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You searched for subject:(BTI). Showing records 1 – 30 of 31 total matches.

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University of Minnesota

1. Satapathy, Saroj. A Revolving Reference Odometer Circuit for BTI-Induced Frequency Fluctuation Measurements under Fast DVFS Transients and Reconfigurable Feed Forward MUX PUF Design.

Degree: M.S.E.E., Electrical Engineering, 2014, University of Minnesota

 The frequency shift due to fast Bias Temperature Instability (BTI) related fast Dynamic Voltage and Frequency Scaled (DVFS) stress-recovery effects were measured using a high… (more)

Subjects/Keywords: BTI; DVFS; Odometer; PUF; reference; revolving

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Satapathy, S. (2014). A Revolving Reference Odometer Circuit for BTI-Induced Frequency Fluctuation Measurements under Fast DVFS Transients and Reconfigurable Feed Forward MUX PUF Design. (Masters Thesis). University of Minnesota. Retrieved from http://hdl.handle.net/11299/183283

Chicago Manual of Style (16th Edition):

Satapathy, Saroj. “A Revolving Reference Odometer Circuit for BTI-Induced Frequency Fluctuation Measurements under Fast DVFS Transients and Reconfigurable Feed Forward MUX PUF Design.” 2014. Masters Thesis, University of Minnesota. Accessed September 29, 2020. http://hdl.handle.net/11299/183283.

MLA Handbook (7th Edition):

Satapathy, Saroj. “A Revolving Reference Odometer Circuit for BTI-Induced Frequency Fluctuation Measurements under Fast DVFS Transients and Reconfigurable Feed Forward MUX PUF Design.” 2014. Web. 29 Sep 2020.

Vancouver:

Satapathy S. A Revolving Reference Odometer Circuit for BTI-Induced Frequency Fluctuation Measurements under Fast DVFS Transients and Reconfigurable Feed Forward MUX PUF Design. [Internet] [Masters thesis]. University of Minnesota; 2014. [cited 2020 Sep 29]. Available from: http://hdl.handle.net/11299/183283.

Council of Science Editors:

Satapathy S. A Revolving Reference Odometer Circuit for BTI-Induced Frequency Fluctuation Measurements under Fast DVFS Transients and Reconfigurable Feed Forward MUX PUF Design. [Masters Thesis]. University of Minnesota; 2014. Available from: http://hdl.handle.net/11299/183283


University of Minnesota

2. Jain, Pulkit. Methodologies for Statistical Characterization of Circuit Reliability in Advanced Silicon Processes.

Degree: PhD, Electrical Engineering, 2012, University of Minnesota

 Rising electric fields and imperfections due to atomic level scaling create non-ideal and stochastic electrodynamics inside a transistor.These appear as reliability mechanisms such as Bias… (more)

Subjects/Keywords: 3D IC; BTI; Reliability; RTN; TDDB; TSV

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APA (6th Edition):

Jain, P. (2012). Methodologies for Statistical Characterization of Circuit Reliability in Advanced Silicon Processes. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/165683

Chicago Manual of Style (16th Edition):

Jain, Pulkit. “Methodologies for Statistical Characterization of Circuit Reliability in Advanced Silicon Processes.” 2012. Doctoral Dissertation, University of Minnesota. Accessed September 29, 2020. http://hdl.handle.net/11299/165683.

MLA Handbook (7th Edition):

Jain, Pulkit. “Methodologies for Statistical Characterization of Circuit Reliability in Advanced Silicon Processes.” 2012. Web. 29 Sep 2020.

Vancouver:

Jain P. Methodologies for Statistical Characterization of Circuit Reliability in Advanced Silicon Processes. [Internet] [Doctoral dissertation]. University of Minnesota; 2012. [cited 2020 Sep 29]. Available from: http://hdl.handle.net/11299/165683.

Council of Science Editors:

Jain P. Methodologies for Statistical Characterization of Circuit Reliability in Advanced Silicon Processes. [Doctoral Dissertation]. University of Minnesota; 2012. Available from: http://hdl.handle.net/11299/165683

3. Laurent, Antoine. Etude des mécanismes physiques de fiabilité sur transistors Trigate/Nanowire : Study of the physical mechanisms affecting the reliability of the trigate transistors.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Université Grenoble Alpes (ComUE)

En continuant à suivre la loi de Moore, les transistors ont atteint des dimensions de plus en plus réduites. Cependant pour les largeurs inférieures à… (more)

Subjects/Keywords: Trigate; Nanofil; Fiabilité; Bti; Porteurs Chauds; Microélectronique; Trigate; Nanowire; Reliability; Bti; Hot Carriers; Microelectronic; 620

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APA (6th Edition):

Laurent, A. (2018). Etude des mécanismes physiques de fiabilité sur transistors Trigate/Nanowire : Study of the physical mechanisms affecting the reliability of the trigate transistors. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2018GREAT024

Chicago Manual of Style (16th Edition):

Laurent, Antoine. “Etude des mécanismes physiques de fiabilité sur transistors Trigate/Nanowire : Study of the physical mechanisms affecting the reliability of the trigate transistors.” 2018. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed September 29, 2020. http://www.theses.fr/2018GREAT024.

MLA Handbook (7th Edition):

Laurent, Antoine. “Etude des mécanismes physiques de fiabilité sur transistors Trigate/Nanowire : Study of the physical mechanisms affecting the reliability of the trigate transistors.” 2018. Web. 29 Sep 2020.

Vancouver:

Laurent A. Etude des mécanismes physiques de fiabilité sur transistors Trigate/Nanowire : Study of the physical mechanisms affecting the reliability of the trigate transistors. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2018. [cited 2020 Sep 29]. Available from: http://www.theses.fr/2018GREAT024.

Council of Science Editors:

Laurent A. Etude des mécanismes physiques de fiabilité sur transistors Trigate/Nanowire : Study of the physical mechanisms affecting the reliability of the trigate transistors. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2018. Available from: http://www.theses.fr/2018GREAT024

4. Nouguier, Damien. Etude statistique et modélisation de la dégradation NBTI pour les technologies CMOS FDSOI et BULK. : Statistical study and modeling of NBTI degradation for CMOS FDSOI and BULK technologies.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Université Grenoble Alpes (ComUE)

L’industrie microélectronique arrive à concevoir des transistors atteignant dimensions de l’ordre de la dizaine de nanomètres. Et ce faisant elle tend atteindre ses limites en… (more)

Subjects/Keywords: Bti; Modèle; Fiabilité; Variabilité; Cmos/pmos; Statistique; Bti; Modeling; Fiability; Variability; Cmos/pmos; Statistical; 620

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APA (6th Edition):

Nouguier, D. (2018). Etude statistique et modélisation de la dégradation NBTI pour les technologies CMOS FDSOI et BULK. : Statistical study and modeling of NBTI degradation for CMOS FDSOI and BULK technologies. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2018GREAT068

Chicago Manual of Style (16th Edition):

Nouguier, Damien. “Etude statistique et modélisation de la dégradation NBTI pour les technologies CMOS FDSOI et BULK. : Statistical study and modeling of NBTI degradation for CMOS FDSOI and BULK technologies.” 2018. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed September 29, 2020. http://www.theses.fr/2018GREAT068.

MLA Handbook (7th Edition):

Nouguier, Damien. “Etude statistique et modélisation de la dégradation NBTI pour les technologies CMOS FDSOI et BULK. : Statistical study and modeling of NBTI degradation for CMOS FDSOI and BULK technologies.” 2018. Web. 29 Sep 2020.

Vancouver:

Nouguier D. Etude statistique et modélisation de la dégradation NBTI pour les technologies CMOS FDSOI et BULK. : Statistical study and modeling of NBTI degradation for CMOS FDSOI and BULK technologies. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2018. [cited 2020 Sep 29]. Available from: http://www.theses.fr/2018GREAT068.

