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You searched for subject:(ALD). Showing records 1 – 30 of 161 total matches.

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University of Debrecen

1. Szabó, Éva. Atomi rétegleválasztás (ALD) módszerrel készített vékonyrétegek analízise .

Degree: DE – Természettudományi és Technológiai Kar – Kémiai Intézet, 2014, University of Debrecen

 Munkám során az MTA Atommagkutató Intézetben a 2013-as év végén üzembe helyezett Beneq TFS-200 típusú atomi rétegleválasztó berendezés (ALD) működési paramétereinek optimalizálásával, Al2O3 vékonyrétegek előállításával… (more)

Subjects/Keywords: ALD; analízis

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APA (6th Edition):

Szabó, . (2014). Atomi rétegleválasztás (ALD) módszerrel készített vékonyrétegek analízise . (Thesis). University of Debrecen. Retrieved from http://hdl.handle.net/2437/191789

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Szabó, Éva. “Atomi rétegleválasztás (ALD) módszerrel készített vékonyrétegek analízise .” 2014. Thesis, University of Debrecen. Accessed March 22, 2019. http://hdl.handle.net/2437/191789.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Szabó, Éva. “Atomi rétegleválasztás (ALD) módszerrel készített vékonyrétegek analízise .” 2014. Web. 22 Mar 2019.

Vancouver:

Szabó . Atomi rétegleválasztás (ALD) módszerrel készített vékonyrétegek analízise . [Internet] [Thesis]. University of Debrecen; 2014. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/2437/191789.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Szabó . Atomi rétegleválasztás (ALD) módszerrel készített vékonyrétegek analízise . [Thesis]. University of Debrecen; 2014. Available from: http://hdl.handle.net/2437/191789

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

2. Fedorenko, Viktoriia. Atomic layer deposition on three dimensional silicon substrates for optical biosensors applications : Substrat silice 3D pour des applications biocapteur optique.

Degree: Docteur es, Chimie et physico-chimie des matériaux, 2017, Montpellier; Odessa I. I. Mechnikov State university

Ce manuscrit de thèse présente les recherches et les applications potentielles en tant que plate-forme (bio) capteur des couches minces conformes de ZnO et /… (more)

Subjects/Keywords: ALD; Biocapteur; Nanostructure; ALD; Biosensor; Nanostructure

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APA (6th Edition):

Fedorenko, V. (2017). Atomic layer deposition on three dimensional silicon substrates for optical biosensors applications : Substrat silice 3D pour des applications biocapteur optique. (Doctoral Dissertation). Montpellier; Odessa I. I. Mechnikov State university. Retrieved from http://www.theses.fr/2017MONTT183

Chicago Manual of Style (16th Edition):

Fedorenko, Viktoriia. “Atomic layer deposition on three dimensional silicon substrates for optical biosensors applications : Substrat silice 3D pour des applications biocapteur optique.” 2017. Doctoral Dissertation, Montpellier; Odessa I. I. Mechnikov State university. Accessed March 22, 2019. http://www.theses.fr/2017MONTT183.

MLA Handbook (7th Edition):

Fedorenko, Viktoriia. “Atomic layer deposition on three dimensional silicon substrates for optical biosensors applications : Substrat silice 3D pour des applications biocapteur optique.” 2017. Web. 22 Mar 2019.

Vancouver:

Fedorenko V. Atomic layer deposition on three dimensional silicon substrates for optical biosensors applications : Substrat silice 3D pour des applications biocapteur optique. [Internet] [Doctoral dissertation]. Montpellier; Odessa I. I. Mechnikov State university; 2017. [cited 2019 Mar 22]. Available from: http://www.theses.fr/2017MONTT183.

Council of Science Editors:

Fedorenko V. Atomic layer deposition on three dimensional silicon substrates for optical biosensors applications : Substrat silice 3D pour des applications biocapteur optique. [Doctoral Dissertation]. Montpellier; Odessa I. I. Mechnikov State university; 2017. Available from: http://www.theses.fr/2017MONTT183


University of Texas – Austin

3. Yum, Jung Hwan, 1978-. Atomic layer deposited beryllium oxide as a gate dielectric or interfacial Layer for Si and III-V MOS devices.

Degree: Electrical and Computer Engineering, 2012, University of Texas – Austin

 The continuous improvement in the semiconductor industry has been successfully achieved by the reducing dimensions of CMOS (complementary metal oxide semiconductor) technology. For the last… (more)

Subjects/Keywords: ALD beryllium oxide; ALD BeO; Dimethylberyllium; Diethylberyllium

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APA (6th Edition):

Yum, Jung Hwan, 1. (2012). Atomic layer deposited beryllium oxide as a gate dielectric or interfacial Layer for Si and III-V MOS devices. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/ETD-UT-2012-05-4987

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yum, Jung Hwan, 1978-. “Atomic layer deposited beryllium oxide as a gate dielectric or interfacial Layer for Si and III-V MOS devices.” 2012. Thesis, University of Texas – Austin. Accessed March 22, 2019. http://hdl.handle.net/2152/ETD-UT-2012-05-4987.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yum, Jung Hwan, 1978-. “Atomic layer deposited beryllium oxide as a gate dielectric or interfacial Layer for Si and III-V MOS devices.” 2012. Web. 22 Mar 2019.

