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You searched for subject:(GaAs). Showing records 1 – 30 of 411 total matches.

[1] [2] [3] [4] [5] … [14]

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1. Becdelievre, Jeanne. Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : Interaction entre supraconductivité et ferromagnétisme.

Degree: Docteur es, Physique des matériaux, 2017, Lyon

L’objectif de cette thèse est de moduler le transport électrique dans des nanofils de GaAs par effet piézoélectrique ou ferroélectrique. Pour cela, une étude préliminaire… (more)

Subjects/Keywords: Nanofils de GaAs; GaAs nanowires

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Becdelievre, J. (2017). Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : Interaction entre supraconductivité et ferromagnétisme. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2017LYSEC041

Chicago Manual of Style (16th Edition):

Becdelievre, Jeanne. “Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : Interaction entre supraconductivité et ferromagnétisme.” 2017. Doctoral Dissertation, Lyon. Accessed December 05, 2020. http://www.theses.fr/2017LYSEC041.

MLA Handbook (7th Edition):

Becdelievre, Jeanne. “Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : Interaction entre supraconductivité et ferromagnétisme.” 2017. Web. 05 Dec 2020.

Vancouver:

Becdelievre J. Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : Interaction entre supraconductivité et ferromagnétisme. [Internet] [Doctoral dissertation]. Lyon; 2017. [cited 2020 Dec 05]. Available from: http://www.theses.fr/2017LYSEC041.

Council of Science Editors:

Becdelievre J. Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : Interaction entre supraconductivité et ferromagnétisme. [Doctoral Dissertation]. Lyon; 2017. Available from: http://www.theses.fr/2017LYSEC041

2. Guan, Xin. Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Modelization of dry friction damping in assembled structures.

Degree: Docteur es, Physique des matériaux, 2017, Lyon

L’objectif de cette thèse est de développer un réseau de nanofils GaAs (coeur) / oxyde (coquille) pour la photoélectrolyse de l'eau. Pour cela, la géométrie… (more)

Subjects/Keywords: Nanofils GaAs; Nanowires GaAs

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APA (6th Edition):

Guan, X. (2017). Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Modelization of dry friction damping in assembled structures. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2017LYSEC057

Chicago Manual of Style (16th Edition):

Guan, Xin. “Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Modelization of dry friction damping in assembled structures.” 2017. Doctoral Dissertation, Lyon. Accessed December 05, 2020. http://www.theses.fr/2017LYSEC057.

MLA Handbook (7th Edition):

Guan, Xin. “Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Modelization of dry friction damping in assembled structures.” 2017. Web. 05 Dec 2020.

Vancouver:

Guan X. Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Modelization of dry friction damping in assembled structures. [Internet] [Doctoral dissertation]. Lyon; 2017. [cited 2020 Dec 05]. Available from: http://www.theses.fr/2017LYSEC057.

Council of Science Editors:

Guan X. Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Modelization of dry friction damping in assembled structures. [Doctoral Dissertation]. Lyon; 2017. Available from: http://www.theses.fr/2017LYSEC057


University of Manchester

3. Chanlek, Narong. Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator.

Degree: 2012, University of Manchester

 This thesis describes the development of a gallium arsenide (GaAs) photocathode preparation facility (PPF) with a load-lock interface as part of an upgrade to the… (more)

Subjects/Keywords: GaAs photocathode

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APA (6th Edition):

Chanlek, N. (2012). Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:146224

Chicago Manual of Style (16th Edition):

Chanlek, Narong. “Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator.” 2012. Doctoral Dissertation, University of Manchester. Accessed December 05, 2020. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:146224.

MLA Handbook (7th Edition):

Chanlek, Narong. “Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator.” 2012. Web. 05 Dec 2020.

Vancouver:

Chanlek N. Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator. [Internet] [Doctoral dissertation]. University of Manchester; 2012. [cited 2020 Dec 05]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:146224.

Council of Science Editors:

Chanlek N. Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator. [Doctoral Dissertation]. University of Manchester; 2012. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:146224


University of New South Wales

4. Macleod, Sarah. A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors.

Degree: Physics, 2015, University of New South Wales

 Semiconductor-insulator-semiconductor field effect transistor (SISFET) devices have a simpler disorder environment at low temperature (< 300mK) than other MBE-grown GaAs/AlGaAs heterostructures, and SISFET devices can… (more)

Subjects/Keywords: GaAs; SISFET

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APA (6th Edition):

Macleod, S. (2015). A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/55183 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:36702/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Macleod, Sarah. “A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors.” 2015. Doctoral Dissertation, University of New South Wales. Accessed December 05, 2020. http://handle.unsw.edu.au/1959.4/55183 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:36702/SOURCE02?view=true.

MLA Handbook (7th Edition):

Macleod, Sarah. “A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors.” 2015. Web. 05 Dec 2020.

