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You searched for subject:(AlGaN GaN). Showing records 1 – 30 of 120 total matches.

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NSYSU

1. Jhuang, Shin-Hong. Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE.

Degree: Master, Physics, 2009, NSYSU

 In this thesis, we study the magnetro-transport properties of Fe-doped AlxGa1-xN/GaN heterostructure with different Al content by Shubnikov-de Haas measurements. On the samples KTH640(x=0.294)ãKTH643(x=0.344)ãKTH642(x=0.390)ãKTH644 (x=0.397),… (more)

Subjects/Keywords: SdH; GaN; AlGaN

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APA (6th Edition):

Jhuang, S. (2009). Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jhuang, Shin-Hong. “Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE.” 2009. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jhuang, Shin-Hong. “Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE.” 2009. Web. 22 Sep 2019.

Vancouver:

Jhuang S. Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jhuang S. Magneto-transport study of Fe-doped AlxGa1-xN/GaN with different Aluminum content grown by MOVPE. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0703109-150149

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

2. Hsin Lin, Wei. Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field.

Degree: Master, Physics, 2008, NSYSU

 We have fabricated the device of High Electron Mobility Transistor(HEMT) on Al0.18Ga0.82N/GaN heterostructures. The mobility of 2DEG of the AlGaN/GaN is 9328 cm2/Vs and carrier… (more)

Subjects/Keywords: SdH; AlGaN; GaN; 2DEG

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APA (6th Edition):

Hsin Lin, W. (2008). Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hsin Lin, Wei. “Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field.” 2008. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hsin Lin, Wei. “Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field.” 2008. Web. 22 Sep 2019.

Vancouver:

Hsin Lin W. Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hsin Lin W. Study of the device characterization in AlGaN/GaN nanowires at low temperature and high magnetic field. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718108-211011

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

3. Lang, Teemu. Fabrication of Heteroepitaxial Templates for GaN-Based Optoelectronic Devices.

Degree: 2007, Helsinki University of Technology

In this work the growth of GaN and AlGaN thin-films by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates is studied. The objective of the… (more)

Subjects/Keywords: MOCVD; GaN; AlGaN; threading dislocation; MOCVD; GaN; AlGaN; dislokaatio

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APA (6th Edition):

Lang, T. (2007). Fabrication of Heteroepitaxial Templates for GaN-Based Optoelectronic Devices. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2007/isbn9789512286126/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lang, Teemu. “Fabrication of Heteroepitaxial Templates for GaN-Based Optoelectronic Devices.” 2007. Thesis, Helsinki University of Technology. Accessed September 22, 2019. http://lib.tkk.fi/Diss/2007/isbn9789512286126/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lang, Teemu. “Fabrication of Heteroepitaxial Templates for GaN-Based Optoelectronic Devices.” 2007. Web. 22 Sep 2019.

Vancouver:

Lang T. Fabrication of Heteroepitaxial Templates for GaN-Based Optoelectronic Devices. [Internet] [Thesis]. Helsinki University of Technology; 2007. [cited 2019 Sep 22]. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512286126/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lang T. Fabrication of Heteroepitaxial Templates for GaN-Based Optoelectronic Devices. [Thesis]. Helsinki University of Technology; 2007. Available from: http://lib.tkk.fi/Diss/2007/isbn9789512286126/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. Lehmann, Jonathan. Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance : Electrical characterization of AlGaN/GaN heterostructures for power applications.

Degree: Docteur es, Nanoélectronique et nanotechnologie, 2015, Grenoble Alpes

Cette thèse s'inscrit dans le cadre du développement de transistors de puissance HEMT à base de nitrure de gallium au CEA. Les HEMT AlGaN/GaN sont… (more)

Subjects/Keywords: HEMT; AlGaN GaN; Caractérisation électrique; HEMT; AlGaN GaN; Electrical characterization; 620

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APA (6th Edition):

Lehmann, J. (2015). Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance : Electrical characterization of AlGaN/GaN heterostructures for power applications. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2015GREAT081

Chicago Manual of Style (16th Edition):

Lehmann, Jonathan. “Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance : Electrical characterization of AlGaN/GaN heterostructures for power applications.” 2015. Doctoral Dissertation, Grenoble Alpes. Accessed September 22, 2019. http://www.theses.fr/2015GREAT081.

MLA Handbook (7th Edition):

Lehmann, Jonathan. “Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance : Electrical characterization of AlGaN/GaN heterostructures for power applications.” 2015. Web. 22 Sep 2019.

Vancouver:

Lehmann J. Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance : Electrical characterization of AlGaN/GaN heterostructures for power applications. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2015. [cited 2019 Sep 22]. Available from: http://www.theses.fr/2015GREAT081.

Council of Science Editors:

Lehmann J. Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance : Electrical characterization of AlGaN/GaN heterostructures for power applications. [Doctoral Dissertation]. Grenoble Alpes; 2015. Available from: http://www.theses.fr/2015GREAT081


NSYSU

5. Wang, Ying-Chieh. Study of GaN and its alloys for spintronics and optoelectronics.

Degree: PhD, Physics, 2015, NSYSU

 The potential of wurtzite GaN and it alloys for applying in the spintronics and optoelectronics has been discussed in this dissertation. For the application of… (more)

Subjects/Keywords: MBE; GaN microdisk; spin-splitting; nano-device; AlGaN/GaN heterostructure; GaN

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APA (6th Edition):

Wang, Y. (2015). Study of GaN and its alloys for spintronics and optoelectronics. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134

Chicago Manual of Style (16th Edition):

Wang, Ying-Chieh. “Study of GaN and its alloys for spintronics and optoelectronics.” 2015. Doctoral Dissertation, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134.