Council of Science Editors:

Nouguier D. Etude statistique et modélisation de la dégradation NBTI pour les technologies CMOS FDSOI et BULK. : Statistical study and modeling of NBTI degradation for CMOS FDSOI and BULK technologies. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2018. Available from: http://www.theses.fr/2018GREAT068

5. Altieri scarpato, Mauricio. Estimation de la performance des circuits numériques sous variations PVT et vieillissement : Digital circuit performance estimation under PVT and aging effects.

Degree: Docteur es, Nano electronique et nano technologies, 2017, Université Grenoble Alpes (ComUE)

La réduction des dimensions des transistors a augmenté la sensibilité des circuits numériques aux variations PVT et, plus récemment, aux effets de vieillissement, notamment BTI(more)

Subjects/Keywords: Fiabilité des circuits numériques; Vieillissement; Bti; Hci; Pvt; Architectures adaptative; Digital circuit reliability; Aging; Bti; Hci; Pvt; Adaptive architecture; 620

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APA (6th Edition):

Altieri scarpato, M. (2017). Estimation de la performance des circuits numériques sous variations PVT et vieillissement : Digital circuit performance estimation under PVT and aging effects. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2017GREAT093

Chicago Manual of Style (16th Edition):

Altieri scarpato, Mauricio. “Estimation de la performance des circuits numériques sous variations PVT et vieillissement : Digital circuit performance estimation under PVT and aging effects.” 2017. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed September 29, 2020. http://www.theses.fr/2017GREAT093.

MLA Handbook (7th Edition):

Altieri scarpato, Mauricio. “Estimation de la performance des circuits numériques sous variations PVT et vieillissement : Digital circuit performance estimation under PVT and aging effects.” 2017. Web. 29 Sep 2020.

Vancouver:

Altieri scarpato M. Estimation de la performance des circuits numériques sous variations PVT et vieillissement : Digital circuit performance estimation under PVT and aging effects. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2017. [cited 2020 Sep 29]. Available from: http://www.theses.fr/2017GREAT093.

Council of Science Editors:

Altieri scarpato M. Estimation de la performance des circuits numériques sous variations PVT et vieillissement : Digital circuit performance estimation under PVT and aging effects. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2017. Available from: http://www.theses.fr/2017GREAT093


Universidade do Rio Grande do Sul

6. Camargo, Vinícius Valduga de Almeida. Evaluating the impact of charge traps on MOSFETs and ciruits.

Degree: 2016, Universidade do Rio Grande do Sul

Nesta tese são apresentados estudos do impacto de armadilhas no desempenho elétrico de MOSFETs em nível de circuito e um simulador Ensamble Monte Carlo (EMC)… (more)

Subjects/Keywords: Traps; Microeletrônica; Cmos; RTS; BTI; Ensemble Monte Carlo; TCAD; Circuit simulations

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APA (6th Edition):

Camargo, V. V. d. A. (2016). Evaluating the impact of charge traps on MOSFETs and ciruits. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/150857

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Camargo, Vinícius Valduga de Almeida. “Evaluating the impact of charge traps on MOSFETs and ciruits.” 2016. Thesis, Universidade do Rio Grande do Sul. Accessed September 29, 2020. http://hdl.handle.net/10183/150857.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Camargo, Vinícius Valduga de Almeida. “Evaluating the impact of charge traps on MOSFETs and ciruits.” 2016. Web. 29 Sep 2020.

Vancouver:

Camargo VVdA. Evaluating the impact of charge traps on MOSFETs and ciruits. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2016. [cited 2020 Sep 29]. Available from: http://hdl.handle.net/10183/150857.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Camargo VVdA. Evaluating the impact of charge traps on MOSFETs and ciruits. [Thesis]. Universidade do Rio Grande do Sul; 2016. Available from: http://hdl.handle.net/10183/150857

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

7. Vanessa Gomes da Silva, Éllyda. Uso de ovitrampas como instrumento para o monitoramento populacional de Aedes aegypti (Diptera:Culicidae) em áreas urbanas de Olinda .

Degree: 2009, Universidade Federal de Pernambuco

 Este estudo avaliou a efetividade do monitoramento populacional de Aedes aegypti por armadilhas de oviposição (ovitrampa), em Olinda-PE, e propôs um sistema alternativo para estimativa… (more)

Subjects/Keywords: Aedes; Monitoramento; Ovitrampa; Bti; Sistema alternativo; Contagem de ovos.

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APA (6th Edition):

Vanessa Gomes da Silva, . (2009). Uso de ovitrampas como instrumento para o monitoramento populacional de Aedes aegypti (Diptera:Culicidae) em áreas urbanas de Olinda . (Thesis). Universidade Federal de Pernambuco. Retrieved from http://repositorio.ufpe.br/handle/123456789/1067

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Vanessa Gomes da Silva, Éllyda. “Uso de ovitrampas como instrumento para o monitoramento populacional de Aedes aegypti (Diptera:Culicidae) em áreas urbanas de Olinda .” 2009. Thesis, Universidade Federal de Pernambuco. Accessed September 29, 2020. http://repositorio.ufpe.br/handle/123456789/1067.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Vanessa Gomes da Silva, Éllyda. “Uso de ovitrampas como instrumento para o monitoramento populacional de Aedes aegypti (Diptera:Culicidae) em áreas urbanas de Olinda .” 2009. Web. 29 Sep 2020.

Vancouver:

Vanessa Gomes da Silva . Uso de ovitrampas como instrumento para o monitoramento populacional de Aedes aegypti (Diptera:Culicidae) em áreas urbanas de Olinda . [Internet] [Thesis]. Universidade Federal de Pernambuco; 2009. [cited 2020 Sep 29]. Available from: http://repositorio.ufpe.br/handle/123456789/1067.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vanessa Gomes da Silva . Uso de ovitrampas como instrumento para o monitoramento populacional de Aedes aegypti (Diptera:Culicidae) em áreas urbanas de Olinda . [Thesis]. Universidade Federal de Pernambuco; 2009. Available from: http://repositorio.ufpe.br/handle/123456789/1067

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of New South Wales

8. Yauwenas, Yendrew. Numerical Simulation of Blade-Tower Interaction Noise.

Degree: Mechanical & Manufacturing Engineering, 2017, University of New South Wales

 Blade-tower interaction (BTI) is the interaction that occurs each time a rotor blade passes its support structure, causing transient changes to the induced flow and… (more)

Subjects/Keywords: wind turbine noise; bti; blade-tower interaction; curle's analogy

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APA (6th Edition):

Yauwenas, Y. (2017). Numerical Simulation of Blade-Tower Interaction Noise. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/58666 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:46584/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Yauwenas, Yendrew. “Numerical Simulation of Blade-Tower Interaction Noise.” 2017. Doctoral Dissertation, University of New South Wales. Accessed September 29, 2020. http://handle.unsw.edu.au/1959.4/58666 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:46584/SOURCE02?view=true.

MLA Handbook (7th Edition):

Yauwenas, Yendrew. “Numerical Simulation of Blade-Tower Interaction Noise.” 2017. Web. 29 Sep 2020.

Vancouver:

Yauwenas Y. Numerical Simulation of Blade-Tower Interaction Noise. [Internet] [Doctoral dissertation]. University of New South Wales; 2017. [cited 2020 Sep 29]. Available from: http://handle.unsw.edu.au/1959.4/58666 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:46584/SOURCE02?view=true.

Council of Science Editors:

Yauwenas Y. Numerical Simulation of Blade-Tower Interaction Noise. [Doctoral Dissertation]. University of New South Wales; 2017. Available from: http://handle.unsw.edu.au/1959.4/58666 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:46584/SOURCE02?view=true

9. Saliva, Marine. Circuits dédiés à l'étude des mécanismes de vieillissement dans les technologies CMOS avancées : conception et mesures : Dedicated circuits to aging mechanisms study in advanced CMOS technology nodes : design and mesurements.

