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You searched for subject:(Electronic Devices AND Semiconductor Manufacturing). Showing records 1 – 30 of 426 total matches.

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McMaster University

1. Logan, Dylan. Defect-enhanced Silicon Photodiodes for Photonic Integrated Circuits.

Degree: PhD, 2011, McMaster University

The continuous reduction of feature size in silicon-based electronic integrated circuits (ICs) is accompanied by devastating propagation delay time and power consumption that have… (more)

Subjects/Keywords: silicon photonics; photodiodes; semiconductor defects; optoelectronics; ring resonators; Electronic Devices and Semiconductor Manufacturing; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Logan, D. (2011). Defect-enhanced Silicon Photodiodes for Photonic Integrated Circuits. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/11117

Chicago Manual of Style (16th Edition):

Logan, Dylan. “Defect-enhanced Silicon Photodiodes for Photonic Integrated Circuits.” 2011. Doctoral Dissertation, McMaster University. Accessed February 24, 2020. http://hdl.handle.net/11375/11117.

MLA Handbook (7th Edition):

Logan, Dylan. “Defect-enhanced Silicon Photodiodes for Photonic Integrated Circuits.” 2011. Web. 24 Feb 2020.

Vancouver:

Logan D. Defect-enhanced Silicon Photodiodes for Photonic Integrated Circuits. [Internet] [Doctoral dissertation]. McMaster University; 2011. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/11375/11117.

Council of Science Editors:

Logan D. Defect-enhanced Silicon Photodiodes for Photonic Integrated Circuits. [Doctoral Dissertation]. McMaster University; 2011. Available from: http://hdl.handle.net/11375/11117


Boise State University

2. Nichol, Tyler. Study and Application of Second-Order Effects of Processing in Ge-Se Thin Films for Non-Conventional CBRAM Array Fabrication.

Degree: 2016, Boise State University

 This work presents the study of Ge-Se chalcogenide glasses that are used for production of arrays of Redox-Conductive-Bridge-Memory (RCBM) devices, a type of emerging non-volatile… (more)

Subjects/Keywords: Memristor; array; semiconductor fabrication; materials characterization; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Nichol, T. (2016). Study and Application of Second-Order Effects of Processing in Ge-Se Thin Films for Non-Conventional CBRAM Array Fabrication. (Thesis). Boise State University. Retrieved from https://scholarworks.boisestate.edu/td/1102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Nichol, Tyler. “Study and Application of Second-Order Effects of Processing in Ge-Se Thin Films for Non-Conventional CBRAM Array Fabrication.” 2016. Thesis, Boise State University. Accessed February 24, 2020. https://scholarworks.boisestate.edu/td/1102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Nichol, Tyler. “Study and Application of Second-Order Effects of Processing in Ge-Se Thin Films for Non-Conventional CBRAM Array Fabrication.” 2016. Web. 24 Feb 2020.

Vancouver:

Nichol T. Study and Application of Second-Order Effects of Processing in Ge-Se Thin Films for Non-Conventional CBRAM Array Fabrication. [Internet] [Thesis]. Boise State University; 2016. [cited 2020 Feb 24]. Available from: https://scholarworks.boisestate.edu/td/1102.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Nichol T. Study and Application of Second-Order Effects of Processing in Ge-Se Thin Films for Non-Conventional CBRAM Array Fabrication. [Thesis]. Boise State University; 2016. Available from: https://scholarworks.boisestate.edu/td/1102

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Arkansas

3. Ahmed, Shamim. Modeling and Validation of 4H-SiC Low Voltage MOSFETs for Integrated Circuit Design.

Degree: PhD, 2017, University of Arkansas

  Silicon Carbide is a promising wide bandgap material and gradually becoming the first choice of semiconductor for high density and high efficiency power electronics… (more)

Subjects/Keywords: Applied sciences; PMOS devices; SiC NMOS; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Ahmed, S. (2017). Modeling and Validation of 4H-SiC Low Voltage MOSFETs for Integrated Circuit Design. (Doctoral Dissertation). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/1945

Chicago Manual of Style (16th Edition):

Ahmed, Shamim. “Modeling and Validation of 4H-SiC Low Voltage MOSFETs for Integrated Circuit Design.” 2017. Doctoral Dissertation, University of Arkansas. Accessed February 24, 2020. https://scholarworks.uark.edu/etd/1945.

MLA Handbook (7th Edition):

Ahmed, Shamim. “Modeling and Validation of 4H-SiC Low Voltage MOSFETs for Integrated Circuit Design.” 2017. Web. 24 Feb 2020.

Vancouver:

Ahmed S. Modeling and Validation of 4H-SiC Low Voltage MOSFETs for Integrated Circuit Design. [Internet] [Doctoral dissertation]. University of Arkansas; 2017. [cited 2020 Feb 24]. Available from: https://scholarworks.uark.edu/etd/1945.

Council of Science Editors:

Ahmed S. Modeling and Validation of 4H-SiC Low Voltage MOSFETs for Integrated Circuit Design. [Doctoral Dissertation]. University of Arkansas; 2017. Available from: https://scholarworks.uark.edu/etd/1945


McMaster University

4. Jewell, Nikolaus A. Reactive Magnetron Sputtering as a Growth Alternative for Gallium Nitride Nanowires.

Degree: MASc, 2014, McMaster University

Gallium nitride (GaN) nanowires are high-performance materials with wide, direct bandgaps and superior electronic properties. Although their properties make them of great interest for… (more)

Subjects/Keywords: gallium nitride; nanowires; sputtering; Electronic Devices and Semiconductor Manufacturing; Nanoscience and Nanotechnology; Nanotechnology fabrication; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Jewell, N. A. (2014). Reactive Magnetron Sputtering as a Growth Alternative for Gallium Nitride Nanowires. (Masters Thesis). McMaster University. Retrieved from http://hdl.handle.net/11375/14122

Chicago Manual of Style (16th Edition):

Jewell, Nikolaus A. “Reactive Magnetron Sputtering as a Growth Alternative for Gallium Nitride Nanowires.” 2014. Masters Thesis, McMaster University. Accessed February 24, 2020. http://hdl.handle.net/11375/14122.

MLA Handbook (7th Edition):

Jewell, Nikolaus A. “Reactive Magnetron Sputtering as a Growth Alternative for Gallium Nitride Nanowires.” 2014. Web. 24 Feb 2020.

Vancouver:

Jewell NA. Reactive Magnetron Sputtering as a Growth Alternative for Gallium Nitride Nanowires. [Internet] [Masters thesis]. McMaster University; 2014. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/11375/14122.

