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You searched for subject:(Current stress). Showing records 1 – 30 of 64 total matches.

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NSYSU

1. Chen, Wei-Chung. Wave-Current Interaction in Viscous-incompressible Fluid.

Degree: Master, Marine Environment and Engineering, 2015, NSYSU

 In this paper, the flow field of interaction between wave and current in viscous-incompressible fluid was analyzed in a static and stable atmosphere with homogeneous… (more)

Subjects/Keywords: viscous-incompressible; bed shear stress; boundary layer; shear current; wave-current interaction

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APA (6th Edition):

Chen, W. (2015). Wave-Current Interaction in Viscous-incompressible Fluid. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0026115-122359

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Wei-Chung. “Wave-Current Interaction in Viscous-incompressible Fluid.” 2015. Thesis, NSYSU. Accessed October 29, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0026115-122359.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Wei-Chung. “Wave-Current Interaction in Viscous-incompressible Fluid.” 2015. Web. 29 Oct 2020.

Vancouver:

Chen W. Wave-Current Interaction in Viscous-incompressible Fluid. [Internet] [Thesis]. NSYSU; 2015. [cited 2020 Oct 29]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0026115-122359.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen W. Wave-Current Interaction in Viscous-incompressible Fluid. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0026115-122359

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Cincinnati

2. Bodine, Nathanael M. Hall Impedance and Eddy Current Spectroscopy for NondestructiveEvaluation of Shot-Peened Ti-6Al-4V.

Degree: MS, Engineering and Applied Science: Aerospace Engineering, 2019, University of Cincinnati

 There is a growing need to determine the residual stress profiles in surface-treated components to accurately and reliably determine the remaining service life of the… (more)

Subjects/Keywords: Aerospace Materials; residual stress assessment; Hall coefficient; eddy current; nondestructive evaluation

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APA (6th Edition):

Bodine, N. M. (2019). Hall Impedance and Eddy Current Spectroscopy for NondestructiveEvaluation of Shot-Peened Ti-6Al-4V. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1573572135697661

Chicago Manual of Style (16th Edition):

Bodine, Nathanael M. “Hall Impedance and Eddy Current Spectroscopy for NondestructiveEvaluation of Shot-Peened Ti-6Al-4V.” 2019. Masters Thesis, University of Cincinnati. Accessed October 29, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1573572135697661.

MLA Handbook (7th Edition):

Bodine, Nathanael M. “Hall Impedance and Eddy Current Spectroscopy for NondestructiveEvaluation of Shot-Peened Ti-6Al-4V.” 2019. Web. 29 Oct 2020.

Vancouver:

Bodine NM. Hall Impedance and Eddy Current Spectroscopy for NondestructiveEvaluation of Shot-Peened Ti-6Al-4V. [Internet] [Masters thesis]. University of Cincinnati; 2019. [cited 2020 Oct 29]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1573572135697661.

Council of Science Editors:

Bodine NM. Hall Impedance and Eddy Current Spectroscopy for NondestructiveEvaluation of Shot-Peened Ti-6Al-4V. [Masters Thesis]. University of Cincinnati; 2019. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1573572135697661


University of California – Berkeley

3. Tartibi, Mehrzad. A Global Finite Element Reverse Approach for Identifying the Material Elasticity and Current State of Stress.

Degree: Mechanical Engineering, 2015, University of California – Berkeley

 The mechanical response of solids exhibiting complex material behavior has traditionally been determined by fitting constitutive models of specified functional form to experimentally derived force-displacement… (more)

Subjects/Keywords: Mechanical engineering; current state of stress; incremental elasticity tensor; nondestructive residual stress; residual stress; Reverse finite element

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APA (6th Edition):

Tartibi, M. (2015). A Global Finite Element Reverse Approach for Identifying the Material Elasticity and Current State of Stress. (Thesis). University of California – Berkeley. Retrieved from http://www.escholarship.org/uc/item/5gk281w1

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tartibi, Mehrzad. “A Global Finite Element Reverse Approach for Identifying the Material Elasticity and Current State of Stress.” 2015. Thesis, University of California – Berkeley. Accessed October 29, 2020. http://www.escholarship.org/uc/item/5gk281w1.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tartibi, Mehrzad. “A Global Finite Element Reverse Approach for Identifying the Material Elasticity and Current State of Stress.” 2015. Web. 29 Oct 2020.

Vancouver:

Tartibi M. A Global Finite Element Reverse Approach for Identifying the Material Elasticity and Current State of Stress. [Internet] [Thesis]. University of California – Berkeley; 2015. [cited 2020 Oct 29]. Available from: http://www.escholarship.org/uc/item/5gk281w1.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tartibi M. A Global Finite Element Reverse Approach for Identifying the Material Elasticity and Current State of Stress. [Thesis]. University of California – Berkeley; 2015. Available from: http://www.escholarship.org/uc/item/5gk281w1

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

4. Yang, Man-Chun. Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application.

Degree: Master, Electro-Optical Engineering, 2013, NSYSU

 In recent year, the large size and high pixel is need for variously advanced displays. Thus, the stable reliability and standard characteristic is most important… (more)

Subjects/Keywords: indium-gallium-zinc-oxide thin film transistor; UV sensor; light induced instability; high current stress

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APA (6th Edition):

Yang, M. (2013). Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Man-Chun. “Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application.” 2013. Thesis, NSYSU. Accessed October 29, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Man-Chun. “Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application.” 2013. Web. 29 Oct 2020.

Vancouver:

Yang M. Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application. [Internet] [Thesis]. NSYSU; 2013. [cited 2020 Oct 29]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang M. Electrical Analysis and Physical Mechanisms of a-InGaZnO Thin Film Transistors for Optoelectronic Application. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0713113-124938

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

5. Williams, Krystaufeux Dormas. Spatially Resolved, In-situ Monitoring of Crack Growth via the Coupling Current in Aluminum Alloy 5083.

Degree: 2014, Penn State University

 The work discussed in this dissertation is an experimental validation of a body of research that was created to model stress corrosion cracking phenomenon for… (more)

Subjects/Keywords: coupling current; stress corrosion cracking; aluminum alloy 5083; scanning vibrating probe; electrochemistry

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APA (6th Edition):

Williams, K. D. (2014). Spatially Resolved, In-situ Monitoring of Crack Growth via the Coupling Current in Aluminum Alloy 5083. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/22845

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Williams, Krystaufeux Dormas. “Spatially Resolved, In-situ Monitoring of Crack Growth via the Coupling Current in Aluminum Alloy 5083.” 2014. Thesis, Penn State University. Accessed October 29, 2020. https://submit-etda.libraries.psu.edu/catalog/22845.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Williams, Krystaufeux Dormas. “Spatially Resolved, In-situ Monitoring of Crack Growth via the Coupling Current in Aluminum Alloy 5083.” 2014. Web. 29 Oct 2020.

