subject:(All Si tandem cell)

University of New South Wales

1. Yang, Chien-Jen. Transparent conducting aluminium doped zinc oxide for silicon quantum dot solar cell devices in third generation photovoltaics.

Degree: Photovoltaics & Renewable Energy Engineering, 2015, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/55675 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:38411/SOURCE02?view=true

► Silicon quantum dots (QDs), a subset of Si nanocrystals (NCs), in dielectric matrices with bandgap tunability are promising thin film materials for third generation photovoltaics,… (more)

▼ Silicon quantum dots (QDs), a subset of Si nanocrystals (NCs), in dielectric matrices with bandgap tunability are promising thin film materials for third generation photovoltaics, which aim to cost effectively exceed the Shockley-Queisser limit of efficiency. The Si QDs investigated in this thesis were fabricated by magnetron sputtered thin film superlattice bilayers of silicon rich oxide (SRO) and silicon dioxide (SiO2) followed by annealing at 1100 °C. The annealing causes solid-state nucleation and subsequent formation of Si NCs in the SRO layers. However, the main issue with this type of Si NC material is its poor carrier transport and material quality. Solar cell devices in the past have experienced heavy current crowding and high series resistance despite their reasonable open-circuit voltages up to 492 mV. Aluminium doped zinc oxide (AZO) is a promising transparent conducting oxide (TCO) which is often used in thin-film solar cells as transparent contacts. From the literature surveyed, AZO has never been used to make Si NC solar cell devices before. The key advantage of AZO is its high melting point of 1975 °C, which is much higher than other common TCOs. This allows AZO to be annealed at 1100 °C together with the SRO/SiO2 bilayers, although the structural, electrical and optical properties of the AZO thin films change after annealing. The main issue is the heavy decrease in conductivity and cross-diffusion of elements.For the first time, nucleation of Si NCs in SRO/SiO2 bilayers was observed in real-time via an aberration-corrected high resolution transmission electron microscope with in situ heating up to 600 °C. This particular experiment showed that nucleation of Si NCs begins at an unexpectedly low temperature (450 °C) which suggests that ex situ annealing at 1100 °C may not be necessary. However, through external furnace annealing temperature dependence experiments later it was shown that the higher the annealing temperature, the better the extent of crystallisation of the Si NCs. The advantages of high Si content SRO/SiO2 bilayer superlattices with boron and phosphorus doping were also investigated. It was also shown that AZO forms a good ohmic contact to both the high Si content B and P doped SRO/SiO2 bilayer superlattices. Finally, together with utilising AZO as a transparent contact, a prototype superstrate configured Si NC solar cell device is demonstrated. Advisors/Committee Members: Conibeer, Gavin, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Perez-Wurfl, Ivan, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Green, Martin, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW.

Subjects/Keywords: Aluminium doped zinc oxide; Silicon quantum dots; Silicon nanocrystals; Transparent conducting oxide; Third generation photovoltaics; All-Si tandem cell

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APA (6^th Edition):

Yang, C. (2015). Transparent conducting aluminium doped zinc oxide for silicon quantum dot solar cell devices in third generation photovoltaics. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/55675 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:38411/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Yang, Chien-Jen. “Transparent conducting aluminium doped zinc oxide for silicon quantum dot solar cell devices in third generation photovoltaics.” 2015. Doctoral Dissertation, University of New South Wales. Accessed December 08, 2019. http://handle.unsw.edu.au/1959.4/55675 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:38411/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Yang, Chien-Jen. “Transparent conducting aluminium doped zinc oxide for silicon quantum dot solar cell devices in third generation photovoltaics.” 2015. Web. 08 Dec 2019.

Vancouver:

Yang C. Transparent conducting aluminium doped zinc oxide for silicon quantum dot solar cell devices in third generation photovoltaics. [Internet] [Doctoral dissertation]. University of New South Wales; 2015. [cited 2019 Dec 08]. Available from: http://handle.unsw.edu.au/1959.4/55675 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:38411/SOURCE02?view=true.

Council of Science Editors:

Yang C. Transparent conducting aluminium doped zinc oxide for silicon quantum dot solar cell devices in third generation photovoltaics. [Doctoral Dissertation]. University of New South Wales; 2015. Available from: http://handle.unsw.edu.au/1959.4/55675 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:38411/SOURCE02?view=true

University of New South Wales

2. Hsieh, Andy Shang-Yuan. Investigation of Si/SiO2 and Si/SiOx quantum well structures for applications as energy selective contacts and all-silicon tandem cells.

Degree: Photovoltaics & Renewable Energy Engineering, 2012, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/57316 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43280/SOURCE02?view=true

► In order to satisfy the world’s energy demands while simultaneously preserving the sustainability of the environment, it isinevitable to shift the reliance of fossil fuels… (more)

▼ In order to satisfy the world’s energy demands while simultaneously preserving the sustainability of the environment, it isinevitable to shift the reliance of fossil fuels to renewable energy sources. Photovoltaic is the fastest growing energy source inthe world and the cost of production have reduced significantly over the past decade for it to be considered as a cost-competitivesolution. Increasing the cell efficiency and bringing the cost down towards grid parity continues to be the primary motivation forresearch and development in photovoltaics technology.The third generation photovoltaics involve novel cell designs and concepts that have potentials in achieving very high efficiencyand low cost solar cells. These include tandem solar cells, quantum well/dot solar cells, hot carrier solar cells and up-converters.Resonant tunnelling effect in Si/SiO2 quantum well structures could find potential applications in all-Si tandem cells in the formof superlattice and energy selective contacts in hot carrier solar cells in the form of double barrier structure. The fabrication ofcrystalline Si/SiO2 quantum well to achieve the desired confinement effect is no trivial task. In this thesis, the structures weredeposited by RF magnetron reactive sputtering followed by post thermal treatment to crystallize the amorphous silicon layer.The enhancement of crystallization temperature has been observed experimentally for low dimensional Si well in the order of afew nanometres. The crystallinity has also been experimentally demonstrated to be strongly dependent on the annealingtemperature rather than the duration. The size of silicon nanocrystals was calculated and compared using different analyticalapproaches. It was observed that the Si thickness and annealing temperature both plays a role in the size of the nanocrystals. Thebandgap enhancement was evident from variation of luminescence energy between 1.3 to 1.8 eV as function of Si wellthickness. The origin of this luminescence was studied. The crystallization and photoluminescence properties of Si/SiOxstructures (x<2) were also investigated. Finally the feasibility of partially crystalline quantum well for energy selective contactapplication was discussed. Advisors/Committee Members: Conibeer, Gavin, ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, Faculty of Engineering, UNSW, Green, Martin, ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, Faculty of Engineering, UNSW.

Subjects/Keywords: Photovoltaic; Quantum wells structures; All-silicon tandem cells; Si/SiO2; Si/SiOx

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APA (6^th Edition):

Hsieh, A. S. (2012). Investigation of Si/SiO2 and Si/SiOx quantum well structures for applications as energy selective contacts and all-silicon tandem cells. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/57316 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43280/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Hsieh, Andy Shang-Yuan. “Investigation of Si/SiO2 and Si/SiOx quantum well structures for applications as energy selective contacts and all-silicon tandem cells.” 2012. Doctoral Dissertation, University of New South Wales. Accessed December 08, 2019. http://handle.unsw.edu.au/1959.4/57316 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43280/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Hsieh, Andy Shang-Yuan. “Investigation of Si/SiO2 and Si/SiOx quantum well structures for applications as energy selective contacts and all-silicon tandem cells.” 2012. Web. 08 Dec 2019.

Vancouver:

Hsieh AS. Investigation of Si/SiO2 and Si/SiOx quantum well structures for applications as energy selective contacts and all-silicon tandem cells. [Internet] [Doctoral dissertation]. University of New South Wales; 2012. [cited 2019 Dec 08]. Available from: http://handle.unsw.edu.au/1959.4/57316 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43280/SOURCE02?view=true.

Council of Science Editors:

Hsieh AS. Investigation of Si/SiO2 and Si/SiOx quantum well structures for applications as energy selective contacts and all-silicon tandem cells. [Doctoral Dissertation]. University of New South Wales; 2012. Available from: http://handle.unsw.edu.au/1959.4/57316 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43280/SOURCE02?view=true

University of New South Wales

3. Song, Ning. Epitaxial Growth of Cu2ZnSnS4 Thin Films for Tandem Solar Cells.

Degree: Photovoltaics & Renewable Energy Engineering, 2015, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/55428 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37528/SOURCE02?view=true

► Silicon wafer based solar cells account for about 90% of the photovoltaic market and will continue to be dominant in the near future. Tandem solar… (more)

▼ Silicon wafer based solar cells account for about 90% of the photovoltaic market and will continue to be dominant in the near future. Tandem solar cells employing Si as the bottom cell can further boost efficiency. Cost-effective and environmentally friendly Cu2ZnSnS4 (CZTS) thin films with a large absorption coefficient of over 10E4 cm-1 and a band gap of 1.5 eV are suitable for use as a middle cell in a three-stack, and the band gap of CZTS is tuneable within the related alloy system for the top cell in a two-stack tandem cells employing Si as bottom cell. This thesis investigates the fabrication of epitaxial CZTS thin films for developing tandem solar cells with low cost and studies the fundamental properties of as-deposited CZTS thin films.In this work, single-phase CZTS thin films are deposited on Si substrates using one-stage radio frequency (RF) magnetron sputtering, which is an environmentally friendly, inexpensive, high-throughput and simple deposition technique. The fundamental properties of the as-deposited films and the effects of substrate orientation on the properties of the CZTS films are analysed. In addition, a post-sulfurization treatment is confirmed to improve the crystallinity of the as-deposited films. An intermediate layer between CZTS and Si is needed to passivate the Si surface and impede the Cu diffusion into the Si substrates. Al2O3 and ZnS are considered for this purpose. Epitaxial growth of CZTS is achieved on sapphire (0001) and ZnS (100) substrates by RF magnetron sputtering. The optimum growth parameters are varied with different substrates to achieve high quality epitaxial CZTS thin films. The band gap of the sputtered epitaxial CZTS thin films is estimated to be 1.51 eV, suitable for high efficiency thin film solar cells. A novel diode laser annealing is developed and shown to further improve the crystallinity and reduce Cu/Zn disorder within CZTS epitaxial films.An Au/epi-CZTS/n-Si/Ag P-N junction structure is fabricated in conjunction with our research partners. The current density-voltage characteristic results indicate that the epi-CZTS thin films deposited on Si substrates are promising for photovoltaic application. Advisors/Committee Members: Green, Martin, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Hao, Xiaojing, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW.

Subjects/Keywords: Tandem solar cells; Cu2ZnSnS4 (CZTS); Epitaxy; Si solar cell

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Song, N. (2015). Epitaxial Growth of Cu2ZnSnS4 Thin Films for Tandem Solar Cells. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/55428 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37528/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Song, Ning. “Epitaxial Growth of Cu2ZnSnS4 Thin Films for Tandem Solar Cells.” 2015. Doctoral Dissertation, University of New South Wales. Accessed December 08, 2019. http://handle.unsw.edu.au/1959.4/55428 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37528/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Song, Ning. “Epitaxial Growth of Cu2ZnSnS4 Thin Films for Tandem Solar Cells.” 2015. Web. 08 Dec 2019.

Vancouver:

Song N. Epitaxial Growth of Cu2ZnSnS4 Thin Films for Tandem Solar Cells. [Internet] [Doctoral dissertation]. University of New South Wales; 2015. [cited 2019 Dec 08]. Available from: http://handle.unsw.edu.au/1959.4/55428 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37528/SOURCE02?view=true.

Council of Science Editors:

Song N. Epitaxial Growth of Cu2ZnSnS4 Thin Films for Tandem Solar Cells. [Doctoral Dissertation]. University of New South Wales; 2015. Available from: http://handle.unsw.edu.au/1959.4/55428 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37528/SOURCE02?view=true

University of New South Wales

4. Wang, Li. High efficiency three terminal GaAsP/SiGe dual junction solar Cell on silicon substrate.

Degree: Photovoltaics & Renewable Energy Engineering, 2017, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/57310 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43274/SOURCE02?view=true

► III-V solar cells are well known for the world record efficiencies in photovoltaic field. Integrating III-V solar cells on silicon (Si) substrates can lead to… (more)

▼ III-V solar cells are well known for the world record efficiencies in photovoltaic field. Integrating III-V solar cells on silicon (Si) substrates can lead to a significant increase in efficiency over the present best monocrystalline Si laboratory device. The challenge is the lattice-mismatch between III-V material and Si. A leveraging technology of metamorphic silicon: germanium (SiGe) buffer between the Si and the III-V material provides a low-dislocation interface for III-V nucleation. The SiGe layer may then serve as a high-quality current-matched bottom cell to form a tandem dual-junction structure. A GaAsP cell with optimum material composition was selected as the top solar cell, due to its contribution to a lattice-matched GaAsP/SiGe tandem device on Si with 40% theoretical efficiency. This research first describes the design, fabrication, analysis and improvement of the GaAsP top solar cell of various generations. GaAsP top cell efficiencies have been improved from 8.4% to 18.4%, with bandgap voltage offsets (Woc) of 0.48 V and 0.31 V under concentration factors of 1X and 20X, respectively. This progress is made by improved III-V material quality, reduced series resistance and addition of an anti-reflection coating. Next, the progress of a three-terminal (3T) GaAsP/SiGe tandem solar cell on Si is demonstrated. A corrected three-terminal tandem efficiency of 20.6% under 1X illumination is achieved, a relative improvement of approximately 9% compared to the 18.9% efficiency reported previously. The difference between short circuit current measured outdoor and indoor leads to an approximate 1.5% relative difference in 3T tandem efficiencies. Current matching is realized under 2.1X illuminations. These are achieved by the improved tandem structure, optimized fabrication process, adjustable light source, and effect from the bottom cell area. Pathways to achieve the realistic efficiency of over 29% under 1X illumination and over 32% under 20X illuminations are also provided.Finally, the GaAsP solar cell has been characterized by photoluminescence (PL) and electroluminescence (EL) techniques. The band-to-band absorption coefficient and the external quantum efficiency (EQE) near the band edge have been extracted. The wavelength dependent PL spectra emitted from various III-V film stacks is also analyzed and discussed. Advisors/Committee Members: Barnett, Allen, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Perez-Wurfl, Ivan, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW.

