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You searched for subject:( magnetic tunnel junction). Showing records 1 – 30 of 12783 total matches.

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NSYSU

1. Ho, Yen-Hsun. The Growth of the Magnetic Multilayer and Relative Properties.

Degree: Master, Physics, 2008, NSYSU

 From the discovery of GMR effect since 1988,spintronic has been extensively developed. Research and application of relative GMR, CMR and TMR topics have progressed rapidly.… (more)

Subjects/Keywords: Magnetic multilayer; Magnetic tunnel junction

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APA (6th Edition):

Ho, Y. (2008). The Growth of the Magnetic Multilayer and Relative Properties. (Thesis). NSYSU. Retrieved from http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0822108-151506

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ho, Yen-Hsun. “The Growth of the Magnetic Multilayer and Relative Properties.” 2008. Thesis, NSYSU. Accessed March 20, 2019. http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0822108-151506.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ho, Yen-Hsun. “The Growth of the Magnetic Multilayer and Relative Properties.” 2008. Web. 20 Mar 2019.

Vancouver:

Ho Y. The Growth of the Magnetic Multilayer and Relative Properties. [Internet] [Thesis]. NSYSU; 2008. [cited 2019 Mar 20]. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0822108-151506.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ho Y. The Growth of the Magnetic Multilayer and Relative Properties. [Thesis]. NSYSU; 2008. Available from: http://etd.lib.nsysu.edu.tw/ETD-db/ETD-search/view_etd?URN=etd-0822108-151506

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Oregon State University

2. Ren, Fanghui. Radiation tolerance of magnetic tunnel junctions with MgO barriers.

Degree: MS, Electrical and Computer Engineering, 2012, Oregon State University

 In the next decade, technology trends – smaller dimension, lower voltage, higher operating frequency – introduce new technical considerations and challenges for radiation effects in integrated circuits.… (more)

Subjects/Keywords: Magnetic tunnel junction; Radiation tolerance

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APA (6th Edition):

Ren, F. (2012). Radiation tolerance of magnetic tunnel junctions with MgO barriers. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/31109

Chicago Manual of Style (16th Edition):

Ren, Fanghui. “Radiation tolerance of magnetic tunnel junctions with MgO barriers.” 2012. Masters Thesis, Oregon State University. Accessed March 20, 2019. http://hdl.handle.net/1957/31109.

MLA Handbook (7th Edition):

Ren, Fanghui. “Radiation tolerance of magnetic tunnel junctions with MgO barriers.” 2012. Web. 20 Mar 2019.

Vancouver:

Ren F. Radiation tolerance of magnetic tunnel junctions with MgO barriers. [Internet] [Masters thesis]. Oregon State University; 2012. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/1957/31109.

Council of Science Editors:

Ren F. Radiation tolerance of magnetic tunnel junctions with MgO barriers. [Masters Thesis]. Oregon State University; 2012. Available from: http://hdl.handle.net/1957/31109


Cornell University

3. Li, Wan. Electrochemsitry And Spintronics Of Graphene .

Degree: 2013, Cornell University

 Graphene is the name given to a monolayer of carbon atoms that are tightly packed into a two-dimensional honeycomb lattice. Since experimentally isolated in 2004,… (more)

Subjects/Keywords: Graphene; Electrochemistry; Magnetic tunnel junction

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APA (6th Edition):

Li, W. (2013). Electrochemsitry And Spintronics Of Graphene . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/34375

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Wan. “Electrochemsitry And Spintronics Of Graphene .” 2013. Thesis, Cornell University. Accessed March 20, 2019. http://hdl.handle.net/1813/34375.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Wan. “Electrochemsitry And Spintronics Of Graphene .” 2013. Web. 20 Mar 2019.

Vancouver:

Li W. Electrochemsitry And Spintronics Of Graphene . [Internet] [Thesis]. Cornell University; 2013. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/1813/34375.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li W. Electrochemsitry And Spintronics Of Graphene . [Thesis]. Cornell University; 2013. Available from: http://hdl.handle.net/1813/34375

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

4. Kurij, Georg. Magnetic tunnel junctions for ultrasensitive all-oxide hybrid sensors for medical applications : Jonctions tunnel magnétiques pour capteurs hybrides tout-oxydes ultrasensibles pour des applications médicales.

Degree: Docteur es, Physique, 2016, Paris Saclay

La détection des très faibles valeurs de champ magnétique est un enjeu important pour l’émergence à plus grande échelle de techniques pour le domaine du… (more)

Subjects/Keywords: Capteurs magnétiques; Oxydes fonctionnels; Magnétorésistance tunnel; Jonction tunnel magnétique; Magnetic sensors; Functional oxides; Tunnel magnetoresistance; Magnetic tunnel junction

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APA (6th Edition):

Kurij, G. (2016). Magnetic tunnel junctions for ultrasensitive all-oxide hybrid sensors for medical applications : Jonctions tunnel magnétiques pour capteurs hybrides tout-oxydes ultrasensibles pour des applications médicales. (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2016SACLS051

Chicago Manual of Style (16th Edition):

Kurij, Georg. “Magnetic tunnel junctions for ultrasensitive all-oxide hybrid sensors for medical applications : Jonctions tunnel magnétiques pour capteurs hybrides tout-oxydes ultrasensibles pour des applications médicales.” 2016. Doctoral Dissertation, Paris Saclay. Accessed March 20, 2019. http://www.theses.fr/2016SACLS051.

MLA Handbook (7th Edition):

Kurij, Georg. “Magnetic tunnel junctions for ultrasensitive all-oxide hybrid sensors for medical applications : Jonctions tunnel magnétiques pour capteurs hybrides tout-oxydes ultrasensibles pour des applications médicales.” 2016. Web. 20 Mar 2019.

Vancouver:

Kurij G. Magnetic tunnel junctions for ultrasensitive all-oxide hybrid sensors for medical applications : Jonctions tunnel magnétiques pour capteurs hybrides tout-oxydes ultrasensibles pour des applications médicales. [Internet] [Doctoral dissertation]. Paris Saclay; 2016. [cited 2019 Mar 20]. Available from: http://www.theses.fr/2016SACLS051.

