Advanced search options

Advanced Search Options 🞨

Browse by author name (“Author name starts with…”).

Find ETDs with:

in
/  
in
/  
in
/  
in

Written in Published in Earliest date Latest date

Sorted by

Results per page:

Sorted by: relevance · author · university · dateNew search

You searched for subject:(Bipolar transistors). Showing records 1 – 30 of 129 total matches.

[1] [2] [3] [4] [5]

Search Limiters

Last 2 Years | English Only

Universities

Degrees

Levels

Country

▼ Search Limiters


University of Johannesburg

1. Prest, Rory Bruce. Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits.

Degree: 2014, University of Johannesburg

D.Ing. (Electrical & Electronic Engineering )

In recent years, bipolar transistors have become available with large current ratings (300A-1DODA). The purpose 01 this study is… (more)

Subjects/Keywords: Bipolar transistors; Bipolar integrated circuits; Junction transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Prest, R. B. (2014). Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits. (Thesis). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/9511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Prest, Rory Bruce. “Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits.” 2014. Thesis, University of Johannesburg. Accessed March 22, 2019. http://hdl.handle.net/10210/9511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Prest, Rory Bruce. “Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits.” 2014. Web. 22 Mar 2019.

Vancouver:

Prest RB. Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits. [Internet] [Thesis]. University of Johannesburg; 2014. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/10210/9511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Prest RB. Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits. [Thesis]. University of Johannesburg; 2014. Available from: http://hdl.handle.net/10210/9511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Alberta

2. Nathan, Arokia. Carrier transport in magnetotransistors.

Degree: PhD, Department of Electrical Engineering, 1988, University of Alberta

Subjects/Keywords: Bipolar transistors.

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Nathan, A. (1988). Carrier transport in magnetotransistors. (Doctoral Dissertation). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/r781wh77d

Chicago Manual of Style (16th Edition):

Nathan, Arokia. “Carrier transport in magnetotransistors.” 1988. Doctoral Dissertation, University of Alberta. Accessed March 22, 2019. https://era.library.ualberta.ca/files/r781wh77d.

MLA Handbook (7th Edition):

Nathan, Arokia. “Carrier transport in magnetotransistors.” 1988. Web. 22 Mar 2019.

Vancouver:

Nathan A. Carrier transport in magnetotransistors. [Internet] [Doctoral dissertation]. University of Alberta; 1988. [cited 2019 Mar 22]. Available from: https://era.library.ualberta.ca/files/r781wh77d.

Council of Science Editors:

Nathan A. Carrier transport in magnetotransistors. [Doctoral Dissertation]. University of Alberta; 1988. Available from: https://era.library.ualberta.ca/files/r781wh77d


University of Alberta

3. Doan, My The. Investigation of laterial transistor structures designed as magnetic field sensors.

Degree: MS, Department of Electrical Engineering, 1990, University of Alberta

Subjects/Keywords: Bipolar transistors.

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Doan, M. T. (1990). Investigation of laterial transistor structures designed as magnetic field sensors. (Masters Thesis). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/6682x6093

Chicago Manual of Style (16th Edition):

Doan, My The. “Investigation of laterial transistor structures designed as magnetic field sensors.” 1990. Masters Thesis, University of Alberta. Accessed March 22, 2019. https://era.library.ualberta.ca/files/6682x6093.

MLA Handbook (7th Edition):

Doan, My The. “Investigation of laterial transistor structures designed as magnetic field sensors.” 1990. Web. 22 Mar 2019.

Vancouver:

Doan MT. Investigation of laterial transistor structures designed as magnetic field sensors. [Internet] [Masters thesis]. University of Alberta; 1990. [cited 2019 Mar 22]. Available from: https://era.library.ualberta.ca/files/6682x6093.

Council of Science Editors:

Doan MT. Investigation of laterial transistor structures designed as magnetic field sensors. [Masters Thesis]. University of Alberta; 1990. Available from: https://era.library.ualberta.ca/files/6682x6093

4. Williams, C. Lea. Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors.

Degree: MS, 1988, Oregon Health Sciences University

Subjects/Keywords: Bipolar transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Williams, C. L. (1988). Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors. (Thesis). Oregon Health Sciences University. Retrieved from doi:10.6083/M4MG7MF5 ; http://digitalcommons.ohsu.edu/etd/266

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Williams, C Lea. “Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors.” 1988. Thesis, Oregon Health Sciences University. Accessed March 22, 2019. doi:10.6083/M4MG7MF5 ; http://digitalcommons.ohsu.edu/etd/266.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Williams, C Lea. “Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors.” 1988. Web. 22 Mar 2019.

Vancouver:

Williams CL. Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors. [Internet] [Thesis]. Oregon Health Sciences University; 1988. [cited 2019 Mar 22]. Available from: doi:10.6083/M4MG7MF5 ; http://digitalcommons.ohsu.edu/etd/266.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Williams CL. Optimization and temperature dependence of current gain in polysilicon-emitter-contacted bipolar transistors. [Thesis]. Oregon Health Sciences University; 1988. Available from: doi:10.6083/M4MG7MF5 ; http://digitalcommons.ohsu.edu/etd/266

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Arizona

5. LoCascio, James Jason. Design of lateral p-n-p transistors .

Degree: 1979, University of Arizona

Subjects/Keywords: Bipolar transistors.