Vancouver:

Macleod S. A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors. [Internet] [Doctoral dissertation]. University of New South Wales; 2015. [cited 2020 Dec 05]. Available from: http://handle.unsw.edu.au/1959.4/55183 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:36702/SOURCE02?view=true.

Council of Science Editors:

Macleod S. A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors. [Doctoral Dissertation]. University of New South Wales; 2015. Available from: http://handle.unsw.edu.au/1959.4/55183 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:36702/SOURCE02?view=true


NSYSU

5. Chen, Da-Ching. Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide.

Degree: Master, Electrical Engineering, 2009, NSYSU

 Due to the high electron mobility compared with Si, III-V compound semiconductors (GaAs) has been applied widely for high-speed devices. The titanium oxide (TiO2) has… (more)

Subjects/Keywords: TiO2; GaAs; ALD

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APA (6th Edition):

Chen, D. (2009). Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Da-Ching. “Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide.” 2009. Thesis, NSYSU. Accessed December 05, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Da-Ching. “Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide.” 2009. Web. 05 Dec 2020.

Vancouver:

Chen D. Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide. [Internet] [Thesis]. NSYSU; 2009. [cited 2020 Dec 05]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen D. Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

6. Chang, Chih-Chong. Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy.

Degree: Master, Physics, 2012, NSYSU

 Semiconductor band-gap energy can be measured by using photoreflectance (PR) spectroscopy. It used a pump-beam and a probe-beam and measure modulated reflectance (DR) of the… (more)

Subjects/Keywords: GaAs; transition; photoreflectance

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APA (6th Edition):

Chang, C. (2012). Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-165625

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Chih-Chong. “Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy.” 2012. Thesis, NSYSU. Accessed December 05, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-165625.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Chih-Chong. “Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy.” 2012. Web. 05 Dec 2020.

Vancouver:

Chang C. Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy. [Internet] [Thesis]. NSYSU; 2012. [cited 2020 Dec 05]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-165625.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang C. Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-165625

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Manchester

7. Chanlek, Narong. Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator.

Degree: PhD, 2012, University of Manchester

 This thesis describes the development of a gallium arsenide (GaAs) photocathode preparation facility (PPF) with a load-lock interface as part of an upgrade to the… (more)

Subjects/Keywords: 535; GaAs photocathode

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chanlek, N. (2012). Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/quantum-efficiency-lifetime-studies-using-the-photocathode-preparation-experimental-facility-developed-for-the-alice-accelerator(197791f0-518e-4257-aa0e-04f9942b4110).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549031

Chicago Manual of Style (16th Edition):

Chanlek, Narong. “Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator.” 2012. Doctoral Dissertation, University of Manchester. Accessed December 05, 2020. https://www.research.manchester.ac.uk/portal/en/theses/quantum-efficiency-lifetime-studies-using-the-photocathode-preparation-experimental-facility-developed-for-the-alice-accelerator(197791f0-518e-4257-aa0e-04f9942b4110).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549031.

MLA Handbook (7th Edition):

Chanlek, Narong. “Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator.” 2012. Web. 05 Dec 2020.

Vancouver:

Chanlek N. Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator. [Internet] [Doctoral dissertation]. University of Manchester; 2012. [cited 2020 Dec 05]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/quantum-efficiency-lifetime-studies-using-the-photocathode-preparation-experimental-facility-developed-for-the-alice-accelerator(197791f0-518e-4257-aa0e-04f9942b4110).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549031.

Council of Science Editors:

Chanlek N. Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator. [Doctoral Dissertation]. University of Manchester; 2012. Available from: https://www.research.manchester.ac.uk/portal/en/theses/quantum-efficiency-lifetime-studies-using-the-photocathode-preparation-experimental-facility-developed-for-the-alice-accelerator(197791f0-518e-4257-aa0e-04f9942b4110).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549031


University of Southern California

8. Chi, Chun-Yung. Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices.

Degree: PhD, Electrical Engineering, 2015, University of Southern California

GaAs has superior optical and electrical performance over silicon; however the Fermi level pinning effect at the surface depletes free carrier when scale down to… (more)

Subjects/Keywords: GaAs; nanosheet; MOCVD

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APA (6th Edition):

Chi, C. (2015). Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/533039/rec/2956

Chicago Manual of Style (16th Edition):

Chi, Chun-Yung. “Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices.” 2015. Doctoral Dissertation, University of Southern California. Accessed December 05, 2020. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/533039/rec/2956.

MLA Handbook (7th Edition):

Chi, Chun-Yung. “Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices.” 2015. Web. 05 Dec 2020.

Vancouver:

Chi C. Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices. [Internet] [Doctoral dissertation]. University of Southern California; 2015. [cited 2020 Dec 05]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/533039/rec/2956.