Council of Science Editors:

Jewell NA. Reactive Magnetron Sputtering as a Growth Alternative for Gallium Nitride Nanowires. [Masters Thesis]. McMaster University; 2014. Available from: http://hdl.handle.net/11375/14122

5. Pokharel, Jyotshna. Improving Conductivity of Solution Based Zinc Oxide Thin Film Electrode Using Plasma for Optoelectronic Devices.

Degree: MS, Electrical Engineering and Computer Science, 2015, South Dakota State University

  Transparent conductive oxides used in solar cells such as indium tin oxide are relatively expensive. Zinc oxide may be suitable alternative as it is… (more)

Subjects/Keywords: Electrical and Computer Engineering; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Pokharel, J. (2015). Improving Conductivity of Solution Based Zinc Oxide Thin Film Electrode Using Plasma for Optoelectronic Devices. (Masters Thesis). South Dakota State University. Retrieved from http://openprairie.sdstate.edu/etd/1772

Chicago Manual of Style (16th Edition):

Pokharel, Jyotshna. “Improving Conductivity of Solution Based Zinc Oxide Thin Film Electrode Using Plasma for Optoelectronic Devices.” 2015. Masters Thesis, South Dakota State University. Accessed February 24, 2020. http://openprairie.sdstate.edu/etd/1772.

MLA Handbook (7th Edition):

Pokharel, Jyotshna. “Improving Conductivity of Solution Based Zinc Oxide Thin Film Electrode Using Plasma for Optoelectronic Devices.” 2015. Web. 24 Feb 2020.

Vancouver:

Pokharel J. Improving Conductivity of Solution Based Zinc Oxide Thin Film Electrode Using Plasma for Optoelectronic Devices. [Internet] [Masters thesis]. South Dakota State University; 2015. [cited 2020 Feb 24]. Available from: http://openprairie.sdstate.edu/etd/1772.

Council of Science Editors:

Pokharel J. Improving Conductivity of Solution Based Zinc Oxide Thin Film Electrode Using Plasma for Optoelectronic Devices. [Masters Thesis]. South Dakota State University; 2015. Available from: http://openprairie.sdstate.edu/etd/1772


Boise State University

6. Southwick, Richard G., III. An Investigation of Carrier Transport in Hafnium Oxide/Silicon Dioxide MOS Gate Dielectric Stacks from 5.6-400K.

Degree: 2010, Boise State University

 Hafnium oxide (HfO2) is replacing silicon dioxide (SiO2) as the gate dielectric in metal oxide semiconductor (MOS) structures driven mainly by need to reduce high… (more)

Subjects/Keywords: hafnium oxide; cryogenic; transport; MOS; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Southwick, Richard G., I. (2010). An Investigation of Carrier Transport in Hafnium Oxide/Silicon Dioxide MOS Gate Dielectric Stacks from 5.6-400K. (Thesis). Boise State University. Retrieved from https://scholarworks.boisestate.edu/td/149

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Southwick, Richard G., III. “An Investigation of Carrier Transport in Hafnium Oxide/Silicon Dioxide MOS Gate Dielectric Stacks from 5.6-400K.” 2010. Thesis, Boise State University. Accessed February 24, 2020. https://scholarworks.boisestate.edu/td/149.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Southwick, Richard G., III. “An Investigation of Carrier Transport in Hafnium Oxide/Silicon Dioxide MOS Gate Dielectric Stacks from 5.6-400K.” 2010. Web. 24 Feb 2020.

Vancouver:

Southwick, Richard G. I. An Investigation of Carrier Transport in Hafnium Oxide/Silicon Dioxide MOS Gate Dielectric Stacks from 5.6-400K. [Internet] [Thesis]. Boise State University; 2010. [cited 2020 Feb 24]. Available from: https://scholarworks.boisestate.edu/td/149.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Southwick, Richard G. I. An Investigation of Carrier Transport in Hafnium Oxide/Silicon Dioxide MOS Gate Dielectric Stacks from 5.6-400K. [Thesis]. Boise State University; 2010. Available from: https://scholarworks.boisestate.edu/td/149

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Boise State University

7. VanAckern, Gary. Design Guide for CMOS Process On-Chip 3D Inductor using Thru-Wafer Vias.

Degree: 2011, Boise State University

 Three-dimensional (3D) inductors using high aspect ratio (10:1) thru-wafer via (TWV) technology in a complementary metal oxide semiconductor (CMOS) process have been designed, fabricated, and… (more)

Subjects/Keywords: 3D; Inductor; Via; Thru-Wafer; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

VanAckern, G. (2011). Design Guide for CMOS Process On-Chip 3D Inductor using Thru-Wafer Vias. (Thesis). Boise State University. Retrieved from https://scholarworks.boisestate.edu/td/173

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

VanAckern, Gary. “Design Guide for CMOS Process On-Chip 3D Inductor using Thru-Wafer Vias.” 2011. Thesis, Boise State University. Accessed February 24, 2020. https://scholarworks.boisestate.edu/td/173.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

VanAckern, Gary. “Design Guide for CMOS Process On-Chip 3D Inductor using Thru-Wafer Vias.” 2011. Web. 24 Feb 2020.

Vancouver:

VanAckern G. Design Guide for CMOS Process On-Chip 3D Inductor using Thru-Wafer Vias. [Internet] [Thesis]. Boise State University; 2011. [cited 2020 Feb 24]. Available from: https://scholarworks.boisestate.edu/td/173.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

VanAckern G. Design Guide for CMOS Process On-Chip 3D Inductor using Thru-Wafer Vias. [Thesis]. Boise State University; 2011. Available from: https://scholarworks.boisestate.edu/td/173

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Arkansas

8. Pham, Thach. Si-based Germanium Tin Photodetectors for Short-Wave and Mid-Wave Infrared Detections.

Degree: PhD, 2018, University of Arkansas

  The demand of light-weight and inexpensive imaging system working in the infrared range keeps increasing for the last decade, especially for civil applications. Although… (more)

Subjects/Keywords: Germanium Tin; Infrared Photodetector; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Pham, T. (2018). Si-based Germanium Tin Photodetectors for Short-Wave and Mid-Wave Infrared Detections. (Doctoral Dissertation). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/2838

Chicago Manual of Style (16th Edition):

Pham, Thach. “Si-based Germanium Tin Photodetectors for Short-Wave and Mid-Wave Infrared Detections.” 2018. Doctoral Dissertation, University of Arkansas. Accessed February 24, 2020. https://scholarworks.uark.edu/etd/2838.

