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You searched for subject:(GaN). Showing records 1 – 30 of 774 total matches.

[1] [2] [3] [4] [5] … [26]

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University of Illinois – Urbana-Champaign

1. Khetan, Ashish Kumar. PacGAN: The power of two samples in generative adversarial networks.

Degree: MS, Computer Science, 2018, University of Illinois – Urbana-Champaign

 Generative adversarial networks (GANs) are innovative techniques for learning generative models of complex data distributions from samples. Despite remarkable recent improvements in generating realistic images,… (more)

Subjects/Keywords: GAN

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APA (6th Edition):

Khetan, A. K. (2018). PacGAN: The power of two samples in generative adversarial networks. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/101060

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Khetan, Ashish Kumar. “PacGAN: The power of two samples in generative adversarial networks.” 2018. Thesis, University of Illinois – Urbana-Champaign. Accessed June 24, 2019. http://hdl.handle.net/2142/101060.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Khetan, Ashish Kumar. “PacGAN: The power of two samples in generative adversarial networks.” 2018. Web. 24 Jun 2019.

Vancouver:

Khetan AK. PacGAN: The power of two samples in generative adversarial networks. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2018. [cited 2019 Jun 24]. Available from: http://hdl.handle.net/2142/101060.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Khetan AK. PacGAN: The power of two samples in generative adversarial networks. [Thesis]. University of Illinois – Urbana-Champaign; 2018. Available from: http://hdl.handle.net/2142/101060

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

2. Aroshvili, Giorgi. GaN HEMT and MMIC Design and Evaluation.

Degree: Technology and Built Environment, 2008, University of Gävle

  Gallium Nitride based devices due to their inherent material properties are considered as one of the most promising devices to realize high power, high… (more)

Subjects/Keywords: GaN; GaN HEMT; LoadPull

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APA (6th Edition):

Aroshvili, G. (2008). GaN HEMT and MMIC Design and Evaluation. (Thesis). University of Gävle. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-3085

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Aroshvili, Giorgi. “GaN HEMT and MMIC Design and Evaluation.” 2008. Thesis, University of Gävle. Accessed June 24, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-3085.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Aroshvili, Giorgi. “GaN HEMT and MMIC Design and Evaluation.” 2008. Web. 24 Jun 2019.

Vancouver:

Aroshvili G. GaN HEMT and MMIC Design and Evaluation. [Internet] [Thesis]. University of Gävle; 2008. [cited 2019 Jun 24]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-3085.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Aroshvili G. GaN HEMT and MMIC Design and Evaluation. [Thesis]. University of Gävle; 2008. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:hig:diva-3085

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

3. Li, Yen-Chi. Temperature-dependent Hall measurement on undoped GaN epilayer.

Degree: Master, Physics, 2004, NSYSU

 The temperature-dependent Hall measurement was performed on the undoped GaN thin films grown by molecular beam epitaxy. The mobility and electron density were obtained by… (more)

Subjects/Keywords: GaN

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APA (6th Edition):

Li, Y. (2004). Temperature-dependent Hall measurement on undoped GaN epilayer. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712104-002217

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Yen-Chi. “Temperature-dependent Hall measurement on undoped GaN epilayer.” 2004. Thesis, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712104-002217.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Yen-Chi. “Temperature-dependent Hall measurement on undoped GaN epilayer.” 2004. Web. 24 Jun 2019.

Vancouver:

Li Y. Temperature-dependent Hall measurement on undoped GaN epilayer. [Internet] [Thesis]. NSYSU; 2004. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712104-002217.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li Y. Temperature-dependent Hall measurement on undoped GaN epilayer. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0712104-002217

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. Gosset, Nicolas. Procédés de gravure plasma pour la réalisation de structures verticales de diodes Schottky de nouvelle génération à base de GaN : Plasma etch processes for the realization of vertical structures for the new generation of GaN based Schottky diodes.

Degree: Docteur es, Physique des plasmas, 2016, Université d'Orléans

Le nitrure de gallium (GaN) est un semi-conducteur à grand gap dont les propriétés en font un bon candidat pour remplacer le Si dans le… (more)

Subjects/Keywords: GaN; Gravure; Plasma; GaN; Etching; Plasma; 621.044

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APA (6th Edition):

Gosset, N. (2016). Procédés de gravure plasma pour la réalisation de structures verticales de diodes Schottky de nouvelle génération à base de GaN : Plasma etch processes for the realization of vertical structures for the new generation of GaN based Schottky diodes. (Doctoral Dissertation). Université d'Orléans. Retrieved from http://www.theses.fr/2016ORLE2076

Chicago Manual of Style (16th Edition):

Gosset, Nicolas. “Procédés de gravure plasma pour la réalisation de structures verticales de diodes Schottky de nouvelle génération à base de GaN : Plasma etch processes for the realization of vertical structures for the new generation of GaN based Schottky diodes.” 2016. Doctoral Dissertation, Université d'Orléans. Accessed June 24, 2019. http://www.theses.fr/2016ORLE2076.

