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You searched for subject:(Field effect transistor). Showing records 1 – 30 of 276 total matches.

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University of Waterloo

1. Ellard, Jackson. Thiophene-S,S-dioxidized indophenine for use in organic field effect transistors.

Degree: 2016, University of Waterloo

 To address the need for better n-type organic semiconductors, thiophene-S,S-dioxidized indophenine (IDTO) was developed. IDTO is a planar quinoidal molecule with deep energy levels which… (more)

Subjects/Keywords: organic field effect transistor

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APA (6th Edition):

Ellard, J. (2016). Thiophene-S,S-dioxidized indophenine for use in organic field effect transistors. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/11137

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ellard, Jackson. “Thiophene-S,S-dioxidized indophenine for use in organic field effect transistors.” 2016. Thesis, University of Waterloo. Accessed October 24, 2020. http://hdl.handle.net/10012/11137.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ellard, Jackson. “Thiophene-S,S-dioxidized indophenine for use in organic field effect transistors.” 2016. Web. 24 Oct 2020.

Vancouver:

Ellard J. Thiophene-S,S-dioxidized indophenine for use in organic field effect transistors. [Internet] [Thesis]. University of Waterloo; 2016. [cited 2020 Oct 24]. Available from: http://hdl.handle.net/10012/11137.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ellard J. Thiophene-S,S-dioxidized indophenine for use in organic field effect transistors. [Thesis]. University of Waterloo; 2016. Available from: http://hdl.handle.net/10012/11137

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

2. Buckley, Carolyn A. Design and processing of charge transport polymer semiconductors and their applications in n-channel organic field effect transistors.

Degree: PhD, Chemistry and Biochemistry, 2019, Georgia Tech

 The molecular structures of polymeric semiconductors were strategically designed to impart electronic characteristics conducive to increasing electron-transport performance in organic field effect transistor devices. The… (more)

Subjects/Keywords: Polymer; Semiconductor; Field-effect transistor

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APA (6th Edition):

Buckley, C. A. (2019). Design and processing of charge transport polymer semiconductors and their applications in n-channel organic field effect transistors. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/63515

Chicago Manual of Style (16th Edition):

Buckley, Carolyn A. “Design and processing of charge transport polymer semiconductors and their applications in n-channel organic field effect transistors.” 2019. Doctoral Dissertation, Georgia Tech. Accessed October 24, 2020. http://hdl.handle.net/1853/63515.

MLA Handbook (7th Edition):

Buckley, Carolyn A. “Design and processing of charge transport polymer semiconductors and their applications in n-channel organic field effect transistors.” 2019. Web. 24 Oct 2020.

Vancouver:

Buckley CA. Design and processing of charge transport polymer semiconductors and their applications in n-channel organic field effect transistors. [Internet] [Doctoral dissertation]. Georgia Tech; 2019. [cited 2020 Oct 24]. Available from: http://hdl.handle.net/1853/63515.

Council of Science Editors:

Buckley CA. Design and processing of charge transport polymer semiconductors and their applications in n-channel organic field effect transistors. [Doctoral Dissertation]. Georgia Tech; 2019. Available from: http://hdl.handle.net/1853/63515


University of Texas – Austin

3. Ponath, Patrick. Epitaxial functional oxide integration on germanium.

Degree: PhD, Physics, 2017, University of Texas – Austin

 Germanium, with its higher hole and electron mobility is a potential candidate to replace silicon as a channel material in a field effect transistor in… (more)

Subjects/Keywords: Ferroelectric field-effect transistor; Germanium

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APA (6th Edition):

Ponath, P. (2017). Epitaxial functional oxide integration on germanium. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/63060

Chicago Manual of Style (16th Edition):

Ponath, Patrick. “Epitaxial functional oxide integration on germanium.” 2017. Doctoral Dissertation, University of Texas – Austin. Accessed October 24, 2020. http://hdl.handle.net/2152/63060.

MLA Handbook (7th Edition):

Ponath, Patrick. “Epitaxial functional oxide integration on germanium.” 2017. Web. 24 Oct 2020.

Vancouver:

Ponath P. Epitaxial functional oxide integration on germanium. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2017. [cited 2020 Oct 24]. Available from: http://hdl.handle.net/2152/63060.

Council of Science Editors:

Ponath P. Epitaxial functional oxide integration on germanium. [Doctoral Dissertation]. University of Texas – Austin; 2017. Available from: http://hdl.handle.net/2152/63060


University of California – Riverside

4. KUO, CHUN-TE. Reversible Synthesis Graphene Oxide Through Controllable Chemical Potential Via Back-Gate Bias: Mechanism and Application.

Degree: Chemical and Environmental Engineering, 2015, University of California – Riverside

 Graphene is a single layer of carbon atoms densely packed in a two-dimensional (2D) sp2 -bonded carbon hexagonal lattice and is considered as an essential… (more)

Subjects/Keywords: Engineering; field effect transistor; graphene; graphene oxide

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APA (6th Edition):

KUO, C. (2015). Reversible Synthesis Graphene Oxide Through Controllable Chemical Potential Via Back-Gate Bias: Mechanism and Application. (Thesis). University of California – Riverside. Retrieved from http://www.escholarship.org/uc/item/6gv3z7b4

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

KUO, CHUN-TE. “Reversible Synthesis Graphene Oxide Through Controllable Chemical Potential Via Back-Gate Bias: Mechanism and Application.” 2015. Thesis, University of California – Riverside. Accessed October 24, 2020. http://www.escholarship.org/uc/item/6gv3z7b4.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

KUO, CHUN-TE. “Reversible Synthesis Graphene Oxide Through Controllable Chemical Potential Via Back-Gate Bias: Mechanism and Application.” 2015. Web. 24 Oct 2020.

