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You searched for subject:(FET). Showing records 1 – 30 of 266 total matches.

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University of Debrecen

1. Magos, Cintia. A [18F]Fluoro-Etil-Tirozin tartalmú PET radiogyógyszer stabilitás vizsgálata .

Degree: DE – Általános Orvostudományi Kar, University of Debrecen

 Magyarországon onkológiai, illetve kardiológiai célú PET/CT vizsgálatokhoz a [18F]FDG, [11C]metionin, [11C]kolin és a [11C]acetát-Na áll rendelkezésre, melyek radiogyógyszerként vannak törzskönyvezve. A Debreceni Egyetem Nukleáris Medicina… (more)

Subjects/Keywords: FET

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APA (6th Edition):

Magos, C. (n.d.). A [18F]Fluoro-Etil-Tirozin tartalmú PET radiogyógyszer stabilitás vizsgálata . (Thesis). University of Debrecen. Retrieved from http://hdl.handle.net/2437/214590

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Magos, Cintia. “A [18F]Fluoro-Etil-Tirozin tartalmú PET radiogyógyszer stabilitás vizsgálata .” Thesis, University of Debrecen. Accessed October 17, 2019. http://hdl.handle.net/2437/214590.

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Magos, Cintia. “A [18F]Fluoro-Etil-Tirozin tartalmú PET radiogyógyszer stabilitás vizsgálata .” Web. 17 Oct 2019.

Note: this citation may be lacking information needed for this citation format:
No year of publication.

Vancouver:

Magos C. A [18F]Fluoro-Etil-Tirozin tartalmú PET radiogyógyszer stabilitás vizsgálata . [Internet] [Thesis]. University of Debrecen; [cited 2019 Oct 17]. Available from: http://hdl.handle.net/2437/214590.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

Council of Science Editors:

Magos C. A [18F]Fluoro-Etil-Tirozin tartalmú PET radiogyógyszer stabilitás vizsgálata . [Thesis]. University of Debrecen; Available from: http://hdl.handle.net/2437/214590

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.


University of Notre Dame

2. Wenjun Li. Gallium Nitride Field-Effect Transistors for Low-Power Applications</h1>.

Degree: PhD, Electrical Engineering, 2016, University of Notre Dame

  For applications in ultra-scaled integrated circuits (ICs) and future Internet of Things (IoT), digital and high-speed analog devices capable of low power operation are… (more)

Subjects/Keywords: nanowire FET; Gallium Nitride; Tunnel FET; nanowire FET; Tunnel FET

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APA (6th Edition):

Li, W. (2016). Gallium Nitride Field-Effect Transistors for Low-Power Applications</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/2f75r783t8k

Chicago Manual of Style (16th Edition):

Li, Wenjun. “Gallium Nitride Field-Effect Transistors for Low-Power Applications</h1>.” 2016. Doctoral Dissertation, University of Notre Dame. Accessed October 17, 2019. https://curate.nd.edu/show/2f75r783t8k.

MLA Handbook (7th Edition):

Li, Wenjun. “Gallium Nitride Field-Effect Transistors for Low-Power Applications</h1>.” 2016. Web. 17 Oct 2019.

Vancouver:

Li W. Gallium Nitride Field-Effect Transistors for Low-Power Applications</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2016. [cited 2019 Oct 17]. Available from: https://curate.nd.edu/show/2f75r783t8k.

Council of Science Editors:

Li W. Gallium Nitride Field-Effect Transistors for Low-Power Applications</h1>. [Doctoral Dissertation]. University of Notre Dame; 2016. Available from: https://curate.nd.edu/show/2f75r783t8k


University of Notre Dame

3. Guowang Li. Nitride Channels on Aluminum Nitride: Materials and Devices</h1>.

Degree: PhD, Electrical Engineering, 2015, University of Notre Dame

  III-nitride electronic devices have made significant progress in high frequency and high power applications in the past decade. In this work, nitride heterostructures with… (more)

Subjects/Keywords: GaN; AlN; FET; MBE

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APA (6th Edition):

Li, G. (2015). Nitride Channels on Aluminum Nitride: Materials and Devices</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/z029p269t5c

Chicago Manual of Style (16th Edition):

Li, Guowang. “Nitride Channels on Aluminum Nitride: Materials and Devices</h1>.” 2015. Doctoral Dissertation, University of Notre Dame. Accessed October 17, 2019. https://curate.nd.edu/show/z029p269t5c.

MLA Handbook (7th Edition):

Li, Guowang. “Nitride Channels on Aluminum Nitride: Materials and Devices</h1>.” 2015. Web. 17 Oct 2019.

Vancouver:

Li G. Nitride Channels on Aluminum Nitride: Materials and Devices</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2015. [cited 2019 Oct 17]. Available from: https://curate.nd.edu/show/z029p269t5c.

Council of Science Editors:

Li G. Nitride Channels on Aluminum Nitride: Materials and Devices</h1>. [Doctoral Dissertation]. University of Notre Dame; 2015. Available from: https://curate.nd.edu/show/z029p269t5c


University of Notre Dame

4. Kristof Tahy. 2D Graphene and Graphene Nanoribbon Field Effect Transistors</h1>.

Degree: PhD, Electrical Engineering, 2012, University of Notre Dame

  The impressive properties of graphene such as the linear energy dispersion relation, room-temperature mobility as high as 15 000 cm2/V.s, and current densities in… (more)

Subjects/Keywords: transistor; graphene; FET; nanoribbon

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APA (6th Edition):

Tahy, K. (2012). 2D Graphene and Graphene Nanoribbon Field Effect Transistors</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/mw22v40831h

Chicago Manual of Style (16th Edition):

Tahy, Kristof. “2D Graphene and Graphene Nanoribbon Field Effect Transistors</h1>.” 2012. Doctoral Dissertation, University of Notre Dame. Accessed October 17, 2019. https://curate.nd.edu/show/mw22v40831h.

