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You searched for subject:(GaN LED). Showing records 1 – 30 of 38 total matches.

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1. Olivier, François. Etude des caractéristiques électro-optiques de micro-LED GaN pour application aux micro-écrans haute-luminance : Study of electro-optical characteristics of GaN micro-LEDs for high-brightness-micro-displays.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Grenoble Alpes

Le domaine des écrans est en pleine mutation. De nouvelles technologies d’écrans (principalement LCD et OLED) ont remplacé l’écran à tube cathodique du XXème siècle… (more)

Subjects/Keywords: Écran; Micro-LED; GaN; Display; Micro-LED; GaN; 620

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APA (6th Edition):

Olivier, F. (2018). Etude des caractéristiques électro-optiques de micro-LED GaN pour application aux micro-écrans haute-luminance : Study of electro-optical characteristics of GaN micro-LEDs for high-brightness-micro-displays. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAT019

Chicago Manual of Style (16th Edition):

Olivier, François. “Etude des caractéristiques électro-optiques de micro-LED GaN pour application aux micro-écrans haute-luminance : Study of electro-optical characteristics of GaN micro-LEDs for high-brightness-micro-displays.” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed March 18, 2019. http://www.theses.fr/2018GREAT019.

MLA Handbook (7th Edition):

Olivier, François. “Etude des caractéristiques électro-optiques de micro-LED GaN pour application aux micro-écrans haute-luminance : Study of electro-optical characteristics of GaN micro-LEDs for high-brightness-micro-displays.” 2018. Web. 18 Mar 2019.

Vancouver:

Olivier F. Etude des caractéristiques électro-optiques de micro-LED GaN pour application aux micro-écrans haute-luminance : Study of electro-optical characteristics of GaN micro-LEDs for high-brightness-micro-displays. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2019 Mar 18]. Available from: http://www.theses.fr/2018GREAT019.

Council of Science Editors:

Olivier F. Etude des caractéristiques électro-optiques de micro-LED GaN pour application aux micro-écrans haute-luminance : Study of electro-optical characteristics of GaN micro-LEDs for high-brightness-micro-displays. [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAT019

2. Guan, Nan. Nitride nanowire light-emitting diode : Diodes électroluminescentes à nanofils nitrures.

Degree: Docteur es, Electronique et Optoélectronique, Nano- et Microtechnologies, 2018, Paris Saclay

Les nanofils nitrures présentent des propriétés optoélectroniques extraordinaires et sont considérés comme des matériaux prometteurs pour des diodes électroluminescentes (LEDs), grâce à leur haute qualité… (more)

Subjects/Keywords: Nanofil; GaN; LED; Graphène; Flexible; Nanowire; GaN; LED; Graphene; Flexible

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APA (6th Edition):

Guan, N. (2018). Nitride nanowire light-emitting diode : Diodes électroluminescentes à nanofils nitrures. (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2018SACLS372

Chicago Manual of Style (16th Edition):

Guan, Nan. “Nitride nanowire light-emitting diode : Diodes électroluminescentes à nanofils nitrures.” 2018. Doctoral Dissertation, Paris Saclay. Accessed March 18, 2019. http://www.theses.fr/2018SACLS372.

MLA Handbook (7th Edition):

Guan, Nan. “Nitride nanowire light-emitting diode : Diodes électroluminescentes à nanofils nitrures.” 2018. Web. 18 Mar 2019.

Vancouver:

Guan N. Nitride nanowire light-emitting diode : Diodes électroluminescentes à nanofils nitrures. [Internet] [Doctoral dissertation]. Paris Saclay; 2018. [cited 2019 Mar 18]. Available from: http://www.theses.fr/2018SACLS372.

Council of Science Editors:

Guan N. Nitride nanowire light-emitting diode : Diodes électroluminescentes à nanofils nitrures. [Doctoral Dissertation]. Paris Saclay; 2018. Available from: http://www.theses.fr/2018SACLS372


University of Southern California

3. Yeh, Ting-Wei. GaN nanostructures grown by selective area growth for solid-state lighting.

Degree: PhD, Materials Science, 2013, University of Southern California

 There are several challenges for the InGaN-based light emitting diodes (LEDs) to be used for lighting, such as high dislocation density resulting from the lattice… (more)

Subjects/Keywords: GaN nanorod; GaN nanosheet; GaN nanostructures; LED; nonpolar

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APA (6th Edition):

Yeh, T. (2013). GaN nanostructures grown by selective area growth for solid-state lighting. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/118807/rec/2955

Chicago Manual of Style (16th Edition):

Yeh, Ting-Wei. “GaN nanostructures grown by selective area growth for solid-state lighting.” 2013. Doctoral Dissertation, University of Southern California. Accessed March 18, 2019. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/118807/rec/2955.

MLA Handbook (7th Edition):

Yeh, Ting-Wei. “GaN nanostructures grown by selective area growth for solid-state lighting.” 2013. Web. 18 Mar 2019.

Vancouver:

Yeh T. GaN nanostructures grown by selective area growth for solid-state lighting. [Internet] [Doctoral dissertation]. University of Southern California; 2013. [cited 2019 Mar 18]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/118807/rec/2955.

Council of Science Editors:

Yeh T. GaN nanostructures grown by selective area growth for solid-state lighting. [Doctoral Dissertation]. University of Southern California; 2013. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/118807/rec/2955

4. Mante, Nicolas. Hétéroépitaxie de GaN sur Si : De la nucléation à la relaxation des contraintes, étude par microscopie électronique en transmission : GaN heteroepitaxy on Si substrate : From nucleation to stress relaxation, transmission electron microscopy study.

Degree: Docteur es, Physique des matériaux, 2016, Grenoble Alpes

Ce travail est consacré à l'hétéroépitaxie de GaN sur substrat Si, étudié à l’échelle nanométrique par microscopie électronique en transmission. On étudie dans un premier… (more)

Subjects/Keywords: GaN; Microscopie; Dislocations; Contraintes; Heteroepitaxie; Led; GaN; Microscopy; Dislocations; Stress; Heteroepitaxy; Led; 530

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APA (6th Edition):

Mante, N. (2016). Hétéroépitaxie de GaN sur Si : De la nucléation à la relaxation des contraintes, étude par microscopie électronique en transmission : GaN heteroepitaxy on Si substrate : From nucleation to stress relaxation, transmission electron microscopy study. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2016GREAY078

Chicago Manual of Style (16th Edition):

Mante, Nicolas. “Hétéroépitaxie de GaN sur Si : De la nucléation à la relaxation des contraintes, étude par microscopie électronique en transmission : GaN heteroepitaxy on Si substrate : From nucleation to stress relaxation, transmission electron microscopy study.” 2016. Doctoral Dissertation, Grenoble Alpes. Accessed March 18, 2019. http://www.theses.fr/2016GREAY078.

MLA Handbook (7th Edition):

Mante, Nicolas. “Hétéroépitaxie de GaN sur Si : De la nucléation à la relaxation des contraintes, étude par microscopie électronique en transmission : GaN heteroepitaxy on Si substrate : From nucleation to stress relaxation, transmission electron microscopy study.” 2016. Web. 18 Mar 2019.