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

LoCascio, J. J. (1979). Design of lateral p-n-p transistors . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/557281

Chicago Manual of Style (16th Edition):

LoCascio, James Jason. “Design of lateral p-n-p transistors .” 1979. Masters Thesis, University of Arizona. Accessed March 22, 2019. http://hdl.handle.net/10150/557281.

MLA Handbook (7th Edition):

LoCascio, James Jason. “Design of lateral p-n-p transistors .” 1979. Web. 22 Mar 2019.

Vancouver:

LoCascio JJ. Design of lateral p-n-p transistors . [Internet] [Masters thesis]. University of Arizona; 1979. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/10150/557281.

Council of Science Editors:

LoCascio JJ. Design of lateral p-n-p transistors . [Masters Thesis]. University of Arizona; 1979. Available from: http://hdl.handle.net/10150/557281


University of Arizona

6. Petersen, Stephen Arthur, 1957-. HOT CARRIER EFFECTS IN SELF-ALIGNED BIPOLAR TRANSISTORS (HOT ELECTRON) .

Degree: 1986, University of Arizona

Subjects/Keywords: Bipolar transistors.

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Petersen, Stephen Arthur, 1. (1986). HOT CARRIER EFFECTS IN SELF-ALIGNED BIPOLAR TRANSISTORS (HOT ELECTRON) . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/291241

Chicago Manual of Style (16th Edition):

Petersen, Stephen Arthur, 1957-. “HOT CARRIER EFFECTS IN SELF-ALIGNED BIPOLAR TRANSISTORS (HOT ELECTRON) .” 1986. Masters Thesis, University of Arizona. Accessed March 22, 2019. http://hdl.handle.net/10150/291241.

MLA Handbook (7th Edition):

Petersen, Stephen Arthur, 1957-. “HOT CARRIER EFFECTS IN SELF-ALIGNED BIPOLAR TRANSISTORS (HOT ELECTRON) .” 1986. Web. 22 Mar 2019.

Vancouver:

Petersen, Stephen Arthur 1. HOT CARRIER EFFECTS IN SELF-ALIGNED BIPOLAR TRANSISTORS (HOT ELECTRON) . [Internet] [Masters thesis]. University of Arizona; 1986. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/10150/291241.

Council of Science Editors:

Petersen, Stephen Arthur 1. HOT CARRIER EFFECTS IN SELF-ALIGNED BIPOLAR TRANSISTORS (HOT ELECTRON) . [Masters Thesis]. University of Arizona; 1986. Available from: http://hdl.handle.net/10150/291241


Oregon State University

7. Li, Ling. Experimental verification of a new model for bipolar transistor flicker noise.

Degree: MS, Electrical and Computer Engineering, 2000, Oregon State University

 Previous studies on low frequency flicker noise in bipolar junction transistors (BJT) are reviewed. The original BJT flicker noise sources are mainly attributed to the… (more)

Subjects/Keywords: Bipolar transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Li, L. (2000). Experimental verification of a new model for bipolar transistor flicker noise. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/33117

Chicago Manual of Style (16th Edition):

Li, Ling. “Experimental verification of a new model for bipolar transistor flicker noise.” 2000. Masters Thesis, Oregon State University. Accessed March 22, 2019. http://hdl.handle.net/1957/33117.

MLA Handbook (7th Edition):

Li, Ling. “Experimental verification of a new model for bipolar transistor flicker noise.” 2000. Web. 22 Mar 2019.

Vancouver:

Li L. Experimental verification of a new model for bipolar transistor flicker noise. [Internet] [Masters thesis]. Oregon State University; 2000. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/1957/33117.

Council of Science Editors:

Li L. Experimental verification of a new model for bipolar transistor flicker noise. [Masters Thesis]. Oregon State University; 2000. Available from: http://hdl.handle.net/1957/33117


Oregon State University

8. Gazeley, William G. A study of the temperature dependence of the DC current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors with application to bandgap voltage reference sources.

Degree: MS, Electrical and Computer Engineering, 1989, Oregon State University

 The bandgap voltage reference technique, as implemented in Silicon technology, has evolved to a state of advanced development and become the method of choice for… (more)

Subjects/Keywords: Bipolar transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gazeley, W. G. (1989). A study of the temperature dependence of the DC current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors with application to bandgap voltage reference sources. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/39877

Chicago Manual of Style (16th Edition):

Gazeley, William G. “A study of the temperature dependence of the DC current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors with application to bandgap voltage reference sources.” 1989. Masters Thesis, Oregon State University. Accessed March 22, 2019. http://hdl.handle.net/1957/39877.

MLA Handbook (7th Edition):

Gazeley, William G. “A study of the temperature dependence of the DC current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors with application to bandgap voltage reference sources.” 1989. Web. 22 Mar 2019.

Vancouver:

Gazeley WG. A study of the temperature dependence of the DC current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors with application to bandgap voltage reference sources. [Internet] [Masters thesis]. Oregon State University; 1989. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/1957/39877.

