subject:(Czochralski)

NSYSU

1. Tsao, Pai-chun. Study on the Czochralski growth and phase inversion of LiAlO2 single crystals.

Degree: Master, Materials Science and Engineering, 2006, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0607106-112058

► Three LiAlO2 single crystals were grown by the conventional Czochralski method under the ambient pressure with pull rate with 2.0~3.0 mm/min, rotation rate with 20~30… (more)

Subjects/Keywords: Czochralski

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Tsao, P. (2006). Study on the Czochralski growth and phase inversion of LiAlO2 single crystals. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0607106-112058

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Tsao, Pai-chun. “Study on the Czochralski growth and phase inversion of LiAlO2 single crystals.” 2006. Thesis, NSYSU. Accessed March 02, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0607106-112058.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Tsao, Pai-chun. “Study on the Czochralski growth and phase inversion of LiAlO2 single crystals.” 2006. Web. 02 Mar 2021.

Vancouver:

Tsao P. Study on the Czochralski growth and phase inversion of LiAlO2 single crystals. [Internet] [Thesis]. NSYSU; 2006. [cited 2021 Mar 02]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0607106-112058.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tsao P. Study on the Czochralski growth and phase inversion of LiAlO2 single crystals. [Thesis]. NSYSU; 2006. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0607106-112058

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

2. Andreeta, Jose Pedro. Crescimento de monocristais de LiF pelos métodos Bridgmann e Czochralski.

Degree: Mestrado, Física Aplicada, 1979, University of São Paulo

URL: http://www.teses.usp.br/teses/disponiveis/54/54132/tde-01062010-152200/ ;

►

Este trabalho descreve a construção e operação de dois fornos especiais para crescimento de monocristais pelas técnicas de Bridgmann e Czochralski. Vários cristais de LiF… (more)

Subjects/Keywords: Bridgmann; Bridgmann; Czochralski; Czochralski; Monocristais; Single crystals

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Andreeta, J. P. (1979). Crescimento de monocristais de LiF pelos métodos Bridgmann e Czochralski. (Masters Thesis). University of São Paulo. Retrieved from http://www.teses.usp.br/teses/disponiveis/54/54132/tde-01062010-152200/ ;

Chicago Manual of Style (16^th Edition):

Andreeta, Jose Pedro. “Crescimento de monocristais de LiF pelos métodos Bridgmann e Czochralski.” 1979. Masters Thesis, University of São Paulo. Accessed March 02, 2021. http://www.teses.usp.br/teses/disponiveis/54/54132/tde-01062010-152200/ ;.

MLA Handbook (7^th Edition):

Andreeta, Jose Pedro. “Crescimento de monocristais de LiF pelos métodos Bridgmann e Czochralski.” 1979. Web. 02 Mar 2021.

Vancouver:

Andreeta JP. Crescimento de monocristais de LiF pelos métodos Bridgmann e Czochralski. [Internet] [Masters thesis]. University of São Paulo; 1979. [cited 2021 Mar 02]. Available from: http://www.teses.usp.br/teses/disponiveis/54/54132/tde-01062010-152200/ ;.

Council of Science Editors:

Andreeta JP. Crescimento de monocristais de LiF pelos métodos Bridgmann e Czochralski. [Masters Thesis]. University of São Paulo; 1979. Available from: http://www.teses.usp.br/teses/disponiveis/54/54132/tde-01062010-152200/ ;

3. Li, Hui. Bubbles propagation in undoped and Titanium (Ti3+)-doped sapphire crystals grown by Czochralski (Cz) technique : Propagation des bulles dans le saphir non dopé et dopé titane (Ti3+) cristallisé par la technique Czochralski (Cz).

Degree: Docteur es, Chimie, 2014, Université Claude Bernard – Lyon I

URL: http://www.theses.fr/2014LYO10327

►

En dépit de leurs simplicités chimiques, de leurs fusion congruente, de leurs performances mécaniques et de leurs propriétés optiques, les monocristaux de saphir contiennent comme… (more)

▼

En dépit de leurs simplicités chimiques, de leurs fusion congruente, de leurs performances mécaniques et de leurs propriétés optiques, les monocristaux de saphir contiennent comme défauts des bulles aussi connus sous le nom de micro-vides. Quelle que soit la technologie de croissance, les cristaux obtenus sont caractérisés par la présence de micro-et macro-bulles qui affectent leurs qualités optiques et mécaniques limitant ainsi leurs applications. Ces bulles dégradent les propriétés optiques et l'efficacité des lasers produits par une réduction de la transparence des saphirs; elles induisent également des défauts de surface pendant le processus de polissage. Afin d'améliorer la qualité des cristaux, il est important d'éliminer les bulles, de connaître la raison de leurs formations, les causes de leurs propagations, de leurs constitutions, et de leurs diffusions dans le cristal. Nous avons étudié la distribution des bulles et leurs tailles dans les cristaux de saphir non dopés et dopés titane obtenus par la technique Czochralski (Cz). Les données expérimentales recueillies ont permis de connaître l'effet de différents paramètres de croissance sur la distribution, la densité et la taille des bulles. La propagation des bulles et leurs distributions dans les cristaux ne sont pas influencées par le type de germe. Si les vitesses de tirages augmentent, le diamètre des bulles diminuent et leurs densités augmentent. Les bulles formées dans le cristal de saphir sont influencées par la matière formant la charge de départ. L’utilisation de saphirs craquelés comme charge de départ pourrait être une bonne façon de minimiser la création de bulles et de limiter leurs propagations. Les résultats obtenus dans le cadre de cette thèse décrivent l'ensemble des phénomènes impliqués lors de l'incorporation de bulles dans les cristaux de saphir non dopés et dopés titane

In spite of the chemical simplicity, the congruent melt behaviour and it’s performed mechanical and optical properties sapphire single crystals contain bubbles defects also known as micro-voids. Whatever the growth technology, the grown crystals are characterized by the presence of micro and macro bubbles which affect the optical and mechanical quality of the crystal limiting their application. They degrade the optical properties and the laser efficiency by reduction of the transparency; they also induce surface defects during substrate polishing process. In order to improve the crystal quality, it is important to eliminate bubbles defects and know the reason of their formation, the causes of their propagation, their incorporation and their distribution in the crystal. We have studied bubbles distribution and their size in undoped and Ti-doped sapphire crystals grown by Czochralski (Cz) technique. The collected experimental data made it possible to know the effect of several growth parameters on the distribution, the density and the size of the bubbles. The bubbles propagation and distribution in the crystal are not influenced by the seed type. If the pulling rate…

Advisors/Committee Members: Lebbou, Kheirreddine (thesis director), Brenier, Alain (thesis director).

Subjects/Keywords: Bulles; Czochralski; Saphir; Cristal; Propagation; Interface; Propriétés optiques; Bubbles; Czochralski; Sapphire; Crystal; Propagation; Interface; Opticalproperties; 548

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Li, H. (2014). Bubbles propagation in undoped and Titanium (Ti3+)-doped sapphire crystals grown by Czochralski (Cz) technique : Propagation des bulles dans le saphir non dopé et dopé titane (Ti3+) cristallisé par la technique Czochralski (Cz). (Doctoral Dissertation). Université Claude Bernard – Lyon I. Retrieved from http://www.theses.fr/2014LYO10327

Chicago Manual of Style (16^th Edition):

Li, Hui. “Bubbles propagation in undoped and Titanium (Ti3+)-doped sapphire crystals grown by Czochralski (Cz) technique : Propagation des bulles dans le saphir non dopé et dopé titane (Ti3+) cristallisé par la technique Czochralski (Cz).” 2014. Doctoral Dissertation, Université Claude Bernard – Lyon I. Accessed March 02, 2021. http://www.theses.fr/2014LYO10327.

MLA Handbook (7^th Edition):

Li, Hui. “Bubbles propagation in undoped and Titanium (Ti3+)-doped sapphire crystals grown by Czochralski (Cz) technique : Propagation des bulles dans le saphir non dopé et dopé titane (Ti3+) cristallisé par la technique Czochralski (Cz).” 2014. Web. 02 Mar 2021.

Vancouver:

Li H. Bubbles propagation in undoped and Titanium (Ti3+)-doped sapphire crystals grown by Czochralski (Cz) technique : Propagation des bulles dans le saphir non dopé et dopé titane (Ti3+) cristallisé par la technique Czochralski (Cz). [Internet] [Doctoral dissertation]. Université Claude Bernard – Lyon I; 2014. [cited 2021 Mar 02]. Available from: http://www.theses.fr/2014LYO10327.

Council of Science Editors:

Li H. Bubbles propagation in undoped and Titanium (Ti3+)-doped sapphire crystals grown by Czochralski (Cz) technique : Propagation des bulles dans le saphir non dopé et dopé titane (Ti3+) cristallisé par la technique Czochralski (Cz). [Doctoral Dissertation]. Université Claude Bernard – Lyon I; 2014. Available from: http://www.theses.fr/2014LYO10327

Brno University of Technology

4. Válek, Lukáš. Microdefects in Czochralski Silicon: Microdefects in Czochralski Silicon.

Degree: 2019, Brno University of Technology

URL: http://hdl.handle.net/11012/20302

► The doctoral thesis deals with analyses of defects in single crystals of Czochralski silicon doped with boron. Mechanisms of formation of circular patterns of oxidation… (more)

Subjects/Keywords: Křemík; Czochralski; bór; defekty; vrstevné chyby; precipitace kyslíku; Czochralski silicon; boron; microdefects; oxidation induced stacking faults; oxygen precipitation

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Válek, L. (2019). Microdefects in Czochralski Silicon: Microdefects in Czochralski Silicon. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/20302

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Válek, Lukáš. “Microdefects in Czochralski Silicon: Microdefects in Czochralski Silicon.” 2019. Thesis, Brno University of Technology. Accessed March 02, 2021. http://hdl.handle.net/11012/20302.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Válek, Lukáš. “Microdefects in Czochralski Silicon: Microdefects in Czochralski Silicon.” 2019. Web. 02 Mar 2021.

Vancouver:

Válek L. Microdefects in Czochralski Silicon: Microdefects in Czochralski Silicon. [Internet] [Thesis]. Brno University of Technology; 2019. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/11012/20302.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Válek L. Microdefects in Czochralski Silicon: Microdefects in Czochralski Silicon. [Thesis]. Brno University of Technology; 2019. Available from: http://hdl.handle.net/11012/20302

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

5. Chen, Yingwei. Study on the Growth and Optical Properties of Large-Sized Highly-Doped Nd:YAG Crystal by Czochralski Technique.

Degree: Master, Materials and Optoelectronic Science, 2012, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0807112-062150

► ããThis paper mainly focuses on the discussion about how to grow a large-sized highly-doped laser crystal- Neodymium yttrium aluminum garnet( {NdxY1-x}3Al5O3; Nd:YAG). The higher concentration… (more)

Subjects/Keywords: Laser crystal; Nd:YAG; Solid state laser; Single crystal growth; Czochralski method

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Chen, Y. (2012). Study on the Growth and Optical Properties of Large-Sized Highly-Doped Nd:YAG Crystal by Czochralski Technique. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0807112-062150

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Chen, Yingwei. “Study on the Growth and Optical Properties of Large-Sized Highly-Doped Nd:YAG Crystal by Czochralski Technique.” 2012. Thesis, NSYSU. Accessed March 02, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0807112-062150.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Chen, Yingwei. “Study on the Growth and Optical Properties of Large-Sized Highly-Doped Nd:YAG Crystal by Czochralski Technique.” 2012. Web. 02 Mar 2021.

Vancouver:

Chen Y. Study on the Growth and Optical Properties of Large-Sized Highly-Doped Nd:YAG Crystal by Czochralski Technique. [Internet] [Thesis]. NSYSU; 2012. [cited 2021 Mar 02]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0807112-062150.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Study on the Growth and Optical Properties of Large-Sized Highly-Doped Nd:YAG Crystal by Czochralski Technique. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0807112-062150

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

New Jersey Institute of Technology

6. Basnyat, Prakash M. Investigations into b-o defect formation-dissociation in cz-silicon and their effect on solar cell performance.

