subject:(Field effect transistors)

Addis Ababa University

1. Kidist, Moges. MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS .

Degree: 2013, Addis Ababa University

URL: http://etd.aau.edu.et/dspace/handle/123456789/4501

► Modeling and simulation of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) is very essential in order to understand the device physics, electrostatics and other important… (more)

▼ Modeling and simulation of Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) is very essential in order to understand the device physics, electrostatics and other important phenomena occurring in this device. Therefore, in this thesis the modeling and simulation of Silicon Nano Wire field Effect Transistors (SiNW FETs) is done. The modeling is done assuming both ballistic transport and transport in the presence of scattering. The modeling of SiNW FETs assuming ballistic transport is an extension of the Natori’s theory of ballistic MOSFETs. The second part of the modeling, which is developed on the assumption of scattering transport, is based on McKelvey’s flux method. When the scattering effects are assumed to be absent, the scattering model reduces to the ballistic model. Therefore, the main novelty introduced in this thesis is the extension of the previous models and the incorporation of these two models together. After the derivation of the model, its benchmarking is also done. This is accomplished by comparing the simulation results of the developed model, which is implemented using MATLAB programming, with that of the experimental and numerical simulation results. Various important parameters are extracted and used for comparison, the main ones being the On-state current (Ion), the Off-state current (Ioff), the Subthreshold Slope (SS) and drain induced barrier lowering (DIBL). The comparison shows that there is a good agreement between the simulation results of the developed model and the experimental and numerical simulation results, which indicates the validity of the model. Finally, the effect of scaling of the physical parameters on the device performance is investigated. The main parameters chosen for this investigation are the diameter of the Nano Wire (NW) and the gate oxide thickness. When a simulation is done by varying these parameters, Ion and Ioff currents are found to be affected greatly. Advisors/Committee Members: Dr. Adeyabeba Abera (advisor).

Subjects/Keywords: SILICON NANOWIRE; TRANSISTORS; FIELD EFFECT

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APA (6^th Edition):

Kidist, M. (2013). MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS . (Thesis). Addis Ababa University. Retrieved from http://etd.aau.edu.et/dspace/handle/123456789/4501

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Kidist, Moges. “MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS .” 2013. Thesis, Addis Ababa University. Accessed March 08, 2021. http://etd.aau.edu.et/dspace/handle/123456789/4501.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Kidist, Moges. “MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS .” 2013. Web. 08 Mar 2021.

Vancouver:

Kidist M. MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS . [Internet] [Thesis]. Addis Ababa University; 2013. [cited 2021 Mar 08]. Available from: http://etd.aau.edu.et/dspace/handle/123456789/4501.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kidist M. MODELING OF SILICON NANOWIRE FIELD EFFECT TRANSISTORS . [Thesis]. Addis Ababa University; 2013. Available from: http://etd.aau.edu.et/dspace/handle/123456789/4501

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Hong Kong University of Science and Technology

2. Cagang, Aldrine Abenoja CBME. Graphene-based field effect transistor sensors.

Degree: 2017, Hong Kong University of Science and Technology

URL: http://repository.ust.hk/ir/Record/1783.1-91117 ; https://doi.org/10.14711/thesis-991012551768503412 ; http://repository.ust.hk/ir/bitstream/1783.1-91117/1/th_redirect.html

► Graphene has attracted a large amount of attention in sensing applications due to its remarkable properties such as large surface area, high carrier mobility and… (more)

▼ Graphene has attracted a large amount of attention in sensing applications due to its remarkable properties such as large surface area, high carrier mobility and sensitivity which make it ideal for the field. Graphene-based field effect transistor (GFET) in particular is an extremely sensitive platform for detecting various surface modulations and interactions. However, GFETs still have a number of challenges that hinder its full potential such as selectivity and reliability. This thesis presents two main works with GFET sensors. The first work involves fabricating a GFET device with two-dimensional paper networks (2DPN) as a component. The paper network serves as both a gate dielectric and an easy-to-fabricate vessel for containing the solution with the analyte species which are in this case DNA and glucose. The choice of paper enables a simpler alternative approach to the construction of a GFET device, which was shown to behave similarly to a solution-gated GFET with comparable electron-hole mobilities and Dirac points, and was able to produce current changes correlated with the analyte concentration. The second work involves the use of molecularly imprinted polymers (MIP), which were electrochemically grown on the surface of graphene to grant the GFET sensor high selectivity towards specific analyte molecules. The use of MIP allowed for the construction of a highly selective sensor without compromising the high mobility of pristine graphene. The polybithiophene-based MIP used in this work was electropolymerized on the surface of a CVD graphene, which was then shown to maintain the properties of graphene such as high carrier mobility as indicated by the I-V_g curves from its field-effect transistor (FET) device. Sensing studies using histamine as a model analyte demonstrated that the binding of the analyte with MIP induced current responses in the sensor where higher electron mobility was observed which was largely attributed to the electron sharing of histamine with the MIP during binding. The binding interaction of the MIP-analyte system was noted to play a crucial role in the detection where electron sharing and coordination is implicitly required to induce the current response.

Subjects/Keywords: Field-effect transistors ; Detectors ; Graphene

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APA (6^th Edition):

Cagang, A. A. C. (2017). Graphene-based field effect transistor sensors. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-91117 ; https://doi.org/10.14711/thesis-991012551768503412 ; http://repository.ust.hk/ir/bitstream/1783.1-91117/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Cagang, Aldrine Abenoja CBME. “Graphene-based field effect transistor sensors.” 2017. Thesis, Hong Kong University of Science and Technology. Accessed March 08, 2021. http://repository.ust.hk/ir/Record/1783.1-91117 ; https://doi.org/10.14711/thesis-991012551768503412 ; http://repository.ust.hk/ir/bitstream/1783.1-91117/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Cagang, Aldrine Abenoja CBME. “Graphene-based field effect transistor sensors.” 2017. Web. 08 Mar 2021.

Vancouver:

Cagang AAC. Graphene-based field effect transistor sensors. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2017. [cited 2021 Mar 08]. Available from: http://repository.ust.hk/ir/Record/1783.1-91117 ; https://doi.org/10.14711/thesis-991012551768503412 ; http://repository.ust.hk/ir/bitstream/1783.1-91117/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cagang AAC. Graphene-based field effect transistor sensors. [Thesis]. Hong Kong University of Science and Technology; 2017. Available from: http://repository.ust.hk/ir/Record/1783.1-91117 ; https://doi.org/10.14711/thesis-991012551768503412 ; http://repository.ust.hk/ir/bitstream/1783.1-91117/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Rochester Institute of Technology

3. Barth, Michael. Development of a deep submicron fabrication process for tunneling field effect transistors.

Degree: Electrical Engineering, 2011, Rochester Institute of Technology

URL: https://scholarworks.rit.edu/theses/1240

► The requirements placed upon next-generation devices include high on-state current, low power supply voltages, and low subthreshold swing. Tunneling Field Effect Transistors (TFETs) have been… (more)

Subjects/Keywords: TFET; Tunneling; Tunneling field effect transistors

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APA (6^th Edition):

Barth, M. (2011). Development of a deep submicron fabrication process for tunneling field effect transistors. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/1240

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Barth, Michael. “Development of a deep submicron fabrication process for tunneling field effect transistors.” 2011. Thesis, Rochester Institute of Technology. Accessed March 08, 2021. https://scholarworks.rit.edu/theses/1240.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Barth, Michael. “Development of a deep submicron fabrication process for tunneling field effect transistors.” 2011. Web. 08 Mar 2021.

Vancouver:

Barth M. Development of a deep submicron fabrication process for tunneling field effect transistors. [Internet] [Thesis]. Rochester Institute of Technology; 2011. [cited 2021 Mar 08]. Available from: https://scholarworks.rit.edu/theses/1240.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Barth M. Development of a deep submicron fabrication process for tunneling field effect transistors. [Thesis]. Rochester Institute of Technology; 2011. Available from: https://scholarworks.rit.edu/theses/1240

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Cornell University

4. Pozdin, Vladimir. Design And Growth Of Organic Semiconductors For Organic Thin Film Transistors.

Degree: PhD, Materials Science and Engineering, 2011, Cornell University

URL: http://hdl.handle.net/1813/33640

► Organic field-effect transistors are attracting much attention due to possible applications in flexible electronics, but low electronic performance and stability remain challenges to realizing such… (more)

▼ Organic field-effect transistors are attracting much attention due to possible applications in flexible electronics, but low electronic performance and stability remain challenges to realizing such applications. Nevertheless, molecular semiconductors have already been successfully integrated in commercial products such as organic displays, luminaires, and photovoltaics. While polymeric materials have historically lagged behind, they are currently gaining significant attention due to their ease of processing, which does not require a vacuum deposition system. Polymeric materials present a number of challenges, from designing the structure of the monomer to finding the optimum molecular weight. We present an exhaustive structure-property relationship study of a newly synthesized family of thienoacenes. Based on the results of our study, we suggest C2 symmetry for the repeat unit as a new design criterion to aid in the development of future polymeric semiconductors. In addition, we investigate the thermal stability of our polymers using ex-situ and in-situ X-ray scattering. We identify an irreversible reorganization due to solution processing, as well as a reversible thermal expansion with linear expansion coefficient of 2x10-4 °C-1. By optimizing polymer structure and processing conditions, we have achieved a field-effect hole mobility of 0.3 cm2/Vs and environmental stability exceeding one year. Even though molecular electronics, such as OLEDs with AlQ3, have already been commercialized, the fundamental questions of charge transport and trapping have not been answered for these materials, owing to the high degree of anisotropy in molecular thin films. We report an unexpected reorganization of molecular thin films of pentacene on commonly used SiO2 substrates treated with a self-assembled monolayer under inert conditions. In addition, we investigated the process of solvent annealing of an insoluble molecular semiconductor. The method of solvent annealing is further demonstrated as a feasible process to improve crystallinity in organic films without the adverse effects of thermal annealing. Advisors/Committee Members: Malliaras, George G (chair), Brock, Joel Donald (committee member), Sine, Wesley (committee member).

