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You searched for subject:(Field effect transistors). Showing records 1 – 30 of 486 total matches.

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Addis Ababa University

1. Kidist, Moges. MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS .

Degree: 2013, Addis Ababa University

 Modeling and simulation of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) is very essential in order to understand the device physics, electrostatics and other important… (more)

Subjects/Keywords: SILICON NANOWIRE; TRANSISTORS; FIELD EFFECT

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Kidist, M. (2013). MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS . (Thesis). Addis Ababa University. Retrieved from http://etd.aau.edu.et/dspace/handle/123456789/4501

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kidist, Moges. “MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS .” 2013. Thesis, Addis Ababa University. Accessed March 08, 2021. http://etd.aau.edu.et/dspace/handle/123456789/4501.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kidist, Moges. “MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS .” 2013. Web. 08 Mar 2021.

Vancouver:

Kidist M. MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS . [Internet] [Thesis]. Addis Ababa University; 2013. [cited 2021 Mar 08]. Available from: http://etd.aau.edu.et/dspace/handle/123456789/4501.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kidist M. MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS . [Thesis]. Addis Ababa University; 2013. Available from: http://etd.aau.edu.et/dspace/handle/123456789/4501

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

2. Cagang, Aldrine Abenoja CBME. Graphene-based field effect transistor sensors.

Degree: 2017, Hong Kong University of Science and Technology

 Graphene has attracted a large amount of attention in sensing applications due to its remarkable properties such as large surface area, high carrier mobility and… (more)

Subjects/Keywords: Field-effect transistors ; Detectors ; Graphene

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APA (6th Edition):

Cagang, A. A. C. (2017). Graphene-based field effect transistor sensors. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-91117 ; https://doi.org/10.14711/thesis-991012551768503412 ; http://repository.ust.hk/ir/bitstream/1783.1-91117/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Cagang, Aldrine Abenoja CBME. “Graphene-based field effect transistor sensors.” 2017. Thesis, Hong Kong University of Science and Technology. Accessed March 08, 2021. http://repository.ust.hk/ir/Record/1783.1-91117 ; https://doi.org/10.14711/thesis-991012551768503412 ; http://repository.ust.hk/ir/bitstream/1783.1-91117/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Cagang, Aldrine Abenoja CBME. “Graphene-based field effect transistor sensors.” 2017. Web. 08 Mar 2021.

Vancouver:

Cagang AAC. Graphene-based field effect transistor sensors. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2017. [cited 2021 Mar 08]. Available from: http://repository.ust.hk/ir/Record/1783.1-91117 ; https://doi.org/10.14711/thesis-991012551768503412 ; http://repository.ust.hk/ir/bitstream/1783.1-91117/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cagang AAC. Graphene-based field effect transistor sensors. [Thesis]. Hong Kong University of Science and Technology; 2017. Available from: http://repository.ust.hk/ir/Record/1783.1-91117 ; https://doi.org/10.14711/thesis-991012551768503412 ; http://repository.ust.hk/ir/bitstream/1783.1-91117/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

3. Barth, Michael. Development of a deep submicron fabrication process for tunneling field effect transistors.

Degree: Electrical Engineering, 2011, Rochester Institute of Technology

 The requirements placed upon next-generation devices include high on-state current, low power supply voltages, and low subthreshold swing. Tunneling Field Effect Transistors (TFETs) have been… (more)

Subjects/Keywords: TFET; Tunneling; Tunneling field effect transistors

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APA (6th Edition):

Barth, M. (2011). Development of a deep submicron fabrication process for tunneling field effect transistors. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/1240

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Barth, Michael. “Development of a deep submicron fabrication process for tunneling field effect transistors.” 2011. Thesis, Rochester Institute of Technology. Accessed March 08, 2021. https://scholarworks.rit.edu/theses/1240.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Barth, Michael. “Development of a deep submicron fabrication process for tunneling field effect transistors.” 2011. Web. 08 Mar 2021.

Vancouver:

Barth M. Development of a deep submicron fabrication process for tunneling field effect transistors. [Internet] [Thesis]. Rochester Institute of Technology; 2011. [cited 2021 Mar 08]. Available from: https://scholarworks.rit.edu/theses/1240.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Barth M. Development of a deep submicron fabrication process for tunneling field effect transistors. [Thesis]. Rochester Institute of Technology; 2011. Available from: https://scholarworks.rit.edu/theses/1240

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Cornell University

4. Pozdin, Vladimir. Design And Growth Of Organic Semiconductors For Organic Thin Film Transistors.

Degree: PhD, Materials Science and Engineering, 2011, Cornell University

 Organic field-effect transistors are attracting much attention due to possible applications in flexible electronics, but low electronic performance and stability remain challenges to realizing such… (more)

Subjects/Keywords: organic semiconductors; field-effect transistors; giwaxs

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APA (6th Edition):

Pozdin, V. (2011). Design And Growth Of Organic Semiconductors For Organic Thin Film Transistors. (Doctoral Dissertation). Cornell University. Retrieved from http://hdl.handle.net/1813/33640

Chicago Manual of Style (16th Edition):

Pozdin, Vladimir. “Design And Growth Of Organic Semiconductors For Organic Thin Film Transistors.” 2011. Doctoral Dissertation, Cornell University. Accessed March 08, 2021. http://hdl.handle.net/1813/33640.