Degree: PhD, Physics, 2013, New Jersey Institute of Technology

URL: https://digitalcommons.njit.edu/dissertations/359

► About 30% of the total market share of industrial manufacture of silicon solar cells is taken by single crystalline Czochralski (CZ) grown wafers. The… (more)

▼ About 30% of the total market share of industrial manufacture of silicon solar cells is taken by single crystalline Czochralski (CZ) grown wafers. The efficiency of solar cells fabricated on boron-doped Czochralski silicon degrades due to the formation of metastable defects when excess electrons are created by illumination or minority carrier injection during forward bias. The recombination path can be removed by annealing the cell at about 200° C but recombination returns on exposure to light. Several mono-crystalline and multi-crystalline solar cells have been characterized by methods such as laser beam induced current (LBIC), Four-Probe electrical resistivity etc. to better understand the light induced degradation (LID) effect in silicon solar cells. All the measurements are performed as a function of light soaking time. Annealed states are produced by exposing the cells/wafer to temperature above 200° C for 30 minutes and light soaked state was produced by exposure to 1000 W/m2 light using AM1.5 solar simulator for 72 hours. Dark I-V data are analyzed by a software developed at NREL. This study shows that LID, typically, has two components- a bulk component that arises from boron-oxygen defects and a surface component that appears to be due to the SiNx:H-Si interface. With the analysis of dark saturation current (J02), it is seen that the surface LID increases with an increase in the q/2kT component. Results show that cell performance due to bulk effect is fully recovered upon annealing where as surface LID does not recover fully. This statement is also verified by the study of mc- silicon solar cells. Multi-crystalline silicon solar cell has very low oxygen content and, therefore, recombination sites will not be able to form. This shows that there is no bulk degradation in mc- Si solar cells but they exhibit surface degradation. The results suggest that a typical Cz-silicon solar cell with an initial efficiency of — 18% could suffer a reduction in efficiency to — 17.5% after the formation of a metastable defect, out of which — 0.4% comes from a bulk effect and —0.1 % is linked to a surface effect. Advisors/Committee Members: N. M. Ravindra, Bhushan L. Sopori, Anthony Fiory.

Subjects/Keywords: Czochralski; Lid; Silicon; Solar cells; Simulator; Photovoltaic; Other Physics

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Basnyat, P. M. (2013). Investigations into b-o defect formation-dissociation in cz-silicon and their effect on solar cell performance. (Doctoral Dissertation). New Jersey Institute of Technology. Retrieved from https://digitalcommons.njit.edu/dissertations/359

Chicago Manual of Style (16^th Edition):

Basnyat, Prakash M. “Investigations into b-o defect formation-dissociation in cz-silicon and their effect on solar cell performance.” 2013. Doctoral Dissertation, New Jersey Institute of Technology. Accessed March 02, 2021. https://digitalcommons.njit.edu/dissertations/359.

MLA Handbook (7^th Edition):

Basnyat, Prakash M. “Investigations into b-o defect formation-dissociation in cz-silicon and their effect on solar cell performance.” 2013. Web. 02 Mar 2021.

Vancouver:

Basnyat PM. Investigations into b-o defect formation-dissociation in cz-silicon and their effect on solar cell performance. [Internet] [Doctoral dissertation]. New Jersey Institute of Technology; 2013. [cited 2021 Mar 02]. Available from: https://digitalcommons.njit.edu/dissertations/359.

Council of Science Editors:

Basnyat PM. Investigations into b-o defect formation-dissociation in cz-silicon and their effect on solar cell performance. [Doctoral Dissertation]. New Jersey Institute of Technology; 2013. Available from: https://digitalcommons.njit.edu/dissertations/359

University of New South Wales

7. Nampalli, Nitin. Characterisation and passivation of boron-oxygen defects in p-type Czochralski silicon.

Degree: Photovoltaics & Renewable Energy Engineering, 2017, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/58818 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:47634/SOURCE02?view=true

► The boron-oxygen (BO) defect is ubiquitously present in p-type Czochralski material and is known to cause significant carrier induced degradation in commercial solar cells. Despite… (more)

▼ The boron-oxygen (BO) defect is ubiquitously present in p-type Czochralski material and is known to cause significant carrier induced degradation in commercial solar cells. Despite being well-known for years, the nature and behaviour of the defect are not yet completely understood. This thesis aims to shed new insights into the properties of the BO defect and the mechanisms underlying known processes that can be used to mitigate its effects.This thesis begins with a review of the known properties and behaviours of the BO defect, and a summary of the key gaps in knowledge. Statistical regression-based methods to characterise the recombination properties of the defect at room temperature and at elevated temperatures using injection-dependent lifetime spectroscopy (IDLS) and temperature- and injection-dependent lifetime spectroscopy (TIDLS) are presented and applied to independently confirm the trap level (EC – (0.41 ± 0.01) eV), the associated capture cross section ratio (11.5 ± 1.0) and the power exponent of temperature dependence of the capture cross sections (-2.3 ± 0.1) associated with the BO donor level in p-type Czochralski wafers. Empirical models to determine effective carrier lifetime at elevated temperatures are also developed and applied to unambiguously determine the carrier dependence of the rate constants of degradation and annealing. These are then explicitly accounted for to obtain improved estimates of the associated activation energies and characteristic frequencies based on fits to datasets in this and other works in the literature.Also investigated in this thesis are various proposed mechanisms underlying permanent deactivation of the BO defect via rapid thermal annealing and via regeneration (illuminated annealing). It is concluded that the two effects occur independently and are likely unrelated. Thermal deactivation is explained as defect dissociation into precursors, whereas regeneration is concluded to be hydrogen passivation of the fully formed defect. Finally, the new insights gained into the nature of the BO defect and the configurational changes that occur during defect state transitions are discussed in the context of existing literature. Advisors/Committee Members: Abbott, Malcolm, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Wenham, Stuart, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Edwards, Matthew, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW.

Subjects/Keywords: Carrier lifetime; Boron-oxygen defect; Czochralski silicon; Lifetime spectroscopy; Hydrogen passivation

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Nampalli, N. (2017). Characterisation and passivation of boron-oxygen defects in p-type Czochralski silicon. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/58818 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:47634/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Nampalli, Nitin. “Characterisation and passivation of boron-oxygen defects in p-type Czochralski silicon.” 2017. Doctoral Dissertation, University of New South Wales. Accessed March 02, 2021. http://handle.unsw.edu.au/1959.4/58818 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:47634/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Nampalli, Nitin. “Characterisation and passivation of boron-oxygen defects in p-type Czochralski silicon.” 2017. Web. 02 Mar 2021.

Vancouver:

Nampalli N. Characterisation and passivation of boron-oxygen defects in p-type Czochralski silicon. [Internet] [Doctoral dissertation]. University of New South Wales; 2017. [cited 2021 Mar 02]. Available from: http://handle.unsw.edu.au/1959.4/58818 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:47634/SOURCE02?view=true.

Council of Science Editors:

Nampalli N. Characterisation and passivation of boron-oxygen defects in p-type Czochralski silicon. [Doctoral Dissertation]. University of New South Wales; 2017. Available from: http://handle.unsw.edu.au/1959.4/58818 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:47634/SOURCE02?view=true

8. Martinez, André Luiz. Síntese e crescimento de cristal da fase BiNbO4.

Degree: PhD, Física Aplicada, 2006, University of São Paulo

URL: http://www.teses.usp.br/teses/disponiveis/76/76132/tde-14012008-170719/ ;

►

Muitos trabalhos científicos têm sido publicados relatando os diferentes métodos de preparação e as propriedades de corpos cerâmicos e filmes finos de niobato de bismuto… (more)

▼

Muitos trabalhos científicos têm sido publicados relatando os diferentes métodos de preparação e as propriedades de corpos cerâmicos e filmes finos de niobato de bismuto (BiNbO4 - BN). Provido de características como alta permissividade dielétrica e excelentes propriedades ferroelétricas, esse composto tem despertado o interesse da comunidade científica. No entanto, uma literatura restrita e conflitante é encontrada sobre esse composto na forma de monocristais. A ocorrência de transições de fase estrutural mostrou-se a maior dificuldade na preparação desses compostos como monocristais. A potencial aplicação como material de dispositivos eletrônicos, devido suas propriedades ferroelétricas, assim como o desafio da preparação de materiais que apresentam transição estrutural de fase, serviram de motivação para a realização desse estudo. O objetivo desse trabalho foi a realização do estudo da síntese e do crescimento de cristais de BiNbO4. Para isso foram utilizadas as técnicas de Czochralski (CZ), Laser Heated Pedestal Growth (LHPG) e fluxo. As dificuldades encontradas quando utilizada cada uma das técnicas, assim como suas variações, foram discutidas. A transição estrutural de fase (\'alfa\'-BiNbO4 - \'beta\'-BiNbO4) mostrou-se uma barreira na preparação desse tipo de material com qualidade óptica. O comportamento da permissividade dielétrica (\'épsilon\') e fator de perda (tg\'teta\') em função da temperatura e freqüência foram determinados através de estudos de espectroscopia de impedância.

Many scientific works have been published reporting different procedures to the preparation and properties of ceramic bodies and thin films of bismuth niobate (BiNbO4 - BN). Characterized by high dielectric permittivity and excellent ferroelectric properties, this compound has attracted the interest of the scientific community. However, a restricted and conflict literature is found about this compound in the single crystal form. The appearance of structure phase transitions was demonstrated in the most difficulty for the preparation of this compounds as single crystals. The potential applications as electronic device material, due its ferroelectrics properties, as well as the challenge to preparation materials which indicate structural transition were used as motivations to the development of this work. The main purposes of this work were to make synthesis and the crystal growth of BiNbO4. For this propose, techniques as Czochralski (CZ), Laser Heated Pedestal Growth (LHPG) and self-flux were used. The difficulties found when used each one of the techniques and their variations are discussed. The structural phase transition (\'alfa\'-BiNbO4 - \'beta\'-BiNbO4) was the principal barrier in the preparation of this material with optical quality. The behavior of dielectric permittivity (\'épsilon)́ and lost factor (tgt́eta\') by the temperature and frequency were determined through studies of Impedance Spectroscopy

Advisors/Committee Members: Hernandes, Antonio Carlos.

Subjects/Keywords: BiNb04; BinNbO4; Crescimentos de cristais; Cristal growth; Czochralski; Czochralski; LHPG; LHPG

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Martinez, A. L. (2006). Síntese e crescimento de cristal da fase BiNbO4. (Doctoral Dissertation). University of São Paulo. Retrieved from http://www.teses.usp.br/teses/disponiveis/76/76132/tde-14012008-170719/ ;

Chicago Manual of Style (16^th Edition):

Martinez, André Luiz. “Síntese e crescimento de cristal da fase BiNbO4.” 2006. Doctoral Dissertation, University of São Paulo. Accessed March 02, 2021. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-14012008-170719/ ;.

MLA Handbook (7^th Edition):

Martinez, André Luiz. “Síntese e crescimento de cristal da fase BiNbO4.” 2006. Web. 02 Mar 2021.

Vancouver:

Martinez AL. Síntese e crescimento de cristal da fase BiNbO4. [Internet] [Doctoral dissertation]. University of São Paulo; 2006. [cited 2021 Mar 02]. Available from: http://www.teses.usp.br/teses/disponiveis/76/76132/tde-14012008-170719/ ;.

Council of Science Editors:

Martinez AL. Síntese e crescimento de cristal da fase BiNbO4. [Doctoral Dissertation]. University of São Paulo; 2006. Available from: http://www.teses.usp.br/teses/disponiveis/76/76132/tde-14012008-170719/ ;

Universitat Rovira i Virgili

9. Zhang, Xuzhao. Crystals growth and laser properties of Nd:CNGS and Yb:CNGS.

Degree: Departament d'Enginyeria Química, 2018, Universitat Rovira i Virgili

URL: http://hdl.handle.net/10803/670355

► Czochralski method was used to growing Nd:CNGS and Yb:CNGS crystals,the growth fundamentals and problems encountered during the crystal growth were analyzed. Structure and thermal properties… (more)

Subjects/Keywords: Mètode Czochralski; Espectroscòpia òptica; Làser i làser polsat; Método Czochralski; Láser y láser pulsado; Czochiralski method; Optical spectroscopy; Laser and pulsed laser; Ciències; 548

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Zhang, X. (2018). Crystals growth and laser properties of Nd:CNGS and Yb:CNGS. (Thesis). Universitat Rovira i Virgili. Retrieved from http://hdl.handle.net/10803/670355

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Zhang, Xuzhao. “Crystals growth and laser properties of Nd:CNGS and Yb:CNGS.” 2018. Thesis, Universitat Rovira i Virgili. Accessed March 02, 2021. http://hdl.handle.net/10803/670355.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Zhang, Xuzhao. “Crystals growth and laser properties of Nd:CNGS and Yb:CNGS.” 2018. Web. 02 Mar 2021.

Vancouver:

Zhang X. Crystals growth and laser properties of Nd:CNGS and Yb:CNGS. [Internet] [Thesis]. Universitat Rovira i Virgili; 2018. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/10803/670355.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang X. Crystals growth and laser properties of Nd:CNGS and Yb:CNGS. [Thesis]. Universitat Rovira i Virgili; 2018. Available from: http://hdl.handle.net/10803/670355

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

10. Peng, Chih-Hao. Structural Properties and Two Photon Luminescence Study of Yb:YAG Single Crystal.

Degree: PhD, Physics, 2012, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0709112-011414

► High quality YbxY1-xAG (0≤x≤1) single crystals were grown by using the Czochralski method. The structural properties of YbxY1-xAG (0≤x≤1) single crystals were also investigated using… (more)

Subjects/Keywords: Yb:YAG; Melt growth; Czochralski method; EXAFS; Two-photon Luminescense; Frequency up-conversion

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Peng, C. (2012). Structural Properties and Two Photon Luminescence Study of Yb:YAG Single Crystal. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0709112-011414

Chicago Manual of Style (16^th Edition):

Peng, Chih-Hao. “Structural Properties and Two Photon Luminescence Study of Yb:YAG Single Crystal.” 2012. Doctoral Dissertation, NSYSU. Accessed March 02, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0709112-011414.