Council of Science Editors:

Chi C. Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices. [Doctoral Dissertation]. University of Southern California; 2015. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/533039/rec/2956

9. Matthew, Stavert. Gaming as a Service Research Assessment Toolkit.

Degree: 2018, Athabasca University

The purpose of this research is to design and determine the effectiveness of using a Gaming as a Service (GaaS) Research Assessment Toolkit to facilitate… (more)

Subjects/Keywords: Gaming as a Service; Cloud Gaming; Streaming Games; GaaS; GaaS Client; GaaS Server

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APA (6th Edition):

Matthew, S. (2018). Gaming as a Service Research Assessment Toolkit. (Thesis). Athabasca University. Retrieved from http://hdl.handle.net/10791/275

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Matthew, Stavert. “Gaming as a Service Research Assessment Toolkit.” 2018. Thesis, Athabasca University. Accessed December 05, 2020. http://hdl.handle.net/10791/275.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Matthew, Stavert. “Gaming as a Service Research Assessment Toolkit.” 2018. Web. 05 Dec 2020.

Vancouver:

Matthew S. Gaming as a Service Research Assessment Toolkit. [Internet] [Thesis]. Athabasca University; 2018. [cited 2020 Dec 05]. Available from: http://hdl.handle.net/10791/275.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Matthew S. Gaming as a Service Research Assessment Toolkit. [Thesis]. Athabasca University; 2018. Available from: http://hdl.handle.net/10791/275

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

10. Kuo, Ting-Huang. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.

Degree: Master, Electrical Engineering, 2008, NSYSU

 In this study, the characteristics of atomic layer deposited TiO2 films on Gallium Arsenide substrate were investigated. The physical and chemical properties were measured and… (more)

Subjects/Keywords: GaAs; ALD; TiO2; MOCVD

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APA (6th Edition):

Kuo, T. (2008). Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kuo, Ting-Huang. “Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.” 2008. Thesis, NSYSU. Accessed December 05, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kuo, Ting-Huang. “Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.” 2008. Web. 05 Dec 2020.

Vancouver:

Kuo T. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. [Internet] [Thesis]. NSYSU; 2008. [cited 2020 Dec 05]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kuo T. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

11. St-Arnaud, Ken. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau.

Degree: M. Sc. A., Génie électrique, 2015, Université de Sherbrooke

 Ce projet de recherche vise à caractériser l'influence de divers traitements de passivation de surface de l'arséniure de gallium (GaAs) sur les propriétés électriques et… (more)

Subjects/Keywords: GaAs; Optique; Surface; Passivation

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APA (6th Edition):

St-Arnaud, K. (2015). Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau. (Masters Thesis). Université de Sherbrooke. Retrieved from http://www.collectionscanada.gc.ca/obj/thesescanada/vol2/QSHERU/TC-QSHERU-11143_7723.pdf ; http://savoirs.usherbrooke.ca/bitstream/11143/7723/1/St_Arnaud_Ken_MSc_2015.pdf

Chicago Manual of Style (16th Edition):

St-Arnaud, Ken. “Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau.” 2015. Masters Thesis, Université de Sherbrooke. Accessed December 05, 2020. http://www.collectionscanada.gc.ca/obj/thesescanada/vol2/QSHERU/TC-QSHERU-11143_7723.pdf ; http://savoirs.usherbrooke.ca/bitstream/11143/7723/1/St_Arnaud_Ken_MSc_2015.pdf.

MLA Handbook (7th Edition):

St-Arnaud, Ken. “Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau.” 2015. Web. 05 Dec 2020.

Vancouver:

St-Arnaud K. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau. [Internet] [Masters thesis]. Université de Sherbrooke; 2015. [cited 2020 Dec 05]. Available from: http://www.collectionscanada.gc.ca/obj/thesescanada/vol2/QSHERU/TC-QSHERU-11143_7723.pdf ; http://savoirs.usherbrooke.ca/bitstream/11143/7723/1/St_Arnaud_Ken_MSc_2015.pdf.

Council of Science Editors:

St-Arnaud K. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau. [Masters Thesis]. Université de Sherbrooke; 2015. Available from: http://www.collectionscanada.gc.ca/obj/thesescanada/vol2/QSHERU/TC-QSHERU-11143_7723.pdf ; http://savoirs.usherbrooke.ca/bitstream/11143/7723/1/St_Arnaud_Ken_MSc_2015.pdf

12. Caface, Raphael Antonio. Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos.

Degree: Mestrado, Física Aplicada, 2015, University of São Paulo

Dispositivos fotovoltaicos híbridos baseados em polímeros conjugados e semicondutores inorgânicos estão sendo utilizados nos últimos anos para a produção de células de energia solar com… (more)

Subjects/Keywords: Conjugated polymers; Dispositivos eletrônicos; Electronic devices; Nanofios de GaAs/AlGaAs/GaAs; Nanowires of GaAs / AlGaAs / GaAs; Polímeros conjugados

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APA (6th Edition):

Caface, R. A. (2015). Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos. (Masters Thesis). University of São Paulo. Retrieved from http://www.teses.usp.br/teses/disponiveis/76/76132/tde-29092015-102955/ ;

Chicago Manual of Style (16th Edition):

Caface, Raphael Antonio. “Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos.” 2015. Masters Thesis, University of São Paulo. Accessed December 05, 2020. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-29092015-102955/ ;.

