Dept: Electrical Engineering ❌
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University of Minnesota
1.
Smith, Angeline.
Generation of Spin Currents for Spintronic Logic Applications.
Degree: PhD, Electrical Engineering, 2016, University of Minnesota
URL: http://hdl.handle.net/11299/188887 
► Current complementary metal oxide semiconductor (CMOS) technologies currently suffer drawbacks such as increased power consumption and device variability with scaling as well as volatility. In…
(more)
▼ Current complementary metal oxide semiconductor (CMOS) technologies currently suffer drawbacks such as increased power consumption and device variability with scaling as well as volatility. In order to further advance computation technologies in the future, new and alternative devices are being explored to overcome these limitations. One promising approach is spintronic devices in which information is stored and computed based on the spin of electrons rather than the absence or presence of charge such as in CMOS. Spintronics offers many possible benefits including fast operational speed, low power consumption, and nonvolatility. This dissertation explores methods of generating spin polarized currents for the operation of logic devices and the fabrication of these devices for logic applications. The first device explored is a non-local lateral spin valve which can be used to generate a pure spin current and is the basic building block for the concept of all-spin logic. A unique top-down fabrication approach for lateral spin valves is created and demonstrated. Sub 100nm Co nanopillar devices are fabricated on a Cu channel using a top down approach that allows the entire material stack to be deposited initially under vacuum as opposed to devices fabricated using shadow beam lithography or lift-off techniques for ferromagnetic strips. A non-local signal is measured in these devices which indicates the top-down approach can successfully be used for integration of these devices. This demonstration is essential for these devices to be successfully implemented and scaled in computer applications at the industrial level. . In the second part of the dissertation, my research on spin Hall effect devices and the application of these devices for a spin Hall majority gate logic device are presented. The spin Hall effect is explored in bulk perpendicular TbFeCo/Ta devices which lays the groundwork for the following experiments. Then, a composite spin Hall structure is developed in order to switch perpendicular magnetization using the spin Hall effect without the need for an externally applied field. To demonstrate the ability to tune the material properties of a spin Hall channel, studies are also presented on a variety of multilayer spin Hall devices. Last, a three-input MTJ device is proposed for a spin orbit torque combined with spin transfer torque majority gate. Three MTJ devices are fabricated on Ta and three distinct switching states are shown corresponding to switching of the individual input elements. Additionally, simulation work is presented to verify the concept of the majority gate.
Subjects/Keywords: Device Fabrication; Magnetic Logic; Spintronics
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APA (6th Edition):
Smith, A. (2016). Generation of Spin Currents for Spintronic Logic Applications. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/188887
Chicago Manual of Style (16th Edition):
Smith, Angeline. “Generation of Spin Currents for Spintronic Logic Applications.” 2016. Doctoral Dissertation, University of Minnesota. Accessed December 06, 2019.
http://hdl.handle.net/11299/188887.
MLA Handbook (7th Edition):
Smith, Angeline. “Generation of Spin Currents for Spintronic Logic Applications.” 2016. Web. 06 Dec 2019.
Vancouver:
Smith A. Generation of Spin Currents for Spintronic Logic Applications. [Internet] [Doctoral dissertation]. University of Minnesota; 2016. [cited 2019 Dec 06].
Available from: http://hdl.handle.net/11299/188887.
Council of Science Editors:
Smith A. Generation of Spin Currents for Spintronic Logic Applications. [Doctoral Dissertation]. University of Minnesota; 2016. Available from: http://hdl.handle.net/11299/188887
University of Toledo
2.
Shan, Ambalanath.
Expanded Beam Spectroscopic Ellipsometer for High Speed
Mapping of PhotovoltaicMaterials.
Degree: PhD, Electrical Engineering, 2017, University of Toledo
URL: http://rave.ohiolink.edu/etdc/view?acc_num=toledo1493306189501021
► As a result of recent advances in photovoltaics technology, renewable energy generated by the sun has become a viable alternative to traditional sources of energy.…
(more)
▼ As a result of recent advances in photovoltaics
technology, renewable energy generated by the sun has become a
viable alternative to traditional sources of energy. Photovoltaic
modules composed of thin film solar cell devices offer several
advantages over standard wafer based silicon modules, including
high throughput automated production and reduced materials usage
and cost. Spectroscopic ellipsometry (SE) is an important
measurement tool capable of aiding high throughput manufacturing
processes for thin films. SE is a non-destructive measurement
technique well suited to measure and track parameters critical to
photovoltaic
device performance such as layer thicknesses, as well
as optical and electrical properties of the layer components.This
dissertation seeks to extend the application of SE via an
expanded-beam method to large area photovoltaic modules while
retaining the high measurement speeds of single spot measurements
with collimated beams. The transition of ellipsometers as
laboratory instruments to ones suitable for high throughput
manufacturing lines poses unique challenges. The construction of a
rotating compensator ellipsometer suitable for industrial
applications is addressed with an emphasis on measurement speed.
Schemes are evaluated to correct SE data for the inherent
misalignments present in large area measurements of full-scale
panels. In particular, consideration is given to the problems of
oscillations due to compensator misalignment, effects of glass
stress and overlap of reflected beams in through-the-glass
measurements, and off-plane corrections due to large area substrate
curvature.Expanded-beam SE was developed and applied for in situ,
high-speed imaging/mapping analysis of spatial uniformity over
large area multilayer coated substrates used in roll-to-roll thin
film photovoltaics (PV). Slower speed instrumentation available for
such analysis applies a 1D detector array for spectroscopic mapping
andinvolves width-wise translation of SE optics over a conveyed
substrate surface, measuring point-by-point in a time-consuming
process. The expanded-beam instrument instead employs a 2D detector
array with no moving optics, exploiting one array index for
spectroscopy and the second array index for imaging across a line
on a large area sample. Thus, the instrument enables imaging
width-wise and mapping length-wise for evaluation of uniformity at
the high linear substrate speeds required for real-time, in-situ,
and inline analysis for roll-to-roll thin film PV. In this
dissertation, the expanded beam technique is employed to study the
components of a hydrogenated amorphous silicon (aSi:H) thin film
photovoltaic
device structure in the Ag/ZnO/n-i-p substrate
configuration. The layers were deposited on a flexible substrate
mounted on a roll-to-roll cassette. Ellipsometric measurements were
performed using an expanded beam spectroscopic ellipsometer capable
of simultaneously measuring 41 locations across the width of the
substrate to form a line image. Layer thicknesses and optical
property maps were…
Advisors/Committee Members: Collins, Robert (Advisor).
Subjects/Keywords: Electrical Engineering; Ellipsometry, Expanded-Beam, Device Structure
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APA (6th Edition):
Shan, A. (2017). Expanded Beam Spectroscopic Ellipsometer for High Speed
Mapping of PhotovoltaicMaterials. (Doctoral Dissertation). University of Toledo. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=toledo1493306189501021
Chicago Manual of Style (16th Edition):
Shan, Ambalanath. “Expanded Beam Spectroscopic Ellipsometer for High Speed
Mapping of PhotovoltaicMaterials.” 2017. Doctoral Dissertation, University of Toledo. Accessed December 06, 2019.
http://rave.ohiolink.edu/etdc/view?acc_num=toledo1493306189501021.
MLA Handbook (7th Edition):
Shan, Ambalanath. “Expanded Beam Spectroscopic Ellipsometer for High Speed
Mapping of PhotovoltaicMaterials.” 2017. Web. 06 Dec 2019.
Vancouver:
Shan A. Expanded Beam Spectroscopic Ellipsometer for High Speed
Mapping of PhotovoltaicMaterials. [Internet] [Doctoral dissertation]. University of Toledo; 2017. [cited 2019 Dec 06].
Available from: http://rave.ohiolink.edu/etdc/view?acc_num=toledo1493306189501021.
Council of Science Editors:
Shan A. Expanded Beam Spectroscopic Ellipsometer for High Speed
Mapping of PhotovoltaicMaterials. [Doctoral Dissertation]. University of Toledo; 2017. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=toledo1493306189501021
NSYSU
3.
Wei, Tzu-Chiang.
Design and Modeling of Planar Transformer-based Integrated Passive Devices.
Degree: Master, Electrical Engineering, 2008, NSYSU
URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726108-235711
► This thesis is mainly composed of two parts. The first part is to introduce the planar transformer-based circuits and their applications. The mixed-mode S parameters…
(more)
▼ This thesis is mainly composed of two parts. The first part is to introduce the planar transformer-based circuits and their applications. The mixed-mode S parameters and the grounding effects for planar transformers are discussed. A physical model has been developed for modeling the planar transformers. In the second part, a new coil winding technique for planar transformers has been presented to realize a high-efficiency planar transformer with arbitrary turn ratio for power-split/combine and phase-shift applications. Especially, the power-split/combine architecture based on a planar transformer of cellular shape is first presented in this thesis, enabling various kinds of passive components to be widely realized using the integrated passive
device processes. As an example, this thesis proposes a design procedure for high-efficiency balun component. Firstly, design a high Q transformer that considers the load impedance effects. Secondly, design the ground reference for un-balanced signal on the virtual ground symmetry axis for balanced signals. Thirdly, design impedance matching networks for minimizing un-balanced and balanced port return losses. Then, a high performance planar transformer-based balun design can be done.
Advisors/Committee Members: Sheng-Fuh Chang (chair), Tzyy-Sheng Horng (committee member), Sung-Mao Wu (chair), Huey-Ru Chuang (chair), Chie-In Lee (chair).
Subjects/Keywords: Planar Transformer; Balun; Integrated Passive Device
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APA (6th Edition):
Wei, T. (2008). Design and Modeling of Planar Transformer-based Integrated Passive Devices. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726108-235711
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Wei, Tzu-Chiang. “Design and Modeling of Planar Transformer-based Integrated Passive Devices.” 2008. Thesis, NSYSU. Accessed December 06, 2019.
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726108-235711.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Wei, Tzu-Chiang. “Design and Modeling of Planar Transformer-based Integrated Passive Devices.” 2008. Web. 06 Dec 2019.
Vancouver:
Wei T. Design and Modeling of Planar Transformer-based Integrated Passive Devices. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Dec 06].
Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726108-235711.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Wei T. Design and Modeling of Planar Transformer-based Integrated Passive Devices. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0726108-235711
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
NSYSU
4.
Yang, Ya-Wen.
Designs of Novel Antennas and Artificial Electromagnetic Cover Layers for Medical Implant Communication Systems.
Degree: Master, Electrical Engineering, 2012, NSYSU
URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716112-161948
► In this thesis, we design novel implantable antennas for medical implant communication systems and it could operate with the metamaterial which is the artificial electromagnetic…
(more)
▼ In this thesis, we design novel implantable antennas for medical implant communication systems and it could operate with the metamaterial which is the artificial electromagnetic (EM) cover layer. The metamaterial based matching layer placed on the surface of the body can improve the performance of the implantable antenna.
First, we propose two layers and three layers antenna design. The three layers antenna features high tolerance, high gain, low-profile and miniaturization. The antenna achieves gain −21.7 dBi and efficiency 0.2%. Compared with other literatures of implanted antenna design, the proposed three layers antenna reveals the best gain with similar dimensions. Furthermore, its frequency response is insensitive to the change of the implanted environment.
The conception of impedance matching is applied to further improve the gain of the proposed antenna. The matching layers are realized by utilizing the metamaterial and it is placed between the body and the air. In this case, the gain of the threeâlayer antenna can be enhanced by 1.23â5.2 dB. Furthermore, we propose a size reduction technique to reduce the thickness of the matching layer. The miniature matching layers can increase the gain of the threeâlayer antenna by 1.64 dB and 2.63 dB with the dimension of 40Ã40Ã4mm³ and 60Ã60Ã4mm³ respectively.
Finally, we propose a coâdesign method of the antenna and metamaterial. The antenna will resonate after placing metamaterial on the surface of the body. So that we can control the antenna whether to transmit power or not by the circuit design in the biomedical
device to detect the return loss of the antenna.
Advisors/Committee Members: Chih-Wen Kuo (chair), Ken-Huang Lin (committee member), Lih-Tyng Hwang (chair), Hsin-Lung Su (chair), Sung-Lin Chen (chair).
