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You searched for subject:(GaAs). Showing records 1 – 30 of 378 total matches.

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1. Guan, Xin. Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Modelization of dry friction damping in assembled structures.

Degree: Docteur es, Physique des matériaux, 2017, Lyon

L’objectif de cette thèse est de développer un réseau de nanofils GaAs (coeur) / oxyde (coquille) pour la photoélectrolyse de l'eau. Pour cela, la géométrie… (more)

Subjects/Keywords: Nanofils GaAs; Nanowires GaAs

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Guan, X. (2017). Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Modelization of dry friction damping in assembled structures. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2017LYSEC057

Chicago Manual of Style (16th Edition):

Guan, Xin. “Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Modelization of dry friction damping in assembled structures.” 2017. Doctoral Dissertation, Lyon. Accessed October 22, 2019. http://www.theses.fr/2017LYSEC057.

MLA Handbook (7th Edition):

Guan, Xin. “Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Modelization of dry friction damping in assembled structures.” 2017. Web. 22 Oct 2019.

Vancouver:

Guan X. Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Modelization of dry friction damping in assembled structures. [Internet] [Doctoral dissertation]. Lyon; 2017. [cited 2019 Oct 22]. Available from: http://www.theses.fr/2017LYSEC057.

Council of Science Editors:

Guan X. Growth of semiconductor ( core) / functional oxide ( shell) nanowires : application to photoelectrochemical water splitting : Modelization of dry friction damping in assembled structures. [Doctoral Dissertation]. Lyon; 2017. Available from: http://www.theses.fr/2017LYSEC057

2. Becdelievre, Jeanne. Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : Interaction entre supraconductivité et ferromagnétisme.

Degree: Docteur es, Physique des matériaux, 2017, Lyon

L’objectif de cette thèse est de moduler le transport électrique dans des nanofils de GaAs par effet piézoélectrique ou ferroélectrique. Pour cela, une étude préliminaire… (more)

Subjects/Keywords: Nanofils de GaAs; GaAs nanowires

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APA (6th Edition):

Becdelievre, J. (2017). Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : Interaction entre supraconductivité et ferromagnétisme. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2017LYSEC041

Chicago Manual of Style (16th Edition):

Becdelievre, Jeanne. “Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : Interaction entre supraconductivité et ferromagnétisme.” 2017. Doctoral Dissertation, Lyon. Accessed October 22, 2019. http://www.theses.fr/2017LYSEC041.

MLA Handbook (7th Edition):

Becdelievre, Jeanne. “Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : Interaction entre supraconductivité et ferromagnétisme.” 2017. Web. 22 Oct 2019.

Vancouver:

Becdelievre J. Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : Interaction entre supraconductivité et ferromagnétisme. [Internet] [Doctoral dissertation]. Lyon; 2017. [cited 2019 Oct 22]. Available from: http://www.theses.fr/2017LYSEC041.

Council of Science Editors:

Becdelievre J. Etude des propriétés électriques et mécaniques de nanofils de GaAs : vers une modulation du transport par effet piézoélectrique ou ferroélectrique : Interaction entre supraconductivité et ferromagnétisme. [Doctoral Dissertation]. Lyon; 2017. Available from: http://www.theses.fr/2017LYSEC041


University of Manchester

3. Chanlek, Narong. Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator.

Degree: 2012, University of Manchester

 This thesis describes the development of a gallium arsenide (GaAs) photocathode preparation facility (PPF) with a load-lock interface as part of an upgrade to the… (more)

Subjects/Keywords: GaAs photocathode

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APA (6th Edition):

Chanlek, N. (2012). Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:146224

Chicago Manual of Style (16th Edition):

Chanlek, Narong. “Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator.” 2012. Doctoral Dissertation, University of Manchester. Accessed October 22, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:146224.

MLA Handbook (7th Edition):

Chanlek, Narong. “Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator.” 2012. Web. 22 Oct 2019.

Vancouver:

Chanlek N. Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator. [Internet] [Doctoral dissertation]. University of Manchester; 2012. [cited 2019 Oct 22]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:146224.

Council of Science Editors:

Chanlek N. Quantum Efficiency Lifetime Studies using the Photocathode Preparation Experimental Facility Developed for the ALICE Accelerator. [Doctoral Dissertation]. University of Manchester; 2012. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:146224


University of New South Wales

4. Macleod, Sarah. A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors.

Degree: Physics, 2015, University of New South Wales

 Semiconductor-insulator-semiconductor field effect transistor (SISFET) devices have a simpler disorder environment at low temperature (< 300mK) than other MBE-grown GaAs/AlGaAs heterostructures, and SISFET devices can… (more)

Subjects/Keywords: GaAs; SISFET

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APA (6th Edition):

Macleod, S. (2015). A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/55183 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:36702/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Macleod, Sarah. “A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors.” 2015. Doctoral Dissertation, University of New South Wales. Accessed October 22, 2019. http://handle.unsw.edu.au/1959.4/55183 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:36702/SOURCE02?view=true.

MLA Handbook (7th Edition):

Macleod, Sarah. “A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors.” 2015. Web. 22 Oct 2019.

