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You searched for subject:(GaAs). Showing records 1 – 30 of 343 total matches.

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1. Becdelievre, Jeanne. Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : A new precision medicine to target metastatic melanoma : use of antisense oligonucleotides.

Degree: Docteur es, Physique des matériaux, 2017, Lyon

L’objectif de cette thèse est de moduler le transport électrique dans des nanofils de GaAs par effet piézoélectrique ou ferroélectrique. Pour cela, une étude préliminaire… (more)

Subjects/Keywords: Nanofils de GaAs; GaAs nanowires

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Becdelievre, J. (2017). Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : A new precision medicine to target metastatic melanoma : use of antisense oligonucleotides. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2017LYSEC041

Chicago Manual of Style (16th Edition):

Becdelievre, Jeanne. “Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : A new precision medicine to target metastatic melanoma : use of antisense oligonucleotides.” 2017. Doctoral Dissertation, Lyon. Accessed June 21, 2018. http://www.theses.fr/2017LYSEC041.

MLA Handbook (7th Edition):

Becdelievre, Jeanne. “Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : A new precision medicine to target metastatic melanoma : use of antisense oligonucleotides.” 2017. Web. 21 Jun 2018.

Vancouver:

Becdelievre J. Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : A new precision medicine to target metastatic melanoma : use of antisense oligonucleotides. [Internet] [Doctoral dissertation]. Lyon; 2017. [cited 2018 Jun 21]. Available from: http://www.theses.fr/2017LYSEC041.

Council of Science Editors:

Becdelievre J. Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : A new precision medicine to target metastatic melanoma : use of antisense oligonucleotides. [Doctoral Dissertation]. Lyon; 2017. Available from: http://www.theses.fr/2017LYSEC041

2. Guan, Xin. Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Stratigraphy, sedimentology and paleogeography of a Paleozoic succession, Ghadames and Jefarah basin, Libya and Tunisia : characterization of potential reservoirs.

Degree: Docteur es, Physique des matériaux, 2017, Lyon

L’objectif de cette thèse est de développer un réseau de nanofils GaAs (coeur) / oxyde (coquille) pour la photoélectrolyse de l'eau. Pour cela, la géométrie… (more)

Subjects/Keywords: Nanofils GaAs; Nanowires GaAs

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APA (6th Edition):

Guan, X. (2017). Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Stratigraphy, sedimentology and paleogeography of a Paleozoic succession, Ghadames and Jefarah basin, Libya and Tunisia : characterization of potential reservoirs. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2017LYSEC057

Chicago Manual of Style (16th Edition):

Guan, Xin. “Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Stratigraphy, sedimentology and paleogeography of a Paleozoic succession, Ghadames and Jefarah basin, Libya and Tunisia : characterization of potential reservoirs.” 2017. Doctoral Dissertation, Lyon. Accessed June 21, 2018. http://www.theses.fr/2017LYSEC057.

MLA Handbook (7th Edition):

Guan, Xin. “Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Stratigraphy, sedimentology and paleogeography of a Paleozoic succession, Ghadames and Jefarah basin, Libya and Tunisia : characterization of potential reservoirs.” 2017. Web. 21 Jun 2018.

Vancouver:

Guan X. Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Stratigraphy, sedimentology and paleogeography of a Paleozoic succession, Ghadames and Jefarah basin, Libya and Tunisia : characterization of potential reservoirs. [Internet] [Doctoral dissertation]. Lyon; 2017. [cited 2018 Jun 21]. Available from: http://www.theses.fr/2017LYSEC057.

Council of Science Editors:

Guan X. Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Stratigraphy, sedimentology and paleogeography of a Paleozoic succession, Ghadames and Jefarah basin, Libya and Tunisia : characterization of potential reservoirs. [Doctoral Dissertation]. Lyon; 2017. Available from: http://www.theses.fr/2017LYSEC057


University of Manchester

3. Chanlek, Narong. Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator.

Degree: 2012, University of Manchester

 This thesis describes the development of a gallium arsenide (GaAs) photocathode preparation facility (PPF) with a load-lock interface as part of an upgrade to the… (more)

Subjects/Keywords: GaAs photocathode

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APA (6th Edition):

Chanlek, N. (2012). Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:146224

Chicago Manual of Style (16th Edition):

Chanlek, Narong. “Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator.” 2012. Doctoral Dissertation, University of Manchester. Accessed June 21, 2018. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:146224.

MLA Handbook (7th Edition):

Chanlek, Narong. “Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator.” 2012. Web. 21 Jun 2018.

Vancouver:

Chanlek N. Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator. [Internet] [Doctoral dissertation]. University of Manchester; 2012. [cited 2018 Jun 21]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:146224.