Subjects/Keywords: Implantable antenna; Implantable medical device (IMD); Metamaterial
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APA ·
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APA (6th Edition):
Yang, Y. (2012). Designs of Novel Antennas and Artificial Electromagnetic Cover Layers for Medical Implant Communication Systems. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716112-161948
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Yang, Ya-Wen. “Designs of Novel Antennas and Artificial Electromagnetic Cover Layers for Medical Implant Communication Systems.” 2012. Thesis, NSYSU. Accessed December 06, 2019.
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716112-161948.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Yang, Ya-Wen. “Designs of Novel Antennas and Artificial Electromagnetic Cover Layers for Medical Implant Communication Systems.” 2012. Web. 06 Dec 2019.
Vancouver:
Yang Y. Designs of Novel Antennas and Artificial Electromagnetic Cover Layers for Medical Implant Communication Systems. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 Dec 06].
Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716112-161948.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Yang Y. Designs of Novel Antennas and Artificial Electromagnetic Cover Layers for Medical Implant Communication Systems. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0716112-161948
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Arizona State University
5.
Jayaram Thulasingam, Gokula Kannan.
The Role of the Collisional Broadening of the States on the
Low-Field Mobility in Silicon Inversion Layers.
Degree: Electrical Engineering, 2017, Arizona State University
URL: http://repository.asu.edu/items/46289
► Scaling of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) towards shorter channel lengths, has lead to an increasing importance of quantum effects on the device performance.…
(more)
▼ Scaling of the Metal-Oxide-Semiconductor Field Effect
Transistor (MOSFET) towards shorter channel lengths, has lead to an
increasing importance of quantum effects on the device performance.
Until now, a semi-classical model based on Monte Carlo method for
instance, has been sufficient to address these issues in silicon,
and arrive at a reasonably good fit to experimental mobility data.
But as the semiconductor world moves towards 10nm technology, many
of the basic assumptions in this method, namely the very
fundamental Fermi’s golden rule come into question. The derivation
of the Fermi’s golden rule assumes that the scattering is
infrequent (therefore the long time limit) and the collision
duration time is zero. This thesis overcomes some of the
limitations of the above approach by successfully developing a
quantum mechanical simulator that can model the low-field inversion
layer mobility in silicon MOS capacitors and other inversion layers
as well. It solves for the scattering induced collisional
broadening of the states by accounting for the various scattering
mechanisms present in silicon through the non-equilibrium based
near-equilibrium Green’s Functions approach, which shall be
referred to as near-equilibrium Green’s Function (nEGF) in this
work. It adopts a two-loop approach, where the outer loop solves
for the self-consistency between the potential and the subband
sheet charge density by solving the Poisson and the Schrödinger
equations self-consistently. The inner loop solves for the nEGF
(renormalization of the spectrum and the broadening of the states),
self-consistently using the self-consistent Born approximation,
which is then used to compute the mobility using the Green-Kubo
Formalism.
Subjects/Keywords: Electrical engineering; Electronic Transport,; Semiconductor Device Modeling and Simulation; Semiconductor Device Physics,; Semiconductors
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APA ·
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APA (6th Edition):
Jayaram Thulasingam, G. K. (2017). The Role of the Collisional Broadening of the States on the
Low-Field Mobility in Silicon Inversion Layers. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/46289
Chicago Manual of Style (16th Edition):
Jayaram Thulasingam, Gokula Kannan. “The Role of the Collisional Broadening of the States on the
Low-Field Mobility in Silicon Inversion Layers.” 2017. Doctoral Dissertation, Arizona State University. Accessed December 06, 2019.
http://repository.asu.edu/items/46289.
MLA Handbook (7th Edition):
Jayaram Thulasingam, Gokula Kannan. “The Role of the Collisional Broadening of the States on the
Low-Field Mobility in Silicon Inversion Layers.” 2017. Web. 06 Dec 2019.
Vancouver:
Jayaram Thulasingam GK. The Role of the Collisional Broadening of the States on the
Low-Field Mobility in Silicon Inversion Layers. [Internet] [Doctoral dissertation]. Arizona State University; 2017. [cited 2019 Dec 06].
Available from: http://repository.asu.edu/items/46289.
Council of Science Editors:
Jayaram Thulasingam GK. The Role of the Collisional Broadening of the States on the
Low-Field Mobility in Silicon Inversion Layers. [Doctoral Dissertation]. Arizona State University; 2017. Available from: http://repository.asu.edu/items/46289
NSYSU
6.
Wang, Chien-Chung.
An Efficient Scheme for Processing Arbitrary Lumped Multi-Port Devices in the Finite-Difference Time-Domain Method.
Degree: PhD, Electrical Engineering, 2007, NSYSU
URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627107-125210
► Developing full-wave simulators for high-frequency circuit simulation is a topic many researchers have investigated. Generally speaking, methods invoking analytic pre-processing of the deviceâs V-I relations…
(more)
▼ Developing full-wave simulators for high-frequency circuit simulation is a topic many researchers have investigated. Generally speaking, methods invoking analytic pre-processing of the deviceâs V-I relations (admittance or impedance) are computationally more efficient than methods employing numerical procedure to iteratively process the
device at each time step. For circuits providing complex functionality, two-port or possibly multi-port devices whether passive or active, are sure to appear in the circuits. Therefore, extensions to currently available full-wave methods for handling one-port devices to process multi-port devices would be useful for hybrid microwave circuit designs. In this dissertation, an efficient scheme for processing arbitrary multi-port devices in the finite-difference time-domain (FDTD) method is proposed. The deviceâs admittance is analytically pre-processed and fitted into one grid cell. With an improved time-stepping expression, the computation efficiency is further increased. Multi-port devices in the circuit can be systematically incorporated and analyzed in a full-wave manner. The accuracy of the proposed method is verified by comparison with results from the equivalent current-source method and is numerically stable.
Advisors/Committee Members: Huey-Ru Chuang (chair), Ming-Cheng Liang (chair), Sheng-Fuh Chang (chair), Kin-Lu Wong (chair), Chih-Wen Kuo (committee member), Tzyy-Sheng Horng (chair), Tzong-Lin Wu (chair), Yu-De Lin (chair), Ken-Huang Lin (chair).
Subjects/Keywords: lumped device; multi-port device; finite-difference time-domain
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APA (6th Edition):
Wang, C. (2007). An Efficient Scheme for Processing Arbitrary Lumped Multi-Port Devices in the Finite-Difference Time-Domain Method. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627107-125210
Chicago Manual of Style (16th Edition):
Wang, Chien-Chung. “An Efficient Scheme for Processing Arbitrary Lumped Multi-Port Devices in the Finite-Difference Time-Domain Method.” 2007. Doctoral Dissertation, NSYSU. Accessed December 06, 2019.
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627107-125210.
MLA Handbook (7th Edition):
Wang, Chien-Chung. “An Efficient Scheme for Processing Arbitrary Lumped Multi-Port Devices in the Finite-Difference Time-Domain Method.” 2007. Web. 06 Dec 2019.
Vancouver:
Wang C. An Efficient Scheme for Processing Arbitrary Lumped Multi-Port Devices in the Finite-Difference Time-Domain Method. [Internet] [Doctoral dissertation]. NSYSU; 2007. [cited 2019 Dec 06].
Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627107-125210.
Council of Science Editors:
Wang C. An Efficient Scheme for Processing Arbitrary Lumped Multi-Port Devices in the Finite-Difference Time-Domain Method. [Doctoral Dissertation]. NSYSU; 2007. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0627107-125210
University of Southern California
7.
Ji, Mingyue.
Fundamental limits of caching networks: turning memory into
bandwidth.
Degree: PhD, Electrical Engineering, 2015, University of Southern California
URL: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/614118/rec/2946
► In classical communications/information theoretic problems, the messages (contents) are generated at the sources, and requested at the destinations. Location of the messages and demands are…
(more)
▼ In classical communications/information theoretic
problems, the messages (contents) are generated at the sources, and
requested at the destinations. Location of the messages and demands
are known beforehand. One key feature that makes the study of
caching networks different from the classical communication
problems is that in this scenario, only the set of possible
contents is given and user demands are not known a priori. Some
nodes have (constrained) storage capacity, and some nodes make
requests. We can build the cached contents a priori (part of the
code setup) together with the designed (coded) delivery such that
user demands can be satisfied. ❧ One important application of
caching networks is video streaming in the wireless networks. In
this thesis, we present a novel transmission paradigm based on the
following two key properties: (i) video shows a high degree of
asynchronous content reuse, and (ii) storage is the
fastest-increasing quantity in modern hardware. Based on these
properties, we suggest caching at nodes in networks, especially, at
wireless edge, namely, caching in helper stations (femto-caching)
and/or directly into the user devices. ❧ We study two fundamentally
different network structures:
device-to-
device (D2D) caching
networks and shared link caching networks. D2D caching networks
consists of n destination nodes (users), each with a cache of size
M files. There is no central controller (base station) in the
network and nodes can directly communicate with each other. One the
other hand, the shared link network is formed by a source node
(base station), hosting a library of m information messages
(files), connected via a noiseless common link to n destination
nodes with a cache of size M files. The users are not allowed to
communicate directly. ❧ We design content placement and delivery
schemes, based on both coded multicasting (in shared link caching
networks and D2D caching networks) and D2D transmission (in D2D
caching networks), that show a “Moore’s law” for throughput: in a
certain regime of sufficiently high content reuse and/or
sufficiently high aggregate cache capacity, the per-user throughput
can increase linearly or even super-linearly with the local cache
size, and it is independent of the number of users. This means that
under realistic parameter regimes, we can turn memory into
bandwidth. In this thesis, we prove that the proposed schemes are
information-theoretic order-optimal and identify the regimes in
which they exhibit order gains compared to state-of-the-art
approaches under different channel models.
Advisors/Committee Members: Caire, Giuseppe (Committee Chair), Molisch, Andreas F. (Committee Member), Goldstein, Larry (Committee Member).
Subjects/Keywords: information theory; caching networks; fundamental limits; wireless communications; shared link networks; device-to-device networks; coding theory; index coding; algorithms
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Manager
APA (6th Edition):
Ji, M. (2015). Fundamental limits of caching networks: turning memory into
bandwidth. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/614118/rec/2946
Chicago Manual of Style (16th Edition):
Ji, Mingyue. “Fundamental limits of caching networks: turning memory into
bandwidth.” 2015. Doctoral Dissertation, University of Southern California. Accessed December 06, 2019.
http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/614118/rec/2946.
MLA Handbook (7th Edition):
Ji, Mingyue. “Fundamental limits of caching networks: turning memory into
bandwidth.” 2015. Web. 06 Dec 2019.
Vancouver:
Ji M. Fundamental limits of caching networks: turning memory into
bandwidth. [Internet] [Doctoral dissertation]. University of Southern California; 2015. [cited 2019 Dec 06].
Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/614118/rec/2946.
Council of Science Editors:
Ji M. Fundamental limits of caching networks: turning memory into
bandwidth. [Doctoral Dissertation]. University of Southern California; 2015. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll3/id/614118/rec/2946
Texas A&M University
8.
Wang, Binhao.
Modeling of Photonic Devices and Photonic Integrated Circuits for Optical Interconnect and RF Photonic Front-End Applications.
Degree: PhD, Electrical Engineering, 2016, Texas A&M University
URL: http://hdl.handle.net/1969.1/156940
► Photonic integrated circuits (PICs) offer compelling solutions for applications in many areas due to the sufficient functionality and excellent performance. Optical interconnects and radio frequency…
(more)
▼ Photonic integrated circuits (PICs) offer compelling solutions for applications in many areas due to the sufficient functionality and excellent performance. Optical interconnects and radio frequency (RF) photonics are two areas in which PICs have potential to be widely used. Optical interconnect system efficiency is dependent on the ability to optimize the transceiver circuitry for low-power and high-bandwidth operation, motivating co-simulation environments with compact optical
device simulation models. Compact models for vertical-cavity surface-emitting lasers (VCSELs) and silicon carrier-injection/depletion ring modulators which include both non-linear electrical and optical dynamics are presented, and excellent matching between co-simulated and measured optical eye diagrams is achieved.
Advanced modulation schemes, such as four-level pulse-amplitude modulation (PAM4), are currently under consideration in both high-speed electrical and optical interconnect systems. How NRZ and PAM4 modulation impacts the energy efficiency of an optical link architecture based on silicon photonic microring resonator modulators and drop filters is analyzed. Two ring modulator
device structures are proposed for PAM4 modulation, including a single-segment
device driven with a multi-level PAM4 transmitter and a two-segment
device driven by two simple NRZ (MSB/LSB) transmitters. Modeling results show that the PAM4 architectures achieve superior energy efficiency at higher data rates due to the relaxed circuit bandwidth.