Vancouver:

Macleod S. A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors. [Internet] [Doctoral dissertation]. University of New South Wales; 2015. [cited 2019 Oct 22]. Available from: http://handle.unsw.edu.au/1959.4/55183 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:36702/SOURCE02?view=true.

Council of Science Editors:

Macleod S. A study of GaAs/AlGaAs Semiconductor-Insulator- Semiconductor Field Effect Transistors. [Doctoral Dissertation]. University of New South Wales; 2015. Available from: http://handle.unsw.edu.au/1959.4/55183 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:36702/SOURCE02?view=true


NSYSU

5. Chen, Da-Ching. Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide.

Degree: Master, Electrical Engineering, 2009, NSYSU

 Due to the high electron mobility compared with Si, III-V compound semiconductors (GaAs) has been applied widely for high-speed devices. The titanium oxide (TiO2) has… (more)

Subjects/Keywords: TiO2; GaAs; ALD

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APA (6th Edition):

Chen, D. (2009). Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Da-Ching. “Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide.” 2009. Thesis, NSYSU. Accessed October 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Da-Ching. “Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide.” 2009. Web. 22 Oct 2019.

Vancouver:

Chen D. Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Oct 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen D. Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

6. Chang, Chih-Chong. Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy.

Degree: Master, Physics, 2012, NSYSU

 Semiconductor band-gap energy can be measured by using photoreflectance (PR) spectroscopy. It used a pump-beam and a probe-beam and measure modulated reflectance (DR) of the… (more)

Subjects/Keywords: GaAs; transition; photoreflectance

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APA (6th Edition):

Chang, C. (2012). Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-165625

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Chih-Chong. “Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy.” 2012. Thesis, NSYSU. Accessed October 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-165625.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Chih-Chong. “Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy.” 2012. Web. 22 Oct 2019.

Vancouver:

Chang C. Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 Oct 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-165625.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang C. Observation of E_1 and E_1+∆E_1 transitions of GaAs by exciting E_0 transition in photoreflectance spectroscopy. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-165625

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Manchester

7. Chanlek, Narong. Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator.

Degree: PhD, 2012, University of Manchester

 This thesis describes the development of a gallium arsenide (GaAs) photocathode preparation facility (PPF) with a load-lock interface as part of an upgrade to the… (more)

Subjects/Keywords: 535; GaAs photocathode

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chanlek, N. (2012). Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/quantum-efficiency-lifetime-studies-using-the-photocathode-preparation-experimental-facility-developed-for-the-alice-accelerator(197791f0-518e-4257-aa0e-04f9942b4110).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549031

Chicago Manual of Style (16th Edition):

Chanlek, Narong. “Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator.” 2012. Doctoral Dissertation, University of Manchester. Accessed October 22, 2019. https://www.research.manchester.ac.uk/portal/en/theses/quantum-efficiency-lifetime-studies-using-the-photocathode-preparation-experimental-facility-developed-for-the-alice-accelerator(197791f0-518e-4257-aa0e-04f9942b4110).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549031.

MLA Handbook (7th Edition):

Chanlek, Narong. “Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator.” 2012. Web. 22 Oct 2019.

Vancouver:

Chanlek N. Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator. [Internet] [Doctoral dissertation]. University of Manchester; 2012. [cited 2019 Oct 22]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/quantum-efficiency-lifetime-studies-using-the-photocathode-preparation-experimental-facility-developed-for-the-alice-accelerator(197791f0-518e-4257-aa0e-04f9942b4110).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549031.

Council of Science Editors:

Chanlek N. Quantum efficiency lifetime studies using the photocathode preparation experimental facility developed for the ALICE Accelerator. [Doctoral Dissertation]. University of Manchester; 2012. Available from: https://www.research.manchester.ac.uk/portal/en/theses/quantum-efficiency-lifetime-studies-using-the-photocathode-preparation-experimental-facility-developed-for-the-alice-accelerator(197791f0-518e-4257-aa0e-04f9942b4110).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.549031


University of Southern California

8. Chi, Chun-Yung. Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices.

Degree: PhD, Electrical Engineering, 2015, University of Southern California

GaAs has superior optical and electrical performance over silicon; however the Fermi level pinning effect at the surface depletes free carrier when scale down to… (more)

Subjects/Keywords: GaAs; nanosheet; MOCVD

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APA (6th Edition):

Chi, C. (2015). Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/533039/rec/2952

Chicago Manual of Style (16th Edition):

Chi, Chun-Yung. “Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices.” 2015. Doctoral Dissertation, University of Southern California. Accessed October 22, 2019. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/533039/rec/2952.

MLA Handbook (7th Edition):

Chi, Chun-Yung. “Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices.” 2015. Web. 22 Oct 2019.

Vancouver:

Chi C. Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices. [Internet] [Doctoral dissertation]. University of Southern California; 2015. [cited 2019 Oct 22]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/533039/rec/2952.