Council of Science Editors:

Kurij G. Magnetic tunnel junctions for ultrasensitive all-oxide hybrid sensors for medical applications : Jonctions tunnel magnétiques pour capteurs hybrides tout-oxydes ultrasensibles pour des applications médicales. [Doctoral Dissertation]. Paris Saclay; 2016. Available from: http://www.theses.fr/2016SACLS051


University of Texas – Austin

5. Williamson, Morgan Cole. Ferromagnetic resonance in magnetic tunnel junctions under high dc biases.

Degree: Physics, 2016, University of Texas – Austin

 Ferromagnetic resonance (FMR) is a standard spectroscopic technique which is used to probe the magnetodynamics of ferromagnetic materials in order to understand and improve performance… (more)

Subjects/Keywords: Ferromagnetic resonance; Magnetic tunnel junction; Voltage controlled magnetic anisotropy; Spintronics

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APA (6th Edition):

Williamson, M. C. (2016). Ferromagnetic resonance in magnetic tunnel junctions under high dc biases. (Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/46202

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Williamson, Morgan Cole. “Ferromagnetic resonance in magnetic tunnel junctions under high dc biases.” 2016. Thesis, University of Texas – Austin. Accessed March 20, 2019. http://hdl.handle.net/2152/46202.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Williamson, Morgan Cole. “Ferromagnetic resonance in magnetic tunnel junctions under high dc biases.” 2016. Web. 20 Mar 2019.

Vancouver:

Williamson MC. Ferromagnetic resonance in magnetic tunnel junctions under high dc biases. [Internet] [Thesis]. University of Texas – Austin; 2016. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/2152/46202.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Williamson MC. Ferromagnetic resonance in magnetic tunnel junctions under high dc biases. [Thesis]. University of Texas – Austin; 2016. Available from: http://hdl.handle.net/2152/46202

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Arizona

6. Almasi, Hamid. Perpendicular Magnetic Tunnel Junctions with MgO Tunnel Barrier .

Degree: 2017, University of Arizona

 Spintronics discusses about fundamental physics and material science in mostly nanometer size structures. Spintronics also delivers many promising technologies for now and the future. One… (more)

Subjects/Keywords: buffer and capping; Magnetic tunnel junction; perpendicular magnetic anisotropy; tunneling magnetoresistance

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APA (6th Edition):

Almasi, H. (2017). Perpendicular Magnetic Tunnel Junctions with MgO Tunnel Barrier . (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/626332

Chicago Manual of Style (16th Edition):

Almasi, Hamid. “Perpendicular Magnetic Tunnel Junctions with MgO Tunnel Barrier .” 2017. Doctoral Dissertation, University of Arizona. Accessed March 20, 2019. http://hdl.handle.net/10150/626332.

MLA Handbook (7th Edition):

Almasi, Hamid. “Perpendicular Magnetic Tunnel Junctions with MgO Tunnel Barrier .” 2017. Web. 20 Mar 2019.

Vancouver:

Almasi H. Perpendicular Magnetic Tunnel Junctions with MgO Tunnel Barrier . [Internet] [Doctoral dissertation]. University of Arizona; 2017. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/10150/626332.

Council of Science Editors:

Almasi H. Perpendicular Magnetic Tunnel Junctions with MgO Tunnel Barrier . [Doctoral Dissertation]. University of Arizona; 2017. Available from: http://hdl.handle.net/10150/626332


University of Notre Dame

7. Shiliang Liu. Design and Modeling for Nanomagnet Logic Circuits and Architectures</h1>.

Degree: PhD, Computer Science and Engineering, 2013, University of Notre Dame

  As a possible replacement or supplementary technology for Complimentary Metal- Oxide-Semiconductor (CMOS) technology, Nanomagnet Logic (NML) employs near- est neighbor dipole-dipole interactions for logic… (more)

Subjects/Keywords: Simulation; Magnetic-Electrical Interface; Nanomagnet Logic; Modeling; Magnetic Tunnel Junction; Design

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APA (6th Edition):

Liu, S. (2013). Design and Modeling for Nanomagnet Logic Circuits and Architectures</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/tb09j388g40

Chicago Manual of Style (16th Edition):

Liu, Shiliang. “Design and Modeling for Nanomagnet Logic Circuits and Architectures</h1>.” 2013. Doctoral Dissertation, University of Notre Dame. Accessed March 20, 2019. https://curate.nd.edu/show/tb09j388g40.

MLA Handbook (7th Edition):

Liu, Shiliang. “Design and Modeling for Nanomagnet Logic Circuits and Architectures</h1>.” 2013. Web. 20 Mar 2019.

Vancouver:

Liu S. Design and Modeling for Nanomagnet Logic Circuits and Architectures</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2013. [cited 2019 Mar 20]. Available from: https://curate.nd.edu/show/tb09j388g40.

Council of Science Editors:

Liu S. Design and Modeling for Nanomagnet Logic Circuits and Architectures</h1>. [Doctoral Dissertation]. University of Notre Dame; 2013. Available from: https://curate.nd.edu/show/tb09j388g40


University of Kansas

8. Wilt, Jamie Samantha. Atomically-thin Al2O3 dielectric films for metal-insulator-metal tunnel junctions.

Degree: PhD, Physics & Astronomy, 2017, University of Kansas

 Metal-Insulator-Metal tunnel junctions (MIMTJ) are a core building block for a variety of microelectronics including Magnetic Tunnel Junctions (MTJs) for magnetic memory and Josephson Junctions… (more)

Subjects/Keywords: Physics; Materials Science; Atomic Layer Deposition; Interfacial Layer Growth; Josephson Junction; Magnetic Tunnel Junction; Tunnel Junction; Ultrathin

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APA (6th Edition):

Wilt, J. S. (2017). Atomically-thin Al2O3 dielectric films for metal-insulator-metal tunnel junctions. (Doctoral Dissertation). University of Kansas. Retrieved from http://hdl.handle.net/1808/27345

Chicago Manual of Style (16th Edition):

Wilt, Jamie Samantha. “Atomically-thin Al2O3 dielectric films for metal-insulator-metal tunnel junctions.” 2017. Doctoral Dissertation, University of Kansas. Accessed March 20, 2019. http://hdl.handle.net/1808/27345.