Subjects/Keywords: SiGe; Tandem solar cell; GaAsP; III-V on Si; High efficiency

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APA (6^th Edition):

Wang, L. (2017). High efficiency three terminal GaAsP/SiGe dual junction solar Cell on silicon substrate. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/57310 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43274/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Wang, Li. “High efficiency three terminal GaAsP/SiGe dual junction solar Cell on silicon substrate.” 2017. Doctoral Dissertation, University of New South Wales. Accessed December 08, 2019. http://handle.unsw.edu.au/1959.4/57310 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43274/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Wang, Li. “High efficiency three terminal GaAsP/SiGe dual junction solar Cell on silicon substrate.” 2017. Web. 08 Dec 2019.

Vancouver:

Wang L. High efficiency three terminal GaAsP/SiGe dual junction solar Cell on silicon substrate. [Internet] [Doctoral dissertation]. University of New South Wales; 2017. [cited 2019 Dec 08]. Available from: http://handle.unsw.edu.au/1959.4/57310 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43274/SOURCE02?view=true.

Council of Science Editors:

Wang L. High efficiency three terminal GaAsP/SiGe dual junction solar Cell on silicon substrate. [Doctoral Dissertation]. University of New South Wales; 2017. Available from: http://handle.unsw.edu.au/1959.4/57310 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43274/SOURCE02?view=true

University of New South Wales

5. Lin, Ziyun. Vertically structured Silicon quantum dot solar cell based on Molybdenum conductive contact substrate.

Degree: Photovoltaics & Renewable Energy Engineering, 2015, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/57241 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:42939/SOURCE02?view=true

► Si based quantum dot (QD) tandem cells have been considered as promising structures to obtain high energy conversion efficiencies through reducing thermalisation losses while still… (more)

▼ Si based quantum dot (QD) tandem cells have been considered as promising structures to obtain high energy conversion efficiencies through reducing thermalisation losses while still maintaining relatively low production costs by implementation of thin-film fabrication techniques. This type of solar cell is based on the idea that the bandgap of the Si based QD material can be engineered and applied for better utilization of the spectrum by stacking multiple cells on top of each other. A single-junction Si QD solar cell showing an open circuit voltage of 493 mV has been realized through sputtering and annealing alternating Si rich oxides (SRO) and silicon dioxide (SiO2) bilayers onto fused silica substrates, forming a mesa-type p-i-n structure. However, a current-crowding effect arises due to the thinness and highly resistive nature of this mesa-type structure, limiting the current from the device to a negligible level. In order to minimize the current-crowding effect, this thesis proposes a vertical structure for Si QD solar cells. This vertical structure is based on a conductive substrate, Molybdenum (Mo), to circumvent lateral carrier transport to contacts. A proof-of-concept study is demonstrated to discuss the feasibility of incorporating Mo into the proposed vertically structured device. Experimental work has been conducted to address two aspects: the suitability of Mo as a conductive substrate material; and the compatibility between Mo and Si QD materials subject to high temperature annealing processes. In addition, Raman spectroscopy is employed as a major diagnostic tool to examine the properties of Si QDs fabricated via the solid-phase method. A simulation approach for the Raman spectra based on the one-phonon confinement model (PCM) is applied for the deconvolution of different Raman patterns. The objective of this model is to extract Si QDs size distribution information and estimate the Si crystalline fractions. For the first time, the reliability of this Raman model is compared and verified through simulation of photoluminescent (PL) spectra of the investigated sample. The most important contributions and findings of this thesis are: • First demonstration of extraction of Si QDs size distribution information from a combination of Raman and PL simulations. • First study of annealing effects on Mo properties up to 1100 ℃. • Demonstration of the compatibility between Si QDs and Mo, as well as between Mo processed at high temperatures. • Demonstration of the compatibility of Mo thin films with various substrate types. • Development of effective approaches to protect Mo from oxidation at elevated temperatures. • Fabrication of the first vertically structured single-junction Si QD solar cell on a Mo conductive substrate, with 𝑉oc=200 mV and 𝐽sc=0.12 mA/cm2. Advisors/Committee Members: Ivan, Perez-Wurfl, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Gavin, Conibeer, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW.

Subjects/Keywords: Si based quantum dot (QD) tandem; Silicon quantum dot solar cell; Molybdenum conductive contact substrate

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APA (6^th Edition):

Lin, Z. (2015). Vertically structured Silicon quantum dot solar cell based on Molybdenum conductive contact substrate. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/57241 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:42939/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Lin, Ziyun. “Vertically structured Silicon quantum dot solar cell based on Molybdenum conductive contact substrate.” 2015. Doctoral Dissertation, University of New South Wales. Accessed December 08, 2019. http://handle.unsw.edu.au/1959.4/57241 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:42939/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Lin, Ziyun. “Vertically structured Silicon quantum dot solar cell based on Molybdenum conductive contact substrate.” 2015. Web. 08 Dec 2019.

Vancouver:

Lin Z. Vertically structured Silicon quantum dot solar cell based on Molybdenum conductive contact substrate. [Internet] [Doctoral dissertation]. University of New South Wales; 2015. [cited 2019 Dec 08]. Available from: http://handle.unsw.edu.au/1959.4/57241 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:42939/SOURCE02?view=true.

Council of Science Editors:

Lin Z. Vertically structured Silicon quantum dot solar cell based on Molybdenum conductive contact substrate. [Doctoral Dissertation]. University of New South Wales; 2015. Available from: http://handle.unsw.edu.au/1959.4/57241 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:42939/SOURCE02?view=true

University of New South Wales

6. Zhang, Bo. Germanium nanocrystals towards tandem solar cell applications: physics and technology.

Degree: Photovoltaics & Renewable Energy Engineering, 2011, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/51265 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9946/SOURCE02?view=true

► Germanium nanocrystals (Ge-ncs) embedded in amorphous SiO2 matrix have attracted much attention as a promising material for optoelectronic applications, such as thin film tandem solar… (more)

▼ Germanium nanocrystals (Ge-ncs) embedded in amorphous SiO2 matrix have attracted much attention as a promising material for optoelectronic applications, such as thin film tandem solar cells. The successful implementation of this nanostructure requires the development of fabrication techniques and the understanding of structural, optical and electrical properties of the produced nanocrystals.A comprehensive study of Ge-ncs grown in a superlattice structure is presented to demonstrate the feasibility of the superlattice for controlling nanocrystal size and engineering the electronic band gap of thin films. The structural properties of Ge-ncs were extensively studied by a series of characterization techniques including Raman spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). A kinetic model for the crystallization process in a superlattice has been proposed to explain the size control effect. Band gap engineering by tuning the superlattice structure was studied using optical absorption and photoluminescence measurements, and the experimental results were further compared with the results from theoretical calculation. Although a clear shift towards higher energies was observed in the absorption edge and luminescence peak, it remains ambiguous whether this could be attributed to the quantum confinement effect in Ge-ncs.A simple and silicon process-compatible technique is reported for the synthesis of Ge-ncs at temperatures below 400 °C, which is much lower than the typical growth temperatures. The Ge-ncs were found to form only within a temperature window between 350 °C and 420 °C. The underlying growth mechanism can be explained by a competitive process between Volmer-Weber growth and oxidation reaction. This technique has also been shown to be suitable for the fabrication of superlattice structure. Case studies on the stress development and optical absorption properties of the low temperature grown Ge-ncs are presented as well.Thin films composed of Ge-ncs in SiO2 matrix were prepared using the low temperature growth technique and their electrical properties were comprehensively studied. P-type behaviour was observed in the undoped thin films, which is attributed to the hole accumulation in Ge-ncs caused by the acceptor-like surface states. The charge transport is a thermally activated process involving charge hopping from one nanocrystal to its nearest neighbors. The p-type conductivity was further improved by the post-growth rapid thermal annealing and this can be explained by the modification of Ge-ncs’ surface structure and the reduction of defects in SiO2 matrix. The effects of impurities on the electrical conduction properties of Ge-nc thin films were studied as a starting point of future work on making n-type thin films and thereby the homojunction devices. Moreover, the electrical and photovoltaic properties of the heterojunction diodes employing the p-type Ge-nc thin films were… Advisors/Committee Members: Conibeer, Gavin, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Green, Martin, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Shrestha, Santosh, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW.

Subjects/Keywords: Tandem cell; Nanocrytals; Solar cell

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APA (6^th Edition):

Zhang, B. (2011). Germanium nanocrystals towards tandem solar cell applications: physics and technology. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/51265 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9946/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Zhang, Bo. “Germanium nanocrystals towards tandem solar cell applications: physics and technology.” 2011. Doctoral Dissertation, University of New South Wales. Accessed December 08, 2019. http://handle.unsw.edu.au/1959.4/51265 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9946/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Zhang, Bo. “Germanium nanocrystals towards tandem solar cell applications: physics and technology.” 2011. Web. 08 Dec 2019.

Vancouver:

Zhang B. Germanium nanocrystals towards tandem solar cell applications: physics and technology. [Internet] [Doctoral dissertation]. University of New South Wales; 2011. [cited 2019 Dec 08]. Available from: http://handle.unsw.edu.au/1959.4/51265 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9946/SOURCE02?view=true.

Council of Science Editors:

Zhang B. Germanium nanocrystals towards tandem solar cell applications: physics and technology. [Doctoral Dissertation]. University of New South Wales; 2011. Available from: http://handle.unsw.edu.au/1959.4/51265 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:9946/SOURCE02?view=true

7. Ali Ahmed, Ahmed. Développement des dispositifs à base des nanofils III-V pour le photovoltaïque : Developments of devices based on III-V nanowires for photovoltaics.

Degree: Docteur es, Electronique et Optoélectronique, Nano- et Microtechnologies, 2018, Paris Saclay

URL: http://www.theses.fr/2018SACLS496

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Depuis une vingtaine d’année les nanofils des semiconducteurs suscitent un intérêt majeur pour des applications diverses grâce à leurs propriétés optoélectroniques particulières. Dans le domaine… (more)

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Depuis une vingtaine d’année les nanofils des semiconducteurs suscitent un intérêt majeur pour des applications diverses grâce à leurs propriétés optoélectroniques particulières. Dans le domaine du photovoltaïque ils présentent aussi un atout majeur. La combinaison du fort coefficient d’absorption des semiconducteurs III-V et le faible coût des substrats de silicium permettraient la réalisation des cellules photovoltaïques à faible coût et à haut rendement. C’est dans ce contexte que s’est déroulé cette thèse qui visait le développement des dispositifs à base des nanofils III-V pour le photovoltaïque. Dans une première partie, les techniques de nanofabrication pour la réalisation des dispositifs à base d’ensemble de nanofils pour les cellules photovoltaïques sont présentées. Ensuite, la fabrication et la caractérisation de dispositifs à base d’ensembles de nanofils de GaN pour les applications photovoltaïque sont permis d’ouvrir la voie au développement des cellules solaires tandems d’InGaN⁄Si. Dans la suite des travaux on a étudié la croissance des nanofils de GaAs du type cœur-coquille sur Si ainsi que les étapes technologiques pour la fabrication des dispositifs à base d’ensemble de nanofils dans l’optique de préparer le terrain pour la réalisation d’une cellule tandem III-V sur Si. Enfin la croissance et la caractérisation électro-optique des nanofils contenant des jonctions axiales de GaAsP crus par la méthode VLS-EJM a permis de déterminer le type de dopage et l’optimisation de la structure en vue d’obtenir un effet photovoltaïque.