Council of Science Editors:

Chanlek N. Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator. [Doctoral Dissertation]. University of Manchester; 2012. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:146224


University of New South Wales

4. Macleod, Sarah. A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors.

Degree: Physics, 2015, University of New South Wales

 Semiconductor-insulator-semiconductor field effect transistor (SISFET) devices have a simpler disorder environment at low temperature (< 300mK) than other MBE-grown GaAs/AlGaAs heterostructures, and SISFET devices can… (more)

Subjects/Keywords: GaAs; SISFET

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APA (6th Edition):

Macleod, S. (2015). A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/55183

Chicago Manual of Style (16th Edition):

Macleod, Sarah. “A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors.” 2015. Doctoral Dissertation, University of New South Wales. Accessed June 21, 2018. http://handle.unsw.edu.au/1959.4/55183.

MLA Handbook (7th Edition):

Macleod, Sarah. “A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors.” 2015. Web. 21 Jun 2018.

Vancouver:

Macleod S. A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors. [Internet] [Doctoral dissertation]. University of New South Wales; 2015. [cited 2018 Jun 21]. Available from: http://handle.unsw.edu.au/1959.4/55183.

Council of Science Editors:

Macleod S. A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors. [Doctoral Dissertation]. University of New South Wales; 2015. Available from: http://handle.unsw.edu.au/1959.4/55183


NSYSU

5. Chen, Da-Ching. Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide.

Degree: Master, Electrical Engineering, 2009, NSYSU

 Due to the high electron mobility compared with Si, III-V compound semiconductors (GaAs) has been applied widely for high-speed devices. The titanium oxide (TiO2) has… (more)

Subjects/Keywords: TiO2; GaAs; ALD

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APA (6th Edition):

Chen, D. (2009). Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Da-Ching. “Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide.” 2009. Thesis, NSYSU. Accessed June 21, 2018. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Da-Ching. “Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide.” 2009. Web. 21 Jun 2018.

Vancouver:

Chen D. Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide. [Internet] [Thesis]. NSYSU; 2009. [cited 2018 Jun 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen D. Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

6. Chang, Chih-Chong. Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy.

Degree: Master, Physics, 2012, NSYSU

 Semiconductor band-gap energy can be measured by using photoreflectance (PR) spectroscopy. It used a pump-beam and a probe-beam and measure modulated reflectance (DR) of the… (more)

Subjects/Keywords: GaAs; transition; photoreflectance

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APA (6th Edition):

Chang, C. (2012). Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-165625

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Chih-Chong. “Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy.” 2012. Thesis, NSYSU. Accessed June 21, 2018. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-165625.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Chih-Chong. “Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy.” 2012. Web. 21 Jun 2018.

Vancouver:

Chang C. Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy. [Internet] [Thesis]. NSYSU; 2012. [cited 2018 Jun 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-165625.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang C. Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-165625

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Manchester

7. Chanlek, Narong. Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator.

Degree: PhD, 2012, University of Manchester

 This thesis describes the development of a gallium arsenide (GaAs) photocathode preparation facility (PPF) with a load-lock interface as part of an upgrade to the… (more)

Subjects/Keywords: 535; GaAs photocathode

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APA (6th Edition):

Chanlek, N. (2012). Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/quantum-efficiency-lifetime-studies-using-the-photocathode-preparation-experimental-facility-developed-for-the-alice-accelerator(197791f0-518e-4257-aa0e-04f9942b4110).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549031

Chicago Manual of Style (16th Edition):

Chanlek, Narong. “Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator.” 2012. Doctoral Dissertation, University of Manchester. Accessed June 21, 2018. https://www.research.manchester.ac.uk/portal/en/theses/quantum-efficiency-lifetime-studies-using-the-photocathode-preparation-experimental-facility-developed-for-the-alice-accelerator(197791f0-518e-4257-aa0e-04f9942b4110).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549031.

MLA Handbook (7th Edition):

Chanlek, Narong. “Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator.” 2012. Web. 21 Jun 2018.

Vancouver:

Chanlek N. Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator. [Internet] [Doctoral dissertation]. University of Manchester; 2012. [cited 2018 Jun 21]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/quantum-efficiency-lifetime-studies-using-the-photocathode-preparation-experimental-facility-developed-for-the-alice-accelerator(197791f0-518e-4257-aa0e-04f9942b4110).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549031.

Council of Science Editors:

Chanlek N. Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator. [Doctoral Dissertation]. University of Manchester; 2012. Available from: https://www.research.manchester.ac.uk/portal/en/theses/quantum-efficiency-lifetime-studies-using-the-photocathode-preparation-experimental-facility-developed-for-the-alice-accelerator(197791f0-518e-4257-aa0e-04f9942b4110).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549031


University of Southern California

8. Chi, Chun-Yung. Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices.

Degree: PhD, Electrical Engineering, 2015, University of Southern California

GaAs has superior optical and electrical performance over silicon; however the Fermi level pinning effect at the surface depletes free carrier when scale down to… (more)

Subjects/Keywords: GaAs; nanosheet; MOCVD

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APA (6th Edition):

Chi, C. (2015). Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/533039/rec/2950

Chicago Manual of Style (16th Edition):

Chi, Chun-Yung. “Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices.” 2015. Doctoral Dissertation, University of Southern California. Accessed June 21, 2018. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/533039/rec/2950.

