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You searched for subject:(HEMT). Showing records 1 – 30 of 227 total matches.

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Universidad de Cantabria

1. Mimouni, Asmae. Estudio y modelado de la fiabilidad y estrés térmicos en transistores GaN para aplicaciones de microondas.

Degree: 2012, Universidad de Cantabria

 En este trabajo se analizan los fenómenos de degradación presentes en GaN HEMT, bajo condiciones de fuerte campo eléctrico; se presentan modelos de degradación. Se… (more)

Subjects/Keywords: HEMT

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mimouni, A. (2012). Estudio y modelado de la fiabilidad y estrés térmicos en transistores GaN para aplicaciones de microondas. (Doctoral Dissertation). Universidad de Cantabria. Retrieved from http://hdl.handle.net/10902/1916

Chicago Manual of Style (16th Edition):

Mimouni, Asmae. “Estudio y modelado de la fiabilidad y estrés térmicos en transistores GaN para aplicaciones de microondas.” 2012. Doctoral Dissertation, Universidad de Cantabria. Accessed February 26, 2020. http://hdl.handle.net/10902/1916.

MLA Handbook (7th Edition):

Mimouni, Asmae. “Estudio y modelado de la fiabilidad y estrés térmicos en transistores GaN para aplicaciones de microondas.” 2012. Web. 26 Feb 2020.

Vancouver:

Mimouni A. Estudio y modelado de la fiabilidad y estrés térmicos en transistores GaN para aplicaciones de microondas. [Internet] [Doctoral dissertation]. Universidad de Cantabria; 2012. [cited 2020 Feb 26]. Available from: http://hdl.handle.net/10902/1916.

Council of Science Editors:

Mimouni A. Estudio y modelado de la fiabilidad y estrés térmicos en transistores GaN para aplicaciones de microondas. [Doctoral Dissertation]. Universidad de Cantabria; 2012. Available from: http://hdl.handle.net/10902/1916


Universidad de Cantabria

2. Zamanillo Sainz de la Maza, José María. Metodología para la extracción lineal y no-lineal de modelos circuitales para dispositivos MESFET y HEMT de media-alta potencia.

Degree: 2010, Universidad de Cantabria

 RESUMEN: En la presente tesis se muestra una nueva metodología de extracción "inteligente" de modelos circuitales lineales y no lineales para dispositivos MESFET y HEMT,… (more)

Subjects/Keywords: HEMT

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APA (6th Edition):

Zamanillo Sainz de la Maza, J. M. (2010). Metodología para la extracción lineal y no-lineal de modelos circuitales para dispositivos MESFET y HEMT de media-alta potencia. (Doctoral Dissertation). Universidad de Cantabria. Retrieved from http://hdl.handle.net/10902/1405

Chicago Manual of Style (16th Edition):

Zamanillo Sainz de la Maza, José María. “Metodología para la extracción lineal y no-lineal de modelos circuitales para dispositivos MESFET y HEMT de media-alta potencia.” 2010. Doctoral Dissertation, Universidad de Cantabria. Accessed February 26, 2020. http://hdl.handle.net/10902/1405.

MLA Handbook (7th Edition):

Zamanillo Sainz de la Maza, José María. “Metodología para la extracción lineal y no-lineal de modelos circuitales para dispositivos MESFET y HEMT de media-alta potencia.” 2010. Web. 26 Feb 2020.

Vancouver:

Zamanillo Sainz de la Maza JM. Metodología para la extracción lineal y no-lineal de modelos circuitales para dispositivos MESFET y HEMT de media-alta potencia. [Internet] [Doctoral dissertation]. Universidad de Cantabria; 2010. [cited 2020 Feb 26]. Available from: http://hdl.handle.net/10902/1405.

Council of Science Editors:

Zamanillo Sainz de la Maza JM. Metodología para la extracción lineal y no-lineal de modelos circuitales para dispositivos MESFET y HEMT de media-alta potencia. [Doctoral Dissertation]. Universidad de Cantabria; 2010. Available from: http://hdl.handle.net/10902/1405

3. Cibie, Anthony. Substrats innovants pour des composants de puissance à base de GaN : Innovative substrates for GaN-based power devices.

Degree: Docteur es, Matériaux, Mécanique, Génie civil, Electrochimie, 2019, Grenoble Alpes

A l’heure actuelle, le marché de l’électronique de puissance est dominé par les composants silicium. Néanmoins, de nouveaux matériaux comme le nitrure de gallium ont… (more)

Subjects/Keywords: Hemt; Collage direct; Hemt; Direct bonding; 540

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APA (6th Edition):

Cibie, A. (2019). Substrats innovants pour des composants de puissance à base de GaN : Innovative substrates for GaN-based power devices. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2019GREAI014

Chicago Manual of Style (16th Edition):

Cibie, Anthony. “Substrats innovants pour des composants de puissance à base de GaN : Innovative substrates for GaN-based power devices.” 2019. Doctoral Dissertation, Grenoble Alpes. Accessed February 26, 2020. http://www.theses.fr/2019GREAI014.

MLA Handbook (7th Edition):

Cibie, Anthony. “Substrats innovants pour des composants de puissance à base de GaN : Innovative substrates for GaN-based power devices.” 2019. Web. 26 Feb 2020.

Vancouver:

Cibie A. Substrats innovants pour des composants de puissance à base de GaN : Innovative substrates for GaN-based power devices. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2019. [cited 2020 Feb 26]. Available from: http://www.theses.fr/2019GREAI014.

Council of Science Editors:

Cibie A. Substrats innovants pour des composants de puissance à base de GaN : Innovative substrates for GaN-based power devices. [Doctoral Dissertation]. Grenoble Alpes; 2019. Available from: http://www.theses.fr/2019GREAI014


Université de Sherbrooke

4. Cozette, Flavien. Mesure de la température de transistors de type HEMT AlGaN/GaN en régime de fonctionnement hyperfréquence .

Degree: 2018, Université de Sherbrooke

 Le développement de composants de puissance pour les applications hyperfréquence représente un formidable défi qui doit conduire à l’amélioration des systèmes radars, spatiales ou de… (more)

Subjects/Keywords: GaN; HEMT; Température; Capteur; Hyperfréquence

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APA (6th Edition):

Cozette, F. (2018). Mesure de la température de transistors de type HEMT AlGaN/GaN en régime de fonctionnement hyperfréquence . (Doctoral Dissertation). Université de Sherbrooke. Retrieved from http://hdl.handle.net/11143/14480

Chicago Manual of Style (16th Edition):

Cozette, Flavien. “Mesure de la température de transistors de type HEMT AlGaN/GaN en régime de fonctionnement hyperfréquence .” 2018. Doctoral Dissertation, Université de Sherbrooke. Accessed February 26, 2020. http://hdl.handle.net/11143/14480.

MLA Handbook (7th Edition):

Cozette, Flavien. “Mesure de la température de transistors de type HEMT AlGaN/GaN en régime de fonctionnement hyperfréquence .” 2018. Web. 26 Feb 2020.

Vancouver:

Cozette F. Mesure de la température de transistors de type HEMT AlGaN/GaN en régime de fonctionnement hyperfréquence . [Internet] [Doctoral dissertation]. Université de Sherbrooke; 2018. [cited 2020 Feb 26]. Available from: http://hdl.handle.net/11143/14480.