MLA Handbook (7th Edition):

Gosset, Nicolas. “Procédés de gravure plasma pour la réalisation de structures verticales de diodes Schottky de nouvelle génération à base de GaN : Plasma etch processes for the realization of vertical structures for the new generation of GaN based Schottky diodes.” 2016. Web. 24 Jun 2019.

Vancouver:

Gosset N. Procédés de gravure plasma pour la réalisation de structures verticales de diodes Schottky de nouvelle génération à base de GaN : Plasma etch processes for the realization of vertical structures for the new generation of GaN based Schottky diodes. [Internet] [Doctoral dissertation]. Université d'Orléans; 2016. [cited 2019 Jun 24]. Available from: http://www.theses.fr/2016ORLE2076.

Council of Science Editors:

Gosset N. Procédés de gravure plasma pour la réalisation de structures verticales de diodes Schottky de nouvelle génération à base de GaN : Plasma etch processes for the realization of vertical structures for the new generation of GaN based Schottky diodes. [Doctoral Dissertation]. Université d'Orléans; 2016. Available from: http://www.theses.fr/2016ORLE2076


University of Alberta

5. Bothe, Kyle M. Enhancement-mode Polar Sourced Gallium Nitride MOSFET.

Degree: PhD, Department of Electrical and Computer Engineering, 2015, University of Alberta

 All commercially fabricated Gallium Nitride (GaN) based power transistors to date have been heterojunction field effect transistors (HFET). The major down fall of this design… (more)

Subjects/Keywords: GaN MOSFET; PEALD

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APA (6th Edition):

Bothe, K. M. (2015). Enhancement-mode Polar Sourced Gallium Nitride MOSFET. (Doctoral Dissertation). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/cc534fp125

Chicago Manual of Style (16th Edition):

Bothe, Kyle M. “Enhancement-mode Polar Sourced Gallium Nitride MOSFET.” 2015. Doctoral Dissertation, University of Alberta. Accessed June 24, 2019. https://era.library.ualberta.ca/files/cc534fp125.

MLA Handbook (7th Edition):

Bothe, Kyle M. “Enhancement-mode Polar Sourced Gallium Nitride MOSFET.” 2015. Web. 24 Jun 2019.

Vancouver:

Bothe KM. Enhancement-mode Polar Sourced Gallium Nitride MOSFET. [Internet] [Doctoral dissertation]. University of Alberta; 2015. [cited 2019 Jun 24]. Available from: https://era.library.ualberta.ca/files/cc534fp125.

Council of Science Editors:

Bothe KM. Enhancement-mode Polar Sourced Gallium Nitride MOSFET. [Doctoral Dissertation]. University of Alberta; 2015. Available from: https://era.library.ualberta.ca/files/cc534fp125


NSYSU

6. Jhuang, Shin-Hong. Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE.

Degree: Master, Physics, 2009, NSYSU

 In this thesis, we study the magnetro-transport properties of Fe-doped AlxGa1-xN/GaN heterostructure with different Al content by Shubnikov-de Haas measurements. On the samples KTH640(x=0.294)ãKTH643(x=0.344)ãKTH642(x=0.390)ãKTH644 (x=0.397),… (more)

Subjects/Keywords: SdH; GaN; AlGaN

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APA (6th Edition):

Jhuang, S. (2009). Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jhuang, Shin-Hong. “Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE.” 2009. Thesis, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jhuang, Shin-Hong. “Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE.” 2009. Web. 24 Jun 2019.

Vancouver:

Jhuang S. Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jhuang S. Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

7. Hsieh, Chia-Ho. The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy.

Degree: PhD, Materials and Optoelectronic Science, 2009, NSYSU

 The group III nitride semiconductor grown on c-plane sapphire by radio frequency plasma assisted molecular beam epitaxy has been studied. To archive good quality GaN(more)

Subjects/Keywords: MBE; GaN; LiAlO2

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APA (6th Edition):

Hsieh, C. (2009). The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237

Chicago Manual of Style (16th Edition):

Hsieh, Chia-Ho. “The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy.” 2009. Doctoral Dissertation, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237.

MLA Handbook (7th Edition):

Hsieh, Chia-Ho. “The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy.” 2009. Web. 24 Jun 2019.

Vancouver:

Hsieh C. The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy. [Internet] [Doctoral dissertation]. NSYSU; 2009. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237.

