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You searched for subject:(Amorphous semiconductors). Showing records 1 – 30 of 77 total matches.

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Oregon State University

1. Feller, Layannah Elizabeth. Zinc tin oxide thin-film transistor current mirror circuits.

Degree: MS, Electrical and Computer Engineering, 2011, Oregon State University

 The central focus of this thesis is the design, fabrication and characterization of amorphous oxide semiconductor (AOS) thin-film transistor (TFT) current mirrors. The thin-film deposition… (more)

Subjects/Keywords: amorphous oxide semiconductors; Amorphous semiconductors

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APA (6th Edition):

Feller, L. E. (2011). Zinc tin oxide thin-film transistor current mirror circuits. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/21742

Chicago Manual of Style (16th Edition):

Feller, Layannah Elizabeth. “Zinc tin oxide thin-film transistor current mirror circuits.” 2011. Masters Thesis, Oregon State University. Accessed November 11, 2019. http://hdl.handle.net/1957/21742.

MLA Handbook (7th Edition):

Feller, Layannah Elizabeth. “Zinc tin oxide thin-film transistor current mirror circuits.” 2011. Web. 11 Nov 2019.

Vancouver:

Feller LE. Zinc tin oxide thin-film transistor current mirror circuits. [Internet] [Masters thesis]. Oregon State University; 2011. [cited 2019 Nov 11]. Available from: http://hdl.handle.net/1957/21742.

Council of Science Editors:

Feller LE. Zinc tin oxide thin-film transistor current mirror circuits. [Masters Thesis]. Oregon State University; 2011. Available from: http://hdl.handle.net/1957/21742

2. Lee, Sunghwan. Amorphous IZO-based Thin Film Transistors: Native Defect-based Doping, Amorphous Phase Instabilities, Threshold Voltage Shifts, and Metallization Strategies.

Degree: PhD, Materials Science, 2013, Brown University

Amorphous oxide semiconductor (AOS) thin film transistors (TFTs) based on In2O3 have attracted much interest for use as pixel switching elements in next generation active-matrix… (more)

Subjects/Keywords: Amorphous oxide semiconductors

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APA (6th Edition):

Lee, S. (2013). Amorphous IZO-based Thin Film Transistors: Native Defect-based Doping, Amorphous Phase Instabilities, Threshold Voltage Shifts, and Metallization Strategies. (Doctoral Dissertation). Brown University. Retrieved from https://repository.library.brown.edu/studio/item/bdr:320542/

Chicago Manual of Style (16th Edition):

Lee, Sunghwan. “Amorphous IZO-based Thin Film Transistors: Native Defect-based Doping, Amorphous Phase Instabilities, Threshold Voltage Shifts, and Metallization Strategies.” 2013. Doctoral Dissertation, Brown University. Accessed November 11, 2019. https://repository.library.brown.edu/studio/item/bdr:320542/.

MLA Handbook (7th Edition):

Lee, Sunghwan. “Amorphous IZO-based Thin Film Transistors: Native Defect-based Doping, Amorphous Phase Instabilities, Threshold Voltage Shifts, and Metallization Strategies.” 2013. Web. 11 Nov 2019.

Vancouver:

Lee S. Amorphous IZO-based Thin Film Transistors: Native Defect-based Doping, Amorphous Phase Instabilities, Threshold Voltage Shifts, and Metallization Strategies. [Internet] [Doctoral dissertation]. Brown University; 2013. [cited 2019 Nov 11]. Available from: https://repository.library.brown.edu/studio/item/bdr:320542/.

Council of Science Editors:

Lee S. Amorphous IZO-based Thin Film Transistors: Native Defect-based Doping, Amorphous Phase Instabilities, Threshold Voltage Shifts, and Metallization Strategies. [Doctoral Dissertation]. Brown University; 2013. Available from: https://repository.library.brown.edu/studio/item/bdr:320542/


Michigan State University

3. Golden, Kelly Paul, 1943-. Properties of an amorphous chalcogenide semiconductory Ge₁₀As₂₀Te – ₀.

Degree: PhD, Department of Electrical Engineering and Systems Science, 1971, Michigan State University

Subjects/Keywords: Amorphous semiconductors

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APA (6th Edition):

Golden, Kelly Paul, 1. (1971). Properties of an amorphous chalcogenide semiconductory Ge₁₀As₂₀Te – ₀. (Doctoral Dissertation). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:40396

Chicago Manual of Style (16th Edition):

Golden, Kelly Paul, 1943-. “Properties of an amorphous chalcogenide semiconductory Ge₁₀As₂₀Te – ₀.” 1971. Doctoral Dissertation, Michigan State University. Accessed November 11, 2019. http://etd.lib.msu.edu/islandora/object/etd:40396.

MLA Handbook (7th Edition):

Golden, Kelly Paul, 1943-. “Properties of an amorphous chalcogenide semiconductory Ge₁₀As₂₀Te – ₀.” 1971. Web. 11 Nov 2019.

Vancouver:

Golden, Kelly Paul 1. Properties of an amorphous chalcogenide semiconductory Ge₁₀As₂₀Te – ₀. [Internet] [Doctoral dissertation]. Michigan State University; 1971. [cited 2019 Nov 11]. Available from: http://etd.lib.msu.edu/islandora/object/etd:40396.

Council of Science Editors:

Golden, Kelly Paul 1. Properties of an amorphous chalcogenide semiconductory Ge₁₀As₂₀Te – ₀. [Doctoral Dissertation]. Michigan State University; 1971. Available from: http://etd.lib.msu.edu/islandora/object/etd:40396


Oregon State University

4. McFarlane, Brian Ross. Amorphous oxide semiconductors in circuit applications.

Degree: MS, Electrical and Computer Engineering, 2008, Oregon State University

 The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits… (more)

Subjects/Keywords: amorphous oxide semiconductors; Thin film transistors

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APA (6th Edition):

McFarlane, B. R. (2008). Amorphous oxide semiconductors in circuit applications. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/9529

Chicago Manual of Style (16th Edition):

McFarlane, Brian Ross. “Amorphous oxide semiconductors in circuit applications.” 2008. Masters Thesis, Oregon State University. Accessed November 11, 2019. http://hdl.handle.net/1957/9529.