Vancouver:

Mante N. Hétéroépitaxie de GaN sur Si : De la nucléation à la relaxation des contraintes, étude par microscopie électronique en transmission : GaN heteroepitaxy on Si substrate : From nucleation to stress relaxation, transmission electron microscopy study. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2016. [cited 2019 Mar 18]. Available from: http://www.theses.fr/2016GREAY078.

Council of Science Editors:

Mante N. Hétéroépitaxie de GaN sur Si : De la nucléation à la relaxation des contraintes, étude par microscopie électronique en transmission : GaN heteroepitaxy on Si substrate : From nucleation to stress relaxation, transmission electron microscopy study. [Doctoral Dissertation]. Grenoble Alpes; 2016. Available from: http://www.theses.fr/2016GREAY078


Virginia Commonwealth University

5. Wu, Mo. AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates.

Degree: PhD, Engineering, 2012, Virginia Commonwealth University

GaN-based HFETs demonstrate ubiquitous high power and high frequency performance and attract tremendous research efforts. Even though significant advances have been achieved, there still exist… (more)

Subjects/Keywords: GaN HFET; LED; Hot phonon scattering; non-polar GaN; Engineering

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APA (6th Edition):

Wu, M. (2012). AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates. (Doctoral Dissertation). Virginia Commonwealth University. Retrieved from https://scholarscompass.vcu.edu/etd/403

Chicago Manual of Style (16th Edition):

Wu, Mo. “AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates.” 2012. Doctoral Dissertation, Virginia Commonwealth University. Accessed March 18, 2019. https://scholarscompass.vcu.edu/etd/403.

MLA Handbook (7th Edition):

Wu, Mo. “AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates.” 2012. Web. 18 Mar 2019.

Vancouver:

Wu M. AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates. [Internet] [Doctoral dissertation]. Virginia Commonwealth University; 2012. [cited 2019 Mar 18]. Available from: https://scholarscompass.vcu.edu/etd/403.

Council of Science Editors:

Wu M. AlGaN/GaN Dual Channel HFETs and Realization of GaN Devices on different substrates. [Doctoral Dissertation]. Virginia Commonwealth University; 2012. Available from: https://scholarscompass.vcu.edu/etd/403

6. Piccardo, Marco. Spectroscopie des processus photoélectriques dans les structures et dispositifs III-N : Spectroscopy of photoelectric processes in III-N structures and devices.

Degree: Docteur es, Physique, 2016, Paris Saclay

Malgré les rapides progrès technologiques dans les nitrures, les propriétés intrinsèques des alliages de nitrures et les processus physiques qui gouvernent la physique de ces… (more)

Subjects/Keywords: Diode électroluminescente; GaN; Spectroscopie électronique; Désordre d'alliage; Localisation; Led; GaN; Electron spectroscopy; Alloy disorder; Localization

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APA (6th Edition):

Piccardo, M. (2016). Spectroscopie des processus photoélectriques dans les structures et dispositifs III-N : Spectroscopy of photoelectric processes in III-N structures and devices. (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2016SACLX056

Chicago Manual of Style (16th Edition):

Piccardo, Marco. “Spectroscopie des processus photoélectriques dans les structures et dispositifs III-N : Spectroscopy of photoelectric processes in III-N structures and devices.” 2016. Doctoral Dissertation, Paris Saclay. Accessed March 18, 2019. http://www.theses.fr/2016SACLX056.

MLA Handbook (7th Edition):

Piccardo, Marco. “Spectroscopie des processus photoélectriques dans les structures et dispositifs III-N : Spectroscopy of photoelectric processes in III-N structures and devices.” 2016. Web. 18 Mar 2019.

Vancouver:

Piccardo M. Spectroscopie des processus photoélectriques dans les structures et dispositifs III-N : Spectroscopy of photoelectric processes in III-N structures and devices. [Internet] [Doctoral dissertation]. Paris Saclay; 2016. [cited 2019 Mar 18]. Available from: http://www.theses.fr/2016SACLX056.

Council of Science Editors:

Piccardo M. Spectroscopie des processus photoélectriques dans les structures et dispositifs III-N : Spectroscopy of photoelectric processes in III-N structures and devices. [Doctoral Dissertation]. Paris Saclay; 2016. Available from: http://www.theses.fr/2016SACLX056


NSYSU

7. Hu, Chia-hsuan. Study of InGaN/GaN quantum well structure grown by plasma-assisted molecular beam epitaxy for optoelectronics application.

Degree: PhD, Physics, 2016, NSYSU

 In this dissertation, we studied the growth and characterization of the GaN-based thin film grown by plasma-assisted molecular beam epitaxy for optoelectronics application. The MBE… (more)

Subjects/Keywords: high efficiency LED; InGaN/GaN quantum wells; micro disks; Molecular Beam Epitaxy; wurtzite GaN; zinc-blende GaN

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APA (6th Edition):

Hu, C. (2016). Study of InGaN/GaN quantum well structure grown by plasma-assisted molecular beam epitaxy for optoelectronics application. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626116-173159

Chicago Manual of Style (16th Edition):

Hu, Chia-hsuan. “Study of InGaN/GaN quantum well structure grown by plasma-assisted molecular beam epitaxy for optoelectronics application.” 2016. Doctoral Dissertation, NSYSU. Accessed March 18, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626116-173159.

MLA Handbook (7th Edition):

Hu, Chia-hsuan. “Study of InGaN/GaN quantum well structure grown by plasma-assisted molecular beam epitaxy for optoelectronics application.” 2016. Web. 18 Mar 2019.

Vancouver:

Hu C. Study of InGaN/GaN quantum well structure grown by plasma-assisted molecular beam epitaxy for optoelectronics application. [Internet] [Doctoral dissertation]. NSYSU; 2016. [cited 2019 Mar 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626116-173159.

Council of Science Editors:

Hu C. Study of InGaN/GaN quantum well structure grown by plasma-assisted molecular beam epitaxy for optoelectronics application. [Doctoral Dissertation]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0626116-173159


Virginia Commonwealth University

8. Okur, Serdal. Optical characterization of InGaN heterostructures for blue light emitters and vertical cavity lasers: Efficiency and recombination dynamics.

Degree: PhD, Engineering, 2014, Virginia Commonwealth University

  OPTICAL CHARACTERIZATION OF INGAN HETEROSTRUCTURES FOR BLUE LIGHT EMITTERS AND VERTICAL CAVITY LASERS: EFFICIENCY AND RECOMBINATION DYNAMICS By Serdal Okur, Ph.D. A thesis submitted… (more)

Subjects/Keywords: GaN; LED; VCSEL; InGaN; heterostructures; photoluminescence; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Okur, S. (2014). Optical characterization of InGaN heterostructures for blue light emitters and vertical cavity lasers: Efficiency and recombination dynamics. (Doctoral Dissertation). Virginia Commonwealth University. Retrieved from https://scholarscompass.vcu.edu/etd/3647

Chicago Manual of Style (16th Edition):

Okur, Serdal. “Optical characterization of InGaN heterostructures for blue light emitters and vertical cavity lasers: Efficiency and recombination dynamics.” 2014. Doctoral Dissertation, Virginia Commonwealth University. Accessed March 18, 2019. https://scholarscompass.vcu.edu/etd/3647.