MLA Handbook (7th Edition):

Chi, Chun-Yung. “Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices.” 2015. Web. 21 Jun 2018.

Vancouver:

Chi C. Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices. [Internet] [Doctoral dissertation]. University of Southern California; 2015. [cited 2018 Jun 21]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/533039/rec/2950.

Council of Science Editors:

Chi C. Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices. [Doctoral Dissertation]. University of Southern California; 2015. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/533039/rec/2950

9. St-Arnaud, Ken. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau.

Degree: M. Sc. A., Génie électrique, 2015, Université de Sherbrooke

 Ce projet de recherche vise à caractériser l'influence de divers traitements de passivation de surface de l'arséniure de gallium (GaAs) sur les propriétés électriques et… (more)

Subjects/Keywords: GaAs; Optique; Surface; Passivation

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APA (6th Edition):

St-Arnaud, K. (2015). Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau. (Masters Thesis). Université de Sherbrooke. Retrieved from http://www.collectionscanada.gc.ca/obj/thesescanada/vol2/QSHERU/TC-QSHERU-11143_7723.pdf ; http://savoirs.usherbrooke.ca/bitstream/11143/7723/1/St_Arnaud_Ken_MSc_2015.pdf

Chicago Manual of Style (16th Edition):

St-Arnaud, Ken. “Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau.” 2015. Masters Thesis, Université de Sherbrooke. Accessed June 21, 2018. http://www.collectionscanada.gc.ca/obj/thesescanada/vol2/QSHERU/TC-QSHERU-11143_7723.pdf ; http://savoirs.usherbrooke.ca/bitstream/11143/7723/1/St_Arnaud_Ken_MSc_2015.pdf.

MLA Handbook (7th Edition):

St-Arnaud, Ken. “Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau.” 2015. Web. 21 Jun 2018.

Vancouver:

St-Arnaud K. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau. [Internet] [Masters thesis]. Université de Sherbrooke; 2015. [cited 2018 Jun 21]. Available from: http://www.collectionscanada.gc.ca/obj/thesescanada/vol2/QSHERU/TC-QSHERU-11143_7723.pdf ; http://savoirs.usherbrooke.ca/bitstream/11143/7723/1/St_Arnaud_Ken_MSc_2015.pdf.

Council of Science Editors:

St-Arnaud K. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau. [Masters Thesis]. Université de Sherbrooke; 2015. Available from: http://www.collectionscanada.gc.ca/obj/thesescanada/vol2/QSHERU/TC-QSHERU-11143_7723.pdf ; http://savoirs.usherbrooke.ca/bitstream/11143/7723/1/St_Arnaud_Ken_MSc_2015.pdf

10. Caface, Raphael Antonio. Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos.

Degree: Mestrado, Física Aplicada, 2015, University of São Paulo

Dispositivos fotovoltaicos híbridos baseados em polímeros conjugados e semicondutores inorgânicos estão sendo utilizados nos últimos anos para a produção de células de energia solar com… (more)

Subjects/Keywords: Conjugated polymers; Dispositivos eletrônicos; Electronic devices; Nanofios de GaAs/AlGaAs/GaAs; Nanowires of GaAs / AlGaAs / GaAs; Polímeros conjugados

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APA (6th Edition):

Caface, R. A. (2015). Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos. (Masters Thesis). University of São Paulo. Retrieved from http://www.teses.usp.br/teses/disponiveis/76/76132/tde-29092015-102955/ ;

Chicago Manual of Style (16th Edition):

Caface, Raphael Antonio. “Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos.” 2015. Masters Thesis, University of São Paulo. Accessed June 21, 2018. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-29092015-102955/ ;.

MLA Handbook (7th Edition):

Caface, Raphael Antonio. “Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos.” 2015. Web. 21 Jun 2018.

Vancouver:

Caface RA. Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos. [Internet] [Masters thesis]. University of São Paulo; 2015. [cited 2018 Jun 21]. Available from: http://www.teses.usp.br/teses/disponiveis/76/76132/tde-29092015-102955/ ;.

Council of Science Editors:

Caface RA. Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos. [Masters Thesis]. University of São Paulo; 2015. Available from: http://www.teses.usp.br/teses/disponiveis/76/76132/tde-29092015-102955/ ;


NSYSU

11. Kuo, Ting-Huang. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.

Degree: Master, Electrical Engineering, 2008, NSYSU

 In this study, the characteristics of atomic layer deposited TiO2 films on Gallium Arsenide substrate were investigated. The physical and chemical properties were measured and… (more)

Subjects/Keywords: GaAs; ALD; TiO2; MOCVD

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Kuo, T. (2008). Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kuo, Ting-Huang. “Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.” 2008. Thesis, NSYSU. Accessed June 21, 2018. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kuo, Ting-Huang. “Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.” 2008. Web. 21 Jun 2018.