Vancouver:

Yum, Jung Hwan 1. Atomic layer deposited beryllium oxide as a gate dielectric or interfacial Layer for Si and III-V MOS devices. [Internet] [Thesis]. University of Texas – Austin; 2012. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/2152/ETD-UT-2012-05-4987.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yum, Jung Hwan 1. Atomic layer deposited beryllium oxide as a gate dielectric or interfacial Layer for Si and III-V MOS devices. [Thesis]. University of Texas – Austin; 2012. Available from: http://hdl.handle.net/2152/ETD-UT-2012-05-4987

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Chicago

4. Huang, Su. Improving Polymethyl Methacrylate Resin Using a Novel Nano-Ceramic Coating.

Degree: 2017, University of Illinois – Chicago

 Poly (methyl methacrylate) (PMMA) has been broadly applied in dental implant supported restorations and removable dentures. These prostheses are used by 10’s of millions of… (more)

Subjects/Keywords: PMMA; TiO2; ALD

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APA (6th Edition):

Huang, S. (2017). Improving Polymethyl Methacrylate Resin Using a Novel Nano-Ceramic Coating. (Thesis). University of Illinois – Chicago. Retrieved from http://hdl.handle.net/10027/22059

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Su. “Improving Polymethyl Methacrylate Resin Using a Novel Nano-Ceramic Coating.” 2017. Thesis, University of Illinois – Chicago. Accessed March 22, 2019. http://hdl.handle.net/10027/22059.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Su. “Improving Polymethyl Methacrylate Resin Using a Novel Nano-Ceramic Coating.” 2017. Web. 22 Mar 2019.

Vancouver:

Huang S. Improving Polymethyl Methacrylate Resin Using a Novel Nano-Ceramic Coating. [Internet] [Thesis]. University of Illinois – Chicago; 2017. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/10027/22059.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang S. Improving Polymethyl Methacrylate Resin Using a Novel Nano-Ceramic Coating. [Thesis]. University of Illinois – Chicago; 2017. Available from: http://hdl.handle.net/10027/22059

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

5. Chen, Da-Ching. Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide.

Degree: Master, Electrical Engineering, 2009, NSYSU

 Due to the high electron mobility compared with Si, III-V compound semiconductors (GaAs) has been applied widely for high-speed devices. The titanium oxide (TiO2) has… (more)

Subjects/Keywords: TiO2; GaAs; ALD

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APA (6th Edition):

Chen, D. (2009). Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Da-Ching. “Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide.” 2009. Thesis, NSYSU. Accessed March 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Da-Ching. “Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide.” 2009. Web. 22 Mar 2019.

Vancouver:

Chen D. Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide. [Internet] [Thesis]. NSYSU; 2009. [cited 2019 Mar 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen D. Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

6. Päiväsaari, Jani. Atomic Layer Deposition of Lanthanide Oxide Thin Films.

Degree: 2006, Helsinki University of Technology

This thesis describes the processing of thin films of lanthanide (Ln) oxides by atomic layer deposition (ALD) technique. Deposition of all binary lanthanide oxides was… (more)

Subjects/Keywords: precursors; rare earth oxides; ALD

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APA (6th Edition):

Päiväsaari, J. (2006). Atomic Layer Deposition of Lanthanide Oxide Thin Films. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2006/isbn9512281635/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Päiväsaari, Jani. “Atomic Layer Deposition of Lanthanide Oxide Thin Films.” 2006. Thesis, Helsinki University of Technology. Accessed March 22, 2019. http://lib.tkk.fi/Diss/2006/isbn9512281635/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Päiväsaari, Jani. “Atomic Layer Deposition of Lanthanide Oxide Thin Films.” 2006. Web. 22 Mar 2019.

Vancouver:

Päiväsaari J. Atomic Layer Deposition of Lanthanide Oxide Thin Films. [Internet] [Thesis]. Helsinki University of Technology; 2006. [cited 2019 Mar 22]. Available from: http://lib.tkk.fi/Diss/2006/isbn9512281635/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Päiväsaari J. Atomic Layer Deposition of Lanthanide Oxide Thin Films. [Thesis]. Helsinki University of Technology; 2006. Available from: http://lib.tkk.fi/Diss/2006/isbn9512281635/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

7. Kuo, Ting-Huang. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.

Degree: Master, Electrical Engineering, 2008, NSYSU

 In this study, the characteristics of atomic layer deposited TiO2 films on Gallium Arsenide substrate were investigated. The physical and chemical properties were measured and… (more)

Subjects/Keywords: GaAs; ALD; TiO2; MOCVD

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APA (6th Edition):

Kuo, T. (2008). Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kuo, Ting-Huang. “Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.” 2008. Thesis, NSYSU. Accessed March 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kuo, Ting-Huang. “Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.” 2008. Web. 22 Mar 2019.

Vancouver:

Kuo T. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Mar 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kuo T. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

8. Lin, Yen-Ting. The structures of ZnO/Al2O3 superlattices grown by Atomic Layer Deposition.

Degree: Master, Physics, 2015, NSYSU

 Attempts were made to grow epitaxial ZnO/AlOx superlattice structures by Atomic Layer Deposition (ALD) at 177ËC on (0001)-oriented sapphire (α-Al2O3) and (100)-oriented Si substrates. In… (more)

Subjects/Keywords: ZnO; Al2O3; superlattices; ALD; XRR

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APA (6th Edition):

Lin, Y. (2015). The structures of ZnO/Al2O3 superlattices grown by Atomic Layer Deposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0807115-131328

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Yen-Ting. “The structures of ZnO/Al2O3 superlattices grown by Atomic Layer Deposition.” 2015. Thesis, NSYSU. Accessed March 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0807115-131328.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Yen-Ting. “The structures of ZnO/Al2O3 superlattices grown by Atomic Layer Deposition.” 2015. Web. 22 Mar 2019.

Vancouver:

Lin Y. The structures of ZnO/Al2O3 superlattices grown by Atomic Layer Deposition. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Mar 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0807115-131328.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin Y. The structures of ZnO/Al2O3 superlattices grown by Atomic Layer Deposition. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0807115-131328

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

9. Liu, Hua-hui. Modulated-oxidation ALD of m-ZnO epitaxial thin films.

Degree: Master, Physics, 2015, NSYSU

 This research studies the zinc oxide thin films by using atomic layer deposition (ALD) under periodically modulated exposures to an extra sequence of water. Water… (more)

Subjects/Keywords: ZnO; ALD; Nonpolar; H2O; Modulated

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APA (6th Edition):

Liu, H. (2015). Modulated-oxidation ALD of m-ZnO epitaxial thin films. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809115-152117

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Hua-hui. “Modulated-oxidation ALD of m-ZnO epitaxial thin films.” 2015. Thesis, NSYSU. Accessed March 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809115-152117.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Hua-hui. “Modulated-oxidation ALD of m-ZnO epitaxial thin films.” 2015. Web. 22 Mar 2019.