MLA Handbook (7th Edition):

Wang, Ying-Chieh. “Study of GaN and its alloys for spintronics and optoelectronics.” 2015. Web. 22 Sep 2019.

Vancouver:

Wang Y. Study of GaN and its alloys for spintronics and optoelectronics. [Internet] [Doctoral dissertation]. NSYSU; 2015. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134.

Council of Science Editors:

Wang Y. Study of GaN and its alloys for spintronics and optoelectronics. [Doctoral Dissertation]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0707115-211134


The Ohio State University

6. Lee, Jaesun. Processing and characterization of advanced AlGaN/GaN heterojunction effect transistors.

Degree: PhD, Electrical Engineering, 2006, The Ohio State University

AlGaN/GaN high electron mobility transistors (HEMTs) have demonstrated high current levels, high breakdown voltages, and high frequency power performance due to its unique material properties.… (more)

Subjects/Keywords: AlGaN/GaN HEMTs

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APA (6th Edition):

Lee, J. (2006). Processing and characterization of advanced AlGaN/GaN heterojunction effect transistors. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1158695879

Chicago Manual of Style (16th Edition):

Lee, Jaesun. “Processing and characterization of advanced AlGaN/GaN heterojunction effect transistors.” 2006. Doctoral Dissertation, The Ohio State University. Accessed September 22, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1158695879.

MLA Handbook (7th Edition):

Lee, Jaesun. “Processing and characterization of advanced AlGaN/GaN heterojunction effect transistors.” 2006. Web. 22 Sep 2019.

Vancouver:

Lee J. Processing and characterization of advanced AlGaN/GaN heterojunction effect transistors. [Internet] [Doctoral dissertation]. The Ohio State University; 2006. [cited 2019 Sep 22]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1158695879.

Council of Science Editors:

Lee J. Processing and characterization of advanced AlGaN/GaN heterojunction effect transistors. [Doctoral Dissertation]. The Ohio State University; 2006. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1158695879


Wright State University

7. Langley, Derrick. AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling.

Degree: MSEgr, Electrical Engineering, 2007, Wright State University

 Investigation has been done on procedure, development, and verification of transistor topology for Aluminum-Gallium Nitride/Gallium Nitride (AlGaN/GaN) High-Electron Mobility Transistor (HEMTs). To date various models… (more)

Subjects/Keywords: AlGaN/GaN HEMT Transistor topology modeling

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APA (6th Edition):

Langley, D. (2007). AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling. (Masters Thesis). Wright State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=wright1177728294

Chicago Manual of Style (16th Edition):

Langley, Derrick. “AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling.” 2007. Masters Thesis, Wright State University. Accessed September 22, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=wright1177728294.

MLA Handbook (7th Edition):

Langley, Derrick. “AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling.” 2007. Web. 22 Sep 2019.

Vancouver:

Langley D. AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling. [Internet] [Masters thesis]. Wright State University; 2007. [cited 2019 Sep 22]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=wright1177728294.

Council of Science Editors:

Langley D. AlGaN/GaN HEMT Topology Investigation Using Measured Data and Device Modeling. [Masters Thesis]. Wright State University; 2007. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=wright1177728294


NSYSU

8. Chen, Yen-Liang. The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.

Degree: PhD, Physics, 2010, NSYSU

 The quality of GaN template layer plays a very important role in high electron mobility transistors. We proposed a special method in the growth of… (more)

Subjects/Keywords: nano wire; high mobility; MBE; GaN; AlGaN

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APA (6th Edition):

Chen, Y. (2010). The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827

Chicago Manual of Style (16th Edition):

Chen, Yen-Liang. “The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.” 2010. Doctoral Dissertation, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827.

MLA Handbook (7th Edition):

Chen, Yen-Liang. “The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy.” 2010. Web. 22 Sep 2019.

Vancouver:

Chen Y. The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. [Internet] [Doctoral dissertation]. NSYSU; 2010. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827.

Council of Science Editors:

Chen Y. The Study of High-Mobility AlxGa1-xN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy. [Doctoral Dissertation]. NSYSU; 2010. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0805110-191827


NSYSU

9. Chen , Pei-Hsien. Detection of pancreas cancer markers CEA and CA19-9 antigen by AlGaN/GaN high electron mobility transistor biosensor.

Degree: Master, Physics, 2017, NSYSU

AlGaN / GaN high electron mobility transistors (HEMTs) have the advantages of high electron mobility, high sensitivity, and high efficiency. Therefore, HEMTs are suitable for… (more)

Subjects/Keywords: CA19-9; biosensor; CEA; AlGaN/GaN HEMT

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APA (6th Edition):

Chen , P. (2017). Detection of pancreas cancer markers CEA and CA19-9 antigen by AlGaN/GaN high electron mobility transistor biosensor. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0408117-194004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen , Pei-Hsien. “Detection of pancreas cancer markers CEA and CA19-9 antigen by AlGaN/GaN high electron mobility transistor biosensor.” 2017. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0408117-194004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen , Pei-Hsien. “Detection of pancreas cancer markers CEA and CA19-9 antigen by AlGaN/GaN high electron mobility transistor biosensor.” 2017. Web. 22 Sep 2019.