MLA Handbook (7^th Edition):

Peng, Chih-Hao. “Structural Properties and Two Photon Luminescence Study of Yb:YAG Single Crystal.” 2012. Web. 02 Mar 2021.

Vancouver:

Peng C. Structural Properties and Two Photon Luminescence Study of Yb:YAG Single Crystal. [Internet] [Doctoral dissertation]. NSYSU; 2012. [cited 2021 Mar 02]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0709112-011414.

Council of Science Editors:

Peng C. Structural Properties and Two Photon Luminescence Study of Yb:YAG Single Crystal. [Doctoral Dissertation]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0709112-011414

11. Luukka, Panja-Riina. Characterization of Czochralski Silicon Detectors.

Degree: 2006, Helsinki University of Technology

URL: http://lib.tkk.fi/Diss/2006/isbn9521029560/

►

This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation… (more)

▼

This thesis describes the characterization of irradiated and non-irradiated segmented detectors made of high-resistivity (>1 kΩcm) magnetic Czochralski (MCZ) silicon. It is shown that the radiation hardness (RH) of the protons of these detectors is higher than that of devices made of traditional materials such as Float Zone (FZ) silicon or Diffusion Oxygenated Float Zone (DOFZ) silicon due to the presence of intrinsic oxygen (> 5 × 1017 cm−3). The MCZ devices therefore present an interesting alternative for future high-energy physics experiments. In the large hadron collider (LHC), the RH of the detectors is a critical issue due to the high luminosity (1034 cm−2s−1) corresponding to the expected total fluencies of fast hadrons above 1015 cm−2. This RH improvement is important since radiation damage in the detector bulk material reduces the detector performance and because some of the devices produced from standard detector-grade silicon, e.g. FZ silicon with negligible oxygen concentration, might not survive the planned operational period of the LHC experiments. In this work, segmented detectors and test structures were processed, measured, irradiated with different particles (protons of different energies, neutrons and high-energy electrons) and tested with a 60Co gamma source and with high-energy muon and pion beams. The electrical characterizations show that, for proton irradiation, the MCZ silicon is significantly radiation harder than traditionally used detector materials. In gamma irradiation, MCZ silicon detectors behave similarly to the DOFZ silicon detectors. For neutron radiation, there is only a small difference between MCZ silicon and the reference devices made of standard FZ silicon. The beam test results with the full-size detectors show that the properties of the high-resistivity MCZ silicon are suitable for particle detection both before and after heavy proton irradiation.

Internal report / Helsinki Institute of Physics, ISSN 1455-0563; 2006-04

Advisors/Committee Members: Helsinki University of Technology, Department of Electrical and Communications Engineering, Helsinki Institute of Physics.

Subjects/Keywords: silicon particle detectors; full size detectors; radiation hardness; Czochralski silicon; material engineering

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Luukka, P. (2006). Characterization of Czochralski Silicon Detectors. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2006/isbn9521029560/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Luukka, Panja-Riina. “Characterization of Czochralski Silicon Detectors.” 2006. Thesis, Helsinki University of Technology. Accessed March 02, 2021. http://lib.tkk.fi/Diss/2006/isbn9521029560/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Luukka, Panja-Riina. “Characterization of Czochralski Silicon Detectors.” 2006. Web. 02 Mar 2021.

Vancouver:

Luukka P. Characterization of Czochralski Silicon Detectors. [Internet] [Thesis]. Helsinki University of Technology; 2006. [cited 2021 Mar 02]. Available from: http://lib.tkk.fi/Diss/2006/isbn9521029560/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Luukka P. Characterization of Czochralski Silicon Detectors. [Thesis]. Helsinki University of Technology; 2006. Available from: http://lib.tkk.fi/Diss/2006/isbn9521029560/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

12. Jiang, Tsung-Yueh. Research on the Crystal Growth and Laser Performances of Highly-doped Nd:Y3Al5O12 Single Crystal by Czochralski Technique.

Degree: Master, Materials and Optoelectronic Science, 2017, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701117-131636

► Nd:Y3Al5O12 (Nd:YAG) single crystal is the most commonly used laser crystal. In this thesis, highly-doped (Nd-doped concentrations = 1.5-4%) Nd:YAG crystals are grown by Czochralski… (more)

Subjects/Keywords: double end-pumped laser; side-pumped laser; Czochralski technique; laser crystal; Nd:YAG

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Jiang, T. (2017). Research on the Crystal Growth and Laser Performances of Highly-doped Nd:Y3Al5O12 Single Crystal by Czochralski Technique. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701117-131636

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Jiang, Tsung-Yueh. “Research on the Crystal Growth and Laser Performances of Highly-doped Nd:Y3Al5O12 Single Crystal by Czochralski Technique.” 2017. Thesis, NSYSU. Accessed March 02, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701117-131636.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Jiang, Tsung-Yueh. “Research on the Crystal Growth and Laser Performances of Highly-doped Nd:Y3Al5O12 Single Crystal by Czochralski Technique.” 2017. Web. 02 Mar 2021.

Vancouver:

Jiang T. Research on the Crystal Growth and Laser Performances of Highly-doped Nd:Y3Al5O12 Single Crystal by Czochralski Technique. [Internet] [Thesis]. NSYSU; 2017. [cited 2021 Mar 02]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701117-131636.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jiang T. Research on the Crystal Growth and Laser Performances of Highly-doped Nd:Y3Al5O12 Single Crystal by Czochralski Technique. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701117-131636

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

13. Sattayaporn, Suchinda. Etude d'oxydes monocristallins et de céramiques transparentes dopés Pr3+ ou Nd3+ pour la réalisation de lasers visibles : Study of Pr3+ or Nd3+ doped single crystals or transparent ceramics for visible laser emissions.

Degree: Docteur es, Chimie, 2018, Sorbonne université

URL: http://www.theses.fr/2018SORUS257

►

L’objectif de cette thèse est l’étude de matériaux oxydes pour le développement de lasers solides, émettant en particulier dans le domaine visible. Nous nous sommes… (more)

▼

L’objectif de cette thèse est l’étude de matériaux oxydes pour le développement de lasers solides, émettant en particulier dans le domaine visible. Nous nous sommes intéressés à des matériaux monocristallins et à des céramiques transparentes. Des ions Pr3+ ont été envisagés comme dopants en raison de leurs niveaux d’énergie adaptés pour des émissions directes (bleu, vert, orange, rouge et rouge foncé). En outre, des ions Nd3+ émettant dans le proche infrarouge, autour de 0.9 μm, ont été utilisés comme dopants afin de générer un laser bleu par un processus de conversion de fréquence. Nous avons ainsi préparé des matrices oxydes sous forme polycristalline pour des mesures de spectroscopie optique permettant de sélectionner les meilleurs matériaux. Des matrices d’oxyde à fusion congruente étudiées correspondent aux différentes familles comme suit : hexa-aluminate, mélilite, germanate, tungstate et sesquioxide. Les cristaux ont été élaborés par la méthode de Czochralski. En plus, certains matériaux cubiques a haut point de fusion comme Nd:Y2O3 et Nd:Y3Al5O12 ont été étudiés sous forme de céramiques transparentes de type classique ou composite. Nous avons ensuite caractérisé les propriétés physiques, optiques et spectroscopiques. Finalement, des émissions lasers dans le visible ont été démontrées en régime continu dans une cavité résonante de type plan-concave ou déplié (V). Pour les matériaux dopés Nd3+ et dopés Pr3+, nous avons obtenu l’effet lasers dans le visible avec les efficacités satisfaisantes. Les matériaux monocristallins: Pr:Sr1-xLaxAl12-xO19 et céramique composite Nd:Y3Al5O12 présentent un potentiel important pour le développement de lasers dans le domaine visible.

This thesis is aimed to find efficient oxide based solid-state materials for the development of lasers, particularly in visible spectral regions. We focused on Pr3+ and Nd3+ luminescent ions, doped in oxide-based hosts. Pr3+ ions are suitable for direct visible emissions in various regions, whereas the emission of Nd3+ ions in near infrared around 0.9 μm can be converted into blue laser by Second Harmonic Generation. A large-covered visible region could be expected in the range of 450 nm – 750 nm. First, we selected appropriate oxide hosts by using optical spectroscopy tools. All selected materials with congruent melting behavior were grown as single crystal. On the other hand, cubic materials with very high melting point, Nd:Y2O3 and Nd:Y3Al5O12, were prepared as standard and micro-core composite transparent ceramics, respectively. Next, all samples were thoroughly investigated in terms of physical, optical and spectroscopic properties. In the meantime, Judd-Ofelt analysis were computationally performed by using ground state absorption data to calculate radiative properties of studied solid-state materials, including radiative lifetime and branching ratio. Finally, laser operations were carried out within a plane-concave or V-type resonant cavity under blue and near infrared pumping for Pr3+ and Nd3+ solid-state materials, respectively. We…

Advisors/Committee Members: Aka, Gérard (thesis director).

Subjects/Keywords: Croissance cristalline; Praséodyme; Néodyme; Czochralski; Laser solide; Céramique transparente; Neodymium; Praseodymium; Solid-state laser; 546.413

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Sattayaporn, S. (2018). Etude d'oxydes monocristallins et de céramiques transparentes dopés Pr3+ ou Nd3+ pour la réalisation de lasers visibles : Study of Pr3+ or Nd3+ doped single crystals or transparent ceramics for visible laser emissions. (Doctoral Dissertation). Sorbonne université. Retrieved from http://www.theses.fr/2018SORUS257

Chicago Manual of Style (16^th Edition):

Sattayaporn, Suchinda. “Etude d'oxydes monocristallins et de céramiques transparentes dopés Pr3+ ou Nd3+ pour la réalisation de lasers visibles : Study of Pr3+ or Nd3+ doped single crystals or transparent ceramics for visible laser emissions.” 2018. Doctoral Dissertation, Sorbonne université. Accessed March 02, 2021. http://www.theses.fr/2018SORUS257.

MLA Handbook (7^th Edition):

Sattayaporn, Suchinda. “Etude d'oxydes monocristallins et de céramiques transparentes dopés Pr3+ ou Nd3+ pour la réalisation de lasers visibles : Study of Pr3+ or Nd3+ doped single crystals or transparent ceramics for visible laser emissions.” 2018. Web. 02 Mar 2021.

Vancouver:

Sattayaporn S. Etude d'oxydes monocristallins et de céramiques transparentes dopés Pr3+ ou Nd3+ pour la réalisation de lasers visibles : Study of Pr3+ or Nd3+ doped single crystals or transparent ceramics for visible laser emissions. [Internet] [Doctoral dissertation]. Sorbonne université; 2018. [cited 2021 Mar 02]. Available from: http://www.theses.fr/2018SORUS257.

Council of Science Editors:

Sattayaporn S. Etude d'oxydes monocristallins et de céramiques transparentes dopés Pr3+ ou Nd3+ pour la réalisation de lasers visibles : Study of Pr3+ or Nd3+ doped single crystals or transparent ceramics for visible laser emissions. [Doctoral Dissertation]. Sorbonne université; 2018. Available from: http://www.theses.fr/2018SORUS257

Loughborough University

14. Bargawi, Ahmad Yousef. A study of the martensitic phase transition in the shape memory alloy Ni₂MnGa.

Degree: PhD, 1998, Loughborough University

URL: http://hdl.handle.net/2134/32824

► A study of the martensitic phase transition in the shape memory alloy Ni2MnGa has been carried out. Ni2MnGa is one of the group of "shape… (more)

Subjects/Keywords: 530.41; Ferromagnetic; Czochralski growth; Heusler alloys

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Bargawi, A. Y. (1998). A study of the martensitic phase transition in the shape memory alloy Ni₂MnGa. (Doctoral Dissertation). Loughborough University. Retrieved from http://hdl.handle.net/2134/32824

Chicago Manual of Style (16^th Edition):

Bargawi, Ahmad Yousef. “A study of the martensitic phase transition in the shape memory alloy Ni₂MnGa.” 1998. Doctoral Dissertation, Loughborough University. Accessed March 02, 2021. http://hdl.handle.net/2134/32824.

MLA Handbook (7^th Edition):

Bargawi, Ahmad Yousef. “A study of the martensitic phase transition in the shape memory alloy Ni₂MnGa.” 1998. Web. 02 Mar 2021.

Vancouver:

Bargawi AY. A study of the martensitic phase transition in the shape memory alloy Ni₂MnGa. [Internet] [Doctoral dissertation]. Loughborough University; 1998. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/2134/32824.