Vancouver:

Liu H. Modulated-oxidation ALD of m-ZnO epitaxial thin films. [Internet] [Thesis]. NSYSU; 2015. [cited 2019 Mar 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809115-152117.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu H. Modulated-oxidation ALD of m-ZnO epitaxial thin films. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809115-152117

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Oregon State University

10. Valdivia, Arturo Herrera. Atomic Layer Deposition of Two Dimensional MoS2 on 150 mm Substrates.

Degree: MS, Material Science, 2016, Oregon State University

 Two-dimensional transition metal dichalcogenides (TMDs) have recently come under intense investigation as building blocks for van der Waals heterostructure electronics. One of the most promising… (more)

Subjects/Keywords: ALD; Atomic layer deposition

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APA (6th Edition):

Valdivia, A. H. (2016). Atomic Layer Deposition of Two Dimensional MoS2 on 150 mm Substrates. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/59551

Chicago Manual of Style (16th Edition):

Valdivia, Arturo Herrera. “Atomic Layer Deposition of Two Dimensional MoS2 on 150 mm Substrates.” 2016. Masters Thesis, Oregon State University. Accessed March 22, 2019. http://hdl.handle.net/1957/59551.

MLA Handbook (7th Edition):

Valdivia, Arturo Herrera. “Atomic Layer Deposition of Two Dimensional MoS2 on 150 mm Substrates.” 2016. Web. 22 Mar 2019.

Vancouver:

Valdivia AH. Atomic Layer Deposition of Two Dimensional MoS2 on 150 mm Substrates. [Internet] [Masters thesis]. Oregon State University; 2016. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/1957/59551.

Council of Science Editors:

Valdivia AH. Atomic Layer Deposition of Two Dimensional MoS2 on 150 mm Substrates. [Masters Thesis]. Oregon State University; 2016. Available from: http://hdl.handle.net/1957/59551


University of Arizona

11. Wu, Xin. TiO2 Thin Film Interlayer for Organic Photovoltaics .

Degree: 2015, University of Arizona

 TiO2 films as electron collecting interlayers are important in determining the efficiency of organic photovoltaics (OPVs). Various methods of film deposition have been explored, and… (more)

Subjects/Keywords: CVD; OPV; TiO2; Chemistry; ALD

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APA (6th Edition):

Wu, X. (2015). TiO2 Thin Film Interlayer for Organic Photovoltaics . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/582369

Chicago Manual of Style (16th Edition):

Wu, Xin. “TiO2 Thin Film Interlayer for Organic Photovoltaics .” 2015. Masters Thesis, University of Arizona. Accessed March 22, 2019. http://hdl.handle.net/10150/582369.

MLA Handbook (7th Edition):

Wu, Xin. “TiO2 Thin Film Interlayer for Organic Photovoltaics .” 2015. Web. 22 Mar 2019.

Vancouver:

Wu X. TiO2 Thin Film Interlayer for Organic Photovoltaics . [Internet] [Masters thesis]. University of Arizona; 2015. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/10150/582369.

Council of Science Editors:

Wu X. TiO2 Thin Film Interlayer for Organic Photovoltaics . [Masters Thesis]. University of Arizona; 2015. Available from: http://hdl.handle.net/10150/582369

12. Oudot, Evan. Oxydes métalliques pour la passivation de l'interface Si / SiO2 des capteurs d'images CMOS : Metal oxides for passivation of the Si / SiO2 interface of CMOS image sensors.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Grenoble Alpes

Depuis la fin des années 2000 les capteurs d’images CMOS éclairés par la face arrière (Back-Side-Illuminated) prennent le pas sur les capteurs traditionnels éclairés par… (more)

Subjects/Keywords: Ald; High k; Photodétecteurs; Passivation; Ald; High k; Photodetectors; Passivation; 620

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APA (6th Edition):

Oudot, E. (2018). Oxydes métalliques pour la passivation de l'interface Si / SiO2 des capteurs d'images CMOS : Metal oxides for passivation of the Si / SiO2 interface of CMOS image sensors. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAT036

Chicago Manual of Style (16th Edition):

Oudot, Evan. “Oxydes métalliques pour la passivation de l'interface Si / SiO2 des capteurs d'images CMOS : Metal oxides for passivation of the Si / SiO2 interface of CMOS image sensors.” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed March 22, 2019. http://www.theses.fr/2018GREAT036.

MLA Handbook (7th Edition):

Oudot, Evan. “Oxydes métalliques pour la passivation de l'interface Si / SiO2 des capteurs d'images CMOS : Metal oxides for passivation of the Si / SiO2 interface of CMOS image sensors.” 2018. Web. 22 Mar 2019.

Vancouver:

Oudot E. Oxydes métalliques pour la passivation de l'interface Si / SiO2 des capteurs d'images CMOS : Metal oxides for passivation of the Si / SiO2 interface of CMOS image sensors. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2019 Mar 22]. Available from: http://www.theses.fr/2018GREAT036.

Council of Science Editors:

Oudot E. Oxydes métalliques pour la passivation de l'interface Si / SiO2 des capteurs d'images CMOS : Metal oxides for passivation of the Si / SiO2 interface of CMOS image sensors. [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAT036

13. Lebreton, Fabien. Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes : Passivation de la surface du silicium cristallin par l?oxyde d?aluminium synth?tis? via atomic layer deposition pour la fabrication de cellules photovolta?ques ? basse temp?rature.