MLA Handbook (7th Edition):

McFarlane, Brian Ross. “Amorphous oxide semiconductors in circuit applications.” 2008. Web. 11 Nov 2019.

Vancouver:

McFarlane BR. Amorphous oxide semiconductors in circuit applications. [Internet] [Masters thesis]. Oregon State University; 2008. [cited 2019 Nov 11]. Available from: http://hdl.handle.net/1957/9529.

Council of Science Editors:

McFarlane BR. Amorphous oxide semiconductors in circuit applications. [Masters Thesis]. Oregon State University; 2008. Available from: http://hdl.handle.net/1957/9529


University of Florida

5. Ramirez, Jessica. Modifying the Opto-Electronic Properties of Crystalline and Amorphous Semi-Conducting Silicon Surfaces Via Absorptive Ag Functionalization.

Degree: 2010, University of Florida

 By taking advantage of the principles of photo-electrochemistry, semiconductor nanoclusters have been utilized for the conversion/storage of light (electromagnetic) radiation, making them favorable materials for… (more)

Subjects/Keywords: Amorphous materials; Electromagnetic absorption; Electromagnetism; Electronics; Light; Nanoclusters; Oscillator strengths; Photons; Semiconductors; Technology utilization; Amorphous semiconductors; Semiconductors; Silicon

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APA (6th Edition):

Ramirez, J. (2010). Modifying the Opto-Electronic Properties of Crystalline and Amorphous Semi-Conducting Silicon Surfaces Via Absorptive Ag Functionalization. (Thesis). University of Florida. Retrieved from http://ufdc.ufl.edu/AA00057179

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ramirez, Jessica. “Modifying the Opto-Electronic Properties of Crystalline and Amorphous Semi-Conducting Silicon Surfaces Via Absorptive Ag Functionalization.” 2010. Thesis, University of Florida. Accessed November 11, 2019. http://ufdc.ufl.edu/AA00057179.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ramirez, Jessica. “Modifying the Opto-Electronic Properties of Crystalline and Amorphous Semi-Conducting Silicon Surfaces Via Absorptive Ag Functionalization.” 2010. Web. 11 Nov 2019.

Vancouver:

Ramirez J. Modifying the Opto-Electronic Properties of Crystalline and Amorphous Semi-Conducting Silicon Surfaces Via Absorptive Ag Functionalization. [Internet] [Thesis]. University of Florida; 2010. [cited 2019 Nov 11]. Available from: http://ufdc.ufl.edu/AA00057179.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ramirez J. Modifying the Opto-Electronic Properties of Crystalline and Amorphous Semi-Conducting Silicon Surfaces Via Absorptive Ag Functionalization. [Thesis]. University of Florida; 2010. Available from: http://ufdc.ufl.edu/AA00057179

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Waterloo

6. Goldan, Amirhossein. Unipolar Charge-Sensing for Evaporated Large-Area Solid-State Photoconductors for Digital Radiography.

Degree: 2012, University of Waterloo

 An alternative approach to energy integrating systems is photon counting which provides higher dose efficiency through efficient noise rejection and optimal energy weighting, and, moreover,… (more)

Subjects/Keywords: Solid-State Detector; Radiation Detector; Medical Imaging; Disordered Solids; Non-Crystalline Semiconductors; Amorphous Semiconductors; Amorphous Selenium

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APA (6th Edition):

Goldan, A. (2012). Unipolar Charge-Sensing for Evaporated Large-Area Solid-State Photoconductors for Digital Radiography. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/6704

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Goldan, Amirhossein. “Unipolar Charge-Sensing for Evaporated Large-Area Solid-State Photoconductors for Digital Radiography.” 2012. Thesis, University of Waterloo. Accessed November 11, 2019. http://hdl.handle.net/10012/6704.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Goldan, Amirhossein. “Unipolar Charge-Sensing for Evaporated Large-Area Solid-State Photoconductors for Digital Radiography.” 2012. Web. 11 Nov 2019.

Vancouver:

Goldan A. Unipolar Charge-Sensing for Evaporated Large-Area Solid-State Photoconductors for Digital Radiography. [Internet] [Thesis]. University of Waterloo; 2012. [cited 2019 Nov 11]. Available from: http://hdl.handle.net/10012/6704.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Goldan A. Unipolar Charge-Sensing for Evaporated Large-Area Solid-State Photoconductors for Digital Radiography. [Thesis]. University of Waterloo; 2012. Available from: http://hdl.handle.net/10012/6704

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Johannesburg

7. Langa, Dolly Frans. Comparison of the structural properties of a-Si:H and CulnSe₂ on glass and flexible substrates.

Degree: 2012, University of Johannesburg

M.Sc.

Thin film solar cells based on polycrystalline indium diselenide (CulnSe₂) and amorphous silicon (a-Si:H) are promising candidates for the efficient conversion of sunlight into… (more)

Subjects/Keywords: Thin films; Photovoltaic cells; Polycrystalline semiconductors; Amorphous semiconductors; Semiconductor films; Metallic films

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APA (6th Edition):

Langa, D. F. (2012). Comparison of the structural properties of a-Si:H and CulnSe₂ on glass and flexible substrates. (Thesis). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/4540

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Langa, Dolly Frans. “Comparison of the structural properties of a-Si:H and CulnSe₂ on glass and flexible substrates.” 2012. Thesis, University of Johannesburg. Accessed November 11, 2019. http://hdl.handle.net/10210/4540.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Langa, Dolly Frans. “Comparison of the structural properties of a-Si:H and CulnSe₂ on glass and flexible substrates.” 2012. Web. 11 Nov 2019.

Vancouver:

Langa DF. Comparison of the structural properties of a-Si:H and CulnSe₂ on glass and flexible substrates. [Internet] [Thesis]. University of Johannesburg; 2012. [cited 2019 Nov 11]. Available from: http://hdl.handle.net/10210/4540.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Langa DF. Comparison of the structural properties of a-Si:H and CulnSe₂ on glass and flexible substrates. [Thesis]. University of Johannesburg; 2012. Available from: http://hdl.handle.net/10210/4540

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


The Ohio State University

8. D'Souza, Arvind Inacib. Picosecond dynamics of charged carriers in amorphous semiconductors.

Degree: PhD, Graduate School, 1985, The Ohio State University

Subjects/Keywords: Physics; Amorphous semiconductors; Electrostatics

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APA (6th Edition):

D'Souza, A. I. (1985). Picosecond dynamics of charged carriers in amorphous semiconductors. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1487260135357755

Chicago Manual of Style (16th Edition):

D'Souza, Arvind Inacib. “Picosecond dynamics of charged carriers in amorphous semiconductors.” 1985. Doctoral Dissertation, The Ohio State University. Accessed November 11, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487260135357755.