Over the past twenty years, semiconductor nanowires have attracted major interest for various applications thanks to their particular optoelectronic properties. The combination of the high absorption coefficient of the III-V semiconductors and the low cost of the silicon substrates would allow the realization of photovoltaic cells at low cost and high efficiency. It is in this context that this thesis was developed which focused on the development of devices based on III-V nanowires for photovoltaics. In a first part, the nanofabrication techniques for the realization of devices based on set of nanowires for photovoltaic cells are presented. Next, the fabrication and characterization of devices based on GaN nanowire arrays for photovoltaic applications is paving the way for the development of InGaN / Si tandem solar cells. In the following, we studied the growth of core-shell GaAs nanowires on Si as well as the technological steps for the fabrication of nanowire-based devices in order to prepare the ground for the realization of a tandem III-V cell on Si. Finally, the growth and electro-optical characterization of the nanowires containing axial junctions of raw GaAsP by the VLS-EJM method made it possible to determine the type of doping and the optimization of the structure in order to obtain a photovoltaic effect.

Advisors/Committee Members: Julien, François (thesis director), Tchernycheva, Maria (thesis director).

Subjects/Keywords: Semiconducteurs III-V; Nanofabrication; Photovoltaïques; GaN; Cellule solaire tandem InGaN/Si; Nanofil GaAs coeur/coquille; Mode VLS-EJM; Jonction axiale GaAsP; Semiconductors III-V; Nanofabrication; Photovoltaics; GaN; InGaN/Si tandem solar cell; GaAs nanowires core/shell; VLS-EJM mode; GaAsP axial junction

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APA (6^th Edition):

Ali Ahmed, A. (2018). Développement des dispositifs à base des nanofils III-V pour le photovoltaïque : Developments of devices based on III-V nanowires for photovoltaics. (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2018SACLS496

Chicago Manual of Style (16^th Edition):

Ali Ahmed, Ahmed. “Développement des dispositifs à base des nanofils III-V pour le photovoltaïque : Developments of devices based on III-V nanowires for photovoltaics.” 2018. Doctoral Dissertation, Paris Saclay. Accessed December 08, 2019. http://www.theses.fr/2018SACLS496.

MLA Handbook (7^th Edition):

Ali Ahmed, Ahmed. “Développement des dispositifs à base des nanofils III-V pour le photovoltaïque : Developments of devices based on III-V nanowires for photovoltaics.” 2018. Web. 08 Dec 2019.

Vancouver:

Ali Ahmed A. Développement des dispositifs à base des nanofils III-V pour le photovoltaïque : Developments of devices based on III-V nanowires for photovoltaics. [Internet] [Doctoral dissertation]. Paris Saclay; 2018. [cited 2019 Dec 08]. Available from: http://www.theses.fr/2018SACLS496.

Council of Science Editors:

Ali Ahmed A. Développement des dispositifs à base des nanofils III-V pour le photovoltaïque : Developments of devices based on III-V nanowires for photovoltaics. [Doctoral Dissertation]. Paris Saclay; 2018. Available from: http://www.theses.fr/2018SACLS496

Georgia Tech

8. Chen, Chia-Wei. Low cost high efficiency screen printed solar cells on Cz and epitaxial silicon.

Degree: PhD, Electrical and Computer Engineering, 2016, Georgia Tech

URL: http://hdl.handle.net/1853/54968

► The objective of this research is to achieve high-efficiency, low-cost, commercial-ready, screen-printed Silicon (Si) solar cells by reducing material costs and raising cell efficiencies. Two… (more)

Subjects/Keywords: Solar cell; Device fabrication; Epitaxial Si; Si

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APA (6^th Edition):

Chen, C. (2016). Low cost high efficiency screen printed solar cells on Cz and epitaxial silicon. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54968

Chicago Manual of Style (16^th Edition):

Chen, Chia-Wei. “Low cost high efficiency screen printed solar cells on Cz and epitaxial silicon.” 2016. Doctoral Dissertation, Georgia Tech. Accessed December 08, 2019. http://hdl.handle.net/1853/54968.

MLA Handbook (7^th Edition):

Chen, Chia-Wei. “Low cost high efficiency screen printed solar cells on Cz and epitaxial silicon.” 2016. Web. 08 Dec 2019.

Vancouver:

Chen C. Low cost high efficiency screen printed solar cells on Cz and epitaxial silicon. [Internet] [Doctoral dissertation]. Georgia Tech; 2016. [cited 2019 Dec 08]. Available from: http://hdl.handle.net/1853/54968.

Council of Science Editors:

Chen C. Low cost high efficiency screen printed solar cells on Cz and epitaxial silicon. [Doctoral Dissertation]. Georgia Tech; 2016. Available from: http://hdl.handle.net/1853/54968

McMaster University

9. Wood, Brendan. Fabrication and Characterization of GaAsP Nanowire-on-Silicon Tandem Photovoltaic Cells.

Degree: MASc, 2017, McMaster University

URL: http://hdl.handle.net/11375/22251

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One-dimensional vertical nanostructures, nanowire arrays, are investigated for applications in photovoltaics. Specifically, III-V core-shell p-i-n nanowire arrays are grown by molecular beam epitaxy on silicon… (more)

Subjects/Keywords: III-V; nanowire; photovoltaics; tandem cell

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APA (6^th Edition):

Wood, B. (2017). Fabrication and Characterization of GaAsP Nanowire-on-Silicon Tandem Photovoltaic Cells. (Masters Thesis). McMaster University. Retrieved from http://hdl.handle.net/11375/22251

Chicago Manual of Style (16^th Edition):

Wood, Brendan. “Fabrication and Characterization of GaAsP Nanowire-on-Silicon Tandem Photovoltaic Cells.” 2017. Masters Thesis, McMaster University. Accessed December 08, 2019. http://hdl.handle.net/11375/22251.

MLA Handbook (7^th Edition):

Wood, Brendan. “Fabrication and Characterization of GaAsP Nanowire-on-Silicon Tandem Photovoltaic Cells.” 2017. Web. 08 Dec 2019.

Vancouver:

Wood B. Fabrication and Characterization of GaAsP Nanowire-on-Silicon Tandem Photovoltaic Cells. [Internet] [Masters thesis]. McMaster University; 2017. [cited 2019 Dec 08]. Available from: http://hdl.handle.net/11375/22251.

Council of Science Editors:

Wood B. Fabrication and Characterization of GaAsP Nanowire-on-Silicon Tandem Photovoltaic Cells. [Masters Thesis]. McMaster University; 2017. Available from: http://hdl.handle.net/11375/22251

Australian National University

10. Wu, Yiliang. Towards Highly Efficient Perovskite/c-Si Monolithic Tandem Solar Cells .

Degree: 2018, Australian National University

URL: http://hdl.handle.net/1885/162745

► Solar photovoltaic technology based on crystalline silicon (c-Si) has dramatically reduced in cost in the last several years, to the point where the cost of… (more)

▼ Solar photovoltaic technology based on crystalline silicon (c-Si) has dramatically reduced in cost in the last several years, to the point where the cost of solar electricity now rivals that from coal power plants in many locations around the world. Increasing the power conversion efficiency is the most promising method to further reduce the cost. Since the efficiency of c-Si cells is approaching its theoretical limit, alternative approaches are required to enable step changes in efficiency. The rapid development of perovskite cells provides an opportunity to fabricate highly efficient perovskite/c-Si tandem cells, with an efficiency substantially greater than that possible with c-Si. One potential difficulty to achieve a highly efficient perovskite top cell for such a tandem device is the hysteresis behaviour usually displayed by these cells. It is necessary to understand the root causes of hysteresis in order to assess whether and to what extent the underlying mechanisms responsible will limit the efficiency or stability of the cells. We show for the first time, that the transient changes in terminal voltage and luminescent intensity do not follow the relationship that would be predicted by the generalised Planck radiation law. Using numerical simulation, we demonstrate that due to the accumulation of mobile ions at interfaces and together with significant defect related interface recombination, a resistive barrier to majority carrier flow at the interfaces between the perovskite film and the electron or hole transport layer can result in decoupling of the internal quasi-Fermi level separation and the externally measured voltage. Additional to the perovskite work, we report a specially designed homojunction c-Si solar cell architecture which provides a wide window for the perovskite top cell processing temperature of up to 400 °C, and which features passivation on both sides of the c-Si substrate using conventional, industry standard homojunction (diffused junction) technology. With a modified vacuum flash assisted perovskite deposition method, we demonstrate a 1 cm2 monolithic perovskite/c-Si tandem cell with 22.5% stabilized efficiency, which is the highest efficiency reported to date with a homojunction c-Si substrate. The unique design presented in this work opens up a new approach for achieving highly efficient monolithic perovskite/c-Si tandem devices. In the final work, we carefully investigate the monolithic tandems based on HJT (heterojunction technology) and PERT (passivated emitter rear totally diffused) structures recently published. Based on the simulation results, for both structures, we show that a significant increase in efficiency can be achieved by simply reducing the resistivity of the c-Si wafer and changing the wafer from n-type to p-type without changing…

Subjects/Keywords: perovskite; silicon; tandem; hysteresis; solar cell

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APA (6^th Edition):

Wu, Y. (2018). Towards Highly Efficient Perovskite/c-Si Monolithic Tandem Solar Cells . (Thesis). Australian National University. Retrieved from http://hdl.handle.net/1885/162745

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Wu, Yiliang. “Towards Highly Efficient Perovskite/c-Si Monolithic Tandem Solar Cells .” 2018. Thesis, Australian National University. Accessed December 08, 2019. http://hdl.handle.net/1885/162745.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Wu, Yiliang. “Towards Highly Efficient Perovskite/c-Si Monolithic Tandem Solar Cells .” 2018. Web. 08 Dec 2019.

Vancouver:

Wu Y. Towards Highly Efficient Perovskite/c-Si Monolithic Tandem Solar Cells . [Internet] [Thesis]. Australian National University; 2018. [cited 2019 Dec 08]. Available from: http://hdl.handle.net/1885/162745.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu Y. Towards Highly Efficient Perovskite/c-Si Monolithic Tandem Solar Cells . [Thesis]. Australian National University; 2018. Available from: http://hdl.handle.net/1885/162745

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

11. Soresi, Stefano. InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE.

Degree: Docteur es, Électronique, 2018, Montpellier

URL: http://www.theses.fr/2018MONTS021

► Cette thèse s’intéresse à l'intégration sur Si de cellules solaires III-V à simple et double jonction par épitaxie en phase vapeur aux organo-métalliques (MOVPE). Les… (more)

▼ Cette thèse s’intéresse à l'intégration sur Si de cellules solaires III-V à simple et double jonction par épitaxie en phase vapeur aux organo-métalliques (MOVPE). Les dispositifs photovoltaïques ont été réalisés avec des matériaux accordés sur InP. L'objectif était d'abord d'obtenir des dispositifs performants sur des substrats InP, puis de les intégrer sur une structure avec un paramètre de maille différent, en évaluant les effets sur les performances photovoltaïques. Ceci a nécessité la réalisation et l'optimisation de plusieurs étapes de fabrication.Tout d'abord, nous avons réalisé une cellule InP à simple jonction, qui peut correspondre à la cellule top dans notre structure tandem. Cela était également nécessaire pour mettre en place un processus de fabrication pour toutes les cellules suivantes. Les conditions de croissance ont été optimisées en profitant des techniques de caractérisation des matériaux telles que la XRD, l’analyse C-V et le SIMS. En optimisant les épaisseurs et les niveaux de dopage des différentes couches du dispositif, ainsi que le procédé en salle blanche, nous avons obtenu une efficacité de conversion de 12.9%, avec un FF de 84.3%. Nous avons démontré que l'utilisation d'une couche fenêtre en AlInAs au lieu de l’InP peut augmenter l'efficacité à 13.5%, malgré une légère réduction du FF (81.4%). La même procédure a ensuite été étendue à la réalisation d'une cellule solaire InGaAs comme cellule bottom du dispositif tandem. Nous avons obtenu un rendement de 11.4% et un FF de 74.5%.En parallèle, des jonctions tunnels capables de relier électriquement les deux sous-cellules dans un dispositif tandem ont été étudiées. En particulier, nous avons concentré notre attention sur les conditions de croissance de l'anode de la jonction, qui a été fabriquée en AlInAs et dopée avec le précurseur CBr4. Les réactions chimiques d’un tel précurseur avec le précurseur de l’Al et l’In nécessitaient une importante réduction de la température de croissance à 540 °C. En déterminant les effets des flux sur la composition et les niveaux de dopage du composé, nous avons obtenu un dopage élevé de +4x1019 cm-3. En obtenant un niveau équivalent pour la cathode InP:S, nous avons réalisé un dispositif présentant un Jp de 1570 A/cm2, capable de fonctionner dans des conditions de concentration solaire élevée. En combinant finalement les trois dispositifs présentés dans une cellule tandem, nous avons pu obtenir un rendement global de conversion de 18.3%, avec un FF de 83.9%.Un template approprié pour l'intégration III-V/Si a été déterminé en testant plusieurs possibilités fournies par différents partenaires. Les caractérisations XRD et AFM ont démontré qu'un template InP/GaP/Si fourni par la société NAsP était la meilleure option. Ceci a été confirmé par la croissance d'une cellule InP à simple jonction sur le template. La techno sur un substrat Si a été rendu possible en déplaçant le contact arrière de la cellule sur la face avant du dispositif, ce qui a nécessité la mise au point d'un ensemble approprié de masques… Advisors/Committee Members: Tournié, Eric (thesis director).

