subject:(Gasto p blico IDSUS Munic pios)

1. Lu, Zijun. Theoretical and Numerical Analysis of Phase Changes in Soft Condensed Matter.

Degree: PhD, Physics, 2019, Case Western Reserve University School of Graduate Studies

URL: http://rave.ohiolink.edu/etdc/view?acc_num=case15620007885239

► Soft condensed matter is the study of flexible materials that change their shape under the influence of a weak force. Typical examples are polymers and… (more)

▼ Soft condensed matter is the study of flexible materials that change their shape under the influence of a weak force. Typical examples are polymers and liquid crystals. Chromonic liquid crystals consist of molecules having a hydrophobic flat aromatic core to which have been attached ionic groups or non-ionic groups. These disk-like molecules self-assemble into ordered phases in the presence of solvents, aggregating in a face-to-face fashion, and creating stackedlinear molecular aggregates. The degree of self-organization into columns depends on the concentration, temperature, and pressure. Depending on the types of terminal groups, the molecules can be dissolved in organic solvents or water. A theoretical study was performed to model the detailed effects of adding stacking, translation, and rotation energy on the length distribution of chromonic liquid crystals. A second derivative test was done to prove that all the solutions for isotropic phases are at a global minimum of the free energy. The free energies and length distributions for various nematic phase formulations are presented. Free energy and length distribution for both Maier-Saupe and Onsager interactions are presented. The free energy and length distribution for considering I-N phase co-existence and no phase co-existence are presented. It is shown that the nematic phase solutions all lead to a first-order phase transition. The nematic phase solution with the Maier-Saupe interaction causes the averaged aggregate length to increase when the system transitions from the isotropic phase to the nematic phase, while the nematic phase solution with the Onsager interaction causes the averaged aggregate length to decrease.Another major component of this thesis is the study of glass transitions. An analytical study that aims to describe the mean squared displacement at low temperatures is presented. The short-time and long-time limit of the analytical solution are discussed. Then, an approach utilizing machine learning algorithms is developed for predicting the glass transition temperature of polystyrene (PS) and poly(methyl methacrylate) (PMMA) from short-time simulations. This approach predicts a 360K glass transition temperature for PS and 400K for PMMA.It is found that the biggest change in the average Non-Gaussian parameter happens (NGP) at the same temperature as the biggest change in variance of the Non-Gaussian parameter (NGP), namely 420K for PS and 460K for PMMA. The fact that the above temperatures are slightly higher than the glass transition temperatures predicted by our approach above, we hypothesize that the increase in the dynamic heterogeneity is a precursor to the glass transition. Advisors/Committee Members: Taylor, Philip (Advisor), Tsige, Mesfin (Advisor).

Subjects/Keywords: Physics; Polymers; Statistics; Mathematics; machine learning; glass transition; soft condensed matter; chromonic liquid crystals; mixing entropy; stochastic calculus; p second derivative test

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APA (6^th Edition):

Lu, Z. (2019). Theoretical and Numerical Analysis of Phase Changes in Soft Condensed Matter. (Doctoral Dissertation). Case Western Reserve University School of Graduate Studies. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=case15620007885239

Chicago Manual of Style (16^th Edition):

Lu, Zijun. “Theoretical and Numerical Analysis of Phase Changes in Soft Condensed Matter.” 2019. Doctoral Dissertation, Case Western Reserve University School of Graduate Studies. Accessed December 06, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=case15620007885239.

MLA Handbook (7^th Edition):

Lu, Zijun. “Theoretical and Numerical Analysis of Phase Changes in Soft Condensed Matter.” 2019. Web. 06 Dec 2019.

Vancouver:

Lu Z. Theoretical and Numerical Analysis of Phase Changes in Soft Condensed Matter. [Internet] [Doctoral dissertation]. Case Western Reserve University School of Graduate Studies; 2019. [cited 2019 Dec 06]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=case15620007885239.

Council of Science Editors:

Lu Z. Theoretical and Numerical Analysis of Phase Changes in Soft Condensed Matter. [Doctoral Dissertation]. Case Western Reserve University School of Graduate Studies; 2019. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=case15620007885239

NSYSU

2. Liu, Hsi-Wen. Electrical Analysis and Reliability in Advanced Metal Oxide Semiconductor Capacitance and Metal Oxide Semiconductor Field Effect Transistors / Fin Field Effect Transistors.

Degree: PhD, Physics, 2018, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723118-033035

► Metal-oxide-semiconductor-field-effect transistors (MOSFETs) have the advantages of low manufacturing cost, low power consumption and easy scaling down. They are widely used in the IC industry,… (more)

▼ Metal-oxide-semiconductor-field-effect transistors (MOSFETs) have the advantages of low manufacturing cost, low power consumption and easy scaling down. They are widely used in the IC industry, and the MOSFETs continue to shrink with the Moore's Law. When the gate oxide layer is shrunk to a thickness of only 1 nm, the quantum tunneling effect becomes very serious at this scale, resulting in extremely large gate leakage and reliability problems. To continue the scaling down, gate leakage current is the primary problem that must be solved. Therefore, high dielectric constant oxides have been introduced as a solution. The high dielectric constant oxide is grown on the top of SiO2, which allows the gate oxide layer to have a thicker physical thickness and better transistor characteristics. Among many high dielectric constant materials, hafnium-based oxide is the most suitable material for high dielectric gate oxide due to its comprehensive properties. However, pure HfO2 has a low crystallization temperature. It is easy to crystallize after high temperature treatment, causing an increase in gate leakage current. Therefore, additional elements such as N, Si, Al, Ti, Ta and La have been doped into the high-k gate dielectrics to increase crystallization temperature. In addition, dipole can be formed in the oxide layer due to the difference in oxygen density. The dipole can be used to modulate the threshold voltage. The first part of this dissertation uses metal-oxide-semiconductor capacitance (MOSCAP) to investigate the doping dipole in HfO2 effect the electrical characteristic and reliability. We found that the capacitance of gate oxide is increased and gate leakage is decreased in dipole doped sample, but in positive bias temperature instability (PBTI) test is deteriorates severely in dipole doped sample. We consider the explanation is energy band bending due to dipole which causing the electrons has more kinetic energy after tunneling from Si to HfO2, so it is easier to trap and generate defects. In addition, time dependent dielectric breakdown (TDDB) reliability statistics shows the dielectric breakdown correspond to the Weibull distribution, and the dipole doped sample has a shorter lifetime under the same gate voltage. In the second part, we use our laboratory's low temperature supercritical fluid processing technology to perform supercritical hydridation, fluoridation, and nitridation on MOSCAPs. In the supercritical hydridation and fluoridation treatment, There is no obvious change in the electrical characteristics for control sample and dipole sample., but in the reliability test of TDDB, the lifetime of both devices becomes longer. We think this is because supercritical hydridation and fluoridation can repair dangling bond at HfO2/SiO2 interface. In the third part, we used MOSFET to compare the effects of hot carrier degradation (HCD) of zirconium doped into HfO2. Previous n-MOSFET studies have shown that zirconium-doped hafnium oxide reduces charge trapping and improves PBTI. In this study, a significant reduction… Advisors/Committee Members: Min-Chuan, Wang (chair), Pei-Chin, Chiu (chair), Kuang-Yu, Hsieh (chair), Chi-Wen, Chen (chair), Barry Lin (chair), Ting-Chang, Chang (committee member).

Subjects/Keywords: supercritical fluid treatment; P/NBTI; reliability; MOSFET; dipole doping; MOSCAP

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APA (6^th Edition):

Liu, H. (2018). Electrical Analysis and Reliability in Advanced Metal Oxide Semiconductor Capacitance and Metal Oxide Semiconductor Field Effect Transistors / Fin Field Effect Transistors. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723118-033035

Chicago Manual of Style (16^th Edition):

Liu, Hsi-Wen. “Electrical Analysis and Reliability in Advanced Metal Oxide Semiconductor Capacitance and Metal Oxide Semiconductor Field Effect Transistors / Fin Field Effect Transistors.” 2018. Doctoral Dissertation, NSYSU. Accessed December 06, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723118-033035.

MLA Handbook (7^th Edition):

Liu, Hsi-Wen. “Electrical Analysis and Reliability in Advanced Metal Oxide Semiconductor Capacitance and Metal Oxide Semiconductor Field Effect Transistors / Fin Field Effect Transistors.” 2018. Web. 06 Dec 2019.

Vancouver:

Liu H. Electrical Analysis and Reliability in Advanced Metal Oxide Semiconductor Capacitance and Metal Oxide Semiconductor Field Effect Transistors / Fin Field Effect Transistors. [Internet] [Doctoral dissertation]. NSYSU; 2018. [cited 2019 Dec 06]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723118-033035.

