAC091.

MLA Handbook (7th Edition):

Dong, Zhenning. “Synthesis of GaAs nanowires and nanostructures by HVPE on Si substrate. Application to a microbial fuel cell based on GaAs nanowires : Synthèse de nanofils et de nanostructures de GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) sur substrat silicium. Application des nanofils GaAs aux piles microbiennes.” 2017. Web. 30 Mar 2020.

Vancouver:

Dong Z. Synthesis of GaAs nanowires and nanostructures by HVPE on Si substrate. Application to a microbial fuel cell based on GaAs nanowires : Synthèse de nanofils et de nanostructures de GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) sur substrat silicium. Application des nanofils GaAs aux piles microbiennes. [Internet] [Doctoral dissertation]. Clermont Auvergne; 2017. [cited 2020 Mar 30]. Available from: http://www.theses.fr/2017CLFAC091.

Council of Science Editors:

Dong Z. Synthesis of GaAs nanowires and nanostructures by HVPE on Si substrate. Application to a microbial fuel cell based on GaAs nanowires : Synthèse de nanofils et de nanostructures de GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) sur substrat silicium. Application des nanofils GaAs aux piles microbiennes. [Doctoral Dissertation]. Clermont Auvergne; 2017. Available from: http://www.theses.fr/2017CLFAC091

6. Avit, Geoffrey. Micro- et nanofils de Ga (In)N et GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) : Ga(In)N and GaAs micro- and nanowires grown by Hydride Vapor Phase Epitaxy (HVPE).

Degree: Docteur es, Matériaux et Composants pour l'Electronique, 2014, Université Blaise-Pascale, Clermont-Ferrand II

Le manuscrit traite de l'épitaxie en phase vapeur par la méthode aux hydrures (HVPE) de micro- et nanofils Ga(In)N et GaAs. La HVPE est une… (more)

Subjects/Keywords: HVPE; Nanofils; GaN; InGaN; GaAs; Croissance sélective; Croissance VLS; HVPE; Nanowires; GaN; InGaN; GaAs; Selective area growth; VLS growth

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APA (6th Edition):

Avit, G. (2014). Micro- et nanofils de Ga (In)N et GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) : Ga(In)N and GaAs micro- and nanowires grown by Hydride Vapor Phase Epitaxy (HVPE). (Doctoral Dissertation). Université Blaise-Pascale, Clermont-Ferrand II. Retrieved from http://www.theses.fr/2014CLF22530

Chicago Manual of Style (16th Edition):

Avit, Geoffrey. “Micro- et nanofils de Ga (In)N et GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) : Ga(In)N and GaAs micro- and nanowires grown by Hydride Vapor Phase Epitaxy (HVPE).” 2014. Doctoral Dissertation, Université Blaise-Pascale, Clermont-Ferrand II. Accessed March 30, 2020. http://www.theses.fr/2014CLF22530.

MLA Handbook (7th Edition):

Avit, Geoffrey. “Micro- et nanofils de Ga (In)N et GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) : Ga(In)N and GaAs micro- and nanowires grown by Hydride Vapor Phase Epitaxy (HVPE).” 2014. Web. 30 Mar 2020.

Vancouver:

Avit G. Micro- et nanofils de Ga (In)N et GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) : Ga(In)N and GaAs micro- and nanowires grown by Hydride Vapor Phase Epitaxy (HVPE). [Internet] [Doctoral dissertation]. Université Blaise-Pascale, Clermont-Ferrand II; 2014. [cited 2020 Mar 30]. Available from: http://www.theses.fr/2014CLF22530.

Council of Science Editors:

Avit G. Micro- et nanofils de Ga (In)N et GaAs par épitaxie en phase vapeur par la méthode aux hydrures (HVPE) : Ga(In)N and GaAs micro- and nanowires grown by Hydride Vapor Phase Epitaxy (HVPE). [Doctoral Dissertation]. Université Blaise-Pascale, Clermont-Ferrand II; 2014. Available from: http://www.theses.fr/2014CLF22530

7. Zeghouane, Mohammed. Contrôle de l'homogénéité et de la composition en indium dans les nanofils InGaN synthétisés par HVPE : Growth of InGaN nanowires by HVPE with the control of indium composition and substrate homogeneity.