Council of Science Editors:

Gazeley WG. A study of the temperature dependence of the DC current-voltage characteristics of AlGaAs/GaAs heterojunction bipolar transistors with application to bandgap voltage reference sources. [Masters Thesis]. Oregon State University; 1989. Available from: http://hdl.handle.net/1957/39877


University of British Columbia

9. Szeto, Ngam. Reliability study of bipolar transistors with metal-insulator-semiconductor heterojunction emitters .

Degree: 1988, University of British Columbia

Bipolar transistors employing an MIS junction for the emitter exhibit the very desirable properties of high operating frequency and/or high common emitter gains. The topic… (more)

Subjects/Keywords: Bipolar transistors - Reliability

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Szeto, N. (1988). Reliability study of bipolar transistors with metal-insulator-semiconductor heterojunction emitters . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/42013

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Szeto, Ngam. “Reliability study of bipolar transistors with metal-insulator-semiconductor heterojunction emitters .” 1988. Thesis, University of British Columbia. Accessed March 22, 2019. http://hdl.handle.net/2429/42013.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Szeto, Ngam. “Reliability study of bipolar transistors with metal-insulator-semiconductor heterojunction emitters .” 1988. Web. 22 Mar 2019.

Vancouver:

Szeto N. Reliability study of bipolar transistors with metal-insulator-semiconductor heterojunction emitters . [Internet] [Thesis]. University of British Columbia; 1988. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/2429/42013.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Szeto N. Reliability study of bipolar transistors with metal-insulator-semiconductor heterojunction emitters . [Thesis]. University of British Columbia; 1988. Available from: http://hdl.handle.net/2429/42013

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

10. Appaswamy, Aravind. Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments.

Degree: PhD, Electrical and Computer Engineering, 2009, Georgia Tech

 The objective of this work is to investigate the performance of SiGe HBTs and scaled CMOS devices in extreme environments. In this work, the inverse… (more)

Subjects/Keywords: Cryogenics; HBT; Bipolar transistors; Radiation; Heterojunctions; Bipolar transistors; Metal oxide semiconductors, Complementary; Extreme environments

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Appaswamy, A. (2009). Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/33970

Chicago Manual of Style (16th Edition):

Appaswamy, Aravind. “Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments.” 2009. Doctoral Dissertation, Georgia Tech. Accessed March 22, 2019. http://hdl.handle.net/1853/33970.

MLA Handbook (7th Edition):

Appaswamy, Aravind. “Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments.” 2009. Web. 22 Mar 2019.

Vancouver:

Appaswamy A. Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments. [Internet] [Doctoral dissertation]. Georgia Tech; 2009. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/1853/33970.

Council of Science Editors:

Appaswamy A. Operation of inverse mode SiGe HBTs and ultra-scaled CMOS devices in extreme environments. [Doctoral Dissertation]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/33970


University of British Columbia

11. Laser, Allan Paul. Calculation of the maximum frequency of oscillation for microwave heterojunction bipolar transistors .

Degree: 1990, University of British Columbia

 An investigation into various methods of calculation of the high frequency performance parameter f[formula omitted] for microwave heterojunction bipolar transistors is presented. Two high frequency… (more)

Subjects/Keywords: Microwave transistors; Bipolar transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Laser, A. P. (1990). Calculation of the maximum frequency of oscillation for microwave heterojunction bipolar transistors . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/29630

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Laser, Allan Paul. “Calculation of the maximum frequency of oscillation for microwave heterojunction bipolar transistors .” 1990. Thesis, University of British Columbia. Accessed March 22, 2019. http://hdl.handle.net/2429/29630.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Laser, Allan Paul. “Calculation of the maximum frequency of oscillation for microwave heterojunction bipolar transistors .” 1990. Web. 22 Mar 2019.

Vancouver:

Laser AP. Calculation of the maximum frequency of oscillation for microwave heterojunction bipolar transistors . [Internet] [Thesis]. University of British Columbia; 1990. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/2429/29630.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Laser AP. Calculation of the maximum frequency of oscillation for microwave heterojunction bipolar transistors . [Thesis]. University of British Columbia; 1990. Available from: http://hdl.handle.net/2429/29630

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

12. Cheng, Peng. Reliability of SiGe HBTs for extreme environment and RF applications.

Degree: PhD, Electrical and Computer Engineering, 2010, Georgia Tech

 The objective of the proposed research is to characterize the safe-operating-area of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) under radiofrequency (RF) operation and extreme environments.… (more)

Subjects/Keywords: Extreme environment; SiGe HBTs; RF; Power amplifier; Bipolar transistors; Heterojunctions; Semiconductors; Silicones; Germanium; Transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Cheng, P. (2010). Reliability of SiGe HBTs for extreme environment and RF applications. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/42836

Chicago Manual of Style (16th Edition):

Cheng, Peng. “Reliability of SiGe HBTs for extreme environment and RF applications.” 2010. Doctoral Dissertation, Georgia Tech. Accessed March 22, 2019. http://hdl.handle.net/1853/42836.

MLA Handbook (7th Edition):

Cheng, Peng. “Reliability of SiGe HBTs for extreme environment and RF applications.” 2010. Web. 22 Mar 2019.

Vancouver:

Cheng P. Reliability of SiGe HBTs for extreme environment and RF applications. [Internet] [Doctoral dissertation]. Georgia Tech; 2010. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/1853/42836.