Degree: Docteur es, Mécanique, physique, micro et nanoélectronique, 2015, Aix Marseille Université

Dans la chaine de développement des circuits, une attention particulière doit être portée sur le comportement en fiabilité des dispositifs MOS comme briques de base… (more)

Subjects/Keywords: Fdsoi; Bti; Hci; Tddb; Claquage soft; Moniteurs in-Situ; Abb; Circuits digitaux; Fdsoi; Bti; Hci; Tddb; Soft Breakdown; In situ monitors; Abb; Digital Circuits

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APA (6th Edition):

Saliva, M. (2015). Circuits dédiés à l'étude des mécanismes de vieillissement dans les technologies CMOS avancées : conception et mesures : Dedicated circuits to aging mechanisms study in advanced CMOS technology nodes : design and mesurements. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2015AIXM4337

Chicago Manual of Style (16th Edition):

Saliva, Marine. “Circuits dédiés à l'étude des mécanismes de vieillissement dans les technologies CMOS avancées : conception et mesures : Dedicated circuits to aging mechanisms study in advanced CMOS technology nodes : design and mesurements.” 2015. Doctoral Dissertation, Aix Marseille Université. Accessed September 29, 2020. http://www.theses.fr/2015AIXM4337.

MLA Handbook (7th Edition):

Saliva, Marine. “Circuits dédiés à l'étude des mécanismes de vieillissement dans les technologies CMOS avancées : conception et mesures : Dedicated circuits to aging mechanisms study in advanced CMOS technology nodes : design and mesurements.” 2015. Web. 29 Sep 2020.

Vancouver:

Saliva M. Circuits dédiés à l'étude des mécanismes de vieillissement dans les technologies CMOS avancées : conception et mesures : Dedicated circuits to aging mechanisms study in advanced CMOS technology nodes : design and mesurements. [Internet] [Doctoral dissertation]. Aix Marseille Université 2015. [cited 2020 Sep 29]. Available from: http://www.theses.fr/2015AIXM4337.

Council of Science Editors:

Saliva M. Circuits dédiés à l'étude des mécanismes de vieillissement dans les technologies CMOS avancées : conception et mesures : Dedicated circuits to aging mechanisms study in advanced CMOS technology nodes : design and mesurements. [Doctoral Dissertation]. Aix Marseille Université 2015. Available from: http://www.theses.fr/2015AIXM4337

10. Arfaoui, Wafa. Fiabilité Porteurs Chauds (HCI) des transistors FDSOI 28nm High-K grille métal : HCI reliability of FDSOI HKMG transistors in sub-28nm technologies.

Degree: Docteur es, Micro et Nanoélectronique, 2015, Aix Marseille Université

Au sein de la course industrielle à la miniaturisation et avec l’augmentation des exigences technologiques visant à obtenir plus de performances sur moins de surface,… (more)

Subjects/Keywords: Fiabilité; Mosfet; Dégradation par porteurs chauds (HCI); Corrélation; Interaction; Variation process; Modélisation HCI; Relaxation; Bti; Reliability; Mosfet; Hot carrier degradation (HCI); Correlation; Interaction; Process variation; HC modeling; Relaxation; Bti

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APA (6th Edition):

Arfaoui, W. (2015). Fiabilité Porteurs Chauds (HCI) des transistors FDSOI 28nm High-K grille métal : HCI reliability of FDSOI HKMG transistors in sub-28nm technologies. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2015AIXM4335

Chicago Manual of Style (16th Edition):

Arfaoui, Wafa. “Fiabilité Porteurs Chauds (HCI) des transistors FDSOI 28nm High-K grille métal : HCI reliability of FDSOI HKMG transistors in sub-28nm technologies.” 2015. Doctoral Dissertation, Aix Marseille Université. Accessed September 29, 2020. http://www.theses.fr/2015AIXM4335.

MLA Handbook (7th Edition):

Arfaoui, Wafa. “Fiabilité Porteurs Chauds (HCI) des transistors FDSOI 28nm High-K grille métal : HCI reliability of FDSOI HKMG transistors in sub-28nm technologies.” 2015. Web. 29 Sep 2020.

Vancouver:

Arfaoui W. Fiabilité Porteurs Chauds (HCI) des transistors FDSOI 28nm High-K grille métal : HCI reliability of FDSOI HKMG transistors in sub-28nm technologies. [Internet] [Doctoral dissertation]. Aix Marseille Université 2015. [cited 2020 Sep 29]. Available from: http://www.theses.fr/2015AIXM4335.

Council of Science Editors:

Arfaoui W. Fiabilité Porteurs Chauds (HCI) des transistors FDSOI 28nm High-K grille métal : HCI reliability of FDSOI HKMG transistors in sub-28nm technologies. [Doctoral Dissertation]. Aix Marseille Université 2015. Available from: http://www.theses.fr/2015AIXM4335


University of Georgia

11. Iburg, Joseph Paul. Environmental factors that affect the susceptibility of Simulium vitattum larvae to insecticidal proteins produced by Bacillus thuringiensis subsp. israelensis.

Degree: 2014, University of Georgia

 Application of insecticidal crystalline proteins (ICPs) produced by Bacillus thuringiensis subsp. israelensis (Bti) to the larval habitats is the method of choice for black fly… (more)

Subjects/Keywords: Black Fly; Simulium vittatum; Seston; Feeding; Bti; Biological Larvicide; Antibiotics; Toxicity; Mortality

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APA (6th Edition):

Iburg, J. P. (2014). Environmental factors that affect the susceptibility of Simulium vitattum larvae to insecticidal proteins produced by Bacillus thuringiensis subsp. israelensis. (Thesis). University of Georgia. Retrieved from http://hdl.handle.net/10724/30483

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Iburg, Joseph Paul. “Environmental factors that affect the susceptibility of Simulium vitattum larvae to insecticidal proteins produced by Bacillus thuringiensis subsp. israelensis.” 2014. Thesis, University of Georgia. Accessed September 29, 2020. http://hdl.handle.net/10724/30483.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Iburg, Joseph Paul. “Environmental factors that affect the susceptibility of Simulium vitattum larvae to insecticidal proteins produced by Bacillus thuringiensis subsp. israelensis.” 2014. Web. 29 Sep 2020.

Vancouver:

Iburg JP. Environmental factors that affect the susceptibility of Simulium vitattum larvae to insecticidal proteins produced by Bacillus thuringiensis subsp. israelensis. [Internet] [Thesis]. University of Georgia; 2014. [cited 2020 Sep 29]. Available from: http://hdl.handle.net/10724/30483.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Iburg JP. Environmental factors that affect the susceptibility of Simulium vitattum larvae to insecticidal proteins produced by Bacillus thuringiensis subsp. israelensis. [Thesis]. University of Georgia; 2014. Available from: http://hdl.handle.net/10724/30483

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Purdue University

12. Hassan, Khaled, MD. Statistical modeling and simulation of variability and reliability of CMOS technology.

Degree: PhD, Electrical and Computer Engineering, 2016, Purdue University

  The introduction of High-κ Metal Gate transistors led to higher integration density, low leakage current, and faster switching speed. However, this transition in technology… (more)

Subjects/Keywords: Applied sciences; BTI; High-k; RDF; Reliability; SILC; Tddb; Electrical and Computer Engineering

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APA (6th Edition):

Hassan, Khaled, M. (2016). Statistical modeling and simulation of variability and reliability of CMOS technology. (Doctoral Dissertation). Purdue University. Retrieved from https://docs.lib.purdue.edu/open_access_dissertations/932

Chicago Manual of Style (16th Edition):

Hassan, Khaled, MD. “Statistical modeling and simulation of variability and reliability of CMOS technology.” 2016. Doctoral Dissertation, Purdue University. Accessed September 29, 2020. https://docs.lib.purdue.edu/open_access_dissertations/932.

MLA Handbook (7th Edition):

Hassan, Khaled, MD. “Statistical modeling and simulation of variability and reliability of CMOS technology.” 2016. Web. 29 Sep 2020.

Vancouver:

Hassan, Khaled M. Statistical modeling and simulation of variability and reliability of CMOS technology. [Internet] [Doctoral dissertation]. Purdue University; 2016. [cited 2020 Sep 29]. Available from: https://docs.lib.purdue.edu/open_access_dissertations/932.