While RF photonics offer the promise of chip-scale opto-electrical systems with high levels of functionality, in order to avoid long and unsuccessful design cycles, efficient models that allow for co-simulation are necessary. In order to address this, an optical element modeling framework is proposed based on Verilog-A which allows for the co-simulation of optical elements with transistor-level circuits in a Cadence design environment. Three components in the RF photonic system, Mach Zehnder (MZ) modulators, 4th order all pass filter (APF)-based optical filters, and jammer-suppression notch filters are presented to demonstrate the capability of efficient system design in co-simulation environments.
Advisors/Committee Members: Palermo, Samuel (advisor), Madsen, Christi K. (committee member), Entesari, Kamran (committee member), Choe, Yoonsuck (committee member).
Subjects/Keywords: photonic device; VCSEL; silicon ring modulator; photonic integrated circuit
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APA (6th Edition):
Wang, B. (2016). Modeling of Photonic Devices and Photonic Integrated Circuits for Optical Interconnect and RF Photonic Front-End Applications. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/156940
Chicago Manual of Style (16th Edition):
Wang, Binhao. “Modeling of Photonic Devices and Photonic Integrated Circuits for Optical Interconnect and RF Photonic Front-End Applications.” 2016. Doctoral Dissertation, Texas A&M University. Accessed December 06, 2019.
http://hdl.handle.net/1969.1/156940.
MLA Handbook (7th Edition):
Wang, Binhao. “Modeling of Photonic Devices and Photonic Integrated Circuits for Optical Interconnect and RF Photonic Front-End Applications.” 2016. Web. 06 Dec 2019.
Vancouver:
Wang B. Modeling of Photonic Devices and Photonic Integrated Circuits for Optical Interconnect and RF Photonic Front-End Applications. [Internet] [Doctoral dissertation]. Texas A&M University; 2016. [cited 2019 Dec 06].
Available from: http://hdl.handle.net/1969.1/156940.
Council of Science Editors:
Wang B. Modeling of Photonic Devices and Photonic Integrated Circuits for Optical Interconnect and RF Photonic Front-End Applications. [Doctoral Dissertation]. Texas A&M University; 2016. Available from: http://hdl.handle.net/1969.1/156940
The Ohio State University
9.
Chung, Sung-Yong.
si/sige heterostructures: materials, physics, quantum
functional devices and their integration with heterostructure
bipolar transistors.
Degree: PhD, Electrical Engineering, 2005, The Ohio State University
URL: http://rave.ohiolink.edu/etdc/view?acc_num=osu1132244278
► With the advent of the first transistor in 1947, the integrated circuit (IC) industry has rapidly expanded with the tremendous advances in the development of…
(more)
▼ With the advent of the first transistor in 1947, the
integrated circuit (IC) industry has rapidly expanded with the
tremendous advances in the development of IC technology. The
driving force in the evolution of IC technology is the reduction of
transistor sizes. Without a doubt, transistor miniaturization will
face fundamental physical limitations imposed by further
dimensional scaling of silicon transistors in the near future.
According to the 2004 International Technology Roadmap for
Semiconductors (ITRS), the width of a gate electrode for
complementary metal-oxide-semiconductor (CMOS) is projected to be a
mere 7 nm by the end of 2018. No further solutions have been found.
Since the 2001 ITRS, tunneling devices have been evaluated as an
emerging technology to augment silicon CMOS. Transistor circuitry
incorporating tunneling devices realized using III-V semiconductors
has exhibited superior performance over its transistor-only
counterparts. However, due to fundamental differences in material
properties, such technology is not readily compatible with the
mainstream platforms (>95% market share of semiconductors) of
CMOS and HBT technologies. Recently, we demonstrated the successful
monolithic integration of Si-based resonant interband tunnel diodes
(RITDs) with CMOS and SiGe HBT, which makes them more attractive
than III-V based tunnel diodes for system level integration. This
dissertation is concerned with the development of quantum
functional tunneling devices, RITDs, and high-speed transistors,
HBTs, using Si/SiGe heterostructures as well as material growth and
electrical properties of Si/SiGe heterostructures. Emphasis is
placed on the development of Si/SiGe-based RITDs, HBTs, and their
monolithic integration for 3-terminal negative differential
resistance (NDR) devices. The operating principles of Si-based
RITDs and the integration of RITD with HBT are also
discussed.
Advisors/Committee Members: Berger, Paul (Advisor).
Subjects/Keywords: sige tunnel diode; quantum device
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APA (6th Edition):
Chung, S. (2005). si/sige heterostructures: materials, physics, quantum
functional devices and their integration with heterostructure
bipolar transistors. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1132244278
Chicago Manual of Style (16th Edition):
Chung, Sung-Yong. “si/sige heterostructures: materials, physics, quantum
functional devices and their integration with heterostructure
bipolar transistors.” 2005. Doctoral Dissertation, The Ohio State University. Accessed December 06, 2019.
http://rave.ohiolink.edu/etdc/view?acc_num=osu1132244278.
MLA Handbook (7th Edition):
Chung, Sung-Yong. “si/sige heterostructures: materials, physics, quantum
functional devices and their integration with heterostructure
bipolar transistors.” 2005. Web. 06 Dec 2019.
Vancouver:
Chung S. si/sige heterostructures: materials, physics, quantum
functional devices and their integration with heterostructure
bipolar transistors. [Internet] [Doctoral dissertation]. The Ohio State University; 2005. [cited 2019 Dec 06].
Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1132244278.
Council of Science Editors:
Chung S. si/sige heterostructures: materials, physics, quantum
functional devices and their integration with heterostructure
bipolar transistors. [Doctoral Dissertation]. The Ohio State University; 2005. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1132244278
NSYSU
10.
Chen, Shin-Hua.
Fabrication and Characteristic Optimization of TFBAR Filters.
Degree: Master, Electrical Engineering, 2009, NSYSU
URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0817109-160127
► In this study, the ladder-type filters based on back-etched thin film bulk acoustic resonator (TFBAR) were fabricated with several patterns to investigate the influence on…
(more)
▼ In this study, the ladder-type filters based on back-etched thin film bulk acoustic resonator (TFBAR) were fabricated with several patterns to investigate the influence on their frequency responses. The highly c-axis oriented ZnO films were deposited on silicon substrates by reactive RF magnetron sputtering. The optimal two-step deposition temperature for ZnO films is 100 â, which is obtained by means of SEM AFM, and XRD analysis.
According to the experimental results, it leads to good resonance responses as TFBAR filters are fabricated with the patterns of large resonance area, two stages
and the ratio of shunt/series resonance area is equal to two. Herein, conventional thermal annealing (CTA) was adopted to improve the frequency responses of
TFBAR filters. Because CTA treatment can release stress and improve surface roughness of ZnO and Pt films, it enhances the frequency responses of TFBAR
filters. The optimal CTA treatment temperature for TFBAR filters is 400 â. Finally, TFBAR filters show the good performances with insertion loss of -8.138 dB, band rejection of 10.9 dB and bandwidth of 37.125 MHz.
Advisors/Committee Members: Chien-Chuan Cheng (chair), Rurng-Sheng Guo (chair), Ying-Chung Chen (committee member), Cheng-Fu Yang (chair), Hsiung Chou (chair).
Subjects/Keywords: ZnO; filter; bulk acoustic wave device; ladder type filter
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APA (6th Edition):
Chen, S. (2009). Fabrication and Characteristic Optimization of TFBAR Filters. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0817109-160127
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Chen, Shin-Hua. “Fabrication and Characteristic Optimization of TFBAR Filters.” 2009. Thesis, NSYSU. Accessed December 06, 2019.
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0817109-160127.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Chen, Shin-Hua. “Fabrication and Characteristic Optimization of TFBAR Filters.” 2009. Web. 06 Dec 2019.
Vancouver:
Chen S. Fabrication and Characteristic Optimization of TFBAR Filters. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Dec 06].
Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0817109-160127.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Chen S. Fabrication and Characteristic Optimization of TFBAR Filters. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0817109-160127
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
NSYSU
11.
Chung, Yi-Ping.
Design of a Class-A Cascode Configured Power Amplifier at 5.8 GHz.
Degree: Master, Electrical Engineering, 2013, NSYSU
URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0722113-223545
► This thesis includes three major parts. The first part (chapter II) describes power amplifier classification, characteristics and design principles. Because class A power amplifier has…
(more)
▼ This thesis includes three major parts. The first part (chapter II) describes power amplifier classification, characteristics and design principles. Because class A power amplifier has higher output power and linearity, this configuration has been used to design power amplifier. In the second part (chapter III), two CMOS 0.18 um two stages class A cascode configured power amplifiers were designed at 5.8 GHz. They respectively exhibited saturated output power of 18-dBm and 17.6-dBm, PAE of 23-% and 20.5-%, power gain of 19-dB and 22.5-dB, P1dB of 15.2-dBm and 14.5-dBm, and with chip areas of 0.79 mm2 and 0.77 mm2. The third part (chapter IV) explores simulation results of the CMOS power amplifiers integrated with IPD (integrated passive
device) inductors, instead of the on-chip CMOS inductors. Because IPD process has low substrate loss and high quality factor, the loss of passive
device can be decreased. But, the path parasitic inductance between IPD pad and CMOS chip could degrades the power amplifier characteristics. This chapter discusses the parasitic effect of co-design in detail. Chapter V is the conclusions and future work.
Advisors/Committee Members: Chih-Wen Kuo (chair), Ken-Huang Lin (chair), Lih-Tyng Hwang (committee member).
Subjects/Keywords: cascode configuration; power amplifier; class A; IPD(Integrated passive device); CMOS
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Manager
APA (6th Edition):
Chung, Y. (2013). Design of a Class-A Cascode Configured Power Amplifier at 5.8 GHz. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0722113-223545
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Chung, Yi-Ping. “Design of a Class-A Cascode Configured Power Amplifier at 5.8 GHz.” 2013. Thesis, NSYSU. Accessed December 06, 2019.
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0722113-223545.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Chung, Yi-Ping. “Design of a Class-A Cascode Configured Power Amplifier at 5.8 GHz.” 2013. Web. 06 Dec 2019.
Vancouver:
Chung Y. Design of a Class-A Cascode Configured Power Amplifier at 5.8 GHz. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Dec 06].
Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0722113-223545.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Chung Y. Design of a Class-A Cascode Configured Power Amplifier at 5.8 GHz. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0722113-223545
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
NSYSU
12.
Huang, Kuo-Yu.
Development of gel polymer electrolyte for electrochromic devices.
Degree: Master, Electrical Engineering, 2013, NSYSU
URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0727113-075049
► In this study, the gel polymer electrolyte was fabricated by using propylene carbonate (PC), ethylene carbonate (EC), lithium perchlorate (LiClO4), plasticiser (D-600) (dithylene glycol monobutyl…
(more)
▼ In this study, the gel polymer electrolyte was fabricated by using propylene carbonate (PC), ethylene carbonate (EC), lithium perchlorate (LiClO4), plasticiser (D-600) (dithylene glycol monobutyl ether and adipic acid mixture) and polyvinyl butyral (PVB). The optical and physical properties of the gel polymer electrolyte were investigated. And the gel polymer electrolyte was applied to the WO3-NiO complementary electrochromic
device (CECD). The electrochromic properties of CECD were investigated.
Experimental results reveal that the liquid electrolyte can be obtained using PC, 40 wt.% EC with 8 wt.%LiClO4 and adding 30 wt.% D-600. And the gel polymer electrolyte can be obtained using liquid electrolyte and PVB in a weight ratio of 2:1. The gel polymer electrolyte exhibited a transmittance of 89.56% (λ@550 nm), an ionic conductivity of 1.63Ã10-4 S/cm (@RT), a withstanding voltage of 3 Vï¼ a weight loss of 5% at 100â environment, and the Li+ ions were completely dissociated form. The gel polymer electrolyte was applied to the CECD. The better electrochromic CECD biased with a colored voltage of -1.8 V exhibited a colored transmittance of 18.72%, a transmittance change (â³T%) of 45.22%, an optical density change (â³OD) of 0.53, an intercalation charge (Q) of 7.30 mC/cm2 and a coloration efficiency (η) of 74.40 cm2/C at a wavelength (λ) of 550 nm. Besides, the transmittance of colored state rised to 24.77% after 24 h without biased voltage supply. The CECD showed a well memory effect. The response time of the CECD was found to be about 10 s for colored and bleached state. The CECD exhibited a transmittance change (â³T%) of 30.10% after 1000 cycles.