Council of Science Editors:

Cheng P. Reliability of SiGe HBTs for extreme environment and RF applications. [Doctoral Dissertation]. Georgia Tech; 2010. Available from: http://hdl.handle.net/1853/42836


University of Johannesburg

13. Ferreira, Jan Abraham. Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette.

Degree: 2014, University of Johannesburg

M.Ing. (Electrical and Electronic Engineering)

The possibilities and technology of converters with an alternating voltage link are investigated for high specific power conversion at high… (more)

Subjects/Keywords: Electric transformers; Electric current converters; Electric currents, Alternating; Bipolar transistors; Field-effect transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ferreira, J. A. (2014). Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette. (Thesis). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/9983

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ferreira, Jan Abraham. “Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette.” 2014. Thesis, University of Johannesburg. Accessed March 22, 2019. http://hdl.handle.net/10210/9983.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ferreira, Jan Abraham. “Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette.” 2014. Web. 22 Mar 2019.

Vancouver:

Ferreira JA. Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette. [Internet] [Thesis]. University of Johannesburg; 2014. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/10210/9983.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ferreira JA. Optimalisasie van stelsels met wisselspanningstussenkringmutators as elektroniese koppelstelsels tussen wisselspanningsnette en gelykspanningsnette. [Thesis]. University of Johannesburg; 2014. Available from: http://hdl.handle.net/10210/9983

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Hawaii – Manoa

14. Okada, David N. The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor.

Degree: PhD, 2009, University of Hawaii – Manoa

Typescript.

Bibliography: leaves 308-310.

Photocopy.

xxix, 310 leaves, bound ill. 29 cm

Subjects/Keywords: Bipolar transistors; Metal oxide semiconductors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Okada, D. N. (2009). The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor. (Doctoral Dissertation). University of Hawaii – Manoa. Retrieved from http://hdl.handle.net/10125/9742

Chicago Manual of Style (16th Edition):

Okada, David N. “The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor.” 2009. Doctoral Dissertation, University of Hawaii – Manoa. Accessed March 22, 2019. http://hdl.handle.net/10125/9742.

MLA Handbook (7th Edition):

Okada, David N. “The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor.” 2009. Web. 22 Mar 2019.

Vancouver:

Okada DN. The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor. [Internet] [Doctoral dissertation]. University of Hawaii – Manoa; 2009. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/10125/9742.

Council of Science Editors:

Okada DN. The design, fabrication, characterization, and modeling of a novel semiconductor device : the metal oxide semiconductor bipolar junction transistor. [Doctoral Dissertation]. University of Hawaii – Manoa; 2009. Available from: http://hdl.handle.net/10125/9742


Hong Kong University of Science and Technology

15. Feng, Hao. Advanced insulated-gate bipolar transistors for high-speed hard-switching applications.

Degree: 2015, Hong Kong University of Science and Technology

 The insulated-gate bipolar transistors (IGBTs) have been widely used in a variety of power switching applications such as industrial motor drives, automotive and traction controls,… (more)

Subjects/Keywords: Insulated gate bipolar transistors; Design and construction; Power semiconductors; Switching circuits

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Feng, H. (2015). Advanced insulated-gate bipolar transistors for high-speed hard-switching applications. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1552134 ; http://repository.ust.hk/ir/bitstream/1783.1-83580/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Feng, Hao. “Advanced insulated-gate bipolar transistors for high-speed hard-switching applications.” 2015. Thesis, Hong Kong University of Science and Technology. Accessed March 22, 2019. https://doi.org/10.14711/thesis-b1552134 ; http://repository.ust.hk/ir/bitstream/1783.1-83580/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Feng, Hao. “Advanced insulated-gate bipolar transistors for high-speed hard-switching applications.” 2015. Web. 22 Mar 2019.

Vancouver:

Feng H. Advanced insulated-gate bipolar transistors for high-speed hard-switching applications. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2015. [cited 2019 Mar 22]. Available from: https://doi.org/10.14711/thesis-b1552134 ; http://repository.ust.hk/ir/bitstream/1783.1-83580/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Feng H. Advanced insulated-gate bipolar transistors for high-speed hard-switching applications. [Thesis]. Hong Kong University of Science and Technology; 2015. Available from: https://doi.org/10.14711/thesis-b1552134 ; http://repository.ust.hk/ir/bitstream/1783.1-83580/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


McGill University

16. Salmon, John C. Three phase current controlled PWM inverter using bipolar transistors.

Degree: M. Eng., Department of Electrical Engineering., 1984, McGill University

Subjects/Keywords: Electric inverters.; Bipolar transistors.

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Salmon, J. C. (1984). Three phase current controlled PWM inverter using bipolar transistors. (Masters Thesis). McGill University. Retrieved from http://digitool.library.mcgill.ca/thesisfile65309.pdf

Chicago Manual of Style (16th Edition):

Salmon, John C. “Three phase current controlled PWM inverter using bipolar transistors.” 1984. Masters Thesis, McGill University. Accessed March 22, 2019. http://digitool.library.mcgill.ca/thesisfile65309.pdf.

MLA Handbook (7th Edition):

Salmon, John C. “Three phase current controlled PWM inverter using bipolar transistors.” 1984. Web. 22 Mar 2019.

Vancouver:

Salmon JC. Three phase current controlled PWM inverter using bipolar transistors. [Internet] [Masters thesis]. McGill University; 1984. [cited 2019 Mar 22]. Available from: http://digitool.library.mcgill.ca/thesisfile65309.pdf.