Council of Science Editors:

Bargawi AY. A study of the martensitic phase transition in the shape memory alloy Ni₂MnGa. [Doctoral Dissertation]. Loughborough University; 1998. Available from: http://hdl.handle.net/2134/32824

NSYSU

15. Lee, Kai-Ping. Research of single crystal growth and scintillation performance of Ce:(Lu(1-X)YX)2SiO5(Ce:LYSO) scintillator.

Degree: Master, Materials and Optoelectronic Science, 2011, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804111-151732

► Single crystals of cerium doped lutetium yttrium orthosilicate scintillator (Ce:(Lu(1-X)YX)2SiO5; Ce:LYSO) were grown through Czochralski method to investigate the affection of different growth conditions on… (more)

Subjects/Keywords: scintillation performance research; Ce:(Lu(1-x)Yx)2SiO5; Single crystal growth; Czochralski method; scintillation crystal

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Lee, K. (2011). Research of single crystal growth and scintillation performance of Ce:(Lu(1-X)YX)2SiO5(Ce:LYSO) scintillator. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804111-151732

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Lee, Kai-Ping. “Research of single crystal growth and scintillation performance of Ce:(Lu(1-X)YX)2SiO5(Ce:LYSO) scintillator.” 2011. Thesis, NSYSU. Accessed March 02, 2021. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804111-151732.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Lee, Kai-Ping. “Research of single crystal growth and scintillation performance of Ce:(Lu(1-X)YX)2SiO5(Ce:LYSO) scintillator.” 2011. Web. 02 Mar 2021.

Vancouver:

Lee K. Research of single crystal growth and scintillation performance of Ce:(Lu(1-X)YX)2SiO5(Ce:LYSO) scintillator. [Internet] [Thesis]. NSYSU; 2011. [cited 2021 Mar 02]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804111-151732.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee K. Research of single crystal growth and scintillation performance of Ce:(Lu(1-X)YX)2SiO5(Ce:LYSO) scintillator. [Thesis]. NSYSU; 2011. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804111-151732

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Alberta

16. Ng, James C. Applications of nonautonomous infinite-dimensional systems control theory for parabolic PDEs.

Degree: PhD, Department of Chemical and Materials Engineering, 2013, University of Alberta

URL: https://era.library.ualberta.ca/files/6395w721q

► Parabolic partial differential equations (PDEs) are used as models of transport-reaction phenomena in a variety of different industrial chemical and materials engineering processes, and can… (more)

▼ Parabolic partial differential equations (PDEs) are used as models of transport-reaction phenomena in a variety of different industrial chemical and materials engineering processes, and can yield precise descriptions of process variables with complex temporal and spatially dependent system dynamics. In many cases, the process dynamics are also affected by time-dependent features of the system which arise from the underlying physical characteristics of the process or the methods utilized in the formation and treatment of materials which may result in phase transitions, deformations or a combination of these behaviours. The dynamical analysis of these processes provides a fundamental basis for development of model based control strategies through a number of approaches including from within the framework of infinite-dimensional systems control theory. However, each class of transport-reaction system presents its own unique challenges and requires the development of new strategies within the existing framework. The focus of this thesis is the systematic treatment and realization of the feedback control design for two general classes of problems. The first class deals with the optimal boundary control problem for unstable parabolic PDEs with nonautonomous and nonhomogeneous infinite-dimensional system representation, and is considered within the context of a lithium-ion battery thermal regulation problem. The key challenges addressed include the time-dependence of system parameters, system instability, the restriction of the input along a portion of the battery domain boundary, the observer based optimal boundary control design, and the realization of the outback feedback control problem based on state measurement and interpolation methods. The second class of problems is the optimal distributed and boundary control of parabolic PDEs on time-varying spatial domains with nonautonomous infinite-dimensional system representation. The key challenges addressed include the development of an appropriate function space setting to handle the time-dependence of the spatial domain, the formulation of the infinite-dimensional system representation of the PDE control problem within this function space setting, and the realization of the optimal distributed and boundary control problems within the context of the Czochralski crystal temperature stabilization problem.

Subjects/Keywords: Czochralski; lithium; infinite; dimensional; battery; regulation; diffusion; estimation; system; reaction; numerical; pde; convection; control; nonautonomous; optimal; state; parabolic; thermal; ion

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Ng, J. C. (2013). Applications of nonautonomous infinite-dimensional systems control theory for parabolic PDEs. (Doctoral Dissertation). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/6395w721q

Chicago Manual of Style (16^th Edition):

Ng, James C. “Applications of nonautonomous infinite-dimensional systems control theory for parabolic PDEs.” 2013. Doctoral Dissertation, University of Alberta. Accessed March 02, 2021. https://era.library.ualberta.ca/files/6395w721q.

MLA Handbook (7^th Edition):

Ng, James C. “Applications of nonautonomous infinite-dimensional systems control theory for parabolic PDEs.” 2013. Web. 02 Mar 2021.

Vancouver:

Ng JC. Applications of nonautonomous infinite-dimensional systems control theory for parabolic PDEs. [Internet] [Doctoral dissertation]. University of Alberta; 2013. [cited 2021 Mar 02]. Available from: https://era.library.ualberta.ca/files/6395w721q.

Council of Science Editors:

Ng JC. Applications of nonautonomous infinite-dimensional systems control theory for parabolic PDEs. [Doctoral Dissertation]. University of Alberta; 2013. Available from: https://era.library.ualberta.ca/files/6395w721q

McMaster University

17. Ahmed, Sheikh Jamil. STRUCTURE AND PHYSICAL PROPERTIES OF TRANSITION METAL BASED COMPOUNDS.

Degree: PhD, 2018, McMaster University

URL: http://hdl.handle.net/11375/23647

► Crystalline systems formed with transition metal elements tend to exhibit strong magneto-structural coupling that gives rise to unusual but exciting physical phenomena in these materials.… (more)

▼ Crystalline systems formed with transition metal elements tend to exhibit strong magneto-structural coupling that gives rise to unusual but exciting physical phenomena in these materials. In this dissertation, we present our findings from the studies of structural and physical properties of single phase compounds Co2MnSi, Ni16Mn6Si7 and Mn(Ni0.6Si0.4)2. In addition, the stability of a Ni2MnSi composition in a multiphase system is discussed by both theoretical and experimental approaches. All the works have been conducted with a focus on explaining the fundamental behaviors of these systems that have not been adequately addressed by other studies in the literature. We present an experimental and theoretical investigation of the half-metallic Heusler compound, Co2MnSi to address disorder occupancies and magnetic interactions in the material. Contrary to previous studies, our neutron diffraction refinement of the polycrystalline sample reveals almost identical amount of Mn and Co antisite disorders of ~6.5% and ~7.6%, respectively which is also supported explicitly by our first-principles calculations on the system with defects. A reduction of the net moment of Co2MnSi due to an antiferromagnetic interaction introduced by disordered Mn is observed by our theoretical study. The neutron refinements at 298 K, 100 K, and 4 K further supports such reduction of moments. The work also reports the growth of single crystal by the Czochralski method and determination of a Curie temperature of ~1014 K measured by both the electrical resistivity and dilatometry measurement. Studies of a Ni2MnSi Heusler system reveal two new systems i.e., the Ni16Mn6Si7 G-phase and the Mn(Ni0.6Si0.4)2 based Laves phase with complex crystal structures. These systems exhibit strong magneto-structural coupling that could lead to interesting physical behaviors. The lack of thorough understanding of the properties of these materials inspired us to undertake the present studies. We address the geometrically frustrated two-dimensional magnetic structure and spin canted weak ferromagnetic behavior of Ni16Mn6Si7. Our magnetization and specific heat measurements on a Czochralski grown single crystal sample depicts the paramagnetic to antiferromagnetic transition at 197 K, and a second phase change at 50 K. Furthermore, a gradual drop of zero field cooled magnetic susceptibility is observed below 6 K that is associated with the spin freezing effect. The neutron diffraction on the polycrystalline powder samples at the temperatures of interest reveals that the antiferromagnetism is governed by the magnetic ordering of the Mn ions in the octahedral network. Below the Néel temperature of 197 K, the 2/3 of Mn atom moments form a two-dimensional magnetic arrangement, while the 1/3 moments remain geometrically frustrated. The phase transition at 50 K is found to be associated with the reorientation of the 2D moments to a canted antiferromagnetic state and development of ordering of the frustrated paramagnetic ions. Magnetization measurements as a function… Advisors/Committee Members: Niewczas, Marek, Materials Science and Engineering.

Subjects/Keywords: Heusler compounds; G-Phase; Laves Phase; Neutron diffraction; Czochralski; Half-metallicity; Geometric frustration; Canted antiferromagnetism; Short range order.

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Ahmed, S. J. (2018). STRUCTURE AND PHYSICAL PROPERTIES OF TRANSITION METAL BASED COMPOUNDS. (Doctoral Dissertation). McMaster University. Retrieved from http://hdl.handle.net/11375/23647

Chicago Manual of Style (16^th Edition):

Ahmed, Sheikh Jamil. “STRUCTURE AND PHYSICAL PROPERTIES OF TRANSITION METAL BASED COMPOUNDS.” 2018. Doctoral Dissertation, McMaster University. Accessed March 02, 2021. http://hdl.handle.net/11375/23647.

MLA Handbook (7^th Edition):

Ahmed, Sheikh Jamil. “STRUCTURE AND PHYSICAL PROPERTIES OF TRANSITION METAL BASED COMPOUNDS.” 2018. Web. 02 Mar 2021.

Vancouver:

Ahmed SJ. STRUCTURE AND PHYSICAL PROPERTIES OF TRANSITION METAL BASED COMPOUNDS. [Internet] [Doctoral dissertation]. McMaster University; 2018. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/11375/23647.

Council of Science Editors:

Ahmed SJ. STRUCTURE AND PHYSICAL PROPERTIES OF TRANSITION METAL BASED COMPOUNDS. [Doctoral Dissertation]. McMaster University; 2018. Available from: http://hdl.handle.net/11375/23647

University of Oxford

18. Stowe, David John. An investigation of efficient room temperature luminescence from silicon which contains dislocations.

Degree: PhD, 2006, University of Oxford

URL: http://ora.ox.ac.uk/objects/uuid:9ee073b7-9e3c-4637-9ce1-62e9e4ade69d ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.442929

► This thesis presents an investigation of the phenomenon of efficient, room temperature luminescence from dislocation-engineered (DE) silicon. Previous work had demonstrated that the introduction of… (more)

▼ This thesis presents an investigation of the phenomenon of efficient, room temperature luminescence from dislocation-engineered (DE) silicon. Previous work had demonstrated that the introduction of near-surface dislocation loops to a silicon substrate by boron ion implantation and high temperature annealing produced efficient electroluminescence at room temperature. However, the mechanism by which high efficiency luminescence is produced was not understood. A wide matrix of specimens containing dislocations was fabricated by a variety of methods, including ion implantation, and their luminescence efficiencies were correlated to their physical properties. Transmission electron microscopy was used to characterise the defect structures created by ion implantation. In the majority of specimens a band of dislocation loops in close proximity to the surface was observed. The dislocation loops were shown to be consistent with a mixture of Frank and perfect dislocation loops, the relative proportions of which were dependent upon processing conditions. The thermal evolution of the dislocation loop size distribution was investigated. For the first time, a size distribution displaying a double peak was observed. The size distribution was shown to be consistent with the Gaussian distribution of two defect populations of different mean diameter. The thermal evolution of the size distribution was investigated in silicon implanted samples. A flux of self-interstitials from Frank dislocation loops to perfect dislocation loops was deduced. The evolution of the dislocation loop sizes was found to be consistent with Ostwald ripening. Cathodoluminescence (CL) was used to investigate the luminescent properties of silicon at room temperature for the first time. A new CL system was installed for this work, initially the CL system was characterised and a routine to ensure a high degree of reproducibility was formed. The luminescence mechanism of DE-silicon was shown to be the same as in unprocessed silicon wafers; TO phonon-assisted recombination. The mechanism of enhanced luminescence from DE-silicon was unambiguously shown to be due to the gettering of electrically active impurities from the specimen bulk. A reduction in the bulk transition metal impurity concentration of up to 35 times was inferred. In samples which were implanted with boron the degree of gettering was found to show a logarithmic dependence on the dislocation density. Using a crosssectional mapping technique, implanted samples were shown to contain a lower concentration of transition metal impurities throughout the entire wafer in comparison to as-received, unprocessed specimens. Furthermore, the impurity concentration was found to be lowest in close proximity to the band of dislocation loops. The dislocation loops were found to act as non-radiative recombination centres and their strength was strongly influenced by the local carrier concentration. The high doping levels of samples implanted with boron were found to minimise the non-radiative recombination action of the…

Subjects/Keywords: 621.381; Silicon; Silicon; Czochralski; luminescence; dislocations; cathodoluminescence; defects

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Stowe, D. J. (2006). An investigation of efficient room temperature luminescence from silicon which contains dislocations. (Doctoral Dissertation). University of Oxford. Retrieved from http://ora.ox.ac.uk/objects/uuid:9ee073b7-9e3c-4637-9ce1-62e9e4ade69d ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.442929

Chicago Manual of Style (16^th Edition):

Stowe, David John. “An investigation of efficient room temperature luminescence from silicon which contains dislocations.” 2006. Doctoral Dissertation, University of Oxford. Accessed March 02, 2021. http://ora.ox.ac.uk/objects/uuid:9ee073b7-9e3c-4637-9ce1-62e9e4ade69d ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.442929.