MLA Handbook (7th Edition):

D'Souza, Arvind Inacib. “Picosecond dynamics of charged carriers in amorphous semiconductors.” 1985. Web. 11 Nov 2019.

Vancouver:

D'Souza AI. Picosecond dynamics of charged carriers in amorphous semiconductors. [Internet] [Doctoral dissertation]. The Ohio State University; 1985. [cited 2019 Nov 11]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1487260135357755.

Council of Science Editors:

D'Souza AI. Picosecond dynamics of charged carriers in amorphous semiconductors. [Doctoral Dissertation]. The Ohio State University; 1985. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1487260135357755

9. Alex,Mathew. Optical absorption studies in ion implanted and amorphous semiconductors - Investigations in some tetrahedrally co-ordinated and chalcogenide materials.

Degree: 2004, Cochin University of Science and Technology

 The thesis provides an overall review and introduction to amorphous semiconductors, followed by a brief discussion on the important structural models proposed for chalcogenide glasses… (more)

Subjects/Keywords: Amorphous semiconductors; Chalcogenide glasses

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APA (6th Edition):

Alex,Mathew. (2004). Optical absorption studies in ion implanted and amorphous semiconductors - Investigations in some tetrahedrally co-ordinated and chalcogenide materials. (Thesis). Cochin University of Science and Technology. Retrieved from http://dyuthi.cusat.ac.in/purl/993

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Alex,Mathew. “Optical absorption studies in ion implanted and amorphous semiconductors - Investigations in some tetrahedrally co-ordinated and chalcogenide materials.” 2004. Thesis, Cochin University of Science and Technology. Accessed November 11, 2019. http://dyuthi.cusat.ac.in/purl/993.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Alex,Mathew. “Optical absorption studies in ion implanted and amorphous semiconductors - Investigations in some tetrahedrally co-ordinated and chalcogenide materials.” 2004. Web. 11 Nov 2019.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

Alex,Mathew. Optical absorption studies in ion implanted and amorphous semiconductors - Investigations in some tetrahedrally co-ordinated and chalcogenide materials. [Internet] [Thesis]. Cochin University of Science and Technology; 2004. [cited 2019 Nov 11]. Available from: http://dyuthi.cusat.ac.in/purl/993.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Alex,Mathew. Optical absorption studies in ion implanted and amorphous semiconductors - Investigations in some tetrahedrally co-ordinated and chalcogenide materials. [Thesis]. Cochin University of Science and Technology; 2004. Available from: http://dyuthi.cusat.ac.in/purl/993

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

10. Bales, Gary Steven. Growth dynamics of amorphous and crystalline thin films.

Degree: PhD, Physics, 1990, Georgia Tech

Subjects/Keywords: Thin films; Amorphous semiconductors

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APA (6th Edition):

Bales, G. S. (1990). Growth dynamics of amorphous and crystalline thin films. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/29523

Chicago Manual of Style (16th Edition):

Bales, Gary Steven. “Growth dynamics of amorphous and crystalline thin films.” 1990. Doctoral Dissertation, Georgia Tech. Accessed November 11, 2019. http://hdl.handle.net/1853/29523.

MLA Handbook (7th Edition):

Bales, Gary Steven. “Growth dynamics of amorphous and crystalline thin films.” 1990. Web. 11 Nov 2019.

Vancouver:

Bales GS. Growth dynamics of amorphous and crystalline thin films. [Internet] [Doctoral dissertation]. Georgia Tech; 1990. [cited 2019 Nov 11]. Available from: http://hdl.handle.net/1853/29523.

Council of Science Editors:

Bales GS. Growth dynamics of amorphous and crystalline thin films. [Doctoral Dissertation]. Georgia Tech; 1990. Available from: http://hdl.handle.net/1853/29523


University of California – Berkeley

11. Looker, Quinn. Fabrication Process Development for High-Purity Germanium Radiation Detectors with Amorphous Semiconductor Contacts.

Degree: Nuclear Engineering, 2014, University of California – Berkeley

 High-purity germanium (HPGe) radiation detectors are well established as a valuable tool in nuclear science, astrophysics, and nuclear security applications. HPGe detectors excel in gamma-ray… (more)

Subjects/Keywords: Nuclear engineering; amorphous semiconductors; detector fabrication; germanium detectors

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APA (6th Edition):

Looker, Q. (2014). Fabrication Process Development for High-Purity Germanium Radiation Detectors with Amorphous Semiconductor Contacts. (Thesis). University of California – Berkeley. Retrieved from http://www.escholarship.org/uc/item/1d14c7t8

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Looker, Quinn. “Fabrication Process Development for High-Purity Germanium Radiation Detectors with Amorphous Semiconductor Contacts.” 2014. Thesis, University of California – Berkeley. Accessed November 11, 2019. http://www.escholarship.org/uc/item/1d14c7t8.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Looker, Quinn. “Fabrication Process Development for High-Purity Germanium Radiation Detectors with Amorphous Semiconductor Contacts.” 2014. Web. 11 Nov 2019.