Council of Science Editors:

Cozette F. Mesure de la température de transistors de type HEMT AlGaN/GaN en régime de fonctionnement hyperfréquence . [Doctoral Dissertation]. Université de Sherbrooke; 2018. Available from: http://hdl.handle.net/11143/14480


Cornell University

5. Brown, Richard. Advanced Dielectrics For Gallium Nitride Power Electronics .

Degree: 2011, Cornell University

 This dissertation details the synthesis, characterization, and application of low-pressure chemical vapor deposited (LPCVD) Aluminum Silicon Nitride (Al x Siy Nz ) dielectrics to AlGaN/GaN… (more)

Subjects/Keywords: Gallium Nitride; hemt; Dielectric

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APA (6th Edition):

Brown, R. (2011). Advanced Dielectrics For Gallium Nitride Power Electronics . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/33475

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Brown, Richard. “Advanced Dielectrics For Gallium Nitride Power Electronics .” 2011. Thesis, Cornell University. Accessed February 26, 2020. http://hdl.handle.net/1813/33475.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Brown, Richard. “Advanced Dielectrics For Gallium Nitride Power Electronics .” 2011. Web. 26 Feb 2020.

Vancouver:

Brown R. Advanced Dielectrics For Gallium Nitride Power Electronics . [Internet] [Thesis]. Cornell University; 2011. [cited 2020 Feb 26]. Available from: http://hdl.handle.net/1813/33475.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Brown R. Advanced Dielectrics For Gallium Nitride Power Electronics . [Thesis]. Cornell University; 2011. Available from: http://hdl.handle.net/1813/33475

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


UCLA

6. Zhang, Teng. Thermal Stability and Degradation Analysis of GaN/AlGaN Heterostructure.

Degree: Materials Science and Engineering, 2018, UCLA

 AlGaN/GaN heterostructure is one of the most important materials in applications like High Electron Mobility Transistors (HEMT) and other high speed high power devices. Harsh… (more)

Subjects/Keywords: Engineering; GaN; HEMT; Heterostructure; XRD

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APA (6th Edition):

Zhang, T. (2018). Thermal Stability and Degradation Analysis of GaN/AlGaN Heterostructure. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/68r3b1ww

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhang, Teng. “Thermal Stability and Degradation Analysis of GaN/AlGaN Heterostructure.” 2018. Thesis, UCLA. Accessed February 26, 2020. http://www.escholarship.org/uc/item/68r3b1ww.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhang, Teng. “Thermal Stability and Degradation Analysis of GaN/AlGaN Heterostructure.” 2018. Web. 26 Feb 2020.

Vancouver:

Zhang T. Thermal Stability and Degradation Analysis of GaN/AlGaN Heterostructure. [Internet] [Thesis]. UCLA; 2018. [cited 2020 Feb 26]. Available from: http://www.escholarship.org/uc/item/68r3b1ww.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang T. Thermal Stability and Degradation Analysis of GaN/AlGaN Heterostructure. [Thesis]. UCLA; 2018. Available from: http://www.escholarship.org/uc/item/68r3b1ww

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Duke University

7. Jiao, Wenyuan. Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy .

Degree: 2015, Duke University

  InAlN thin films and InAlN/GaN heterostructures have been intensively studied over recent years due to their applications in a variety of devices, including high… (more)

Subjects/Keywords: Electrical engineering; HEMT; InAlN; MBE

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APA (6th Edition):

Jiao, W. (2015). Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy . (Thesis). Duke University. Retrieved from http://hdl.handle.net/10161/11323

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jiao, Wenyuan. “Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy .” 2015. Thesis, Duke University. Accessed February 26, 2020. http://hdl.handle.net/10161/11323.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jiao, Wenyuan. “Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy .” 2015. Web. 26 Feb 2020.

Vancouver:

Jiao W. Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy . [Internet] [Thesis]. Duke University; 2015. [cited 2020 Feb 26]. Available from: http://hdl.handle.net/10161/11323.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jiao W. Properties of InAlN/GaN Heterostructures Prepared by Molecular Beam Epitaxy . [Thesis]. Duke University; 2015. Available from: http://hdl.handle.net/10161/11323

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

8. Douvry, Yannick. Étude de HEMTs AlGaN/GaN à grand développement pour la puissance hyperfréquence : conception et fabrication, caractérisation et fiabilité : Large periphery AlGaN/GaN HEMTs study for high-power microwave applications : design and fabrication, measurement and reliability.

Degree: Docteur es, Micro et nanotechnologies, acoustique et télécommunications, 2012, Université Lille I – Sciences et Technologies

Cette thèse expose les travaux effectués au sein du laboratoire central de l’IEMN. La finalité de ce travail est de participer a l’optimisation des transistors… (more)

Subjects/Keywords: Hemt; 621.381 528 4

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APA (6th Edition):

Douvry, Y. (2012). Étude de HEMTs AlGaN/GaN à grand développement pour la puissance hyperfréquence : conception et fabrication, caractérisation et fiabilité : Large periphery AlGaN/GaN HEMTs study for high-power microwave applications : design and fabrication, measurement and reliability. (Doctoral Dissertation). Université Lille I – Sciences et Technologies. Retrieved from http://www.theses.fr/2012LIL10131

Chicago Manual of Style (16th Edition):

Douvry, Yannick. “Étude de HEMTs AlGaN/GaN à grand développement pour la puissance hyperfréquence : conception et fabrication, caractérisation et fiabilité : Large periphery AlGaN/GaN HEMTs study for high-power microwave applications : design and fabrication, measurement and reliability.” 2012. Doctoral Dissertation, Université Lille I – Sciences et Technologies. Accessed February 26, 2020. http://www.theses.fr/2012LIL10131.

MLA Handbook (7th Edition):

Douvry, Yannick. “Étude de HEMTs AlGaN/GaN à grand développement pour la puissance hyperfréquence : conception et fabrication, caractérisation et fiabilité : Large periphery AlGaN/GaN HEMTs study for high-power microwave applications : design and fabrication, measurement and reliability.” 2012. Web. 26 Feb 2020.

Vancouver:

Douvry Y. Étude de HEMTs AlGaN/GaN à grand développement pour la puissance hyperfréquence : conception et fabrication, caractérisation et fiabilité : Large periphery AlGaN/GaN HEMTs study for high-power microwave applications : design and fabrication, measurement and reliability. [Internet] [Doctoral dissertation]. Université Lille I – Sciences et Technologies; 2012. [cited 2020 Feb 26]. Available from: http://www.theses.fr/2012LIL10131.

