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You searched for subject:(Chalcogenide Phase Change Memory). Showing records 1 – 30 of 46472 total matches.

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Rochester Institute of Technology

1. Devasia, Archana. Towards integrating chalcogenide based phase change memory with silicon microelectronics.

Degree: PhD, Microsystems Engineering, 2011, Rochester Institute of Technology

 The continued dominance of floating gate technology as the premier non-volatile memory (NVM) technology is expected to hit a roadblock due to issues associated with… (more)

Subjects/Keywords: Chalcogenide; CMOS; PEELS; Phase change memory; TEM; XRD

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Devasia, A. (2011). Towards integrating chalcogenide based phase change memory with silicon microelectronics. (Doctoral Dissertation). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/13

Chicago Manual of Style (16th Edition):

Devasia, Archana. “Towards integrating chalcogenide based phase change memory with silicon microelectronics.” 2011. Doctoral Dissertation, Rochester Institute of Technology. Accessed January 29, 2020. https://scholarworks.rit.edu/theses/13.

MLA Handbook (7th Edition):

Devasia, Archana. “Towards integrating chalcogenide based phase change memory with silicon microelectronics.” 2011. Web. 29 Jan 2020.

Vancouver:

Devasia A. Towards integrating chalcogenide based phase change memory with silicon microelectronics. [Internet] [Doctoral dissertation]. Rochester Institute of Technology; 2011. [cited 2020 Jan 29]. Available from: https://scholarworks.rit.edu/theses/13.

Council of Science Editors:

Devasia A. Towards integrating chalcogenide based phase change memory with silicon microelectronics. [Doctoral Dissertation]. Rochester Institute of Technology; 2011. Available from: https://scholarworks.rit.edu/theses/13


University of Illinois – Urbana-Champaign

2. Xiong, Feng. Ultra-low power phase change memory with carbon nanotube interconnects.

Degree: MS, 1200, 2010, University of Illinois – Urbana-Champaign

Phase change memory (PCM) is a promising candidate for the next-generation non-volatile data storage, though its high programming current has been a major concern. By… (more)

Subjects/Keywords: phase change memory; GeSbTe (GST); chalcogenide; carbon nanotubes; finite element modeling; COMSOL

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APA (6th Edition):

Xiong, F. (2010). Ultra-low power phase change memory with carbon nanotube interconnects. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/16782

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Xiong, Feng. “Ultra-low power phase change memory with carbon nanotube interconnects.” 2010. Thesis, University of Illinois – Urbana-Champaign. Accessed January 29, 2020. http://hdl.handle.net/2142/16782.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Xiong, Feng. “Ultra-low power phase change memory with carbon nanotube interconnects.” 2010. Web. 29 Jan 2020.

Vancouver:

Xiong F. Ultra-low power phase change memory with carbon nanotube interconnects. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2010. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/2142/16782.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Xiong F. Ultra-low power phase change memory with carbon nanotube interconnects. [Thesis]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/16782

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

3. Das, Chandasree. Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications.

Degree: 2011, Indian Institute of Science

Chalcogenide glass based Phase Change Memories (PCMs) are being considered recently as promising alternatives to conventional non-volatile Random Access Memories (NVRAMs). PCMs offer high performance… (more)

Subjects/Keywords: Chalcogenide Glasses; Phase Change Memory (PCM); Thin Film Instruments; Chalcogenide Thin Films; Chalcogenide Glasses - Electrical Switching; Chalcogenide Glasses - Optical Properties; Tellurium Chalcogenide Glasses; Chalcogenide Glasses - Thermal Properties; Ge-Te-Bi Glasses; Materials Science

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APA (6th Edition):

Das, C. (2011). Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/2378

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Das, Chandasree. “Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications.” 2011. Thesis, Indian Institute of Science. Accessed January 29, 2020. http://hdl.handle.net/2005/2378.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Das, Chandasree. “Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications.” 2011. Web. 29 Jan 2020.

Vancouver:

Das C. Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications. [Internet] [Thesis]. Indian Institute of Science; 2011. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/2005/2378.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Das C. Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications. [Thesis]. Indian Institute of Science; 2011. Available from: http://hdl.handle.net/2005/2378

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

4. Das, Chandasree. Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications.

Degree: 2011, Indian Institute of Science

Chalcogenide glass based Phase Change Memories (PCMs) are being considered recently as promising alternatives to conventional non-volatile Random Access Memories (NVRAMs). PCMs offer high performance… (more)

Subjects/Keywords: Chalcogenide Glasses; Phase Change Memory (PCM); Thin Film Instruments; Chalcogenide Thin Films; Chalcogenide Glasses - Electrical Switching; Chalcogenide Glasses - Optical Properties; Tellurium Chalcogenide Glasses; Chalcogenide Glasses - Thermal Properties; Ge-Te-Bi Glasses; Materials Science

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Das, C. (2011). Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/handle/2005/2378 ; http://etd.ncsi.iisc.ernet.in/abstracts/3061/G25140-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Das, Chandasree. “Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications.” 2011. Thesis, Indian Institute of Science. Accessed January 29, 2020. http://etd.iisc.ernet.in/handle/2005/2378 ; http://etd.ncsi.iisc.ernet.in/abstracts/3061/G25140-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Das, Chandasree. “Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications.” 2011. Web. 29 Jan 2020.

Vancouver:

Das C. Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications. [Internet] [Thesis]. Indian Institute of Science; 2011. [cited 2020 Jan 29]. Available from: http://etd.iisc.ernet.in/handle/2005/2378 ; http://etd.ncsi.iisc.ernet.in/abstracts/3061/G25140-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Das C. Investigations On Certain Tellurium Based Bulk Chalcogenide Glasses And Amorphous Chalcogenide Films Having Phase Change Memory (PCM) Applications. [Thesis]. Indian Institute of Science; 2011. Available from: http://etd.iisc.ernet.in/handle/2005/2378 ; http://etd.ncsi.iisc.ernet.in/abstracts/3061/G25140-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

5. Anbarasu, M. Electrical Switching And Thermal Studies On Certain Ternary Telluride Glasses With Silicon Additive And Investigations On Their Suitability For Phase Change Memory Applications.