Council of Science Editors:

Hassan, Khaled M. Statistical modeling and simulation of variability and reliability of CMOS technology. [Doctoral Dissertation]. Purdue University; 2016. Available from: https://docs.lib.purdue.edu/open_access_dissertations/932

13. Subirats, Alexandre. Caractérisation et modélisation de la fiabilité relative au piégeage dans des transistors décananométriques et des mémoires SRAM en technologie FDSOI : Characterization and modelling of the reliability due to carrier trapping in decananometer transistors and SRAM memory fabricated in FDSOI technology.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Université Grenoble Alpes (ComUE)

L’industrie microélectronique arrive aujourd’hui à concevoir des transistors atteignant quelquesdizaines de nanomètres. A de telles dimensions, les problématiques de fiabilité et de variabilité des dispositifsprennent… (more)

Subjects/Keywords: Microélectronique; FDSOI; Variabilité; BTI; Caractérisation électrique; Modélisation; Microelectronic; FDSOI; Variability; Electrical characterization; Modelling; 620

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Subirats, A. (2015). Caractérisation et modélisation de la fiabilité relative au piégeage dans des transistors décananométriques et des mémoires SRAM en technologie FDSOI : Characterization and modelling of the reliability due to carrier trapping in decananometer transistors and SRAM memory fabricated in FDSOI technology. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2015GREAT003

Chicago Manual of Style (16th Edition):

Subirats, Alexandre. “Caractérisation et modélisation de la fiabilité relative au piégeage dans des transistors décananométriques et des mémoires SRAM en technologie FDSOI : Characterization and modelling of the reliability due to carrier trapping in decananometer transistors and SRAM memory fabricated in FDSOI technology.” 2015. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed September 29, 2020. http://www.theses.fr/2015GREAT003.

MLA Handbook (7th Edition):

Subirats, Alexandre. “Caractérisation et modélisation de la fiabilité relative au piégeage dans des transistors décananométriques et des mémoires SRAM en technologie FDSOI : Characterization and modelling of the reliability due to carrier trapping in decananometer transistors and SRAM memory fabricated in FDSOI technology.” 2015. Web. 29 Sep 2020.

Vancouver:

Subirats A. Caractérisation et modélisation de la fiabilité relative au piégeage dans des transistors décananométriques et des mémoires SRAM en technologie FDSOI : Characterization and modelling of the reliability due to carrier trapping in decananometer transistors and SRAM memory fabricated in FDSOI technology. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2015. [cited 2020 Sep 29]. Available from: http://www.theses.fr/2015GREAT003.

Council of Science Editors:

Subirats A. Caractérisation et modélisation de la fiabilité relative au piégeage dans des transistors décananométriques et des mémoires SRAM en technologie FDSOI : Characterization and modelling of the reliability due to carrier trapping in decananometer transistors and SRAM memory fabricated in FDSOI technology. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2015. Available from: http://www.theses.fr/2015GREAT003

14. Tsiara, Artemisia. Electrical characterization & modeling of the trapping phenomena impacting the reliability of nanowire transistors for sub 10nm nodes : Caractérisations électriques et modélisation des phénomènes de piégeages affectant la fiabilité des technologies CMOS avancées (Nanofils) 10nm.

Degree: Docteur es, Nano electronique et nano technologies, 2019, Université Grenoble Alpes (ComUE)

Dans les technologies CMOS avancées, les défauts microscopiques localisées à l'interface Si (Nit) ou dans l'oxyde de grille (Nox) dégradent les performances des transistors CMOS,… (more)

Subjects/Keywords: Nanofils; Bruit; Piégeages; CMOS avancés; Nanowires; Bti; Rtn; Traps; Advanced CMOS; 620

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tsiara, A. (2019). Electrical characterization & modeling of the trapping phenomena impacting the reliability of nanowire transistors for sub 10nm nodes : Caractérisations électriques et modélisation des phénomènes de piégeages affectant la fiabilité des technologies CMOS avancées (Nanofils) 10nm. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2019GREAT010

Chicago Manual of Style (16th Edition):

Tsiara, Artemisia. “Electrical characterization & modeling of the trapping phenomena impacting the reliability of nanowire transistors for sub 10nm nodes : Caractérisations électriques et modélisation des phénomènes de piégeages affectant la fiabilité des technologies CMOS avancées (Nanofils) 10nm.” 2019. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed September 29, 2020. http://www.theses.fr/2019GREAT010.

MLA Handbook (7th Edition):

Tsiara, Artemisia. “Electrical characterization & modeling of the trapping phenomena impacting the reliability of nanowire transistors for sub 10nm nodes : Caractérisations électriques et modélisation des phénomènes de piégeages affectant la fiabilité des technologies CMOS avancées (Nanofils) 10nm.” 2019. Web. 29 Sep 2020.

Vancouver:

Tsiara A. Electrical characterization & modeling of the trapping phenomena impacting the reliability of nanowire transistors for sub 10nm nodes : Caractérisations électriques et modélisation des phénomènes de piégeages affectant la fiabilité des technologies CMOS avancées (Nanofils) 10nm. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2019. [cited 2020 Sep 29]. Available from: http://www.theses.fr/2019GREAT010.

Council of Science Editors:

Tsiara A. Electrical characterization & modeling of the trapping phenomena impacting the reliability of nanowire transistors for sub 10nm nodes : Caractérisations électriques et modélisation des phénomènes de piégeages affectant la fiabilité des technologies CMOS avancées (Nanofils) 10nm. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2019. Available from: http://www.theses.fr/2019GREAT010


University of Georgia

15. Bayyareddy, Krishnareddy. Proteomic and biochemical characterization of Bacillus thuringiensis toxin Cry4Ba interaction with midgut proteins from Aedes (Stegomyia) aegypti larvae.

Degree: 2014, University of Georgia

 Cry4Ba toxin derived from Bacillus thuringiensis israelensis (Bti) is highly toxic to larval stages of the yellow fever mosquito Aedes aegypti, a vector for disease… (more)

Subjects/Keywords: Bacillus thuringiensis israelensis (Bti); Cry4Ba; BBMV; Aedes aegypti; Flotillin; proteomics; Lipid rafts/DRMs; mass spectrometry

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APA (6th Edition):

Bayyareddy, K. (2014). Proteomic and biochemical characterization of Bacillus thuringiensis toxin Cry4Ba interaction with midgut proteins from Aedes (Stegomyia) aegypti larvae. (Thesis). University of Georgia. Retrieved from http://hdl.handle.net/10724/27384

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bayyareddy, Krishnareddy. “Proteomic and biochemical characterization of Bacillus thuringiensis toxin Cry4Ba interaction with midgut proteins from Aedes (Stegomyia) aegypti larvae.” 2014. Thesis, University of Georgia. Accessed September 29, 2020. http://hdl.handle.net/10724/27384.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bayyareddy, Krishnareddy. “Proteomic and biochemical characterization of Bacillus thuringiensis toxin Cry4Ba interaction with midgut proteins from Aedes (Stegomyia) aegypti larvae.” 2014. Web. 29 Sep 2020.

Vancouver:

Bayyareddy K. Proteomic and biochemical characterization of Bacillus thuringiensis toxin Cry4Ba interaction with midgut proteins from Aedes (Stegomyia) aegypti larvae. [Internet] [Thesis]. University of Georgia; 2014. [cited 2020 Sep 29]. Available from: http://hdl.handle.net/10724/27384.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bayyareddy K. Proteomic and biochemical characterization of Bacillus thuringiensis toxin Cry4Ba interaction with midgut proteins from Aedes (Stegomyia) aegypti larvae. [Thesis]. University of Georgia; 2014. Available from: http://hdl.handle.net/10724/27384

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Stellenbosch University

16. De Klerk, Marissa. A psychometric evaluation of the measurement invariance and measurement equivalence of the basic traits inventory (BTI).

