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You searched for subject:(ALD). Showing records 1 – 30 of 205 total matches.

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University of Debrecen

1. Szabó, Éva. Atomi rétegleválasztás (ALD) módszerrel készített vékonyrétegek analízise .

Degree: DE – Természettudományi és Technológiai Kar – Kémiai Intézet, 2014, University of Debrecen

 Munkám során az MTA Atommagkutató Intézetben a 2013-as év végén üzembe helyezett Beneq TFS-200 típusú atomi rétegleválasztó berendezés (ALD) működési paramétereinek optimalizálásával, Al2O3 vékonyrétegek előállításával… (more)

Subjects/Keywords: ALD; analízis

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APA (6th Edition):

Szabó, . (2014). Atomi rétegleválasztás (ALD) módszerrel készített vékonyrétegek analízise . (Thesis). University of Debrecen. Retrieved from http://hdl.handle.net/2437/191789

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Szabó, Éva. “Atomi rétegleválasztás (ALD) módszerrel készített vékonyrétegek analízise .” 2014. Thesis, University of Debrecen. Accessed September 18, 2020. http://hdl.handle.net/2437/191789.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Szabó, Éva. “Atomi rétegleválasztás (ALD) módszerrel készített vékonyrétegek analízise .” 2014. Web. 18 Sep 2020.

Vancouver:

Szabó . Atomi rétegleválasztás (ALD) módszerrel készített vékonyrétegek analízise . [Internet] [Thesis]. University of Debrecen; 2014. [cited 2020 Sep 18]. Available from: http://hdl.handle.net/2437/191789.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Szabó . Atomi rétegleválasztás (ALD) módszerrel készített vékonyrétegek analízise . [Thesis]. University of Debrecen; 2014. Available from: http://hdl.handle.net/2437/191789

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

2. Fedorenko, Viktoriia. Atomic layer deposition on three dimensional silicon substrates for optical biosensors applications : Substrat silice 3D pour des applications biocapteur optique.

Degree: Docteur es, Chimie et physico-chimie des matériaux, 2017, Montpellier; Odessa I. I. Mechnikov State university

Ce manuscrit de thèse présente les recherches et les applications potentielles en tant que plate-forme (bio) capteur des couches minces conformes de ZnO et /… (more)

Subjects/Keywords: ALD; Biocapteur; Nanostructure; ALD; Biosensor; Nanostructure

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APA (6th Edition):

Fedorenko, V. (2017). Atomic layer deposition on three dimensional silicon substrates for optical biosensors applications : Substrat silice 3D pour des applications biocapteur optique. (Doctoral Dissertation). Montpellier; Odessa I. I. Mechnikov State university. Retrieved from http://www.theses.fr/2017MONTT183

Chicago Manual of Style (16th Edition):

Fedorenko, Viktoriia. “Atomic layer deposition on three dimensional silicon substrates for optical biosensors applications : Substrat silice 3D pour des applications biocapteur optique.” 2017. Doctoral Dissertation, Montpellier; Odessa I. I. Mechnikov State university. Accessed September 18, 2020. http://www.theses.fr/2017MONTT183.

MLA Handbook (7th Edition):

Fedorenko, Viktoriia. “Atomic layer deposition on three dimensional silicon substrates for optical biosensors applications : Substrat silice 3D pour des applications biocapteur optique.” 2017. Web. 18 Sep 2020.

Vancouver:

Fedorenko V. Atomic layer deposition on three dimensional silicon substrates for optical biosensors applications : Substrat silice 3D pour des applications biocapteur optique. [Internet] [Doctoral dissertation]. Montpellier; Odessa I. I. Mechnikov State university; 2017. [cited 2020 Sep 18]. Available from: http://www.theses.fr/2017MONTT183.

Council of Science Editors:

Fedorenko V. Atomic layer deposition on three dimensional silicon substrates for optical biosensors applications : Substrat silice 3D pour des applications biocapteur optique. [Doctoral Dissertation]. Montpellier; Odessa I. I. Mechnikov State university; 2017. Available from: http://www.theses.fr/2017MONTT183


NSYSU

3. Chen, Da-Ching. Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide.

Degree: Master, Electrical Engineering, 2009, NSYSU

 Due to the high electron mobility compared with Si, III-V compound semiconductors (GaAs) has been applied widely for high-speed devices. The titanium oxide (TiO2) has… (more)

Subjects/Keywords: TiO2; GaAs; ALD

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APA (6th Edition):

Chen, D. (2009). Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Da-Ching. “Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide.” 2009. Thesis, NSYSU. Accessed September 18, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Da-Ching. “Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide.” 2009. Web. 18 Sep 2020.

Vancouver:

Chen D. Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide. [Internet] [Thesis]. NSYSU; 2009. [cited 2020 Sep 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen D. Characterization of SulfurãFluorine and Hydrogen Passivation on Titanium Oxide prepared by Atomic Layer Deposition on Gallium Arsenide. [Thesis]. NSYSU; 2009. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0804109-122205

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Chicago

4. Huang, Su. Improving Polymethyl Methacrylate Resin Using a Novel Nano-Ceramic Coating.

Degree: 2017, University of Illinois – Chicago

 Poly (methyl methacrylate) (PMMA) has been broadly applied in dental implant supported restorations and removable dentures. These prostheses are used by 10’s of millions of… (more)

Subjects/Keywords: PMMA; TiO2; ALD

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APA (6th Edition):

Huang, S. (2017). Improving Polymethyl Methacrylate Resin Using a Novel Nano-Ceramic Coating. (Thesis). University of Illinois – Chicago. Retrieved from http://hdl.handle.net/10027/22059

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Huang, Su. “Improving Polymethyl Methacrylate Resin Using a Novel Nano-Ceramic Coating.” 2017. Thesis, University of Illinois – Chicago. Accessed September 18, 2020. http://hdl.handle.net/10027/22059.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Huang, Su. “Improving Polymethyl Methacrylate Resin Using a Novel Nano-Ceramic Coating.” 2017. Web. 18 Sep 2020.