Vancouver:

Williams KD. Spatially Resolved, In-situ Monitoring of Crack Growth via the Coupling Current in Aluminum Alloy 5083. [Internet] [Thesis]. Penn State University; 2014. [cited 2020 Oct 29]. Available from: https://submit-etda.libraries.psu.edu/catalog/22845.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Williams KD. Spatially Resolved, In-situ Monitoring of Crack Growth via the Coupling Current in Aluminum Alloy 5083. [Thesis]. Penn State University; 2014. Available from: https://submit-etda.libraries.psu.edu/catalog/22845

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

6. Lee, Sang-kwon. the coupled environment models for localized corrosions; crevice corrosion and stress corrosion cracking.

Degree: 2013, Penn State University

 This dissertation details my investigation of crevice corrosion and stress corrosion cracking based upon the differential aeration hypothesis, currently considered the physical basis of virtually… (more)

Subjects/Keywords: the coupled environment fracture model; localized corrosion; crevice corrosion; stress corrosion cracking; coupling current

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APA (6th Edition):

Lee, S. (2013). the coupled environment models for localized corrosions; crevice corrosion and stress corrosion cracking. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/18736

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Sang-kwon. “the coupled environment models for localized corrosions; crevice corrosion and stress corrosion cracking.” 2013. Thesis, Penn State University. Accessed October 29, 2020. https://submit-etda.libraries.psu.edu/catalog/18736.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Sang-kwon. “the coupled environment models for localized corrosions; crevice corrosion and stress corrosion cracking.” 2013. Web. 29 Oct 2020.

Vancouver:

Lee S. the coupled environment models for localized corrosions; crevice corrosion and stress corrosion cracking. [Internet] [Thesis]. Penn State University; 2013. [cited 2020 Oct 29]. Available from: https://submit-etda.libraries.psu.edu/catalog/18736.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee S. the coupled environment models for localized corrosions; crevice corrosion and stress corrosion cracking. [Thesis]. Penn State University; 2013. Available from: https://submit-etda.libraries.psu.edu/catalog/18736

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

7. Mareš, Petr. Kontaktování polovodičových čipů: Semiconductor chip interconnection.

Degree: 2019, Brno University of Technology

 The Bachelor Thesis deals with contacting semiconductor chips using wirebonding. Opening chapters devoted to technology interconnect chips with the enviroment and materials to use. Much… (more)

Subjects/Keywords: ANSYS; wirebonding; termomechanické namáhání; proudová hustota; ANSYS; wirebonding; thermomechanical stress; current density

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APA (6th Edition):

Mareš, P. (2019). Kontaktování polovodičových čipů: Semiconductor chip interconnection. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/8483

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mareš, Petr. “Kontaktování polovodičových čipů: Semiconductor chip interconnection.” 2019. Thesis, Brno University of Technology. Accessed October 29, 2020. http://hdl.handle.net/11012/8483.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mareš, Petr. “Kontaktování polovodičových čipů: Semiconductor chip interconnection.” 2019. Web. 29 Oct 2020.

Vancouver:

Mareš P. Kontaktování polovodičových čipů: Semiconductor chip interconnection. [Internet] [Thesis]. Brno University of Technology; 2019. [cited 2020 Oct 29]. Available from: http://hdl.handle.net/11012/8483.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mareš P. Kontaktování polovodičových čipů: Semiconductor chip interconnection. [Thesis]. Brno University of Technology; 2019. Available from: http://hdl.handle.net/11012/8483

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of South Carolina

8. Kumar, Nirnimesh. Measurement and Three-Dimensional Modeling of Hydrodynamic Processes In the Inner Shelf and Surf Zone.

Degree: PhD, Marine Science, 2013, University of South Carolina

  Wind stress and surface gravity waves play an important role in creating and modifying flows on the shelf. The importance of surface waves increases… (more)

Subjects/Keywords: Life Sciences; cuspate foreland; numerical modeling; radiation stress; ROMS-SWAN; vortex force; wave-current interaction

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APA (6th Edition):

Kumar, N. (2013). Measurement and Three-Dimensional Modeling of Hydrodynamic Processes In the Inner Shelf and Surf Zone. (Doctoral Dissertation). University of South Carolina. Retrieved from https://scholarcommons.sc.edu/etd/2343

Chicago Manual of Style (16th Edition):

Kumar, Nirnimesh. “Measurement and Three-Dimensional Modeling of Hydrodynamic Processes In the Inner Shelf and Surf Zone.” 2013. Doctoral Dissertation, University of South Carolina. Accessed October 29, 2020. https://scholarcommons.sc.edu/etd/2343.

MLA Handbook (7th Edition):

Kumar, Nirnimesh. “Measurement and Three-Dimensional Modeling of Hydrodynamic Processes In the Inner Shelf and Surf Zone.” 2013. Web. 29 Oct 2020.

Vancouver:

Kumar N. Measurement and Three-Dimensional Modeling of Hydrodynamic Processes In the Inner Shelf and Surf Zone. [Internet] [Doctoral dissertation]. University of South Carolina; 2013. [cited 2020 Oct 29]. Available from: https://scholarcommons.sc.edu/etd/2343.

Council of Science Editors:

Kumar N. Measurement and Three-Dimensional Modeling of Hydrodynamic Processes In the Inner Shelf and Surf Zone. [Doctoral Dissertation]. University of South Carolina; 2013. Available from: https://scholarcommons.sc.edu/etd/2343


University of Florida

9. Koehler, Andrew D. Impact of Mechanical Stress on AlGaN/GaN HEMT Performance Channel Resistance and Gate Current.

Degree: PhD, Electrical and Computer Engineering, 2011, University of Florida

 AlGaN/GaN high electron mobility transistors (HEMTs) stand out with superb advantages for high-power, high-temperature, high-frequency applications. Internal stress is inherent to state-of-the-art AlGaN/GaN HEMTs and… (more)

Subjects/Keywords: Applied physics; Bending; Compressive stress; Electric current; Electric fields; Electrons; Measuring instruments; Mechanical stress; MODFETS; Tensile stress; factor  – gan  – gate  – gauge  – hemt  – leakage  – strain  – stress

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APA (6th Edition):

Koehler, A. D. (2011). Impact of Mechanical Stress on AlGaN/GaN HEMT Performance Channel Resistance and Gate Current. (Doctoral Dissertation). University of Florida. Retrieved from https://ufdc.ufl.edu/UFE0043630

Chicago Manual of Style (16th Edition):

Koehler, Andrew D. “Impact of Mechanical Stress on AlGaN/GaN HEMT Performance Channel Resistance and Gate Current.” 2011. Doctoral Dissertation, University of Florida. Accessed October 29, 2020. https://ufdc.ufl.edu/UFE0043630.