MLA Handbook (7th Edition):

Pham, Thach. “Si-based Germanium Tin Photodetectors for Short-Wave and Mid-Wave Infrared Detections.” 2018. Web. 24 Feb 2020.

Vancouver:

Pham T. Si-based Germanium Tin Photodetectors for Short-Wave and Mid-Wave Infrared Detections. [Internet] [Doctoral dissertation]. University of Arkansas; 2018. [cited 2020 Feb 24]. Available from: https://scholarworks.uark.edu/etd/2838.

Council of Science Editors:

Pham T. Si-based Germanium Tin Photodetectors for Short-Wave and Mid-Wave Infrared Detections. [Doctoral Dissertation]. University of Arkansas; 2018. Available from: https://scholarworks.uark.edu/etd/2838


University of Arkansas

9. Hironaka, Takayuki. Exfoliation, Synthesis, and Characterization of Nanoscale Te.

Degree: MSEE, 2018, University of Arkansas

  Since the experimental discovery of graphene, two dimensional materials have enjoyed more attention and emphasis in academic research than nanowires, but the latter are… (more)

Subjects/Keywords: Electron Transport; Nanowire; Tellurium; Electronic Devices and Semiconductor Manufacturing; Engineering Physics

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APA (6th Edition):

Hironaka, T. (2018). Exfoliation, Synthesis, and Characterization of Nanoscale Te. (Masters Thesis). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/3086

Chicago Manual of Style (16th Edition):

Hironaka, Takayuki. “Exfoliation, Synthesis, and Characterization of Nanoscale Te.” 2018. Masters Thesis, University of Arkansas. Accessed February 24, 2020. https://scholarworks.uark.edu/etd/3086.

MLA Handbook (7th Edition):

Hironaka, Takayuki. “Exfoliation, Synthesis, and Characterization of Nanoscale Te.” 2018. Web. 24 Feb 2020.

Vancouver:

Hironaka T. Exfoliation, Synthesis, and Characterization of Nanoscale Te. [Internet] [Masters thesis]. University of Arkansas; 2018. [cited 2020 Feb 24]. Available from: https://scholarworks.uark.edu/etd/3086.

Council of Science Editors:

Hironaka T. Exfoliation, Synthesis, and Characterization of Nanoscale Te. [Masters Thesis]. University of Arkansas; 2018. Available from: https://scholarworks.uark.edu/etd/3086


University of Arkansas

10. Venkatesan Gomathy, Manikandan. Development of an Oxygen Saturation Monitoring System by Embedded Electronics.

Degree: MSEE, 2017, University of Arkansas

  Measuring Oxygenation of blood (SaO2) plays a vital role in patient’s health monitoring. This is often measured by pulse oximeter, which is standard measure… (more)

Subjects/Keywords: Applied sciences; Electrical engineering; Biomedical; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Venkatesan Gomathy, M. (2017). Development of an Oxygen Saturation Monitoring System by Embedded Electronics. (Masters Thesis). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/1944

Chicago Manual of Style (16th Edition):

Venkatesan Gomathy, Manikandan. “Development of an Oxygen Saturation Monitoring System by Embedded Electronics.” 2017. Masters Thesis, University of Arkansas. Accessed February 24, 2020. https://scholarworks.uark.edu/etd/1944.

MLA Handbook (7th Edition):

Venkatesan Gomathy, Manikandan. “Development of an Oxygen Saturation Monitoring System by Embedded Electronics.” 2017. Web. 24 Feb 2020.

Vancouver:

Venkatesan Gomathy M. Development of an Oxygen Saturation Monitoring System by Embedded Electronics. [Internet] [Masters thesis]. University of Arkansas; 2017. [cited 2020 Feb 24]. Available from: https://scholarworks.uark.edu/etd/1944.

Council of Science Editors:

Venkatesan Gomathy M. Development of an Oxygen Saturation Monitoring System by Embedded Electronics. [Masters Thesis]. University of Arkansas; 2017. Available from: https://scholarworks.uark.edu/etd/1944


Cal Poly

11. Sodipe, Olukayode O. Wide-band Gap Devices for DC Breaker Applications.

Degree: MS, Electrical Engineering, 2016, Cal Poly

  With the increasing interest in wide-band gap devices, their potential benefits in power applications have been studied and explored with numerous studies conducted for… (more)

Subjects/Keywords: Electrical and Electronics; Electronic Devices and Semiconductor Manufacturing; Power and Energy

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APA (6th Edition):

Sodipe, O. O. (2016). Wide-band Gap Devices for DC Breaker Applications. (Masters Thesis). Cal Poly. Retrieved from https://digitalcommons.calpoly.edu/theses/1529 ; 10.15368/theses.2016.2

Chicago Manual of Style (16th Edition):

Sodipe, Olukayode O. “Wide-band Gap Devices for DC Breaker Applications.” 2016. Masters Thesis, Cal Poly. Accessed February 24, 2020. https://digitalcommons.calpoly.edu/theses/1529 ; 10.15368/theses.2016.2.

MLA Handbook (7th Edition):

Sodipe, Olukayode O. “Wide-band Gap Devices for DC Breaker Applications.” 2016. Web. 24 Feb 2020.

Vancouver:

Sodipe OO. Wide-band Gap Devices for DC Breaker Applications. [Internet] [Masters thesis]. Cal Poly; 2016. [cited 2020 Feb 24]. Available from: https://digitalcommons.calpoly.edu/theses/1529 ; 10.15368/theses.2016.2.

Council of Science Editors:

Sodipe OO. Wide-band Gap Devices for DC Breaker Applications. [Masters Thesis]. Cal Poly; 2016. Available from: https://digitalcommons.calpoly.edu/theses/1529 ; 10.15368/theses.2016.2


Virginia Commonwealth University

12. Okur, Serdal. Optical characterization of InGaN heterostructures for blue light emitters and vertical cavity lasers: Efficiency and recombination dynamics.

Degree: PhD, Engineering, 2014, Virginia Commonwealth University

  OPTICAL CHARACTERIZATION OF INGAN HETEROSTRUCTURES FOR BLUE LIGHT EMITTERS AND VERTICAL CAVITY LASERS: EFFICIENCY AND RECOMBINATION DYNAMICS By Serdal Okur, Ph.D. A thesis submitted… (more)

Subjects/Keywords: GaN; LED; VCSEL; InGaN; heterostructures; photoluminescence; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Okur, S. (2014). Optical characterization of InGaN heterostructures for blue light emitters and vertical cavity lasers: Efficiency and recombination dynamics. (Doctoral Dissertation). Virginia Commonwealth University. Retrieved from https://doi.org/10.25772/D78Q-J751 ; https://scholarscompass.vcu.edu/etd/3647

Chicago Manual of Style (16th Edition):

Okur, Serdal. “Optical characterization of InGaN heterostructures for blue light emitters and vertical cavity lasers: Efficiency and recombination dynamics.” 2014. Doctoral Dissertation, Virginia Commonwealth University. Accessed February 24, 2020. https://doi.org/10.25772/D78Q-J751 ; https://scholarscompass.vcu.edu/etd/3647.