MLA Handbook (7th Edition):

Caface, Raphael Antonio. “Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos.” 2015. Web. 05 Dec 2020.

Vancouver:

Caface RA. Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos. [Internet] [Masters thesis]. University of São Paulo; 2015. [cited 2020 Dec 05]. Available from: http://www.teses.usp.br/teses/disponiveis/76/76132/tde-29092015-102955/ ;.

Council of Science Editors:

Caface RA. Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos. [Masters Thesis]. University of São Paulo; 2015. Available from: http://www.teses.usp.br/teses/disponiveis/76/76132/tde-29092015-102955/ ;

13. Mochiduki, Yasunori. A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究.

Degree: 工学博士, 2017, The University of Tokyo / 東京大学

Subjects/Keywords: EL2; GaAs

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APA (6th Edition):

Mochiduki, Y. (2017). A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究. (Thesis). The University of Tokyo / 東京大学. Retrieved from http://hdl.handle.net/2261/1788

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mochiduki, Yasunori. “A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究.” 2017. Thesis, The University of Tokyo / 東京大学. Accessed December 05, 2020. http://hdl.handle.net/2261/1788.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mochiduki, Yasunori. “A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究.” 2017. Web. 05 Dec 2020.

Vancouver:

Mochiduki Y. A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究. [Internet] [Thesis]. The University of Tokyo / 東京大学; 2017. [cited 2020 Dec 05]. Available from: http://hdl.handle.net/2261/1788.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mochiduki Y. A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究. [Thesis]. The University of Tokyo / 東京大学; 2017. Available from: http://hdl.handle.net/2261/1788

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Sherbrooke

14. St-Arnaud, Ken. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau.

Degree: 2015, Université de Sherbrooke

 Ce projet de recherche vise à caractériser l'influence de divers traitements de passivation de surface de l'arséniure de gallium (GaAs) sur les propriétés électriques et… (more)

Subjects/Keywords: GaAs; Optique; Surface; Passivation

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APA (6th Edition):

St-Arnaud, K. (2015). Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau. (Masters Thesis). Université de Sherbrooke. Retrieved from http://hdl.handle.net/11143/7723

Chicago Manual of Style (16th Edition):

St-Arnaud, Ken. “Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau.” 2015. Masters Thesis, Université de Sherbrooke. Accessed December 05, 2020. http://hdl.handle.net/11143/7723.

MLA Handbook (7th Edition):

St-Arnaud, Ken. “Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau.” 2015. Web. 05 Dec 2020.

Vancouver:

St-Arnaud K. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau. [Internet] [Masters thesis]. Université de Sherbrooke; 2015. [cited 2020 Dec 05]. Available from: http://hdl.handle.net/11143/7723.

Council of Science Editors:

St-Arnaud K. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau. [Masters Thesis]. Université de Sherbrooke; 2015. Available from: http://hdl.handle.net/11143/7723


University of Arizona

15. Gu, Baijie. Theory of Propagation and Manipulation of Excitons in GaAs Structures .

Degree: 2012, University of Arizona

 This dissertation presents research on the propagation and manipulation of excitons in GaAs. There are three main aspects to be addressed. In the first part,… (more)

Subjects/Keywords: semiconductors; Physics; excitons; GaAs

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APA (6th Edition):

Gu, B. (2012). Theory of Propagation and Manipulation of Excitons in GaAs Structures . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/268616

Chicago Manual of Style (16th Edition):

Gu, Baijie. “Theory of Propagation and Manipulation of Excitons in GaAs Structures .” 2012. Doctoral Dissertation, University of Arizona. Accessed December 05, 2020. http://hdl.handle.net/10150/268616.

MLA Handbook (7th Edition):

Gu, Baijie. “Theory of Propagation and Manipulation of Excitons in GaAs Structures .” 2012. Web. 05 Dec 2020.

Vancouver:

Gu B. Theory of Propagation and Manipulation of Excitons in GaAs Structures . [Internet] [Doctoral dissertation]. University of Arizona; 2012. [cited 2020 Dec 05]. Available from: http://hdl.handle.net/10150/268616.