Degree: Docteur es, Physique des Matériaux, 2019, Clermont Auvergne

Ce mémoire traite de l’étude de la croissance de nanofils (In,Ga)N par épitaxie en phase vapeur par la méthode aux hydrures (HVPE). L’objectif est de… (more)

Subjects/Keywords: HVPE; Nanofils; InGaN; InN; Croissance sélective; Croissance auto-organisée; HVPE; Nanowires; InGaN; InN; Selective growth; Self-induced growth

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APA (6th Edition):

Zeghouane, M. (2019). Contrôle de l'homogénéité et de la composition en indium dans les nanofils InGaN synthétisés par HVPE : Growth of InGaN nanowires by HVPE with the control of indium composition and substrate homogeneity. (Doctoral Dissertation). Clermont Auvergne. Retrieved from http://www.theses.fr/2019CLFAC031

Chicago Manual of Style (16th Edition):

Zeghouane, Mohammed. “Contrôle de l'homogénéité et de la composition en indium dans les nanofils InGaN synthétisés par HVPE : Growth of InGaN nanowires by HVPE with the control of indium composition and substrate homogeneity.” 2019. Doctoral Dissertation, Clermont Auvergne. Accessed March 30, 2020. http://www.theses.fr/2019CLFAC031.

MLA Handbook (7th Edition):

Zeghouane, Mohammed. “Contrôle de l'homogénéité et de la composition en indium dans les nanofils InGaN synthétisés par HVPE : Growth of InGaN nanowires by HVPE with the control of indium composition and substrate homogeneity.” 2019. Web. 30 Mar 2020.

Vancouver:

Zeghouane M. Contrôle de l'homogénéité et de la composition en indium dans les nanofils InGaN synthétisés par HVPE : Growth of InGaN nanowires by HVPE with the control of indium composition and substrate homogeneity. [Internet] [Doctoral dissertation]. Clermont Auvergne; 2019. [cited 2020 Mar 30]. Available from: http://www.theses.fr/2019CLFAC031.

Council of Science Editors:

Zeghouane M. Contrôle de l'homogénéité et de la composition en indium dans les nanofils InGaN synthétisés par HVPE : Growth of InGaN nanowires by HVPE with the control of indium composition and substrate homogeneity. [Doctoral Dissertation]. Clermont Auvergne; 2019. Available from: http://www.theses.fr/2019CLFAC031


NSYSU

8. Liao, Shuai-Wu. Growth of free-standing GaN(0002) on LiGaO2 substrates by hydride vapor phase epitaxy.

Degree: Master, Materials and Optoelectronic Science, 2011, NSYSU

 In this paper, polar free-standing (0002)GaN wafer were fabricated by using the hydride vapor phase epitaxy(HVPE) technique on (002) LiGaO2 substrates. Polar of The (0002)… (more)

Subjects/Keywords: GaN; HVPE; chemical vapor deposition; X-ray diffraction; LiGaO2; buffer layer

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APA (6th Edition):

Liao, S. (2011). Growth of free-standing GaN(0002) on LiGaO2 substrates by hydride vapor phase epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804111-160700

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liao, Shuai-Wu. “Growth of free-standing GaN(0002) on LiGaO2 substrates by hydride vapor phase epitaxy.” 2011. Thesis, NSYSU. Accessed March 30, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804111-160700.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liao, Shuai-Wu. “Growth of free-standing GaN(0002) on LiGaO2 substrates by hydride vapor phase epitaxy.” 2011. Web. 30 Mar 2020.