MLA Handbook (7th Edition):

Tahy, Kristof. “2D Graphene and Graphene Nanoribbon Field Effect Transistors</h1>.” 2012. Web. 17 Oct 2019.

Vancouver:

Tahy K. 2D Graphene and Graphene Nanoribbon Field Effect Transistors</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2012. [cited 2019 Oct 17]. Available from: https://curate.nd.edu/show/mw22v40831h.

Council of Science Editors:

Tahy K. 2D Graphene and Graphene Nanoribbon Field Effect Transistors</h1>. [Doctoral Dissertation]. University of Notre Dame; 2012. Available from: https://curate.nd.edu/show/mw22v40831h


Seton Hall University

5. Hedgpeth, Bryan Matthew. Analysis of Sublethal Toxicity in Developing Zebrafish Embryos Exposed to a Range of Petroleum Substances using BE-SPME and Whole Transcriptome Microarray.

Degree: PhD, Biology, 2019, Seton Hall University

  The OECD 236 Fish Embryo Acute Toxicity Test guideline relies on four endpoints to describe exposure related effects (coagulation, lack of somite formation, tail-bud… (more)

Subjects/Keywords: Zebrafish; Sublethal; PAH; FET; Biology

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APA (6th Edition):

Hedgpeth, B. M. (2019). Analysis of Sublethal Toxicity in Developing Zebrafish Embryos Exposed to a Range of Petroleum Substances using BE-SPME and Whole Transcriptome Microarray. (Doctoral Dissertation). Seton Hall University. Retrieved from https://scholarship.shu.edu/dissertations/2628

Chicago Manual of Style (16th Edition):

Hedgpeth, Bryan Matthew. “Analysis of Sublethal Toxicity in Developing Zebrafish Embryos Exposed to a Range of Petroleum Substances using BE-SPME and Whole Transcriptome Microarray.” 2019. Doctoral Dissertation, Seton Hall University. Accessed October 17, 2019. https://scholarship.shu.edu/dissertations/2628.

MLA Handbook (7th Edition):

Hedgpeth, Bryan Matthew. “Analysis of Sublethal Toxicity in Developing Zebrafish Embryos Exposed to a Range of Petroleum Substances using BE-SPME and Whole Transcriptome Microarray.” 2019. Web. 17 Oct 2019.

Vancouver:

Hedgpeth BM. Analysis of Sublethal Toxicity in Developing Zebrafish Embryos Exposed to a Range of Petroleum Substances using BE-SPME and Whole Transcriptome Microarray. [Internet] [Doctoral dissertation]. Seton Hall University; 2019. [cited 2019 Oct 17]. Available from: https://scholarship.shu.edu/dissertations/2628.

Council of Science Editors:

Hedgpeth BM. Analysis of Sublethal Toxicity in Developing Zebrafish Embryos Exposed to a Range of Petroleum Substances using BE-SPME and Whole Transcriptome Microarray. [Doctoral Dissertation]. Seton Hall University; 2019. Available from: https://scholarship.shu.edu/dissertations/2628


Brno University of Technology

6. Novák, Martin. Analýza transportních vlastností grafenových nanostruktur .

Degree: 2015, Brno University of Technology

 V této práci jsou analyzovány transportní vlastnosti grafenu. Ty jsou velmi závislé na dopování nosiči náboje. Počet nosičů náboje může být ovlivněn elektrickým polem, substrátem… (more)

Subjects/Keywords: Grafen; FET; grafenový tranzistor; Al2O3.; Graphene; FET; graphene transistor; Al2O3.

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APA (6th Edition):

Novák, M. (2015). Analýza transportních vlastností grafenových nanostruktur . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/41512

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Novák, Martin. “Analýza transportních vlastností grafenových nanostruktur .” 2015. Thesis, Brno University of Technology. Accessed October 17, 2019. http://hdl.handle.net/11012/41512.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Novák, Martin. “Analýza transportních vlastností grafenových nanostruktur .” 2015. Web. 17 Oct 2019.

Vancouver:

Novák M. Analýza transportních vlastností grafenových nanostruktur . [Internet] [Thesis]. Brno University of Technology; 2015. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/11012/41512.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Novák M. Analýza transportních vlastností grafenových nanostruktur . [Thesis]. Brno University of Technology; 2015. Available from: http://hdl.handle.net/11012/41512

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

7. Lu, Shang-Chun. AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework.

Degree: PhD, Electrical & Computer Engr, 2019, University of Illinois – Urbana-Champaign

 As logic devices are nearing their physical scaling limit, many new materials and novel device-operation concepts have been proposed lately. Among the most promising candidates,… (more)

Subjects/Keywords: 2D materials; tunnel FET; density functional theory; NEGF; nanowire FET

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APA (6th Edition):

Lu, S. (2019). AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/104850

Chicago Manual of Style (16th Edition):

Lu, Shang-Chun. “AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework.” 2019. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed October 17, 2019. http://hdl.handle.net/2142/104850.

MLA Handbook (7th Edition):

Lu, Shang-Chun. “AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework.” 2019. Web. 17 Oct 2019.

Vancouver:

Lu S. AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2019. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/2142/104850.

Council of Science Editors:

Lu S. AB initio study and design of 2D materials/III-nitrides-based post-CMOS devices using first-principles multiphysics simulation framework. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2019. Available from: http://hdl.handle.net/2142/104850

8. O'Toole, Naomh. Developing a culture of professional practice learning in an FET context.

Degree: 2019, NUI Galway

This research explored ways of promoting a professional learning community (PLC) in the further education and training (FET) context. There was limited evidence related to… (more)

Subjects/Keywords: Professional practice learning FET; Professional practice learning; FET; Education

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APA (6th Edition):

O'Toole, N. (2019). Developing a culture of professional practice learning in an FET context. (Thesis). NUI Galway. Retrieved from http://hdl.handle.net/10379/14771

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

O'Toole, Naomh. “Developing a culture of professional practice learning in an FET context.” 2019. Thesis, NUI Galway. Accessed October 17, 2019. http://hdl.handle.net/10379/14771.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

O'Toole, Naomh. “Developing a culture of professional practice learning in an FET context.” 2019. Web. 17 Oct 2019.