MLA Handbook (7th Edition):

Okur, Serdal. “Optical characterization of InGaN heterostructures for blue light emitters and vertical cavity lasers: Efficiency and recombination dynamics.” 2014. Web. 18 Mar 2019.

Vancouver:

Okur S. Optical characterization of InGaN heterostructures for blue light emitters and vertical cavity lasers: Efficiency and recombination dynamics. [Internet] [Doctoral dissertation]. Virginia Commonwealth University; 2014. [cited 2019 Mar 18]. Available from: https://scholarscompass.vcu.edu/etd/3647.

Council of Science Editors:

Okur S. Optical characterization of InGaN heterostructures for blue light emitters and vertical cavity lasers: Efficiency and recombination dynamics. [Doctoral Dissertation]. Virginia Commonwealth University; 2014. Available from: https://scholarscompass.vcu.edu/etd/3647


NSYSU

9. Ho, Chen-Lin. Micro Structures on Gallium Nitride Light Emitting Diodes for Light Extraction Improvement.

Degree: PhD, Electrical Engineering, 2008, NSYSU

 In recent years, even though the light output of GaN-related LED continues to increase, the brightness is still low compared to conventional lighting systems and… (more)

Subjects/Keywords: light extraction efficiency; microlens; ZnO; GaN LED; SiO2

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APA (6th Edition):

Ho, C. (2008). Micro Structures on Gallium Nitride Light Emitting Diodes for Light Extraction Improvement. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715108-141932

Chicago Manual of Style (16th Edition):

Ho, Chen-Lin. “Micro Structures on Gallium Nitride Light Emitting Diodes for Light Extraction Improvement.” 2008. Doctoral Dissertation, NSYSU. Accessed March 18, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715108-141932.

MLA Handbook (7th Edition):

Ho, Chen-Lin. “Micro Structures on Gallium Nitride Light Emitting Diodes for Light Extraction Improvement.” 2008. Web. 18 Mar 2019.

Vancouver:

Ho C. Micro Structures on Gallium Nitride Light Emitting Diodes for Light Extraction Improvement. [Internet] [Doctoral dissertation]. NSYSU; 2008. [cited 2019 Mar 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715108-141932.

Council of Science Editors:

Ho C. Micro Structures on Gallium Nitride Light Emitting Diodes for Light Extraction Improvement. [Doctoral Dissertation]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715108-141932


NSYSU

10. Hsiao, Chin-Pin. Light Extraction Efficiency Improvement for GaN LEDs by Hydro-Thermal ZnO nanorods.

Degree: Master, Electro-Optical Engineering, 2013, NSYSU

 In the study, we investigated Zinc oxide nanorods by hydro-thermal contact to GaN blue LED and compared with AZO and Ni/Au thin film. Zinc nitrate… (more)

Subjects/Keywords: Transparent conducting film; surface roughness; Hydro-thermal; ZnO nanorods; GaN LED

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APA (6th Edition):

Hsiao, C. (2013). Light Extraction Efficiency Improvement for GaN LEDs by Hydro-Thermal ZnO nanorods. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0524113-023052

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsiao, Chin-Pin. “Light Extraction Efficiency Improvement for GaN LEDs by Hydro-Thermal ZnO nanorods.” 2013. Thesis, NSYSU. Accessed March 18, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0524113-023052.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsiao, Chin-Pin. “Light Extraction Efficiency Improvement for GaN LEDs by Hydro-Thermal ZnO nanorods.” 2013. Web. 18 Mar 2019.

Vancouver:

Hsiao C. Light Extraction Efficiency Improvement for GaN LEDs by Hydro-Thermal ZnO nanorods. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Mar 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0524113-023052.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsiao C. Light Extraction Efficiency Improvement for GaN LEDs by Hydro-Thermal ZnO nanorods. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0524113-023052

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

11. Sebkhi, Nordine. A study of efficiency droop of green light emitting diodes grown by metalorganic chemical vapor deposition.

Degree: MS, Electrical and Computer Engineering, 2011, Georgia Tech

 The objective of this thesis is to discuss the solutions investigated by AMDG (Advanced Materials and Devices Group) to reduce the "efficiency droop" effect that… (more)

Subjects/Keywords: Efficiency droop; GaN LED; MOCVD; Light emitting diodes

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APA (6th Edition):

Sebkhi, N. (2011). A study of efficiency droop of green light emitting diodes grown by metalorganic chemical vapor deposition. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/42856

Chicago Manual of Style (16th Edition):

Sebkhi, Nordine. “A study of efficiency droop of green light emitting diodes grown by metalorganic chemical vapor deposition.” 2011. Masters Thesis, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/42856.

MLA Handbook (7th Edition):

Sebkhi, Nordine. “A study of efficiency droop of green light emitting diodes grown by metalorganic chemical vapor deposition.” 2011. Web. 18 Mar 2019.

Vancouver:

Sebkhi N. A study of efficiency droop of green light emitting diodes grown by metalorganic chemical vapor deposition. [Internet] [Masters thesis]. Georgia Tech; 2011. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/42856.

Council of Science Editors:

Sebkhi N. A study of efficiency droop of green light emitting diodes grown by metalorganic chemical vapor deposition. [Masters Thesis]. Georgia Tech; 2011. Available from: http://hdl.handle.net/1853/42856


Penn State University

12. Noor Elahi, Asim. Electrical Studies on Schottky Barrier Diodes (SBDs) on Gallium Nitride (GaN).

Degree: MS, Electrical Engineering, 2015, Penn State University

 In this work, the thesis describes experiments made on both GaN Schottky barrier diodes (SBDs) and commercially available SiC Schottky barrier diodes (SBDs). The electrical… (more)

Subjects/Keywords: GaN SiC Schottky Barrier Diodes LED Electrical Characteristics Q

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APA (6th Edition):

Noor Elahi, A. (2015). Electrical Studies on Schottky Barrier Diodes (SBDs) on Gallium Nitride (GaN). (Masters Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/24955

Chicago Manual of Style (16th Edition):

Noor Elahi, Asim. “Electrical Studies on Schottky Barrier Diodes (SBDs) on Gallium Nitride (GaN).” 2015. Masters Thesis, Penn State University. Accessed March 18, 2019. https://etda.libraries.psu.edu/catalog/24955.

MLA Handbook (7th Edition):

Noor Elahi, Asim. “Electrical Studies on Schottky Barrier Diodes (SBDs) on Gallium Nitride (GaN).” 2015. Web. 18 Mar 2019.

Vancouver:

Noor Elahi A. Electrical Studies on Schottky Barrier Diodes (SBDs) on Gallium Nitride (GaN). [Internet] [Masters thesis]. Penn State University; 2015. [cited 2019 Mar 18]. Available from: https://etda.libraries.psu.edu/catalog/24955.