Council of Science Editors:

Douvry Y. Étude de HEMTs AlGaN/GaN à grand développement pour la puissance hyperfréquence : conception et fabrication, caractérisation et fiabilité : Large periphery AlGaN/GaN HEMTs study for high-power microwave applications : design and fabrication, measurement and reliability. [Doctoral Dissertation]. Université Lille I – Sciences et Technologies; 2012. Available from: http://www.theses.fr/2012LIL10131

9. Lehmann, Jonathan. Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance : Electrical characterization of AlGaN/GaN heterostructures for power applications.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Grenoble Alpes

Cette thèse s'inscrit dans le cadre du développement de transistors de puissance HEMT à base de nitrure de gallium au CEA. Les HEMT AlGaN/GaN sont… (more)

Subjects/Keywords: HEMT; AlGaN GaN; Caractérisation électrique; HEMT; AlGaN GaN; Electrical characterization; 620

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APA (6th Edition):

Lehmann, J. (2015). Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance : Electrical characterization of AlGaN/GaN heterostructures for power applications. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAT081

Chicago Manual of Style (16th Edition):

Lehmann, Jonathan. “Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance : Electrical characterization of AlGaN/GaN heterostructures for power applications.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed February 26, 2020. http://www.theses.fr/2015GREAT081.

MLA Handbook (7th Edition):

Lehmann, Jonathan. “Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance : Electrical characterization of AlGaN/GaN heterostructures for power applications.” 2015. Web. 26 Feb 2020.

Vancouver:

Lehmann J. Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance : Electrical characterization of AlGaN/GaN heterostructures for power applications. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2020 Feb 26]. Available from: http://www.theses.fr/2015GREAT081.

Council of Science Editors:

Lehmann J. Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance : Electrical characterization of AlGaN/GaN heterostructures for power applications. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAT081


Wright State University

10. Langley, Derrick. AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling.

Degree: MSEgr, Electrical Engineering, 2007, Wright State University

 Investigation has been done on procedure, development, and verification of transistor topology for Aluminum-Gallium Nitride/Gallium Nitride (AlGaN/GaN) High-Electron Mobility Transistor (HEMTs). To date various models… (more)

Subjects/Keywords: AlGaN/GaN HEMT Transistor topology modeling

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APA (6th Edition):

Langley, D. (2007). AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling. (Masters Thesis). Wright State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=wright1177728294

Chicago Manual of Style (16th Edition):

Langley, Derrick. “AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling.” 2007. Masters Thesis, Wright State University. Accessed February 26, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=wright1177728294.

MLA Handbook (7th Edition):

Langley, Derrick. “AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling.” 2007. Web. 26 Feb 2020.

Vancouver:

Langley D. AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling. [Internet] [Masters thesis]. Wright State University; 2007. [cited 2020 Feb 26]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=wright1177728294.

Council of Science Editors:

Langley D. AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling. [Masters Thesis]. Wright State University; 2007. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=wright1177728294


NSYSU

11. Chen , Pei-Hsien. Detection of pancreas cancer markers CEA and CA19-9 antigen by AlGaN/GaN high electron mobility transistor biosensor.

Degree: Master, Physics, 2017, NSYSU

 AlGaN / GaN high electron mobility transistors (HEMTs) have the advantages of high electron mobility, high sensitivity, and high efficiency. Therefore, HEMTs are suitable for… (more)

Subjects/Keywords: CA19-9; biosensor; CEA; AlGaN/GaN HEMT

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APA (6th Edition):

Chen , P. (2017). Detection of pancreas cancer markers CEA and CA19-9 antigen by AlGaN/GaN high electron mobility transistor biosensor. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0408117-194004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen , Pei-Hsien. “Detection of pancreas cancer markers CEA and CA19-9 antigen by AlGaN/GaN high electron mobility transistor biosensor.” 2017. Thesis, NSYSU. Accessed February 26, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0408117-194004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen , Pei-Hsien. “Detection of pancreas cancer markers CEA and CA19-9 antigen by AlGaN/GaN high electron mobility transistor biosensor.” 2017. Web. 26 Feb 2020.

Vancouver:

Chen P. Detection of pancreas cancer markers CEA and CA19-9 antigen by AlGaN/GaN high electron mobility transistor biosensor. [Internet] [Thesis]. NSYSU; 2017. [cited 2020 Feb 26]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0408117-194004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen P. Detection of pancreas cancer markers CEA and CA19-9 antigen by AlGaN/GaN high electron mobility transistor biosensor. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0408117-194004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

12. Kao, Wei-Chieh. IMPACT OF INTERFACE STATES ON.

Degree: MS, Electrical Engineering, 2010, Penn State University

 In the past four decades, logic transistor scaling following Moore’s Law has resulted in unprecedented increase in logic performance. However, the exponentially rising transistor count… (more)

Subjects/Keywords: Interface states; HEMT; Tunnel FET; InGaAs; MOSFET

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APA (6th Edition):

Kao, W. (2010). IMPACT OF INTERFACE STATES ON. (Masters Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/10880

Chicago Manual of Style (16th Edition):

Kao, Wei-Chieh. “IMPACT OF INTERFACE STATES ON.” 2010. Masters Thesis, Penn State University. Accessed February 26, 2020. https://etda.libraries.psu.edu/catalog/10880.

MLA Handbook (7th Edition):

Kao, Wei-Chieh. “IMPACT OF INTERFACE STATES ON.” 2010. Web. 26 Feb 2020.

Vancouver:

Kao W. IMPACT OF INTERFACE STATES ON. [Internet] [Masters thesis]. Penn State University; 2010. [cited 2020 Feb 26]. Available from: https://etda.libraries.psu.edu/catalog/10880.

Council of Science Editors:

Kao W. IMPACT OF INTERFACE STATES ON. [Masters Thesis]. Penn State University; 2010. Available from: https://etda.libraries.psu.edu/catalog/10880


Université de Bordeaux I

13. Faqir, Mustapha. Analysis of the physical mechanisms limiting performance and reliability of GaN based HEMTs : Analyse des mécanismes physiques qui limitent les performances et la fiabilité des HEMTs sur GaN.

Degree: Docteur es, Electronique, 2009, Université de Bordeaux I

 Ce manuscrit présente les résultats d’une analyse exhaustive des mécanismes physiques qui limitent les performances et la fiabilité des transistors à haute mobilité d’électrons (HEMT)… (more)

Subjects/Keywords: GaN; HEMT; Simulation physique; Fiabilité; Current collapse

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APA (6th Edition):

Faqir, M. (2009). Analysis of the physical mechanisms limiting performance and reliability of GaN based HEMTs : Analyse des mécanismes physiques qui limitent les performances et la fiabilité des HEMTs sur GaN. (Doctoral Dissertation). Université de Bordeaux I. Retrieved from http://www.theses.fr/2009BOR13773

Chicago Manual of Style (16th Edition):

Faqir, Mustapha. “Analysis of the physical mechanisms limiting performance and reliability of GaN based HEMTs : Analyse des mécanismes physiques qui limitent les performances et la fiabilité des HEMTs sur GaN.” 2009. Doctoral Dissertation, Université de Bordeaux I. Accessed February 26, 2020. http://www.theses.fr/2009BOR13773.

MLA Handbook (7th Edition):

Faqir, Mustapha. “Analysis of the physical mechanisms limiting performance and reliability of GaN based HEMTs : Analyse des mécanismes physiques qui limitent les performances et la fiabilité des HEMTs sur GaN.” 2009. Web. 26 Feb 2020.