MLA Handbook (7th Edition):

Pozdin, Vladimir. “Design And Growth Of Organic Semiconductors For Organic Thin Film Transistors.” 2011. Web. 08 Mar 2021.

Vancouver:

Pozdin V. Design And Growth Of Organic Semiconductors For Organic Thin Film Transistors. [Internet] [Doctoral dissertation]. Cornell University; 2011. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/1813/33640.

Council of Science Editors:

Pozdin V. Design And Growth Of Organic Semiconductors For Organic Thin Film Transistors. [Doctoral Dissertation]. Cornell University; 2011. Available from: http://hdl.handle.net/1813/33640


University of Johannesburg

5. Vorster, Adriaan. Die ontwikkeling van 'n hoëdrywing skakelaar met 'n matriks van mosfet skakelelemente.

Degree: 2014, University of Johannesburg

M.Ing. (Electrical and Electronic Engineering)

This thesis covers the development of the Mosmatrix, a high speed, high power switch which is implemented with an array… (more)

Subjects/Keywords: Metal oxide semiconductor field-effect transistors

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APA (6th Edition):

Vorster, A. (2014). Die ontwikkeling van 'n hoëdrywing skakelaar met 'n matriks van mosfet skakelelemente. (Thesis). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/9539

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Vorster, Adriaan. “Die ontwikkeling van 'n hoëdrywing skakelaar met 'n matriks van mosfet skakelelemente.” 2014. Thesis, University of Johannesburg. Accessed March 08, 2021. http://hdl.handle.net/10210/9539.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Vorster, Adriaan. “Die ontwikkeling van 'n hoëdrywing skakelaar met 'n matriks van mosfet skakelelemente.” 2014. Web. 08 Mar 2021.

Vancouver:

Vorster A. Die ontwikkeling van 'n hoëdrywing skakelaar met 'n matriks van mosfet skakelelemente. [Internet] [Thesis]. University of Johannesburg; 2014. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10210/9539.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vorster A. Die ontwikkeling van 'n hoëdrywing skakelaar met 'n matriks van mosfet skakelelemente. [Thesis]. University of Johannesburg; 2014. Available from: http://hdl.handle.net/10210/9539

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Oregon State University

6. Chen, David Wei. A MOSFET integrated circuit shift register.

Degree: MS, Electrical and Electronics Engineering, 1969, Oregon State University

 This paper is concerned with the design of a 21-bit metal-oxide-semiconductor field-effect transistor (MOSFET) integrated circuit static shift register. This circuit consists of three separate… (more)

Subjects/Keywords: Field-effect transistors

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APA (6th Edition):

Chen, D. W. (1969). A MOSFET integrated circuit shift register. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/46434

Chicago Manual of Style (16th Edition):

Chen, David Wei. “A MOSFET integrated circuit shift register.” 1969. Masters Thesis, Oregon State University. Accessed March 08, 2021. http://hdl.handle.net/1957/46434.

MLA Handbook (7th Edition):

Chen, David Wei. “A MOSFET integrated circuit shift register.” 1969. Web. 08 Mar 2021.

Vancouver:

Chen DW. A MOSFET integrated circuit shift register. [Internet] [Masters thesis]. Oregon State University; 1969. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/1957/46434.

Council of Science Editors:

Chen DW. A MOSFET integrated circuit shift register. [Masters Thesis]. Oregon State University; 1969. Available from: http://hdl.handle.net/1957/46434


Columbia University

7. Masurkar, Amrita Vijay. Charge Injection and Transport in Pentacene Field-Effect Transistors.

Degree: 2017, Columbia University

 Since the seminal discovery of conductive polymers four decades ago, organic electronics has grown from an exploratory field to an industry offering novel consumer products.… (more)

Subjects/Keywords: Electrical engineering; Organic electronics; Field-effect transistors

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APA (6th Edition):

Masurkar, A. V. (2017). Charge Injection and Transport in Pentacene Field-Effect Transistors. (Doctoral Dissertation). Columbia University. Retrieved from https://doi.org/10.7916/D8SN0NCH

Chicago Manual of Style (16th Edition):

Masurkar, Amrita Vijay. “Charge Injection and Transport in Pentacene Field-Effect Transistors.” 2017. Doctoral Dissertation, Columbia University. Accessed March 08, 2021. https://doi.org/10.7916/D8SN0NCH.

MLA Handbook (7th Edition):

Masurkar, Amrita Vijay. “Charge Injection and Transport in Pentacene Field-Effect Transistors.” 2017. Web. 08 Mar 2021.

Vancouver:

Masurkar AV. Charge Injection and Transport in Pentacene Field-Effect Transistors. [Internet] [Doctoral dissertation]. Columbia University; 2017. [cited 2021 Mar 08]. Available from: https://doi.org/10.7916/D8SN0NCH.