Degree: MCom, Industrial Psychology, 2019, Stellenbosch University

 ENGLISH SUMMARY : The main objective of an organisation is to generate profit through the products and services it delivers to the market. Organisations can… (more)

Subjects/Keywords: Basic traits inventory (BTI)  – South Africa; Personality questionnaires  – Statistical methods  – South Africa; Errors-in-variables models; Measurement bias; Measurement invariance; UCTD

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

De Klerk, M. (2019). A psychometric evaluation of the measurement invariance and measurement equivalence of the basic traits inventory (BTI). (Thesis). Stellenbosch University. Retrieved from http://hdl.handle.net/10019.1/107317

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

De Klerk, Marissa. “A psychometric evaluation of the measurement invariance and measurement equivalence of the basic traits inventory (BTI).” 2019. Thesis, Stellenbosch University. Accessed September 29, 2020. http://hdl.handle.net/10019.1/107317.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

De Klerk, Marissa. “A psychometric evaluation of the measurement invariance and measurement equivalence of the basic traits inventory (BTI).” 2019. Web. 29 Sep 2020.

Vancouver:

De Klerk M. A psychometric evaluation of the measurement invariance and measurement equivalence of the basic traits inventory (BTI). [Internet] [Thesis]. Stellenbosch University; 2019. [cited 2020 Sep 29]. Available from: http://hdl.handle.net/10019.1/107317.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

De Klerk M. A psychometric evaluation of the measurement invariance and measurement equivalence of the basic traits inventory (BTI). [Thesis]. Stellenbosch University; 2019. Available from: http://hdl.handle.net/10019.1/107317

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universidade do Rio Grande do Sul

17. Silva, Maurício Banaszeski da. Circuito on-chip para a caracterização em alta escala do efeito de Bias Temperature Instability.

Degree: 2016, Universidade do Rio Grande do Sul

O trabalho propõe um circuito para caracterização estatística do fenômeno Bias Temperature Instability (BTI). O circuito tem como base uma matriz de transistores para caracterização… (more)

Subjects/Keywords: Microeletrônica; Bias temperature instability (BTI); Large-scale characterization; Circuitos integrados; Deeply scaled transistors; Reliability; Performance degradation (Aging)

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APA (6th Edition):

Silva, M. B. d. (2016). Circuito on-chip para a caracterização em alta escala do efeito de Bias Temperature Instability. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/147989

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Silva, Maurício Banaszeski da. “Circuito on-chip para a caracterização em alta escala do efeito de Bias Temperature Instability.” 2016. Thesis, Universidade do Rio Grande do Sul. Accessed September 29, 2020. http://hdl.handle.net/10183/147989.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Silva, Maurício Banaszeski da. “Circuito on-chip para a caracterização em alta escala do efeito de Bias Temperature Instability.” 2016. Web. 29 Sep 2020.

Vancouver:

Silva MBd. Circuito on-chip para a caracterização em alta escala do efeito de Bias Temperature Instability. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2016. [cited 2020 Sep 29]. Available from: http://hdl.handle.net/10183/147989.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Silva MBd. Circuito on-chip para a caracterização em alta escala do efeito de Bias Temperature Instability. [Thesis]. Universidade do Rio Grande do Sul; 2016. Available from: http://hdl.handle.net/10183/147989

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

18. Eliane Bezerra de Mélo, Maria. Investigação da genotoxidade de larvicidas biológicos e sintéticos utilizados para controle de Aedes aegypti .

Degree: 2009, Universidade Federal de Pernambuco

 A dengue é atualmente considerada a mais importante arbovirose que afeta o homem. O agravamento desta situação epidemiológica tem acarretado um aumento expressivo no uso… (more)

Subjects/Keywords: Organofosforado; Temefós; Bacillus thuringiensis sorovar israelenses (Bti); Teste de micronúcleo; Teste de metáfase, Aberração cromossômica; Micronúcleo; Genotóxico

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APA (6th Edition):

Eliane Bezerra de Mélo, M. (2009). Investigação da genotoxidade de larvicidas biológicos e sintéticos utilizados para controle de Aedes aegypti . (Thesis). Universidade Federal de Pernambuco. Retrieved from http://repositorio.ufpe.br/handle/123456789/3033

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Eliane Bezerra de Mélo, Maria. “Investigação da genotoxidade de larvicidas biológicos e sintéticos utilizados para controle de Aedes aegypti .” 2009. Thesis, Universidade Federal de Pernambuco. Accessed September 29, 2020. http://repositorio.ufpe.br/handle/123456789/3033.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Eliane Bezerra de Mélo, Maria. “Investigação da genotoxidade de larvicidas biológicos e sintéticos utilizados para controle de Aedes aegypti .” 2009. Web. 29 Sep 2020.

Vancouver:

Eliane Bezerra de Mélo M. Investigação da genotoxidade de larvicidas biológicos e sintéticos utilizados para controle de Aedes aegypti . [Internet] [Thesis]. Universidade Federal de Pernambuco; 2009. [cited 2020 Sep 29]. Available from: http://repositorio.ufpe.br/handle/123456789/3033.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Eliane Bezerra de Mélo M. Investigação da genotoxidade de larvicidas biológicos e sintéticos utilizados para controle de Aedes aegypti . [Thesis]. Universidade Federal de Pernambuco; 2009. Available from: http://repositorio.ufpe.br/handle/123456789/3033

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

19. Ahmed, Fahad. Invasive and non-invasive detection of bias temperature instability.

Degree: PhD, Electrical and Computer Engineering, 2014, Georgia Tech

 Invasive and non-invasive methods of BTI monitoring and wearout preemption have been proposed. We propose a novel, simple to use, test structure for NBTI /PBTI… (more)

Subjects/Keywords: Wearout; BTI; NBTI; PBTI; Compiler; Monitor; Sensor

…59 FIGURE 37: TEST CHIP LAYOUT FOR BTI MONITORING… …67 FIGURE 41: TEST CHIP FOR BTI MONITORING… …79 viii SUMMARY Invasive and non-invasive methods of BTI monitoring and wearout… …circuitry to functional block, a non-invasive scheme for BTI monitoring is presented for sleep… …transistor based logic families. Since, BTI is a critical issue for memories, a scheme for BTI… 

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APA (6th Edition):

Ahmed, F. (2014). Invasive and non-invasive detection of bias temperature instability. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/52227

Chicago Manual of Style (16th Edition):

Ahmed, Fahad. “Invasive and non-invasive detection of bias temperature instability.” 2014. Doctoral Dissertation, Georgia Tech. Accessed September 29, 2020. http://hdl.handle.net/1853/52227.

MLA Handbook (7th Edition):

Ahmed, Fahad. “Invasive and non-invasive detection of bias temperature instability.” 2014. Web. 29 Sep 2020.

Vancouver:

Ahmed F. Invasive and non-invasive detection of bias temperature instability. [Internet] [Doctoral dissertation]. Georgia Tech; 2014. [cited 2020 Sep 29]. Available from: http://hdl.handle.net/1853/52227.

Council of Science Editors:

Ahmed F. Invasive and non-invasive detection of bias temperature instability. [Doctoral Dissertation]. Georgia Tech; 2014. Available from: http://hdl.handle.net/1853/52227

20. Ndiaye, Cheikh. Etude de la fiabilité de type negative bias temperature instability (NBTI) et par porteurs chauds (HC) dans les filières CMOS 28nm et 14nm FDSOI : Study of negative-bias temperature instability (NBTI) and under hot-carriers (HC) in 28nm and 14nm FDSOI CMOS nodes.