MLA Handbook (7th Edition):

Koehler, Andrew D. “Impact of Mechanical Stress on AlGaN/GaN HEMT Performance Channel Resistance and Gate Current.” 2011. Web. 29 Oct 2020.

Vancouver:

Koehler AD. Impact of Mechanical Stress on AlGaN/GaN HEMT Performance Channel Resistance and Gate Current. [Internet] [Doctoral dissertation]. University of Florida; 2011. [cited 2020 Oct 29]. Available from: https://ufdc.ufl.edu/UFE0043630.

Council of Science Editors:

Koehler AD. Impact of Mechanical Stress on AlGaN/GaN HEMT Performance Channel Resistance and Gate Current. [Doctoral Dissertation]. University of Florida; 2011. Available from: https://ufdc.ufl.edu/UFE0043630


Robert Gordon University

10. Hebala, Osama Mohamed. Design and analysis of current stress minimalisation controllers in multi-active bridge DC-DC converters.

Degree: PhD, 2020, Robert Gordon University

 Multi active bridge (MAB) DC-DC converters have attracted significant research attention in power conversion applications within DC microgrids, medium voltage DC and high voltage DC… (more)

Subjects/Keywords: RMS current stress; Current stress; Multi-active bridge (MAB); Dual-active bridge (DAB); Particle swarm optimisation (PSO); Triple-phase shift (TPS); Perturb and observe (P&O); Minimum-current point-tracking (MCPT)

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APA (6th Edition):

Hebala, O. M. (2020). Design and analysis of current stress minimalisation controllers in multi-active bridge DC-DC converters. (Doctoral Dissertation). Robert Gordon University. Retrieved from https://rgu-repository.worktribe.com/output/950481 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.809656

Chicago Manual of Style (16th Edition):

Hebala, Osama Mohamed. “Design and analysis of current stress minimalisation controllers in multi-active bridge DC-DC converters.” 2020. Doctoral Dissertation, Robert Gordon University. Accessed October 29, 2020. https://rgu-repository.worktribe.com/output/950481 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.809656.

MLA Handbook (7th Edition):

Hebala, Osama Mohamed. “Design and analysis of current stress minimalisation controllers in multi-active bridge DC-DC converters.” 2020. Web. 29 Oct 2020.

Vancouver:

Hebala OM. Design and analysis of current stress minimalisation controllers in multi-active bridge DC-DC converters. [Internet] [Doctoral dissertation]. Robert Gordon University; 2020. [cited 2020 Oct 29]. Available from: https://rgu-repository.worktribe.com/output/950481 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.809656.

Council of Science Editors:

Hebala OM. Design and analysis of current stress minimalisation controllers in multi-active bridge DC-DC converters. [Doctoral Dissertation]. Robert Gordon University; 2020. Available from: https://rgu-repository.worktribe.com/output/950481 ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.809656


University of Florida

11. Gupta, Amit. Investigation of Electrical Bias, Mechanical Stress, Temperature and Ambient Effect on AlGaN/GaN Hemt Time-Dependent Degradation.

Degree: PhD, Electrical and Computer Engineering, 2013, University of Florida

 AlGaN/GaN HEMT technology is promising for RF and high power applications. However commercial usability of this technology is currently hindered because of its limited electrical… (more)

Subjects/Keywords: Electric current; Electric fields; Electric potential; Electrical bias; Mechanical stress; Narrative devices; Semiconductors; Temperature dependence; Tensile stress; Time dependence; algan  – degradation  – diffusion  – gan  – hemt  – reliability  – stress  – time-dependent

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gupta, A. (2013). Investigation of Electrical Bias, Mechanical Stress, Temperature and Ambient Effect on AlGaN/GaN Hemt Time-Dependent Degradation. (Doctoral Dissertation). University of Florida. Retrieved from https://ufdc.ufl.edu/UFE0045920

Chicago Manual of Style (16th Edition):

Gupta, Amit. “Investigation of Electrical Bias, Mechanical Stress, Temperature and Ambient Effect on AlGaN/GaN Hemt Time-Dependent Degradation.” 2013. Doctoral Dissertation, University of Florida. Accessed October 29, 2020. https://ufdc.ufl.edu/UFE0045920.

MLA Handbook (7th Edition):

Gupta, Amit. “Investigation of Electrical Bias, Mechanical Stress, Temperature and Ambient Effect on AlGaN/GaN Hemt Time-Dependent Degradation.” 2013. Web. 29 Oct 2020.

Vancouver:

Gupta A. Investigation of Electrical Bias, Mechanical Stress, Temperature and Ambient Effect on AlGaN/GaN Hemt Time-Dependent Degradation. [Internet] [Doctoral dissertation]. University of Florida; 2013. [cited 2020 Oct 29]. Available from: https://ufdc.ufl.edu/UFE0045920.

Council of Science Editors:

Gupta A. Investigation of Electrical Bias, Mechanical Stress, Temperature and Ambient Effect on AlGaN/GaN Hemt Time-Dependent Degradation. [Doctoral Dissertation]. University of Florida; 2013. Available from: https://ufdc.ufl.edu/UFE0045920


University of Florida

12. Chu, Min. Characterization and Modeling of Strained Si FET and GaN HEMT Devices.

Degree: PhD, Electrical and Computer Engineering, 2011, University of Florida

 Metal-oxide-semiconductor field-effect transistors (MOSFETs) have shown impressive performance improvements over the past 10 years by incorporating strained silicon (Si) technology. Concurrently, interest in alternate device… (more)

Subjects/Keywords: Atoms; Bending; Electric current; Electric fields; Electrons; Mechanical stress; MODFETS; Silicon; Simulations; Tensile stress; hemt  – leakage  – mobility  – mosfet  – piezoresistance  – reliability  – strain  – stress

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APA (6th Edition):

Chu, M. (2011). Characterization and Modeling of Strained Si FET and GaN HEMT Devices. (Doctoral Dissertation). University of Florida. Retrieved from https://ufdc.ufl.edu/UFE0043631

Chicago Manual of Style (16th Edition):

Chu, Min. “Characterization and Modeling of Strained Si FET and GaN HEMT Devices.” 2011. Doctoral Dissertation, University of Florida. Accessed October 29, 2020. https://ufdc.ufl.edu/UFE0043631.

MLA Handbook (7th Edition):

Chu, Min. “Characterization and Modeling of Strained Si FET and GaN HEMT Devices.” 2011. Web. 29 Oct 2020.

Vancouver:

Chu M. Characterization and Modeling of Strained Si FET and GaN HEMT Devices. [Internet] [Doctoral dissertation]. University of Florida; 2011. [cited 2020 Oct 29]. Available from: https://ufdc.ufl.edu/UFE0043631.