Vancouver:

Kuo T. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. [Internet] [Thesis]. NSYSU; 2008. [cited 2018 Jun 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kuo T. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Sherbrooke

12. St-Arnaud, Ken. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau .

Degree: 2015, Université de Sherbrooke

 Ce projet de recherche vise à caractériser l'influence de divers traitements de passivation de surface de l'arséniure de gallium (GaAs) sur les propriétés électriques et… (more)

Subjects/Keywords: GaAs; Optique; Surface; Passivation

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APA (6th Edition):

St-Arnaud, K. (2015). Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau . (Masters Thesis). Université de Sherbrooke. Retrieved from http://hdl.handle.net/11143/7723

Chicago Manual of Style (16th Edition):

St-Arnaud, Ken. “Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau .” 2015. Masters Thesis, Université de Sherbrooke. Accessed June 21, 2018. http://hdl.handle.net/11143/7723.

MLA Handbook (7th Edition):

St-Arnaud, Ken. “Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau .” 2015. Web. 21 Jun 2018.

Vancouver:

St-Arnaud K. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau . [Internet] [Masters thesis]. Université de Sherbrooke; 2015. [cited 2018 Jun 21]. Available from: http://hdl.handle.net/11143/7723.

Council of Science Editors:

St-Arnaud K. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau . [Masters Thesis]. Université de Sherbrooke; 2015. Available from: http://hdl.handle.net/11143/7723


University of Arizona

13. Gu, Baijie. Theory of Propagation and Manipulation of Excitons in GaAs Structures .

Degree: 2012, University of Arizona

 This dissertation presents research on the propagation and manipulation of excitons in GaAs. There are three main aspects to be addressed. In the first part,… (more)

Subjects/Keywords: semiconductors; Physics; excitons; GaAs

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APA (6th Edition):

Gu, B. (2012). Theory of Propagation and Manipulation of Excitons in GaAs Structures . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/268616

Chicago Manual of Style (16th Edition):

Gu, Baijie. “Theory of Propagation and Manipulation of Excitons in GaAs Structures .” 2012. Doctoral Dissertation, University of Arizona. Accessed June 21, 2018. http://hdl.handle.net/10150/268616.

MLA Handbook (7th Edition):

Gu, Baijie. “Theory of Propagation and Manipulation of Excitons in GaAs Structures .” 2012. Web. 21 Jun 2018.

Vancouver:

Gu B. Theory of Propagation and Manipulation of Excitons in GaAs Structures . [Internet] [Doctoral dissertation]. University of Arizona; 2012. [cited 2018 Jun 21]. Available from: http://hdl.handle.net/10150/268616.

Council of Science Editors:

Gu B. Theory of Propagation and Manipulation of Excitons in GaAs Structures . [Doctoral Dissertation]. University of Arizona; 2012. Available from: http://hdl.handle.net/10150/268616

14. Mochiduki, Yasunori. A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究.

Degree: 工学博士, 2017, The University of Tokyo / 東京大学

Subjects/Keywords: EL2; GaAs

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APA (6th Edition):

Mochiduki, Y. (2017). A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究. (Thesis). The University of Tokyo / 東京大学. Retrieved from http://hdl.handle.net/2261/1788

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mochiduki, Yasunori. “A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究.” 2017. Thesis, The University of Tokyo / 東京大学. Accessed June 21, 2018. http://hdl.handle.net/2261/1788.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mochiduki, Yasunori. “A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究.” 2017. Web. 21 Jun 2018.

Vancouver:

Mochiduki Y. A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究. [Internet] [Thesis]. The University of Tokyo / 東京大学; 2017. [cited 2018 Jun 21]. Available from: http://hdl.handle.net/2261/1788.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mochiduki Y. A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究. [Thesis]. The University of Tokyo / 東京大学; 2017. Available from: http://hdl.handle.net/2261/1788

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

15. Cheng, Jun. Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers.

Degree: Docteur es, Marériaux pour la micro- et l'opto-électronique, 2010, Ecully, Ecole centrale de Lyon

L’intégration monolithique de matériaux III-V ou Ge sur Si est un enjeu majeur de l’hétéroépitaxie qui a donné lieu à de nombreuses recherches depuis plus… (more)

Subjects/Keywords: Semiconducteur III-V; InP; GaAs

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APA (6th Edition):

Cheng, J. (2010). Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers. (Doctoral Dissertation). Ecully, Ecole centrale de Lyon. Retrieved from http://www.theses.fr/2010ECDL0024

Chicago Manual of Style (16th Edition):

Cheng, Jun. “Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers.” 2010. Doctoral Dissertation, Ecully, Ecole centrale de Lyon. Accessed June 21, 2018. http://www.theses.fr/2010ECDL0024.

