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You searched for subject:(EDMOS). Showing records 1 – 4 of 4 total matches.

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University of Toronto

1. Chen, Jingxuan. HV EDMOS Design with Expansion Regime Suppression.

Degree: 2013, University of Toronto

Lateral Extended Drain MOSFET (EDMOS) is one of the most popular high voltage structures used to implement modern smart power integrated circuits. However, conventional EDMOS(more)

Subjects/Keywords: EDMOS; Expansion Effect; Impact Ionization Effect; 0544

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APA (6th Edition):

Chen, J. (2013). HV EDMOS Design with Expansion Regime Suppression. (Masters Thesis). University of Toronto. Retrieved from http://hdl.handle.net/1807/69761

Chicago Manual of Style (16th Edition):

Chen, Jingxuan. “HV EDMOS Design with Expansion Regime Suppression.” 2013. Masters Thesis, University of Toronto. Accessed October 14, 2019. http://hdl.handle.net/1807/69761.

MLA Handbook (7th Edition):

Chen, Jingxuan. “HV EDMOS Design with Expansion Regime Suppression.” 2013. Web. 14 Oct 2019.

Vancouver:

Chen J. HV EDMOS Design with Expansion Regime Suppression. [Internet] [Masters thesis]. University of Toronto; 2013. [cited 2019 Oct 14]. Available from: http://hdl.handle.net/1807/69761.

Council of Science Editors:

Chen J. HV EDMOS Design with Expansion Regime Suppression. [Masters Thesis]. University of Toronto; 2013. Available from: http://hdl.handle.net/1807/69761

2. Litty, Antoine. Conception, fabrication, caractérisation et modélisation de transistors MOSFET haute tension en technologie avancée SOI (Silicon-On-Insulator) : Conception, realization, characterization and modeling of High Voltage MOSFETs transistors in advanced SOI (silicon on insulator) technologies.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2016, Grenoble Alpes

A l’heure où la miniaturisation des technologies CMOS sur substrat massif atteint des limites, la technologie FDSOI (silicium sur isolant totalement déserté) s’impose comme une… (more)

Subjects/Keywords: FDSOI; MOS haute tension; EDMOS; CMOS avancé; FDSOI; High-voltage MOSFET; EDMOS; Advanced CMOS; 620

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APA (6th Edition):

Litty, A. (2016). Conception, fabrication, caractérisation et modélisation de transistors MOSFET haute tension en technologie avancée SOI (Silicon-On-Insulator) : Conception, realization, characterization and modeling of High Voltage MOSFETs transistors in advanced SOI (silicon on insulator) technologies. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2016GREAT002

Chicago Manual of Style (16th Edition):

Litty, Antoine. “Conception, fabrication, caractérisation et modélisation de transistors MOSFET haute tension en technologie avancée SOI (Silicon-On-Insulator) : Conception, realization, characterization and modeling of High Voltage MOSFETs transistors in advanced SOI (silicon on insulator) technologies.” 2016. Doctoral Dissertation, Grenoble Alpes. Accessed October 14, 2019. http://www.theses.fr/2016GREAT002.

MLA Handbook (7th Edition):

Litty, Antoine. “Conception, fabrication, caractérisation et modélisation de transistors MOSFET haute tension en technologie avancée SOI (Silicon-On-Insulator) : Conception, realization, characterization and modeling of High Voltage MOSFETs transistors in advanced SOI (silicon on insulator) technologies.” 2016. Web. 14 Oct 2019.

Vancouver:

Litty A. Conception, fabrication, caractérisation et modélisation de transistors MOSFET haute tension en technologie avancée SOI (Silicon-On-Insulator) : Conception, realization, characterization and modeling of High Voltage MOSFETs transistors in advanced SOI (silicon on insulator) technologies. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2016. [cited 2019 Oct 14]. Available from: http://www.theses.fr/2016GREAT002.