Council of Science Editors:

Masurkar AV. Charge Injection and Transport in Pentacene Field-Effect Transistors. [Doctoral Dissertation]. Columbia University; 2017. Available from: https://doi.org/10.7916/D8SN0NCH


Hong Kong University of Science and Technology

8. Zhang, Mingwei. Fabrication and characterization of single-layer graphene transferred on hexagonal boron nitride.

Degree: 2013, Hong Kong University of Science and Technology

 Graphene, a two-dimensional single atomic layer of graphite, has emerged as a promising material with interesting physical and chemical properties and high potential for various… (more)

Subjects/Keywords: Field-effect transistors ; Graphene ; Boron nitride

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APA (6th Edition):

Zhang, M. (2013). Fabrication and characterization of single-layer graphene transferred on hexagonal boron nitride. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-80933 ; https://doi.org/10.14711/thesis-b1254464 ; http://repository.ust.hk/ir/bitstream/1783.1-80933/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhang, Mingwei. “Fabrication and characterization of single-layer graphene transferred on hexagonal boron nitride.” 2013. Thesis, Hong Kong University of Science and Technology. Accessed March 08, 2021. http://repository.ust.hk/ir/Record/1783.1-80933 ; https://doi.org/10.14711/thesis-b1254464 ; http://repository.ust.hk/ir/bitstream/1783.1-80933/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhang, Mingwei. “Fabrication and characterization of single-layer graphene transferred on hexagonal boron nitride.” 2013. Web. 08 Mar 2021.

Vancouver:

Zhang M. Fabrication and characterization of single-layer graphene transferred on hexagonal boron nitride. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2013. [cited 2021 Mar 08]. Available from: http://repository.ust.hk/ir/Record/1783.1-80933 ; https://doi.org/10.14711/thesis-b1254464 ; http://repository.ust.hk/ir/bitstream/1783.1-80933/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang M. Fabrication and characterization of single-layer graphene transferred on hexagonal boron nitride. [Thesis]. Hong Kong University of Science and Technology; 2013. Available from: http://repository.ust.hk/ir/Record/1783.1-80933 ; https://doi.org/10.14711/thesis-b1254464 ; http://repository.ust.hk/ir/bitstream/1783.1-80933/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

9. Ahmed, Zubair ECE. Modeling carbon nanotube (CNT) distribution variations in CNTFETs.

Degree: 2016, Hong Kong University of Science and Technology

 Carbon Nanotube (CNT) transistor has been widely studied as an emerging technology for circuit applications. The recently demonstrated CNT computer serves as a major achievement… (more)

Subjects/Keywords: Carbon nanotubes ; Field-effect transistors ; Materials

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APA (6th Edition):

Ahmed, Z. E. (2016). Modeling carbon nanotube (CNT) distribution variations in CNTFETs. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-101288 ; https://doi.org/10.14711/thesis-b1626271 ; http://repository.ust.hk/ir/bitstream/1783.1-101288/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ahmed, Zubair ECE. “Modeling carbon nanotube (CNT) distribution variations in CNTFETs.” 2016. Thesis, Hong Kong University of Science and Technology. Accessed March 08, 2021. http://repository.ust.hk/ir/Record/1783.1-101288 ; https://doi.org/10.14711/thesis-b1626271 ; http://repository.ust.hk/ir/bitstream/1783.1-101288/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ahmed, Zubair ECE. “Modeling carbon nanotube (CNT) distribution variations in CNTFETs.” 2016. Web. 08 Mar 2021.

Vancouver:

Ahmed ZE. Modeling carbon nanotube (CNT) distribution variations in CNTFETs. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2016. [cited 2021 Mar 08]. Available from: http://repository.ust.hk/ir/Record/1783.1-101288 ; https://doi.org/10.14711/thesis-b1626271 ; http://repository.ust.hk/ir/bitstream/1783.1-101288/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ahmed ZE. Modeling carbon nanotube (CNT) distribution variations in CNTFETs. [Thesis]. Hong Kong University of Science and Technology; 2016. Available from: http://repository.ust.hk/ir/Record/1783.1-101288 ; https://doi.org/10.14711/thesis-b1626271 ; http://repository.ust.hk/ir/bitstream/1783.1-101288/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

10. Ma, Shenhui MAE. The study of high-performance field-effect transistor based biosensors for detection of biomolecules.

Degree: 2019, Hong Kong University of Science and Technology

 Impedimetric and potentiometric biosensors have attracted considerable attention due to high sensitivity, high selectivity, rapid response time, low cost as well as miniaturization, and large… (more)

Subjects/Keywords: Field-effect transistors ; Electrochemical sensors ; Biosensors ; Biomolecules

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APA (6th Edition):

Ma, S. M. (2019). The study of high-performance field-effect transistor based biosensors for detection of biomolecules. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-105897 ; https://doi.org/10.14711/thesis-991012763469203412 ; http://repository.ust.hk/ir/bitstream/1783.1-105897/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ma, Shenhui MAE. “The study of high-performance field-effect transistor based biosensors for detection of biomolecules.” 2019. Thesis, Hong Kong University of Science and Technology. Accessed March 08, 2021. http://repository.ust.hk/ir/Record/1783.1-105897 ; https://doi.org/10.14711/thesis-991012763469203412 ; http://repository.ust.hk/ir/bitstream/1783.1-105897/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ma, Shenhui MAE. “The study of high-performance field-effect transistor based biosensors for detection of biomolecules.” 2019. Web. 08 Mar 2021.