Subjects/Keywords: organic semiconductors; field-effect transistors; giwaxs

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APA (6^th Edition):

Pozdin, V. (2011). Design And Growth Of Organic Semiconductors For Organic Thin Film Transistors. (Doctoral Dissertation). Cornell University. Retrieved from http://hdl.handle.net/1813/33640

Chicago Manual of Style (16^th Edition):

Pozdin, Vladimir. “Design And Growth Of Organic Semiconductors For Organic Thin Film Transistors.” 2011. Doctoral Dissertation, Cornell University. Accessed March 08, 2021. http://hdl.handle.net/1813/33640.

MLA Handbook (7^th Edition):

Pozdin, Vladimir. “Design And Growth Of Organic Semiconductors For Organic Thin Film Transistors.” 2011. Web. 08 Mar 2021.

Vancouver:

Pozdin V. Design And Growth Of Organic Semiconductors For Organic Thin Film Transistors. [Internet] [Doctoral dissertation]. Cornell University; 2011. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/1813/33640.

Council of Science Editors:

Pozdin V. Design And Growth Of Organic Semiconductors For Organic Thin Film Transistors. [Doctoral Dissertation]. Cornell University; 2011. Available from: http://hdl.handle.net/1813/33640

University of Johannesburg

5. Vorster, Adriaan. Die ontwikkeling van 'n hoëdrywing skakelaar met 'n matriks van mosfet skakelelemente.

Degree: 2014, University of Johannesburg

URL: http://hdl.handle.net/10210/9539

►

M.Ing. (Electrical and Electronic Engineering)

This thesis covers the development of the Mosmatrix, a high speed, high power switch which is implemented with an array… (more)

Subjects/Keywords: Metal oxide semiconductor field-effect transistors

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APA (6^th Edition):

Vorster, A. (2014). Die ontwikkeling van 'n hoëdrywing skakelaar met 'n matriks van mosfet skakelelemente. (Thesis). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/9539

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Vorster, Adriaan. “Die ontwikkeling van 'n hoëdrywing skakelaar met 'n matriks van mosfet skakelelemente.” 2014. Thesis, University of Johannesburg. Accessed March 08, 2021. http://hdl.handle.net/10210/9539.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Vorster, Adriaan. “Die ontwikkeling van 'n hoëdrywing skakelaar met 'n matriks van mosfet skakelelemente.” 2014. Web. 08 Mar 2021.

Vancouver:

Vorster A. Die ontwikkeling van 'n hoëdrywing skakelaar met 'n matriks van mosfet skakelelemente. [Internet] [Thesis]. University of Johannesburg; 2014. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10210/9539.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vorster A. Die ontwikkeling van 'n hoëdrywing skakelaar met 'n matriks van mosfet skakelelemente. [Thesis]. University of Johannesburg; 2014. Available from: http://hdl.handle.net/10210/9539

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Oregon State University

6. Chen, David Wei. A MOSFET integrated circuit shift register.

Degree: MS, Electrical and Electronics Engineering, 1969, Oregon State University

URL: http://hdl.handle.net/1957/46434

► This paper is concerned with the design of a 21-bit metal-oxide-semiconductor field-effect transistor (MOSFET) integrated circuit static shift register. This circuit consists of three separate… (more)

Subjects/Keywords: Field-effect transistors

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APA (6^th Edition):

Chen, D. W. (1969). A MOSFET integrated circuit shift register. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/46434

Chicago Manual of Style (16^th Edition):

Chen, David Wei. “A MOSFET integrated circuit shift register.” 1969. Masters Thesis, Oregon State University. Accessed March 08, 2021. http://hdl.handle.net/1957/46434.

MLA Handbook (7^th Edition):

Chen, David Wei. “A MOSFET integrated circuit shift register.” 1969. Web. 08 Mar 2021.

Vancouver:

Chen DW. A MOSFET integrated circuit shift register. [Internet] [Masters thesis]. Oregon State University; 1969. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/1957/46434.

Council of Science Editors:

Chen DW. A MOSFET integrated circuit shift register. [Masters Thesis]. Oregon State University; 1969. Available from: http://hdl.handle.net/1957/46434

Columbia University

7. Masurkar, Amrita Vijay. Charge Injection and Transport in Pentacene Field-Effect Transistors.

Degree: 2017, Columbia University

URL: https://doi.org/10.7916/D8SN0NCH

► Since the seminal discovery of conductive polymers four decades ago, organic electronics has grown from an exploratory field to an industry offering novel consumer products.… (more)

▼ Since the seminal discovery of conductive polymers four decades ago, organic electronics has grown from an exploratory field to an industry offering novel consumer products. Research has led to the synthesis of new organic molecules and polymers and their applications: organic field-effect transistors (OFETs), organic light-emitting diodes, and organic photovoltaics. The goal for research as well as for industry is producing low-cost, flexible, and, ultimately, sustainable, electronics. Although on the rise, organic electronics faces several challenges: air instability, reliability, and scaling, to name a few. And despite that organic devices and larger systems have been demonstrated, there remains a gap in understanding underlying mechanisms behind light absorption, photoconduction, charge transport and conduction in them. The primary purpose of this thesis is to use a relatively under utilized technique, photocurrent microscopy (PCM), to directly probe charge carriers in pentacene and 6,13-Bis(triisopropylsilylethynyl) (TIPS) pentacene FETs to learn about charge injection and transport. The latter part of the thesis focuses on the use of thiols to modify electrode properties to both increase charge injection efficiency and to provide passivation to low-work function metal electrodes. It is demonstrated for the first time experimentally by directly probing the OFET channel that top-contact geometry OFETs suffer minimally from a charge injection barrier, and that trap filling and altering of trap density-of-states in the channel is directly observable with PCM. PCM was used to investigate grains and grain boundaries in TIPS-pentacene devices. By varying gate bias, it was shown that the PCM maps of grains are not simply a result of varying absorption on the surface of the film; rather, it is an artefact of charge transport between grains and grain boundaries. Through this study, PCM was shown to be a useful, large-area scanning technique, for observing transport in devices with large (on the order of 50 μm) grains. This is particularly relevant as solution-proccessable films are likely to dominate the flexible electronics industry. The thiol portion of this thesis compares the impact of two distinct thiols on bottom-contact pentacene FETs: perfluorodecanethiol (PFDT) and pentafluorobenzenethiol (PFBT). Using X-ray photoelectron spectroscopy to measure metal oxidation, it was determined that short aromatic thiols are poor choices for low work-function metal passivation. In addition, both passivation and charge injection enhancement can be achieved with long fluorinated alkanethiols. However, there is a trade-off between passivation and on-current. The enhancement of on-current in thiol-treated Cu-electrode pentacene devices is most likely not morphology related, due to the fact that PFDT was found to be in a standing-up orientation on the metal surface. Additionally, it was demonstrated that although highly electronegative atoms such as fluorine can beneficially modify metal work…

Subjects/Keywords: Electrical engineering; Organic electronics; Field-effect transistors

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APA (6^th Edition):

Masurkar, A. V. (2017). Charge Injection and Transport in Pentacene Field-Effect Transistors. (Doctoral Dissertation). Columbia University. Retrieved from https://doi.org/10.7916/D8SN0NCH

Chicago Manual of Style (16^th Edition):

Masurkar, Amrita Vijay. “Charge Injection and Transport in Pentacene Field-Effect Transistors.” 2017. Doctoral Dissertation, Columbia University. Accessed March 08, 2021. https://doi.org/10.7916/D8SN0NCH.

MLA Handbook (7^th Edition):

Masurkar, Amrita Vijay. “Charge Injection and Transport in Pentacene Field-Effect Transistors.” 2017. Web. 08 Mar 2021.

Vancouver:

Masurkar AV. Charge Injection and Transport in Pentacene Field-Effect Transistors. [Internet] [Doctoral dissertation]. Columbia University; 2017. [cited 2021 Mar 08]. Available from: https://doi.org/10.7916/D8SN0NCH.

Council of Science Editors:

Masurkar AV. Charge Injection and Transport in Pentacene Field-Effect Transistors. [Doctoral Dissertation]. Columbia University; 2017. Available from: https://doi.org/10.7916/D8SN0NCH

Hong Kong University of Science and Technology

8. Zhang, Mingwei. Fabrication and characterization of single-layer graphene transferred on hexagonal boron nitride.

Degree: 2013, Hong Kong University of Science and Technology

URL: http://repository.ust.hk/ir/Record/1783.1-80933 ; https://doi.org/10.14711/thesis-b1254464 ; http://repository.ust.hk/ir/bitstream/1783.1-80933/1/th_redirect.html

► Graphene, a two-dimensional single atomic layer of graphite, has emerged as a promising material with interesting physical and chemical properties and high potential for various… (more)