Vancouver:

Faqir M. Analysis of the physical mechanisms limiting performance and reliability of GaN based HEMTs : Analyse des mécanismes physiques qui limitent les performances et la fiabilité des HEMTs sur GaN. [Internet] [Doctoral dissertation]. Université de Bordeaux I; 2009. [cited 2020 Feb 26]. Available from: http://www.theses.fr/2009BOR13773.

Council of Science Editors:

Faqir M. Analysis of the physical mechanisms limiting performance and reliability of GaN based HEMTs : Analyse des mécanismes physiques qui limitent les performances et la fiabilité des HEMTs sur GaN. [Doctoral Dissertation]. Université de Bordeaux I; 2009. Available from: http://www.theses.fr/2009BOR13773


Vanderbilt University

14. DasGupta, Sandeepan. DC and small signal degradation in InAs - AlSb HEMTs under hot carrier stress.

Degree: PhD, Electrical Engineering, 2010, Vanderbilt University

 Indium Arsenide (InAs) channel High Electron Mobility Transistors (HEMTs) with Aluminium Antimonide (AlSb) barriers are an exciting option for low power RF applications due to… (more)

Subjects/Keywords: Hot Carrier; HEMT; InAs - AlSb; Reliability

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APA (6th Edition):

DasGupta, S. (2010). DC and small signal degradation in InAs - AlSb HEMTs under hot carrier stress. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11292010-120836/ ;

Chicago Manual of Style (16th Edition):

DasGupta, Sandeepan. “DC and small signal degradation in InAs - AlSb HEMTs under hot carrier stress.” 2010. Doctoral Dissertation, Vanderbilt University. Accessed February 26, 2020. http://etd.library.vanderbilt.edu/available/etd-11292010-120836/ ;.

MLA Handbook (7th Edition):

DasGupta, Sandeepan. “DC and small signal degradation in InAs - AlSb HEMTs under hot carrier stress.” 2010. Web. 26 Feb 2020.

Vancouver:

DasGupta S. DC and small signal degradation in InAs - AlSb HEMTs under hot carrier stress. [Internet] [Doctoral dissertation]. Vanderbilt University; 2010. [cited 2020 Feb 26]. Available from: http://etd.library.vanderbilt.edu/available/etd-11292010-120836/ ;.

Council of Science Editors:

DasGupta S. DC and small signal degradation in InAs - AlSb HEMTs under hot carrier stress. [Doctoral Dissertation]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-11292010-120836/ ;


Universidad de Chile

15. Navarrete Moreno, Francisco José. Caracterización de Transistores Hemt en Banda Q .

Degree: 2011, Universidad de Chile

 Este trabajo de título tiene como objetivo diseñar y construir un sistema de caracterización de transistores HEMT. Este sistema tiene como n determinar el comportamiento… (more)

Subjects/Keywords: Electricidad; Transistores; Astronomía; Radioastronomía; Transistores HEMT

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APA (6th Edition):

Navarrete Moreno, F. J. (2011). Caracterización de Transistores Hemt en Banda Q . (Thesis). Universidad de Chile. Retrieved from http://www.repositorio.uchile.cl/handle/2250/104301

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Navarrete Moreno, Francisco José. “Caracterización de Transistores Hemt en Banda Q .” 2011. Thesis, Universidad de Chile. Accessed February 26, 2020. http://www.repositorio.uchile.cl/handle/2250/104301.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Navarrete Moreno, Francisco José. “Caracterización de Transistores Hemt en Banda Q .” 2011. Web. 26 Feb 2020.

Vancouver:

Navarrete Moreno FJ. Caracterización de Transistores Hemt en Banda Q . [Internet] [Thesis]. Universidad de Chile; 2011. [cited 2020 Feb 26]. Available from: http://www.repositorio.uchile.cl/handle/2250/104301.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Navarrete Moreno FJ. Caracterización de Transistores Hemt en Banda Q . [Thesis]. Universidad de Chile; 2011. Available from: http://www.repositorio.uchile.cl/handle/2250/104301

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

16. Medrel, Pierre. Amplification de puissance linéaire à haut rendement en technologie GaN intégrant un contrôle de polarisation de grille : Linear and high efficiency microwave GaN-based power amplification with a gate bias control.

Degree: Docteur es, Electronique des Hautes Fréquences, Photonique et Systèmes, 2014, Limoges

Cette thèse s’inscrit dans le domaine de l’amplification de puissance microonde linéaire et haut rendement en technologie GaN. Le premier chapitre décrit le contexte général… (more)

Subjects/Keywords: Amplificateur de puissance RF; GaN HEMT; RF power amplifier; GaN HEMT; 621.381 3

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APA (6th Edition):

Medrel, P. (2014). Amplification de puissance linéaire à haut rendement en technologie GaN intégrant un contrôle de polarisation de grille : Linear and high efficiency microwave GaN-based power amplification with a gate bias control. (Doctoral Dissertation). Limoges. Retrieved from http://www.theses.fr/2014LIMO0006

Chicago Manual of Style (16th Edition):

Medrel, Pierre. “Amplification de puissance linéaire à haut rendement en technologie GaN intégrant un contrôle de polarisation de grille : Linear and high efficiency microwave GaN-based power amplification with a gate bias control.” 2014. Doctoral Dissertation, Limoges. Accessed February 26, 2020. http://www.theses.fr/2014LIMO0006.

MLA Handbook (7th Edition):

Medrel, Pierre. “Amplification de puissance linéaire à haut rendement en technologie GaN intégrant un contrôle de polarisation de grille : Linear and high efficiency microwave GaN-based power amplification with a gate bias control.” 2014. Web. 26 Feb 2020.

Vancouver:

Medrel P. Amplification de puissance linéaire à haut rendement en technologie GaN intégrant un contrôle de polarisation de grille : Linear and high efficiency microwave GaN-based power amplification with a gate bias control. [Internet] [Doctoral dissertation]. Limoges; 2014. [cited 2020 Feb 26]. Available from: http://www.theses.fr/2014LIMO0006.

Council of Science Editors:

Medrel P. Amplification de puissance linéaire à haut rendement en technologie GaN intégrant un contrôle de polarisation de grille : Linear and high efficiency microwave GaN-based power amplification with a gate bias control. [Doctoral Dissertation]. Limoges; 2014. Available from: http://www.theses.fr/2014LIMO0006


Université de Grenoble

17. Vittoz, Stéphane. Modélisation et caractérisation de capteurs mécaniques intégrés à base d'hétérostructures A1GaN/GaN pour les environnements hostiles : Modeling and test of integrated mechanical sensors based on AlGaN/GaN heterostructures for harsh environments.

Degree: Docteur es, Micro et nanoélectronique, 2011, Université de Grenoble

Certains domaines d'applications tels que l'aérospatial, l'automobile ou le forage de haute profondeur peuvent nécessiter la visualisation de certains paramètres physiques dans des environnements hostiles.… (more)

Subjects/Keywords: AlGaN/GaN; Pression; Déformation; HEMT; Conditions sévères; AlGaN/GaN; Pressure; Strain; HEMT; Harsh environment

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APA (6th Edition):

Vittoz, S. (2011). Modélisation et caractérisation de capteurs mécaniques intégrés à base d'hétérostructures A1GaN/GaN pour les environnements hostiles : Modeling and test of integrated mechanical sensors based on AlGaN/GaN heterostructures for harsh environments. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2011GRENT064

Chicago Manual of Style (16th Edition):

Vittoz, Stéphane. “Modélisation et caractérisation de capteurs mécaniques intégrés à base d'hétérostructures A1GaN/GaN pour les environnements hostiles : Modeling and test of integrated mechanical sensors based on AlGaN/GaN heterostructures for harsh environments.” 2011. Doctoral Dissertation, Université de Grenoble. Accessed February 26, 2020. http://www.theses.fr/2011GRENT064.