Council of Science Editors:

Gu B. Theory of Propagation and Manipulation of Excitons in GaAs Structures . [Doctoral Dissertation]. University of Arizona; 2012. Available from: http://hdl.handle.net/10150/268616


University of New South Wales

16. Srinivasan, Ashwin. Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction.

Degree: Physics, 2014, University of New South Wales

 Quantum confined holes in GaAs offer the possibility of electrical spin manipulation via the spin-orbit interaction for the development of spintronic devices. This is a… (more)

Subjects/Keywords: GaAs; Hole; Spin; Quantum wire

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APA (6th Edition):

Srinivasan, A. (2014). Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/53785 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12484/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Srinivasan, Ashwin. “Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction.” 2014. Doctoral Dissertation, University of New South Wales. Accessed December 05, 2020. http://handle.unsw.edu.au/1959.4/53785 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12484/SOURCE02?view=true.

MLA Handbook (7th Edition):

Srinivasan, Ashwin. “Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction.” 2014. Web. 05 Dec 2020.

Vancouver:

Srinivasan A. Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction. [Internet] [Doctoral dissertation]. University of New South Wales; 2014. [cited 2020 Dec 05]. Available from: http://handle.unsw.edu.au/1959.4/53785 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12484/SOURCE02?view=true.

Council of Science Editors:

Srinivasan A. Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction. [Doctoral Dissertation]. University of New South Wales; 2014. Available from: http://handle.unsw.edu.au/1959.4/53785 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12484/SOURCE02?view=true


University of New South Wales

17. Yeoh, LaReine. Spin in Low Dimensional GaAs Hole Systems.

Degree: Physics, 2015, University of New South Wales

 There has been recent interest in quantum confined holes in GaAs semiconductors as they have potentialapplications in electrical spin manipulation via the spin-orbit interaction, for… (more)

Subjects/Keywords: GaAs; Semicondutors; Low termperature; Holes

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APA (6th Edition):

Yeoh, L. (2015). Spin in Low Dimensional GaAs Hole Systems. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/54708 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:35615/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Yeoh, LaReine. “Spin in Low Dimensional GaAs Hole Systems.” 2015. Doctoral Dissertation, University of New South Wales. Accessed December 05, 2020. http://handle.unsw.edu.au/1959.4/54708 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:35615/SOURCE02?view=true.

MLA Handbook (7th Edition):

Yeoh, LaReine. “Spin in Low Dimensional GaAs Hole Systems.” 2015. Web. 05 Dec 2020.

Vancouver:

Yeoh L. Spin in Low Dimensional GaAs Hole Systems. [Internet] [Doctoral dissertation]. University of New South Wales; 2015. [cited 2020 Dec 05]. Available from: http://handle.unsw.edu.au/1959.4/54708 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:35615/SOURCE02?view=true.

Council of Science Editors:

Yeoh L. Spin in Low Dimensional GaAs Hole Systems. [Doctoral Dissertation]. University of New South Wales; 2015. Available from: http://handle.unsw.edu.au/1959.4/54708 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:35615/SOURCE02?view=true

18. Cheng, Jun. Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers.

Degree: Docteur es, Marériaux pour la micro- et l'opto-électronique, 2010, Ecully, Ecole centrale de Lyon

L’intégration monolithique de matériaux III-V ou Ge sur Si est un enjeu majeur de l’hétéroépitaxie qui a donné lieu à de nombreuses recherches depuis plus… (more)

Subjects/Keywords: Semiconducteur III-V; InP; GaAs; Semiconductors; InP; GaAs

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APA (6th Edition):

Cheng, J. (2010). Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers. (Doctoral Dissertation). Ecully, Ecole centrale de Lyon. Retrieved from http://www.theses.fr/2010ECDL0024

Chicago Manual of Style (16th Edition):

Cheng, Jun. “Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers.” 2010. Doctoral Dissertation, Ecully, Ecole centrale de Lyon. Accessed December 05, 2020. http://www.theses.fr/2010ECDL0024.

MLA Handbook (7th Edition):

Cheng, Jun. “Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers.” 2010. Web. 05 Dec 2020.

Vancouver:

Cheng J. Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers. [Internet] [Doctoral dissertation]. Ecully, Ecole centrale de Lyon; 2010. [cited 2020 Dec 05]. Available from: http://www.theses.fr/2010ECDL0024.

Council of Science Editors:

Cheng J. Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers. [Doctoral Dissertation]. Ecully, Ecole centrale de Lyon; 2010. Available from: http://www.theses.fr/2010ECDL0024


Ohio University

19. Ho, Wai. GaAs MESFET modeling and its applications.

Degree: MS, Electrical Engineering & Computer Science (Engineering and Technology), 1993, Ohio University

GaAs MESFET modeling and its applications Advisors/Committee Members: Mokari, M. (Advisor).

Subjects/Keywords: GaAs MESFET modeling; MESFET; GaAs

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APA (6th Edition):

Ho, W. (1993). GaAs MESFET modeling and its applications. (Masters Thesis). Ohio University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072

Chicago Manual of Style (16th Edition):

Ho, Wai. “GaAs MESFET modeling and its applications.” 1993. Masters Thesis, Ohio University. Accessed December 05, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072.

