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You searched for subject:( transistor as switch). Showing records 1 – 30 of 10311 total matches.

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Brno University of Technology

1. Peša, Ondřej. Zabezpečovací systém RD - napájecí zdroj pro základní desku .

Degree: 2013, Brno University of Technology

 Tato bakalářská práce se zabývá požadavky na napájení zabezpečovacích systému a obsahuje seznámení se s problematikou nabíjení olověných akumulátorů a s vysvětlením základního principu činnosti… (more)

Subjects/Keywords: Záložní napájecí zdroj; spínaný napájecí zdroj; nabíjení a vybíjení olověného akumulátoru; tranzistorový spínač; Backup power source; switched – mode power supply; charging and discharging lead acid batteries; transistor as switch

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Peša, O. (2013). Zabezpečovací systém RD - napájecí zdroj pro základní desku . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/72328

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Peša, Ondřej. “Zabezpečovací systém RD - napájecí zdroj pro základní desku .” 2013. Thesis, Brno University of Technology. Accessed October 21, 2019. http://hdl.handle.net/11012/72328.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Peša, Ondřej. “Zabezpečovací systém RD - napájecí zdroj pro základní desku .” 2013. Web. 21 Oct 2019.

Vancouver:

Peša O. Zabezpečovací systém RD - napájecí zdroj pro základní desku . [Internet] [Thesis]. Brno University of Technology; 2013. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/11012/72328.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Peša O. Zabezpečovací systém RD - napájecí zdroj pro základní desku . [Thesis]. Brno University of Technology; 2013. Available from: http://hdl.handle.net/11012/72328

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

2. Peša, Ondřej. Zabezpečovací systém RD - napájecí zdroj pro základní desku .

Degree: 2013, Brno University of Technology

 Tato bakalářská práce se zabývá požadavky na napájení zabezpečovacích systému a obsahuje seznámení se s problematikou nabíjení olověných akumulátorů a s vysvětlením základního principu činnosti… (more)

Subjects/Keywords: Záložní napájecí zdroj; spínaný napájecí zdroj; nabíjení a vybíjení olověného akumulátoru; tranzistorový spínač; odpojovač pro olověný akumulátor; Backup power source; switched – mode power supply; charging and discharging lead acid batteries; transistor as switch; disconnecting switch for sealed acid accumulator

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Peša, O. (2013). Zabezpečovací systém RD - napájecí zdroj pro základní desku . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/27118

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Peša, Ondřej. “Zabezpečovací systém RD - napájecí zdroj pro základní desku .” 2013. Thesis, Brno University of Technology. Accessed October 21, 2019. http://hdl.handle.net/11012/27118.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Peša, Ondřej. “Zabezpečovací systém RD - napájecí zdroj pro základní desku .” 2013. Web. 21 Oct 2019.

Vancouver:

Peša O. Zabezpečovací systém RD - napájecí zdroj pro základní desku . [Internet] [Thesis]. Brno University of Technology; 2013. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/11012/27118.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Peša O. Zabezpečovací systém RD - napájecí zdroj pro základní desku . [Thesis]. Brno University of Technology; 2013. Available from: http://hdl.handle.net/11012/27118

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

3. Benboujema, Chawki Mohamed. Etude d'une structure d'interrupteur 4 quadrants à faibles pertes à base de transistors à forts gains : No title available.

Degree: Docteur es, Electronique, 2011, Université François-Rabelais de Tours

S’inscrivant dans le cadre de la gestion de l’énergie dans l’habitat du programme SESAME du pôle de compétitivité S2E2, l’objectif de cette thèse est d’étudier… (more)

Subjects/Keywords: Bidirectionnalité; Interrupteur 4 quadrants; Commandabilité; Switch; Bidirectionality; Turn-off control; AC mains; Bipolar transistor

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APA (6th Edition):

Benboujema, C. M. (2011). Etude d'une structure d'interrupteur 4 quadrants à faibles pertes à base de transistors à forts gains : No title available. (Doctoral Dissertation). Université François-Rabelais de Tours. Retrieved from http://www.theses.fr/2011TOUR4049

Chicago Manual of Style (16th Edition):

Benboujema, Chawki Mohamed. “Etude d'une structure d'interrupteur 4 quadrants à faibles pertes à base de transistors à forts gains : No title available.” 2011. Doctoral Dissertation, Université François-Rabelais de Tours. Accessed October 21, 2019. http://www.theses.fr/2011TOUR4049.

MLA Handbook (7th Edition):

Benboujema, Chawki Mohamed. “Etude d'une structure d'interrupteur 4 quadrants à faibles pertes à base de transistors à forts gains : No title available.” 2011. Web. 21 Oct 2019.

Vancouver:

Benboujema CM. Etude d'une structure d'interrupteur 4 quadrants à faibles pertes à base de transistors à forts gains : No title available. [Internet] [Doctoral dissertation]. Université François-Rabelais de Tours; 2011. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2011TOUR4049.

Council of Science Editors:

Benboujema CM. Etude d'une structure d'interrupteur 4 quadrants à faibles pertes à base de transistors à forts gains : No title available. [Doctoral Dissertation]. Université François-Rabelais de Tours; 2011. Available from: http://www.theses.fr/2011TOUR4049


Universidade do Rio Grande do Sul

4. Rosa Junior, Leomar Soares da. Automatic generation and evaluation of transistor networks in different logic styles.

Degree: 2008, Universidade do Rio Grande do Sul

O projeto e o desenvolvimento de circuitos integrados é um dos mais importantes e aquecidos segmentos da indústria eletrônica da atualidade. Neste cenário, ferramentas de… (more)

Subjects/Keywords: Microeletrônica; Transistor networks; Logic cells; Análise de redes; Technology mapping; Transistores; Circuitos elétricos; Switch theory; CMOS logic styles

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APA (6th Edition):

Rosa Junior, L. S. d. (2008). Automatic generation and evaluation of transistor networks in different logic styles. (Thesis). Universidade do Rio Grande do Sul. Retrieved from http://hdl.handle.net/10183/61869

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Rosa Junior, Leomar Soares da. “Automatic generation and evaluation of transistor networks in different logic styles.” 2008. Thesis, Universidade do Rio Grande do Sul. Accessed October 21, 2019. http://hdl.handle.net/10183/61869.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Rosa Junior, Leomar Soares da. “Automatic generation and evaluation of transistor networks in different logic styles.” 2008. Web. 21 Oct 2019.