MLA Handbook (7th Edition):

Vittoz, Stéphane. “Modélisation et caractérisation de capteurs mécaniques intégrés à base d'hétérostructures A1GaN/GaN pour les environnements hostiles : Modeling and test of integrated mechanical sensors based on AlGaN/GaN heterostructures for harsh environments.” 2011. Web. 26 Feb 2020.

Vancouver:

Vittoz S. Modélisation et caractérisation de capteurs mécaniques intégrés à base d'hétérostructures A1GaN/GaN pour les environnements hostiles : Modeling and test of integrated mechanical sensors based on AlGaN/GaN heterostructures for harsh environments. [Internet] [Doctoral dissertation]. Université de Grenoble; 2011. [cited 2020 Feb 26]. Available from: http://www.theses.fr/2011GRENT064.

Council of Science Editors:

Vittoz S. Modélisation et caractérisation de capteurs mécaniques intégrés à base d'hétérostructures A1GaN/GaN pour les environnements hostiles : Modeling and test of integrated mechanical sensors based on AlGaN/GaN heterostructures for harsh environments. [Doctoral Dissertation]. Université de Grenoble; 2011. Available from: http://www.theses.fr/2011GRENT064

18. Couvidat, Julien. Contribution à la modélisation de transistors GaN et à la conception d’architectures innovantes d’amplificateurs de puissance à rendement amélioré pour modules d’émission-réception aéroportés : Contribution to GaN transistors modeling and design of novel power amplifier architectures for improved power added efficiency of airborne emit-receiver.

Degree: Docteur es, Electronique des hautes fréquences, photonique et systèmes, 2019, Limoges

Les transistors à base de nitrure de gallium (GaN) ont, de par leurs propriétés physiques, des performances inégalables par les technologies classiques à base de… (more)

Subjects/Keywords: GaN; HEMT; Modélisation; Pièges; Amplificateur de puissance; GaN; HEMT; Modeling; Traps; HPA; 621.381 5

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APA (6th Edition):

Couvidat, J. (2019). Contribution à la modélisation de transistors GaN et à la conception d’architectures innovantes d’amplificateurs de puissance à rendement amélioré pour modules d’émission-réception aéroportés : Contribution to GaN transistors modeling and design of novel power amplifier architectures for improved power added efficiency of airborne emit-receiver. (Doctoral Dissertation). Limoges. Retrieved from http://www.theses.fr/2019LIMO0019

Chicago Manual of Style (16th Edition):

Couvidat, Julien. “Contribution à la modélisation de transistors GaN et à la conception d’architectures innovantes d’amplificateurs de puissance à rendement amélioré pour modules d’émission-réception aéroportés : Contribution to GaN transistors modeling and design of novel power amplifier architectures for improved power added efficiency of airborne emit-receiver.” 2019. Doctoral Dissertation, Limoges. Accessed February 26, 2020. http://www.theses.fr/2019LIMO0019.

MLA Handbook (7th Edition):

Couvidat, Julien. “Contribution à la modélisation de transistors GaN et à la conception d’architectures innovantes d’amplificateurs de puissance à rendement amélioré pour modules d’émission-réception aéroportés : Contribution to GaN transistors modeling and design of novel power amplifier architectures for improved power added efficiency of airborne emit-receiver.” 2019. Web. 26 Feb 2020.

Vancouver:

Couvidat J. Contribution à la modélisation de transistors GaN et à la conception d’architectures innovantes d’amplificateurs de puissance à rendement amélioré pour modules d’émission-réception aéroportés : Contribution to GaN transistors modeling and design of novel power amplifier architectures for improved power added efficiency of airborne emit-receiver. [Internet] [Doctoral dissertation]. Limoges; 2019. [cited 2020 Feb 26]. Available from: http://www.theses.fr/2019LIMO0019.

Council of Science Editors:

Couvidat J. Contribution à la modélisation de transistors GaN et à la conception d’architectures innovantes d’amplificateurs de puissance à rendement amélioré pour modules d’émission-réception aéroportés : Contribution to GaN transistors modeling and design of novel power amplifier architectures for improved power added efficiency of airborne emit-receiver. [Doctoral Dissertation]. Limoges; 2019. Available from: http://www.theses.fr/2019LIMO0019

19. Mukherjee, Kalparupa. Investigation into trapping mechanisms and impact on performances and reliability of GaN HEMTs through physical simulation and electro-optical characterization : Investigation des mécanismes de piégeage par simulation physique et caractérisation électro-optique et impact sur les performances et la fiabilité des HEMTs GaN.

Degree: Docteur es, Électronique, 2018, Bordeaux

 Le Nitrure de Gallium est devenu un matériau incontournable pour le développement de dispositifs semi-conducteurs aux performances très supérieures aux composants silicium. L'immense potentiel du… (more)

Subjects/Keywords: Fiabilité; Caractérisation; GaN HEMT; Laser; Simulation; Piégeage; Reliability; Characterisation; Traps; GaN HEMT; Laser; Simulation

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APA (6th Edition):

Mukherjee, K. (2018). Investigation into trapping mechanisms and impact on performances and reliability of GaN HEMTs through physical simulation and electro-optical characterization : Investigation des mécanismes de piégeage par simulation physique et caractérisation électro-optique et impact sur les performances et la fiabilité des HEMTs GaN. (Doctoral Dissertation). Bordeaux. Retrieved from http://www.theses.fr/2018BORD0401

Chicago Manual of Style (16th Edition):

Mukherjee, Kalparupa. “Investigation into trapping mechanisms and impact on performances and reliability of GaN HEMTs through physical simulation and electro-optical characterization : Investigation des mécanismes de piégeage par simulation physique et caractérisation électro-optique et impact sur les performances et la fiabilité des HEMTs GaN.” 2018. Doctoral Dissertation, Bordeaux. Accessed February 26, 2020. http://www.theses.fr/2018BORD0401.

MLA Handbook (7th Edition):

Mukherjee, Kalparupa. “Investigation into trapping mechanisms and impact on performances and reliability of GaN HEMTs through physical simulation and electro-optical characterization : Investigation des mécanismes de piégeage par simulation physique et caractérisation électro-optique et impact sur les performances et la fiabilité des HEMTs GaN.” 2018. Web. 26 Feb 2020.

Vancouver:

Mukherjee K. Investigation into trapping mechanisms and impact on performances and reliability of GaN HEMTs through physical simulation and electro-optical characterization : Investigation des mécanismes de piégeage par simulation physique et caractérisation électro-optique et impact sur les performances et la fiabilité des HEMTs GaN. [Internet] [Doctoral dissertation]. Bordeaux; 2018. [cited 2020 Feb 26]. Available from: http://www.theses.fr/2018BORD0401.