Vancouver:

Looker Q. Fabrication Process Development for High-Purity Germanium Radiation Detectors with Amorphous Semiconductor Contacts. [Internet] [Thesis]. University of California – Berkeley; 2014. [cited 2019 Nov 11]. Available from: http://www.escholarship.org/uc/item/1d14c7t8.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Looker Q. Fabrication Process Development for High-Purity Germanium Radiation Detectors with Amorphous Semiconductor Contacts. [Thesis]. University of California – Berkeley; 2014. Available from: http://www.escholarship.org/uc/item/1d14c7t8

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Johannesburg

12. Saunderson, Jacobus Daniël. Tegnologie-ontwikkeling vir 'n buigbare amorfe silikon-sonsel-vervaardigingsproses.

Degree: PhD, 2012, University of Johannesburg

 The aim of this study was the development of a new technology for the manufacturing of amorphous silicon (a-Si:H) solar cells on flexible substrates. Kapton… (more)

Subjects/Keywords: Amorphous semiconductors; Silicon; Polymers; Solar cells; Chromogenic compounds

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APA (6th Edition):

Saunderson, J. D. (2012). Tegnologie-ontwikkeling vir 'n buigbare amorfe silikon-sonsel-vervaardigingsproses. (Doctoral Dissertation). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/5657

Chicago Manual of Style (16th Edition):

Saunderson, Jacobus Daniël. “Tegnologie-ontwikkeling vir 'n buigbare amorfe silikon-sonsel-vervaardigingsproses.” 2012. Doctoral Dissertation, University of Johannesburg. Accessed November 11, 2019. http://hdl.handle.net/10210/5657.

MLA Handbook (7th Edition):

Saunderson, Jacobus Daniël. “Tegnologie-ontwikkeling vir 'n buigbare amorfe silikon-sonsel-vervaardigingsproses.” 2012. Web. 11 Nov 2019.

Vancouver:

Saunderson JD. Tegnologie-ontwikkeling vir 'n buigbare amorfe silikon-sonsel-vervaardigingsproses. [Internet] [Doctoral dissertation]. University of Johannesburg; 2012. [cited 2019 Nov 11]. Available from: http://hdl.handle.net/10210/5657.

Council of Science Editors:

Saunderson JD. Tegnologie-ontwikkeling vir 'n buigbare amorfe silikon-sonsel-vervaardigingsproses. [Doctoral Dissertation]. University of Johannesburg; 2012. Available from: http://hdl.handle.net/10210/5657


University of New South Wales

13. Jafar, Mohammed. Amorphous hydrogenated silicon characteristics and devices.

Degree: Physics, 1994, University of New South Wales

Subjects/Keywords: Silicon; Surface chemistry; Amorphous semiconductors

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APA (6th Edition):

Jafar, M. (1994). Amorphous hydrogenated silicon characteristics and devices. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/55523 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37940/SOURCE01?view=true

Chicago Manual of Style (16th Edition):

Jafar, Mohammed. “Amorphous hydrogenated silicon characteristics and devices.” 1994. Doctoral Dissertation, University of New South Wales. Accessed November 11, 2019. http://handle.unsw.edu.au/1959.4/55523 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37940/SOURCE01?view=true.

MLA Handbook (7th Edition):

Jafar, Mohammed. “Amorphous hydrogenated silicon characteristics and devices.” 1994. Web. 11 Nov 2019.

Vancouver:

Jafar M. Amorphous hydrogenated silicon characteristics and devices. [Internet] [Doctoral dissertation]. University of New South Wales; 1994. [cited 2019 Nov 11]. Available from: http://handle.unsw.edu.au/1959.4/55523 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37940/SOURCE01?view=true.

Council of Science Editors:

Jafar M. Amorphous hydrogenated silicon characteristics and devices. [Doctoral Dissertation]. University of New South Wales; 1994. Available from: http://handle.unsw.edu.au/1959.4/55523 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37940/SOURCE01?view=true


University of North Texas

14. Pritchett, Merry. Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films.

Degree: 2004, University of North Texas

 Semiconductor circuitry feature miniaturization continues in response to Moore 's Law pushing the limits of aluminum and forcing the transition to Cu due to its… (more)

Subjects/Keywords: Metallizing.; Copper.; Amorphous semiconductors.; amorphous carbon; copper metalization; films

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APA (6th Edition):

Pritchett, M. (2004). Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc4493/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pritchett, Merry. “Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films.” 2004. Thesis, University of North Texas. Accessed November 11, 2019. https://digital.library.unt.edu/ark:/67531/metadc4493/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pritchett, Merry. “Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films.” 2004. Web. 11 Nov 2019.

Vancouver:

Pritchett M. Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films. [Internet] [Thesis]. University of North Texas; 2004. [cited 2019 Nov 11]. Available from: https://digital.library.unt.edu/ark:/67531/metadc4493/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pritchett M. Adherence/Diffusion Barrier Layers for Copper Metallization: Amorphous Carbon:Silicon Polymerized Films. [Thesis]. University of North Texas; 2004. Available from: https://digital.library.unt.edu/ark:/67531/metadc4493/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

15. Sanal, K C. Development of p-type transparent semiconducting oxides for thin film transistor applications.

Degree: Physics, 2014, Cochin University of Science and Technology

Semiconductor physics has developed significantly in the field of re- search and industry in the past few decades due to it’s numerous practical applications. One… (more)

Subjects/Keywords: transparent conducting oxides; Amorphous semiconductors; p-Type transparent oxide semiconductors; thin film transistors; transparent p-SnO/n-ZnO pn heterojunction

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APA (6th Edition):

Sanal, K. C. (2014). Development of p-type transparent semiconducting oxides for thin film transistor applications. (Thesis). Cochin University of Science and Technology. Retrieved from http://dyuthi.cusat.ac.in/purl/3991

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sanal, K C. “Development of p-type transparent semiconducting oxides for thin film transistor applications.” 2014. Thesis, Cochin University of Science and Technology. Accessed November 11, 2019. http://dyuthi.cusat.ac.in/purl/3991.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sanal, K C. “Development of p-type transparent semiconducting oxides for thin film transistor applications.” 2014. Web. 11 Nov 2019.

Vancouver:

Sanal KC. Development of p-type transparent semiconducting oxides for thin film transistor applications. [Internet] [Thesis]. Cochin University of Science and Technology; 2014. [cited 2019 Nov 11]. Available from: http://dyuthi.cusat.ac.in/purl/3991.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sanal KC. Development of p-type transparent semiconducting oxides for thin film transistor applications. [Thesis]. Cochin University of Science and Technology; 2014. Available from: http://dyuthi.cusat.ac.in/purl/3991

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Florida

16. Mavros, Michael. Computing the Optical Properties of Doped Silicon Quantum Dots for Photovoltaic Applications.

Degree: 2011, University of Florida

 The optical properties of twenty doped and undoped crystalline and amorphous silicon quantum dots, based off of Si29H36 and Si35H36, were calculated using time-dependent density… (more)

Subjects/Keywords: Atoms; Crystal structure; Electrons; Energy; Molecular orbitals; Molecules; Optical properties; Orbitals; Quantum dots; Silicon; Amorphous semiconductors; Photovoltaic cells; Semiconductors; Silicon

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APA (6th Edition):

Mavros, M. (2011). Computing the Optical Properties of Doped Silicon Quantum Dots for Photovoltaic Applications. (Thesis). University of Florida. Retrieved from http://ufdc.ufl.edu/AA00057209

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mavros, Michael. “Computing the Optical Properties of Doped Silicon Quantum Dots for Photovoltaic Applications.” 2011. Thesis, University of Florida. Accessed November 11, 2019. http://ufdc.ufl.edu/AA00057209.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mavros, Michael. “Computing the Optical Properties of Doped Silicon Quantum Dots for Photovoltaic Applications.” 2011. Web. 11 Nov 2019.