Vancouver:

Liao S. Growth of free-standing GaN(0002) on LiGaO2 substrates by hydride vapor phase epitaxy. [Internet] [Thesis]. NSYSU; 2011. [cited 2020 Mar 30]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804111-160700.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liao S. Growth of free-standing GaN(0002) on LiGaO2 substrates by hydride vapor phase epitaxy. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804111-160700

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

9. Roche, Elissa. Croissance par HVPE et étude des propriétés optiques de microfils de GaN et de nanofils d'InxGa1-xN en vue de la réalisation de diodes électroluminescentes : HVPE growth and optical spectroscopy of GaN microwires and InxGa1-xN nanowires for LED application.

Degree: Docteur es, Physique des Matériaux, 2016, Université Blaise-Pascale, Clermont-Ferrand II

Ce manuscrit est consacré à la croissance par HVPE et à la spectroscopie optique de nanofils d'InxGa1-xN et de microfils de GaN en vue de… (more)

Subjects/Keywords: HVPE; Spectroscopie optique; Microfils; Nanofils; InGaN; GaN; DEL; Effet laser; Thermodynamique; HVPE; Optical spectroscopy; Microwires; Nanowires; InGaN; GaN; LED; Lasing effect; Thermodynamics

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APA (6th Edition):

Roche, E. (2016). Croissance par HVPE et étude des propriétés optiques de microfils de GaN et de nanofils d'InxGa1-xN en vue de la réalisation de diodes électroluminescentes : HVPE growth and optical spectroscopy of GaN microwires and InxGa1-xN nanowires for LED application. (Doctoral Dissertation). Université Blaise-Pascale, Clermont-Ferrand II. Retrieved from http://www.theses.fr/2016CLF22748

Chicago Manual of Style (16th Edition):

Roche, Elissa. “Croissance par HVPE et étude des propriétés optiques de microfils de GaN et de nanofils d'InxGa1-xN en vue de la réalisation de diodes électroluminescentes : HVPE growth and optical spectroscopy of GaN microwires and InxGa1-xN nanowires for LED application.” 2016. Doctoral Dissertation, Université Blaise-Pascale, Clermont-Ferrand II. Accessed March 30, 2020. http://www.theses.fr/2016CLF22748.

MLA Handbook (7th Edition):

Roche, Elissa. “Croissance par HVPE et étude des propriétés optiques de microfils de GaN et de nanofils d'InxGa1-xN en vue de la réalisation de diodes électroluminescentes : HVPE growth and optical spectroscopy of GaN microwires and InxGa1-xN nanowires for LED application.” 2016. Web. 30 Mar 2020.

Vancouver:

Roche E. Croissance par HVPE et étude des propriétés optiques de microfils de GaN et de nanofils d'InxGa1-xN en vue de la réalisation de diodes électroluminescentes : HVPE growth and optical spectroscopy of GaN microwires and InxGa1-xN nanowires for LED application. [Internet] [Doctoral dissertation]. Université Blaise-Pascale, Clermont-Ferrand II; 2016. [cited 2020 Mar 30]. Available from: http://www.theses.fr/2016CLF22748.

Council of Science Editors:

Roche E. Croissance par HVPE et étude des propriétés optiques de microfils de GaN et de nanofils d'InxGa1-xN en vue de la réalisation de diodes électroluminescentes : HVPE growth and optical spectroscopy of GaN microwires and InxGa1-xN nanowires for LED application. [Doctoral Dissertation]. Université Blaise-Pascale, Clermont-Ferrand II; 2016. Available from: http://www.theses.fr/2016CLF22748

10. Hijazi, Hadi. HVPE-Grown GaAs Nanowires : Growth Modeling, Passivation and Transport Properties : Croissance de Nanofils GaAs par HVPE : modélisation, passivation et propriétés de transport.