Council of Science Editors:

Hsieh C. The study of growth and characterization of group III nitride semiconductor on Sapphire/LAO substrate by RF plasma-assisted molecular beam epitaxy. [Doctoral Dissertation]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0826109-165237


NSYSU

8. Lu, Jin-wei. Growth of free-standing non-polar GaN on LiAlO2 and LiGaO2 substrates by hydride vapor phase epitaxy.

Degree: Master, Materials and Optoelectronic Science, 2010, NSYSU

 Nonpolar free-standing GaN wafer were fabricated by using the hydride vapor phaseepitaxy(HVPE) technique on γ-LiAlO2 and (010) LiGaO2 substrates. Metallic gallium, NH3 and ultra-purity nitrogen… (more)

Subjects/Keywords: HVPE; nonpolar GaN

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APA (6th Edition):

Lu, J. (2010). Growth of free-standing non-polar GaN on LiAlO2 and LiGaO2 substrates by hydride vapor phase epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0808110-224308

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lu, Jin-wei. “Growth of free-standing non-polar GaN on LiAlO2 and LiGaO2 substrates by hydride vapor phase epitaxy.” 2010. Thesis, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0808110-224308.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lu, Jin-wei. “Growth of free-standing non-polar GaN on LiAlO2 and LiGaO2 substrates by hydride vapor phase epitaxy.” 2010. Web. 24 Jun 2019.

Vancouver:

Lu J. Growth of free-standing non-polar GaN on LiAlO2 and LiGaO2 substrates by hydride vapor phase epitaxy. [Internet] [Thesis]. NSYSU; 2010. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0808110-224308.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lu J. Growth of free-standing non-polar GaN on LiAlO2 and LiGaO2 substrates by hydride vapor phase epitaxy. [Thesis]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0808110-224308

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

9. Wu, Hao-Fei. Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE.

Degree: Master, Physics, 2011, NSYSU

 We invistegated the characteristic of GaN grown on LiAlO2 substrate by molecular epitaxy beam. First of all , we try to changed the growth ratio… (more)

Subjects/Keywords: MBE; LiAlO2; GaN

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APA (6th Edition):

Wu, H. (2011). Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Hao-Fei. “Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE.” 2011. Thesis, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Hao-Fei. “Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE.” 2011. Web. 24 Jun 2019.

Vancouver:

Wu H. Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE. [Internet] [Thesis]. NSYSU; 2011. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu H. Surface and structure characterizations of GaN grown on γ-LiAlO2 by PA-MBE. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0121111-215031

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

10. Hui HSiang, Wen. Growth of GaN thin films on Pattern Sapphire substrates by Hydride vapor phase epitaxy.

Degree: Master, Materials and Optoelectronic Science, 2014, NSYSU

 In this thesis, the growth of c-plane gallium nitride (GaN) epitaxial films on a patterned sapphire substrate (PSS) by hydride vapor phase epitaxy (HVPE). Gallium… (more)

Subjects/Keywords: GaN; HVPE; PSS

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APA (6th Edition):

Hui HSiang, W. (2014). Growth of GaN thin films on Pattern Sapphire substrates by Hydride vapor phase epitaxy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-092406

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hui HSiang, Wen. “Growth of GaN thin films on Pattern Sapphire substrates by Hydride vapor phase epitaxy.” 2014. Thesis, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-092406.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hui HSiang, Wen. “Growth of GaN thin films on Pattern Sapphire substrates by Hydride vapor phase epitaxy.” 2014. Web. 24 Jun 2019.

Vancouver:

Hui HSiang W. Growth of GaN thin films on Pattern Sapphire substrates by Hydride vapor phase epitaxy. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-092406.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hui HSiang W. Growth of GaN thin films on Pattern Sapphire substrates by Hydride vapor phase epitaxy. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0527114-092406

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

11. Barry, Edwin Allen. Terahertz Generation in Submicron Nitride-based Semiconductor Devices.

Degree: PhD, Electrical Engineering, 2009, North Carolina State University

 In this thesis, the electron dynamics and transport properties of III-nitride semiconductors materials and devices are studied, with an emphasis on their application to the… (more)

Subjects/Keywords: GaN; nitride; THz

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APA (6th Edition):

Barry, E. A. (2009). Terahertz Generation in Submicron Nitride-based Semiconductor Devices. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3566

Chicago Manual of Style (16th Edition):

Barry, Edwin Allen. “Terahertz Generation in Submicron Nitride-based Semiconductor Devices.” 2009. Doctoral Dissertation, North Carolina State University. Accessed June 24, 2019. http://www.lib.ncsu.edu/resolver/1840.16/3566.

MLA Handbook (7th Edition):

Barry, Edwin Allen. “Terahertz Generation in Submicron Nitride-based Semiconductor Devices.” 2009. Web. 24 Jun 2019.

Vancouver:

Barry EA. Terahertz Generation in Submicron Nitride-based Semiconductor Devices. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2019 Jun 24]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3566.

