Advanced search options

Advanced Search Options 🞨

Browse by author name (“Author name starts with…”).

Find ETDs with:

in
/  
in
/  
in
/  
in

Written in Published in Earliest date Latest date

Sorted by

Results per page:

Sorted by: relevance · author · university · dateNew search

You searched for subject:(GaAsSb). Showing records 1 – 8 of 8 total matches.

Search Limiters

Last 2 Years | English Only

No search limiters apply to these results.

▼ Search Limiters


Australian National University

1. Alkhaldi, Huda. Porosity in Group IV-IV and III-V Alloys Induced by Ion Irradiation in the Nuclear Stopping Regime .

Degree: 2016, Australian National University

 The motivation for this study is twofold: i) from a fundamental perspective, to further investigate and understand porosity in group IV-IV and group III-V semiconductors… (more)

Subjects/Keywords: Porosity; Ge; SiGe; GaSb; GaAsSb; SAXS; capping layer

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Alkhaldi, H. (2016). Porosity in Group IV-IV and III-V Alloys Induced by Ion Irradiation in the Nuclear Stopping Regime . (Thesis). Australian National University. Retrieved from http://hdl.handle.net/1885/116164

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Alkhaldi, Huda. “Porosity in Group IV-IV and III-V Alloys Induced by Ion Irradiation in the Nuclear Stopping Regime .” 2016. Thesis, Australian National University. Accessed November 15, 2019. http://hdl.handle.net/1885/116164.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Alkhaldi, Huda. “Porosity in Group IV-IV and III-V Alloys Induced by Ion Irradiation in the Nuclear Stopping Regime .” 2016. Web. 15 Nov 2019.

Vancouver:

Alkhaldi H. Porosity in Group IV-IV and III-V Alloys Induced by Ion Irradiation in the Nuclear Stopping Regime . [Internet] [Thesis]. Australian National University; 2016. [cited 2019 Nov 15]. Available from: http://hdl.handle.net/1885/116164.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Alkhaldi H. Porosity in Group IV-IV and III-V Alloys Induced by Ion Irradiation in the Nuclear Stopping Regime . [Thesis]. Australian National University; 2016. Available from: http://hdl.handle.net/1885/116164

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Australian National University

2. Yuan, Xiaoming. Role of Sb in the epitaxial growth of Au-nucleated III-V nanowires .

Degree: 2016, Australian National University

 III-Sb NWs and related heterostructures have many excellent properties, such as the largest electron and hole mobilities, the narrowest bandgap, large g-factor, strong spin-orbit interaction… (more)

Subjects/Keywords: III-V nanowires; MOCVD; GaAsSb; GaSb; growth mechanism

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yuan, X. (2016). Role of Sb in the epitaxial growth of Au-nucleated III-V nanowires . (Thesis). Australian National University. Retrieved from http://hdl.handle.net/1885/108928

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yuan, Xiaoming. “Role of Sb in the epitaxial growth of Au-nucleated III-V nanowires .” 2016. Thesis, Australian National University. Accessed November 15, 2019. http://hdl.handle.net/1885/108928.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yuan, Xiaoming. “Role of Sb in the epitaxial growth of Au-nucleated III-V nanowires .” 2016. Web. 15 Nov 2019.

Vancouver:

Yuan X. Role of Sb in the epitaxial growth of Au-nucleated III-V nanowires . [Internet] [Thesis]. Australian National University; 2016. [cited 2019 Nov 15]. Available from: http://hdl.handle.net/1885/108928.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yuan X. Role of Sb in the epitaxial growth of Au-nucleated III-V nanowires . [Thesis]. Australian National University; 2016. Available from: http://hdl.handle.net/1885/108928

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Bordeaux I

3. Koné, Gilles Amadou. Caractérisation des effets thermiques et des mécanismes de défaillance spécifiques aux transistors bipolaires submicroniques sur substrat InP dédiés aux transmissions optiques Ethernet à 112 Gb/s : Développement des techniques de Microscopie Magnétique pour la localisation des défauts dans les circuits tridimensionnels.