Council of Science Editors:

Liu H. Electrical Analysis and Reliability in Advanced Metal Oxide Semiconductor Capacitance and Metal Oxide Semiconductor Field Effect Transistors / Fin Field Effect Transistors. [Doctoral Dissertation]. NSYSU; 2018. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723118-033035

University of New South Wales

3. Ullah, Abu Rifat. Phase-pure indium arsenide and p-type gallium arsenide nanowire devices.

Degree: Physics, 2018, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true

► The advent of semiconducting nanowires has initiated research in many areas. The bottom-up growth can allows access to crystal phases which are unavailable in bulk… (more)

▼ The advent of semiconducting nanowires has initiated research in many areas. The bottom-up growth can allows access to crystal phases which are unavailable in bulk materials. The large surface-volume ratio of nanowires allows better sensing of adsorbed species. The narrow diameter of nanowires provides quantum confinement and allows examination of quantum mechanical phenomena. We investigated whether changing the crystal phase of an InAs nanowire transistor channel affected the electronic characteristics of transistors and sensors. We also investigated fabrication of p-type GaAs nanowire devices to probe fundamental scientific phenomena and investigate novel switching methods.We compared MOCVD grown phase-pure wurtzite (WZ) FETs and zincblende (ZB) FETs at various temperatures T = 4-200 K and in various atmospheres. At low temperatures we found the WZ field effect mobility was 2-4 x higher than the ZB field effect mobility. Atmospheres with polar substances decreased the off current by 2-3 orders of magnitude. The WZ devices showed greater sensitivity to low levels of ionic adsorbate than ZB devices. Both the difference in low temperature mobility and the sensitivity to low levels of adsorbate is attributed to the different surface facetting on the WZ and ZB nanowires.We compared devices with three levels of Be-doping nBe at liquid helium temperatures to determine which would be most suitable for exploring quantum mechanical effects. MOSFETs using nBe = 5E18 cm-3 were the most suitable. We fabricated a three-gate device using these nanowires and found evidence of possible conductance quantization.We also tried to switch devices with highly-doped GaAs nanowires (nBe = 1.5E19 cm-3). First we etched the centre of the nanowire to access the intermediately doped section to fabricate MESFETs. We found an aqueous solution of H3PO4:H2O2 to be a good etchant, whereas sulfur-oleylamine etched vital alignment markers. These MESFETs had subthreshold swings (61 mV/dec) close to the thermal limit at room temperature. Second we used polymer electrolyte gates create a FET with a subthreshold swing of 75 mV/dec at room temperature.We also fabricated contacts on large diameter (ø > 1 micron) ZnO nanowires. We used a lifting layer to reduce the effective height of the nanowire. An insulating film formed on the ZnO nanowires during the fabrication of the lifting layer. We broke through this insulating film using an ion mill and form contacts.

Subjects/Keywords: GaAs nanowire; Phase-pure nanowire; InAs nanowire device; p-GaAs device; Wurtzite; Zincblende; Polymer electrolyte; GaAs etching; MESFET

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APA (6^th Edition):

Ullah, A. R. (2018). Phase-pure indium arsenide and p-type gallium arsenide nanowire devices. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Ullah, Abu Rifat. “Phase-pure indium arsenide and p-type gallium arsenide nanowire devices.” 2018. Doctoral Dissertation, University of New South Wales. Accessed December 06, 2019. http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Ullah, Abu Rifat. “Phase-pure indium arsenide and p-type gallium arsenide nanowire devices.” 2018. Web. 06 Dec 2019.

Vancouver:

Ullah AR. Phase-pure indium arsenide and p-type gallium arsenide nanowire devices. [Internet] [Doctoral dissertation]. University of New South Wales; 2018. [cited 2019 Dec 06]. Available from: http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true.

Council of Science Editors:

Ullah AR. Phase-pure indium arsenide and p-type gallium arsenide nanowire devices. [Doctoral Dissertation]. University of New South Wales; 2018. Available from: http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true

University of Illinois – Urbana-Champaign

4. Lin, Yiruo. Examining mean-field approximations and Bogoliubov-de Gennes (BdG) equations for topological quantum computing - some considerations on the conceptual basis of Majorana zero modes in p+ip superconductors.

Degree: PhD, Physics, 2017, University of Illinois – Urbana-Champaign

URL: http://hdl.handle.net/2142/97306

► The current theoretical framework for studying Majorana zero modes (MZM) in superconductors and its application for topological quantum computing is based on mean-field approximations and… (more)

Subjects/Keywords: Mean-field approximations; Bogoliubov-de Gennes (BdG) equations; Particle number conservation; Majorana zero modes; P+ip superconductors; Topological quantum computing

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APA (6^th Edition):

Lin, Y. (2017). Examining mean-field approximations and Bogoliubov-de Gennes (BdG) equations for topological quantum computing - some considerations on the conceptual basis of Majorana zero modes in p+ip superconductors. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/97306

Chicago Manual of Style (16^th Edition):

Lin, Yiruo. “Examining mean-field approximations and Bogoliubov-de Gennes (BdG) equations for topological quantum computing - some considerations on the conceptual basis of Majorana zero modes in p+ip superconductors.” 2017. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed December 06, 2019. http://hdl.handle.net/2142/97306.

MLA Handbook (7^th Edition):

Lin, Yiruo. “Examining mean-field approximations and Bogoliubov-de Gennes (BdG) equations for topological quantum computing - some considerations on the conceptual basis of Majorana zero modes in p+ip superconductors.” 2017. Web. 06 Dec 2019.

Vancouver:

Lin Y. Examining mean-field approximations and Bogoliubov-de Gennes (BdG) equations for topological quantum computing - some considerations on the conceptual basis of Majorana zero modes in p+ip superconductors. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2017. [cited 2019 Dec 06]. Available from: http://hdl.handle.net/2142/97306.

Council of Science Editors:

Lin Y. Examining mean-field approximations and Bogoliubov-de Gennes (BdG) equations for topological quantum computing - some considerations on the conceptual basis of Majorana zero modes in p+ip superconductors. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2017. Available from: http://hdl.handle.net/2142/97306

Texas A&M University

5. Dag, Murat. Determination of Astrophysical Direct Capture Reaction Rate for 26Si(p,γ)27P by Extracting the Asymptotic Normalization Coefficients in the Mirror Nuclear System.

Degree: PhD, Physics, 2016, Texas A&M University

URL: http://hdl.handle.net/1969.1/159094

► The ^26Si(p,γ)^27P reaction is of primary interest to this study in connection with its role in the destruction of the important astrophysical observable ^26Al. Due… (more)

Subjects/Keywords: 26Si(p,γ)27P reaction rate; ANC; Oxford Detector

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APA (6^th Edition):

Dag, M. (2016). Determination of Astrophysical Direct Capture Reaction Rate for 26Si(p,γ)27P by Extracting the Asymptotic Normalization Coefficients in the Mirror Nuclear System. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/159094

Chicago Manual of Style (16^th Edition):

Dag, Murat. “Determination of Astrophysical Direct Capture Reaction Rate for 26Si(p,γ)27P by Extracting the Asymptotic Normalization Coefficients in the Mirror Nuclear System.” 2016. Doctoral Dissertation, Texas A&M University. Accessed December 06, 2019. http://hdl.handle.net/1969.1/159094.

MLA Handbook (7^th Edition):

Dag, Murat. “Determination of Astrophysical Direct Capture Reaction Rate for 26Si(p,γ)27P by Extracting the Asymptotic Normalization Coefficients in the Mirror Nuclear System.” 2016. Web. 06 Dec 2019.

Vancouver:

Dag M. Determination of Astrophysical Direct Capture Reaction Rate for 26Si(p,γ)27P by Extracting the Asymptotic Normalization Coefficients in the Mirror Nuclear System. [Internet] [Doctoral dissertation]. Texas A&M University; 2016. [cited 2019 Dec 06]. Available from: http://hdl.handle.net/1969.1/159094.

Council of Science Editors:

Dag M. Determination of Astrophysical Direct Capture Reaction Rate for 26Si(p,γ)27P by Extracting the Asymptotic Normalization Coefficients in the Mirror Nuclear System. [Doctoral Dissertation]. Texas A&M University; 2016. Available from: http://hdl.handle.net/1969.1/159094

University of Notre Dame

6. Stephanie Lyons. 20Ne(p,g)21Na Cross Section Study with the Notre Dame 5U Accelerator</h1>.

Degree: PhD, Physics, 2016, University of Notre Dame

URL: https://curate.nd.edu/show/6h440r9883n

► In stars whose temperature is greater than 0.05 GK, hydrogen burning can proceed via the NeNa cycle, which is important for the nucleosynthesis of… (more)

Subjects/Keywords: 20Ne(p,g)21Na; 5U accelerator

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APA (6^th Edition):

Lyons, S. (2016). 20Ne(p,g)21Na Cross Section Study with the Notre Dame 5U Accelerator</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/6h440r9883n

Chicago Manual of Style (16^th Edition):

Lyons, Stephanie. “20Ne(p,g)21Na Cross Section Study with the Notre Dame 5U Accelerator</h1>.” 2016. Doctoral Dissertation, University of Notre Dame. Accessed December 06, 2019. https://curate.nd.edu/show/6h440r9883n.

MLA Handbook (7^th Edition):

Lyons, Stephanie. “20Ne(p,g)21Na Cross Section Study with the Notre Dame 5U Accelerator</h1>.” 2016. Web. 06 Dec 2019.

Vancouver:

Lyons S. 20Ne(p,g)21Na Cross Section Study with the Notre Dame 5U Accelerator</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2016. [cited 2019 Dec 06]. Available from: https://curate.nd.edu/show/6h440r9883n.