MLA Handbook (7th Edition):

Okur, Serdal. “Optical characterization of InGaN heterostructures for blue light emitters and vertical cavity lasers: Efficiency and recombination dynamics.” 2014. Web. 24 Feb 2020.

Vancouver:

Okur S. Optical characterization of InGaN heterostructures for blue light emitters and vertical cavity lasers: Efficiency and recombination dynamics. [Internet] [Doctoral dissertation]. Virginia Commonwealth University; 2014. [cited 2020 Feb 24]. Available from: https://doi.org/10.25772/D78Q-J751 ; https://scholarscompass.vcu.edu/etd/3647.

Council of Science Editors:

Okur S. Optical characterization of InGaN heterostructures for blue light emitters and vertical cavity lasers: Efficiency and recombination dynamics. [Doctoral Dissertation]. Virginia Commonwealth University; 2014. Available from: https://doi.org/10.25772/D78Q-J751 ; https://scholarscompass.vcu.edu/etd/3647


University of Arkansas

13. Brooks, Staci E. Modeling and Simulation of 1700 V 8 A GeneSiC Superjunction Transistor.

Degree: MS, 2016, University of Arkansas

  The first-ever 1.7kV 8A SiC physics-based compact SPICE model is developed for behavior prediction, modeling and simulation of the GeneSiC “Super” Junction Transistor. The… (more)

Subjects/Keywords: Applied sciences; Modeling; Semiconductor device; Simulation; Electromagnetics and Photonics; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Brooks, S. E. (2016). Modeling and Simulation of 1700 V 8 A GeneSiC Superjunction Transistor. (Masters Thesis). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/1740

Chicago Manual of Style (16th Edition):

Brooks, Staci E. “Modeling and Simulation of 1700 V 8 A GeneSiC Superjunction Transistor.” 2016. Masters Thesis, University of Arkansas. Accessed February 24, 2020. https://scholarworks.uark.edu/etd/1740.

MLA Handbook (7th Edition):

Brooks, Staci E. “Modeling and Simulation of 1700 V 8 A GeneSiC Superjunction Transistor.” 2016. Web. 24 Feb 2020.

Vancouver:

Brooks SE. Modeling and Simulation of 1700 V 8 A GeneSiC Superjunction Transistor. [Internet] [Masters thesis]. University of Arkansas; 2016. [cited 2020 Feb 24]. Available from: https://scholarworks.uark.edu/etd/1740.

Council of Science Editors:

Brooks SE. Modeling and Simulation of 1700 V 8 A GeneSiC Superjunction Transistor. [Masters Thesis]. University of Arkansas; 2016. Available from: https://scholarworks.uark.edu/etd/1740


University of Arkansas

14. Morris, Haley Ann. Investigation of the Optical Properties of PbSe/PbX Nanocrystals for Photodetector Applications.

Degree: MS, 2016, University of Arkansas

  Lead selenide and lead selenide/lead sulfide core/shell nanocrystals were investigated for use in near infrared photodetectors. A colloidal synthesis method was used for both… (more)

Subjects/Keywords: Applied sciences; Electromagnetics and Photonics; Electronic Devices and Semiconductor Manufacturing; Semiconductor and Optical Materials

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APA (6th Edition):

Morris, H. A. (2016). Investigation of the Optical Properties of PbSe/PbX Nanocrystals for Photodetector Applications. (Masters Thesis). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/1828

Chicago Manual of Style (16th Edition):

Morris, Haley Ann. “Investigation of the Optical Properties of PbSe/PbX Nanocrystals for Photodetector Applications.” 2016. Masters Thesis, University of Arkansas. Accessed February 24, 2020. https://scholarworks.uark.edu/etd/1828.

MLA Handbook (7th Edition):

Morris, Haley Ann. “Investigation of the Optical Properties of PbSe/PbX Nanocrystals for Photodetector Applications.” 2016. Web. 24 Feb 2020.

Vancouver:

Morris HA. Investigation of the Optical Properties of PbSe/PbX Nanocrystals for Photodetector Applications. [Internet] [Masters thesis]. University of Arkansas; 2016. [cited 2020 Feb 24]. Available from: https://scholarworks.uark.edu/etd/1828.

Council of Science Editors:

Morris HA. Investigation of the Optical Properties of PbSe/PbX Nanocrystals for Photodetector Applications. [Masters Thesis]. University of Arkansas; 2016. Available from: https://scholarworks.uark.edu/etd/1828


University of Arkansas

15. Grant, Perry Christian. GeSn Thin Film Epitaxy and Quantum Wells for Optoelectronic Devices.

Degree: PhD, 2018, University of Arkansas

  Group IV photonics is an effort to generate viable infrared optoelectronic devices using group IV materials. Si-based optoelectronics have received monumental research since Si… (more)

Subjects/Keywords: CVD; GeSn; Growth; Quantum Wells; Semiconductor; Electronic Devices and Semiconductor Manufacturing; Nanoscience and Nanotechnology

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APA (6th Edition):

Grant, P. C. (2018). GeSn Thin Film Epitaxy and Quantum Wells for Optoelectronic Devices. (Doctoral Dissertation). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/3096

Chicago Manual of Style (16th Edition):

Grant, Perry Christian. “GeSn Thin Film Epitaxy and Quantum Wells for Optoelectronic Devices.” 2018. Doctoral Dissertation, University of Arkansas. Accessed February 24, 2020. https://scholarworks.uark.edu/etd/3096.

MLA Handbook (7th Edition):

Grant, Perry Christian. “GeSn Thin Film Epitaxy and Quantum Wells for Optoelectronic Devices.” 2018. Web. 24 Feb 2020.

Vancouver:

Grant PC. GeSn Thin Film Epitaxy and Quantum Wells for Optoelectronic Devices. [Internet] [Doctoral dissertation]. University of Arkansas; 2018. [cited 2020 Feb 24]. Available from: https://scholarworks.uark.edu/etd/3096.