Vancouver:

Rosa Junior LSd. Automatic generation and evaluation of transistor networks in different logic styles. [Internet] [Thesis]. Universidade do Rio Grande do Sul; 2008. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10183/61869.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Rosa Junior LSd. Automatic generation and evaluation of transistor networks in different logic styles. [Thesis]. Universidade do Rio Grande do Sul; 2008. Available from: http://hdl.handle.net/10183/61869

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

5. Bartoň, Ondřej. Bipolární a unipolární tranzistorové spínače pro laboratorní výuku .

Degree: 2019, Brno University of Technology

 Tato práce se zabývá návrhem laboratorního přípravku s bipolárními a unipolárními tranzistorovými spínači pro laboratorní výuku. Rozebírá jednotlivé prvky potřebné k navržení obvodu, jako jsou… (more)

Subjects/Keywords: tranzistor; spínač; generátor obdélníkového signálu; zesilovač; střída; kmitočet; transistor; switch; rectangular signal generator; power amplifier; duty cycle; frequency

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APA (6th Edition):

Bartoň, O. (2019). Bipolární a unipolární tranzistorové spínače pro laboratorní výuku . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/173650

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bartoň, Ondřej. “Bipolární a unipolární tranzistorové spínače pro laboratorní výuku .” 2019. Thesis, Brno University of Technology. Accessed October 21, 2019. http://hdl.handle.net/11012/173650.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bartoň, Ondřej. “Bipolární a unipolární tranzistorové spínače pro laboratorní výuku .” 2019. Web. 21 Oct 2019.

Vancouver:

Bartoň O. Bipolární a unipolární tranzistorové spínače pro laboratorní výuku . [Internet] [Thesis]. Brno University of Technology; 2019. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/11012/173650.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bartoň O. Bipolární a unipolární tranzistorové spínače pro laboratorní výuku . [Thesis]. Brno University of Technology; 2019. Available from: http://hdl.handle.net/11012/173650

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Purdue University

6. Diep, Vinh Quang. "Transistor-Like" Spin Nano-Switches: Physics and Applications.

Degree: PhD, Electrical and Computer Engineering, 2015, Purdue University

 Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are… (more)

Subjects/Keywords: input-output isolation and gain; magnetic coupling; spin based neural networks; spin switch oscillator; stray fields pMTJ; Transistor-like switches

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APA (6th Edition):

Diep, V. Q. (2015). "Transistor-Like" Spin Nano-Switches: Physics and Applications. (Doctoral Dissertation). Purdue University. Retrieved from https://docs.lib.purdue.edu/open_access_dissertations/1458

Chicago Manual of Style (16th Edition):

Diep, Vinh Quang. “"Transistor-Like" Spin Nano-Switches: Physics and Applications.” 2015. Doctoral Dissertation, Purdue University. Accessed October 21, 2019. https://docs.lib.purdue.edu/open_access_dissertations/1458.

MLA Handbook (7th Edition):

Diep, Vinh Quang. “"Transistor-Like" Spin Nano-Switches: Physics and Applications.” 2015. Web. 21 Oct 2019.

Vancouver:

Diep VQ. "Transistor-Like" Spin Nano-Switches: Physics and Applications. [Internet] [Doctoral dissertation]. Purdue University; 2015. [cited 2019 Oct 21]. Available from: https://docs.lib.purdue.edu/open_access_dissertations/1458.

Council of Science Editors:

Diep VQ. "Transistor-Like" Spin Nano-Switches: Physics and Applications. [Doctoral Dissertation]. Purdue University; 2015. Available from: https://docs.lib.purdue.edu/open_access_dissertations/1458


University of Illinois – Urbana-Champaign

7. Pang, Liang. Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy.

Degree: MS, 1200, 2010, University of Illinois – Urbana-Champaign

 This thesis work presents a comprehensive study of the application of the PAMBE-SAG technique to fabrication of high-power GaN-based switching HEMTs. First, a detailed study… (more)

Subjects/Keywords: AlGaN/GaN; High Electron Mobility Transistor (HEMT); Selective area growth (SAG); Plasma-assisted molecular beam epitaxy (PAMBE); power switch; current density; on-state resistance; breakdown voltage; Gallium Nitride (GaN)

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APA (6th Edition):

Pang, L. (2010). Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/16009

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pang, Liang. “Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy.” 2010. Thesis, University of Illinois – Urbana-Champaign. Accessed October 21, 2019. http://hdl.handle.net/2142/16009.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pang, Liang. “Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy.” 2010. Web. 21 Oct 2019.

Vancouver:

Pang L. Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2010. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/2142/16009.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pang L. Performance enhancement of GaN-based high-power hemts by selective-area growth using plasma-assisted molecular beam epitaxy. [Thesis]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/16009

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

8. Dvořák, Petr. DC/DC měnič 24 V / 320 V / 60 W pro záložní zdroj s galvanickým oddělením .

Degree: 2018, Brno University of Technology

 Tato bakalářská práce se zabývá návrhem, dimenzováním a realizací DC/DC měniče 24 V / 320 V s výkonem 60 W. V první části jsou zde… (more)

Subjects/Keywords: Spínaný zdroj; blokující měnič; impulzní transformátor; tranzistorový spínač; integrovaný obvod UC3844; Switched source; flyback converter; pulse transformer; transistor switch; integrated circuit UC3844

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APA (6th Edition):

Dvořák, P. (2018). DC/DC měnič 24 V / 320 V / 60 W pro záložní zdroj s galvanickým oddělením . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/81624

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dvořák, Petr. “DC/DC měnič 24 V / 320 V / 60 W pro záložní zdroj s galvanickým oddělením .” 2018. Thesis, Brno University of Technology. Accessed October 21, 2019. http://hdl.handle.net/11012/81624.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dvořák, Petr. “DC/DC měnič 24 V / 320 V / 60 W pro záložní zdroj s galvanickým oddělením .” 2018. Web. 21 Oct 2019.

Vancouver:

Dvořák P. DC/DC měnič 24 V / 320 V / 60 W pro záložní zdroj s galvanickým oddělením . [Internet] [Thesis]. Brno University of Technology; 2018. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/11012/81624.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dvořák P. DC/DC měnič 24 V / 320 V / 60 W pro záložní zdroj s galvanickým oddělením . [Thesis]. Brno University of Technology; 2018. Available from: http://hdl.handle.net/11012/81624

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

9. Koncer, Adam. Miniaturní DC/DC zvyšující měnič .

Degree: 2012, Brno University of Technology

 Tato práce se zabývá návrhem a realizací stejnosměrného miniaturního spínaného měniče. Nejdříve se z teoretického hlediska zaměřím na vysvětlení funkce a rozdělení stejnosměrných spínaných měničů.… (more)

Subjects/Keywords: Spínaný měnič; zvyšující měnič; pulzní měnič; tranzistorový spínač; integrovaný obvod LM3488.; Switched-mode converter; step-up converter; pulse converter; transistor switch; integrated circuit LM3488.