Vancouver:

Mavros M. Computing the Optical Properties of Doped Silicon Quantum Dots for Photovoltaic Applications. [Internet] [Thesis]. University of Florida; 2011. [cited 2019 Nov 11]. Available from: http://ufdc.ufl.edu/AA00057209.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mavros M. Computing the Optical Properties of Doped Silicon Quantum Dots for Photovoltaic Applications. [Thesis]. University of Florida; 2011. Available from: http://ufdc.ufl.edu/AA00057209

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Arizona

17. Rock, David Franklin. Modulation spectroscopy of amorphous Ge(x)Te(1-x) .

Degree: 1976, University of Arizona

 A study was made of the thermoreflectance spectra of a series of five thin film samples spanning the range of composition of the amorphous Ge(x)Te(1-x)… (more)

Subjects/Keywords: Optical spectroscopy.; Amorphous semiconductors.; Optical constants.; Semiconductors.

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APA (6th Edition):

Rock, D. F. (1976). Modulation spectroscopy of amorphous Ge(x)Te(1-x) . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/347881

Chicago Manual of Style (16th Edition):

Rock, David Franklin. “Modulation spectroscopy of amorphous Ge(x)Te(1-x) .” 1976. Masters Thesis, University of Arizona. Accessed November 11, 2019. http://hdl.handle.net/10150/347881.

MLA Handbook (7th Edition):

Rock, David Franklin. “Modulation spectroscopy of amorphous Ge(x)Te(1-x) .” 1976. Web. 11 Nov 2019.

Vancouver:

Rock DF. Modulation spectroscopy of amorphous Ge(x)Te(1-x) . [Internet] [Masters thesis]. University of Arizona; 1976. [cited 2019 Nov 11]. Available from: http://hdl.handle.net/10150/347881.

Council of Science Editors:

Rock DF. Modulation spectroscopy of amorphous Ge(x)Te(1-x) . [Masters Thesis]. University of Arizona; 1976. Available from: http://hdl.handle.net/10150/347881


Simon Fraser University

18. Divigalpitiya, Weerawanni Mudiyanselage Ranjith. Electrical conduction along dislocations in silicon and its effect on MIS solar cells.

Degree: 1986, Simon Fraser University

Subjects/Keywords: Solar cells.; Metal insulator semiconductors.; Amorphous semiconductors.

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APA (6th Edition):

Divigalpitiya, W. M. R. (1986). Electrical conduction along dislocations in silicon and its effect on MIS solar cells. (Thesis). Simon Fraser University. Retrieved from http://summit.sfu.ca/item/4622

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Divigalpitiya, Weerawanni Mudiyanselage Ranjith. “Electrical conduction along dislocations in silicon and its effect on MIS solar cells.” 1986. Thesis, Simon Fraser University. Accessed November 11, 2019. http://summit.sfu.ca/item/4622.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Divigalpitiya, Weerawanni Mudiyanselage Ranjith. “Electrical conduction along dislocations in silicon and its effect on MIS solar cells.” 1986. Web. 11 Nov 2019.

Vancouver:

Divigalpitiya WMR. Electrical conduction along dislocations in silicon and its effect on MIS solar cells. [Internet] [Thesis]. Simon Fraser University; 1986. [cited 2019 Nov 11]. Available from: http://summit.sfu.ca/item/4622.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Divigalpitiya WMR. Electrical conduction along dislocations in silicon and its effect on MIS solar cells. [Thesis]. Simon Fraser University; 1986. Available from: http://summit.sfu.ca/item/4622

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

19. Triska, Joshua B. Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors.

Degree: MS, Electrical and Computer Engineering, 2011, Oregon State University

 Nanolaminate dielectrics combine two or more insulating materials in a many-layered film. These structures can be made to significantly outperform films composed of a single… (more)

Subjects/Keywords: Atomic layer deposition; Amorphous semiconductors

…2.2.2 Amorphous Oxide Semiconductors The precursors to AOS materials began with the… …transistors (TTFTs) based on amorphous oxide semiconductor channel materials such as… …produce visual artifacts. Thin film transistor technology is currently dominated by amorphous… …alone is generally fully amorphous asdeposited and remains so up to 900 °C, but can introduce… …metal-oxide-semiconductors field effect transistors (MOSFET) is replaced by the… 

Page 1 Page 2 Page 3 Page 4 Page 5 Page 6 Page 7 Sample image

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APA (6th Edition):

Triska, J. B. (2011). Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/21720

Chicago Manual of Style (16th Edition):

Triska, Joshua B. “Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors.” 2011. Masters Thesis, Oregon State University. Accessed November 11, 2019. http://hdl.handle.net/1957/21720.

MLA Handbook (7th Edition):

Triska, Joshua B. “Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors.” 2011. Web. 11 Nov 2019.

Vancouver:

Triska JB. Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors. [Internet] [Masters thesis]. Oregon State University; 2011. [cited 2019 Nov 11]. Available from: http://hdl.handle.net/1957/21720.

Council of Science Editors:

Triska JB. Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors. [Masters Thesis]. Oregon State University; 2011. Available from: http://hdl.handle.net/1957/21720


University of Oregon

20. Erslev, Peter Tweedie, 1979-. The electronic structure within the mobility gap of transparent amorphous oxide semiconductors.