Vancouver:

KUO C. Reversible Synthesis Graphene Oxide Through Controllable Chemical Potential Via Back-Gate Bias: Mechanism and Application. [Internet] [Thesis]. University of California – Riverside; 2015. [cited 2020 Oct 24]. Available from: http://www.escholarship.org/uc/item/6gv3z7b4.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

KUO C. Reversible Synthesis Graphene Oxide Through Controllable Chemical Potential Via Back-Gate Bias: Mechanism and Application. [Thesis]. University of California – Riverside; 2015. Available from: http://www.escholarship.org/uc/item/6gv3z7b4

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Tulane University

5. Liu, Xue. Electronic transport studies of low dimensional van der Waals materials.

Degree: 2017, Tulane University

Ever since the successful isolation of graphene, plenty of researches have been pursued to study fundamental physics in low-dimensional van der Waals materials, referred to… (more)

Subjects/Keywords: Low dimension; field-effect transistor; quantum confinement

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APA (6th Edition):

Liu, X. (2017). Electronic transport studies of low dimensional van der Waals materials. (Thesis). Tulane University. Retrieved from https://digitallibrary.tulane.edu/islandora/object/tulane:75688

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Xue. “Electronic transport studies of low dimensional van der Waals materials.” 2017. Thesis, Tulane University. Accessed October 24, 2020. https://digitallibrary.tulane.edu/islandora/object/tulane:75688.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Xue. “Electronic transport studies of low dimensional van der Waals materials.” 2017. Web. 24 Oct 2020.

Vancouver:

Liu X. Electronic transport studies of low dimensional van der Waals materials. [Internet] [Thesis]. Tulane University; 2017. [cited 2020 Oct 24]. Available from: https://digitallibrary.tulane.edu/islandora/object/tulane:75688.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu X. Electronic transport studies of low dimensional van der Waals materials. [Thesis]. Tulane University; 2017. Available from: https://digitallibrary.tulane.edu/islandora/object/tulane:75688

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University College Cork

6. Mirabelli, Gioele. Two-dimensional semiconductors for future electronics.

Degree: 2020, University College Cork

 The aggressive scaling imposed by CMOS technology has put very stringent requirements on the dimensions of Silicon transistors. According to the semiconductor roadmaps (ITRS, IRDS,… (more)

Subjects/Keywords: TCAD; Semiconductor; Field-effect-transistor; 2D-materials

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APA (6th Edition):

Mirabelli, G. (2020). Two-dimensional semiconductors for future electronics. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/10151

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mirabelli, Gioele. “Two-dimensional semiconductors for future electronics.” 2020. Thesis, University College Cork. Accessed October 24, 2020. http://hdl.handle.net/10468/10151.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mirabelli, Gioele. “Two-dimensional semiconductors for future electronics.” 2020. Web. 24 Oct 2020.

Vancouver:

Mirabelli G. Two-dimensional semiconductors for future electronics. [Internet] [Thesis]. University College Cork; 2020. [cited 2020 Oct 24]. Available from: http://hdl.handle.net/10468/10151.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mirabelli G. Two-dimensional semiconductors for future electronics. [Thesis]. University College Cork; 2020. Available from: http://hdl.handle.net/10468/10151

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

7. Choi, Jonghyun. Three-dimensional graphene/graphite structure for ultra-sensitive biosensor.

Degree: MS, 0133, 2014, University of Illinois – Urbana-Champaign

 Graphene has been attracting significant research interests for post-silicon electronics due to its unique properties such as extraordinarily high carrier mobility, mechanical robustness/flexibility and biocompatibility.… (more)

Subjects/Keywords: Graphene; Bio-sensing; Field Effect Transistor (FET)

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APA (6th Edition):

Choi, J. (2014). Three-dimensional graphene/graphite structure for ultra-sensitive biosensor. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/50491

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Choi, Jonghyun. “Three-dimensional graphene/graphite structure for ultra-sensitive biosensor.” 2014. Thesis, University of Illinois – Urbana-Champaign. Accessed October 24, 2020. http://hdl.handle.net/2142/50491.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Choi, Jonghyun. “Three-dimensional graphene/graphite structure for ultra-sensitive biosensor.” 2014. Web. 24 Oct 2020.

Vancouver:

Choi J. Three-dimensional graphene/graphite structure for ultra-sensitive biosensor. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2014. [cited 2020 Oct 24]. Available from: http://hdl.handle.net/2142/50491.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Choi J. Three-dimensional graphene/graphite structure for ultra-sensitive biosensor. [Thesis]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/50491

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Southern California

8. Song, Yan. Surface functionalization of nanomaterials and development of field effect transistor nanobiosensors.

Degree: PhD, Chemistry, 2015, University of Southern California

 Researchers have been developing Point‐Of‐Care Testing (POCT) devices over the past decade to potentially substitute the current lab‐based disease diagnostic technologies with improved portability and… (more)

Subjects/Keywords: surface functionalization; nanomaterials; nanobiosensors; field effect transistor

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APA (6th Edition):

Song, Y. (2015). Surface functionalization of nanomaterials and development of field effect transistor nanobiosensors. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/573971/rec/6236

Chicago Manual of Style (16th Edition):

Song, Yan. “Surface functionalization of nanomaterials and development of field effect transistor nanobiosensors.” 2015. Doctoral Dissertation, University of Southern California. Accessed October 24, 2020. http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/573971/rec/6236.