Degree: Docteur es, Chimie, 2017, Paris Saclay

Cette thèse se focalise sur les propriétés passivantes octroyées par des couches minces d'Al2O3 déposées par Atomic Layer Deposition (ALD) à partir de TMA et… (more)

Subjects/Keywords: Passivation; Photovoltaïque; Al2O3; Ald; Life2; Passivation; Photovoltaics; Al2O3; Ald; Life2

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APA (6th Edition):

Lebreton, F. (2017). Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes : Passivation de la surface du silicium cristallin par l?oxyde d?aluminium synth?tis? via atomic layer deposition pour la fabrication de cellules photovolta?ques ? basse temp?rature. (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2017SACLX109

Chicago Manual of Style (16th Edition):

Lebreton, Fabien. “Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes : Passivation de la surface du silicium cristallin par l?oxyde d?aluminium synth?tis? via atomic layer deposition pour la fabrication de cellules photovolta?ques ? basse temp?rature.” 2017. Doctoral Dissertation, Paris Saclay. Accessed March 22, 2019. http://www.theses.fr/2017SACLX109.

MLA Handbook (7th Edition):

Lebreton, Fabien. “Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes : Passivation de la surface du silicium cristallin par l?oxyde d?aluminium synth?tis? via atomic layer deposition pour la fabrication de cellules photovolta?ques ? basse temp?rature.” 2017. Web. 22 Mar 2019.

Vancouver:

Lebreton F. Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes : Passivation de la surface du silicium cristallin par l?oxyde d?aluminium synth?tis? via atomic layer deposition pour la fabrication de cellules photovolta?ques ? basse temp?rature. [Internet] [Doctoral dissertation]. Paris Saclay; 2017. [cited 2019 Mar 22]. Available from: http://www.theses.fr/2017SACLX109.

Council of Science Editors:

Lebreton F. Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes : Passivation de la surface du silicium cristallin par l?oxyde d?aluminium synth?tis? via atomic layer deposition pour la fabrication de cellules photovolta?ques ? basse temp?rature. [Doctoral Dissertation]. Paris Saclay; 2017. Available from: http://www.theses.fr/2017SACLX109


University of Colorado

14. Lee, Younghee. Atomic Layer Etching of Metal Oxides and Atomic Layer Deposition of Metal Fluorides.

Degree: PhD, Chemistry & Biochemistry, 2015, University of Colorado

  Atomic control of thin film growth and removal is essential for semiconductor processing. Atomic layer deposition (ALD) is a thin film deposition technique that… (more)

Subjects/Keywords: ALD; ALE; isotropic etching; Chemistry; Physical Chemistry

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APA (6th Edition):

Lee, Y. (2015). Atomic Layer Etching of Metal Oxides and Atomic Layer Deposition of Metal Fluorides. (Doctoral Dissertation). University of Colorado. Retrieved from http://scholar.colorado.edu/chem_gradetds/152

Chicago Manual of Style (16th Edition):

Lee, Younghee. “Atomic Layer Etching of Metal Oxides and Atomic Layer Deposition of Metal Fluorides.” 2015. Doctoral Dissertation, University of Colorado. Accessed March 22, 2019. http://scholar.colorado.edu/chem_gradetds/152.

MLA Handbook (7th Edition):

Lee, Younghee. “Atomic Layer Etching of Metal Oxides and Atomic Layer Deposition of Metal Fluorides.” 2015. Web. 22 Mar 2019.

Vancouver:

Lee Y. Atomic Layer Etching of Metal Oxides and Atomic Layer Deposition of Metal Fluorides. [Internet] [Doctoral dissertation]. University of Colorado; 2015. [cited 2019 Mar 22]. Available from: http://scholar.colorado.edu/chem_gradetds/152.

Council of Science Editors:

Lee Y. Atomic Layer Etching of Metal Oxides and Atomic Layer Deposition of Metal Fluorides. [Doctoral Dissertation]. University of Colorado; 2015. Available from: http://scholar.colorado.edu/chem_gradetds/152


NSYSU

15. Lee, Jung-Chan. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.

Degree: Master, Electrical Engineering, 2013, NSYSU

 In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP Schottky tunneling barrier… (more)

Subjects/Keywords: InP; ALD; Schottky tunneling barrier MOSFET; TiO2

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APA (6th Edition):

Lee, J. (2013). Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Jung-Chan. “Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.” 2013. Thesis, NSYSU. Accessed March 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Jung-Chan. “Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.” 2013. Web. 22 Mar 2019.

Vancouver:

Lee J. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. [Internet] [Thesis]. NSYSU; 2013. [cited 2019 Mar 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee J. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

16. Tang, Tzu-hsien. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.

Degree: Master, Electrical Engineering, 2014, NSYSU

 In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP asytmmetrical Schottky barrier… (more)

Subjects/Keywords: InP; TiO2; asymmetrical Schottky barrier MOSFET; ALD

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APA (6th Edition):

Tang, T. (2014). Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tang, Tzu-hsien. “Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.” 2014. Thesis, NSYSU. Accessed March 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tang, Tzu-hsien. “Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.” 2014. Web. 22 Mar 2019.

Vancouver:

Tang T. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. [Internet] [Thesis]. NSYSU; 2014. [cited 2019 Mar 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tang T. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

17. Yang, Sheng-Hsiung. Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide.

Degree: Master, Electrical Engineering, 2012, NSYSU

 In this study, the thin titanium oxide (TiO2) film deposited on InP substrate was prepared by atomic layer deposition (ALD), which was used as gate… (more)

Subjects/Keywords: InP; TiO2; ALD; Schottky barrier MOSFET

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APA (6th Edition):

Yang, S. (2012). Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Sheng-Hsiung. “Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide.” 2012. Thesis, NSYSU. Accessed March 22, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Sheng-Hsiung. “Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide.” 2012. Web. 22 Mar 2019.