Council of Science Editors:

Chu M. Characterization and Modeling of Strained Si FET and GaN HEMT Devices. [Doctoral Dissertation]. University of Florida; 2011. Available from: https://ufdc.ufl.edu/UFE0043631


University of Miami

13. Zhang, Fei. On the Variability of the Wind Stress at the Air-Sea Interface.

Degree: PhD, Applied Marine Physics (Marine), 2008, University of Miami

  This dissertation investigates wind-wave-current interaction, wave breaking detection and the analysis of breaking characteristics at the air-sea interface. In-situ data measured during the Shoaling… (more)

Subjects/Keywords: Air-sea Interaction; Wind Stress; Wave; Current

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APA (6th Edition):

Zhang, F. (2008). On the Variability of the Wind Stress at the Air-Sea Interface. (Doctoral Dissertation). University of Miami. Retrieved from https://scholarlyrepository.miami.edu/oa_dissertations/191

Chicago Manual of Style (16th Edition):

Zhang, Fei. “On the Variability of the Wind Stress at the Air-Sea Interface.” 2008. Doctoral Dissertation, University of Miami. Accessed October 29, 2020. https://scholarlyrepository.miami.edu/oa_dissertations/191.

MLA Handbook (7th Edition):

Zhang, Fei. “On the Variability of the Wind Stress at the Air-Sea Interface.” 2008. Web. 29 Oct 2020.

Vancouver:

Zhang F. On the Variability of the Wind Stress at the Air-Sea Interface. [Internet] [Doctoral dissertation]. University of Miami; 2008. [cited 2020 Oct 29]. Available from: https://scholarlyrepository.miami.edu/oa_dissertations/191.

Council of Science Editors:

Zhang F. On the Variability of the Wind Stress at the Air-Sea Interface. [Doctoral Dissertation]. University of Miami; 2008. Available from: https://scholarlyrepository.miami.edu/oa_dissertations/191


University of Illinois – Urbana-Champaign

14. Banjavcic, Scott David. Understanding longitudinal ADCP measurements to determine water velocities for open channel flow.

Degree: PhD, Civil Engineering, 2018, University of Illinois – Urbana-Champaign

 Despite the advances in technology, the traditional standard of practice of measuring velocities in open channels relies on the historically proven methodology that was primarily… (more)

Subjects/Keywords: accoustic Doppler current profiler; ADCP; open channel flow, depth-averaged velocity, velocity profile, bed shear stress, longitudinal ADCP

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APA (6th Edition):

Banjavcic, S. D. (2018). Understanding longitudinal ADCP measurements to determine water velocities for open channel flow. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/100936

Chicago Manual of Style (16th Edition):

Banjavcic, Scott David. “Understanding longitudinal ADCP measurements to determine water velocities for open channel flow.” 2018. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed October 29, 2020. http://hdl.handle.net/2142/100936.

MLA Handbook (7th Edition):

Banjavcic, Scott David. “Understanding longitudinal ADCP measurements to determine water velocities for open channel flow.” 2018. Web. 29 Oct 2020.

Vancouver:

Banjavcic SD. Understanding longitudinal ADCP measurements to determine water velocities for open channel flow. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2018. [cited 2020 Oct 29]. Available from: http://hdl.handle.net/2142/100936.

Council of Science Editors:

Banjavcic SD. Understanding longitudinal ADCP measurements to determine water velocities for open channel flow. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2018. Available from: http://hdl.handle.net/2142/100936


University of Florida

15. Cheney, David James. Determination of Semiconductor Device Reliability through Electrical and Optical Characterization and Stressing.

Degree: PhD, Electrical and Computer Engineering, 2012, University of Florida

 The traditional industry-accepted method of determining the lifetime of a semiconductor is based-on acceleration aging through elevated operating temperatures. As the semiconductor technology advances, the… (more)

Subjects/Keywords: Data acquisition; Drains; Electric current; Electric potential; Electrons; Narrative devices; Optical pumping; Software; Stress tests; Wavelengths; gan  – hemt  – optical  – reliability  – semiconductor

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APA (6th Edition):

Cheney, D. J. (2012). Determination of Semiconductor Device Reliability through Electrical and Optical Characterization and Stressing. (Doctoral Dissertation). University of Florida. Retrieved from https://ufdc.ufl.edu/UFE0044885

Chicago Manual of Style (16th Edition):

Cheney, David James. “Determination of Semiconductor Device Reliability through Electrical and Optical Characterization and Stressing.” 2012. Doctoral Dissertation, University of Florida. Accessed October 29, 2020. https://ufdc.ufl.edu/UFE0044885.

MLA Handbook (7th Edition):

Cheney, David James. “Determination of Semiconductor Device Reliability through Electrical and Optical Characterization and Stressing.” 2012. Web. 29 Oct 2020.

Vancouver:

Cheney DJ. Determination of Semiconductor Device Reliability through Electrical and Optical Characterization and Stressing. [Internet] [Doctoral dissertation]. University of Florida; 2012. [cited 2020 Oct 29]. Available from: https://ufdc.ufl.edu/UFE0044885.

Council of Science Editors:

Cheney DJ. Determination of Semiconductor Device Reliability through Electrical and Optical Characterization and Stressing. [Doctoral Dissertation]. University of Florida; 2012. Available from: https://ufdc.ufl.edu/UFE0044885


University of Maryland

16. Gu, Junjun. Enhancing Power Efficient Design Techniques in Deep Submicron Era.

Degree: Electrical Engineering, 2011, University of Maryland

 Excessive power dissipation has been one of the major bottlenecks for design and manufacture in the past couple of decades. Power efficient design has become… (more)

Subjects/Keywords: Computer engineering; deep submicron technology; logic synthesis; low power design; mechanical stress; peak current; temperature-aware design

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APA (6th Edition):

Gu, J. (2011). Enhancing Power Efficient Design Techniques in Deep Submicron Era. (Thesis). University of Maryland. Retrieved from http://hdl.handle.net/1903/11869

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gu, Junjun. “Enhancing Power Efficient Design Techniques in Deep Submicron Era.” 2011. Thesis, University of Maryland. Accessed October 29, 2020. http://hdl.handle.net/1903/11869.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gu, Junjun. “Enhancing Power Efficient Design Techniques in Deep Submicron Era.” 2011. Web. 29 Oct 2020.

Vancouver:

Gu J. Enhancing Power Efficient Design Techniques in Deep Submicron Era. [Internet] [Thesis]. University of Maryland; 2011. [cited 2020 Oct 29]. Available from: http://hdl.handle.net/1903/11869.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gu J. Enhancing Power Efficient Design Techniques in Deep Submicron Era. [Thesis]. University of Maryland; 2011. Available from: http://hdl.handle.net/1903/11869

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Cincinnati

17. ABU-NABAH, BASSAM ABDEL JABER. EDDY CURRENT SPECTROSCOPY FOR NEAR-SURFACE RESIDUAL STRESS PROFILING IN SURFACE TREATED NONMAGNETIC ENGINE ALLOYS.