▼ Graphene, a two-dimensional single atomic layer of graphite, has emerged as a promising material with interesting physical and chemical properties and high potential for various applications such as sensors, transparent electrodes and electronics. Due to its high carrier mobility, graphene has gained much interest as a possible candidate to extend beyond silicon complementary metal-oxide-semiconductor technology for future nano-electronic devices. In this thesis, two different kinds of graphene field-effect transistors (G-FETs) have been fabricated using exfoliated single-layer graphene (SLG). These two kinds of G-FETs are used for transport measurement and capacitance measurement respectively. The electronic properties of graphene have been investigated through measurements of the mobilities, quantum Hall effects, Shubnikov-de-Haas oscillations and quantum capacitance of these G-FETs. Properties of graphene affected by resonant impurities and other different kinds of impurities are first investigated. We have successfully introduced silver adatoms to graphene as resonant impurities and observed the induced midgap states. In order to have a clearer picture of resonant impurities, it is very necessary to minimize or even exclude the effects that come from the induced electron-hole puddles and charged impurities by the substrate SiO₂ and the dielectric layers of Y₂O₃ used for the G-FET devices. Thus h-BN is introduced since h-BN can largely improve the performance of the G-FETs and reflect the intrinsic graphene’s electronic properties. Meanwhile, the technique of transferring h-BN onto graphene opens the possibility to fabricate more complex 3-dimensional structures using 2-dimensional materials, which is a very hot topic recently in the field of 2D material research. I have independently developed three different approaches to fabricate single-layer graphene-hexagonal boron nitride (SLG/h-BN ) structure, namely the wet-transfer approach, the direct-transfer approach and the dry-transfer approach. Through transferring, I fabricated transport G-FETs using h-BN as substrates and capacitance G-FETs using h-BN as the top-gate insulators. Pronounced improvement is observed in the performance of both transport G-FETs and capacitance G-FETs. From the transport measurement of the transferred G-FETs, the mobility of graphene is prominently enhanced compared to that of SLG/SiO₂ samples. From the capacitance measurement of the transferred G-FETs, Landau level quantization is observed clearly. Comparing to the capacitance G-FETs using other top-gate insulator materials such as Y₂O₃ and Al₂O₃, Landau level quantization is normally suppressed by the insulator-induced electron-hole puddles and charged impurities. The improvement in the performance of transferred G-FETs implies that h-BN introduces less electron-hole puddles and charged impurities to graphene in comparison with other materials such as SiO₂,…

Subjects/Keywords: Field-effect transistors ; Graphene ; Boron nitride

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APA (6^th Edition):

Zhang, M. (2013). Fabrication and characterization of single-layer graphene transferred on hexagonal boron nitride. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-80933 ; https://doi.org/10.14711/thesis-b1254464 ; http://repository.ust.hk/ir/bitstream/1783.1-80933/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Zhang, Mingwei. “Fabrication and characterization of single-layer graphene transferred on hexagonal boron nitride.” 2013. Thesis, Hong Kong University of Science and Technology. Accessed March 08, 2021. http://repository.ust.hk/ir/Record/1783.1-80933 ; https://doi.org/10.14711/thesis-b1254464 ; http://repository.ust.hk/ir/bitstream/1783.1-80933/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Zhang, Mingwei. “Fabrication and characterization of single-layer graphene transferred on hexagonal boron nitride.” 2013. Web. 08 Mar 2021.

Vancouver:

Zhang M. Fabrication and characterization of single-layer graphene transferred on hexagonal boron nitride. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2013. [cited 2021 Mar 08]. Available from: http://repository.ust.hk/ir/Record/1783.1-80933 ; https://doi.org/10.14711/thesis-b1254464 ; http://repository.ust.hk/ir/bitstream/1783.1-80933/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang M. Fabrication and characterization of single-layer graphene transferred on hexagonal boron nitride. [Thesis]. Hong Kong University of Science and Technology; 2013. Available from: http://repository.ust.hk/ir/Record/1783.1-80933 ; https://doi.org/10.14711/thesis-b1254464 ; http://repository.ust.hk/ir/bitstream/1783.1-80933/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Hong Kong University of Science and Technology

9. Ahmed, Zubair ECE. Modeling carbon nanotube (CNT) distribution variations in CNTFETs.

Degree: 2016, Hong Kong University of Science and Technology

URL: http://repository.ust.hk/ir/Record/1783.1-101288 ; https://doi.org/10.14711/thesis-b1626271 ; http://repository.ust.hk/ir/bitstream/1783.1-101288/1/th_redirect.html

► Carbon Nanotube (CNT) transistor has been widely studied as an emerging technology for circuit applications. The recently demonstrated CNT computer serves as a major achievement… (more)

▼ Carbon Nanotube (CNT) transistor has been widely studied as an emerging technology for circuit applications. The recently demonstrated CNT computer serves as a major achievement of the technology. However, compared to traditional CMOS devices, the fluctuation in CNT number, separation and diameter leads to additional and major sources of device-to-device variation for CNTFETs. Quantifying the impact of these CNT distribution variations requires modeling these variations into a CNTFET device model. The first requirement to model the CNT distribution variation is to develop a CNTFET gate capacitance model valid for any generic spacing amongst CNTs. Our proposed capacitance model use the conformal mapping approach to simplify the planar gate CNTFET geometry into well-known structures thus deriving analytical expressions of the capacitance. The capacitance model shows improved accuracy, with maximum error of 2%, in simulating the practical CNTFET geometries. Additionally a capacitance model for conformal top-gated CNTFET structure is also proposed. Probability density functions of the CNT distribution variations are also required to realistically estimate their impact on CNTFET drive current. Therefore, using statistical methods, we identify the probability density functions of the channel CNT separations and diameters, and verified them using experimental data. Furthermore, a new generic methodology to incorporate the CNT separation and diameter variations into available CNTFET models is also proposed. Simulations of CNTFET drive current shows over-estimated results, by more than 10%, when realistic probability distribution is ignored for uniform distribution. Our analysis also shows that the probability of having a uniform CNT channel region is negligible thus highlighting the contribution of our work. Comparison of a CNTFET against a conventional planar CMOS transistor is also done for the same mean drive current for variation. We found that the CNT process needed to be improved, both in terms of CNT density and variation, for CNTFET to challenge the CMOS technology.

Subjects/Keywords: Carbon nanotubes ; Field-effect transistors ; Materials

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APA (6^th Edition):

Ahmed, Z. E. (2016). Modeling carbon nanotube (CNT) distribution variations in CNTFETs. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-101288 ; https://doi.org/10.14711/thesis-b1626271 ; http://repository.ust.hk/ir/bitstream/1783.1-101288/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Ahmed, Zubair ECE. “Modeling carbon nanotube (CNT) distribution variations in CNTFETs.” 2016. Thesis, Hong Kong University of Science and Technology. Accessed March 08, 2021. http://repository.ust.hk/ir/Record/1783.1-101288 ; https://doi.org/10.14711/thesis-b1626271 ; http://repository.ust.hk/ir/bitstream/1783.1-101288/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Ahmed, Zubair ECE. “Modeling carbon nanotube (CNT) distribution variations in CNTFETs.” 2016. Web. 08 Mar 2021.

Vancouver:

Ahmed ZE. Modeling carbon nanotube (CNT) distribution variations in CNTFETs. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2016. [cited 2021 Mar 08]. Available from: http://repository.ust.hk/ir/Record/1783.1-101288 ; https://doi.org/10.14711/thesis-b1626271 ; http://repository.ust.hk/ir/bitstream/1783.1-101288/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ahmed ZE. Modeling carbon nanotube (CNT) distribution variations in CNTFETs. [Thesis]. Hong Kong University of Science and Technology; 2016. Available from: http://repository.ust.hk/ir/Record/1783.1-101288 ; https://doi.org/10.14711/thesis-b1626271 ; http://repository.ust.hk/ir/bitstream/1783.1-101288/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Hong Kong University of Science and Technology

10. Ma, Shenhui MAE. The study of high-performance field-effect transistor based biosensors for detection of biomolecules.

Degree: 2019, Hong Kong University of Science and Technology

URL: http://repository.ust.hk/ir/Record/1783.1-105897 ; https://doi.org/10.14711/thesis-991012763469203412 ; http://repository.ust.hk/ir/bitstream/1783.1-105897/1/th_redirect.html

► Impedimetric and potentiometric biosensors have attracted considerable attention due to high sensitivity, high selectivity, rapid response time, low cost as well as miniaturization, and large… (more)

▼ Impedimetric and potentiometric biosensors have attracted considerable attention due to high sensitivity, high selectivity, rapid response time, low cost as well as miniaturization, and large numbers of them have been applied in the fields of pH detection, DNA detection, protein detection, cell analysis etc. However, compared with potentiometric field-effect transistor (FET) biosensors, impedimetric biosensors have the disadvantage of lower selectivity and they can not directly perform real-time detection. Meanwhile, there are still some limitations and challenges which have restricted the performance of FET-based biosensors at this moment, such as the limitation of Debye length screening. Based on the current development, this dissertation designed, fabricated and characterized the impedimetric and FET-based biosensors for biomolecule detection with high performance. An impedimetric polymer-based micro electrochemical sensor (PMES) was designed and fabricated to achieve rapid, label-free and cost-effective DNA detection. The relationship between device dimension and PMES’s sensitivity was studied, which revealed that the PMES with smallest dimension has shown best performance. The PMES chip has realized effective and rapid detection of DNA concentration with the sensitivity of 3.77 kΩ/nM and limit of detection (LOD) of 10 nM by the electrochemical impedance spectroscopy (EIS). Moreover, rapid label-free detection of Cordyceps sinensis (CorS) based on DNA hybridization by the PMES chip with the sensitivity of 7.94 kΩ/nM (2.48 kΩ·μl/ng) and the LOD of 720 pM (2.3 ng/μl) was successfully achieved. A dual-gate nanoribbon-based ion-sensitive field-effect transistor (NR-ISFET) biosensor for direct label-free DNA detection with high sensitivity was successfully designed, simulated and fabricated. Real-time conductance measurements of the NR-ISFET biosensors with different sample delivery configuration including a cavity and microchannel were conducted in solution-gate (SG) and dual-gate (DG) working modes. It reveals that the performance of NR-ISFET biosensor system was enhanced by using a microchannel as compared to a cavity due to better surface modification and enhanced mass transport. By using a microchannel for sample delivery, the NR-ISFET biosensor in DG mode exhibited LOD of 50 pM and sensitivity of 0.5054 mS/dec in a wide working range spanning four orders of magnitude, and significantly improve specificity compared with these in SG mode. According to the simulation and experimental results, the enhancement of sensor sensitivity and reduction of LOD can be attributed to the application of back gate. A polyethylene glycol (PEG)-modified dual-gate NR-ISFET biosensor was designed and fabricated for direct, label-free and real-time protein detection in high ionic strength solution and human plasma with high sensitivity and high specificity. The application of PEG modification increased the effective Debye length, which enabled the direct protein detection in high ionic strength solution and human plasma. The…

Subjects/Keywords: Field-effect transistors ; Electrochemical sensors ; Biosensors ; Biomolecules

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APA (6^th Edition):

Ma, S. M. (2019). The study of high-performance field-effect transistor based biosensors for detection of biomolecules. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-105897 ; https://doi.org/10.14711/thesis-991012763469203412 ; http://repository.ust.hk/ir/bitstream/1783.1-105897/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Ma, Shenhui MAE. “The study of high-performance field-effect transistor based biosensors for detection of biomolecules.” 2019. Thesis, Hong Kong University of Science and Technology. Accessed March 08, 2021. http://repository.ust.hk/ir/Record/1783.1-105897 ; https://doi.org/10.14711/thesis-991012763469203412 ; http://repository.ust.hk/ir/bitstream/1783.1-105897/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Ma, Shenhui MAE. “The study of high-performance field-effect transistor based biosensors for detection of biomolecules.” 2019. Web. 08 Mar 2021.