Council of Science Editors:

Grant PC. GeSn Thin Film Epitaxy and Quantum Wells for Optoelectronic Devices. [Doctoral Dissertation]. University of Arkansas; 2018. Available from: https://scholarworks.uark.edu/etd/3096


University of Arkansas

16. Al-Kabi, Sattar H. Sweilim. Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications.

Degree: PhD, 2017, University of Arkansas

  Silicon-based materials and optoelectronic devices are of great interest as they could be monolithically integrated in the current Si complementary metal-oxide-semiconductor (CMOS) processes. The… (more)

Subjects/Keywords: GeSn; Lasers; Optoelectronics; Photonics; Semiconductor; Electromagnetics and Photonics; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Al-Kabi, S. H. S. (2017). Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications. (Doctoral Dissertation). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/2505

Chicago Manual of Style (16th Edition):

Al-Kabi, Sattar H Sweilim. “Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications.” 2017. Doctoral Dissertation, University of Arkansas. Accessed February 24, 2020. https://scholarworks.uark.edu/etd/2505.

MLA Handbook (7th Edition):

Al-Kabi, Sattar H Sweilim. “Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications.” 2017. Web. 24 Feb 2020.

Vancouver:

Al-Kabi SHS. Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications. [Internet] [Doctoral dissertation]. University of Arkansas; 2017. [cited 2020 Feb 24]. Available from: https://scholarworks.uark.edu/etd/2505.

Council of Science Editors:

Al-Kabi SHS. Si-Based Germanium Tin Semiconductor Lasers for Optoelectronic Applications. [Doctoral Dissertation]. University of Arkansas; 2017. Available from: https://scholarworks.uark.edu/etd/2505


McMaster University

17. SAHA, SUDIP K. Different Approaches to Improve Metamorphic Buffer Layers Grown on a GaAs Substrate.

Degree: MASc, 2012, McMaster University

Metamorphic buffer (MB) layers were studied as a means to grow epilayers on top of a GaAs substrate which have different lattice constant than… (more)

Subjects/Keywords: Metamorphic Buffer Layers; Pseudo-substrate; GaAs; Cross-hatch; Low temperature layer; InGaAs; InGaAsP; Electronic Devices and Semiconductor Manufacturing; Semiconductor and Optical Materials; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

SAHA, S. K. (2012). Different Approaches to Improve Metamorphic Buffer Layers Grown on a GaAs Substrate. (Masters Thesis). McMaster University. Retrieved from http://hdl.handle.net/11375/12590

Chicago Manual of Style (16th Edition):

SAHA, SUDIP K. “Different Approaches to Improve Metamorphic Buffer Layers Grown on a GaAs Substrate.” 2012. Masters Thesis, McMaster University. Accessed February 24, 2020. http://hdl.handle.net/11375/12590.

MLA Handbook (7th Edition):

SAHA, SUDIP K. “Different Approaches to Improve Metamorphic Buffer Layers Grown on a GaAs Substrate.” 2012. Web. 24 Feb 2020.

Vancouver:

SAHA SK. Different Approaches to Improve Metamorphic Buffer Layers Grown on a GaAs Substrate. [Internet] [Masters thesis]. McMaster University; 2012. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/11375/12590.

Council of Science Editors:

SAHA SK. Different Approaches to Improve Metamorphic Buffer Layers Grown on a GaAs Substrate. [Masters Thesis]. McMaster University; 2012. Available from: http://hdl.handle.net/11375/12590


McMaster University

18. Boulanger, Jonathan P. Unveiling Transient Behaviors in Heterostructure Nanowires.

Degree: PhD, 2013, McMaster University

GaAs/GaP heterostructure nanowires (NWs) were grown on GaAs(111)B and Si(111) substrates by gold (Au) assisted vapor-liquid-solid (VLS) growth in a molecular beam epitaxy (MBE)… (more)

Subjects/Keywords: nanowire; epitaxy; electron microscopy; III-V semiconductors; vapor liquid solid; heterostructures; Electronic Devices and Semiconductor Manufacturing; Nanoscience and Nanotechnology; Nanotechnology fabrication; Semiconductor and Optical Materials; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Boulanger, J. P. (2013). Unveiling Transient Behaviors in Heterostructure Nanowires. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/13480

Chicago Manual of Style (16th Edition):

Boulanger, Jonathan P. “Unveiling Transient Behaviors in Heterostructure Nanowires.” 2013. Doctoral Dissertation, McMaster University. Accessed February 24, 2020. http://hdl.handle.net/11375/13480.

MLA Handbook (7th Edition):

Boulanger, Jonathan P. “Unveiling Transient Behaviors in Heterostructure Nanowires.” 2013. Web. 24 Feb 2020.

Vancouver:

Boulanger JP. Unveiling Transient Behaviors in Heterostructure Nanowires. [Internet] [Doctoral dissertation]. McMaster University; 2013. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/11375/13480.

Council of Science Editors:

Boulanger JP. Unveiling Transient Behaviors in Heterostructure Nanowires. [Doctoral Dissertation]. McMaster University; 2013. Available from: http://hdl.handle.net/11375/13480


McMaster University

19. Devenyi, Gabriel A. An Investigation into the Role of Energy and Symmetry at Epitaxial Interfaces.

Degree: PhD, 2013, McMaster University

Epitaxy is a key technological process for the production of thin films and nanostructures for electronic and optoelectronic devices. The epitaxial process has been… (more)

Subjects/Keywords: epitaxy; thin films; symmetry; growth; MBE; interface; Electronic Devices and Semiconductor Manufacturing; Nanoscience and Nanotechnology; Nanotechnology fabrication; Semiconductor and Optical Materials; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Devenyi, G. A. (2013). An Investigation into the Role of Energy and Symmetry at Epitaxial Interfaces. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/13788

Chicago Manual of Style (16th Edition):

Devenyi, Gabriel A. “An Investigation into the Role of Energy and Symmetry at Epitaxial Interfaces.” 2013. Doctoral Dissertation, McMaster University. Accessed February 24, 2020. http://hdl.handle.net/11375/13788.

MLA Handbook (7th Edition):

Devenyi, Gabriel A. “An Investigation into the Role of Energy and Symmetry at Epitaxial Interfaces.” 2013. Web. 24 Feb 2020.

Vancouver:

Devenyi GA. An Investigation into the Role of Energy and Symmetry at Epitaxial Interfaces. [Internet] [Doctoral dissertation]. McMaster University; 2013. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/11375/13788.