Council of Science Editors:

Barry EA. Terahertz Generation in Submicron Nitride-based Semiconductor Devices. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3566


University of Notre Dame

12. Jingshan Wang. High-Power Vertical GaN Electronic Devices Formed by Epitaxial Lift-Off</h1>.

Degree: PhD, Electrical Engineering, 2018, University of Notre Dame

GaN and related materials have become one of the most promising material systems for high efficiency power electronics due to their unique material properties,… (more)

Subjects/Keywords: GaN power electronics

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APA (6th Edition):

Wang, J. (2018). High-Power Vertical GaN Electronic Devices Formed by Epitaxial Lift-Off</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/ng451g08h0n

Chicago Manual of Style (16th Edition):

Wang, Jingshan. “High-Power Vertical GaN Electronic Devices Formed by Epitaxial Lift-Off</h1>.” 2018. Doctoral Dissertation, University of Notre Dame. Accessed June 24, 2019. https://curate.nd.edu/show/ng451g08h0n.

MLA Handbook (7th Edition):

Wang, Jingshan. “High-Power Vertical GaN Electronic Devices Formed by Epitaxial Lift-Off</h1>.” 2018. Web. 24 Jun 2019.

Vancouver:

Wang J. High-Power Vertical GaN Electronic Devices Formed by Epitaxial Lift-Off</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2018. [cited 2019 Jun 24]. Available from: https://curate.nd.edu/show/ng451g08h0n.

Council of Science Editors:

Wang J. High-Power Vertical GaN Electronic Devices Formed by Epitaxial Lift-Off</h1>. [Doctoral Dissertation]. University of Notre Dame; 2018. Available from: https://curate.nd.edu/show/ng451g08h0n


University of Notre Dame

13. Guowang Li. MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>.

Degree: MSin Electrical Engineering, Electrical Engineering, 2010, University of Notre Dame

  III-V nitride semiconductors have exhibited a promising technology platform for optoelectronic and electronic devices. For low Al composition (<40 %) AlGaN/GaN high-electron mobility transistors… (more)

Subjects/Keywords: GaN; MBE; Transistor

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APA (6th Edition):

Li, G. (2010). MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/7w62f76443f

Chicago Manual of Style (16th Edition):

Li, Guowang. “MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>.” 2010. Masters Thesis, University of Notre Dame. Accessed June 24, 2019. https://curate.nd.edu/show/7w62f76443f.

MLA Handbook (7th Edition):

Li, Guowang. “MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>.” 2010. Web. 24 Jun 2019.

Vancouver:

Li G. MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>. [Internet] [Masters thesis]. University of Notre Dame; 2010. [cited 2019 Jun 24]. Available from: https://curate.nd.edu/show/7w62f76443f.

Council of Science Editors:

Li G. MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>. [Masters Thesis]. University of Notre Dame; 2010. Available from: https://curate.nd.edu/show/7w62f76443f


NSYSU

14. Wang, Ying-Chieh. Study of GaN and its alloys for spintronics and optoelectronics.

Degree: PhD, Physics, 2015, NSYSU

 The potential of wurtzite GaN and it alloys for applying in the spintronics and optoelectronics has been discussed in this dissertation. For the application of… (more)

Subjects/Keywords: MBE; GaN microdisk; spin-splitting; nano-device; AlGaN/GaN heterostructure; GaN

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APA (6th Edition):

Wang, Y. (2015). Study of GaN and its alloys for spintronics and optoelectronics. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134

Chicago Manual of Style (16th Edition):

Wang, Ying-Chieh. “Study of GaN and its alloys for spintronics and optoelectronics.” 2015. Doctoral Dissertation, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134.

MLA Handbook (7th Edition):

Wang, Ying-Chieh. “Study of GaN and its alloys for spintronics and optoelectronics.” 2015. Web. 24 Jun 2019.

Vancouver:

Wang Y. Study of GaN and its alloys for spintronics and optoelectronics. [Internet] [Doctoral dissertation]. NSYSU; 2015. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134.

Council of Science Editors:

Wang Y. Study of GaN and its alloys for spintronics and optoelectronics. [Doctoral Dissertation]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134


University of Southern California

15. Yeh, Ting-Wei. GaN nanostructures grown by selective area growth for solid-state lighting.

Degree: PhD, Materials Science, 2013, University of Southern California

 There are several challenges for the InGaN-based light emitting diodes (LEDs) to be used for lighting, such as high dislocation density resulting from the lattice… (more)

Subjects/Keywords: GaN nanorod; GaN nanosheet; GaN nanostructures; LED; nonpolar

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APA (6th Edition):

Yeh, T. (2013). GaN nanostructures grown by selective area growth for solid-state lighting. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/118807/rec/2955

Chicago Manual of Style (16th Edition):

Yeh, Ting-Wei. “GaN nanostructures grown by selective area growth for solid-state lighting.” 2013. Doctoral Dissertation, University of Southern California. Accessed June 24, 2019. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/118807/rec/2955.