Vancouver:

Chen P. Detection of pancreas cancer markers CEA and CA19-9 antigen by AlGaN/GaN high electron mobility transistor biosensor. [Internet] [Thesis]. NSYSU; 2017. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0408117-194004.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen P. Detection of pancreas cancer markers CEA and CA19-9 antigen by AlGaN/GaN high electron mobility transistor biosensor. [Thesis]. NSYSU; 2017. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0408117-194004

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

10. Gau, Ming-Horng. Growth and characterization of AlGaN/GaN heterostructures.

Degree: Master, Physics, 2004, NSYSU

 We will discuss the growth and characterization of AlxGa1-xN/GaN on sapphire substrate by plasma-assisted molecular beam epitaxy. By performing the X-ray diffraction (XRD) of our… (more)

Subjects/Keywords: GaN; MBE; AlGaN

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APA (6th Edition):

Gau, M. (2004). Growth and characterization of AlGaN/GaN heterostructures. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gau, Ming-Horng. “Growth and characterization of AlGaN/GaN heterostructures.” 2004. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gau, Ming-Horng. “Growth and characterization of AlGaN/GaN heterostructures.” 2004. Web. 22 Sep 2019.

Vancouver:

Gau M. Growth and characterization of AlGaN/GaN heterostructures. [Internet] [Thesis]. NSYSU; 2004. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gau M. Growth and characterization of AlGaN/GaN heterostructures. [Thesis]. NSYSU; 2004. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706104-140927

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

11. Avcu, Mustafa. Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench.

Degree: Docteur es, Electronique des Hautes Fréquences, Photonique et Systèmes, 2014, Limoges

Ce document porte sur le développement d’un nouveau banc de mesure pour la caractérisation de l’impédance thermique des HEMTs GaN. Le banc développé repose sur… (more)

Subjects/Keywords: Méthode 3ω; Impédance thermique; HEMT; AlGaN/GaN; InAlN/GaN; 3ω method; Thermal impedance; HEMT; AlGaN/GaN; InAlN/GaN; 621.381

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APA (6th Edition):

Avcu, M. (2014). Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench. (Doctoral Dissertation). Limoges. Retrieved from http://www.theses.fr/2014LIMO0048

Chicago Manual of Style (16th Edition):

Avcu, Mustafa. “Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench.” 2014. Doctoral Dissertation, Limoges. Accessed September 22, 2019. http://www.theses.fr/2014LIMO0048.

MLA Handbook (7th Edition):

Avcu, Mustafa. “Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench.” 2014. Web. 22 Sep 2019.

Vancouver:

Avcu M. Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench. [Internet] [Doctoral dissertation]. Limoges; 2014. [cited 2019 Sep 22]. Available from: http://www.theses.fr/2014LIMO0048.

Council of Science Editors:

Avcu M. Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω : Parasitic effects characterization in GaN HEMTs : development of 3ω measurement bench. [Doctoral Dissertation]. Limoges; 2014. Available from: http://www.theses.fr/2014LIMO0048


Université de Grenoble

12. Vittoz, Stéphane. Modélisation et caractérisation de capteurs mécaniques intégrés à base d'hétérostructures A1GaN/GaN pour les environnements hostiles : Modeling and test of integrated mechanical sensors based on AlGaN/GaN heterostructures for harsh environments.

Degree: Docteur es, Micro et nanoélectronique, 2011, Université de Grenoble

Certains domaines d'applications tels que l'aérospatial, l'automobile ou le forage de haute profondeur peuvent nécessiter la visualisation de certains paramètres physiques dans des environnements hostiles.… (more)

Subjects/Keywords: AlGaN/GaN; Pression; Déformation; HEMT; Conditions sévères; AlGaN/GaN; Pressure; Strain; HEMT; Harsh environment

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APA (6th Edition):

Vittoz, S. (2011). Modélisation et caractérisation de capteurs mécaniques intégrés à base d'hétérostructures A1GaN/GaN pour les environnements hostiles : Modeling and test of integrated mechanical sensors based on AlGaN/GaN heterostructures for harsh environments. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2011GRENT064

Chicago Manual of Style (16th Edition):

Vittoz, Stéphane. “Modélisation et caractérisation de capteurs mécaniques intégrés à base d'hétérostructures A1GaN/GaN pour les environnements hostiles : Modeling and test of integrated mechanical sensors based on AlGaN/GaN heterostructures for harsh environments.” 2011. Doctoral Dissertation, Université de Grenoble. Accessed September 22, 2019. http://www.theses.fr/2011GRENT064.

MLA Handbook (7th Edition):

Vittoz, Stéphane. “Modélisation et caractérisation de capteurs mécaniques intégrés à base d'hétérostructures A1GaN/GaN pour les environnements hostiles : Modeling and test of integrated mechanical sensors based on AlGaN/GaN heterostructures for harsh environments.” 2011. Web. 22 Sep 2019.

Vancouver:

Vittoz S. Modélisation et caractérisation de capteurs mécaniques intégrés à base d'hétérostructures A1GaN/GaN pour les environnements hostiles : Modeling and test of integrated mechanical sensors based on AlGaN/GaN heterostructures for harsh environments. [Internet] [Doctoral dissertation]. Université de Grenoble; 2011. [cited 2019 Sep 22]. Available from: http://www.theses.fr/2011GRENT064.

Council of Science Editors:

Vittoz S. Modélisation et caractérisation de capteurs mécaniques intégrés à base d'hétérostructures A1GaN/GaN pour les environnements hostiles : Modeling and test of integrated mechanical sensors based on AlGaN/GaN heterostructures for harsh environments. [Doctoral Dissertation]. Université de Grenoble; 2011. Available from: http://www.theses.fr/2011GRENT064


The Ohio State University

13. Song, Junghui. Fabrication and Characterization of AlGaN/GaN Heterostructure Devices for Hydrogen Gas Sensing at High Temperature.

