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You searched for subject:(CBED). Showing records 1 – 6 of 6 total matches.

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North Carolina State University

1. Du, Yan. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.

Degree: PhD, Electrical Engineering, 2009, North Carolina State University

 SiGe source/drain technology has been sucessfully applied to bulk metal oxide semiconductor field effect transistors (MOSFETs). Both channel mobility and source/drain contact resistivity are substantially… (more)

Subjects/Keywords: nanowire; SiGe; Pt ALD; strain; CBED

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APA (6th Edition):

Du, Y. (2009). Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3433

Chicago Manual of Style (16th Edition):

Du, Yan. “Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.” 2009. Doctoral Dissertation, North Carolina State University. Accessed January 27, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3433.

MLA Handbook (7th Edition):

Du, Yan. “Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.” 2009. Web. 27 Jan 2020.

Vancouver:

Du Y. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2020 Jan 27]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3433.

Council of Science Editors:

Du Y. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3433


Université de Grenoble

2. Martin, Yannick. Development of electron microscopy diffraction techniques for the study of two and three dimensional materials : Développement de techniques de diffraction électronique pour l’étude de matériaux bi- et tri-dimensionnels.

Degree: Docteur es, Nanophysique, 2014, Université de Grenoble

De par leurs propriétés physico-chimiques spécifiques, les nanomatériaux attirent de plus en plus la communauté scientifique. Dans ce contexte, il est important d'améliorer les techniques… (more)

Subjects/Keywords: Microscopie Électronique en Transmission (MET); Diffraction en faisceau convergent (CBED); Nanodiffraction; Déformation; Graphène; Mesure d'épaisseur; Transmission Electron Microscopy (TEM); Convergent Beam Electron Diffraction (CBED); Nanodiffraction; Deformation; Graphene; Thickness measurement; 530

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APA (6th Edition):

Martin, Y. (2014). Development of electron microscopy diffraction techniques for the study of two and three dimensional materials : Développement de techniques de diffraction électronique pour l’étude de matériaux bi- et tri-dimensionnels. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2014GRENY066

Chicago Manual of Style (16th Edition):

Martin, Yannick. “Development of electron microscopy diffraction techniques for the study of two and three dimensional materials : Développement de techniques de diffraction électronique pour l’étude de matériaux bi- et tri-dimensionnels.” 2014. Doctoral Dissertation, Université de Grenoble. Accessed January 27, 2020. http://www.theses.fr/2014GRENY066.

MLA Handbook (7th Edition):

Martin, Yannick. “Development of electron microscopy diffraction techniques for the study of two and three dimensional materials : Développement de techniques de diffraction électronique pour l’étude de matériaux bi- et tri-dimensionnels.” 2014. Web. 27 Jan 2020.

Vancouver:

Martin Y. Development of electron microscopy diffraction techniques for the study of two and three dimensional materials : Développement de techniques de diffraction électronique pour l’étude de matériaux bi- et tri-dimensionnels. [Internet] [Doctoral dissertation]. Université de Grenoble; 2014. [cited 2020 Jan 27]. Available from: http://www.theses.fr/2014GRENY066.

Council of Science Editors:

Martin Y. Development of electron microscopy diffraction techniques for the study of two and three dimensional materials : Développement de techniques de diffraction électronique pour l’étude de matériaux bi- et tri-dimensionnels. [Doctoral Dissertation]. Université de Grenoble; 2014. Available from: http://www.theses.fr/2014GRENY066

3. Brunetti, Guillaume. Mesure de déformation par CBED : développement et application d'une approche multi-clichés : Strain measurement by CBED : development and application of a multiple patterns approach.

Degree: Docteur es, Sciences des matériaux, 2009, Metz

La connaissance des déformations et des contraintes est importante pour une meilleure compréhension des propriétés des matériaux. Plusieurs techniques expérimentales sont disponibles (XRD, Raman …),… (more)

Subjects/Keywords: MET; CBED; Mesure des paramètres cristallins; Approche multi-clichés; Superalliages; Mesure des déformations

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APA (6th Edition):

Brunetti, G. (2009). Mesure de déformation par CBED : développement et application d'une approche multi-clichés : Strain measurement by CBED : development and application of a multiple patterns approach. (Doctoral Dissertation). Metz. Retrieved from http://www.theses.fr/2009METZ031S

Chicago Manual of Style (16th Edition):

Brunetti, Guillaume. “Mesure de déformation par CBED : développement et application d'une approche multi-clichés : Strain measurement by CBED : development and application of a multiple patterns approach.” 2009. Doctoral Dissertation, Metz. Accessed January 27, 2020. http://www.theses.fr/2009METZ031S.

MLA Handbook (7th Edition):

Brunetti, Guillaume. “Mesure de déformation par CBED : développement et application d'une approche multi-clichés : Strain measurement by CBED : development and application of a multiple patterns approach.” 2009. Web. 27 Jan 2020.

Vancouver:

Brunetti G. Mesure de déformation par CBED : développement et application d'une approche multi-clichés : Strain measurement by CBED : development and application of a multiple patterns approach. [Internet] [Doctoral dissertation]. Metz; 2009. [cited 2020 Jan 27]. Available from: http://www.theses.fr/2009METZ031S.