MLA Handbook (7th Edition):

Yeh, Ting-Wei. “GaN nanostructures grown by selective area growth for solid-state lighting.” 2013. Web. 24 Jun 2019.

Vancouver:

Yeh T. GaN nanostructures grown by selective area growth for solid-state lighting. [Internet] [Doctoral dissertation]. University of Southern California; 2013. [cited 2019 Jun 24]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/118807/rec/2955.

Council of Science Editors:

Yeh T. GaN nanostructures grown by selective area growth for solid-state lighting. [Doctoral Dissertation]. University of Southern California; 2013. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/118807/rec/2955

16. Greco, Giuseppe. AlGaN/GaN heterostructures for enhancement mode transistors.

Degree: 2013, Università degli Studi di Catania

 Today the continuous increase of electric power demand is in our society a global concern. Hence, the reduction of the energy consumption has become the… (more)

Subjects/Keywords: Area 02 - Scienze fisiche; GaN,AlGaN/GaN heterostructures,HEMT,2DEG, p-GaN contacts

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APA (6th Edition):

Greco, G. (2013). AlGaN/GaN heterostructures for enhancement mode transistors. (Thesis). Università degli Studi di Catania. Retrieved from http://hdl.handle.net/10761/1347

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Greco, Giuseppe. “AlGaN/GaN heterostructures for enhancement mode transistors.” 2013. Thesis, Università degli Studi di Catania. Accessed June 24, 2019. http://hdl.handle.net/10761/1347.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Greco, Giuseppe. “AlGaN/GaN heterostructures for enhancement mode transistors.” 2013. Web. 24 Jun 2019.

Vancouver:

Greco G. AlGaN/GaN heterostructures for enhancement mode transistors. [Internet] [Thesis]. Università degli Studi di Catania; 2013. [cited 2019 Jun 24]. Available from: http://hdl.handle.net/10761/1347.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Greco G. AlGaN/GaN heterostructures for enhancement mode transistors. [Thesis]. Università degli Studi di Catania; 2013. Available from: http://hdl.handle.net/10761/1347

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

17. Shrestha, Shreetu. Transient Simulation of GaN HEMTs.

Degree: 2013, Chalmers University of Technology

 Subthreshold drain leakage can be suppressed in GaN HEMTs by intentionally doping the GaN buffer with deep acceptor dopants such as C and Fe or… (more)

Subjects/Keywords: GaN/AlGaN; HEMT; current collapse

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APA (6th Edition):

Shrestha, S. (2013). Transient Simulation of GaN HEMTs. (Thesis). Chalmers University of Technology. Retrieved from http://studentarbeten.chalmers.se/publication/179391-transient-simulation-of-gan-hemts

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Shrestha, Shreetu. “Transient Simulation of GaN HEMTs.” 2013. Thesis, Chalmers University of Technology. Accessed June 24, 2019. http://studentarbeten.chalmers.se/publication/179391-transient-simulation-of-gan-hemts.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Shrestha, Shreetu. “Transient Simulation of GaN HEMTs.” 2013. Web. 24 Jun 2019.

Vancouver:

Shrestha S. Transient Simulation of GaN HEMTs. [Internet] [Thesis]. Chalmers University of Technology; 2013. [cited 2019 Jun 24]. Available from: http://studentarbeten.chalmers.se/publication/179391-transient-simulation-of-gan-hemts.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Shrestha S. Transient Simulation of GaN HEMTs. [Thesis]. Chalmers University of Technology; 2013. Available from: http://studentarbeten.chalmers.se/publication/179391-transient-simulation-of-gan-hemts

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

18. Avcu, Mustafa. Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench.

Degree: Docteur es, Electronique des Hautes Fréquences, Photonique et Systèmes, 2014, Limoges

Ce document porte sur le développement d’un nouveau banc de mesure pour la caractérisation de l’impédance thermique des HEMTs GaN. Le banc développé repose sur… (more)

Subjects/Keywords: Méthode 3ω; Impédance thermique; HEMT; AlGaN/GaN; InAlN/GaN; 3ω method; Thermal impedance; HEMT; AlGaN/GaN; InAlN/GaN; 621.381

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APA (6th Edition):

Avcu, M. (2014). Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench. (Doctoral Dissertation). Limoges. Retrieved from http://www.theses.fr/2014LIMO0048

Chicago Manual of Style (16th Edition):

Avcu, Mustafa. “Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench.” 2014. Doctoral Dissertation, Limoges. Accessed June 24, 2019. http://www.theses.fr/2014LIMO0048.

MLA Handbook (7th Edition):

Avcu, Mustafa. “Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench.” 2014. Web. 24 Jun 2019.