Degree: PhD, Electrical and Computer Engineering, 2009, The Ohio State University

AlGaN/GaN heterostructure devices for hydrogen gas sensor applications at high temperature were fabricated and characterized. Over the large range of temperatures from 25°C to… (more)

Subjects/Keywords: Electrical Engineering; GaN; AlGaN/GaN; heterostructures; Gas sensors

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Song, J. (2009). Fabrication and Characterization of AlGaN/GaN Heterostructure Devices for Hydrogen Gas Sensing at High Temperature. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1250296506

Chicago Manual of Style (16th Edition):

Song, Junghui. “Fabrication and Characterization of AlGaN/GaN Heterostructure Devices for Hydrogen Gas Sensing at High Temperature.” 2009. Doctoral Dissertation, The Ohio State University. Accessed September 22, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1250296506.

MLA Handbook (7th Edition):

Song, Junghui. “Fabrication and Characterization of AlGaN/GaN Heterostructure Devices for Hydrogen Gas Sensing at High Temperature.” 2009. Web. 22 Sep 2019.

Vancouver:

Song J. Fabrication and Characterization of AlGaN/GaN Heterostructure Devices for Hydrogen Gas Sensing at High Temperature. [Internet] [Doctoral dissertation]. The Ohio State University; 2009. [cited 2019 Sep 22]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1250296506.

Council of Science Editors:

Song J. Fabrication and Characterization of AlGaN/GaN Heterostructure Devices for Hydrogen Gas Sensing at High Temperature. [Doctoral Dissertation]. The Ohio State University; 2009. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1250296506

14. Greco, Giuseppe. AlGaN/GaN heterostructures for enhancement mode transistors.

Degree: 2013, Università degli Studi di Catania

 Today the continuous increase of electric power demand is in our society a global concern. Hence, the reduction of the energy consumption has become the… (more)

Subjects/Keywords: Area 02 - Scienze fisiche; GaN,AlGaN/GaN heterostructures,HEMT,2DEG, p-GaN contacts

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APA (6th Edition):

Greco, G. (2013). AlGaN/GaN heterostructures for enhancement mode transistors. (Thesis). Università degli Studi di Catania. Retrieved from http://hdl.handle.net/10761/1347

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Greco, Giuseppe. “AlGaN/GaN heterostructures for enhancement mode transistors.” 2013. Thesis, Università degli Studi di Catania. Accessed September 22, 2019. http://hdl.handle.net/10761/1347.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Greco, Giuseppe. “AlGaN/GaN heterostructures for enhancement mode transistors.” 2013. Web. 22 Sep 2019.

Vancouver:

Greco G. AlGaN/GaN heterostructures for enhancement mode transistors. [Internet] [Thesis]. Università degli Studi di Catania; 2013. [cited 2019 Sep 22]. Available from: http://hdl.handle.net/10761/1347.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Greco G. AlGaN/GaN heterostructures for enhancement mode transistors. [Thesis]. Università degli Studi di Catania; 2013. Available from: http://hdl.handle.net/10761/1347

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

15. PANG, WEN-YUAN. Growth and characterization of GaN-based thin film grown by plasma-assisted molecular beam epitaxy for spintronics and optoelectronics application.

Degree: PhD, Physics, 2013, NSYSU

 In this dissertation, we studied the growth and characterization of GaN-based thin film grown by plasma-assisted molecular beam epitaxy for spintronics and optoelectronics application. In… (more)

Subjects/Keywords: zinc-blende GaN; GaN microdisk; quantum-ring interferometer; InGaN/GaN multiple quantum wells; semi-polar; AlGaN/GaN HEMT; Molecular Beam Epitaxy

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APA (6th Edition):

PANG, W. (2013). Growth and characterization of GaN-based thin film grown by plasma-assisted molecular beam epitaxy for spintronics and optoelectronics application. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706113-013907

Chicago Manual of Style (16th Edition):

PANG, WEN-YUAN. “Growth and characterization of GaN-based thin film grown by plasma-assisted molecular beam epitaxy for spintronics and optoelectronics application.” 2013. Doctoral Dissertation, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706113-013907.

MLA Handbook (7th Edition):

PANG, WEN-YUAN. “Growth and characterization of GaN-based thin film grown by plasma-assisted molecular beam epitaxy for spintronics and optoelectronics application.” 2013. Web. 22 Sep 2019.

Vancouver:

PANG W. Growth and characterization of GaN-based thin film grown by plasma-assisted molecular beam epitaxy for spintronics and optoelectronics application. [Internet] [Doctoral dissertation]. NSYSU; 2013. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706113-013907.

Council of Science Editors:

PANG W. Growth and characterization of GaN-based thin film grown by plasma-assisted molecular beam epitaxy for spintronics and optoelectronics application. [Doctoral Dissertation]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0706113-013907

16. Bertrand, Dimitri. Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium : Study of the mechanisms involved in the formation of ohmic contacts on power electronics transistors based on Gallium nitride.