Subjects/Keywords: Cellules solaires tandem; III-V/Si; Movpe; Techno; InP/InGaAs; Jonctions tunnel; Tandem solar cells; III-V/Si; Movpe; Processing; InP/InGaAs; Tunnel junctions

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Soresi, S. (2018). InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE. (Doctoral Dissertation). Montpellier. Retrieved from http://www.theses.fr/2018MONTS021

Chicago Manual of Style (16^th Edition):

Soresi, Stefano. “InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE.” 2018. Doctoral Dissertation, Montpellier. Accessed December 08, 2019. http://www.theses.fr/2018MONTS021.

MLA Handbook (7^th Edition):

Soresi, Stefano. “InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE.” 2018. Web. 08 Dec 2019.

Vancouver:

Soresi S. InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE. [Internet] [Doctoral dissertation]. Montpellier; 2018. [cited 2019 Dec 08]. Available from: http://www.theses.fr/2018MONTS021.

Council of Science Editors:

Soresi S. InP based tandem solar cells integrated onto Si substrates by heteroepitaxial MOVPE : Cellules solaires tandem à base de InP intégrées sur substrats Si par hétéro-épitaxie MOVPE. [Doctoral Dissertation]. Montpellier; 2018. Available from: http://www.theses.fr/2018MONTS021

University of Iowa

12. Vrieze, Katherine Elna. Using mouse models to investigate the genetics of T-cell acute lymphocytic leukemia.

Degree: PhD, Molecular and Cellular Biology, 2011, University of Iowa

URL: https://ir.uiowa.edu/etd/2785

► T-cell acute lymphocytic leukemia (T-ALL) affects approximately 1,500 people per year in the United States, many of them children. The overall survival rate of… (more)

▼ T-cell acute lymphocytic leukemia (T-ALL) affects approximately 1,500 people per year in the United States, many of them children. The overall survival rate of children with T-ALL is greater than 80%. However, patients in a newly identified subtype called early T-cell progenitor acute lymphocytic leukemia (ETP-ALL), have a survival rate of only 19%. We have used the Sleeping Beauty (SB) transposon/transposase system in mice to model the T-ALL subtypes and identify cancer-causing mutations in the diseases. We have also developed three strains of NOTCH1 transgenic mice. NOTCH1 is a gene that is mutated in over 60% of cases of T-ALL, and these NOTCH1 transgenic mice could be used to better understand the role NOTCH1 plays in T-cell transformation. In order to model T-ALL subtypes we crossed SB mice to Vav-iCre mice, Lck-Cre mice, and CD4-Cre mice. This causes activation of SB in hematopoietic stem cells (HSCs), double negative (DN) thymocytes, and double positive (DP) T-cells, respectively. The Vav/SB tumors were characterized by mutations in Notch1, Ikzf1, and Rasgrp1. The predominant mutations found in the Lck/SB and CD4/SB models were Stat5b, Myc, Gfi1, Whsc1, and Jak1. Microarray was performed on a subset of samples. It was found that the CD4/SB tumors had expression profiles very similar to human ETP-ALL samples, and the Vav/SB tumors had expression profiles very similar to typical T-ALL samples. This data indicates that the cell-of-origin for ETP-ALL may not be an early T-cell progenitor, but instead may be a double positive or single positive T-cell. It also indicates that the cell-of-origin for typical T-ALL may be a stem/progenitor cell of the T-lineage. In order to better study the oncogenic potential of mutant NOTCH1 in T- ALL, we produced three NOTCH1 transgenic mouse strains that mimic the most common NOTCH1 mutations found in human T-ALL patients. These mutations are found in two distinct regions of the gene, the heterodimerization (HD) domain and the PEST domain and can occur alone or in combination. The strains also contain a lox-stop-lox (LSL) cassette in the first exon of NOTCH1, making expression Cre-dependent. Preliminary results from NOTCH1-HD-PEST (NHDP) transgenic mice indicate that, when crossed to Lck-Cre mice, offspring do not develop T- cell lymphoma. However, when NHDP/Lck-Cre mice are crossed to SB mice, the mutant NOTCH1 transgene accelerates a SB-induced model of T-cell lymphoma. Advisors/Committee Members: Dupuy, Adam J. (supervisor).

Subjects/Keywords: ETP-ALL; NOTCH1; T-ALL; T-cell Acute Lymphocytic Leukemia; Cell Biology

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APA (6^th Edition):

Vrieze, K. E. (2011). Using mouse models to investigate the genetics of T-cell acute lymphocytic leukemia. (Doctoral Dissertation). University of Iowa. Retrieved from https://ir.uiowa.edu/etd/2785

Chicago Manual of Style (16^th Edition):

Vrieze, Katherine Elna. “Using mouse models to investigate the genetics of T-cell acute lymphocytic leukemia.” 2011. Doctoral Dissertation, University of Iowa. Accessed December 08, 2019. https://ir.uiowa.edu/etd/2785.

MLA Handbook (7^th Edition):

Vrieze, Katherine Elna. “Using mouse models to investigate the genetics of T-cell acute lymphocytic leukemia.” 2011. Web. 08 Dec 2019.

Vancouver:

Vrieze KE. Using mouse models to investigate the genetics of T-cell acute lymphocytic leukemia. [Internet] [Doctoral dissertation]. University of Iowa; 2011. [cited 2019 Dec 08]. Available from: https://ir.uiowa.edu/etd/2785.

Council of Science Editors:

Vrieze KE. Using mouse models to investigate the genetics of T-cell acute lymphocytic leukemia. [Doctoral Dissertation]. University of Iowa; 2011. Available from: https://ir.uiowa.edu/etd/2785

University of New South Wales

13. Sheng, Rui. CH3NH3PbBr3 Perovskite Solar Cells for Tandem Application – Demonstrations and Characterizations.

Degree: ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, 2017, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/57574 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:44108/SOURCE02?view=true

► Perovskite solar cells based on organometal halides have experienced an unprecedentedly rapid development since 2012, when the first efficient perovskite-based solar device with solid-state structure… (more)

▼ Perovskite solar cells based on organometal halides have experienced an unprecedentedly rapid development since 2012, when the first efficient perovskite-based solar device with solid-state structure was reported. Increasing amount of research interests are focusing on characterizing material properties, developing deposition methods, resolving the instability and toxicity, as well as designing tandem structure. This thesis will present a comprehensive study of CH3NH3PbBr3 perovskite-based solar cell, including a novel deposition method for high efficiency CH3NH3PbBr3 solar cells, which shows substantial improvement over conventional one-step solution process, not only in the power conversion efficiency (1.7% vs 9.1%), but also in hysteresis. In the material characterization section, a study using one-photon and two-photon microscopy was conducted to reveal additional insight in the understanding of grain formation and carrier extraction. Then an investigation on fluorescence blinking in vapour-assisted deposited film was performed to study charge accumulation and migration. In the last part of this section, a dynamic aging study of vapour-assisted deposited film was carried out to demonstrate the spontaneously grain growing and defect generation. In this study, FLIM (Fluorescence lifetime imaging microscopy) was used to reveal the carrier lifetime of deposited film in a larger scale. The final aim of this thesis is to demonstrate the potential of using CH3NH3PbBr3 for tandem application. Therefore, a four-terminal tandem structure was demonstrated using spectrum-splitting approach. In this work, a great potential was shown when CH3NH3PbBr3 cell is coupled with a CH3NH3PbI3 cell; when a CH3NH3PbBr3 cell is coupled with a high efficiency PERL (passivated emitter rear locally diffused) silicon solar cell; and when a CH3NH3PbBr3 cell is coupled with a commercial screen printed silicon solar cell demonstrating power conversion efficiencies at 13.4%, 23.4% and 18.8% respectively. The last section of this thesis demonstrated a 2-terminal monolithic FTO/compact TiO2/mesoporous TiO2/CH3NH3PbI3/Spiro-OMeTAD/PEDOT: PSS/C60/CH3NH3PbBr3/Spiro-OMeTAD/Au solar cell by developing a novel composite carrier recombination stack which protects the underlying sub-cell and provides an interconnection with matching working functions. Remarkable voltage output at 1.96 V was obtained with the designed structure. In addition, simulation work shows the potential of this structure with further performance improvement to be expected. Advisors/Committee Members: Ho-Bailie, Anita, ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, Faculty of Engineering, UNSW, Green, Martin, ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, Faculty of Engineering, UNSW, Huang, Shujuan, ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, Faculty of Engineering, UNSW, Hao, Xiaojing, ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, Faculty of Engineering, UNSW.

Subjects/Keywords: large bandgap; perovskite solar cell; tandem solar cell

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6^th Edition):

Sheng, R. (2017). CH3NH3PbBr3 Perovskite Solar Cells for Tandem Application – Demonstrations and Characterizations. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/57574 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:44108/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Sheng, Rui. “CH3NH3PbBr3 Perovskite Solar Cells for Tandem Application – Demonstrations and Characterizations.” 2017. Doctoral Dissertation, University of New South Wales. Accessed December 08, 2019. http://handle.unsw.edu.au/1959.4/57574 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:44108/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Sheng, Rui. “CH3NH3PbBr3 Perovskite Solar Cells for Tandem Application – Demonstrations and Characterizations.” 2017. Web. 08 Dec 2019.

Vancouver:

Sheng R. CH3NH3PbBr3 Perovskite Solar Cells for Tandem Application – Demonstrations and Characterizations. [Internet] [Doctoral dissertation]. University of New South Wales; 2017. [cited 2019 Dec 08]. Available from: http://handle.unsw.edu.au/1959.4/57574 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:44108/SOURCE02?view=true.

Council of Science Editors:

Sheng R. CH3NH3PbBr3 Perovskite Solar Cells for Tandem Application – Demonstrations and Characterizations. [Doctoral Dissertation]. University of New South Wales; 2017. Available from: http://handle.unsw.edu.au/1959.4/57574 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:44108/SOURCE02?view=true

ETH Zürich

14. Pisoni, Stefano. Flexible perovskite solar cells and mini-modules for all-thin-film tandem photovoltaics.

Degree: 2019, ETH Zürich

URL: http://hdl.handle.net/20.500.11850/363523

► Organic-inorganic perovskite photovoltaic (PV) technology has achieved a record efficiency approaching 24 % in less than 10 years since its first reported application in PV… (more)

▼ Organic-inorganic perovskite photovoltaic (PV) technology has achieved a record efficiency approaching 24 % in less than 10 years since its first reported application in PV devices. The outstanding PV performances, high absorption coefficient, tunable band gap and low Urbach energy of this organic-inorganic material make perovskite solar cells (PSCs) ideal candidates as top cells in tandem applications. The development of tandem devices enables to improve the power conversion efficiency by reducing thermalization losses and by maximizing the absorption over the entire solar spectrum. All-thin-film perovskite/Cu(In,Ga)Se2 (CIGS) tandem solar cells in four-terminal configuration with efficiencies approaching 25 % have been demonstrated. In addition, PSCs can be efficiently prepared by low-temperature processes on flexible substrates, with reported efficiencies as high as 19 %. As well, CIGS solar cells can be developed on flexible substrates with high efficiencies (> 20 %). The development of flexible PV devices opens the way to high throughput roll-to-roll manufacturing with low embodied energy, and to new applications such as building- or transport-integrated products, as well as internet-of-thing based devices. This thesis focuses on the development of efficient near-infrared (NIR) transparent PSCs grown via low-temperature processing onto a flexible foil, which is commonly used to encapsulate flexible CIGS modules. These developments aim to lay the foundations to future manufacturing of flexible perovskite/CIGS tandem devices by direct integration of the two technologies via high-throughput roll-to-roll processing, considering that the employed flexible foil would avoid any additional costs for the top cell substrate. In addition, the upscaling potential of the developed flexible PSC structure is proved onto larger areas (from 0.15 cm2 to > 10 cm2) and highly accurate scribing methods are employed to realize monolithically-integrated flexible perovskite mini-modules. At first, a low-temperature PSC structure is developed based on an alternative highly NIR-transparent transparent conducting oxide (TCO), Al-doped ZnO (AZO). Thermally evaporated C60 is developed as low-temperature deposited electron transport layer (ETL) to efficiently extract electrons and mitigate hysteresis phenomenon in the flexible PSCs. Efficiencies above 13 % and 11 % are demonstrated on 0.15 and > 1 cm2 active areas, respectively. For tandem application, the gold rear electrode is substituted with a transparent one (appropriate combination of MoOx buffer layer and highly NIR-transparent In2O3:H TCO) to allow efficient transmission of low energy photons, resulting in a 12.2 % NIR-transparent flexible PSC with an average transmittance of 78 %, between 800-1000 nm. As a first proof-of-concept, a flexible perovskite/CIGS tandem cell with an efficiency > 18 % (higher than both single-junction devices) is demonstrated in four-terminal configuration. Through ultraviolet photoelectron spectroscopy (UPS) measurements,… Advisors/Committee Members: Tiwari, Ayodhya N., Wood, Vanessa, id_orcid0000-0001-6435-0227, Snaith, Henry J., Bücheler, Stephan.