Vancouver:

Avcu M. Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench. [Internet] [Doctoral dissertation]. Limoges; 2014. [cited 2019 Jun 24]. Available from: http://www.theses.fr/2014LIMO0048.

Council of Science Editors:

Avcu M. Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench. [Doctoral Dissertation]. Limoges; 2014. Available from: http://www.theses.fr/2014LIMO0048


University of Oxford

19. Holmes, Mark J. Optical spectroscopy of wide bandgap semiconductor nanoscale structures.

Degree: 2011, University of Oxford

 The optical properties of GaN nanocolumn structures containing InGaN quantum disks are investigated by optical microphotoluminescence spectroscopy using pulsed lasers, and cathodo- luminescence. The results… (more)

Subjects/Keywords: 530.41; Nanomaterials : GaN : nanocolumn

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APA (6th Edition):

Holmes, M. J. (2011). Optical spectroscopy of wide bandgap semiconductor nanoscale structures. (Doctoral Dissertation). University of Oxford. Retrieved from http://ora.ox.ac.uk/objects/uuid:b8318654-dd3a-4875-8a8e-1e57d877b0f2 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.555374

Chicago Manual of Style (16th Edition):

Holmes, Mark J. “Optical spectroscopy of wide bandgap semiconductor nanoscale structures.” 2011. Doctoral Dissertation, University of Oxford. Accessed June 24, 2019. http://ora.ox.ac.uk/objects/uuid:b8318654-dd3a-4875-8a8e-1e57d877b0f2 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.555374.

MLA Handbook (7th Edition):

Holmes, Mark J. “Optical spectroscopy of wide bandgap semiconductor nanoscale structures.” 2011. Web. 24 Jun 2019.

Vancouver:

Holmes MJ. Optical spectroscopy of wide bandgap semiconductor nanoscale structures. [Internet] [Doctoral dissertation]. University of Oxford; 2011. [cited 2019 Jun 24]. Available from: http://ora.ox.ac.uk/objects/uuid:b8318654-dd3a-4875-8a8e-1e57d877b0f2 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.555374.

Council of Science Editors:

Holmes MJ. Optical spectroscopy of wide bandgap semiconductor nanoscale structures. [Doctoral Dissertation]. University of Oxford; 2011. Available from: http://ora.ox.ac.uk/objects/uuid:b8318654-dd3a-4875-8a8e-1e57d877b0f2 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.555374


NSYSU

20. Kuo, Wen-Chang. Processes and Characteristic Analysis of GaN MOS Structure.

Degree: Master, Physics, 2000, NSYSU

 In this thesis we reveal that the Ohmic contacts of n-type and p-type GaN are obtained by the method of thermal evaporation. For different types… (more)

Subjects/Keywords: GaN; MOS

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APA (6th Edition):

Kuo, W. (2000). Processes and Characteristic Analysis of GaN MOS Structure. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620100-161951

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kuo, Wen-Chang. “Processes and Characteristic Analysis of GaN MOS Structure.” 2000. Thesis, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620100-161951.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kuo, Wen-Chang. “Processes and Characteristic Analysis of GaN MOS Structure.” 2000. Web. 24 Jun 2019.

Vancouver:

Kuo W. Processes and Characteristic Analysis of GaN MOS Structure. [Internet] [Thesis]. NSYSU; 2000. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620100-161951.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kuo W. Processes and Characteristic Analysis of GaN MOS Structure. [Thesis]. NSYSU; 2000. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0620100-161951

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

21. Hsin Lin, Wei. Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field.

Degree: Master, Physics, 2008, NSYSU

 We have fabricated the device of High Electron Mobility Transistor(HEMT) on Al0.18Ga0.82N/GaN heterostructures. The mobility of 2DEG of the AlGaN/GaN is 9328 cm2/Vs and carrier… (more)

Subjects/Keywords: SdH; AlGaN; GaN; 2DEG

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APA (6th Edition):

Hsin Lin, W. (2008). Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsin Lin, Wei. “Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field.” 2008. Thesis, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsin Lin, Wei. “Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field.” 2008. Web. 24 Jun 2019.

Vancouver:

Hsin Lin W. Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsin Lin W. Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

22. Wang, Ying-chieh. Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field.

Degree: Master, Physics, 2009, NSYSU

 We discussed the electronic properties in AlxGa1-xN/GaN heterostructures. There are six different samples of AlxGa1-xN/GaN we prepared for this experiment, three of them are undoped… (more)

Subjects/Keywords: Hall effect; 2DEG; GaN; SdH

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APA (6th Edition):

Wang, Y. (2009). Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716109-105054

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Ying-chieh. “Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field.” 2009. Thesis, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716109-105054.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Ying-chieh. “Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field.” 2009. Web. 24 Jun 2019.