Council of Science Editors:

Lyons S. 20Ne(p,g)21Na Cross Section Study with the Notre Dame 5U Accelerator</h1>. [Doctoral Dissertation]. University of Notre Dame; 2016. Available from: https://curate.nd.edu/show/6h440r9883n

7. Khan, Shakeel. E P R studies of superconductors; -.

Degree: Physics, 2000, Aligarh Muslim University

URL: http://shodhganga.inflibnet.ac.in/handle/10603/52080

Abstract available newline newline

Summary p. 104-107

Advisors/Committee Members: Singh, S K.

Subjects/Keywords: E P R Spectrometer; Superconductors; Splitting Factor; Fine; Hyperfine

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APA (6^th Edition):

Khan, S. (2000). E P R studies of superconductors; -. (Thesis). Aligarh Muslim University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/52080

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Khan, Shakeel. “E P R studies of superconductors; -.” 2000. Thesis, Aligarh Muslim University. Accessed December 06, 2019. http://shodhganga.inflibnet.ac.in/handle/10603/52080.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Khan, Shakeel. “E P R studies of superconductors; -.” 2000. Web. 06 Dec 2019.

Vancouver:

Khan S. E P R studies of superconductors; -. [Internet] [Thesis]. Aligarh Muslim University; 2000. [cited 2019 Dec 06]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/52080.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Khan S. E P R studies of superconductors; -. [Thesis]. Aligarh Muslim University; 2000. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/52080

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

8. Lu, Fu-peng. Fabrication and Characterization of p-i-n Nanorods Structure Solar Cells.

Degree: Master, Physics, 2015, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809115-142718

► The p-i-n nanorods structure was grown on silicon (111) substrates by plasma-assisted molecular beam epitaxy. The morphology result was obtained by scanning electron microscopy including… (more)

Subjects/Keywords: nanorods; PA-MBE; p-i-n structure; nanostructure; InGaN solar cells

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APA (6^th Edition):

Lu, F. (2015). Fabrication and Characterization of p-i-n Nanorods Structure Solar Cells. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809115-142718

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Lu, Fu-peng. “Fabrication and Characterization of p-i-n Nanorods Structure Solar Cells.” 2015. Thesis, NSYSU. Accessed December 06, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809115-142718.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Lu, Fu-peng. “Fabrication and Characterization of p-i-n Nanorods Structure Solar Cells.” 2015. Web. 06 Dec 2019.

Vancouver:

Lu F. Fabrication and Characterization of p-i-n Nanorods Structure Solar Cells. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Dec 06]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809115-142718.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lu F. Fabrication and Characterization of p-i-n Nanorods Structure Solar Cells. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809115-142718

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

9. Hung, Che-wei. Study of P-I Interface Band Structures across GaAsSb/In(Al)As Tunneling Field Effect Transistors.

Degree: Master, Physics, 2015, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0525115-182356

► Recently, tunnel field-effect transistor (TFET) is one of the most promising candidates of metal-oxide-semiconductor field-effect transistors (MOSFET) because of the advantage of low operating voltage.… (more)

Subjects/Keywords: P-type/Intrinsic/N-type structure; heterointerface; tunnel field-effect transistor(TFET); electronic properties; scanning tunneling spectroscopy(STS)

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APA (6^th Edition):

Hung, C. (2015). Study of P-I Interface Band Structures across GaAsSb/In(Al)As Tunneling Field Effect Transistors. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0525115-182356

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Hung, Che-wei. “Study of P-I Interface Band Structures across GaAsSb/In(Al)As Tunneling Field Effect Transistors.” 2015. Thesis, NSYSU. Accessed December 06, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0525115-182356.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Hung, Che-wei. “Study of P-I Interface Band Structures across GaAsSb/In(Al)As Tunneling Field Effect Transistors.” 2015. Web. 06 Dec 2019.

Vancouver:

Hung C. Study of P-I Interface Band Structures across GaAsSb/In(Al)As Tunneling Field Effect Transistors. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Dec 06]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0525115-182356.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hung C. Study of P-I Interface Band Structures across GaAsSb/In(Al)As Tunneling Field Effect Transistors. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0525115-182356

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

10. Chang, Yung-Chih. Sub-nanometer scale electronic properties across P-I-N heterointerfaces of silicon solar cells under illumination.

Degree: Master, Physics, 2015, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0024115-170549

► In recent years, thin-film amorphous silicon solar cells has been widely studied because its production cost is cheaper than monocrystalline silicon solar cell. To improve… (more)

Subjects/Keywords: Amorphous silicon solar cell; Hetero-interface; P-I-N structure; Electronic properties; Sectional scanning tunneling spectroscopy; Sectional scanning tunneling microscopy

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APA (6^th Edition):

Chang, Y. (2015). Sub-nanometer scale electronic properties across P-I-N heterointerfaces of silicon solar cells under illumination. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0024115-170549

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Chang, Yung-Chih. “Sub-nanometer scale electronic properties across P-I-N heterointerfaces of silicon solar cells under illumination.” 2015. Thesis, NSYSU. Accessed December 06, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0024115-170549.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Chang, Yung-Chih. “Sub-nanometer scale electronic properties across P-I-N heterointerfaces of silicon solar cells under illumination.” 2015. Web. 06 Dec 2019.

Vancouver:

Chang Y. Sub-nanometer scale electronic properties across P-I-N heterointerfaces of silicon solar cells under illumination. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Dec 06]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0024115-170549.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang Y. Sub-nanometer scale electronic properties across P-I-N heterointerfaces of silicon solar cells under illumination. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0024115-170549

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

11. Hugon, Justin L. A Search for the Standard Model Higgs Boson Decaying to Muons in LHC Data with the CMS Experiment.

Degree: PhD, Physics, 2015, University of Florida

URL: http://ufdc.ufl.edu/UFE0049223

After the discovery of a 125 GeV Higgs boson with standard Advisors/Committee Members: ACOSTA,DARIN E (committee chair), FURIC,IVAN KRESIMIR (committee member), KONIGSBERG,JACOBO (committee member), LAM,HERMAN (committee member).

Subjects/Keywords: Bosons; Electrons; Higgs boson; Luminosity; Momentum; Muons; P values; Photons; Physics; Simulations; boson – cms – higgs – lepton – lhc – muon

…LIST OF FIGURES Figure p”ge 2-1 The sh”pe of the potenti”l energy term introduced in… …1 The p”rticle ”cceler”tor complex of CERN. . . . . . . . . . . . . . . . . . . . . 35 3-2… …88 5-5 A histogr”m of the p / in the 8 TeV d”t”set comp”red to the simul”tion. . . . . 89 T… …8 TeV d”t” for four of the c”tegories. . . . . . . . . . . . . 104 5-15 Hypothesis test p… …Florid” in P”rti”l Ful llment of the Requirements for the Degree of Doctor of Philosophy A…

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APA (6^th Edition):

Hugon, J. L. (2015). A Search for the Standard Model Higgs Boson Decaying to Muons in LHC Data with the CMS Experiment. (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0049223

Chicago Manual of Style (16^th Edition):

Hugon, Justin L. “A Search for the Standard Model Higgs Boson Decaying to Muons in LHC Data with the CMS Experiment.” 2015. Doctoral Dissertation, University of Florida. Accessed December 06, 2019. http://ufdc.ufl.edu/UFE0049223.

MLA Handbook (7^th Edition):

Hugon, Justin L. “A Search for the Standard Model Higgs Boson Decaying to Muons in LHC Data with the CMS Experiment.” 2015. Web. 06 Dec 2019.

Vancouver:

Hugon JL. A Search for the Standard Model Higgs Boson Decaying to Muons in LHC Data with the CMS Experiment. [Internet] [Doctoral dissertation]. University of Florida; 2015. [cited 2019 Dec 06]. Available from: http://ufdc.ufl.edu/UFE0049223.

Council of Science Editors:

Hugon JL. A Search for the Standard Model Higgs Boson Decaying to Muons in LHC Data with the CMS Experiment. [Doctoral Dissertation]. University of Florida; 2015. Available from: http://ufdc.ufl.edu/UFE0049223

12. Rao, C Nageswara. Image analysis and hydrogen bond studies in p n alkyl oxy benzoic acids; Image analysis and hydrogen bond studies in p-n-alkyl(oxy) benzoic acids.

Degree: Physics, 2013, Acharya Nagarjuna University

URL: http://shodhganga.inflibnet.ac.in/handle/10603/31051

None

References given in chapters

Advisors/Committee Members: Sastry, S Sreehari.

Subjects/Keywords: Anisotropic; Image Analysis; Liquid Crystals; p-n-Alkyl (oxy) Benzoic Acid

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APA (6^th Edition):

Rao, C. N. (2013). Image analysis and hydrogen bond studies in p n alkyl oxy benzoic acids; Image analysis and hydrogen bond studies in p-n-alkyl(oxy) benzoic acids. (Thesis). Acharya Nagarjuna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/31051

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Rao, C Nageswara. “Image analysis and hydrogen bond studies in p n alkyl oxy benzoic acids; Image analysis and hydrogen bond studies in p-n-alkyl(oxy) benzoic acids.” 2013. Thesis, Acharya Nagarjuna University. Accessed December 06, 2019. http://shodhganga.inflibnet.ac.in/handle/10603/31051.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Rao, C Nageswara. “Image analysis and hydrogen bond studies in p n alkyl oxy benzoic acids; Image analysis and hydrogen bond studies in p-n-alkyl(oxy) benzoic acids.” 2013. Web. 06 Dec 2019.