Degree: Docteur es, Electronique, 2011, Université de Bordeaux I

Ces travaux de thèses présentent un protocole expérimental d’évaluation de la fiabilité des transistors bipolaire à double hétéro-jonction submicroniques sur substrat InP. Les mécanismes de… (more)

Subjects/Keywords: THB; Mécanisme de défaillance; Simulation physique 2D TCAD; Vieillissement accéléré; Modélisation compacte; InP; InGaAs; GaAsSb; HBT; Failure mechanisms; Compact Modelling; Accelerated Aging test; 2D simulation using TCAD; InP; InGaAs; GaAsSb

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Koné, G. A. (2011). Caractérisation des effets thermiques et des mécanismes de défaillance spécifiques aux transistors bipolaires submicroniques sur substrat InP dédiés aux transmissions optiques Ethernet à 112 Gb/s : Développement des techniques de Microscopie Magnétique pour la localisation des défauts dans les circuits tridimensionnels. (Doctoral Dissertation). Université de Bordeaux I. Retrieved from http://www.theses.fr/2011BOR14471

Chicago Manual of Style (16th Edition):

Koné, Gilles Amadou. “Caractérisation des effets thermiques et des mécanismes de défaillance spécifiques aux transistors bipolaires submicroniques sur substrat InP dédiés aux transmissions optiques Ethernet à 112 Gb/s : Développement des techniques de Microscopie Magnétique pour la localisation des défauts dans les circuits tridimensionnels.” 2011. Doctoral Dissertation, Université de Bordeaux I. Accessed November 15, 2019. http://www.theses.fr/2011BOR14471.

MLA Handbook (7th Edition):

Koné, Gilles Amadou. “Caractérisation des effets thermiques et des mécanismes de défaillance spécifiques aux transistors bipolaires submicroniques sur substrat InP dédiés aux transmissions optiques Ethernet à 112 Gb/s : Développement des techniques de Microscopie Magnétique pour la localisation des défauts dans les circuits tridimensionnels.” 2011. Web. 15 Nov 2019.

Vancouver:

Koné GA. Caractérisation des effets thermiques et des mécanismes de défaillance spécifiques aux transistors bipolaires submicroniques sur substrat InP dédiés aux transmissions optiques Ethernet à 112 Gb/s : Développement des techniques de Microscopie Magnétique pour la localisation des défauts dans les circuits tridimensionnels. [Internet] [Doctoral dissertation]. Université de Bordeaux I; 2011. [cited 2019 Nov 15]. Available from: http://www.theses.fr/2011BOR14471.

Council of Science Editors:

Koné GA. Caractérisation des effets thermiques et des mécanismes de défaillance spécifiques aux transistors bipolaires submicroniques sur substrat InP dédiés aux transmissions optiques Ethernet à 112 Gb/s : Développement des techniques de Microscopie Magnétique pour la localisation des défauts dans les circuits tridimensionnels. [Doctoral Dissertation]. Université de Bordeaux I; 2011. Available from: http://www.theses.fr/2011BOR14471


University of Cincinnati

4. Shrestha, Yuba R. Numerical Simulation of GaAsSb/InP Uni-Traveling Carrier Photodiode.

Degree: MS, Engineering : Electrical Engineering, 2005, University of Cincinnati

 The advent of the optical fiber amplifier has extended the distance between two repeaters and changed the role of the photodetector in an optical receiver… (more)

Subjects/Keywords: UTC-PD; Photodiode; GaAsSb/InP; Numerical Simulation

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Shrestha, Y. R. (2005). Numerical Simulation of GaAsSb/InP Uni-Traveling Carrier Photodiode. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1115823666

Chicago Manual of Style (16th Edition):

Shrestha, Yuba R. “Numerical Simulation of GaAsSb/InP Uni-Traveling Carrier Photodiode.” 2005. Masters Thesis, University of Cincinnati. Accessed November 15, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1115823666.

MLA Handbook (7th Edition):

Shrestha, Yuba R. “Numerical Simulation of GaAsSb/InP Uni-Traveling Carrier Photodiode.” 2005. Web. 15 Nov 2019.

Vancouver:

Shrestha YR. Numerical Simulation of GaAsSb/InP Uni-Traveling Carrier Photodiode. [Internet] [Masters thesis]. University of Cincinnati; 2005. [cited 2019 Nov 15]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1115823666.

Council of Science Editors:

Shrestha YR. Numerical Simulation of GaAsSb/InP Uni-Traveling Carrier Photodiode. [Masters Thesis]. University of Cincinnati; 2005. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1115823666

5. Wickramasuriya, Nadeeka Thejanie. Optical and Electrical Characterization of Single Semiconductor Nanowires.

Degree: PhD, Arts and Sciences: Physics, 2016, University of Cincinnati

  Strain distribution in the core and the shell of a semiconductor nanowire (NW) and its effect on band structures including carrier recombination dynamics of… (more)

Subjects/Keywords: Materials Science; Nanowire; Raman Scattering Spectroscopy; Transient Rayleigh Scattering Spectroscopy; InGaAs; GaAsSb; Gate dependent I-V Characteristics

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wickramasuriya, N. T. (2016). Optical and Electrical Characterization of Single Semiconductor Nanowires. (Doctoral Dissertation). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1467126849

Chicago Manual of Style (16th Edition):

Wickramasuriya, Nadeeka Thejanie. “Optical and Electrical Characterization of Single Semiconductor Nanowires.” 2016. Doctoral Dissertation, University of Cincinnati. Accessed November 15, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1467126849.