Advisors/Committee Members: Chih-Ming Wang (chair), Ying-Chung Chen (committee member), Mau-Phon Houng (chair), Meng-Chyi Wu (chair), Shoou-Jinn Chang (chair).
Subjects/Keywords: Gel polymer electrolyte; Transmittance; Electrochromic device; Ionic conductivity; Coloration efficiency
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APA ·
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MLA ·
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Manager
APA (6th Edition):
Huang, K. (2013). Development of gel polymer electrolyte for electrochromic devices. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0727113-075049
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Huang, Kuo-Yu. “Development of gel polymer electrolyte for electrochromic devices.” 2013. Thesis, NSYSU. Accessed December 06, 2019.
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0727113-075049.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Huang, Kuo-Yu. “Development of gel polymer electrolyte for electrochromic devices.” 2013. Web. 06 Dec 2019.
Vancouver:
Huang K. Development of gel polymer electrolyte for electrochromic devices. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Dec 06].
Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0727113-075049.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Huang K. Development of gel polymer electrolyte for electrochromic devices. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0727113-075049
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
NSYSU
13.
Weng, Tseng-Wei.
Triple-Wideband LTE/WWAN Combined-type Antennas for Tablet Devices.
Degree: Master, Electrical Engineering, 2014, NSYSU
URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0516114-114319
► In this thesis, novel combined-type antennas having three wide operating bands (698~960 MHz, 1710~2690 MHz, and 3400~3800 MHz) to cover the LTE/WWAN operation for tablet…
(more)
▼ In this thesis, novel combined-type antennas having three wide operating bands (698~960 MHz, 1710~2690 MHz, and 3400~3800 MHz) to cover the LTE/WWAN operation for tablet devices are presented. In the first design, the antenna uses a main structure thereof to provide a wide middle wideband of 1710~2690 MHz. Then, by combining an inductively coupled low-band branch strip with the main structure, the antenna can cover the desired lower wideband of 698~960 MHz. By further simply adding a short branch strip, the desired higher wideband of 3400~3800 MHz can be obtained. The antenna can achieve triple-wideband LTE/WWAN operation and occupy a small size of 10 â 45 mm2 with a uniplanar structure. The second antenna design uses a main structure to provide an ultra-wideband of 1710~3800 MHz to cover the desired middle wideband and higher bandwidth. Then the desired lower wideband is achieved by applying the technique used in the first antenna with a high-pass matching circuit. The occupied clearance region of the second antenna is greatly decreased to 10 â 35 mm2 only. The third antenna design uses a simple monopole structure integrating an internal low-pass matching circuit to cover the desired middle wideband and decrease the clearance region needed. In addition, by applying the previously presented techniques, the desired lower wideband can be generated. For the desired higher wideband, it is achieved by simply adding a short branch strip. Furthermore, the third antenna can be disposed in a smaller clearance region of 10 â 30 mm2 with good radiation characteristics.
Advisors/Committee Members: Kin-Lu Wong (committee member), Saou-Wen Su (chair), Yuan-Chih Lin (chair), Kin-Lu Wong (chair), Wei-Yu Li (chair).
Subjects/Keywords: Combining-type antenna; LTE/WWAN; Tablet device; Triple-wideband; Matching circuit
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APA (6th Edition):
Weng, T. (2014). Triple-Wideband LTE/WWAN Combined-type Antennas for Tablet Devices. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0516114-114319
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Weng, Tseng-Wei. “Triple-Wideband LTE/WWAN Combined-type Antennas for Tablet Devices.” 2014. Thesis, NSYSU. Accessed December 06, 2019.
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0516114-114319.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Weng, Tseng-Wei. “Triple-Wideband LTE/WWAN Combined-type Antennas for Tablet Devices.” 2014. Web. 06 Dec 2019.
Vancouver:
Weng T. Triple-Wideband LTE/WWAN Combined-type Antennas for Tablet Devices. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Dec 06].
Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0516114-114319.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Weng T. Triple-Wideband LTE/WWAN Combined-type Antennas for Tablet Devices. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0516114-114319
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
NSYSU
14.
Peng, Hsin-han.
Study of Electrochromic Properties of Lithium Nickel Oxide Films Prepared by Electron Beam Evaporation.
Degree: Master, Electrical Engineering, 2016, NSYSU
URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724116-145034
► In this study, the LixNi1-xO powder was mixed and sintered by the NiO and Li2CO3 powders to produce the LixNi1-xO electrochromic film which was deposited…
(more)
▼ In this study, the LixNi1-xO powder was mixed and sintered by the NiO and Li2CO3 powders to produce the LixNi1-xO electrochromic film which was deposited by electron beam evaporation. Doping Li2CO3 not only can improve the NiO film structure but also increase the amount of charges stored, which makes the complementary electrochromic
device (CECD) behave better.
Experimental results reveal that as the 1 wt.% of Li2CO3 was doped into NiO, the LixNi1-xO material was formed. The optimal deposition conditions of LixNi1-xO films were oxygen pressure of 1Ã10-3 Torr at room temperature (R.T.) by electron beam evaporation. The thicknesses of LixNi1-xO films were about 530 nm. The best characteristics of electrochromic CECD revealed a transmittance change (ÎT%) of 58.4%, an optical density (ÎOD) of 0.733, an intercalation charge (Q) of 8.02 mC/cm2, an coloration efficiency(η) of 91.3 cm2/C and a specific capacitance of 18.13 μF/cm2, which are, in turn, 22.3% and 23.5% increasing of the coloration efficiency (η = 74.6 cm2/C) and specific capacitance (14.68 μF/cm2) for the CECD made of NiO film. This results demonstrate that the doping of Li2CO3 can effectively improve the charges-storing amount of NiO film and CECD electrochromic characteristics. After 96h the ÎT of colored CECD is increased merely 7.8%, which shows that the CECD with LixNi1-xO film has a good memory effect.
Advisors/Committee Members: Chih-Ming Wang (chair), Yeong-Her Wang (chair), Mau-Phon Houng (chair), Ying-Chung Chen (committee member), Teen-Hang Meen (chair).
Subjects/Keywords: Complementary electrochromic device; Electron beam evaporation; Lithium nickel oxide; Nickel oxide
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APA ·
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Manager
APA (6th Edition):
Peng, H. (2016). Study of Electrochromic Properties of Lithium Nickel Oxide Films Prepared by Electron Beam Evaporation. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724116-145034
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Peng, Hsin-han. “Study of Electrochromic Properties of Lithium Nickel Oxide Films Prepared by Electron Beam Evaporation.” 2016. Thesis, NSYSU. Accessed December 06, 2019.
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724116-145034.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Peng, Hsin-han. “Study of Electrochromic Properties of Lithium Nickel Oxide Films Prepared by Electron Beam Evaporation.” 2016. Web. 06 Dec 2019.
Vancouver:
Peng H. Study of Electrochromic Properties of Lithium Nickel Oxide Films Prepared by Electron Beam Evaporation. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Dec 06].
Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724116-145034.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Peng H. Study of Electrochromic Properties of Lithium Nickel Oxide Films Prepared by Electron Beam Evaporation. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724116-145034
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
NSYSU
15.
Liou, Cian-ci.
Electrical-Optical Characteristics of Organic Light-Emitting Diodes with Rubrene- Doped Active Layer.
Degree: Master, Electrical Engineering, 2014, NSYSU
URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0608114-185052
► In this study, the active layer of organic light-emitting devices (OLEDs) of PVK: Rubrene are analyzed material properties and measured OLEDs electrical-optical characteristics. OLEDs structures…
(more)
▼ In this study, the active layer of organic light-emitting devices (OLEDs) of PVK: Rubrene are analyzed material properties and measured OLEDs electrical-optical characteristics. OLEDs structures are ITO (125 nm)/ PEDOT: PSS (65 nm)/ PVK: x wt% Rubrene (y nm)/ Al (100 nm). Each
device area is 0.25 cm2.
Because of the quenching effect, the active layer of OLEDs doped with 0, 5, 10, 15 wt% Rubrene are investigated. The OLED of the active layer doping with 5 wt% Rubrene has the best electrical-optical characteristics: the transmittance is 91%, the threshold voltage is 10.4V, and the maximum luminous intensity is 0.14 cd/m2.
The thickness of the active layer will affect the mobility of carriers and recombination. OLEDs of the active layer with thickness 42, 65,101 nm are designed. The OLED of the thickness of the active layer is 65 nm has the best electrical-optical characteristics: the threshold voltage is 10.6V, and the maximum luminous intensity is 0.27 cd/m2.
To discuss the influence of baking temperature on OLED of the active layer, OLEDs with the active layer baking at 60, 80, 100, 120â are proposed. The OLED of the active layer baking at 100â has the best electrical-optical characteristics: the transmittance is 95.5%, the threshold voltage is 8.8V, and the maximum luminous intensity is 0.18 cd/m2. And the luminous intensity does not increase at a specific angle, so that it does not have the micro-cavity in the OLED.
Advisors/Committee Members: Yi-Tsung Chang (committee member), Mu-Jen Lai (chair), Wei-Chen Tu (chair), Jyi-Tsong Lin (committee member), Lung-Chien Chen (chair).
Subjects/Keywords: Rubrene; PVK; polymer; organic light-emitting device; spin-coated
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APA (6th Edition):
Liou, C. (2014). Electrical-Optical Characteristics of Organic Light-Emitting Diodes with Rubrene- Doped Active Layer. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0608114-185052
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Liou, Cian-ci. “Electrical-Optical Characteristics of Organic Light-Emitting Diodes with Rubrene- Doped Active Layer.” 2014. Thesis, NSYSU. Accessed December 06, 2019.
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0608114-185052.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Liou, Cian-ci. “Electrical-Optical Characteristics of Organic Light-Emitting Diodes with Rubrene- Doped Active Layer.” 2014. Web. 06 Dec 2019.
Vancouver:
Liou C. Electrical-Optical Characteristics of Organic Light-Emitting Diodes with Rubrene- Doped Active Layer. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Dec 06].
Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0608114-185052.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Liou C. Electrical-Optical Characteristics of Organic Light-Emitting Diodes with Rubrene- Doped Active Layer. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0608114-185052
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
NSYSU
16.
Shen, Yu-An.
Fabrication of the complementary electrochromic device on flexible substrate.
Degree: Master, Electrical Engineering, 2015, NSYSU
URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724115-132746
► In this study, the Polyethylene terephthalate (PET) polymer is chosen as flexible substrate. The flexible transparency electrode is fabricated by depositing silicon dioxide film (SiO2)…
(more)
▼ In this study, the Polyethylene terephthalate (PET) polymer is chosen as flexible substrate. The flexible transparency electrode is fabricated by depositing silicon dioxide film (SiO2) and indium tin oxide film (ITO) on PET substrate. The physical properties and the variation of resistance at different curvature radius of flexible transparency electrode are investigated. Then, the flexible transparency electrode is applied to the WO3-NiO complementary electrochromic
device (CECD) and also the characteristics of CECD are investigated.
The experimental results reveal that the optical transmittance of flexible transparency electrode is 62.83% (λ@550 nm) and the sheet resistance is 30 Ω/sq. The resistance of flexible transparency electrode under various curvature radius of 1~5 cm are 47 Ω~40 Ω. The variation of resistance is 17.5%.
The optimal characteristics of CECD are obtained at 2.2 V colored voltage, the transmittance change (ÎT%) is 27.85%, the optical density (ÎOD) is 0.32, the intercalation charge (Q) is 6.06 mC/cm2 and the color efficiency (η) is 53 cm2/C at wavelength of 550 nm, respectively. The transmittance of colored state increases from 28.90% to 39.75% after 24 hour without biased voltage. The response time (Ïb) of bleaching of the CECD is found to be about 5 s and the response time (Ïc) of coloration is 12 s. In high temperature environment, the CECD exhibits stable transmittance change and functions well. Finally, the CECD is attached to glass tube with different curvature radius and driven with scan rate of 50 mV/s from -2.2 V to 2.2 V. It can be found that after driving 100 times, the
device work well and have stable charge intercalation under different curvature radius.