Vancouver:

O'Toole N. Developing a culture of professional practice learning in an FET context. [Internet] [Thesis]. NUI Galway; 2019. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/10379/14771.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

O'Toole N. Developing a culture of professional practice learning in an FET context. [Thesis]. NUI Galway; 2019. Available from: http://hdl.handle.net/10379/14771

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

9. Liddell, Kristi Lynn. Surface functionalization of oxides for biosensing applications.

Degree: PhD, Chemistry, 2014, Penn State University

 Functionalization of oxide materials plays a critical role in the development of electronic-based biosensors, such as field effect transistors (FETs). A dielectric coating (insulator) on… (more)

Subjects/Keywords: dielectric; surface functionalization; FET; surface regeneration

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APA (6th Edition):

Liddell, K. L. (2014). Surface functionalization of oxides for biosensing applications. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/21048

Chicago Manual of Style (16th Edition):

Liddell, Kristi Lynn. “Surface functionalization of oxides for biosensing applications.” 2014. Doctoral Dissertation, Penn State University. Accessed October 17, 2019. https://etda.libraries.psu.edu/catalog/21048.

MLA Handbook (7th Edition):

Liddell, Kristi Lynn. “Surface functionalization of oxides for biosensing applications.” 2014. Web. 17 Oct 2019.

Vancouver:

Liddell KL. Surface functionalization of oxides for biosensing applications. [Internet] [Doctoral dissertation]. Penn State University; 2014. [cited 2019 Oct 17]. Available from: https://etda.libraries.psu.edu/catalog/21048.

Council of Science Editors:

Liddell KL. Surface functionalization of oxides for biosensing applications. [Doctoral Dissertation]. Penn State University; 2014. Available from: https://etda.libraries.psu.edu/catalog/21048


Penn State University

10. Mukundrajan, Ravindhiran. Tunnel FET based Field Programmable Gate Arrays.

Degree: MS, Computer Science and Engineering, 2011, Penn State University

 The proliferation of mobile computing systems has created a new segment in the semiconductor ecosystem where energy eciency is the most critical design parameter. Moreover,… (more)

Subjects/Keywords: Emerging nanotech; Tunnel FET; FPGA; Low Power

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APA (6th Edition):

Mukundrajan, R. (2011). Tunnel FET based Field Programmable Gate Arrays. (Masters Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/12004

Chicago Manual of Style (16th Edition):

Mukundrajan, Ravindhiran. “Tunnel FET based Field Programmable Gate Arrays.” 2011. Masters Thesis, Penn State University. Accessed October 17, 2019. https://etda.libraries.psu.edu/catalog/12004.

MLA Handbook (7th Edition):

Mukundrajan, Ravindhiran. “Tunnel FET based Field Programmable Gate Arrays.” 2011. Web. 17 Oct 2019.

Vancouver:

Mukundrajan R. Tunnel FET based Field Programmable Gate Arrays. [Internet] [Masters thesis]. Penn State University; 2011. [cited 2019 Oct 17]. Available from: https://etda.libraries.psu.edu/catalog/12004.

Council of Science Editors:

Mukundrajan R. Tunnel FET based Field Programmable Gate Arrays. [Masters Thesis]. Penn State University; 2011. Available from: https://etda.libraries.psu.edu/catalog/12004


Penn State University

11. Kao, Wei-Chieh. IMPACT OF INTERFACE STATES ON.

Degree: MS, Electrical Engineering, 2010, Penn State University

 In the past four decades, logic transistor scaling following Moore’s Law has resulted in unprecedented increase in logic performance. However, the exponentially rising transistor count… (more)

Subjects/Keywords: Interface states; HEMT; Tunnel FET; InGaAs; MOSFET

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APA (6th Edition):

Kao, W. (2010). IMPACT OF INTERFACE STATES ON. (Masters Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/10880

Chicago Manual of Style (16th Edition):

Kao, Wei-Chieh. “IMPACT OF INTERFACE STATES ON.” 2010. Masters Thesis, Penn State University. Accessed October 17, 2019. https://etda.libraries.psu.edu/catalog/10880.

MLA Handbook (7th Edition):

Kao, Wei-Chieh. “IMPACT OF INTERFACE STATES ON.” 2010. Web. 17 Oct 2019.

Vancouver:

Kao W. IMPACT OF INTERFACE STATES ON. [Internet] [Masters thesis]. Penn State University; 2010. [cited 2019 Oct 17]. Available from: https://etda.libraries.psu.edu/catalog/10880.

Council of Science Editors:

Kao W. IMPACT OF INTERFACE STATES ON. [Masters Thesis]. Penn State University; 2010. Available from: https://etda.libraries.psu.edu/catalog/10880

12. Gunnar Reynisson 1974. Hreyfigreining á feti og tölti íslenskra hrossa .

Degree: 2012, Agricultural University of Iceland

 Rannsóknin var gerð til að meta eiginleika gangtegundanna fets og tölts og fylgni á milli einstakra þátta hjá þessum tveimur gangtegundum. Í rannsóknina voru notaðir… (more)

Subjects/Keywords: Hreyfigreining; Skreflengd; Skreftími; Fet; Tölt; Taktur

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APA (6th Edition):

1974, G. R. (2012). Hreyfigreining á feti og tölti íslenskra hrossa . (Thesis). Agricultural University of Iceland. Retrieved from http://hdl.handle.net/1946/10862

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

1974, Gunnar Reynisson. “Hreyfigreining á feti og tölti íslenskra hrossa .” 2012. Thesis, Agricultural University of Iceland. Accessed October 17, 2019. http://hdl.handle.net/1946/10862.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

1974, Gunnar Reynisson. “Hreyfigreining á feti og tölti íslenskra hrossa .” 2012. Web. 17 Oct 2019.