Council of Science Editors:

Chi C. Gallium arsenide nanosheets: study of stacking-fault-free nano-structure and its applications on semiconductor devices. [Doctoral Dissertation]. University of Southern California; 2015. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/533039/rec/2952

9. Matthew, Stavert. Gaming as a Service Research Assessment Toolkit.

Degree: 2018, Athabasca University

The purpose of this research is to design and determine the effectiveness of using a Gaming as a Service (GaaS) Research Assessment Toolkit to facilitate… (more)

Subjects/Keywords: Gaming as a Service; Cloud Gaming; Streaming Games; GaaS; GaaS Client; GaaS Server

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APA (6th Edition):

Matthew, S. (2018). Gaming as a Service Research Assessment Toolkit. (Thesis). Athabasca University. Retrieved from http://hdl.handle.net/10791/275

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Matthew, Stavert. “Gaming as a Service Research Assessment Toolkit.” 2018. Thesis, Athabasca University. Accessed October 22, 2019. http://hdl.handle.net/10791/275.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Matthew, Stavert. “Gaming as a Service Research Assessment Toolkit.” 2018. Web. 22 Oct 2019.

Vancouver:

Matthew S. Gaming as a Service Research Assessment Toolkit. [Internet] [Thesis]. Athabasca University; 2018. [cited 2019 Oct 22]. Available from: http://hdl.handle.net/10791/275.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Matthew S. Gaming as a Service Research Assessment Toolkit. [Thesis]. Athabasca University; 2018. Available from: http://hdl.handle.net/10791/275

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

10. St-Arnaud, Ken. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau.

Degree: M. Sc. A., Génie électrique, 2015, Université de Sherbrooke

 Ce projet de recherche vise à caractériser l'influence de divers traitements de passivation de surface de l'arséniure de gallium (GaAs) sur les propriétés électriques et… (more)

Subjects/Keywords: GaAs; Optique; Surface; Passivation

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APA (6th Edition):

St-Arnaud, K. (2015). Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau. (Masters Thesis). Université de Sherbrooke. Retrieved from http://www.collectionscanada.gc.ca/obj/thesescanada/vol2/QSHERU/TC-QSHERU-11143_7723.pdf ; http://savoirs.usherbrooke.ca/bitstream/11143/7723/1/St_Arnaud_Ken_MSc_2015.pdf

Chicago Manual of Style (16th Edition):

St-Arnaud, Ken. “Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau.” 2015. Masters Thesis, Université de Sherbrooke. Accessed October 22, 2019. http://www.collectionscanada.gc.ca/obj/thesescanada/vol2/QSHERU/TC-QSHERU-11143_7723.pdf ; http://savoirs.usherbrooke.ca/bitstream/11143/7723/1/St_Arnaud_Ken_MSc_2015.pdf.

MLA Handbook (7th Edition):

St-Arnaud, Ken. “Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau.” 2015. Web. 22 Oct 2019.

Vancouver:

St-Arnaud K. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau. [Internet] [Masters thesis]. Université de Sherbrooke; 2015. [cited 2019 Oct 22]. Available from: http://www.collectionscanada.gc.ca/obj/thesescanada/vol2/QSHERU/TC-QSHERU-11143_7723.pdf ; http://savoirs.usherbrooke.ca/bitstream/11143/7723/1/St_Arnaud_Ken_MSc_2015.pdf.

Council of Science Editors:

St-Arnaud K. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau. [Masters Thesis]. Université de Sherbrooke; 2015. Available from: http://www.collectionscanada.gc.ca/obj/thesescanada/vol2/QSHERU/TC-QSHERU-11143_7723.pdf ; http://savoirs.usherbrooke.ca/bitstream/11143/7723/1/St_Arnaud_Ken_MSc_2015.pdf

11. Caface, Raphael Antonio. Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos.

Degree: Mestrado, Física Aplicada, 2015, University of São Paulo

Dispositivos fotovoltaicos híbridos baseados em polímeros conjugados e semicondutores inorgânicos estão sendo utilizados nos últimos anos para a produção de células de energia solar com… (more)

Subjects/Keywords: Conjugated polymers; Dispositivos eletrônicos; Electronic devices; Nanofios de GaAs/AlGaAs/GaAs; Nanowires of GaAs / AlGaAs / GaAs; Polímeros conjugados

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APA (6th Edition):

Caface, R. A. (2015). Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos. (Masters Thesis). University of São Paulo. Retrieved from http://www.teses.usp.br/teses/disponiveis/76/76132/tde-29092015-102955/ ;

Chicago Manual of Style (16th Edition):

Caface, Raphael Antonio. “Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos.” 2015. Masters Thesis, University of São Paulo. Accessed October 22, 2019. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-29092015-102955/ ;.

MLA Handbook (7th Edition):

Caface, Raphael Antonio. “Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos.” 2015. Web. 22 Oct 2019.

Vancouver:

Caface RA. Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos. [Internet] [Masters thesis]. University of São Paulo; 2015. [cited 2019 Oct 22]. Available from: http://www.teses.usp.br/teses/disponiveis/76/76132/tde-29092015-102955/ ;.