Degree: Docteur es, Physique, 2019, Clermont Auvergne

Alors que la croissance par HVPE de nanofils GaAs est bien maitrisée à l'Institut Pascal sur substrat de GaAs, quant à elle, la croissance sur… (more)

Subjects/Keywords: HVPE; Nanofils GaAs; Silicium; Dopage; Transport de charge et de spin; ΜPL; HVPE; GaAs nanowires; Silicon; Doping; Charge and spin transport; ΜPL

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APA (6th Edition):

Hijazi, H. (2019). HVPE-Grown GaAs Nanowires : Growth Modeling, Passivation and Transport Properties : Croissance de Nanofils GaAs par HVPE : modélisation, passivation et propriétés de transport. (Doctoral Dissertation). Clermont Auvergne. Retrieved from http://www.theses.fr/2019CLFAC059

Chicago Manual of Style (16th Edition):

Hijazi, Hadi. “HVPE-Grown GaAs Nanowires : Growth Modeling, Passivation and Transport Properties : Croissance de Nanofils GaAs par HVPE : modélisation, passivation et propriétés de transport.” 2019. Doctoral Dissertation, Clermont Auvergne. Accessed March 30, 2020. http://www.theses.fr/2019CLFAC059.

MLA Handbook (7th Edition):

Hijazi, Hadi. “HVPE-Grown GaAs Nanowires : Growth Modeling, Passivation and Transport Properties : Croissance de Nanofils GaAs par HVPE : modélisation, passivation et propriétés de transport.” 2019. Web. 30 Mar 2020.

Vancouver:

Hijazi H. HVPE-Grown GaAs Nanowires : Growth Modeling, Passivation and Transport Properties : Croissance de Nanofils GaAs par HVPE : modélisation, passivation et propriétés de transport. [Internet] [Doctoral dissertation]. Clermont Auvergne; 2019. [cited 2020 Mar 30]. Available from: http://www.theses.fr/2019CLFAC059.

Council of Science Editors:

Hijazi H. HVPE-Grown GaAs Nanowires : Growth Modeling, Passivation and Transport Properties : Croissance de Nanofils GaAs par HVPE : modélisation, passivation et propriétés de transport. [Doctoral Dissertation]. Clermont Auvergne; 2019. Available from: http://www.theses.fr/2019CLFAC059


North Carolina State University

11. Mecouch, William John. Preparation and Characterization of Thin, Atomically Clean GaN(0001) and AlN(0001) Films and the Deposition of Thick GaN Films via Iodine Vapor Phase Growth.

Degree: PhD, Materials Science and Engineering, 2005, North Carolina State University

 The research conducted for this dissertation involved two tasks important to the achievement of (1) increased breakdown fields and improved ohmic and rectifying contacts in… (more)

Subjects/Keywords: IVPG; HVPE; bulk growth; Surface science

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APA (6th Edition):

Mecouch, W. J. (2005). Preparation and Characterization of Thin, Atomically Clean GaN(0001) and AlN(0001) Films and the Deposition of Thick GaN Films via Iodine Vapor Phase Growth. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4793

Chicago Manual of Style (16th Edition):

Mecouch, William John. “Preparation and Characterization of Thin, Atomically Clean GaN(0001) and AlN(0001) Films and the Deposition of Thick GaN Films via Iodine Vapor Phase Growth.” 2005. Doctoral Dissertation, North Carolina State University. Accessed March 30, 2020. http://www.lib.ncsu.edu/resolver/1840.16/4793.

MLA Handbook (7th Edition):

Mecouch, William John. “Preparation and Characterization of Thin, Atomically Clean GaN(0001) and AlN(0001) Films and the Deposition of Thick GaN Films via Iodine Vapor Phase Growth.” 2005. Web. 30 Mar 2020.

Vancouver:

Mecouch WJ. Preparation and Characterization of Thin, Atomically Clean GaN(0001) and AlN(0001) Films and the Deposition of Thick GaN Films via Iodine Vapor Phase Growth. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2020 Mar 30]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4793.