MLA Handbook (7th Edition):

Song, Yan. “Surface functionalization of nanomaterials and development of field effect transistor nanobiosensors.” 2015. Web. 24 Oct 2020.

Vancouver:

Song Y. Surface functionalization of nanomaterials and development of field effect transistor nanobiosensors. [Internet] [Doctoral dissertation]. University of Southern California; 2015. [cited 2020 Oct 24]. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/573971/rec/6236.

Council of Science Editors:

Song Y. Surface functionalization of nanomaterials and development of field effect transistor nanobiosensors. [Doctoral Dissertation]. University of Southern California; 2015. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/573971/rec/6236


Arizona State University

9. Pang, Pei. Carbon Nanotube Based Nanofluidic Devices.

Degree: PhD, Physics, 2011, Arizona State University

 Nanofluidic devices in which one single-walled carbon nanotube (SWCNT) spans a barrier between two fluid reservoirs were constructed, enabling direct electrical measurement of the transport… (more)

Subjects/Keywords: Physics; Biophysics; Carbon Nanotube; CNT field effect transistor; Ionic field effect transistor; Nanofluidics; Nanopore/Nanochannel

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APA (6th Edition):

Pang, P. (2011). Carbon Nanotube Based Nanofluidic Devices. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/14268

Chicago Manual of Style (16th Edition):

Pang, Pei. “Carbon Nanotube Based Nanofluidic Devices.” 2011. Doctoral Dissertation, Arizona State University. Accessed October 24, 2020. http://repository.asu.edu/items/14268.

MLA Handbook (7th Edition):

Pang, Pei. “Carbon Nanotube Based Nanofluidic Devices.” 2011. Web. 24 Oct 2020.

Vancouver:

Pang P. Carbon Nanotube Based Nanofluidic Devices. [Internet] [Doctoral dissertation]. Arizona State University; 2011. [cited 2020 Oct 24]. Available from: http://repository.asu.edu/items/14268.

Council of Science Editors:

Pang P. Carbon Nanotube Based Nanofluidic Devices. [Doctoral Dissertation]. Arizona State University; 2011. Available from: http://repository.asu.edu/items/14268


University of Illinois – Urbana-Champaign

10. Chabak, Kelson D. Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels.

Degree: PhD, Electrical & Computer Engr, 2016, University of Illinois – Urbana-Champaign

 This dissertation research effort explores new transistor topologies using three-dimensional nanowire (NW)-array channels formed by both bottom-up and top-down synthesis. The bottom-up NW research centers… (more)

Subjects/Keywords: nanowire transistor; High-electron-mobility transistor (HEMT); Fin field effect transistor (finFET); vapor-liquid-solid; gallium oxide; Metal–oxide–semiconductor field-effect transistor (MOSFET); wrap-gate

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APA (6th Edition):

Chabak, K. D. (2016). Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/95466

Chicago Manual of Style (16th Edition):

Chabak, Kelson D. “Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels.” 2016. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed October 24, 2020. http://hdl.handle.net/2142/95466.

MLA Handbook (7th Edition):

Chabak, Kelson D. “Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels.” 2016. Web. 24 Oct 2020.

Vancouver:

Chabak KD. Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2016. [cited 2020 Oct 24]. Available from: http://hdl.handle.net/2142/95466.

Council of Science Editors:

Chabak KD. Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2016. Available from: http://hdl.handle.net/2142/95466


UCLA

11. Pan, Andrew. Physics and Modeling of Tunneling in Low Power Transistors.

Degree: Electrical Engineering, 2015, UCLA

 As CMOS electronics grow ever more ubiquitous and essential to modern life, managing and reducing power dissipation becomes essential. At the device level, this requires… (more)

Subjects/Keywords: Electrical engineering; analytical modeling; field-effect transistor; interband tunneling; non-equilibrium green's functions; quantum transport; tunneling field-effect transistor (TFET)

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APA (6th Edition):

Pan, A. (2015). Physics and Modeling of Tunneling in Low Power Transistors. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/28p6j4vf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pan, Andrew. “Physics and Modeling of Tunneling in Low Power Transistors.” 2015. Thesis, UCLA. Accessed October 24, 2020. http://www.escholarship.org/uc/item/28p6j4vf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pan, Andrew. “Physics and Modeling of Tunneling in Low Power Transistors.” 2015. Web. 24 Oct 2020.