Vancouver:

Huang S. Improving Polymethyl Methacrylate Resin Using a Novel Nano-Ceramic Coating. [Internet] [Thesis]. University of Illinois – Chicago; 2017. [cited 2020 Sep 18]. Available from: http://hdl.handle.net/10027/22059.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Huang S. Improving Polymethyl Methacrylate Resin Using a Novel Nano-Ceramic Coating. [Thesis]. University of Illinois – Chicago; 2017. Available from: http://hdl.handle.net/10027/22059

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

5. Päiväsaari, Jani. Atomic Layer Deposition of Lanthanide Oxide Thin Films.

Degree: 2006, Helsinki University of Technology

This thesis describes the processing of thin films of lanthanide (Ln) oxides by atomic layer deposition (ALD) technique. Deposition of all binary lanthanide oxides was… (more)

Subjects/Keywords: precursors; rare earth oxides; ALD

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APA (6th Edition):

Päiväsaari, J. (2006). Atomic Layer Deposition of Lanthanide Oxide Thin Films. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2006/isbn9512281635/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Päiväsaari, Jani. “Atomic Layer Deposition of Lanthanide Oxide Thin Films.” 2006. Thesis, Helsinki University of Technology. Accessed September 18, 2020. http://lib.tkk.fi/Diss/2006/isbn9512281635/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Päiväsaari, Jani. “Atomic Layer Deposition of Lanthanide Oxide Thin Films.” 2006. Web. 18 Sep 2020.

Vancouver:

Päiväsaari J. Atomic Layer Deposition of Lanthanide Oxide Thin Films. [Internet] [Thesis]. Helsinki University of Technology; 2006. [cited 2020 Sep 18]. Available from: http://lib.tkk.fi/Diss/2006/isbn9512281635/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Päiväsaari J. Atomic Layer Deposition of Lanthanide Oxide Thin Films. [Thesis]. Helsinki University of Technology; 2006. Available from: http://lib.tkk.fi/Diss/2006/isbn9512281635/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Oregon State University

6. Valdivia, Arturo Herrera. Atomic Layer Deposition of Two Dimensional MoS2 on 150 mm Substrates.

Degree: MS, Material Science, 2016, Oregon State University

 Two-dimensional transition metal dichalcogenides (TMDs) have recently come under intense investigation as building blocks for van der Waals heterostructure electronics. One of the most promising… (more)

Subjects/Keywords: ALD; Atomic layer deposition

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APA (6th Edition):

Valdivia, A. H. (2016). Atomic Layer Deposition of Two Dimensional MoS2 on 150 mm Substrates. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/59551

Chicago Manual of Style (16th Edition):

Valdivia, Arturo Herrera. “Atomic Layer Deposition of Two Dimensional MoS2 on 150 mm Substrates.” 2016. Masters Thesis, Oregon State University. Accessed September 18, 2020. http://hdl.handle.net/1957/59551.

MLA Handbook (7th Edition):

Valdivia, Arturo Herrera. “Atomic Layer Deposition of Two Dimensional MoS2 on 150 mm Substrates.” 2016. Web. 18 Sep 2020.

Vancouver:

Valdivia AH. Atomic Layer Deposition of Two Dimensional MoS2 on 150 mm Substrates. [Internet] [Masters thesis]. Oregon State University; 2016. [cited 2020 Sep 18]. Available from: http://hdl.handle.net/1957/59551.

Council of Science Editors:

Valdivia AH. Atomic Layer Deposition of Two Dimensional MoS2 on 150 mm Substrates. [Masters Thesis]. Oregon State University; 2016. Available from: http://hdl.handle.net/1957/59551


NSYSU

7. Kuo, Ting-Huang. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.

Degree: Master, Electrical Engineering, 2008, NSYSU

 In this study, the characteristics of atomic layer deposited TiO2 films on Gallium Arsenide substrate were investigated. The physical and chemical properties were measured and… (more)

Subjects/Keywords: GaAs; ALD; TiO2; MOCVD

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APA (6th Edition):

Kuo, T. (2008). Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kuo, Ting-Huang. “Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.” 2008. Thesis, NSYSU. Accessed September 18, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kuo, Ting-Huang. “Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition.” 2008. Web. 18 Sep 2020.

Vancouver:

Kuo T. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. [Internet] [Thesis]. NSYSU; 2008. [cited 2020 Sep 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kuo T. Characterization of Titanium Oxide Films on Gallium Arsenide Prepared by Atomic Layer Deposition. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0724108-160242

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

8. Lin, Yen-Ting. The structures of ZnO/Al2O3 superlattices grown by Atomic Layer Deposition.

Degree: Master, Physics, 2015, NSYSU

 Attempts were made to grow epitaxial ZnO/AlOx superlattice structures by Atomic Layer Deposition (ALD) at 177ËC on (0001)-oriented sapphire (α-Al2O3) and (100)-oriented Si substrates. In… (more)

Subjects/Keywords: ZnO; Al2O3; superlattices; ALD; XRR

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APA (6th Edition):

Lin, Y. (2015). The structures of ZnO/Al2O3 superlattices grown by Atomic Layer Deposition. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0807115-131328

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lin, Yen-Ting. “The structures of ZnO/Al2O3 superlattices grown by Atomic Layer Deposition.” 2015. Thesis, NSYSU. Accessed September 18, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0807115-131328.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lin, Yen-Ting. “The structures of ZnO/Al2O3 superlattices grown by Atomic Layer Deposition.” 2015. Web. 18 Sep 2020.

Vancouver:

Lin Y. The structures of ZnO/Al2O3 superlattices grown by Atomic Layer Deposition. [Internet] [Thesis]. NSYSU; 2015. [cited 2020 Sep 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0807115-131328.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lin Y. The structures of ZnO/Al2O3 superlattices grown by Atomic Layer Deposition. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0807115-131328

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

9. Liu, Hua-hui. Modulated-oxidation ALD of m-ZnO epitaxial thin films.

Degree: Master, Physics, 2015, NSYSU

 This research studies the zinc oxide thin films by using atomic layer deposition (ALD) under periodically modulated exposures to an extra sequence of water. Water… (more)

Subjects/Keywords: ZnO; ALD; Nonpolar; H2O; Modulated

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APA (6th Edition):

Liu, H. (2015). Modulated-oxidation ALD of m-ZnO epitaxial thin films. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809115-152117

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Hua-hui. “Modulated-oxidation ALD of m-ZnO epitaxial thin films.” 2015. Thesis, NSYSU. Accessed September 18, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809115-152117.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Hua-hui. “Modulated-oxidation ALD of m-ZnO epitaxial thin films.” 2015. Web. 18 Sep 2020.