Vancouver:

Ma SM. The study of high-performance field-effect transistor based biosensors for detection of biomolecules. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2019. [cited 2021 Mar 08]. Available from: http://repository.ust.hk/ir/Record/1783.1-105897 ; https://doi.org/10.14711/thesis-991012763469203412 ; http://repository.ust.hk/ir/bitstream/1783.1-105897/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ma SM. The study of high-performance field-effect transistor based biosensors for detection of biomolecules. [Thesis]. Hong Kong University of Science and Technology; 2019. Available from: http://repository.ust.hk/ir/Record/1783.1-105897 ; https://doi.org/10.14711/thesis-991012763469203412 ; http://repository.ust.hk/ir/bitstream/1783.1-105897/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

11. Kim, Ji Hun. Optimization of purely semiconducting carbon nanotube complementary field effect transistors.

Degree: MS, 1200, 2013, University of Illinois – Urbana-Champaign

 Among the remarkable variety of semiconducting nanomaterials that have been discovered, single walled carbon nanotubes (SWNTs) have properties that make them uniquely well suited for… (more)

Subjects/Keywords: carbon nanotube; carbon nanotube field-effect transistors

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APA (6th Edition):

Kim, J. H. (2013). Optimization of purely semiconducting carbon nanotube complementary field effect transistors. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/42442

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kim, Ji Hun. “Optimization of purely semiconducting carbon nanotube complementary field effect transistors.” 2013. Thesis, University of Illinois – Urbana-Champaign. Accessed March 08, 2021. http://hdl.handle.net/2142/42442.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kim, Ji Hun. “Optimization of purely semiconducting carbon nanotube complementary field effect transistors.” 2013. Web. 08 Mar 2021.

Vancouver:

Kim JH. Optimization of purely semiconducting carbon nanotube complementary field effect transistors. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2013. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/2142/42442.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kim JH. Optimization of purely semiconducting carbon nanotube complementary field effect transistors. [Thesis]. University of Illinois – Urbana-Champaign; 2013. Available from: http://hdl.handle.net/2142/42442

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Southern California

12. Zhang, Rui. Surface functionalization of nanomaterials and the development of nanobiosensors.

Degree: PhD, Chemistry, 2012, University of Southern California

 In the past 20 years, material scientists and engineers have progressively miniaturized the materials that constitute the building blocks of various biomedical devices. This progressive… (more)

Subjects/Keywords: nanomaterials; surface functionalization; biosensors; field-effect transistors

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APA (6th Edition):

Zhang, R. (2012). Surface functionalization of nanomaterials and the development of nanobiosensors. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/107242/rec/6237

Chicago Manual of Style (16th Edition):

Zhang, Rui. “Surface functionalization of nanomaterials and the development of nanobiosensors.” 2012. Doctoral Dissertation, University of Southern California. Accessed March 08, 2021. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/107242/rec/6237.

MLA Handbook (7th Edition):

Zhang, Rui. “Surface functionalization of nanomaterials and the development of nanobiosensors.” 2012. Web. 08 Mar 2021.

Vancouver:

Zhang R. Surface functionalization of nanomaterials and the development of nanobiosensors. [Internet] [Doctoral dissertation]. University of Southern California; 2012. [cited 2021 Mar 08]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/107242/rec/6237.

Council of Science Editors:

Zhang R. Surface functionalization of nanomaterials and the development of nanobiosensors. [Doctoral Dissertation]. University of Southern California; 2012. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/107242/rec/6237


University of Arizona

13. Gray, Paul R., 1942-. Transient performance of arbitrarily doped four terminal field-effect transistors .

Degree: 1965, University of Arizona

Subjects/Keywords: Field-effect transistors.

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APA (6th Edition):

Gray, Paul R., 1. (1965). Transient performance of arbitrarily doped four terminal field-effect transistors . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/319801

Chicago Manual of Style (16th Edition):

Gray, Paul R., 1942-. “Transient performance of arbitrarily doped four terminal field-effect transistors .” 1965. Masters Thesis, University of Arizona. Accessed March 08, 2021. http://hdl.handle.net/10150/319801.

MLA Handbook (7th Edition):

Gray, Paul R., 1942-. “Transient performance of arbitrarily doped four terminal field-effect transistors .” 1965. Web. 08 Mar 2021.

Vancouver:

Gray, Paul R. 1. Transient performance of arbitrarily doped four terminal field-effect transistors . [Internet] [Masters thesis]. University of Arizona; 1965. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10150/319801.

Council of Science Editors:

Gray, Paul R. 1. Transient performance of arbitrarily doped four terminal field-effect transistors . [Masters Thesis]. University of Arizona; 1965. Available from: http://hdl.handle.net/10150/319801


University of Arizona

14. Hudson, Pete Henry, 1940-. Frequency performance of four terminal field-effect transistors .

Degree: 1964, University of Arizona

Subjects/Keywords: Field-effect transistors.

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APA (6th Edition):

Hudson, Pete Henry, 1. (1964). Frequency performance of four terminal field-effect transistors . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/319534

Chicago Manual of Style (16th Edition):

Hudson, Pete Henry, 1940-. “Frequency performance of four terminal field-effect transistors .” 1964. Masters Thesis, University of Arizona. Accessed March 08, 2021. http://hdl.handle.net/10150/319534.

MLA Handbook (7th Edition):

Hudson, Pete Henry, 1940-. “Frequency performance of four terminal field-effect transistors .” 1964. Web. 08 Mar 2021.

Vancouver:

Hudson, Pete Henry 1. Frequency performance of four terminal field-effect transistors . [Internet] [Masters thesis]. University of Arizona; 1964. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10150/319534.

Council of Science Editors:

Hudson, Pete Henry 1. Frequency performance of four terminal field-effect transistors . [Masters Thesis]. University of Arizona; 1964. Available from: http://hdl.handle.net/10150/319534


University of Arizona

15. Clements, John Lawrence, 1940-. Systematic modeling of the metal-oxide-semiconductor field effect transistor .

Degree: 1965, University of Arizona

Subjects/Keywords: Field-effect transistors.