MLA Handbook (7th Edition):

Wilt, Jamie Samantha. “Atomically-thin Al2O3 dielectric films for metal-insulator-metal tunnel junctions.” 2017. Web. 20 Mar 2019.

Vancouver:

Wilt JS. Atomically-thin Al2O3 dielectric films for metal-insulator-metal tunnel junctions. [Internet] [Doctoral dissertation]. University of Kansas; 2017. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/1808/27345.

Council of Science Editors:

Wilt JS. Atomically-thin Al2O3 dielectric films for metal-insulator-metal tunnel junctions. [Doctoral Dissertation]. University of Kansas; 2017. Available from: http://hdl.handle.net/1808/27345


University of California – Irvine

9. Dill, Joshua. Characterization of Magnetic Tunnel Junctions For Spin Transfer Torque Magnetic Random Access Memory.

Degree: Chemical and Material Physics, 2014, University of California – Irvine

 This thesis details two experimental methods for quantifying magnetic tunnel junction behavior, namely write error rates and field modulated spin-torque ferromagnetic resonance. The former examines… (more)

Subjects/Keywords: Physics; Magnetic Tunnel Junction; Spin Transfer Torque; STT-MRAM

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APA (6th Edition):

Dill, J. (2014). Characterization of Magnetic Tunnel Junctions For Spin Transfer Torque Magnetic Random Access Memory. (Thesis). University of California – Irvine. Retrieved from http://www.escholarship.org/uc/item/4c03d1rm

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dill, Joshua. “Characterization of Magnetic Tunnel Junctions For Spin Transfer Torque Magnetic Random Access Memory.” 2014. Thesis, University of California – Irvine. Accessed March 20, 2019. http://www.escholarship.org/uc/item/4c03d1rm.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dill, Joshua. “Characterization of Magnetic Tunnel Junctions For Spin Transfer Torque Magnetic Random Access Memory.” 2014. Web. 20 Mar 2019.

Vancouver:

Dill J. Characterization of Magnetic Tunnel Junctions For Spin Transfer Torque Magnetic Random Access Memory. [Internet] [Thesis]. University of California – Irvine; 2014. [cited 2019 Mar 20]. Available from: http://www.escholarship.org/uc/item/4c03d1rm.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dill J. Characterization of Magnetic Tunnel Junctions For Spin Transfer Torque Magnetic Random Access Memory. [Thesis]. University of California – Irvine; 2014. Available from: http://www.escholarship.org/uc/item/4c03d1rm

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Cornell University

10. Xue, Lin. Quantitative Measurements Of Spin-Transfer-Torque-Induced Dynamics In Nanomagnets .

Degree: 2013, Cornell University

 Spin transfer torque is a torque exerted on a magnet by transferring spin angular momentum from a current to the magnet. It enables efficient manipulation… (more)

Subjects/Keywords: spin transfer torque; magnetic tunnel junction; spin valve

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APA (6th Edition):

Xue, L. (2013). Quantitative Measurements Of Spin-Transfer-Torque-Induced Dynamics In Nanomagnets . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/34306

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Xue, Lin. “Quantitative Measurements Of Spin-Transfer-Torque-Induced Dynamics In Nanomagnets .” 2013. Thesis, Cornell University. Accessed March 20, 2019. http://hdl.handle.net/1813/34306.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Xue, Lin. “Quantitative Measurements Of Spin-Transfer-Torque-Induced Dynamics In Nanomagnets .” 2013. Web. 20 Mar 2019.

Vancouver:

Xue L. Quantitative Measurements Of Spin-Transfer-Torque-Induced Dynamics In Nanomagnets . [Internet] [Thesis]. Cornell University; 2013. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/1813/34306.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Xue L. Quantitative Measurements Of Spin-Transfer-Torque-Induced Dynamics In Nanomagnets . [Thesis]. Cornell University; 2013. Available from: http://hdl.handle.net/1813/34306

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Minnesota

11. Zhang, Yisong. Spin transfer torque induced oscillation and switching in magnetic tunnel junction.

Degree: PhD, Electrical Engineering, 2014, University of Minnesota

 Spin transfer torque (STT) induced magnetization switching and oscillation in nanometer scale magnetoresistance (MR) devices have been studied intensively due to its direct application in… (more)

Subjects/Keywords: Magnetic tunnel junction; Spin torque oscillation; Spin transfer torque

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APA (6th Edition):

Zhang, Y. (2014). Spin transfer torque induced oscillation and switching in magnetic tunnel junction. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/163938

Chicago Manual of Style (16th Edition):

Zhang, Yisong. “Spin transfer torque induced oscillation and switching in magnetic tunnel junction.” 2014. Doctoral Dissertation, University of Minnesota. Accessed March 20, 2019. http://hdl.handle.net/11299/163938.

MLA Handbook (7th Edition):

Zhang, Yisong. “Spin transfer torque induced oscillation and switching in magnetic tunnel junction.” 2014. Web. 20 Mar 2019.

Vancouver:

Zhang Y. Spin transfer torque induced oscillation and switching in magnetic tunnel junction. [Internet] [Doctoral dissertation]. University of Minnesota; 2014. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/11299/163938.

Council of Science Editors:

Zhang Y. Spin transfer torque induced oscillation and switching in magnetic tunnel junction. [Doctoral Dissertation]. University of Minnesota; 2014. Available from: http://hdl.handle.net/11299/163938


UCLA

12. Cai, Xueqing. Characterization and Write Error Rates of Magnetic Tunnel Junctions.

Degree: Electrical Engineering, 2014, UCLA

 There are many parameters necessary for magnetic tunnel junctions (MTJs) to be commercially competitive with established CMOS memory technologies, and one is the reliability of… (more)

Subjects/Keywords: Electrical engineering; magnetic tunnel junction; perpendicular magnetic anisotropy; precessional switching; TMR; VCMA; write error rates

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APA (6th Edition):

Cai, X. (2014). Characterization and Write Error Rates of Magnetic Tunnel Junctions. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/2sk9355p

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Cai, Xueqing. “Characterization and Write Error Rates of Magnetic Tunnel Junctions.” 2014. Thesis, UCLA. Accessed March 20, 2019. http://www.escholarship.org/uc/item/2sk9355p.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Cai, Xueqing. “Characterization and Write Error Rates of Magnetic Tunnel Junctions.” 2014. Web. 20 Mar 2019.