Council of Science Editors:

Salmon JC. Three phase current controlled PWM inverter using bipolar transistors. [Masters Thesis]. McGill University; 1984. Available from: http://digitool.library.mcgill.ca/thesisfile65309.pdf


University of British Columbia

17. Ang, Oon Sim. Modeling of double heterojunction bipolar transistors .

Degree: 1990, University of British Columbia

 A one-dimensional analytical model in the Ebers-Moll formulation of a graded base double heterojunction bipolar transistor (DHBT) is developed and used to examine the effects… (more)

Subjects/Keywords: Bipolar transistors  – Mathematical models

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ang, . O. S. (1990). Modeling of double heterojunction bipolar transistors . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/29458

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ang, Oon Sim. “Modeling of double heterojunction bipolar transistors .” 1990. Thesis, University of British Columbia. Accessed March 22, 2019. http://hdl.handle.net/2429/29458.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ang, Oon Sim. “Modeling of double heterojunction bipolar transistors .” 1990. Web. 22 Mar 2019.

Vancouver:

Ang OS. Modeling of double heterojunction bipolar transistors . [Internet] [Thesis]. University of British Columbia; 1990. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/2429/29458.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ang OS. Modeling of double heterojunction bipolar transistors . [Thesis]. University of British Columbia; 1990. Available from: http://hdl.handle.net/2429/29458

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Stellenbosch University

18. Fourie, Reinhart. The development of a IGBT-based tap changer.

Degree: Electrical and Electronic Engineering, 2010, Stellenbosch University

Thesis (MScEng (Electrical and Electronic Engineering)) – University of Stellenbosch, 2010.

ENGLISH ABSTRACT: Voltage regulation on distribution networks has so far been done by means of… (more)

Subjects/Keywords: Electrical engineering; Voltage regulators; Insulated gate bipolar transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Fourie, R. (2010). The development of a IGBT-based tap changer. (Thesis). Stellenbosch University. Retrieved from http://hdl.handle.net/10019.1/4272

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Fourie, Reinhart. “The development of a IGBT-based tap changer.” 2010. Thesis, Stellenbosch University. Accessed March 22, 2019. http://hdl.handle.net/10019.1/4272.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Fourie, Reinhart. “The development of a IGBT-based tap changer.” 2010. Web. 22 Mar 2019.

Vancouver:

Fourie R. The development of a IGBT-based tap changer. [Internet] [Thesis]. Stellenbosch University; 2010. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/10019.1/4272.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Fourie R. The development of a IGBT-based tap changer. [Thesis]. Stellenbosch University; 2010. Available from: http://hdl.handle.net/10019.1/4272

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

19. Lee, Wai Kit. Modeling the distributed RC effects of BiCMOS technology at high frequency operations.

Degree: 2006, Hong Kong University of Science and Technology

 With BiCMOS technology, both BJT and MOS devices are available in building RF transceivers. To utilize these two devices in the front-end of systems, their… (more)

Subjects/Keywords: Bipolar integrated circuits; Metal oxide semiconductors, Complementary; Bipolar transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lee, W. K. (2006). Modeling the distributed RC effects of BiCMOS technology at high frequency operations. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b931412 ; http://repository.ust.hk/ir/bitstream/1783.1-2823/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Wai Kit. “Modeling the distributed RC effects of BiCMOS technology at high frequency operations.” 2006. Thesis, Hong Kong University of Science and Technology. Accessed March 22, 2019. https://doi.org/10.14711/thesis-b931412 ; http://repository.ust.hk/ir/bitstream/1783.1-2823/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Wai Kit. “Modeling the distributed RC effects of BiCMOS technology at high frequency operations.” 2006. Web. 22 Mar 2019.

Vancouver:

Lee WK. Modeling the distributed RC effects of BiCMOS technology at high frequency operations. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2006. [cited 2019 Mar 22]. Available from: https://doi.org/10.14711/thesis-b931412 ; http://repository.ust.hk/ir/bitstream/1783.1-2823/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee WK. Modeling the distributed RC effects of BiCMOS technology at high frequency operations. [Thesis]. Hong Kong University of Science and Technology; 2006. Available from: https://doi.org/10.14711/thesis-b931412 ; http://repository.ust.hk/ir/bitstream/1783.1-2823/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Hawaii – Manoa

20. Jiang, Fenglai. Distributed-channel bipolar device : experimentation, analytical modeling and applications.

Degree: PhD, 2009, University of Hawaii – Manoa

Microfiche.

2 v. (xliii, 597 leaves), bound ill. 29 cm

Subjects/Keywords: Bipolar transistors; Metal oxide semiconductor field-effect transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jiang, F. (2009). Distributed-channel bipolar device : experimentation, analytical modeling and applications. (Doctoral Dissertation). University of Hawaii – Manoa. Retrieved from http://hdl.handle.net/10125/9752

Chicago Manual of Style (16th Edition):

Jiang, Fenglai. “Distributed-channel bipolar device : experimentation, analytical modeling and applications.” 2009. Doctoral Dissertation, University of Hawaii – Manoa. Accessed March 22, 2019. http://hdl.handle.net/10125/9752.

MLA Handbook (7th Edition):

Jiang, Fenglai. “Distributed-channel bipolar device : experimentation, analytical modeling and applications.” 2009. Web. 22 Mar 2019.

Vancouver:

Jiang F. Distributed-channel bipolar device : experimentation, analytical modeling and applications. [Internet] [Doctoral dissertation]. University of Hawaii – Manoa; 2009. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/10125/9752.