Council of Science Editors:

Devenyi GA. An Investigation into the Role of Energy and Symmetry at Epitaxial Interfaces. [Doctoral Dissertation]. McMaster University; 2013. Available from: http://hdl.handle.net/11375/13788


University of Arkansas

20. Saadeh, Osama Shihadeh. Modeling and Characterization of P-Type Silicon Carbide Gate Turn off Thyristors.

Degree: PhD, 2011, University of Arkansas

  Silicon carbide (SiC) power semiconductor devices have emerged in the past decade as the most promising technology for next generation power electronic applications ranging… (more)

Subjects/Keywords: Applied sciences; Gate turn off; Power electronics; Power semiconductor devices; Silicon carbide; Thyristors; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Saadeh, O. S. (2011). Modeling and Characterization of P-Type Silicon Carbide Gate Turn off Thyristors. (Doctoral Dissertation). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/241

Chicago Manual of Style (16th Edition):

Saadeh, Osama Shihadeh. “Modeling and Characterization of P-Type Silicon Carbide Gate Turn off Thyristors.” 2011. Doctoral Dissertation, University of Arkansas. Accessed February 24, 2020. https://scholarworks.uark.edu/etd/241.

MLA Handbook (7th Edition):

Saadeh, Osama Shihadeh. “Modeling and Characterization of P-Type Silicon Carbide Gate Turn off Thyristors.” 2011. Web. 24 Feb 2020.

Vancouver:

Saadeh OS. Modeling and Characterization of P-Type Silicon Carbide Gate Turn off Thyristors. [Internet] [Doctoral dissertation]. University of Arkansas; 2011. [cited 2020 Feb 24]. Available from: https://scholarworks.uark.edu/etd/241.

Council of Science Editors:

Saadeh OS. Modeling and Characterization of P-Type Silicon Carbide Gate Turn off Thyristors. [Doctoral Dissertation]. University of Arkansas; 2011. Available from: https://scholarworks.uark.edu/etd/241


University of Arkansas

21. Wang, Shijie. Electrical Design Considerations and Packaging of Power Electronic Modules.

Degree: MSEE, 2013, University of Arkansas

  A modern power electronic module can save significant energy usage in the power electronic systems by improving their switching efficiencies. One way to improve… (more)

Subjects/Keywords: Applied sciences; Parasitic inductance; Power electronics; Power module; Semiconductor devices; Electrical and Electronics; Electronic Devices and Semiconductor Manufacturing; Power and Energy

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APA (6th Edition):

Wang, S. (2013). Electrical Design Considerations and Packaging of Power Electronic Modules. (Masters Thesis). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/858

Chicago Manual of Style (16th Edition):

Wang, Shijie. “Electrical Design Considerations and Packaging of Power Electronic Modules.” 2013. Masters Thesis, University of Arkansas. Accessed February 24, 2020. https://scholarworks.uark.edu/etd/858.

MLA Handbook (7th Edition):

Wang, Shijie. “Electrical Design Considerations and Packaging of Power Electronic Modules.” 2013. Web. 24 Feb 2020.

Vancouver:

Wang S. Electrical Design Considerations and Packaging of Power Electronic Modules. [Internet] [Masters thesis]. University of Arkansas; 2013. [cited 2020 Feb 24]. Available from: https://scholarworks.uark.edu/etd/858.

Council of Science Editors:

Wang S. Electrical Design Considerations and Packaging of Power Electronic Modules. [Masters Thesis]. University of Arkansas; 2013. Available from: https://scholarworks.uark.edu/etd/858


McMaster University

22. Feng, Cong. Experimental Study of DKPP-βT Polymeric Thin Film Transistor.

Degree: MASc, 2012, McMaster University

In the last 30 years, the possibility of using polymeric thin film transistors (PTFTs) in flexible display, sensors, radio-frequency identification tag and the potential… (more)

Subjects/Keywords: polymeric thin film transistors (PTFTs); diketopyrrolopyrrole β-unsubstituted quaterthiophene (DKPP-βT); microfluidic PTFTs; stability; sensor; characterization techniques; Electronic Devices and Semiconductor Manufacturing; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Feng, C. (2012). Experimental Study of DKPP-βT Polymeric Thin Film Transistor. (Masters Thesis). McMaster University. Retrieved from http://hdl.handle.net/11375/12757

Chicago Manual of Style (16th Edition):

Feng, Cong. “Experimental Study of DKPP-βT Polymeric Thin Film Transistor.” 2012. Masters Thesis, McMaster University. Accessed February 24, 2020. http://hdl.handle.net/11375/12757.

MLA Handbook (7th Edition):

Feng, Cong. “Experimental Study of DKPP-βT Polymeric Thin Film Transistor.” 2012. Web. 24 Feb 2020.

Vancouver:

Feng C. Experimental Study of DKPP-βT Polymeric Thin Film Transistor. [Internet] [Masters thesis]. McMaster University; 2012. [cited 2020 Feb 24]. Available from: http://hdl.handle.net/11375/12757.

Council of Science Editors:

Feng C. Experimental Study of DKPP-βT Polymeric Thin Film Transistor. [Masters Thesis]. McMaster University; 2012. Available from: http://hdl.handle.net/11375/12757


University of Louisville

23. Ratnayake, Dilan. Strategies and techniques for fabricating MEMS bistable thermal actuators.

Degree: PhD, 2016, University of Louisville

  Bistable elements are beginning to appear in the field of MEMS as they allow engineers to design sensors and actuators which require no electrical… (more)

Subjects/Keywords: MEMS; bistable; buckling; 3D; stress; actuator; Electronic Devices and Semiconductor Manufacturing; Nanotechnology Fabrication

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APA (6th Edition):

Ratnayake, D. (2016). Strategies and techniques for fabricating MEMS bistable thermal actuators. (Doctoral Dissertation). University of Louisville. Retrieved from 10.18297/etd/2586 ; https://ir.library.louisville.edu/etd/2586

Chicago Manual of Style (16th Edition):

Ratnayake, Dilan. “Strategies and techniques for fabricating MEMS bistable thermal actuators.” 2016. Doctoral Dissertation, University of Louisville. Accessed February 24, 2020. 10.18297/etd/2586 ; https://ir.library.louisville.edu/etd/2586.

MLA Handbook (7th Edition):

Ratnayake, Dilan. “Strategies and techniques for fabricating MEMS bistable thermal actuators.” 2016. Web. 24 Feb 2020.

Vancouver:

Ratnayake D. Strategies and techniques for fabricating MEMS bistable thermal actuators. [Internet] [Doctoral dissertation]. University of Louisville; 2016. [cited 2020 Feb 24]. Available from: 10.18297/etd/2586 ; https://ir.library.louisville.edu/etd/2586.