Degree: PhD, Engineering : Aerospace Engineering, 2007, University of Cincinnati

 Recent research results indicated that eddy current conductivity measurements can be exploited for nondestructive evaluation of near-surface residual stresses in surface-treated nickel-base superalloy components. Most… (more)

Subjects/Keywords: Eddy current; Conductivity; Spectroscopy; Residual stress; Shot peening

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APA (6th Edition):

ABU-NABAH, B. A. J. (2007). EDDY CURRENT SPECTROSCOPY FOR NEAR-SURFACE RESIDUAL STRESS PROFILING IN SURFACE TREATED NONMAGNETIC ENGINE ALLOYS. (Doctoral Dissertation). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1186763648

Chicago Manual of Style (16th Edition):

ABU-NABAH, BASSAM ABDEL JABER. “EDDY CURRENT SPECTROSCOPY FOR NEAR-SURFACE RESIDUAL STRESS PROFILING IN SURFACE TREATED NONMAGNETIC ENGINE ALLOYS.” 2007. Doctoral Dissertation, University of Cincinnati. Accessed October 29, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1186763648.

MLA Handbook (7th Edition):

ABU-NABAH, BASSAM ABDEL JABER. “EDDY CURRENT SPECTROSCOPY FOR NEAR-SURFACE RESIDUAL STRESS PROFILING IN SURFACE TREATED NONMAGNETIC ENGINE ALLOYS.” 2007. Web. 29 Oct 2020.

Vancouver:

ABU-NABAH BAJ. EDDY CURRENT SPECTROSCOPY FOR NEAR-SURFACE RESIDUAL STRESS PROFILING IN SURFACE TREATED NONMAGNETIC ENGINE ALLOYS. [Internet] [Doctoral dissertation]. University of Cincinnati; 2007. [cited 2020 Oct 29]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1186763648.

Council of Science Editors:

ABU-NABAH BAJ. EDDY CURRENT SPECTROSCOPY FOR NEAR-SURFACE RESIDUAL STRESS PROFILING IN SURFACE TREATED NONMAGNETIC ENGINE ALLOYS. [Doctoral Dissertation]. University of Cincinnati; 2007. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1186763648


University of Florida

18. Park, Hyunwoo. Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation.

Degree: PhD, Electrical and Computer Engineering, 2011, University of Florida

 Uniaxial strained-silicon (Si) has emerged as a leading technique for enhancing transistor performance for sub-100 nm logic technology for use in commercial and consumer electronics.… (more)

Subjects/Keywords: Compressive stress; Diodes; Electric current; Electrons; Lasers; Mechanical stress; Simulations; Stress functions; Tensile stress; Threshold voltage; dielectrics  – effects  – events  – high-k  – radiation  – single  – strained-si  – stress  – total-ionizing-dose  – transients  – uniaxial

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APA (6th Edition):

Park, H. (2011). Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation. (Doctoral Dissertation). University of Florida. Retrieved from https://ufdc.ufl.edu/UFE0043566

Chicago Manual of Style (16th Edition):

Park, Hyunwoo. “Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation.” 2011. Doctoral Dissertation, University of Florida. Accessed October 29, 2020. https://ufdc.ufl.edu/UFE0043566.

MLA Handbook (7th Edition):

Park, Hyunwoo. “Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation.” 2011. Web. 29 Oct 2020.

Vancouver:

Park H. Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation. [Internet] [Doctoral dissertation]. University of Florida; 2011. [cited 2020 Oct 29]. Available from: https://ufdc.ufl.edu/UFE0043566.

Council of Science Editors:

Park H. Impact of Uniaxial Stress on Silicon Diodes and Metal-Oxide-Semiconductor-Field-Effect-Transistors under Radiation. [Doctoral Dissertation]. University of Florida; 2011. Available from: https://ufdc.ufl.edu/UFE0043566


Georgia Tech

19. Perez Martinez, Rafael. Understanding the physics of hard and soft failure in silicon-germanium heterojunction bipolar transistors.

Degree: MS, Electrical and Computer Engineering, 2019, Georgia Tech

 The objective of this work is to investigate hard and soft failure mechanisms observed when silicon-germanium heterojunction bipolar transistors (SiGe HBTs) are operated outside of… (more)

Subjects/Keywords: SiGe HBT; Reliability; Safe operating area; Mixed-mode stress; High-current stress; Hard failure; Soft failure; Avalanche breakdown; Cutoff frequency; Device physics; Heterojunction bipolar transistors; High-frequency; mm-wave

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APA (6th Edition):

Perez Martinez, R. (2019). Understanding the physics of hard and soft failure in silicon-germanium heterojunction bipolar transistors. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/62702

Chicago Manual of Style (16th Edition):

Perez Martinez, Rafael. “Understanding the physics of hard and soft failure in silicon-germanium heterojunction bipolar transistors.” 2019. Masters Thesis, Georgia Tech. Accessed October 29, 2020. http://hdl.handle.net/1853/62702.

MLA Handbook (7th Edition):

Perez Martinez, Rafael. “Understanding the physics of hard and soft failure in silicon-germanium heterojunction bipolar transistors.” 2019. Web. 29 Oct 2020.

Vancouver:

Perez Martinez R. Understanding the physics of hard and soft failure in silicon-germanium heterojunction bipolar transistors. [Internet] [Masters thesis]. Georgia Tech; 2019. [cited 2020 Oct 29]. Available from: http://hdl.handle.net/1853/62702.

Council of Science Editors:

Perez Martinez R. Understanding the physics of hard and soft failure in silicon-germanium heterojunction bipolar transistors. [Masters Thesis]. Georgia Tech; 2019. Available from: http://hdl.handle.net/1853/62702


University of Florida

20. Suthram, Sagar. Study of the Piezoresistive Properties of Si, Ge and GaAs MOSFETS Using a Novel Flexure Based Wafer Bending Setup.

Degree: PhD, Electrical and Computer Engineering, 2008, University of Florida

 For more than three decades, transistor density in microprocessor chips has doubled every two years keeping with Moore?s law by following the traditional scaling methods.… (more)

Subjects/Keywords: Bending; Compressive stress; Drains; Electric current; Electrons; Mechanical stress; Narrative devices; Stress functions; Tensile stress; Velocity

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APA (6th Edition):

Suthram, S. (2008). Study of the Piezoresistive Properties of Si, Ge and GaAs MOSFETS Using a Novel Flexure Based Wafer Bending Setup. (Doctoral Dissertation). University of Florida. Retrieved from https://ufdc.ufl.edu/UFE0022569

Chicago Manual of Style (16th Edition):

Suthram, Sagar. “Study of the Piezoresistive Properties of Si, Ge and GaAs MOSFETS Using a Novel Flexure Based Wafer Bending Setup.” 2008. Doctoral Dissertation, University of Florida. Accessed October 29, 2020. https://ufdc.ufl.edu/UFE0022569.