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APA (6th Edition):

Koncer, A. (2012). Miniaturní DC/DC zvyšující měnič . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/17563

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Koncer, Adam. “Miniaturní DC/DC zvyšující měnič .” 2012. Thesis, Brno University of Technology. Accessed October 21, 2019. http://hdl.handle.net/11012/17563.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Koncer, Adam. “Miniaturní DC/DC zvyšující měnič .” 2012. Web. 21 Oct 2019.

Vancouver:

Koncer A. Miniaturní DC/DC zvyšující měnič . [Internet] [Thesis]. Brno University of Technology; 2012. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/11012/17563.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Koncer A. Miniaturní DC/DC zvyšující měnič . [Thesis]. Brno University of Technology; 2012. Available from: http://hdl.handle.net/11012/17563

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

10. Wan, Jing. Dispositifs innovants à pente sous le seuil abrupte : du TEFT au Z²-FET : (Innovative sharp switching devices : from TFET to Z2-FET.

Degree: Docteur es, Sciences et technologie industrielles, 2012, Université de Grenoble

Tunnel à effet de champ (TFET) et un nouveau composant MOS à rétroaction que nous avons nommé le Z2-FET.Le Z2-FET est envisagé pour la logique… (more)

Subjects/Keywords: Commutation abrupte; Silicium-sur-isolant (SOI); Tunnel FET; MOSFET; Rétroaction; Z2-FET; Cellule mémoire à un transistor.; Sharp switch; Silicon-on-insulator (SOI); Tunneling FET; MOSFET; Feedback; Z2-FET; Single-transistor memory

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wan, J. (2012). Dispositifs innovants à pente sous le seuil abrupte : du TEFT au Z²-FET : (Innovative sharp switching devices : from TFET to Z2-FET. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2012GRENT052

Chicago Manual of Style (16th Edition):

Wan, Jing. “Dispositifs innovants à pente sous le seuil abrupte : du TEFT au Z²-FET : (Innovative sharp switching devices : from TFET to Z2-FET.” 2012. Doctoral Dissertation, Université de Grenoble. Accessed October 21, 2019. http://www.theses.fr/2012GRENT052.

MLA Handbook (7th Edition):

Wan, Jing. “Dispositifs innovants à pente sous le seuil abrupte : du TEFT au Z²-FET : (Innovative sharp switching devices : from TFET to Z2-FET.” 2012. Web. 21 Oct 2019.

Vancouver:

Wan J. Dispositifs innovants à pente sous le seuil abrupte : du TEFT au Z²-FET : (Innovative sharp switching devices : from TFET to Z2-FET. [Internet] [Doctoral dissertation]. Université de Grenoble; 2012. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2012GRENT052.

Council of Science Editors:

Wan J. Dispositifs innovants à pente sous le seuil abrupte : du TEFT au Z²-FET : (Innovative sharp switching devices : from TFET to Z2-FET. [Doctoral Dissertation]. Université de Grenoble; 2012. Available from: http://www.theses.fr/2012GRENT052

11. Ihuel, François. Etude et réalisation d'un interrupteur de puissance monolithique bidirectionnel sur substrat SOI : No title available.

Degree: Docteur es, Electronique, 2012, Université François-Rabelais de Tours

Ces travaux traitent de la réalisation d’un prototype d’interrupteur monolithique bidirectionnel à base de transistor bipolaire. A terme, l’objectif est de développer un interrupteur intelligent… (more)

Subjects/Keywords: Interrupteur monolithique; Transistor bipolaire; Bidirectionnalité; Commandabilité; Faible perte; Autoblindage; SOI; Base fine; Recuit CTA; Simulation numérique; Ségrégation; Monolithic switch; Bipolar transistor; Bidirectionality; Commandability; Low losses; Shielding effect; SOI; Thin base; CTA; Realization; Segregation; Simulation

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APA (6th Edition):

Ihuel, F. (2012). Etude et réalisation d'un interrupteur de puissance monolithique bidirectionnel sur substrat SOI : No title available. (Doctoral Dissertation). Université François-Rabelais de Tours. Retrieved from http://www.theses.fr/2012TOUR4043

Chicago Manual of Style (16th Edition):

Ihuel, François. “Etude et réalisation d'un interrupteur de puissance monolithique bidirectionnel sur substrat SOI : No title available.” 2012. Doctoral Dissertation, Université François-Rabelais de Tours. Accessed October 21, 2019. http://www.theses.fr/2012TOUR4043.

MLA Handbook (7th Edition):

Ihuel, François. “Etude et réalisation d'un interrupteur de puissance monolithique bidirectionnel sur substrat SOI : No title available.” 2012. Web. 21 Oct 2019.

Vancouver:

Ihuel F. Etude et réalisation d'un interrupteur de puissance monolithique bidirectionnel sur substrat SOI : No title available. [Internet] [Doctoral dissertation]. Université François-Rabelais de Tours; 2012. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2012TOUR4043.

Council of Science Editors:

Ihuel F. Etude et réalisation d'un interrupteur de puissance monolithique bidirectionnel sur substrat SOI : No title available. [Doctoral Dissertation]. Université François-Rabelais de Tours; 2012. Available from: http://www.theses.fr/2012TOUR4043

12. Porman, Allison Marly. Identification and Regulation of White-Opaque Phenotypic Switching in Candida tropicalis.

Degree: PhD, Molecular Biology, Cell Biology, and Biochemistry, 2015, Brown University

 Fungal pathogens utilize a variety of strategies to adapt to environmental cues and to thrive in different host niches. This includes phenotypic switching, in which… (more)

Subjects/Keywords: phenotypic switch

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APA (6th Edition):

Porman, A. M. (2015). Identification and Regulation of White-Opaque Phenotypic Switching in Candida tropicalis. (Doctoral Dissertation). Brown University. Retrieved from https://repository.library.brown.edu/studio/item/bdr:419367/

Chicago Manual of Style (16th Edition):

Porman, Allison Marly. “Identification and Regulation of White-Opaque Phenotypic Switching in Candida tropicalis.” 2015. Doctoral Dissertation, Brown University. Accessed October 21, 2019. https://repository.library.brown.edu/studio/item/bdr:419367/.