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APA (6th Edition):

Clements, John Lawrence, 1. (1965). Systematic modeling of the metal-oxide-semiconductor field effect transistor . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/347504

Chicago Manual of Style (16th Edition):

Clements, John Lawrence, 1940-. “Systematic modeling of the metal-oxide-semiconductor field effect transistor .” 1965. Masters Thesis, University of Arizona. Accessed March 08, 2021. http://hdl.handle.net/10150/347504.

MLA Handbook (7th Edition):

Clements, John Lawrence, 1940-. “Systematic modeling of the metal-oxide-semiconductor field effect transistor .” 1965. Web. 08 Mar 2021.

Vancouver:

Clements, John Lawrence 1. Systematic modeling of the metal-oxide-semiconductor field effect transistor . [Internet] [Masters thesis]. University of Arizona; 1965. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10150/347504.

Council of Science Editors:

Clements, John Lawrence 1. Systematic modeling of the metal-oxide-semiconductor field effect transistor . [Masters Thesis]. University of Arizona; 1965. Available from: http://hdl.handle.net/10150/347504


University of Hong Kong

16. 蕭錫霖. Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application.

Degree: 2015, University of Hong Kong

 Magnetic sensors have a wide range of applications in proximity sensing, position sensing, etc. Once a magnetic field is present, or there is a change… (more)

Subjects/Keywords: Field-effect transistors

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APA (6th Edition):

蕭錫霖. (2015). Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/222371

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

蕭錫霖. “Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application.” 2015. Thesis, University of Hong Kong. Accessed March 08, 2021. http://hdl.handle.net/10722/222371.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

蕭錫霖. “Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application.” 2015. Web. 08 Mar 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

蕭錫霖. Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. [Internet] [Thesis]. University of Hong Kong; 2015. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10722/222371.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

蕭錫霖. Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. [Thesis]. University of Hong Kong; 2015. Available from: http://hdl.handle.net/10722/222371

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation


University of Hong Kong

17. Yang, Zhenyi. A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor.

Degree: 2016, University of Hong Kong

 Due to the high demand of magnetic sensors in the market nowadays, CMOS magnetic sensor sectorial SD-MAGFETs become widely used because of their compact size… (more)

Subjects/Keywords: Field-effect transistors

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APA (6th Edition):

Yang, Z. (2016). A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/239375

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Zhenyi. “A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor.” 2016. Thesis, University of Hong Kong. Accessed March 08, 2021. http://hdl.handle.net/10722/239375.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Zhenyi. “A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor.” 2016. Web. 08 Mar 2021.

Vancouver:

Yang Z. A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor. [Internet] [Thesis]. University of Hong Kong; 2016. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10722/239375.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang Z. A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor. [Thesis]. University of Hong Kong; 2016. Available from: http://hdl.handle.net/10722/239375

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Macquarie University

18. McMahon, Christopher. Fabrication of organic field effect transistors using photosensitive active materials.

Degree: 2015, Macquarie University

Empircal thesis.

Bibliography: pages 315-328.

Chapter One. Introduction  – Chapter Two. A review of the application of photopatterning in the production of organic electronic devices… (more)

Subjects/Keywords: Field-effect transistors  – Design and construction

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APA (6th Edition):

McMahon, C. (2015). Fabrication of organic field effect transistors using photosensitive active materials. (Doctoral Dissertation). Macquarie University. Retrieved from http://hdl.handle.net/1959.14/1069170

Chicago Manual of Style (16th Edition):

McMahon, Christopher. “Fabrication of organic field effect transistors using photosensitive active materials.” 2015. Doctoral Dissertation, Macquarie University. Accessed March 08, 2021. http://hdl.handle.net/1959.14/1069170.

MLA Handbook (7th Edition):

McMahon, Christopher. “Fabrication of organic field effect transistors using photosensitive active materials.” 2015. Web. 08 Mar 2021.

Vancouver:

McMahon C. Fabrication of organic field effect transistors using photosensitive active materials. [Internet] [Doctoral dissertation]. Macquarie University; 2015. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/1959.14/1069170.

Council of Science Editors:

McMahon C. Fabrication of organic field effect transistors using photosensitive active materials. [Doctoral Dissertation]. Macquarie University; 2015. Available from: http://hdl.handle.net/1959.14/1069170


Hong Kong University of Science and Technology

19. Hua, Mengyuan ECE. Gate dielectric technology for high-performance GaN power MIS-HEMT and MIS-FET.

Degree: 2017, Hong Kong University of Science and Technology

 Wide-bandgap GaN-based power electronic devices are emerging as promising candidates for the next generation high-efficiency power converters owing to superior material properties such as high… (more)

Subjects/Keywords: Gallium nitride ; Modulation-doped field-effect transistors ; Field-effect transistors ; Dielectric devices ; Thin film devices

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APA (6th Edition):

Hua, M. E. (2017). Gate dielectric technology for high-performance GaN power MIS-HEMT and MIS-FET. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-105606 ; https://doi.org/10.14711/thesis-991012552668503412 ; http://repository.ust.hk/ir/bitstream/1783.1-105606/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hua, Mengyuan ECE. “Gate dielectric technology for high-performance GaN power MIS-HEMT and MIS-FET.” 2017. Thesis, Hong Kong University of Science and Technology. Accessed March 08, 2021. http://repository.ust.hk/ir/Record/1783.1-105606 ; https://doi.org/10.14711/thesis-991012552668503412 ; http://repository.ust.hk/ir/bitstream/1783.1-105606/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hua, Mengyuan ECE. “Gate dielectric technology for high-performance GaN power MIS-HEMT and MIS-FET.” 2017. Web. 08 Mar 2021.