Council of Science Editors:

Mukherjee K. Investigation into trapping mechanisms and impact on performances and reliability of GaN HEMTs through physical simulation and electro-optical characterization : Investigation des mécanismes de piégeage par simulation physique et caractérisation électro-optique et impact sur les performances et la fiabilité des HEMTs GaN. [Doctoral Dissertation]. Bordeaux; 2018. Available from: http://www.theses.fr/2018BORD0401

20. Avcu, Mustafa. Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench.

Degree: Docteur es, Electronique des Hautes Fréquences, Photonique et Systèmes, 2014, Limoges

Ce document porte sur le développement d’un nouveau banc de mesure pour la caractérisation de l’impédance thermique des HEMTs GaN. Le banc développé repose sur… (more)

Subjects/Keywords: Méthode 3ω; Impédance thermique; HEMT; AlGaN/GaN; InAlN/GaN; 3ω method; Thermal impedance; HEMT; AlGaN/GaN; InAlN/GaN; 621.381

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APA (6th Edition):

Avcu, M. (2014). Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench. (Doctoral Dissertation). Limoges. Retrieved from http://www.theses.fr/2014LIMO0048

Chicago Manual of Style (16th Edition):

Avcu, Mustafa. “Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench.” 2014. Doctoral Dissertation, Limoges. Accessed February 26, 2020. http://www.theses.fr/2014LIMO0048.

MLA Handbook (7th Edition):

Avcu, Mustafa. “Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench.” 2014. Web. 26 Feb 2020.

Vancouver:

Avcu M. Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench. [Internet] [Doctoral dissertation]. Limoges; 2014. [cited 2020 Feb 26]. Available from: http://www.theses.fr/2014LIMO0048.

Council of Science Editors:

Avcu M. Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench. [Doctoral Dissertation]. Limoges; 2014. Available from: http://www.theses.fr/2014LIMO0048


The Ohio State University

21. Kim, Hyeong Nam. Qualitative and Quantative Characterization of Trapping Effects in AlGaN/GaN High Electron Mobility Transistors.

Degree: PhD, Electrical and Computer Engineering, 2009, The Ohio State University

  GaN-based high electron mobility transistors (HEMTs) have been considered excellent candidates for high power, high speed and high temperature applications due to high breakdown… (more)

Subjects/Keywords: Electrical Engineering; AlGaN/GaN HEMT; trapping effects; electron trapping; HEMT model; device parameter extraction; drift velocity

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APA (6th Edition):

Kim, H. N. (2009). Qualitative and Quantative Characterization of Trapping Effects in AlGaN/GaN High Electron Mobility Transistors. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1250612796

Chicago Manual of Style (16th Edition):

Kim, Hyeong Nam. “Qualitative and Quantative Characterization of Trapping Effects in AlGaN/GaN High Electron Mobility Transistors.” 2009. Doctoral Dissertation, The Ohio State University. Accessed February 26, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250612796.

MLA Handbook (7th Edition):

Kim, Hyeong Nam. “Qualitative and Quantative Characterization of Trapping Effects in AlGaN/GaN High Electron Mobility Transistors.” 2009. Web. 26 Feb 2020.

Vancouver:

Kim HN. Qualitative and Quantative Characterization of Trapping Effects in AlGaN/GaN High Electron Mobility Transistors. [Internet] [Doctoral dissertation]. The Ohio State University; 2009. [cited 2020 Feb 26]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1250612796.

Council of Science Editors:

Kim HN. Qualitative and Quantative Characterization of Trapping Effects in AlGaN/GaN High Electron Mobility Transistors. [Doctoral Dissertation]. The Ohio State University; 2009. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1250612796


Université de Sherbrooke

22. Spisser, Hélène. Développement de capteurs THz utilisant l'hétérostructure AlGaN/GaN .

Degree: 2017, Université de Sherbrooke

 Le domaine du spectre électromagnétique correspondant aux fréquences térahertz est encore peu exploité, pourtant, les applications nécessitant la génération, l’amplification ou la détection d’un signal… (more)

Subjects/Keywords: Terahertz detector; Résonance plasmonique; Plasmonic resonance; Gallium Nitride; Grating-gate HEMT; Capteur térahertz; Nitrure de gallium (GaN); HEMT à grille-réseau

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APA (6th Edition):

Spisser, H. (2017). Développement de capteurs THz utilisant l'hétérostructure AlGaN/GaN . (Doctoral Dissertation). Université de Sherbrooke. Retrieved from http://hdl.handle.net/11143/10290

Chicago Manual of Style (16th Edition):

Spisser, Hélène. “Développement de capteurs THz utilisant l'hétérostructure AlGaN/GaN .” 2017. Doctoral Dissertation, Université de Sherbrooke. Accessed February 26, 2020. http://hdl.handle.net/11143/10290.

MLA Handbook (7th Edition):

Spisser, Hélène. “Développement de capteurs THz utilisant l'hétérostructure AlGaN/GaN .” 2017. Web. 26 Feb 2020.

Vancouver:

Spisser H. Développement de capteurs THz utilisant l'hétérostructure AlGaN/GaN . [Internet] [Doctoral dissertation]. Université de Sherbrooke; 2017. [cited 2020 Feb 26]. Available from: http://hdl.handle.net/11143/10290.

Council of Science Editors:

Spisser H. Développement de capteurs THz utilisant l'hétérostructure AlGaN/GaN . [Doctoral Dissertation]. Université de Sherbrooke; 2017. Available from: http://hdl.handle.net/11143/10290


Université Montpellier II

23. Nouvel, Philippe. Etude expérimentale des oscillations de plasma dans des transistors à effet de champ excitées optiquement : Experimental study of plasma oscillations in field effect transistors optically excited.

Degree: Docteur es, Electronique, 2011, Université Montpellier II

Le domaine térahertz est une région du spectre électromagnétique comprise entre 300 GHz et 30 THz. Elle représente un fort intérêt pour la communauté scientifique… (more)

Subjects/Keywords: Terahertz; Ondes de plasma; Hemt; Emetteur; Mélangeur; Battement optique; Terahertz; Plasma waves; Hemt; Emetter; Mixer; Optical beating

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APA (6th Edition):

Nouvel, P. (2011). Etude expérimentale des oscillations de plasma dans des transistors à effet de champ excitées optiquement : Experimental study of plasma oscillations in field effect transistors optically excited. (Doctoral Dissertation). Université Montpellier II. Retrieved from http://www.theses.fr/2011MON20189

Chicago Manual of Style (16th Edition):

Nouvel, Philippe. “Etude expérimentale des oscillations de plasma dans des transistors à effet de champ excitées optiquement : Experimental study of plasma oscillations in field effect transistors optically excited.” 2011. Doctoral Dissertation, Université Montpellier II. Accessed February 26, 2020. http://www.theses.fr/2011MON20189.

MLA Handbook (7th Edition):

Nouvel, Philippe. “Etude expérimentale des oscillations de plasma dans des transistors à effet de champ excitées optiquement : Experimental study of plasma oscillations in field effect transistors optically excited.” 2011. Web. 26 Feb 2020.