Vancouver:

Cai X. Characterization and Write Error Rates of Magnetic Tunnel Junctions. [Internet] [Thesis]. UCLA; 2014. [cited 2019 Mar 20]. Available from: http://www.escholarship.org/uc/item/2sk9355p.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cai X. Characterization and Write Error Rates of Magnetic Tunnel Junctions. [Thesis]. UCLA; 2014. Available from: http://www.escholarship.org/uc/item/2sk9355p

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

13. Lequeux, Steven. Déplacement de paroi de domaine par transfert de spin dans des jonctions tunnel magnétiques : application au memristor spintronique : Domain wall displacement by spin transfer in magnetic tunnel junctions : application to the spintronic memristor.

Degree: Docteur es, Physique de la matière condensée, 2016, Paris Saclay

Dans le contexte actuel des technologies de l’information, le traitement séquentiel effectué par les ordinateurs d’architecture classique bute sur des problématiques de consommation d’énergie. En… (more)

Subjects/Keywords: Memristor; Paroi de domaine; Transfert de spin; Jonction tunnel magnétique; Synapse; Memristor; Magnetic domain wall; Spin transfer; Magnetic tunnel junction; Synapse

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lequeux, S. (2016). Déplacement de paroi de domaine par transfert de spin dans des jonctions tunnel magnétiques : application au memristor spintronique : Domain wall displacement by spin transfer in magnetic tunnel junctions : application to the spintronic memristor. (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2016SACLS168

Chicago Manual of Style (16th Edition):

Lequeux, Steven. “Déplacement de paroi de domaine par transfert de spin dans des jonctions tunnel magnétiques : application au memristor spintronique : Domain wall displacement by spin transfer in magnetic tunnel junctions : application to the spintronic memristor.” 2016. Doctoral Dissertation, Paris Saclay. Accessed March 20, 2019. http://www.theses.fr/2016SACLS168.

MLA Handbook (7th Edition):

Lequeux, Steven. “Déplacement de paroi de domaine par transfert de spin dans des jonctions tunnel magnétiques : application au memristor spintronique : Domain wall displacement by spin transfer in magnetic tunnel junctions : application to the spintronic memristor.” 2016. Web. 20 Mar 2019.

Vancouver:

Lequeux S. Déplacement de paroi de domaine par transfert de spin dans des jonctions tunnel magnétiques : application au memristor spintronique : Domain wall displacement by spin transfer in magnetic tunnel junctions : application to the spintronic memristor. [Internet] [Doctoral dissertation]. Paris Saclay; 2016. [cited 2019 Mar 20]. Available from: http://www.theses.fr/2016SACLS168.

Council of Science Editors:

Lequeux S. Déplacement de paroi de domaine par transfert de spin dans des jonctions tunnel magnétiques : application au memristor spintronique : Domain wall displacement by spin transfer in magnetic tunnel junctions : application to the spintronic memristor. [Doctoral Dissertation]. Paris Saclay; 2016. Available from: http://www.theses.fr/2016SACLS168


Victoria University of Wellington

14. Warring, Andrew Harry. Device Applications of Rare-Earth Nitrides.

Degree: 2016, Victoria University of Wellington

 In this thesis the properties of thin film spintronic devices are investigated. These devices incorporate rare-earth nitrides as the active elements in a geometry with… (more)

Subjects/Keywords: Spintronics; Rare earth nitride; Gadolinium nitride; Magnetic tunnel junction; Samarium nitride; Spin orbitronics; Tunnel magnetoresistance; Magnetic semiconductor

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APA (6th Edition):

Warring, A. H. (2016). Device Applications of Rare-Earth Nitrides. (Doctoral Dissertation). Victoria University of Wellington. Retrieved from http://hdl.handle.net/10063/5452

Chicago Manual of Style (16th Edition):

Warring, Andrew Harry. “Device Applications of Rare-Earth Nitrides.” 2016. Doctoral Dissertation, Victoria University of Wellington. Accessed March 20, 2019. http://hdl.handle.net/10063/5452.

MLA Handbook (7th Edition):

Warring, Andrew Harry. “Device Applications of Rare-Earth Nitrides.” 2016. Web. 20 Mar 2019.

Vancouver:

Warring AH. Device Applications of Rare-Earth Nitrides. [Internet] [Doctoral dissertation]. Victoria University of Wellington; 2016. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/10063/5452.

Council of Science Editors:

Warring AH. Device Applications of Rare-Earth Nitrides. [Doctoral Dissertation]. Victoria University of Wellington; 2016. Available from: http://hdl.handle.net/10063/5452


UCLA

15. Li, Xiang. Voltage-Controlled Magnetic Anisotropy in Heavy Metal|Ferromagnet|Insulator-Based Structures.

Degree: Electrical Engineering, 2015, UCLA

 Electric-field assisted writing of magnetic memory that exploits the voltage-controlled magnetic anisotropy (VCMA) effect offers a great potential for high density and low power applications.… (more)

Subjects/Keywords: Electrical engineering; Materials Science; Physics; Magnetic memory; Magnetic tunnel junction; Perpendicular magnetic anisotropy; Thermal annealing stability; Voltage-controlled magnetic anisotropy

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APA (6th Edition):

Li, X. (2015). Voltage-Controlled Magnetic Anisotropy in Heavy Metal|Ferromagnet|Insulator-Based Structures. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/9916158x

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Xiang. “Voltage-Controlled Magnetic Anisotropy in Heavy Metal|Ferromagnet|Insulator-Based Structures.” 2015. Thesis, UCLA. Accessed March 20, 2019. http://www.escholarship.org/uc/item/9916158x.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Xiang. “Voltage-Controlled Magnetic Anisotropy in Heavy Metal|Ferromagnet|Insulator-Based Structures.” 2015. Web. 20 Mar 2019.