Degree: Docteur es, Matériaux, mécanique, génie civil, électrochimie, 2016, Grenoble Alpes

Cette thèse s’inscrit dans le cadre du développement d’une filière de transistors de puissance à base de nitrure de Gallium au CEA-LETI. Ces transistors, en… (more)

Subjects/Keywords: Nitrure de Gallium; Hemt; AlGaN/GaN; Contact ohmique; Formation; Gallium nitride; High-Electron-Mobility Transistor; AlGaN/GaN; Ohmic contacts; Formation; 620

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APA (6th Edition):

Bertrand, D. (2016). Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium : Study of the mechanisms involved in the formation of ohmic contacts on power electronics transistors based on Gallium nitride. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2016GREAI060

Chicago Manual of Style (16th Edition):

Bertrand, Dimitri. “Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium : Study of the mechanisms involved in the formation of ohmic contacts on power electronics transistors based on Gallium nitride.” 2016. Doctoral Dissertation, Grenoble Alpes. Accessed September 22, 2019. http://www.theses.fr/2016GREAI060.

MLA Handbook (7th Edition):

Bertrand, Dimitri. “Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium : Study of the mechanisms involved in the formation of ohmic contacts on power electronics transistors based on Gallium nitride.” 2016. Web. 22 Sep 2019.

Vancouver:

Bertrand D. Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium : Study of the mechanisms involved in the formation of ohmic contacts on power electronics transistors based on Gallium nitride. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2016. [cited 2019 Sep 22]. Available from: http://www.theses.fr/2016GREAI060.

Council of Science Editors:

Bertrand D. Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium : Study of the mechanisms involved in the formation of ohmic contacts on power electronics transistors based on Gallium nitride. [Doctoral Dissertation]. Grenoble Alpes; 2016. Available from: http://www.theses.fr/2016GREAI060


Cornell University

17. Harvard, Ekaterina. Fabrication, Characterization, And Modeling Of Algan/Gan High Electron Mobility Transistors .

Degree: 2013, Cornell University

 Initially, advances in the high frequency markets were begun by work in Gallium Arsenide systems. In recent years, however, the focus has shifted to the… (more)

Subjects/Keywords: AlGaN/GaN HEMTs; III-V; passivation; fabrication; modeling; characterization

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APA (6th Edition):

Harvard, E. (2013). Fabrication, Characterization, And Modeling Of Algan/Gan High Electron Mobility Transistors . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/34001

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Harvard, Ekaterina. “Fabrication, Characterization, And Modeling Of Algan/Gan High Electron Mobility Transistors .” 2013. Thesis, Cornell University. Accessed September 22, 2019. http://hdl.handle.net/1813/34001.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Harvard, Ekaterina. “Fabrication, Characterization, And Modeling Of Algan/Gan High Electron Mobility Transistors .” 2013. Web. 22 Sep 2019.

Vancouver:

Harvard E. Fabrication, Characterization, And Modeling Of Algan/Gan High Electron Mobility Transistors . [Internet] [Thesis]. Cornell University; 2013. [cited 2019 Sep 22]. Available from: http://hdl.handle.net/1813/34001.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Harvard E. Fabrication, Characterization, And Modeling Of Algan/Gan High Electron Mobility Transistors . [Thesis]. Cornell University; 2013. Available from: http://hdl.handle.net/1813/34001

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

18. Chen, Yu-chih. Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE.

Degree: Master, Physics, 2009, NSYSU

 In order to develop high speed photo-electronic device, first, we grew one layer of GaN by MOPVE to decline lattice mismatch. Then we used PA-MBE… (more)

Subjects/Keywords: AlGaN/GaN; Low Temperature Hall Measurement; PA-MBE

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APA (6th Edition):

Chen, Y. (2009). Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701109-014158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Yu-chih. “Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE.” 2009. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701109-014158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Yu-chih. “Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE.” 2009. Web. 22 Sep 2019.

Vancouver:

Chen Y. Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701109-014158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen Y. Characterization of AlxGa1-xN/GaN grown on GaN-template by plasma-assisted MBE. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0701109-014158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

19. Chang, Yung-Shi. Study of AlGaN/GaN quantum structure fabricated by Focus ion beam.

Degree: Master, Physics, 2009, NSYSU

 We have observed a large spin-splitting in device made of AlxGa1-xN/GaN quantum wires. Based on this observation, we proposed a new spintronic application, the spin-hall… (more)

Subjects/Keywords: Focused Ion Beam; Quantum-ring; Spin-Hall; AlGaN; GaN

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APA (6th Edition):

Chang, Y. (2009). Study of AlGaN/GaN quantum structure fabricated by Focus ion beam. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-020527

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Yung-Shi. “Study of AlGaN/GaN quantum structure fabricated by Focus ion beam.” 2009. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-020527.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Yung-Shi. “Study of AlGaN/GaN quantum structure fabricated by Focus ion beam.” 2009. Web. 22 Sep 2019.

Vancouver:

Chang Y. Study of AlGaN/GaN quantum structure fabricated by Focus ion beam. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-020527.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang Y. Study of AlGaN/GaN quantum structure fabricated by Focus ion beam. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-020527

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

20. Gau, Ming-Horng. Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application.

Degree: PhD, Physics, 2009, NSYSU

 The design, fabrication, and characterizations of the spin-polarized AlxGa1-xN/GaN HEMT structure have been achieved for spintronic application. By band calculation within linear combination of atomic… (more)

Subjects/Keywords: GaN; AlGaN; 2DEG; MOVPE; MBE; HEMT; SdH; spin-splitting; spintronics; LCAO

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APA (6th Edition):

Gau, M. (2009). Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application. (Doctoral Dissertation). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631

Chicago Manual of Style (16th Edition):

Gau, Ming-Horng. “Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application.” 2009. Doctoral Dissertation, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631.

MLA Handbook (7th Edition):

Gau, Ming-Horng. “Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application.” 2009. Web. 22 Sep 2019.