Subjects/Keywords: photovoltaics; perovskite solar cell; flexible solar cell; thin film; tandem photovoltaics

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APA (6^th Edition):

Pisoni, S. (2019). Flexible perovskite solar cells and mini-modules for all-thin-film tandem photovoltaics. (Doctoral Dissertation). ETH Zürich. Retrieved from http://hdl.handle.net/20.500.11850/363523

Chicago Manual of Style (16^th Edition):

Pisoni, Stefano. “Flexible perovskite solar cells and mini-modules for all-thin-film tandem photovoltaics.” 2019. Doctoral Dissertation, ETH Zürich. Accessed December 08, 2019. http://hdl.handle.net/20.500.11850/363523.

MLA Handbook (7^th Edition):

Pisoni, Stefano. “Flexible perovskite solar cells and mini-modules for all-thin-film tandem photovoltaics.” 2019. Web. 08 Dec 2019.

Vancouver:

Pisoni S. Flexible perovskite solar cells and mini-modules for all-thin-film tandem photovoltaics. [Internet] [Doctoral dissertation]. ETH Zürich; 2019. [cited 2019 Dec 08]. Available from: http://hdl.handle.net/20.500.11850/363523.

Council of Science Editors:

Pisoni S. Flexible perovskite solar cells and mini-modules for all-thin-film tandem photovoltaics. [Doctoral Dissertation]. ETH Zürich; 2019. Available from: http://hdl.handle.net/20.500.11850/363523

15. Baranwal, Ajay Kumar. Enhancing Efficiency of TCO-less Tandem Dye Sensitized Solar Cells by Architecture Optimization : 透明導電膜を必要としないタンデム型色素増感太陽電池の構造最適化と効率の向上.

Degree: 博士（工学）, 2017, Kyushu Institute of Technology / 九州工業大学

URL: http://hdl.handle.net/10228/5723

► Extensive use of fossil fuels to circumvent our current energy needs and their limited availability along with climate change due to greenhouse effect lead to… (more)

▼ Extensive use of fossil fuels to circumvent our current energy needs and their limited availability along with climate change due to greenhouse effect lead to the serious thinking about the logical implementation of renewable energy resources. Photovoltaic technologies enables us the direct utilization of solar energy in the form of electrical energy. The clean energy generation using renewable energy resource must be accomplished considering the cost effectiveness with existing power generating technologies. Dye sensitized solar cells (DSSCs), kind of excitonic solar cells have attained the rampant popularity among the existing solar cells due to its ease of fabrication and cost effective nature. DSSCs have achieved comparable photoconversion efficiency as that of amorphous Si solar cell and are on the verge of commercialization. Apart from focus being directed to achieve the cost effectiveness and stability, further enhancement in the power conversion efficiency is inevitable to compete with traditional silicon based solar cells. In order to enhance photoconversion efficiency, tandem DSSCs has been approached where the two different cells having complementary absorption spectra are mechanically stacked. This thesis work is directed to avoid and alter the precious transparent conductive oxide (TCO) glass being commonly used in the conventional tandem device architectures aiming towards the fabrication of photon flux efficient novel tandem DSSCs architectures in combination with near infra-red (NIR) photon harvesting novel sensitizers. To begin with this compilation, focus has been centralized on the energy thrust promoted existing and current research status for solar cells in general and next generation solar cells in particular. The trend has followed the first ever demonstrated practical solar cell from bell lab to mature Si solar cell technology. The technology enhancement pave the way for thin film solar cell research.Diverse application of solar cell for indoor and outdoor applications have necessitated the flexible solar cell research. Dye sensitized solar cells (DSSCs) possess these properties and have drawn attention due to its environmental friendly properties. Limitation to achieve high performance for DSSCs are outlined along with the discussion about the need for extending the photon harvesting window.The photoconversion efficiency of DSSCs can be increased beyond the limit of a single cell by stacking multiple DSSCs with the complementary light absorption followed by photon harvesting. Conventional series connected and mechanically stacked tandem DSSCs bearing four TCO glass plates fabricated and its functioning was verified with external power conversion efficiency of 6.28% under simulated solar irradiation. Aiming towards reduction of fabrication cost, a novel tandem device architecture was proposed by stacking top cell TCO-DSSC and TCO-less back contact bottom cell DSSCs. This TCO-less bottom-cell DSSC was consisted of flexible and protected SUS metal mesh coated with dye adsorbed nanoporous TiO2… Advisors/Committee Members: 早瀬, 修二.

Subjects/Keywords: Tandem; DSSC; TCO-less; Solar cell; Back-contact

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APA (6^th Edition):

Baranwal, A. K. (2017). Enhancing Efficiency of TCO-less Tandem Dye Sensitized Solar Cells by Architecture Optimization : 透明導電膜を必要としないタンデム型色素増感太陽電池の構造最適化と効率の向上. (Thesis). Kyushu Institute of Technology / 九州工業大学. Retrieved from http://hdl.handle.net/10228/5723

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Baranwal, Ajay Kumar. “Enhancing Efficiency of TCO-less Tandem Dye Sensitized Solar Cells by Architecture Optimization : 透明導電膜を必要としないタンデム型色素増感太陽電池の構造最適化と効率の向上.” 2017. Thesis, Kyushu Institute of Technology / 九州工業大学. Accessed December 08, 2019. http://hdl.handle.net/10228/5723.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Baranwal, Ajay Kumar. “Enhancing Efficiency of TCO-less Tandem Dye Sensitized Solar Cells by Architecture Optimization : 透明導電膜を必要としないタンデム型色素増感太陽電池の構造最適化と効率の向上.” 2017. Web. 08 Dec 2019.

Vancouver:

Baranwal AK. Enhancing Efficiency of TCO-less Tandem Dye Sensitized Solar Cells by Architecture Optimization : 透明導電膜を必要としないタンデム型色素増感太陽電池の構造最適化と効率の向上. [Internet] [Thesis]. Kyushu Institute of Technology / 九州工業大学; 2017. [cited 2019 Dec 08]. Available from: http://hdl.handle.net/10228/5723.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Baranwal AK. Enhancing Efficiency of TCO-less Tandem Dye Sensitized Solar Cells by Architecture Optimization : 透明導電膜を必要としないタンデム型色素増感太陽電池の構造最適化と効率の向上. [Thesis]. Kyushu Institute of Technology / 九州工業大学; 2017. Available from: http://hdl.handle.net/10228/5723

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Washington

16. Williamson, Brian Wesley. BiI3: A Lower Toxicity Route to Tandem Solar Cells.

Degree: 2017, University of Washington

URL: http://hdl.handle.net/1773/40510

► Global population is expected to grow by more than 2 billion people by mid-century. This will result in a large increase in electricity demand. However,… (more)

Subjects/Keywords: BiI3; Solar cell; Solution processing; Tandem; Alternative energy; Chemical engineering

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APA (6^th Edition):

Williamson, B. W. (2017). BiI3: A Lower Toxicity Route to Tandem Solar Cells. (Thesis). University of Washington. Retrieved from http://hdl.handle.net/1773/40510

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Williamson, Brian Wesley. “BiI3: A Lower Toxicity Route to Tandem Solar Cells.” 2017. Thesis, University of Washington. Accessed December 08, 2019. http://hdl.handle.net/1773/40510.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Williamson, Brian Wesley. “BiI3: A Lower Toxicity Route to Tandem Solar Cells.” 2017. Web. 08 Dec 2019.

Vancouver:

Williamson BW. BiI3: A Lower Toxicity Route to Tandem Solar Cells. [Internet] [Thesis]. University of Washington; 2017. [cited 2019 Dec 08]. Available from: http://hdl.handle.net/1773/40510.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Williamson BW. BiI3: A Lower Toxicity Route to Tandem Solar Cells. [Thesis]. University of Washington; 2017. Available from: http://hdl.handle.net/1773/40510

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of Lund

17. Zeng, Xulu. InP/GaInP Nanowires for Tandem Junction Solar Cells : Growth, Processing, and Characterization.

Degree: 2018, University of Lund

URL: http://lup.lub.lu.se/record/29728ef0-320b-4815-a318-ff7bd2ca73a3 ; http://portal.research.lu.se/ws/files/43099533/Doctoral_thesis_Xulu_Zeng_LU.pdf

► Semiconductor nanowire solar cells have achieved comparable efficiency to their planar counterparts with substantial reduction of material consumption. Tandem geometry is a path towards even… (more)

▼ Semiconductor nanowire solar cells have achieved comparable efficiency to their planar counterparts with substantial reduction of material consumption. Tandem geometry is a path towards even higher efficiency. However, extensive studies are needed to reach this goal. My study started from the building blocks of the materials used in the upper cell, namely GaInP nanowires. The growth and doping control was the focus. We achieved well-controlled GaInP nanowire arrays and effective doping control of both n-type and p-type which is needed for use in the tandem junction solar cells.In a tandem junction solar cell, a tunnel junction which is virtually a degenerately doped pn-junction is a critical component. It provides the connection between adjacent subcells with low-resistivity and optical-transparency. With the knowledge obtained from our doping evaluation studies, we established the growth of InP/GaInP heterojunction nanowires with degenerate doping achieved at the material heterointerface which is the prerequisite for the tunneling effect. The tunnel diodes were realized in both forward (InP/GaInP) and reverse (GaInP/InP) directions. This enabled the tandem structures in the forward (InP subcell (bottom)/GaInP subcell (top)) and reverse (GaInP subcell (bottom)/InP subcell (top)) direction. (To enable the use of the reverse tandem structure, peel-off of the nanowires is needed since the higher-bandgap GaInP subcell should be on the top of the tandem structure in applications.)When the tunnel junction is incorporated into multiple pn-junction structures, the growth of the complex structure can bring extra influence to the entire device performance due to the VLS growth mechanism of nanowires. To simplify the diagnostics of tandem junction structures, we designed a test structure which connects a tunnel junction back to back with a p-i-n junction (namely a ‘n-pin’ structure). The n-pin structure has both ends of n-type, facilitating Ohmic contact formation. We found that a strong memory effect from the firstly-grown segment can non-intentionally dope the following segments. To overcome this challenge, compensation doping will probably be needed. The transfer of large area nanowire arrays to cheap substrates can significantly reduce the material cost. We developed an effective technology to embed the nanowire arrays into a polymer film and peel the film off from the native substrate. These studies pave the way to the realization of the first InP/GaInP nanowire tandem junction solar cell. The peel-off technique will also be of broad interests for reducing the fabrication cost of other nanowire devices, such as light emitting diodes and photodetectors.

Subjects/Keywords: Nanoteknik; nanowires; GaInP; InP; tandem; tunnel diode; solar cell

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APA (6^th Edition):

Zeng, X. (2018). InP/GaInP Nanowires for Tandem Junction Solar Cells : Growth, Processing, and Characterization. (Doctoral Dissertation). University of Lund. Retrieved from http://lup.lub.lu.se/record/29728ef0-320b-4815-a318-ff7bd2ca73a3 ; http://portal.research.lu.se/ws/files/43099533/Doctoral_thesis_Xulu_Zeng_LU.pdf

Chicago Manual of Style (16^th Edition):

Zeng, Xulu. “InP/GaInP Nanowires for Tandem Junction Solar Cells : Growth, Processing, and Characterization.” 2018. Doctoral Dissertation, University of Lund. Accessed December 08, 2019. http://lup.lub.lu.se/record/29728ef0-320b-4815-a318-ff7bd2ca73a3 ; http://portal.research.lu.se/ws/files/43099533/Doctoral_thesis_Xulu_Zeng_LU.pdf.

MLA Handbook (7^th Edition):

Zeng, Xulu. “InP/GaInP Nanowires for Tandem Junction Solar Cells : Growth, Processing, and Characterization.” 2018. Web. 08 Dec 2019.

Vancouver:

Zeng X. InP/GaInP Nanowires for Tandem Junction Solar Cells : Growth, Processing, and Characterization. [Internet] [Doctoral dissertation]. University of Lund; 2018. [cited 2019 Dec 08]. Available from: http://lup.lub.lu.se/record/29728ef0-320b-4815-a318-ff7bd2ca73a3 ; http://portal.research.lu.se/ws/files/43099533/Doctoral_thesis_Xulu_Zeng_LU.pdf.

