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You searched for subject:(Etch residue). Showing records 1 – 5 of 5 total matches.

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University of Arizona

1. Padmanabhan Ramalekshmi Thanu, Dinesh. USE OF DILUTE HYDROFLUORIC ACID AND DEEP EUTECTIC SOLVENT SYSTEMS FOR BACK END OF LINE CLEANING IN INTEGRATED CIRCUIT FABRICATION .

Degree: 2011, University of Arizona

 Fabrication of current generation integrated circuits involves the creation of multilevel copper/low-k dielectric structures during the back end of line processing. This is done by… (more)

Subjects/Keywords: Dilute Hydrofluoric Acid; Integrated Circuit Fabrication; Post Etch Residue Removal; Materials Science & Engineering; Back End of Line Cleaning; Deep Eutectic Solvents

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APA (6th Edition):

Padmanabhan Ramalekshmi Thanu, D. (2011). USE OF DILUTE HYDROFLUORIC ACID AND DEEP EUTECTIC SOLVENT SYSTEMS FOR BACK END OF LINE CLEANING IN INTEGRATED CIRCUIT FABRICATION . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/202981

Chicago Manual of Style (16th Edition):

Padmanabhan Ramalekshmi Thanu, Dinesh. “USE OF DILUTE HYDROFLUORIC ACID AND DEEP EUTECTIC SOLVENT SYSTEMS FOR BACK END OF LINE CLEANING IN INTEGRATED CIRCUIT FABRICATION .” 2011. Doctoral Dissertation, University of Arizona. Accessed January 16, 2021. http://hdl.handle.net/10150/202981.

MLA Handbook (7th Edition):

Padmanabhan Ramalekshmi Thanu, Dinesh. “USE OF DILUTE HYDROFLUORIC ACID AND DEEP EUTECTIC SOLVENT SYSTEMS FOR BACK END OF LINE CLEANING IN INTEGRATED CIRCUIT FABRICATION .” 2011. Web. 16 Jan 2021.

Vancouver:

Padmanabhan Ramalekshmi Thanu D. USE OF DILUTE HYDROFLUORIC ACID AND DEEP EUTECTIC SOLVENT SYSTEMS FOR BACK END OF LINE CLEANING IN INTEGRATED CIRCUIT FABRICATION . [Internet] [Doctoral dissertation]. University of Arizona; 2011. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10150/202981.

Council of Science Editors:

Padmanabhan Ramalekshmi Thanu D. USE OF DILUTE HYDROFLUORIC ACID AND DEEP EUTECTIC SOLVENT SYSTEMS FOR BACK END OF LINE CLEANING IN INTEGRATED CIRCUIT FABRICATION . [Doctoral Dissertation]. University of Arizona; 2011. Available from: http://hdl.handle.net/10150/202981


Georgia Tech

2. Timmons, Christopher L. Fluorocarbon Post-Etch Residue Removal Using Radical Anion Chemistry.

Degree: PhD, Chemical Engineering, 2004, Georgia Tech

 During fabrication of integrated circuits, fluorocarbon plasma etching is used to pattern dielectric layers. As a byproduct of the process, a fluorocarbon residue is deposited… (more)

Subjects/Keywords: Radical anions; Fluorocarbon post-etch residue; Semiconductors Cleaning; Anions; Semiconductor wafers Cleaning

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APA (6th Edition):

Timmons, C. L. (2004). Fluorocarbon Post-Etch Residue Removal Using Radical Anion Chemistry. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/10583

Chicago Manual of Style (16th Edition):

Timmons, Christopher L. “Fluorocarbon Post-Etch Residue Removal Using Radical Anion Chemistry.” 2004. Doctoral Dissertation, Georgia Tech. Accessed January 16, 2021. http://hdl.handle.net/1853/10583.

MLA Handbook (7th Edition):

Timmons, Christopher L. “Fluorocarbon Post-Etch Residue Removal Using Radical Anion Chemistry.” 2004. Web. 16 Jan 2021.

Vancouver:

Timmons CL. Fluorocarbon Post-Etch Residue Removal Using Radical Anion Chemistry. [Internet] [Doctoral dissertation]. Georgia Tech; 2004. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1853/10583.

Council of Science Editors:

Timmons CL. Fluorocarbon Post-Etch Residue Removal Using Radical Anion Chemistry. [Doctoral Dissertation]. Georgia Tech; 2004. Available from: http://hdl.handle.net/1853/10583

3. Taubert, Jenny. Use of Formulations Based On Choline Chloride-Malonic Acid Deep Eutectic Solvent for Back End of Line Cleaning in Integrated Circuit Fabrication .