MLA Handbook (7th Edition):

Porman, Allison Marly. “Identification and Regulation of White-Opaque Phenotypic Switching in Candida tropicalis.” 2015. Web. 21 Oct 2019.

Vancouver:

Porman AM. Identification and Regulation of White-Opaque Phenotypic Switching in Candida tropicalis. [Internet] [Doctoral dissertation]. Brown University; 2015. [cited 2019 Oct 21]. Available from: https://repository.library.brown.edu/studio/item/bdr:419367/.

Council of Science Editors:

Porman AM. Identification and Regulation of White-Opaque Phenotypic Switching in Candida tropicalis. [Doctoral Dissertation]. Brown University; 2015. Available from: https://repository.library.brown.edu/studio/item/bdr:419367/


Brno University of Technology

13. Jahn, Michal. Analogový spínač pro aplikace v technice spínaných proudů .

Degree: 2012, Brno University of Technology

 Tato bakalářská práce se zabývá návrhem analogového spínače v technice spínaných proudů, který je realizován technologií CMOS. Návrh těchto spínačů byl realizován a následně simulován… (more)

Subjects/Keywords: Technika spínaných proudů (SI); spínač; proudová paměťová buňka; technologie CMOS; tranzistor PMOS a NMOS; injekce náboje; pronikání hodinového signálu.; Switched-current (SI) technique; switch; current memory cell; CMOS process; transistor PMOS and NMOS; charge injection; clock-feedthrough.

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APA (6th Edition):

Jahn, M. (2012). Analogový spínač pro aplikace v technice spínaných proudů . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/12503

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jahn, Michal. “Analogový spínač pro aplikace v technice spínaných proudů .” 2012. Thesis, Brno University of Technology. Accessed October 21, 2019. http://hdl.handle.net/11012/12503.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jahn, Michal. “Analogový spínač pro aplikace v technice spínaných proudů .” 2012. Web. 21 Oct 2019.

Vancouver:

Jahn M. Analogový spínač pro aplikace v technice spínaných proudů . [Internet] [Thesis]. Brno University of Technology; 2012. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/11012/12503.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jahn M. Analogový spínač pro aplikace v technice spínaných proudů . [Thesis]. Brno University of Technology; 2012. Available from: http://hdl.handle.net/11012/12503

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Virginia Tech

14. Zhu, Yan. Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors.

Degree: PhD, Electrical and Computer Engineering, 2014, Virginia Tech

 Reducing supply voltage is a promising way to address the power dissipation in nano-electronic circuits. However, the fundamental lower limit of subthreshold slope (SS) within… (more)

Subjects/Keywords: Tunnel field-effect-transistor; mixed As/Sb and Ge heterostructures; molecular beam epitaxy; heterointerface engineering; high temperature reliability analysis; structure and device characterization

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APA (6th Edition):

Zhu, Y. (2014). Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors. (Doctoral Dissertation). Virginia Tech. Retrieved from http://hdl.handle.net/10919/47791

Chicago Manual of Style (16th Edition):

Zhu, Yan. “Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors.” 2014. Doctoral Dissertation, Virginia Tech. Accessed October 21, 2019. http://hdl.handle.net/10919/47791.

MLA Handbook (7th Edition):

Zhu, Yan. “Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors.” 2014. Web. 21 Oct 2019.

Vancouver:

Zhu Y. Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors. [Internet] [Doctoral dissertation]. Virginia Tech; 2014. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10919/47791.

Council of Science Editors:

Zhu Y. Mixed As/Sb and tensile strained Ge/InGaAs heterostructures for low-power tunnel field effect transistors. [Doctoral Dissertation]. Virginia Tech; 2014. Available from: http://hdl.handle.net/10919/47791


University of Illinois – Urbana-Champaign

15. James, Adam L. Process Development for High Speed Transistor Laser Operation.

Degree: PhD, 1200, 2011, University of Illinois – Urbana-Champaign

 The transistor laser (TL) o ers advantages over conventional diode laser structure. The TL uses high base doping and minority carrier collection to reduce the… (more)

Subjects/Keywords: Transistor Laser

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APA (6th Edition):

James, A. L. (2011). Process Development for High Speed Transistor Laser Operation. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18567

Chicago Manual of Style (16th Edition):

James, Adam L. “Process Development for High Speed Transistor Laser Operation.” 2011. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed October 21, 2019. http://hdl.handle.net/2142/18567.

MLA Handbook (7th Edition):

James, Adam L. “Process Development for High Speed Transistor Laser Operation.” 2011. Web. 21 Oct 2019.

Vancouver:

James AL. Process Development for High Speed Transistor Laser Operation. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2011. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/2142/18567.

Council of Science Editors:

James AL. Process Development for High Speed Transistor Laser Operation. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18567


University of Missouri – Columbia

16. Kinsey, Nathaniel G. Photoconductive switching using wideband semiconductor materials.

Degree: 2012, University of Missouri – Columbia

 [ACCESS RESTRICTED TO THE UNIVERSITY OF MISSOURI AT AUTHOR'S REQUEST.] A solid state switch concept based on the photoconductive properties of the aluminum gallium nitride… (more)

Subjects/Keywords: solid state switch; gallium semiconductor; photoconductive switch

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APA (6th Edition):

Kinsey, N. G. (2012). Photoconductive switching using wideband semiconductor materials. (Thesis). University of Missouri – Columbia. Retrieved from http://hdl.handle.net/10355/36778

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kinsey, Nathaniel G. “Photoconductive switching using wideband semiconductor materials.” 2012. Thesis, University of Missouri – Columbia. Accessed October 21, 2019. http://hdl.handle.net/10355/36778.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kinsey, Nathaniel G. “Photoconductive switching using wideband semiconductor materials.” 2012. Web. 21 Oct 2019.

Vancouver:

Kinsey NG. Photoconductive switching using wideband semiconductor materials. [Internet] [Thesis]. University of Missouri – Columbia; 2012. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10355/36778.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kinsey NG. Photoconductive switching using wideband semiconductor materials. [Thesis]. University of Missouri – Columbia; 2012. Available from: http://hdl.handle.net/10355/36778

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Delft University of Technology

17. Skalis, N. Performance Analysis and Cost-Performance Tradeoffs of a High Performance Partially Buffered Crossbar Switch:.