Council of Science Editors:

Noor Elahi A. Electrical Studies on Schottky Barrier Diodes (SBDs) on Gallium Nitride (GaN). [Masters Thesis]. Penn State University; 2015. Available from: https://etda.libraries.psu.edu/catalog/24955


North Carolina State University

13. Reed, Mason Jacob. Light Emitting Diodes and Dilute Magnetic Semiconductors in the III-Nitride Materials System.

Degree: PhD, Materials Science and Engineering, 2005, North Carolina State University

 The purpose of this research has been to produce novel light emitting diodes in the III-nitride materials system via metal organic vapor phase epitaxy. Three… (more)

Subjects/Keywords: LED; GaN; III-N; CVD

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APA (6th Edition):

Reed, M. J. (2005). Light Emitting Diodes and Dilute Magnetic Semiconductors in the III-Nitride Materials System. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5814

Chicago Manual of Style (16th Edition):

Reed, Mason Jacob. “Light Emitting Diodes and Dilute Magnetic Semiconductors in the III-Nitride Materials System.” 2005. Doctoral Dissertation, North Carolina State University. Accessed March 18, 2019. http://www.lib.ncsu.edu/resolver/1840.16/5814.

MLA Handbook (7th Edition):

Reed, Mason Jacob. “Light Emitting Diodes and Dilute Magnetic Semiconductors in the III-Nitride Materials System.” 2005. Web. 18 Mar 2019.

Vancouver:

Reed MJ. Light Emitting Diodes and Dilute Magnetic Semiconductors in the III-Nitride Materials System. [Internet] [Doctoral dissertation]. North Carolina State University; 2005. [cited 2019 Mar 18]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5814.

Council of Science Editors:

Reed MJ. Light Emitting Diodes and Dilute Magnetic Semiconductors in the III-Nitride Materials System. [Doctoral Dissertation]. North Carolina State University; 2005. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5814


Université de Bordeaux I

14. Baillot, Raphaël. Méthodologie d'analyse de défaillance pour l'évaluation de la fiabilité de diodes électroluminescentes GaN : Real time integrated circuits for recording and analyzing local field potentials : application to deep brain stimulation strategies for Parkinson’s disease.

Degree: Docteur es, Electronique, 2011, Université de Bordeaux I

Ce mémoire s'inscrit dans la construction d'une méthodologie d'analyse de défaillance pour l'évaluation de la fiabilité de diodes électroluminescentes, par une approche basée sur l'analyse… (more)

Subjects/Keywords: DELs GaN; Fiabilité; Huile silicone; Eclairage public; Polymérisation; Fluorescence; GaN-based LED; Reliability; Silicone oil; Solid-State Lighting; Polymerizatio; Fluorescence

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APA (6th Edition):

Baillot, R. (2011). Méthodologie d'analyse de défaillance pour l'évaluation de la fiabilité de diodes électroluminescentes GaN : Real time integrated circuits for recording and analyzing local field potentials : application to deep brain stimulation strategies for Parkinson’s disease. (Doctoral Dissertation). Université de Bordeaux I. Retrieved from http://www.theses.fr/2011BOR14364

Chicago Manual of Style (16th Edition):

Baillot, Raphaël. “Méthodologie d'analyse de défaillance pour l'évaluation de la fiabilité de diodes électroluminescentes GaN : Real time integrated circuits for recording and analyzing local field potentials : application to deep brain stimulation strategies for Parkinson’s disease.” 2011. Doctoral Dissertation, Université de Bordeaux I. Accessed March 18, 2019. http://www.theses.fr/2011BOR14364.

MLA Handbook (7th Edition):

Baillot, Raphaël. “Méthodologie d'analyse de défaillance pour l'évaluation de la fiabilité de diodes électroluminescentes GaN : Real time integrated circuits for recording and analyzing local field potentials : application to deep brain stimulation strategies for Parkinson’s disease.” 2011. Web. 18 Mar 2019.

Vancouver:

Baillot R. Méthodologie d'analyse de défaillance pour l'évaluation de la fiabilité de diodes électroluminescentes GaN : Real time integrated circuits for recording and analyzing local field potentials : application to deep brain stimulation strategies for Parkinson’s disease. [Internet] [Doctoral dissertation]. Université de Bordeaux I; 2011. [cited 2019 Mar 18]. Available from: http://www.theses.fr/2011BOR14364.

Council of Science Editors:

Baillot R. Méthodologie d'analyse de défaillance pour l'évaluation de la fiabilité de diodes électroluminescentes GaN : Real time integrated circuits for recording and analyzing local field potentials : application to deep brain stimulation strategies for Parkinson’s disease. [Doctoral Dissertation]. Université de Bordeaux I; 2011. Available from: http://www.theses.fr/2011BOR14364

15. Even, Armelle. Amélioration de l'incorporation d'indium dans zone active à base d'InGaN grâce à la croissance sur pseudo-substrat InGaN pour l'application à la DEL blanche monolithique : In incorporation improvement in InGaN based active region using InGaN pseudo substrate for monolithic white LED application.

Degree: Docteur es, Physique des matériaux, 2018, Grenoble Alpes

Les Diodes Electroluminescentes (DEL) à base de composés III-nitrures sont très efficaces pour les longueurs d’ondes correspondant à la couleur bleue. Ces DELs bleues sont… (more)

Subjects/Keywords: DEL; GaN; InGaN; Monolithic emission de lumière blanche; Semi-Conducteurs; LED; GaN; InGaN; Monolithic emission of white light; Semi-Conductors; 530

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APA (6th Edition):

Even, A. (2018). Amélioration de l'incorporation d'indium dans zone active à base d'InGaN grâce à la croissance sur pseudo-substrat InGaN pour l'application à la DEL blanche monolithique : In incorporation improvement in InGaN based active region using InGaN pseudo substrate for monolithic white LED application. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAY008

Chicago Manual of Style (16th Edition):

Even, Armelle. “Amélioration de l'incorporation d'indium dans zone active à base d'InGaN grâce à la croissance sur pseudo-substrat InGaN pour l'application à la DEL blanche monolithique : In incorporation improvement in InGaN based active region using InGaN pseudo substrate for monolithic white LED application.” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed March 18, 2019. http://www.theses.fr/2018GREAY008.

MLA Handbook (7th Edition):

Even, Armelle. “Amélioration de l'incorporation d'indium dans zone active à base d'InGaN grâce à la croissance sur pseudo-substrat InGaN pour l'application à la DEL blanche monolithique : In incorporation improvement in InGaN based active region using InGaN pseudo substrate for monolithic white LED application.” 2018. Web. 18 Mar 2019.

Vancouver:

Even A. Amélioration de l'incorporation d'indium dans zone active à base d'InGaN grâce à la croissance sur pseudo-substrat InGaN pour l'application à la DEL blanche monolithique : In incorporation improvement in InGaN based active region using InGaN pseudo substrate for monolithic white LED application. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2019 Mar 18]. Available from: http://www.theses.fr/2018GREAY008.