Vancouver:

Hua ME. Gate dielectric technology for high-performance GaN power MIS-HEMT and MIS-FET. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2017. [cited 2021 Mar 08]. Available from: http://repository.ust.hk/ir/Record/1783.1-105606 ; https://doi.org/10.14711/thesis-991012552668503412 ; http://repository.ust.hk/ir/bitstream/1783.1-105606/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hua ME. Gate dielectric technology for high-performance GaN power MIS-HEMT and MIS-FET. [Thesis]. Hong Kong University of Science and Technology; 2017. Available from: http://repository.ust.hk/ir/Record/1783.1-105606 ; https://doi.org/10.14711/thesis-991012552668503412 ; http://repository.ust.hk/ir/bitstream/1783.1-105606/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

20. Mellati, Meftah. Negative bias temperature instability modeling for pure-SiO2.

Degree: 2012, Université M'Hamed Bougara Boumerdès

103 p. : ill. ; 30 cm

Negative Bias Temperature Instability (NBTI) is a serious degradation mechanism in nanoscale devices and circuits. It impacts mainly… (more)

Subjects/Keywords: Thermique; Transistors MOSFET; Metal oxide semiconductor field-effect transistors; Heat engineering

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APA (6th Edition):

Mellati, M. (2012). Negative bias temperature instability modeling for pure-SiO2. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080123456789/1613

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mellati, Meftah. “Negative bias temperature instability modeling for pure-SiO2.” 2012. Thesis, Université M'Hamed Bougara Boumerdès. Accessed March 08, 2021. http://dlibrary.univ-boumerdes.dz:8080123456789/1613.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mellati, Meftah. “Negative bias temperature instability modeling for pure-SiO2.” 2012. Web. 08 Mar 2021.

Vancouver:

Mellati M. Negative bias temperature instability modeling for pure-SiO2. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 2012. [cited 2021 Mar 08]. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1613.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mellati M. Negative bias temperature instability modeling for pure-SiO2. [Thesis]. Université M'Hamed Bougara Boumerdès; 2012. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1613

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Mellati, Meftah. Negative bias temperature instability modeling for pure-SiO2.

Degree: 2012, Université M'Hamed Bougara Boumerdès

103 p. ; ill. ; 30 cm

Negative Bias Temperature Instability (NBTI) is a serious degradation mechanism in nanoscale devices and circuits. It impacts mainly… (more)

Subjects/Keywords: Thermique; Transistors MOSFET; Metal oxide semiconductor field-effect transistors; Heat engineering

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APA (6th Edition):

Mellati, M. (2012). Negative bias temperature instability modeling for pure-SiO2. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1094

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mellati, Meftah. “Negative bias temperature instability modeling for pure-SiO2.” 2012. Thesis, Université M'Hamed Bougara Boumerdès. Accessed March 08, 2021. http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1094.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mellati, Meftah. “Negative bias temperature instability modeling for pure-SiO2.” 2012. Web. 08 Mar 2021.

Vancouver:

Mellati M. Negative bias temperature instability modeling for pure-SiO2. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 2012. [cited 2021 Mar 08]. Available from: http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1094.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mellati M. Negative bias temperature instability modeling for pure-SiO2. [Thesis]. Université M'Hamed Bougara Boumerdès; 2012. Available from: http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1094

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

22. Jiang, Huaxing ECE. Development of advanced gate stacks and passivation techniques for GaN power transistors.

Degree: 2017, Hong Kong University of Science and Technology

 GaN-based high electron mobility transistors (HEMTs) are emerging as one of the most promising candidates for high efficiency power switching applications owing to their capability… (more)

Subjects/Keywords: Gallium nitride ; Power transistors ; Modulation-doped field-effect transistors ; Passive components

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APA (6th Edition):

Jiang, H. E. (2017). Development of advanced gate stacks and passivation techniques for GaN power transistors. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-95179 ; https://doi.org/10.14711/thesis-991012553169603412 ; http://repository.ust.hk/ir/bitstream/1783.1-95179/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jiang, Huaxing ECE. “Development of advanced gate stacks and passivation techniques for GaN power transistors.” 2017. Thesis, Hong Kong University of Science and Technology. Accessed March 08, 2021. http://repository.ust.hk/ir/Record/1783.1-95179 ; https://doi.org/10.14711/thesis-991012553169603412 ; http://repository.ust.hk/ir/bitstream/1783.1-95179/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jiang, Huaxing ECE. “Development of advanced gate stacks and passivation techniques for GaN power transistors.” 2017. Web. 08 Mar 2021.