Degree: 2007, Indian Institute of Science

 The Phase Change Memories (PCM) based on chalcogenide glasses are being considered recently as a possible replacement for conventional Non Volatile Random Access Memories (NVRAM).… (more)

Subjects/Keywords: Telluride Glasses - Electrical Properties; Chalcogenide Glasses; Chalcogenide Glasses - Phase Change Memory Applications; Telluride Glasses - Thermal Properties; Glassy Chalcogenides; As-Te-Si Glasses; Ge-Te-Si Glasses; Al-Te-Si Glasses; Phase Change Memory; Raman Scattering; Electrical Switching; SET-RESET Processes; Materials Science

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Anbarasu, M. (2007). Electrical Switching And Thermal Studies On Certain Ternary Telluride Glasses With Silicon Additive And Investigations On Their Suitability For Phase Change Memory Applications. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/617

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Anbarasu, M. “Electrical Switching And Thermal Studies On Certain Ternary Telluride Glasses With Silicon Additive And Investigations On Their Suitability For Phase Change Memory Applications.” 2007. Thesis, Indian Institute of Science. Accessed January 29, 2020. http://hdl.handle.net/2005/617.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Anbarasu, M. “Electrical Switching And Thermal Studies On Certain Ternary Telluride Glasses With Silicon Additive And Investigations On Their Suitability For Phase Change Memory Applications.” 2007. Web. 29 Jan 2020.

Vancouver:

Anbarasu M. Electrical Switching And Thermal Studies On Certain Ternary Telluride Glasses With Silicon Additive And Investigations On Their Suitability For Phase Change Memory Applications. [Internet] [Thesis]. Indian Institute of Science; 2007. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/2005/617.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Anbarasu M. Electrical Switching And Thermal Studies On Certain Ternary Telluride Glasses With Silicon Additive And Investigations On Their Suitability For Phase Change Memory Applications. [Thesis]. Indian Institute of Science; 2007. Available from: http://hdl.handle.net/2005/617

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

6. Sreevidya Varma, G. Mechanical, Structural, Thermal and Electrical Studies on Indium and Silver Doped Ge-Te Glasses having Possible PCM Applications.

Degree: 2014, Indian Institute of Science

 The Science behind amorphous Chalcogenide materials opened up new technologies in the arena of Phase Change Memories. The Ovonic universal phase change memory is called… (more)

Subjects/Keywords: Chalcogenide Glasses; Germanium-Tellurium Glasses; Phase Change Memory; Chalcogenide Phase Change Memory; Indium Germanium-Tellurium Glasses; Silver Germanium-Tellurium Glasses; Amorphous Semiconductors; Ge-Te Indium Glasses; Ge-Te-In Glasses; Ge-Te Glasses; Ge15Te85-xInx Glasses; Ge15Te80-xIn5Agx Glasses; Materials Science

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APA (6th Edition):

Sreevidya Varma, G. (2014). Mechanical, Structural, Thermal and Electrical Studies on Indium and Silver Doped Ge-Te Glasses having Possible PCM Applications. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/3080

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sreevidya Varma, G. “Mechanical, Structural, Thermal and Electrical Studies on Indium and Silver Doped Ge-Te Glasses having Possible PCM Applications.” 2014. Thesis, Indian Institute of Science. Accessed January 29, 2020. http://hdl.handle.net/2005/3080.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sreevidya Varma, G. “Mechanical, Structural, Thermal and Electrical Studies on Indium and Silver Doped Ge-Te Glasses having Possible PCM Applications.” 2014. Web. 29 Jan 2020.

Vancouver:

Sreevidya Varma G. Mechanical, Structural, Thermal and Electrical Studies on Indium and Silver Doped Ge-Te Glasses having Possible PCM Applications. [Internet] [Thesis]. Indian Institute of Science; 2014. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/2005/3080.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sreevidya Varma G. Mechanical, Structural, Thermal and Electrical Studies on Indium and Silver Doped Ge-Te Glasses having Possible PCM Applications. [Thesis]. Indian Institute of Science; 2014. Available from: http://hdl.handle.net/2005/3080

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

7. Vinod, E M. Investigations of Phase Change Memory Properties of Selenium Doped GeTe and Ge2Sb2Te5.

Degree: 2013, Indian Institute of Science

 GeTe and Ge2Sb2Te5 alloys are potential candidates for non-volatile phase change random access memories (PCRAM). For electrical data storage applications the materials should have stable… (more)

Subjects/Keywords: Amorphous Solids; Phase Change Memory Alloys; Germanium-Tellurium Phase Change Memory Alloys; Germanium-Antimony-TelluriumPhase Change Memory Alloys; Amorphous Semiconductors; Selenium Doped GeTe Alloys; Selenium Doped GeSbTe Alloys; Chalcogenide Glasses; GeTe Thin Films; GST (Germanium-Antimony-Tellurium) Films; Phase Change Random Access Memory; Phase Change Memory Materials; Ge2Sb2Te5 Thin Films; Ge-Te Phase Change Memory Alloys; Ge-Sb-Te Phase Change Memory Alloys; Materials Science

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APA (6th Edition):

Vinod, E. M. (2013). Investigations of Phase Change Memory Properties of Selenium Doped GeTe and Ge2Sb2Te5. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/2005/3339 ; http://etd.iisc.ernet.in/abstracts/4204/G25733-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Vinod, E M. “Investigations of Phase Change Memory Properties of Selenium Doped GeTe and Ge2Sb2Te5.” 2013. Thesis, Indian Institute of Science. Accessed January 29, 2020. http://etd.iisc.ernet.in/2005/3339 ; http://etd.iisc.ernet.in/abstracts/4204/G25733-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Vinod, E M. “Investigations of Phase Change Memory Properties of Selenium Doped GeTe and Ge2Sb2Te5.” 2013. Web. 29 Jan 2020.

Vancouver:

Vinod EM. Investigations of Phase Change Memory Properties of Selenium Doped GeTe and Ge2Sb2Te5. [Internet] [Thesis]. Indian Institute of Science; 2013. [cited 2020 Jan 29]. Available from: http://etd.iisc.ernet.in/2005/3339 ; http://etd.iisc.ernet.in/abstracts/4204/G25733-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vinod EM. Investigations of Phase Change Memory Properties of Selenium Doped GeTe and Ge2Sb2Te5. [Thesis]. Indian Institute of Science; 2013. Available from: http://etd.iisc.ernet.in/2005/3339 ; http://etd.iisc.ernet.in/abstracts/4204/G25733-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

8. Aoukar, Manuela. Dépôt de matériaux à changement de phase par PE-MOCVD à injection liquide pulsée pour des applications mémoires PCRAM : Deposition of phase change materials using pulsed-liquid injection PE-MOCVD for PCRAM based memory applications.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Grenoble Alpes

Les mémoires résistives PCRAM sont basées sur le passage rapide et réversible entre un état amorphe hautement résistif et un état cristallin faiblement résistif d’un… (more)

Subjects/Keywords: Mémoire non volatile; PECVD; Matériau à changement de phase; Chalcogénure; XPS; Spectroscopie émission optique; Non volatile memory; PECVD; Phase change materials; Chalcogenide; XPS; Optical emission spectroscopy; 620

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APA (6th Edition):

Aoukar, M. (2015). Dépôt de matériaux à changement de phase par PE-MOCVD à injection liquide pulsée pour des applications mémoires PCRAM : Deposition of phase change materials using pulsed-liquid injection PE-MOCVD for PCRAM based memory applications. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAT075

Chicago Manual of Style (16th Edition):

Aoukar, Manuela. “Dépôt de matériaux à changement de phase par PE-MOCVD à injection liquide pulsée pour des applications mémoires PCRAM : Deposition of phase change materials using pulsed-liquid injection PE-MOCVD for PCRAM based memory applications.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed January 29, 2020. http://www.theses.fr/2015GREAT075.