MLA Handbook (7^th Edition):

Stowe, David John. “An investigation of efficient room temperature luminescence from silicon which contains dislocations.” 2006. Web. 02 Mar 2021.

Vancouver:

Stowe DJ. An investigation of efficient room temperature luminescence from silicon which contains dislocations. [Internet] [Doctoral dissertation]. University of Oxford; 2006. [cited 2021 Mar 02]. Available from: http://ora.ox.ac.uk/objects/uuid:9ee073b7-9e3c-4637-9ce1-62e9e4ade69d ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.442929.

Council of Science Editors:

Stowe DJ. An investigation of efficient room temperature luminescence from silicon which contains dislocations. [Doctoral Dissertation]. University of Oxford; 2006. Available from: http://ora.ox.ac.uk/objects/uuid:9ee073b7-9e3c-4637-9ce1-62e9e4ade69d ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.442929

Delft University of Technology

19. Chim, W.M. (author). A flexible electronic paper with integrated display driver using single grain TFT technology.

Degree: Electrical Engineering, Mathematics, Computer Sci, Computer Engineering, 2009, Delft University of Technology

URL: http://resolver.tudelft.nl/uuid:187e5e62-db64-4f62-8b08-c5dddfc174a3

►

DIMES and the department Computer Engineering from the University of Technology Delft are developing an Electronic Paper Display. This display will have a paper-like appearance… (more)

Subjects/Keywords: single grain; czochralski; tft; e-paper; qr-lpd

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Chim, W. M. (. (2009). A flexible electronic paper with integrated display driver using single grain TFT technology. (Masters Thesis). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:187e5e62-db64-4f62-8b08-c5dddfc174a3

Chicago Manual of Style (16^th Edition):

Chim, W M (author). “A flexible electronic paper with integrated display driver using single grain TFT technology.” 2009. Masters Thesis, Delft University of Technology. Accessed March 02, 2021. http://resolver.tudelft.nl/uuid:187e5e62-db64-4f62-8b08-c5dddfc174a3.

MLA Handbook (7^th Edition):

Chim, W M (author). “A flexible electronic paper with integrated display driver using single grain TFT technology.” 2009. Web. 02 Mar 2021.

Vancouver:

Chim WM(. A flexible electronic paper with integrated display driver using single grain TFT technology. [Internet] [Masters thesis]. Delft University of Technology; 2009. [cited 2021 Mar 02]. Available from: http://resolver.tudelft.nl/uuid:187e5e62-db64-4f62-8b08-c5dddfc174a3.

Council of Science Editors:

Chim WM(. A flexible electronic paper with integrated display driver using single grain TFT technology. [Masters Thesis]. Delft University of Technology; 2009. Available from: http://resolver.tudelft.nl/uuid:187e5e62-db64-4f62-8b08-c5dddfc174a3

Georgia Tech

20. Damiani, Benjamin Mark. Investigation of Light Induced Degradation in Promising Photovoltaic Grade Si and Development of Porous Silicon Anti-Reflection Coatings for Silicon Solar Cells.

Degree: PhD, Electrical and Computer Engineering, 2004, Georgia Tech

URL: http://hdl.handle.net/1853/5203

► Cast multi-crystalline silicon substrates are used in more than 50% of the photovoltaic modules produced today. The random grain orientations of multi-crystalline silicon wafers inhibit… (more)

▼ Cast multi-crystalline silicon substrates are used in more than 50% of the photovoltaic modules produced today. The random grain orientations of multi-crystalline silicon wafers inhibit the formation of an effective surface texturing using conventional techniques. The other main substrate used is single crystalline Czochralski wafers (~30% of the market share). Czochralski silicon material is known to suffer from the formation of a metastable defect under carrier injection, sometimes referred to as light induced degradation (LID). Light induced degradation in low-cost photovoltaic grade silicon is studied. Trap formation is shown to occur at temperatures above 200 °C. Efficiency degradation reduced from 0.75% to 0.24% when the cell thickness was reduced from 378 to 157m. The presence of light induced degradation in ribbon silicon solar cells is documented for the first time in this thesis. Trap generation and annihilation are observed in high lifetime regions of multi-crystalline silicon samples. No degradation was observed over a 24-hour period at 25 °C in high efficiency ribbon solar cells (>16%), but at an elevated temperature of ~75 °C, appreciable efficiency degradation was observed. Czochralski silicon solar cells showed full degradation within 24 hours at 25o C. Part two of this thesis involves the development of a surface texturing suitable for all crystalline silicon. Only 6 to 10 seconds in a 200:1 HF to HNO3 solution at room temperature allows for the formation of an effective porous silicon anti-reflection coating. This resulted in a porous silicon anti-reflection coated solar cell efficiency of 15.3% on a float zone Si sample with an excellent fill factor (78.7%). The typical process used in the literature involves porous silicon etching as the final step in the solar cell fabrication sequence. The major problem associated with this process sequence is fill factor degradation. This problem was overcome in this research by porous silicon etching prior to cell processing. It is shown that incorporating an acid texture prior to porous silicon etching can improve the surface reflectance for cast multi-crystalline and Czochralski silicon samples. Solar cell efficiencies of 14.8% for Cz Si and 13.6% for cast mc-Si were achieved. Advisors/Committee Members: Ajeet Rohatgi (Committee Chair), James Gole (Committee Member), Miroslav Begovic (Committee Member), Thomas Gaylord (Committee Member), W. Russ Callen (Committee Member).

Subjects/Keywords: Texture; Porous; Degradation; Multi-crystalline; Czochralski; Screen-printed

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Damiani, B. M. (2004). Investigation of Light Induced Degradation in Promising Photovoltaic Grade Si and Development of Porous Silicon Anti-Reflection Coatings for Silicon Solar Cells. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/5203

Chicago Manual of Style (16^th Edition):

Damiani, Benjamin Mark. “Investigation of Light Induced Degradation in Promising Photovoltaic Grade Si and Development of Porous Silicon Anti-Reflection Coatings for Silicon Solar Cells.” 2004. Doctoral Dissertation, Georgia Tech. Accessed March 02, 2021. http://hdl.handle.net/1853/5203.

MLA Handbook (7^th Edition):

Damiani, Benjamin Mark. “Investigation of Light Induced Degradation in Promising Photovoltaic Grade Si and Development of Porous Silicon Anti-Reflection Coatings for Silicon Solar Cells.” 2004. Web. 02 Mar 2021.

Vancouver:

Damiani BM. Investigation of Light Induced Degradation in Promising Photovoltaic Grade Si and Development of Porous Silicon Anti-Reflection Coatings for Silicon Solar Cells. [Internet] [Doctoral dissertation]. Georgia Tech; 2004. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1853/5203.

Council of Science Editors:

Damiani BM. Investigation of Light Induced Degradation in Promising Photovoltaic Grade Si and Development of Porous Silicon Anti-Reflection Coatings for Silicon Solar Cells. [Doctoral Dissertation]. Georgia Tech; 2004. Available from: http://hdl.handle.net/1853/5203

21. Khaled, Federico Nabil. Cristaux optiques non linéaires dopés ytterbium : un challenge pour la miniaturisation ultime des lasers solides verts. : Nonlinear optical crystals doped with ytterbium ions : the challenge for the miniaturization of green solid state lasers.

Degree: Docteur es, Science des Matériaux, 2015, Université Pierre et Marie Curie – Paris VI

URL: http://www.theses.fr/2015PA066394

►

L’auto-doublage de fréquence dans des cristaux optiques non linéaires dopés avec des ions ytterbium est actuellement le meilleur moyen d’obtenir une émission efficace dans le… (more)

▼

L’auto-doublage de fréquence dans des cristaux optiques non linéaires dopés avec des ions ytterbium est actuellement le meilleur moyen d’obtenir une émission efficace dans le vert, tout en garantissant une bonne compacité, un faisceau faiblement divergent et une bonne monochromaticité. Deux nouvelles matrices ont été étudiées en ce sens : BaCaBO3F un oxyfluorure à fusion congruente, et LaxGd1-xSc3(BO3)4 un membre de la famille des huntites à fusion non congruente mais pouvant être obtenu par la méthode Czochralski. Après l’étude des conditions de synthèse et de croissance, les propriétés optiques de l’ion ytterbium dans ces matrices ont été caractérisées, et l’effet laser en régime continu autour de 1µm a été démontré pour la première fois. Pour améliorer les performances d’auto-doublage de fréquence dans des cristaux de YCa4O(BO3)3:Yb, deux pistes ont été envisagées : stabiliser l’émission laser infra-rouge en travaillant sur la cavité résonnante (traitement de surface des optiques), et améliorer le rendement de conversion de Génération de Seconde Harmonique de type I en effectuant le premier suivi expérimental de la courbe d’accord de phase hors des plans principaux à 1064nm.

Self-frequency-doubling in nonlinear optical crystals doped with ytterbium ions is actually the best way to combine both efficient emission in the green region, low divergent beams and good monochomaticity. Two new compounds have therefore been studied: BaCaBO3F a congruent melting oxyfluoride and LaxGd1-xSc3(BO3)3 a huntite-type crystal with incongruent melting that can however be obtained by the Czochralski method. We first studied the synthesis and growth conditions, and then the optical properties of the ytterbium doped crystals. Laser effect in continuous wave operation mode was demonstrated for the first time. In order to improve the self-frequency-doubling performances of the Yb:YCa4O(BO3)3 crystals, we focused on both stabilizing the 1µm laser emission (special anti-reflection coatings) and on maximizing the type I Second Harmonic Generation process at 1064nm (first direct measurements of both the conversion efficiency and the phase-matching directions out of the principal planes).

Advisors/Committee Members: Aka, Gérard (thesis director).

Subjects/Keywords: Croissance cristalline; Optique non linéaire; Ytterbium; Czochralski; Auto-Doublage de fréquence; Laser solide; Self-frequency-doubling; Ytterbium; Crystal growth; 530

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Khaled, F. N. (2015). Cristaux optiques non linéaires dopés ytterbium : un challenge pour la miniaturisation ultime des lasers solides verts. : Nonlinear optical crystals doped with ytterbium ions : the challenge for the miniaturization of green solid state lasers. (Doctoral Dissertation). Université Pierre et Marie Curie – Paris VI. Retrieved from http://www.theses.fr/2015PA066394

Chicago Manual of Style (16^th Edition):

Khaled, Federico Nabil. “Cristaux optiques non linéaires dopés ytterbium : un challenge pour la miniaturisation ultime des lasers solides verts. : Nonlinear optical crystals doped with ytterbium ions : the challenge for the miniaturization of green solid state lasers.” 2015. Doctoral Dissertation, Université Pierre et Marie Curie – Paris VI. Accessed March 02, 2021. http://www.theses.fr/2015PA066394.

MLA Handbook (7^th Edition):

Khaled, Federico Nabil. “Cristaux optiques non linéaires dopés ytterbium : un challenge pour la miniaturisation ultime des lasers solides verts. : Nonlinear optical crystals doped with ytterbium ions : the challenge for the miniaturization of green solid state lasers.” 2015. Web. 02 Mar 2021.

Vancouver:

Khaled FN. Cristaux optiques non linéaires dopés ytterbium : un challenge pour la miniaturisation ultime des lasers solides verts. : Nonlinear optical crystals doped with ytterbium ions : the challenge for the miniaturization of green solid state lasers. [Internet] [Doctoral dissertation]. Université Pierre et Marie Curie – Paris VI; 2015. [cited 2021 Mar 02]. Available from: http://www.theses.fr/2015PA066394.

Council of Science Editors:

Khaled FN. Cristaux optiques non linéaires dopés ytterbium : un challenge pour la miniaturisation ultime des lasers solides verts. : Nonlinear optical crystals doped with ytterbium ions : the challenge for the miniaturization of green solid state lasers. [Doctoral Dissertation]. Université Pierre et Marie Curie – Paris VI; 2015. Available from: http://www.theses.fr/2015PA066394

22. Scalvi, Luis Vicente de Andrade. Simulação numérica da fase líquida do crescimento de silício pelo método Czocharalski.

Degree: Mestrado, Física Aplicada, 1986, University of São Paulo

URL: http://www.teses.usp.br/teses/disponiveis/54/54132/tde-13102009-111526/ ;

►

Visando compreender os fluxos na fase líquida do crescimento de silício pelo método Czochralski, é feita a Simulação Numérica do silício fundido, resolvendo-se as equações… (more)

Subjects/Keywords: Czochralski; Czochralski; Elementos finitos; Fase líquida; Finite element; Liquid phase; Numerical simulation; Silício; Silicon; Simulação numérica

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Scalvi, L. V. d. A. (1986). Simulação numérica da fase líquida do crescimento de silício pelo método Czocharalski. (Masters Thesis). University of São Paulo. Retrieved from http://www.teses.usp.br/teses/disponiveis/54/54132/tde-13102009-111526/ ;

Chicago Manual of Style (16^th Edition):

Scalvi, Luis Vicente de Andrade. “Simulação numérica da fase líquida do crescimento de silício pelo método Czocharalski.” 1986. Masters Thesis, University of São Paulo. Accessed March 02, 2021. http://www.teses.usp.br/teses/disponiveis/54/54132/tde-13102009-111526/ ;.