Advisors/Committee Members: Chih-Ming Wang (chair), Chien-Jung Huang (chair), Mau-Phon Houng (chair), Ying-Chung Chen (committee member), Cheng-Fu Yang (chair).
Subjects/Keywords: Complementary electrochromic device; Optical transmittance; Curvature radius; Flexible substrate; Silicon dioxide
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APA (6th Edition):
Shen, Y. (2015). Fabrication of the complementary electrochromic device on flexible substrate. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724115-132746
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Shen, Yu-An. “Fabrication of the complementary electrochromic device on flexible substrate.” 2015. Thesis, NSYSU. Accessed December 06, 2019.
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724115-132746.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Shen, Yu-An. “Fabrication of the complementary electrochromic device on flexible substrate.” 2015. Web. 06 Dec 2019.
Vancouver:
Shen Y. Fabrication of the complementary electrochromic device on flexible substrate. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Dec 06].
Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724115-132746.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Shen Y. Fabrication of the complementary electrochromic device on flexible substrate. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724115-132746
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
NSYSU
17.
Chiu, Chun-ming.
Complementary electrochromic device using metal grid electrode structure.
Degree: Master, Electrical Engineering, 2015, NSYSU
URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731115-001955
► In this study, the electrodes for the complementary electrochromic device (CECD) were fabricated using cooper, nickel-vanadium and tungsten by pulsed-DC sputtering deposite on and formed…
(more)
▼ In this study, the electrodes for the complementary electrochromic
device (CECD) were fabricated using cooper, nickel-vanadium and tungsten by pulsed-DC sputtering deposite on and formed the metal grid structure by self-made mask. Then, the electrochromic films of NiO and WO3 were respectively deposited on these electrodes by e-beam evaporation. Finally, these electrodes were applied to CECDs with gel polymer electrolyte. This study sequentially investigated the stability of high-temperature environment and electrochemical circulation, uniformity of the simulated electric field and the effect on the
device characteristics with or without metal grid structure.
The first part of the experimental results is the characteristics of the metal electrode. When the environment temperature rising to 100 â, the sheet resistances of the W, Ni-V and Cu were rised less than 5 %. For the stability of the electrochemical part, the CECD was fabricated with metal electrodes and switched 50 times with ± 1.8 V. The results reveal that the attenuation of the consumed charge of devices with Cu and Ni-V is 14 % and W is the lowest with 8 %. Consequently, the metal W exists the highest electrochemical stability. For the uniformity of the simulated electric field part, the uniformity of the electric field was enhanced by using metal grid structure and the more uniform electric field received by using Cu grid due to its excellent conductivity.
For the fabrication and the analysis of CECD, the CECD exhibited better electrochromic characteristics when the applied voltage is 1.8 V. When the applied time of CECD is 60 s, the experiment results (λ@550 nm) show that the transmittance of colored state is 36.17 %, transmittance change (ÎT%) is 36.16 % and the coloration efficiency (η) is 77.92 cm2/C. The CECD using W grid electrode structure (W-CECD) exhibited better electrochromic characteristics when the applied time is 60 s. The experiment results (λ@550 nm) show that the transmittance of colored state is 32.46 %, ÎT% is 39.08 % and η is 81.93 cm2/C. The CECD using Cu grid electrode structure (Cu-CECD) exhibited better electrochromic characteristics when the applied time is 30 s. The experiment results (λ@550 nm) show that the transmittance of colored state is 36.73 %, ÎT% is 36.67 % and η is 29.62 cm2/C.
For the response time and the memory effect, the response time of the CECD was found to be about 94 s and the transmittance of colored state increased to 36.35 % after 24 h without biased voltage supply. The response time of the W-CECD was found to be about 98 s and the transmittance of colored state increased to 33.31 % after 24 h without biased voltage supply. The results show that the memory effect was still excellent after using metal grid electrode structure.
Advisors/Committee Members: Ying-Chung Chen (committee member), Cheng-Fu Yang (chair), Mau-Phon Houng (chair), Chih-Ming Wang (chair), Feng-Renn Juang (chair).
Subjects/Keywords: Transmittance; Coloration efficiency; Metal grid; E-beam evaporation; Complementary electrochromic device
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APA ·
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Manager
APA (6th Edition):
Chiu, C. (2015). Complementary electrochromic device using metal grid electrode structure. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731115-001955
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Chiu, Chun-ming. “Complementary electrochromic device using metal grid electrode structure.” 2015. Thesis, NSYSU. Accessed December 06, 2019.
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731115-001955.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Chiu, Chun-ming. “Complementary electrochromic device using metal grid electrode structure.” 2015. Web. 06 Dec 2019.
Vancouver:
Chiu C. Complementary electrochromic device using metal grid electrode structure. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Dec 06].
Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731115-001955.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Chiu C. Complementary electrochromic device using metal grid electrode structure. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0731115-001955
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Penn State University
18.
Gu, Haiming.
Chip-scale Cooling Devices Based On Electrocaloric
Effect.
Degree: PhD, Electrical Engineering, 2014, Penn State University
URL: https://etda.libraries.psu.edu/catalog/22072
► The electrocaloric effect (ECE) is a temperature and entropy change of an insulating material when there is an electric field induced polarization change. Recently, giant…
(more)
▼ The electrocaloric effect (ECE) is a temperature and
entropy change of an insulating material when there is an electric
field induced polarization change. Recently, giant ECE was
discovered in a series of dielectric materials, such as
Polyvinylidene fluoride (PVDF) based polymers and ferroelectric
ceramics. The ECE induced adiabatic temperature change in these
materials can be higher than 10 K which makes them attractive
because they provide the unique opportunity to explore and develop
solid state cooling devices which are compact while providing high
cooling power density and high efficiency compare to other cooling
techniques, such as vapor compression refrigeration(VCR),
thermoelectric, thermoacoustic, etc. A few ECE refrigerators have
been studied in previous publications. However, the performance of
those devices are still not so attractive. Besides, most of the
existing works are based on simulation, and very few work has
prototype demonstration. In this thesis, two types of chip scale
ECE based cooling devices with more advanced configurations have
been proposed, studied, and experimentally demonstrated. One is
named as ElectroCaloric Oscillatory Refrigerator (ECOR), which
involves solid-state plates with anisotropic thermal conductivity
as regenerators. The low thermal conductivity along the temperature
gradient direction can reduce the heat conduction loss thus highly
improve the performance of the device. Finite volume simulation
shows that the temperature span (Tspan) of the refrigerator can be
as large as around 50 K. The volumetric cooling power density Pc
and coefficient of performance (COP) of the refrigerator was also
studied. The maximum Pc can reach to 9.2 W/cm3, while the COP
remains at 6.5, which is about 45% of the Carnot efficiency. A
prototype of ECOR was experimentally demonstrated. The EC module
with multilayer structure was fabricated with high energy electro
irradiated poly(vinylidene fluoride-trifluoroethylene)
(P(VDF-TrFE)) copolymer thin film. The regenerators with
anisotropic thermal conductivity was realized by cutting thin slits
in stainless steel plate and then refilled with epoxy. The testing
results show that a maximum value of 6.6 K Tspan was obtained when
the device was working at 1 Hz and with an electric field of 100
MV/m. The second proposed device configuration is based on a rotary
structure. This refrigerator involves no external regenerators.
Instead, the regeneration process is realized by direct heat
exchange between EC materials. The 1-D simulation results show that
the Tspan of the device is nearly proportional to the number of
segments in one ring (Ns), and the ECE induced adiabatic
temperature change (Delta TECE). Owing to the absence of external
regenerators, the Pc of this device can reach 33 W/cm3. Meanwhile,
the COP of the device keeps above 8.5, which is about 60% of Carnot
efficiency. 3-D finite element simulation validates the 1-D
simulation results. A preliminary prototype was fabricated to
demonstrate the proposed concept. About 0.8 K Tspan was obtained…
Subjects/Keywords: Electrocaloric Effect; Cooling Device; Chip Cooling; Chip
refrigerator
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APA ·
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MLA ·
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Export
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Manager
APA (6th Edition):
Gu, H. (2014). Chip-scale Cooling Devices Based On Electrocaloric
Effect. (Doctoral Dissertation). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/22072
Chicago Manual of Style (16th Edition):
Gu, Haiming. “Chip-scale Cooling Devices Based On Electrocaloric
Effect.” 2014. Doctoral Dissertation, Penn State University. Accessed December 06, 2019.
https://etda.libraries.psu.edu/catalog/22072.
MLA Handbook (7th Edition):
Gu, Haiming. “Chip-scale Cooling Devices Based On Electrocaloric
Effect.” 2014. Web. 06 Dec 2019.
Vancouver:
Gu H. Chip-scale Cooling Devices Based On Electrocaloric
Effect. [Internet] [Doctoral dissertation]. Penn State University; 2014. [cited 2019 Dec 06].
Available from: https://etda.libraries.psu.edu/catalog/22072.
Council of Science Editors:
Gu H. Chip-scale Cooling Devices Based On Electrocaloric
Effect. [Doctoral Dissertation]. Penn State University; 2014. Available from: https://etda.libraries.psu.edu/catalog/22072
University of California – Santa Cruz
19.
Zheng, Le.
Memristor-based ternary content addressable memory for data-intensive applications.
Degree: Electrical Engineering, 2015, University of California – Santa Cruz
URL: http://www.escholarship.org/uc/item/263082g7
► Data-intensive storage and computing systems call for continuing advancements both in data latency and energy efficiency. However, the major benefits from CMOS technologies, such as…
(more)
▼ Data-intensive storage and computing systems call for continuing advancements both in data latency and energy efficiency. However, the major benefits from CMOS technologies, such as high packing density and processing speed, are getting desensitized primarily due to the prohibitively increasing power density. In order for the next-generation storage and computing systems to be capable of high performance data-intensive applications, it is necessary to continue innovations in creating new circuits and system architectures, together with searching for new materials and devices. The memristor, short for memory resistor, is a two-terminal passive device whose resistance is controlled by external electrical signals and exhibits non-volatile memory function. Due to its capabilities of non-volatile resistive memories, nanoscale miniaturization in an ultra-high packing density, and intriguing nonlinear dynamics, the memristor is being widely investigated to create new advanced circuit functions and to complement CMOS systems. The memristor technologies will lead current CMOS-based storage and computing systems to the data-intensive electronic systems, with significantly reduced stand-by power, form factor and manufacturing cost. Developing compact models for the memristor is essential to facilitate circuit analyses and designs with memristors. While the previously reported memristor models exhibit limitations in the model stability, versatility and adaptability, we propose a new module-based memristor model that covers a wide range of device behaviors. Coincident to the theoretic memristor behaviors, the proposed model uniquely reveals that an effective charge-flux constitutive relationship can always be obtained from various types of memristors. The stability of the proposed model is also significantly enhanced by adapting the new charge (or flux)-based window function.Associative lookup functions with high throughputs are widely implemented in Ternary Content Addressable Memories (TCAMs). The TCAM holds the potential to curb the latency and power requirements of data-intensive systems. However existing TCAMs that commonly utilize Static Random Access Memories (SRAMs) as the storage units exhibit low storage capacity/density and high cost-per-bit due to bit cells with large areas. We propose a memristor-based ternary content addressable memory (mTCAM) for data-intensive applications. A novel bit cell structure is presented that not only minimizes the bit cell area but also is capable of performance optimizations on the latency and energy consumption. Detailed design issues such as voltage compliance to ensure correct write/search operations, parameter-dependent sensing margins and device variations are also discussed. Circuit level simulations have demonstrated functionalities of the mTCAM. Performance evaluation has shown that mTCAM achieves impressive storage density, search latency and energy consumption. The proposed mTCAM is an attractive candidate in building future computing systems for data-intensive applications.
Subjects/Keywords: Electrical engineering; Content addressable memory; Data-intensive application; Device model; Memristor
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APA (6th Edition):
Zheng, L. (2015). Memristor-based ternary content addressable memory for data-intensive applications. (Thesis). University of California – Santa Cruz. Retrieved from http://www.escholarship.org/uc/item/263082g7
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Zheng, Le. “Memristor-based ternary content addressable memory for data-intensive applications.” 2015. Thesis, University of California – Santa Cruz. Accessed December 06, 2019.
http://www.escholarship.org/uc/item/263082g7.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Zheng, Le. “Memristor-based ternary content addressable memory for data-intensive applications.” 2015. Web. 06 Dec 2019.