Degree: 2010, Delft University of Technology

 Why is it hard to build high-speed routers? Because high-speed routers are like marriages; they are unpredictable, provide no guar- antees, and become vulnerable in… (more)

Subjects/Keywords: switch; router; scheduling

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APA (6th Edition):

Skalis, N. (2010). Performance Analysis and Cost-Performance Tradeoffs of a High Performance Partially Buffered Crossbar Switch:. (Masters Thesis). Delft University of Technology. Retrieved from http://resolver.tudelft.nl/uuid:b0590baf-4af3-49f7-9a69-4718842bfc0f

Chicago Manual of Style (16th Edition):

Skalis, N. “Performance Analysis and Cost-Performance Tradeoffs of a High Performance Partially Buffered Crossbar Switch:.” 2010. Masters Thesis, Delft University of Technology. Accessed October 21, 2019. http://resolver.tudelft.nl/uuid:b0590baf-4af3-49f7-9a69-4718842bfc0f.

MLA Handbook (7th Edition):

Skalis, N. “Performance Analysis and Cost-Performance Tradeoffs of a High Performance Partially Buffered Crossbar Switch:.” 2010. Web. 21 Oct 2019.

Vancouver:

Skalis N. Performance Analysis and Cost-Performance Tradeoffs of a High Performance Partially Buffered Crossbar Switch:. [Internet] [Masters thesis]. Delft University of Technology; 2010. [cited 2019 Oct 21]. Available from: http://resolver.tudelft.nl/uuid:b0590baf-4af3-49f7-9a69-4718842bfc0f.

Council of Science Editors:

Skalis N. Performance Analysis and Cost-Performance Tradeoffs of a High Performance Partially Buffered Crossbar Switch:. [Masters Thesis]. Delft University of Technology; 2010. Available from: http://resolver.tudelft.nl/uuid:b0590baf-4af3-49f7-9a69-4718842bfc0f


Université de Grenoble

18. Morvan, Siméon. Transistors MOS sur films minces de Silicium-sur-Isolant (SOI) complètement désertés pour le noeud technologique 10nm : MOS transistors on thin fully depleted Silicon-On-Insulator (SOI) films for the 10nm technological node.

Degree: Docteur es, Sciences et technologie industrielles, 2013, Université de Grenoble

Depuis plusieurs générations technologiques, la réduction des dimensions des transistors à effet de champ Métal-Oxyde-Semiconducteur (MOSFET) n'est plus suffisante pour augmenter à elle seule les… (more)

Subjects/Keywords: Microélectronique; Transistor; FDSOI; Microelectronics; Transistor; FDSOI

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APA (6th Edition):

Morvan, S. (2013). Transistors MOS sur films minces de Silicium-sur-Isolant (SOI) complètement désertés pour le noeud technologique 10nm : MOS transistors on thin fully depleted Silicon-On-Insulator (SOI) films for the 10nm technological node. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2013GRENT047

Chicago Manual of Style (16th Edition):

Morvan, Siméon. “Transistors MOS sur films minces de Silicium-sur-Isolant (SOI) complètement désertés pour le noeud technologique 10nm : MOS transistors on thin fully depleted Silicon-On-Insulator (SOI) films for the 10nm technological node.” 2013. Doctoral Dissertation, Université de Grenoble. Accessed October 21, 2019. http://www.theses.fr/2013GRENT047.

MLA Handbook (7th Edition):

Morvan, Siméon. “Transistors MOS sur films minces de Silicium-sur-Isolant (SOI) complètement désertés pour le noeud technologique 10nm : MOS transistors on thin fully depleted Silicon-On-Insulator (SOI) films for the 10nm technological node.” 2013. Web. 21 Oct 2019.

Vancouver:

Morvan S. Transistors MOS sur films minces de Silicium-sur-Isolant (SOI) complètement désertés pour le noeud technologique 10nm : MOS transistors on thin fully depleted Silicon-On-Insulator (SOI) films for the 10nm technological node. [Internet] [Doctoral dissertation]. Université de Grenoble; 2013. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2013GRENT047.

Council of Science Editors:

Morvan S. Transistors MOS sur films minces de Silicium-sur-Isolant (SOI) complètement désertés pour le noeud technologique 10nm : MOS transistors on thin fully depleted Silicon-On-Insulator (SOI) films for the 10nm technological node. [Doctoral Dissertation]. Université de Grenoble; 2013. Available from: http://www.theses.fr/2013GRENT047


Université de Grenoble

19. Diouf, Cheikh. Caractérisation électrique des transistors d’architecture innovante pour les longueurs de grilles décananométriques : Electrical Characterization of sub 100nm MOS transsitors with innovative architecture.

Degree: Docteur es, Nano electronique et nano technologies, 2013, Université de Grenoble

La taille du transistor MOS ne cesse de diminuer pour des questions de performance et de rentabilité de fabrication. Les procédés de fabrication évoluent, l'architecture… (more)

Subjects/Keywords: Caractérisation; Transistor; Mos; Characterization; Transistor; Mos; 620

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APA (6th Edition):

Diouf, C. (2013). Caractérisation électrique des transistors d’architecture innovante pour les longueurs de grilles décananométriques : Electrical Characterization of sub 100nm MOS transsitors with innovative architecture. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2013GRENT082

Chicago Manual of Style (16th Edition):

Diouf, Cheikh. “Caractérisation électrique des transistors d’architecture innovante pour les longueurs de grilles décananométriques : Electrical Characterization of sub 100nm MOS transsitors with innovative architecture.” 2013. Doctoral Dissertation, Université de Grenoble. Accessed October 21, 2019. http://www.theses.fr/2013GRENT082.

MLA Handbook (7th Edition):

Diouf, Cheikh. “Caractérisation électrique des transistors d’architecture innovante pour les longueurs de grilles décananométriques : Electrical Characterization of sub 100nm MOS transsitors with innovative architecture.” 2013. Web. 21 Oct 2019.

Vancouver:

Diouf C. Caractérisation électrique des transistors d’architecture innovante pour les longueurs de grilles décananométriques : Electrical Characterization of sub 100nm MOS transsitors with innovative architecture. [Internet] [Doctoral dissertation]. Université de Grenoble; 2013. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2013GRENT082.