Vancouver:

Ma SM. The study of high-performance field-effect transistor based biosensors for detection of biomolecules. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2019. [cited 2021 Mar 08]. Available from: http://repository.ust.hk/ir/Record/1783.1-105897 ; https://doi.org/10.14711/thesis-991012763469203412 ; http://repository.ust.hk/ir/bitstream/1783.1-105897/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ma SM. The study of high-performance field-effect transistor based biosensors for detection of biomolecules. [Thesis]. Hong Kong University of Science and Technology; 2019. Available from: http://repository.ust.hk/ir/Record/1783.1-105897 ; https://doi.org/10.14711/thesis-991012763469203412 ; http://repository.ust.hk/ir/bitstream/1783.1-105897/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Illinois – Urbana-Champaign

11. Kim, Ji Hun. Optimization of purely semiconducting carbon nanotube complementary field effect transistors.

Degree: MS, 1200, 2013, University of Illinois – Urbana-Champaign

URL: http://hdl.handle.net/2142/42442

► Among the remarkable variety of semiconducting nanomaterials that have been discovered, single walled carbon nanotubes (SWNTs) have properties that make them uniquely well suited for… (more)

Subjects/Keywords: carbon nanotube; carbon nanotube field-effect transistors

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APA (6^th Edition):

Kim, J. H. (2013). Optimization of purely semiconducting carbon nanotube complementary field effect transistors. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/42442

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Kim, Ji Hun. “Optimization of purely semiconducting carbon nanotube complementary field effect transistors.” 2013. Thesis, University of Illinois – Urbana-Champaign. Accessed March 08, 2021. http://hdl.handle.net/2142/42442.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Kim, Ji Hun. “Optimization of purely semiconducting carbon nanotube complementary field effect transistors.” 2013. Web. 08 Mar 2021.

Vancouver:

Kim JH. Optimization of purely semiconducting carbon nanotube complementary field effect transistors. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2013. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/2142/42442.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kim JH. Optimization of purely semiconducting carbon nanotube complementary field effect transistors. [Thesis]. University of Illinois – Urbana-Champaign; 2013. Available from: http://hdl.handle.net/2142/42442

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Southern California

12. Zhang, Rui. Surface functionalization of nanomaterials and the development of nanobiosensors.

Degree: PhD, Chemistry, 2012, University of Southern California

URL: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/107242/rec/6237

► In the past 20 years, material scientists and engineers have progressively miniaturized the materials that constitute the building blocks of various biomedical devices. This progressive… (more)

▼ In the past 20 years, material scientists and engineers have progressively miniaturized the materials that constitute the building blocks of various biomedical devices. This progressive downscaling has led to the creation of materials with at least one critical dimension falling within the 1-100 nm range. These nanomaterials have been considered as ideal candidates for biosensing applications due to their high surface-to-volume ratio and small sizes. A diversity of sensor architectures has been designed and fabricated during the last decade that utilizes different nanomaterials as sensing elements. Among them, sensors based on FETs have drawn increasing attention because of their capability of performing rapid and label-free detections. Since the first demonstration of FET-based biosensors in 2001, people have achieved detections of proteins, oligonucleotides and viruses with high sensitivity and selectivity. However, to facilitate the widespread adoption of nanobiosensing technology, researchers still need to address a few challenges, including multiplexing, cost efficiency and signal reproducibility. This dissertation tries to tackle these challenges by improving nanosensor fabrication techniques and developing novel surface functionalization methods. ❧ Chapter 1 briefly introduces the fundamentals of nanobiosensors, including nanomaterial synthesis, device fabrication and sensing setup, and discusses current challenges in the nanobiosensing field. ❧ Chapter 2 describes a newly designed electroactive surface modifier that can be used in selective biofunctionalization of nanomaterials. This molecule offers promising control over the surface reaction of each sensor in an array and can be considered as a key element in the fabrication of high-density biosensor arrays for multiplexed biosensing in the future. ❧ Chapter 3 focuses on sensing platforms based on solution grown ZnO nanostructures. Mass production of ZnO nanowires and nanobelts are prepared using a low cost, low temperature hydrothermal method, and used to fabricate back-gated FETs. By applying a post-synthesis annealing step to the ZnO products, we adjust the doping level of the nanowires and nanobelts, and thus significantly improve their electrical properties. These FETs shows comparable performance with those based on ZnO nanostructures synthesized via vapor-phase approaches. ❧ Chapter 4 introduces a new class of small affinity binding agents, cyclotides, as capturing probes in nanobiosensing. These backbone-cyclized polypeptides with a disulfide-stabilized core are chemically more stable than conventional antibodies and can be produced in relatively large quantities at low cost. A cyclotide, MCoTI-II, was integrated with In₂O₃ NW mats and sensors for trypsin sensing in this chapter. ❧ In the end, chapter 5 studies top-down polysilicon nanoribbon sensors and their sensing applications. Top-down sensors are believed to have better device uniformity and thus can yield more reliable sensing signals. In this chapter, polysilicon nanoribbon FETs are… Advisors/Committee Members: Thompson, Mark E. (Committee Chair), Zhou, Chongwu (Committee Member), Goo, Edward K. (Committee Member).

Subjects/Keywords: nanomaterials; surface functionalization; biosensors; field-effect transistors

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APA (6^th Edition):

Zhang, R. (2012). Surface functionalization of nanomaterials and the development of nanobiosensors. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/107242/rec/6237

Chicago Manual of Style (16^th Edition):

Zhang, Rui. “Surface functionalization of nanomaterials and the development of nanobiosensors.” 2012. Doctoral Dissertation, University of Southern California. Accessed March 08, 2021. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/107242/rec/6237.

MLA Handbook (7^th Edition):

Zhang, Rui. “Surface functionalization of nanomaterials and the development of nanobiosensors.” 2012. Web. 08 Mar 2021.

Vancouver:

Zhang R. Surface functionalization of nanomaterials and the development of nanobiosensors. [Internet] [Doctoral dissertation]. University of Southern California; 2012. [cited 2021 Mar 08]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/107242/rec/6237.

Council of Science Editors:

Zhang R. Surface functionalization of nanomaterials and the development of nanobiosensors. [Doctoral Dissertation]. University of Southern California; 2012. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/107242/rec/6237

University of Arizona

13. Gray, Paul R., 1942-. Transient performance of arbitrarily doped four terminal field-effect transistors .

Degree: 1965, University of Arizona

URL: http://hdl.handle.net/10150/319801

Subjects/Keywords: Field-effect transistors.

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APA (6^th Edition):

Gray, Paul R., 1. (1965). Transient performance of arbitrarily doped four terminal field-effect transistors . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/319801

Chicago Manual of Style (16^th Edition):

Gray, Paul R., 1942-. “Transient performance of arbitrarily doped four terminal field-effect transistors .” 1965. Masters Thesis, University of Arizona. Accessed March 08, 2021. http://hdl.handle.net/10150/319801.

MLA Handbook (7^th Edition):

Gray, Paul R., 1942-. “Transient performance of arbitrarily doped four terminal field-effect transistors .” 1965. Web. 08 Mar 2021.

Vancouver:

Gray, Paul R. 1. Transient performance of arbitrarily doped four terminal field-effect transistors . [Internet] [Masters thesis]. University of Arizona; 1965. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10150/319801.

Council of Science Editors:

Gray, Paul R. 1. Transient performance of arbitrarily doped four terminal field-effect transistors . [Masters Thesis]. University of Arizona; 1965. Available from: http://hdl.handle.net/10150/319801

University of Arizona

14. Hudson, Pete Henry, 1940-. Frequency performance of four terminal field-effect transistors .

Degree: 1964, University of Arizona

URL: http://hdl.handle.net/10150/319534

Subjects/Keywords: Field-effect transistors.

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APA (6^th Edition):

Hudson, Pete Henry, 1. (1964). Frequency performance of four terminal field-effect transistors . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/319534

Chicago Manual of Style (16^th Edition):

Hudson, Pete Henry, 1940-. “Frequency performance of four terminal field-effect transistors .” 1964. Masters Thesis, University of Arizona. Accessed March 08, 2021. http://hdl.handle.net/10150/319534.

MLA Handbook (7^th Edition):

Hudson, Pete Henry, 1940-. “Frequency performance of four terminal field-effect transistors .” 1964. Web. 08 Mar 2021.

Vancouver:

Hudson, Pete Henry 1. Frequency performance of four terminal field-effect transistors . [Internet] [Masters thesis]. University of Arizona; 1964. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10150/319534.

Council of Science Editors:

Hudson, Pete Henry 1. Frequency performance of four terminal field-effect transistors . [Masters Thesis]. University of Arizona; 1964. Available from: http://hdl.handle.net/10150/319534

University of Arizona

15. Clements, John Lawrence, 1940-. Systematic modeling of the metal-oxide-semiconductor field effect transistor .

Degree: 1965, University of Arizona

URL: http://hdl.handle.net/10150/347504

Subjects/Keywords: Field-effect transistors.