Vancouver:
Zheng L. Memristor-based ternary content addressable memory for data-intensive applications. [Internet] [Thesis]. University of California – Santa Cruz; 2015. [cited 2019 Dec 06].
Available from: http://www.escholarship.org/uc/item/263082g7.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Zheng L. Memristor-based ternary content addressable memory for data-intensive applications. [Thesis]. University of California – Santa Cruz; 2015. Available from: http://www.escholarship.org/uc/item/263082g7
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
UCLA
20.
Chen, Xu.
High Voltage GaN-on-Si Field-Effect Transistors for Switching Applications.
Degree: Electrical Engineering, 2015, UCLA
URL: http://www.escholarship.org/uc/item/4697z03c
► Because of the special material properties such as wide band gap, high electron mobility and high breakdown field, Gallium nitride (GaN) based semiconductor devices are…
(more)
▼ Because of the special material properties such as wide band gap, high electron mobility and high breakdown field, Gallium nitride (GaN) based semiconductor devices are well suited for power switching applications. GaN-on-Si technology could significantly reduce the wafer cost of GaN devices. The size of high quality GaN-on-Si wafer is now available up to 6 inch. In order to implement GaN transistors for high-voltage switching applications, there are three core technologies. One is the realization of normally-off operation with low leakage current; the second is the reduction of the on-resistance; the third is increasing the breakdown voltage of the device. Another advantage of GaN based device is the capability to operate at high temperatures. The wide band gap of GaN leads to very low thermal generation of carriers. In this thesis, a field-effect transistor (FET) employing metal-insulator-semiconductor (MIS) structure is proposed to result normally-off operation, temperature-independent threshold voltage and capability of blocking 600V at 200 °C.
Subjects/Keywords: Electrical engineering; Device; GaN; HEMT; High power; High voltage
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APA ·
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MLA ·
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APA (6th Edition):
Chen, X. (2015). High Voltage GaN-on-Si Field-Effect Transistors for Switching Applications. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/4697z03c
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Chen, Xu. “High Voltage GaN-on-Si Field-Effect Transistors for Switching Applications.” 2015. Thesis, UCLA. Accessed December 06, 2019.
http://www.escholarship.org/uc/item/4697z03c.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Chen, Xu. “High Voltage GaN-on-Si Field-Effect Transistors for Switching Applications.” 2015. Web. 06 Dec 2019.
Vancouver:
Chen X. High Voltage GaN-on-Si Field-Effect Transistors for Switching Applications. [Internet] [Thesis]. UCLA; 2015. [cited 2019 Dec 06].
Available from: http://www.escholarship.org/uc/item/4697z03c.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Chen X. High Voltage GaN-on-Si Field-Effect Transistors for Switching Applications. [Thesis]. UCLA; 2015. Available from: http://www.escholarship.org/uc/item/4697z03c
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
University of Southern California
21.
Li, Po-Ying.
Implantable bioMEMS drug delivery systems.
Degree: PhD, Electrical Engineering, 2009, University of Southern California
URL: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/562157/rec/3383
► To date, many drug delivery devices have been proposed, however, so far, none of them can provide all of the functions of (1) implantability, (2)…
(more)
▼ To date, many drug delivery devices have been
proposed, however, so far, none of them can provide all of the
functions of (1) implantability, (2) precise flow control, (3) drug
refillability, and (4) targeted drug delivery. In addition, for
diseased tissues located in small organs (such as the eyeball) or
for small animal models (such as mice) used in genetic or human
disease research, (5) small
device footprint and (6) reliability
are required for the new generation drug delivery system. Current
drug delivery techniques, such as sustained release implants or
microreservoirs, offer a portion of the functions that mentioned
above, but none of them can fulfill all of the requirements listed.
The main reason is that these devices possess simple structures and
usually provide only single function. Therefore, to fulfill all of
the requirements, a multi-component
device is needed.; In this
thesis, we presented two system-level implantable bioMEMS drug
delivery devices based on micromachining technology suitable for
chronic ocular drug administration and acute drug injection in
small animals. Each
device contains several individual components
and each component provides one of the previous mentioned
functions. Combining of all these functions, these system-level
devices can achieve the treatment of incurable eye diseases such as
glaucoma or realize advanced engineering research such as real-time
functional neuroimaging.; Two major components are introduced: (1)
an electrolysis actuator and (2) a Parylene electrothermal valve.
First, the MEMS electrolysis micropump features low power
consumption with large actuation force which is suitable for
implantation. Electrolysis pumping provides precise flow control
(pL/min to uL/min) with either bolus or continuous delivery mode.
The pump is microfabricated so the reduced footprint is suitable
for ocular implantation. The structure of the pump is simple, so it
is reliable compared to mechanical micropumps.; The first MEMS
normally-closed, low power, and on-demand electrothermal valve
constructed using Parylene C that enables both low power (mW) and
rapid (ms) operation suitable of small animal implantation. It is
also microfabricated with small
device dimension. The valve can be
reliably activated using constant current, linear current ramping
and variable current ramping.; Each of these components was
integrated into two system-level drug delivery devices: (1) an
intraocular drug delivery
device for the treatment of eye disease
and (2) a microbolus infusion pump for real-time functional
neuroimaging. First, the intraocular drug delivery
device is
capable of being refilled and enables targeted intraocular drug
delivery. The refillable design permits long-term drug therapy and
avoids repetitive surgeries. A flexible Parylene transscleral
cannula allows targeted delivery to tissues in both the anterior
and posterior segments of the eye. Both the ex vivo and in vivo
testing were performed demonstrating the feasibility of this
device
for ocular drug delivery.; Finally, a disposable…
Advisors/Committee Members: Meng, Ellis (Committee Chair), Kim, Eun Sok (Committee Member), Weiland, James D. (Committee Member).
Subjects/Keywords: bellows; drug delivery device; electrolysis pump; neuroimaging; Parylene
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APA (6th Edition):
Li, P. (2009). Implantable bioMEMS drug delivery systems. (Doctoral Dissertation). University of Southern California. Retrieved from http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/562157/rec/3383
Chicago Manual of Style (16th Edition):
Li, Po-Ying. “Implantable bioMEMS drug delivery systems.” 2009. Doctoral Dissertation, University of Southern California. Accessed December 06, 2019.
http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/562157/rec/3383.
MLA Handbook (7th Edition):
Li, Po-Ying. “Implantable bioMEMS drug delivery systems.” 2009. Web. 06 Dec 2019.
Vancouver:
Li P. Implantable bioMEMS drug delivery systems. [Internet] [Doctoral dissertation]. University of Southern California; 2009. [cited 2019 Dec 06].
Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/562157/rec/3383.
Council of Science Editors:
Li P. Implantable bioMEMS drug delivery systems. [Doctoral Dissertation]. University of Southern California; 2009. Available from: http://digitallibrary.usc.edu/cdm/compoundobject/collection/p15799coll127/id/562157/rec/3383
University of Minnesota
22.
Ma, Cong.
The Design of Spintronic-based Circuitry for Memory and Logic Units in Computer Systems.
Degree: PhD, Electrical Engineering, 2018, University of Minnesota
URL: http://hdl.handle.net/11299/201684
► As CMOS technology starts to face serious scaling and power consumption issues, emerging beyond-CMOS technologies draw substantial attention in recent years. Spintronic device, one of…
(more)
▼ As CMOS technology starts to face serious scaling and power consumption issues, emerging beyond-CMOS technologies draw substantial attention in recent years. Spintronic device, one of the most promising CMOS alternatives, with smaller size and low standby power consumption, fits the needs of the trending mobile and IoT devices. Spin-Transfer Torque-MRAM (STT-MRAM) with comparable read latency with SRAM and All-spin logic (ASL) capable of implementing pure spin-based circuit are the potential candidates to replace CMOS memory and logic devices. However, spintronic memory continues to require higher write energy, presenting a challenge to memory hierarchy design when energy consumption is a concern. This motivates the use of STT-MRAM for the first level caches of a multicore processor to reduce energy consumption without significantly degrading the performance. The large STT-MRAM first-level cache implementation saves leakage power. And the use of small level-0 cache regains the performance drop due to the long write latency of STT-MRAM. This combination reduces the energy-delay product by 65% on average compared to CMOS baseline. All-spin logic suffers from random bit flips that significantly impacts the Boolean logic reliability. Stochastic computing, using random bit streams for computations, has shown low hardware cost and high fault-tolerance compared to the conventional binary encoding. It motivates the use of ASL in stochastic computing to take advantage of its simplicity and fault tolerance. Finite-state machine (FSM), a sequential stochastic computing element, can compute complex functions including the exponentiation and hyperbolic tangent functions more efficiently, but it suffers from long calculation latency and autocorrelation issues. A parallel implementation scheme of FSM is proposed to use an estimator and a dispatcher to directly initialize the FSM to the steady state. It shows equivalent or better results than the serial implementation with some hardware overhead. A re-randomizer that uses an up/down counter is also proposed to solve the autocorrelation issue.
Subjects/Keywords: Cache Hierarchy; Computer Architecture; Spintronic device; Stochastic computing; STT-MRAM
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APA (6th Edition):
Ma, C. (2018). The Design of Spintronic-based Circuitry for Memory and Logic Units in Computer Systems. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/201684
Chicago Manual of Style (16th Edition):
Ma, Cong. “The Design of Spintronic-based Circuitry for Memory and Logic Units in Computer Systems.” 2018. Doctoral Dissertation, University of Minnesota. Accessed December 06, 2019.
http://hdl.handle.net/11299/201684.
MLA Handbook (7th Edition):
Ma, Cong. “The Design of Spintronic-based Circuitry for Memory and Logic Units in Computer Systems.” 2018. Web. 06 Dec 2019.
Vancouver:
Ma C. The Design of Spintronic-based Circuitry for Memory and Logic Units in Computer Systems. [Internet] [Doctoral dissertation]. University of Minnesota; 2018. [cited 2019 Dec 06].
Available from: http://hdl.handle.net/11299/201684.
Council of Science Editors:
Ma C. The Design of Spintronic-based Circuitry for Memory and Logic Units in Computer Systems. [Doctoral Dissertation]. University of Minnesota; 2018. Available from: http://hdl.handle.net/11299/201684
University of Minnesota
23.
Chang, Hsiu-Chuang.
Modeling of electronic properties in organic semiconductor device structures.
Degree: PhD, Electrical Engineering, 2012, University of Minnesota
URL: http://purl.umn.edu/127646
► Organic semiconductors (OSCs) have recently become viable for a wide range of electronic devices, some of which have already been commercialized. With the mechanical flexibility…
(more)
▼ Organic semiconductors (OSCs) have recently become viable for a wide range of electronic devices, some of which have already been commercialized. With the mechanical flexibility of organic materials and promising performance of organic field effect transistors (OFETs) and organic bulk heterojunction devices, OSCs have been demonstrated in applications such as radio frequency identification tags, flexible displays, and photovoltaic cells.
Transient phenomena play decisive roles in the performance of electronic devices and OFETs in particular. The dynamics of the establishment and depletion of the conducting channel in OFETs are investigated theoretically. The device structures explored resemble typical organic thin-film transistors with one of the channel contacts removed. By calculating the displacement current associated with charging and discharging of the channel in these capacitors, transient effects on the carrier transport in OSCs may be studied. In terms of the relevant models it is shown that the non-linearity of the process plays a key role. The non-linearity arises in the simplest case from the fact that channel resistance varies during the charging and discharging phases. Traps can be introduced into the models and their effects examined in some detail. When carriers are injected into the device, a conducting channel is established with traps that are initially empty. Gradual filling of the traps then modifies the transport characteristics of the injected charge carriers. In contrast, dc measurements as they are typically performed to characterize the transport properties of organic semiconductor channels investigate a steady state with traps partially filled. Numerical and approximate analytical models of the formation of the conducting channel and the resulting displacement currents are presented.