Council of Science Editors:

Mecouch WJ. Preparation and Characterization of Thin, Atomically Clean GaN(0001) and AlN(0001) Films and the Deposition of Thick GaN Films via Iodine Vapor Phase Growth. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4793


NSYSU

12. Chiang, Chien-Te. Growth of thick GaN films on sapphire and pattern sapphire substrates by hydride vapor phase epitaxy.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 In this thesis, we use hydride vapor phase epitaxy (HVPE) system to grow thick gallium nitride (GaN) on sapphire (c-Al2O3) and Pattern sapphire substrate (PSS).… (more)

Subjects/Keywords: hydride vapor phase epitaxy(HVPE); thick GaN film; sapphire; Pattern sapphire substrate(PSS)

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APA (6th Edition):

Chiang, C. (2014). Growth of thick GaN films on sapphire and pattern sapphire substrates by hydride vapor phase epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-090924

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chiang, Chien-Te. “Growth of thick GaN films on sapphire and pattern sapphire substrates by hydride vapor phase epitaxy.” 2014. Thesis, NSYSU. Accessed March 30, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-090924.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chiang, Chien-Te. “Growth of thick GaN films on sapphire and pattern sapphire substrates by hydride vapor phase epitaxy.” 2014. Web. 30 Mar 2020.

Vancouver:

Chiang C. Growth of thick GaN films on sapphire and pattern sapphire substrates by hydride vapor phase epitaxy. [Internet] [Thesis]. NSYSU; 2014. [cited 2020 Mar 30]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-090924.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chiang C. Growth of thick GaN films on sapphire and pattern sapphire substrates by hydride vapor phase epitaxy. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-090924

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Kansas State University

13. Richards, Paul. Characterization of the electrical and physical properties of scandium nitride grown using hydride vapor phase epitaxy.

Degree: MS, Department of Electrical and Computer Engineering, 2010, Kansas State University

 It is important in semiconductor manufacturing to understand the physical and electrical characteristics of new proposed semiconductors to determine their usefulness. Many tests are used… (more)

Subjects/Keywords: Scandium; Nitride; HVPE; Epitaxy; characterization; ScN; Engineering, Chemical (0542); Engineering, Electronics and Electrical (0544)

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APA (6th Edition):

Richards, P. (2010). Characterization of the electrical and physical properties of scandium nitride grown using hydride vapor phase epitaxy. (Masters Thesis). Kansas State University. Retrieved from http://hdl.handle.net/2097/4090

Chicago Manual of Style (16th Edition):

Richards, Paul. “Characterization of the electrical and physical properties of scandium nitride grown using hydride vapor phase epitaxy.” 2010. Masters Thesis, Kansas State University. Accessed March 30, 2020. http://hdl.handle.net/2097/4090.

MLA Handbook (7th Edition):

Richards, Paul. “Characterization of the electrical and physical properties of scandium nitride grown using hydride vapor phase epitaxy.” 2010. Web. 30 Mar 2020.

Vancouver:

Richards P. Characterization of the electrical and physical properties of scandium nitride grown using hydride vapor phase epitaxy. [Internet] [Masters thesis]. Kansas State University; 2010. [cited 2020 Mar 30]. Available from: http://hdl.handle.net/2097/4090.

Council of Science Editors:

Richards P. Characterization of the electrical and physical properties of scandium nitride grown using hydride vapor phase epitaxy. [Masters Thesis]. Kansas State University; 2010. Available from: http://hdl.handle.net/2097/4090


University of Arkansas

14. Kawagy, Alaa Ahmad. Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III-Nitride Growth.

Degree: MS, 2019, University of Arkansas

  The aim of this research is to investigate and characterize the quality of commercially obtained gallium nitride (GaN) on sapphire substrates that have been… (more)

Subjects/Keywords: Epitaxy; GaN; GaN on Sapphire; HVPE substrates; morphology; Electromagnetics and Photonics; Engineering Physics; Nanotechnology Fabrication

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APA (6th Edition):

Kawagy, A. A. (2019). Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III-Nitride Growth. (Masters Thesis). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/3197

Chicago Manual of Style (16th Edition):

Kawagy, Alaa Ahmad. “Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III-Nitride Growth.” 2019. Masters Thesis, University of Arkansas. Accessed March 30, 2020. https://scholarworks.uark.edu/etd/3197.