MLA Handbook (7th Edition):

Aoukar, Manuela. “Dépôt de matériaux à changement de phase par PE-MOCVD à injection liquide pulsée pour des applications mémoires PCRAM : Deposition of phase change materials using pulsed-liquid injection PE-MOCVD for PCRAM based memory applications.” 2015. Web. 29 Jan 2020.

Vancouver:

Aoukar M. Dépôt de matériaux à changement de phase par PE-MOCVD à injection liquide pulsée pour des applications mémoires PCRAM : Deposition of phase change materials using pulsed-liquid injection PE-MOCVD for PCRAM based memory applications. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2020 Jan 29]. Available from: http://www.theses.fr/2015GREAT075.

Council of Science Editors:

Aoukar M. Dépôt de matériaux à changement de phase par PE-MOCVD à injection liquide pulsée pour des applications mémoires PCRAM : Deposition of phase change materials using pulsed-liquid injection PE-MOCVD for PCRAM based memory applications. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAT075

9. WEI XIAOQIAN. Investigation of the scalability limitations of phase change random access memory.

Degree: 2008, National University of Singapore

Subjects/Keywords: Semiconductor memory; phase change random access memory; chalcogenide material; scalability limitations; integrated circuit

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APA (6th Edition):

XIAOQIAN, W. (2008). Investigation of the scalability limitations of phase change random access memory. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/16718

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

XIAOQIAN, WEI. “Investigation of the scalability limitations of phase change random access memory.” 2008. Thesis, National University of Singapore. Accessed January 29, 2020. http://scholarbank.nus.edu.sg/handle/10635/16718.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

XIAOQIAN, WEI. “Investigation of the scalability limitations of phase change random access memory.” 2008. Web. 29 Jan 2020.

Vancouver:

XIAOQIAN W. Investigation of the scalability limitations of phase change random access memory. [Internet] [Thesis]. National University of Singapore; 2008. [cited 2020 Jan 29]. Available from: http://scholarbank.nus.edu.sg/handle/10635/16718.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

XIAOQIAN W. Investigation of the scalability limitations of phase change random access memory. [Thesis]. National University of Singapore; 2008. Available from: http://scholarbank.nus.edu.sg/handle/10635/16718

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Debrecen

10. Yusuf Bilal, Karatas. Optical Memory Element on the Basis of Amorphous Chalcogenide Film .

Degree: DE – TEK – Természettudományi és Technológiai Kar – Fizikai Intézet, 2013, University of Debrecen

 I obtainedintroductory knowledge of the optical recording and optical memory during the investigation as part of my thesis. The photosensitive media were analyzed and the… (more)

Subjects/Keywords: Memory; Chalcogenide

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APA (6th Edition):

Yusuf Bilal, K. (2013). Optical Memory Element on the Basis of Amorphous Chalcogenide Film . (Thesis). University of Debrecen. Retrieved from http://hdl.handle.net/2437/168878

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yusuf Bilal, Karatas. “Optical Memory Element on the Basis of Amorphous Chalcogenide Film .” 2013. Thesis, University of Debrecen. Accessed January 29, 2020. http://hdl.handle.net/2437/168878.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yusuf Bilal, Karatas. “Optical Memory Element on the Basis of Amorphous Chalcogenide Film .” 2013. Web. 29 Jan 2020.

Vancouver:

Yusuf Bilal K. Optical Memory Element on the Basis of Amorphous Chalcogenide Film . [Internet] [Thesis]. University of Debrecen; 2013. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/2437/168878.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yusuf Bilal K. Optical Memory Element on the Basis of Amorphous Chalcogenide Film . [Thesis]. University of Debrecen; 2013. Available from: http://hdl.handle.net/2437/168878

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

11. Jung, Hyunsung. Synthesis and Characterization of 1-, 2- and 3-Dimensional Chalcogenide Nanostructures.

Degree: Chemical and Environmental Engineering, 2011, University of California – Riverside

 The paramount issues of today such as the gathering energy crisis and rise in levels of pollution have largely resulted from our increasingly accelerated industrialization… (more)

Subjects/Keywords: Engineering; Materials Science; Energy; Chalcogenide; Nanostructure; Phase change memory; Thermoelectric

…CONTENTS CHAPTER 1: INTRODUCTION: NANOSTRUCTURED THERMOELECTRIC AND PHASE CHANGE MEMORY DEVICES… …Nanostructured Phase Change Memory. …............................... 19 1.2.1 An Overview of… …Phase Change Memory. . …. 19 1.2.2 Phase Transition Materials… …26 1.2.3 Improved Performance of Nanostructured Phase Change Memory. ….. 28 1.3 Research… …diagrams of various phase change memory devices with optimized designs: a lateral offset Ovonic… 

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APA (6th Edition):

Jung, H. (2011). Synthesis and Characterization of 1-, 2- and 3-Dimensional Chalcogenide Nanostructures. (Thesis). University of California – Riverside. Retrieved from http://www.escholarship.org/uc/item/7xq177wv

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jung, Hyunsung. “Synthesis and Characterization of 1-, 2- and 3-Dimensional Chalcogenide Nanostructures.” 2011. Thesis, University of California – Riverside. Accessed January 29, 2020. http://www.escholarship.org/uc/item/7xq177wv.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jung, Hyunsung. “Synthesis and Characterization of 1-, 2- and 3-Dimensional Chalcogenide Nanostructures.” 2011. Web. 29 Jan 2020.