Vancouver:

1974 GR. Hreyfigreining á feti og tölti íslenskra hrossa . [Internet] [Thesis]. Agricultural University of Iceland; 2012. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/1946/10862.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

1974 GR. Hreyfigreining á feti og tölti íslenskra hrossa . [Thesis]. Agricultural University of Iceland; 2012. Available from: http://hdl.handle.net/1946/10862

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

13. Choi, Jonghyun. Three-dimensional graphene/graphite structure for ultra-sensitive biosensor.

Degree: MS, 0133, 2014, University of Illinois – Urbana-Champaign

 Graphene has been attracting significant research interests for post-silicon electronics due to its unique properties such as extraordinarily high carrier mobility, mechanical robustness/flexibility and biocompatibility.… (more)

Subjects/Keywords: Graphene; Bio-sensing; Field Effect Transistor (FET)

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APA (6th Edition):

Choi, J. (2014). Three-dimensional graphene/graphite structure for ultra-sensitive biosensor. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/50491

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Choi, Jonghyun. “Three-dimensional graphene/graphite structure for ultra-sensitive biosensor.” 2014. Thesis, University of Illinois – Urbana-Champaign. Accessed October 17, 2019. http://hdl.handle.net/2142/50491.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Choi, Jonghyun. “Three-dimensional graphene/graphite structure for ultra-sensitive biosensor.” 2014. Web. 17 Oct 2019.

Vancouver:

Choi J. Three-dimensional graphene/graphite structure for ultra-sensitive biosensor. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2014. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/2142/50491.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Choi J. Three-dimensional graphene/graphite structure for ultra-sensitive biosensor. [Thesis]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/50491

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Notre Dame

14. Yeqing Lu. Design and Fabrication of Vertical Tunnel Transistors for Low-Power Logic Applications</h1>.

Degree: PhD, Electrical Engineering, 2015, University of Notre Dame

  Interband tunneling field effect transistors (TFETs) have come under intensive investigation for logic applications due to their promise for enabling low VDD operation because… (more)

Subjects/Keywords: AlGaSb; InAs; tunneling; Tunnel FET; TFET

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APA (6th Edition):

Lu, Y. (2015). Design and Fabrication of Vertical Tunnel Transistors for Low-Power Logic Applications</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/5q47rn31x7h

Chicago Manual of Style (16th Edition):

Lu, Yeqing. “Design and Fabrication of Vertical Tunnel Transistors for Low-Power Logic Applications</h1>.” 2015. Doctoral Dissertation, University of Notre Dame. Accessed October 17, 2019. https://curate.nd.edu/show/5q47rn31x7h.

MLA Handbook (7th Edition):

Lu, Yeqing. “Design and Fabrication of Vertical Tunnel Transistors for Low-Power Logic Applications</h1>.” 2015. Web. 17 Oct 2019.

Vancouver:

Lu Y. Design and Fabrication of Vertical Tunnel Transistors for Low-Power Logic Applications</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2015. [cited 2019 Oct 17]. Available from: https://curate.nd.edu/show/5q47rn31x7h.

Council of Science Editors:

Lu Y. Design and Fabrication of Vertical Tunnel Transistors for Low-Power Logic Applications</h1>. [Doctoral Dissertation]. University of Notre Dame; 2015. Available from: https://curate.nd.edu/show/5q47rn31x7h


University of Notre Dame

15. Yeqing Lu. Tunnel Transistor Modeling</h1>.

Degree: MSin Electrical Engineering, Electrical Engineering, 2011, University of Notre Dame

  Tunneling field effect transistors (TFETs) have recently attracted considerable interest because of their potential use in low power logic applications. The major advantage of… (more)

Subjects/Keywords: TCAD simulation; Tunnel FET; analytical modeling

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APA (6th Edition):

Lu, Y. (2011). Tunnel Transistor Modeling</h1>. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/ns064457k93

Chicago Manual of Style (16th Edition):

Lu, Yeqing. “Tunnel Transistor Modeling</h1>.” 2011. Masters Thesis, University of Notre Dame. Accessed October 17, 2019. https://curate.nd.edu/show/ns064457k93.

MLA Handbook (7th Edition):

Lu, Yeqing. “Tunnel Transistor Modeling</h1>.” 2011. Web. 17 Oct 2019.

Vancouver:

Lu Y. Tunnel Transistor Modeling</h1>. [Internet] [Masters thesis]. University of Notre Dame; 2011. [cited 2019 Oct 17]. Available from: https://curate.nd.edu/show/ns064457k93.

Council of Science Editors:

Lu Y. Tunnel Transistor Modeling</h1>. [Masters Thesis]. University of Notre Dame; 2011. Available from: https://curate.nd.edu/show/ns064457k93


Arizona State University

16. Liang, Hanshuang. Electron transport properties in one-dimensional III-V nanowire transistors.

Degree: MS, Electrical Engineering, 2011, Arizona State University

 Semiconductor nanowires are featured by their unique one-dimensional structure which makes them promising for small scale electronic and photonic device applications. Among them, III-V material… (more)

Subjects/Keywords: Electrical engineering; FET; Nanowire; Solid State

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APA (6th Edition):

Liang, H. (2011). Electron transport properties in one-dimensional III-V nanowire transistors. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/14423

Chicago Manual of Style (16th Edition):

Liang, Hanshuang. “Electron transport properties in one-dimensional III-V nanowire transistors.” 2011. Masters Thesis, Arizona State University. Accessed October 17, 2019. http://repository.asu.edu/items/14423.