Vancouver:

Rao CN. Image analysis and hydrogen bond studies in p n alkyl oxy benzoic acids; Image analysis and hydrogen bond studies in p-n-alkyl(oxy) benzoic acids. [Internet] [Thesis]. Acharya Nagarjuna University; 2013. [cited 2019 Dec 06]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/31051.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rao CN. Image analysis and hydrogen bond studies in p n alkyl oxy benzoic acids; Image analysis and hydrogen bond studies in p-n-alkyl(oxy) benzoic acids. [Thesis]. Acharya Nagarjuna University; 2013. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/31051

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

13. Bono, Jason S. First Time Measurements of Polarization Observables for the Charged Cascade Hyperon in Photoproduction.

Degree: PhD, Physics, 2014, Florida International University

URL: http://digitalcommons.fiu.edu/etd/1520 ; 10.25148/etd.FI14071130 ; FI14071130

► The parity violating weak decay of hyperons offers a valuable means of measuring their polarization, providing insight into the production of strange quarks and… (more)

▼ The parity violating weak decay of hyperons offers a valuable means of measuring their polarization, providing insight into the production of strange quarks and the matter they compose. Jefferson Lab’s CLAS collaboration has utilized this property of hyperons, publishing the most precise polarization measurements for the Λ and Σ in both photoproduction and electroproduction to date. In contrast, cascades, which contain two strange quarks, can only be produced through indirect processes and as a result, exhibit low cross sections thus remaining experimentally elusive. At present, there are two aspects in cascade physics where progress has been minimal: characterizing their production mechanism, which lacks theoretical and experimental developments, and observation of the numerous excited cascade resonances that are required to exist by flavor SU(3)F symmetry. However, CLAS data were collected in 2008 with a luminosity of 68 pb−1 using a circularly polarized photon beam with energies up to 5.45 GeV, incident on a liquid hydrogen target. This dataset is, at present, the world’s largest for meson photoproduction in its energy range and provides a unique opportunity to study cascade physics with polarization measurements. The current analysis explores hyperon production through the γp → K+K+Ξ− reaction by providing the first ever determination of spin observables P, Cx and Cz for the cascade. Three of our primary goals are to test the only cascade photoproduction model in existence, examine the underlying processes that give rise to hyperon polarization, and to stimulate future theoretical developments while providing constraints for their parameters. Our research is part of a broader program to understand the production of strange quarks and hadrons with strangeness. The remainder of this document discusses the motivation behind such research, the method of data collection, details of their analysis, and the significance of our results. Advisors/Committee Members: Lei Guo, Brian Raue, Misak Sargsian, Cem Karayalcin.

Subjects/Keywords: Physics; Weak; Nuclear; Polarization; Hyperon; Particle; Baryon; Meson; Strange; Quark; Kaon; Photoproduction; Jlab; Jefferson; Lab; Photon; Lambda; Production; Gamma; K; P; Xi; Cascade; Jason; Bono; Experimental; Accelerator; g12; CLAS; Jason Bono; Jason S. Bono; Nuclear Physics; Particle Physics; Hyperon Polarization; Weak Decay; Cascade Polarization; Xi Polarization; Induced; Transfered; Cx; Cz; Induced Polarization; Transfered Polarization; FIU; Jlab; Jefferson Lab; Thomas Jefferson National Accelerator Facility; Hall b

…by providing the first ever determination of spin observables P , Cx and Cz for the cascade… …3.4 Calculation of P . . . . . . . . . . . . . . . . . . . . . . . 3.5 Calculation of Double… …Calculation of Acceptance and Uncertainty . . . . . 6 Results 6.1 Induced Polarization P… …Acceptance for P . . . . . . . . . . . . . . . . Study of Non-Cancellation of Acceptance for Cx and… …Cz . . . . . Effect of Method for P : A Cross Check . . . . . . . . . . . . . . . 7.7.1…

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APA (6^th Edition):

Bono, J. S. (2014). First Time Measurements of Polarization Observables for the Charged Cascade Hyperon in Photoproduction. (Doctoral Dissertation). Florida International University. Retrieved from http://digitalcommons.fiu.edu/etd/1520 ; 10.25148/etd.FI14071130 ; FI14071130

Chicago Manual of Style (16^th Edition):

Bono, Jason S. “First Time Measurements of Polarization Observables for the Charged Cascade Hyperon in Photoproduction.” 2014. Doctoral Dissertation, Florida International University. Accessed December 06, 2019. http://digitalcommons.fiu.edu/etd/1520 ; 10.25148/etd.FI14071130 ; FI14071130.

MLA Handbook (7^th Edition):

Bono, Jason S. “First Time Measurements of Polarization Observables for the Charged Cascade Hyperon in Photoproduction.” 2014. Web. 06 Dec 2019.

Vancouver:

Bono JS. First Time Measurements of Polarization Observables for the Charged Cascade Hyperon in Photoproduction. [Internet] [Doctoral dissertation]. Florida International University; 2014. [cited 2019 Dec 06]. Available from: http://digitalcommons.fiu.edu/etd/1520 ; 10.25148/etd.FI14071130 ; FI14071130.

Council of Science Editors:

Bono JS. First Time Measurements of Polarization Observables for the Charged Cascade Hyperon in Photoproduction. [Doctoral Dissertation]. Florida International University; 2014. Available from: http://digitalcommons.fiu.edu/etd/1520 ; 10.25148/etd.FI14071130 ; FI14071130

14. Sanal, K C. Development of p-type transparent semiconducting oxides for thin film transistor applications.

Degree: Physics, 2014, Cochin University of Science and Technology

URL: http://dyuthi.cusat.ac.in/purl/3991

► <p>Semiconductor physics has developed significantly in the field of re- search and industry in the past few decades due to it’s numerous practical applications. One… (more)

Subjects/Keywords: transparent conducting oxides; Amorphous semiconductors; p-Type transparent oxide semiconductors; thin film transistors; transparent p-SnO/n-ZnO pn heterojunction

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APA (6^th Edition):

Sanal, K. C. (2014). Development of p-type transparent semiconducting oxides for thin film transistor applications. (Thesis). Cochin University of Science and Technology. Retrieved from http://dyuthi.cusat.ac.in/purl/3991

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Sanal, K C. “Development of p-type transparent semiconducting oxides for thin film transistor applications.” 2014. Thesis, Cochin University of Science and Technology. Accessed December 06, 2019. http://dyuthi.cusat.ac.in/purl/3991.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Sanal, K C. “Development of p-type transparent semiconducting oxides for thin film transistor applications.” 2014. Web. 06 Dec 2019.

Vancouver:

Sanal KC. Development of p-type transparent semiconducting oxides for thin film transistor applications. [Internet] [Thesis]. Cochin University of Science and Technology; 2014. [cited 2019 Dec 06]. Available from: http://dyuthi.cusat.ac.in/purl/3991.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sanal KC. Development of p-type transparent semiconducting oxides for thin film transistor applications. [Thesis]. Cochin University of Science and Technology; 2014. Available from: http://dyuthi.cusat.ac.in/purl/3991

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

15. Rajeshmon, V G. Prospects of sprayed CZTS thin film solar cells from the perspective of material characterization and device performance.

Degree: Physics, 2013, Cochin University of Science and Technology

URL: http://dyuthi.cusat.ac.in/purl/3535

► <p>This thesis is devoted to the development of a relatively new, rapidly developing quaternary semiconducting material (viz., Cu2ZnSnS4) used for photovoltaic applications. This semiconductor, commonly… (more)

Subjects/Keywords: Energy economy; CZTS thin films; Solar radiation; p-n junctions; Diode parameters; Substrate temperature

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APA (6^th Edition):

Rajeshmon, V. G. (2013). Prospects of sprayed CZTS thin film solar cells from the perspective of material characterization and device performance. (Thesis). Cochin University of Science and Technology. Retrieved from http://dyuthi.cusat.ac.in/purl/3535

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Rajeshmon, V G. “Prospects of sprayed CZTS thin film solar cells from the perspective of material characterization and device performance.” 2013. Thesis, Cochin University of Science and Technology. Accessed December 06, 2019. http://dyuthi.cusat.ac.in/purl/3535.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Rajeshmon, V G. “Prospects of sprayed CZTS thin film solar cells from the perspective of material characterization and device performance.” 2013. Web. 06 Dec 2019.