Vancouver:

Gau M. Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application. [Internet] [Doctoral dissertation]. NSYSU; 2009. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631.

Council of Science Editors:

Gau M. Growth and characterizations of AlGaN/GaN HEMT structure for spintronic application. [Doctoral Dissertation]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0728109-122631


NSYSU

21. Wu, Chia-Chun. Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance.

Degree: Master, Physics, 2006, NSYSU

 Electroreflectance spectra of AlGaN/GaN heteostructure were measured for various biased voltage (Vbias). There are Franz-Keldysh oscillations (FKOs) exhibiting above band gap of AlGaN, and strength… (more)

Subjects/Keywords: GaN; 2DEG; FKOs; ER; AlGaN

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APA (6th Edition):

Wu, C. (2006). Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710106-205605

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wu, Chia-Chun. “Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance.” 2006. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710106-205605.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wu, Chia-Chun. “Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance.” 2006. Web. 22 Sep 2019.

Vancouver:

Wu C. Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance. [Internet] [Thesis]. NSYSU; 2006. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710106-205605.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wu C. Determination of polarization charge density on interface of AlGaN/GaN heterostructure by electroreflectance. [Thesis]. NSYSU; 2006. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0710106-205605

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

22. Chang, Zhi-jie. Transport Studies in AlxGa1-xN/GaN Quantum Well at Low Temperature and High Magnetic Field.

Degree: Master, Physics, 2006, NSYSU

 We have studied the electronic properties of AlxGa1-xN/GaN heterostructures by using Shubnikovâde Haas(SdH) measurement. Two SdH oscillations were detected on the sample of x=0.31, due… (more)

Subjects/Keywords: SdH; GaN; 2DEG; AlGaN; Hall

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APA (6th Edition):

Chang, Z. (2006). Transport Studies in AlxGa1-xN/GaN Quantum Well at Low Temperature and High Magnetic Field. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720106-002050

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Zhi-jie. “Transport Studies in AlxGa1-xN/GaN Quantum Well at Low Temperature and High Magnetic Field.” 2006. Thesis, NSYSU. Accessed September 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720106-002050.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Zhi-jie. “Transport Studies in AlxGa1-xN/GaN Quantum Well at Low Temperature and High Magnetic Field.” 2006. Web. 22 Sep 2019.

Vancouver:

Chang Z. Transport Studies in AlxGa1-xN/GaN Quantum Well at Low Temperature and High Magnetic Field. [Internet] [Thesis]. NSYSU; 2006. [cited 2019 Sep 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720106-002050.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang Z. Transport Studies in AlxGa1-xN/GaN Quantum Well at Low Temperature and High Magnetic Field. [Thesis]. NSYSU; 2006. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0720106-002050

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

23. Bishop, Christopher. Innovative sensors using nitride semiconductor materials for the detection of exhaust gases and water pollutants.

Degree: PhD, Electrical and Computer Engineering, 2015, Georgia Tech

 Microsensor technologies based on nitride semiconductor materials were developed as options for improved exhaust gas sensors in diesel exhaust systems. The main goals were to… (more)

Subjects/Keywords: Sensors; Semiconductors; GaN; BGaN; AlGaN; HEMT; Exhaust sensors

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APA (6th Edition):

Bishop, C. (2015). Innovative sensors using nitride semiconductor materials for the detection of exhaust gases and water pollutants. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/54898

Chicago Manual of Style (16th Edition):

Bishop, Christopher. “Innovative sensors using nitride semiconductor materials for the detection of exhaust gases and water pollutants.” 2015. Doctoral Dissertation, Georgia Tech. Accessed September 22, 2019. http://hdl.handle.net/1853/54898.

MLA Handbook (7th Edition):

Bishop, Christopher. “Innovative sensors using nitride semiconductor materials for the detection of exhaust gases and water pollutants.” 2015. Web. 22 Sep 2019.

Vancouver:

Bishop C. Innovative sensors using nitride semiconductor materials for the detection of exhaust gases and water pollutants. [Internet] [Doctoral dissertation]. Georgia Tech; 2015. [cited 2019 Sep 22]. Available from: http://hdl.handle.net/1853/54898.

Council of Science Editors:

Bishop C. Innovative sensors using nitride semiconductor materials for the detection of exhaust gases and water pollutants. [Doctoral Dissertation]. Georgia Tech; 2015. Available from: http://hdl.handle.net/1853/54898


Georgia Tech

24. Donmezer, Fatma. Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors.

Degree: PhD, Mechanical Engineering, 2013, Georgia Tech

 Understanding the magnitude of the temperature in AlGaN/GaN heterostructure fi eld e ffect transistors(HFETs) is a critical aspect of understanding their reliability and providing proper… (more)

Subjects/Keywords: AlGaN/GaN HFETs; Hotspot; Phonon transport; Electrothermal modeling

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APA (6th Edition):

Donmezer, F. (2013). Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/53139

Chicago Manual of Style (16th Edition):

Donmezer, Fatma. “Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors.” 2013. Doctoral Dissertation, Georgia Tech. Accessed September 22, 2019. http://hdl.handle.net/1853/53139.

MLA Handbook (7th Edition):

Donmezer, Fatma. “Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors.” 2013. Web. 22 Sep 2019.

Vancouver:

Donmezer F. Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors. [Internet] [Doctoral dissertation]. Georgia Tech; 2013. [cited 2019 Sep 22]. Available from: http://hdl.handle.net/1853/53139.