MLA Handbook (7th Edition):

Wickramasuriya, Nadeeka Thejanie. “Optical and Electrical Characterization of Single Semiconductor Nanowires.” 2016. Web. 15 Nov 2019.

Vancouver:

Wickramasuriya NT. Optical and Electrical Characterization of Single Semiconductor Nanowires. [Internet] [Doctoral dissertation]. University of Cincinnati; 2016. [cited 2019 Nov 15]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1467126849.

Council of Science Editors:

Wickramasuriya NT. Optical and Electrical Characterization of Single Semiconductor Nanowires. [Doctoral Dissertation]. University of Cincinnati; 2016. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1467126849


University of Cincinnati

6. BALARAMAN, PRADEEP ARUGUNAM. DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS.

Degree: MS, Engineering : Electrical Engineering, 2003, University of Cincinnati

 Device modeling using a two dimensional, drift-diffusion approach utilizing a commercial numerical device simulator has been used to investigate the operation and performance of InP/GaAsSb(more)

Subjects/Keywords: InP/GaAsSb/InP; Heterojunction bipolar transistor; device physics; simulation, modeling

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

BALARAMAN, P. A. (2003). DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786

Chicago Manual of Style (16th Edition):

BALARAMAN, PRADEEP ARUGUNAM. “DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS.” 2003. Masters Thesis, University of Cincinnati. Accessed November 15, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786.

MLA Handbook (7th Edition):

BALARAMAN, PRADEEP ARUGUNAM. “DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS.” 2003. Web. 15 Nov 2019.

Vancouver:

BALARAMAN PA. DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS. [Internet] [Masters thesis]. University of Cincinnati; 2003. [cited 2019 Nov 15]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786.

Council of Science Editors:

BALARAMAN PA. DESIGN, SIMULATION AND MODELING OF InP/GaAsSb/InP DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS. [Masters Thesis]. University of Cincinnati; 2003. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1069275786


University of Illinois – Urbana-Champaign

7. Xu, Huiming. High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications.

Degree: PhD, 1200, 2015, University of Illinois – Urbana-Champaign

 Heterojunction bipolar transistors (HBTs) are widely used in high-speed mixed-signal, radio frequency, and communication ICs because of their high speed, high breakdown voltage, and high… (more)

Subjects/Keywords: III-V; Heterojunction Bipolar Transistor (HBT); terahertz (THz); GaAsSb; Monolithic Microwave Integrated Circuit (MMIC); Radio Frequency (RF); Indium Phosphide (InP); High-Speed

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Xu, H. (2015). High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/72954

Chicago Manual of Style (16th Edition):

Xu, Huiming. “High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications.” 2015. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 15, 2019. http://hdl.handle.net/2142/72954.

MLA Handbook (7th Edition):

Xu, Huiming. “High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications.” 2015. Web. 15 Nov 2019.

Vancouver:

Xu H. High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2015. [cited 2019 Nov 15]. Available from: http://hdl.handle.net/2142/72954.

Council of Science Editors:

Xu H. High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/72954


University of Illinois – Urbana-Champaign

8. Cheng, Kuang. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications.

Degree: PhD, 1200, 2012, University of Illinois – Urbana-Champaign

 The prevalence of mobile computing devices and emerging demand for high data rate communication have motivated development of low power consumption, high performance circuits composed… (more)

Subjects/Keywords: Heterojunction Bipolar Transistor (HBT); Linearity; GaAsSb; Microwave Devices; Type-I DHBTs; Type-II DHBTs; Type-I/II DHBTs; Double Heterojunction Bipolar Transistor (DHBT)

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Cheng, K. (2012). Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/29462

Chicago Manual of Style (16th Edition):

Cheng, Kuang. “Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications.” 2012. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 15, 2019. http://hdl.handle.net/2142/29462.

MLA Handbook (7th Edition):

Cheng, Kuang. “Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications.” 2012. Web. 15 Nov 2019.

Vancouver:

Cheng K. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2012. [cited 2019 Nov 15]. Available from: http://hdl.handle.net/2142/29462.

Council of Science Editors:

Cheng K. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/29462

.