Degree: 2013, University of Arizona

 Interconnection layers fabricated during back end of line processing in semiconductor manufacturing involve dry etching of a low-k material and deposition of copper and metal… (more)

Subjects/Keywords: Characterization of Post Etch Residue; Deep Eutectic Solvents; Post Etch Residue Cleaning; Materials Science & Engineering; Back End of Line Cleaning

…APPENDIX A. POST ETCH RESIDUE REMOVAL USING CHOLINE CHLORIDEMALONIC ACID DEEP EUTECTIC SOLVENT… …cleaning formulation to remove predominantly inorganic post etch residue. This basic formulation… …x28;hydroxystyrene) (PHOST) backbone. Post etch residue of different chemical… …and ashing are followed by wet cleaning to remove any post etch residue. Figure 1.2 Copper… …systematic study of post etch residue formation during reactive ion plasma etching (RIE)… 

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APA (6th Edition):

Taubert, J. (2013). Use of Formulations Based On Choline Chloride-Malonic Acid Deep Eutectic Solvent for Back End of Line Cleaning in Integrated Circuit Fabrication . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/283692

Chicago Manual of Style (16th Edition):

Taubert, Jenny. “Use of Formulations Based On Choline Chloride-Malonic Acid Deep Eutectic Solvent for Back End of Line Cleaning in Integrated Circuit Fabrication .” 2013. Doctoral Dissertation, University of Arizona. Accessed January 16, 2021. http://hdl.handle.net/10150/283692.

MLA Handbook (7th Edition):

Taubert, Jenny. “Use of Formulations Based On Choline Chloride-Malonic Acid Deep Eutectic Solvent for Back End of Line Cleaning in Integrated Circuit Fabrication .” 2013. Web. 16 Jan 2021.

Vancouver:

Taubert J. Use of Formulations Based On Choline Chloride-Malonic Acid Deep Eutectic Solvent for Back End of Line Cleaning in Integrated Circuit Fabrication . [Internet] [Doctoral dissertation]. University of Arizona; 2013. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/10150/283692.

Council of Science Editors:

Taubert J. Use of Formulations Based On Choline Chloride-Malonic Acid Deep Eutectic Solvent for Back End of Line Cleaning in Integrated Circuit Fabrication . [Doctoral Dissertation]. University of Arizona; 2013. Available from: http://hdl.handle.net/10150/283692


Georgia Tech

4. Myneni, Satyanarayana. Post Plasma Etch Residue Removal Using Carbon Dioxide Based Fluids.

Degree: PhD, Chemical Engineering, 2004, Georgia Tech

 As feature sizes in semiconductor devices become smaller and newer materials are incorporated, current methods for photoresist and post plasma etch residue removal face several… (more)

Subjects/Keywords: Low-K; Angle resolved XPS; Surface cleaning; Supercritical carbon dioxide; ATR-FTIR; Fluorocarbon residue; Etch residue; Semiconductors Cleaning; Plasma etching; Liquid carbon dioxide Industrial applications

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Myneni, S. (2004). Post Plasma Etch Residue Removal Using Carbon Dioxide Based Fluids. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/7605

Chicago Manual of Style (16th Edition):

Myneni, Satyanarayana. “Post Plasma Etch Residue Removal Using Carbon Dioxide Based Fluids.” 2004. Doctoral Dissertation, Georgia Tech. Accessed January 16, 2021. http://hdl.handle.net/1853/7605.

MLA Handbook (7th Edition):

Myneni, Satyanarayana. “Post Plasma Etch Residue Removal Using Carbon Dioxide Based Fluids.” 2004. Web. 16 Jan 2021.

Vancouver:

Myneni S. Post Plasma Etch Residue Removal Using Carbon Dioxide Based Fluids. [Internet] [Doctoral dissertation]. Georgia Tech; 2004. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1853/7605.

Council of Science Editors:

Myneni S. Post Plasma Etch Residue Removal Using Carbon Dioxide Based Fluids. [Doctoral Dissertation]. Georgia Tech; 2004. Available from: http://hdl.handle.net/1853/7605


Georgia Tech

5. Song, Ingu. Role of carbon dioxide in gas expanded liquids for removal of photoresist and etch residue.

Degree: PhD, Chemical Engineering, 2007, Georgia Tech

 Progress in the microelectronics industry is driven by smaller and faster transistors. As feature sizes in integrated circuits become smaller and liquid chemical waste becomes… (more)

Subjects/Keywords: Etch residue; GXL; Photoresist; Gas expanded liquids; Carbon dioxide; Solvents; Carbon dioxide; Microelectronics industry; Sustainable engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Song, I. (2007). Role of carbon dioxide in gas expanded liquids for removal of photoresist and etch residue. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/26473

Chicago Manual of Style (16th Edition):

Song, Ingu. “Role of carbon dioxide in gas expanded liquids for removal of photoresist and etch residue.” 2007. Doctoral Dissertation, Georgia Tech. Accessed January 16, 2021. http://hdl.handle.net/1853/26473.

MLA Handbook (7th Edition):

Song, Ingu. “Role of carbon dioxide in gas expanded liquids for removal of photoresist and etch residue.” 2007. Web. 16 Jan 2021.

Vancouver:

Song I. Role of carbon dioxide in gas expanded liquids for removal of photoresist and etch residue. [Internet] [Doctoral dissertation]. Georgia Tech; 2007. [cited 2021 Jan 16]. Available from: http://hdl.handle.net/1853/26473.

Council of Science Editors:

Song I. Role of carbon dioxide in gas expanded liquids for removal of photoresist and etch residue. [Doctoral Dissertation]. Georgia Tech; 2007. Available from: http://hdl.handle.net/1853/26473

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