Vancouver:

Jung H. Synthesis and Characterization of 1-, 2- and 3-Dimensional Chalcogenide Nanostructures. [Internet] [Thesis]. University of California – Riverside; 2011. [cited 2020 Jan 29]. Available from: http://www.escholarship.org/uc/item/7xq177wv.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jung H. Synthesis and Characterization of 1-, 2- and 3-Dimensional Chalcogenide Nanostructures. [Thesis]. University of California – Riverside; 2011. Available from: http://www.escholarship.org/uc/item/7xq177wv

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Cincinnati

12. Gunasekera, Kapila J. Intermediate Phase, Molecular Structure, Aging and Network Topology of Ternary GexSbxSe100-2x Glasses.

Degree: MS, Engineering : Electrical Engineering, 2010, University of Cincinnati

  Bulk alloy glasses of GexSbxSe100-2x composition were synthesized over the compositional range, 0% < x < 23%, and examined in modulated differential scanning calorimetric,… (more)

Subjects/Keywords: Materials Science; Intermediate Phase; Phase Change Materials; Chalcogenide glasses; Aging; Network Topology; Ge2Sb2Te5

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APA (6th Edition):

Gunasekera, K. J. (2010). Intermediate Phase, Molecular Structure, Aging and Network Topology of Ternary GexSbxSe100-2x Glasses. (Masters Thesis). University of Cincinnati. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=ucin1277132558

Chicago Manual of Style (16th Edition):

Gunasekera, Kapila J. “Intermediate Phase, Molecular Structure, Aging and Network Topology of Ternary GexSbxSe100-2x Glasses.” 2010. Masters Thesis, University of Cincinnati. Accessed January 29, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1277132558.

MLA Handbook (7th Edition):

Gunasekera, Kapila J. “Intermediate Phase, Molecular Structure, Aging and Network Topology of Ternary GexSbxSe100-2x Glasses.” 2010. Web. 29 Jan 2020.

Vancouver:

Gunasekera KJ. Intermediate Phase, Molecular Structure, Aging and Network Topology of Ternary GexSbxSe100-2x Glasses. [Internet] [Masters thesis]. University of Cincinnati; 2010. [cited 2020 Jan 29]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1277132558.

Council of Science Editors:

Gunasekera KJ. Intermediate Phase, Molecular Structure, Aging and Network Topology of Ternary GexSbxSe100-2x Glasses. [Masters Thesis]. University of Cincinnati; 2010. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=ucin1277132558


Indian Institute of Science

13. Lakshmi, K P. Studies on Si15Te85-xGex and Ge15Te85-xAgx Amorphous Thin Films for Possible Applications in Phase Change Memories.

Degree: 2013, Indian Institute of Science

Chalcogenide glasses are a class of covalent amorphous semiconductors with interesting properties. The presence of short-range order and the pinned Fermi level are the two… (more)

Subjects/Keywords: Phase Change Memory (PCM); Amorphous Thin Films; Chalcogenide Glasses; Chalcogenide Glasses - Electrical Switching; Amorphous Thin Films - Optical Band Gap; Anorphous Thin Films - Electrical Switching; Amorphous Chalcogenide Thin Films; Silicon Telluride Germanium Amorphous Thin Films; Germanium Telluride Silver Amorphous Thin Films; Si–Te–Ge Thin Films; Si15Te75Ge10 Thin Films; Si15Te85-xGex Thin Films; Ge-Te-Ag Thin Films; Electronic Engineering

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APA (6th Edition):

Lakshmi, K. P. (2013). Studies on Si15Te85-xGex and Ge15Te85-xAgx Amorphous Thin Films for Possible Applications in Phase Change Memories. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/2005/3359 ; http://etd.iisc.ernet.in/abstracts/4227/G25760-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lakshmi, K P. “Studies on Si15Te85-xGex and Ge15Te85-xAgx Amorphous Thin Films for Possible Applications in Phase Change Memories.” 2013. Thesis, Indian Institute of Science. Accessed January 29, 2020. http://etd.iisc.ernet.in/2005/3359 ; http://etd.iisc.ernet.in/abstracts/4227/G25760-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lakshmi, K P. “Studies on Si15Te85-xGex and Ge15Te85-xAgx Amorphous Thin Films for Possible Applications in Phase Change Memories.” 2013. Web. 29 Jan 2020.

Vancouver:

Lakshmi KP. Studies on Si15Te85-xGex and Ge15Te85-xAgx Amorphous Thin Films for Possible Applications in Phase Change Memories. [Internet] [Thesis]. Indian Institute of Science; 2013. [cited 2020 Jan 29]. Available from: http://etd.iisc.ernet.in/2005/3359 ; http://etd.iisc.ernet.in/abstracts/4227/G25760-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lakshmi KP. Studies on Si15Te85-xGex and Ge15Te85-xAgx Amorphous Thin Films for Possible Applications in Phase Change Memories. [Thesis]. Indian Institute of Science; 2013. Available from: http://etd.iisc.ernet.in/2005/3359 ; http://etd.iisc.ernet.in/abstracts/4227/G25760-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

14. Carria, Egidio. Amorphous-Crystal Phase Transitions in Ge2Sb2Te5 and GexTe1-x alloys.

Degree: 2012, Università degli Studi di Catania

 Aim of this work was the investigation of the phase transitions in Ge2Sb2Te5 and GexTe1-x thin films. These alloys are of interest since they exhibit… (more)

Subjects/Keywords: Area 02 - Scienze fisiche; Chalcogenide, Crystallization, GST, GeTe, ion irradiation, Raman, EXAFS, phase-change

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APA (6th Edition):

Carria, E. (2012). Amorphous-Crystal Phase Transitions in Ge2Sb2Te5 and GexTe1-x alloys. (Thesis). Università degli Studi di Catania. Retrieved from http://hdl.handle.net/10761/933

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Carria, Egidio. “Amorphous-Crystal Phase Transitions in Ge2Sb2Te5 and GexTe1-x alloys.” 2012. Thesis, Università degli Studi di Catania. Accessed January 29, 2020. http://hdl.handle.net/10761/933.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Carria, Egidio. “Amorphous-Crystal Phase Transitions in Ge2Sb2Te5 and GexTe1-x alloys.” 2012. Web. 29 Jan 2020.