Vancouver:

Wang Y. Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716109-105054.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang Y. Study of Undoped and Fe-doped AlGaN/GaN Grown by MOVPE at Low Temperature and High Magnetic Field. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716109-105054

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

23. Hu, Chia-hsuan. Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE.

Degree: Master, Physics, 2009, NSYSU

 We invistegated the characteristic of GaN nanostructure grown onγ-LiAlO2 substrate by molecular epitaxy beam. We observed the c-plane GaN pillar and M-plane GaN terraces assembled… (more)

Subjects/Keywords: c-plane; GaN; M-plane

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APA (6th Edition):

Hu, C. (2009). Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724109-041248

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hu, Chia-hsuan. “Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE.” 2009. Thesis, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724109-041248.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hu, Chia-hsuan. “Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE.” 2009. Web. 24 Jun 2019.

Vancouver:

Hu C. Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724109-041248.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hu C. Surface characterizations of GaN nanostructure grown on γ- LiAlO_2 substrate by plasma-assisted MBE. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724109-041248

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

24. Chen, Yu-hao. Analysis of Mg-doped GaN thin film grown by PAMBE.

Degree: Master, Physics, 2010, NSYSU

 We grew Mg-doped of GaN on GaN template by plasma-assisted molecular beam epitaxy (PAMBE) and measured these samples by Hall measurement, I-V curve measurement, PL,… (more)

Subjects/Keywords: Mg-doped; MBE; GaN

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APA (6th Edition):

Chen, Y. (2010). Analysis of Mg-doped GaN thin film grown by PAMBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Yu-hao. “Analysis of Mg-doped GaN thin film grown by PAMBE.” 2010. Thesis, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Yu-hao. “Analysis of Mg-doped GaN thin film grown by PAMBE.” 2010. Web. 24 Jun 2019.

Vancouver:

Chen Y. Analysis of Mg-doped GaN thin film grown by PAMBE. [Internet] [Thesis]. NSYSU; 2010. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Analysis of Mg-doped GaN thin film grown by PAMBE. [Thesis]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0803110-143146

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

25. PANG, WEN-YUAN. Growth and characterization of GaN-based thin film grown by plasma-assisted molecular beam epitaxy for spintronics and optoelectronics application.

Degree: PhD, Physics, 2013, NSYSU

 In this dissertation, we studied the growth and characterization of GaN-based thin film grown by plasma-assisted molecular beam epitaxy for spintronics and optoelectronics application. In… (more)

Subjects/Keywords: zinc-blende GaN; GaN microdisk; quantum-ring interferometer; InGaN/GaN multiple quantum wells; semi-polar; AlGaN/GaN HEMT; Molecular Beam Epitaxy

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APA (6th Edition):

PANG, W. (2013). Growth and characterization of GaN-based thin film grown by plasma-assisted molecular beam epitaxy for spintronics and optoelectronics application. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706113-013907

Chicago Manual of Style (16th Edition):

PANG, WEN-YUAN. “Growth and characterization of GaN-based thin film grown by plasma-assisted molecular beam epitaxy for spintronics and optoelectronics application.” 2013. Doctoral Dissertation, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706113-013907.

MLA Handbook (7th Edition):

PANG, WEN-YUAN. “Growth and characterization of GaN-based thin film grown by plasma-assisted molecular beam epitaxy for spintronics and optoelectronics application.” 2013. Web. 24 Jun 2019.

Vancouver:

PANG W. Growth and characterization of GaN-based thin film grown by plasma-assisted molecular beam epitaxy for spintronics and optoelectronics application. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706113-013907.

Council of Science Editors:

PANG W. Growth and characterization of GaN-based thin film grown by plasma-assisted molecular beam epitaxy for spintronics and optoelectronics application. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706113-013907


NSYSU

26. Chen, Zong-Ting. Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE.

Degree: Master, Physics, 2013, NSYSU

 We have grown InGaN/GaN quantum wells (QWs) by plasma-assisted molecular beam epitaxy(PA MBE) for the application light-emitting diodes (LEDs). In order to evaluate the optical… (more)

Subjects/Keywords: Qantum well; GaN; InGaN; MBE

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, Z. (2013). Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Zong-Ting. “Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE.” 2013. Thesis, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Zong-Ting. “Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE.” 2013. Web. 24 Jun 2019.

Vancouver:

Chen Z. Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Z. Study of high Indium composition InGaN/GaN quantum wells grown on GaN-template by plasma-assisted MBE. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724113-215922

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

27. Yu, Cheng-Chang. Photoluminescence study of CuInSe2/GaN and CuInSe2/InN.

Degree: Master, Physics, 2016, NSYSU

 We use a Ti: Sapphire laser to study the photoluminescence (PL) spectral of CuInSe2/GaN and CuInSe2/InN. The sample we studied was made by MBE (molecular… (more)

Subjects/Keywords: GaN; Photoluminescence; InN; CuInSe2

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yu, C. (2016). Photoluminescence study of CuInSe2/GaN and CuInSe2/InN. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0806116-151804

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yu, Cheng-Chang. “Photoluminescence study of CuInSe2/GaN and CuInSe2/InN.” 2016. Thesis, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0806116-151804.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yu, Cheng-Chang. “Photoluminescence study of CuInSe2/GaN and CuInSe2/InN.” 2016. Web. 24 Jun 2019.