Council of Science Editors:

Caface RA. Processos ópticos em semicondutores híbridos formados por nanofios heteroestruturados de AlGaAs/GaAs e polímero conjugado com potencial aplicação em dispositivos fotovoltaicos. [Masters Thesis]. University of São Paulo; 2015. Available from: http://www.teses.usp.br/teses/disponiveis/76/76132/tde-29092015-102955/ ;


NSYSU

12. Kuo, Ting-Huang. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.

Degree: Master, Electrical Engineering, 2008, NSYSU

 In this study, the characteristics of atomic layer deposited TiO2 films on Gallium Arsenide substrate were investigated. The physical and chemical properties were measured and… (more)

Subjects/Keywords: GaAs; ALD; TiO2; MOCVD

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APA (6th Edition):

Kuo, T. (2008). Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kuo, Ting-Huang. “Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.” 2008. Thesis, NSYSU. Accessed October 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kuo, Ting-Huang. “Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.” 2008. Web. 22 Oct 2019.

Vancouver:

Kuo T. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Oct 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kuo T. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Sherbrooke

13. St-Arnaud, Ken. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau .

Degree: 2015, Université de Sherbrooke

 Ce projet de recherche vise à caractériser l'influence de divers traitements de passivation de surface de l'arséniure de gallium (GaAs) sur les propriétés électriques et… (more)

Subjects/Keywords: GaAs; Optique; Surface; Passivation

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APA (6th Edition):

St-Arnaud, K. (2015). Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau . (Masters Thesis). Université de Sherbrooke. Retrieved from http://hdl.handle.net/11143/7723

Chicago Manual of Style (16th Edition):

St-Arnaud, Ken. “Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau .” 2015. Masters Thesis, Université de Sherbrooke. Accessed October 22, 2019. http://hdl.handle.net/11143/7723.

MLA Handbook (7th Edition):

St-Arnaud, Ken. “Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau .” 2015. Web. 22 Oct 2019.

Vancouver:

St-Arnaud K. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau . [Internet] [Masters thesis]. Université de Sherbrooke; 2015. [cited 2019 Oct 22]. Available from: http://hdl.handle.net/11143/7723.

Council of Science Editors:

St-Arnaud K. Traitements de passivation des surfaces de l'arséniure de gallium et impact sur les propriétés électro-optiques de ce matériau . [Masters Thesis]. Université de Sherbrooke; 2015. Available from: http://hdl.handle.net/11143/7723

14. Mochiduki, Yasunori. A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究.

Degree: 工学博士, 2017, The University of Tokyo / 東京大学

Subjects/Keywords: EL2; GaAs

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APA (6th Edition):

Mochiduki, Y. (2017). A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究. (Thesis). The University of Tokyo / 東京大学. Retrieved from http://hdl.handle.net/2261/1788

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mochiduki, Yasunori. “A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究.” 2017. Thesis, The University of Tokyo / 東京大学. Accessed October 22, 2019. http://hdl.handle.net/2261/1788.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mochiduki, Yasunori. “A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究.” 2017. Web. 22 Oct 2019.

Vancouver:

Mochiduki Y. A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究. [Internet] [Thesis]. The University of Tokyo / 東京大学; 2017. [cited 2019 Oct 22]. Available from: http://hdl.handle.net/2261/1788.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mochiduki Y. A STUDY ON THE MIDGAP LEVEL (EL2) IN GaAs : GaAs 中のミッドギャップレベル(EL2)に関する研究. [Thesis]. The University of Tokyo / 東京大学; 2017. Available from: http://hdl.handle.net/2261/1788

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New South Wales

15. Srinivasan, Ashwin. Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction.

Degree: Physics, 2014, University of New South Wales

 Quantum confined holes in GaAs offer the possibility of electrical spin manipulation via the spin-orbit interaction for the development of spintronic devices. This is a… (more)

Subjects/Keywords: GaAs; Hole; Spin; Quantum wire

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APA (6th Edition):

Srinivasan, A. (2014). Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/53785 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12484/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Srinivasan, Ashwin. “Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction.” 2014. Doctoral Dissertation, University of New South Wales. Accessed October 22, 2019. http://handle.unsw.edu.au/1959.4/53785 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12484/SOURCE02?view=true.

MLA Handbook (7th Edition):

Srinivasan, Ashwin. “Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction.” 2014. Web. 22 Oct 2019.

Vancouver:

Srinivasan A. Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction. [Internet] [Doctoral dissertation]. University of New South Wales; 2014. [cited 2019 Oct 22]. Available from: http://handle.unsw.edu.au/1959.4/53785 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12484/SOURCE02?view=true.