Vancouver:

Rajeshmon VG. Prospects of sprayed CZTS thin film solar cells from the perspective of material characterization and device performance. [Internet] [Thesis]. Cochin University of Science and Technology; 2013. [cited 2019 Dec 06]. Available from: http://dyuthi.cusat.ac.in/purl/3535.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rajeshmon VG. Prospects of sprayed CZTS thin film solar cells from the perspective of material characterization and device performance. [Thesis]. Cochin University of Science and Technology; 2013. Available from: http://dyuthi.cusat.ac.in/purl/3535

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

16. Liao, Kuo-han. Study of Sputtered P-N Homojunction Diodes of Polar n-Type on Nonpolar p-Type ZnO Thin Films.

Degree: Master, Physics, 2013, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809113-145639

► This thesis investigates thin-film P-N homojunction diodes made of c-textured ZnO deposited on a-oriented ZnO (a-ZnO) using r-Al2O3 as substrates. First, an a-ZnO epitaxial layer… (more)

Subjects/Keywords: P-N diode; ZnO; Al2O3; sputtering; HF

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APA (6^th Edition):

Liao, K. (2013). Study of Sputtered P-N Homojunction Diodes of Polar n-Type on Nonpolar p-Type ZnO Thin Films. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809113-145639

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Liao, Kuo-han. “Study of Sputtered P-N Homojunction Diodes of Polar n-Type on Nonpolar p-Type ZnO Thin Films.” 2013. Thesis, NSYSU. Accessed December 06, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809113-145639.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Liao, Kuo-han. “Study of Sputtered P-N Homojunction Diodes of Polar n-Type on Nonpolar p-Type ZnO Thin Films.” 2013. Web. 06 Dec 2019.

Vancouver:

Liao K. Study of Sputtered P-N Homojunction Diodes of Polar n-Type on Nonpolar p-Type ZnO Thin Films. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Dec 06]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809113-145639.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liao K. Study of Sputtered P-N Homojunction Diodes of Polar n-Type on Nonpolar p-Type ZnO Thin Films. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809113-145639

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

17. Shen, Jhih-Sheng. The electric properties of m-plane ZnO grown by ALD.

Degree: Master, Physics, 2013, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0218113-092139

► Wurtzite ZnO exhibits along its c-axis a spontaneous polarization that leads to Quantum-Confined Stark Effect (QCSE) which would then reduce the light-emitting efficiency when formed… (more)

Subjects/Keywords: m-plane ZnO; magnetoresistance; Hall effect; p-type semiconductor; ALD

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APA (6^th Edition):

Shen, J. (2013). The electric properties of m-plane ZnO grown by ALD. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0218113-092139

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Shen, Jhih-Sheng. “The electric properties of m-plane ZnO grown by ALD.” 2013. Thesis, NSYSU. Accessed December 06, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0218113-092139.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Shen, Jhih-Sheng. “The electric properties of m-plane ZnO grown by ALD.” 2013. Web. 06 Dec 2019.

Vancouver:

Shen J. The electric properties of m-plane ZnO grown by ALD. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Dec 06]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0218113-092139.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Shen J. The electric properties of m-plane ZnO grown by ALD. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0218113-092139

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Colorado

18. Zhang, Yanbao. Analysis of Tests of Local Realism.

Degree: PhD, Physics, 2013, University of Colorado

URL: http://scholar.colorado.edu/phys_gradetds/95

► Reliable and loophole-free demonstrations of the violation of local realism (LR) are highly desirable not only for understanding the foundation of quantum mechanics but… (more)

▼ Reliable and loophole-free demonstrations of the violation of local realism (LR) are highly desirable not only for understanding the foundation of quantum mechanics but also for facilitating quantum information processing, such as quantum key distribution and randomness expansion. To date, LR has been experimentally violated, but with loopholes, by testing predetermined Bell inequalities. This thesis presents a framework for verifying and quantifying the violation of LR without relying on a particular Bell inequality. First, the experimental resources, such as the quantum state, measurement settings, detection effciency, and visibility required for a violation of LR, are studied via a measure called the statistical strength. The higher the statistical strength, the more confidence in a violation of LR one has after a suffciently large number of experimental data. Particularly, we study the minimum detection effciency required to achieve any given statistical strength level in tests of LR with entangled states created from two independent polarized photons passing through a polarizing beam splitter. It is shown that, compared with photon detectors, photon counters make violations of LR easier to detect for any nonzero probability of multiple photons in an output beam of the polarizing beam splitter. Second, to quantify the statistical evidence against LR obtained from a finite number of experimental data, one can choose a test statistic, such as a Bell-inequality violation, to measure the amount of violation of LR. It is desirable to bound the probability, according to LR, of obtaining a test statistic at least as extreme as that observed. This probability is known as a p-value for the hypothesis test of LR. We propose a protocol to bound such a p-value. The bound provided is asymptotically tight, if the prepared quantum state and measurement settings are stable during an experiment. Therefore, the proposed protocol is asymptotically optimal, and the bound provided is a standardized measure of success for experimental tests of LR. One can quantitatively compare different experimental tests based on this bound. Moreover, the bound provided is valid even if the quantum state varies arbitrarily and local realistic models depend on previous measurement settings and outcomes. Hence, this bound facilitates device-independent and nonlocality-based quantum information processing. For comparison, bounds of p-values derived from Bell-inequality violations using the number of standard deviations of violation of a Bell inequality or using martingale theory are studied. It is found that putative bounds derived from the number of standard deviations of violation are not valid and bounds from martingale theory are not tight. Finally, a simplified and effcient data analysis protocol using a set of Bell inequalities is proposed and compared with the above optimal and martingale-based protocols. The simplified protocol provides as good as and typically tighter p-value bounds than the martingale-based protocol,… Advisors/Committee Members: Emanuel Knill, Sae Woo Nam, Vanja Dukic, Murray Holland, Michael Hermele.

Subjects/Keywords: Bell inequality; Bell test; Local realism; p-value; Statistical strength; Other Physics; Physics; Quantum Physics

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APA (6^th Edition):

Zhang, Y. (2013). Analysis of Tests of Local Realism. (Doctoral Dissertation). University of Colorado. Retrieved from http://scholar.colorado.edu/phys_gradetds/95

Chicago Manual of Style (16^th Edition):

Zhang, Yanbao. “Analysis of Tests of Local Realism.” 2013. Doctoral Dissertation, University of Colorado. Accessed December 06, 2019. http://scholar.colorado.edu/phys_gradetds/95.

MLA Handbook (7^th Edition):

Zhang, Yanbao. “Analysis of Tests of Local Realism.” 2013. Web. 06 Dec 2019.

Vancouver:

Zhang Y. Analysis of Tests of Local Realism. [Internet] [Doctoral dissertation]. University of Colorado; 2013. [cited 2019 Dec 06]. Available from: http://scholar.colorado.edu/phys_gradetds/95.

Council of Science Editors:

Zhang Y. Analysis of Tests of Local Realism. [Doctoral Dissertation]. University of Colorado; 2013. Available from: http://scholar.colorado.edu/phys_gradetds/95

Penn State University

19. Ying, Yiqun Alex. Probing the Enhanced Superconductivity and Chiral Edge Current in Spin-triplet Superconductor Sr2RuO4.

Degree: PhD, Physics, 2012, Penn State University

URL: https://etda.libraries.psu.edu/catalog/16138

► This dissertation aims at providing insight into the mechanism of spin-triplet superconductivity in Sr2RuO4, the only Cu-free layered perovskite material found to be superconducting. The… (more)

Subjects/Keywords: Sr2RuO4; spin-triplet superconductivity; chiral p-wave; proximity effect; dislocation; Josephson interferometer; chiral edge current

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APA (6^th Edition):

Ying, Y. A. (2012). Probing the Enhanced Superconductivity and Chiral Edge Current in Spin-triplet Superconductor Sr2RuO4. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/16138

Chicago Manual of Style (16^th Edition):

Ying, Yiqun Alex. “Probing the Enhanced Superconductivity and Chiral Edge Current in Spin-triplet Superconductor Sr2RuO4.” 2012. Doctoral Dissertation, Penn State University. Accessed December 06, 2019. https://etda.libraries.psu.edu/catalog/16138.

MLA Handbook (7^th Edition):

Ying, Yiqun Alex. “Probing the Enhanced Superconductivity and Chiral Edge Current in Spin-triplet Superconductor Sr2RuO4.” 2012. Web. 06 Dec 2019.

Vancouver:

Ying YA. Probing the Enhanced Superconductivity and Chiral Edge Current in Spin-triplet Superconductor Sr2RuO4. [Internet] [Doctoral dissertation]. Penn State University; 2012. [cited 2019 Dec 06]. Available from: https://etda.libraries.psu.edu/catalog/16138.

Council of Science Editors:

Ying YA. Probing the Enhanced Superconductivity and Chiral Edge Current in Spin-triplet Superconductor Sr2RuO4. [Doctoral Dissertation]. Penn State University; 2012. Available from: https://etda.libraries.psu.edu/catalog/16138

NSYSU

20. Huang, Guo-Sin. All-ZnO P-N Diodes Fabricated by Variations of Orientation.

Degree: Master, Physics, 2012, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0910112-164043

► This thesis investigates the effects of varying the crystallographic orientations of epitaxial ZnO thin films to produce functional ZnO P-N diodes. First, with the atomic… (more)

Subjects/Keywords: P-N diode; RF-sputter; ALD; Al2O3; ZnO

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APA (6^th Edition):

Huang, G. (2012). All-ZnO P-N Diodes Fabricated by Variations of Orientation. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0910112-164043

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Huang, Guo-Sin. “All-ZnO P-N Diodes Fabricated by Variations of Orientation.” 2012. Thesis, NSYSU. Accessed December 06, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0910112-164043.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Huang, Guo-Sin. “All-ZnO P-N Diodes Fabricated by Variations of Orientation.” 2012. Web. 06 Dec 2019.