MLA Handbook (7th Edition):

Cheng, Jun. “Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers.” 2010. Web. 21 Jun 2018.

Vancouver:

Cheng J. Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers. [Internet] [Doctoral dissertation]. Ecully, Ecole centrale de Lyon; 2010. [cited 2018 Jun 21]. Available from: http://www.theses.fr/2010ECDL0024.

Council of Science Editors:

Cheng J. Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers. [Doctoral Dissertation]. Ecully, Ecole centrale de Lyon; 2010. Available from: http://www.theses.fr/2010ECDL0024


University of New South Wales

16. Srinivasan, Ashwin. Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction.

Degree: Physics, 2014, University of New South Wales

 Quantum confined holes in GaAs offer the possibility of electrical spin manipulation via the spin-orbit interaction for the development of spintronic devices. This is a… (more)

Subjects/Keywords: GaAs; Hole; Spin; Quantum wire

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APA (6th Edition):

Srinivasan, A. (2014). Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/53785

Chicago Manual of Style (16th Edition):

Srinivasan, Ashwin. “Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction.” 2014. Doctoral Dissertation, University of New South Wales. Accessed June 21, 2018. http://handle.unsw.edu.au/1959.4/53785.

MLA Handbook (7th Edition):

Srinivasan, Ashwin. “Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction.” 2014. Web. 21 Jun 2018.

Vancouver:

Srinivasan A. Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction. [Internet] [Doctoral dissertation]. University of New South Wales; 2014. [cited 2018 Jun 21]. Available from: http://handle.unsw.edu.au/1959.4/53785.

Council of Science Editors:

Srinivasan A. Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction. [Doctoral Dissertation]. University of New South Wales; 2014. Available from: http://handle.unsw.edu.au/1959.4/53785


University of New South Wales

17. Yeoh, LaReine. Spin in Low Dimensional GaAs Hole Systems.

Degree: Physics, 2015, University of New South Wales

 There has been recent interest in quantum confined holes in GaAs semiconductors as they have potential applications in electrical spin manipulation via the spin-orbit interaction,… (more)

Subjects/Keywords: GaAs; Semicondutors; Low termperature; Holes

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APA (6th Edition):

Yeoh, L. (2015). Spin in Low Dimensional GaAs Hole Systems. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/54708

Chicago Manual of Style (16th Edition):

Yeoh, LaReine. “Spin in Low Dimensional GaAs Hole Systems.” 2015. Doctoral Dissertation, University of New South Wales. Accessed June 21, 2018. http://handle.unsw.edu.au/1959.4/54708.

MLA Handbook (7th Edition):

Yeoh, LaReine. “Spin in Low Dimensional GaAs Hole Systems.” 2015. Web. 21 Jun 2018.

Vancouver:

Yeoh L. Spin in Low Dimensional GaAs Hole Systems. [Internet] [Doctoral dissertation]. University of New South Wales; 2015. [cited 2018 Jun 21]. Available from: http://handle.unsw.edu.au/1959.4/54708.

Council of Science Editors:

Yeoh L. Spin in Low Dimensional GaAs Hole Systems. [Doctoral Dissertation]. University of New South Wales; 2015. Available from: http://handle.unsw.edu.au/1959.4/54708


University of New South Wales

18. Ho, Lap-hang. Single-layer transport measurements of bilayer 2D electron and hole systems in GaAs heterostructures.

Degree: Physics, 2010, University of New South Wales

 In this thesis we have studied bilayer two-dimensional (2D) electron and hole systems in GaAs. The work consists of three experimental studies, which involve low… (more)

Subjects/Keywords: GaAs; Bilayer; 2D systems

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APA (6th Edition):

Ho, L. (2010). Single-layer transport measurements of bilayer 2D electron and hole systems in GaAs heterostructures. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/50348

Chicago Manual of Style (16th Edition):

Ho, Lap-hang. “Single-layer transport measurements of bilayer 2D electron and hole systems in GaAs heterostructures.” 2010. Doctoral Dissertation, University of New South Wales. Accessed June 21, 2018. http://handle.unsw.edu.au/1959.4/50348.

MLA Handbook (7th Edition):

Ho, Lap-hang. “Single-layer transport measurements of bilayer 2D electron and hole systems in GaAs heterostructures.” 2010. Web. 21 Jun 2018.

Vancouver:

Ho L. Single-layer transport measurements of bilayer 2D electron and hole systems in GaAs heterostructures. [Internet] [Doctoral dissertation]. University of New South Wales; 2010. [cited 2018 Jun 21]. Available from: http://handle.unsw.edu.au/1959.4/50348.