Vancouver:

Nouvel P. Etude expérimentale des oscillations de plasma dans des transistors à effet de champ excitées optiquement : Experimental study of plasma oscillations in field effect transistors optically excited. [Internet] [Doctoral dissertation]. Université Montpellier II; 2011. [cited 2020 Feb 26]. Available from: http://www.theses.fr/2011MON20189.

Council of Science Editors:

Nouvel P. Etude expérimentale des oscillations de plasma dans des transistors à effet de champ excitées optiquement : Experimental study of plasma oscillations in field effect transistors optically excited. [Doctoral Dissertation]. Université Montpellier II; 2011. Available from: http://www.theses.fr/2011MON20189

24. Brunel, Laurent. Contribution à l'assurance fiabilité de filières HEMTs à base de GaN sur substrat SiC : caractérisation électrique approfondie et modélisaton des effets parasites : Contribution in reliability insurance of GaN HEMT on SiC substrate : electrical characterization and modeling of parasitic effects.

Degree: Docteur es, Electronique, 2014, Bordeaux

Ces travaux s'inscrivent dans le cadre de la qualification des technologies GaN de UMS et plus particulièrement celle de la technologie GH25, et a pour… (more)

Subjects/Keywords: HEMT; GaN; Fiabilité; Effets parasites; Transitoire de courant de drain; HEMT; GaN; Reliability; Parasitic effects; Drain current transient

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APA (6th Edition):

Brunel, L. (2014). Contribution à l'assurance fiabilité de filières HEMTs à base de GaN sur substrat SiC : caractérisation électrique approfondie et modélisaton des effets parasites : Contribution in reliability insurance of GaN HEMT on SiC substrate : electrical characterization and modeling of parasitic effects. (Doctoral Dissertation). Bordeaux. Retrieved from http://www.theses.fr/2014BORD0080

Chicago Manual of Style (16th Edition):

Brunel, Laurent. “Contribution à l'assurance fiabilité de filières HEMTs à base de GaN sur substrat SiC : caractérisation électrique approfondie et modélisaton des effets parasites : Contribution in reliability insurance of GaN HEMT on SiC substrate : electrical characterization and modeling of parasitic effects.” 2014. Doctoral Dissertation, Bordeaux. Accessed February 26, 2020. http://www.theses.fr/2014BORD0080.

MLA Handbook (7th Edition):

Brunel, Laurent. “Contribution à l'assurance fiabilité de filières HEMTs à base de GaN sur substrat SiC : caractérisation électrique approfondie et modélisaton des effets parasites : Contribution in reliability insurance of GaN HEMT on SiC substrate : electrical characterization and modeling of parasitic effects.” 2014. Web. 26 Feb 2020.

Vancouver:

Brunel L. Contribution à l'assurance fiabilité de filières HEMTs à base de GaN sur substrat SiC : caractérisation électrique approfondie et modélisaton des effets parasites : Contribution in reliability insurance of GaN HEMT on SiC substrate : electrical characterization and modeling of parasitic effects. [Internet] [Doctoral dissertation]. Bordeaux; 2014. [cited 2020 Feb 26]. Available from: http://www.theses.fr/2014BORD0080.

Council of Science Editors:

Brunel L. Contribution à l'assurance fiabilité de filières HEMTs à base de GaN sur substrat SiC : caractérisation électrique approfondie et modélisaton des effets parasites : Contribution in reliability insurance of GaN HEMT on SiC substrate : electrical characterization and modeling of parasitic effects. [Doctoral Dissertation]. Bordeaux; 2014. Available from: http://www.theses.fr/2014BORD0080

25. Rzin, Mehdi. Deep electrical characterization and modeling of parasitic effects and degradation mechanisms of AlGaN/GaN HEMTs on SiC substrates : Integrated circuit analysis by laser probing techniques.

Degree: Docteur es, Electronique, 2015, Bordeaux

Les travaux de these s’inscrivent dans le cadre de deux projets: ReAGaN et ExtremeGaN avec des industriels (UMS, Serma Technologies, Thales TRT) et des laboratoires… (more)

Subjects/Keywords: HEMT; GaN; Mécanismes de dégradation; Effects parasites; Caractérisation électrique.; HEMT; GaN; Degradation mechanisms; Parasitic effects; Electrical characterization

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APA (6th Edition):

Rzin, M. (2015). Deep electrical characterization and modeling of parasitic effects and degradation mechanisms of AlGaN/GaN HEMTs on SiC substrates : Integrated circuit analysis by laser probing techniques. (Doctoral Dissertation). Bordeaux. Retrieved from http://www.theses.fr/2015BORD0125

Chicago Manual of Style (16th Edition):

Rzin, Mehdi. “Deep electrical characterization and modeling of parasitic effects and degradation mechanisms of AlGaN/GaN HEMTs on SiC substrates : Integrated circuit analysis by laser probing techniques.” 2015. Doctoral Dissertation, Bordeaux. Accessed February 26, 2020. http://www.theses.fr/2015BORD0125.

MLA Handbook (7th Edition):

Rzin, Mehdi. “Deep electrical characterization and modeling of parasitic effects and degradation mechanisms of AlGaN/GaN HEMTs on SiC substrates : Integrated circuit analysis by laser probing techniques.” 2015. Web. 26 Feb 2020.

Vancouver:

Rzin M. Deep electrical characterization and modeling of parasitic effects and degradation mechanisms of AlGaN/GaN HEMTs on SiC substrates : Integrated circuit analysis by laser probing techniques. [Internet] [Doctoral dissertation]. Bordeaux; 2015. [cited 2020 Feb 26]. Available from: http://www.theses.fr/2015BORD0125.

Council of Science Editors:

Rzin M. Deep electrical characterization and modeling of parasitic effects and degradation mechanisms of AlGaN/GaN HEMTs on SiC substrates : Integrated circuit analysis by laser probing techniques. [Doctoral Dissertation]. Bordeaux; 2015. Available from: http://www.theses.fr/2015BORD0125

26. Spisser, Hélène. Développement de capteurs THz utilisant l'hétérostructure AIGaN/GaN : Design of THz detectors using the AlGaN/GaN heterostructure.

Degree: Docteur es, Electronique et optoélectronique, nano- et microtechnologies, 2017, Université Paris-Saclay (ComUE); Université de Sherbrooke (Québec, Canada)

Le domaine du spectre électromagnétique correspondant aux fréquences térahertz est encore peu exploité, pourtant, les applications nécessitant la génération, l’amplification ou la détection d’un signal… (more)

Subjects/Keywords: Capteur térahertz; Nitrure de gallium; Résonance plasmonique; HEMT à grille-réseau; Terahertz detectors; Gallium nitride; Plasmonic resonance; Grating-gate HEMT

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APA (6th Edition):

Spisser, H. (2017). Développement de capteurs THz utilisant l'hétérostructure AIGaN/GaN : Design of THz detectors using the AlGaN/GaN heterostructure. (Doctoral Dissertation). Université Paris-Saclay (ComUE); Université de Sherbrooke (Québec, Canada). Retrieved from http://www.theses.fr/2017SACLS040

Chicago Manual of Style (16th Edition):

Spisser, Hélène. “Développement de capteurs THz utilisant l'hétérostructure AIGaN/GaN : Design of THz detectors using the AlGaN/GaN heterostructure.” 2017. Doctoral Dissertation, Université Paris-Saclay (ComUE); Université de Sherbrooke (Québec, Canada). Accessed February 26, 2020. http://www.theses.fr/2017SACLS040.