Council of Science Editors:

Srinivasan A. Spin splitting of one dimensional GaAs hole systems with strong spin-orbit interaction. [Doctoral Dissertation]. University of New South Wales; 2014. Available from: http://handle.unsw.edu.au/1959.4/53785 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:12484/SOURCE02?view=true


University of Florida

16. Barrett, Caleb S. Investigation of Antiphase Domain Boundary Energetics in GaAs-on-Si(001).

Degree: PhD, Materials Science and Engineering, 2017, University of Florida

GaAs was once called the material of the future for the semiconductor industry. Significant effort was directed towards the integration of high-performance GaAs on large… (more)

Subjects/Keywords: antiphase  – defects  – epitaxy  – gaas  – semiconductors

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APA (6th Edition):

Barrett, C. S. (2017). Investigation of Antiphase Domain Boundary Energetics in GaAs-on-Si(001). (Doctoral Dissertation). University of Florida. Retrieved from http://ufdc.ufl.edu/UFE0051318

Chicago Manual of Style (16th Edition):

Barrett, Caleb S. “Investigation of Antiphase Domain Boundary Energetics in GaAs-on-Si(001).” 2017. Doctoral Dissertation, University of Florida. Accessed October 22, 2019. http://ufdc.ufl.edu/UFE0051318.

MLA Handbook (7th Edition):

Barrett, Caleb S. “Investigation of Antiphase Domain Boundary Energetics in GaAs-on-Si(001).” 2017. Web. 22 Oct 2019.

Vancouver:

Barrett CS. Investigation of Antiphase Domain Boundary Energetics in GaAs-on-Si(001). [Internet] [Doctoral dissertation]. University of Florida; 2017. [cited 2019 Oct 22]. Available from: http://ufdc.ufl.edu/UFE0051318.

Council of Science Editors:

Barrett CS. Investigation of Antiphase Domain Boundary Energetics in GaAs-on-Si(001). [Doctoral Dissertation]. University of Florida; 2017. Available from: http://ufdc.ufl.edu/UFE0051318


University of New South Wales

17. Ho, Lap-hang. Single-layer transport measurements of bilayer 2D electron and hole systems in GaAs heterostructures.

Degree: Physics, 2010, University of New South Wales

 In this thesis we have studied bilayer two-dimensional (2D) electron and hole systems in GaAs. The work consists of three experimental studies, which involve low… (more)

Subjects/Keywords: GaAs; Bilayer; 2D systems

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APA (6th Edition):

Ho, L. (2010). Single-layer transport measurements of bilayer 2D electron and hole systems in GaAs heterostructures. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/50348 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9229/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Ho, Lap-hang. “Single-layer transport measurements of bilayer 2D electron and hole systems in GaAs heterostructures.” 2010. Doctoral Dissertation, University of New South Wales. Accessed October 22, 2019. http://handle.unsw.edu.au/1959.4/50348 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9229/SOURCE02?view=true.

MLA Handbook (7th Edition):

Ho, Lap-hang. “Single-layer transport measurements of bilayer 2D electron and hole systems in GaAs heterostructures.” 2010. Web. 22 Oct 2019.

Vancouver:

Ho L. Single-layer transport measurements of bilayer 2D electron and hole systems in GaAs heterostructures. [Internet] [Doctoral dissertation]. University of New South Wales; 2010. [cited 2019 Oct 22]. Available from: http://handle.unsw.edu.au/1959.4/50348 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9229/SOURCE02?view=true.

Council of Science Editors:

Ho L. Single-layer transport measurements of bilayer 2D electron and hole systems in GaAs heterostructures. [Doctoral Dissertation]. University of New South Wales; 2010. Available from: http://handle.unsw.edu.au/1959.4/50348 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9229/SOURCE02?view=true


University of New South Wales

18. Yeoh, LaReine. Spin in Low Dimensional GaAs Hole Systems.

Degree: Physics, 2015, University of New South Wales

 There has been recent interest in quantum confined holes in GaAs semiconductors as they have potentialapplications in electrical spin manipulation via the spin-orbit interaction, for… (more)

Subjects/Keywords: GaAs; Semicondutors; Low termperature; Holes

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APA (6th Edition):

Yeoh, L. (2015). Spin in Low Dimensional GaAs Hole Systems. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/54708 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:35615/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Yeoh, LaReine. “Spin in Low Dimensional GaAs Hole Systems.” 2015. Doctoral Dissertation, University of New South Wales. Accessed October 22, 2019. http://handle.unsw.edu.au/1959.4/54708 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:35615/SOURCE02?view=true.

MLA Handbook (7th Edition):

Yeoh, LaReine. “Spin in Low Dimensional GaAs Hole Systems.” 2015. Web. 22 Oct 2019.

Vancouver:

Yeoh L. Spin in Low Dimensional GaAs Hole Systems. [Internet] [Doctoral dissertation]. University of New South Wales; 2015. [cited 2019 Oct 22]. Available from: http://handle.unsw.edu.au/1959.4/54708 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:35615/SOURCE02?view=true.