Council of Science Editors:

Ho L. Single-layer transport measurements of bilayer 2D electron and hole systems in GaAs heterostructures. [Doctoral Dissertation]. University of New South Wales; 2010. Available from: http://handle.unsw.edu.au/1959.4/50348


Ohio University

19. Ho, Wai. GaAs MESFET modeling and its applications.

Degree: MS, Electrical Engineering & Computer Science (Engineering and Technology), 1993, Ohio University

GaAs MESFET modeling and its applications Advisors/Committee Members: Mokari, M. (Advisor).

Subjects/Keywords: GaAs MESFET modeling; MESFET; GaAs

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APA (6th Edition):

Ho, W. (1993). GaAs MESFET modeling and its applications. (Masters Thesis). Ohio University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072

Chicago Manual of Style (16th Edition):

Ho, Wai. “GaAs MESFET modeling and its applications.” 1993. Masters Thesis, Ohio University. Accessed June 21, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072.

MLA Handbook (7th Edition):

Ho, Wai. “GaAs MESFET modeling and its applications.” 1993. Web. 21 Jun 2018.

Vancouver:

Ho W. GaAs MESFET modeling and its applications. [Internet] [Masters thesis]. Ohio University; 1993. [cited 2018 Jun 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072.

Council of Science Editors:

Ho W. GaAs MESFET modeling and its applications. [Masters Thesis]. Ohio University; 1993. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072


University of Notre Dame

20. Xiu Xing. Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications.

Degree: PhD, Electrical Engineering, 2013, University of Notre Dame

  In this work, wet thermal oxidation of epitaxially-grown InAlP in combination with a pseudomorphic high electron mobility In0.22Ga0.78As channel has been explored, as an… (more)

Subjects/Keywords: Pseudomorphic; InAlP oxide; GaAs; MOSFET; RF

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APA (6th Edition):

Xing, X. (2013). Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/r494vh5694z

Chicago Manual of Style (16th Edition):

Xing, Xiu. “Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications.” 2013. Doctoral Dissertation, University of Notre Dame. Accessed June 21, 2018. https://curate.nd.edu/show/r494vh5694z.

MLA Handbook (7th Edition):

Xing, Xiu. “Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications.” 2013. Web. 21 Jun 2018.

Vancouver:

Xing X. Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications. [Internet] [Doctoral dissertation]. University of Notre Dame; 2013. [cited 2018 Jun 21]. Available from: https://curate.nd.edu/show/r494vh5694z.

Council of Science Editors:

Xing X. Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications. [Doctoral Dissertation]. University of Notre Dame; 2013. Available from: https://curate.nd.edu/show/r494vh5694z


The Ohio State University

21. Lee, Donghun. Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors.

Degree: PhD, Physics, 2010, The Ohio State University

 Here we demonstrate the realization of an atomic-scale gate electrode, formed by a charged As vacancy in the GaAs(110) surface. A custom-built low temperature scanning… (more)

Subjects/Keywords: Physics; Charged vacancy; Single dopant; GaAs

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APA (6th Edition):

Lee, D. (2010). Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1274913629

Chicago Manual of Style (16th Edition):

Lee, Donghun. “Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors.” 2010. Doctoral Dissertation, The Ohio State University. Accessed June 21, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1274913629.

MLA Handbook (7th Edition):

Lee, Donghun. “Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors.” 2010. Web. 21 Jun 2018.

Vancouver:

Lee D. Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors. [Internet] [Doctoral dissertation]. The Ohio State University; 2010. [cited 2018 Jun 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1274913629.

Council of Science Editors:

Lee D. Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors. [Doctoral Dissertation]. The Ohio State University; 2010. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1274913629


NSYSU

22. Lai, Chih-Ming. GaAs VCSEL Metallization and Characterization.

Degree: Master, Physics, 2000, NSYSU

 ãGaAs VCSEL Contact Process and Feature Analysis ãIn this article, we talk about the process of metalization on sample of epied GaAs VCSEL structure. We… (more)

Subjects/Keywords: EL; GaAs; VCSEL

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APA (6th Edition):

Lai, C. (2000). GaAs VCSEL Metallization and Characterization. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lai, Chih-Ming. “GaAs VCSEL Metallization and Characterization.” 2000. Thesis, NSYSU. Accessed June 21, 2018. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lai, Chih-Ming. “GaAs VCSEL Metallization and Characterization.” 2000. Web. 21 Jun 2018.