Council of Science Editors:

Even A. Amélioration de l'incorporation d'indium dans zone active à base d'InGaN grâce à la croissance sur pseudo-substrat InGaN pour l'application à la DEL blanche monolithique : In incorporation improvement in InGaN based active region using InGaN pseudo substrate for monolithic white LED application. [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAY008


Georgia Tech

16. Zaidi, Tahir. Ferromagnetic and multiferroic thin films aimed towards optoelectronic and spintronic applications.

Degree: PhD, Electrical and Computer Engineering, 2010, Georgia Tech

 This work targeted the growth of gadolinium (Gd)-doped gallium nitride (GaN) thin films (Ga₁₋ₓGdₓN) by metal organic chemical vapor deposition (MOCVD). Characterization and evaluation of… (more)

Subjects/Keywords: Ferromagnetic; Thin films; Gadolinium; GaN; Spintronic; Spin-LED; LED; Ferroelectric thin films; Ferroelectric devices; Optoelectronic devices; Spintronics; Gadolinium; Gallium nitride

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APA (6th Edition):

Zaidi, T. (2010). Ferromagnetic and multiferroic thin films aimed towards optoelectronic and spintronic applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/41110

Chicago Manual of Style (16th Edition):

Zaidi, Tahir. “Ferromagnetic and multiferroic thin films aimed towards optoelectronic and spintronic applications.” 2010. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/41110.

MLA Handbook (7th Edition):

Zaidi, Tahir. “Ferromagnetic and multiferroic thin films aimed towards optoelectronic and spintronic applications.” 2010. Web. 18 Mar 2019.

Vancouver:

Zaidi T. Ferromagnetic and multiferroic thin films aimed towards optoelectronic and spintronic applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2010. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/41110.

Council of Science Editors:

Zaidi T. Ferromagnetic and multiferroic thin films aimed towards optoelectronic and spintronic applications. [Doctoral Dissertation]. Georgia Tech; 2010. Available from: http://hdl.handle.net/1853/41110

17. Tchoulfian, Pierre. Propriétés électriques, optiques et électro-optiques de microfils GaN pour la réalisation de LEDs : Electrical, optical, and electro-optical properties of GaN microwires for the fabrication of LEDs.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Grenoble Alpes

Ce travail de thèse porte sur la caractérisation à l'échelle du fil unique des propriétés de fils GaN de taille micronique (µfil), en vue du… (more)

Subjects/Keywords: Μ fils; GaN; Jonction p-n coeur-coquille; Dopage; Mobilité; LED; EBIC; Μ wire; GaN; Core-shell p-n junction; Doping; Mobility; LED; EBIC; 620

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APA (6th Edition):

Tchoulfian, P. (2015). Propriétés électriques, optiques et électro-optiques de microfils GaN pour la réalisation de LEDs : Electrical, optical, and electro-optical properties of GaN microwires for the fabrication of LEDs. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAT013

Chicago Manual of Style (16th Edition):

Tchoulfian, Pierre. “Propriétés électriques, optiques et électro-optiques de microfils GaN pour la réalisation de LEDs : Electrical, optical, and electro-optical properties of GaN microwires for the fabrication of LEDs.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed March 18, 2019. http://www.theses.fr/2015GREAT013.

MLA Handbook (7th Edition):

Tchoulfian, Pierre. “Propriétés électriques, optiques et électro-optiques de microfils GaN pour la réalisation de LEDs : Electrical, optical, and electro-optical properties of GaN microwires for the fabrication of LEDs.” 2015. Web. 18 Mar 2019.

Vancouver:

Tchoulfian P. Propriétés électriques, optiques et électro-optiques de microfils GaN pour la réalisation de LEDs : Electrical, optical, and electro-optical properties of GaN microwires for the fabrication of LEDs. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2019 Mar 18]. Available from: http://www.theses.fr/2015GREAT013.

Council of Science Editors:

Tchoulfian P. Propriétés électriques, optiques et électro-optiques de microfils GaN pour la réalisation de LEDs : Electrical, optical, and electro-optical properties of GaN microwires for the fabrication of LEDs. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAT013


Virginia Commonwealth University

18. Zhang, Fan. QUANTUM EFFICIENCY ENHANCEMENT FOR GAN BASED LIGHT-EMITTING DIODES AND VERTICAL CAVITY SURFACE-EMITTING LASERS.

Degree: PhD, Engineering, 2014, Virginia Commonwealth University

  This thesis explores the improvement of quantum efficiencies for InGaN/GaN heterostructures and their applications in light-emitting diodes (LEDs) and vertical cavity surface-emitting lasers (VCSELs).… (more)

Subjects/Keywords: Efficiency; LED; VCSEL; GaN; Electrical and Electronics; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Zhang, F. (2014). QUANTUM EFFICIENCY ENHANCEMENT FOR GAN BASED LIGHT-EMITTING DIODES AND VERTICAL CAVITY SURFACE-EMITTING LASERS. (Doctoral Dissertation). Virginia Commonwealth University. Retrieved from https://scholarscompass.vcu.edu/etd/3655

Chicago Manual of Style (16th Edition):

Zhang, Fan. “QUANTUM EFFICIENCY ENHANCEMENT FOR GAN BASED LIGHT-EMITTING DIODES AND VERTICAL CAVITY SURFACE-EMITTING LASERS.” 2014. Doctoral Dissertation, Virginia Commonwealth University. Accessed March 18, 2019. https://scholarscompass.vcu.edu/etd/3655.

MLA Handbook (7th Edition):

Zhang, Fan. “QUANTUM EFFICIENCY ENHANCEMENT FOR GAN BASED LIGHT-EMITTING DIODES AND VERTICAL CAVITY SURFACE-EMITTING LASERS.” 2014. Web. 18 Mar 2019.

Vancouver:

Zhang F. QUANTUM EFFICIENCY ENHANCEMENT FOR GAN BASED LIGHT-EMITTING DIODES AND VERTICAL CAVITY SURFACE-EMITTING LASERS. [Internet] [Doctoral dissertation]. Virginia Commonwealth University; 2014. [cited 2019 Mar 18]. Available from: https://scholarscompass.vcu.edu/etd/3655.

Council of Science Editors:

Zhang F. QUANTUM EFFICIENCY ENHANCEMENT FOR GAN BASED LIGHT-EMITTING DIODES AND VERTICAL CAVITY SURFACE-EMITTING LASERS. [Doctoral Dissertation]. Virginia Commonwealth University; 2014. Available from: https://scholarscompass.vcu.edu/etd/3655


Georgia Tech

19. Lochner, Zachary Meyer. Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition.

Degree: MS, Electrical and Computer Engineering, 2010, Georgia Tech

 This thesis describes the development of III-Nitride materials for light emitting applications. The goals of this research were to create and optimize a green light… (more)

Subjects/Keywords: MOCVD; GaN; Gallium nitride; LED; Laser diode; Light emitting diodes; Semiconductor lasers; Gallium nitride; Indium

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APA (6th Edition):

Lochner, Z. M. (2010). Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/33827

Chicago Manual of Style (16th Edition):

Lochner, Zachary Meyer. “Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition.” 2010. Masters Thesis, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/33827.