Vancouver:

Li X. Voltage-Controlled Magnetic Anisotropy in Heavy Metal|Ferromagnet|Insulator-Based Structures. [Internet] [Thesis]. UCLA; 2015. [cited 2019 Mar 20]. Available from: http://www.escholarship.org/uc/item/9916158x.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li X. Voltage-Controlled Magnetic Anisotropy in Heavy Metal|Ferromagnet|Insulator-Based Structures. [Thesis]. UCLA; 2015. Available from: http://www.escholarship.org/uc/item/9916158x

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

16. Malathi M. Compact model for a magnetic tunnel junction.

Degree: Electronics and Communication, 2009, SRM University

Included

References p. 123-131

Advisors/Committee Members: Muthamizhchelvan, C, Prabhakar, Anil.

Subjects/Keywords: Electronics and Communication; Magnetic tunnel junction

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

M, M. (2009). Compact model for a magnetic tunnel junction. (Thesis). SRM University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/6516

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

M, Malathi. “Compact model for a magnetic tunnel junction.” 2009. Thesis, SRM University. Accessed March 20, 2019. http://shodhganga.inflibnet.ac.in/handle/10603/6516.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

M, Malathi. “Compact model for a magnetic tunnel junction.” 2009. Web. 20 Mar 2019.

Vancouver:

M M. Compact model for a magnetic tunnel junction. [Internet] [Thesis]. SRM University; 2009. [cited 2019 Mar 20]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/6516.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

M M. Compact model for a magnetic tunnel junction. [Thesis]. SRM University; 2009. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/6516

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


UCLA

17. Li, Xu. Nanomagnet Applications in Multiferroic Heterostructures.

Degree: Mechanical Engineering, 2017, UCLA

 Over the past decade there have been considerable research efforts directed at controlling spin dynamics in nanomagnets. Spin dynamics generally covers two regimes, one is… (more)

Subjects/Keywords: Mechanical engineering; Electrical engineering; magnetic tunnel junction; magnetoelectrics; multiband filter; multiferroics; spintronics; spin wave

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APA (6th Edition):

Li, X. (2017). Nanomagnet Applications in Multiferroic Heterostructures. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/54t9p9f5

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Xu. “Nanomagnet Applications in Multiferroic Heterostructures.” 2017. Thesis, UCLA. Accessed March 20, 2019. http://www.escholarship.org/uc/item/54t9p9f5.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Xu. “Nanomagnet Applications in Multiferroic Heterostructures.” 2017. Web. 20 Mar 2019.

Vancouver:

Li X. Nanomagnet Applications in Multiferroic Heterostructures. [Internet] [Thesis]. UCLA; 2017. [cited 2019 Mar 20]. Available from: http://www.escholarship.org/uc/item/54t9p9f5.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li X. Nanomagnet Applications in Multiferroic Heterostructures. [Thesis]. UCLA; 2017. Available from: http://www.escholarship.org/uc/item/54t9p9f5

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

18. Kani, Nickvash. Modeling of magnetization dynamics and applications to spin-based logic and memory devices.

Degree: PhD, Electrical and Computer Engineering, 2017, Georgia Tech

 The objective of this research is to develop models to better evaluate the performance and reliability of proposed spin-based boolean devices. This research will focus… (more)

Subjects/Keywords: Nanomagnet; Dipolar coupling; Spin-transfer torque; Magnetic tunnel junction; Spin-switch; Spintronics; Straintronics; Magnetization dynamics

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APA (6th Edition):

Kani, N. (2017). Modeling of magnetization dynamics and applications to spin-based logic and memory devices. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/59242

Chicago Manual of Style (16th Edition):

Kani, Nickvash. “Modeling of magnetization dynamics and applications to spin-based logic and memory devices.” 2017. Doctoral Dissertation, Georgia Tech. Accessed March 20, 2019. http://hdl.handle.net/1853/59242.

MLA Handbook (7th Edition):

Kani, Nickvash. “Modeling of magnetization dynamics and applications to spin-based logic and memory devices.” 2017. Web. 20 Mar 2019.

Vancouver:

Kani N. Modeling of magnetization dynamics and applications to spin-based logic and memory devices. [Internet] [Doctoral dissertation]. Georgia Tech; 2017. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/1853/59242.

Council of Science Editors:

Kani N. Modeling of magnetization dynamics and applications to spin-based logic and memory devices. [Doctoral Dissertation]. Georgia Tech; 2017. Available from: http://hdl.handle.net/1853/59242


University of Manitoba

19. Zhang, Zhaohui. Spin-dependent electrical and thermal transport in magnetic tunnel junctions.

Degree: Physics and Astronomy, 2012, University of Manitoba

 Thermoelectricity can directly convert a temperature difference into a voltage or charge current. Recently, the development of spin caloritronics has introduced spin as another degree… (more)

Subjects/Keywords: spin-dependent; thermoelectricity; spintronics; magnetoresistance; spin-transfer torque; thermal spin-transfer torque; magnetic tunnel junction

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APA (6th Edition):

Zhang, Z. (2012). Spin-dependent electrical and thermal transport in magnetic tunnel junctions. (Thesis). University of Manitoba. Retrieved from http://hdl.handle.net/1993/31947

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhang, Zhaohui. “Spin-dependent electrical and thermal transport in magnetic tunnel junctions.” 2012. Thesis, University of Manitoba. Accessed March 20, 2019. http://hdl.handle.net/1993/31947.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhang, Zhaohui. “Spin-dependent electrical and thermal transport in magnetic tunnel junctions.” 2012. Web. 20 Mar 2019.

Vancouver:

Zhang Z. Spin-dependent electrical and thermal transport in magnetic tunnel junctions. [Internet] [Thesis]. University of Manitoba; 2012. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/1993/31947.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang Z. Spin-dependent electrical and thermal transport in magnetic tunnel junctions. [Thesis]. University of Manitoba; 2012. Available from: http://hdl.handle.net/1993/31947

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Minnesota

20. Yao, Xiaofeng. Magnetic tunnel junction based spintronic logic and memory devices.

Degree: PhD, Electrical engineering, 2011, University of Minnesota

 The development of semiconductor devices is limited by the high power consumption and further physical dimension reduction. Spintronic devices, especially the magnetic tunnel junction (MTJ)… (more)

Subjects/Keywords: Magnetic Tunnel Junction; Spin Transfer Torque; Spintronic Device; Spintronic Logic; Electrical Engineering

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yao, X. (2011). Magnetic tunnel junction based spintronic logic and memory devices. (Doctoral Dissertation). University of Minnesota. Retrieved from http://purl.umn.edu/119363

Chicago Manual of Style (16th Edition):

Yao, Xiaofeng. “Magnetic tunnel junction based spintronic logic and memory devices.” 2011. Doctoral Dissertation, University of Minnesota. Accessed March 20, 2019. http://purl.umn.edu/119363.