Vancouver:

Liu H. Modulated-oxidation ALD of m-ZnO epitaxial thin films. [Internet] [Thesis]. NSYSU; 2015. [cited 2020 Sep 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809115-152117.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu H. Modulated-oxidation ALD of m-ZnO epitaxial thin films. [Thesis]. NSYSU; 2015. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0809115-152117

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Chicago

10. Chang, Siliang. Atomic Layer Deposition of Tin Titanate - Achieving Ferroelectricity And Beyond.

Degree: 2018, University of Illinois – Chicago

 Ferroelectric perovskites are a type of ternary oxide with ABO3 stoichiometry that possess hysteresis polarization loop under externally applied electric field. They are widely used… (more)

Subjects/Keywords: ALD; tin titanate; ferroelectric material

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APA (6th Edition):

Chang, S. (2018). Atomic Layer Deposition of Tin Titanate - Achieving Ferroelectricity And Beyond. (Thesis). University of Illinois – Chicago. Retrieved from http://hdl.handle.net/10027/22674

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chang, Siliang. “Atomic Layer Deposition of Tin Titanate - Achieving Ferroelectricity And Beyond.” 2018. Thesis, University of Illinois – Chicago. Accessed September 18, 2020. http://hdl.handle.net/10027/22674.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chang, Siliang. “Atomic Layer Deposition of Tin Titanate - Achieving Ferroelectricity And Beyond.” 2018. Web. 18 Sep 2020.

Vancouver:

Chang S. Atomic Layer Deposition of Tin Titanate - Achieving Ferroelectricity And Beyond. [Internet] [Thesis]. University of Illinois – Chicago; 2018. [cited 2020 Sep 18]. Available from: http://hdl.handle.net/10027/22674.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chang S. Atomic Layer Deposition of Tin Titanate - Achieving Ferroelectricity And Beyond. [Thesis]. University of Illinois – Chicago; 2018. Available from: http://hdl.handle.net/10027/22674

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

11. Masse de la Huerta, César, Arturo. Développement de la technique dépôt par couche atomique spatiale (SALD) pour la fabrication de couches minces type P d'oxyde de cuivre (I) conductrices : Development of the Spatial Atomic Layer Deposition (SALD) technique for the fabrication of p-type thin films of highly conductive copper (I) oxide.

Degree: Docteur es, Matériaux, Mécanique, Génie civil, Electrochimie, 2019, Université Grenoble Alpes (ComUE)

 Pour concevoir avec succès l'instrumentation nécessaire aux nouvelles technologies de fabrication avec une précision nanométrique, la méthodologie de conception doit prendre en compte de nombreux… (more)

Subjects/Keywords: Tco; Couche mince; Oxyde de Cuivre; Ald; Nanofabricaton; ALD Spatiale; Tco; Thin Films; Copper Oxide; Ald; Nanofabrication; Spatial ALD; 530

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APA (6th Edition):

Masse de la Huerta, César, A. (2019). Développement de la technique dépôt par couche atomique spatiale (SALD) pour la fabrication de couches minces type P d'oxyde de cuivre (I) conductrices : Development of the Spatial Atomic Layer Deposition (SALD) technique for the fabrication of p-type thin films of highly conductive copper (I) oxide. (Doctoral Dissertation). Université Grenoble Alpes (ComUE). Retrieved from http://www.theses.fr/2019GREAI067

Chicago Manual of Style (16th Edition):

Masse de la Huerta, César, Arturo. “Développement de la technique dépôt par couche atomique spatiale (SALD) pour la fabrication de couches minces type P d'oxyde de cuivre (I) conductrices : Development of the Spatial Atomic Layer Deposition (SALD) technique for the fabrication of p-type thin films of highly conductive copper (I) oxide.” 2019. Doctoral Dissertation, Université Grenoble Alpes (ComUE). Accessed September 18, 2020. http://www.theses.fr/2019GREAI067.

MLA Handbook (7th Edition):

Masse de la Huerta, César, Arturo. “Développement de la technique dépôt par couche atomique spatiale (SALD) pour la fabrication de couches minces type P d'oxyde de cuivre (I) conductrices : Development of the Spatial Atomic Layer Deposition (SALD) technique for the fabrication of p-type thin films of highly conductive copper (I) oxide.” 2019. Web. 18 Sep 2020.

Vancouver:

Masse de la Huerta, César A. Développement de la technique dépôt par couche atomique spatiale (SALD) pour la fabrication de couches minces type P d'oxyde de cuivre (I) conductrices : Development of the Spatial Atomic Layer Deposition (SALD) technique for the fabrication of p-type thin films of highly conductive copper (I) oxide. [Internet] [Doctoral dissertation]. Université Grenoble Alpes (ComUE); 2019. [cited 2020 Sep 18]. Available from: http://www.theses.fr/2019GREAI067.

Council of Science Editors:

Masse de la Huerta, César A. Développement de la technique dépôt par couche atomique spatiale (SALD) pour la fabrication de couches minces type P d'oxyde de cuivre (I) conductrices : Development of the Spatial Atomic Layer Deposition (SALD) technique for the fabrication of p-type thin films of highly conductive copper (I) oxide. [Doctoral Dissertation]. Université Grenoble Alpes (ComUE); 2019. Available from: http://www.theses.fr/2019GREAI067


University of Arizona

12. Wu, Xin. TiO2 Thin Film Interlayer for Organic Photovoltaics .

Degree: 2015, University of Arizona

 TiO2 films as electron collecting interlayers are important in determining the efficiency of organic photovoltaics (OPVs). Various methods of film deposition have been explored, and… (more)

Subjects/Keywords: CVD; OPV; TiO2; Chemistry; ALD

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APA (6th Edition):

Wu, X. (2015). TiO2 Thin Film Interlayer for Organic Photovoltaics . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/582369

Chicago Manual of Style (16th Edition):

Wu, Xin. “TiO2 Thin Film Interlayer for Organic Photovoltaics .” 2015. Masters Thesis, University of Arizona. Accessed September 18, 2020. http://hdl.handle.net/10150/582369.