Degree: 2010, University of Oregon

 Transparent amorphous oxide semiconductors are a relatively new class of materials which show significant promise for electronic device applications. The electron mobility in these materials… (more)

Subjects/Keywords: Electronic structure; Mobility gap; Amorphous oxide semiconductors; Transparent electronics; Solid state physics

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APA (6th Edition):

Erslev, Peter Tweedie, 1. (2010). The electronic structure within the mobility gap of transparent amorphous oxide semiconductors. (Thesis). University of Oregon. Retrieved from http://hdl.handle.net/1794/10566

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Erslev, Peter Tweedie, 1979-. “The electronic structure within the mobility gap of transparent amorphous oxide semiconductors.” 2010. Thesis, University of Oregon. Accessed November 11, 2019. http://hdl.handle.net/1794/10566.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Erslev, Peter Tweedie, 1979-. “The electronic structure within the mobility gap of transparent amorphous oxide semiconductors.” 2010. Web. 11 Nov 2019.

Vancouver:

Erslev, Peter Tweedie 1. The electronic structure within the mobility gap of transparent amorphous oxide semiconductors. [Internet] [Thesis]. University of Oregon; 2010. [cited 2019 Nov 11]. Available from: http://hdl.handle.net/1794/10566.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Erslev, Peter Tweedie 1. The electronic structure within the mobility gap of transparent amorphous oxide semiconductors. [Thesis]. University of Oregon; 2010. Available from: http://hdl.handle.net/1794/10566

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Iowa State University

21. Uttecht, Ronald Robert. Bistable resistivity switching properties of the semiconducting glass As-Te-Ge.

Degree: 1969, Iowa State University

Subjects/Keywords: Semiconductors; Amorphous substances; Electrical and Electronics

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APA (6th Edition):

Uttecht, R. R. (1969). Bistable resistivity switching properties of the semiconducting glass As-Te-Ge. (Thesis). Iowa State University. Retrieved from https://lib.dr.iastate.edu/rtd/3797

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Uttecht, Ronald Robert. “Bistable resistivity switching properties of the semiconducting glass As-Te-Ge.” 1969. Thesis, Iowa State University. Accessed November 11, 2019. https://lib.dr.iastate.edu/rtd/3797.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Uttecht, Ronald Robert. “Bistable resistivity switching properties of the semiconducting glass As-Te-Ge.” 1969. Web. 11 Nov 2019.

Vancouver:

Uttecht RR. Bistable resistivity switching properties of the semiconducting glass As-Te-Ge. [Internet] [Thesis]. Iowa State University; 1969. [cited 2019 Nov 11]. Available from: https://lib.dr.iastate.edu/rtd/3797.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Uttecht RR. Bistable resistivity switching properties of the semiconducting glass As-Te-Ge. [Thesis]. Iowa State University; 1969. Available from: https://lib.dr.iastate.edu/rtd/3797

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Johannesburg

22. Esterhuyse, Coreen. Foto-degradering van amorfe silikon dun lagies.

Degree: 2014, University of Johannesburg

M.Sc. (Physics)

Amorphous silicon is one of the most promising materials for large area solar cells for terestrial photovoltaic applications. Unfortunately these cells suffer from… (more)

Subjects/Keywords: Silicon-carbide thin films; Silicon - Optical properties; Amorphous semiconductors - Optical properties; Solar cells

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APA (6th Edition):

Esterhuyse, C. (2014). Foto-degradering van amorfe silikon dun lagies. (Thesis). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/9948

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Esterhuyse, Coreen. “Foto-degradering van amorfe silikon dun lagies.” 2014. Thesis, University of Johannesburg. Accessed November 11, 2019. http://hdl.handle.net/10210/9948.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Esterhuyse, Coreen. “Foto-degradering van amorfe silikon dun lagies.” 2014. Web. 11 Nov 2019.

Vancouver:

Esterhuyse C. Foto-degradering van amorfe silikon dun lagies. [Internet] [Thesis]. University of Johannesburg; 2014. [cited 2019 Nov 11]. Available from: http://hdl.handle.net/10210/9948.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Esterhuyse C. Foto-degradering van amorfe silikon dun lagies. [Thesis]. University of Johannesburg; 2014. Available from: http://hdl.handle.net/10210/9948

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Johannesburg

23. Dreyer, Aletta Roletta Elizabeth. Homogeniteit en stabiliteit van amorfe silikon dun lagies.

Degree: 2014, University of Johannesburg

M.Sc. (Physics)

Amorhous silicon is one of the most promising materials for large area solar cells for terestrial photovoltaic applications. Unfortunately these cells suffer from… (more)

Subjects/Keywords: Silicon.; Solar cells.; Photovoltaic power generation.; Amorphous semiconductors.; Silicon-carbide thin films.

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APA (6th Edition):

Dreyer, A. R. E. (2014). Homogeniteit en stabiliteit van amorfe silikon dun lagies. (Thesis). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/9682

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dreyer, Aletta Roletta Elizabeth. “Homogeniteit en stabiliteit van amorfe silikon dun lagies.” 2014. Thesis, University of Johannesburg. Accessed November 11, 2019. http://hdl.handle.net/10210/9682.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dreyer, Aletta Roletta Elizabeth. “Homogeniteit en stabiliteit van amorfe silikon dun lagies.” 2014. Web. 11 Nov 2019.

Vancouver:

Dreyer ARE. Homogeniteit en stabiliteit van amorfe silikon dun lagies. [Internet] [Thesis]. University of Johannesburg; 2014. [cited 2019 Nov 11]. Available from: http://hdl.handle.net/10210/9682.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dreyer ARE. Homogeniteit en stabiliteit van amorfe silikon dun lagies. [Thesis]. University of Johannesburg; 2014. Available from: http://hdl.handle.net/10210/9682

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

24. Adarsh, K V. Studies On Photoinduced Interdiffusion In Se/ As2S3 And Bi/As2S3 Nanolayered Films.

Degree: 2007, Indian Institute of Science

 Availability of amorphous semiconductors in the form of high quality multilayers provide potential applications in the field of micro- and optoelectronics. Although the misfit problems… (more)

Subjects/Keywords: Nanolayered Thin Films; Se/As2S3 Nanolayered Films; Bi/As2S3 Nanolayered Films; Amorphous Chalcogenides; Nanolayered Films - Photoinduced Interdiffusion; Amorphous Chalcogenide Semiconductors; Materials Science

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APA (6th Edition):

Adarsh, K. V. (2007). Studies On Photoinduced Interdiffusion In Se/ As2S3 And Bi/As2S3 Nanolayered Films. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/477

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Adarsh, K V. “Studies On Photoinduced Interdiffusion In Se/ As2S3 And Bi/As2S3 Nanolayered Films.” 2007. Thesis, Indian Institute of Science. Accessed November 11, 2019. http://hdl.handle.net/2005/477.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Adarsh, K V. “Studies On Photoinduced Interdiffusion In Se/ As2S3 And Bi/As2S3 Nanolayered Films.” 2007. Web. 11 Nov 2019.