For the process of transient carrier extraction, it is shown that if the channel capacitance is partially or completely discharged through the channel resistance, qualitatively different time dependences of the displacement current may be obtained. Depending on the final state of the capacitor, either fully discharged or remaining partially charged, the displacement current in the long time limit shows power law or exponential dependence on time. The salient effect of including fast traps in this model is to change the apparent exponent in the resulting approximate power law for the case of full depletion. The exponent of the power law decreases in magnitude as the ratio of the emission to capture rates decreases. In contrast, the effects of slow traps are quite different. If significant, slow traps can give rise to a slowly decaying displacement current.
In organic bulk heterojunction photovoltaic cells, large interfacial areas that impact the efficiency of photo-generation of charge carriers are of critical importance. Carrier recombination at the interface is studied on the basis of two bilayer structures with interfaces perpendicular and parallel to the current direction, which idealize the…
Subjects/Keywords: Device; Modeling; Organic; Semiconductor; Transient; Transport; Electrical Engineering
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APA (6th Edition):
Chang, H. (2012). Modeling of electronic properties in organic semiconductor device structures. (Doctoral Dissertation). University of Minnesota. Retrieved from http://purl.umn.edu/127646
Chicago Manual of Style (16th Edition):
Chang, Hsiu-Chuang. “Modeling of electronic properties in organic semiconductor device structures.” 2012. Doctoral Dissertation, University of Minnesota. Accessed December 06, 2019.
http://purl.umn.edu/127646.
MLA Handbook (7th Edition):
Chang, Hsiu-Chuang. “Modeling of electronic properties in organic semiconductor device structures.” 2012. Web. 06 Dec 2019.
Vancouver:
Chang H. Modeling of electronic properties in organic semiconductor device structures. [Internet] [Doctoral dissertation]. University of Minnesota; 2012. [cited 2019 Dec 06].
Available from: http://purl.umn.edu/127646.
Council of Science Editors:
Chang H. Modeling of electronic properties in organic semiconductor device structures. [Doctoral Dissertation]. University of Minnesota; 2012. Available from: http://purl.umn.edu/127646
University of Minnesota
24.
Zhang, Liyuan.
Copper zinc tin sulfide (Cu2ZnSnS4) photovoltaic material development and thin film solar cells.
Degree: PhD, Electrical Engineering, 2016, University of Minnesota
URL: http://hdl.handle.net/11299/198360
► Copper zinc tin sulfide (Cu2ZnSnS4, or CZTS) is emerging as an alternative light absorbing material to the present thin film solar cell technologies such as…
(more)
▼ Copper zinc tin sulfide (Cu2ZnSnS4, or CZTS) is emerging as an alternative light absorbing material to the present thin film solar cell technologies such as Cu(In,Ga)Se2 and CdTe. All the elements in CZTS are abundant, environmentally benign, and inexpensive. In addition, CZTS has a band gap of ~1.5 eV, the ideal value for converting the maximum amount of energy from the solar spectrum into electricity. CZTS has a high absorption coefficient (>104 cm-1 in the visible region of the electromagnetic spectrum) and only a few micron thick layer of CZTS can absorb all the photons with energies above its band gap. A two-stage process of CZTS thin film synthesis is presented, which consists of sequential thermal evaporation of copper, tin and zinc layers followed by a heat treatment in the presence of sulfur vapor (sulfurization) in a sealed quartz ampoule. The metal precursor stacking order, deposition rate and thickness of each metal layer can be adjusted to give uniform metal precursor stacks of controlled morphology and composition. The effects of sulfurization temperature, time, substrate material, metal precursor stacking order, and back contact layer on the morphological and structural properties of the CZTS films are investigated. Observations of grain size changes and compositional modification are made and explained in terms of the likely secondary phases present. CZTS thin film solar cells were fabricated and the effects of chemical composition were studied both on the absorber layer properties and on the final solar cell performance. It is confirmed that CZTS thin film chemical composition affects the carrier concentration profile, which then influences the solar cell properties. Only a small deviation from the optimal chemical composition can drop device performance to a lower level, which confirms that the CZTS solar cells with high conversion efficiency existed in a relatively narrow composition region. Besides CZTS absorber chemical composition study, post deposition rapid thermal annealing (RTA) was conducted and its influence on solar cell performance was studied. It is observed that post deposition RTA would lead to an increase of device performance. Through C-V measurement results, we have shown that post RTA of CZTS solar cell affects the CZTS/CdS interfacial defect concentration and zero bias depletion depth, which means the defect-related charge at CZTS/CdS interface reduces and it improves Voc and the fill factor.
Subjects/Keywords: CZTS; light absorber; material growth; semiconductor device; solar cell; thin films
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APA (6th Edition):
Zhang, L. (2016). Copper zinc tin sulfide (Cu2ZnSnS4) photovoltaic material development and thin film solar cells. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/198360
Chicago Manual of Style (16th Edition):
Zhang, Liyuan. “Copper zinc tin sulfide (Cu2ZnSnS4) photovoltaic material development and thin film solar cells.” 2016. Doctoral Dissertation, University of Minnesota. Accessed December 06, 2019.
http://hdl.handle.net/11299/198360.
MLA Handbook (7th Edition):
Zhang, Liyuan. “Copper zinc tin sulfide (Cu2ZnSnS4) photovoltaic material development and thin film solar cells.” 2016. Web. 06 Dec 2019.
Vancouver:
Zhang L. Copper zinc tin sulfide (Cu2ZnSnS4) photovoltaic material development and thin film solar cells. [Internet] [Doctoral dissertation]. University of Minnesota; 2016. [cited 2019 Dec 06].
Available from: http://hdl.handle.net/11299/198360.
Council of Science Editors:
Zhang L. Copper zinc tin sulfide (Cu2ZnSnS4) photovoltaic material development and thin film solar cells. [Doctoral Dissertation]. University of Minnesota; 2016. Available from: http://hdl.handle.net/11299/198360
University of Minnesota
25.
Li, Qiao.
60GHz Resonance Isolator.
Degree: PhD, Electrical Engineering, 2015, University of Minnesota
URL: http://hdl.handle.net/11299/177142
► Recently, 60GHz system is a hot topic for its large unlicensed bandwidth and small component size. However, some components could not be integrated into the…
(more)
▼ Recently, 60GHz system is a hot topic for its large unlicensed bandwidth and small component size. However, some components could not be integrated into the 60GHz communication subsystem either because of their large size or poor performance after integration. One of the most popular ways to build a planar device at high frequency with low cost is to use substrate integrated waveguide (SIW). To make a planar device with low loss at the millimeter waveband, first a 60GHz substrate integrated waveguide with taper transitions from microstrip lines are designed and fabricated. Although planar ferrite isolators based on SIW have been successfully built, all of them work below 20GHz because the ferromagnetic resonance frequency of the traditional ferrite, Yttrium-Iron-Garnet (YIG) is low. Here, to develop a 60GHz isolator based on SIW, a novel C-axis M type Barium thin film ferrite is used. The experimental results proved that the ferromagnetic resonance frequency of this thin film ferrite is much higher than the traditional ferrite materials. In this way a 60GHz H-plane resonance isolator based on SIW is realized with low insert loss and high isolation in the working waveband. Moreover, by integrating a ferromagnetic thin film with ferroelectric thin film, a tunable 60GHz isolator based on SIW was realized. The working frequency of the isolator can be varied with the voltage bias. This method makes it possible to build voltage controlled ferrite devices at 60GHz, which is important for large bandwidth systems.
Subjects/Keywords: 60GHz; barium ferrite; resonance isolator; substrate integrated waveguide; tunable device
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APA (6th Edition):
Li, Q. (2015). 60GHz Resonance Isolator. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/177142
Chicago Manual of Style (16th Edition):
Li, Qiao. “60GHz Resonance Isolator.” 2015. Doctoral Dissertation, University of Minnesota. Accessed December 06, 2019.
http://hdl.handle.net/11299/177142.
MLA Handbook (7th Edition):
Li, Qiao. “60GHz Resonance Isolator.” 2015. Web. 06 Dec 2019.
Vancouver:
Li Q. 60GHz Resonance Isolator. [Internet] [Doctoral dissertation]. University of Minnesota; 2015. [cited 2019 Dec 06].
Available from: http://hdl.handle.net/11299/177142.
Council of Science Editors:
Li Q. 60GHz Resonance Isolator. [Doctoral Dissertation]. University of Minnesota; 2015. Available from: http://hdl.handle.net/11299/177142
26.
Li, Yulong.
Passive Wireless Radiation Dosimeters for Radiation Therapy Using Fully-Depleted Silicon-on-Insulator Devices.
Degree: PhD, Electrical Engineering, 2017, University of Minnesota
URL: http://hdl.handle.net/11299/185595
► Radiation cancer therapy is one of the most important methods of cancer treatment. The goal of radiation therapy is to apply maximum amount of dose…
(more)
▼ Radiation cancer therapy is one of the most important methods of cancer treatment. The goal of radiation therapy is to apply maximum amount of dose to the tumor region while applying minimum amount of dose to the normal tissues. Being able to measure radiation dose accurately is critical for radiation therapy because it will make sure the radiation is properly delivered to the tumor region as planned. In this dissertation, the development of a passive wireless radiation dosimeter for radiation cancer therapy based on fully-depleted silicon-on-insulator (FDSOI) technology was presented through the following steps. In Chapter 1, the radiation cancer therapy and existing dosimetry technology was introduced. Because of the high demand of modern radiation therapy and the deficiency of existing dosimetry. An ultra-small, passive radiation dosimeter will greatly help the dose verification in today’s radiation therapy. In Chapter 2, the building block of proposed dosimeter technology, FDSOI technology, was introduced and cutting edge development of FDSOI dosimeter was summarized. In Chapter 3, the radiation response of FDSOI metal–oxide–semiconductor field-effect transistors (MOSFETs) over a wide range of therapeutic X-ray beam energies, angles, dose ranges and applied substrate voltages were characterized. The charge collection efficiency was calculated from both technology computer aided design (TCAD) simulation and an analytical model to evaluate the radiation effect quantitatively. Based upon the experimental results, the design of passive wireless sensors using FDSOI varactors was proposed. In Chapter 4, the fabrication process of FDSOI varactors was developed at University of Minnesota. Capacitance vs. voltage (CV), current vs. voltage (IV), and TCAD modeling were used to fully understand the device characterization. The capacitance based sensing of Cobalt-60 (Co-60) gamma radiation was demonstrated using FDSOI varactors. An analytical model was developed to further understand the device response under irradiation. Based on the analytical model, the optimal working condition at different frequencies was discussed and a guide line of improving the device sensitivity was provided. TCAD simulation was also conducted to optimize the design space of FDSOI varactors for wireless sensing. In Chapter 5. 120-finger varactors with 0 V threshold voltage were fabricated using electron beam lithography with small device variability. An impedance measurement setup was built in clinical environment. Completely passive wireless radiation sensing was demonstrated using FDSOI varactor and the device showed good linearity of resonant frequency change under radiation. The possibilities to improve the performance of device were discussed. Chapter 6 summarized the progress of FDSOI dosimeter. The future development towards more reliable dosimeter with smaller sized was proposed. A novel device structure with two-dimensional material that could expend the application of solid-state radiation dosimeter was also proposed.
Subjects/Keywords: FDSOI; Radiation; Radiation dosimetry; Radiation therapy; Semiconductor device
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APA (6th Edition):
Li, Y. (2017). Passive Wireless Radiation Dosimeters for Radiation Therapy Using Fully-Depleted Silicon-on-Insulator Devices. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/185595
Chicago Manual of Style (16th Edition):
Li, Yulong. “Passive Wireless Radiation Dosimeters for Radiation Therapy Using Fully-Depleted Silicon-on-Insulator Devices.” 2017. Doctoral Dissertation, University of Minnesota. Accessed December 06, 2019.
http://hdl.handle.net/11299/185595.
MLA Handbook (7th Edition):
Li, Yulong. “Passive Wireless Radiation Dosimeters for Radiation Therapy Using Fully-Depleted Silicon-on-Insulator Devices.” 2017. Web. 06 Dec 2019.
Vancouver:
Li Y. Passive Wireless Radiation Dosimeters for Radiation Therapy Using Fully-Depleted Silicon-on-Insulator Devices. [Internet] [Doctoral dissertation]. University of Minnesota; 2017. [cited 2019 Dec 06].
Available from: http://hdl.handle.net/11299/185595.