MLA Handbook (7th Edition):

Wu, Xin. “TiO2 Thin Film Interlayer for Organic Photovoltaics .” 2015. Web. 18 Sep 2020.

Vancouver:

Wu X. TiO2 Thin Film Interlayer for Organic Photovoltaics . [Internet] [Masters thesis]. University of Arizona; 2015. [cited 2020 Sep 18]. Available from: http://hdl.handle.net/10150/582369.

Council of Science Editors:

Wu X. TiO2 Thin Film Interlayer for Organic Photovoltaics . [Masters Thesis]. University of Arizona; 2015. Available from: http://hdl.handle.net/10150/582369

13. Oudot, Evan. Oxydes métalliques pour la passivation de l'interface Si / SiO2 des capteurs d'images CMOS : Metal oxides for passivation of the Si / SiO2 interface of CMOS image sensors.

Degree: Docteur es, Nano electronique et nano technologies, 2018, Grenoble Alpes

Depuis la fin des années 2000 les capteurs d’images CMOS éclairés par la face arrière (Back-Side-Illuminated) prennent le pas sur les capteurs traditionnels éclairés par… (more)

Subjects/Keywords: Ald; High k; Photodétecteurs; Passivation; Ald; High k; Photodetectors; Passivation; 620

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APA (6th Edition):

Oudot, E. (2018). Oxydes métalliques pour la passivation de l'interface Si / SiO2 des capteurs d'images CMOS : Metal oxides for passivation of the Si / SiO2 interface of CMOS image sensors. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2018GREAT036

Chicago Manual of Style (16th Edition):

Oudot, Evan. “Oxydes métalliques pour la passivation de l'interface Si / SiO2 des capteurs d'images CMOS : Metal oxides for passivation of the Si / SiO2 interface of CMOS image sensors.” 2018. Doctoral Dissertation, Grenoble Alpes. Accessed September 18, 2020. http://www.theses.fr/2018GREAT036.

MLA Handbook (7th Edition):

Oudot, Evan. “Oxydes métalliques pour la passivation de l'interface Si / SiO2 des capteurs d'images CMOS : Metal oxides for passivation of the Si / SiO2 interface of CMOS image sensors.” 2018. Web. 18 Sep 2020.

Vancouver:

Oudot E. Oxydes métalliques pour la passivation de l'interface Si / SiO2 des capteurs d'images CMOS : Metal oxides for passivation of the Si / SiO2 interface of CMOS image sensors. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2018. [cited 2020 Sep 18]. Available from: http://www.theses.fr/2018GREAT036.

Council of Science Editors:

Oudot E. Oxydes métalliques pour la passivation de l'interface Si / SiO2 des capteurs d'images CMOS : Metal oxides for passivation of the Si / SiO2 interface of CMOS image sensors. [Doctoral Dissertation]. Grenoble Alpes; 2018. Available from: http://www.theses.fr/2018GREAT036

14. Lebreton, Fabien. Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes : Passivation de la surface du silicium cristallin par l’oxyde d’aluminium synthétisé via atomic layer deposition pour la fabrication de cellules photovoltaïques à basse température.

Degree: Docteur es, Chimie, 2017, Université Paris-Saclay (ComUE)

Cette thèse se focalise sur les propriétés passivantes octroyées par des couches minces d’Al2O3 déposées par Atomic Layer Deposition (ALD) à partir de TMA et… (more)

Subjects/Keywords: Passivation; Photovoltaïque; Al2O3; Ald; Life2; Passivation; Photovoltaics; Al2O3; Ald; Life2

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APA (6th Edition):

Lebreton, F. (2017). Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes : Passivation de la surface du silicium cristallin par l’oxyde d’aluminium synthétisé via atomic layer deposition pour la fabrication de cellules photovoltaïques à basse température. (Doctoral Dissertation). Université Paris-Saclay (ComUE). Retrieved from http://www.theses.fr/2017SACLX109

Chicago Manual of Style (16th Edition):

Lebreton, Fabien. “Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes : Passivation de la surface du silicium cristallin par l’oxyde d’aluminium synthétisé via atomic layer deposition pour la fabrication de cellules photovoltaïques à basse température.” 2017. Doctoral Dissertation, Université Paris-Saclay (ComUE). Accessed September 18, 2020. http://www.theses.fr/2017SACLX109.

MLA Handbook (7th Edition):

Lebreton, Fabien. “Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes : Passivation de la surface du silicium cristallin par l’oxyde d’aluminium synthétisé via atomic layer deposition pour la fabrication de cellules photovoltaïques à basse température.” 2017. Web. 18 Sep 2020.

Vancouver:

Lebreton F. Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes : Passivation de la surface du silicium cristallin par l’oxyde d’aluminium synthétisé via atomic layer deposition pour la fabrication de cellules photovoltaïques à basse température. [Internet] [Doctoral dissertation]. Université Paris-Saclay (ComUE); 2017. [cited 2020 Sep 18]. Available from: http://www.theses.fr/2017SACLX109.

Council of Science Editors:

Lebreton F. Silicon surface passivation properties of aluminum oxide grown by atomic layer deposition for low temperature solar cells processes : Passivation de la surface du silicium cristallin par l’oxyde d’aluminium synthétisé via atomic layer deposition pour la fabrication de cellules photovoltaïques à basse température. [Doctoral Dissertation]. Université Paris-Saclay (ComUE); 2017. Available from: http://www.theses.fr/2017SACLX109


University College Cork

15. Filatova, Ekaterina A. Area selective atomic layer deposition of Si-based materials.

Degree: 2019, University College Cork

 Modern electronics are very small and light yet extremely powerful. This is possible due to the constant integration of new techniques and novel materials into… (more)

Subjects/Keywords: ALD; DFT; ALD mechanism; Atomic layer deposition; Ab-initio modelling; Area selective ALD; Silicon materials; Semiconductor

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APA (6th Edition):

Filatova, E. A. (2019). Area selective atomic layer deposition of Si-based materials. (Thesis). University College Cork. Retrieved from http://hdl.handle.net/10468/8091

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Filatova, Ekaterina A. “Area selective atomic layer deposition of Si-based materials.” 2019. Thesis, University College Cork. Accessed September 18, 2020. http://hdl.handle.net/10468/8091.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Filatova, Ekaterina A. “Area selective atomic layer deposition of Si-based materials.” 2019. Web. 18 Sep 2020.