MLA Handbook (7th Edition):

Liang, Hanshuang. “Electron transport properties in one-dimensional III-V nanowire transistors.” 2011. Web. 17 Oct 2019.

Vancouver:

Liang H. Electron transport properties in one-dimensional III-V nanowire transistors. [Internet] [Masters thesis]. Arizona State University; 2011. [cited 2019 Oct 17]. Available from: http://repository.asu.edu/items/14423.

Council of Science Editors:

Liang H. Electron transport properties in one-dimensional III-V nanowire transistors. [Masters Thesis]. Arizona State University; 2011. Available from: http://repository.asu.edu/items/14423


Johannes Gutenberg Universität Mainz

17. Stelzig, Timea. Donor–acceptor systems in the quest for organic semiconductors.

Degree: 2012, Johannes Gutenberg Universität Mainz

Die letzten Jahrzehnte brachten eine Vielzahl neuer organischen Halbleiter hervor, welche erfolgreich als aktive Materialien in Bauteilen eingesetzt wurden, wie zum Beispiel Feldeffekttransistoren (FET), organische… (more)

Subjects/Keywords: organische Halbleiter, Thiadiazoloquinoxalin, FET, ambipolar; organic semiconductor, thiadiazoloquinoxaline, FET, ambipolar; Chemistry and allied sciences

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APA (6th Edition):

Stelzig, T. (2012). Donor–acceptor systems in the quest for organic semiconductors. (Doctoral Dissertation). Johannes Gutenberg Universität Mainz. Retrieved from http://ubm.opus.hbz-nrw.de/volltexte/2012/3099/

Chicago Manual of Style (16th Edition):

Stelzig, Timea. “Donor–acceptor systems in the quest for organic semiconductors.” 2012. Doctoral Dissertation, Johannes Gutenberg Universität Mainz. Accessed October 17, 2019. http://ubm.opus.hbz-nrw.de/volltexte/2012/3099/.

MLA Handbook (7th Edition):

Stelzig, Timea. “Donor–acceptor systems in the quest for organic semiconductors.” 2012. Web. 17 Oct 2019.

Vancouver:

Stelzig T. Donor–acceptor systems in the quest for organic semiconductors. [Internet] [Doctoral dissertation]. Johannes Gutenberg Universität Mainz; 2012. [cited 2019 Oct 17]. Available from: http://ubm.opus.hbz-nrw.de/volltexte/2012/3099/.

Council of Science Editors:

Stelzig T. Donor–acceptor systems in the quest for organic semiconductors. [Doctoral Dissertation]. Johannes Gutenberg Universität Mainz; 2012. Available from: http://ubm.opus.hbz-nrw.de/volltexte/2012/3099/

18. Goncalves Pereira, Fabio. Advanced numerical modeling applied to current prediction in ultimate CMOS devices : Modélisations numériques avancées pour la prédiction des courants dans les dispositifs CMOS ultimes.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2016, Grenoble Alpes

Parmi les plus important dispositifs pour l'industrie des semi-conducteurs, le transistor “Metal Oxide Semiconductor Field-Effect Transistor” (MOSFET) est largement utilisé pour le développement d'un grand… (more)

Subjects/Keywords: Modélisations; Cmos; Transport; Fdsoi; C++; Fet; Modeling; Cmos; Transport; Fdsoi; C++; Fet; 620

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APA (6th Edition):

Goncalves Pereira, F. (2016). Advanced numerical modeling applied to current prediction in ultimate CMOS devices : Modélisations numériques avancées pour la prédiction des courants dans les dispositifs CMOS ultimes. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2016GREAT051

Chicago Manual of Style (16th Edition):

Goncalves Pereira, Fabio. “Advanced numerical modeling applied to current prediction in ultimate CMOS devices : Modélisations numériques avancées pour la prédiction des courants dans les dispositifs CMOS ultimes.” 2016. Doctoral Dissertation, Grenoble Alpes. Accessed October 17, 2019. http://www.theses.fr/2016GREAT051.

MLA Handbook (7th Edition):

Goncalves Pereira, Fabio. “Advanced numerical modeling applied to current prediction in ultimate CMOS devices : Modélisations numériques avancées pour la prédiction des courants dans les dispositifs CMOS ultimes.” 2016. Web. 17 Oct 2019.

Vancouver:

Goncalves Pereira F. Advanced numerical modeling applied to current prediction in ultimate CMOS devices : Modélisations numériques avancées pour la prédiction des courants dans les dispositifs CMOS ultimes. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2016. [cited 2019 Oct 17]. Available from: http://www.theses.fr/2016GREAT051.

Council of Science Editors:

Goncalves Pereira F. Advanced numerical modeling applied to current prediction in ultimate CMOS devices : Modélisations numériques avancées pour la prédiction des courants dans les dispositifs CMOS ultimes. [Doctoral Dissertation]. Grenoble Alpes; 2016. Available from: http://www.theses.fr/2016GREAT051


Brno University of Technology

19. Kurfürstová, Markéta. Grafenové struktury vhodné pro polem řízené tranzistory .

Degree: 2014, Brno University of Technology

 Tato bakalářská práce se zabývá přípravou grafenových struktur vhodných pro tranzistory řízené elektrickým polem. V první části je charakterizován grafen z hlediska jeho vlastností a… (more)

Subjects/Keywords: grafen; tranzistor; FET; elektronová litografie; polovodiče; graphene; transistor; FET; electron beam litography; semiconductors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Kurfürstová, M. (2014). Grafenové struktury vhodné pro polem řízené tranzistory . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/33299

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kurfürstová, Markéta. “Grafenové struktury vhodné pro polem řízené tranzistory .” 2014. Thesis, Brno University of Technology. Accessed October 17, 2019. http://hdl.handle.net/11012/33299.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kurfürstová, Markéta. “Grafenové struktury vhodné pro polem řízené tranzistory .” 2014. Web. 17 Oct 2019.