Council of Science Editors:

Yeoh L. Spin in Low Dimensional GaAs Hole Systems. [Doctoral Dissertation]. University of New South Wales; 2015. Available from: http://handle.unsw.edu.au/1959.4/54708 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:35615/SOURCE02?view=true


University of Arizona

19. Gu, Baijie. Theory of Propagation and Manipulation of Excitons in GaAs Structures .

Degree: 2012, University of Arizona

 This dissertation presents research on the propagation and manipulation of excitons in GaAs. There are three main aspects to be addressed. In the first part,… (more)

Subjects/Keywords: semiconductors; Physics; excitons; GaAs

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APA (6th Edition):

Gu, B. (2012). Theory of Propagation and Manipulation of Excitons in GaAs Structures . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/268616

Chicago Manual of Style (16th Edition):

Gu, Baijie. “Theory of Propagation and Manipulation of Excitons in GaAs Structures .” 2012. Doctoral Dissertation, University of Arizona. Accessed October 22, 2019. http://hdl.handle.net/10150/268616.

MLA Handbook (7th Edition):

Gu, Baijie. “Theory of Propagation and Manipulation of Excitons in GaAs Structures .” 2012. Web. 22 Oct 2019.

Vancouver:

Gu B. Theory of Propagation and Manipulation of Excitons in GaAs Structures . [Internet] [Doctoral dissertation]. University of Arizona; 2012. [cited 2019 Oct 22]. Available from: http://hdl.handle.net/10150/268616.

Council of Science Editors:

Gu B. Theory of Propagation and Manipulation of Excitons in GaAs Structures . [Doctoral Dissertation]. University of Arizona; 2012. Available from: http://hdl.handle.net/10150/268616


Ohio University

20. Ho, Wai. GaAs MESFET modeling and its applications.

Degree: MS, Electrical Engineering & Computer Science (Engineering and Technology), 1993, Ohio University

GaAs MESFET modeling and its applications Advisors/Committee Members: Mokari, M. (Advisor).

Subjects/Keywords: GaAs MESFET modeling; MESFET; GaAs

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APA (6th Edition):

Ho, W. (1993). GaAs MESFET modeling and its applications. (Masters Thesis). Ohio University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072

Chicago Manual of Style (16th Edition):

Ho, Wai. “GaAs MESFET modeling and its applications.” 1993. Masters Thesis, Ohio University. Accessed October 22, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072.

MLA Handbook (7th Edition):

Ho, Wai. “GaAs MESFET modeling and its applications.” 1993. Web. 22 Oct 2019.

Vancouver:

Ho W. GaAs MESFET modeling and its applications. [Internet] [Masters thesis]. Ohio University; 1993. [cited 2019 Oct 22]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072.

Council of Science Editors:

Ho W. GaAs MESFET modeling and its applications. [Masters Thesis]. Ohio University; 1993. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1175707072

21. Cheng, Jun. Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers.

Degree: Docteur es, Marériaux pour la micro- et l'opto-électronique, 2010, Ecully, Ecole centrale de Lyon

L’intégration monolithique de matériaux III-V ou Ge sur Si est un enjeu majeur de l’hétéroépitaxie qui a donné lieu à de nombreuses recherches depuis plus… (more)

Subjects/Keywords: Semiconducteur III-V; InP; GaAs; Semiconductors; InP; GaAs

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APA (6th Edition):

Cheng, J. (2010). Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers. (Doctoral Dissertation). Ecully, Ecole centrale de Lyon. Retrieved from http://www.theses.fr/2010ECDL0024

Chicago Manual of Style (16th Edition):

Cheng, Jun. “Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers.” 2010. Doctoral Dissertation, Ecully, Ecole centrale de Lyon. Accessed October 22, 2019. http://www.theses.fr/2010ECDL0024.

MLA Handbook (7th Edition):

Cheng, Jun. “Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers.” 2010. Web. 22 Oct 2019.

Vancouver:

Cheng J. Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers. [Internet] [Doctoral dissertation]. Ecully, Ecole centrale de Lyon; 2010. [cited 2019 Oct 22]. Available from: http://www.theses.fr/2010ECDL0024.

Council of Science Editors:

Cheng J. Intégration monolithique de matériaux III-V et de Ge sur Si en utilisant des buffers oxydes cristallins : Monolithic integration of semiconductor III-V and Ge on Si by using crystalline oxide buffers. [Doctoral Dissertation]. Ecully, Ecole centrale de Lyon; 2010. Available from: http://www.theses.fr/2010ECDL0024


University of New South Wales

22. Ullah, Abu Rifat. Phase-pure indium arsenide and p-type gallium arsenide nanowire devices.

Degree: Physics, 2018, University of New South Wales

 The advent of semiconducting nanowires has initiated research in many areas. The bottom-up growth can allows access to crystal phases which are unavailable in bulk… (more)

Subjects/Keywords: GaAs nanowire; Phase-pure nanowire; InAs nanowire device; p-GaAs device; Wurtzite; Zincblende; Polymer electrolyte; GaAs etching; MESFET

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APA (6th Edition):

Ullah, A. R. (2018). Phase-pure indium arsenide and p-type gallium arsenide nanowire devices. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Ullah, Abu Rifat. “Phase-pure indium arsenide and p-type gallium arsenide nanowire devices.” 2018. Doctoral Dissertation, University of New South Wales. Accessed October 22, 2019. http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true.

MLA Handbook (7th Edition):

Ullah, Abu Rifat. “Phase-pure indium arsenide and p-type gallium arsenide nanowire devices.” 2018. Web. 22 Oct 2019.