Vancouver:

Filatova EA. Area selective atomic layer deposition of Si-based materials. [Internet] [Thesis]. University College Cork; 2019. [cited 2020 Sep 18]. Available from: http://hdl.handle.net/10468/8091.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Filatova EA. Area selective atomic layer deposition of Si-based materials. [Thesis]. University College Cork; 2019. Available from: http://hdl.handle.net/10468/8091

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of California – San Diego

16. Edmonds, Mary Ellen. InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers.

Degree: Materials Sci and Engineering, 2016, University of California – San Diego

 Metal oxide semiconductor field effect transistors (MOSFETs) are transitioning away from exclusive use of silicon and germanium into the employment of compound semiconductors such as… (more)

Subjects/Keywords: Materials Science; ALD; CVD; MOSFET; Surface Science

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APA (6th Edition):

Edmonds, M. E. (2016). InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers. (Thesis). University of California – San Diego. Retrieved from http://www.escholarship.org/uc/item/50j1t1wk

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Edmonds, Mary Ellen. “InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers.” 2016. Thesis, University of California – San Diego. Accessed September 18, 2020. http://www.escholarship.org/uc/item/50j1t1wk.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Edmonds, Mary Ellen. “InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers.” 2016. Web. 18 Sep 2020.

Vancouver:

Edmonds ME. InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers. [Internet] [Thesis]. University of California – San Diego; 2016. [cited 2020 Sep 18]. Available from: http://www.escholarship.org/uc/item/50j1t1wk.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Edmonds ME. InGaAs(001) and SiGe(001)/(110) Surface Passivation by Self-Limiting Deposition of Silicon Containing Control Layers. [Thesis]. University of California – San Diego; 2016. Available from: http://www.escholarship.org/uc/item/50j1t1wk

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Penn State University

17. Sohrabi baba heidary, Damoon. NOVEL PROCESSING COATING TECHNIQUES TOWARD IMPROVED ELECTRO-CERAMICS.

Degree: 2016, Penn State University

 Novel coating processing techniques were utilized to improve the electrical performance of electro-ceramics. In the first part of this work, atomic layer deposition (ALD) coatings… (more)

Subjects/Keywords: ALD; MLCC; Nickel; Hydrogen; Degradation; Conductivity Preservation

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APA (6th Edition):

Sohrabi baba heidary, D. (2016). NOVEL PROCESSING COATING TECHNIQUES TOWARD IMPROVED ELECTRO-CERAMICS. (Thesis). Penn State University. Retrieved from https://submit-etda.libraries.psu.edu/catalog/12970dus255

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Sohrabi baba heidary, Damoon. “NOVEL PROCESSING COATING TECHNIQUES TOWARD IMPROVED ELECTRO-CERAMICS.” 2016. Thesis, Penn State University. Accessed September 18, 2020. https://submit-etda.libraries.psu.edu/catalog/12970dus255.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Sohrabi baba heidary, Damoon. “NOVEL PROCESSING COATING TECHNIQUES TOWARD IMPROVED ELECTRO-CERAMICS.” 2016. Web. 18 Sep 2020.

Vancouver:

Sohrabi baba heidary D. NOVEL PROCESSING COATING TECHNIQUES TOWARD IMPROVED ELECTRO-CERAMICS. [Internet] [Thesis]. Penn State University; 2016. [cited 2020 Sep 18]. Available from: https://submit-etda.libraries.psu.edu/catalog/12970dus255.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Sohrabi baba heidary D. NOVEL PROCESSING COATING TECHNIQUES TOWARD IMPROVED ELECTRO-CERAMICS. [Thesis]. Penn State University; 2016. Available from: https://submit-etda.libraries.psu.edu/catalog/12970dus255

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


North Carolina State University

18. Du, Yan. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.

Degree: PhD, Electrical Engineering, 2009, North Carolina State University

 SiGe source/drain technology has been sucessfully applied to bulk metal oxide semiconductor field effect transistors (MOSFETs). Both channel mobility and source/drain contact resistivity are substantially… (more)

Subjects/Keywords: nanowire; SiGe; Pt ALD; strain; CBED

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Du, Y. (2009). Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. (Doctoral Dissertation). North Carolina State University. Retrieved from http://www.lib.ncsu.edu/resolver/1840.16/3433

Chicago Manual of Style (16th Edition):

Du, Yan. “Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.” 2009. Doctoral Dissertation, North Carolina State University. Accessed September 18, 2020. http://www.lib.ncsu.edu/resolver/1840.16/3433.

MLA Handbook (7th Edition):

Du, Yan. “Study of Si1-xGex Junction Formation for SOI Based CMOS Technology.” 2009. Web. 18 Sep 2020.

Vancouver:

Du Y. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. [Internet] [Doctoral dissertation]. North Carolina State University; 2009. [cited 2020 Sep 18]. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3433.

Council of Science Editors:

Du Y. Study of Si1-xGex Junction Formation for SOI Based CMOS Technology. [Doctoral Dissertation]. North Carolina State University; 2009. Available from: http://www.lib.ncsu.edu/resolver/1840.16/3433


NSYSU

19. Lee, Jung-Chan. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.

Degree: Master, Electrical Engineering, 2013, NSYSU

 In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP Schottky tunneling barrier… (more)

Subjects/Keywords: InP; ALD; Schottky tunneling barrier MOSFET; TiO2

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APA (6th Edition):

Lee, J. (2013). Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Jung-Chan. “Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.” 2013. Thesis, NSYSU. Accessed September 18, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Jung-Chan. “Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides.” 2013. Web. 18 Sep 2020.