Vancouver:

Yang S. Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide. [Internet] [Thesis]. NSYSU; 2012. [cited 2019 Mar 22]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang S. Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of California – San Diego

18. Edmonds, Mary Ellen. InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers.

Degree: Materials Sci and Engineering, 2016, University of California – San Diego

 Metal oxide semiconductor field effect transistors (MOSFETs) are transitioning away from exclusive use of silicon and germanium into the employment of compound semiconductors such as… (more)

Subjects/Keywords: Materials Science; ALD; CVD; MOSFET; Surface Science

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APA (6th Edition):

Edmonds, M. E. (2016). InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers. (Thesis). University of California – San Diego. Retrieved from http://www.escholarship.org/uc/item/50j1t1wk

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Edmonds, Mary Ellen. “InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers.” 2016. Thesis, University of California – San Diego. Accessed March 22, 2019. http://www.escholarship.org/uc/item/50j1t1wk.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Edmonds, Mary Ellen. “InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers.” 2016. Web. 22 Mar 2019.

Vancouver:

Edmonds ME. InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers. [Internet] [Thesis]. University of California – San Diego; 2016. [cited 2019 Mar 22]. Available from: http://www.escholarship.org/uc/item/50j1t1wk.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Edmonds ME. InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers. [Thesis]. University of California – San Diego; 2016. Available from: http://www.escholarship.org/uc/item/50j1t1wk

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Debrecen

19. Szabó, Gergő. Polimer és alumínium-oxiddal bevont polimer páraáteresztésének vizsgálata .

Degree: DE – Természettudományi és Technológiai Kar – Fizikai Intézet, University of Debrecen

 Polimer műanyag csomagolófóliák páraáteresztő-képességét vizsgáltuk kezeletlen állapotban, illetve alumínium-oxid vékonyréteggel fedve. Eredményünk szerint egy 10-50nm vastag alumínium-oxid réteg jelentősen csökkenti a polimer fólia páraáteresztő-képességét. Kidolgoztunk… (more)

Subjects/Keywords: ald; diffúzió; polimer

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APA (6th Edition):

Szabó, G. (n.d.). Polimer és alumínium-oxiddal bevont polimer páraáteresztésének vizsgálata . (Thesis). University of Debrecen. Retrieved from http://hdl.handle.net/2437/240180

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Szabó, Gergő. “Polimer és alumínium-oxiddal bevont polimer páraáteresztésének vizsgálata .” Thesis, University of Debrecen. Accessed March 22, 2019. http://hdl.handle.net/2437/240180.

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Szabó, Gergő. “Polimer és alumínium-oxiddal bevont polimer páraáteresztésének vizsgálata .” Web. 22 Mar 2019.

Note: this citation may be lacking information needed for this citation format:
No year of publication.

Vancouver:

Szabó G. Polimer és alumínium-oxiddal bevont polimer páraáteresztésének vizsgálata . [Internet] [Thesis]. University of Debrecen; [cited 2019 Mar 22]. Available from: http://hdl.handle.net/2437/240180.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

Council of Science Editors:

Szabó G. Polimer és alumínium-oxiddal bevont polimer páraáteresztésének vizsgálata . [Thesis]. University of Debrecen; Available from: http://hdl.handle.net/2437/240180

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.


University of North Texas

20. Zhou, Mi. Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth.

Degree: 2011, University of North Texas

 The growth of single and multilayer BN films on several substrates was investigated. A typical atomic layer deposition (ALD) process was demonstrated on Si(111) substrate… (more)

Subjects/Keywords: Atomic layer deposition; boron nitride; grapheme; ALD

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APA (6th Edition):

Zhou, M. (2011). Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc84305/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhou, Mi. “Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth.” 2011. Thesis, University of North Texas. Accessed March 22, 2019. https://digital.library.unt.edu/ark:/67531/metadc84305/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhou, Mi. “Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth.” 2011. Web. 22 Mar 2019.

Vancouver:

Zhou M. Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth. [Internet] [Thesis]. University of North Texas; 2011. [cited 2019 Mar 22]. Available from: https://digital.library.unt.edu/ark:/67531/metadc84305/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhou M. Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth. [Thesis]. University of North Texas; 2011. Available from: https://digital.library.unt.edu/ark:/67531/metadc84305/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Perdue, Brian Robert. Electrochemical atomic layer deposition (E-ALD) of photovoltaic (PV) materials.

Degree: PhD, Chemistry, 2013, University of Georgia

 This dissertation investigates the layer-by-layer deposition of CdS and CdTe, two materials used to form photovoltaics (PV) by electrochemical atomic layer deposition (E-ALD). Like atomic… (more)

Subjects/Keywords: E-ALD

…x28;E-ALD) FOR USE IN PHOTOVOLTAICS (PV) 15 3. A COMPARISON OF CDS GROWN BY… …ALD) 64 5. ELECTROCHEMICAL ATOMIC LAYER DEPOSITION (E-ALD) OF CDTE ONTO… …x28;E-ALD) AND LITHOGRAPHY PATTERNED NANOWIRE ELECTRODEPOSITION (LPNE) 107… …ELECTROCHEMICAL ATOMIC LAYER DEPOSITION (E-ALD) 138 8. IS PULSE DEPOSITION OF CU2SE POSSIBLE… …deposition (ALD) is another technique that allows for uniform conformal deposition… 

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APA (6th Edition):

Perdue, B. R. (2013). Electrochemical atomic layer deposition (E-ALD) of photovoltaic (PV) materials. (Doctoral Dissertation). University of Georgia. Retrieved from http://purl.galileo.usg.edu/uga_etd/perdue_brian_r_201312_phd

Chicago Manual of Style (16th Edition):

Perdue, Brian Robert. “Electrochemical atomic layer deposition (E-ALD) of photovoltaic (PV) materials.” 2013. Doctoral Dissertation, University of Georgia. Accessed March 22, 2019. http://purl.galileo.usg.edu/uga_etd/perdue_brian_r_201312_phd.