MLA Handbook (7th Edition):

Lochner, Zachary Meyer. “Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition.” 2010. Web. 18 Mar 2019.

Vancouver:

Lochner ZM. Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition. [Internet] [Masters thesis]. Georgia Tech; 2010. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/33827.

Council of Science Editors:

Lochner ZM. Green light emitting diodes and laser diodes grown by metalorganic chemical vapor deposition. [Masters Thesis]. Georgia Tech; 2010. Available from: http://hdl.handle.net/1853/33827


Penn State University

20. Jiang, Zhenyu. Light Emitting Diodes And Photodetectors Based On Iii-nitride And Colloidal Quantum Dot Materials.

Degree: PhD, Engineering Science and Mechanics, 2014, Penn State University

 In this work, we first proposed the tandem architecture for solution-processed near infrared PbSe colloidal quantum dot (CQD)-based photodetectors to address the high dark current… (more)

Subjects/Keywords: LED; Photodetector; GaN; Colloidal quantum-dot; optical communication; flexible electronics; infrared; dark current.

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APA (6th Edition):

Jiang, Z. (2014). Light Emitting Diodes And Photodetectors Based On Iii-nitride And Colloidal Quantum Dot Materials. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/23516

Chicago Manual of Style (16th Edition):

Jiang, Zhenyu. “Light Emitting Diodes And Photodetectors Based On Iii-nitride And Colloidal Quantum Dot Materials.” 2014. Doctoral Dissertation, Penn State University. Accessed March 18, 2019. https://etda.libraries.psu.edu/catalog/23516.

MLA Handbook (7th Edition):

Jiang, Zhenyu. “Light Emitting Diodes And Photodetectors Based On Iii-nitride And Colloidal Quantum Dot Materials.” 2014. Web. 18 Mar 2019.

Vancouver:

Jiang Z. Light Emitting Diodes And Photodetectors Based On Iii-nitride And Colloidal Quantum Dot Materials. [Internet] [Doctoral dissertation]. Penn State University; 2014. [cited 2019 Mar 18]. Available from: https://etda.libraries.psu.edu/catalog/23516.

Council of Science Editors:

Jiang Z. Light Emitting Diodes And Photodetectors Based On Iii-nitride And Colloidal Quantum Dot Materials. [Doctoral Dissertation]. Penn State University; 2014. Available from: https://etda.libraries.psu.edu/catalog/23516

21. Roche, Elissa. Croissance par HVPE et étude des propriétés optiques de microfils de GaN et de nanofils d'InxGa1-xN en vue de la réalisation de diodes électroluminescentes : HVPE growth and optical spectroscopy of GaN microwires and InxGa1-xN nanowires for LED application.

Degree: Docteur es, Physique des Matériaux, 2016, Université Blaise-Pascale, Clermont-Ferrand II

Ce manuscrit est consacré à la croissance par HVPE et à la spectroscopie optique de nanofils d'InxGa1-xN et de microfils de GaN en vue de… (more)

Subjects/Keywords: HVPE; Spectroscopie optique; Microfils; Nanofils; InGaN; GaN; DEL; Effet laser; Thermodynamique; HVPE; Optical spectroscopy; Microwires; Nanowires; InGaN; GaN; LED; Lasing effect; Thermodynamics

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APA (6th Edition):

Roche, E. (2016). Croissance par HVPE et étude des propriétés optiques de microfils de GaN et de nanofils d'InxGa1-xN en vue de la réalisation de diodes électroluminescentes : HVPE growth and optical spectroscopy of GaN microwires and InxGa1-xN nanowires for LED application. (Doctoral Dissertation). Université Blaise-Pascale, Clermont-Ferrand II. Retrieved from http://www.theses.fr/2016CLF22748

Chicago Manual of Style (16th Edition):

Roche, Elissa. “Croissance par HVPE et étude des propriétés optiques de microfils de GaN et de nanofils d'InxGa1-xN en vue de la réalisation de diodes électroluminescentes : HVPE growth and optical spectroscopy of GaN microwires and InxGa1-xN nanowires for LED application.” 2016. Doctoral Dissertation, Université Blaise-Pascale, Clermont-Ferrand II. Accessed March 18, 2019. http://www.theses.fr/2016CLF22748.

MLA Handbook (7th Edition):

Roche, Elissa. “Croissance par HVPE et étude des propriétés optiques de microfils de GaN et de nanofils d'InxGa1-xN en vue de la réalisation de diodes électroluminescentes : HVPE growth and optical spectroscopy of GaN microwires and InxGa1-xN nanowires for LED application.” 2016. Web. 18 Mar 2019.

Vancouver:

Roche E. Croissance par HVPE et étude des propriétés optiques de microfils de GaN et de nanofils d'InxGa1-xN en vue de la réalisation de diodes électroluminescentes : HVPE growth and optical spectroscopy of GaN microwires and InxGa1-xN nanowires for LED application. [Internet] [Doctoral dissertation]. Université Blaise-Pascale, Clermont-Ferrand II; 2016. [cited 2019 Mar 18]. Available from: http://www.theses.fr/2016CLF22748.

Council of Science Editors:

Roche E. Croissance par HVPE et étude des propriétés optiques de microfils de GaN et de nanofils d'InxGa1-xN en vue de la réalisation de diodes électroluminescentes : HVPE growth and optical spectroscopy of GaN microwires and InxGa1-xN nanowires for LED application. [Doctoral Dissertation]. Université Blaise-Pascale, Clermont-Ferrand II; 2016. Available from: http://www.theses.fr/2016CLF22748


NSYSU

22. Chen, Jing-Ru. Enhancement of Light Extraction of GaN Blue Light Emitting Diode.

Degree: Master, Electrical Engineering, 2004, NSYSU

 In recent years, even though the light output of GaN-based LED continues to increase, the brightness (~20 lm/W) is still low compared to conventional lighting… (more)

Subjects/Keywords: GaN LED; Reflector; Phororesist Microlenses; Flip-Chip technique

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APA (6th Edition):

Chen, J. (2004). Enhancement of Light Extraction of GaN Blue Light Emitting Diode. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715104-015852

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Jing-Ru. “Enhancement of Light Extraction of GaN Blue Light Emitting Diode.” 2004. Thesis, NSYSU. Accessed March 18, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715104-015852.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Jing-Ru. “Enhancement of Light Extraction of GaN Blue Light Emitting Diode.” 2004. Web. 18 Mar 2019.

Vancouver:

Chen J. Enhancement of Light Extraction of GaN Blue Light Emitting Diode. [Internet] [Thesis]. NSYSU; 2004. [cited 2019 Mar 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715104-015852.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen J. Enhancement of Light Extraction of GaN Blue Light Emitting Diode. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715104-015852

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

23. Limb, Jae Boum. Design, fabrication and characterization of III-nitride PN junction devices.

Degree: PhD, Electrical and Computer Engineering, 2007, Georgia Tech

 Design, fabrication and characterization of III-Nitride pn junction devices Jae Boum Limb 94 pages Directed by Dr. Russell D. Dupuis This dissertation describes an investigation… (more)

Subjects/Keywords: Nitride; Devices; GaN; AlGaN; InGaN; LED; Rectifier

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APA (6th Edition):

Limb, J. B. (2007). Design, fabrication and characterization of III-nitride PN junction devices. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/16331

Chicago Manual of Style (16th Edition):

Limb, Jae Boum. “Design, fabrication and characterization of III-nitride PN junction devices.” 2007. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/16331.