Vancouver:

Kurfürstová M. Grafenové struktury vhodné pro polem řízené tranzistory . [Internet] [Thesis]. Brno University of Technology; 2014. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/11012/33299.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kurfürstová M. Grafenové struktury vhodné pro polem řízené tranzistory . [Thesis]. Brno University of Technology; 2014. Available from: http://hdl.handle.net/11012/33299

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

20. Palle, Dharmendar Reddy. Modeling of graphene-based FETs for low power digital logic and radio frequency applications.

Degree: PhD, Electrical and Computer Engineering, 2013, University of Texas – Austin

 There are many semiconductors with nominally superior electronic properties compared to silicon. However, silicon became the material of choice for MOSFETs due to its robust… (more)

Subjects/Keywords: Graphene; BiSFET; pseudoSpin; Beyond CMOS; Interlayer tunnel FET; Time dependent quantum transport; Graphene FET

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APA (6th Edition):

Palle, D. R. (2013). Modeling of graphene-based FETs for low power digital logic and radio frequency applications. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/22008

Chicago Manual of Style (16th Edition):

Palle, Dharmendar Reddy. “Modeling of graphene-based FETs for low power digital logic and radio frequency applications.” 2013. Doctoral Dissertation, University of Texas – Austin. Accessed October 17, 2019. http://hdl.handle.net/2152/22008.

MLA Handbook (7th Edition):

Palle, Dharmendar Reddy. “Modeling of graphene-based FETs for low power digital logic and radio frequency applications.” 2013. Web. 17 Oct 2019.

Vancouver:

Palle DR. Modeling of graphene-based FETs for low power digital logic and radio frequency applications. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2013. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/2152/22008.

Council of Science Editors:

Palle DR. Modeling of graphene-based FETs for low power digital logic and radio frequency applications. [Doctoral Dissertation]. University of Texas – Austin; 2013. Available from: http://hdl.handle.net/2152/22008


University of Toledo

21. Koganti, Naga Babu. Modeling and Characterization of Circuit Level Transients in Wide Bandgap Devices.

Degree: MS, Electrical Engineering, 2018, University of Toledo

 Wide bandgap devices (GaN) are an enabling technology for high frequency and high efficiency power electronics. Especially, the combination of low on-resistance and high breakdown… (more)

Subjects/Keywords: Electrical Engineering; half bridge buck converter, synchronous-FET, control-FET, GaN devices, false turn-on, voltage overshoot, analytical modeling, FET substages, circuit level transients

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APA (6th Edition):

Koganti, N. B. (2018). Modeling and Characterization of Circuit Level Transients in Wide Bandgap Devices. (Masters Thesis). University of Toledo. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=toledo153311831687909

Chicago Manual of Style (16th Edition):

Koganti, Naga Babu. “Modeling and Characterization of Circuit Level Transients in Wide Bandgap Devices.” 2018. Masters Thesis, University of Toledo. Accessed October 17, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=toledo153311831687909.

MLA Handbook (7th Edition):

Koganti, Naga Babu. “Modeling and Characterization of Circuit Level Transients in Wide Bandgap Devices.” 2018. Web. 17 Oct 2019.

Vancouver:

Koganti NB. Modeling and Characterization of Circuit Level Transients in Wide Bandgap Devices. [Internet] [Masters thesis]. University of Toledo; 2018. [cited 2019 Oct 17]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=toledo153311831687909.

Council of Science Editors:

Koganti NB. Modeling and Characterization of Circuit Level Transients in Wide Bandgap Devices. [Masters Thesis]. University of Toledo; 2018. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=toledo153311831687909

22. 森山, 慎一. 分子性固体の物性とFET特性.

Degree: Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学

Supervisor:岩佐 義宏

材料科学研究科

修士

Subjects/Keywords: FET,分子性固体; FET,molecular solids

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APA (6th Edition):

森山, . (n.d.). 分子性固体の物性とFET特性. (Thesis). Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学. Retrieved from http://hdl.handle.net/10119/2776

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

森山, 慎一. “分子性固体の物性とFET特性.” Thesis, Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学. Accessed October 17, 2019. http://hdl.handle.net/10119/2776.

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

森山, 慎一. “分子性固体の物性とFET特性.” Web. 17 Oct 2019.

Note: this citation may be lacking information needed for this citation format:
No year of publication.

Vancouver:

森山 . 分子性固体の物性とFET特性. [Internet] [Thesis]. Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学; [cited 2019 Oct 17]. Available from: http://hdl.handle.net/10119/2776.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

Council of Science Editors:

森山 . 分子性固体の物性とFET特性. [Thesis]. Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学; Available from: http://hdl.handle.net/10119/2776

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

23. 井波, 暢人. FET電極からのナノチューブ合成に関する研究.

Degree: Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学

Supervisor:藤原 明比古

材料科学研究科

修士

Subjects/Keywords: ナノチューブ, アルコールCCVD, FET; nanotube, Alcohol CCVD, FET

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APA (6th Edition):

井波, . (n.d.). FET電極からのナノチューブ合成に関する研究. (Thesis). Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学. Retrieved from http://hdl.handle.net/10119/3206

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

井波, 暢人. “FET電極からのナノチューブ合成に関する研究.” Thesis, Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学. Accessed October 17, 2019. http://hdl.handle.net/10119/3206.

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

井波, 暢人. “FET電極からのナノチューブ合成に関する研究.” Web. 17 Oct 2019.

Note: this citation may be lacking information needed for this citation format:
No year of publication.