Degree: Docteur es, Sciences pour l'ingénieur: mécanique, physique, micro et nanoélectronique, 2017, Aix Marseille Université

L’avantage de cette architecture FDSOI par rapport à l’architecture Si-bulk est qu’elle possède une face arrière qui peut être utilisée comme une deuxième grille permettant… (more)

Subjects/Keywords: Fiabilité; Mosfet; Dégradation par porteurs chauds (HCI); Oscillateurs en anneau; Layout; Process; Modélisation HCI; Relaxation; Bti; Fdsoi; Reliability; Mosfet; Hot carrier degradation (HC); Negative Bias Temperature; Layout; Ring Oscillator; Compensation; Relaxation; Bti

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ndiaye, C. (2017). Etude de la fiabilité de type negative bias temperature instability (NBTI) et par porteurs chauds (HC) dans les filières CMOS 28nm et 14nm FDSOI : Study of negative-bias temperature instability (NBTI) and under hot-carriers (HC) in 28nm and 14nm FDSOI CMOS nodes. (Doctoral Dissertation). Aix Marseille Université. Retrieved from http://www.theses.fr/2017AIXM0182

Chicago Manual of Style (16th Edition):

Ndiaye, Cheikh. “Etude de la fiabilité de type negative bias temperature instability (NBTI) et par porteurs chauds (HC) dans les filières CMOS 28nm et 14nm FDSOI : Study of negative-bias temperature instability (NBTI) and under hot-carriers (HC) in 28nm and 14nm FDSOI CMOS nodes.” 2017. Doctoral Dissertation, Aix Marseille Université. Accessed September 29, 2020. http://www.theses.fr/2017AIXM0182.

MLA Handbook (7th Edition):

Ndiaye, Cheikh. “Etude de la fiabilité de type negative bias temperature instability (NBTI) et par porteurs chauds (HC) dans les filières CMOS 28nm et 14nm FDSOI : Study of negative-bias temperature instability (NBTI) and under hot-carriers (HC) in 28nm and 14nm FDSOI CMOS nodes.” 2017. Web. 29 Sep 2020.

Vancouver:

Ndiaye C. Etude de la fiabilité de type negative bias temperature instability (NBTI) et par porteurs chauds (HC) dans les filières CMOS 28nm et 14nm FDSOI : Study of negative-bias temperature instability (NBTI) and under hot-carriers (HC) in 28nm and 14nm FDSOI CMOS nodes. [Internet] [Doctoral dissertation]. Aix Marseille Université 2017. [cited 2020 Sep 29]. Available from: http://www.theses.fr/2017AIXM0182.

Council of Science Editors:

Ndiaye C. Etude de la fiabilité de type negative bias temperature instability (NBTI) et par porteurs chauds (HC) dans les filières CMOS 28nm et 14nm FDSOI : Study of negative-bias temperature instability (NBTI) and under hot-carriers (HC) in 28nm and 14nm FDSOI CMOS nodes. [Doctoral Dissertation]. Aix Marseille Université 2017. Available from: http://www.theses.fr/2017AIXM0182

21. Yabuuchi, Michitarou. Study of Design Methodology of ASIC and FPGA Considering Correlation between Process Variation and BTI-Induced Degradation : プロセスばらつきとBTIによる劣化を考慮したASIC及びFPGA設計手法に関する研究.

Degree: 博士(工学), 2015, Kyoto Institute of Technology / 京都工芸繊維大学

 We widely use LSIs (Large Scale Integrations) for many industrial products such as computers, mobile devices, automobiles, and medical instruments. LSIs are infrastructures for our… (more)

Subjects/Keywords: Reliability; electronics; bias temperature instability; BTI; process variation; large scale integration; LSI; design; reliability-aware design; circuit; simulation; analysis; degradation; prediction; BTI-aware netlist; ASIC; FPGA; MOSFET; Atomistic Trap-Based Model; Reaction-Diffusion Model

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yabuuchi, M. (2015). Study of Design Methodology of ASIC and FPGA Considering Correlation between Process Variation and BTI-Induced Degradation : プロセスばらつきとBTIによる劣化を考慮したASIC及びFPGA設計手法に関する研究. (Thesis). Kyoto Institute of Technology / 京都工芸繊維大学. Retrieved from http://hdl.handle.net/10212/2260

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yabuuchi, Michitarou. “Study of Design Methodology of ASIC and FPGA Considering Correlation between Process Variation and BTI-Induced Degradation : プロセスばらつきとBTIによる劣化を考慮したASIC及びFPGA設計手法に関する研究.” 2015. Thesis, Kyoto Institute of Technology / 京都工芸繊維大学. Accessed September 29, 2020. http://hdl.handle.net/10212/2260.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yabuuchi, Michitarou. “Study of Design Methodology of ASIC and FPGA Considering Correlation between Process Variation and BTI-Induced Degradation : プロセスばらつきとBTIによる劣化を考慮したASIC及びFPGA設計手法に関する研究.” 2015. Web. 29 Sep 2020.

Vancouver:

Yabuuchi M. Study of Design Methodology of ASIC and FPGA Considering Correlation between Process Variation and BTI-Induced Degradation : プロセスばらつきとBTIによる劣化を考慮したASIC及びFPGA設計手法に関する研究. [Internet] [Thesis]. Kyoto Institute of Technology / 京都工芸繊維大学; 2015. [cited 2020 Sep 29]. Available from: http://hdl.handle.net/10212/2260.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yabuuchi M. Study of Design Methodology of ASIC and FPGA Considering Correlation between Process Variation and BTI-Induced Degradation : プロセスばらつきとBTIによる劣化を考慮したASIC及びFPGA設計手法に関する研究. [Thesis]. Kyoto Institute of Technology / 京都工芸繊維大学; 2015. Available from: http://hdl.handle.net/10212/2260

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Delft University of Technology

22. Agbo, I.O. Reliability Modeling and Mitigation for Embedded Memories.

Degree: 2018, Delft University of Technology

 Complementary Metallic Oxide Semiconductor (CMOS) technology scaling enhances the performance, transistor density, functionality, and reduces cost and power consumption. However, scaling causes significant reliability challenges… (more)

Subjects/Keywords: Memory reliability; Aging; Bias temperature instability (BTI); sense amplifier (SA)

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APA (6th Edition):

Agbo, I. O. (2018). Reliability Modeling and Mitigation for Embedded Memories. (Doctoral Dissertation). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; urn:NBN:nl:ui:24-uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; 10.4233/uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; urn:isbn:978-94-6366-053-2 ; urn:NBN:nl:ui:24-uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; http://resolver.tudelft.nl/uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430

Chicago Manual of Style (16th Edition):

Agbo, I O. “Reliability Modeling and Mitigation for Embedded Memories.” 2018. Doctoral Dissertation, Delft University of Technology. Accessed September 29, 2020. http://resolver.tudelft.nl/uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; urn:NBN:nl:ui:24-uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; 10.4233/uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; urn:isbn:978-94-6366-053-2 ; urn:NBN:nl:ui:24-uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; http://resolver.tudelft.nl/uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430.

MLA Handbook (7th Edition):

Agbo, I O. “Reliability Modeling and Mitigation for Embedded Memories.” 2018. Web. 29 Sep 2020.

Vancouver:

Agbo IO. Reliability Modeling and Mitigation for Embedded Memories. [Internet] [Doctoral dissertation]. Delft University of Technology; 2018. [cited 2020 Sep 29]. Available from: http://resolver.tudelft.nl/uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; urn:NBN:nl:ui:24-uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; 10.4233/uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; urn:isbn:978-94-6366-053-2 ; urn:NBN:nl:ui:24-uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; http://resolver.tudelft.nl/uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430.

Council of Science Editors:

Agbo IO. Reliability Modeling and Mitigation for Embedded Memories. [Doctoral Dissertation]. Delft University of Technology; 2018. Available from: http://resolver.tudelft.nl/uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; urn:NBN:nl:ui:24-uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; 10.4233/uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; urn:isbn:978-94-6366-053-2 ; urn:NBN:nl:ui:24-uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430 ; http://resolver.tudelft.nl/uuid:ce7b3290-9e0f-406b-93ee-7bfb7c9a8430


University of New South Wales

23. Zajamsek, Branko. Experimental investigation into airfoil self-noise, blade-tower interaction noise and wind farm noise character.