Council of Science Editors:

Ratnayake D. Strategies and techniques for fabricating MEMS bistable thermal actuators. [Doctoral Dissertation]. University of Louisville; 2016. Available from: 10.18297/etd/2586 ; https://ir.library.louisville.edu/etd/2586


University of New Mexico

24. Hackett, Shawn W. High Power Optically Pumped Semiconductor Lasers for Sodium Guidestar Applications.

Degree: Optical Science and Engineering, 2016, University of New Mexico

  Optically pumped semiconductor lasers (OPSLs) are shown to provide a much more compact and less expensive source for illumination of the sodium layer of… (more)

Subjects/Keywords: Electronic Devices and Semiconductor Manufacturing; Instrumentation; Other Astrophysics and Astronomy; Other Engineering

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APA (6th Edition):

Hackett, S. W. (2016). High Power Optically Pumped Semiconductor Lasers for Sodium Guidestar Applications. (Doctoral Dissertation). University of New Mexico. Retrieved from https://digitalrepository.unm.edu/ose_etds/54

Chicago Manual of Style (16th Edition):

Hackett, Shawn W. “High Power Optically Pumped Semiconductor Lasers for Sodium Guidestar Applications.” 2016. Doctoral Dissertation, University of New Mexico. Accessed February 24, 2020. https://digitalrepository.unm.edu/ose_etds/54.

MLA Handbook (7th Edition):

Hackett, Shawn W. “High Power Optically Pumped Semiconductor Lasers for Sodium Guidestar Applications.” 2016. Web. 24 Feb 2020.

Vancouver:

Hackett SW. High Power Optically Pumped Semiconductor Lasers for Sodium Guidestar Applications. [Internet] [Doctoral dissertation]. University of New Mexico; 2016. [cited 2020 Feb 24]. Available from: https://digitalrepository.unm.edu/ose_etds/54.

Council of Science Editors:

Hackett SW. High Power Optically Pumped Semiconductor Lasers for Sodium Guidestar Applications. [Doctoral Dissertation]. University of New Mexico; 2016. Available from: https://digitalrepository.unm.edu/ose_etds/54


University of New Mexico

25. Cowan, Vincent M. Measurement and Analysis of III-V & II-VI Infrared Detectors: Radiometric, Noise Spectrum, and Radiation Tolerance Performance.

Degree: Nanoscience and Microsystems, 2016, University of New Mexico

  Infrared (IR) hybrid detector arrays and discrete detectors operated in the space environment may be subjected to a variety of sources of natural radiation… (more)

Subjects/Keywords: Electrical and Electronics; Electronic Devices and Semiconductor Manufacturing; Nanoscience and Nanotechnology; Nuclear Engineering

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APA (6th Edition):

Cowan, V. M. (2016). Measurement and Analysis of III-V & II-VI Infrared Detectors: Radiometric, Noise Spectrum, and Radiation Tolerance Performance. (Doctoral Dissertation). University of New Mexico. Retrieved from https://digitalrepository.unm.edu/nsms_etds/34

Chicago Manual of Style (16th Edition):

Cowan, Vincent M. “Measurement and Analysis of III-V & II-VI Infrared Detectors: Radiometric, Noise Spectrum, and Radiation Tolerance Performance.” 2016. Doctoral Dissertation, University of New Mexico. Accessed February 24, 2020. https://digitalrepository.unm.edu/nsms_etds/34.

MLA Handbook (7th Edition):

Cowan, Vincent M. “Measurement and Analysis of III-V & II-VI Infrared Detectors: Radiometric, Noise Spectrum, and Radiation Tolerance Performance.” 2016. Web. 24 Feb 2020.

Vancouver:

Cowan VM. Measurement and Analysis of III-V & II-VI Infrared Detectors: Radiometric, Noise Spectrum, and Radiation Tolerance Performance. [Internet] [Doctoral dissertation]. University of New Mexico; 2016. [cited 2020 Feb 24]. Available from: https://digitalrepository.unm.edu/nsms_etds/34.

Council of Science Editors:

Cowan VM. Measurement and Analysis of III-V & II-VI Infrared Detectors: Radiometric, Noise Spectrum, and Radiation Tolerance Performance. [Doctoral Dissertation]. University of New Mexico; 2016. Available from: https://digitalrepository.unm.edu/nsms_etds/34


University of Tennessee – Knoxville

26. Mostafa, Salwa. Modeling And Development Of A MEMS Device For Pyroelectric Energy Scavenging.

Degree: 2011, University of Tennessee – Knoxville

 As the world faces an energy crisis with depleting fossil fuel reserves, alternate energy sources are being researched ever more seriously. In addition to renewable… (more)

Subjects/Keywords: MEMS; Pyroelectric; Energy scavenging; Modeling; Electronic Devices and Semiconductor Manufacturing; Mechanics of Materials; Nanotechnology Fabrication

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APA (6th Edition):

Mostafa, S. (2011). Modeling And Development Of A MEMS Device For Pyroelectric Energy Scavenging. (Doctoral Dissertation). University of Tennessee – Knoxville. Retrieved from https://trace.tennessee.edu/utk_graddiss/1208

Chicago Manual of Style (16th Edition):

Mostafa, Salwa. “Modeling And Development Of A MEMS Device For Pyroelectric Energy Scavenging.” 2011. Doctoral Dissertation, University of Tennessee – Knoxville. Accessed February 24, 2020. https://trace.tennessee.edu/utk_graddiss/1208.

MLA Handbook (7th Edition):

Mostafa, Salwa. “Modeling And Development Of A MEMS Device For Pyroelectric Energy Scavenging.” 2011. Web. 24 Feb 2020.

Vancouver:

Mostafa S. Modeling And Development Of A MEMS Device For Pyroelectric Energy Scavenging. [Internet] [Doctoral dissertation]. University of Tennessee – Knoxville; 2011. [cited 2020 Feb 24]. Available from: https://trace.tennessee.edu/utk_graddiss/1208.

