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You searched for subject:(Cu interconnects). Showing records 1 – 4 of 4 total matches.

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1. Cao, Linjun. Effects of scaling on microstructure evolution of Cu nanolines and impact on electromigration reliability.

Degree: PhD, Materials Science and Engineering, 2014, University of Texas – Austin

 Scaling can significantly degrade the electromigration (EM) lifetime for Cu interconnects, raising serious reliability concerns. Different methods have emerged to enhance the EM resistance of… (more)

Subjects/Keywords: Electromigration; Cu interconnects; Microstructure; Scaling

Cu Interconnects… …Scaling on Microstructure Evolution of Cu Interconnects ..68 4.1 Introduction… …Formation in Cu Interconnects...........................................................110 5.1… …110 5.2 Stress Evolution in Cu Interconnects during EM .................................111… …Figure 3.11 Resistance traces of Cu(Mn) interconnects (Wmin) with different… 

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APA (6th Edition):

Cao, L. (2014). Effects of scaling on microstructure evolution of Cu nanolines and impact on electromigration reliability. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/31538

Chicago Manual of Style (16th Edition):

Cao, Linjun. “Effects of scaling on microstructure evolution of Cu nanolines and impact on electromigration reliability.” 2014. Doctoral Dissertation, University of Texas – Austin. Accessed October 17, 2019. http://hdl.handle.net/2152/31538.

MLA Handbook (7th Edition):

Cao, Linjun. “Effects of scaling on microstructure evolution of Cu nanolines and impact on electromigration reliability.” 2014. Web. 17 Oct 2019.

Vancouver:

Cao L. Effects of scaling on microstructure evolution of Cu nanolines and impact on electromigration reliability. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2014. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/2152/31538.

Council of Science Editors:

Cao L. Effects of scaling on microstructure evolution of Cu nanolines and impact on electromigration reliability. [Doctoral Dissertation]. University of Texas – Austin; 2014. Available from: http://hdl.handle.net/2152/31538


University of Houston

2. Dole, Nikhil. Control of Metallurgical, Magnetic and Electrical Properties of Electrodeposited CoFeNi Thin Films and Cu Nanostructures.

Degree: Electrical and Computer Engineering, Department of, 2014, University of Houston

 The ever increasing quality and reliability demand of microsystems indicate that the electrodeposited magnetic alloys used for their fabrication should have minimum possible magnetic losses… (more)

Subjects/Keywords: Soft magnetic alloys; Saturation Magnetization; coercivity; Resistivity; Cu interconnects; nano-scale; strained annealing; critical dimension; in-situ stress/strain measurements

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APA (6th Edition):

Dole, N. (2014). Control of Metallurgical, Magnetic and Electrical Properties of Electrodeposited CoFeNi Thin Films and Cu Nanostructures. (Thesis). University of Houston. Retrieved from http://hdl.handle.net/10657/1432

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dole, Nikhil. “Control of Metallurgical, Magnetic and Electrical Properties of Electrodeposited CoFeNi Thin Films and Cu Nanostructures.” 2014. Thesis, University of Houston. Accessed October 17, 2019. http://hdl.handle.net/10657/1432.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dole, Nikhil. “Control of Metallurgical, Magnetic and Electrical Properties of Electrodeposited CoFeNi Thin Films and Cu Nanostructures.” 2014. Web. 17 Oct 2019.

Vancouver:

Dole N. Control of Metallurgical, Magnetic and Electrical Properties of Electrodeposited CoFeNi Thin Films and Cu Nanostructures. [Internet] [Thesis]. University of Houston; 2014. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/10657/1432.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dole N. Control of Metallurgical, Magnetic and Electrical Properties of Electrodeposited CoFeNi Thin Films and Cu Nanostructures. [Thesis]. University of Houston; 2014. Available from: http://hdl.handle.net/10657/1432

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

3. Ceyhan, Ahmet. Interconnects for future technology generations - conventional CMOS with copper/low-k and beyond.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 The limitations of the conventional Cu/low-k interconnect technology for use in future ultra-scaled integrated circuits down to 7 nm in the year 2020 are investigated… (more)

Subjects/Keywords: Interconnects; Cu/low-k; Carbon nanotubes; Benchmarking; Tunneling FETs; Carbon nanotube FETs; Physical design and optimization

…66 Figure 16 Comparison of the resistance p.u.l. associated with Cu interconnects and SWNT… …68 Figure 17 Comparison of the capacitance p.u.l. associated with Cu interconnects and SWNT… …p.u.l. for a SWNT bundle is the same as the Cu interconnects [89]. . . . . . . . 68… …Figure 18 Comparison of the RC product p.u.l. squared associated with Cu interconnects, bundles… …tubes in a single layer. The bundles are the same size as Cu interconnects and the density of… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ceyhan, A. (2014). Interconnects for future technology generations - conventional CMOS with copper/low-k and beyond. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53080

Chicago Manual of Style (16th Edition):

Ceyhan, Ahmet. “Interconnects for future technology generations - conventional CMOS with copper/low-k and beyond.” 2014. Doctoral Dissertation, Georgia Tech. Accessed October 17, 2019. http://hdl.handle.net/1853/53080.

MLA Handbook (7th Edition):

Ceyhan, Ahmet. “Interconnects for future technology generations - conventional CMOS with copper/low-k and beyond.” 2014. Web. 17 Oct 2019.

Vancouver:

Ceyhan A. Interconnects for future technology generations - conventional CMOS with copper/low-k and beyond. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2019 Oct 17]. Available from: http://hdl.handle.net/1853/53080.

Council of Science Editors:

Ceyhan A. Interconnects for future technology generations - conventional CMOS with copper/low-k and beyond. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/53080

4. NGWAN VOON CHENG. Intra-level dielectric reliability in deep sub-micron copper interconnects.

Degree: 2004, National University of Singapore

Subjects/Keywords: Intra-level Dielectric Reliability; Cu Interconnects; Low-k dielectric; Dielectric Barrier; Surface Treatment; Soft Breakdown.

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

CHENG, N. V. (2004). Intra-level dielectric reliability in deep sub-micron copper interconnects. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/14158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

CHENG, NGWAN VOON. “Intra-level dielectric reliability in deep sub-micron copper interconnects.” 2004. Thesis, National University of Singapore. Accessed October 17, 2019. http://scholarbank.nus.edu.sg/handle/10635/14158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

CHENG, NGWAN VOON. “Intra-level dielectric reliability in deep sub-micron copper interconnects.” 2004. Web. 17 Oct 2019.

Vancouver:

CHENG NV. Intra-level dielectric reliability in deep sub-micron copper interconnects. [Internet] [Thesis]. National University of Singapore; 2004. [cited 2019 Oct 17]. Available from: http://scholarbank.nus.edu.sg/handle/10635/14158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

CHENG NV. Intra-level dielectric reliability in deep sub-micron copper interconnects. [Thesis]. National University of Singapore; 2004. Available from: http://scholarbank.nus.edu.sg/handle/10635/14158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

.