MLA Handbook (7th Edition):

Kawagy, Alaa Ahmad. “Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III-Nitride Growth.” 2019. Web. 30 Mar 2020.

Vancouver:

Kawagy AA. Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III-Nitride Growth. [Internet] [Masters thesis]. University of Arkansas; 2019. [cited 2020 Mar 30]. Available from: https://scholarworks.uark.edu/etd/3197.

Council of Science Editors:

Kawagy AA. Characterization of Hydride Vapor Phase Epitaxy Grown GaN Substrates for Future III-Nitride Growth. [Masters Thesis]. University of Arkansas; 2019. Available from: https://scholarworks.uark.edu/etd/3197


University of Florida

15. Chaudhari, Vaibhav U. Growth of Indium Nitride and Gallium Nitride on Silicon Using Metal Organic Hydride Vapor Phase Epitaxy.

Degree: PhD, Chemical Engineering, 2012, University of Florida

 Well aligned catalyst free InN nanorods were grown on Si by metal organic hydride vapor phase expitaxy (MO-HVPE). The effect of different surface treatments and… (more)

Subjects/Keywords: Ammonia; Applied physics; Conceptual lattices; Eggshells; Indium; Nanorods; Nanostructures; Nitrides; Nucleation; Silicon; epitaxy  – gan  – hvpe  – inn

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APA (6th Edition):

Chaudhari, V. U. (2012). Growth of Indium Nitride and Gallium Nitride on Silicon Using Metal Organic Hydride Vapor Phase Epitaxy. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0044518

Chicago Manual of Style (16th Edition):

Chaudhari, Vaibhav U. “Growth of Indium Nitride and Gallium Nitride on Silicon Using Metal Organic Hydride Vapor Phase Epitaxy.” 2012. Doctoral Dissertation, University of Florida. Accessed March 30, 2020. http://ufdc.ufl.edu/UFE0044518.

MLA Handbook (7th Edition):

Chaudhari, Vaibhav U. “Growth of Indium Nitride and Gallium Nitride on Silicon Using Metal Organic Hydride Vapor Phase Epitaxy.” 2012. Web. 30 Mar 2020.

Vancouver:

Chaudhari VU. Growth of Indium Nitride and Gallium Nitride on Silicon Using Metal Organic Hydride Vapor Phase Epitaxy. [Internet] [Doctoral dissertation]. University of Florida; 2012. [cited 2020 Mar 30]. Available from: http://ufdc.ufl.edu/UFE0044518.

Council of Science Editors:

Chaudhari VU. Growth of Indium Nitride and Gallium Nitride on Silicon Using Metal Organic Hydride Vapor Phase Epitaxy. [Doctoral Dissertation]. University of Florida; 2012. Available from: http://ufdc.ufl.edu/UFE0044518


Universidade Nova

16. Romero, José António Rodrigues. Optical Characterization of GaN.

Degree: 2017, Universidade Nova

 Gallium nitride is a direct bandgap semiconductor commonly used in LED’s and lasers. Its wide bandgap, high thermal conductivity and ability to operate at high… (more)

Subjects/Keywords: Gallium Nitride; MBE; HVPE; MOCVD; SHG; Ellipsometry; Domínio/Área Científica::Engenharia e Tecnologia::Outras Engenharias e Tecnologias

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APA (6th Edition):

Romero, J. A. R. (2017). Optical Characterization of GaN. (Thesis). Universidade Nova. Retrieved from https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/31309

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Romero, José António Rodrigues. “Optical Characterization of GaN.” 2017. Thesis, Universidade Nova. Accessed March 30, 2020. https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/31309.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Romero, José António Rodrigues. “Optical Characterization of GaN.” 2017. Web. 30 Mar 2020.

