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You searched for subject:(Gallium oxide). Showing records 1 – 30 of 107 total matches.

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University of Notre Dame

1. Kasra Pourang. Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>.

Degree: MSin Electrical Engineering, Electrical Engineering, 2015, University of Notre Dame

  In this work, we present the heteroepitaxial and homoepitaxial growth and characterization of single crystal Ga2O3 by plasma-assisted molecular beam epitaxy (MBE). For growth,… (more)

Subjects/Keywords: Plasma MBE; Gallium oxide

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Pourang, K. (2015). Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/bn999595w4d

Chicago Manual of Style (16th Edition):

Pourang, Kasra. “Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>.” 2015. Masters Thesis, University of Notre Dame. Accessed December 14, 2019. https://curate.nd.edu/show/bn999595w4d.

MLA Handbook (7th Edition):

Pourang, Kasra. “Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>.” 2015. Web. 14 Dec 2019.

Vancouver:

Pourang K. Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>. [Internet] [Masters thesis]. University of Notre Dame; 2015. [cited 2019 Dec 14]. Available from: https://curate.nd.edu/show/bn999595w4d.

Council of Science Editors:

Pourang K. Growth and Characterization of Beta-Gallium Oxide Thin Films Using Plasma-Assisted Molecular Beam Epitaxy</h1>. [Masters Thesis]. University of Notre Dame; 2015. Available from: https://curate.nd.edu/show/bn999595w4d


University of Louisville

2. Deshmane, Chinmay A. Rational design of mesoporous gallium oxide and gallium-based mixed oxide catalysts.

Degree: PhD, 2011, University of Louisville

 In the present study, we report the synthesis of thermally stable mesoporous gallium oxide and novel gallium-niobium mixed oxides employing Evaporation Induced Self-Assembly (EISA), Self-Assembly… (more)

Subjects/Keywords: Mesoporous materials; Catalysis; Gallium oxide; Epoxidation; Gallium-niobium oxide; Isomerization

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APA (6th Edition):

Deshmane, C. A. (2011). Rational design of mesoporous gallium oxide and gallium-based mixed oxide catalysts. (Doctoral Dissertation). University of Louisville. Retrieved from 10.18297/etd/338 ; https://ir.library.louisville.edu/etd/338

Chicago Manual of Style (16th Edition):

Deshmane, Chinmay A. “Rational design of mesoporous gallium oxide and gallium-based mixed oxide catalysts.” 2011. Doctoral Dissertation, University of Louisville. Accessed December 14, 2019. 10.18297/etd/338 ; https://ir.library.louisville.edu/etd/338.

MLA Handbook (7th Edition):

Deshmane, Chinmay A. “Rational design of mesoporous gallium oxide and gallium-based mixed oxide catalysts.” 2011. Web. 14 Dec 2019.

Vancouver:

Deshmane CA. Rational design of mesoporous gallium oxide and gallium-based mixed oxide catalysts. [Internet] [Doctoral dissertation]. University of Louisville; 2011. [cited 2019 Dec 14]. Available from: 10.18297/etd/338 ; https://ir.library.louisville.edu/etd/338.

Council of Science Editors:

Deshmane CA. Rational design of mesoporous gallium oxide and gallium-based mixed oxide catalysts. [Doctoral Dissertation]. University of Louisville; 2011. Available from: 10.18297/etd/338 ; https://ir.library.louisville.edu/etd/338


NSYSU

3. Yang, Jyun-bao. The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory.

Degree: PhD, Electro-Optical Engineering, 2014, NSYSU

 Recently, with the advancement of portable electronic products, nonvolatile memories have attracted much attention. In order to increase the capacity and density of nonvolatile memory,… (more)

Subjects/Keywords: resistive random access memory; gallium oxide; indium oxide; amorphous indium-gallium-zinc-oxide thin film transistors; indium gallium oxide

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APA (6th Edition):

Yang, J. (2014). The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038

Chicago Manual of Style (16th Edition):

Yang, Jyun-bao. “The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory.” 2014. Doctoral Dissertation, NSYSU. Accessed December 14, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038.

MLA Handbook (7th Edition):

Yang, Jyun-bao. “The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory.” 2014. Web. 14 Dec 2019.

Vancouver:

Yang J. The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory. [Internet] [Doctoral dissertation]. NSYSU; 2014. [cited 2019 Dec 14]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038.

Council of Science Editors:

Yang J. The resistive switching mechanisms of the InxGayO1-x-y based resistance random access memory. [Doctoral Dissertation]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-013038

4. Tuomisto, Filip. Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics.

Degree: 2005, Helsinki University of Technology

The vacancy defects in GaN, ZnO and (Ga,Mn)As have been studied by positron annihilation spectroscopy. We show that both the thermodynamical quantities and the kinetics… (more)

Subjects/Keywords: positron annihilation spectroscopy; zinc oxide; gallium nitride; gallium manganese arsenide

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APA (6th Edition):

Tuomisto, F. (2005). Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2005/isbn9512278243/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tuomisto, Filip. “Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics.” 2005. Thesis, Helsinki University of Technology. Accessed December 14, 2019. http://lib.tkk.fi/Diss/2005/isbn9512278243/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tuomisto, Filip. “Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics.” 2005. Web. 14 Dec 2019.