Vancouver:

Huang G. All-ZnO P-N Diodes Fabricated by Variations of Orientation. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 Dec 06]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0910112-164043.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang G. All-ZnO P-N Diodes Fabricated by Variations of Orientation. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0910112-164043

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Moehlmann, Benjamin James. Spin transport in strained non-magnetic zinc blende semiconductors.

Degree: PhD, Physics, 2012, University of Iowa

URL: https://ir.uiowa.edu/etd/3353

► The problem of spin manipulation via the spin-orbit interaction in nonmagnetic semiconductors in the absence of magnetic fields is investigated in this work. We… (more)

▼ The problem of spin manipulation via the spin-orbit interaction in nonmagnetic semiconductors in the absence of magnetic fields is investigated in this work. We begin with a review of the literature on spin dynamics in semiconductors, then discuss the semi-empirical k ⋅ p method of calculating direct-gap semiconductor properties, which we use to estimate material parameters significant for manipulation of spin even in the absence of a magnetic field. The total effective magnetic fields and precession lengths are calculated for a variety of quantum well orientations, and a class of devices are proposed that will allow for all-electric arbitrary manipulation of spin orientations. The strain- and momentum-dependent spin splitting coefficient C3 has been calculated using a fourteen band Kane k⋅p model for a variety of III-V semiconductors as well as ZnSe and CdSe. It is observed that the spin-splitting parameters C3 and γ, corresponding to the strain-induced spin-orbit interaction and Dresselhaus coefficient, are sensitive to the value of the inter-band spin-orbit coupling Δ− between the p valence and p̄ second conduction band in all cases. The value of Δ− has therefore been recalculated in these materials using a tight-binding model and modern experimental values of the valence and second conduction band spin-orbit splittings. The total effective magnetic field and precession length of spins in strained quantum wells in the (001), (110), and (111) planes are derived with consideration for all known effective magnetic fields except those due to interface effects in non- common-atom heterostructures (native inversion asymmetry). The orientation of the k-linear Dresselhaus field and the strain-dependent fields vary strongly with the growth axis of the quantum well. The precession length in the (110) and (001) cases can achieve infinite anisotropy, while the precession length of (111) quantum wells is always isotropic. We find that the electronic spin rotation induced by drift transport around a closed path in a wide variety of nonmagnetic semiconductors at zero magnetic field depends solely on the physical path taken. Physical paths that produce any possible spin rotation due to transport around a closed path are constructed for electrons experiencing strain or electric fields in (001), (110), or (111)-grown zinc blende semiconductor quantum wells. Spin decoherence due to travel along the path is negligible compared to the background spin decoherence rate. The small size of the designed paths (< 100 nm scale in GaAs) may lead to applications in nanoscale spintronic circuits. Advisors/Committee Members: Flatté, Michael E. (supervisor).

Subjects/Keywords: deformation; electronic structure; k dot p theory; spin-orbit coupling; Spintronics; strain; Physics

…45 46 47 50 50 53 55 55 56 58 59 3.5 3.6 Application to k · p theory: Calculating the… …crystal. We summarize the fourteen band k · p theory calculations in Chapter 3. We discussed the… …the momentum of the electron satisfies p = me v, we can write the Hamiltonian for the… …electron spin in its rest frame as (∇V(x) × p) · σ 4c2 m2e gµB = Beff · σ 2…

10 more images…

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APA (6^th Edition):

Moehlmann, B. J. (2012). Spin transport in strained non-magnetic zinc blende semiconductors. (Doctoral Dissertation). University of Iowa. Retrieved from https://ir.uiowa.edu/etd/3353

Chicago Manual of Style (16^th Edition):

Moehlmann, Benjamin James. “Spin transport in strained non-magnetic zinc blende semiconductors.” 2012. Doctoral Dissertation, University of Iowa. Accessed December 06, 2019. https://ir.uiowa.edu/etd/3353.

MLA Handbook (7^th Edition):

Moehlmann, Benjamin James. “Spin transport in strained non-magnetic zinc blende semiconductors.” 2012. Web. 06 Dec 2019.

Vancouver:

Moehlmann BJ. Spin transport in strained non-magnetic zinc blende semiconductors. [Internet] [Doctoral dissertation]. University of Iowa; 2012. [cited 2019 Dec 06]. Available from: https://ir.uiowa.edu/etd/3353.

Council of Science Editors:

Moehlmann BJ. Spin transport in strained non-magnetic zinc blende semiconductors. [Doctoral Dissertation]. University of Iowa; 2012. Available from: https://ir.uiowa.edu/etd/3353

NSYSU

22. Kao, Hsiu-Fen. Spin-Splitting Calculation for Zinc-blende and Wurtzite Structures of III-V Semiconductors.

Degree: PhD, Physics, 2012, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-003839

► In this study, the spin-splitting energy of the lowest conduction bands in bulk zincblende and wurtzite structures of III-V semiconductors had been investigated by the… (more)

▼ In this study, the spin-splitting energy of the lowest conduction bands in bulk zincblende and wurtzite structures of III-V semiconductors had been investigated by the linear combination of atomic orbital (LCAO) method, the atomic bond-orbital model (ABOM), and the two-band kï¼p (2KP) model. Spin-splitting calculation for zincblende structures: We develop a 16-band atomic bond-orbital model (ABOM) to compute the spin splitting induced by bulk inversion asymmetry in zincblende materials. This model is derived from the linear combination of atomic orbital (LCAO) scheme such that the characteristics of the real atomic orbitals can be preserved to calculate the spin splitting. The Hamiltonian of 16-band center-zone ABOM (CZABOM) is based on a similarity transformation performed on the nearest-neighbor LCAO Hamiltonian with a second-order Taylor expansion over k at the Î point. The spin-splitting energies in bulk zincblende semiconductors, GaAs and InSb, are calculated, and the results agree with the LCAO and first-principles calculations. However, we find that the spin-orbit coupling between bonding and antibonding p-like states, evaluated by the 16CZABOM, dominates the spin splitting of the lowest conduction bands in the zincblende materials. Spin-splitting calculation for wurtzite structures: The spin-splitting energies in biaxially strained bulk wurtzite material AlN are calculated using the linear combination of atomic orbital (LCAO) method, and the equi-spin-splitting distributions in k-space near the minimum-spin-splitting (MSS) surfaces are illustrated. These data are compared with those derived analytically by two-band kï¼p (2KP) model. It is found that the results from these two methods are in good agreement for small k. However, the ellipsoidal MSS surface under biaxial compressive strain does not exist in the 2KP model, because the data points are far from the Î point. Instead, three basic shapes of the MSS surface occur in the wurtzite Brillouin zone: a hyperboloid of two sheets, a hexagonal cone, and a hyperboloid of one sheet, evaluated from the LCAO method across the range of biaxial strains from compressive to tensile. The shapes of the equi-spin-splitting (ESS) surfaces near these MSS surfaces have also three types: a hyperboloid of one sheet, an approximate, asymmetric hyperboloid surface, and an opposing hyperboloid of one sheet. Advisors/Committee Members: Chun-Nan Chen (chair), Wang-Chuang Kuo (chair), Ikai Lo (committee member), De-Hone Lin (chair), Yan-Ten Lu (chair).

Subjects/Keywords: two-band kï¼p (2KP); Spin splitting; zincblende; linear combination of atomic orbital (LCAO); atomic bond-orbital model (ABOM); wurtzite; minimum-spin-splitting (MSS) surface; equi-spin-splitting (ESS) surface

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APA (6^th Edition):

Kao, H. (2012). Spin-Splitting Calculation for Zinc-blende and Wurtzite Structures of III-V Semiconductors. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-003839

Chicago Manual of Style (16^th Edition):

Kao, Hsiu-Fen. “Spin-Splitting Calculation for Zinc-blende and Wurtzite Structures of III-V Semiconductors.” 2012. Doctoral Dissertation, NSYSU. Accessed December 06, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-003839.

MLA Handbook (7^th Edition):

Kao, Hsiu-Fen. “Spin-Splitting Calculation for Zinc-blende and Wurtzite Structures of III-V Semiconductors.” 2012. Web. 06 Dec 2019.

Vancouver:

Kao H. Spin-Splitting Calculation for Zinc-blende and Wurtzite Structures of III-V Semiconductors. [Internet] [Doctoral dissertation]. NSYSU; 2012. [cited 2019 Dec 06]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-003839.