Vancouver:

Romero JAR. Optical Characterization of GaN. [Internet] [Thesis]. Universidade Nova; 2017. [cited 2020 Mar 30]. Available from: https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/31309.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Romero JAR. Optical Characterization of GaN. [Thesis]. Universidade Nova; 2017. Available from: https://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/31309

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

17. Jacquemin, Manoël. Structure et propriétés supraconductrices de films de nitrure de niobium épitaxiés par CVD à haute température : Structure and superconducting properties of epitaxial niobium nitride films grown by high tempertaure CVD.

Degree: Docteur es, Matériaux, Mécanique, Génie civil, Electrochimie, 2019, Grenoble Alpes

Les études concernent le développement de dispositifs supraconducteurs de détection de photon unique. Le nitrure niobium (NbN) est un matériau adapté à l’élaboration de fils… (more)

Subjects/Keywords: Haute température; Supraconducteur; Couches minces; Épitaxie; Cvd; Superconductive; Epitaxial; Cvd; High temperature; Thin films; Hvpe; 620

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APA (6th Edition):

Jacquemin, M. (2019). Structure et propriétés supraconductrices de films de nitrure de niobium épitaxiés par CVD à haute température : Structure and superconducting properties of epitaxial niobium nitride films grown by high tempertaure CVD. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2019GREAI054

Chicago Manual of Style (16th Edition):

Jacquemin, Manoël. “Structure et propriétés supraconductrices de films de nitrure de niobium épitaxiés par CVD à haute température : Structure and superconducting properties of epitaxial niobium nitride films grown by high tempertaure CVD.” 2019. Doctoral Dissertation, Grenoble Alpes. Accessed March 30, 2020. http://www.theses.fr/2019GREAI054.

MLA Handbook (7th Edition):

Jacquemin, Manoël. “Structure et propriétés supraconductrices de films de nitrure de niobium épitaxiés par CVD à haute température : Structure and superconducting properties of epitaxial niobium nitride films grown by high tempertaure CVD.” 2019. Web. 30 Mar 2020.

Vancouver:

Jacquemin M. Structure et propriétés supraconductrices de films de nitrure de niobium épitaxiés par CVD à haute température : Structure and superconducting properties of epitaxial niobium nitride films grown by high tempertaure CVD. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2019. [cited 2020 Mar 30]. Available from: http://www.theses.fr/2019GREAI054.

Council of Science Editors:

Jacquemin M. Structure et propriétés supraconductrices de films de nitrure de niobium épitaxiés par CVD à haute température : Structure and superconducting properties of epitaxial niobium nitride films grown by high tempertaure CVD. [Doctoral Dissertation]. Grenoble Alpes; 2019. Available from: http://www.theses.fr/2019GREAI054

18. Lekhal, Kaddour. Le procédé HVPE pour la croissance de nanofils semiconducteurs III-V : The HVPE process for the growth of III-V semiconductor nanowires.

Degree: Docteur es, Physique des Matériaux, 2013, Université Blaise-Pascale, Clermont-Ferrand II

Cette thèse est consacrée à l’étude de l’outil d’épitaxie HVPE (Hydride Vapour Phase Epitaxy) pour la synthèse avec et sans catalyseur de nanofils semiconducteurs GaN… (more)

Subjects/Keywords: Epitaxie en Phase Vapeur par la méthode aux Hydrures (HVPE); Nanofils; Nitrure de gallium (GaN); Arséniure de gallium (GaAs); Croissance catalytique VLS (Vapor-Liquide-Solide); VSS (Vapor-Solide- Solide); Hydride Vapour Phase Epitaxy (HVPE); Nanowires; Gallium nitride (GaN); Gallium arsenide (GaAs); Catalyst growth VLS (Vapour-Liquid-Solid); VSS (Vapour-Solid-Solid)