Vancouver:

Carria E. Amorphous-Crystal Phase Transitions in Ge2Sb2Te5 and GexTe1-x alloys. [Internet] [Thesis]. Università degli Studi di Catania; 2012. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/10761/933.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Carria E. Amorphous-Crystal Phase Transitions in Ge2Sb2Te5 and GexTe1-x alloys. [Thesis]. Università degli Studi di Catania; 2012. Available from: http://hdl.handle.net/10761/933

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Boise State University

15. Balasubramanian, Mahesh. Phase Change Memory: Array Development and Sensing Circuits Using Delta-Sigma Modulation.

Degree: 2009, Boise State University

Chalcogenide based non-volatile Phase Change Memory (PCM) circuits were designed to investigate new emerging non-volatile memory technologies. An overview of the operation of chalcogenide-based resistive… (more)

Subjects/Keywords: phase change memory; chalcogenide; non volatile memory circuits; Delta Sigma Modulation based sensing circuits; VLSI and Circuits, Embedded and Hardware Systems

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APA (6th Edition):

Balasubramanian, M. (2009). Phase Change Memory: Array Development and Sensing Circuits Using Delta-Sigma Modulation. (Thesis). Boise State University. Retrieved from https://scholarworks.boisestate.edu/td/44

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Balasubramanian, Mahesh. “Phase Change Memory: Array Development and Sensing Circuits Using Delta-Sigma Modulation.” 2009. Thesis, Boise State University. Accessed January 29, 2020. https://scholarworks.boisestate.edu/td/44.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Balasubramanian, Mahesh. “Phase Change Memory: Array Development and Sensing Circuits Using Delta-Sigma Modulation.” 2009. Web. 29 Jan 2020.

Vancouver:

Balasubramanian M. Phase Change Memory: Array Development and Sensing Circuits Using Delta-Sigma Modulation. [Internet] [Thesis]. Boise State University; 2009. [cited 2020 Jan 29]. Available from: https://scholarworks.boisestate.edu/td/44.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Balasubramanian M. Phase Change Memory: Array Development and Sensing Circuits Using Delta-Sigma Modulation. [Thesis]. Boise State University; 2009. Available from: https://scholarworks.boisestate.edu/td/44

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

16. Yeo, Eng Guan. Transient Phase-Change Effect in Phase-Change Memory Devices.

Degree: MS, Electrical and Computer Engineering, 2009, University of Illinois – Urbana-Champaign

Phase-change random access memory (PCRAM) is one of the next-generation memories with the most potential due to its many good characteristics, such as nonvolatility, high… (more)

Subjects/Keywords: phase-change; transient effect; Phase-change random access memory (PCRAM)

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APA (6th Edition):

Yeo, E. G. (2009). Transient Phase-Change Effect in Phase-Change Memory Devices. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/11983

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yeo, Eng Guan. “Transient Phase-Change Effect in Phase-Change Memory Devices.” 2009. Thesis, University of Illinois – Urbana-Champaign. Accessed January 29, 2020. http://hdl.handle.net/2142/11983.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yeo, Eng Guan. “Transient Phase-Change Effect in Phase-Change Memory Devices.” 2009. Web. 29 Jan 2020.

Vancouver:

Yeo EG. Transient Phase-Change Effect in Phase-Change Memory Devices. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2009. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/2142/11983.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yeo EG. Transient Phase-Change Effect in Phase-Change Memory Devices. [Thesis]. University of Illinois – Urbana-Champaign; 2009. Available from: http://hdl.handle.net/2142/11983

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

17. Barclay, Martin Jared. A Reliability Prediction Method for Phase-Change Devices Using Optimized Pulse Conditions.

Degree: 2014, Boise State University

 Owing to the outstanding device characteristics of Phase-Change Random Access Memory (PCRAM) such as high scalability, high speed, good cycling endurance, and compatibility with conventional… (more)

Subjects/Keywords: Reliability; Phase-Change Memory; Chalcogenide; PCRAM; PCM; GST; Electronic Devices and Semiconductor Manufacturing

…1.2 Phase-Change Random Access Memory (PCRAM) Chalcogenide-based PCRAM is one of… …1 1.2 Phase-Change Random Access Memory (PCRAM)… …Failure NVM Non-Volatile Memory PCRAM Phase-Change Random Access Memory PDF Probability… …x5D;, and Phase Change RandomAccess Memory (PCRAM) [13], [14]… …change in the phase of the chalcogenide glass material, was first published in 1968 by Stanford… 

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APA (6th Edition):

Barclay, M. J. (2014). A Reliability Prediction Method for Phase-Change Devices Using Optimized Pulse Conditions. (Thesis). Boise State University. Retrieved from https://scholarworks.boisestate.edu/td/847

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Barclay, Martin Jared. “A Reliability Prediction Method for Phase-Change Devices Using Optimized Pulse Conditions.” 2014. Thesis, Boise State University. Accessed January 29, 2020. https://scholarworks.boisestate.edu/td/847.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Barclay, Martin Jared. “A Reliability Prediction Method for Phase-Change Devices Using Optimized Pulse Conditions.” 2014. Web. 29 Jan 2020.

Vancouver:

Barclay MJ. A Reliability Prediction Method for Phase-Change Devices Using Optimized Pulse Conditions. [Internet] [Thesis]. Boise State University; 2014. [cited 2020 Jan 29]. Available from: https://scholarworks.boisestate.edu/td/847.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Barclay MJ. A Reliability Prediction Method for Phase-Change Devices Using Optimized Pulse Conditions. [Thesis]. Boise State University; 2014. Available from: https://scholarworks.boisestate.edu/td/847

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

18. FANG WEIWEI LINA. Phase change memory engineering and integration with CMOS technology.

Degree: 2011, National University of Singapore

Subjects/Keywords: phase change memory

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APA (6th Edition):

LINA, F. W. (2011). Phase change memory engineering and integration with CMOS technology. (Thesis). National University of Singapore. Retrieved from http://scholarbank.nus.edu.sg/handle/10635/29966

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

LINA, FANG WEIWEI. “Phase change memory engineering and integration with CMOS technology.” 2011. Thesis, National University of Singapore. Accessed January 29, 2020. http://scholarbank.nus.edu.sg/handle/10635/29966.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

LINA, FANG WEIWEI. “Phase change memory engineering and integration with CMOS technology.” 2011. Web. 29 Jan 2020.

Vancouver:

LINA FW. Phase change memory engineering and integration with CMOS technology. [Internet] [Thesis]. National University of Singapore; 2011. [cited 2020 Jan 29]. Available from: http://scholarbank.nus.edu.sg/handle/10635/29966.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

LINA FW. Phase change memory engineering and integration with CMOS technology. [Thesis]. National University of Singapore; 2011. Available from: http://scholarbank.nus.edu.sg/handle/10635/29966

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New South Wales

19. Emami Khansari, Sayedeh. Processing and characterization of Ge2Sb2Te5 and Sb2Te-based phase change memory films.

Degree: Materials Science & Engineering, 2017, University of New South Wales

 The global use of portable electronic devices demands new non-volatile memories (NVM) with faster operation speed, better performance and higher capacity. One of the promising… (more)

Subjects/Keywords: Ge2Sb2Te5; Phase change memory films; Sb2Te; Doping

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APA (6th Edition):

Emami Khansari, S. (2017). Processing and characterization of Ge2Sb2Te5 and Sb2Te-based phase change memory films. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/60160 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:51461/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Emami Khansari, Sayedeh. “Processing and characterization of Ge2Sb2Te5 and Sb2Te-based phase change memory films.” 2017. Doctoral Dissertation, University of New South Wales. Accessed January 29, 2020. http://handle.unsw.edu.au/1959.4/60160 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:51461/SOURCE02?view=true.