Degree: Mechanical & Manufacturing Engineering, 2017, University of New South Wales

 An experimental investigation into airfoil self-noise (trailing edge noise, tip vortex formation noise and bluntness trailing edge noise) and blade-tower interaction (BTI) noise from rotating… (more)

Subjects/Keywords: trailing edge noise; wind farm noise; airfoil self-noise; low-frequency noise; infrasound; blade-tower interaction noise; BTI; blade passage effect noise

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APA (6th Edition):

Zajamsek, B. (2017). Experimental investigation into airfoil self-noise, blade-tower interaction noise and wind farm noise character. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/57370 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43334/SOURCE02?view=true

Chicago Manual of Style (16th Edition):

Zajamsek, Branko. “Experimental investigation into airfoil self-noise, blade-tower interaction noise and wind farm noise character.” 2017. Doctoral Dissertation, University of New South Wales. Accessed September 29, 2020. http://handle.unsw.edu.au/1959.4/57370 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43334/SOURCE02?view=true.

MLA Handbook (7th Edition):

Zajamsek, Branko. “Experimental investigation into airfoil self-noise, blade-tower interaction noise and wind farm noise character.” 2017. Web. 29 Sep 2020.

Vancouver:

Zajamsek B. Experimental investigation into airfoil self-noise, blade-tower interaction noise and wind farm noise character. [Internet] [Doctoral dissertation]. University of New South Wales; 2017. [cited 2020 Sep 29]. Available from: http://handle.unsw.edu.au/1959.4/57370 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43334/SOURCE02?view=true.

Council of Science Editors:

Zajamsek B. Experimental investigation into airfoil self-noise, blade-tower interaction noise and wind farm noise character. [Doctoral Dissertation]. University of New South Wales; 2017. Available from: http://handle.unsw.edu.au/1959.4/57370 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43334/SOURCE02?view=true


Arizona State University

24. Fang, Runchen. Defect Induced Aging and Breakdown in High-k Dielectrics.

Degree: Electrical Engineering, 2018, Arizona State University

Subjects/Keywords: Electrical engineering; BTI; CMOS Reliability; Emerging Memory; High-k Dielectrics; Resistive Memory; TDDB

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APA (6th Edition):

Fang, R. (2018). Defect Induced Aging and Breakdown in High-k Dielectrics. (Doctoral Dissertation). Arizona State University. Retrieved from http://repository.asu.edu/items/49036

Chicago Manual of Style (16th Edition):

Fang, Runchen. “Defect Induced Aging and Breakdown in High-k Dielectrics.” 2018. Doctoral Dissertation, Arizona State University. Accessed September 29, 2020. http://repository.asu.edu/items/49036.

MLA Handbook (7th Edition):

Fang, Runchen. “Defect Induced Aging and Breakdown in High-k Dielectrics.” 2018. Web. 29 Sep 2020.

Vancouver:

Fang R. Defect Induced Aging and Breakdown in High-k Dielectrics. [Internet] [Doctoral dissertation]. Arizona State University; 2018. [cited 2020 Sep 29]. Available from: http://repository.asu.edu/items/49036.

Council of Science Editors:

Fang R. Defect Induced Aging and Breakdown in High-k Dielectrics. [Doctoral Dissertation]. Arizona State University; 2018. Available from: http://repository.asu.edu/items/49036

25. Lahbib, Insaf. Contribution à l'analyse des effets de vieillissement de composants actifs et de circuits intégrés sous contraintes DC et RF en vue d'une approche prédictive : Contribution to the analysis of aging effects of active components and integrated circuits under DC and RF constraints for a predictive approach.

Degree: Docteur es, Electronique, microelectronique, optique et lasers, optoelectronique microondes, 2017, Normandie

Les travaux de cette thèse portent sur la simulation de la dégradation des paramètres électriques des transistors MOS et bipolaires sous stress statiques et dynamiques.… (more)

Subjects/Keywords: Prédiction de la dégradation; Stress DC, Stress RF; Dégradation des paramètres DC et RF; Mécanismes de dégradation HCI, BTI, MMD et RVBE; TranEstimation de la durée de viesistors MOS et bipolaires; Conception en tenant compte de la fiabilité; Reliability simulation; Prediction of degradation under DC and RF stress; DC and RF parameters degradation; Degradation mechanisms HCI, BTI, MMD and RVBE in MOS and Bipolar transistors; MMD and RVBE in MOS and Bipolar transistors; Lifetime estimation; Transistor-level reliability; Circuit-level reliability; Design for reliability

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APA (6th Edition):

Lahbib, I. (2017). Contribution à l'analyse des effets de vieillissement de composants actifs et de circuits intégrés sous contraintes DC et RF en vue d'une approche prédictive : Contribution to the analysis of aging effects of active components and integrated circuits under DC and RF constraints for a predictive approach. (Doctoral Dissertation). Normandie. Retrieved from http://www.theses.fr/2017NORMC256

Chicago Manual of Style (16th Edition):

Lahbib, Insaf. “Contribution à l'analyse des effets de vieillissement de composants actifs et de circuits intégrés sous contraintes DC et RF en vue d'une approche prédictive : Contribution to the analysis of aging effects of active components and integrated circuits under DC and RF constraints for a predictive approach.” 2017. Doctoral Dissertation, Normandie. Accessed September 29, 2020. http://www.theses.fr/2017NORMC256.

MLA Handbook (7th Edition):

Lahbib, Insaf. “Contribution à l'analyse des effets de vieillissement de composants actifs et de circuits intégrés sous contraintes DC et RF en vue d'une approche prédictive : Contribution to the analysis of aging effects of active components and integrated circuits under DC and RF constraints for a predictive approach.” 2017. Web. 29 Sep 2020.

Vancouver:

Lahbib I. Contribution à l'analyse des effets de vieillissement de composants actifs et de circuits intégrés sous contraintes DC et RF en vue d'une approche prédictive : Contribution to the analysis of aging effects of active components and integrated circuits under DC and RF constraints for a predictive approach. [Internet] [Doctoral dissertation]. Normandie; 2017. [cited 2020 Sep 29]. Available from: http://www.theses.fr/2017NORMC256.

Council of Science Editors:

Lahbib I. Contribution à l'analyse des effets de vieillissement de composants actifs et de circuits intégrés sous contraintes DC et RF en vue d'une approche prédictive : Contribution to the analysis of aging effects of active components and integrated circuits under DC and RF constraints for a predictive approach. [Doctoral Dissertation]. Normandie; 2017. Available from: http://www.theses.fr/2017NORMC256


Uppsala University

26. Vähäkari, Antti. Simulering av översvämningar i Nedre Dalälven.

Degree: Earth Sciences, 2006, Uppsala University

Mosquitoes are found in extremely large numbers in the lower parts of the River Dalälven. In the year 2000 the mosquito nuisance was especially… (more)

Subjects/Keywords: Nedre Dalälven; flooding; flood water mosquitoes; BTI; hydraulic model; prediction of flooding.; Oceanography, Hydrology and Water Resources; Oceanografi, hydrologi och vattenresurser

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APA (6th Edition):

Vähäkari, A. (2006). Simulering av översvämningar i Nedre Dalälven. (Thesis). Uppsala University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-88858

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Vähäkari, Antti. “Simulering av översvämningar i Nedre Dalälven.” 2006. Thesis, Uppsala University. Accessed September 29, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-88858.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Vähäkari, Antti. “Simulering av översvämningar i Nedre Dalälven.” 2006. Web. 29 Sep 2020.