Vancouver:

Lee J. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. [Internet] [Thesis]. NSYSU; 2013. [cited 2020 Sep 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee J. Fabrication and Characterization of InP Schottky Tunneling Barrier MOSFET with TiO2/Al2O3 Gate Oxides. [Thesis]. NSYSU; 2013. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0615113-163433

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

20. Tang, Tzu-hsien. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.

Degree: Master, Electrical Engineering, 2014, NSYSU

 In this study, the thin titanium oxide (TiO2) film and aluminum oxide (Al2O3) films which was used as gate oxides of InP asytmmetrical Schottky barrier… (more)

Subjects/Keywords: InP; TiO2; asymmetrical Schottky barrier MOSFET; ALD

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APA (6th Edition):

Tang, T. (2014). Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tang, Tzu-hsien. “Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.” 2014. Thesis, NSYSU. Accessed September 18, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tang, Tzu-hsien. “Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier.” 2014. Web. 18 Sep 2020.

Vancouver:

Tang T. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. [Internet] [Thesis]. NSYSU; 2014. [cited 2020 Sep 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tang T. Fabrication and Characterization of InP MOSFET with TiO2/Al2O3 For Gate Oxides and Source or Drain Schottky Tunneling Barrier. [Thesis]. NSYSU; 2014. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0718114-105515

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


NSYSU

21. Yang, Sheng-Hsiung. Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide.

Degree: Master, Electrical Engineering, 2012, NSYSU

 In this study, the thin titanium oxide (TiO2) film deposited on InP substrate was prepared by atomic layer deposition (ALD), which was used as gate… (more)

Subjects/Keywords: InP; TiO2; ALD; Schottky barrier MOSFET

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APA (6th Edition):

Yang, S. (2012). Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Sheng-Hsiung. “Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide.” 2012. Thesis, NSYSU. Accessed September 18, 2020. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Sheng-Hsiung. “Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide.” 2012. Web. 18 Sep 2020.

Vancouver:

Yang S. Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide. [Internet] [Thesis]. NSYSU; 2012. [cited 2020 Sep 18]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang S. Fabrication and characterization of InP Schottky barrier MOSFET with thin TiO2 gate oxide. [Thesis]. NSYSU; 2012. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0725112-152139

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Wayne State University

22. Ariyasena, Thiloka Chandima. (i)chromatographic Methods For Solute Descriptor Determinations (ii)ruthenium Substrate-Catalyzed Growth Of Nickel Nitride Thin Films By Atomic Layer Deposition.

Degree: PhD, Chemistry, 2015, Wayne State University

  Determination of distribution levels of environmentally important compounds in various environmental compartments is a major procedure in many fields including environmental risk assessment, food… (more)

Subjects/Keywords: ALD; Catalyzed; Chromatographic; Descriptor; Ruthenium; Substrate; Chemistry

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APA (6th Edition):

Ariyasena, T. C. (2015). (i)chromatographic Methods For Solute Descriptor Determinations (ii)ruthenium Substrate-Catalyzed Growth Of Nickel Nitride Thin Films By Atomic Layer Deposition. (Doctoral Dissertation). Wayne State University. Retrieved from https://digitalcommons.wayne.edu/oa_dissertations/1114

Chicago Manual of Style (16th Edition):

Ariyasena, Thiloka Chandima. “(i)chromatographic Methods For Solute Descriptor Determinations (ii)ruthenium Substrate-Catalyzed Growth Of Nickel Nitride Thin Films By Atomic Layer Deposition.” 2015. Doctoral Dissertation, Wayne State University. Accessed September 18, 2020. https://digitalcommons.wayne.edu/oa_dissertations/1114.

MLA Handbook (7th Edition):

Ariyasena, Thiloka Chandima. “(i)chromatographic Methods For Solute Descriptor Determinations (ii)ruthenium Substrate-Catalyzed Growth Of Nickel Nitride Thin Films By Atomic Layer Deposition.” 2015. Web. 18 Sep 2020.

Vancouver:

Ariyasena TC. (i)chromatographic Methods For Solute Descriptor Determinations (ii)ruthenium Substrate-Catalyzed Growth Of Nickel Nitride Thin Films By Atomic Layer Deposition. [Internet] [Doctoral dissertation]. Wayne State University; 2015. [cited 2020 Sep 18]. Available from: https://digitalcommons.wayne.edu/oa_dissertations/1114.

Council of Science Editors:

Ariyasena TC. (i)chromatographic Methods For Solute Descriptor Determinations (ii)ruthenium Substrate-Catalyzed Growth Of Nickel Nitride Thin Films By Atomic Layer Deposition. [Doctoral Dissertation]. Wayne State University; 2015. Available from: https://digitalcommons.wayne.edu/oa_dissertations/1114


Virginia Tech

23. Tollin, Craig Jeffrey. The characterization of Clostridium beijerinckii NRRL B592 cells transformed with plasmids containing the butanol-production genes under the control of constitutive promoters.

Degree: PhD, Biochemistry, 2012, Virginia Tech

 Clostridium beijerinckii is a spore-forming, obligate anaerobe that is capable of producing butanol, acetone and isopropanol. These industrial chemicals are traditionally known as solvents. The… (more)

Subjects/Keywords: ferredoxin; bcs; Clostridium; solventogenesis; adhA; ald; anaerobe

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APA (6th Edition):

Tollin, C. J. (2012). The characterization of Clostridium beijerinckii NRRL B592 cells transformed with plasmids containing the butanol-production genes under the control of constitutive promoters. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/77235

Chicago Manual of Style (16th Edition):

Tollin, Craig Jeffrey. “The characterization of Clostridium beijerinckii NRRL B592 cells transformed with plasmids containing the butanol-production genes under the control of constitutive promoters.” 2012. Doctoral Dissertation, Virginia Tech. Accessed September 18, 2020. http://hdl.handle.net/10919/77235.

MLA Handbook (7th Edition):

Tollin, Craig Jeffrey. “The characterization of Clostridium beijerinckii NRRL B592 cells transformed with plasmids containing the butanol-production genes under the control of constitutive promoters.” 2012. Web. 18 Sep 2020.

Vancouver:

Tollin CJ. The characterization of Clostridium beijerinckii NRRL B592 cells transformed with plasmids containing the butanol-production genes under the control of constitutive promoters. [Internet] [Doctoral dissertation]. Virginia Tech; 2012. [cited 2020 Sep 18]. Available from: http://hdl.handle.net/10919/77235.