MLA Handbook (7th Edition):

Ho, Wai. “GaAs MESFET modeling and its applications.” 1993. Web. 05 Dec 2020.

Vancouver:

Ho W. GaAs MESFET modeling and its applications. [Internet] [Masters thesis]. Ohio University; 1993. [cited 2020 Dec 05]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072.

Council of Science Editors:

Ho W. GaAs MESFET modeling and its applications. [Masters Thesis]. Ohio University; 1993. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072


University of New South Wales

20. Ullah, Abu Rifat. Phase-pure indium arsenide and p-type gallium arsenide nanowire devices.

Degree: Physics, 2018, University of New South Wales

 The advent of semiconducting nanowires has initiated research in many areas. The bottom-up growth can allows access to crystal phases which are unavailable in bulk… (more)

Subjects/Keywords: GaAs nanowire; Phase-pure nanowire; InAs nanowire device; p-GaAs device; Wurtzite; Zincblende; Polymer electrolyte; GaAs etching; MESFET

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APA (6th Edition):

Ullah, A. R. (2018). Phase-pure indium arsenide and p-type gallium arsenide nanowire devices. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Ullah, Abu Rifat. “Phase-pure indium arsenide and p-type gallium arsenide nanowire devices.” 2018. Doctoral Dissertation, University of New South Wales. Accessed December 05, 2020. http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true.

MLA Handbook (7th Edition):

Ullah, Abu Rifat. “Phase-pure indium arsenide and p-type gallium arsenide nanowire devices.” 2018. Web. 05 Dec 2020.

Vancouver:

Ullah AR. Phase-pure indium arsenide and p-type gallium arsenide nanowire devices. [Internet] [Doctoral dissertation]. University of New South Wales; 2018. [cited 2020 Dec 05]. Available from: http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true.

Council of Science Editors:

Ullah AR. Phase-pure indium arsenide and p-type gallium arsenide nanowire devices. [Doctoral Dissertation]. University of New South Wales; 2018. Available from: http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true


NSYSU

21. Lai, Chih-Ming. GaAs VCSEL Metallization and Characterization.

Degree: Master, Physics, 2000, NSYSU

 ãGaAs VCSEL Contact Process and Feature Analysis ãIn this article, we talk about the process of metalization on sample of epied GaAs VCSEL structure. We… (more)

Subjects/Keywords: EL; GaAs; VCSEL

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APA (6th Edition):

Lai, C. (2000). GaAs VCSEL Metallization and Characterization. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lai, Chih-Ming. “GaAs VCSEL Metallization and Characterization.” 2000. Thesis, NSYSU. Accessed December 05, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lai, Chih-Ming. “GaAs VCSEL Metallization and Characterization.” 2000. Web. 05 Dec 2020.

Vancouver:

Lai C. GaAs VCSEL Metallization and Characterization. [Internet] [Thesis]. NSYSU; 2000. [cited 2020 Dec 05]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lai C. GaAs VCSEL Metallization and Characterization. [Thesis]. NSYSU; 2000. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

22. Wu, Chin-shu. Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage.

Degree: Master, Physics, 2004, NSYSU

We discove the decrement,comparing the Electroreflectance spectroscopy of theforward biased voltage is 0.5V after the photon energy is 1.8eV.We discuss the case from Asymptotic form and the sample. Advisors/Committee Members: Der-Jun Jang (chair), Dong-Po Wang (committee member), I-Min Jiang (chair).

Subjects/Keywords: GaAs; Electroreflectance spectroscopy

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APA (6th Edition):

Wu, C. (2004). Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630104-163318

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Chin-shu. “Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage.” 2004. Thesis, NSYSU. Accessed December 05, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630104-163318.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Chin-shu. “Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage.” 2004. Web. 05 Dec 2020.

Vancouver:

Wu C. Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage. [Internet] [Thesis]. NSYSU; 2004. [cited 2020 Dec 05]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630104-163318.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu C. Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630104-163318

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

23. Chen, Ying-shiuan. The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs.

Degree: Master, Physics, 2004, NSYSU

 The electroreflectance (ER) of surface-intrinsic-n+ type doped GaAs has exhibited many Franz-Keldysh oscillations to enable the application of fast Fourier transform to separate the heavy… (more)

Subjects/Keywords: GaAs; electroreflectance spectroscopy

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APA (6th Edition):

Chen, Y. (2004). The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701104-150710

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Ying-shiuan. “The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs.” 2004. Thesis, NSYSU. Accessed December 05, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701104-150710.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Ying-shiuan. “The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs.” 2004. Web. 05 Dec 2020.