Vancouver:

Tuomisto F. Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics. [Internet] [Thesis]. Helsinki University of Technology; 2005. [cited 2019 Dec 14]. Available from: http://lib.tkk.fi/Diss/2005/isbn9512278243/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tuomisto F. Vacancy Defects in Semiconductor Materials for Opto and Spin Electronics. [Thesis]. Helsinki University of Technology; 2005. Available from: http://lib.tkk.fi/Diss/2005/isbn9512278243/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

5. chienhui, Chen. Fabrication and photocatalysis of porous GaN crystal.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 Abstract The aim of the present study is to synthesize gallium nitride photocatalysis with high specific surface area, which we expect it can promote degradation… (more)

Subjects/Keywords: lithium gallium oxide; porous gallium nitride; photocatalysis; high specific surface area

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APA (6th Edition):

chienhui, C. (2014). Fabrication and photocatalysis of porous GaN crystal. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-093333

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

chienhui, Chen. “Fabrication and photocatalysis of porous GaN crystal.” 2014. Thesis, NSYSU. Accessed December 14, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-093333.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

chienhui, Chen. “Fabrication and photocatalysis of porous GaN crystal.” 2014. Web. 14 Dec 2019.

Vancouver:

chienhui C. Fabrication and photocatalysis of porous GaN crystal. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Dec 14]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-093333.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

chienhui C. Fabrication and photocatalysis of porous GaN crystal. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-093333

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Hong Kong

6. Liu, Lining. A study on the improvement of GaAs MOS devices with high-k gate dielectric.

Degree: PhD, 2017, University of Hong Kong

 Since silicon-based Metal-Oxide-Semiconductor (MOS) technology is approaching its physical limit, high-mobility semiconductors (Ge, III-V compounds, etc.) have been proposed to replace silicon. Among them, GaAs… (more)

Subjects/Keywords: Metal oxide semiconductors; Dielectrics; Gallium arsenide semiconductors

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APA (6th Edition):

Liu, L. (2017). A study on the improvement of GaAs MOS devices with high-k gate dielectric. (Doctoral Dissertation). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/249877

Chicago Manual of Style (16th Edition):

Liu, Lining. “A study on the improvement of GaAs MOS devices with high-k gate dielectric.” 2017. Doctoral Dissertation, University of Hong Kong. Accessed December 14, 2019. http://hdl.handle.net/10722/249877.

MLA Handbook (7th Edition):

Liu, Lining. “A study on the improvement of GaAs MOS devices with high-k gate dielectric.” 2017. Web. 14 Dec 2019.

Vancouver:

Liu L. A study on the improvement of GaAs MOS devices with high-k gate dielectric. [Internet] [Doctoral dissertation]. University of Hong Kong; 2017. [cited 2019 Dec 14]. Available from: http://hdl.handle.net/10722/249877.

Council of Science Editors:

Liu L. A study on the improvement of GaAs MOS devices with high-k gate dielectric. [Doctoral Dissertation]. University of Hong Kong; 2017. Available from: http://hdl.handle.net/10722/249877


NSYSU

7. Lin, Yu-pei. Epitaxial Growth of Gallium Oxide on (001) LiGaO2 Substrate by Chemical Vapor Deposition.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 In this thesis, we use LiGaO2 (LGO)(001) substrate to grow on epitaxial gallium oxide (Ga2O3) by chemical vapor deposition (CVD). Pure gallium metal is used… (more)

Subjects/Keywords: Epitaxy; Chemical Vapor Deposition; LiGaO2; Gallium Oxide

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APA (6th Edition):

Lin, Y. (2017). Epitaxial Growth of Gallium Oxide on (001) LiGaO2 Substrate by Chemical Vapor Deposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626117-132809

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Yu-pei. “Epitaxial Growth of Gallium Oxide on (001) LiGaO2 Substrate by Chemical Vapor Deposition.” 2017. Thesis, NSYSU. Accessed December 14, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626117-132809.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Yu-pei. “Epitaxial Growth of Gallium Oxide on (001) LiGaO2 Substrate by Chemical Vapor Deposition.” 2017. Web. 14 Dec 2019.

Vancouver:

Lin Y. Epitaxial Growth of Gallium Oxide on (001) LiGaO2 Substrate by Chemical Vapor Deposition. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Dec 14]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626117-132809.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin Y. Epitaxial Growth of Gallium Oxide on (001) LiGaO2 Substrate by Chemical Vapor Deposition. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626117-132809

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

8. Feng, Zhuoqun ECE. Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT.

Degree: 2018, Hong Kong University of Science and Technology

 With their relatively low process temperature, high field-effect mobility, low leakage current and high transparency, thin-film transistors (TFTs) based on metal oxide (MO), especially indium-gallium-zinc… (more)

Subjects/Keywords: Thin film transistors; Indium gallium zinc oxide; Metal oxide semiconductors; Electrodes

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APA (6th Edition):

Feng, Z. E. (2018). Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Feng, Zhuoqun ECE. “Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT.” 2018. Thesis, Hong Kong University of Science and Technology. Accessed December 14, 2019. https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Feng, Zhuoqun ECE. “Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT.” 2018. Web. 14 Dec 2019.

Vancouver:

Feng ZE. Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2018. [cited 2019 Dec 14]. Available from: https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Feng ZE. Threshold voltage tuning by channel modulation and thermal annealing processes for IGZO TFT. [Thesis]. Hong Kong University of Science and Technology; 2018. Available from: https://doi.org/10.14711/thesis-991012589068403412 ; http://repository.ust.hk/ir/bitstream/1783.1-97195/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

9. Lu, Lei. Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide.

Degree: 2014, Hong Kong University of Science and Technology

 Thin-film transistors (TFTs) based on metal oxides (MOs), especially zinc oxide (ZnO) and indium-gallium-zinc oxide (IGZO), are promising alternatives to silicon-based TFTs in future flat-panel… (more)

Subjects/Keywords: Thin film transistors; Metal oxide semiconductors; Zinc oxide; Indium gallium zinc oxide

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APA (6th Edition):

Lu, L. (2014). Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1347295 ; http://repository.ust.hk/ir/bitstream/1783.1-71879/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lu, Lei. “Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide.” 2014. Thesis, Hong Kong University of Science and Technology. Accessed December 14, 2019. https://doi.org/10.14711/thesis-b1347295 ; http://repository.ust.hk/ir/bitstream/1783.1-71879/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lu, Lei. “Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide.” 2014. Web. 14 Dec 2019.