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APA (6^th Edition):

Clements, John Lawrence, 1. (1965). Systematic modeling of the metal-oxide-semiconductor field effect transistor . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/347504

Chicago Manual of Style (16^th Edition):

Clements, John Lawrence, 1940-. “Systematic modeling of the metal-oxide-semiconductor field effect transistor .” 1965. Masters Thesis, University of Arizona. Accessed March 08, 2021. http://hdl.handle.net/10150/347504.

MLA Handbook (7^th Edition):

Clements, John Lawrence, 1940-. “Systematic modeling of the metal-oxide-semiconductor field effect transistor .” 1965. Web. 08 Mar 2021.

Vancouver:

Clements, John Lawrence 1. Systematic modeling of the metal-oxide-semiconductor field effect transistor . [Internet] [Masters thesis]. University of Arizona; 1965. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10150/347504.

Council of Science Editors:

Clements, John Lawrence 1. Systematic modeling of the metal-oxide-semiconductor field effect transistor . [Masters Thesis]. University of Arizona; 1965. Available from: http://hdl.handle.net/10150/347504

University of Hong Kong

16. 蕭錫霖. Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application.

Degree: 2015, University of Hong Kong

URL: http://hdl.handle.net/10722/222371

► Magnetic sensors have a wide range of applications in proximity sensing, position sensing, etc. Once a magnetic field is present, or there is a change… (more)

▼ Magnetic sensors have a wide range of applications in proximity sensing, position sensing, etc. Once a magnetic field is present, or there is a change of magnetic field, an electronic signal will be generated from the magnetic sensor. The Hall Effect sensor is a well-known magnetic sensor where the hall voltage varies piecewise with the magnetic field strength. The advanced CMOS technology enables the integration of magnetic sensing core, biasing circuit, amplifier, etc., into one tiny chip. Therefore the power consumption, parasitic element and manufacturing cost of the integrated magnetic sensor can be reduced. It is well-known that silicon is a material which is compatible with the integrated circuit fabrication process. However, silicon may not be a good choice for being an integrated magnetic sensor because of the low mobility property. Low mobility will degrade the performance of the magnetic sensing core, especially the magnetic field sensitivity. Recent research has improved the performance of magnetic sensing core fabricated by silicon such as the development of the metal oxide semiconductor (MOS) Hall Plate and Split-Drain Magnetic Field Effect Transistor (SD-MAGFET). These magnetic sensors are feasible for integrating with a biasing circuit, amplifier and A/D converter. Therefore a silicon magnetic sensor with high magnetic field sensitivity, reduced power consumption and less parasitic elements can be fabricated. These properties make integrated magnetic sensors popular in industrial and motion control systems, especially in mechatronic application. The operation of a mechatronic system usually involves a high operating temperature and high unwanted signal noise. Silicon magnetic sensors are capable of high performance under the above conditions. A high magnetic field changing rate is one of the main factors which degrade the performance of magnetic sensors in mechatronic application. Especially in measuring the angular position of a magnet, a fast changing magnetic field rate will cause the magnetic sensor not to move fast enough respond to the changing magnetic field. Another factor that also strongly influences magnetic field sensitivity is the geometric dimension variation of magnetic sensors. This variation is caused by the imperfect manufacturing process and it is unavoidable. In my research, a Sectorial Split-Drain (SSD) MAGFET is employed for investigation. An experiment is designed for investigating the magnetic field sensing behaviour of alternating magnetic fields. The magnetic field sensing resolution is studied through spectral analysis. The studies show that a MAGFET-based system can achieve better accuracy than traditional Hall Plate when sensing the alternating magnetic field. The underlying physics are also explored which leads to device selection guidelines for high speed, high accuracy angular position measurement. Another experiment is designed to investigate the SSD-MAGFET magnetic field sensitivity variation, whereby the sensitivity variation is induced by manufacturing…

Subjects/Keywords: Field-effect transistors

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APA (6^th Edition):

蕭錫霖. (2015). Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/222371

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

蕭錫霖. “Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application.” 2015. Thesis, University of Hong Kong. Accessed March 08, 2021. http://hdl.handle.net/10722/222371.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

蕭錫霖. “Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application.” 2015. Web. 08 Mar 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

蕭錫霖. Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. [Internet] [Thesis]. University of Hong Kong; 2015. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10722/222371.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

蕭錫霖. Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. [Thesis]. University of Hong Kong; 2015. Available from: http://hdl.handle.net/10722/222371

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

University of Hong Kong

17. Yang, Zhenyi. A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor.

Degree: 2016, University of Hong Kong

URL: http://hdl.handle.net/10722/239375

► Due to the high demand of magnetic sensors in the market nowadays, CMOS magnetic sensor sectorial SD-MAGFETs become widely used because of their compact size… (more)

▼ Due to the high demand of magnetic sensors in the market nowadays, CMOS magnetic sensor sectorial SD-MAGFETs become widely used because of their compact size and their compatibility with the standard CMOS technology. In order to make better use of sectorial SD-MAGFETs, the lateral interface charge effect, and the scaling effect is applied to it to analyze the magnetic sensitivity change. The other parameters such as the source sector angle α are also varied to show the geometric dependent magnetic sensitivity I especially investigated to address the problem of lateral Si/SiO2 interface traps of the sectorial SD-MAGFETs. Due to its special structure and its exposure to the magnetic field, the interface traps at the lateral sidewall of the channel will affect its performance. Consider complex geometry of the device, both theoretical analysis and simulation validations are provided. The interface traps are studied by different types, trap density, and trap energy level of the interface traps and their impact on the magnetic sensitivity of the sectorial SD-MAGFET. The acceptor- type traps are negatively charged when filled with electrons and magnetic sensitivity is increased by increasing IH and decreasing IDS. On the other hand, the donor-type traps are positively charged when filled with electrons and magnetic sensitivity is decreased by decreasing IH and increasing IDS. Acceptor trap energy level lies near to the valance band and the donor trap energy level lies near to the conduction band will also make the magnetic field increase. The analytical model of Hall current IH is first time proposed and shown that it is exponential decay with the time stressing and the decay rate is proportional to the fill rate of the interface traps. This proves there exists the lateral interface traps in the sectorial SD-MAGFET experimentally. The fill rate of the traps at the channel boundary is also source sector angle α dependent. The most serious deterioration of the magnetic sensitivity is observed with α = 56º. Transient sensing hysteresis and magnetic sensing dynamic range are further investigated by experiments and analytical model with charge trapping effect are proposed. Under the increasing magnetic field, the magnetic sensitivity will be affected by the interface charge trapping effect and magnetic sensitivity is inverse quadratic proportional to the source sector angle α. However, the largest magnetic sensitivity, sensing hysteresis and the largest magnetic dynamic range are achieved with different α. As a result, simulation and experimental results both provide design insights of the sectorial SD-MAGFETs. The performance of sectorial SD-MAGFETs can be improved to shrink the channel length into 0.486 μm, as high as the magnetic sensitivity 8.06 %/T is achieved. Considerable results are included to fulfil a comprehensive study on the scaling down of the sectorial SD-MAGFET. The research conducted in this thesis will provide important information for the engineer to design and process the sectorial SD-MAGFETs in the…

Subjects/Keywords: Field-effect transistors

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APA (6^th Edition):

Yang, Z. (2016). A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor. (Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/239375

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Yang, Zhenyi. “A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor.” 2016. Thesis, University of Hong Kong. Accessed March 08, 2021. http://hdl.handle.net/10722/239375.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Yang, Zhenyi. “A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor.” 2016. Web. 08 Mar 2021.

Vancouver:

Yang Z. A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor. [Internet] [Thesis]. University of Hong Kong; 2016. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10722/239375.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang Z. A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor. [Thesis]. University of Hong Kong; 2016. Available from: http://hdl.handle.net/10722/239375

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Macquarie University

18. McMahon, Christopher. Fabrication of organic field effect transistors using photosensitive active materials.

Degree: 2015, Macquarie University

URL: http://hdl.handle.net/1959.14/1069170

►

Empircal thesis.

Bibliography: pages 315-328.

Chapter One. Introduction – Chapter Two. A review of the application of photopatterning in the production of organic electronic devices… (more)

▼

Empircal thesis.

Bibliography: pages 315-328.

Chapter One. Introduction – Chapter Two. A review of the application of photopatterning in the production of organic electronic devices – Chapter Three. Instrumentation used to deposit, pattern and analyse OFET thin films – Chapter Four. Using density functional theory to model the electronic properties of small molecule organic semiconductor thin films – Chapter Five. Synthetic and experimental spectra of pentacene and its precursors – Chapter Six. Spray deposition and photopatterning of thin films for OFETs – Chapter Seven. New photopatternable precursors for thienoacene semiconductors – Chapter Eight. Conclusion

The research described in this thesis was conducted with the aim of finding a versatile group of organic semiconducting and conducting materials that could be used in a practical manner for the production of organic field effect transistors (OFETs) via a direct photopatterning process. It was established that a suitable class of materials – photosensitive Diels-Alder bridged pentacene precursors – already existed, but had not been fully exploited for this purpose.

Calculations of synthetic UV-visible, infrared and partial density of states spectra, based on models of single molecules with geometries optimised using density functional theory, proved to be useful in understanding the photochemical properties of existing semiconductor materials and precursors. The viability of these calculations was tested by comparing them with the UV-visible spectra and synchrotron based x-ray photoelectron, x-ray emission and near-edge x-ray absorption fine structure spectra of a series of robust n-type organic semiconductors with shared perylene core structures.

Narrowband UV exposures of 6,13-dihydro-6,13-methanopentacene-15-one (6,13-MPn) and 5,14-dihydro-5,14-methanopentacene-15-one (5,14-MPn) were carried out. It was found that they were sensitive to light with wavelengths < 325 nm and < 315 nm, respectively. The difference in the photosensitivity of the two pentacene precursors was utilised in a study of the means to independently pattern multiple layers of electronically active materials. It was also found that patterns could be transferred to films of the organic conductor PEDOT:PSS by photobleaching and that the resistance of the films changed in a predictable manner.