MLA Handbook (7th Edition):

Yao, Xiaofeng. “Magnetic tunnel junction based spintronic logic and memory devices.” 2011. Web. 20 Mar 2019.

Vancouver:

Yao X. Magnetic tunnel junction based spintronic logic and memory devices. [Internet] [Doctoral dissertation]. University of Minnesota; 2011. [cited 2019 Mar 20]. Available from: http://purl.umn.edu/119363.

Council of Science Editors:

Yao X. Magnetic tunnel junction based spintronic logic and memory devices. [Doctoral Dissertation]. University of Minnesota; 2011. Available from: http://purl.umn.edu/119363


University of Minnesota

21. Choi, Won Ho. CMOS Reliability Characterization Techniques and Spintronics-Based Mixed-Signal Circuits.

Degree: PhD, Health Services Research, Policy and Administration, 2015, University of Minnesota

 Plasma-Induced Damage (PID) has been an important reliability concern for equipment vendors and fabs in both traditional SiO2 based and advanced high-k dielectric based processes.… (more)

Subjects/Keywords: Magnetic tunnel junction; Mixed-signal circuits; Reliability; SAR ADC; Spintronics; True random number generator

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APA (6th Edition):

Choi, W. H. (2015). CMOS Reliability Characterization Techniques and Spintronics-Based Mixed-Signal Circuits. (Doctoral Dissertation). University of Minnesota. Retrieved from http://hdl.handle.net/11299/175546

Chicago Manual of Style (16th Edition):

Choi, Won Ho. “CMOS Reliability Characterization Techniques and Spintronics-Based Mixed-Signal Circuits.” 2015. Doctoral Dissertation, University of Minnesota. Accessed March 20, 2019. http://hdl.handle.net/11299/175546.

MLA Handbook (7th Edition):

Choi, Won Ho. “CMOS Reliability Characterization Techniques and Spintronics-Based Mixed-Signal Circuits.” 2015. Web. 20 Mar 2019.

Vancouver:

Choi WH. CMOS Reliability Characterization Techniques and Spintronics-Based Mixed-Signal Circuits. [Internet] [Doctoral dissertation]. University of Minnesota; 2015. [cited 2019 Mar 20]. Available from: http://hdl.handle.net/11299/175546.

Council of Science Editors:

Choi WH. CMOS Reliability Characterization Techniques and Spintronics-Based Mixed-Signal Circuits. [Doctoral Dissertation]. University of Minnesota; 2015. Available from: http://hdl.handle.net/11299/175546


Université de Grenoble

22. Lacoste, Bertrand. Mastering the influence of thermal fluctuations on the magnetization switching dynamics of spintronic devices : Maitrise de l'influence des fluctuations thermiques sur la dynamique de commutation des dispositifs spintroniques.

Degree: Docteur es, Physique, 2013, Université de Grenoble

Les mémoires magnétiques à couple de transfert de spin (STTRAM) sont des mémoires vives non-volatiles et endurantes très prometteuses pour remplacer les mémoires à base… (more)

Subjects/Keywords: Spintronique; Jonction tunnel magnétique; Précession hors du plan; ,Polariseur perpendiculaire; Spintronics; Magnetic tunnel junction; Out-of-plane precession; Perpendicular polarizer; 530

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APA (6th Edition):

Lacoste, B. (2013). Mastering the influence of thermal fluctuations on the magnetization switching dynamics of spintronic devices : Maitrise de l'influence des fluctuations thermiques sur la dynamique de commutation des dispositifs spintroniques. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2013GRENY039

Chicago Manual of Style (16th Edition):

Lacoste, Bertrand. “Mastering the influence of thermal fluctuations on the magnetization switching dynamics of spintronic devices : Maitrise de l'influence des fluctuations thermiques sur la dynamique de commutation des dispositifs spintroniques.” 2013. Doctoral Dissertation, Université de Grenoble. Accessed March 20, 2019. http://www.theses.fr/2013GRENY039.

MLA Handbook (7th Edition):

Lacoste, Bertrand. “Mastering the influence of thermal fluctuations on the magnetization switching dynamics of spintronic devices : Maitrise de l'influence des fluctuations thermiques sur la dynamique de commutation des dispositifs spintroniques.” 2013. Web. 20 Mar 2019.

Vancouver:

Lacoste B. Mastering the influence of thermal fluctuations on the magnetization switching dynamics of spintronic devices : Maitrise de l'influence des fluctuations thermiques sur la dynamique de commutation des dispositifs spintroniques. [Internet] [Doctoral dissertation]. Université de Grenoble; 2013. [cited 2019 Mar 20]. Available from: http://www.theses.fr/2013GRENY039.

Council of Science Editors:

Lacoste B. Mastering the influence of thermal fluctuations on the magnetization switching dynamics of spintronic devices : Maitrise de l'influence des fluctuations thermiques sur la dynamique de commutation des dispositifs spintroniques. [Doctoral Dissertation]. Université de Grenoble; 2013. Available from: http://www.theses.fr/2013GRENY039


Université de Lorraine

23. Xu, Yong. Étude des effets de la lumière sur les propriétés électriques d’une jonction tunnel magnétique : Study of light effect on the electrical properties of a magnetic tunnel junction.

Degree: Docteur es, Physique, 2014, Université de Lorraine

Cette thèse porte sur l’étude des effets de la lumière sur une jonction tunnel magnétique (JTM). Une JTM est constituée d’une couche isolante d’épaisseur nanométrique… (more)

Subjects/Keywords: Jonction tunnel magnétique; Magnétorésistance; Effet photovoltaïque; Effet thermoélectrique; Magnetic Tunnel Junction; Magnetoresistance; Photovoltaic effect; Thermo-Electric effect; 530.416

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APA (6th Edition):

Xu, Y. (2014). Étude des effets de la lumière sur les propriétés électriques d’une jonction tunnel magnétique : Study of light effect on the electrical properties of a magnetic tunnel junction. (Doctoral Dissertation). Université de Lorraine. Retrieved from http://www.theses.fr/2014LORR0256

Chicago Manual of Style (16th Edition):

Xu, Yong. “Étude des effets de la lumière sur les propriétés électriques d’une jonction tunnel magnétique : Study of light effect on the electrical properties of a magnetic tunnel junction.” 2014. Doctoral Dissertation, Université de Lorraine. Accessed March 20, 2019. http://www.theses.fr/2014LORR0256.