Vancouver:

Lu L. Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2014. [cited 2019 Dec 14]. Available from: https://doi.org/10.14711/thesis-b1347295 ; http://repository.ust.hk/ir/bitstream/1783.1-71879/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lu L. Physics and technology of thin-film transistors based on zinc oxide and indium-gallium-zine oxide. [Thesis]. Hong Kong University of Science and Technology; 2014. Available from: https://doi.org/10.14711/thesis-b1347295 ; http://repository.ust.hk/ir/bitstream/1783.1-71879/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

10. Huang, Jheng-Jie. Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device.

Degree: PhD, Physics, 2013, NSYSU

 With the development of portable electronic products, the requirement of nonvolatile memory is higher than before. In order to increase the capacity of nonvolatile memory… (more)

Subjects/Keywords: gallium oxide; indium-gallium-zinc oxide thin film transistors; BiFeO; recoverable RRAM device; nonvolatile memory; RRAM; resistive random access memory

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APA (6th Edition):

Huang, J. (2013). Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157

Chicago Manual of Style (16th Edition):

Huang, Jheng-Jie. “Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device.” 2013. Doctoral Dissertation, NSYSU. Accessed December 14, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157.

MLA Handbook (7th Edition):

Huang, Jheng-Jie. “Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device.” 2013. Web. 14 Dec 2019.

Vancouver:

Huang J. Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2019 Dec 14]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157.

Council of Science Editors:

Huang J. Investigation on the resistive switching mechanisms and fabrication of recoverable RRAM device. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719113-171157


Hong Kong University of Science and Technology

11. Zhou, Xiuju. InGaAs buried channel metal-oxide-semiconductor field-effect transistors for low-power logic applications.

Degree: 2012, Hong Kong University of Science and Technology

 As Silicon complementary-oxide-semiconductor (CMOS) devices scale into the sub-22nm regime, severe short channel effects and power-dissipation constraints lead to huge challenges. To maintain high switching… (more)

Subjects/Keywords: Metal oxide semiconductor field-effect transistors; Gallium arsenide semiconductors; Metal oxide semiconductors

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APA (6th Edition):

Zhou, X. (2012). InGaAs buried channel metal-oxide-semiconductor field-effect transistors for low-power logic applications. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1198657 ; http://repository.ust.hk/ir/bitstream/1783.1-7797/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhou, Xiuju. “InGaAs buried channel metal-oxide-semiconductor field-effect transistors for low-power logic applications.” 2012. Thesis, Hong Kong University of Science and Technology. Accessed December 14, 2019. https://doi.org/10.14711/thesis-b1198657 ; http://repository.ust.hk/ir/bitstream/1783.1-7797/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhou, Xiuju. “InGaAs buried channel metal-oxide-semiconductor field-effect transistors for low-power logic applications.” 2012. Web. 14 Dec 2019.

Vancouver:

Zhou X. InGaAs buried channel metal-oxide-semiconductor field-effect transistors for low-power logic applications. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2012. [cited 2019 Dec 14]. Available from: https://doi.org/10.14711/thesis-b1198657 ; http://repository.ust.hk/ir/bitstream/1783.1-7797/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhou X. InGaAs buried channel metal-oxide-semiconductor field-effect transistors for low-power logic applications. [Thesis]. Hong Kong University of Science and Technology; 2012. Available from: https://doi.org/10.14711/thesis-b1198657 ; http://repository.ust.hk/ir/bitstream/1783.1-7797/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Bowling Green State University

12. Rana, Dhan B. Electrical transport and photo-induced phenomena in Ga2O3 single crystal.

Degree: MS, Physics, 2018, Bowling Green State University

Gallium Oxide (Ga2O3) is a highly resistive material because of its wide band gap. However,the conductivity of Edge-defined film-fed growth (EFG) Ga2O3 crystal increased by… (more)

Subjects/Keywords: Physics; Gallium oxide; Transparent semiconducting oxide; Photoconductivity; Persistent photoconductivity; Hall effect, GIPS

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APA (6th Edition):

Rana, D. B. (2018). Electrical transport and photo-induced phenomena in Ga2O3 single crystal. (Masters Thesis). Bowling Green State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1529409880030348

Chicago Manual of Style (16th Edition):

Rana, Dhan B. “Electrical transport and photo-induced phenomena in Ga2O3 single crystal.” 2018. Masters Thesis, Bowling Green State University. Accessed December 14, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1529409880030348.

MLA Handbook (7th Edition):

Rana, Dhan B. “Electrical transport and photo-induced phenomena in Ga2O3 single crystal.” 2018. Web. 14 Dec 2019.

Vancouver:

Rana DB. Electrical transport and photo-induced phenomena in Ga2O3 single crystal. [Internet] [Masters thesis]. Bowling Green State University; 2018. [cited 2019 Dec 14]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1529409880030348.

Council of Science Editors:

Rana DB. Electrical transport and photo-induced phenomena in Ga2O3 single crystal. [Masters Thesis]. Bowling Green State University; 2018. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=bgsu1529409880030348


NSYSU

13. Zheng, Jie-Yu. Growth of Gallium Oxide onï¼100ï¼Î³-LiAlO2 Substrate by Chemical Vapor Deposition.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

 In this study, gallium oxide (Ga2O3) was grown on LiAlO2 (LAO) substrate by chemical vapor deposition (CVD). Argon and oxygen are used as carrier gas… (more)

Subjects/Keywords: wide-band-gap semiconductor; Chemical Vapor Deposition; LiAlO2; Gallium Oxide

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APA (6th Edition):

Zheng, J. (2016). Growth of Gallium Oxide onï¼100ï¼Î³-LiAlO2 Substrate by Chemical Vapor Deposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0619116-230358

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zheng, Jie-Yu. “Growth of Gallium Oxide onï¼100ï¼Î³-LiAlO2 Substrate by Chemical Vapor Deposition.” 2016. Thesis, NSYSU. Accessed December 14, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0619116-230358.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zheng, Jie-Yu. “Growth of Gallium Oxide onï¼100ï¼Î³-LiAlO2 Substrate by Chemical Vapor Deposition.” 2016. Web. 14 Dec 2019.