MLA Handbook (7th Edition):

Limb, Jae Boum. “Design, fabrication and characterization of III-nitride PN junction devices.” 2007. Web. 18 Mar 2019.

Vancouver:

Limb JB. Design, fabrication and characterization of III-nitride PN junction devices. [Internet] [Doctoral dissertation]. Georgia Tech; 2007. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/16331.

Council of Science Editors:

Limb JB. Design, fabrication and characterization of III-nitride PN junction devices. [Doctoral Dissertation]. Georgia Tech; 2007. Available from: http://hdl.handle.net/1853/16331


University of Colorado

24. Sepahvand, Alihossein. High Frequency DC-DC Power Conversion for Automotive LED Driver Applications.

Degree: PhD, 2018, University of Colorado

  This thesis studies high frequency dc-dc power converters for automotive LED driver applications. A high-frequency zero voltage switching (ZVS) integrated-magnetics Ćuk converter is well-suited… (more)

Subjects/Keywords: automotive led driver; dc-dc converter; gan; high efficiency; high frequency; resonant converter; Electrical and Computer Engineering; Electrical and Electronics

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APA (6th Edition):

Sepahvand, A. (2018). High Frequency DC-DC Power Conversion for Automotive LED Driver Applications. (Doctoral Dissertation). University of Colorado. Retrieved from https://scholar.colorado.edu/ecen_gradetds/181

Chicago Manual of Style (16th Edition):

Sepahvand, Alihossein. “High Frequency DC-DC Power Conversion for Automotive LED Driver Applications.” 2018. Doctoral Dissertation, University of Colorado. Accessed March 18, 2019. https://scholar.colorado.edu/ecen_gradetds/181.

MLA Handbook (7th Edition):

Sepahvand, Alihossein. “High Frequency DC-DC Power Conversion for Automotive LED Driver Applications.” 2018. Web. 18 Mar 2019.

Vancouver:

Sepahvand A. High Frequency DC-DC Power Conversion for Automotive LED Driver Applications. [Internet] [Doctoral dissertation]. University of Colorado; 2018. [cited 2019 Mar 18]. Available from: https://scholar.colorado.edu/ecen_gradetds/181.

Council of Science Editors:

Sepahvand A. High Frequency DC-DC Power Conversion for Automotive LED Driver Applications. [Doctoral Dissertation]. University of Colorado; 2018. Available from: https://scholar.colorado.edu/ecen_gradetds/181


North Carolina State University

25. Berkman, Erkan Acar. Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices.

Degree: PhD, Materials Science and Engineering, 2008, North Carolina State University

 In this study, heteroepitaxial growth of III-Nitrides was performed by metalorganic chemical vapor deposition (MOCVD) technique on (0001) Al2O3 substrates to develop GaN and InxGa1-xN… (more)

Subjects/Keywords: InGaN; GaN; MOCVD; LED; Photodiode; Wide Bandgap

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APA (6th Edition):

Berkman, E. A. (2008). Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3737

Chicago Manual of Style (16th Edition):

Berkman, Erkan Acar. “Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices.” 2008. Doctoral Dissertation, North Carolina State University. Accessed March 18, 2019. http://www.lib.ncsu.edu/resolver/1840.16/3737.

MLA Handbook (7th Edition):

Berkman, Erkan Acar. “Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices.” 2008. Web. 18 Mar 2019.

Vancouver:

Berkman EA. Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices. [Internet] [Doctoral dissertation]. North Carolina State University; 2008. [cited 2019 Mar 18]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3737.

Council of Science Editors:

Berkman EA. Growth and Fabrication of GaN and InxGa1-xN Based Optoelectronic Devices. [Doctoral Dissertation]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3737


North Carolina State University

26. Arkun, Fevzi Erdem. Study of Mn Doped GaN for Spintronic Applications.

Degree: PhD, Materials Science and Engineering, 2006, North Carolina State University

 Spintronics is an emerging field in which the spin of carriers in addition to the charge of carriers can be used to achieve new functionalities… (more)

Subjects/Keywords: GaMnN; InGaN; GaN; LED; spintronics; materials science; Optoelectronics

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APA (6th Edition):

Arkun, F. E. (2006). Study of Mn Doped GaN for Spintronic Applications. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/4607

Chicago Manual of Style (16th Edition):

Arkun, Fevzi Erdem. “Study of Mn Doped GaN for Spintronic Applications.” 2006. Doctoral Dissertation, North Carolina State University. Accessed March 18, 2019. http://www.lib.ncsu.edu/resolver/1840.16/4607.

MLA Handbook (7th Edition):

Arkun, Fevzi Erdem. “Study of Mn Doped GaN for Spintronic Applications.” 2006. Web. 18 Mar 2019.

Vancouver:

Arkun FE. Study of Mn Doped GaN for Spintronic Applications. [Internet] [Doctoral dissertation]. North Carolina State University; 2006. [cited 2019 Mar 18]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4607.

Council of Science Editors:

Arkun FE. Study of Mn Doped GaN for Spintronic Applications. [Doctoral Dissertation]. North Carolina State University; 2006. Available from: http://www.lib.ncsu.edu/resolver/1840.16/4607

27. Neplokh, Vladimir. Développement et application de la technique analytique de courant induit par faisceau d’électrons pour la caractérisation des dispositifs à base de nanofils de nitrure de gallium et de silicium : Development and application of electron beam induced current analytical technique for characterization of gallium nitride and silicon nanowire-based devices.

Degree: Docteur es, Physique, 2016, Paris Saclay

In this thesis I present a study of nanowires, and, in particular, I apply EBIC microscopy for investigation of their electro-optical properties. First, I describe… (more)

Subjects/Keywords: Nanofils (NWs); Courant induit par faisceau d'électrons (EBIC); Diodes électroluminescentes (LED); Cellule solaire; Nitrure de gallium (GaN); Silicium (Si); Nanowires (NWs); Electron beam induced current (EBIC); Light emitting diode (LED); Solar cell; Gallium nitride (GaN); Silicium (Si)

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APA (6th Edition):

Neplokh, V. (2016). Développement et application de la technique analytique de courant induit par faisceau d’électrons pour la caractérisation des dispositifs à base de nanofils de nitrure de gallium et de silicium : Development and application of electron beam induced current analytical technique for characterization of gallium nitride and silicon nanowire-based devices. (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2016SACLS427

Chicago Manual of Style (16th Edition):

Neplokh, Vladimir. “Développement et application de la technique analytique de courant induit par faisceau d’électrons pour la caractérisation des dispositifs à base de nanofils de nitrure de gallium et de silicium : Development and application of electron beam induced current analytical technique for characterization of gallium nitride and silicon nanowire-based devices.” 2016. Doctoral Dissertation, Paris Saclay. Accessed March 18, 2019. http://www.theses.fr/2016SACLS427.