Vancouver:

Adarsh KV. Studies On Photoinduced Interdiffusion In Se/ As2S3 And Bi/As2S3 Nanolayered Films. [Internet] [Thesis]. Indian Institute of Science; 2007. [cited 2019 Nov 11]. Available from: http://hdl.handle.net/2005/477.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Adarsh KV. Studies On Photoinduced Interdiffusion In Se/ As2S3 And Bi/As2S3 Nanolayered Films. [Thesis]. Indian Institute of Science; 2007. Available from: http://hdl.handle.net/2005/477

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

25. Saji, K J. Amorphous Oxide Transparent Thin Films: Growth, Characterisation and Application to Thin Film Transistors.

Degree: Physics, 2008, Cochin University of Science and Technology

This work mainly concentrate to understand the optical and electrical properties of amorphous zinc tin oxide and amorphous zinc indium tin oxide thin films for… (more)

Subjects/Keywords: Amorphous Semiconductors; Amorphous Oxide Thin Film Transistors; Thin Film Transistors; Pulsed Laser Deposition

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APA (6th Edition):

Saji, K. J. (2008). Amorphous Oxide Transparent Thin Films: Growth, Characterisation and Application to Thin Film Transistors. (Thesis). Cochin University of Science and Technology. Retrieved from http://dyuthi.cusat.ac.in/purl/2519

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Saji, K J. “Amorphous Oxide Transparent Thin Films: Growth, Characterisation and Application to Thin Film Transistors.” 2008. Thesis, Cochin University of Science and Technology. Accessed November 11, 2019. http://dyuthi.cusat.ac.in/purl/2519.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Saji, K J. “Amorphous Oxide Transparent Thin Films: Growth, Characterisation and Application to Thin Film Transistors.” 2008. Web. 11 Nov 2019.

Vancouver:

Saji KJ. Amorphous Oxide Transparent Thin Films: Growth, Characterisation and Application to Thin Film Transistors. [Internet] [Thesis]. Cochin University of Science and Technology; 2008. [cited 2019 Nov 11]. Available from: http://dyuthi.cusat.ac.in/purl/2519.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Saji KJ. Amorphous Oxide Transparent Thin Films: Growth, Characterisation and Application to Thin Film Transistors. [Thesis]. Cochin University of Science and Technology; 2008. Available from: http://dyuthi.cusat.ac.in/purl/2519

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

26. Κωτσαλάς, Ιωάννης. Μελέτη της δομής και των φωτοεπαγόμενων και θερμικά επαγόμενων δομικών μεταβολών άμορφων χαλκογενίδων με χρήση της φασματοσκοπίας Raman.

Degree: 1999, National Technical University of Athens (NTUA); Εθνικό Μετσόβιο Πολυτεχνείο (ΕΜΠ)

Subjects/Keywords: Άμορφοι ημιαγωγοί; Άμορφες χαλκογενίδες; Φασματοσκοπία Raman; Amorphous semiconductors; Amorphous chalcogenides; Raman spectroscopy

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APA (6th Edition):

Κωτσαλάς, . . (1999). Μελέτη της δομής και των φωτοεπαγόμενων και θερμικά επαγόμενων δομικών μεταβολών άμορφων χαλκογενίδων με χρήση της φασματοσκοπίας Raman. (Thesis). National Technical University of Athens (NTUA); Εθνικό Μετσόβιο Πολυτεχνείο (ΕΜΠ). Retrieved from http://hdl.handle.net/10442/hedi/11553

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Κωτσαλάς, Ιωάννης. “Μελέτη της δομής και των φωτοεπαγόμενων και θερμικά επαγόμενων δομικών μεταβολών άμορφων χαλκογενίδων με χρήση της φασματοσκοπίας Raman.” 1999. Thesis, National Technical University of Athens (NTUA); Εθνικό Μετσόβιο Πολυτεχνείο (ΕΜΠ). Accessed November 11, 2019. http://hdl.handle.net/10442/hedi/11553.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Κωτσαλάς, Ιωάννης. “Μελέτη της δομής και των φωτοεπαγόμενων και θερμικά επαγόμενων δομικών μεταβολών άμορφων χαλκογενίδων με χρήση της φασματοσκοπίας Raman.” 1999. Web. 11 Nov 2019.

Vancouver:

Κωτσαλάς . Μελέτη της δομής και των φωτοεπαγόμενων και θερμικά επαγόμενων δομικών μεταβολών άμορφων χαλκογενίδων με χρήση της φασματοσκοπίας Raman. [Internet] [Thesis]. National Technical University of Athens (NTUA); Εθνικό Μετσόβιο Πολυτεχνείο (ΕΜΠ); 1999. [cited 2019 Nov 11]. Available from: http://hdl.handle.net/10442/hedi/11553.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Κωτσαλάς . Μελέτη της δομής και των φωτοεπαγόμενων και θερμικά επαγόμενων δομικών μεταβολών άμορφων χαλκογενίδων με χρήση της φασματοσκοπίας Raman. [Thesis]. National Technical University of Athens (NTUA); Εθνικό Μετσόβιο Πολυτεχνείο (ΕΜΠ); 1999. Available from: http://hdl.handle.net/10442/hedi/11553

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

27. NandaKumar, K. Optical and Thermal Properties of Selected Ternary Amorphous Semiconductors.

Degree: 1992, Cochin University of Science and Technology

Subjects/Keywords: optical and Thermal Properties; Ternary Amorphous Semiconductors; Photoacoustic Spectroscopy

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APA (6th Edition):

NandaKumar, K. (1992). Optical and Thermal Properties of Selected Ternary Amorphous Semiconductors. (Thesis). Cochin University of Science and Technology. Retrieved from http://dyuthi.cusat.ac.in/purl/1701

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

NandaKumar, K. “Optical and Thermal Properties of Selected Ternary Amorphous Semiconductors.” 1992. Thesis, Cochin University of Science and Technology. Accessed November 11, 2019. http://dyuthi.cusat.ac.in/purl/1701.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

NandaKumar, K. “Optical and Thermal Properties of Selected Ternary Amorphous Semiconductors.” 1992. Web. 11 Nov 2019.