MLA Handbook (7th Edition):

Perdue, Brian Robert. “Electrochemical atomic layer deposition (E-ALD) of photovoltaic (PV) materials.” 2013. Web. 22 Mar 2019.

Vancouver:

Perdue BR. Electrochemical atomic layer deposition (E-ALD) of photovoltaic (PV) materials. [Internet] [Doctoral dissertation]. University of Georgia; 2013. [cited 2019 Mar 22]. Available from: http://purl.galileo.usg.edu/uga_etd/perdue_brian_r_201312_phd.

Council of Science Editors:

Perdue BR. Electrochemical atomic layer deposition (E-ALD) of photovoltaic (PV) materials. [Doctoral Dissertation]. University of Georgia; 2013. Available from: http://purl.galileo.usg.edu/uga_etd/perdue_brian_r_201312_phd


Wayne State University

22. Ariyasena, Thiloka Chandima. (i)chromatographic Methods For Solute Descriptor Determinations (ii)ruthenium Substrate-Catalyzed Growth Of Nickel Nitride Thin Films By Atomic Layer Deposition.

Degree: PhD, Chemistry, 2015, Wayne State University

  Determination of distribution levels of environmentally important compounds in various environmental compartments is a major procedure in many fields including environmental risk assessment, food… (more)

Subjects/Keywords: ALD; Catalyzed; Chromatographic; Descriptor; Ruthenium; Substrate; Chemistry

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APA (6th Edition):

Ariyasena, T. C. (2015). (i)chromatographic Methods For Solute Descriptor Determinations (ii)ruthenium Substrate-Catalyzed Growth Of Nickel Nitride Thin Films By Atomic Layer Deposition. (Doctoral Dissertation). Wayne State University. Retrieved from https://digitalcommons.wayne.edu/oa_dissertations/1114

Chicago Manual of Style (16th Edition):

Ariyasena, Thiloka Chandima. “(i)chromatographic Methods For Solute Descriptor Determinations (ii)ruthenium Substrate-Catalyzed Growth Of Nickel Nitride Thin Films By Atomic Layer Deposition.” 2015. Doctoral Dissertation, Wayne State University. Accessed March 22, 2019. https://digitalcommons.wayne.edu/oa_dissertations/1114.

MLA Handbook (7th Edition):

Ariyasena, Thiloka Chandima. “(i)chromatographic Methods For Solute Descriptor Determinations (ii)ruthenium Substrate-Catalyzed Growth Of Nickel Nitride Thin Films By Atomic Layer Deposition.” 2015. Web. 22 Mar 2019.

Vancouver:

Ariyasena TC. (i)chromatographic Methods For Solute Descriptor Determinations (ii)ruthenium Substrate-Catalyzed Growth Of Nickel Nitride Thin Films By Atomic Layer Deposition. [Internet] [Doctoral dissertation]. Wayne State University; 2015. [cited 2019 Mar 22]. Available from: https://digitalcommons.wayne.edu/oa_dissertations/1114.

Council of Science Editors:

Ariyasena TC. (i)chromatographic Methods For Solute Descriptor Determinations (ii)ruthenium Substrate-Catalyzed Growth Of Nickel Nitride Thin Films By Atomic Layer Deposition. [Doctoral Dissertation]. Wayne State University; 2015. Available from: https://digitalcommons.wayne.edu/oa_dissertations/1114


Université de Sherbrooke

23. Plourde, Maxime. Fabrication d'un détecteur de charge basé sur un transistor monoélectronique métallique damascène .

Degree: 2018, Université de Sherbrooke

 Les transistors monoélectroniques (SET : Single Electron Transistor ) sont des dispositifs similaires aux transistors FET (Field Effect Transistor ) conventionnels. Ce qui distingue le… (more)

Subjects/Keywords: Détection de charge; Transistor monoélectronique; SET; ALD

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APA (6th Edition):

Plourde, M. (2018). Fabrication d'un détecteur de charge basé sur un transistor monoélectronique métallique damascène . (Masters Thesis). Université de Sherbrooke. Retrieved from http://hdl.handle.net/11143/12398

Chicago Manual of Style (16th Edition):

Plourde, Maxime. “Fabrication d'un détecteur de charge basé sur un transistor monoélectronique métallique damascène .” 2018. Masters Thesis, Université de Sherbrooke. Accessed March 22, 2019. http://hdl.handle.net/11143/12398.

MLA Handbook (7th Edition):

Plourde, Maxime. “Fabrication d'un détecteur de charge basé sur un transistor monoélectronique métallique damascène .” 2018. Web. 22 Mar 2019.

Vancouver:

Plourde M. Fabrication d'un détecteur de charge basé sur un transistor monoélectronique métallique damascène . [Internet] [Masters thesis]. Université de Sherbrooke; 2018. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/11143/12398.

Council of Science Editors:

Plourde M. Fabrication d'un détecteur de charge basé sur un transistor monoélectronique métallique damascène . [Masters Thesis]. Université de Sherbrooke; 2018. Available from: http://hdl.handle.net/11143/12398


Purdue University

24. Gharachorlou, Amir. SURFACE SCIENCE APPROACH TO ATOMIC LAYER DEPOSITION CHEMISTRY.

Degree: PhD, Chemical Engineering, 2014, Purdue University

 Recently, atomic layer deposition (ALD) has been employed as a promising technique for the growth of solid thin films with high conformality on complex geometries… (more)

Subjects/Keywords: ALD; catalyst; HREELS; STM; surface scinece; XPS

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APA (6th Edition):

Gharachorlou, A. (2014). SURFACE SCIENCE APPROACH TO ATOMIC LAYER DEPOSITION CHEMISTRY. (Doctoral Dissertation). Purdue University. Retrieved from https://docs.lib.purdue.edu/open_access_dissertations/1077

Chicago Manual of Style (16th Edition):

Gharachorlou, Amir. “SURFACE SCIENCE APPROACH TO ATOMIC LAYER DEPOSITION CHEMISTRY.” 2014. Doctoral Dissertation, Purdue University. Accessed March 22, 2019. https://docs.lib.purdue.edu/open_access_dissertations/1077.