MLA Handbook (7^th Edition):

Scalvi, Luis Vicente de Andrade. “Simulação numérica da fase líquida do crescimento de silício pelo método Czocharalski.” 1986. Web. 02 Mar 2021.

Vancouver:

Scalvi LVdA. Simulação numérica da fase líquida do crescimento de silício pelo método Czocharalski. [Internet] [Masters thesis]. University of São Paulo; 1986. [cited 2021 Mar 02]. Available from: http://www.teses.usp.br/teses/disponiveis/54/54132/tde-13102009-111526/ ;.

Council of Science Editors:

Scalvi LVdA. Simulação numérica da fase líquida do crescimento de silício pelo método Czocharalski. [Masters Thesis]. University of São Paulo; 1986. Available from: http://www.teses.usp.br/teses/disponiveis/54/54132/tde-13102009-111526/ ;

23. Allani, Maroua. Effets des propriétés physico-chimiques du cristal LGT (La3Ga5.5Ta0.5O14) sur les performances des résonateurs piézoélectriques. : Effects of the physiocochemical properties of langatate crystal La3Ga5.5Ta0.5O14 on the performances of piezoelectric resonators.

Degree: Docteur es, Sciences pour l'ingénieur, 2017, Bourgogne Franche-Comté; Université de Carthage (Tunisie)

URL: http://www.theses.fr/2017UBFCD041

►

Nous avons caractérisé différents cristaux piézoélectriques de Langatate La3Ga5.5Ta0.5O14 (LGT), de différentes couleurs afin d’évaluer l’influence des défauts sur la qualité de dispositifs du domaine… (more)

▼

Nous avons caractérisé différents cristaux piézoélectriques de Langatate La3Ga5.5Ta0.5O14 (LGT), de différentes couleurs afin d’évaluer l’influence des défauts sur la qualité de dispositifs du domaine Temps-Fréquence (résonateurs acoustiques).Nous avons étudié la composition de ces cristaux dont les variations autour de la composition stoechiométrique sont surtout dues à l’évaporation du Ga2O au cours de la croissance compensée par un excès de Ga2O3 dans le mélange initial. Pour déterminer cette composition, la technique ICP-AES, précédée par une mise en solution par fusion alcaline, est la plus fiable.La présence d’impuretés chimiques, telles que les éléments métalliques ou les terres rares, liée à la pureté des oxydes de base, au frittage de la charge dans un creuset alumine… est étudiée. Nous expliquons ainsi la nature des centres colorés qui évolue selon l’atmosphère de tirage ou lors d’un recuit particulier.C’est ainsi que nous avons déterminé certaines propriétés de LGT permettant l’obtention de dispositifs comme les résonateurs à ondes de volume dont le produit Q.f est supérieur à celui des résonateurs à quartz. Pour cela, nous montrons notamment qu’il est nécessaire que :- la composition du cristal soit la plus proche possible de la stoechiométrie,- la résistivité électrique soit la plus grande possible,- l’étude spectroscopique ne révèle aucune absorption dans le domaine du visible.Dans ces conditions, le facteur de qualité Q d’une résonance à 10 MHz peut être de 1.44 million au point d’inversion de la courbe fréquence-température (1.35 pour le quartz) mais qu’il diminue notablement pour atteindre 0.35 million si nous pratiquons un recuit sous air à 1000°C pendant 48 h.

We have characterized Langatate piezoelectric crystals La3Ga5.5Ta0.5O14 (LGT), differently colored in order to evaluate the defects influence on the quality of Bulk Acoustic Waves resonators for the Time and Frequency domain.We have analyzed the composition of crystals whose variations around stoichiometric composition are mainly due to the evaporation of the Ga2O during growth compensated by adding an excess of Ga2O3 in the initial mixture. Among different techniques, the ICP-AES spectrometry, preceded by a dissolution by alkaline fusion seems to be the most accurate technique to determine the composition.The inevitable presence of chemical impurities, such as metallic elements, rare earth… linked to the purities of the raw materials, to the sintering of the load in an alumina crucible… is also studied. We try to explain in particular the nature of the color centers that evolve according to the growth atmosphere or during a particular annealing.So, we conclude by a list of necessary properties to obtain BAW resonators exhibiting a Q.f product higher than quartz. For this, we establish that it is necessary that:- the crystal composition is as close as possible to the stoichiometric composition,- the electrical resistivity is the highest possible,- the spectroscopic study does not reveal any absorption band in the visible domain.In these…

Advisors/Committee Members: Boy, Jean-Jacques (thesis director), Batis, Narjes (thesis director).

Subjects/Keywords: Cristal piézoélectrique Langatate; Quartz; Resonnateur à ondes de volume; Produit QF; Tirage Czochralski; Composition cristalline; Spectométries IR e UV visible; ICP-AES; Piezoelectric crystal Langatate; Quartz crystal; BAW resonator; Q.f product; Czochralski pulling; Crystalline composition; IR and UV-Visible spectrometries; ICP-AES; 670

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Allani, M. (2017). Effets des propriétés physico-chimiques du cristal LGT (La3Ga5.5Ta0.5O14) sur les performances des résonateurs piézoélectriques. : Effects of the physiocochemical properties of langatate crystal La3Ga5.5Ta0.5O14 on the performances of piezoelectric resonators. (Doctoral Dissertation). Bourgogne Franche-Comté; Université de Carthage (Tunisie). Retrieved from http://www.theses.fr/2017UBFCD041

Chicago Manual of Style (16^th Edition):

Allani, Maroua. “Effets des propriétés physico-chimiques du cristal LGT (La3Ga5.5Ta0.5O14) sur les performances des résonateurs piézoélectriques. : Effects of the physiocochemical properties of langatate crystal La3Ga5.5Ta0.5O14 on the performances of piezoelectric resonators.” 2017. Doctoral Dissertation, Bourgogne Franche-Comté; Université de Carthage (Tunisie). Accessed March 02, 2021. http://www.theses.fr/2017UBFCD041.

MLA Handbook (7^th Edition):

Allani, Maroua. “Effets des propriétés physico-chimiques du cristal LGT (La3Ga5.5Ta0.5O14) sur les performances des résonateurs piézoélectriques. : Effects of the physiocochemical properties of langatate crystal La3Ga5.5Ta0.5O14 on the performances of piezoelectric resonators.” 2017. Web. 02 Mar 2021.

Vancouver:

Allani M. Effets des propriétés physico-chimiques du cristal LGT (La3Ga5.5Ta0.5O14) sur les performances des résonateurs piézoélectriques. : Effects of the physiocochemical properties of langatate crystal La3Ga5.5Ta0.5O14 on the performances of piezoelectric resonators. [Internet] [Doctoral dissertation]. Bourgogne Franche-Comté; Université de Carthage (Tunisie); 2017. [cited 2021 Mar 02]. Available from: http://www.theses.fr/2017UBFCD041.

Council of Science Editors:

Allani M. Effets des propriétés physico-chimiques du cristal LGT (La3Ga5.5Ta0.5O14) sur les performances des résonateurs piézoélectriques. : Effects of the physiocochemical properties of langatate crystal La3Ga5.5Ta0.5O14 on the performances of piezoelectric resonators. [Doctoral Dissertation]. Bourgogne Franche-Comté; Université de Carthage (Tunisie); 2017. Available from: http://www.theses.fr/2017UBFCD041

24. Letty, Elénore. Identification and neutralization of lifetime-limiting defects in Czochralski silicon for high efficiency photovoltaic applications : Identification et neutralisation des défauts limitant les propriétés électriques du silicium Czochralski pour applications photovoltaïques.

Degree: Docteur es, Electronique, micro et nanoélectronique, optique et laser, 2017, Lyon

URL: http://www.theses.fr/2017LYSEI094

►

Les cellules photovoltaïques à base de silicium cristallin représentent plus de 90% du marché photovoltaïque mondial. Des architectures de cellules à haut rendement de conversion… (more)

▼

Les cellules photovoltaïques à base de silicium cristallin représentent plus de 90% du marché photovoltaïque mondial. Des architectures de cellules à haut rendement de conversion sont actuellement développées. Pour atteindre leurs performances maximales, ces architectures nécessitent néanmoins une amélioration des propriétés électriques des substrats de silicium cristallin. Les objectifs de cette thèse sont d’identifier les défauts limitant les propriétés électriques de ces substrats, de comprendre les mécanismes menant à leur formation et de proposer des moyens permettant leur neutralisation. Les matériaux étudiés sont des plaquettes de silicium Czochralski de type n, généralement utilisé pour les applications à haut rendement. Le four de tirage Czochralski a d’abord été modélisé afin de comprendre comment le passé thermique subi par le lingot de silicium lors de la cristallisation affecte la génération des défauts. Ces travaux ont été confirmés via des confrontations avec des données expérimentales, en utilisant une méthode originale développée dans le cadre de ce travail. Nous avons ensuite étudié l’influence du budget thermique lié aux procédés de fabrication des cellules sur la population de défauts. Nous avons ainsi pu montrer que la nature des défauts limitant les propriétés électriques du silicium était grandement modifiée selon le procédé de fabrication de cellules utilisé. Nous avons en outre mis en évidence une dégradation inattendue des propriétés électriques du silicium Czochralski de type n sous illumination, liée à la formation d’un défaut volumique inconnu. Les conditions de formation et de suppression de ce défaut ont été étudiées en profondeur. Enfin, les principaux défauts limitant les propriétés électriques du silicium ayant été identifiés et les mécanismes menant à leur formation compris, nous proposons dans un dernier chapitre des nouvelles techniques de caractérisation permettant de détecter les plaquettes défectueuses en début de ligne de production de cellules photovoltaïques, et ce à une cadence industrielle.

Photovoltaic solar cells based on crystalline silicon represent more than 90% of the worldwide photovoltaic market. High efficiency solar cell architectures are currently being developed. In order to allow their maximal performances to be reached, the electronic properties of their crystalline silicon substrate must however be enhanced. The goals of the present work are to identify the defects limiting the electronic properties of the substrate, to understand the mechanisms leading to their formation and to propose routes for their neutralization. The studied materials are n-type Czochralski silicon wafers, usually used as substrates for high efficiency photovoltaic applications. The Czochralski puller was first modeled in order to understand how the thermal history experienced by the silicon ingot during crystallization affects the defects generation. This study were validated through the comparison with experimental data using an original method developed in the frame of this work.…

Advisors/Committee Members: Lemiti, Mustapha (thesis director).

Subjects/Keywords: Electrotechnique; Cellule photovoltaïque; Silicium cristallin; Plaquette de silicium Czochralski de type n; Génération des défauts; Haut rendement de conversion; Electrotechnics; Photovoltaic Cell; Crystalline Silicon; N-Type Czochralski silicon wafers; Defects generation; High conversion efficiency; Solar cells; 537.540 72

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Letty, E. (2017). Identification and neutralization of lifetime-limiting defects in Czochralski silicon for high efficiency photovoltaic applications : Identification et neutralisation des défauts limitant les propriétés électriques du silicium Czochralski pour applications photovoltaïques. (Doctoral Dissertation). Lyon. Retrieved from http://www.theses.fr/2017LYSEI094

Chicago Manual of Style (16^th Edition):

Letty, Elénore. “Identification and neutralization of lifetime-limiting defects in Czochralski silicon for high efficiency photovoltaic applications : Identification et neutralisation des défauts limitant les propriétés électriques du silicium Czochralski pour applications photovoltaïques.” 2017. Doctoral Dissertation, Lyon. Accessed March 02, 2021. http://www.theses.fr/2017LYSEI094.

MLA Handbook (7^th Edition):

Letty, Elénore. “Identification and neutralization of lifetime-limiting defects in Czochralski silicon for high efficiency photovoltaic applications : Identification et neutralisation des défauts limitant les propriétés électriques du silicium Czochralski pour applications photovoltaïques.” 2017. Web. 02 Mar 2021.

Vancouver:

Letty E. Identification and neutralization of lifetime-limiting defects in Czochralski silicon for high efficiency photovoltaic applications : Identification et neutralisation des défauts limitant les propriétés électriques du silicium Czochralski pour applications photovoltaïques. [Internet] [Doctoral dissertation]. Lyon; 2017. [cited 2021 Mar 02]. Available from: http://www.theses.fr/2017LYSEI094.