MLA Handbook (7th Edition):

Xu, Yong. “Étude des effets de la lumière sur les propriétés électriques d’une jonction tunnel magnétique : Study of light effect on the electrical properties of a magnetic tunnel junction.” 2014. Web. 20 Mar 2019.

Vancouver:

Xu Y. Étude des effets de la lumière sur les propriétés électriques d’une jonction tunnel magnétique : Study of light effect on the electrical properties of a magnetic tunnel junction. [Internet] [Doctoral dissertation]. Université de Lorraine; 2014. [cited 2019 Mar 20]. Available from: http://www.theses.fr/2014LORR0256.

Council of Science Editors:

Xu Y. Étude des effets de la lumière sur les propriétés électriques d’une jonction tunnel magnétique : Study of light effect on the electrical properties of a magnetic tunnel junction. [Doctoral Dissertation]. Université de Lorraine; 2014. Available from: http://www.theses.fr/2014LORR0256

24. Taudul, Beata. Impact of symmetry of oxygen vacancies on electronic transport in MgO-based magnetic tunnel junctions : Effet de la symétrie des lacunes d'oxigène dans MgO sur le transport électronique polarisé en spin.

Degree: Docteur es, Physique, 2017, Université de Strasbourg

En spintronique, l’étude des hétérostructures multicouches composées d'une électrode ferromagnétique et d'une couche isolante mince, c'est-à-dire des jonctions tunnel magnétiques (JTM), est particulièrement importante. Le… (more)

Subjects/Keywords: Spintronique; Jonction tunnel magnétique; Magnétorésistance tunnel; Lacunes d'oxygène; Transport balistique; Théorie fonctionnelle de la densité; Spintronics; Magnetic tunnel junction; Tunnel magnetoresistance,; Oxygen vacancies; Density functionl theory; Ballistic transport; 537.62

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APA (6th Edition):

Taudul, B. (2017). Impact of symmetry of oxygen vacancies on electronic transport in MgO-based magnetic tunnel junctions : Effet de la symétrie des lacunes d'oxigène dans MgO sur le transport électronique polarisé en spin. (Doctoral Dissertation). Université de Strasbourg. Retrieved from http://www.theses.fr/2017STRAE042

Chicago Manual of Style (16th Edition):

Taudul, Beata. “Impact of symmetry of oxygen vacancies on electronic transport in MgO-based magnetic tunnel junctions : Effet de la symétrie des lacunes d'oxigène dans MgO sur le transport électronique polarisé en spin.” 2017. Doctoral Dissertation, Université de Strasbourg. Accessed March 20, 2019. http://www.theses.fr/2017STRAE042.

MLA Handbook (7th Edition):

Taudul, Beata. “Impact of symmetry of oxygen vacancies on electronic transport in MgO-based magnetic tunnel junctions : Effet de la symétrie des lacunes d'oxigène dans MgO sur le transport électronique polarisé en spin.” 2017. Web. 20 Mar 2019.

Vancouver:

Taudul B. Impact of symmetry of oxygen vacancies on electronic transport in MgO-based magnetic tunnel junctions : Effet de la symétrie des lacunes d'oxigène dans MgO sur le transport électronique polarisé en spin. [Internet] [Doctoral dissertation]. Université de Strasbourg; 2017. [cited 2019 Mar 20]. Available from: http://www.theses.fr/2017STRAE042.

Council of Science Editors:

Taudul B. Impact of symmetry of oxygen vacancies on electronic transport in MgO-based magnetic tunnel junctions : Effet de la symétrie des lacunes d'oxigène dans MgO sur le transport électronique polarisé en spin. [Doctoral Dissertation]. Université de Strasbourg; 2017. Available from: http://www.theses.fr/2017STRAE042


UCLA

25. Lee, Hochul. Integration of Voltage-Controlled Spintronic Devices in CMOS Circuits.

Degree: Electrical Engineering, 2017, UCLA

 Spintronics is an emerging field that studies the properties of electron spin and discovers the methods to detect and manipulate its associated magnetic moment in… (more)

Subjects/Keywords: Electrical engineering; magnetic tunnel junction; MRAM; spin-orbit torque; spin-transfer torque; spintronics; voltage-controlled magnetic anisotropy

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APA (6th Edition):

Lee, H. (2017). Integration of Voltage-Controlled Spintronic Devices in CMOS Circuits. (Thesis). UCLA. Retrieved from http://www.escholarship.org/uc/item/0cx596qk

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Hochul. “Integration of Voltage-Controlled Spintronic Devices in CMOS Circuits.” 2017. Thesis, UCLA. Accessed March 20, 2019. http://www.escholarship.org/uc/item/0cx596qk.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Hochul. “Integration of Voltage-Controlled Spintronic Devices in CMOS Circuits.” 2017. Web. 20 Mar 2019.

Vancouver:

Lee H. Integration of Voltage-Controlled Spintronic Devices in CMOS Circuits. [Internet] [Thesis]. UCLA; 2017. [cited 2019 Mar 20]. Available from: http://www.escholarship.org/uc/item/0cx596qk.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee H. Integration of Voltage-Controlled Spintronic Devices in CMOS Circuits. [Thesis]. UCLA; 2017. Available from: http://www.escholarship.org/uc/item/0cx596qk

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Université de Grenoble

26. Yang, Hongxin. First-principles study of spintronic phenomena in magnetic tunnel junctions and graphene : Etude ab-initio des phénomènes spintronique dans les jonctions tunnel magnétiques et le graphène.