MLA Handbook (7th Edition):

Neplokh, Vladimir. “Développement et application de la technique analytique de courant induit par faisceau d’électrons pour la caractérisation des dispositifs à base de nanofils de nitrure de gallium et de silicium : Development and application of electron beam induced current analytical technique for characterization of gallium nitride and silicon nanowire-based devices.” 2016. Web. 18 Mar 2019.

Vancouver:

Neplokh V. Développement et application de la technique analytique de courant induit par faisceau d’électrons pour la caractérisation des dispositifs à base de nanofils de nitrure de gallium et de silicium : Development and application of electron beam induced current analytical technique for characterization of gallium nitride and silicon nanowire-based devices. [Internet] [Doctoral dissertation]. Paris Saclay; 2016. [cited 2019 Mar 18]. Available from: http://www.theses.fr/2016SACLS427.

Council of Science Editors:

Neplokh V. Développement et application de la technique analytique de courant induit par faisceau d’électrons pour la caractérisation des dispositifs à base de nanofils de nitrure de gallium et de silicium : Development and application of electron beam induced current analytical technique for characterization of gallium nitride and silicon nanowire-based devices. [Doctoral Dissertation]. Paris Saclay; 2016. Available from: http://www.theses.fr/2016SACLS427

28. Halpin, Gabriel M. Enhancing GaN LED Efficiency through Nano-Gratings and Standing Wave Analysis.

Degree: MS, Electrical Engineering, 2013, Cal Poly

  Improving energy efficient lighting is a necessary step in reducing energy consumption.Lighting currently consumes 17% of all U.S. residential and commercial electricity, but a… (more)

Subjects/Keywords: simulation; GaN; LED; grating; nano; standing wave; Electromagnetics and Photonics

…8. LED models with: a) ITO case, b) Reference 1 - GaN added to make light… …Reference 2 - added GaN height = ITO height, d) Reference 3 - unaltered or unconventional LED… …difference time domain (analysis) GaN - Gallium Arsenide ITO - Indium Tin Oxide LED… …efficiencies reached 276 lm/W [2]. This thesis seeks to improve GaN LED light output by… …the blue LED itself. Improving the brightness and efficiency of a GaN LED falls into two… 

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APA (6th Edition):

Halpin, G. M. (2013). Enhancing GaN LED Efficiency through Nano-Gratings and Standing Wave Analysis. (Masters Thesis). Cal Poly. Retrieved from http://digitalcommons.calpoly.edu/theses/1120 ; 10.15368/theses.2013.201

Chicago Manual of Style (16th Edition):

Halpin, Gabriel M. “Enhancing GaN LED Efficiency through Nano-Gratings and Standing Wave Analysis.” 2013. Masters Thesis, Cal Poly. Accessed March 18, 2019. http://digitalcommons.calpoly.edu/theses/1120 ; 10.15368/theses.2013.201.

MLA Handbook (7th Edition):

Halpin, Gabriel M. “Enhancing GaN LED Efficiency through Nano-Gratings and Standing Wave Analysis.” 2013. Web. 18 Mar 2019.

Vancouver:

Halpin GM. Enhancing GaN LED Efficiency through Nano-Gratings and Standing Wave Analysis. [Internet] [Masters thesis]. Cal Poly; 2013. [cited 2019 Mar 18]. Available from: http://digitalcommons.calpoly.edu/theses/1120 ; 10.15368/theses.2013.201.

Council of Science Editors:

Halpin GM. Enhancing GaN LED Efficiency through Nano-Gratings and Standing Wave Analysis. [Masters Thesis]. Cal Poly; 2013. Available from: http://digitalcommons.calpoly.edu/theses/1120 ; 10.15368/theses.2013.201


Georgia Tech

29. Li, Nola. GaN on ZnO: a new approach to solid state lighting.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 The objective of the research was to develop high quality GaN epitaxial growth on alternative substrates that could result in higher external quantum efficiency devices.… (more)

Subjects/Keywords: Light emitting diode; LED; Solid state lighting; SSL; MOCVD; GaN; InGaN; ALD; AL₂O₃; Gallium nitride; Epitaxy; Indium; Aluminum oxide; Light emitting diodes

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APA (6th Edition):

Li, N. (2009). GaN on ZnO: a new approach to solid state lighting. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/33840

Chicago Manual of Style (16th Edition):

Li, Nola. “GaN on ZnO: a new approach to solid state lighting.” 2009. Doctoral Dissertation, Georgia Tech. Accessed March 18, 2019. http://hdl.handle.net/1853/33840.

MLA Handbook (7th Edition):

Li, Nola. “GaN on ZnO: a new approach to solid state lighting.” 2009. Web. 18 Mar 2019.

Vancouver:

Li N. GaN on ZnO: a new approach to solid state lighting. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2019 Mar 18]. Available from: http://hdl.handle.net/1853/33840.

Council of Science Editors:

Li N. GaN on ZnO: a new approach to solid state lighting. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/33840


Université de Grenoble

30. Bavencove, Anne-Laure. Réalisation de diodes électroluminescentes à base de nanofils GaN : Fabrication of GaN nanowire-based light emitting diodes.

Degree: Docteur es, Physique, 2012, Université de Grenoble

Ces travaux de thèse portent sur l'évaluation des propriétés de nanofils InGaN/GaN en vue de la réalisation de diodes électroluminescentes (LEDs). Deux types d'architecture, obtenus… (more)

Subjects/Keywords: Nanofils; Nitrure de Gallium (GaN); Diode Electroluminescente; Éclairage à l'état solide; Nanowires; Gallium Nitride; Ligh Emitting Diodes (LED); Solid state lighting; 530

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bavencove, A. (2012). Réalisation de diodes électroluminescentes à base de nanofils GaN : Fabrication of GaN nanowire-based light emitting diodes. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2012GRENY037

Chicago Manual of Style (16th Edition):

Bavencove, Anne-Laure. “Réalisation de diodes électroluminescentes à base de nanofils GaN : Fabrication of GaN nanowire-based light emitting diodes.” 2012. Doctoral Dissertation, Université de Grenoble. Accessed March 18, 2019. http://www.theses.fr/2012GRENY037.

MLA Handbook (7th Edition):

Bavencove, Anne-Laure. “Réalisation de diodes électroluminescentes à base de nanofils GaN : Fabrication of GaN nanowire-based light emitting diodes.” 2012. Web. 18 Mar 2019.

Vancouver:

Bavencove A. Réalisation de diodes électroluminescentes à base de nanofils GaN : Fabrication of GaN nanowire-based light emitting diodes. [Internet] [Doctoral dissertation]. Université de Grenoble; 2012. [cited 2019 Mar 18]. Available from: http://www.theses.fr/2012GRENY037.

Council of Science Editors:

Bavencove A. Réalisation de diodes électroluminescentes à base de nanofils GaN : Fabrication of GaN nanowire-based light emitting diodes. [Doctoral Dissertation]. Université de Grenoble; 2012. Available from: http://www.theses.fr/2012GRENY037

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