Council of Science Editors:

Diouf C. Caractérisation électrique des transistors d’architecture innovante pour les longueurs de grilles décananométriques : Electrical Characterization of sub 100nm MOS transsitors with innovative architecture. [Doctoral Dissertation]. Université de Grenoble; 2013. Available from: http://www.theses.fr/2013GRENT082


University of Cambridge

20. Cheng, Xiang. TFTs circuit simulation models and analogue building block designs .

Degree: 2018, University of Cambridge

 Building functional thin-film-transistor (TFT) circuits is crucial for applications such as wearable, implantable and transparent electronics. Therefore, developing a compact model of an emerging semiconductor… (more)

Subjects/Keywords: Thin film transistor; analogue circuit; Transistor modelling

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APA (6th Edition):

Cheng, X. (2018). TFTs circuit simulation models and analogue building block designs . (Thesis). University of Cambridge. Retrieved from https://www.repository.cam.ac.uk/handle/1810/271853

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Cheng, Xiang. “TFTs circuit simulation models and analogue building block designs .” 2018. Thesis, University of Cambridge. Accessed October 21, 2019. https://www.repository.cam.ac.uk/handle/1810/271853.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Cheng, Xiang. “TFTs circuit simulation models and analogue building block designs .” 2018. Web. 21 Oct 2019.

Vancouver:

Cheng X. TFTs circuit simulation models and analogue building block designs . [Internet] [Thesis]. University of Cambridge; 2018. [cited 2019 Oct 21]. Available from: https://www.repository.cam.ac.uk/handle/1810/271853.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cheng X. TFTs circuit simulation models and analogue building block designs . [Thesis]. University of Cambridge; 2018. Available from: https://www.repository.cam.ac.uk/handle/1810/271853

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Toumi, Ilhem. Contribution à l'étude et réalisation d'une technique ultra rapide pour l'étude de la dégradation NBTI.

Degree: 2015, Université M'Hamed Bougara Boumerdès

79 p. : ill. ; 30 cm

Parmi les modes de dégradation limitant la fiabilité des transistors MOSFET, un " nouveau " phénomène communément appelé… (more)

Subjects/Keywords: Transistor; Champ électrique

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APA (6th Edition):

Toumi, I. (2015). Contribution à l'étude et réalisation d'une technique ultra rapide pour l'étude de la dégradation NBTI. (Thesis). Université M'Hamed Bougara Boumerdès. Retrieved from http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/2745

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Toumi, Ilhem. “Contribution à l'étude et réalisation d'une technique ultra rapide pour l'étude de la dégradation NBTI.” 2015. Thesis, Université M'Hamed Bougara Boumerdès. Accessed October 21, 2019. http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/2745.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Toumi, Ilhem. “Contribution à l'étude et réalisation d'une technique ultra rapide pour l'étude de la dégradation NBTI.” 2015. Web. 21 Oct 2019.

Vancouver:

Toumi I. Contribution à l'étude et réalisation d'une technique ultra rapide pour l'étude de la dégradation NBTI. [Internet] [Thesis]. Université M'Hamed Bougara Boumerdès; 2015. [cited 2019 Oct 21]. Available from: http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/2745.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Toumi I. Contribution à l'étude et réalisation d'une technique ultra rapide pour l'étude de la dégradation NBTI. [Thesis]. Université M'Hamed Bougara Boumerdès; 2015. Available from: http://dlibrary.univ-boumerdes.dz:8080/handle/123456789/2745

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Victoria University of Wellington

22. Burke-Govey, Conor Patrick. ZnO nanowires and their application in field-effect transistors.

Degree: 2018, Victoria University of Wellington

 ZnO nanowires have shown great promise as a semiconducting material for a variety of different electronic applications at the nanoscale, and can be easily synthesised… (more)

Subjects/Keywords: ZnO; Nanowire; Transistor

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APA (6th Edition):

Burke-Govey, C. P. (2018). ZnO nanowires and their application in field-effect transistors. (Doctoral Dissertation). Victoria University of Wellington. Retrieved from http://hdl.handle.net/10063/6927

Chicago Manual of Style (16th Edition):

Burke-Govey, Conor Patrick. “ZnO nanowires and their application in field-effect transistors.” 2018. Doctoral Dissertation, Victoria University of Wellington. Accessed October 21, 2019. http://hdl.handle.net/10063/6927.

MLA Handbook (7th Edition):

Burke-Govey, Conor Patrick. “ZnO nanowires and their application in field-effect transistors.” 2018. Web. 21 Oct 2019.

Vancouver:

Burke-Govey CP. ZnO nanowires and their application in field-effect transistors. [Internet] [Doctoral dissertation]. Victoria University of Wellington; 2018. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10063/6927.

Council of Science Editors:

Burke-Govey CP. ZnO nanowires and their application in field-effect transistors. [Doctoral Dissertation]. Victoria University of Wellington; 2018. Available from: http://hdl.handle.net/10063/6927


University of Notre Dame

23. Kristof Tahy. Fabrication and characterization of 2D graphene and graphene nanoribbon field effect transistors</h1>.

Degree: MSin Electrical Engineering, Electrical Engineering, 2009, University of Notre Dame

  The recent discovery of graphene, a single atomic sheet of graphite, has ignited intense research activities to explore the electronic properties of this novel… (more)

Subjects/Keywords: nanoribbon; graphene; transistor

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APA (6th Edition):

Tahy, K. (2009). Fabrication and characterization of 2D graphene and graphene nanoribbon field effect transistors</h1>. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/bn999595w8s

Chicago Manual of Style (16th Edition):

Tahy, Kristof. “Fabrication and characterization of 2D graphene and graphene nanoribbon field effect transistors</h1>.” 2009. Masters Thesis, University of Notre Dame. Accessed October 21, 2019. https://curate.nd.edu/show/bn999595w8s.

MLA Handbook (7th Edition):

Tahy, Kristof. “Fabrication and characterization of 2D graphene and graphene nanoribbon field effect transistors</h1>.” 2009. Web. 21 Oct 2019.

Vancouver:

Tahy K. Fabrication and characterization of 2D graphene and graphene nanoribbon field effect transistors</h1>. [Internet] [Masters thesis]. University of Notre Dame; 2009. [cited 2019 Oct 21]. Available from: https://curate.nd.edu/show/bn999595w8s.