Council of Science Editors:

Tollin CJ. The characterization of Clostridium beijerinckii NRRL B592 cells transformed with plasmids containing the butanol-production genes under the control of constitutive promoters. [Doctoral Dissertation]. Virginia Tech; 2012. Available from: http://hdl.handle.net/10919/77235


University of Debrecen

24. Szabó, Gergő. Polimer és alumínium-oxiddal bevont polimer páraáteresztésének vizsgálata .

Degree: DE – Természettudományi és Technológiai Kar – Fizikai Intézet, University of Debrecen

 Polimer műanyag csomagolófóliák páraáteresztő-képességét vizsgáltuk kezeletlen állapotban, illetve alumínium-oxid vékonyréteggel fedve. Eredményünk szerint egy 10-50nm vastag alumínium-oxid réteg jelentősen csökkenti a polimer fólia páraáteresztő-képességét. Kidolgoztunk… (more)

Subjects/Keywords: ald; diffúzió; polimer

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APA (6th Edition):

Szabó, G. (n.d.). Polimer és alumínium-oxiddal bevont polimer páraáteresztésének vizsgálata . (Thesis). University of Debrecen. Retrieved from http://hdl.handle.net/2437/240180

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Szabó, Gergő. “Polimer és alumínium-oxiddal bevont polimer páraáteresztésének vizsgálata .” Thesis, University of Debrecen. Accessed September 18, 2020. http://hdl.handle.net/2437/240180.

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Szabó, Gergő. “Polimer és alumínium-oxiddal bevont polimer páraáteresztésének vizsgálata .” Web. 18 Sep 2020.

Note: this citation may be lacking information needed for this citation format:
No year of publication.

Vancouver:

Szabó G. Polimer és alumínium-oxiddal bevont polimer páraáteresztésének vizsgálata . [Internet] [Thesis]. University of Debrecen; [cited 2020 Sep 18]. Available from: http://hdl.handle.net/2437/240180.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

Council of Science Editors:

Szabó G. Polimer és alumínium-oxiddal bevont polimer páraáteresztésének vizsgálata . [Thesis]. University of Debrecen; Available from: http://hdl.handle.net/2437/240180

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.


University of Colorado

25. Lee, Younghee. Atomic Layer Etching of Metal Oxides and Atomic Layer Deposition of Metal Fluorides.

Degree: PhD, Chemistry & Biochemistry, 2015, University of Colorado

  Atomic control of thin film growth and removal is essential for semiconductor processing. Atomic layer deposition (ALD) is a thin film deposition technique that… (more)

Subjects/Keywords: ALD; ALE; isotropic etching; Chemistry; Physical Chemistry

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APA (6th Edition):

Lee, Y. (2015). Atomic Layer Etching of Metal Oxides and Atomic Layer Deposition of Metal Fluorides. (Doctoral Dissertation). University of Colorado. Retrieved from https://scholar.colorado.edu/chem_gradetds/152

Chicago Manual of Style (16th Edition):

Lee, Younghee. “Atomic Layer Etching of Metal Oxides and Atomic Layer Deposition of Metal Fluorides.” 2015. Doctoral Dissertation, University of Colorado. Accessed September 18, 2020. https://scholar.colorado.edu/chem_gradetds/152.

MLA Handbook (7th Edition):

Lee, Younghee. “Atomic Layer Etching of Metal Oxides and Atomic Layer Deposition of Metal Fluorides.” 2015. Web. 18 Sep 2020.

Vancouver:

Lee Y. Atomic Layer Etching of Metal Oxides and Atomic Layer Deposition of Metal Fluorides. [Internet] [Doctoral dissertation]. University of Colorado; 2015. [cited 2020 Sep 18]. Available from: https://scholar.colorado.edu/chem_gradetds/152.

Council of Science Editors:

Lee Y. Atomic Layer Etching of Metal Oxides and Atomic Layer Deposition of Metal Fluorides. [Doctoral Dissertation]. University of Colorado; 2015. Available from: https://scholar.colorado.edu/chem_gradetds/152


Purdue University

26. Gharachorlou, Amir. SURFACE SCIENCE APPROACH TO ATOMIC LAYER DEPOSITION CHEMISTRY.

Degree: PhD, Chemical Engineering, 2014, Purdue University

 Recently, atomic layer deposition (ALD) has been employed as a promising technique for the growth of solid thin films with high conformality on complex geometries… (more)

Subjects/Keywords: ALD; catalyst; HREELS; STM; surface scinece; XPS

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gharachorlou, A. (2014). SURFACE SCIENCE APPROACH TO ATOMIC LAYER DEPOSITION CHEMISTRY. (Doctoral Dissertation). Purdue University. Retrieved from https://docs.lib.purdue.edu/open_access_dissertations/1077

Chicago Manual of Style (16th Edition):

Gharachorlou, Amir. “SURFACE SCIENCE APPROACH TO ATOMIC LAYER DEPOSITION CHEMISTRY.” 2014. Doctoral Dissertation, Purdue University. Accessed September 18, 2020. https://docs.lib.purdue.edu/open_access_dissertations/1077.

MLA Handbook (7th Edition):

Gharachorlou, Amir. “SURFACE SCIENCE APPROACH TO ATOMIC LAYER DEPOSITION CHEMISTRY.” 2014. Web. 18 Sep 2020.

Vancouver:

Gharachorlou A. SURFACE SCIENCE APPROACH TO ATOMIC LAYER DEPOSITION CHEMISTRY. [Internet] [Doctoral dissertation]. Purdue University; 2014. [cited 2020 Sep 18]. Available from: https://docs.lib.purdue.edu/open_access_dissertations/1077.

Council of Science Editors:

Gharachorlou A. SURFACE SCIENCE APPROACH TO ATOMIC LAYER DEPOSITION CHEMISTRY. [Doctoral Dissertation]. Purdue University; 2014. Available from: https://docs.lib.purdue.edu/open_access_dissertations/1077


Université de Sherbrooke

27. Plourde, Maxime. Fabrication d'un détecteur de charge basé sur un transistor monoélectronique métallique damascène.

Degree: 2018, Université de Sherbrooke

 Les transistors monoélectroniques (SET : Single Electron Transistor ) sont des dispositifs similaires aux transistors FET (Field Effect Transistor ) conventionnels. Ce qui distingue le… (more)

Subjects/Keywords: Détection de charge; Transistor monoélectronique; SET; ALD

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Plourde, M. (2018). Fabrication d'un détecteur de charge basé sur un transistor monoélectronique métallique damascène. (Masters Thesis). Université de Sherbrooke. Retrieved from http://hdl.handle.net/11143/12398

Chicago Manual of Style (16th Edition):

Plourde, Maxime. “Fabrication d'un détecteur de charge basé sur un transistor monoélectronique métallique damascène.” 2018. Masters Thesis, Université de Sherbrooke. Accessed September 18, 2020. http://hdl.handle.net/11143/12398.