Vancouver:

Chen Y. The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs. [Internet] [Thesis]. NSYSU; 2004. [cited 2020 Dec 05]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701104-150710.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701104-150710

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

24. Huang, Shiuan-Hua. Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation.

Degree: Master, Electro-Optical Engineering, 2012, NSYSU

 In this thesis, a novel method for multi-pulse with equal chirp characteristics and more efficient THz generation through two photon absorption (TPA) are investigated and… (more)

Subjects/Keywords: LT-GaAs; THz; pulse shaper; TPA; PCA

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APA (6th Edition):

Huang, S. (2012). Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-110625

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Shiuan-Hua. “Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation.” 2012. Thesis, NSYSU. Accessed December 05, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-110625.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Shiuan-Hua. “Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation.” 2012. Web. 05 Dec 2020.

Vancouver:

Huang S. Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation. [Internet] [Thesis]. NSYSU; 2012. [cited 2020 Dec 05]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-110625.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang S. Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-110625

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Manchester

25. White, Daniel Philip. Ultra Low Noise Amplifiers for Future Radio Astronomy Observatories.

Degree: 2020, University of Manchester

In recent years, two distinct engineering challenges have been identified for Low Noise Amplifiers (LNAs) utilised in radio astronomy front-end receivers. There has been a… (more)

Subjects/Keywords: mmic; lna; low noise amplifier; gaas; inp

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APA (6th Edition):

White, D. P. (2020). Ultra Low Noise Amplifiers for Future Radio Astronomy Observatories. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:325054

Chicago Manual of Style (16th Edition):

White, Daniel Philip. “Ultra Low Noise Amplifiers for Future Radio Astronomy Observatories.” 2020. Doctoral Dissertation, University of Manchester. Accessed December 05, 2020. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:325054.

MLA Handbook (7th Edition):

White, Daniel Philip. “Ultra Low Noise Amplifiers for Future Radio Astronomy Observatories.” 2020. Web. 05 Dec 2020.

Vancouver:

White DP. Ultra Low Noise Amplifiers for Future Radio Astronomy Observatories. [Internet] [Doctoral dissertation]. University of Manchester; 2020. [cited 2020 Dec 05]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:325054.

Council of Science Editors:

White DP. Ultra Low Noise Amplifiers for Future Radio Astronomy Observatories. [Doctoral Dissertation]. University of Manchester; 2020. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:325054


McMaster University

26. Zhang, Junpeng. ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS.

Degree: MASc, 2014, McMaster University

III-V semiconductor nanowires (NWs) are often referred to as one-dimensional (1-D) materials because of their high aspect ratios and excellent quantum confinement properties. Spacing between… (more)

Subjects/Keywords: GaAs nanowire; ITO; Absorptance; Ohmic contact

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APA (6th Edition):

Zhang, J. (2014). ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS. (Masters Thesis). McMaster University. Retrieved from http://hdl.handle.net/11375/16364

Chicago Manual of Style (16th Edition):

Zhang, Junpeng. “ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS.” 2014. Masters Thesis, McMaster University. Accessed December 05, 2020. http://hdl.handle.net/11375/16364.

MLA Handbook (7th Edition):

Zhang, Junpeng. “ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS.” 2014. Web. 05 Dec 2020.

Vancouver:

Zhang J. ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS. [Internet] [Masters thesis]. McMaster University; 2014. [cited 2020 Dec 05]. Available from: http://hdl.handle.net/11375/16364.

Council of Science Editors:

Zhang J. ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS. [Masters Thesis]. McMaster University; 2014. Available from: http://hdl.handle.net/11375/16364


Texas A&M University

27. Adeyemi, Oluwafemi Ibukunoluwa. The design of GaAs HEMT and HBT Bessel-type transimpedance amplifiers.

Degree: MS, Electrical Engineering, 2007, Texas A&M University

 The need of the everyday user to transfer large amounts of data is driving the need for larger data transfer capacity. Optical communication networks can… (more)

Subjects/Keywords: Transimpedance Amplifier; GaAs

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APA (6th Edition):

Adeyemi, O. I. (2007). The design of GaAs HEMT and HBT Bessel-type transimpedance amplifiers. (Masters Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/4663

Chicago Manual of Style (16th Edition):

Adeyemi, Oluwafemi Ibukunoluwa. “The design of GaAs HEMT and HBT Bessel-type transimpedance amplifiers.” 2007. Masters Thesis, Texas A&M University. Accessed December 05, 2020. http://hdl.handle.net/1969.1/4663.

MLA Handbook (7th Edition):

Adeyemi, Oluwafemi Ibukunoluwa. “The design of GaAs HEMT and HBT Bessel-type transimpedance amplifiers.” 2007. Web. 05 Dec 2020.

Vancouver:

Adeyemi OI. The design of GaAs HEMT and HBT Bessel-type transimpedance amplifiers. [Internet] [Masters thesis]. Texas A&M University; 2007. [cited 2020 Dec 05]. Available from: http://hdl.handle.net/1969.1/4663.