Council of Science Editors:

Zeng X. InP/GaInP Nanowires for Tandem Junction Solar Cells : Growth, Processing, and Characterization. [Doctoral Dissertation]. University of Lund; 2018. Available from: http://lup.lub.lu.se/record/29728ef0-320b-4815-a318-ff7bd2ca73a3 ; http://portal.research.lu.se/ws/files/43099533/Doctoral_thesis_Xulu_Zeng_LU.pdf

University of New South Wales

18. Diaz, Martin. High-performance GaAsP/SiGe solar cell on silicon.

Degree: Photovoltaics & Renewable Energy Engineering, 2017, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/57404 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43368/SOURCE02?view=true

► Crystalline silicon remains the dominant technology of the existing commercial solar energy market as the cost of silicon continues to decrease. However, despite the abundance… (more)

▼ Crystalline silicon remains the dominant technology of the existing commercial solar energy market as the cost of silicon continues to decrease. However, despite the abundance and low cost of silicon, the progress of single-junction silicon solar cell efficiency has stagnated. To further reduce the levelized cost of energy higher efficiency must be achieved. In contrast, III-V based solar cells have steadily improved in performance over recent years while also reaching the highest efficiencies reported with multi-junction devices. The integration of high-performance III-V multi-junction and silicon based technologies is the next step for achieving high-efficiency solar cells at lower cost. This research accomplishes the merging of these two technologies while demonstrating high efficiencies rivaling current III-V on silicon technology. The approach used in this work utilizes a metamorphic silicon germanium buffer layer between the silicon platform and the epitaxial grown device layers. The result is a lattice-matched GaAsP/SiGe dual-junction solar cell device on a silicon substrate with a low dislocation interface between the silicon substrate and the active device layers. This device structure is achieved using a two-step growth process on silicon. The SiGe graded buffer layer and SiGe bottom cell is first grown using reduced pressure chemical vapor deposition followed by the growth of the III-V top cell layers using metal organic chemical vapor deposition. The fabrication of two-terminal dual-junction GaAsP/SiGe on silicon devices is carried out primarily with the process of photolithography. Through development and design improvements to this tandem solar cell device structure an efficiency of 18.9% under 1-sun is demonstrated. This device exhibits a JSC of 18.1 mA/cm2, a VOC of 1.45 V, and a FF of 72%. Analysis shows that the device is currently limited by the SiGe bottom cell and high series resistance lowering the fill factor. The existing limitations of this structure are addressed along with a pathway to the predicted 1-sun practical efficiency of 32.5%. Advisors/Committee Members: Barnett, Allen, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Perez-Wurfl, Ivan, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Opila, Robert, University of Delaware Electrical Engineering.

Subjects/Keywords: Multi-junction; Tandem; GaAsP/SiGe; Silicon; Solar cell

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APA (6^th Edition):

Diaz, M. (2017). High-performance GaAsP/SiGe solar cell on silicon. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/57404 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43368/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Diaz, Martin. “High-performance GaAsP/SiGe solar cell on silicon.” 2017. Doctoral Dissertation, University of New South Wales. Accessed December 08, 2019. http://handle.unsw.edu.au/1959.4/57404 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43368/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Diaz, Martin. “High-performance GaAsP/SiGe solar cell on silicon.” 2017. Web. 08 Dec 2019.

Vancouver:

Diaz M. High-performance GaAsP/SiGe solar cell on silicon. [Internet] [Doctoral dissertation]. University of New South Wales; 2017. [cited 2019 Dec 08]. Available from: http://handle.unsw.edu.au/1959.4/57404 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43368/SOURCE02?view=true.

Council of Science Editors:

Diaz M. High-performance GaAsP/SiGe solar cell on silicon. [Doctoral Dissertation]. University of New South Wales; 2017. Available from: http://handle.unsw.edu.au/1959.4/57404 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:43368/SOURCE02?view=true

NSYSU

19. Deng, Tsung-Wei. Fabrication and Characterization of III-Nitride Solar Cells.

Degree: Master, Physics, 2013, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0203113-201624

► In this thesis, first we use the program AMPS-1D (Analysis of Microelectronic and Photonic Structures) developed by the Pennsylvania State University to simulate the electrical… (more)

▼ In this thesis, first we use the program AMPS-1D (Analysis of Microelectronic and Photonic Structures) developed by the Pennsylvania State University to simulate the electrical performance of p-i-n InGaN solar cells. We change the Indium composition of the intrinsic layer from 5% to 35%. When the Indium composition is 20%, we get better energy conversion efficiency 5.777%. We have grown InGaN p-i-n solar cell on n-type silicon (111) wafer by plasma assisted molecular beam epitaxy (PA-MBE) with an Al diffused p-type surface. In order to reduce the lattice mismatch between Si and GaN, a thin AlN was grown as a buffer layer. When we grow AlN buffer layer, the surface of Si was diffused by Al to form p-type Si. It forms a p-n junction with n-type Si substrate. Then we grow n-type GaN layer, intrinsic InGaN layer and p-type GaN layer to form the structure of tandem solar cell. From XRD measurement, we can observe the sample quality and the indium composition of InGaN layer. Then we do process for samples. First, we define the size of mesa by photolithography, wet etching and inductive coupled plasma etching. Then we evaporate transparent conductive layer (TCL), top contact and rear contact by dual e-beam evaporator. We measure the I-V curve of the devices by the solar simulator under 1 sun AM1.5G condition to observe the open circuit voltage, short circuit current, fill factor and energy conversion efficiency. We measure the external quantum efficiency of the devices by incident photon conversion efficiency (IPCE) and observe the photoelectric conversion efficiency of the devices at different wavelength. By these measurements, we discuss the effect of the devices by different grid lines spacing of p-type contact and different thickness of substrate. For different grid lines spacing of p type metal contact, it affects the short circuit current density. It has higher short current density for the lower metal contact shading. The metal contact shading is lower, the external quantum efficiency is higher. The maximum external quantum efficiency is 33% at the wavelength of 690 nm. By decreasing the substrate thickness reduced the recombination of carriers, the open circuit voltage increase from 0.374 V to 0.494 V. Decreasing the substrate thickness also reduces the series resistance, it increases the fill factor. Advisors/Committee Members: Der-Jun Jang (chair), Shih-Wei Feng (chair), Yung-Sung Chen (chair), Li-Wei Tu (committee member), Wang-Chuang Kuo (chair).

Subjects/Keywords: plasma assisted molecular beam epitaxy; tandem solar cell; InGaN solar cell; Indium composition; simulation

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APA (6^th Edition):

Deng, T. (2013). Fabrication and Characterization of III-Nitride Solar Cells. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0203113-201624

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Deng, Tsung-Wei. “Fabrication and Characterization of III-Nitride Solar Cells.” 2013. Thesis, NSYSU. Accessed December 08, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0203113-201624.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Deng, Tsung-Wei. “Fabrication and Characterization of III-Nitride Solar Cells.” 2013. Web. 08 Dec 2019.

Vancouver:

Deng T. Fabrication and Characterization of III-Nitride Solar Cells. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Dec 08]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0203113-201624.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Deng T. Fabrication and Characterization of III-Nitride Solar Cells. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0203113-201624

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

NSYSU

20. Chen, Yue. Characterization of CuAlSe2/Si heterostructures grown by MBE.

Degree: Master, Materials and Optoelectronic Science, 2016, NSYSU

URL: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723116-125355

► We used molecular beam deposition system to grow CuAlSe2 (CAS) thin film. At first, CAS thin films were grown on glass substrates for adjusting chemical… (more)

Subjects/Keywords: molecular beam epitaxy; solar cell; CuAlSe2 /Si heterojunction; PC1D simulation tool

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APA (6^th Edition):

Chen, Y. (2016). Characterization of CuAlSe2/Si heterostructures grown by MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723116-125355

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Chen, Yue. “Characterization of CuAlSe2/Si heterostructures grown by MBE.” 2016. Thesis, NSYSU. Accessed December 08, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723116-125355.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Chen, Yue. “Characterization of CuAlSe2/Si heterostructures grown by MBE.” 2016. Web. 08 Dec 2019.

Vancouver:

Chen Y. Characterization of CuAlSe2/Si heterostructures grown by MBE. [Internet] [Thesis]. NSYSU; 2016. [cited 2019 Dec 08]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723116-125355.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Characterization of CuAlSe2/Si heterostructures grown by MBE. [Thesis]. NSYSU; 2016. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0723116-125355

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

University of New South Wales

21. Tao, Yuguo. Crystallisation studies of silicon thin films on glass for solar cell application.

Degree: Photovoltaics & Renewable Energy Engineering, 2011, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/51895 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:10564/SOURCE02?view=true

► Polycrystalline silicon (poly-Si) thin-film solar cell is one of promising technologies for low cost photovoltaic electricity generation. Such cells are made of a ~2 μm… (more)

Subjects/Keywords: Solar cell; Crystallisation; Si thin films on glass

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APA (6^th Edition):

Tao, Y. (2011). Crystallisation studies of silicon thin films on glass for solar cell application. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/51895 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:10564/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Tao, Yuguo. “Crystallisation studies of silicon thin films on glass for solar cell application.” 2011. Doctoral Dissertation, University of New South Wales. Accessed December 08, 2019. http://handle.unsw.edu.au/1959.4/51895 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:10564/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Tao, Yuguo. “Crystallisation studies of silicon thin films on glass for solar cell application.” 2011. Web. 08 Dec 2019.

Vancouver:

Tao Y. Crystallisation studies of silicon thin films on glass for solar cell application. [Internet] [Doctoral dissertation]. University of New South Wales; 2011. [cited 2019 Dec 08]. Available from: http://handle.unsw.edu.au/1959.4/51895 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:10564/SOURCE02?view=true.

Council of Science Editors:

Tao Y. Crystallisation studies of silicon thin films on glass for solar cell application. [Doctoral Dissertation]. University of New South Wales; 2011. Available from: http://handle.unsw.edu.au/1959.4/51895 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:10564/SOURCE02?view=true

University of New South Wales

22. Jia, Xuguang. All silicon tandem solar cell: optical characterization, practical energy conversion limitation and possible routes for improvement.

Degree: Photovoltaics & Renewable Energy Engineering, 2016, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/55817 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:39425/SOURCE02?view=true

► Silicon quantum dot (Si QD) embedded in its dielectric matrix is regarded as a promising structure for the next generation photovoltaics with high efficiency due… (more)

▼ Silicon quantum dot (Si QD) embedded in its dielectric matrix is regarded as a promising structure for the next generation photovoltaics with high efficiency due to its potential to tune the effective bandgap through quantum confinement which allows fabrication of optimized tandem devices. However, the properties of Si QD material should be further studied as the energy conversion efficiency of such Si QD based devices is relatively low so far. This thesis focuses on the optical characterization of Si QD materials and possible routes for the performance improvement of all Si tandem solar cells. Two comprehensive and non-destructive methods to extract optical constants of Si QD materials have been studied in this thesis. For the investigation of transmittance (T)/reflectance (R) spectra, an improved “Hishikawa approach” which combines the advantages of global fitting and point by point fitting is realized. For the application of ellipsometry, a homogeneous mixture model with Cody-Lorentz and Gaussian combined oscillator is developed to simulate the optical properties of Si QD materials. In addition, the photoluminescence (PL) spectra of Si QD films is discussed and a model based on spontaneous emission and the size distribution of the QDs is developed to fit the PL spectrum. With this model, the QD size and its distribution can be analysed quantitatively using the PL spectra only saving the need of time consuming and destructive characterization methods such as transmission electron microscopy (TEM). The optical bandgap can be extracted naturally from this PL model.The optical and electronic properties derived from the aforementioned approaches are then put into perspective by including them in the calculation of efficiencies in solar cells that could be fabricated with these films. The practical efficiency limit of Si QD material based double junction solar cell is studied. The simulation is based on material properties such as minority carrier lifetime and mobility rather than simple Shockley-Queisser assumptions. Simulation results show that the practical efficiency limit of a double junction cell (Si QD material with 1.6eV bandgap as top cell and 25% efficient c-Si PERL cell as the bottom cell) is around 32%. Based on this simulation, a roadmap to improve the performance of such tandem solar cells is outlined. Advisors/Committee Members: Conibeer, Gavin, Faculty of Engineering, UNSW, Perez-Wurfl , Ivan, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW, Puthen-Veettil, Binesh, Photovoltaics & Renewable Energy Engineering, Faculty of Engineering, UNSW.

Subjects/Keywords: thin film; Si quantum dots; Third generation solar cell

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APA (6^th Edition):

Jia, X. (2016). All silicon tandem solar cell: optical characterization, practical energy conversion limitation and possible routes for improvement. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/55817 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:39425/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Jia, Xuguang. “All silicon tandem solar cell: optical characterization, practical energy conversion limitation and possible routes for improvement.” 2016. Doctoral Dissertation, University of New South Wales. Accessed December 08, 2019. http://handle.unsw.edu.au/1959.4/55817 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:39425/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Jia, Xuguang. “All silicon tandem solar cell: optical characterization, practical energy conversion limitation and possible routes for improvement.” 2016. Web. 08 Dec 2019.

Vancouver:

Jia X. All silicon tandem solar cell: optical characterization, practical energy conversion limitation and possible routes for improvement. [Internet] [Doctoral dissertation]. University of New South Wales; 2016. [cited 2019 Dec 08]. Available from: http://handle.unsw.edu.au/1959.4/55817 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:39425/SOURCE02?view=true.

Council of Science Editors:

Jia X. All silicon tandem solar cell: optical characterization, practical energy conversion limitation and possible routes for improvement. [Doctoral Dissertation]. University of New South Wales; 2016. Available from: http://handle.unsw.edu.au/1959.4/55817 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:39425/SOURCE02?view=true

University of Kansas

23. Mitchell, Julie Lynne. Multi-Parameter Flow Cytometric Analysis of Ikaros Family Expression in Human T Cell Development and T-ALL.