Vancouver:

Pan A. Physics and Modeling of Tunneling in Low Power Transistors. [Internet] [Thesis]. UCLA; 2015. [cited 2020 Oct 24]. Available from: http://www.escholarship.org/uc/item/28p6j4vf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pan A. Physics and Modeling of Tunneling in Low Power Transistors. [Thesis]. UCLA; 2015. Available from: http://www.escholarship.org/uc/item/28p6j4vf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Texas Tech University

12. Lawson, Kevin J. Pulsed evaluation of silicon carbide majority carrier devices.

Degree: Electrical Engineering, 2011, Texas Tech University

 In the power electronics industry power converters are reaching their physical limits for efficiency, power density, and output power. This is due to the fact… (more)

Subjects/Keywords: Metal–oxide–semiconductor field-effect transistor (MOSFET); Junction gate field-effect transistor (JFET); Silicon carbide; Pulsed power

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APA (6th Edition):

Lawson, K. J. (2011). Pulsed evaluation of silicon carbide majority carrier devices. (Thesis). Texas Tech University. Retrieved from http://hdl.handle.net/2346/ETD-TTU-2011-08-1720

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lawson, Kevin J. “Pulsed evaluation of silicon carbide majority carrier devices.” 2011. Thesis, Texas Tech University. Accessed October 24, 2020. http://hdl.handle.net/2346/ETD-TTU-2011-08-1720.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lawson, Kevin J. “Pulsed evaluation of silicon carbide majority carrier devices.” 2011. Web. 24 Oct 2020.

Vancouver:

Lawson KJ. Pulsed evaluation of silicon carbide majority carrier devices. [Internet] [Thesis]. Texas Tech University; 2011. [cited 2020 Oct 24]. Available from: http://hdl.handle.net/2346/ETD-TTU-2011-08-1720.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lawson KJ. Pulsed evaluation of silicon carbide majority carrier devices. [Thesis]. Texas Tech University; 2011. Available from: http://hdl.handle.net/2346/ETD-TTU-2011-08-1720

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

13. Joiner, Corey Alexander. Impact of materials disorder on graphene heterostructure devices.

Degree: PhD, Materials Science and Engineering, 2016, Georgia Tech

 This work is focused on characterizing the impact of material based disorder on the properties of graphene based vertical tunneling heterostructures. The motivation and challenges… (more)

Subjects/Keywords: Tunneling field effect transistor; Graphene; Molybdenum disulfide; Hexagonal boron nitride; Field effect transistor; TFET; FET; CMOS

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APA (6th Edition):

Joiner, C. A. (2016). Impact of materials disorder on graphene heterostructure devices. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/56243

Chicago Manual of Style (16th Edition):

Joiner, Corey Alexander. “Impact of materials disorder on graphene heterostructure devices.” 2016. Doctoral Dissertation, Georgia Tech. Accessed October 24, 2020. http://hdl.handle.net/1853/56243.

MLA Handbook (7th Edition):

Joiner, Corey Alexander. “Impact of materials disorder on graphene heterostructure devices.” 2016. Web. 24 Oct 2020.

Vancouver:

Joiner CA. Impact of materials disorder on graphene heterostructure devices. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2020 Oct 24]. Available from: http://hdl.handle.net/1853/56243.

Council of Science Editors:

Joiner CA. Impact of materials disorder on graphene heterostructure devices. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/56243


University of Illinois – Urbana-Champaign

14. Vilasur Swaminathan, Vikhram. Electrostatic control of microfluidic systems for enhancement of nanoparticle separations and FET nanobiosensors.

Degree: PhD, Mechanical Engineering, 2015, University of Illinois – Urbana-Champaign

 An abundance of ions in saline media or physiological buffers causes extensive shielding of charged surfaces and potentials. As a result, electrostatic forces cannot penetrate… (more)

Subjects/Keywords: microfluidics; nanofluidics; nanotechnology; biosensor; nanobiosensor; field-effect; colloid; separation; dielectrophoresis; Field Effect Transistor (FET)

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APA (6th Edition):

Vilasur Swaminathan, V. (2015). Electrostatic control of microfluidic systems for enhancement of nanoparticle separations and FET nanobiosensors. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/88933

Chicago Manual of Style (16th Edition):

Vilasur Swaminathan, Vikhram. “Electrostatic control of microfluidic systems for enhancement of nanoparticle separations and FET nanobiosensors.” 2015. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed October 24, 2020. http://hdl.handle.net/2142/88933.

MLA Handbook (7th Edition):

Vilasur Swaminathan, Vikhram. “Electrostatic control of microfluidic systems for enhancement of nanoparticle separations and FET nanobiosensors.” 2015. Web. 24 Oct 2020.

Vancouver:

Vilasur Swaminathan V. Electrostatic control of microfluidic systems for enhancement of nanoparticle separations and FET nanobiosensors. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2015. [cited 2020 Oct 24]. Available from: http://hdl.handle.net/2142/88933.

Council of Science Editors:

Vilasur Swaminathan V. Electrostatic control of microfluidic systems for enhancement of nanoparticle separations and FET nanobiosensors. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/88933


NSYSU

15. Hsu, Shi-Ya. Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen.

Degree: Master, Physics, 2012, NSYSU

 Abstract ããBiosensor chip has a lot of advantages, such as label-free, ultra-sensitive, highly selective, fast and real-time detection. Fabricating biosensor chip has great benefits for… (more)

Subjects/Keywords: silicon nanorod; biotin; field effect transistor; streptavidin; pancreatic cancer; Biosensor; high electron mobility transistor

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APA (6th Edition):

Hsu, S. (2012). Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-231225

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsu, Shi-Ya. “Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen.” 2012. Thesis, NSYSU. Accessed October 24, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-231225.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsu, Shi-Ya. “Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen.” 2012. Web. 24 Oct 2020.

Vancouver:

Hsu S. Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen. [Internet] [Thesis]. NSYSU; 2012. [cited 2020 Oct 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-231225.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsu S. Fabrication of nitride-based high electron mobility transistor biosensor to detect pancreatic cancer antigen. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731112-231225

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Iowa State University

16. Effler, Richard. An investigation of an ionic liquid analog to the conventional metal-oxide-semiconductor field-effect transistor.