Vancouver:

Yu C. Photoluminescence study of CuInSe2/GaN and CuInSe2/InN. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0806116-151804.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yu C. Photoluminescence study of CuInSe2/GaN and CuInSe2/InN. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0806116-151804

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

28. Wang, Cin-Huei. The formation of m-plane (10-10) GaN on LiGaO2 substrates via diffusion with NH3.

Degree: Master, Materials and Optoelectronic Science, 2012, NSYSU

 ããIn this thesis, the formation of m-plane (10-10) Gallium nitride (GaN) on the surface of a-plane (100) lithium gallate (LiGaO2, LGO) substrates via nitridation with… (more)

Subjects/Keywords: Nanoporous.; GaN; LiGaO2; NH3; Nitridation

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APA (6th Edition):

Wang, C. (2012). The formation of m-plane (10-10) GaN on LiGaO2 substrates via diffusion with NH3. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724112-030207

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Cin-Huei. “The formation of m-plane (10-10) GaN on LiGaO2 substrates via diffusion with NH3.” 2012. Thesis, NSYSU. Accessed June 24, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724112-030207.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Cin-Huei. “The formation of m-plane (10-10) GaN on LiGaO2 substrates via diffusion with NH3.” 2012. Web. 24 Jun 2019.

Vancouver:

Wang C. The formation of m-plane (10-10) GaN on LiGaO2 substrates via diffusion with NH3. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 Jun 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724112-030207.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang C. The formation of m-plane (10-10) GaN on LiGaO2 substrates via diffusion with NH3. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724112-030207

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

29. Bonanno, Peter L. Nano-selective-area growth of group III-nitrides on silicon and conventional substrates.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

 We developed and evaluated NSAG techniques for Group III-Nitrides as a way to mitigate the various difficulties with this material system (high defect density, threading… (more)

Subjects/Keywords: GaN; NSAG; InGaN; BGaN

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bonanno, P. L. (2016). Nano-selective-area growth of group III-nitrides on silicon and conventional substrates. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/55574

Chicago Manual of Style (16th Edition):

Bonanno, Peter L. “Nano-selective-area growth of group III-nitrides on silicon and conventional substrates.” 2016. Doctoral Dissertation, Georgia Tech. Accessed June 24, 2019. http://hdl.handle.net/1853/55574.

MLA Handbook (7th Edition):

Bonanno, Peter L. “Nano-selective-area growth of group III-nitrides on silicon and conventional substrates.” 2016. Web. 24 Jun 2019.

Vancouver:

Bonanno PL. Nano-selective-area growth of group III-nitrides on silicon and conventional substrates. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Jun 24]. Available from: http://hdl.handle.net/1853/55574.

Council of Science Editors:

Bonanno PL. Nano-selective-area growth of group III-nitrides on silicon and conventional substrates. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/55574


Penn State University

30. Burke, Robert. MOCVD Growth and Characterization of Gallium Nitride and Gallium Antimonide Nanowires.

Degree: PhD, Materials Science and Engineering, 2008, Penn State University

 Group-III nitride and group-III antimonide thin films have been used for years in optoelectronic, high-speed applications, and high power/high temperature applications such as light emitting… (more)

Subjects/Keywords: GaSb; nanowires; MOCVD; GaN

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Burke, R. (2008). MOCVD Growth and Characterization of Gallium Nitride and Gallium Antimonide Nanowires. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/9059

Chicago Manual of Style (16th Edition):

Burke, Robert. “MOCVD Growth and Characterization of Gallium Nitride and Gallium Antimonide Nanowires.” 2008. Doctoral Dissertation, Penn State University. Accessed June 24, 2019. https://etda.libraries.psu.edu/catalog/9059.

MLA Handbook (7th Edition):

Burke, Robert. “MOCVD Growth and Characterization of Gallium Nitride and Gallium Antimonide Nanowires.” 2008. Web. 24 Jun 2019.

Vancouver:

Burke R. MOCVD Growth and Characterization of Gallium Nitride and Gallium Antimonide Nanowires. [Internet] [Doctoral dissertation]. Penn State University; 2008. [cited 2019 Jun 24]. Available from: https://etda.libraries.psu.edu/catalog/9059.

Council of Science Editors:

Burke R. MOCVD Growth and Characterization of Gallium Nitride and Gallium Antimonide Nanowires. [Doctoral Dissertation]. Penn State University; 2008. Available from: https://etda.libraries.psu.edu/catalog/9059

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