Degree: PhD, Microbiology, Molecular Genetics & Immunology, 2016, University of Kansas

URL: http://hdl.handle.net/1808/23987

► The Ikaros family transcription factors are critical regulators of T cell development and leukemogenesis. Loss of function of all five family members leads to an… (more)

▼ The Ikaros family transcription factors are critical regulators of T cell development and leukemogenesis. Loss of function of all five family members leads to an early block in murine lymphocyte development, whereas reduced function results in the development of T cell leukemias. Loss of a single family member has only minimal affects on T cell development, suggesting compensating functions of the family members, and emphasizing a need to study expression and function of the whole Ikaros family. We analyzed the expression of all five family members in human and murine thymocytes as they progressed from the CD4–CD8– double negative (DN) to the CD4+CD8+ double positive (DP) developmental stages, and found differences in the expression of Helios and Eos mRNA between the two species. Further, whereas Ikaros and Aiolos mRNA levels increased in both species, protein levels only increased in murine thymocytes. These data suggest that regulation of Ikaros family expression during T cell development differed between the two species. To further examine expression of Ikaros family members during human T cell development, we used multi-parameter flow cytometry to identify subpopulations of human thymocytes. We defined seven populations of CD3– CD4+CD8– immature single positive (ISP) and CD3– DP cells to identify when TCRβ is expressed. We were able to delineate the pre-β-selection ISP1 and DP1 populations and the TCRβ expressing ISP2 and DP2 populations using expression of CD1a, CD28, and CD44. The ISP2 and DP2 populations had a higher percentage of proliferating cells, consistent with these being post-β-selection stages. Protein levels of Ikaros, Helios, and Aiolos all increased with β-selection, however this increase was transient for Ikaros and Helios levels. We further identified 22 populations of thymocytes that express CD3 and showed that CD4 expression is down-regulated after positive selection to create a CD8+CD4–/lo transitional single positive (TSP) developmental stage. Commitment to the CD8 T cell lineage occurs in TSP thymocytes and is marked by expression of CD27. Among CD4+ cells, expression of CD27 can first be seen in MSP2 CD4+ thymocytes, suggesting that commitment to the CD4 lineage occurs at this stage. Ikaros levels increased during the DP9 stage, and Helios and Aiolos expression increased in TSP thymocytes. The increase in Helios was transient, and Helios levels decreased as cells developed through the MSP CD4+ and MSP CD8+ stages. Aiolos levels increased in cells proceeding from the TSP to the MSP CD8+ stage. Within MSP CD4+ thymocytes, Aiolos levels increased transiently beginning in the MSP2 CD4+ thymocytes suggesting that increases in Aiolos protein are associated with CD4/CD8 lineage commitment. Pediatric T cell acute lymphoblastic leukemia (T-ALL) is a heterogeneous disease that develops as a result of clonal expansion of thymocyte populations that bypass regulatory selection steps. We analyzed expression of the Ikaros family members in the leukemic cells from pediatric T-ALL patients and compared them… Advisors/Committee Members: Yankee, Thomas M (advisor), Benedict, Stephen H (cmtemember), Parmely, Michael J (cmtemember), Peterson, Kenneth R (cmtemember), Stephens, Edward B (cmtemember).

Subjects/Keywords: Immunology; Aiolos; Helios; Ikaros; T-ALL; T cell development

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APA (6^th Edition):

Mitchell, J. L. (2016). Multi-Parameter Flow Cytometric Analysis of Ikaros Family Expression in Human T Cell Development and T-ALL. (Doctoral Dissertation). University of Kansas. Retrieved from http://hdl.handle.net/1808/23987

Chicago Manual of Style (16^th Edition):

Mitchell, Julie Lynne. “Multi-Parameter Flow Cytometric Analysis of Ikaros Family Expression in Human T Cell Development and T-ALL.” 2016. Doctoral Dissertation, University of Kansas. Accessed December 08, 2019. http://hdl.handle.net/1808/23987.

MLA Handbook (7^th Edition):

Mitchell, Julie Lynne. “Multi-Parameter Flow Cytometric Analysis of Ikaros Family Expression in Human T Cell Development and T-ALL.” 2016. Web. 08 Dec 2019.

Vancouver:

Mitchell JL. Multi-Parameter Flow Cytometric Analysis of Ikaros Family Expression in Human T Cell Development and T-ALL. [Internet] [Doctoral dissertation]. University of Kansas; 2016. [cited 2019 Dec 08]. Available from: http://hdl.handle.net/1808/23987.

Council of Science Editors:

Mitchell JL. Multi-Parameter Flow Cytometric Analysis of Ikaros Family Expression in Human T Cell Development and T-ALL. [Doctoral Dissertation]. University of Kansas; 2016. Available from: http://hdl.handle.net/1808/23987

Delft University of Technology

24. Gouw, M.R. Gene set–based decomposition of T-ALL with respect to normal T-cell implies two distinct T-ALL progression pathways :.

Degree: 2008, Delft University of Technology

URL: http://resolver.tudelft.nl/uuid:567ffb5a-2ba2-46eb-a383-d645848fa477

► In this investigation a gene set–based approach is used to compare T-ALL samples to a series of chronologically ordered T-cell development stages. These results revealed… (more)

Subjects/Keywords: T-ALL; T-cell Acute Lymphoblastic leukemia; gene sets; tumorigenesis; stemness

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APA (6^th Edition):

Gouw, M. R. (2008). Gene set–based decomposition of T-ALL with respect to normal T-cell implies two distinct T-ALL progression pathways :. (Masters Thesis). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:567ffb5a-2ba2-46eb-a383-d645848fa477

Chicago Manual of Style (16^th Edition):

Gouw, M R. “Gene set–based decomposition of T-ALL with respect to normal T-cell implies two distinct T-ALL progression pathways :.” 2008. Masters Thesis, Delft University of Technology. Accessed December 08, 2019. http://resolver.tudelft.nl/uuid:567ffb5a-2ba2-46eb-a383-d645848fa477.

MLA Handbook (7^th Edition):

Gouw, M R. “Gene set–based decomposition of T-ALL with respect to normal T-cell implies two distinct T-ALL progression pathways :.” 2008. Web. 08 Dec 2019.

Vancouver:

Gouw MR. Gene set–based decomposition of T-ALL with respect to normal T-cell implies two distinct T-ALL progression pathways :. [Internet] [Masters thesis]. Delft University of Technology; 2008. [cited 2019 Dec 08]. Available from: http://resolver.tudelft.nl/uuid:567ffb5a-2ba2-46eb-a383-d645848fa477.

Council of Science Editors:

Gouw MR. Gene set–based decomposition of T-ALL with respect to normal T-cell implies two distinct T-ALL progression pathways :. [Masters Thesis]. Delft University of Technology; 2008. Available from: http://resolver.tudelft.nl/uuid:567ffb5a-2ba2-46eb-a383-d645848fa477

University of Rochester

25. Wang, Pin-Yi. Genetic and developmental analysis of BCRIABL mediated lymphoid blast crisis.

Degree: PhD, 2009, University of Rochester

URL: http://hdl.handle.net/1802/6534

► Previous studies indicate that the initiation of BCR/ABL-mediated acute lymphoblastic leukemia (B-ALL) may be due to either developmental or genetic factors. Therefore, to better understand… (more)

▼ Previous studies indicate that the initiation of BCR/ABL-mediated acute lymphoblastic leukemia (B-ALL) may be due to either developmental or genetic factors. Therefore, to better understand the pathogenesis of this disease, we examined models in which these two parameters could be isolated and characterized. First, to investigate genetic influences, we examined the role of Ink4a/Arf or Arf mutations in the evolution of BCR/ABL-induced malignancy. Studies demonstrated that retroviral transduction of wild type donor cells with BCR/ABL resulted in the typical CML-like disease, whereas transduced mutant cells yielded an aggressive acute B-ALL. When purified populations of ProB cells from wild type vs. Arf-null mice were compared in similar experiments, both wild type and mutant cell types gave rise to B-ALL, but these were fundamental differences in the two forms of disease. Whereas B-ALL in the mutant background evolved rapidly (2-3 weeks) and was of polyclonal origin, wild type cells required a latency period of 6-8 weeks and were monoclonal, thus suggesting the acquisition of secondary mutations, which clearly indicates a genetic basis for lymphoid leukemia. Next, purified populations from HSC to PreB cells of Arf-null mice were transduced with BCR/ABL and transplanted into wild type recipients. Unlike developing B-ALL of the committed progenitors transplanted recipients, the HSC-transplanted mice showed bi-lineage (myeloid and lymphoid) engraftment consistent with a CML-like myeloproliferative disease, in which both B-ALL and myeloid phenotype could be separated and transferred to secondary recipients. These experiments clearly demonstrate that loss of Ink4a/Arf permits multiple stages of target populations to function as B-ALL leukemia-initiating cells. Subsequent analysis of B-ALL arising from the two different cell stages (HSC vs. ProB) showed distinct immunophenotypes, CFU abilities and kinetics of disease engraftment in the secondary recipients. Therefore, the molecular and phenotypical differences between stem cell and progenitor-derived B-ALL might reflect the distinct biological behaviors of the nature of this disease. Taken together, our studies indicate that both the developmental stage at which mutations occur, as well as the specific nature of genetic anomalies, can both contribute to the emergence of BCR/ABL mediated lymphoid leukemia.

Subjects/Keywords: Cancer; Leukemia; BCR-ABL; B-ALL; Stem cell

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APA (6^th Edition):

Wang, P. (2009). Genetic and developmental analysis of BCRIABL mediated lymphoid blast crisis. (Doctoral Dissertation). University of Rochester. Retrieved from http://hdl.handle.net/1802/6534

Chicago Manual of Style (16^th Edition):

Wang, Pin-Yi. “Genetic and developmental analysis of BCRIABL mediated lymphoid blast crisis.” 2009. Doctoral Dissertation, University of Rochester. Accessed December 08, 2019. http://hdl.handle.net/1802/6534.

MLA Handbook (7^th Edition):

Wang, Pin-Yi. “Genetic and developmental analysis of BCRIABL mediated lymphoid blast crisis.” 2009. Web. 08 Dec 2019.

Vancouver:

Wang P. Genetic and developmental analysis of BCRIABL mediated lymphoid blast crisis. [Internet] [Doctoral dissertation]. University of Rochester; 2009. [cited 2019 Dec 08]. Available from: http://hdl.handle.net/1802/6534.

Council of Science Editors:

Wang P. Genetic and developmental analysis of BCRIABL mediated lymphoid blast crisis. [Doctoral Dissertation]. University of Rochester; 2009. Available from: http://hdl.handle.net/1802/6534

University of New South Wales

26. Lan, Dongchen. Light absorption and emission in photovoltaic devices.

Degree: ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, 2015, University of New South Wales

URL: http://handle.unsw.edu.au/1959.4/55275 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37015/SOURCE02?view=true

► Historically, light absorption and emission has long been of broad interest in photovoltaic research, where these processes have been not only optimized for a high… (more)

▼ Historically, light absorption and emission has long been of broad interest in photovoltaic research, where these processes have been not only optimized for a high conversion efficiency but investigated to develop reliable optical characterization techniques. Although various aspects are being perfected, some issues remain unsolved due to their complexity; new technical issues also arise as solar cell technology evolves, where rapid adjustment is required to keep pace with the development.This thesis covers multiple topics relevant to the field, contributing to both the physics and characterization of solar cells. First, as a complement to Shockley’s p-n junction diode theory, an investigation of optoelectronic transport in arbitrary three-dimensional solar cell geometries shows that the ideal solar cell equation retains its traditional form in the presence of photon recycling, which however improves the dark saturation and light-generated currents. Then, taking note of developments over recent years, the applicability of spectral response analysis is reassessed as a means of determining cell optical and electrical properties, giving rise not only to extended applicability to front surface field cells, but new blue response and simplified infrared response analyses. After that, increased insights into band luminescence imaging of operational devices are provided through analytic study. With the dependence clearly illustrated, the present analytical approach not only simplifies results when local spatial uniformity is assumed, but allows more insights into the impact of lateral carrier injection as an operational feature increasingly evident in high efficiency solar cells. Finally, radiative coupling between the cells in tandem stacks is investigated as an increasingly important factor for tandem devices where energy conversion efficiency now exceeds 46%. The investigation not only extends earlier coupling models to account for both electroluminescent and photoluminescent coupling components, but provides more general insight into the impact on device performance and demonstrates an equivalent circuit approach as an efficient means of clarifying the complex interactions involved. Advisors/Committee Members: Green, Martin, ARC Centre of Excellence in Advanced Silicon Photovoltaics & Photonics, Faculty of Engineering, UNSW.

Subjects/Keywords: luminescent coupling; silicon solar cells; tandem solar cells; solar cell device physics; Solar Cell Device Physics; Silicon Solar Cells; Tandem Solar Cells

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APA (6^th Edition):

Lan, D. (2015). Light absorption and emission in photovoltaic devices. (Doctoral Dissertation). University of New South Wales. Retrieved from http://handle.unsw.edu.au/1959.4/55275 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37015/SOURCE02?view=true

Chicago Manual of Style (16^th Edition):

Lan, Dongchen. “Light absorption and emission in photovoltaic devices.” 2015. Doctoral Dissertation, University of New South Wales. Accessed December 08, 2019. http://handle.unsw.edu.au/1959.4/55275 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37015/SOURCE02?view=true.