Degree: 2019, Iowa State University

 An ionic circuit analogous to a traditional metal-oxide semiconductor was investigated, using 1-ethyl-3-methylimidazolium trifluoromethanesulfonate as the ionic liquid in the gating element. The circuit was… (more)

Subjects/Keywords: field-effect transistor; ionic liquid; transistor; Materials Science and Engineering; Mechanical Engineering; Mechanics of Materials

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APA (6th Edition):

Effler, R. (2019). An investigation of an ionic liquid analog to the conventional metal-oxide-semiconductor field-effect transistor. (Thesis). Iowa State University. Retrieved from https://lib.dr.iastate.edu/etd/17444

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Effler, Richard. “An investigation of an ionic liquid analog to the conventional metal-oxide-semiconductor field-effect transistor.” 2019. Thesis, Iowa State University. Accessed October 24, 2020. https://lib.dr.iastate.edu/etd/17444.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Effler, Richard. “An investigation of an ionic liquid analog to the conventional metal-oxide-semiconductor field-effect transistor.” 2019. Web. 24 Oct 2020.

Vancouver:

Effler R. An investigation of an ionic liquid analog to the conventional metal-oxide-semiconductor field-effect transistor. [Internet] [Thesis]. Iowa State University; 2019. [cited 2020 Oct 24]. Available from: https://lib.dr.iastate.edu/etd/17444.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Effler R. An investigation of an ionic liquid analog to the conventional metal-oxide-semiconductor field-effect transistor. [Thesis]. Iowa State University; 2019. Available from: https://lib.dr.iastate.edu/etd/17444

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

17. Lin, Zheng-Yi. Impacts of Active Layer Thickness on Electrical Characteristics of Poly-Si Tunnel Transistors.

Degree: Master, Electrical Engineering, 2017, NSYSU

 In recent years, low power devices such as tunneling field-effect transistor (TFET) have attracted much attention, which have steep subthreshold swing and low leakage current,… (more)

Subjects/Keywords: temperature effect; series resistance effect; solid phase crystallization; active layer; tunneling field-effect transistor (TFET)

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APA (6th Edition):

Lin, Z. (2017). Impacts of Active Layer Thickness on Electrical Characteristics of Poly-Si Tunnel Transistors. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-235533

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Zheng-Yi. “Impacts of Active Layer Thickness on Electrical Characteristics of Poly-Si Tunnel Transistors.” 2017. Thesis, NSYSU. Accessed October 24, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-235533.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Zheng-Yi. “Impacts of Active Layer Thickness on Electrical Characteristics of Poly-Si Tunnel Transistors.” 2017. Web. 24 Oct 2020.

Vancouver:

Lin Z. Impacts of Active Layer Thickness on Electrical Characteristics of Poly-Si Tunnel Transistors. [Internet] [Thesis]. NSYSU; 2017. [cited 2020 Oct 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-235533.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin Z. Impacts of Active Layer Thickness on Electrical Characteristics of Poly-Si Tunnel Transistors. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0714117-235533

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

18. Yang, Chia-Ching. Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam.

Degree: Master, Physics, 2008, NSYSU

 We have grown the high quality AlGaN/GaN heterostructure by plasma-assisted molecular beam epitaxy. We obtained the mobility of two-dimensional electron gas of the AlGaN/GaN is… (more)

Subjects/Keywords: focus ion beam; nanowire; metal oxide semiconductor field effect transistor

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APA (6th Edition):

Yang, C. (2008). Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Chia-Ching. “Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam.” 2008. Thesis, NSYSU. Accessed October 24, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Chia-Ching. “Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam.” 2008. Web. 24 Oct 2020.

Vancouver:

Yang C. Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam. [Internet] [Thesis]. NSYSU; 2008. [cited 2020 Oct 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang C. Fabrication of AlxGa1-xN/GaN nanowires for metal oxide semiconductor field effect transistor by focus ion beam. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716108-181305

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Anna University

19. Jamuna V. Artificial neural network Controlled energy saver for Induction motor drive;.

Degree: Artificial neural network Controlled energy saver for Induction motor drive, 2014, Anna University

Voltage controllers are applied as motor soft starters and sometimes newlineas energy savers reducing the flux level in induction motors in accordance newlinewith the load… (more)

Subjects/Keywords: Metal oxide semiconductor field effect transistor; Pulse width modulation

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APA (6th Edition):

V, J. (2014). Artificial neural network Controlled energy saver for Induction motor drive;. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/28431

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

V, Jamuna. “Artificial neural network Controlled energy saver for Induction motor drive;.” 2014. Thesis, Anna University. Accessed October 24, 2020. http://shodhganga.inflibnet.ac.in/handle/10603/28431.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

V, Jamuna. “Artificial neural network Controlled energy saver for Induction motor drive;.” 2014. Web. 24 Oct 2020.