Vancouver:

NandaKumar K. Optical and Thermal Properties of Selected Ternary Amorphous Semiconductors. [Internet] [Thesis]. Cochin University of Science and Technology; 1992. [cited 2019 Nov 11]. Available from: http://dyuthi.cusat.ac.in/purl/1701.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

NandaKumar K. Optical and Thermal Properties of Selected Ternary Amorphous Semiconductors. [Thesis]. Cochin University of Science and Technology; 1992. Available from: http://dyuthi.cusat.ac.in/purl/1701

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Texas A&M University

28. Watson, Paul Willard. Superconductivity in amorphous Ti(1-x)V(x) thin films.

Degree: MS, physics, 2012, Texas A&M University

Subjects/Keywords: physics.; Major physics.; Superconductivity.; Amorphous semiconductors.; Titanium-vanadium alloys.

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APA (6th Edition):

Watson, P. W. (2012). Superconductivity in amorphous Ti(1-x)V(x) thin films. (Masters Thesis). Texas A&M University. Retrieved from http://hdl.handle.net/1969.1/ETD-TAMU-1986-THESIS-W341

Chicago Manual of Style (16th Edition):

Watson, Paul Willard. “Superconductivity in amorphous Ti(1-x)V(x) thin films.” 2012. Masters Thesis, Texas A&M University. Accessed November 11, 2019. http://hdl.handle.net/1969.1/ETD-TAMU-1986-THESIS-W341.

MLA Handbook (7th Edition):

Watson, Paul Willard. “Superconductivity in amorphous Ti(1-x)V(x) thin films.” 2012. Web. 11 Nov 2019.

Vancouver:

Watson PW. Superconductivity in amorphous Ti(1-x)V(x) thin films. [Internet] [Masters thesis]. Texas A&M University; 2012. [cited 2019 Nov 11]. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-1986-THESIS-W341.

Council of Science Editors:

Watson PW. Superconductivity in amorphous Ti(1-x)V(x) thin films. [Masters Thesis]. Texas A&M University; 2012. Available from: http://hdl.handle.net/1969.1/ETD-TAMU-1986-THESIS-W341


Lehigh University

29. Mahmoudabadi, Forough. Indium-Gallium-Zinc Oxide Thin-Film Transistors for Active-Matrix Flat-Panel Displays.

Degree: PhD, Electrical Engineering, 2017, Lehigh University

Amorphous oxide semiconductors (AOSs) including amorphous InGaZnO (a-IGZO) areexpected to be used as the thin-film semiconducting materials for TFTs in the next-generation ultra-high definition (UHD)… (more)

Subjects/Keywords: a-IGZO; Amorphous oxide semiconductors; Flat-Panel Displays; Flexible Electronics; Thin-Film Transistors; Electrical and Computer Engineering; Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mahmoudabadi, F. (2017). Indium-Gallium-Zinc Oxide Thin-Film Transistors for Active-Matrix Flat-Panel Displays. (Doctoral Dissertation). Lehigh University. Retrieved from https://preserve.lehigh.edu/etd/2706

Chicago Manual of Style (16th Edition):

Mahmoudabadi, Forough. “Indium-Gallium-Zinc Oxide Thin-Film Transistors for Active-Matrix Flat-Panel Displays.” 2017. Doctoral Dissertation, Lehigh University. Accessed November 11, 2019. https://preserve.lehigh.edu/etd/2706.

MLA Handbook (7th Edition):

Mahmoudabadi, Forough. “Indium-Gallium-Zinc Oxide Thin-Film Transistors for Active-Matrix Flat-Panel Displays.” 2017. Web. 11 Nov 2019.

Vancouver:

Mahmoudabadi F. Indium-Gallium-Zinc Oxide Thin-Film Transistors for Active-Matrix Flat-Panel Displays. [Internet] [Doctoral dissertation]. Lehigh University; 2017. [cited 2019 Nov 11]. Available from: https://preserve.lehigh.edu/etd/2706.

Council of Science Editors:

Mahmoudabadi F. Indium-Gallium-Zinc Oxide Thin-Film Transistors for Active-Matrix Flat-Panel Displays. [Doctoral Dissertation]. Lehigh University; 2017. Available from: https://preserve.lehigh.edu/etd/2706


University of Saskatchewan

30. Fogal, Bud J. Electronic transport properties of stabilized amorphous selenium x-ray photoconductors.

Degree: 2005, University of Saskatchewan

Amorphous selenium (a-Se) and its alloys are important photoconductor materials used in direct conversion flat panel digital x-ray detectors. The performance of these detectors is… (more)

Subjects/Keywords: charge transport; x-ray photoconductors; selenium; amorphous semiconductors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Fogal, B. J. (2005). Electronic transport properties of stabilized amorphous selenium x-ray photoconductors. (Thesis). University of Saskatchewan. Retrieved from http://hdl.handle.net/10388/etd-03162005-170229

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Fogal, Bud J. “Electronic transport properties of stabilized amorphous selenium x-ray photoconductors.” 2005. Thesis, University of Saskatchewan. Accessed November 11, 2019. http://hdl.handle.net/10388/etd-03162005-170229.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Fogal, Bud J. “Electronic transport properties of stabilized amorphous selenium x-ray photoconductors.” 2005. Web. 11 Nov 2019.

Vancouver:

Fogal BJ. Electronic transport properties of stabilized amorphous selenium x-ray photoconductors. [Internet] [Thesis]. University of Saskatchewan; 2005. [cited 2019 Nov 11]. Available from: http://hdl.handle.net/10388/etd-03162005-170229.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Fogal BJ. Electronic transport properties of stabilized amorphous selenium x-ray photoconductors. [Thesis]. University of Saskatchewan; 2005. Available from: http://hdl.handle.net/10388/etd-03162005-170229

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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