Council of Science Editors:
Li Y. Passive Wireless Radiation Dosimeters for Radiation Therapy Using Fully-Depleted Silicon-on-Insulator Devices. [Doctoral Dissertation]. University of Minnesota; 2017. Available from: http://hdl.handle.net/11299/185595
Arizona State University
27.
Soundappa Elango, Iniyan.
Development of a Dielectrophoretic Chip for Single Cell
Electrorotation.
Degree: MS, Electrical Engineering, 2012, Arizona State University
URL: http://repository.asu.edu/items/14950
► Due to heterogeneity at the cellular level, single cell analysis (SCA) has become a necessity to study cellomics for the early detection of diseases like…
(more)
▼ Due to heterogeneity at the cellular level, single
cell analysis (SCA) has become a necessity to study cellomics for
the early detection of diseases like cancer. Development of single
cell manipulation systems is very critical for performing SCA. In
this thesis, electrorotation (ROT) chips to trap and rotate single
cells using electrokinetic forces have been developed. The ROT chip
mainly consists of a set of closely spaced metal electrodes (60µm
interspacing between opposite electrodes) that forms a closed
electric field cage (electrocage) when driven with high frequency
AC voltages. Cells were flowed through a microchannel to the
electrocage where they could be precisely trapped, levitated and
rotated in 3-D along the axis of interest. The dielectrophoresis
based ROT chip design and relevant electrokinetic effects have been
simulated using COMSOL 3.4 to optimize the design parameters. Also,
various semiconductor technology fabrication process steps have
been developed and optimized for better yield and repeatability in
the manufacture of the ROT chip. The ROT chip thus fabricated was
used to characterize rotation of single cells with respect to the
control parameters namely excitation voltage, frequency and cell
line. The longevity of cell rotation under electric fields has been
probed. Also, the Joule heating inside the ROT chip due to applied
voltage has been characterized to know the thermal stress on the
cells. The major advantages of the ROT chip developed are precise
electrorotation of cells, simple design and straight forward
fabrication process.
Subjects/Keywords: Electrical engineering; Biomedical engineering; Cell electrorotation; Dielectrophoresis; ROT device
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APA (6th Edition):
Soundappa Elango, I. (2012). Development of a Dielectrophoretic Chip for Single Cell
Electrorotation. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/14950
Chicago Manual of Style (16th Edition):
Soundappa Elango, Iniyan. “Development of a Dielectrophoretic Chip for Single Cell
Electrorotation.” 2012. Masters Thesis, Arizona State University. Accessed December 06, 2019.
http://repository.asu.edu/items/14950.
MLA Handbook (7th Edition):
Soundappa Elango, Iniyan. “Development of a Dielectrophoretic Chip for Single Cell
Electrorotation.” 2012. Web. 06 Dec 2019.
Vancouver:
Soundappa Elango I. Development of a Dielectrophoretic Chip for Single Cell
Electrorotation. [Internet] [Masters thesis]. Arizona State University; 2012. [cited 2019 Dec 06].
Available from: http://repository.asu.edu/items/14950.
Council of Science Editors:
Soundappa Elango I. Development of a Dielectrophoretic Chip for Single Cell
Electrorotation. [Masters Thesis]. Arizona State University; 2012. Available from: http://repository.asu.edu/items/14950
Arizona State University
28.
Kumar, Viswanathan Naveen.
Mobility Modeling of Gallium Nitride Nanowires.
Degree: Electrical Engineering, 2017, Arizona State University
URL: http://repository.asu.edu/items/46185
► Semiconductor nanowires have the potential to emerge as the building blocks of next generation field-effect transistors, logic gates, solar cells and light emitting diodes. Use…
(more)
▼ Semiconductor nanowires have the potential to emerge
as the building blocks of next generation field-effect transistors,
logic gates, solar cells and light emitting diodes. Use of Gallium
Nitride (GaN) and other wide bandgap materials combines the
advantages of III-nitrides along with the enhanced mobility offered
by 2-dimensional confinement present in nanowires. The focus of
this thesis is on developing a low field mobility model for a GaN
nanowire using Ensemble Monte Carlo (EMC) techniques. A 2D
Schrödinger-Poisson solver and a one-dimensional Monte Carlo solver
is developed for an Aluminum Gallium Nitride/Gallium Nitride
Heterostructure nanowire. A GaN/AlN/AlGaN heterostructure device is
designed which creates 2-dimensional potential well for electrons.
The nanowire is treated as a quasi-1D system in this work. A
self-consistent 2D Schrödinger-Poisson solver is designed which
determines the subband energies and the corresponding wavefunctions
of the confined system. Three scattering mechanisms: acoustic
phonon scattering, polar optical phonon scattering and
piezoelectric scattering are considered to account for the electron
phonon interactions in the system. Overlap integrals and 1D
scattering rate expressions are derived for all the mechanisms
listed. A generic one-dimensional Monte Carlo solver is also
developed. Steady state results from the 1D Monte Carlo solver are
extracted to determine the low field mobility of the GaN
nanowires.
Subjects/Keywords: Electrical engineering; Gallium Nitride; Mobility; Monte Carlo; Nanowires; Semiconductor Device Modeling
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APA (6th Edition):
Kumar, V. N. (2017). Mobility Modeling of Gallium Nitride Nanowires. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/46185
Chicago Manual of Style (16th Edition):
Kumar, Viswanathan Naveen. “Mobility Modeling of Gallium Nitride Nanowires.” 2017. Masters Thesis, Arizona State University. Accessed December 06, 2019.
http://repository.asu.edu/items/46185.
MLA Handbook (7th Edition):
Kumar, Viswanathan Naveen. “Mobility Modeling of Gallium Nitride Nanowires.” 2017. Web. 06 Dec 2019.
Vancouver:
Kumar VN. Mobility Modeling of Gallium Nitride Nanowires. [Internet] [Masters thesis]. Arizona State University; 2017. [cited 2019 Dec 06].
Available from: http://repository.asu.edu/items/46185.
Council of Science Editors:
Kumar VN. Mobility Modeling of Gallium Nitride Nanowires. [Masters Thesis]. Arizona State University; 2017. Available from: http://repository.asu.edu/items/46185
Arizona State University
29.
Pandit, Vedhas.
Cost-Effective Integrated Wireless Monitoring of Wafer
Cleanliness Using SOI Technology.
Degree: MS, Electrical Engineering, 2010, Arizona State University
URL: http://repository.asu.edu/items/8800
► The thesis focuses on cost-efficient integration of the electro-chemical residue sensor (ECRS), a novel sensor developed for the in situ and real-time measurement of the…
(more)
▼ The thesis focuses on cost-efficient integration of
the electro-chemical residue sensor (ECRS), a novel sensor
developed for the in situ and real-time measurement of the residual
impurities left on the wafer surface and in the fine structures of
patterned wafers during typical rinse processes, and wireless
transponder circuitry that is based on RFID technology. The
proposed technology uses only the NMOS FD-SOI transistors with
amorphous silicon as active material with silicon nitride as a gate
dielectric. The proposed transistor was simulated under the SILVACO
ATLAS Simulation Framework. A parametric study was performed to
study the impact of different gate lengths (6 μm to 56
μm), electron motilities (0.1 cm2/Vs to 1 cm2/Vs), gate
dielectric (SiO2 and SiNx) and active materials (a-Si and poly-Si)
specifications. Level-1 models, that are accurate enough to acquire
insight into the circuit behavior and perform preliminary design,
were successfully constructed by analyzing drain current and gate
to node capacitance characteristics against drain to source and
gate to source voltages. Using the model corresponding to SiNx as
gate dielectric, a-Si:H as active material with electron mobility
equal to 0.4 cm2/V-sec, an operational amplifier was designed and
was tested in unity gain configuration at modest load-frequency
specifications.
Subjects/Keywords: Electrical Engineering; amorphous silicon TFT; cost effective integration; device simulation modeling; in situ contamination measurement; silvaco atlas deckbuild; SOI device design fabrication
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APA (6th Edition):
Pandit, V. (2010). Cost-Effective Integrated Wireless Monitoring of Wafer
Cleanliness Using SOI Technology. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/8800
Chicago Manual of Style (16th Edition):
Pandit, Vedhas. “Cost-Effective Integrated Wireless Monitoring of Wafer
Cleanliness Using SOI Technology.” 2010. Masters Thesis, Arizona State University. Accessed December 06, 2019.
http://repository.asu.edu/items/8800.
MLA Handbook (7th Edition):
Pandit, Vedhas. “Cost-Effective Integrated Wireless Monitoring of Wafer
Cleanliness Using SOI Technology.” 2010. Web. 06 Dec 2019.
Vancouver:
Pandit V. Cost-Effective Integrated Wireless Monitoring of Wafer
Cleanliness Using SOI Technology. [Internet] [Masters thesis]. Arizona State University; 2010. [cited 2019 Dec 06].
Available from: http://repository.asu.edu/items/8800.
Council of Science Editors:
Pandit V. Cost-Effective Integrated Wireless Monitoring of Wafer
Cleanliness Using SOI Technology. [Masters Thesis]. Arizona State University; 2010. Available from: http://repository.asu.edu/items/8800
NSYSU
30.
Lin, Chih-chia.
Two Doping Less Bridge Single-Transistor DRAMs for Low-Power Supply and High-Speed Application.
Degree: Master, Electrical Engineering, 2017, NSYSU
URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715117-151732
► In this thesis, we propose two architectures of Single-Transistor Dynamic Random Access Memory (1T-DRAM) using dopingless bridge. This is also the first time using the…
(more)
▼ In this thesis, we propose two architectures of Single-Transistor Dynamic Random Access Memory (1T-DRAM) using dopingless bridge. This is also the first time using the Dopingless Bridge as 1T-DRAM reading current channel.
The first architecture is called Dopingless Bridge Single-Transistor Dynamic Random Access Memory (DLB DRAM). We utilize Raised body in the storing region. It can increase the size of storing area without occupying additional area, thus increasing storing excess carriers. It also let storing carriers far away from the recombination of reading and PN junctions to extend the retention time. Writing operation needs the most power while DRAM is working. At writing operation, Dopingless Bridge mode saves about 44.2% of the power consumption compared to the N-type current bridge mode under the same architecture and bias. Its write time can less than 2 ns. On the performance of programming window is 39.74 μA/μm and performance of retention time can over than 100 ms. The
device even can be applied at low power supply operation of 1.0 V.
The second
device is Vertical Dopingless Bridge Single-Transistor Dynamic Random Access Memory (VDLB 1T-DRAM). It can decrease the recombination while reading operation and avoid the problem of middle oxide self-alignment in DLB 1T-DRAM. The vertical direction of channel can reduce the area occupied by
device on the wafer. It also is the trend of developing
device in recent years. The performance of programming window is 31.2 μA/μm. The performance of retention time reach 800 ms at room temperature 300 K and 63.8 ms at 358 K.The writing time is not affected by the channel concentration and reduces on of the variability in
device stability. Compared to the N-type current bridge, using of Dopingless Bridge reduces about 52.4% power consumption in this
device. In addition, the operating voltage is less than 1.2 V and has 2 ns fast write time.
Advisors/Committee Members: Jinn-Shyan Wang (chair), Feng-Der Chin (chair), Kow-Ming Chang (chair), Jyi-Tsong Lin (committee member), Chee-Wee Liu (chair).
Subjects/Keywords: Low Power Supply; Fast Operation; Vertical Device; 1T-DRAM; Dopingless Bridge; Raised Body Structure
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APA (6th Edition):
Lin, C. (2017). Two Doping Less Bridge Single-Transistor DRAMs for Low-Power Supply and High-Speed Application. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715117-151732
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Chicago Manual of Style (16th Edition):
Lin, Chih-chia. “Two Doping Less Bridge Single-Transistor DRAMs for Low-Power Supply and High-Speed Application.” 2017. Thesis, NSYSU. Accessed December 06, 2019.
http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715117-151732.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
MLA Handbook (7th Edition):
Lin, Chih-chia. “Two Doping Less Bridge Single-Transistor DRAMs for Low-Power Supply and High-Speed Application.” 2017. Web. 06 Dec 2019.
Vancouver:
Lin C. Two Doping Less Bridge Single-Transistor DRAMs for Low-Power Supply and High-Speed Application. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Dec 06].
Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715117-151732.
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
Council of Science Editors:
Lin C. Two Doping Less Bridge Single-Transistor DRAMs for Low-Power Supply and High-Speed Application. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0715117-151732
Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
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