MLA Handbook (7th Edition):

Emami Khansari, Sayedeh. “Processing and characterization of Ge2Sb2Te5 and Sb2Te-based phase change memory films.” 2017. Web. 29 Jan 2020.

Vancouver:

Emami Khansari S. Processing and characterization of Ge2Sb2Te5 and Sb2Te-based phase change memory films. [Internet] [Doctoral dissertation]. University of New South Wales; 2017. [cited 2020 Jan 29]. Available from: http://handle.unsw.edu.au/1959.4/60160 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:51461/SOURCE02?view=true.

Council of Science Editors:

Emami Khansari S. Processing and characterization of Ge2Sb2Te5 and Sb2Te-based phase change memory films. [Doctoral Dissertation]. University of New South Wales; 2017. Available from: http://handle.unsw.edu.au/1959.4/60160 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:51461/SOURCE02?view=true


University of Illinois – Urbana-Champaign

20. Yeo, Eng Guan. Transient phase change effect in phase change memory devices.

Degree: PhD, 1200, 2011, University of Illinois – Urbana-Champaign

Phase change random access memory (PCRAM) is a leading contender for next generation nonvolatile memory. The phase change mechanism from high resistance amorphous phase to… (more)

Subjects/Keywords: phase change memory; Phase change random access memory (PCRAM); transient effect; time-resolved; filament

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APA (6th Edition):

Yeo, E. G. (2011). Transient phase change effect in phase change memory devices. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18640

Chicago Manual of Style (16th Edition):

Yeo, Eng Guan. “Transient phase change effect in phase change memory devices.” 2011. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed January 29, 2020. http://hdl.handle.net/2142/18640.

MLA Handbook (7th Edition):

Yeo, Eng Guan. “Transient phase change effect in phase change memory devices.” 2011. Web. 29 Jan 2020.

Vancouver:

Yeo EG. Transient phase change effect in phase change memory devices. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2011. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/2142/18640.

Council of Science Editors:

Yeo EG. Transient phase change effect in phase change memory devices. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18640

21. Cabrera, David. Material Engineering for Phase Change Memory.

Degree: MS, Electrical Engineering, 2014, Rochester Institute of Technology

  As semiconductor devices continue to scale downward, and portable consumer electronics become more prevalent there is a need to develop memory technology that will… (more)

Subjects/Keywords: Chalcogenide; Dopants; Drift; Phase change; Threshold field

…7 Figure 1.8 Phase change memory structure… …10 Figure 2.2 I-V characteristics of a phase change memory device showing switching between… …11 Figure 2.3 Phase change memory pulse time vs. temperature to reach different states… …13 Figure 2.5 Potential of phase change memory compared to industry standard, adapted from… …RAM PCM Phase Change Memory SD Secure Digital ITRS International Technology Roadmap… 

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APA (6th Edition):

Cabrera, D. (2014). Material Engineering for Phase Change Memory. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/7939

Chicago Manual of Style (16th Edition):

Cabrera, David. “Material Engineering for Phase Change Memory.” 2014. Masters Thesis, Rochester Institute of Technology. Accessed January 29, 2020. https://scholarworks.rit.edu/theses/7939.

MLA Handbook (7th Edition):

Cabrera, David. “Material Engineering for Phase Change Memory.” 2014. Web. 29 Jan 2020.

Vancouver:

Cabrera D. Material Engineering for Phase Change Memory. [Internet] [Masters thesis]. Rochester Institute of Technology; 2014. [cited 2020 Jan 29]. Available from: https://scholarworks.rit.edu/theses/7939.

Council of Science Editors:

Cabrera D. Material Engineering for Phase Change Memory. [Masters Thesis]. Rochester Institute of Technology; 2014. Available from: https://scholarworks.rit.edu/theses/7939


University of Illinois – Urbana-Champaign

22. Xiong, Feng. Scaling study of phase change memory using carbon nanotube electrodes.

Degree: PhD, 1200, 2014, University of Illinois – Urbana-Champaign

 Demands for data storage and computer memory are growing exponentially. It is thus essential to find a new scalable, energy-efficient memory technology. We have been… (more)

Subjects/Keywords: Phase change material (PCM); Phase Change Memory; Carbon Nanotube (CNT); Finite Element Model; Resistive Memory; Resistive random access memory (RRAM); Crossbar

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APA (6th Edition):

Xiong, F. (2014). Scaling study of phase change memory using carbon nanotube electrodes. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/49709

Chicago Manual of Style (16th Edition):

Xiong, Feng. “Scaling study of phase change memory using carbon nanotube electrodes.” 2014. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed January 29, 2020. http://hdl.handle.net/2142/49709.

MLA Handbook (7th Edition):

Xiong, Feng. “Scaling study of phase change memory using carbon nanotube electrodes.” 2014. Web. 29 Jan 2020.

Vancouver:

Xiong F. Scaling study of phase change memory using carbon nanotube electrodes. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2014. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/2142/49709.

Council of Science Editors:

Xiong F. Scaling study of phase change memory using carbon nanotube electrodes. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/49709


Rice University

23. Giles, Ellis Robinson. WrAP: Hardware and Software Support for Atomic Persistence in Storage Class Memory.

Degree: MS, Engineering, 2015, Rice University

 In-memory computing is gaining popularity as a means of sidestepping the performance bottlenecks of traditional block-based storage devices. However, the volatile nature of DRAM makes… (more)

Subjects/Keywords: SCM; Atomicity; Persistence; Storage Class Memory; Phase Change Memory; PCM

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APA (6th Edition):

Giles, E. R. (2015). WrAP: Hardware and Software Support for Atomic Persistence in Storage Class Memory. (Masters Thesis). Rice University. Retrieved from http://hdl.handle.net/1911/87822

Chicago Manual of Style (16th Edition):

Giles, Ellis Robinson. “WrAP: Hardware and Software Support for Atomic Persistence in Storage Class Memory.” 2015. Masters Thesis, Rice University. Accessed January 29, 2020. http://hdl.handle.net/1911/87822.