Vancouver:

Jiang HE. Development of advanced gate stacks and passivation techniques for GaN power transistors. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2017. [cited 2021 Mar 08]. Available from: http://repository.ust.hk/ir/Record/1783.1-95179 ; https://doi.org/10.14711/thesis-991012553169603412 ; http://repository.ust.hk/ir/bitstream/1783.1-95179/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jiang HE. Development of advanced gate stacks and passivation techniques for GaN power transistors. [Thesis]. Hong Kong University of Science and Technology; 2017. Available from: http://repository.ust.hk/ir/Record/1783.1-95179 ; https://doi.org/10.14711/thesis-991012553169603412 ; http://repository.ust.hk/ir/bitstream/1783.1-95179/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rutgers University

23. Li, Yuzhu. Design, fabrication and process developments of 4H-silicon carbide TIVJFET.

Degree: PhD, Electrical and Computer Engineering, 2008, Rutgers University

This Ph.D thesis describes and reviews the state-of-the-start 4H-SiC power junction field-effect transistors (JFET). The purpose of thesis research includes design and fabrication of TIVJFET… (more)

Subjects/Keywords: Field effect transistors; Junction transistors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Li, Y. (2008). Design, fabrication and process developments of 4H-silicon carbide TIVJFET. (Doctoral Dissertation). Rutgers University. Retrieved from http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17256

Chicago Manual of Style (16th Edition):

Li, Yuzhu. “Design, fabrication and process developments of 4H-silicon carbide TIVJFET.” 2008. Doctoral Dissertation, Rutgers University. Accessed March 08, 2021. http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17256.

MLA Handbook (7th Edition):

Li, Yuzhu. “Design, fabrication and process developments of 4H-silicon carbide TIVJFET.” 2008. Web. 08 Mar 2021.

Vancouver:

Li Y. Design, fabrication and process developments of 4H-silicon carbide TIVJFET. [Internet] [Doctoral dissertation]. Rutgers University; 2008. [cited 2021 Mar 08]. Available from: http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17256.

Council of Science Editors:

Li Y. Design, fabrication and process developments of 4H-silicon carbide TIVJFET. [Doctoral Dissertation]. Rutgers University; 2008. Available from: http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17256


Columbia University

24. Warren, Steven Benjamin. CMOS Integration of Single-Molecule Field-Effect Transistors.

Degree: 2016, Columbia University

 Point functionalized carbon nanotubes have recently demonstrated the ability to serve as single-molecule biosensors. Operating as single-molecule Field-Effect Transistors (smFET), the sensors have been used… (more)

Subjects/Keywords: Field-effect transistors; Metal oxide semiconductor field-effect transistors; Carbon nanotubes; Biosensors; Metal oxide semiconductors, Complementary; Electrical engineering

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APA (6th Edition):

Warren, S. B. (2016). CMOS Integration of Single-Molecule Field-Effect Transistors. (Doctoral Dissertation). Columbia University. Retrieved from https://doi.org/10.7916/D8K937R9

Chicago Manual of Style (16th Edition):

Warren, Steven Benjamin. “CMOS Integration of Single-Molecule Field-Effect Transistors.” 2016. Doctoral Dissertation, Columbia University. Accessed March 08, 2021. https://doi.org/10.7916/D8K937R9.

MLA Handbook (7th Edition):

Warren, Steven Benjamin. “CMOS Integration of Single-Molecule Field-Effect Transistors.” 2016. Web. 08 Mar 2021.

Vancouver:

Warren SB. CMOS Integration of Single-Molecule Field-Effect Transistors. [Internet] [Doctoral dissertation]. Columbia University; 2016. [cited 2021 Mar 08]. Available from: https://doi.org/10.7916/D8K937R9.

Council of Science Editors:

Warren SB. CMOS Integration of Single-Molecule Field-Effect Transistors. [Doctoral Dissertation]. Columbia University; 2016. Available from: https://doi.org/10.7916/D8K937R9


Virginia Tech

25. Saluru, Sarat Kiran. Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications.

Degree: MS, Electrical Engineering, 2017, Virginia Tech

 The aggressive scaling of silicon (Si) based complementary metal-oxide-semiconductor (CMOS) transistor over the past 50 years has resulted in an exponential increase in device density,… (more)

Subjects/Keywords: InGaAs; III-V; Metal-Oxide-Semiconductor Field-Effect Transistors; Fin-Field-Effect Transistors; Heterogeneous Integration; Silicon

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APA (6th Edition):

Saluru, S. K. (2017). Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/78028

Chicago Manual of Style (16th Edition):

Saluru, Sarat Kiran. “Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications.” 2017. Masters Thesis, Virginia Tech. Accessed March 08, 2021. http://hdl.handle.net/10919/78028.

MLA Handbook (7th Edition):

Saluru, Sarat Kiran. “Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications.” 2017. Web. 08 Mar 2021.

Vancouver:

Saluru SK. Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications. [Internet] [Masters thesis]. Virginia Tech; 2017. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10919/78028.

Council of Science Editors:

Saluru SK. Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications. [Masters Thesis]. Virginia Tech; 2017. Available from: http://hdl.handle.net/10919/78028


University of British Columbia

26. Lord, Joseph Louis Martin. FET upconverter design using load dependent mixing transconductance.

Degree: Master of Applied Science - MASc, Electrical and Computer Engineering, 1988, University of British Columbia

 The conversion gain of GaAs MESFET mixers is known to be dependent on the impedances seen by the applied signals and the resulting mixing products… (more)

Subjects/Keywords: Metal semiconductor field-effect transistors; Field-effect transistors

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APA (6th Edition):

Lord, J. L. M. (1988). FET upconverter design using load dependent mixing transconductance. (Masters Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/28499

Chicago Manual of Style (16th Edition):

Lord, Joseph Louis Martin. “FET upconverter design using load dependent mixing transconductance.” 1988. Masters Thesis, University of British Columbia. Accessed March 08, 2021. http://hdl.handle.net/2429/28499.