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APA (6th Edition):

Lekhal, K. (2013). Le procédé HVPE pour la croissance de nanofils semiconducteurs III-V : The HVPE process for the growth of III-V semiconductor nanowires. (Doctoral Dissertation). Université Blaise-Pascale, Clermont-Ferrand II. Retrieved from http://www.theses.fr/2013CLF22339

Chicago Manual of Style (16th Edition):

Lekhal, Kaddour. “Le procédé HVPE pour la croissance de nanofils semiconducteurs III-V : The HVPE process for the growth of III-V semiconductor nanowires.” 2013. Doctoral Dissertation, Université Blaise-Pascale, Clermont-Ferrand II. Accessed March 30, 2020. http://www.theses.fr/2013CLF22339.

MLA Handbook (7th Edition):

Lekhal, Kaddour. “Le procédé HVPE pour la croissance de nanofils semiconducteurs III-V : The HVPE process for the growth of III-V semiconductor nanowires.” 2013. Web. 30 Mar 2020.

Vancouver:

Lekhal K. Le procédé HVPE pour la croissance de nanofils semiconducteurs III-V : The HVPE process for the growth of III-V semiconductor nanowires. [Internet] [Doctoral dissertation]. Université Blaise-Pascale, Clermont-Ferrand II; 2013. [cited 2020 Mar 30]. Available from: http://www.theses.fr/2013CLF22339.

Council of Science Editors:

Lekhal K. Le procédé HVPE pour la croissance de nanofils semiconducteurs III-V : The HVPE process for the growth of III-V semiconductor nanowires. [Doctoral Dissertation]. Université Blaise-Pascale, Clermont-Ferrand II; 2013. Available from: http://www.theses.fr/2013CLF22339


Virginia Commonwealth University

19. Spradlin, Joshua K. A Study on the Nature of Anomalous Current Conduction in Gallium Nitride.

Degree: MS, Electrical Engineering, 2005, Virginia Commonwealth University

 Current leakage in GaN thin films limits reliable device fabrication. A variety of Ga and N rich MBE GaN thin films grown by Rf, NH3,… (more)

Subjects/Keywords: photoluminescence; SEM; DLTS; CAFM; mobility; KOH etching; MODFET; resistivity; III-Nitride; III-V; Hall measurements; silvaco; schottky diode; illumination; polarization; MBE; MOCVD; HVPE; semiconductor; Electrical and Computer Engineering; Engineering

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APA (6th Edition):

Spradlin, J. K. (2005). A Study on the Nature of Anomalous Current Conduction in Gallium Nitride. (Thesis). Virginia Commonwealth University. Retrieved from https://doi.org/10.25772/05RV-JE10 ; https://scholarscompass.vcu.edu/etd/709

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Spradlin, Joshua K. “A Study on the Nature of Anomalous Current Conduction in Gallium Nitride.” 2005. Thesis, Virginia Commonwealth University. Accessed March 30, 2020. https://doi.org/10.25772/05RV-JE10 ; https://scholarscompass.vcu.edu/etd/709.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Spradlin, Joshua K. “A Study on the Nature of Anomalous Current Conduction in Gallium Nitride.” 2005. Web. 30 Mar 2020.

Vancouver:

Spradlin JK. A Study on the Nature of Anomalous Current Conduction in Gallium Nitride. [Internet] [Thesis]. Virginia Commonwealth University; 2005. [cited 2020 Mar 30]. Available from: https://doi.org/10.25772/05RV-JE10 ; https://scholarscompass.vcu.edu/etd/709.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Spradlin JK. A Study on the Nature of Anomalous Current Conduction in Gallium Nitride. [Thesis]. Virginia Commonwealth University; 2005. Available from: https://doi.org/10.25772/05RV-JE10 ; https://scholarscompass.vcu.edu/etd/709

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

.