Council of Science Editors:

Jiang F. Distributed-channel bipolar device : experimentation, analytical modeling and applications. [Doctoral Dissertation]. University of Hawaii – Manoa; 2009. Available from: http://hdl.handle.net/10125/9752


Ryerson University

21. Banerjee, Palash, K. AC-AC voltage regulation by switch mode PWM Cûk voltage controller with improved performance:.

Degree: 2014, Ryerson University

 In this research project, an AC Cûk voltage regulator has been proposed for maintaining constant voltage across the load during wide range of input voltage… (more)

Subjects/Keywords: Insulated gate bipolar transistors; Insulated gate bipolar transistors – -; Switching power supplies  – Design; Switching power supplies  – Design – -; Switching circuits; Switching circuits – -; Electric current converters; Electric current converters – -

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Banerjee, Palash, K. (2014). AC-AC voltage regulation by switch mode PWM Cûk voltage controller with improved performance:. (Thesis). Ryerson University. Retrieved from https://digital.library.ryerson.ca/islandora/object/RULA%3A2617

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Banerjee, Palash, K. “AC-AC voltage regulation by switch mode PWM Cûk voltage controller with improved performance:.” 2014. Thesis, Ryerson University. Accessed March 22, 2019. https://digital.library.ryerson.ca/islandora/object/RULA%3A2617.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Banerjee, Palash, K. “AC-AC voltage regulation by switch mode PWM Cûk voltage controller with improved performance:.” 2014. Web. 22 Mar 2019.

Vancouver:

Banerjee, Palash K. AC-AC voltage regulation by switch mode PWM Cûk voltage controller with improved performance:. [Internet] [Thesis]. Ryerson University; 2014. [cited 2019 Mar 22]. Available from: https://digital.library.ryerson.ca/islandora/object/RULA%3A2617.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Banerjee, Palash K. AC-AC voltage regulation by switch mode PWM Cûk voltage controller with improved performance:. [Thesis]. Ryerson University; 2014. Available from: https://digital.library.ryerson.ca/islandora/object/RULA%3A2617

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Oxford

22. Gold, Daniel Patrick. Transmission electron microscope studies of emitters of silicon bipolar transistors.

Degree: 1989, University of Oxford

 Transmission Electron Microscope (TEM) studies have been carried out of emitter regions in polysilicon contacted emitter bipolar transistors. The preparation of suitable TEM thin foils… (more)

Subjects/Keywords: 621.31042; Transmission electron microscopy : Bipolar transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gold, D. P. (1989). Transmission electron microscope studies of emitters of silicon bipolar transistors. (Doctoral Dissertation). University of Oxford. Retrieved from http://ora.ox.ac.uk/objects/uuid:ec5f58c3-ced6-44fe-8f1f-d042cdb7b7b7 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.253403

Chicago Manual of Style (16th Edition):

Gold, Daniel Patrick. “Transmission electron microscope studies of emitters of silicon bipolar transistors.” 1989. Doctoral Dissertation, University of Oxford. Accessed March 22, 2019. http://ora.ox.ac.uk/objects/uuid:ec5f58c3-ced6-44fe-8f1f-d042cdb7b7b7 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.253403.

MLA Handbook (7th Edition):

Gold, Daniel Patrick. “Transmission electron microscope studies of emitters of silicon bipolar transistors.” 1989. Web. 22 Mar 2019.

Vancouver:

Gold DP. Transmission electron microscope studies of emitters of silicon bipolar transistors. [Internet] [Doctoral dissertation]. University of Oxford; 1989. [cited 2019 Mar 22]. Available from: http://ora.ox.ac.uk/objects/uuid:ec5f58c3-ced6-44fe-8f1f-d042cdb7b7b7 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.253403.

Council of Science Editors:

Gold DP. Transmission electron microscope studies of emitters of silicon bipolar transistors. [Doctoral Dissertation]. University of Oxford; 1989. Available from: http://ora.ox.ac.uk/objects/uuid:ec5f58c3-ced6-44fe-8f1f-d042cdb7b7b7 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.253403


Oregon State University

23. Vuppala, Soujanya. Radiation effects in III-V heterojunction bipolar transistors.

Degree: MS, Electrical and Computer Engineering, 2004, Oregon State University

 Electron and neutron irradiation effects in InGaP/GaAs single heterojunction bipolar transistors are investigated in this thesis. Devices with different emitter sizes and grown by two… (more)

Subjects/Keywords: Bipolar transistors  – Effect of radiation on

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Vuppala, S. (2004). Radiation effects in III-V heterojunction bipolar transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/22452

Chicago Manual of Style (16th Edition):

Vuppala, Soujanya. “Radiation effects in III-V heterojunction bipolar transistors.” 2004. Masters Thesis, Oregon State University. Accessed March 22, 2019. http://hdl.handle.net/1957/22452.

MLA Handbook (7th Edition):

Vuppala, Soujanya. “Radiation effects in III-V heterojunction bipolar transistors.” 2004. Web. 22 Mar 2019.

Vancouver:

Vuppala S. Radiation effects in III-V heterojunction bipolar transistors. [Internet] [Masters thesis]. Oregon State University; 2004. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/1957/22452.