Vancouver:

Zheng J. Growth of Gallium Oxide onï¼100ï¼Î³-LiAlO2 Substrate by Chemical Vapor Deposition. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Dec 14]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0619116-230358.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zheng J. Growth of Gallium Oxide onï¼100ï¼Î³-LiAlO2 Substrate by Chemical Vapor Deposition. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0619116-230358

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Carnegie Mellon University

14. Yao, Yao. Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers.

Degree: 2017, Carnegie Mellon University

Gallium Oxide (Ga2O3) has emerged over the last decade as a new up-and-coming alternative to traditional wide bandgap semiconductors. It exists as five polymorphs (α-,… (more)

Subjects/Keywords: epitaxial growth; gallium oxide; ohmic contact; schottky contact; semiconductor; wide bandgap

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APA (6th Edition):

Yao, Y. (2017). Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers. (Thesis). Carnegie Mellon University. Retrieved from http://repository.cmu.edu/dissertations/921

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yao, Yao. “Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers.” 2017. Thesis, Carnegie Mellon University. Accessed December 14, 2019. http://repository.cmu.edu/dissertations/921.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yao, Yao. “Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers.” 2017. Web. 14 Dec 2019.

Vancouver:

Yao Y. Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers. [Internet] [Thesis]. Carnegie Mellon University; 2017. [cited 2019 Dec 14]. Available from: http://repository.cmu.edu/dissertations/921.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yao Y. Growth, Characterization and Contacts to Ga2O3 Single Crystal Substrates and Epitaxial Layers. [Thesis]. Carnegie Mellon University; 2017. Available from: http://repository.cmu.edu/dissertations/921

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


George Mason University

15. Moser, Neil Austin. GALLIUM OXIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR ANALYTICAL MODELING AND POWER TRANSISTOR DESIGN TRADES .

Degree: 2017, George Mason University

Gallium oxide has recently emerged as a promising semiconductor material for high voltage switch applications owing to its ultra-wide band gap of ~4.8 eV and… (more)

Subjects/Keywords: Electrical engineering; Analytical Model; Gallium Oxide; MOSFET; Power Switch

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APA (6th Edition):

Moser, N. A. (2017). GALLIUM OXIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR ANALYTICAL MODELING AND POWER TRANSISTOR DESIGN TRADES . (Thesis). George Mason University. Retrieved from http://hdl.handle.net/1920/11327

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Moser, Neil Austin. “GALLIUM OXIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR ANALYTICAL MODELING AND POWER TRANSISTOR DESIGN TRADES .” 2017. Thesis, George Mason University. Accessed December 14, 2019. http://hdl.handle.net/1920/11327.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Moser, Neil Austin. “GALLIUM OXIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR ANALYTICAL MODELING AND POWER TRANSISTOR DESIGN TRADES .” 2017. Web. 14 Dec 2019.

Vancouver:

Moser NA. GALLIUM OXIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR ANALYTICAL MODELING AND POWER TRANSISTOR DESIGN TRADES . [Internet] [Thesis]. George Mason University; 2017. [cited 2019 Dec 14]. Available from: http://hdl.handle.net/1920/11327.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Moser NA. GALLIUM OXIDE METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR ANALYTICAL MODELING AND POWER TRANSISTOR DESIGN TRADES . [Thesis]. George Mason University; 2017. Available from: http://hdl.handle.net/1920/11327

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Connecticut

16. Cui, Can. Preparation and Structural Tuning of Ga2O3 based Nanorod Arrays.

Degree: MS, Materials Science and Engineering, 1993, University of Connecticut

Subjects/Keywords: Semiconductor; Gallium oxide; Photocatalysts

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APA (6th Edition):

Cui, C. (1993). Preparation and Structural Tuning of Ga2O3 based Nanorod Arrays. (Masters Thesis). University of Connecticut. Retrieved from https://opencommons.uconn.edu/gs_theses/1280

Chicago Manual of Style (16th Edition):

Cui, Can. “Preparation and Structural Tuning of Ga2O3 based Nanorod Arrays.” 1993. Masters Thesis, University of Connecticut. Accessed December 14, 2019. https://opencommons.uconn.edu/gs_theses/1280.

MLA Handbook (7th Edition):

Cui, Can. “Preparation and Structural Tuning of Ga2O3 based Nanorod Arrays.” 1993. Web. 14 Dec 2019.

Vancouver:

Cui C. Preparation and Structural Tuning of Ga2O3 based Nanorod Arrays. [Internet] [Masters thesis]. University of Connecticut; 1993. [cited 2019 Dec 14]. Available from: https://opencommons.uconn.edu/gs_theses/1280.

Council of Science Editors:

Cui C. Preparation and Structural Tuning of Ga2O3 based Nanorod Arrays. [Masters Thesis]. University of Connecticut; 1993. Available from: https://opencommons.uconn.edu/gs_theses/1280


The Ohio State University

17. Yu, Yongze, Yu. Understanding of correlation between size and coloration of Copper Gallium Oxide and its application in perovskite solar cell.

Degree: MS, Chemistry, 2016, The Ohio State University

 Understanding and application of nanostructure metal oxide semiconductor is fundamentally significant in science and technology field. With further investigation of the chemical and physical characteristics… (more)

Subjects/Keywords: Chemistry; delafossite, copper gallium oxide, coloration, perovskite solar cell

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APA (6th Edition):

Yu, Yongze, Y. (2016). Understanding of correlation between size and coloration of Copper Gallium Oxide and its application in perovskite solar cell. (Masters Thesis). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1471362649

Chicago Manual of Style (16th Edition):

Yu, Yongze, Yu. “Understanding of correlation between size and coloration of Copper Gallium Oxide and its application in perovskite solar cell.” 2016. Masters Thesis, The Ohio State University. Accessed December 14, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1471362649.