Council of Science Editors:

Letty E. Identification and neutralization of lifetime-limiting defects in Czochralski silicon for high efficiency photovoltaic applications : Identification et neutralisation des défauts limitant les propriétés électriques du silicium Czochralski pour applications photovoltaïques. [Doctoral Dissertation]. Lyon; 2017. Available from: http://www.theses.fr/2017LYSEI094

25. Lu, Dazhi. Propriétés optiques non linéaires quadratiques des cristaux La3Ga5.5Nb0.5O14 (LGN) et Rb : KTiOPO4 à domaines ferroélectriques alternés périodiquement (PPRKTP) : Quadratic nonlinear optical properties of La3Ga5.5Nb0.5O14 (LGN) and periodically-poled Rb : KTiOPO4 (PPRKTP) crystals.

Degree: Docteur es, Optique et radiofrequences, 2018, Université Grenoble Alpes (ComUE); Shandong University (Jinan, Chine)

URL: http://www.theses.fr/2018GREAT042

►

L’optique non linéaire qui convertit la gamme de fréquences des sources lasers vers l’ultraviolet, le visible, l’infrarouge ou le térahertz par exemple, joue un rôle… (more)

▼

L’optique non linéaire qui convertit la gamme de fréquences des sources lasers vers l’ultraviolet, le visible, l’infrarouge ou le térahertz par exemple, joue un rôle crucial pour la médicine, l’industrie, les applications militaires, la recherche etc. L’accord de phase par biréfringence (BPM) ou le quasi-accord de phase (QPM) à partir de processus non linéaires quadratiques, peuvent être utilisés pour la conversion de fréquence dans le domaine de transparence de cristaux non linéaires. Dans ce travail de thèse, un cristal uniaxe de La3Ga5.5Nb0.5O14 (LGN) a été élaboré en utilisant une méthode de Czochralski, puis il a été étudié pour le BPM. Nous avons aussi validé la théorie du QPM angulaire (AQPM), qui correspond à la généralisation du QPM à n’importe quel angle par rapport au vecteur du réseau. Pour cela, nous avons étudié un cristal biaxe de Rb: KTiOPO4 à domaines ferroélectriques alternés périodiquement (PPRKTP) usiné en forme de sphère. Tous ces résultats constituent une base fiable for les études avenir consacrées à la conception de dispositifs pour la conversion de fréquence.

Nonlinear optics converting the frequency range of laser sources to ultraviolet, visible, infrared or terahertz ranges for example, plays a crucial role in medicine, industry, military applications, research and so on. Birefringence phase-matching (BPM) or quasi-phase-matching (QPM) from quadratic nonlinear processes, can be used for frequency conversion in the transparency range of nonlinear crystals. In this PhD work, a La3Ga5.5Nb0.5O14 (LGN) uniaxial crystal was grown using a Czochralski method and then studied for BPM. We also validated the theory of angular-QPM (AQPM), corresponding to a generalization of QPM achieved at any angle with respect to the grating vector. For that purpose, we studied a periodically-poled large-aperture Rb:KTiOPO4 (PPRKTP) biaxial crystal cut a sphere. All the results provide a reliable basis for further studies devoted to the design of frequency conversion devices.

Advisors/Committee Members: Boulanger, Benoît (thesis director), Segonds, Patricia (thesis director), Zhang, Huaijin (thesis director), Yu, Haohai (thesis director).

Subjects/Keywords: Optique non linéaire; Conversion de fréquences; Croissance de cristaux par Czochralski; Accord de phase par birefringence; Quasi-Accord de phase angulaire; Nonlinear optics; Frequency conversion; Czochralski crystal growth; Birefringence phase-Matching; Angular quasi-Phase-Matching; 530

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Lu, D. (2018). Propriétés optiques non linéaires quadratiques des cristaux La3Ga5.5Nb0.5O14 (LGN) et Rb : KTiOPO4 à domaines ferroélectriques alternés périodiquement (PPRKTP) : Quadratic nonlinear optical properties of La3Ga5.5Nb0.5O14 (LGN) and periodically-poled Rb : KTiOPO4 (PPRKTP) crystals. (Doctoral Dissertation). Université Grenoble Alpes (ComUE); Shandong University (Jinan, Chine). Retrieved from http://www.theses.fr/2018GREAT042

Chicago Manual of Style (16^th Edition):

Lu, Dazhi. “Propriétés optiques non linéaires quadratiques des cristaux La3Ga5.5Nb0.5O14 (LGN) et Rb : KTiOPO4 à domaines ferroélectriques alternés périodiquement (PPRKTP) : Quadratic nonlinear optical properties of La3Ga5.5Nb0.5O14 (LGN) and periodically-poled Rb : KTiOPO4 (PPRKTP) crystals.” 2018. Doctoral Dissertation, Université Grenoble Alpes (ComUE); Shandong University (Jinan, Chine). Accessed March 02, 2021. http://www.theses.fr/2018GREAT042.

MLA Handbook (7^th Edition):

Lu, Dazhi. “Propriétés optiques non linéaires quadratiques des cristaux La3Ga5.5Nb0.5O14 (LGN) et Rb : KTiOPO4 à domaines ferroélectriques alternés périodiquement (PPRKTP) : Quadratic nonlinear optical properties of La3Ga5.5Nb0.5O14 (LGN) and periodically-poled Rb : KTiOPO4 (PPRKTP) crystals.” 2018. Web. 02 Mar 2021.

Vancouver:

Lu D. Propriétés optiques non linéaires quadratiques des cristaux La3Ga5.5Nb0.5O14 (LGN) et Rb : KTiOPO4 à domaines ferroélectriques alternés périodiquement (PPRKTP) : Quadratic nonlinear optical properties of La3Ga5.5Nb0.5O14 (LGN) and periodically-poled Rb : KTiOPO4 (PPRKTP) crystals. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); Shandong University (Jinan, Chine); 2018. [cited 2021 Mar 02]. Available from: http://www.theses.fr/2018GREAT042.

Council of Science Editors:

Lu D. Propriétés optiques non linéaires quadratiques des cristaux La3Ga5.5Nb0.5O14 (LGN) et Rb : KTiOPO4 à domaines ferroélectriques alternés périodiquement (PPRKTP) : Quadratic nonlinear optical properties of La3Ga5.5Nb0.5O14 (LGN) and periodically-poled Rb : KTiOPO4 (PPRKTP) crystals. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); Shandong University (Jinan, Chine); 2018. Available from: http://www.theses.fr/2018GREAT042

University of Manchester

26. Vaqueiro Contreras, Michelle. Bulk Lifetime Limiting Defects in Czochralski Silicon and Graphene Oxide as a Surface Passivation Material.

Degree: 2018, University of Manchester

URL: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317269

► Crystalline silicon continues to be the backbone of solar cell technologies. Enor- mous efforts towards process optimisation, cell architecture and defect identification, amongst others, thus… (more)

▼ Crystalline silicon continues to be the backbone of solar cell technologies. Enor- mous efforts towards process optimisation, cell architecture and defect identification, amongst others, thus continue to be made in order to push the limits of achievable ef- ficiencies. Consequently, this thesis aims to provide an improved understanding of a variety of defects related to light element impurities commonly found in silicon mate- rials used for cell fabrication, and their effect on the minority carrier lifetime. This thesis begins with a chapter which includes the motivation and outline of the present document. There, a summary of the most important aspects of the presented investigations and the relevance of the carried out work is described. In the subse- quent chapter, a review on diverse silicon materials used for solar cell fabrication and the characterization techniques applied by the author for the shown studies is con- ferred. The most important chapters then are those which follow Chapter 2, where all the contributions from this thesis are presented in the form of published, submit- ted or submission-pending papers. Lastly, a concluding chapter is presented with final remarks from the contributions from the thesis and further work. Amongst the most important contributions from this work stand out the following: 1. The identification of a lifetime-limiting complex which includes atomic H on its composition in phosphorous-doped Cz-Si crystals containing high levels of O and C. These findings thus include the rather controversial remark of having the ubiquitous H as a detrimental impurity for solar cell fabrication. 2. The identification of two previously unreported spectroscopic signals related to two thermal-donor species present in P-doped Cz-Si which have recently been suggested to limit the minority carrier of the material in literature. By means of various junction capacitance techniques evidence disproving the validity of such suggestion is provided. 3. The demonstration of a previously undetected spectroscopic signal attributed to a BO-complex in B-doped Cz-Si. Complex that appears to be related to the responsible defect of the decades-long problem of light-induced degradation oc- curring in solar cells made from this type of materials during the first few days of their operation. 4. The demonstration of graphene oxide as a potential cheap alternative for silicon surface passivation, and the identification of its primary passivation mechanism as a field-effect coming from the GOâ€™s negative surface charge. Advisors/Committee Members: VIJAYARAGHAVAN, ARAVIND A, Halsall, Matthew, Vijayaraghavan, Aravind.

Subjects/Keywords: Silicon defects; Czochralski silicon; solar cells; carbon defects; hydrogen defects; oxygen defects; graphene oxide passivation; deep level transient spectroscopy; recombination; minority carrier lifetime; Minority carrier transient spectroscopy; light induced degradation

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Vaqueiro Contreras, M. (2018). Bulk Lifetime Limiting Defects in Czochralski Silicon and Graphene Oxide as a Surface Passivation Material. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317269

Chicago Manual of Style (16^th Edition):

Vaqueiro Contreras, Michelle. “Bulk Lifetime Limiting Defects in Czochralski Silicon and Graphene Oxide as a Surface Passivation Material.” 2018. Doctoral Dissertation, University of Manchester. Accessed March 02, 2021. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317269.

MLA Handbook (7^th Edition):

Vaqueiro Contreras, Michelle. “Bulk Lifetime Limiting Defects in Czochralski Silicon and Graphene Oxide as a Surface Passivation Material.” 2018. Web. 02 Mar 2021.

Vancouver:

Vaqueiro Contreras M. Bulk Lifetime Limiting Defects in Czochralski Silicon and Graphene Oxide as a Surface Passivation Material. [Internet] [Doctoral dissertation]. University of Manchester; 2018. [cited 2021 Mar 02]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317269.

Council of Science Editors:

Vaqueiro Contreras M. Bulk Lifetime Limiting Defects in Czochralski Silicon and Graphene Oxide as a Surface Passivation Material. [Doctoral Dissertation]. University of Manchester; 2018. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317269

Delft University of Technology

27. Rana, V. Single grain Si TFT's and circuits based on the µ-Czochralski process.

Degree: 2006, Delft University of Technology

URL: http://resolver.tudelft.nl/uuid:464eb73e-e250-4174-b792-36cc1ec15331 ; urn:NBN:nl:ui:24-uuid:464eb73e-e250-4174-b792-36cc1ec15331 ; urn:NBN:nl:ui:24-uuid:464eb73e-e250-4174-b792-36cc1ec15331 ; http://resolver.tudelft.nl/uuid:464eb73e-e250-4174-b792-36cc1ec15331

Abstract not available Advisors/Committee Members: Beenakker, C.I.M..

Subjects/Keywords: excimer-laser crystallization; µ-Czochralski; grain filter; thin-film transistors; integrated circuits

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Rana, V. (2006). Single grain Si TFT's and circuits based on the µ-Czochralski process. (Doctoral Dissertation). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:464eb73e-e250-4174-b792-36cc1ec15331 ; urn:NBN:nl:ui:24-uuid:464eb73e-e250-4174-b792-36cc1ec15331 ; urn:NBN:nl:ui:24-uuid:464eb73e-e250-4174-b792-36cc1ec15331 ; http://resolver.tudelft.nl/uuid:464eb73e-e250-4174-b792-36cc1ec15331

Chicago Manual of Style (16^th Edition):

Rana, V. “Single grain Si TFT's and circuits based on the µ-Czochralski process.” 2006. Doctoral Dissertation, Delft University of Technology. Accessed March 02, 2021. http://resolver.tudelft.nl/uuid:464eb73e-e250-4174-b792-36cc1ec15331 ; urn:NBN:nl:ui:24-uuid:464eb73e-e250-4174-b792-36cc1ec15331 ; urn:NBN:nl:ui:24-uuid:464eb73e-e250-4174-b792-36cc1ec15331 ; http://resolver.tudelft.nl/uuid:464eb73e-e250-4174-b792-36cc1ec15331.

MLA Handbook (7^th Edition):

Rana, V. “Single grain Si TFT's and circuits based on the µ-Czochralski process.” 2006. Web. 02 Mar 2021.

Vancouver:

Rana V. Single grain Si TFT's and circuits based on the µ-Czochralski process. [Internet] [Doctoral dissertation]. Delft University of Technology; 2006. [cited 2021 Mar 02]. Available from: http://resolver.tudelft.nl/uuid:464eb73e-e250-4174-b792-36cc1ec15331 ; urn:NBN:nl:ui:24-uuid:464eb73e-e250-4174-b792-36cc1ec15331 ; urn:NBN:nl:ui:24-uuid:464eb73e-e250-4174-b792-36cc1ec15331 ; http://resolver.tudelft.nl/uuid:464eb73e-e250-4174-b792-36cc1ec15331.