Council of Science Editors:

Vuppala S. Radiation effects in III-V heterojunction bipolar transistors. [Masters Thesis]. Oregon State University; 2004. Available from: http://hdl.handle.net/1957/22452

24. Li, Ding. High frequency characterization and modeling of AlGaAs/GaAs HBT Darlington feedback amplifiers.

Degree: PhD, 1994, Oregon Health Sciences University

Subjects/Keywords: Bipolar transistors; Feedback amplifiers; Semiconductors  – Characterization

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Li, D. (1994). High frequency characterization and modeling of AlGaAs/GaAs HBT Darlington feedback amplifiers. (Doctoral Dissertation). Oregon Health Sciences University. Retrieved from doi:10.6083/M4WM1BB3 ; http://digitalcommons.ohsu.edu/etd/140

Chicago Manual of Style (16th Edition):

Li, Ding. “High frequency characterization and modeling of AlGaAs/GaAs HBT Darlington feedback amplifiers.” 1994. Doctoral Dissertation, Oregon Health Sciences University. Accessed March 22, 2019. doi:10.6083/M4WM1BB3 ; http://digitalcommons.ohsu.edu/etd/140.

MLA Handbook (7th Edition):

Li, Ding. “High frequency characterization and modeling of AlGaAs/GaAs HBT Darlington feedback amplifiers.” 1994. Web. 22 Mar 2019.

Vancouver:

Li D. High frequency characterization and modeling of AlGaAs/GaAs HBT Darlington feedback amplifiers. [Internet] [Doctoral dissertation]. Oregon Health Sciences University; 1994. [cited 2019 Mar 22]. Available from: doi:10.6083/M4WM1BB3 ; http://digitalcommons.ohsu.edu/etd/140.

Council of Science Editors:

Li D. High frequency characterization and modeling of AlGaAs/GaAs HBT Darlington feedback amplifiers. [Doctoral Dissertation]. Oregon Health Sciences University; 1994. Available from: doi:10.6083/M4WM1BB3 ; http://digitalcommons.ohsu.edu/etd/140


Georgia Tech

25. Poh, Chung Hang. Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology.

Degree: MS, Electrical and Computer Engineering, 2009, Georgia Tech

 The objective of this thesis is to design RF circuits using silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs) for communication system. The packaging effect for the… (more)

Subjects/Keywords: Packaging; RF; LNA; LCP; SiGe; Bipolar transistors; Heterojunctions; Polymer liquid crystals; Radio frequency integrated circuits

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Poh, C. H. (2009). Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology. (Masters Thesis). Georgia Tech. Retrieved from http://hdl.handle.net/1853/31662

Chicago Manual of Style (16th Edition):

Poh, Chung Hang. “Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology.” 2009. Masters Thesis, Georgia Tech. Accessed March 22, 2019. http://hdl.handle.net/1853/31662.

MLA Handbook (7th Edition):

Poh, Chung Hang. “Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology.” 2009. Web. 22 Mar 2019.

Vancouver:

Poh CH. Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology. [Internet] [Masters thesis]. Georgia Tech; 2009. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/1853/31662.

Council of Science Editors:

Poh CH. Radio frequency circuit design and packaging for silicon-germanium hetrojunction bipolar technology. [Masters Thesis]. Georgia Tech; 2009. Available from: http://hdl.handle.net/1853/31662


Ryerson University

26. Attar, Sara Sharifian. Development of an Electrothermal Simulation Tool for Integrated Circuits.

Degree: 2006, Ryerson University

 The goal of this research was to develop a capability for the electrothermal modeling of electronic circuits. The objective of the thermal modeling process was… (more)

Subjects/Keywords: Integrated circuits  – Thermal properties; Bipolar transistors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Attar, S. S. (2006). Development of an Electrothermal Simulation Tool for Integrated Circuits. (Thesis). Ryerson University. Retrieved from https://digital.library.ryerson.ca/islandora/object/RULA%3A2480

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Attar, Sara Sharifian. “Development of an Electrothermal Simulation Tool for Integrated Circuits.” 2006. Thesis, Ryerson University. Accessed March 22, 2019. https://digital.library.ryerson.ca/islandora/object/RULA%3A2480.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Attar, Sara Sharifian. “Development of an Electrothermal Simulation Tool for Integrated Circuits.” 2006. Web. 22 Mar 2019.

Vancouver:

Attar SS. Development of an Electrothermal Simulation Tool for Integrated Circuits. [Internet] [Thesis]. Ryerson University; 2006. [cited 2019 Mar 22]. Available from: https://digital.library.ryerson.ca/islandora/object/RULA%3A2480.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Attar SS. Development of an Electrothermal Simulation Tool for Integrated Circuits. [Thesis]. Ryerson University; 2006. Available from: https://digital.library.ryerson.ca/islandora/object/RULA%3A2480

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Toronto

27. Chen, Jingxuan. A Smart IGBT Gate Driver IC with Temperature Compensated Collector Current Sensing.

Degree: PhD, 2018, University of Toronto

 Precision current measurement is a critical function that must be incorporated into modern high voltage and high current power systems. Conventional IGBT current sensing methods… (more)

Subjects/Keywords: IGBT Current Sensing; IGBT Gate Driver IC; Insulated Gate Bipolar Transistors (IGBTs); 0544

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chen, J. (2018). A Smart IGBT Gate Driver IC with Temperature Compensated Collector Current Sensing. (Doctoral Dissertation). University of Toronto. Retrieved from http://hdl.handle.net/1807/89895

Chicago Manual of Style (16th Edition):

Chen, Jingxuan. “A Smart IGBT Gate Driver IC with Temperature Compensated Collector Current Sensing.” 2018. Doctoral Dissertation, University of Toronto. Accessed March 22, 2019. http://hdl.handle.net/1807/89895.