Vancouver:

Lai C. GaAs VCSEL Metallization and Characterization. [Internet] [Thesis]. NSYSU; 2000. [cited 2018 Jun 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lai C. GaAs VCSEL Metallization and Characterization. [Thesis]. NSYSU; 2000. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

23. Wu, Chin-shu. Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage.

Degree: Master, Physics, 2004, NSYSU

We discove the decrement,comparing the Electroreflectance spectroscopy of theforward biased voltage is 0.5V after the photon energy is 1.8eV.We discuss the case from Asymptotic form and the sample. Advisors/Committee Members: Der-Jun Jang (chair), Dong-Po Wang (committee member), I-Min Jiang (chair).

Subjects/Keywords: GaAs; Electroreflectance spectroscopy

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APA (6th Edition):

Wu, C. (2004). Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630104-163318

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Chin-shu. “Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage.” 2004. Thesis, NSYSU. Accessed June 21, 2018. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630104-163318.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Chin-shu. “Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage.” 2004. Web. 21 Jun 2018.

Vancouver:

Wu C. Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage. [Internet] [Thesis]. NSYSU; 2004. [cited 2018 Jun 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630104-163318.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu C. Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630104-163318

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

24. Chen, Ying-shiuan. The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs.

Degree: Master, Physics, 2004, NSYSU

 The electroreflectance (ER) of surface-intrinsic-n+ type doped GaAs has exhibited many Franz-Keldysh oscillations to enable the application of fast Fourier transform to separate the heavy… (more)

Subjects/Keywords: GaAs; electroreflectance spectroscopy

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APA (6th Edition):

Chen, Y. (2004). The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701104-150710

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Ying-shiuan. “The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs.” 2004. Thesis, NSYSU. Accessed June 21, 2018. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701104-150710.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Ying-shiuan. “The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs.” 2004. Web. 21 Jun 2018.

Vancouver:

Chen Y. The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs. [Internet] [Thesis]. NSYSU; 2004. [cited 2018 Jun 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701104-150710.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701104-150710

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

25. Huang, Shiuan-Hua. Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation.

Degree: Master, Electro-Optical Engineering, 2012, NSYSU

 In this thesis, a novel method for multi-pulse with equal chirp characteristics and more efficient THz generation through two photon absorption (TPA) are investigated and… (more)

Subjects/Keywords: LT-GaAs; THz; pulse shaper; TPA; PCA

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APA (6th Edition):

Huang, S. (2012). Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-110625

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Shiuan-Hua. “Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation.” 2012. Thesis, NSYSU. Accessed June 21, 2018. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-110625.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Shiuan-Hua. “Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation.” 2012. Web. 21 Jun 2018.

Vancouver:

Huang S. Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation. [Internet] [Thesis]. NSYSU; 2012. [cited 2018 Jun 21]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-110625.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang S. Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-110625

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Rochester

26. Guarino, Gregg. Finite element modeling and simulation of photoconductive and ballistic semiconductor nanodevices.

Degree: PhD, 2010, University of Rochester

 This thesis presents models, simulation techniques, and simulation results for two types of semiconductor nanodevice; the metal-semiconductor-metal (MSM) photodetector, and the ballistic deflection transistor (BDT).… (more)

Subjects/Keywords: Optoelectronics; Low temperature grown GaAs; Ultrafast photodetector

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Guarino, G. (2010). Finite element modeling and simulation of photoconductive and ballistic semiconductor nanodevices. (Doctoral Dissertation). University of Rochester. Retrieved from http://hdl.handle.net/1802/12724

Chicago Manual of Style (16th Edition):

Guarino, Gregg. “Finite element modeling and simulation of photoconductive and ballistic semiconductor nanodevices.” 2010. Doctoral Dissertation, University of Rochester. Accessed June 21, 2018. http://hdl.handle.net/1802/12724.

MLA Handbook (7th Edition):

Guarino, Gregg. “Finite element modeling and simulation of photoconductive and ballistic semiconductor nanodevices.” 2010. Web. 21 Jun 2018.

Vancouver:

Guarino G. Finite element modeling and simulation of photoconductive and ballistic semiconductor nanodevices. [Internet] [Doctoral dissertation]. University of Rochester; 2010. [cited 2018 Jun 21]. Available from: http://hdl.handle.net/1802/12724.

Council of Science Editors:

Guarino G. Finite element modeling and simulation of photoconductive and ballistic semiconductor nanodevices. [Doctoral Dissertation]. University of Rochester; 2010. Available from: http://hdl.handle.net/1802/12724


University of Sydney

27. Croot, Xanthe Grace. The Environment and Interactions of Electrons in GaAs Quantum Dots .

Degree: 2017, University of Sydney

 At the dawn of the twentieth century, the underpinnings of centuries-old classical physics were beginning to be unravelled by the advent of quantum mechanics. As… (more)

Subjects/Keywords: GaAs; Quantum; Dot; Electron; Phonom; Computer

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APA (6th Edition):

Croot, X. G. (2017). The Environment and Interactions of Electrons in GaAs Quantum Dots . (Thesis). University of Sydney. Retrieved from http://hdl.handle.net/2123/18117

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Croot, Xanthe Grace. “The Environment and Interactions of Electrons in GaAs Quantum Dots .” 2017. Thesis, University of Sydney. Accessed June 21, 2018. http://hdl.handle.net/2123/18117.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Croot, Xanthe Grace. “The Environment and Interactions of Electrons in GaAs Quantum Dots .” 2017. Web. 21 Jun 2018.