Vancouver:

Vähäkari A. Simulering av översvämningar i Nedre Dalälven. [Internet] [Thesis]. Uppsala University; 2006. [cited 2020 Sep 29]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-88858.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vähäkari A. Simulering av översvämningar i Nedre Dalälven. [Thesis]. Uppsala University; 2006. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-88858

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

27. Liu, Taizhi. Comprehensive variation-aware aging simulator for logic timing and SRAM stability.

Degree: PhD, Electrical and Computer Engineering, 2017, Georgia Tech

 This research developed a framework which analyzes circuit-level reliability and evaluates the lifetimes of complex systems like state-of-art microprocessors. The novelty of the proposed work… (more)

Subjects/Keywords: Microelectronics; Statistical timing analysis; SRAM stability; Data cache; Circuit aging; BTI; HCI; GOBD

…The lifetime distributions of the LEON3 microprocessor due to BTI, HCI, GOBD and the… …67 Figure 32 – The estimated lifetimes of the LEON3 microprocessor due to BTI for… …lifetimes of the RISC microprocessor due to BTI for different benchmarks and different system… …70 Figure 36 – The statistical lifetime distribution of the RISC microprocessor due to BTI… …the Vdd-minret, and the IREAD of a memory cell due to BTI, BTI and HCI, shown in (a… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Liu, T. (2017). Comprehensive variation-aware aging simulator for logic timing and SRAM stability. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/58287

Chicago Manual of Style (16th Edition):

Liu, Taizhi. “Comprehensive variation-aware aging simulator for logic timing and SRAM stability.” 2017. Doctoral Dissertation, Georgia Tech. Accessed September 29, 2020. http://hdl.handle.net/1853/58287.

MLA Handbook (7th Edition):

Liu, Taizhi. “Comprehensive variation-aware aging simulator for logic timing and SRAM stability.” 2017. Web. 29 Sep 2020.

Vancouver:

Liu T. Comprehensive variation-aware aging simulator for logic timing and SRAM stability. [Internet] [Doctoral dissertation]. Georgia Tech; 2017. [cited 2020 Sep 29]. Available from: http://hdl.handle.net/1853/58287.

Council of Science Editors:

Liu T. Comprehensive variation-aware aging simulator for logic timing and SRAM stability. [Doctoral Dissertation]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/58287

28. Awano, Hiromitsu. Variability in BTI-Induced Device Degradation: from Silicon Measurement to SRAM Yield Prediction : トランジスタのBTI劣化ばらつきに関する研究:特性評価からSRAM 回路歩留り予測へ.

Degree: 博士(情報学), 2016, Kyoto University / 京都大学

新制・課程博士

甲第19862号

情博第613号

Subjects/Keywords: 集積回路; 微細化; 信頼性; バイアス温度不安定性(BTI); 歩留り解析

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APA (6th Edition):

Awano, H. (2016). Variability in BTI-Induced Device Degradation: from Silicon Measurement to SRAM Yield Prediction : トランジスタのBTI劣化ばらつきに関する研究:特性評価からSRAM 回路歩留り予測へ. (Thesis). Kyoto University / 京都大学. Retrieved from http://hdl.handle.net/2433/215689 ; http://dx.doi.org/10.14989/doctor.k19862

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Awano, Hiromitsu. “Variability in BTI-Induced Device Degradation: from Silicon Measurement to SRAM Yield Prediction : トランジスタのBTI劣化ばらつきに関する研究:特性評価からSRAM 回路歩留り予測へ.” 2016. Thesis, Kyoto University / 京都大学. Accessed September 29, 2020. http://hdl.handle.net/2433/215689 ; http://dx.doi.org/10.14989/doctor.k19862.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Awano, Hiromitsu. “Variability in BTI-Induced Device Degradation: from Silicon Measurement to SRAM Yield Prediction : トランジスタのBTI劣化ばらつきに関する研究:特性評価からSRAM 回路歩留り予測へ.” 2016. Web. 29 Sep 2020.

Vancouver:

Awano H. Variability in BTI-Induced Device Degradation: from Silicon Measurement to SRAM Yield Prediction : トランジスタのBTI劣化ばらつきに関する研究:特性評価からSRAM 回路歩留り予測へ. [Internet] [Thesis]. Kyoto University / 京都大学; 2016. [cited 2020 Sep 29]. Available from: http://hdl.handle.net/2433/215689 ; http://dx.doi.org/10.14989/doctor.k19862.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Awano H. Variability in BTI-Induced Device Degradation: from Silicon Measurement to SRAM Yield Prediction : トランジスタのBTI劣化ばらつきに関する研究:特性評価からSRAM 回路歩留り予測へ. [Thesis]. Kyoto University / 京都大学; 2016. Available from: http://hdl.handle.net/2433/215689 ; http://dx.doi.org/10.14989/doctor.k19862

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

29. Awano, Hiromitsu. Variability in BTI-Induced Device Degradation: from Silicon Measurement to SRAM Yield Prediction .

Degree: 2016, Kyoto University

Subjects/Keywords: 集積回路; 微細化; 信頼性; バイアス温度不安定性(BTI); 歩留り解析

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Awano, H. (2016). Variability in BTI-Induced Device Degradation: from Silicon Measurement to SRAM Yield Prediction . (Thesis). Kyoto University. Retrieved from http://hdl.handle.net/2433/215689

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Awano, Hiromitsu. “Variability in BTI-Induced Device Degradation: from Silicon Measurement to SRAM Yield Prediction .” 2016. Thesis, Kyoto University. Accessed September 29, 2020. http://hdl.handle.net/2433/215689.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Awano, Hiromitsu. “Variability in BTI-Induced Device Degradation: from Silicon Measurement to SRAM Yield Prediction .” 2016. Web. 29 Sep 2020.

Vancouver:

Awano H. Variability in BTI-Induced Device Degradation: from Silicon Measurement to SRAM Yield Prediction . [Internet] [Thesis]. Kyoto University; 2016. [cited 2020 Sep 29]. Available from: http://hdl.handle.net/2433/215689.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Awano H. Variability in BTI-Induced Device Degradation: from Silicon Measurement to SRAM Yield Prediction . [Thesis]. Kyoto University; 2016. Available from: http://hdl.handle.net/2433/215689

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

30. Singh, Prashant. On-chip NBTI and Gate-Oxide-Degradation Sensing and Dynamic Management in VLSI Circuits.

Degree: PhD, Electrical Engineering, 2011, University of Michigan

 The VLSI industry has achieved advancement in technology by continuous process scaling which has resulted in large scale integration. However, scaling also poses new reliability… (more)

Subjects/Keywords: VLSI Circuit Reliability; Bias Temerature Instability (BTI); Gate-oxide Wear-out; Sensor; Dynamic Reliability Management; In Situ Sensing; Electrical Engineering; Engineering

…Instability (BTI) Sensing Technique and Dynamic BTI Management Implementation 78 6.1… …Dynamic BTI Management 93 6.6.Conclusion 7. 86 96 Summary and the Road Ahead 97 7.1… …7.2.4. In situ BTI Sensing 99 7.2.5. Mapping of Accelerated Stress Conditions to Nominal… …Inverter chain with leaking devices. 79 6.2 Header based methodology is used to detect BTI. 81… …matched. 84 6.5 A system with BTI measurement technique implemented. 86 6.6 Test-chip with… 

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Singh, P. (2011). On-chip NBTI and Gate-Oxide-Degradation Sensing and Dynamic Management in VLSI Circuits. (Doctoral Dissertation). University of Michigan. Retrieved from http://hdl.handle.net/2027.42/86281

Chicago Manual of Style (16th Edition):

Singh, Prashant. “On-chip NBTI and Gate-Oxide-Degradation Sensing and Dynamic Management in VLSI Circuits.” 2011. Doctoral Dissertation, University of Michigan. Accessed September 29, 2020. http://hdl.handle.net/2027.42/86281.

MLA Handbook (7th Edition):

Singh, Prashant. “On-chip NBTI and Gate-Oxide-Degradation Sensing and Dynamic Management in VLSI Circuits.” 2011. Web. 29 Sep 2020.

Vancouver:

Singh P. On-chip NBTI and Gate-Oxide-Degradation Sensing and Dynamic Management in VLSI Circuits. [Internet] [Doctoral dissertation]. University of Michigan; 2011. [cited 2020 Sep 29]. Available from: http://hdl.handle.net/2027.42/86281.

Council of Science Editors:

Singh P. On-chip NBTI and Gate-Oxide-Degradation Sensing and Dynamic Management in VLSI Circuits. [Doctoral Dissertation]. University of Michigan; 2011. Available from: http://hdl.handle.net/2027.42/86281

[1] [2]

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