MLA Handbook (7th Edition):

Giles, Ellis Robinson. “WrAP: Hardware and Software Support for Atomic Persistence in Storage Class Memory.” 2015. Web. 29 Jan 2020.

Vancouver:

Giles ER. WrAP: Hardware and Software Support for Atomic Persistence in Storage Class Memory. [Internet] [Masters thesis]. Rice University; 2015. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/1911/87822.

Council of Science Editors:

Giles ER. WrAP: Hardware and Software Support for Atomic Persistence in Storage Class Memory. [Masters Thesis]. Rice University; 2015. Available from: http://hdl.handle.net/1911/87822


Indian Institute of Science

24. Manikandan, N. Investigations On Topological Thresholds In Metal Doped Ternary Telluride Glasses.

Degree: 2007, Indian Institute of Science

 The ability to tune the properties over a wide range of values by changing the additives, composition, etc., has made chalcogenide glassy semiconductors, most interesting… (more)

Subjects/Keywords: Chalcogenide Glasses - Instrumentation; Telluride Glasses - Instrumentation; Amorphous Semiconductors; Chalcogenide Glasses - Properties; Network Topological Thresholds; Rigidity Percolation Threshold (RPT); Chemical Threshold (CT); Altrnating Differential Scanning Calorimetry (ADSC); Chalcogenide Glassy Semiconductors; Phase Change Memories (PCM); Differential Scanning Calorimetry (DSC); Instrumentation

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APA (6th Edition):

Manikandan, N. (2007). Investigations On Topological Thresholds In Metal Doped Ternary Telluride Glasses. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/528

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Manikandan, N. “Investigations On Topological Thresholds In Metal Doped Ternary Telluride Glasses.” 2007. Thesis, Indian Institute of Science. Accessed January 29, 2020. http://hdl.handle.net/2005/528.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Manikandan, N. “Investigations On Topological Thresholds In Metal Doped Ternary Telluride Glasses.” 2007. Web. 29 Jan 2020.

Vancouver:

Manikandan N. Investigations On Topological Thresholds In Metal Doped Ternary Telluride Glasses. [Internet] [Thesis]. Indian Institute of Science; 2007. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/2005/528.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Manikandan N. Investigations On Topological Thresholds In Metal Doped Ternary Telluride Glasses. [Thesis]. Indian Institute of Science; 2007. Available from: http://hdl.handle.net/2005/528

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

25. Chi, Ping. Facilitating Emerging Non-volatile Memories in Next-Generation Memory System Design: Architecture-Level and Application-Level Perspectives.

Degree: 2016, University of California – eScholarship, University of California

 This dissertation focuses on three types of emerging NVMs, spin-transfer torque RAM (STT-RAM), phase change memory (PCM), and metal-oxide resistive RAM (ReRAM). STT-RAM has been… (more)

Subjects/Keywords: Computer engineering; memory system design; non-volatile memory; phase change memory; ReRAM; STT-RAM

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APA (6th Edition):

Chi, P. (2016). Facilitating Emerging Non-volatile Memories in Next-Generation Memory System Design: Architecture-Level and Application-Level Perspectives. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/2g6962cg

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chi, Ping. “Facilitating Emerging Non-volatile Memories in Next-Generation Memory System Design: Architecture-Level and Application-Level Perspectives.” 2016. Thesis, University of California – eScholarship, University of California. Accessed January 29, 2020. http://www.escholarship.org/uc/item/2g6962cg.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chi, Ping. “Facilitating Emerging Non-volatile Memories in Next-Generation Memory System Design: Architecture-Level and Application-Level Perspectives.” 2016. Web. 29 Jan 2020.

Vancouver:

Chi P. Facilitating Emerging Non-volatile Memories in Next-Generation Memory System Design: Architecture-Level and Application-Level Perspectives. [Internet] [Thesis]. University of California – eScholarship, University of California; 2016. [cited 2020 Jan 29]. Available from: http://www.escholarship.org/uc/item/2g6962cg.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chi P. Facilitating Emerging Non-volatile Memories in Next-Generation Memory System Design: Architecture-Level and Application-Level Perspectives. [Thesis]. University of California – eScholarship, University of California; 2016. Available from: http://www.escholarship.org/uc/item/2g6962cg

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Oxford

26. Shanmugam, Janaki. Correlation of optical anisotropy with structural changes in Ge2Sb2Te5.

Degree: PhD, 2018, University of Oxford

 Ge2Sb2Te5 (GST) is an established phase-change material that undergoes fast reversible transitions between amorphous and crystalline states with a high electro-optical contrast, enabling applications in… (more)

Subjects/Keywords: Semiconductors; Materials; Athermal amorphous-to-crystalline phase transition; Chalcogenide; Optically-induced chirality; Circular dichroism spectroscopy; Phase change material; Reduced density function (RDF) analysis

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Shanmugam, J. (2018). Correlation of optical anisotropy with structural changes in Ge2Sb2Te5. (Doctoral Dissertation). University of Oxford. Retrieved from http://ora.ox.ac.uk/objects/uuid:8cee7355-0ff6-4939-a606-a406c7a9823d ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.748983

Chicago Manual of Style (16th Edition):

Shanmugam, Janaki. “Correlation of optical anisotropy with structural changes in Ge2Sb2Te5.” 2018. Doctoral Dissertation, University of Oxford. Accessed January 29, 2020. http://ora.ox.ac.uk/objects/uuid:8cee7355-0ff6-4939-a606-a406c7a9823d ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.748983.

MLA Handbook (7th Edition):

Shanmugam, Janaki. “Correlation of optical anisotropy with structural changes in Ge2Sb2Te5.” 2018. Web. 29 Jan 2020.

Vancouver:

Shanmugam J. Correlation of optical anisotropy with structural changes in Ge2Sb2Te5. [Internet] [Doctoral dissertation]. University of Oxford; 2018. [cited 2020 Jan 29]. Available from: http://ora.ox.ac.uk/objects/uuid:8cee7355-0ff6-4939-a606-a406c7a9823d ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.748983.