Vancouver:

井波 . FET電極からのナノチューブ合成に関する研究. [Internet] [Thesis]. Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学; [cited 2019 Oct 17]. Available from: http://hdl.handle.net/10119/3206.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

Council of Science Editors:

井波 . FET電極からのナノチューブ合成に関する研究. [Thesis]. Japan Advanced Institute of Science and Technology / 北陸先端科学技術大学院大学; Available from: http://hdl.handle.net/10119/3206

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.


Southern Illinois University

24. Patil, Prasanna Dnyaneshwar. Investigation of Electronic and Opto-electronic Properties of Two-dimensional Layers (2D) of Copper Indium Selenide Field Effect Transistors.

Degree: MS, Physics, 2017, Southern Illinois University

  Investigations performed in order to understand the electronic and optoelectronic properties of field effect transistors based on few layers of 2D Copper Indium Selenide… (more)

Subjects/Keywords: 2D Materials; Copper Indium Selenide; Electric Double Layer (EDL) - FET; Electronic and Opto-electronic Transport; Field Effect Transistor (FET); Phototransistor

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APA (6th Edition):

Patil, P. D. (2017). Investigation of Electronic and Opto-electronic Properties of Two-dimensional Layers (2D) of Copper Indium Selenide Field Effect Transistors. (Masters Thesis). Southern Illinois University. Retrieved from http://opensiuc.lib.siu.edu/theses/2206

Chicago Manual of Style (16th Edition):

Patil, Prasanna Dnyaneshwar. “Investigation of Electronic and Opto-electronic Properties of Two-dimensional Layers (2D) of Copper Indium Selenide Field Effect Transistors.” 2017. Masters Thesis, Southern Illinois University. Accessed October 17, 2019. http://opensiuc.lib.siu.edu/theses/2206.

MLA Handbook (7th Edition):

Patil, Prasanna Dnyaneshwar. “Investigation of Electronic and Opto-electronic Properties of Two-dimensional Layers (2D) of Copper Indium Selenide Field Effect Transistors.” 2017. Web. 17 Oct 2019.

Vancouver:

Patil PD. Investigation of Electronic and Opto-electronic Properties of Two-dimensional Layers (2D) of Copper Indium Selenide Field Effect Transistors. [Internet] [Masters thesis]. Southern Illinois University; 2017. [cited 2019 Oct 17]. Available from: http://opensiuc.lib.siu.edu/theses/2206.

Council of Science Editors:

Patil PD. Investigation of Electronic and Opto-electronic Properties of Two-dimensional Layers (2D) of Copper Indium Selenide Field Effect Transistors. [Masters Thesis]. Southern Illinois University; 2017. Available from: http://opensiuc.lib.siu.edu/theses/2206


INP Toulouse

25. Delamare, Guillaume. Convertisseurs DC/DC à base de HFETs GaN pour applications spatiales : GaN HFET-based DC/DC converters for space applications.

Degree: Docteur es, Génie électrique, 2015, INP Toulouse

L'amélioration de la compacité et du rendement des convertisseurs à découpage est une problématique centrale en électronique de puissance; elle l'est encore plus à bord… (more)

Subjects/Keywords: Convertisseur DC/DC; FET GaN; HFET; Spatial; Satellite; DC/DC converter; GaN FET; HFET; Space; Satellite

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APA (6th Edition):

Delamare, G. (2015). Convertisseurs DC/DC à base de HFETs GaN pour applications spatiales : GaN HFET-based DC/DC converters for space applications. (Doctoral Dissertation). INP Toulouse. Retrieved from http://www.theses.fr/2015INPT0080

Chicago Manual of Style (16th Edition):

Delamare, Guillaume. “Convertisseurs DC/DC à base de HFETs GaN pour applications spatiales : GaN HFET-based DC/DC converters for space applications.” 2015. Doctoral Dissertation, INP Toulouse. Accessed October 17, 2019. http://www.theses.fr/2015INPT0080.

MLA Handbook (7th Edition):

Delamare, Guillaume. “Convertisseurs DC/DC à base de HFETs GaN pour applications spatiales : GaN HFET-based DC/DC converters for space applications.” 2015. Web. 17 Oct 2019.

Vancouver:

Delamare G. Convertisseurs DC/DC à base de HFETs GaN pour applications spatiales : GaN HFET-based DC/DC converters for space applications. [Internet] [Doctoral dissertation]. INP Toulouse; 2015. [cited 2019 Oct 17]. Available from: http://www.theses.fr/2015INPT0080.

Council of Science Editors:

Delamare G. Convertisseurs DC/DC à base de HFETs GaN pour applications spatiales : GaN HFET-based DC/DC converters for space applications. [Doctoral Dissertation]. INP Toulouse; 2015. Available from: http://www.theses.fr/2015INPT0080


Brno University of Technology

26. Gryga, Michal. Transportní vlastnosti grafenových vrstev během jejich přenosu .

Degree: 2016, Brno University of Technology

 Tato bakalářská práce je zaměřena na studium transportních vlastností grafenu, který byl vyroben metodou chemické depozice z plynné fáze (Chemical Vapor Deposition, CVD) na měděné… (more)

Subjects/Keywords: CVD; přenos grafenu; leptání mědi; plazmatické čištění; FET.; CVD; graphene transfer; copper etching; plasma cleaning; FET.

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APA (6th Edition):

Gryga, M. (2016). Transportní vlastnosti grafenových vrstev během jejich přenosu . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/60012

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gryga, Michal. “Transportní vlastnosti grafenových vrstev během jejich přenosu .” 2016. Thesis, Brno University of Technology. Accessed October 17, 2019. http://hdl.handle.net/11012/60012.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gryga, Michal. “Transportní vlastnosti grafenových vrstev během jejich přenosu .” 2016. Web. 17 Oct 2019.