Vancouver:

Ullah AR. Phase-pure indium arsenide and p-type gallium arsenide nanowire devices. [Internet] [Doctoral dissertation]. University of New South Wales; 2018. [cited 2019 Oct 22]. Available from: http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true.

Council of Science Editors:

Ullah AR. Phase-pure indium arsenide and p-type gallium arsenide nanowire devices. [Doctoral Dissertation]. University of New South Wales; 2018. Available from: http://handle.unsw.edu.au/1959.4/59566 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:48873/SOURCE02?view=true


Texas A&M University

23. Adeyemi, Oluwafemi Ibukunoluwa. The design of GaAs HEMT and HBT Bessel-type transimpedance amplifiers.

Degree: 2007, Texas A&M University

 The need of the everyday user to transfer large amounts of data is driving the need for larger data transfer capacity. Optical communication networks can… (more)

Subjects/Keywords: Transimpedance Amplifier; GaAs

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APA (6th Edition):

Adeyemi, O. I. (2007). The design of GaAs HEMT and HBT Bessel-type transimpedance amplifiers. (Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/4663

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Adeyemi, Oluwafemi Ibukunoluwa. “The design of GaAs HEMT and HBT Bessel-type transimpedance amplifiers.” 2007. Thesis, Texas A&M University. Accessed October 22, 2019. http://hdl.handle.net/1969.1/4663.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Adeyemi, Oluwafemi Ibukunoluwa. “The design of GaAs HEMT and HBT Bessel-type transimpedance amplifiers.” 2007. Web. 22 Oct 2019.

Vancouver:

Adeyemi OI. The design of GaAs HEMT and HBT Bessel-type transimpedance amplifiers. [Internet] [Thesis]. Texas A&M University; 2007. [cited 2019 Oct 22]. Available from: http://hdl.handle.net/1969.1/4663.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Adeyemi OI. The design of GaAs HEMT and HBT Bessel-type transimpedance amplifiers. [Thesis]. Texas A&M University; 2007. Available from: http://hdl.handle.net/1969.1/4663

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


The Ohio State University

24. Lee, Donghun. Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors.

Degree: PhD, Physics, 2010, The Ohio State University

 Here we demonstrate the realization of an atomic-scale gate electrode, formed by a charged As vacancy in the GaAs(110) surface. A custom-built low temperature scanning… (more)

Subjects/Keywords: Physics; Charged vacancy; Single dopant; GaAs

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APA (6th Edition):

Lee, D. (2010). Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1274913629

Chicago Manual of Style (16th Edition):

Lee, Donghun. “Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors.” 2010. Doctoral Dissertation, The Ohio State University. Accessed October 22, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1274913629.

MLA Handbook (7th Edition):

Lee, Donghun. “Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors.” 2010. Web. 22 Oct 2019.

Vancouver:

Lee D. Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors. [Internet] [Doctoral dissertation]. The Ohio State University; 2010. [cited 2019 Oct 22]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1274913629.

Council of Science Editors:

Lee D. Atomic Scale Gate Electrode Formed by a Charged Defect: Scanning Tunneling Microscopy of Single Impurities in GaAs Semiconductors. [Doctoral Dissertation]. The Ohio State University; 2010. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1274913629


NSYSU

25. Lai, Chih-Ming. GaAs VCSEL Metallization and Characterization.

Degree: Master, Physics, 2000, NSYSU

 ãGaAs VCSEL Contact Process and Feature Analysis ãIn this article, we talk about the process of metalization on sample of epied GaAs VCSEL structure. We… (more)

Subjects/Keywords: EL; GaAs; VCSEL

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APA (6th Edition):

Lai, C. (2000). GaAs VCSEL Metallization and Characterization. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lai, Chih-Ming. “GaAs VCSEL Metallization and Characterization.” 2000. Thesis, NSYSU. Accessed October 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lai, Chih-Ming. “GaAs VCSEL Metallization and Characterization.” 2000. Web. 22 Oct 2019.

Vancouver:

Lai C. GaAs VCSEL Metallization and Characterization. [Internet] [Thesis]. NSYSU; 2000. [cited 2019 Oct 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lai C. GaAs VCSEL Metallization and Characterization. [Thesis]. NSYSU; 2000. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720100-170156

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

26. Wu, Chin-shu. Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage.

Degree: Master, Physics, 2004, NSYSU

We discove the decrement,comparing the Electroreflectance spectroscopy of theforward biased voltage is 0.5V after the photon energy is 1.8eV.We discuss the case from Asymptotic form and the sample. Advisors/Committee Members: Der-Jun Jang (chair), Dong-Po Wang (committee member), I-Min Jiang (chair).

Subjects/Keywords: GaAs; Electroreflectance spectroscopy

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APA (6th Edition):

Wu, C. (2004). Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630104-163318

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Chin-shu. “Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage.” 2004. Thesis, NSYSU. Accessed October 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630104-163318.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Chin-shu. “Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage.” 2004. Web. 22 Oct 2019.