Vancouver:

Croot XG. The Environment and Interactions of Electrons in GaAs Quantum Dots . [Internet] [Thesis]. University of Sydney; 2017. [cited 2018 Jun 21]. Available from: http://hdl.handle.net/2123/18117.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Croot XG. The Environment and Interactions of Electrons in GaAs Quantum Dots . [Thesis]. University of Sydney; 2017. Available from: http://hdl.handle.net/2123/18117

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


McMaster University

28. Ghosh, Subir Chandra. Growth of Nanowires on GaAs (100) Substrate.

Degree: PhD, 2009, McMaster University

Using gold as seed particles, the vapour-liquid-solid (VLS) growth of GaAs nanowires by molecular beam epitaxy on GaAs (100) substrates was investigated with a… (more)

Subjects/Keywords: growth; GaAs (100); nanowires; topography; particle

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APA (6th Edition):

Ghosh, S. C. (2009). Growth of Nanowires on GaAs (100) Substrate. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/17294

Chicago Manual of Style (16th Edition):

Ghosh, Subir Chandra. “Growth of Nanowires on GaAs (100) Substrate.” 2009. Doctoral Dissertation, McMaster University. Accessed June 21, 2018. http://hdl.handle.net/11375/17294.

MLA Handbook (7th Edition):

Ghosh, Subir Chandra. “Growth of Nanowires on GaAs (100) Substrate.” 2009. Web. 21 Jun 2018.

Vancouver:

Ghosh SC. Growth of Nanowires on GaAs (100) Substrate. [Internet] [Doctoral dissertation]. McMaster University; 2009. [cited 2018 Jun 21]. Available from: http://hdl.handle.net/11375/17294.

Council of Science Editors:

Ghosh SC. Growth of Nanowires on GaAs (100) Substrate. [Doctoral Dissertation]. McMaster University; 2009. Available from: http://hdl.handle.net/11375/17294


McMaster University

29. Zhang, Junpeng. ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS.

Degree: MASc, 2014, McMaster University

III-V semiconductor nanowires (NWs) are often referred to as one-dimensional (1-D) materials because of their high aspect ratios and excellent quantum confinement properties. Spacing between… (more)

Subjects/Keywords: GaAs nanowire; ITO; Absorptance; Ohmic contact

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APA (6th Edition):

Zhang, J. (2014). ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS. (Masters Thesis). McMaster University. Retrieved from http://hdl.handle.net/11375/16364

Chicago Manual of Style (16th Edition):

Zhang, Junpeng. “ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS.” 2014. Masters Thesis, McMaster University. Accessed June 21, 2018. http://hdl.handle.net/11375/16364.

MLA Handbook (7th Edition):

Zhang, Junpeng. “ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS.” 2014. Web. 21 Jun 2018.

Vancouver:

Zhang J. ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS. [Internet] [Masters thesis]. McMaster University; 2014. [cited 2018 Jun 21]. Available from: http://hdl.handle.net/11375/16364.

Council of Science Editors:

Zhang J. ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS. [Masters Thesis]. McMaster University; 2014. Available from: http://hdl.handle.net/11375/16364


University of Arizona

30. Rupper, Greg. Theory of Semiconductor Laser Cooling .

Degree: 2010, University of Arizona

 Recently laser cooling of semiconductors has received renewed attention, with the hope that a semiconductor cooler might be able to achieve cryogenic temperatures. In order… (more)

Subjects/Keywords: Absorption; GaAs; laser cooling; luminescence; Semiconductor cooling

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APA (6th Edition):

Rupper, G. (2010). Theory of Semiconductor Laser Cooling . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/194520

Chicago Manual of Style (16th Edition):

Rupper, Greg. “Theory of Semiconductor Laser Cooling .” 2010. Doctoral Dissertation, University of Arizona. Accessed June 21, 2018. http://hdl.handle.net/10150/194520.

MLA Handbook (7th Edition):

Rupper, Greg. “Theory of Semiconductor Laser Cooling .” 2010. Web. 21 Jun 2018.

Vancouver:

Rupper G. Theory of Semiconductor Laser Cooling . [Internet] [Doctoral dissertation]. University of Arizona; 2010. [cited 2018 Jun 21]. Available from: http://hdl.handle.net/10150/194520.

Council of Science Editors:

Rupper G. Theory of Semiconductor Laser Cooling . [Doctoral Dissertation]. University of Arizona; 2010. Available from: http://hdl.handle.net/10150/194520

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