Vancouver:

V J. Artificial neural network Controlled energy saver for Induction motor drive;. [Internet] [Thesis]. Anna University; 2014. [cited 2020 Oct 24]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/28431.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

V J. Artificial neural network Controlled energy saver for Induction motor drive;. [Thesis]. Anna University; 2014. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/28431

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


UCLA

20. Ma, Siguang. Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation.

Degree: Electrical Engineering, 2014, UCLA

 In this thesis we mainly focus on silicon germanium based gate normal tunnel field effect transistor. We carried out TCAD modeling with special attention paid… (more)

Subjects/Keywords: Engineering; Electrical engineering; Field Effect Transistor; Germanium; Low Power; Silicon; Tunneling

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APA (6th Edition):

Ma, S. (2014). Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/1hr0n43f

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ma, Siguang. “Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation.” 2014. Thesis, UCLA. Accessed October 24, 2020. http://www.escholarship.org/uc/item/1hr0n43f.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ma, Siguang. “Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation.” 2014. Web. 24 Oct 2020.

Vancouver:

Ma S. Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation. [Internet] [Thesis]. UCLA; 2014. [cited 2020 Oct 24]. Available from: http://www.escholarship.org/uc/item/1hr0n43f.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ma S. Silicon-Germanium Based Tunnel Field Effect Transistor for Low Power Computation. [Thesis]. UCLA; 2014. Available from: http://www.escholarship.org/uc/item/1hr0n43f

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


UCLA

21. Wu, Hao. Barrier-free contact to MoS2 transistor and the transport properties of its localized states.

Degree: Materials Science and Engineering, 2017, UCLA

 The two-dimensional layered materials such as molybdenum disulfide (MoS2) have attracted tremendous interest as a new class of electronic materials. However, there are considerable challenges… (more)

Subjects/Keywords: Engineering; electronic transport; field effect transistor; two dimensional materials

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APA (6th Edition):

Wu, H. (2017). Barrier-free contact to MoS2 transistor and the transport properties of its localized states. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/5jv4z3w6

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Hao. “Barrier-free contact to MoS2 transistor and the transport properties of its localized states.” 2017. Thesis, UCLA. Accessed October 24, 2020. http://www.escholarship.org/uc/item/5jv4z3w6.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Hao. “Barrier-free contact to MoS2 transistor and the transport properties of its localized states.” 2017. Web. 24 Oct 2020.

Vancouver:

Wu H. Barrier-free contact to MoS2 transistor and the transport properties of its localized states. [Internet] [Thesis]. UCLA; 2017. [cited 2020 Oct 24]. Available from: http://www.escholarship.org/uc/item/5jv4z3w6.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu H. Barrier-free contact to MoS2 transistor and the transport properties of its localized states. [Thesis]. UCLA; 2017. Available from: http://www.escholarship.org/uc/item/5jv4z3w6

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

22. Cazalas, Edward Jay. Radiation Sensitivity of Graphene Field Effect Transistors and Other Thin Film Architectures.

Degree: 2015, Penn State University

 An important contemporary motivation for advancing radiation detection science and technology is the need for interdiction of nuclear and radiological materials, which may be used… (more)

Subjects/Keywords: graphene; field effect transistor; neutron; detection; radiation; thin film; hysteresis

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APA (6th Edition):

Cazalas, E. J. (2015). Radiation Sensitivity of Graphene Field Effect Transistors and Other Thin Film Architectures. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/24270

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Cazalas, Edward Jay. “Radiation Sensitivity of Graphene Field Effect Transistors and Other Thin Film Architectures.” 2015. Thesis, Penn State University. Accessed October 24, 2020. https://submit-etda.libraries.psu.edu/catalog/24270.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Cazalas, Edward Jay. “Radiation Sensitivity of Graphene Field Effect Transistors and Other Thin Film Architectures.” 2015. Web. 24 Oct 2020.

Vancouver:

Cazalas EJ. Radiation Sensitivity of Graphene Field Effect Transistors and Other Thin Film Architectures. [Internet] [Thesis]. Penn State University; 2015. [cited 2020 Oct 24]. Available from: https://submit-etda.libraries.psu.edu/catalog/24270.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cazalas EJ. Radiation Sensitivity of Graphene Field Effect Transistors and Other Thin Film Architectures. [Thesis]. Penn State University; 2015. Available from: https://submit-etda.libraries.psu.edu/catalog/24270

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of KwaZulu-Natal

23. Oyedeji, Okikioluwa Ezekiel. Improved parametric analysis of cylindrical surrounding double-gate (CSDG) MOSFET.

Degree: 2018, University of KwaZulu-Natal

 Transistors are major components in designing and fabricating high-speed switching devices and micro-electronics. The Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is popular and highly… (more)

Subjects/Keywords: Transistors.; Switches.; Metal Oxide Semiconductor Field Effect Transistor.; MOSFET.; Thermal effects.

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APA (6th Edition):

Oyedeji, O. E. (2018). Improved parametric analysis of cylindrical surrounding double-gate (CSDG) MOSFET. (Thesis). University of KwaZulu-Natal. Retrieved from https://researchspace.ukzn.ac.za/handle/10413/17474

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Oyedeji, Okikioluwa Ezekiel. “Improved parametric analysis of cylindrical surrounding double-gate (CSDG) MOSFET.” 2018. Thesis, University of KwaZulu-Natal. Accessed October 24, 2020. https://researchspace.ukzn.ac.za/handle/10413/17474.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Oyedeji, Okikioluwa Ezekiel. “Improved parametric analysis of cylindrical surrounding double-gate (CSDG) MOSFET.” 2018. Web. 24 Oct 2020.