Council of Science Editors:

Adeyemi OI. The design of GaAs HEMT and HBT Bessel-type transimpedance amplifiers. [Masters Thesis]. Texas A&M University; 2007. Available from: http://hdl.handle.net/1969.1/4663


University of Cambridge

28. Ramsay, Benjamin. 2D Electron Systems in Undoped GaAs and InGaAs and Progress Towards Undoped GaAs Nano-Structures.

Degree: PhD, 2020, University of Cambridge

 The MBE growth of high-quality GaAs/AlGaAs epilayer structures has enabled the study of novel physical phenomena, such as the Quantum Hall and Fractional Quantum Hall… (more)

Subjects/Keywords: GaAs; InGaAs; Electron Systems; 2D Electron Gas

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APA (6th Edition):

Ramsay, B. (2020). 2D Electron Systems in Undoped GaAs and InGaAs and Progress Towards Undoped GaAs Nano-Structures. (Doctoral Dissertation). University of Cambridge. Retrieved from https://www.repository.cam.ac.uk/handle/1810/309114

Chicago Manual of Style (16th Edition):

Ramsay, Benjamin. “2D Electron Systems in Undoped GaAs and InGaAs and Progress Towards Undoped GaAs Nano-Structures.” 2020. Doctoral Dissertation, University of Cambridge. Accessed December 05, 2020. https://www.repository.cam.ac.uk/handle/1810/309114.

MLA Handbook (7th Edition):

Ramsay, Benjamin. “2D Electron Systems in Undoped GaAs and InGaAs and Progress Towards Undoped GaAs Nano-Structures.” 2020. Web. 05 Dec 2020.

Vancouver:

Ramsay B. 2D Electron Systems in Undoped GaAs and InGaAs and Progress Towards Undoped GaAs Nano-Structures. [Internet] [Doctoral dissertation]. University of Cambridge; 2020. [cited 2020 Dec 05]. Available from: https://www.repository.cam.ac.uk/handle/1810/309114.

Council of Science Editors:

Ramsay B. 2D Electron Systems in Undoped GaAs and InGaAs and Progress Towards Undoped GaAs Nano-Structures. [Doctoral Dissertation]. University of Cambridge; 2020. Available from: https://www.repository.cam.ac.uk/handle/1810/309114


Australian National University

29. Haofeng, Lu. InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition .

Degree: 2016, Australian National University

 Along with the ongoing research and industry development to reduce the cost of conventional PV devices such as Si-based solar cells, significant research efforts have… (more)

Subjects/Keywords: InGaAs; GaAs; Quantum dot; Solar cell; MOCVD

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Haofeng, L. (2016). InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition . (Thesis). Australian National University. Retrieved from http://hdl.handle.net/1885/144321

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Haofeng, Lu. “InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition .” 2016. Thesis, Australian National University. Accessed December 05, 2020. http://hdl.handle.net/1885/144321.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Haofeng, Lu. “InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition .” 2016. Web. 05 Dec 2020.

Vancouver:

Haofeng L. InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition . [Internet] [Thesis]. Australian National University; 2016. [cited 2020 Dec 05]. Available from: http://hdl.handle.net/1885/144321.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Haofeng L. InGaAs/GaAs Quantum Dot Solar Cells by Metal Organic Chemical Vapour Deposition . [Thesis]. Australian National University; 2016. Available from: http://hdl.handle.net/1885/144321

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

30. Xiu Xing. Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications</h1>.

Degree: Electrical Engineering, 2013, University of Notre Dame

  In this work, wet thermal oxidation of epitaxially-grown InAlP in combination with a pseudomorphic high electron mobility In0.22Ga0.78As channel has been explored, as an… (more)

Subjects/Keywords: GaAs; MOSFET; Pseudomorphic; InAlP oxide; RF

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Xing, X. (2013). Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications</h1>. (Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/r494vh5694z

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Xing, Xiu. “Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications</h1>.” 2013. Thesis, University of Notre Dame. Accessed December 05, 2020. https://curate.nd.edu/show/r494vh5694z.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Xing, Xiu. “Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications</h1>.” 2013. Web. 05 Dec 2020.

Vancouver:

Xing X. Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications</h1>. [Internet] [Thesis]. University of Notre Dame; 2013. [cited 2020 Dec 05]. Available from: https://curate.nd.edu/show/r494vh5694z.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Xing X. Pseudomorphic In0.22Ga0.78As-Channel MOSFETs Using InAlP Oxide as the Gate Dielectric for RF Applications</h1>. [Thesis]. University of Notre Dame; 2013. Available from: https://curate.nd.edu/show/r494vh5694z

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2] [3] [4] [5] … [14]

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