Council of Science Editors:

Litty A. Conception, fabrication, caractérisation et modélisation de transistors MOSFET haute tension en technologie avancée SOI (Silicon-On-Insulator) : Conception, realization, characterization and modeling of High Voltage MOSFETs transistors in advanced SOI (silicon on insulator) technologies. [Doctoral Dissertation]. Grenoble Alpes; 2016. Available from: http://www.theses.fr/2016GREAT002

3. Al-Taie, Mahir Jabbar Rashid. A Comparison of EDMOS and Cascode Structures for PA Design in 65 nm CMOS Technology.

Degree: The Institute of Technology, 2013, Linköping UniversityLinköping University

  This thesis addresses the potential of implementing watt-level class-AB Power Amplifier (PA) for WLAN in 65 nm CMOS technology, at 2.4 GHz frequency. In… (more)

Subjects/Keywords: RF; Power amplifier; Linearity; PAE; Reliabilty issues; EVM; Cascode; HV-MOS; EDMOS; Matching networks.

…65nm CMOS, and one PA using a high-voltage Extended Drain MOS (EDMOS) device… …simulation results show that the EDMOS PA (L=350 nm) has the smallest area, but has… …Complementary Metal-Oxide-Semiconductor DC Direct Current EDMOS Extended Drain Metal-Oxide… …Amplifier Cascode Power Amplifier EDMOS Power Amplifier Test Bench Devices Parameters Simulation… …29 Figure 2.19: A structures of (a) N-EDMOS, (b) P-EDMOS… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Al-Taie, M. J. R. (2013). A Comparison of EDMOS and Cascode Structures for PA Design in 65 nm CMOS Technology. (Thesis). Linköping UniversityLinköping University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-97753

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Al-Taie, Mahir Jabbar Rashid. “A Comparison of EDMOS and Cascode Structures for PA Design in 65 nm CMOS Technology.” 2013. Thesis, Linköping UniversityLinköping University. Accessed October 14, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-97753.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Al-Taie, Mahir Jabbar Rashid. “A Comparison of EDMOS and Cascode Structures for PA Design in 65 nm CMOS Technology.” 2013. Web. 14 Oct 2019.

Vancouver:

Al-Taie MJR. A Comparison of EDMOS and Cascode Structures for PA Design in 65 nm CMOS Technology. [Internet] [Thesis]. Linköping UniversityLinköping University; 2013. [cited 2019 Oct 14]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-97753.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Al-Taie MJR. A Comparison of EDMOS and Cascode Structures for PA Design in 65 nm CMOS Technology. [Thesis]. Linköping UniversityLinköping University; 2013. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-97753

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. Mohsin, Taif. Design of a predriver for an EDMOS-based Class-D power amplifier.

Degree: The Institute of Technology, 2013, Linköping UniversityLinköping University

  This thesis addresses the potential of implementing a predriver for class-D power amplifier for WLAN in 65 nm CMOS technology. In total, eight different… (more)

Subjects/Keywords: RF; Power amplifier; DE; PAE; Output power; Effective area; Reliabilty issues; Predriver; EDMOS; CMOS.

…inversion) leakage (ISUB)...28 xiii 2.4 EDMOS Device… …29 Figure 2.22: N-type EDMOS… …30 Figure 2.23: P-type EDMOS… …achieved from the PA. To reach high output power, the extended drain MOS transistor (EDMOS… …drive the EDMOS transistors. The high efficiency of the switch-mode amplifiers (class-D… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mohsin, T. (2013). Design of a predriver for an EDMOS-based Class-D power amplifier. (Thesis). Linköping UniversityLinköping University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-98133

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mohsin, Taif. “Design of a predriver for an EDMOS-based Class-D power amplifier.” 2013. Thesis, Linköping UniversityLinköping University. Accessed October 14, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-98133.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mohsin, Taif. “Design of a predriver for an EDMOS-based Class-D power amplifier.” 2013. Web. 14 Oct 2019.

Vancouver:

Mohsin T. Design of a predriver for an EDMOS-based Class-D power amplifier. [Internet] [Thesis]. Linköping UniversityLinköping University; 2013. [cited 2019 Oct 14]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-98133.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mohsin T. Design of a predriver for an EDMOS-based Class-D power amplifier. [Thesis]. Linköping UniversityLinköping University; 2013. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-98133

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

.