MLA Handbook (7th Edition):

Yu, Yongze, Yu. “Understanding of correlation between size and coloration of Copper Gallium Oxide and its application in perovskite solar cell.” 2016. Web. 14 Dec 2019.

Vancouver:

Yu, Yongze Y. Understanding of correlation between size and coloration of Copper Gallium Oxide and its application in perovskite solar cell. [Internet] [Masters thesis]. The Ohio State University; 2016. [cited 2019 Dec 14]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1471362649.

Council of Science Editors:

Yu, Yongze Y. Understanding of correlation between size and coloration of Copper Gallium Oxide and its application in perovskite solar cell. [Masters Thesis]. The Ohio State University; 2016. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1471362649


NSYSU

18. Chang Chien, Shi-Hung. Study on the Bulk Oxygen Effect and Reducing Forming Voltage in a Novel Resistance Random Access Memory.

Degree: Master, Materials and Optoelectronic Science, 2015, NSYSU

 With the evolution of technology, the use of the memory is more and more frequent, so that itâs importance catches more and more attention. RRAM… (more)

Subjects/Keywords: RRAM; forming voltage; forming current compliance; Indium tin oxide doped gallium oxide; low dielectric oxide layer; bulk effect oxygen conduction

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APA (6th Edition):

Chang Chien, S. (2015). Study on the Bulk Oxygen Effect and Reducing Forming Voltage in a Novel Resistance Random Access Memory. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627115-101740

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang Chien, Shi-Hung. “Study on the Bulk Oxygen Effect and Reducing Forming Voltage in a Novel Resistance Random Access Memory.” 2015. Thesis, NSYSU. Accessed December 14, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627115-101740.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang Chien, Shi-Hung. “Study on the Bulk Oxygen Effect and Reducing Forming Voltage in a Novel Resistance Random Access Memory.” 2015. Web. 14 Dec 2019.

Vancouver:

Chang Chien S. Study on the Bulk Oxygen Effect and Reducing Forming Voltage in a Novel Resistance Random Access Memory. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Dec 14]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627115-101740.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang Chien S. Study on the Bulk Oxygen Effect and Reducing Forming Voltage in a Novel Resistance Random Access Memory. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627115-101740

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Lehigh University

19. Weiser, Philip Michael. Studies of Hydrogen Defects and Free-Carrier Absorption in Transparent Conducting Oxides using Fourier Transform Infrared Spectroscopy.

Degree: PhD, Physics, 2017, Lehigh University

 Transparent conducting oxides (TCOs) are wide-band-gap, metal-oxide semiconductors that combine high electrical conductivity with transparency to visible light. These properties have made TCOs attractive candidates… (more)

Subjects/Keywords: free-carrier absorption; gallium oxide; hydrogen defects; indium oxide; transparent conducting oxides; zinc oxide; Physical Sciences and Mathematics; Physics

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APA (6th Edition):

Weiser, P. M. (2017). Studies of Hydrogen Defects and Free-Carrier Absorption in Transparent Conducting Oxides using Fourier Transform Infrared Spectroscopy. (Doctoral Dissertation). Lehigh University. Retrieved from https://preserve.lehigh.edu/etd/2872

Chicago Manual of Style (16th Edition):

Weiser, Philip Michael. “Studies of Hydrogen Defects and Free-Carrier Absorption in Transparent Conducting Oxides using Fourier Transform Infrared Spectroscopy.” 2017. Doctoral Dissertation, Lehigh University. Accessed December 14, 2019. https://preserve.lehigh.edu/etd/2872.

MLA Handbook (7th Edition):

Weiser, Philip Michael. “Studies of Hydrogen Defects and Free-Carrier Absorption in Transparent Conducting Oxides using Fourier Transform Infrared Spectroscopy.” 2017. Web. 14 Dec 2019.

Vancouver:

Weiser PM. Studies of Hydrogen Defects and Free-Carrier Absorption in Transparent Conducting Oxides using Fourier Transform Infrared Spectroscopy. [Internet] [Doctoral dissertation]. Lehigh University; 2017. [cited 2019 Dec 14]. Available from: https://preserve.lehigh.edu/etd/2872.

Council of Science Editors:

Weiser PM. Studies of Hydrogen Defects and Free-Carrier Absorption in Transparent Conducting Oxides using Fourier Transform Infrared Spectroscopy. [Doctoral Dissertation]. Lehigh University; 2017. Available from: https://preserve.lehigh.edu/etd/2872


University of Waterloo

20. Chiu, Wan Hang Melanie. Förster Resonance Energy Transfer Mediated White-Light-Emitting Rhodamine Fluorophore Derivatives-Gamma Phase Gallium Oxide Nanostructures.

Degree: 2012, University of Waterloo

 The global lighting source energy consumption accounts for about 22% of the total electricity generated. New high-efficiency solid-state light sources are needed to reduce the… (more)

Subjects/Keywords: White-light-emitting; Light emitting diode; Transparent conducting oxides; Nanoparticles; Quasi single hybrid chromophore; Nanolite; Gamma-phase gallium oxide; Gallium oxide; Zinc oxide; Rhodamine Fluorophore; Förster resonance energy transfer

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APA (6th Edition):

Chiu, W. H. M. (2012). Förster Resonance Energy Transfer Mediated White-Light-Emitting Rhodamine Fluorophore Derivatives-Gamma Phase Gallium Oxide Nanostructures. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/7036

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chiu, Wan Hang Melanie. “Förster Resonance Energy Transfer Mediated White-Light-Emitting Rhodamine Fluorophore Derivatives-Gamma Phase Gallium Oxide Nanostructures.” 2012. Thesis, University of Waterloo. Accessed December 14, 2019. http://hdl.handle.net/10012/7036.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chiu, Wan Hang Melanie. “Förster Resonance Energy Transfer Mediated White-Light-Emitting Rhodamine Fluorophore Derivatives-Gamma Phase Gallium Oxide Nanostructures.” 2012. Web. 14 Dec 2019.