Council of Science Editors:

Kao H. Spin-Splitting Calculation for Zinc-blende and Wurtzite Structures of III-V Semiconductors. [Doctoral Dissertation]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0629112-003839

Punjabi University

23. Sharma, Neelesh. P-Wave meson emitting decays of heavy flavor hadrons.

Degree: Physics, 2011, Punjabi University

URL: http://shodhganga.inflibnet.ac.in/handle/10603/2882

► <p>At present, there exist rich amount of experimental data for the weak decays of heavy flavor hadrons. Weak leptonic and semileptonic decays are reasonably well… (more)

▼ <p>At present, there exist rich amount of experimental data for the weak decays of heavy flavor hadrons. Weak leptonic and semileptonic decays are reasonably well understood in the Standard Model of fundamental interactions, however, weak hadronic decays have posed serious problems for the model as these decays experience strong interaction interference due to the gluons exchange among the quarks involved. In this thesis, two-body weak hadronic decays of heavy flavor mesons have investigated in the framework of the Standard Model. It has been found experimentally that two-body decays dominate the decay spectrum. Theoretical focus has, so far, been on the s-wave meson (i.e. pseudoscalar (P) and vector mesons (V)) emitting weak decays. However, charm and bottom mesons, being heavy, can also emit p-wave mesons, i.e. axial-vector (A), tensor (T) and scalar (S) mesons. Naively, the p-wave mesons emitting decays of the hadrons are expected to be suppressed kinematically due to the large mass of these meson resonances. However, now reasonable amount of experimental data has become available for branching ratios of the p-wave emitting decays of heavy flavor mesons which are found to be quite large, and require theoretical understanding. In this thesis, such weak decays of bottom mesons ( −B , 0 B and s B ), which are the bound state of bottom quark and a light anti- quark, and of a unique bottom-charm ( c B ) meson made up of heavy quarks only, have been investigated using the improved ISGW –II (Isgur, Scora, Grinstein and Wise) quark model. It has been the first model to calculate the form factors for s-wave meson to p-wave meson transitions using the constituent quark picture. Firstly, form factors for s-wave meson to p-wave meson transitions have been determined in this thesis using this model. Finally, branching ratios of weak hadronic decays involving b c and b u transitions are predicted that are found to be in good agreement with the available experimental data for bottom mesons ( −B , 0 B and s B ). Since c B meson is recently observed, and measurements for its weak decays are expected in future experiments, it is hoped that the predictions made in this thesis would help the experimentalists to identify the p-wave meson emitting decays of the heaviest bottom meson. p><p>Summary and conclusions p. 178-182, Appendixp> Advisors/Committee Members: Verma, R C.

Subjects/Keywords: Physics; Heavy flavor hadrons; P Wave

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APA (6^th Edition):

Sharma, N. (2011). P-Wave meson emitting decays of heavy flavor hadrons. (Thesis). Punjabi University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/2882

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Sharma, Neelesh. “P-Wave meson emitting decays of heavy flavor hadrons.” 2011. Thesis, Punjabi University. Accessed December 06, 2019. http://shodhganga.inflibnet.ac.in/handle/10603/2882.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Sharma, Neelesh. “P-Wave meson emitting decays of heavy flavor hadrons.” 2011. Web. 06 Dec 2019.

Vancouver:

Sharma N. P-Wave meson emitting decays of heavy flavor hadrons. [Internet] [Thesis]. Punjabi University; 2011. [cited 2019 Dec 06]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/2882.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sharma N. P-Wave meson emitting decays of heavy flavor hadrons. [Thesis]. Punjabi University; 2011. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/2882

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

24. Vanaja, K A. Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications.

Degree: Physics, 2011, Cochin University of Science and Technology

URL: http://dyuthi.cusat.ac.in/purl/2773

► <p>In the present studies, various copper delafossite materials viz; CuAlO2, CuGaO2, CuFeO2 , CuGa1-xFexO2, CuYO2 and CuCaxY1-xO2 were synthesised by solid state reaction technique. These… (more)

▼ <p>In the present studies, various copper delafossite materials viz; CuAlO2, CuGaO2, CuFeO2 , CuGa1-xFexO2, CuYO2 and CuCaxY1-xO2 were synthesised by solid state reaction technique. These copper delafossite materials were grown in thin film form by rf magnetron sputtering technique. In general copper delafossites exhibit good optical transparency. The conductivity of the CuYO2 could be improved by Ca doping or by oxygen intercalation by annealing the film in oxygen atmosphere. It has so far been impossible to improve the p-type conductivity of CuGaO2 significantly by doping Mg or Ca on the Ga site. The ptype conductivity is presumed to be due to oxygen doping or Cu Vacancies [6]. Reports in literature show, oxygen intercalation or divalent ion doping on Ga site is not possible for CuGaO2 thin films to improve the p-type conductivity. Sintered powder and crystals of CuFeO2 have been reported as the materials having the highest p-type conductivity [14, 15] among the copper and silver delafossites. However the CuFeO2 films are found to be less transparent in the visible region compared to CuGaO2. Hence in the present work, the solid solution between the CuGaO2 and CuFeO2 was effected by solid state reaction, varying the Fe content. The CuGa1-xFexO2 with Fe content, x=0.5 shows an increase in conductivity by two orders, compared to CuGaO2 but the transparency is only about 50% in the visible region which is less than that of CuGaO2 The synthesis of α−AgGaO2 was carried out by two step process which involves the synthesis of β-AgGaO2 by ion exchange reaction followed by the hydrothermal conversion of the β-AgGaO2 into α-AgGaO2. The trace amount of Ag has been reduced substantially in the two step synthesis compared to the direct hydrothermal synthesis. Thin films of α-AgGaO2 were prepared on silicon and Al2O3 substrates by pulsed laser deposition. These studies indicate the possibility of using this material as p-type material in thin film form for transparent electronics. The room temperature conductivity of α-AgGaO2 was measured as 3.17 x 10-4 Scm-1and the optical band gap was estimated as 4.12 eV. A transparent p-n junction thin film diode on glass substrate was fabricated using p-type α-AgGaO2 and n-ZnO.AgCoO2 thin films with 50% transparency in the visible region were deposited on single crystalline Al2O3 and amorphous silica substrates by RF magnetron sputtering and p type conductivity of AgCoO2 was demonstrated by fabricating transparent p-n junction diode with AgCoO2 as p-side and ZnO: Al as n-side using sputtering. The junction thus obtained was found to be rectifying with a forward to reverse current of about 10 at an applied voltage of 3 V.The present study shows that silver delafossite thin films with p-type conductivity can be used for the fabrication of active devices for transparent electronics applications. p><p>p>

Subjects/Keywords: Transparent conducting oxides; copper delafossites; p-type conductivity; thin films; AgGaO2; pulsed laser deposition; heterojunction; material science; Physics

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APA (6^th Edition):

Vanaja, K. A. (2011). Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications. (Thesis). Cochin University of Science and Technology. Retrieved from http://dyuthi.cusat.ac.in/purl/2773

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Vanaja, K A. “Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications.” 2011. Thesis, Cochin University of Science and Technology. Accessed December 06, 2019. http://dyuthi.cusat.ac.in/purl/2773.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Vanaja, K A. “Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications.” 2011. Web. 06 Dec 2019.

Vancouver:

Vanaja KA. Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications. [Internet] [Thesis]. Cochin University of Science and Technology; 2011. [cited 2019 Dec 06]. Available from: http://dyuthi.cusat.ac.in/purl/2773.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vanaja KA. Growth and characterisation of p-type delafossite transparent conducting thin films for heterojunction applications. [Thesis]. Cochin University of Science and Technology; 2011. Available from: http://dyuthi.cusat.ac.in/purl/2773

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Notre Dame

25. Shawn Patrick O'Brien. Exploring the αp-process with high precision (p,t) reactions</h1>.

Degree: PhD, Physics, 2010, University of Notre Dame

URL: https://curate.nd.edu/show/rj430289f1w

► X-ray bursts are some of the most energetic events known, releasing roughly 10³⁹ ergs in 10 to 100 seconds. The energy for these events… (more)

Subjects/Keywords: X-ray burst; reaction rate; 30S; neutron transfer reactions; (p; t) reactions; dispersion matching; 34Ar; 38Ca; explosive nuclearsynthesis

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APA (6^th Edition):

O'Brien, S. P. (2010). Exploring the αp-process with high precision (p,t) reactions</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/rj430289f1w

Chicago Manual of Style (16^th Edition):

O'Brien, Shawn Patrick. “Exploring the αp-process with high precision (p,t) reactions</h1>.” 2010. Doctoral Dissertation, University of Notre Dame. Accessed December 06, 2019. https://curate.nd.edu/show/rj430289f1w.

MLA Handbook (7^th Edition):

O'Brien, Shawn Patrick. “Exploring the αp-process with high precision (p,t) reactions</h1>.” 2010. Web. 06 Dec 2019.

Vancouver:

O'Brien SP. Exploring the αp-process with high precision (p,t) reactions</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2010. [cited 2019 Dec 06]. Available from: https://curate.nd.edu/show/rj430289f1w.