Following this, the performance of OFETs produced using 6,13-MPn and 5,14-MPn as precursors for the active semiconductor layers was studied. A measureable increase in conductivity through the source-drain channel of 6,13-MPn and 5,14-MPn based transistors resulted when they were illuminated with broadband light and simultaneously annealed at 95 ˚C and 90 ˚C, respectively. Exposing the 6,13-MPn precursor to filtered light in the range from 270-340 nm once again resulted in conversion to a semiconductor with gate voltage enhanced mobility. In the case of the 5,14-MPn transistor, the output curves appeared to be affected by carrier trapping.

Following the studies on the…

Advisors/Committee Members: Macquarie University. Department of Physics and Astronomy.

Subjects/Keywords: Field-effect transistors – Design and construction

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APA (6^th Edition):

McMahon, C. (2015). Fabrication of organic field effect transistors using photosensitive active materials. (Doctoral Dissertation). Macquarie University. Retrieved from http://hdl.handle.net/1959.14/1069170

Chicago Manual of Style (16^th Edition):

McMahon, Christopher. “Fabrication of organic field effect transistors using photosensitive active materials.” 2015. Doctoral Dissertation, Macquarie University. Accessed March 08, 2021. http://hdl.handle.net/1959.14/1069170.

MLA Handbook (7^th Edition):

McMahon, Christopher. “Fabrication of organic field effect transistors using photosensitive active materials.” 2015. Web. 08 Mar 2021.

Vancouver:

McMahon C. Fabrication of organic field effect transistors using photosensitive active materials. [Internet] [Doctoral dissertation]. Macquarie University; 2015. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/1959.14/1069170.

Council of Science Editors:

McMahon C. Fabrication of organic field effect transistors using photosensitive active materials. [Doctoral Dissertation]. Macquarie University; 2015. Available from: http://hdl.handle.net/1959.14/1069170

Hong Kong University of Science and Technology

19. Hua, Mengyuan ECE. Gate dielectric technology for high-performance GaN power MIS-HEMT and MIS-FET.

Degree: 2017, Hong Kong University of Science and Technology

URL: http://repository.ust.hk/ir/Record/1783.1-105606 ; https://doi.org/10.14711/thesis-991012552668503412 ; http://repository.ust.hk/ir/bitstream/1783.1-105606/1/th_redirect.html

► Wide-bandgap GaN-based power electronic devices are emerging as promising candidates for the next generation high-efficiency power converters owing to superior material properties such as high… (more)

▼ Wide-bandgap GaN-based power electronic devices are emerging as promising candidates for the next generation high-efficiency power converters owing to superior material properties such as high electric breakdown field, high electron saturation velocity, and high mobility in a readily available heterojunction 2-dimensional electron gas (2DEG) channel. After a decade of rapid progress in epitaxial growth, device design, processing technology, packaging technology, and gate driving techniques, GaN-on-Si lateral heterojunction power devices are being commercialized and used to implement power converters with impressive efficiency and compact size. However, the highly desirable GaN devices for application with normally-off operation, large gate swing, low gate leakage, small dynamic degradation and high stability and reliability simultaneously, are still under development. In this work, we aimed at solving these challenges with demonstrating a high-quality gate dielectric LPCVD-SiN_x at first, then integrating an effective AlN/SiN_x passivation layer with the gate dielectric to suppress dynamic on-resistance degradation, and finally, realizing the high-performance normally-off GaN MIS-FET with the highly reliable gate dielectric and effective passivation. The first part of this thesis work is focused on demonstrating the high-quality LPCVD (low pressure chemical vapor deposition)-SiN_x gate dielectric, which can suppress the gate leakage effectively and greatly enlarge the gate swing. The SiN_x deposited at 780 °C using LPCVD was employed as both gate dielectric and passivation for the GaN-based D-mode MIS-HEMT. The LPCVD-SiN_x exhibit desirable gate dielectric performance including small forward and reverse gate leakage and large breakdown electric field. Furthermore, we systematically investigated the gate leakage and breakdown mechanisms of the LPCVD-SiN_x thin film deposited on AlGaN/GaN heterostructures. The dominant mechanism of the leakage current through the LPCVD-SiN_x gate dielectric is identified to be Poole-Frenkel emission at low electric field and Fowler-Nordheim tunneling at high electric field. The LPCVD-SiN_x gate dielectric exhibits intrinsic high breakdown electric field. Both electric-field-accelerated and temperature-accelerated time-dependent dielectric breakdown (TDDB) tests were also conducted to predicate the lifetime of LPCVD-SiN_x gate dielectric. Although the LPCVD-SiN_x gate dielectric delivers superior performance, as a passivation layer, it still needs further optimization. At the second part of the thesis work, we demonstrate an integrated process that illustrates the compatibility of an effective AlN/SiN_x passivation with high-performance (i.e. low leakage and high breakdown) LPCVD-SiN_x gate dielectric for GaN-based MIS-HEMT. It is shown that the AlN/SiN_x passivation structure maintains its superior capability of suppressing the current collapse after…

Subjects/Keywords: Gallium nitride ; Modulation-doped field-effect transistors ; Field-effect transistors ; Dielectric devices ; Thin film devices

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APA (6^th Edition):

Hua, M. E. (2017). Gate dielectric technology for high-performance GaN power MIS-HEMT and MIS-FET. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-105606 ; https://doi.org/10.14711/thesis-991012552668503412 ; http://repository.ust.hk/ir/bitstream/1783.1-105606/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Hua, Mengyuan ECE. “Gate dielectric technology for high-performance GaN power MIS-HEMT and MIS-FET.” 2017. Thesis, Hong Kong University of Science and Technology. Accessed March 08, 2021. http://repository.ust.hk/ir/Record/1783.1-105606 ; https://doi.org/10.14711/thesis-991012552668503412 ; http://repository.ust.hk/ir/bitstream/1783.1-105606/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Hua, Mengyuan ECE. “Gate dielectric technology for high-performance GaN power MIS-HEMT and MIS-FET.” 2017. Web. 08 Mar 2021.

Vancouver:

Hua ME. Gate dielectric technology for high-performance GaN power MIS-HEMT and MIS-FET. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2017. [cited 2021 Mar 08]. Available from: http://repository.ust.hk/ir/Record/1783.1-105606 ; https://doi.org/10.14711/thesis-991012552668503412 ; http://repository.ust.hk/ir/bitstream/1783.1-105606/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hua ME. Gate dielectric technology for high-performance GaN power MIS-HEMT and MIS-FET. [Thesis]. Hong Kong University of Science and Technology; 2017. Available from: http://repository.ust.hk/ir/Record/1783.1-105606 ; https://doi.org/10.14711/thesis-991012552668503412 ; http://repository.ust.hk/ir/bitstream/1783.1-105606/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

20. Mellati, Meftah. Negative bias temperature instability modeling for pure-SiO2.

Degree: 2012, Université M'Hamed Bougara Boumerdès

URL: http://dlibrary.univ-boumerdes.dz:8080123456789/1613

►

103 p. : ill. ; 30 cm

Negative Bias Temperature Instability (NBTI) is a serious degradation mechanism in nanoscale devices and circuits. It impacts mainly… (more)

Subjects/Keywords: Thermique; Transistors MOSFET; Metal oxide semiconductor field-effect transistors; Heat engineering

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APA (6^th Edition):

Mellati, M. (2012). Negative bias temperature instability modeling for pure-SiO2. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080123456789/1613

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Mellati, Meftah. “Negative bias temperature instability modeling for pure-SiO2.” 2012. Thesis, Université M'Hamed Bougara Boumerdès. Accessed March 08, 2021. http://dlibrary.univ-boumerdes.dz:8080123456789/1613.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Mellati, Meftah. “Negative bias temperature instability modeling for pure-SiO2.” 2012. Web. 08 Mar 2021.

Vancouver:

Mellati M. Negative bias temperature instability modeling for pure-SiO2. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 2012. [cited 2021 Mar 08]. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1613.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mellati M. Negative bias temperature instability modeling for pure-SiO2. [Thesis]. Université M'Hamed Bougara Boumerdès; 2012. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1613

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Mellati, Meftah. Negative bias temperature instability modeling for pure-SiO2.

Degree: 2012, Université M'Hamed Bougara Boumerdès

URL: http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1094

►

103 p. ; ill. ; 30 cm

Negative Bias Temperature Instability (NBTI) is a serious degradation mechanism in nanoscale devices and circuits. It impacts mainly… (more)

Subjects/Keywords: Thermique; Transistors MOSFET; Metal oxide semiconductor field-effect transistors; Heat engineering

Record Details Similar Records Cite « Share

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APA (6^th Edition):

Mellati, M. (2012). Negative bias temperature instability modeling for pure-SiO2. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1094

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Mellati, Meftah. “Negative bias temperature instability modeling for pure-SiO2.” 2012. Thesis, Université M'Hamed Bougara Boumerdès. Accessed March 08, 2021. http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1094.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Mellati, Meftah. “Negative bias temperature instability modeling for pure-SiO2.” 2012. Web. 08 Mar 2021.