Council of Science Editors:

Tahy K. Fabrication and characterization of 2D graphene and graphene nanoribbon field effect transistors</h1>. [Masters Thesis]. University of Notre Dame; 2009. Available from: https://curate.nd.edu/show/bn999595w8s


University of Notre Dame

24. Guowang Li. MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>.

Degree: MSin Electrical Engineering, Electrical Engineering, 2010, University of Notre Dame

  III-V nitride semiconductors have exhibited a promising technology platform for optoelectronic and electronic devices. For low Al composition (<40 %) AlGaN/GaN high-electron mobility transistors… (more)

Subjects/Keywords: GaN; MBE; Transistor

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APA (6th Edition):

Li, G. (2010). MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>. (Masters Thesis). University of Notre Dame. Retrieved from https://curate.nd.edu/show/7w62f76443f

Chicago Manual of Style (16th Edition):

Li, Guowang. “MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>.” 2010. Masters Thesis, University of Notre Dame. Accessed October 21, 2019. https://curate.nd.edu/show/7w62f76443f.

MLA Handbook (7th Edition):

Li, Guowang. “MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>.” 2010. Web. 21 Oct 2019.

Vancouver:

Li G. MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>. [Internet] [Masters thesis]. University of Notre Dame; 2010. [cited 2019 Oct 21]. Available from: https://curate.nd.edu/show/7w62f76443f.

Council of Science Editors:

Li G. MBE Growth and Device Characteristics of Aluminum Gallium Nitride with High Aluminum Composition</h1>. [Masters Thesis]. University of Notre Dame; 2010. Available from: https://curate.nd.edu/show/7w62f76443f

25. Mogniotte, Jean-François. Conception d'un circuit intégré en SiC appliqué aux convertisseur de moyenne puissance : Design of an integrated circuit in SiC applied to medium power converter.

Degree: Docteur es, Electronique, électrotechnique et automatique, 2014, INSA Lyon

L’émergence d’interrupteurs de puissance en SiC permet d’envisager des convertisseurs de puissance capables de fonctionner au sein des environnements sévères tels que la haute tension… (more)

Subjects/Keywords: Electrotechnique; Electronique de puissance; Convertisseur de puissance; Interrupteur haute tension; Système intégré de puissance; Transistor metal SemiConductor field effect transistor sur Carbure de Silicium - MESFET SiC; Elévateur de tension boost; Haute température; Isolation électrique; Optocoupleur; Semi-isolant; Driver SOI haute température; Silicium sur isolant - SOI; Electrotechnics; Power Electronics; Power Converter; High Voltage Switch; Power integrated systme; MESFET SiC - Metal SemiConductor Field Effect Transistor on Silicon carbide; Boost; High Temperature Converter; Electric Insulation; OptoElectronic Device; Semi-insulating; High temperature SOI Driver; SOI - Silicon On Insulator; 621.317 072

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APA (6th Edition):

Mogniotte, J. (2014). Conception d'un circuit intégré en SiC appliqué aux convertisseur de moyenne puissance : Design of an integrated circuit in SiC applied to medium power converter. (Doctoral Dissertation). INSA Lyon. Retrieved from http://www.theses.fr/2014ISAL0004

Chicago Manual of Style (16th Edition):

Mogniotte, Jean-François. “Conception d'un circuit intégré en SiC appliqué aux convertisseur de moyenne puissance : Design of an integrated circuit in SiC applied to medium power converter.” 2014. Doctoral Dissertation, INSA Lyon. Accessed October 21, 2019. http://www.theses.fr/2014ISAL0004.

MLA Handbook (7th Edition):

Mogniotte, Jean-François. “Conception d'un circuit intégré en SiC appliqué aux convertisseur de moyenne puissance : Design of an integrated circuit in SiC applied to medium power converter.” 2014. Web. 21 Oct 2019.

Vancouver:

Mogniotte J. Conception d'un circuit intégré en SiC appliqué aux convertisseur de moyenne puissance : Design of an integrated circuit in SiC applied to medium power converter. [Internet] [Doctoral dissertation]. INSA Lyon; 2014. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2014ISAL0004.

Council of Science Editors:

Mogniotte J. Conception d'un circuit intégré en SiC appliqué aux convertisseur de moyenne puissance : Design of an integrated circuit in SiC applied to medium power converter. [Doctoral Dissertation]. INSA Lyon; 2014. Available from: http://www.theses.fr/2014ISAL0004


Kent State University

26. Saternus, Julie A. Multilingual Literacy Practice in One School Community: Reading, Writing, and Being Across Japanese and English.

Degree: PhD, College of Arts and Sciences / Department of English, 2019, Kent State University

 Scholars writing in translingual studies view language boundaries as fluid, consider multilinguals to have options that include shuttling back and forth between languages in order… (more)

Subjects/Keywords: Composition; English As A Second Language; Literacy; Multilingual Education; Multimedia Communications; multilingual, translingual, writing, speaking, speech, code mesh, code switch, social, literacy, language learning, Japanese, English, screen recording, literacy studies, composition, second language acquisition, ecology, remediation

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Saternus, J. A. (2019). Multilingual Literacy Practice in One School Community: Reading, Writing, and Being Across Japanese and English. (Doctoral Dissertation). Kent State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=kent1563811516613295

Chicago Manual of Style (16th Edition):

Saternus, Julie A. “Multilingual Literacy Practice in One School Community: Reading, Writing, and Being Across Japanese and English.” 2019. Doctoral Dissertation, Kent State University. Accessed October 21, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=kent1563811516613295.

MLA Handbook (7th Edition):

Saternus, Julie A. “Multilingual Literacy Practice in One School Community: Reading, Writing, and Being Across Japanese and English.” 2019. Web. 21 Oct 2019.

Vancouver:

Saternus JA. Multilingual Literacy Practice in One School Community: Reading, Writing, and Being Across Japanese and English. [Internet] [Doctoral dissertation]. Kent State University; 2019. [cited 2019 Oct 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=kent1563811516613295.

Council of Science Editors:

Saternus JA. Multilingual Literacy Practice in One School Community: Reading, Writing, and Being Across Japanese and English. [Doctoral Dissertation]. Kent State University; 2019. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=kent1563811516613295


Universidade do Porto

27. Carvalho, Jorge Miguel Teixeira Martins de. Web Switch em Unix.

Degree: 2009, Universidade do Porto

Tese de mestrado integrado. Engenharia Electrotécnica e de Computadores (Major Telecomunicações). Faculdade de Engenharia. Universidade do Porto. 2009 Advisors/Committee Members: Neves, João Manuel Couto das, Universidade do Porto. Faculdade de Engenharia.