Council of Science Editors:

Brunetti G. Mesure de déformation par CBED : développement et application d'une approche multi-clichés : Strain measurement by CBED : development and application of a multiple patterns approach. [Doctoral Dissertation]. Metz; 2009. Available from: http://www.theses.fr/2009METZ031S


North Carolina State University

4. Biggerstaff, Trinity Leigh. Characterization of the Origin of Mobility Loss at the SiC/SiO2 Interface.

Degree: PhD, Materials Science and Engineering, 2008, North Carolina State University

 Silicon carbide (SiC) is a wide band gap semiconductor with material properties which make it ideally suited for high temperature, high frequency, and high power… (more)

Subjects/Keywords: Interface; EELS; CBED; SiC/SiO2; STEM; TEM

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APA (6th Edition):

Biggerstaff, T. L. (2008). Characterization of the Origin of Mobility Loss at the SiC/SiO2 Interface. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3253

Chicago Manual of Style (16th Edition):

Biggerstaff, Trinity Leigh. “Characterization of the Origin of Mobility Loss at the SiC/SiO2 Interface.” 2008. Doctoral Dissertation, North Carolina State University. Accessed January 27, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3253.

MLA Handbook (7th Edition):

Biggerstaff, Trinity Leigh. “Characterization of the Origin of Mobility Loss at the SiC/SiO2 Interface.” 2008. Web. 27 Jan 2020.

Vancouver:

Biggerstaff TL. Characterization of the Origin of Mobility Loss at the SiC/SiO2 Interface. [Internet] [Doctoral dissertation]. North Carolina State University; 2008. [cited 2020 Jan 27]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3253.

Council of Science Editors:

Biggerstaff TL. Characterization of the Origin of Mobility Loss at the SiC/SiO2 Interface. [Doctoral Dissertation]. North Carolina State University; 2008. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3253

5. Mogili, Naga Vishnu V. Quantitative analysis of lattice strains and crystal polarity in semiconductor nanomaterials using convergent beam electron dffraction.

Degree: 2013, University of Limerick

 In this thesis, different Convergent Beam Electron Diffraction (CBED) methods were developed and verified for the investigation of local lattice strains between ≈ 10nm wide… (more)

Subjects/Keywords: convergent beam electron diffraction; CBED; semiconductor nanomaterials

…111 4.8.2 Non-uniqueness of the CBED lattice parameters… …201 x List of Acronyms ADF Annular Dark Field BF Bright Field CBED Convergent Beam… …vacuum systems, the Convergent Beam Electron Diffraction (CBED) technique is… …nanometre sized electron probes of CBED technique, it is possible to generate information from a… …localised region, which is beyond the reach by any other diffraction method. By correlating CBED… 

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APA (6th Edition):

Mogili, N. V. V. (2013). Quantitative analysis of lattice strains and crystal polarity in semiconductor nanomaterials using convergent beam electron dffraction. (Thesis). University of Limerick. Retrieved from http://hdl.handle.net/10344/3283

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mogili, Naga Vishnu V. “Quantitative analysis of lattice strains and crystal polarity in semiconductor nanomaterials using convergent beam electron dffraction.” 2013. Thesis, University of Limerick. Accessed January 27, 2020. http://hdl.handle.net/10344/3283.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mogili, Naga Vishnu V. “Quantitative analysis of lattice strains and crystal polarity in semiconductor nanomaterials using convergent beam electron dffraction.” 2013. Web. 27 Jan 2020.

Vancouver:

Mogili NVV. Quantitative analysis of lattice strains and crystal polarity in semiconductor nanomaterials using convergent beam electron dffraction. [Internet] [Thesis]. University of Limerick; 2013. [cited 2020 Jan 27]. Available from: http://hdl.handle.net/10344/3283.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mogili NVV. Quantitative analysis of lattice strains and crystal polarity in semiconductor nanomaterials using convergent beam electron dffraction. [Thesis]. University of Limerick; 2013. Available from: http://hdl.handle.net/10344/3283

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

6. Zhao, Wenjun. Reliable Local Strain Characterization in Si/SiGe Based Electronic Materials System.

Degree: PhD, Materials Science and Engineering, 2007, North Carolina State University

 In this research we first developed a procedure to determine the strain in a TEM sample. This procedure includes HOLZ line detection from a Convergent… (more)

Subjects/Keywords: finite element; CBED; strain; stress; TEM; CMOS; STEM; SiGe

…procedure includes HOLZ line detection from a Convergent beam electron diffraction (CBED)… …searching lattice parameters by χ2 minimization. With only CBED technique, strain measurement on… …structures strain could be determined in the center of the channel. We demonstrated the CBED strain… …with CBED and finite element (FE) modeling and quantitatively investigated the… …foil and HOLZ line splitting. Therefore a clear CBED pattern can not be obtained from a TEM… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zhao, W. (2007). Reliable Local Strain Characterization in Si/SiGe Based Electronic Materials System. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/5046

Chicago Manual of Style (16th Edition):

Zhao, Wenjun. “Reliable Local Strain Characterization in Si/SiGe Based Electronic Materials System.” 2007. Doctoral Dissertation, North Carolina State University. Accessed January 27, 2020. http://www.lib.ncsu.edu/resolver/1840.16/5046.

MLA Handbook (7th Edition):

Zhao, Wenjun. “Reliable Local Strain Characterization in Si/SiGe Based Electronic Materials System.” 2007. Web. 27 Jan 2020.

Vancouver:

Zhao W. Reliable Local Strain Characterization in Si/SiGe Based Electronic Materials System. [Internet] [Doctoral dissertation]. North Carolina State University; 2007. [cited 2020 Jan 27]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5046.

Council of Science Editors:

Zhao W. Reliable Local Strain Characterization in Si/SiGe Based Electronic Materials System. [Doctoral Dissertation]. North Carolina State University; 2007. Available from: http://www.lib.ncsu.edu/resolver/1840.16/5046

.