Vancouver:

Oyedeji OE. Improved parametric analysis of cylindrical surrounding double-gate (CSDG) MOSFET. [Internet] [Thesis]. University of KwaZulu-Natal; 2018. [cited 2020 Oct 24]. Available from: https://researchspace.ukzn.ac.za/handle/10413/17474.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Oyedeji OE. Improved parametric analysis of cylindrical surrounding double-gate (CSDG) MOSFET. [Thesis]. University of KwaZulu-Natal; 2018. Available from: https://researchspace.ukzn.ac.za/handle/10413/17474

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

24. Yu, Rui-An. Study on hysteresis in two-dimensional InSe field effect transistors.

Degree: Master, Physics, 2018, NSYSU

Field effect transistors (FETs) made by few-layered indium selenide (InSe) exhibit good electrical characteristics. However, hysteresis is often observed in InSe-FETs which can affect intrinsic… (more)

Subjects/Keywords: Two-dimensional material; Indium selenide; Hysteresis; Field effect transistor; Traps

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APA (6th Edition):

Yu, R. (2018). Study on hysteresis in two-dimensional InSe field effect transistors. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721118-141211

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yu, Rui-An. “Study on hysteresis in two-dimensional InSe field effect transistors.” 2018. Thesis, NSYSU. Accessed October 24, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721118-141211.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yu, Rui-An. “Study on hysteresis in two-dimensional InSe field effect transistors.” 2018. Web. 24 Oct 2020.

Vancouver:

Yu R. Study on hysteresis in two-dimensional InSe field effect transistors. [Internet] [Thesis]. NSYSU; 2018. [cited 2020 Oct 24]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721118-141211.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yu R. Study on hysteresis in two-dimensional InSe field effect transistors. [Thesis]. NSYSU; 2018. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0721118-141211

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Victoria University of Wellington

25. Matthews, Campbell. Laterally Grown ZnO Nanowires for Sensing Applications.

Degree: 2018, Victoria University of Wellington

 Zinc oxide nanowires are a semiconducting material that has many uses in electronic applications. In particular, ZnO nanowires have been used in field effect transistors… (more)

Subjects/Keywords: ZnO; Nanowires; FET; Sensing; Device; Field effect transistor; Zinc Oxide; Nanomaterials

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APA (6th Edition):

Matthews, C. (2018). Laterally Grown ZnO Nanowires for Sensing Applications. (Masters Thesis). Victoria University of Wellington. Retrieved from http://hdl.handle.net/10063/6993

Chicago Manual of Style (16th Edition):

Matthews, Campbell. “Laterally Grown ZnO Nanowires for Sensing Applications.” 2018. Masters Thesis, Victoria University of Wellington. Accessed October 24, 2020. http://hdl.handle.net/10063/6993.

MLA Handbook (7th Edition):

Matthews, Campbell. “Laterally Grown ZnO Nanowires for Sensing Applications.” 2018. Web. 24 Oct 2020.

Vancouver:

Matthews C. Laterally Grown ZnO Nanowires for Sensing Applications. [Internet] [Masters thesis]. Victoria University of Wellington; 2018. [cited 2020 Oct 24]. Available from: http://hdl.handle.net/10063/6993.

Council of Science Editors:

Matthews C. Laterally Grown ZnO Nanowires for Sensing Applications. [Masters Thesis]. Victoria University of Wellington; 2018. Available from: http://hdl.handle.net/10063/6993


UCLA

26. GUO, JIAN. Two-dimensional semiconductor and heterostructure for novel electronics and optoelectronics.

Degree: Materials Science and Engineering, 2019, UCLA

 The success of carbon nanotubes and graphene drives people to continuously search for novel low dimensional materials. Among the various discovered two-dimensional (2D) materials, 2D… (more)

Subjects/Keywords: Materials Science; 2D semiconductor; field effect transistor; heterostructure; memory; photodetector

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APA (6th Edition):

GUO, J. (2019). Two-dimensional semiconductor and heterostructure for novel electronics and optoelectronics. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/1x61r9x3

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

GUO, JIAN. “Two-dimensional semiconductor and heterostructure for novel electronics and optoelectronics.” 2019. Thesis, UCLA. Accessed October 24, 2020. http://www.escholarship.org/uc/item/1x61r9x3.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

GUO, JIAN. “Two-dimensional semiconductor and heterostructure for novel electronics and optoelectronics.” 2019. Web. 24 Oct 2020.

Vancouver:

GUO J. Two-dimensional semiconductor and heterostructure for novel electronics and optoelectronics. [Internet] [Thesis]. UCLA; 2019. [cited 2020 Oct 24]. Available from: http://www.escholarship.org/uc/item/1x61r9x3.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

GUO J. Two-dimensional semiconductor and heterostructure for novel electronics and optoelectronics. [Thesis]. UCLA; 2019. Available from: http://www.escholarship.org/uc/item/1x61r9x3

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Miami

27. Cho, Seongman. Study on Ultra Wideband Spectral Response and Efficient Hot Electron Detection using Plasmon Field Effect Transistor.

Degree: PhD, Electrical and Computer Engineering (Engineering), 2017, University of Miami

 Plasmon based field effect transistors (FET) can be used to convert energy induced by incident optical radiation to electrical energy. Plasmonic FETs can efficiently detect… (more)

Subjects/Keywords: Plasmon Field Effect Transistor; broadband photodetection; Localized surface plasmon resonance

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APA (6th Edition):

Cho, S. (2017). Study on Ultra Wideband Spectral Response and Efficient Hot Electron Detection using Plasmon Field Effect Transistor. (Doctoral Dissertation). University of Miami. Retrieved from https://scholarlyrepository.miami.edu/oa_dissertations/1985

Chicago Manual of Style (16th Edition):

Cho, Seongman. “Study on Ultra Wideband Spectral Response and Efficient Hot Electron Detection using Plasmon Field Effect Transistor.” 2017. Doctoral Dissertation, University of Miami. Accessed October 24, 2020. https://scholarlyrepository.miami.edu/oa_dissertations/1985.