Vancouver:

Chiu WHM. Förster Resonance Energy Transfer Mediated White-Light-Emitting Rhodamine Fluorophore Derivatives-Gamma Phase Gallium Oxide Nanostructures. [Internet] [Thesis]. University of Waterloo; 2012. [cited 2019 Dec 14]. Available from: http://hdl.handle.net/10012/7036.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chiu WHM. Förster Resonance Energy Transfer Mediated White-Light-Emitting Rhodamine Fluorophore Derivatives-Gamma Phase Gallium Oxide Nanostructures. [Thesis]. University of Waterloo; 2012. Available from: http://hdl.handle.net/10012/7036

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

21. Nguyen, Thi Thu Thuy. Etude des transistors en couches minces à base d’IGZO pour leur application aux écrans plats à matrice active LCD et OLED : Study of thin film transistors based on Indium Gallium Zinc Oxide for their applications in active matrix flat panel LCD and OLED display.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2014, Université de Grenoble

Ce travail de thèse a pour sujet l'étude de transistors en couches minces (TFTs) à base d'Indium Gallium Zinc Oxide (IGZO). Nous nous sommes intéressés… (more)

Subjects/Keywords: Transitors en couches minces; Indium Gallium Zinc Oxide; Passivation; Tension de seuil; Recuit; AMOLED; Thin film transistors; Indium Gallium Zinc Oxide; Passivation; Threshold voltage; Annealing; AMOLED; 620

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APA (6th Edition):

Nguyen, T. T. T. (2014). Etude des transistors en couches minces à base d’IGZO pour leur application aux écrans plats à matrice active LCD et OLED : Study of thin film transistors based on Indium Gallium Zinc Oxide for their applications in active matrix flat panel LCD and OLED display. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2014GRENT060

Chicago Manual of Style (16th Edition):

Nguyen, Thi Thu Thuy. “Etude des transistors en couches minces à base d’IGZO pour leur application aux écrans plats à matrice active LCD et OLED : Study of thin film transistors based on Indium Gallium Zinc Oxide for their applications in active matrix flat panel LCD and OLED display.” 2014. Doctoral Dissertation, Université de Grenoble. Accessed December 14, 2019. http://www.theses.fr/2014GRENT060.

MLA Handbook (7th Edition):

Nguyen, Thi Thu Thuy. “Etude des transistors en couches minces à base d’IGZO pour leur application aux écrans plats à matrice active LCD et OLED : Study of thin film transistors based on Indium Gallium Zinc Oxide for their applications in active matrix flat panel LCD and OLED display.” 2014. Web. 14 Dec 2019.

Vancouver:

Nguyen TTT. Etude des transistors en couches minces à base d’IGZO pour leur application aux écrans plats à matrice active LCD et OLED : Study of thin film transistors based on Indium Gallium Zinc Oxide for their applications in active matrix flat panel LCD and OLED display. [Internet] [Doctoral dissertation]. Université de Grenoble; 2014. [cited 2019 Dec 14]. Available from: http://www.theses.fr/2014GRENT060.

Council of Science Editors:

Nguyen TTT. Etude des transistors en couches minces à base d’IGZO pour leur application aux écrans plats à matrice active LCD et OLED : Study of thin film transistors based on Indium Gallium Zinc Oxide for their applications in active matrix flat panel LCD and OLED display. [Doctoral Dissertation]. Université de Grenoble; 2014. Available from: http://www.theses.fr/2014GRENT060


Youngstown State University

22. Isukapati, Sundar Babu. Gallium Oxide Thin Films for Optoelectronic Applications.

Degree: MSin Engineering, Department of Electrical and Computer Engineering, 2018, Youngstown State University

Gallium oxide (Ga2O3) belongs to the family of transparent conducting oxides (TCOs) which have emerged as attractive semiconductor material due their excellent properties. TCOs offer… (more)

Subjects/Keywords: Engineering; Materials Science; Solid State Physics; Gallium Oxide; thin films; magnetron sputtering; single crystal

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APA (6th Edition):

Isukapati, S. B. (2018). Gallium Oxide Thin Films for Optoelectronic Applications. (Masters Thesis). Youngstown State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ysu1527125539086742

Chicago Manual of Style (16th Edition):

Isukapati, Sundar Babu. “Gallium Oxide Thin Films for Optoelectronic Applications.” 2018. Masters Thesis, Youngstown State University. Accessed December 14, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1527125539086742.

MLA Handbook (7th Edition):

Isukapati, Sundar Babu. “Gallium Oxide Thin Films for Optoelectronic Applications.” 2018. Web. 14 Dec 2019.

Vancouver:

Isukapati SB. Gallium Oxide Thin Films for Optoelectronic Applications. [Internet] [Masters thesis]. Youngstown State University; 2018. [cited 2019 Dec 14]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ysu1527125539086742.