MLA Handbook (7^th Edition):

Lan, Dongchen. “Light absorption and emission in photovoltaic devices.” 2015. Web. 08 Dec 2019.

Vancouver:

Lan D. Light absorption and emission in photovoltaic devices. [Internet] [Doctoral dissertation]. University of New South Wales; 2015. [cited 2019 Dec 08]. Available from: http://handle.unsw.edu.au/1959.4/55275 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37015/SOURCE02?view=true.

Council of Science Editors:

Lan D. Light absorption and emission in photovoltaic devices. [Doctoral Dissertation]. University of New South Wales; 2015. Available from: http://handle.unsw.edu.au/1959.4/55275 ; https://unsworks.unsw.edu.au/fapi/datastream/unsworks:37015/SOURCE02?view=true

Linköping University

27. Jazairli, Mohamad Al Kadi. Growth of Zinc Oxide Nanoparticles on Top of Polymers and Organic Small Molecules as a Transparent Cathode in Tandem Photovoltaic Device.

Degree: Science and Technology, 2008, Linköping University

URL: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11391

► Organic solar cells have caught considerable attention in the past few years due to their potential for providing environmentally safe, flexible, lightweight, inexpensive, and… (more)

Subjects/Keywords: Organics; Polymers; Electronics; Solar Cell; Photovoltaics; Tandem; small molecules; zinc oxide; ZnO; Electronics; Elektronik

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APA (6^th Edition):

Jazairli, M. A. K. (2008). Growth of Zinc Oxide Nanoparticles on Top of Polymers and Organic Small Molecules as a Transparent Cathode in Tandem Photovoltaic Device. (Thesis). Linköping University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11391

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Jazairli, Mohamad Al Kadi. “Growth of Zinc Oxide Nanoparticles on Top of Polymers and Organic Small Molecules as a Transparent Cathode in Tandem Photovoltaic Device.” 2008. Thesis, Linköping University. Accessed December 08, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11391.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Jazairli, Mohamad Al Kadi. “Growth of Zinc Oxide Nanoparticles on Top of Polymers and Organic Small Molecules as a Transparent Cathode in Tandem Photovoltaic Device.” 2008. Web. 08 Dec 2019.

Vancouver:

Jazairli MAK. Growth of Zinc Oxide Nanoparticles on Top of Polymers and Organic Small Molecules as a Transparent Cathode in Tandem Photovoltaic Device. [Internet] [Thesis]. Linköping University; 2008. [cited 2019 Dec 08]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11391.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jazairli MAK. Growth of Zinc Oxide Nanoparticles on Top of Polymers and Organic Small Molecules as a Transparent Cathode in Tandem Photovoltaic Device. [Thesis]. Linköping University; 2008. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11391

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Northeastern University

28. Doherty, Michael Francis. Proteomic analysis reveals CACN-1 as an integral component of the spliceosome in C. elegans.

Degree: MS, Department of Biology, 2013, Northeastern University

URL: http://hdl.handle.net/2047/d20003320

► Cell migration is an essential physiological activity that controls processes such as embryonic development and tissue formation in all animals. cacn-1 is a conserved, novel… (more)

Subjects/Keywords: C. elegans; cell migration; mass spectrometry; proteomics; RNAi; tandem affinity purification; Biology; Molecular Biology

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APA (6^th Edition):

Doherty, M. F. (2013). Proteomic analysis reveals CACN-1 as an integral component of the spliceosome in C. elegans. (Masters Thesis). Northeastern University. Retrieved from http://hdl.handle.net/2047/d20003320

Chicago Manual of Style (16^th Edition):

Doherty, Michael Francis. “Proteomic analysis reveals CACN-1 as an integral component of the spliceosome in C. elegans.” 2013. Masters Thesis, Northeastern University. Accessed December 08, 2019. http://hdl.handle.net/2047/d20003320.

MLA Handbook (7^th Edition):

Doherty, Michael Francis. “Proteomic analysis reveals CACN-1 as an integral component of the spliceosome in C. elegans.” 2013. Web. 08 Dec 2019.

Vancouver:

Doherty MF. Proteomic analysis reveals CACN-1 as an integral component of the spliceosome in C. elegans. [Internet] [Masters thesis]. Northeastern University; 2013. [cited 2019 Dec 08]. Available from: http://hdl.handle.net/2047/d20003320.

Council of Science Editors:

Doherty MF. Proteomic analysis reveals CACN-1 as an integral component of the spliceosome in C. elegans. [Masters Thesis]. Northeastern University; 2013. Available from: http://hdl.handle.net/2047/d20003320

Freie Universität Berlin

29. Schmid, Martina. Optics of the CuGaSe2 solar cell for highly efficient tandem concepts.

Degree: 2010, Freie Universität Berlin

URL: https://refubium.fu-berlin.de/handle/fub188/13775

► A principle aim of solar cell research lies in optimizing the exploitation of the incident solar light. Yet, for single junction solar cells there exists… (more)

▼ A principle aim of solar cell research lies in optimizing the exploitation of the incident solar light. Yet, for single junction solar cells there exists an efficiency limit as described by Shockley and Queisser. The only concept realized so far to overcome this threshold is – apart from concentration – the multijunction solar cell. However, any kind of multijunction design poses new challenges: The upper wide-gap solar cell (top cell) needs to show efficient light absorption in the short-wavelength region. At the same time sufficient transmission for long-wavelength light is required which then needs to be absorbed effectively by the low-gap bottom cell. In tandem solar cells a proper light management in top and bottom solar cell is of great importance. This work focuses on chalcopyrite-based tandem solar cells. For the wide- bandgap IR-transparent ZnO:Al/i-ZnO/CdS/CuGaSe2/SnO2:F/glass solar cell an optical model has been established. Starting from modeling each of the individual layers building the stack the optical behavior of the complete thin film system of the top cell could be described. Carefully selected layer combinations and comparison of experimental and calculated data allowed for the attribution of transmission losses to the distinct material properties. Defects in the absorber are of crucial importance but also free carrier absorption in the window and in the transparent back contact contribute significantly to optical losses. The quantification of the losses was achieved by calculating the effects of reduced top cell transmission on the photo current of a simplified bottom cell. An extension of the optical model allowed to calculate the effective absorption in the individual layers and to determine reflection losses at the interfaces. From these results an optimized top cell stack was derived which is characterized by A) simulation of the monolithic integration, B) reduced layer thicknesses wherever possible from the electrical point of view, C) addition of an antireflection coating and D) optimization of layer thicknesses with respect to anti-reflection behavior for the long-wavelength light. The optimized stack promises an increase in sub-gap transparency of the top cell from 60 to 80 % considering realistic material properties. Monolithically connecting a Cu(In,Ga)Se2 based bottom cell for simulating the chalcopyrite tandem, the fundamental requirement of current match for top and bottom cell was investigated. Suitable CuGaSe2/Cu(In,Ga)Se2 tandem combinations are identified and potential efficiencies calculated. They predict a maximum achievable tandem efficiency of 26 % in the case of realistic materials. Furthermore first experimental realizations of the optimized top cell stack were carried out. Their optical properties coincide with the model. Also measured and modeled photo current densities in a mechanically connected Cu(In,Ga)Se2 bottom cell shaded by various CuGaSe2 top cell stacks are in agreement within an error range of 5 %. A highest efficiency of 6.3 % was measured for the shaded… Advisors/Committee Members: n (gender), Prof. Dr. M.Ch. Lux-Steiner (firstReferee), Prof. PhD W.D. Brewer (furtherReferee).

Subjects/Keywords: tandem solar cell; chalcopyrites; optics; 500 Naturwissenschaften und Mathematik::530 Physik::530 Physik

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APA (6^th Edition):

Schmid, M. (2010). Optics of the CuGaSe2 solar cell for highly efficient tandem concepts. (Thesis). Freie Universität Berlin. Retrieved from https://refubium.fu-berlin.de/handle/fub188/13775

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16^th Edition):

Schmid, Martina. “Optics of the CuGaSe2 solar cell for highly efficient tandem concepts.” 2010. Thesis, Freie Universität Berlin. Accessed December 08, 2019. https://refubium.fu-berlin.de/handle/fub188/13775.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7^th Edition):

Schmid, Martina. “Optics of the CuGaSe2 solar cell for highly efficient tandem concepts.” 2010. Web. 08 Dec 2019.

Vancouver:

Schmid M. Optics of the CuGaSe2 solar cell for highly efficient tandem concepts. [Internet] [Thesis]. Freie Universität Berlin; 2010. [cited 2019 Dec 08]. Available from: https://refubium.fu-berlin.de/handle/fub188/13775.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Schmid M. Optics of the CuGaSe2 solar cell for highly efficient tandem concepts. [Thesis]. Freie Universität Berlin; 2010. Available from: https://refubium.fu-berlin.de/handle/fub188/13775

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Virginia Tech

30. Jain, Nikhil. Heterogeneous Integration of III-V Multijunction Solar Cells on Si Substrate: Cell Design and Modeling, Epitaxial Growth and Fabrication.

Degree: PhD, Electrical and Computer Engineering, 2015, Virginia Tech

URL: http://hdl.handle.net/10919/52045

► Achieving high efficiency solar cells and concurrently driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower… (more)

▼ Achieving high efficiency solar cells and concurrently driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of ~25%, III-V compound semiconductor based solar cells have steadily shown performance improvement at approximately 1% (absolute) increase per year, with a recent record efficiency of 46%. However, the expensive cost has made it challenging for the high efficiency III-V solar cells to compete with the mainstream Si technology. Novel approaches to lower down the cost per watt for III-V solar cells will position them to be among the key contenders in the renewable energy sector. Integration of such high-efficiency III-V multijunction solar cells on significantly cheaper and large area Si substrate has the potential to address the future LCOE roadmaps by unifying the high-efficiency merits of III-V materials with low-cost and abundance of Si. However, the 4% lattice mismatch, thermal mismatch polar-on-nonpolar epitaxy makes the direct growth of GaAs on Si challenging, rendering the metamorphic cell sensitive to dislocations. The focus of this dissertation is to systematically investigate heterogeneously integrated III-V multijunction solar cells on Si substrate. Utilizing a combination of comprehensive solar cell modeling and experimental techniques, we seek to better understand the material properties and correlate them to improve the device performance, with simulation providing a very valuable feedback loop. Key technical design considerations and optimal performance projections are discussed for integrating metamorphic III-V multijunction solar cells on Si substrates for 1-sun and concentrated photovoltaics. Key factors limiting the “GaAs-on-Si” cell performance are identified, and novel approaches focused on minimizing threading dislocation density are discussed. Finally, we discuss a novel epitaxial growth path utilizing high-quality and thin epitaxial Ge layers directly grown on Si substrate to create virtual “Ge-on-Si” substrate for III-V-on-Si multijunction photovoltaics. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III-V solar cell efficiencies, the future prospects for successful integration of III-V solar cell technology with Si substrate looks very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics. Advisors/Committee Members: Hudait, Mantu K. (committeechair), Lester, Luke F. (committee member), Heremans, Jean Joseph (committee member), Plassmann, Paul E. (committee member), Orlowski, Mariusz Kriysztof (committee member).

Subjects/Keywords: III–V-on-Si solar cells; multijunction solar cells; heterogeneous integration; solar cell modeling; GaAs-on-Si epitaxy; Ge-on-Si epitaxy

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APA (6^th Edition):

Jain, N. (2015). Heterogeneous Integration of III-V Multijunction Solar Cells on Si Substrate: Cell Design and Modeling, Epitaxial Growth and Fabrication. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/52045

Chicago Manual of Style (16^th Edition):

Jain, Nikhil. “Heterogeneous Integration of III-V Multijunction Solar Cells on Si Substrate: Cell Design and Modeling, Epitaxial Growth and Fabrication.” 2015. Doctoral Dissertation, Virginia Tech. Accessed December 08, 2019. http://hdl.handle.net/10919/52045.

MLA Handbook (7^th Edition):

Jain, Nikhil. “Heterogeneous Integration of III-V Multijunction Solar Cells on Si Substrate: Cell Design and Modeling, Epitaxial Growth and Fabrication.” 2015. Web. 08 Dec 2019.

Vancouver:

Jain N. Heterogeneous Integration of III-V Multijunction Solar Cells on Si Substrate: Cell Design and Modeling, Epitaxial Growth and Fabrication. [Internet] [Doctoral dissertation]. Virginia Tech; 2015. [cited 2019 Dec 08]. Available from: http://hdl.handle.net/10919/52045.

Council of Science Editors:

Jain N. Heterogeneous Integration of III-V Multijunction Solar Cells on Si Substrate: Cell Design and Modeling, Epitaxial Growth and Fabrication. [Doctoral Dissertation]. Virginia Tech; 2015. Available from: http://hdl.handle.net/10919/52045

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