Council of Science Editors:

Mostafa S. Modeling And Development Of A MEMS Device For Pyroelectric Energy Scavenging. [Doctoral Dissertation]. University of Tennessee – Knoxville; 2011. Available from: https://trace.tennessee.edu/utk_graddiss/1208

27. Subramany, Lokesh. Gpu Based Lithography Simulation and Opc.

Degree: MS, Electrical & Computer Engineering, 2011, University of Massachusetts

  Optical Proximity Correction (OPC) is a part of a family of techniques called Resolution Enhancement Techniques (RET). These techniques are employed to increase the… (more)

Subjects/Keywords: Lithography; OPC; GPU; Mask; Pixel; Process Variation; Computational Engineering; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Subramany, L. (2011). Gpu Based Lithography Simulation and Opc. (Masters Thesis). University of Massachusetts. Retrieved from https://scholarworks.umass.edu/theses/721

Chicago Manual of Style (16th Edition):

Subramany, Lokesh. “Gpu Based Lithography Simulation and Opc.” 2011. Masters Thesis, University of Massachusetts. Accessed February 24, 2020. https://scholarworks.umass.edu/theses/721.

MLA Handbook (7th Edition):

Subramany, Lokesh. “Gpu Based Lithography Simulation and Opc.” 2011. Web. 24 Feb 2020.

Vancouver:

Subramany L. Gpu Based Lithography Simulation and Opc. [Internet] [Masters thesis]. University of Massachusetts; 2011. [cited 2020 Feb 24]. Available from: https://scholarworks.umass.edu/theses/721.

Council of Science Editors:

Subramany L. Gpu Based Lithography Simulation and Opc. [Masters Thesis]. University of Massachusetts; 2011. Available from: https://scholarworks.umass.edu/theses/721

28. Nagavalli Yogeesh, Maruthi. SiGe Millimeter-Wave (W-Band) Down-Converter for Phased Focal Plane Array.

Degree: MS, Electrical & Computer Engineering, 2013, University of Massachusetts

  A millimeter-wave (W-Band) down-converter for Phased Focal Plane Arrays (PFPAs) has been designed and fabricated using the IBM Silicon-Germanium (SiGe) BiCMOS 8HP process technology.… (more)

Subjects/Keywords: down-conveter; phase focal plane array; match networks; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Nagavalli Yogeesh, M. (2013). SiGe Millimeter-Wave (W-Band) Down-Converter for Phased Focal Plane Array. (Masters Thesis). University of Massachusetts. Retrieved from https://scholarworks.umass.edu/theses/1143

Chicago Manual of Style (16th Edition):

Nagavalli Yogeesh, Maruthi. “SiGe Millimeter-Wave (W-Band) Down-Converter for Phased Focal Plane Array.” 2013. Masters Thesis, University of Massachusetts. Accessed February 24, 2020. https://scholarworks.umass.edu/theses/1143.

MLA Handbook (7th Edition):

Nagavalli Yogeesh, Maruthi. “SiGe Millimeter-Wave (W-Band) Down-Converter for Phased Focal Plane Array.” 2013. Web. 24 Feb 2020.

Vancouver:

Nagavalli Yogeesh M. SiGe Millimeter-Wave (W-Band) Down-Converter for Phased Focal Plane Array. [Internet] [Masters thesis]. University of Massachusetts; 2013. [cited 2020 Feb 24]. Available from: https://scholarworks.umass.edu/theses/1143.

Council of Science Editors:

Nagavalli Yogeesh M. SiGe Millimeter-Wave (W-Band) Down-Converter for Phased Focal Plane Array. [Masters Thesis]. University of Massachusetts; 2013. Available from: https://scholarworks.umass.edu/theses/1143


Boise State University

29. Ailavajhala, Mahesh Satyanarayana. Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, and Testing.

Degree: 2014, Boise State University

 For decades, various radiation-detecting materials have been extensively researched, to find a better material or mechanism. Recently, there has been a growing need for smaller,… (more)

Subjects/Keywords: Chalcogenide glasses; Ag containing glasses; Radiation Sensor; Electronic Devices and Semiconductor Manufacturing; Nanotechnology Fabrication

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APA (6th Edition):

Ailavajhala, M. S. (2014). Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, and Testing. (Thesis). Boise State University. Retrieved from https://scholarworks.boisestate.edu/td/814

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ailavajhala, Mahesh Satyanarayana. “Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, and Testing.” 2014. Thesis, Boise State University. Accessed February 24, 2020. https://scholarworks.boisestate.edu/td/814.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ailavajhala, Mahesh Satyanarayana. “Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, and Testing.” 2014. Web. 24 Feb 2020.

Vancouver:

Ailavajhala MS. Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, and Testing. [Internet] [Thesis]. Boise State University; 2014. [cited 2020 Feb 24]. Available from: https://scholarworks.boisestate.edu/td/814.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ailavajhala MS. Nano-Ionic Radiation Sensor: Materials Engineering, Device Design, and Testing. [Thesis]. Boise State University; 2014. Available from: https://scholarworks.boisestate.edu/td/814

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Arkansas

30. Burford, Nathan Matthias. Design, Fabrication and Measurement of a Plasmonic Enhanced Terahertz Photoconductive Antenna.

Degree: PhD, 2016, University of Arkansas

  Generation of broadband terahertz (THz) pulses from ultrafast photoconductive antennas (PCAs) is an attractive method for THz spectroscopy and imaging. This provides a wide… (more)

Subjects/Keywords: Pure sciences; Applied sciences; Antenna; Optoelectronics; Terahertz; Electromagnetics and Photonics; Electronic Devices and Semiconductor Manufacturing

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APA (6th Edition):

Burford, N. M. (2016). Design, Fabrication and Measurement of a Plasmonic Enhanced Terahertz Photoconductive Antenna. (Doctoral Dissertation). University of Arkansas. Retrieved from https://scholarworks.uark.edu/etd/1841

Chicago Manual of Style (16th Edition):

Burford, Nathan Matthias. “Design, Fabrication and Measurement of a Plasmonic Enhanced Terahertz Photoconductive Antenna.” 2016. Doctoral Dissertation, University of Arkansas. Accessed February 24, 2020. https://scholarworks.uark.edu/etd/1841.

MLA Handbook (7th Edition):

Burford, Nathan Matthias. “Design, Fabrication and Measurement of a Plasmonic Enhanced Terahertz Photoconductive Antenna.” 2016. Web. 24 Feb 2020.

Vancouver:

Burford NM. Design, Fabrication and Measurement of a Plasmonic Enhanced Terahertz Photoconductive Antenna. [Internet] [Doctoral dissertation]. University of Arkansas; 2016. [cited 2020 Feb 24]. Available from: https://scholarworks.uark.edu/etd/1841.

Council of Science Editors:

Burford NM. Design, Fabrication and Measurement of a Plasmonic Enhanced Terahertz Photoconductive Antenna. [Doctoral Dissertation]. University of Arkansas; 2016. Available from: https://scholarworks.uark.edu/etd/1841

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