MLA Handbook (7th Edition):

Chen, Jingxuan. “A Smart IGBT Gate Driver IC with Temperature Compensated Collector Current Sensing.” 2018. Web. 22 Mar 2019.

Vancouver:

Chen J. A Smart IGBT Gate Driver IC with Temperature Compensated Collector Current Sensing. [Internet] [Doctoral dissertation]. University of Toronto; 2018. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/1807/89895.

Council of Science Editors:

Chen J. A Smart IGBT Gate Driver IC with Temperature Compensated Collector Current Sensing. [Doctoral Dissertation]. University of Toronto; 2018. Available from: http://hdl.handle.net/1807/89895


University of Missouri – Columbia

28. VanGordon, James A., 1984-. Hefner model parameters for power IGBTS under pulsed power conditions.

Degree: 2010, University of Missouri – Columbia

 While the power insulated gate bipolar transistor (IGBT) is used in many applications, it is not well characterized under pulsed power conditions. This makes the… (more)

Subjects/Keywords: Insulated gate bipolar transistors; Pulsed power systems; Electric capacity; Parameter estimation; Power electronics

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

VanGordon, James A., 1. (2010). Hefner model parameters for power IGBTS under pulsed power conditions. (Thesis). University of Missouri – Columbia. Retrieved from https://doi.org/10.32469/10355/10539

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

VanGordon, James A., 1984-. “Hefner model parameters for power IGBTS under pulsed power conditions.” 2010. Thesis, University of Missouri – Columbia. Accessed March 22, 2019. https://doi.org/10.32469/10355/10539.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

VanGordon, James A., 1984-. “Hefner model parameters for power IGBTS under pulsed power conditions.” 2010. Web. 22 Mar 2019.

Vancouver:

VanGordon, James A. 1. Hefner model parameters for power IGBTS under pulsed power conditions. [Internet] [Thesis]. University of Missouri – Columbia; 2010. [cited 2019 Mar 22]. Available from: https://doi.org/10.32469/10355/10539.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

VanGordon, James A. 1. Hefner model parameters for power IGBTS under pulsed power conditions. [Thesis]. University of Missouri – Columbia; 2010. Available from: https://doi.org/10.32469/10355/10539

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Virginia Tech

29. He, Jianqing. Investigation of transport mechanisms for n-p-n InP/InGaAs/InP double heterojunction bipolar transistors.

Degree: MS, Electrical Engineering, 1989, Virginia Tech

  A more complete model for InP/InGaAs Double Heterojunction Bipolar Transistors (DHBT) is obtained in this thesis by physically analyzing the transport process of the… (more)

Subjects/Keywords: Bipolar transistors; LD5655.V855 1989.H442

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

He, J. (1989). Investigation of transport mechanisms for n-p-n InP/InGaAs/InP double heterojunction bipolar transistors. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/44645

Chicago Manual of Style (16th Edition):

He, Jianqing. “Investigation of transport mechanisms for n-p-n InP/InGaAs/InP double heterojunction bipolar transistors.” 1989. Masters Thesis, Virginia Tech. Accessed March 22, 2019. http://hdl.handle.net/10919/44645.

MLA Handbook (7th Edition):

He, Jianqing. “Investigation of transport mechanisms for n-p-n InP/InGaAs/InP double heterojunction bipolar transistors.” 1989. Web. 22 Mar 2019.

Vancouver:

He J. Investigation of transport mechanisms for n-p-n InP/InGaAs/InP double heterojunction bipolar transistors. [Internet] [Masters thesis]. Virginia Tech; 1989. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/10919/44645.

Council of Science Editors:

He J. Investigation of transport mechanisms for n-p-n InP/InGaAs/InP double heterojunction bipolar transistors. [Masters Thesis]. Virginia Tech; 1989. Available from: http://hdl.handle.net/10919/44645


Virginia Tech

30. Mitter, Chang Su. Insulated gate bipolar transistor (IGBT) simulation using IG-Spice.

Degree: MS, Electrical Engineering, 1991, Virginia Tech

Subjects/Keywords: Bipolar transistors.; LD5655.V855 1991.M577

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mitter, C. S. (1991). Insulated gate bipolar transistor (IGBT) simulation using IG-Spice. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/41315

Chicago Manual of Style (16th Edition):

Mitter, Chang Su. “Insulated gate bipolar transistor (IGBT) simulation using IG-Spice.” 1991. Masters Thesis, Virginia Tech. Accessed March 22, 2019. http://hdl.handle.net/10919/41315.

MLA Handbook (7th Edition):

Mitter, Chang Su. “Insulated gate bipolar transistor (IGBT) simulation using IG-Spice.” 1991. Web. 22 Mar 2019.

Vancouver:

Mitter CS. Insulated gate bipolar transistor (IGBT) simulation using IG-Spice. [Internet] [Masters thesis]. Virginia Tech; 1991. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/10919/41315.

Council of Science Editors:

Mitter CS. Insulated gate bipolar transistor (IGBT) simulation using IG-Spice. [Masters Thesis]. Virginia Tech; 1991. Available from: http://hdl.handle.net/10919/41315

[1] [2] [3] [4] [5]

.