MLA Handbook (7th Edition):

Spisser, Hélène. “Développement de capteurs THz utilisant l'hétérostructure AIGaN/GaN : Design of THz detectors using the AlGaN/GaN heterostructure.” 2017. Web. 26 Feb 2020.

Vancouver:

Spisser H. Développement de capteurs THz utilisant l'hétérostructure AIGaN/GaN : Design of THz detectors using the AlGaN/GaN heterostructure. [Internet] [Doctoral dissertation]. Université Paris-Saclay (ComUE); Université de Sherbrooke (Québec, Canada); 2017. [cited 2020 Feb 26]. Available from: http://www.theses.fr/2017SACLS040.

Council of Science Editors:

Spisser H. Développement de capteurs THz utilisant l'hétérostructure AIGaN/GaN : Design of THz detectors using the AlGaN/GaN heterostructure. [Doctoral Dissertation]. Université Paris-Saclay (ComUE); Université de Sherbrooke (Québec, Canada); 2017. Available from: http://www.theses.fr/2017SACLS040


Université Montpellier II

27. Juery, Lucie. Communication térahertz sans fil à haut débit avec un transistor à haute mobilité électronique comme détecteur : High data-rate wireless terahertz communication using a High-electron-mobility transistor as detector.

Degree: Docteur es, Electronique, 2014, Université Montpellier II

Un des objectifs majeurs des systèmes de communication est de pouvoir transmettre des données aux plus hauts débits possibles. La demande croissante des utilisateurs pour… (more)

Subjects/Keywords: Térahertz; Communication; Hemt; Sans fil; Haut débit; Ondes plasma; Terahertz; Communication; Hemt; Wireless; High data-Rate; Plasma waves

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Juery, L. (2014). Communication térahertz sans fil à haut débit avec un transistor à haute mobilité électronique comme détecteur : High data-rate wireless terahertz communication using a High-electron-mobility transistor as detector. (Doctoral Dissertation). Université Montpellier II. Retrieved from http://www.theses.fr/2014MON20115

Chicago Manual of Style (16th Edition):

Juery, Lucie. “Communication térahertz sans fil à haut débit avec un transistor à haute mobilité électronique comme détecteur : High data-rate wireless terahertz communication using a High-electron-mobility transistor as detector.” 2014. Doctoral Dissertation, Université Montpellier II. Accessed February 26, 2020. http://www.theses.fr/2014MON20115.

MLA Handbook (7th Edition):

Juery, Lucie. “Communication térahertz sans fil à haut débit avec un transistor à haute mobilité électronique comme détecteur : High data-rate wireless terahertz communication using a High-electron-mobility transistor as detector.” 2014. Web. 26 Feb 2020.

Vancouver:

Juery L. Communication térahertz sans fil à haut débit avec un transistor à haute mobilité électronique comme détecteur : High data-rate wireless terahertz communication using a High-electron-mobility transistor as detector. [Internet] [Doctoral dissertation]. Université Montpellier II; 2014. [cited 2020 Feb 26]. Available from: http://www.theses.fr/2014MON20115.

Council of Science Editors:

Juery L. Communication térahertz sans fil à haut débit avec un transistor à haute mobilité électronique comme détecteur : High data-rate wireless terahertz communication using a High-electron-mobility transistor as detector. [Doctoral Dissertation]. Université Montpellier II; 2014. Available from: http://www.theses.fr/2014MON20115


Texas A&M University

28. Johnson, Derek Wade. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors.

Degree: 2014, Texas A&M University

 GaN is a promising material for power and radio-frequency electronics due to its high breakdown electric field, thermal conductivity, and electron saturation velocity. Additionally, strong… (more)

Subjects/Keywords: GaN; HEMT; MOS; self-aligned contacts; trap spectroscopy; Au-free; BeO

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APA (6th Edition):

Johnson, D. W. (2014). Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors. (Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/153642

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Johnson, Derek Wade. “Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors.” 2014. Thesis, Texas A&M University. Accessed February 26, 2020. http://hdl.handle.net/1969.1/153642.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Johnson, Derek Wade. “Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors.” 2014. Web. 26 Feb 2020.

Vancouver:

Johnson DW. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors. [Internet] [Thesis]. Texas A&M University; 2014. [cited 2020 Feb 26]. Available from: http://hdl.handle.net/1969.1/153642.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Johnson DW. Si-CMOS-Like Integration of AlGaN/GaN Dielectric-Gated High-Electron-Mobility Transistors. [Thesis]. Texas A&M University; 2014. Available from: http://hdl.handle.net/1969.1/153642

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

29. Bambery, Rohan. Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications.

Degree: MS, 1200, 2011, University of Illinois – Urbana-Champaign

 Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material… (more)

Subjects/Keywords: High Electron Mobility Transistor (HEMT); Aluminium Antimonide (AlSb); Indium Arsenide (InAs)

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APA (6th Edition):

Bambery, R. (2011). Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18297

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bambery, Rohan. “Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications.” 2011. Thesis, University of Illinois – Urbana-Champaign. Accessed February 26, 2020. http://hdl.handle.net/2142/18297.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bambery, Rohan. “Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications.” 2011. Web. 26 Feb 2020.

Vancouver:

Bambery R. Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2011. [cited 2020 Feb 26]. Available from: http://hdl.handle.net/2142/18297.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bambery R. Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications. [Thesis]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18297

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

30. Jorge Alfredo Ferrer Perez. Thermal Study of a GaN-Based HEMT</h1>.

Degree: PhD, Aerospace and Mechanical Engineering, 2012, University of Notre Dame

  Semiconductors have undergone a continual miniaturization process, and heat dissipation has become one of its most challenging problems with respect to applications. Heat is… (more)

Subjects/Keywords: hydrodynamic simulations; heat transfer; photoluminescence; GaN HEMT; hot spots; hot electrons

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APA (6th Edition):

Perez, J. A. F. (2012). Thermal Study of a GaN-Based HEMT</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/wp988g8758r

Chicago Manual of Style (16th Edition):

Perez, Jorge Alfredo Ferrer. “Thermal Study of a GaN-Based HEMT</h1>.” 2012. Doctoral Dissertation, University of Notre Dame. Accessed February 26, 2020. https://curate.nd.edu/show/wp988g8758r.

MLA Handbook (7th Edition):

Perez, Jorge Alfredo Ferrer. “Thermal Study of a GaN-Based HEMT</h1>.” 2012. Web. 26 Feb 2020.

Vancouver:

Perez JAF. Thermal Study of a GaN-Based HEMT</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2012. [cited 2020 Feb 26]. Available from: https://curate.nd.edu/show/wp988g8758r.

Council of Science Editors:

Perez JAF. Thermal Study of a GaN-Based HEMT</h1>. [Doctoral Dissertation]. University of Notre Dame; 2012. Available from: https://curate.nd.edu/show/wp988g8758r

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