Council of Science Editors:

Donmezer F. Multiscale electro-thermal modeling of AlGaN/GaN heterostructure field effect transistors. [Doctoral Dissertation]. Georgia Tech; 2013. Available from: http://hdl.handle.net/1853/53139


University of Toledo

25. Jogi, Sreeram. Modelling of GaN Power Switches.

Degree: MS, Electrical Engineering, 2015, University of Toledo

 .The main goal of this work was to develop the necessary expertise and model various parameters and characteristics of gallium nitride power HEMT (High Electron… (more)

Subjects/Keywords: Electrical Engineering; AlGaN-GaN Modelling; Silvaco Atlas; HEMT

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APA (6th Edition):

Jogi, S. (2015). Modelling of GaN Power Switches. (Masters Thesis). University of Toledo. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=toledo1431717800

Chicago Manual of Style (16th Edition):

Jogi, Sreeram. “Modelling of GaN Power Switches.” 2015. Masters Thesis, University of Toledo. Accessed September 22, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1431717800.

MLA Handbook (7th Edition):

Jogi, Sreeram. “Modelling of GaN Power Switches.” 2015. Web. 22 Sep 2019.

Vancouver:

Jogi S. Modelling of GaN Power Switches. [Internet] [Masters thesis]. University of Toledo; 2015. [cited 2019 Sep 22]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=toledo1431717800.

Council of Science Editors:

Jogi S. Modelling of GaN Power Switches. [Masters Thesis]. University of Toledo; 2015. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=toledo1431717800


The Ohio State University

26. Hung, Ting-Hsiang. Novel High-k Dielectric Enhanced III-Nitride Devices.

Degree: PhD, Electrical and Computer Engineering, 2015, The Ohio State University

 This dissertation describes the design, fabrication and characterization of high-k dielectric enhanced Gallium Nitride (GaN)-based devices. Interface properties of atomic layer deposited (ALD) Aluminum Oxide… (more)

Subjects/Keywords: Electrical Engineering; GaN, HEMT, MISHEMT, MOSFET, ALD, Al2O3, InGaN, AlGaN, Ga2O3

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APA (6th Edition):

Hung, T. (2015). Novel High-k Dielectric Enhanced III-Nitride Devices. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1437684419

Chicago Manual of Style (16th Edition):

Hung, Ting-Hsiang. “Novel High-k Dielectric Enhanced III-Nitride Devices.” 2015. Doctoral Dissertation, The Ohio State University. Accessed September 22, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1437684419.

MLA Handbook (7th Edition):

Hung, Ting-Hsiang. “Novel High-k Dielectric Enhanced III-Nitride Devices.” 2015. Web. 22 Sep 2019.

Vancouver:

Hung T. Novel High-k Dielectric Enhanced III-Nitride Devices. [Internet] [Doctoral dissertation]. The Ohio State University; 2015. [cited 2019 Sep 22]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1437684419.

Council of Science Editors:

Hung T. Novel High-k Dielectric Enhanced III-Nitride Devices. [Doctoral Dissertation]. The Ohio State University; 2015. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1437684419


Vanderbilt University

27. Chen, Jin. Radiation response and reliability of AlGaN/GaN HEMTS.

Degree: MS, Electrical Engineering, 2013, Vanderbilt University

 Gallium Nitride (GaN)-based devices are used in space-based high power, high frequency applications due to high breakdown voltage and high carrier mobility and the large… (more)

Subjects/Keywords: reliability; radiation; HEMT; 1/f noise; AlGaN/GaN

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APA (6th Edition):

Chen, J. (2013). Radiation response and reliability of AlGaN/GaN HEMTS. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-06272013-203146/ ;

Chicago Manual of Style (16th Edition):

Chen, Jin. “Radiation response and reliability of AlGaN/GaN HEMTS.” 2013. Masters Thesis, Vanderbilt University. Accessed September 22, 2019. http://etd.library.vanderbilt.edu/available/etd-06272013-203146/ ;.

MLA Handbook (7th Edition):

Chen, Jin. “Radiation response and reliability of AlGaN/GaN HEMTS.” 2013. Web. 22 Sep 2019.

Vancouver:

Chen J. Radiation response and reliability of AlGaN/GaN HEMTS. [Internet] [Masters thesis]. Vanderbilt University; 2013. [cited 2019 Sep 22]. Available from: http://etd.library.vanderbilt.edu/available/etd-06272013-203146/ ;.

Council of Science Editors:

Chen J. Radiation response and reliability of AlGaN/GaN HEMTS. [Masters Thesis]. Vanderbilt University; 2013. Available from: http://etd.library.vanderbilt.edu/available/etd-06272013-203146/ ;


Université de Sherbrooke

28. Maher, Soundoss. Gravure de semiconducteurs à large bande interdite III-N pour les transistors Normally-OFF à base de GaN/Algan .

Degree: 2018, Université de Sherbrooke

 Le nitrure de gallium (GaN) est un semi-conducteur à large bande interdite utilisé en optoélectronique et dans les dispositifs de puissance et/ou haute fréquence. Les… (more)

Subjects/Keywords: GaN; AlGaN; Sélectivité; Plasma; Gravure humide et sèche; RIE-ICP

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APA (6th Edition):

Maher, S. (2018). Gravure de semiconducteurs à large bande interdite III-N pour les transistors Normally-OFF à base de GaN/Algan . (Masters Thesis). Université de Sherbrooke. Retrieved from http://hdl.handle.net/11143/14320

Chicago Manual of Style (16th Edition):

Maher, Soundoss. “Gravure de semiconducteurs à large bande interdite III-N pour les transistors Normally-OFF à base de GaN/Algan .” 2018. Masters Thesis, Université de Sherbrooke. Accessed September 22, 2019. http://hdl.handle.net/11143/14320.