Vancouver:

Mellati M. Negative bias temperature instability modeling for pure-SiO2. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 2012. [cited 2021 Mar 08]. Available from: http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1094.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mellati M. Negative bias temperature instability modeling for pure-SiO2. [Thesis]. Université M'Hamed Bougara Boumerdès; 2012. Available from: http://dlibrary.univ-boumerdes.dz:8080/jspui/handle/123456789/1094

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Hong Kong University of Science and Technology

22. Jiang, Huaxing ECE. Development of advanced gate stacks and passivation techniques for GaN power transistors.

Degree: 2017, Hong Kong University of Science and Technology

URL: http://repository.ust.hk/ir/Record/1783.1-95179 ; https://doi.org/10.14711/thesis-991012553169603412 ; http://repository.ust.hk/ir/bitstream/1783.1-95179/1/th_redirect.html

► GaN-based high electron mobility transistors (HEMTs) are emerging as one of the most promising candidates for high efficiency power switching applications owing to their capability… (more)

▼ GaN-based high electron mobility transistors (HEMTs) are emerging as one of the most promising candidates for high efficiency power switching applications owing to their capability to deliver low on-resistance, high switching frequency, and high breakdown voltage. However, some key technical challenges are still present in state-of-the-art GaN HEMTs, preventing them from being widely adopted to the level the industry is expecting. One of the challenges is the dynamic on-resistance issue, also known as current collapse. Another challenge is the long-term reliability concern, for which the most significant liability is the gate stack. Mitigating these two major challenges to advance the GaN HEMT technology for wide utilization motivates the research work in this thesis. This thesis is dedicated to the development of advanced gate stacks and passivation techniques to achieve stable device operation with minimal threshold voltage (V_th) shift and low current collapse in GaN HEMTs and metal-insulator-semiconductor HEMTs (MISHEMTs). First, a surface engineering process combining a pre-gate surface treatment and a post-gate thermal annealing was developed for Schottky gate HEMTs. High breakdown voltage (V_BR) and low current collapse were achieved in the devices. Second, in situ SiN was investigated systematically as the gate dielectric and surface passivation for GaN MISHEMTs. Minimal V_th shift was realized under long gate stress and high temperature operation. Taking the advantages of in situ SiN, high power MISHEMTs with a 20-mm gate width were demonstrated using a passivation-first process and a bilayer SiN passivation scheme, realizing low dynamic on-resistance and high V_BR. Third, atomic layer deposited high-k ZrO₂ was developed as the gate dielectric for GaN MISHEMTs to enhance the gate control. A high on/off current ratio, a nearly ideal subthreshold slope, a high V_BR, and suppressed current collapse were achieved simultaneously in the device. Power MISHEMTs with a 20 mm gate width were also demonstrated using the ZrO₂ gate dielectric, exhibiting excellent switching characteristics. Finally, a novel enhancement-mode GaN MISHEMT was demonstrated using an ultrathin-barrier AlGaN/GaN heterostructure, selective area barrier regrowth, and a high-k ZrO₂ gate dielectric. A uniform and large positive V_th was achieved as a result of the high quality gate stack in the MISHEMTs.

Subjects/Keywords: Gallium nitride ; Power transistors ; Modulation-doped field-effect transistors ; Passive components

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APA (6^th Edition):

Jiang, H. E. (2017). Development of advanced gate stacks and passivation techniques for GaN power transistors. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-95179 ; https://doi.org/10.14711/thesis-991012553169603412 ; http://repository.ust.hk/ir/bitstream/1783.1-95179/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Jiang, Huaxing ECE. “Development of advanced gate stacks and passivation techniques for GaN power transistors.” 2017. Thesis, Hong Kong University of Science and Technology. Accessed March 08, 2021. http://repository.ust.hk/ir/Record/1783.1-95179 ; https://doi.org/10.14711/thesis-991012553169603412 ; http://repository.ust.hk/ir/bitstream/1783.1-95179/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Jiang, Huaxing ECE. “Development of advanced gate stacks and passivation techniques for GaN power transistors.” 2017. Web. 08 Mar 2021.

Vancouver:

Jiang HE. Development of advanced gate stacks and passivation techniques for GaN power transistors. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2017. [cited 2021 Mar 08]. Available from: http://repository.ust.hk/ir/Record/1783.1-95179 ; https://doi.org/10.14711/thesis-991012553169603412 ; http://repository.ust.hk/ir/bitstream/1783.1-95179/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jiang HE. Development of advanced gate stacks and passivation techniques for GaN power transistors. [Thesis]. Hong Kong University of Science and Technology; 2017. Available from: http://repository.ust.hk/ir/Record/1783.1-95179 ; https://doi.org/10.14711/thesis-991012553169603412 ; http://repository.ust.hk/ir/bitstream/1783.1-95179/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Rutgers University

23. Li, Yuzhu. Design, fabrication and process developments of 4H-silicon carbide TIVJFET.

Degree: PhD, Electrical and Computer Engineering, 2008, Rutgers University

URL: http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17256

►

This Ph.D thesis describes and reviews the state-of-the-start 4H-SiC power junction field-effect transistors (JFET). The purpose of thesis research includes design and fabrication of TIVJFET… (more)

Subjects/Keywords: Field effect transistors; Junction transistors

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APA (6^th Edition):

Li, Y. (2008). Design, fabrication and process developments of 4H-silicon carbide TIVJFET. (Doctoral Dissertation). Rutgers University. Retrieved from http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17256

Chicago Manual of Style (16^th Edition):

Li, Yuzhu. “Design, fabrication and process developments of 4H-silicon carbide TIVJFET.” 2008. Doctoral Dissertation, Rutgers University. Accessed March 08, 2021. http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17256.

MLA Handbook (7^th Edition):

Li, Yuzhu. “Design, fabrication and process developments of 4H-silicon carbide TIVJFET.” 2008. Web. 08 Mar 2021.

Vancouver:

Li Y. Design, fabrication and process developments of 4H-silicon carbide TIVJFET. [Internet] [Doctoral dissertation]. Rutgers University; 2008. [cited 2021 Mar 08]. Available from: http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17256.

Council of Science Editors:

Li Y. Design, fabrication and process developments of 4H-silicon carbide TIVJFET. [Doctoral Dissertation]. Rutgers University; 2008. Available from: http://hdl.rutgers.edu/1782.2/rucore10001600001.ETD.17256

Columbia University

24. Warren, Steven Benjamin. CMOS Integration of Single-Molecule Field-Effect Transistors.

Degree: 2016, Columbia University

URL: https://doi.org/10.7916/D8K937R9

► Point functionalized carbon nanotubes have recently demonstrated the ability to serve as single-molecule biosensors. Operating as single-molecule Field-Effect Transistors (smFET), the sensors have been used… (more)

Subjects/Keywords: Field-effect transistors; Metal oxide semiconductor field-effect transistors; Carbon nanotubes; Biosensors; Metal oxide semiconductors, Complementary; Electrical engineering

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APA (6^th Edition):

Warren, S. B. (2016). CMOS Integration of Single-Molecule Field-Effect Transistors. (Doctoral Dissertation). Columbia University. Retrieved from https://doi.org/10.7916/D8K937R9

Chicago Manual of Style (16^th Edition):

Warren, Steven Benjamin. “CMOS Integration of Single-Molecule Field-Effect Transistors.” 2016. Doctoral Dissertation, Columbia University. Accessed March 08, 2021. https://doi.org/10.7916/D8K937R9.

MLA Handbook (7^th Edition):

Warren, Steven Benjamin. “CMOS Integration of Single-Molecule Field-Effect Transistors.” 2016. Web. 08 Mar 2021.

Vancouver:

Warren SB. CMOS Integration of Single-Molecule Field-Effect Transistors. [Internet] [Doctoral dissertation]. Columbia University; 2016. [cited 2021 Mar 08]. Available from: https://doi.org/10.7916/D8K937R9.

Council of Science Editors:

Warren SB. CMOS Integration of Single-Molecule Field-Effect Transistors. [Doctoral Dissertation]. Columbia University; 2016. Available from: https://doi.org/10.7916/D8K937R9

Virginia Tech

25. Saluru, Sarat Kiran. Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications.

Degree: MS, Electrical Engineering, 2017, Virginia Tech

URL: http://hdl.handle.net/10919/78028

► The aggressive scaling of silicon (Si) based complementary metal-oxide-semiconductor (CMOS) transistor over the past 50 years has resulted in an exponential increase in device density,… (more)

▼ The aggressive scaling of silicon (Si) based complementary metal-oxide-semiconductor (CMOS) transistor over the past 50 years has resulted in an exponential increase in device density, which consequentially has increased computation power rapidly. This has pronounced the necessity to scale the device's supply voltage (VDD) in to order to maintain low-power device operation. However, the scaling of VDD can degrade drive current significantly due to the low carrier mobility of Si. To overcome the key challenges of dimensional and voltage scaling required for low-power electronic operation without degradation of device characteristics, the adoption of alternate channel materials with low bandgap with superior transport properties will play a crucial role to improve the computation ability of the standard integrated circuit (IC). The requirement of high-mobility channel materials allows the industry to harness the potential of III-V semiconductors and germanium. However, the adoption of such high mobility materials as bulk substrates remains cost-prohibitive even today. Hence, another key challenge lies in the heterogeneous integration of epitaxial high-mobility channel materials on the established cost-effective Si platform. Furthermore, dimensional scaling of the device has led to a change in architecture from the conventional planar MOSFET to be modified to a 3-D Tri-gate architecture which provides fully depleted characteristics by increasing the inversion layer area and hence, providing superior electrostatic control of the device channel to address short channel effects such as subthreshold slope (SS) and drain induced barrier lowering (DIBL). The Tri-gate configuration provides a steeper SS effectively reducing leakage current (IOFF), thereby decreasing dynamic power consumption and increasing device performance. Recently, Tantalum silicate (TaSiOx) a high-k dielectric has been shown to exhibit superior interfacial quality on multiple III-V materials. However, there is still ambiguity as to the potential of short-channel devices incorporating alternate channel (III-V) materials which is the basis of this research, to demonstrate the feasibility of future high-mobility n-channel InGaAs material integration on Si for high- speed, low-power, high performance CMOS logic applications. Advisors/Committee Members: Hudait, Mantu K. (committeechair), Asryan, Levon Volodya (committee member), Jia, Xiaoting (committee member).

Subjects/Keywords: InGaAs; III-V; Metal-Oxide-Semiconductor Field-Effect Transistors; Fin-Field-Effect Transistors; Heterogeneous Integration; Silicon

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APA (6^th Edition):

Saluru, S. K. (2017). Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/78028

Chicago Manual of Style (16^th Edition):

Saluru, Sarat Kiran. “Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications.” 2017. Masters Thesis, Virginia Tech. Accessed March 08, 2021. http://hdl.handle.net/10919/78028.