MLA Handbook (7th Edition):

Cho, Seongman. “Study on Ultra Wideband Spectral Response and Efficient Hot Electron Detection using Plasmon Field Effect Transistor.” 2017. Web. 24 Oct 2020.

Vancouver:

Cho S. Study on Ultra Wideband Spectral Response and Efficient Hot Electron Detection using Plasmon Field Effect Transistor. [Internet] [Doctoral dissertation]. University of Miami; 2017. [cited 2020 Oct 24]. Available from: https://scholarlyrepository.miami.edu/oa_dissertations/1985.

Council of Science Editors:

Cho S. Study on Ultra Wideband Spectral Response and Efficient Hot Electron Detection using Plasmon Field Effect Transistor. [Doctoral Dissertation]. University of Miami; 2017. Available from: https://scholarlyrepository.miami.edu/oa_dissertations/1985


University of Illinois – Urbana-Champaign

28. Robbins, David H. Optimum gate arrangements for MOS standardized layouts.

Degree: MS, Electrical Engineering, 1975, University of Illinois – Urbana-Champaign

 Optimization of size is an important topic of research in the engineering of digital circuits. The field effect transistor (FET) is making an important contribution… (more)

Subjects/Keywords: Field Effect Transistor (FET)

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APA (6th Edition):

Robbins, D. H. (1975). Optimum gate arrangements for MOS standardized layouts. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/45707

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Robbins, David H. “Optimum gate arrangements for MOS standardized layouts.” 1975. Thesis, University of Illinois – Urbana-Champaign. Accessed October 24, 2020. http://hdl.handle.net/2142/45707.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Robbins, David H. “Optimum gate arrangements for MOS standardized layouts.” 1975. Web. 24 Oct 2020.

Vancouver:

Robbins DH. Optimum gate arrangements for MOS standardized layouts. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 1975. [cited 2020 Oct 24]. Available from: http://hdl.handle.net/2142/45707.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Robbins DH. Optimum gate arrangements for MOS standardized layouts. [Thesis]. University of Illinois – Urbana-Champaign; 1975. Available from: http://hdl.handle.net/2142/45707

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Heriot-Watt University

29. Manookian, Wahak Z. Influence of preparation condition on hydrogenated amorphous silicon FETs.

Degree: PhD, 1987, Heriot-Watt University

Subjects/Keywords: 621.31042; Field effect transistor device

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Manookian, W. Z. (1987). Influence of preparation condition on hydrogenated amorphous silicon FETs. (Doctoral Dissertation). Heriot-Watt University. Retrieved from http://hdl.handle.net/10399/1056

Chicago Manual of Style (16th Edition):

Manookian, Wahak Z. “Influence of preparation condition on hydrogenated amorphous silicon FETs.” 1987. Doctoral Dissertation, Heriot-Watt University. Accessed October 24, 2020. http://hdl.handle.net/10399/1056.

MLA Handbook (7th Edition):

Manookian, Wahak Z. “Influence of preparation condition on hydrogenated amorphous silicon FETs.” 1987. Web. 24 Oct 2020.

Vancouver:

Manookian WZ. Influence of preparation condition on hydrogenated amorphous silicon FETs. [Internet] [Doctoral dissertation]. Heriot-Watt University; 1987. [cited 2020 Oct 24]. Available from: http://hdl.handle.net/10399/1056.

Council of Science Editors:

Manookian WZ. Influence of preparation condition on hydrogenated amorphous silicon FETs. [Doctoral Dissertation]. Heriot-Watt University; 1987. Available from: http://hdl.handle.net/10399/1056


University of Waterloo

30. Yin, Demin. Performance Limit and Design Strategy of Black Phosphorus Field-Effect Transistors.

Degree: 2016, University of Waterloo

 Recently, a novel two-dimensional (2D) semiconductor of few-layer black phosphorus (BP) or phosphorene has been explored extensively for future electronic device applications. BP field-effect transistors… (more)

Subjects/Keywords: Black phosphorus; Field effect transistor; 2D material; Nonequilibrium Green's Functions

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yin, D. (2016). Performance Limit and Design Strategy of Black Phosphorus Field-Effect Transistors. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/10646

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yin, Demin. “Performance Limit and Design Strategy of Black Phosphorus Field-Effect Transistors.” 2016. Thesis, University of Waterloo. Accessed October 24, 2020. http://hdl.handle.net/10012/10646.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yin, Demin. “Performance Limit and Design Strategy of Black Phosphorus Field-Effect Transistors.” 2016. Web. 24 Oct 2020.

Vancouver:

Yin D. Performance Limit and Design Strategy of Black Phosphorus Field-Effect Transistors. [Internet] [Thesis]. University of Waterloo; 2016. [cited 2020 Oct 24]. Available from: http://hdl.handle.net/10012/10646.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yin D. Performance Limit and Design Strategy of Black Phosphorus Field-Effect Transistors. [Thesis]. University of Waterloo; 2016. Available from: http://hdl.handle.net/10012/10646

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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