Subjects/Keywords: Web switch; Unix - Sistema operativo

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APA (6th Edition):

Carvalho, J. M. T. M. d. (2009). Web Switch em Unix. (Thesis). Universidade do Porto. Retrieved from http://www.rcaap.pt/detail.jsp?id=oai:repositorio-aberto.up.pt:10216/59306

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Carvalho, Jorge Miguel Teixeira Martins de. “Web Switch em Unix.” 2009. Thesis, Universidade do Porto. Accessed October 21, 2019. http://www.rcaap.pt/detail.jsp?id=oai:repositorio-aberto.up.pt:10216/59306.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Carvalho, Jorge Miguel Teixeira Martins de. “Web Switch em Unix.” 2009. Web. 21 Oct 2019.

Vancouver:

Carvalho JMTMd. Web Switch em Unix. [Internet] [Thesis]. Universidade do Porto; 2009. [cited 2019 Oct 21]. Available from: http://www.rcaap.pt/detail.jsp?id=oai:repositorio-aberto.up.pt:10216/59306.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Carvalho JMTMd. Web Switch em Unix. [Thesis]. Universidade do Porto; 2009. Available from: http://www.rcaap.pt/detail.jsp?id=oai:repositorio-aberto.up.pt:10216/59306

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Wright State University

28. Choragudi, Venkata Sai Aditya Kumar. Analysis and Design of Pulse-Width Modulated Two-Switch Forward DC-DC Converter for Universal Laptop Adapter.

Degree: MSEgr, Electrical Engineering, 2011, Wright State University

 The objective of this research is to analyze, design and simulate a two-switch forward pulse-width modulated (PWM) DC-DC converter. The Forward PWM DC-DC converter is… (more)

Subjects/Keywords: Electrical Engineering; two-switch

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APA (6th Edition):

Choragudi, V. S. A. K. (2011). Analysis and Design of Pulse-Width Modulated Two-Switch Forward DC-DC Converter for Universal Laptop Adapter. (Masters Thesis). Wright State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=wright1301945196

Chicago Manual of Style (16th Edition):

Choragudi, Venkata Sai Aditya Kumar. “Analysis and Design of Pulse-Width Modulated Two-Switch Forward DC-DC Converter for Universal Laptop Adapter.” 2011. Masters Thesis, Wright State University. Accessed October 21, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=wright1301945196.

MLA Handbook (7th Edition):

Choragudi, Venkata Sai Aditya Kumar. “Analysis and Design of Pulse-Width Modulated Two-Switch Forward DC-DC Converter for Universal Laptop Adapter.” 2011. Web. 21 Oct 2019.

Vancouver:

Choragudi VSAK. Analysis and Design of Pulse-Width Modulated Two-Switch Forward DC-DC Converter for Universal Laptop Adapter. [Internet] [Masters thesis]. Wright State University; 2011. [cited 2019 Oct 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=wright1301945196.

Council of Science Editors:

Choragudi VSAK. Analysis and Design of Pulse-Width Modulated Two-Switch Forward DC-DC Converter for Universal Laptop Adapter. [Masters Thesis]. Wright State University; 2011. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=wright1301945196


The Ohio State University

29. Goswami, Sudip. Investigation Of The Behavior Of The Gal4 Inhibitor Gal80 Of The GAL Genetic Switch In The Yeast Saccharomyces Cerevisiae.

Degree: PhD, Molecular Genetics, 2014, The Ohio State University

 The DNA-binding transcriptional activator Gal4 and its regulators Gal80 and Gal3 constitute a galactose-responsive switch for the GAL genes of Saccharomyces cerevisiae. Gal4 binds to… (more)

Subjects/Keywords: Cellular Biology; GAL genetic switch

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Goswami, S. (2014). Investigation Of The Behavior Of The Gal4 Inhibitor Gal80 Of The GAL Genetic Switch In The Yeast Saccharomyces Cerevisiae. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1408542557

Chicago Manual of Style (16th Edition):

Goswami, Sudip. “Investigation Of The Behavior Of The Gal4 Inhibitor Gal80 Of The GAL Genetic Switch In The Yeast Saccharomyces Cerevisiae.” 2014. Doctoral Dissertation, The Ohio State University. Accessed October 21, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1408542557.

MLA Handbook (7th Edition):

Goswami, Sudip. “Investigation Of The Behavior Of The Gal4 Inhibitor Gal80 Of The GAL Genetic Switch In The Yeast Saccharomyces Cerevisiae.” 2014. Web. 21 Oct 2019.

Vancouver:

Goswami S. Investigation Of The Behavior Of The Gal4 Inhibitor Gal80 Of The GAL Genetic Switch In The Yeast Saccharomyces Cerevisiae. [Internet] [Doctoral dissertation]. The Ohio State University; 2014. [cited 2019 Oct 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1408542557.

Council of Science Editors:

Goswami S. Investigation Of The Behavior Of The Gal4 Inhibitor Gal80 Of The GAL Genetic Switch In The Yeast Saccharomyces Cerevisiae. [Doctoral Dissertation]. The Ohio State University; 2014. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1408542557


Penn State University

30. Kwan, Henry W. Development of an Improved Silicon-based Photoconductive Switch for Microwave Signal Control.

Degree: MS, Engineering Science, 2008, Penn State University

 A new silicon-based photoconductive switch concept for microwave signal control has been demonstrated. The concept yields three generations of devices, fabricated within coplanar waveguides on… (more)

Subjects/Keywords: silicon photoconductive switch; microwave circuits

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Kwan, H. W. (2008). Development of an Improved Silicon-based Photoconductive Switch for Microwave Signal Control. (Masters Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/8749

Chicago Manual of Style (16th Edition):

Kwan, Henry W. “Development of an Improved Silicon-based Photoconductive Switch for Microwave Signal Control.” 2008. Masters Thesis, Penn State University. Accessed October 21, 2019. https://etda.libraries.psu.edu/catalog/8749.

MLA Handbook (7th Edition):

Kwan, Henry W. “Development of an Improved Silicon-based Photoconductive Switch for Microwave Signal Control.” 2008. Web. 21 Oct 2019.

Vancouver:

Kwan HW. Development of an Improved Silicon-based Photoconductive Switch for Microwave Signal Control. [Internet] [Masters thesis]. Penn State University; 2008. [cited 2019 Oct 21]. Available from: https://etda.libraries.psu.edu/catalog/8749.

Council of Science Editors:

Kwan HW. Development of an Improved Silicon-based Photoconductive Switch for Microwave Signal Control. [Masters Thesis]. Penn State University; 2008. Available from: https://etda.libraries.psu.edu/catalog/8749

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