MLA Handbook (7th Edition):

Plourde, Maxime. “Fabrication d'un détecteur de charge basé sur un transistor monoélectronique métallique damascène.” 2018. Web. 18 Sep 2020.

Vancouver:

Plourde M. Fabrication d'un détecteur de charge basé sur un transistor monoélectronique métallique damascène. [Internet] [Masters thesis]. Université de Sherbrooke; 2018. [cited 2020 Sep 18]. Available from: http://hdl.handle.net/11143/12398.

Council of Science Editors:

Plourde M. Fabrication d'un détecteur de charge basé sur un transistor monoélectronique métallique damascène. [Masters Thesis]. Université de Sherbrooke; 2018. Available from: http://hdl.handle.net/11143/12398


University of Minnesota

28. Halverson, Joshua. Group 13 Metal Doping of Cadmium Selenide Nanocrystals and Atomic Layer Deposition of Copper Oxide and Copper Aluminum Oxide.

Degree: PhD, Chemistry, 2017, University of Minnesota

 Semiconductors are a broad class of materials and by extension present a large array of possibilities for potential research. This thesis looks at two different… (more)

Subjects/Keywords: ALD; Copper Aluminum Oxide; Copper Oxide

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Halverson, J. (2017). Group 13 Metal Doping of Cadmium Selenide Nanocrystals and Atomic Layer Deposition of Copper Oxide and Copper Aluminum Oxide. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/188969

Chicago Manual of Style (16th Edition):

Halverson, Joshua. “Group 13 Metal Doping of Cadmium Selenide Nanocrystals and Atomic Layer Deposition of Copper Oxide and Copper Aluminum Oxide.” 2017. Doctoral Dissertation, University of Minnesota. Accessed September 18, 2020. http://hdl.handle.net/11299/188969.

MLA Handbook (7th Edition):

Halverson, Joshua. “Group 13 Metal Doping of Cadmium Selenide Nanocrystals and Atomic Layer Deposition of Copper Oxide and Copper Aluminum Oxide.” 2017. Web. 18 Sep 2020.

Vancouver:

Halverson J. Group 13 Metal Doping of Cadmium Selenide Nanocrystals and Atomic Layer Deposition of Copper Oxide and Copper Aluminum Oxide. [Internet] [Doctoral dissertation]. University of Minnesota; 2017. [cited 2020 Sep 18]. Available from: http://hdl.handle.net/11299/188969.

Council of Science Editors:

Halverson J. Group 13 Metal Doping of Cadmium Selenide Nanocrystals and Atomic Layer Deposition of Copper Oxide and Copper Aluminum Oxide. [Doctoral Dissertation]. University of Minnesota; 2017. Available from: http://hdl.handle.net/11299/188969


University of North Texas

29. Zhou, Mi. Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth.

Degree: 2011, University of North Texas

 The growth of single and multilayer BN films on several substrates was investigated. A typical atomic layer deposition (ALD) process was demonstrated on Si(111) substrate… (more)

Subjects/Keywords: Atomic layer deposition; boron nitride; grapheme; ALD

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zhou, M. (2011). Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc84305/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhou, Mi. “Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth.” 2011. Thesis, University of North Texas. Accessed September 18, 2020. https://digital.library.unt.edu/ark:/67531/metadc84305/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhou, Mi. “Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth.” 2011. Web. 18 Sep 2020.

Vancouver:

Zhou M. Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth. [Internet] [Thesis]. University of North Texas; 2011. [cited 2020 Sep 18]. Available from: https://digital.library.unt.edu/ark:/67531/metadc84305/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhou M. Boron Nitride by Atomic Layer Deposition: A Template for Graphene Growth. [Thesis]. University of North Texas; 2011. Available from: https://digital.library.unt.edu/ark:/67531/metadc84305/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Universidade Federal de Viçosa

30. Raniella Falchetto Bazoni. Caracterização de camadas de TiO2:Al2O3 por refletividade de raios-x.

Degree: 2013, Universidade Federal de Viçosa

Neste trabalho, camadas ultra-finas de óxidos, crescidas pela técnica de deposição por camada atômica, foram caracterizadas através de medidas de refletividade de raios-x. As amostras… (more)

Subjects/Keywords: FISICA DA MATERIA CONDENSADA; ALD; Refletividade; Ajustes; Softwares; ALD; Reflectivity; Fits; Softwares

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bazoni, R. F. (2013). Caracterização de camadas de TiO2:Al2O3 por refletividade de raios-x. (Thesis). Universidade Federal de Viçosa. Retrieved from http://www.tede.ufv.br/tedesimplificado/tde_busca/arquivo.php?codArquivo=4982

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bazoni, Raniella Falchetto. “Caracterização de camadas de TiO2:Al2O3 por refletividade de raios-x.” 2013. Thesis, Universidade Federal de Viçosa. Accessed September 18, 2020. http://www.tede.ufv.br/tedesimplificado/tde_busca/arquivo.php?codArquivo=4982.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bazoni, Raniella Falchetto. “Caracterização de camadas de TiO2:Al2O3 por refletividade de raios-x.” 2013. Web. 18 Sep 2020.

Vancouver:

Bazoni RF. Caracterização de camadas de TiO2:Al2O3 por refletividade de raios-x. [Internet] [Thesis]. Universidade Federal de Viçosa; 2013. [cited 2020 Sep 18]. Available from: http://www.tede.ufv.br/tedesimplificado/tde_busca/arquivo.php?codArquivo=4982.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bazoni RF. Caracterização de camadas de TiO2:Al2O3 por refletividade de raios-x. [Thesis]. Universidade Federal de Viçosa; 2013. Available from: http://www.tede.ufv.br/tedesimplificado/tde_busca/arquivo.php?codArquivo=4982

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2] [3] [4] [5] [6] [7]

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