MLA Handbook (7th Edition):

Gharachorlou, Amir. “SURFACE SCIENCE APPROACH TO ATOMIC LAYER DEPOSITION CHEMISTRY.” 2014. Web. 22 Mar 2019.

Vancouver:

Gharachorlou A. SURFACE SCIENCE APPROACH TO ATOMIC LAYER DEPOSITION CHEMISTRY. [Internet] [Doctoral dissertation]. Purdue University; 2014. [cited 2019 Mar 22]. Available from: https://docs.lib.purdue.edu/open_access_dissertations/1077.

Council of Science Editors:

Gharachorlou A. SURFACE SCIENCE APPROACH TO ATOMIC LAYER DEPOSITION CHEMISTRY. [Doctoral Dissertation]. Purdue University; 2014. Available from: https://docs.lib.purdue.edu/open_access_dissertations/1077


University of Minnesota

25. Moersch, Tyler Leighton. Understanding cominatorial atomic layer deposition and chemical vapor deposition.

Degree: PhD, Chemistry, 2009, University of Minnesota

 The transformation of molecular precursor to solid film begins with an understanding of molecular structure, proceeds through delivery of the molecule to the surface and… (more)

Subjects/Keywords: ALD; Atomic; Combinatorial; CVD; Deposition; Layer; Chemistry

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Moersch, T. L. (2009). Understanding cominatorial atomic layer deposition and chemical vapor deposition. (Doctoral Dissertation). University of Minnesota. Retrieved from http://purl.umn.edu/48025

Chicago Manual of Style (16th Edition):

Moersch, Tyler Leighton. “Understanding cominatorial atomic layer deposition and chemical vapor deposition.” 2009. Doctoral Dissertation, University of Minnesota. Accessed March 22, 2019. http://purl.umn.edu/48025.

MLA Handbook (7th Edition):

Moersch, Tyler Leighton. “Understanding cominatorial atomic layer deposition and chemical vapor deposition.” 2009. Web. 22 Mar 2019.

Vancouver:

Moersch TL. Understanding cominatorial atomic layer deposition and chemical vapor deposition. [Internet] [Doctoral dissertation]. University of Minnesota; 2009. [cited 2019 Mar 22]. Available from: http://purl.umn.edu/48025.

Council of Science Editors:

Moersch TL. Understanding cominatorial atomic layer deposition and chemical vapor deposition. [Doctoral Dissertation]. University of Minnesota; 2009. Available from: http://purl.umn.edu/48025


University of Minnesota

26. Halverson, Joshua. Group 13 Metal Doping of Cadmium Selenide Nanocrystals and Atomic Layer Deposition of Copper Oxide and Copper Aluminum Oxide.

Degree: PhD, Chemistry, 2017, University of Minnesota

 Semiconductors are a broad class of materials and by extension present a large array of possibilities for potential research. This thesis looks at two different… (more)

Subjects/Keywords: ALD; Copper Aluminum Oxide; Copper Oxide

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APA (6th Edition):

Halverson, J. (2017). Group 13 Metal Doping of Cadmium Selenide Nanocrystals and Atomic Layer Deposition of Copper Oxide and Copper Aluminum Oxide. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/188969

Chicago Manual of Style (16th Edition):

Halverson, Joshua. “Group 13 Metal Doping of Cadmium Selenide Nanocrystals and Atomic Layer Deposition of Copper Oxide and Copper Aluminum Oxide.” 2017. Doctoral Dissertation, University of Minnesota. Accessed March 22, 2019. http://hdl.handle.net/11299/188969.

MLA Handbook (7th Edition):

Halverson, Joshua. “Group 13 Metal Doping of Cadmium Selenide Nanocrystals and Atomic Layer Deposition of Copper Oxide and Copper Aluminum Oxide.” 2017. Web. 22 Mar 2019.

Vancouver:

Halverson J. Group 13 Metal Doping of Cadmium Selenide Nanocrystals and Atomic Layer Deposition of Copper Oxide and Copper Aluminum Oxide. [Internet] [Doctoral dissertation]. University of Minnesota; 2017. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/11299/188969.

Council of Science Editors:

Halverson J. Group 13 Metal Doping of Cadmium Selenide Nanocrystals and Atomic Layer Deposition of Copper Oxide and Copper Aluminum Oxide. [Doctoral Dissertation]. University of Minnesota; 2017. Available from: http://hdl.handle.net/11299/188969


North Carolina State University

27. Du, Yan. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.

Degree: PhD, Electrical Engineering, 2009, North Carolina State University

 SiGe source/drain technology has been sucessfully applied to bulk metal oxide semiconductor field effect transistors (MOSFETs). Both channel mobility and source/drain contact resistivity are substantially… (more)

Subjects/Keywords: nanowire; SiGe; Pt ALD; strain; CBED

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Du, Y. (2009). Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3433

Chicago Manual of Style (16th Edition):

Du, Yan. “Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.” 2009. Doctoral Dissertation, North Carolina State University. Accessed March 22, 2019. http://www.lib.ncsu.edu/resolver/1840.16/3433.

MLA Handbook (7th Edition):

Du, Yan. “Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.” 2009. Web. 22 Mar 2019.

Vancouver:

Du Y. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2019 Mar 22]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3433.

Council of Science Editors:

Du Y. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3433


Virginia Tech

28. Tollin, Craig Jeffrey. The characterization of Clostridium beijerinckii NRRL B592 cells transformed with plasmids containing the butanol-production genes under the control of constitutive promoters.