MLA Handbook (7^th Edition):

Saluru, Sarat Kiran. “Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications.” 2017. Web. 08 Mar 2021.

Vancouver:

Saluru SK. Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications. [Internet] [Masters thesis]. Virginia Tech; 2017. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10919/78028.

Council of Science Editors:

Saluru SK. Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications. [Masters Thesis]. Virginia Tech; 2017. Available from: http://hdl.handle.net/10919/78028

University of British Columbia

26. Lord, Joseph Louis Martin. FET upconverter design using load dependent mixing transconductance.

Degree: Master of Applied Science - MASc, Electrical and Computer Engineering, 1988, University of British Columbia

URL: http://hdl.handle.net/2429/28499

► The conversion gain of GaAs MESFET mixers is known to be dependent on the impedances seen by the applied signals and the resulting mixing products… (more)

Subjects/Keywords: Metal semiconductor field-effect transistors; Field-effect transistors

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APA (6^th Edition):

Lord, J. L. M. (1988). FET upconverter design using load dependent mixing transconductance. (Masters Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/28499

Chicago Manual of Style (16^th Edition):

Lord, Joseph Louis Martin. “FET upconverter design using load dependent mixing transconductance.” 1988. Masters Thesis, University of British Columbia. Accessed March 08, 2021. http://hdl.handle.net/2429/28499.

MLA Handbook (7^th Edition):

Lord, Joseph Louis Martin. “FET upconverter design using load dependent mixing transconductance.” 1988. Web. 08 Mar 2021.

Vancouver:

Lord JLM. FET upconverter design using load dependent mixing transconductance. [Internet] [Masters thesis]. University of British Columbia; 1988. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/2429/28499.

Council of Science Editors:

Lord JLM. FET upconverter design using load dependent mixing transconductance. [Masters Thesis]. University of British Columbia; 1988. Available from: http://hdl.handle.net/2429/28499

Simon Fraser University

27. Liang, Joseph. Parameter extraction of LDD short-channel and narrow-width MOSFETS under varying operating conditions.

Degree: 1993, Simon Fraser University

URL: http://summit.sfu.ca/item/5743

Subjects/Keywords: Metal oxide semiconductor field-effect transistors.; Field-effect transistors.

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Liang, J. (1993). Parameter extraction of LDD short-channel and narrow-width MOSFETS under varying operating conditions. (Thesis). Simon Fraser University. Retrieved from http://summit.sfu.ca/item/5743

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Liang, Joseph. “Parameter extraction of LDD short-channel and narrow-width MOSFETS under varying operating conditions.” 1993. Thesis, Simon Fraser University. Accessed March 08, 2021. http://summit.sfu.ca/item/5743.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Liang, Joseph. “Parameter extraction of LDD short-channel and narrow-width MOSFETS under varying operating conditions.” 1993. Web. 08 Mar 2021.

Vancouver:

Liang J. Parameter extraction of LDD short-channel and narrow-width MOSFETS under varying operating conditions. [Internet] [Thesis]. Simon Fraser University; 1993. [cited 2021 Mar 08]. Available from: http://summit.sfu.ca/item/5743.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liang J. Parameter extraction of LDD short-channel and narrow-width MOSFETS under varying operating conditions. [Thesis]. Simon Fraser University; 1993. Available from: http://summit.sfu.ca/item/5743

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Michigan State University

28. Taskas, Petros G. Lifetime estimation of power MOSFETs.

Degree: 2016, Michigan State University

URL: http://etd.lib.msu.edu/islandora/object/etd:4129

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Thesis M.S. Michigan State University. Electrical Engineering 2016

"In this document a theory is proposed that all power MOSFETs will go through three regions of… (more)

Subjects/Keywords: Metal oxide semiconductor field-effect transistors; Metal oxide semiconductor field-effect transistors – Mathematical models; Electrical engineering; Physics

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Taskas, P. G. (2016). Lifetime estimation of power MOSFETs. (Thesis). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:4129

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Taskas, Petros G. “Lifetime estimation of power MOSFETs.” 2016. Thesis, Michigan State University. Accessed March 08, 2021. http://etd.lib.msu.edu/islandora/object/etd:4129.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Taskas, Petros G. “Lifetime estimation of power MOSFETs.” 2016. Web. 08 Mar 2021.

Vancouver:

Taskas PG. Lifetime estimation of power MOSFETs. [Internet] [Thesis]. Michigan State University; 2016. [cited 2021 Mar 08]. Available from: http://etd.lib.msu.edu/islandora/object/etd:4129.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Taskas PG. Lifetime estimation of power MOSFETs. [Thesis]. Michigan State University; 2016. Available from: http://etd.lib.msu.edu/islandora/object/etd:4129

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

29. Djezzar, Boualem. Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS.

Degree: 2014, Université M'Hamed Bougara Boumerdès

URL: http://dlibrary.univ-boumerdes.dz:8080123456789/1437

►

196 p. : ill. ; 30 cm

La miniaturisation des composants électroniques a entraîné une réduction accélérée de l'épaisseur du diélectrique de la grille des… (more)

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196 p. : ill. ; 30 cm

La miniaturisation des composants électroniques a entraîné une réduction accélérée de l'épaisseur du diélectrique de la grille des transistors d'un nœud technologique à un autre. Ceci a induit une augmentation du champ électrique de la grille ainsi qu'une augmentation de la température de fonctionnement des circuits intégrés (CI's). En conséquence, plusieurs problèmes de fiabilité des CI's sont apparus, en particulier Negative/Positive Bias Temperature Instability (N/PBTI). En effet, le BTI influence le fonctionnement des CI's ainsi que leurs durées de vie en créant des pièges à l'interface (Si/SiO2) et dans l'oxyde de grille. De ce fait, la compréhension des mécanismes de formation des pièges, créés à l'interface substrat/isolant et dans la région d'oxyde près de l'interface, est importante et utile pour la modélisation de la dégradation NBTI et la prédiction de la durée de vie des composants. Ainsi donc, l'objectif de cette thèse est la caractérisation électrique de la dégradation NBTI en utilisant de nouvelles méthodes et de nouveaux concepts afin de mieux appréhender et analyser les pièges impliqués dans la dégradation NBTI, et par voie de conséquence développer des modèles fiables pour prédire la durée de vie des dispositifs. A cet effet, nous proposons une nouvelle méthode, nommée On The Fly Oxide Trap (OTFOT), pour extraire la dégradation NBTI. En utilisant le pompage de charge à haute et basse fréquences. La méthode OTFOT permet d'extraire et de séparer les densités des pièges d'interface (ÀNit) et d'oxyde prés de l'interface " border trap " (ÀNbt) et aussi leurs contributions à la dérive de la tension de seuil ( Vth) sans recourir à d'autres méthodes complémentaires. De plus, nous avons exploré la génération et l'évolution de la distribution de ÀNit en fonction de la longueur du canal. Nous avons trouvé que la densité ÀNit, induite par le stress NBTI, n'est pas uniforme le long du canal. Les résultats expérimentaux révèlent une propagation de la dégradation. Cette dernière commence à partir des bords source/drain et puis pénètre au centre du canal. Elle est accélérée par la température et le champ électrique jusqu'à la saturation. Cependant, l'accélération par le champ électrique et plus important que celle de la température. Aussi, les transistors à canaux courts se dégradent plus rapidement que ceux à canaux longs. Finalement, Nous avons aussi scanné le profile de Nbt en fonction de la profondeur (Z) dans l'oxyde de grille prés de l'interface des transistors PMOS. Selon nos données expérimentales, l'exposant (n) de la loi en puissance (tn) qui gère l'évolution temporelle de Nbt, ainsi que l'énergie apparente d'activation (Ea,eff) diminuent avec la température (T) et la tension (VGstr) de stress. En outre, le moment dipolaire effectif (aeff) et l'énergie d'activation (Ea) (indépendante du champ électrique) ont montré une dépendance linéaire avec Z. Ceci peut expliquer la variation de n et Ea,eff avec T et VGstr. En effet, leur diminution peut être causée par la contribution…

Subjects/Keywords: MOS (électronique); Transistors MOSFET; Metal oxide semiconductors; Metal oxide semiconductor field-effect transistors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Djezzar, B. (2014). Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080123456789/1437

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Djezzar, Boualem. “Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS.” 2014. Thesis, Université M'Hamed Bougara Boumerdès. Accessed March 08, 2021. http://dlibrary.univ-boumerdes.dz:8080123456789/1437.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Djezzar, Boualem. “Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS.” 2014. Web. 08 Mar 2021.

Vancouver:

Djezzar B. Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 2014. [cited 2021 Mar 08]. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1437.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Djezzar B. Etude des effets NBTI et PBTI sur la fiabilite des dispositifs MOS. [Thesis]. Université M'Hamed Bougara Boumerdès; 2014. Available from: http://dlibrary.univ-boumerdes.dz:8080123456789/1437

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Johannesburg

30. Ferreira, Jan Abraham. Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette.

Degree: 2014, University of Johannesburg

URL: http://hdl.handle.net/10210/9983

►

M.Ing. (Electrical and Electronic Engineering)

The possibilities and technology of converters with an alternating voltage link are investigated for high specific power conversion at high… (more)

Subjects/Keywords: Electric transformers; Electric current converters; Electric currents, Alternating; Bipolar transistors; Field-effect transistors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Ferreira, J. A. (2014). Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette. (Thesis). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/9983

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Ferreira, Jan Abraham. “Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette.” 2014. Thesis, University of Johannesburg. Accessed March 08, 2021. http://hdl.handle.net/10210/9983.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Ferreira, Jan Abraham. “Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette.” 2014. Web. 08 Mar 2021.

Vancouver:

Ferreira JA. Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette. [Internet] [Thesis]. University of Johannesburg; 2014. [cited 2021 Mar 08]. Available from: http://hdl.handle.net/10210/9983.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ferreira JA. Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette. [Thesis]. University of Johannesburg; 2014. Available from: http://hdl.handle.net/10210/9983

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Open Access Theses and Dissertations