MLA Handbook (7th Edition):

Lord, Joseph Louis Martin. “FET upconverter design using load dependent mixing transconductance.” 1988. Web. 08 Mar 2021.

Vancouver:

Lord JLM. FET upconverter design using load dependent mixing transconductance. [Internet] [Masters thesis]. University of British Columbia; 1988. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/2429/28499.

Council of Science Editors:

Lord JLM. FET upconverter design using load dependent mixing transconductance. [Masters Thesis]. University of British Columbia; 1988. Available from: http://hdl.handle.net/2429/28499


Simon Fraser University

27. Liang, Joseph. Parameter extraction of LDD short-channel and narrow-width MOSFETS under varying operating conditions.

Degree: 1993, Simon Fraser University

Subjects/Keywords: Metal oxide semiconductor field-effect transistors.; Field-effect transistors.

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APA (6th Edition):

Liang, J. (1993). Parameter extraction of LDD short-channel and narrow-width MOSFETS under varying operating conditions. (Thesis). Simon Fraser University. Retrieved from http://summit.sfu.ca/item/5743

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liang, Joseph. “Parameter extraction of LDD short-channel and narrow-width MOSFETS under varying operating conditions.” 1993. Thesis, Simon Fraser University. Accessed March 08, 2021. http://summit.sfu.ca/item/5743.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liang, Joseph. “Parameter extraction of LDD short-channel and narrow-width MOSFETS under varying operating conditions.” 1993. Web. 08 Mar 2021.

Vancouver:

Liang J. Parameter extraction of LDD short-channel and narrow-width MOSFETS under varying operating conditions. [Internet] [Thesis]. Simon Fraser University; 1993. [cited 2021 Mar 08]. Available from: http://summit.sfu.ca/item/5743.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liang J. Parameter extraction of LDD short-channel and narrow-width MOSFETS under varying operating conditions. [Thesis]. Simon Fraser University; 1993. Available from: http://summit.sfu.ca/item/5743

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Michigan State University

28. Taskas, Petros G. Lifetime estimation of power MOSFETs.

Degree: 2016, Michigan State University

Thesis M.S. Michigan State University. Electrical Engineering 2016

"In this document a theory is proposed that all power MOSFETs will go through three regions of… (more)

Subjects/Keywords: Metal oxide semiconductor field-effect transistors; Metal oxide semiconductor field-effect transistors – Mathematical models; Electrical engineering; Physics

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APA (6th Edition):

Taskas, P. G. (2016). Lifetime estimation of power MOSFETs. (Thesis). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:4129

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Taskas, Petros G. “Lifetime estimation of power MOSFETs.” 2016. Thesis, Michigan State University. Accessed March 08, 2021. http://etd.lib.msu.edu/islandora/object/etd:4129.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Taskas, Petros G. “Lifetime estimation of power MOSFETs.” 2016. Web. 08 Mar 2021.

Vancouver:

Taskas PG. Lifetime estimation of power MOSFETs. [Internet] [Thesis]. Michigan State University; 2016. [cited 2021 Mar 08]. Available from: http://etd.lib.msu.edu/islandora/object/etd:4129.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Taskas PG. Lifetime estimation of power MOSFETs. [Thesis]. Michigan State University; 2016. Available from: http://etd.lib.msu.edu/islandora/object/etd:4129

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

29. Djezzar, Boualem. Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS.

Degree: 2014, Université M'Hamed Bougara Boumerdès

196 p. : ill. ; 30 cm

La miniaturisation des composants électroniques a entraîné une réduction accélérée de l'épaisseur du diélectrique de la grille des… (more)

Subjects/Keywords: MOS (électronique); Transistors MOSFET; Metal oxide semiconductors; Metal oxide semiconductor field-effect transistors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Djezzar, B. (2014). Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080123456789/1437

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Djezzar, Boualem. “Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS.” 2014. Thesis, Université M'Hamed Bougara Boumerdès. Accessed March 08, 2021. http://dlibrary.univ-boumerdes.dz:8080123456789/1437.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Djezzar, Boualem. “Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS.” 2014. Web. 08 Mar 2021.

Vancouver:

Djezzar B. Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 2014. [cited 2021 Mar 08]. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1437.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Djezzar B. Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS. [Thesis]. Université M'Hamed Bougara Boumerdès; 2014. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1437

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Johannesburg

30. Ferreira, Jan Abraham. Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette.

Degree: 2014, University of Johannesburg

M.Ing. (Electrical and Electronic Engineering)

The possibilities and technology of converters with an alternating voltage link are investigated for high specific power conversion at high… (more)

Subjects/Keywords: Electric transformers; Electric current converters; Electric currents, Alternating; Bipolar transistors; Field-effect transistors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ferreira, J. A. (2014). Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette. (Thesis). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/9983

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ferreira, Jan Abraham. “Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette.” 2014. Thesis, University of Johannesburg. Accessed March 08, 2021. http://hdl.handle.net/10210/9983.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ferreira, Jan Abraham. “Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette.” 2014. Web. 08 Mar 2021.

Vancouver:

Ferreira JA. Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette. [Internet] [Thesis]. University of Johannesburg; 2014. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10210/9983.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ferreira JA. Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette. [Thesis]. University of Johannesburg; 2014. Available from: http://hdl.handle.net/10210/9983

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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