Degree: PhD, Biochemistry, 2012, Virginia Tech

 Clostridium beijerinckii is a spore-forming, obligate anaerobe that is capable of producing butanol, acetone and isopropanol. These industrial chemicals are traditionally known as solvents. The… (more)

Subjects/Keywords: ferredoxin; bcs; Clostridium; solventogenesis; adhA; ald; anaerobe

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tollin, C. J. (2012). The characterization of Clostridium beijerinckii NRRL B592 cells transformed with plasmids containing the butanol-production genes under the control of constitutive promoters. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/77235

Chicago Manual of Style (16th Edition):

Tollin, Craig Jeffrey. “The characterization of Clostridium beijerinckii NRRL B592 cells transformed with plasmids containing the butanol-production genes under the control of constitutive promoters.” 2012. Doctoral Dissertation, Virginia Tech. Accessed March 22, 2019. http://hdl.handle.net/10919/77235.

MLA Handbook (7th Edition):

Tollin, Craig Jeffrey. “The characterization of Clostridium beijerinckii NRRL B592 cells transformed with plasmids containing the butanol-production genes under the control of constitutive promoters.” 2012. Web. 22 Mar 2019.

Vancouver:

Tollin CJ. The characterization of Clostridium beijerinckii NRRL B592 cells transformed with plasmids containing the butanol-production genes under the control of constitutive promoters. [Internet] [Doctoral dissertation]. Virginia Tech; 2012. [cited 2019 Mar 22]. Available from: http://hdl.handle.net/10919/77235.

Council of Science Editors:

Tollin CJ. The characterization of Clostridium beijerinckii NRRL B592 cells transformed with plasmids containing the butanol-production genes under the control of constitutive promoters. [Doctoral Dissertation]. Virginia Tech; 2012. Available from: http://hdl.handle.net/10919/77235


Universidade Federal de Viçosa

29. Raniella Falchetto Bazoni. Caracterização de camadas de TiO2:Al2O3 por refletividade de raios-x.

Degree: 2013, Universidade Federal de Viçosa

Neste trabalho, camadas ultra-finas de óxidos, crescidas pela técnica de deposição por camada atômica, foram caracterizadas através de medidas de refletividade de raios-x. As amostras… (more)

Subjects/Keywords: FISICA DA MATERIA CONDENSADA; ALD; Refletividade; Ajustes; Softwares; ALD; Reflectivity; Fits; Softwares

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bazoni, R. F. (2013). Caracterização de camadas de TiO2:Al2O3 por refletividade de raios-x. (Thesis). Universidade Federal de Viçosa. Retrieved from http://www.tede.ufv.br/tedesimplificado/tde_busca/arquivo.php?codArquivo=4982

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bazoni, Raniella Falchetto. “Caracterização de camadas de TiO2:Al2O3 por refletividade de raios-x.” 2013. Thesis, Universidade Federal de Viçosa. Accessed March 22, 2019. http://www.tede.ufv.br/tedesimplificado/tde_busca/arquivo.php?codArquivo=4982.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bazoni, Raniella Falchetto. “Caracterização de camadas de TiO2:Al2O3 por refletividade de raios-x.” 2013. Web. 22 Mar 2019.

Vancouver:

Bazoni RF. Caracterização de camadas de TiO2:Al2O3 por refletividade de raios-x. [Internet] [Thesis]. Universidade Federal de Viçosa; 2013. [cited 2019 Mar 22]. Available from: http://www.tede.ufv.br/tedesimplificado/tde_busca/arquivo.php?codArquivo=4982.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bazoni RF. Caracterização de camadas de TiO2:Al2O3 por refletividade de raios-x. [Thesis]. Universidade Federal de Viçosa; 2013. Available from: http://www.tede.ufv.br/tedesimplificado/tde_busca/arquivo.php?codArquivo=4982

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

30. Madassamy, Sandrine. Etude et optimisation de capacités MIM 3D à haute densité d'énergie fortement intégrées sur silicium : Study and optimization of 3D MIM capacitors highly integrated on silicon substrate with high energy storage.

Degree: Docteur es, Génie électrique, 2016, Grenoble Alpes

 Le stockage de l’énergie reste une problématique majeure pour le développement d’objets embarqués (Internet of Things) à faible facteur de forme. En effet, pour le… (more)

Subjects/Keywords: Nanotechnologie; Capacité 3D MIM; High-K; Ald; Nanotechnology; 3D MIM capacitor; High-K; Ald; 620

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Madassamy, S. (2016). Etude et optimisation de capacités MIM 3D à haute densité d'énergie fortement intégrées sur silicium : Study and optimization of 3D MIM capacitors highly integrated on silicon substrate with high energy storage. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2016GREAT044

Chicago Manual of Style (16th Edition):

Madassamy, Sandrine. “Etude et optimisation de capacités MIM 3D à haute densité d'énergie fortement intégrées sur silicium : Study and optimization of 3D MIM capacitors highly integrated on silicon substrate with high energy storage.” 2016. Doctoral Dissertation, Grenoble Alpes. Accessed March 22, 2019. http://www.theses.fr/2016GREAT044.

MLA Handbook (7th Edition):

Madassamy, Sandrine. “Etude et optimisation de capacités MIM 3D à haute densité d'énergie fortement intégrées sur silicium : Study and optimization of 3D MIM capacitors highly integrated on silicon substrate with high energy storage.” 2016. Web. 22 Mar 2019.

Vancouver:

Madassamy S. Etude et optimisation de capacités MIM 3D à haute densité d'énergie fortement intégrées sur silicium : Study and optimization of 3D MIM capacitors highly integrated on silicon substrate with high energy storage. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2016. [cited 2019 Mar 22]. Available from: http://www.theses.fr/2016GREAT044.

Council of Science Editors:

Madassamy S. Etude et optimisation de capacités MIM 3D à haute densité d'énergie fortement intégrées sur silicium : Study and optimization of 3D MIM capacitors highly integrated on silicon substrate with high energy storage. [Doctoral Dissertation]. Grenoble Alpes; 2016. Available from: http://www.theses.fr/2016GREAT044

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