MLA Handbook (7th Edition):

Maher, Soundoss. “Gravure de semiconducteurs à large bande interdite III-N pour les transistors Normally-OFF à base de GaN/Algan .” 2018. Web. 22 Sep 2019.

Vancouver:

Maher S. Gravure de semiconducteurs à large bande interdite III-N pour les transistors Normally-OFF à base de GaN/Algan . [Internet] [Masters thesis]. Université de Sherbrooke; 2018. [cited 2019 Sep 22]. Available from: http://hdl.handle.net/11143/14320.

Council of Science Editors:

Maher S. Gravure de semiconducteurs à large bande interdite III-N pour les transistors Normally-OFF à base de GaN/Algan . [Masters Thesis]. Université de Sherbrooke; 2018. Available from: http://hdl.handle.net/11143/14320

29. Mhedhbi, Sarra. Développement de composants flexibles en technologie hétérogène (GaN et graphène) pour des applications hautes fréquences : Development of flexible devices in heterogeneous technology (GaN and graphene) for high frequency applications.

Degree: Docteur es, Micro et nanotechnologie, acoustique et télécommunications, 2017, Université Lille I – Sciences et Technologies

Depuis quelques années, nous assistons à l’essor d’une nouvelle filière d’électronique basée sur des supports flexibles. De nombreuses applications difficilement atteignables par l’électronique classique sont… (more)

Subjects/Keywords: Électronique flexible; HEMTs AlGaN/GaN; GFETs; 621.381 528 4

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APA (6th Edition):

Mhedhbi, S. (2017). Développement de composants flexibles en technologie hétérogène (GaN et graphène) pour des applications hautes fréquences : Development of flexible devices in heterogeneous technology (GaN and graphene) for high frequency applications. (Doctoral Dissertation). Université Lille I – Sciences et Technologies. Retrieved from http://www.theses.fr/2017LIL10158

Chicago Manual of Style (16th Edition):

Mhedhbi, Sarra. “Développement de composants flexibles en technologie hétérogène (GaN et graphène) pour des applications hautes fréquences : Development of flexible devices in heterogeneous technology (GaN and graphene) for high frequency applications.” 2017. Doctoral Dissertation, Université Lille I – Sciences et Technologies. Accessed September 22, 2019. http://www.theses.fr/2017LIL10158.

MLA Handbook (7th Edition):

Mhedhbi, Sarra. “Développement de composants flexibles en technologie hétérogène (GaN et graphène) pour des applications hautes fréquences : Development of flexible devices in heterogeneous technology (GaN and graphene) for high frequency applications.” 2017. Web. 22 Sep 2019.

Vancouver:

Mhedhbi S. Développement de composants flexibles en technologie hétérogène (GaN et graphène) pour des applications hautes fréquences : Development of flexible devices in heterogeneous technology (GaN and graphene) for high frequency applications. [Internet] [Doctoral dissertation]. Université Lille I – Sciences et Technologies; 2017. [cited 2019 Sep 22]. Available from: http://www.theses.fr/2017LIL10158.

Council of Science Editors:

Mhedhbi S. Développement de composants flexibles en technologie hétérogène (GaN et graphène) pour des applications hautes fréquences : Development of flexible devices in heterogeneous technology (GaN and graphene) for high frequency applications. [Doctoral Dissertation]. Université Lille I – Sciences et Technologies; 2017. Available from: http://www.theses.fr/2017LIL10158

30. Gamarra, Piero. Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs).

Degree: Docteur es, Matériaux, 2013, Université Claude Bernard – Lyon I

Cette thèse est une contribution à l'étude de composés semiconducteurs InX Al1-X N à forte teneur en Indium. Ces composés présentent des propriétés très intéressantes… (more)

Subjects/Keywords: MOVPE; High Electron Mobility Transistors; InAlN; GaN; AlGaN; Nitrures; Croissance Epitaxiale; III-N; MOVPE; High Electron Mobility Transistors; InAlN; GaN; AlGaN; Nitride Semiconductors; Epitaxy; III-N; 530.4

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gamarra, P. (2013). Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs). (Doctoral Dissertation). Université Claude Bernard – Lyon I. Retrieved from http://www.theses.fr/2013LYO10009

Chicago Manual of Style (16th Edition):

Gamarra, Piero. “Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs).” 2013. Doctoral Dissertation, Université Claude Bernard – Lyon I. Accessed September 22, 2019. http://www.theses.fr/2013LYO10009.

MLA Handbook (7th Edition):

Gamarra, Piero. “Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs).” 2013. Web. 22 Sep 2019.

Vancouver:

Gamarra P. Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs). [Internet] [Doctoral dissertation]. Université Claude Bernard – Lyon I; 2013. [cited 2019 Sep 22]. Available from: http://www.theses.fr/2013LYO10009.

Council of Science Editors:

Gamarra P. Étude de composés semiconducteurs III-N à forte teneur en indium : application à l'optimisation des hétérostructures pour transistors à effet de champ piézo-électriques (HEMT) : Study of In-rich InX Al1-X N semiconductor compounds : growth and Optimization of In-containing Heterostructures for High Electron Mobility Transistors (HEMTs). [Doctoral Dissertation]. Université Claude Bernard – Lyon I; 2013. Available from: http://www.theses.fr/2013LYO10009

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