MLA Handbook (7th Edition):

Suthram, Sagar. “Study of the Piezoresistive Properties of Si, Ge and GaAs MOSFETS Using a Novel Flexure Based Wafer Bending Setup.” 2008. Web. 29 Oct 2020.

Vancouver:

Suthram S. Study of the Piezoresistive Properties of Si, Ge and GaAs MOSFETS Using a Novel Flexure Based Wafer Bending Setup. [Internet] [Doctoral dissertation]. University of Florida; 2008. [cited 2020 Oct 29]. Available from: https://ufdc.ufl.edu/UFE0022569.

Council of Science Editors:

Suthram S. Study of the Piezoresistive Properties of Si, Ge and GaAs MOSFETS Using a Novel Flexure Based Wafer Bending Setup. [Doctoral Dissertation]. University of Florida; 2008. Available from: https://ufdc.ufl.edu/UFE0022569


University of Florida

21. Liu, Jingjing. Strain Induced Effects on Lateral Power MOSFETs.

Degree: MS, Electrical and Computer Engineering, 2009, University of Florida

 Power MOSFETs are designed for maximum breakdown voltage with minimum on-resistance. A longer channel or thicker drift region is needed to obtain a higher breakdown… (more)

Subjects/Keywords: Bending; Compressive stress; Drains; Electric current; Electric potential; Electrons; Sexually transmitted diseases; Silicon; Stress distribution; Tensile stress; lateral, mosfet, power, strain

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APA (6th Edition):

Liu, J. (2009). Strain Induced Effects on Lateral Power MOSFETs. (Masters Thesis). University of Florida. Retrieved from https://ufdc.ufl.edu/UFE0041290

Chicago Manual of Style (16th Edition):

Liu, Jingjing. “Strain Induced Effects on Lateral Power MOSFETs.” 2009. Masters Thesis, University of Florida. Accessed October 29, 2020. https://ufdc.ufl.edu/UFE0041290.

MLA Handbook (7th Edition):

Liu, Jingjing. “Strain Induced Effects on Lateral Power MOSFETs.” 2009. Web. 29 Oct 2020.

Vancouver:

Liu J. Strain Induced Effects on Lateral Power MOSFETs. [Internet] [Masters thesis]. University of Florida; 2009. [cited 2020 Oct 29]. Available from: https://ufdc.ufl.edu/UFE0041290.

Council of Science Editors:

Liu J. Strain Induced Effects on Lateral Power MOSFETs. [Masters Thesis]. University of Florida; 2009. Available from: https://ufdc.ufl.edu/UFE0041290


Texas A&M University

22. Alrushaid, Tariq I S I. Wind-Driven Nearshore Dynamics in the Gulf of Mexico.

Degree: PhD, Oceanography, 2018, Texas A&M University

 Coastlines around the Gulf of Mexico are dynamic, due to prevailing energetic wind systems such as frequent cold fronts and diurnal wind systems. In the… (more)

Subjects/Keywords: sea breeze; land breeze; onshore cold front; offshore cold front; Nortes; Gulf breeze; surf zone; inner-surf zone; inner-shelf region; nearshore currents; turbulent kinetic energy; turbulent kinetic energy dissipation rate; bed shear stress; sediment flux; total suspended sediment flux; erosion; accretion; acoustic Doppler current meter; beach morphology; current circulation; LATEX shelf current; field measurement

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APA (6th Edition):

Alrushaid, T. I. S. I. (2018). Wind-Driven Nearshore Dynamics in the Gulf of Mexico. (Doctoral Dissertation). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/173573

Chicago Manual of Style (16th Edition):

Alrushaid, Tariq I S I. “Wind-Driven Nearshore Dynamics in the Gulf of Mexico.” 2018. Doctoral Dissertation, Texas A&M University. Accessed October 29, 2020. http://hdl.handle.net/1969.1/173573.

MLA Handbook (7th Edition):

Alrushaid, Tariq I S I. “Wind-Driven Nearshore Dynamics in the Gulf of Mexico.” 2018. Web. 29 Oct 2020.

Vancouver:

Alrushaid TISI. Wind-Driven Nearshore Dynamics in the Gulf of Mexico. [Internet] [Doctoral dissertation]. Texas A&M University; 2018. [cited 2020 Oct 29]. Available from: http://hdl.handle.net/1969.1/173573.

Council of Science Editors:

Alrushaid TISI. Wind-Driven Nearshore Dynamics in the Gulf of Mexico. [Doctoral Dissertation]. Texas A&M University; 2018. Available from: http://hdl.handle.net/1969.1/173573

23. George Luiz Gomes de Oliveira. AvaliaÃÃo de tensÃes residuais de soldagem em chapas planas do aÃo estrutural ASTM A516 g70.

Degree: Master, 2009, Universidade Federal do Ceará

O objetivo principal desse trabalho foi avaliar o efeito do procedimento de soldagem empregado, com foco na energia de soldagem, no tipo de chanfro empregado… (more)

Subjects/Keywords: ENGENHARIA DE MATERIAIS E METALURGICA; tensÃes residuais; corrente de soldagem; velocidade de soldagem; chanfro; dupla camada; residual stress; welding current; welding speed; chamfer; double layer technique

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APA (6th Edition):

Oliveira, G. L. G. d. (2009). AvaliaÃÃo de tensÃes residuais de soldagem em chapas planas do aÃo estrutural ASTM A516 g70. (Masters Thesis). Universidade Federal do Ceará. Retrieved from http://www.teses.ufc.br/tde_busca/arquivo.php?codArquivo=3197 ;

Chicago Manual of Style (16th Edition):

Oliveira, George Luiz Gomes de. “AvaliaÃÃo de tensÃes residuais de soldagem em chapas planas do aÃo estrutural ASTM A516 g70.” 2009. Masters Thesis, Universidade Federal do Ceará. Accessed October 29, 2020. http://www.teses.ufc.br/tde_busca/arquivo.php?codArquivo=3197 ;.

MLA Handbook (7th Edition):

Oliveira, George Luiz Gomes de. “AvaliaÃÃo de tensÃes residuais de soldagem em chapas planas do aÃo estrutural ASTM A516 g70.” 2009. Web. 29 Oct 2020.

Vancouver:

Oliveira GLGd. AvaliaÃÃo de tensÃes residuais de soldagem em chapas planas do aÃo estrutural ASTM A516 g70. [Internet] [Masters thesis]. Universidade Federal do Ceará 2009. [cited 2020 Oct 29]. Available from: http://www.teses.ufc.br/tde_busca/arquivo.php?codArquivo=3197 ;.