Vancouver:

Gryga M. Transportní vlastnosti grafenových vrstev během jejich přenosu . [Internet] [Thesis]. Brno University of Technology; 2016. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/11012/60012.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gryga M. Transportní vlastnosti grafenových vrstev během jejich přenosu . [Thesis]. Brno University of Technology; 2016. Available from: http://hdl.handle.net/11012/60012

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

27. Vysocký, Filip. Transportní vlastnosti jednotlivých grafenových zrn .

Degree: 2017, Brno University of Technology

 Tato bakalářská práce je zaměřena na výrobu jednotlivých grafenových zrn metodou chemické depozice z plynné fáze, jejich přenos na nevodivý substrát a následnou výrobu grafenových… (more)

Subjects/Keywords: Grafen; CVD; přenos grafenu; elektronová litografie; FET tranzistor; transportní vlastnosti; Graphene; CVD; graphene transfer; electron beam lithography; FET transistor; transport properties

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APA (6th Edition):

Vysocký, F. (2017). Transportní vlastnosti jednotlivých grafenových zrn . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/64974

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Vysocký, Filip. “Transportní vlastnosti jednotlivých grafenových zrn .” 2017. Thesis, Brno University of Technology. Accessed October 17, 2019. http://hdl.handle.net/11012/64974.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Vysocký, Filip. “Transportní vlastnosti jednotlivých grafenových zrn .” 2017. Web. 17 Oct 2019.

Vancouver:

Vysocký F. Transportní vlastnosti jednotlivých grafenových zrn . [Internet] [Thesis]. Brno University of Technology; 2017. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/11012/64974.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vysocký F. Transportní vlastnosti jednotlivých grafenových zrn . [Thesis]. Brno University of Technology; 2017. Available from: http://hdl.handle.net/11012/64974

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

28. Stará, Veronika. Dotování grafenu pomocí pomalých elektronů .

Degree: 2018, Brno University of Technology

 Tato diplomová práce se zabývá dotováním grafenu nízkoenergiovými elektrony. Na křemíkový substrát pokrytý vrstvou SiO2 jsou pomocí litograficky vyrobené masky nadeponované kovové kontakty z titanu… (more)

Subjects/Keywords: Grafen; FET; dotování; elektronový svazek; CVD; litografie; ALD; Graphene; FET; doping; electron beam; CVD; lithography; ALD

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APA (6th Edition):

Stará, V. (2018). Dotování grafenu pomocí pomalých elektronů . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/83359

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Stará, Veronika. “Dotování grafenu pomocí pomalých elektronů .” 2018. Thesis, Brno University of Technology. Accessed October 17, 2019. http://hdl.handle.net/11012/83359.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Stará, Veronika. “Dotování grafenu pomocí pomalých elektronů .” 2018. Web. 17 Oct 2019.

Vancouver:

Stará V. Dotování grafenu pomocí pomalých elektronů . [Internet] [Thesis]. Brno University of Technology; 2018. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/11012/83359.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Stará V. Dotování grafenu pomocí pomalých elektronů . [Thesis]. Brno University of Technology; 2018. Available from: http://hdl.handle.net/11012/83359

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

29. Czajkowski, Ondřej. Proudové zdroje s tranzistory řízenými elektrickým polem .

Degree: 2008, Brno University of Technology

Simulace proudových zdrojů s tranzistory FET.; Computer simulation of current sources with FETs. Advisors/Committee Members: Horák, Michal (advisor).

Subjects/Keywords: proudový zdroj; tranzistor FET; simulace; current source; FET; simulation

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Czajkowski, O. (2008). Proudové zdroje s tranzistory řízenými elektrickým polem . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/14511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Czajkowski, Ondřej. “Proudové zdroje s tranzistory řízenými elektrickým polem .” 2008. Thesis, Brno University of Technology. Accessed October 17, 2019. http://hdl.handle.net/11012/14511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Czajkowski, Ondřej. “Proudové zdroje s tranzistory řízenými elektrickým polem .” 2008. Web. 17 Oct 2019.

Vancouver:

Czajkowski O. Proudové zdroje s tranzistory řízenými elektrickým polem . [Internet] [Thesis]. Brno University of Technology; 2008. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/11012/14511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Czajkowski O. Proudové zdroje s tranzistory řízenými elektrickým polem . [Thesis]. Brno University of Technology; 2008. Available from: http://hdl.handle.net/11012/14511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

30. Kandera, Tomáš. Návrh řešení hot-swap výměny hlavního akumulátoru mobilního robotu .

Degree: 2018, Brno University of Technology

 Táto práca sa zaoberá analýzou problematiky a dostupných riešení hot-swap kontroléra, ktorý umožňuje výmenu primárneho zdroja na mobilnom zariadení BREACH bez prerušenia prevádzky operačného systému.… (more)

Subjects/Keywords: Hot-Swap; Redundancia; FET-ORing; Li-Ion; Batéria; LTC4236; BREACH; Hot-Swap; Redundancy; FET-ORing; Li-Ion; Battery; LTC4236; BREACH

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Kandera, T. (2018). Návrh řešení hot-swap výměny hlavního akumulátoru mobilního robotu . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/83766

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kandera, Tomáš. “Návrh řešení hot-swap výměny hlavního akumulátoru mobilního robotu .” 2018. Thesis, Brno University of Technology. Accessed October 17, 2019. http://hdl.handle.net/11012/83766.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kandera, Tomáš. “Návrh řešení hot-swap výměny hlavního akumulátoru mobilního robotu .” 2018. Web. 17 Oct 2019.

Vancouver:

Kandera T. Návrh řešení hot-swap výměny hlavního akumulátoru mobilního robotu . [Internet] [Thesis]. Brno University of Technology; 2018. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/11012/83766.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kandera T. Návrh řešení hot-swap výměny hlavního akumulátoru mobilního robotu . [Thesis]. Brno University of Technology; 2018. Available from: http://hdl.handle.net/11012/83766

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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