Council of Science Editors:

Rana V. Single grain Si TFT's and circuits based on the µ-Czochralski process. [Doctoral Dissertation]. Delft University of Technology; 2006. Available from: http://resolver.tudelft.nl/uuid:464eb73e-e250-4174-b792-36cc1ec15331 ; urn:NBN:nl:ui:24-uuid:464eb73e-e250-4174-b792-36cc1ec15331 ; urn:NBN:nl:ui:24-uuid:464eb73e-e250-4174-b792-36cc1ec15331 ; http://resolver.tudelft.nl/uuid:464eb73e-e250-4174-b792-36cc1ec15331

Univerzitet u Beogradu

28. Požega, Emina, 1973-, 35370599. Sinteza i karakterizacija monokristala bizmuta i telura dopiranih selenom, cirkonijumom i arsenom.

Degree: Tehnički fakultet u Boru, 2020, Univerzitet u Beogradu

URL: https://fedorabg.bg.ac.rs/fedora/get/o:21033/bdef:Content/get

►

Metalurgija - Prerađivačka metalurgija / Metallurgy - Processing metallurgy

Istraživanja u okviru ove doktorske disertacije obuhvatila su sintezu i karakterizaciju monokrista bizmuta i telura dopiranih… (more)

▼

Metalurgija - Prerađivačka metalurgija / Metallurgy - Processing metallurgy

Istraživanja u okviru ove doktorske disertacije obuhvatila su sintezu i karakterizaciju monokrista bizmuta i telura dopiranih selenom, cirkonijumom i arsenom dobijenih Čohralski i Bridžman postupkom. Jedinjenja na bazi bizmut telurida predstavljaju vrlo važne materijale za proizvodnju termoelektričnih hladnjaka i uređaja za proizvodnju električne energije. Za karakterizaciju monokristala korišćeno je više savremenih, standardizovanih, visoko rezolutivnih metoda i analitičkih tehnika. Rezultati prve serije eksperimenata pokazuju sintezu i eksperimentalna ispitivanja poluprovodnika n tipa Bi2Te2.88Se0.12 dobijenog metodom Čohralskog. Praćenje strukturnih promena uzoraka vršeno je elektronskim mikroskopom. Elementarni sastav i empirijska formula jedinjenja određeni su pomoću energetsko disperzivne spektrometrije (EDS). Ponašanje uzorka prilikom zagrevanja ispitano je korišćenjem diferencijalne termijske analize (DTA). Fizičke i hemijske osobine materijala su praćene u funkciji povećanja temperature termogravimetrijskom analizom (TGA). Rendgenskom difrakcijom (XRD) dobijeni su podaci položaja difrakcionih maksimuma 2θ (º), vrednosti međupljosnih rastojanja dhkl (Å) za sve refleksije, kao i odgovarajući relativni intenziteti I/Imax koji su dati grafički i tabelarno. Na osnovu dobijenih vrednosti I/Imax i dhkl i upoređivanjem sa literaturnim podacima i JCPDS i ICSD standardima, identifikovano je da je dobijen monokristal i proračunati su parametri jediničnih ćelija poluprovodnika. Vrednosti parametara rešetke dobijene difrakcionom analizom praha Bi2Te2.88Se0.12 veoma su slične konstatama rešetke Bi2Te3, što ukazuje na to da je mali deo telura zamenjen selenom. Vrednosti Vikersove mikrotvrdoće su u opsegu između HV 187 i HV 39.02 i smanjuju se sa povećanjem opterećenja. Pokazalo se da vrlo složen proces infracrvene termografije može biti primenjen za karakterizaciju termoelektričnih elemenata i modula. Rezultati završne serije eksperimenata pokazuju sintezu monokristalnih ingota, BiSbTeSe dopiranog cirkonijumom i BiTeSe dopiranog arsenom, sintetisanih Bridžman metodom. Za utvrđivanje hemijskog sastava proučavanih uzoraka, kao i provere i potvrđivanje homogenosti uzoraka korišćena je analiza energetsko disperzivne spektrometrije (EDS). Merenja rentgenske difrakcije (XRD) pokazala su da dobijeni kristalni ingoti predstavljaju monokristal i potvrđuju jedinjenje Bi2Te3 tipa. Određena je orjentacija (00l) monokristala dopiranog cirkonijumom. Tačka topljenja monokristala dopiranog cirkonijumom određena je dilatometrijskom analizom...

Advisors/Committee Members: Marjanović, Saša, 1971-, 35374439.

Subjects/Keywords: bismuth and tellurium single crystals; semiconductors; Bridgemann method; Czochralski method; doping; LOM; SEM - EDS; DTA; TGA; XRD; thermovision; Hall and Van der Pauw method; dilatometric analysis; microhardness; thermoelectric analysis

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Požega, Emina, 1973-, 3. (2020). Sinteza i karakterizacija monokristala bizmuta i telura dopiranih selenom, cirkonijumom i arsenom. (Thesis). Univerzitet u Beogradu. Retrieved from https://fedorabg.bg.ac.rs/fedora/get/o:21033/bdef:Content/get

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Požega, Emina, 1973-, 35370599. “Sinteza i karakterizacija monokristala bizmuta i telura dopiranih selenom, cirkonijumom i arsenom.” 2020. Thesis, Univerzitet u Beogradu. Accessed March 02, 2021. https://fedorabg.bg.ac.rs/fedora/get/o:21033/bdef:Content/get.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Požega, Emina, 1973-, 35370599. “Sinteza i karakterizacija monokristala bizmuta i telura dopiranih selenom, cirkonijumom i arsenom.” 2020. Web. 02 Mar 2021.

Vancouver:

Požega, Emina, 1973- 3. Sinteza i karakterizacija monokristala bizmuta i telura dopiranih selenom, cirkonijumom i arsenom. [Internet] [Thesis]. Univerzitet u Beogradu; 2020. [cited 2021 Mar 02]. Available from: https://fedorabg.bg.ac.rs/fedora/get/o:21033/bdef:Content/get.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Požega, Emina, 1973- 3. Sinteza i karakterizacija monokristala bizmuta i telura dopiranih selenom, cirkonijumom i arsenom. [Thesis]. Univerzitet u Beogradu; 2020. Available from: https://fedorabg.bg.ac.rs/fedora/get/o:21033/bdef:Content/get

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Manchester

29. Vaqueiro Contreras, Michelle. Bulk lifetime limiting defects in Czochralski silicon and graphene oxide as a surface passivation material.

Degree: PhD, 2019, University of Manchester

URL: https://www.research.manchester.ac.uk/portal/en/theses/bulk-lifetime-limiting-defects-in-czochralski-silicon-and-graphene-oxide-as-a-surface-passivation-material(4ad3e1a1-51f8-478b-b3ba-c43b5da7b97e).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.799308

► Crystalline silicon continues to be the backbone of solar cell technologies. Enormous efforts towards process optimisation, cell architecture and defect identification, amongst others, thus continue… (more)

▼ Crystalline silicon continues to be the backbone of solar cell technologies. Enormous efforts towards process optimisation, cell architecture and defect identification, amongst others, thus continue to be made in order to push the limits of achievable efficiencies. Consequently, this thesis aims to provide an improved understanding of a variety of defects related to light element impurities commonly found in silicon materials used for cell fabrication, and their effect on the minority carrier lifetime. This thesis begins with a chapter which includes the motivation and outline of the present document. There, a summary of the most important aspects of the presented investigations and the relevance of the carried out work is described. In the subsequent chapter, a review on diverse silicon materials used for solar cell fabrication and the characterization techniques applied by the author for the shown studies is conferred. The most important chapters then are those which follow Chapter 2, where all the contributions from this thesis are presented in the form of published, submitted or submission-pending papers. Lastly, a concluding chapter is presented with final remarks from the contributions from the thesis and further work. Amongst the most important contributions from this work stand out the following: 1. The identification of a lifetime-limiting complex which includes atomic H on its composition in phosphorous-doped Cz-Si crystals containing high levels of O and C. These findings thus include the rather controversial remark of having the ubiquitous H as a detrimental impurity for solar cell fabrication. 2. The identification of two previously unreported spectroscopic signals related to two thermal-donor species present in P-doped Cz-Si which have recently been suggested to limit the minority carrier of the material in literature. By means of various junction capacitance techniques evidence disproving the validity of such suggestion is provided. 3. The demonstration of a previously undetected spectroscopic signal attributed to a BO-complex in B-doped Cz-Si. Complex that appears to be related to the responsible defect of the decades-long problem of light-induced degradation occurring in solar cells made from this type of materials during the first few days of their operation. 4. The demonstration of graphene oxide as a potential cheap alternative for silicon surface passivation, and the identification of its primary passivation mechanism as a field-effect coming from the GO's negative surface charge.

Subjects/Keywords: deep level transient spectroscopy; Minority carrier transient spectroscopy; minority carrier lifetime; recombination; graphene oxide passivation; light induced degradation; hydrogen defects; Silicon defects; Czochralski silicon; oxygen defects; carbon defects; solar cells

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Vaqueiro Contreras, M. (2019). Bulk lifetime limiting defects in Czochralski silicon and graphene oxide as a surface passivation material. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/bulk-lifetime-limiting-defects-in-czochralski-silicon-and-graphene-oxide-as-a-surface-passivation-material(4ad3e1a1-51f8-478b-b3ba-c43b5da7b97e).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.799308

Chicago Manual of Style (16^th Edition):

Vaqueiro Contreras, Michelle. “Bulk lifetime limiting defects in Czochralski silicon and graphene oxide as a surface passivation material.” 2019. Doctoral Dissertation, University of Manchester. Accessed March 02, 2021. https://www.research.manchester.ac.uk/portal/en/theses/bulk-lifetime-limiting-defects-in-czochralski-silicon-and-graphene-oxide-as-a-surface-passivation-material(4ad3e1a1-51f8-478b-b3ba-c43b5da7b97e).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.799308.

MLA Handbook (7^th Edition):

Vaqueiro Contreras, Michelle. “Bulk lifetime limiting defects in Czochralski silicon and graphene oxide as a surface passivation material.” 2019. Web. 02 Mar 2021.

Vancouver:

Vaqueiro Contreras M. Bulk lifetime limiting defects in Czochralski silicon and graphene oxide as a surface passivation material. [Internet] [Doctoral dissertation]. University of Manchester; 2019. [cited 2021 Mar 02]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/bulk-lifetime-limiting-defects-in-czochralski-silicon-and-graphene-oxide-as-a-surface-passivation-material(4ad3e1a1-51f8-478b-b3ba-c43b5da7b97e).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.799308.

Council of Science Editors:

Vaqueiro Contreras M. Bulk lifetime limiting defects in Czochralski silicon and graphene oxide as a surface passivation material. [Doctoral Dissertation]. University of Manchester; 2019. Available from: https://www.research.manchester.ac.uk/portal/en/theses/bulk-lifetime-limiting-defects-in-czochralski-silicon-and-graphene-oxide-as-a-surface-passivation-material(4ad3e1a1-51f8-478b-b3ba-c43b5da7b97e).html ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.799308

30. LIU YONG. NUMERICAL SIMULATION OF FLOWS IN CZOCHRALSKI CRYSTAL GROWTH AND TAYLOR VORTICES.

Degree: 1999, National University of Singapore

URL: https://scholarbank.nus.edu.sg/handle/10635/175666

Subjects/Keywords: Generalized Differential Quadrature (GDQ); Czochralski Crystal Growth; Taylor Vortex Flow; Numerical Simulation

Record Details Similar Records Cite « Share

❌

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

YONG, L. (1999). NUMERICAL SIMULATION OF FLOWS IN CZOCHRALSKI CRYSTAL GROWTH AND TAYLOR VORTICES. (Thesis). National University of Singapore. Retrieved from https://scholarbank.nus.edu.sg/handle/10635/175666

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

YONG, LIU. “NUMERICAL SIMULATION OF FLOWS IN CZOCHRALSKI CRYSTAL GROWTH AND TAYLOR VORTICES.” 1999. Thesis, National University of Singapore. Accessed March 02, 2021. https://scholarbank.nus.edu.sg/handle/10635/175666.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

YONG, LIU. “NUMERICAL SIMULATION OF FLOWS IN CZOCHRALSKI CRYSTAL GROWTH AND TAYLOR VORTICES.” 1999. Web. 02 Mar 2021.

Vancouver:

YONG L. NUMERICAL SIMULATION OF FLOWS IN CZOCHRALSKI CRYSTAL GROWTH AND TAYLOR VORTICES. [Internet] [Thesis]. National University of Singapore; 1999. [cited 2021 Mar 02]. Available from: https://scholarbank.nus.edu.sg/handle/10635/175666.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

YONG L. NUMERICAL SIMULATION OF FLOWS IN CZOCHRALSKI CRYSTAL GROWTH AND TAYLOR VORTICES. [Thesis]. National University of Singapore; 1999. Available from: https://scholarbank.nus.edu.sg/handle/10635/175666

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

		in
And / Or
		in
And / Or
		in
And / Or
		in

Open Access Theses and Dissertations