Council of Science Editors:

Oliveira GLGd. AvaliaÃÃo de tensÃes residuais de soldagem em chapas planas do aÃo estrutural ASTM A516 g70. [Masters Thesis]. Universidade Federal do Ceará 2009. Available from: http://www.teses.ufc.br/tde_busca/arquivo.php?codArquivo=3197 ;


Vanderbilt University

24. Rezzak, Nadia. Total ionizing dose effects in advanced CMOS technologies.

Degree: PhD, Electrical Engineering, 2012, Vanderbilt University

 Key aspects of the total-ionizing dose (TID) response of advanced complementary metal–oxide–semiconductor (CMOS) technologies are examined. As technology scales down, stress can strongly affect radiation-induced… (more)

Subjects/Keywords: Fully depleted SOI; Partially depleted SOI; Variability; total ionizing dose (TID); sidewall doping; shallow trench isolation (STI); MOSFET off-state leakage current; mechanical stress; Active space distance

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APA (6th Edition):

Rezzak, N. (2012). Total ionizing dose effects in advanced CMOS technologies. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/15330

Chicago Manual of Style (16th Edition):

Rezzak, Nadia. “Total ionizing dose effects in advanced CMOS technologies.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed October 29, 2020. http://hdl.handle.net/1803/15330.

MLA Handbook (7th Edition):

Rezzak, Nadia. “Total ionizing dose effects in advanced CMOS technologies.” 2012. Web. 29 Oct 2020.

Vancouver:

Rezzak N. Total ionizing dose effects in advanced CMOS technologies. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2020 Oct 29]. Available from: http://hdl.handle.net/1803/15330.

Council of Science Editors:

Rezzak N. Total ionizing dose effects in advanced CMOS technologies. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://hdl.handle.net/1803/15330

25. Newell, Carl. A Mathematical and Numerical Examination of Wave-Current Interaction and Wave-Driven Hydrodynamics .

Degree: 2010, National University of Ireland – Galway

 A new derivation of an elliptic extended mild-slope wave equation, including the effects of energy dissipation and current, has been accomplished. A Galerkin-Eigenfunction method was… (more)

Subjects/Keywords: Current; Waves; Hydrodynamics; Energy Dissipation; Helmholtz; Radiation Stress; Civil Engineering

…including the effects of energy dissipation and current, has been accomplished. A Galerkin… …Finite Element Wave-Current Interaction Model (NM-WCIM). The NM-WCIM solves for the… …current interaction. A novel post-processing technique for the NM-WCIM has been developed to… …The NM-WCIM was used to examine scenarios with complex wave-current interaction and… …driven hydrodynamics in and around the surf-zone. These equations use a radiation stress… 

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APA (6th Edition):

Newell, C. (2010). A Mathematical and Numerical Examination of Wave-Current Interaction and Wave-Driven Hydrodynamics . (Thesis). National University of Ireland – Galway. Retrieved from http://hdl.handle.net/10379/1966

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Newell, Carl. “A Mathematical and Numerical Examination of Wave-Current Interaction and Wave-Driven Hydrodynamics .” 2010. Thesis, National University of Ireland – Galway. Accessed October 29, 2020. http://hdl.handle.net/10379/1966.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Newell, Carl. “A Mathematical and Numerical Examination of Wave-Current Interaction and Wave-Driven Hydrodynamics .” 2010. Web. 29 Oct 2020.

Vancouver:

Newell C. A Mathematical and Numerical Examination of Wave-Current Interaction and Wave-Driven Hydrodynamics . [Internet] [Thesis]. National University of Ireland – Galway; 2010. [cited 2020 Oct 29]. Available from: http://hdl.handle.net/10379/1966.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Newell C. A Mathematical and Numerical Examination of Wave-Current Interaction and Wave-Driven Hydrodynamics . [Thesis]. National University of Ireland – Galway; 2010. Available from: http://hdl.handle.net/10379/1966

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

26. Veselý, Tomáš. Výpočet profilových vodičů pro přípojnice v rozvodných zařízeních: Calculation of the profile busbar conductors in distribution equipment.

Degree: 2019, Brno University of Technology

 Proportioning of busbar system for thermal and dynamic effects of short circuit current in terms of safety and economic efficiency is very important. Bachelor thesis… (more)

Subjects/Keywords: přípojnice; účinky zkratového proudu; zkratová odolnost; minimální průřez vodiče; ohybové namáhání; busbar; the effects of short-circuit current; short-circuit resistance; the minimum conductor size; bending stress

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APA (6th Edition):

Veselý, T. (2019). Výpočet profilových vodičů pro přípojnice v rozvodných zařízeních: Calculation of the profile busbar conductors in distribution equipment. (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/60406

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Veselý, Tomáš. “Výpočet profilových vodičů pro přípojnice v rozvodných zařízeních: Calculation of the profile busbar conductors in distribution equipment.” 2019. Thesis, Brno University of Technology. Accessed October 29, 2020. http://hdl.handle.net/11012/60406.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Veselý, Tomáš. “Výpočet profilových vodičů pro přípojnice v rozvodných zařízeních: Calculation of the profile busbar conductors in distribution equipment.” 2019. Web. 29 Oct 2020.

Vancouver:

Veselý T. Výpočet profilových vodičů pro přípojnice v rozvodných zařízeních: Calculation of the profile busbar conductors in distribution equipment. [Internet] [Thesis]. Brno University of Technology; 2019. [cited 2020 Oct 29]. Available from: http://hdl.handle.net/11012/60406.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Veselý T. Výpočet profilových vodičů pro přípojnice v rozvodných zařízeních: Calculation of the profile busbar conductors in distribution equipment. [Thesis]. Brno University of Technology; 2019. Available from: http://hdl.handle.net/11012/60406

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Florida

27. Sahin, Cihan. Muddy Sea-Floor Response to Wave Action, Atchafalaya Shelf, Louisiana, USA.

Degree: PhD, Coastal and Oceanographic Engineering - Civil and Coastal Engineering, 2012, University of Florida

 The interaction between muddy sea-floor and the hydrodynamics is investigated based on wave, current, sediment and acoustic backscatter observations made in 2006 and 2008 on… (more)

Subjects/Keywords: Density; Mud; Salinity; Sediment transport; Sediments; Shear stress; Simulations; Turbulence; Velocity; Waves; atchafalaya  – cohesive  – concentration  – current  – floc  – mud  – nearshore  – ocean  – rheology  – sediment  – turbulence  – wave

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APA (6th Edition):

Sahin, C. (2012). Muddy Sea-Floor Response to Wave Action, Atchafalaya Shelf, Louisiana, USA. (Doctoral Dissertation). University of Florida. Retrieved from https://ufdc.ufl.edu/UFE0044592

Chicago Manual of Style (16th Edition):

Sahin, Cihan. “Muddy Sea-Floor Response to Wave Action, Atchafalaya Shelf, Louisiana, USA.” 2012. Doctoral Dissertation, University of Florida. Accessed October 29, 2020. https://ufdc.ufl.edu/UFE0044592.