Council of Science Editors:

Isukapati SB. Gallium Oxide Thin Films for Optoelectronic Applications. [Masters Thesis]. Youngstown State University; 2018. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ysu1527125539086742


NSYSU

23. Hsu, Chun-Chi. Epitaxial growth of gallium oxide on AlN/sapphire substrate by chemical vapor deposition.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

 Being a wide bandgap semiconductor material, gallium oxide (Ga2O3) has been prepared by many methods. In this study, gallium oxide was grown on AlN/sapphire single… (more)

Subjects/Keywords: Hall measurement; wide bandgap semiconductor; chemical vapor deposition; gallium oxide; aluminum nitride; sapphire

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APA (6th Edition):

Hsu, C. (2017). Epitaxial growth of gallium oxide on AlN/sapphire substrate by chemical vapor deposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626117-123629

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsu, Chun-Chi. “Epitaxial growth of gallium oxide on AlN/sapphire substrate by chemical vapor deposition.” 2017. Thesis, NSYSU. Accessed December 14, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626117-123629.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsu, Chun-Chi. “Epitaxial growth of gallium oxide on AlN/sapphire substrate by chemical vapor deposition.” 2017. Web. 14 Dec 2019.

Vancouver:

Hsu C. Epitaxial growth of gallium oxide on AlN/sapphire substrate by chemical vapor deposition. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Dec 14]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626117-123629.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsu C. Epitaxial growth of gallium oxide on AlN/sapphire substrate by chemical vapor deposition. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626117-123629

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Canterbury

24. Whiteside, Matthew David. Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide.

Degree: Electrical and Electronic Engineering, 2014, University of Canterbury

 Indium-Gallium-Zinc-Oxide (a-IGZO) is an amorphous oxide semiconductor that has been attracting increasing attention for use in flat panel display and optoelectronic applications. This is largely… (more)

Subjects/Keywords: IGZO; Indium Gallium Zinc Oxide; MESFET; AOS; Amorphous Semiconductor; Transparent Flexible Electronics

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APA (6th Edition):

Whiteside, M. D. (2014). Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide. (Thesis). University of Canterbury. Retrieved from http://hdl.handle.net/10092/9588

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Whiteside, Matthew David. “Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide.” 2014. Thesis, University of Canterbury. Accessed December 14, 2019. http://hdl.handle.net/10092/9588.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Whiteside, Matthew David. “Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide.” 2014. Web. 14 Dec 2019.

Vancouver:

Whiteside MD. Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide. [Internet] [Thesis]. University of Canterbury; 2014. [cited 2019 Dec 14]. Available from: http://hdl.handle.net/10092/9588.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Whiteside MD. Characterisation and stability of MESFETs fabricated on amorphous indium-gallium-zinc-oxide. [Thesis]. University of Canterbury; 2014. Available from: http://hdl.handle.net/10092/9588

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

25. Yang, Man-Chun. Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application.

Degree: Master, Electro-Optical Engineering, 2013, NSYSU

 In recent year, the large size and high pixel is need for variously advanced displays. Thus, the stable reliability and standard characteristic is most important… (more)

Subjects/Keywords: indium-gallium-zinc-oxide thin film transistor; UV sensor; light induced instability; high current stress

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APA (6th Edition):

Yang, M. (2013). Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Man-Chun. “Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application.” 2013. Thesis, NSYSU. Accessed December 14, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Man-Chun. “Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application.” 2013. Web. 14 Dec 2019.

Vancouver:

Yang M. Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Dec 14]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang M. Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Hong Kong

26. Chen, Xinyi. Wide band-gap nanostructure based devices.

Degree: PhD, 2012, University of Hong Kong

Wide band gap based nanostructures have being attracting much research interest because of their promise for application in optoelectronic devices. Among those wide band gap… (more)

Subjects/Keywords: Gallium nitride.; Zinc oxide.; Wide gap semiconductors - Materials.; Nanostructured materials.; Solar cells.; Light emitting diodes.

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APA (6th Edition):

Chen, X. (2012). Wide band-gap nanostructure based devices. (Doctoral Dissertation). University of Hong Kong. Retrieved from Chen, X. [陈辛夷]. (2012). Wide band-gap nanostructure based devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4979929 ; http://dx.doi.org/10.5353/th_b4979929 ; http://hdl.handle.net/10722/181497

Chicago Manual of Style (16th Edition):

Chen, Xinyi. “Wide band-gap nanostructure based devices.” 2012. Doctoral Dissertation, University of Hong Kong. Accessed December 14, 2019. Chen, X. [陈辛夷]. (2012). Wide band-gap nanostructure based devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4979929 ; http://dx.doi.org/10.5353/th_b4979929 ; http://hdl.handle.net/10722/181497.

MLA Handbook (7th Edition):

Chen, Xinyi. “Wide band-gap nanostructure based devices.” 2012. Web. 14 Dec 2019.

Vancouver:

Chen X. Wide band-gap nanostructure based devices. [Internet] [Doctoral dissertation]. University of Hong Kong; 2012. [cited 2019 Dec 14]. Available from: Chen, X. [陈辛夷]. (2012). Wide band-gap nanostructure based devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4979929 ; http://dx.doi.org/10.5353/th_b4979929 ; http://hdl.handle.net/10722/181497.

Council of Science Editors:

Chen X. Wide band-gap nanostructure based devices. [Doctoral Dissertation]. University of Hong Kong; 2012. Available from: Chen, X. [陈辛夷]. (2012). Wide band-gap nanostructure based devices. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4979929 ; http://dx.doi.org/10.5353/th_b4979929 ; http://hdl.handle.net/10722/181497


Ohio University

27. Vaughn, Joel M. Manipulation Of Nanoscale Objects in the Transmission Electron Microscope.

Degree: MS, Physics (Arts and Sciences), 2007, Ohio University

 This thesis presents a transmission electron microscope fitted with a home designed and built nano manipulator for novel in situ experimentation. The selectivity and nano… (more)

Subjects/Keywords: Physics, Condensed Matter; TEM-STM; TEM; STM; Gallium Oxide; Nanomanipulation; nanobelt; nanoribbon

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APA (6th Edition):

Vaughn, J. M. (2007). Manipulation Of Nanoscale Objects in the Transmission Electron Microscope. (Masters Thesis). Ohio University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1191525305

Chicago Manual of Style (16th Edition):

Vaughn, Joel M. “Manipulation Of Nanoscale Objects in the Transmission Electron Microscope.” 2007. Masters Thesis, Ohio University. Accessed December 14, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1191525305.