Vancouver:

Wu C. Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage. [Internet] [Thesis]. NSYSU; 2004. [cited 2019 Oct 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630104-163318.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu C. Electroreflectance spectroscopy of surface-intrinsic- n+ undoped GaAs at various biased voltage. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0630104-163318

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

27. Chen, Ying-shiuan. The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs.

Degree: Master, Physics, 2004, NSYSU

 The electroreflectance (ER) of surface-intrinsic-n+ type doped GaAs has exhibited many Franz-Keldysh oscillations to enable the application of fast Fourier transform to separate the heavy… (more)

Subjects/Keywords: GaAs; electroreflectance spectroscopy

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, Y. (2004). The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701104-150710

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Ying-shiuan. “The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs.” 2004. Thesis, NSYSU. Accessed October 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701104-150710.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Ying-shiuan. “The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs.” 2004. Web. 22 Oct 2019.

Vancouver:

Chen Y. The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs. [Internet] [Thesis]. NSYSU; 2004. [cited 2019 Oct 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701104-150710.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. The dependence of effective reduced mass on changed photon energy by electroreflectance spectroscopy of surface-intrinsic-n+ undoped GaAs. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701104-150710

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

28. Huang, Shiuan-Hua. Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation.

Degree: Master, Electro-Optical Engineering, 2012, NSYSU

 In this thesis, a novel method for multi-pulse with equal chirp characteristics and more efficient THz generation through two photon absorption (TPA) are investigated and… (more)

Subjects/Keywords: LT-GaAs; THz; pulse shaper; TPA; PCA

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APA (6th Edition):

Huang, S. (2012). Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-110625

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Shiuan-Hua. “Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation.” 2012. Thesis, NSYSU. Accessed October 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-110625.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Shiuan-Hua. “Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation.” 2012. Web. 22 Oct 2019.

Vancouver:

Huang S. Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 Oct 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-110625.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang S. Development of Novel Pulse Shaping Technique and Its Application for Terahertz Radiation. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0719112-110625

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


McMaster University

29. Zhang, Junpeng. ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS.

Degree: MASc, 2014, McMaster University

III-V semiconductor nanowires (NWs) are often referred to as one-dimensional (1-D) materials because of their high aspect ratios and excellent quantum confinement properties. Spacing between… (more)

Subjects/Keywords: GaAs nanowire; ITO; Absorptance; Ohmic contact

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APA (6th Edition):

Zhang, J. (2014). ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS. (Masters Thesis). McMaster University. Retrieved from http://hdl.handle.net/11375/16364

Chicago Manual of Style (16th Edition):

Zhang, Junpeng. “ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS.” 2014. Masters Thesis, McMaster University. Accessed October 22, 2019. http://hdl.handle.net/11375/16364.

MLA Handbook (7th Edition):

Zhang, Junpeng. “ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS.” 2014. Web. 22 Oct 2019.

Vancouver:

Zhang J. ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS. [Internet] [Masters thesis]. McMaster University; 2014. [cited 2019 Oct 22]. Available from: http://hdl.handle.net/11375/16364.

Council of Science Editors:

Zhang J. ELECTRICAL AND OPTICAL CHARACTERIZATION OF GaAs NANOWIRE ARRAYS. [Masters Thesis]. McMaster University; 2014. Available from: http://hdl.handle.net/11375/16364


University of New South Wales

30. Chen, Jason Chao-Hsuan. Electronic transport of low dimensional holes in induced p-type GaAs devices.

Degree: Physics, 2012, University of New South Wales

 In this thesis we study low dimensional hole systems fabricated on GaAs/AlGaAsheterostructures without any modulation dopants. The electrical transports of holes in twodimensions (2D), one… (more)

Subjects/Keywords: Holes; Condensed matter physics; GaAs/AlGaAs heterostructures

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APA (6th Edition):

Chen, J. C. (2012). Electronic transport of low dimensional holes in induced p-type GaAs devices. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/52388 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11061/SOURCE1?view=true

Chicago Manual of Style (16th Edition):

Chen, Jason Chao-Hsuan. “Electronic transport of low dimensional holes in induced p-type GaAs devices.” 2012. Doctoral Dissertation, University of New South Wales. Accessed October 22, 2019. http://handle.unsw.edu.au/1959.4/52388 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11061/SOURCE1?view=true.

MLA Handbook (7th Edition):

Chen, Jason Chao-Hsuan. “Electronic transport of low dimensional holes in induced p-type GaAs devices.” 2012. Web. 22 Oct 2019.

Vancouver:

Chen JC. Electronic transport of low dimensional holes in induced p-type GaAs devices. [Internet] [Doctoral dissertation]. University of New South Wales; 2012. [cited 2019 Oct 22]. Available from: http://handle.unsw.edu.au/1959.4/52388 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11061/SOURCE1?view=true.

Council of Science Editors:

Chen JC. Electronic transport of low dimensional holes in induced p-type GaAs devices. [Doctoral Dissertation]. University of New South Wales; 2012. Available from: http://handle.unsw.edu.au/1959.4/52388 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:11061/SOURCE1?view=true

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