MLA Handbook (7th Edition):

Sahin, Cihan. “Muddy Sea-Floor Response to Wave Action, Atchafalaya Shelf, Louisiana, USA.” 2012. Web. 29 Oct 2020.

Vancouver:

Sahin C. Muddy Sea-Floor Response to Wave Action, Atchafalaya Shelf, Louisiana, USA. [Internet] [Doctoral dissertation]. University of Florida; 2012. [cited 2020 Oct 29]. Available from: https://ufdc.ufl.edu/UFE0044592.

Council of Science Editors:

Sahin C. Muddy Sea-Floor Response to Wave Action, Atchafalaya Shelf, Louisiana, USA. [Doctoral Dissertation]. University of Florida; 2012. Available from: https://ufdc.ufl.edu/UFE0044592


University of Cincinnati

28. YU, FENG. NONDESTRUCTIVE EVALUATION OF NEAR-SURFACE RESIDUAL STRESS IN SHOT-PEENED NICKEL-BASE SUPERALLOYS.

Degree: PhD, Engineering : Aerospace Engineering, 2005, University of Cincinnati

 Surface enhancement methods, which produce beneficial compressive residual stresses and increased hardness in a shallow near-surface region, are widely used in a number of industrial… (more)

Subjects/Keywords: Engineering, Aerospace; NDE; Eddy Current; Residual Stress; Shot Peening; Engine Alloy

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

YU, F. (2005). NONDESTRUCTIVE EVALUATION OF NEAR-SURFACE RESIDUAL STRESS IN SHOT-PEENED NICKEL-BASE SUPERALLOYS. (Doctoral Dissertation). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1130282650

Chicago Manual of Style (16th Edition):

YU, FENG. “NONDESTRUCTIVE EVALUATION OF NEAR-SURFACE RESIDUAL STRESS IN SHOT-PEENED NICKEL-BASE SUPERALLOYS.” 2005. Doctoral Dissertation, University of Cincinnati. Accessed October 29, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1130282650.

MLA Handbook (7th Edition):

YU, FENG. “NONDESTRUCTIVE EVALUATION OF NEAR-SURFACE RESIDUAL STRESS IN SHOT-PEENED NICKEL-BASE SUPERALLOYS.” 2005. Web. 29 Oct 2020.

Vancouver:

YU F. NONDESTRUCTIVE EVALUATION OF NEAR-SURFACE RESIDUAL STRESS IN SHOT-PEENED NICKEL-BASE SUPERALLOYS. [Internet] [Doctoral dissertation]. University of Cincinnati; 2005. [cited 2020 Oct 29]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1130282650.

Council of Science Editors:

YU F. NONDESTRUCTIVE EVALUATION OF NEAR-SURFACE RESIDUAL STRESS IN SHOT-PEENED NICKEL-BASE SUPERALLOYS. [Doctoral Dissertation]. University of Cincinnati; 2005. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1130282650


The Ohio State University

29. Frank, Donya P. Wave-Current Bottom Boundary Layer Interactions.

Degree: MS, Civil Engineering, 2008, The Ohio State University

 Wave-current bottom boundary layer interactions over flat and rippled beds areexamined using a quasi-three-dimensional non-hydrostatic numerical model, Dune.Dune solves the Reynolds-Averaged Navier-Stokes (RANS) equations with… (more)

Subjects/Keywords: Civil Engineering; Ocean Engineering; waves-current bottom boundary layer; bed stress

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Frank, D. P. (2008). Wave-Current Bottom Boundary Layer Interactions. (Masters Thesis). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1229087949

Chicago Manual of Style (16th Edition):

Frank, Donya P. “Wave-Current Bottom Boundary Layer Interactions.” 2008. Masters Thesis, The Ohio State University. Accessed October 29, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=osu1229087949.

MLA Handbook (7th Edition):

Frank, Donya P. “Wave-Current Bottom Boundary Layer Interactions.” 2008. Web. 29 Oct 2020.

Vancouver:

Frank DP. Wave-Current Bottom Boundary Layer Interactions. [Internet] [Masters thesis]. The Ohio State University; 2008. [cited 2020 Oct 29]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1229087949.

Council of Science Editors:

Frank DP. Wave-Current Bottom Boundary Layer Interactions. [Masters Thesis]. The Ohio State University; 2008. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1229087949


University of Florida

30. Choi, Youn. Impact of Mechanical Stress on Silicon and Germanium Metal-Oxide-Semiconductor Devices Channel Mobility, Gate Tunneling Currents, Threshold Voltage, and Gate Stack.

Degree: PhD, Electrical and Computer Engineering, 2008, University of Florida

 This dissertation explores impact of uniaxial mechanical stress on metal-oxidesemiconductor devices in terms of channel mobility, gate direct tunneling current, trap-assisted gate tunneling current, threshold… (more)

Subjects/Keywords: Capacitors; Compressive stress; Dielectric materials; Electric current; Electron tunneling; Electrons; Mechanical stress; Narrative devices; Silicon; Tensile stress; germanium, hfsion, leakage, mobility, mos, reliability, silicon, strain, threshold, uniaxial

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Choi, Y. (2008). Impact of Mechanical Stress on Silicon and Germanium Metal-Oxide-Semiconductor Devices Channel Mobility, Gate Tunneling Currents, Threshold Voltage, and Gate Stack. (Doctoral Dissertation). University of Florida. Retrieved from https://ufdc.ufl.edu/UFE0022864

Chicago Manual of Style (16th Edition):

Choi, Youn. “Impact of Mechanical Stress on Silicon and Germanium Metal-Oxide-Semiconductor Devices Channel Mobility, Gate Tunneling Currents, Threshold Voltage, and Gate Stack.” 2008. Doctoral Dissertation, University of Florida. Accessed October 29, 2020. https://ufdc.ufl.edu/UFE0022864.

MLA Handbook (7th Edition):

Choi, Youn. “Impact of Mechanical Stress on Silicon and Germanium Metal-Oxide-Semiconductor Devices Channel Mobility, Gate Tunneling Currents, Threshold Voltage, and Gate Stack.” 2008. Web. 29 Oct 2020.

Vancouver:

Choi Y. Impact of Mechanical Stress on Silicon and Germanium Metal-Oxide-Semiconductor Devices Channel Mobility, Gate Tunneling Currents, Threshold Voltage, and Gate Stack. [Internet] [Doctoral dissertation]. University of Florida; 2008. [cited 2020 Oct 29]. Available from: https://ufdc.ufl.edu/UFE0022864.

Council of Science Editors:

Choi Y. Impact of Mechanical Stress on Silicon and Germanium Metal-Oxide-Semiconductor Devices Channel Mobility, Gate Tunneling Currents, Threshold Voltage, and Gate Stack. [Doctoral Dissertation]. University of Florida; 2008. Available from: https://ufdc.ufl.edu/UFE0022864

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