Council of Science Editors:

Shanmugam J. Correlation of optical anisotropy with structural changes in Ge2Sb2Te5. [Doctoral Dissertation]. University of Oxford; 2018. Available from: http://ora.ox.ac.uk/objects/uuid:8cee7355-0ff6-4939-a606-a406c7a9823d ; https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.748983


Texas A&M University

27. Li, Yue. Algorithms and Data Representations for Emerging Non-Volatile Memories.

Degree: 2014, Texas A&M University

 The evolution of data storage technologies has been extraordinary. Hard disk drives that fit in current personal computers have the capacity that requires tons of… (more)

Subjects/Keywords: Nonvolatile memory; flash memory; phase-change memory; coding theory; error correcting code; write-once memory; reliability; endurance; rank modulation code; scrubbing

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Li, Y. (2014). Algorithms and Data Representations for Emerging Non-Volatile Memories. (Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/152646

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Yue. “Algorithms and Data Representations for Emerging Non-Volatile Memories.” 2014. Thesis, Texas A&M University. Accessed January 29, 2020. http://hdl.handle.net/1969.1/152646.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Yue. “Algorithms and Data Representations for Emerging Non-Volatile Memories.” 2014. Web. 29 Jan 2020.

Vancouver:

Li Y. Algorithms and Data Representations for Emerging Non-Volatile Memories. [Internet] [Thesis]. Texas A&M University; 2014. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/1969.1/152646.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li Y. Algorithms and Data Representations for Emerging Non-Volatile Memories. [Thesis]. Texas A&M University; 2014. Available from: http://hdl.handle.net/1969.1/152646

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Exeter

28. Vázquez Diosdado, Jorge Alberto. A cellular automata approach for the simulation and development of advanced phase change memory devices.

Degree: PhD, 2012, University of Exeter

Phase change devices in both optical and electrical formats have been subject of intense research since their discovery by Ovshinsky in the early 1960’s. They… (more)

Subjects/Keywords: 004.568; Cellular Automata, Phase Change Materials, Advanced Memory Devices

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Vázquez Diosdado, J. A. (2012). A cellular automata approach for the simulation and development of advanced phase change memory devices. (Doctoral Dissertation). University of Exeter. Retrieved from http://hdl.handle.net/10036/4141

Chicago Manual of Style (16th Edition):

Vázquez Diosdado, Jorge Alberto. “A cellular automata approach for the simulation and development of advanced phase change memory devices.” 2012. Doctoral Dissertation, University of Exeter. Accessed January 29, 2020. http://hdl.handle.net/10036/4141.

MLA Handbook (7th Edition):

Vázquez Diosdado, Jorge Alberto. “A cellular automata approach for the simulation and development of advanced phase change memory devices.” 2012. Web. 29 Jan 2020.

Vancouver:

Vázquez Diosdado JA. A cellular automata approach for the simulation and development of advanced phase change memory devices. [Internet] [Doctoral dissertation]. University of Exeter; 2012. [cited 2020 Jan 29]. Available from: http://hdl.handle.net/10036/4141.

Council of Science Editors:

Vázquez Diosdado JA. A cellular automata approach for the simulation and development of advanced phase change memory devices. [Doctoral Dissertation]. University of Exeter; 2012. Available from: http://hdl.handle.net/10036/4141


Hong Kong University of Science and Technology

29. Chen, Yihan. Modeling interface engineered phase-change memory cell.

Degree: 2016, Hong Kong University of Science and Technology

 Due to its outstanding scalability, phase change memory is regarded as a promising memory technology to enhance non-volatile storage in ultra-small feature size. However high… (more)

Subjects/Keywords: Phase change memory ; Low voltage integrated circuits ; Design and construction

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, Y. (2016). Modeling interface engineered phase-change memory cell. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-86948 ; https://doi.org/10.14711/thesis-b1628121 ; http://repository.ust.hk/ir/bitstream/1783.1-86948/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Yihan. “Modeling interface engineered phase-change memory cell.” 2016. Thesis, Hong Kong University of Science and Technology. Accessed January 29, 2020. http://repository.ust.hk/ir/Record/1783.1-86948 ; https://doi.org/10.14711/thesis-b1628121 ; http://repository.ust.hk/ir/bitstream/1783.1-86948/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Yihan. “Modeling interface engineered phase-change memory cell.” 2016. Web. 29 Jan 2020.

Vancouver:

Chen Y. Modeling interface engineered phase-change memory cell. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2016. [cited 2020 Jan 29]. Available from: http://repository.ust.hk/ir/Record/1783.1-86948 ; https://doi.org/10.14711/thesis-b1628121 ; http://repository.ust.hk/ir/bitstream/1783.1-86948/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Modeling interface engineered phase-change memory cell. [Thesis]. Hong Kong University of Science and Technology; 2016. Available from: http://repository.ust.hk/ir/Record/1783.1-86948 ; https://doi.org/10.14711/thesis-b1628121 ; http://repository.ust.hk/ir/bitstream/1783.1-86948/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

30. Wang, Panni ECE. Phase change memory cell with CMOS compatible vertically aligned carbon nanotube electrode.

Degree: 2017, Hong Kong University of Science and Technology

Phase change memory (PCM) is a promising resistive non-volatile memory for its fast writing and reading speed, highly scalable properties, and long endurance. PCM formed… (more)

Subjects/Keywords: Phase change memory ; Flash memories (Computers) ; Carbon nanotubes

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, P. E. (2017). Phase change memory cell with CMOS compatible vertically aligned carbon nanotube electrode. (Thesis). Hong Kong University of Science and Technology. Retrieved from http://repository.ust.hk/ir/Record/1783.1-91050 ; https://doi.org/10.14711/thesis-991012554767403412 ; http://repository.ust.hk/ir/bitstream/1783.1-91050/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Panni ECE. “Phase change memory cell with CMOS compatible vertically aligned carbon nanotube electrode.” 2017. Thesis, Hong Kong University of Science and Technology. Accessed January 29, 2020. http://repository.ust.hk/ir/Record/1783.1-91050 ; https://doi.org/10.14711/thesis-991012554767403412 ; http://repository.ust.hk/ir/bitstream/1783.1-91050/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Panni ECE. “Phase change memory cell with CMOS compatible vertically aligned carbon nanotube electrode.” 2017. Web. 29 Jan 2020.

Vancouver:

Wang PE. Phase change memory cell with CMOS compatible vertically aligned carbon nanotube electrode. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2017. [cited 2020 Jan 29]. Available from: http://repository.ust.hk/ir/Record/1783.1-91050 ; https://doi.org/10.14711/thesis-991012554767403412 ; http://repository.ust.hk/ir/bitstream/1783.1-91050/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang PE. Phase change memory cell with CMOS compatible vertically aligned carbon nanotube electrode. [Thesis]. Hong Kong University of Science and Technology; 2017. Available from: http://repository.ust.hk/ir/Record/1783.1-91050 ; https://doi.org/10.14711/thesis-991012554767403412 ; http://repository.ust.hk/ir/bitstream/1783.1-91050/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2] [3] [4] [5] … [1550]

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