Council of Science Editors:

O'Brien SP. Exploring the αp-process with high precision (p,t) reactions</h1>. [Doctoral Dissertation]. University of Notre Dame; 2010. Available from: https://curate.nd.edu/show/rj430289f1w

University of Notre Dame

26. Annalia Palumbo. Alpha-Capture and Alpha-Elastic Scattering on P-Nuclei to Probe the Hauser-Feshbach Framework</h1>.

Degree: PhD, Physics, 2009, University of Notre Dame

URL: https://curate.nd.edu/show/ft848p60v5x

► The thirty five neutron deficient stable nuclei known as the p-nuclei are synthesized in a series of photodisintegration reactions of the (gamma,n), (gamma,p) and… (more)

▼ The thirty five neutron deficient stable nuclei known as the p-nuclei are synthesized in a series of photodisintegration reactions of the (gamma,n), (gamma,p) and (gamma, alpha) type in a hot gamma-flux environment. Abundance calculations involve an extended network of about 20,000 nuclear reactions of almost 2000 nuclei. The bulk of these rates are calculated theoretically with the statistical Hauser Feshbach Model (HF Model). Of particular importance in the p-process modeling are the (gamma, alpha) branchings. Even though in the astrophysical environment it is photodisintegration reactions that synthesize the p-nuclei, in the laboratory it is the inverse process that is generally measured. By detailed balance, it is possible to arrive at the relevant reactions. The experimental data for alpha-capture reactions is scarce since at the p-process temperatures (2-3 GK), the alpha-particle energies are typically of a few MeV and the corresponding cross sections very small. In addition, the results show a significant deviation compared to the model predictions. The HF cross sections are governed by transmission coefficients. These are extracted from an appropriate optical model potential (OMP). The alpha-nucleus potential in particular is poorly known at low energies mainly due to the lack of relevant data. The observed inconsistencies between the predicted and measured (alpha, gamma) rates may be due to problems with this alpha-potential parameter. To explore the applicability of the Hauser Feshbach model, to extend the experimental database of alpha-capture reactions on p-nuclei, to test the global parameterizations that currently exist, and to constrain the alpha-nucleus potential, the alpha-capture cross section of 106Cd(alpha, gamma)110Sn and the local alpha-nucleus potentials of 106Cd, 118Sn, and 120, 124, 126, 128,130Te have been measured and extracted. The experiments have been carried out at the University of Notre Dame. The results are presented here. Advisors/Committee Members: Michael Wiescher, Committee Chair.

Subjects/Keywords: p-process; alpha scattering

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APA (6^th Edition):

Palumbo, A. (2009). Alpha-Capture and Alpha-Elastic Scattering on P-Nuclei to Probe the Hauser-Feshbach Framework</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/ft848p60v5x

Chicago Manual of Style (16^th Edition):

Palumbo, Annalia. “Alpha-Capture and Alpha-Elastic Scattering on P-Nuclei to Probe the Hauser-Feshbach Framework</h1>.” 2009. Doctoral Dissertation, University of Notre Dame. Accessed December 06, 2019. https://curate.nd.edu/show/ft848p60v5x.

MLA Handbook (7^th Edition):

Palumbo, Annalia. “Alpha-Capture and Alpha-Elastic Scattering on P-Nuclei to Probe the Hauser-Feshbach Framework</h1>.” 2009. Web. 06 Dec 2019.

Vancouver:

Palumbo A. Alpha-Capture and Alpha-Elastic Scattering on P-Nuclei to Probe the Hauser-Feshbach Framework</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2009. [cited 2019 Dec 06]. Available from: https://curate.nd.edu/show/ft848p60v5x.

Council of Science Editors:

Palumbo A. Alpha-Capture and Alpha-Elastic Scattering on P-Nuclei to Probe the Hauser-Feshbach Framework</h1>. [Doctoral Dissertation]. University of Notre Dame; 2009. Available from: https://curate.nd.edu/show/ft848p60v5x

University of Toledo

27. Sosov, Yuriy. Legendre Polynomial Expansion of the Electron Boltzmann Equation Applied to the Discharge in Argon.

Degree: PhD, Physics, 2006, University of Toledo

URL: http://rave.ohiolink.edu/etdc/view?acc_num=toledo1145290801

► The main effort of the present dissertation is to establish a framework for construction of the numerical solution of the system of partial differential… (more)

Subjects/Keywords: Physics, Fluid and Plasma; Boltzmann equation; electron Boltzmann equation; electron distribution function; P<; sub>; N<; /sub>; approximation; PN approximation; Legendre polynomial expansion of Boltzmann equation; Legendre polynomial expansion of distribution function

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APA (6^th Edition):

Sosov, Y. (2006). Legendre Polynomial Expansion of the Electron Boltzmann Equation Applied to the Discharge in Argon. (Doctoral Dissertation). University of Toledo. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=toledo1145290801

Chicago Manual of Style (16^th Edition):

Sosov, Yuriy. “Legendre Polynomial Expansion of the Electron Boltzmann Equation Applied to the Discharge in Argon.” 2006. Doctoral Dissertation, University of Toledo. Accessed December 06, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1145290801.

MLA Handbook (7^th Edition):

Sosov, Yuriy. “Legendre Polynomial Expansion of the Electron Boltzmann Equation Applied to the Discharge in Argon.” 2006. Web. 06 Dec 2019.

Vancouver:

Sosov Y. Legendre Polynomial Expansion of the Electron Boltzmann Equation Applied to the Discharge in Argon. [Internet] [Doctoral dissertation]. University of Toledo; 2006. [cited 2019 Dec 06]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=toledo1145290801.

Council of Science Editors:

Sosov Y. Legendre Polynomial Expansion of the Electron Boltzmann Equation Applied to the Discharge in Argon. [Doctoral Dissertation]. University of Toledo; 2006. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=toledo1145290801

University of New South Wales

28. Clarke, Warrick Robin. Quantum interaction phenomena in p-GaAs microelectronic devices.

Degree: Physics, 2006, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/32259 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:1666/SOURCE1?view=true

► In this dissertation, we study properties of quantum interaction phenomena in two-dimensional (2D) and one-dimensional (1D) electronic systems in p-GaAs micro- and nano-scale devices. We… (more)

Subjects/Keywords: Metal insulator transition; spontaneous interlayer coherence; conductance quantization; p-type GaAs; microelectronic devices

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APA (6^th Edition):

Clarke, W. R. (2006). Quantum interaction phenomena in p-GaAs microelectronic devices. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/32259 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:1666/SOURCE1?view=true

Chicago Manual of Style (16^th Edition):

Clarke, Warrick Robin. “Quantum interaction phenomena in p-GaAs microelectronic devices.” 2006. Doctoral Dissertation, University of New South Wales. Accessed December 06, 2019. http://handle.unsw.edu.au/1959.4/32259 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:1666/SOURCE1?view=true.

MLA Handbook (7^th Edition):

Clarke, Warrick Robin. “Quantum interaction phenomena in p-GaAs microelectronic devices.” 2006. Web. 06 Dec 2019.

Vancouver:

Clarke WR. Quantum interaction phenomena in p-GaAs microelectronic devices. [Internet] [Doctoral dissertation]. University of New South Wales; 2006. [cited 2019 Dec 06]. Available from: http://handle.unsw.edu.au/1959.4/32259 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:1666/SOURCE1?view=true.

Council of Science Editors:

Clarke WR. Quantum interaction phenomena in p-GaAs microelectronic devices. [Doctoral Dissertation]. University of New South Wales; 2006. Available from: http://handle.unsw.edu.au/1959.4/32259 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:1666/SOURCE1?view=true

Penn State University

29. Nelson, Karl D. Phase-Sensitive Determination of the Pairing Symmetry in Sr₂RuO₄.

Degree: PhD, Physics, 2004, Penn State University

URL: https://etda.libraries.psu.edu/catalog/6467

► Sr₂RuO₄, an unconventional superconducting material with T_c=1.5 K, was predicted to possess a superconducting state with an order parameter of odd-parity symmetry. Numerous experiments have… (more)

Subjects/Keywords: odd parity; spin triplet; Sr2RuO4; p-wave; phase-sensitive; unconventional superconductivity

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Nelson, K. D. (2004). Phase-Sensitive Determination of the Pairing Symmetry in Sr₂RuO₄. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/6467

Chicago Manual of Style (16^th Edition):

Nelson, Karl D. “Phase-Sensitive Determination of the Pairing Symmetry in Sr₂RuO₄.” 2004. Doctoral Dissertation, Penn State University. Accessed December 06, 2019. https://etda.libraries.psu.edu/catalog/6467.

MLA Handbook (7^th Edition):

Nelson, Karl D. “Phase-Sensitive Determination of the Pairing Symmetry in Sr₂RuO₄.” 2004. Web. 06 Dec 2019.

Vancouver:

Nelson KD. Phase-Sensitive Determination of the Pairing Symmetry in Sr₂RuO₄. [Internet] [Doctoral dissertation]. Penn State University; 2004. [cited 2019 Dec 06]. Available from: https://etda.libraries.psu.edu/catalog/6467.

Council of Science Editors:

Nelson KD. Phase-Sensitive Determination of the Pairing Symmetry in Sr₂RuO₄. [Doctoral Dissertation]. Penn State University; 2004. Available from: https://etda.libraries.psu.edu/catalog/6467

NSYSU

30. Chen, Wei-Szu. Raman study on p-type CVD diamond.

Degree: Master, Physics, 2003, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721103-103256

► Abstract In this work, H2, CH4, and O2 are used as gas sources and C3H903B is used as the doping source, microwave plasma chemical vapor… (more)

Subjects/Keywords: Raman; p-type CVD Diamond

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Chen, W. (2003). Raman study on p-type CVD diamond. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721103-103256

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Chen, Wei-Szu. “Raman study on p-type CVD diamond.” 2003. Thesis, NSYSU. Accessed December 06, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721103-103256.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Chen, Wei-Szu. “Raman study on p-type CVD diamond.” 2003. Web. 06 Dec 2019.

Vancouver:

Chen W. Raman study on p-type CVD diamond. [Internet] [Thesis]. NSYSU; 2003. [cited 2019 Dec 06]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721103-103256.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen W. Raman study on p-type CVD diamond. [Thesis]. NSYSU; 2003. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721103-103256

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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Open Access Theses and Dissertations