MLA Handbook (7th Edition):

Vaughn, Joel M. “Manipulation Of Nanoscale Objects in the Transmission Electron Microscope.” 2007. Web. 14 Dec 2019.

Vancouver:

Vaughn JM. Manipulation Of Nanoscale Objects in the Transmission Electron Microscope. [Internet] [Masters thesis]. Ohio University; 2007. [cited 2019 Dec 14]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1191525305.

Council of Science Editors:

Vaughn JM. Manipulation Of Nanoscale Objects in the Transmission Electron Microscope. [Masters Thesis]. Ohio University; 2007. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1191525305


University of Manchester

28. Fryer, Antony Colin. Amorphous Indium-Gallium-Zinc Oxide Planar Nanodiodes.

Degree: 2014, University of Manchester

 In this thesis work, novel planar nanodiodes (PNDs) using an amorphous indiumgallium- zinc oxide (IGZO) film as the active layer have been electrically characterised for… (more)

Subjects/Keywords: Planar Nanodiode; Self-Switching Diode; Indium-Gallium-Zinc Oxide; Nanoimprint; High Rectification; Self-aligned contacts

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APA (6th Edition):

Fryer, A. C. (2014). Amorphous Indium-Gallium-Zinc Oxide Planar Nanodiodes. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:218002

Chicago Manual of Style (16th Edition):

Fryer, Antony Colin. “Amorphous Indium-Gallium-Zinc Oxide Planar Nanodiodes.” 2014. Doctoral Dissertation, University of Manchester. Accessed December 14, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:218002.

MLA Handbook (7th Edition):

Fryer, Antony Colin. “Amorphous Indium-Gallium-Zinc Oxide Planar Nanodiodes.” 2014. Web. 14 Dec 2019.

Vancouver:

Fryer AC. Amorphous Indium-Gallium-Zinc Oxide Planar Nanodiodes. [Internet] [Doctoral dissertation]. University of Manchester; 2014. [cited 2019 Dec 14]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:218002.

Council of Science Editors:

Fryer AC. Amorphous Indium-Gallium-Zinc Oxide Planar Nanodiodes. [Doctoral Dissertation]. University of Manchester; 2014. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:218002


University of British Columbia

29. Yan, George. Studies on sublimed GaAs films, anodic A12O3 films and A12O3/GaAs interfaces .

Degree: 1970, University of British Columbia

 The structural and electrical properties of sublimed GaAs films, the dielectric properties of anodic A1₂O₃ films and the electrical properties of A1₂O₃/GaAs interfaces are of… (more)

Subjects/Keywords: Gallium arsenide; Aluminum oxide; Thin films

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APA (6th Edition):

Yan, G. (1970). Studies on sublimed GaAs films, anodic A12O3 films and A12O3/GaAs interfaces . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/35121

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yan, George. “Studies on sublimed GaAs films, anodic A12O3 films and A12O3/GaAs interfaces .” 1970. Thesis, University of British Columbia. Accessed December 14, 2019. http://hdl.handle.net/2429/35121.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yan, George. “Studies on sublimed GaAs films, anodic A12O3 films and A12O3/GaAs interfaces .” 1970. Web. 14 Dec 2019.

Vancouver:

Yan G. Studies on sublimed GaAs films, anodic A12O3 films and A12O3/GaAs interfaces . [Internet] [Thesis]. University of British Columbia; 1970. [cited 2019 Dec 14]. Available from: http://hdl.handle.net/2429/35121.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yan G. Studies on sublimed GaAs films, anodic A12O3 films and A12O3/GaAs interfaces . [Thesis]. University of British Columbia; 1970. Available from: http://hdl.handle.net/2429/35121

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Pretoria

30. Van Schalkwyk, Louwrens. Development and characterization of a tuneable AlGaN-based solar-blind UV-sensitive Schottky photodiode.

Degree: Physics, 2016, University of Pretoria

 Several applications require the detection of terrestrial UV-C signatures. Efficiency, compactness, environmentally friendly and cost-effective requirements for UV-C–detectors resulted in a research interest in wide-bandgap… (more)

Subjects/Keywords: Aluminium gallium nitride; Iridium(IV) oxide; Optoelectronic; Ultraviolet (UV); UV-to-visible rejection ratio; UCTD

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Van Schalkwyk, L. (2016). Development and characterization of a tuneable AlGaN-based solar-blind UV-sensitive Schottky photodiode. (Masters Thesis). University of Pretoria. Retrieved from http://hdl.handle.net/2263/49880

Chicago Manual of Style (16th Edition):

Van Schalkwyk, Louwrens. “Development and characterization of a tuneable AlGaN-based solar-blind UV-sensitive Schottky photodiode.” 2016. Masters Thesis, University of Pretoria. Accessed December 14, 2019. http://hdl.handle.net/2263/49880.

MLA Handbook (7th Edition):

Van Schalkwyk, Louwrens. “Development and characterization of a tuneable AlGaN-based solar-blind UV-sensitive Schottky photodiode.” 2016. Web. 14 Dec 2019.

Vancouver:

Van Schalkwyk L. Development and characterization of a tuneable AlGaN-based solar-blind UV-sensitive Schottky photodiode. [Internet] [Masters thesis]. University of Pretoria; 2016. [cited 2019 Dec 14]. Available from: http://hdl.handle.net/2263/49880.

Council of Science Editors:

Van Schalkwyk L. Development and characterization of a tuneable AlGaN-based solar-blind UV-sensitive Schottky photodiode. [Masters Thesis]. University of Pretoria; 2016. Available from: http://hdl.handle.net/2263/49880

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