Degree: Docteur es, Physique, 2012, Université de Grenoble

Phénomènes de spintronique dans les jonctions tunnel magnétiques et des films minces sont très prometteurs des deux points fondamentaux et l'application de vue. Elles sont… (more)

Subjects/Keywords: Spintronique; Jonction tunnel magnétique; Graphène; Intercalaire couplage d'échange; Anisotropie magnétique; Polarisation de spin; Spintronics; Magnetic tunnel junction; Graphene; Interlayer exchange coupling; Magnetic anisotropy; Spin polarization; 530

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APA (6th Edition):

Yang, H. (2012). First-principles study of spintronic phenomena in magnetic tunnel junctions and graphene : Etude ab-initio des phénomènes spintronique dans les jonctions tunnel magnétiques et le graphène. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2012GRENY054

Chicago Manual of Style (16th Edition):

Yang, Hongxin. “First-principles study of spintronic phenomena in magnetic tunnel junctions and graphene : Etude ab-initio des phénomènes spintronique dans les jonctions tunnel magnétiques et le graphène.” 2012. Doctoral Dissertation, Université de Grenoble. Accessed March 20, 2019. http://www.theses.fr/2012GRENY054.

MLA Handbook (7th Edition):

Yang, Hongxin. “First-principles study of spintronic phenomena in magnetic tunnel junctions and graphene : Etude ab-initio des phénomènes spintronique dans les jonctions tunnel magnétiques et le graphène.” 2012. Web. 20 Mar 2019.

Vancouver:

Yang H. First-principles study of spintronic phenomena in magnetic tunnel junctions and graphene : Etude ab-initio des phénomènes spintronique dans les jonctions tunnel magnétiques et le graphène. [Internet] [Doctoral dissertation]. Université de Grenoble; 2012. [cited 2019 Mar 20]. Available from: http://www.theses.fr/2012GRENY054.

Council of Science Editors:

Yang H. First-principles study of spintronic phenomena in magnetic tunnel junctions and graphene : Etude ab-initio des phénomènes spintronique dans les jonctions tunnel magnétiques et le graphène. [Doctoral Dissertation]. Université de Grenoble; 2012. Available from: http://www.theses.fr/2012GRENY054


Université de Grenoble

27. Di Pendina, Grégory. Conception innovante et développement d'outils de conception d'ASIC pour Technologie Hybride CMOS / Magnétique : ASIC Innovative design and Process Design Kit development for Hybride CMOS / Magnetic Technology.

Degree: Docteur es, Sciences et technologie industrielles, 2012, Université de Grenoble

Depuis plusieurs années de nombreuses technologies non volatiles sont apparues et ont pris place principalement dans le monde de la mémoire, tendant à remplacer tout… (more)

Subjects/Keywords: Spintronique; Hybride CMOS/Magnétique; JTM: Jonction Tunnel Magnétique,Circuit intégré; Non volatilité; Kit de conception; Spintronic; Hybrid CMOS/Magnetic; MTJ: Magnetic tunnel junction; Integrated circuit; Non volatility; Design kit

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APA (6th Edition):

Di Pendina, G. (2012). Conception innovante et développement d'outils de conception d'ASIC pour Technologie Hybride CMOS / Magnétique : ASIC Innovative design and Process Design Kit development for Hybride CMOS / Magnetic Technology. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2012GRENT035

Chicago Manual of Style (16th Edition):

Di Pendina, Grégory. “Conception innovante et développement d'outils de conception d'ASIC pour Technologie Hybride CMOS / Magnétique : ASIC Innovative design and Process Design Kit development for Hybride CMOS / Magnetic Technology.” 2012. Doctoral Dissertation, Université de Grenoble. Accessed March 20, 2019. http://www.theses.fr/2012GRENT035.

MLA Handbook (7th Edition):

Di Pendina, Grégory. “Conception innovante et développement d'outils de conception d'ASIC pour Technologie Hybride CMOS / Magnétique : ASIC Innovative design and Process Design Kit development for Hybride CMOS / Magnetic Technology.” 2012. Web. 20 Mar 2019.

Vancouver:

Di Pendina G. Conception innovante et développement d'outils de conception d'ASIC pour Technologie Hybride CMOS / Magnétique : ASIC Innovative design and Process Design Kit development for Hybride CMOS / Magnetic Technology. [Internet] [Doctoral dissertation]. Université de Grenoble; 2012. [cited 2019 Mar 20]. Available from: http://www.theses.fr/2012GRENT035.

Council of Science Editors:

Di Pendina G. Conception innovante et développement d'outils de conception d'ASIC pour Technologie Hybride CMOS / Magnétique : ASIC Innovative design and Process Design Kit development for Hybride CMOS / Magnetic Technology. [Doctoral Dissertation]. Université de Grenoble; 2012. Available from: http://www.theses.fr/2012GRENT035


Université Paris-Sud – Paris XI

28. Kang, Wang. Conception de la mémoire magnétique par couple de transfert de spin et sa recherche de fiabilité : Spin Transfer Torque Magnetic Random Access Memory Design and Its Reliability Research.

Degree: Docteur es, Physique, 2014, Université Paris-Sud – Paris XI

Cette thèse vise principalement à faire face à la fiabilité de stockage de STT-MRAM au niveau dispositif, au niveau circuit et au niveau système. Les… (more)

Subjects/Keywords: Spintronique; Mémoire magnétique par couple de transfert de spin; Jonction tunnel magnétique; Fiabilité; Spintronics; Spin transfer torque magnetic random access memory; Magnetic tunnel junction; Reliability

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APA (6th Edition):

Kang, W. (2014). Conception de la mémoire magnétique par couple de transfert de spin et sa recherche de fiabilité : Spin Transfer Torque Magnetic Random Access Memory Design and Its Reliability Research. (Doctoral Dissertation). Université Paris-Sud – Paris XI. Retrieved from http://www.theses.fr/2014PA112291

Chicago Manual of Style (16th Edition):

Kang, Wang. “Conception de la mémoire magnétique par couple de transfert de spin et sa recherche de fiabilité : Spin Transfer Torque Magnetic Random Access Memory Design and Its Reliability Research.” 2014. Doctoral Dissertation, Université Paris-Sud – Paris XI. Accessed March 20, 2019. http://www.theses.fr/2014PA112291.

MLA Handbook (7th Edition):

Kang, Wang. “Conception de la mémoire magnétique par couple de transfert de spin et sa recherche de fiabilité : Spin Transfer Torque Magnetic Random Access Memory Design and Its Reliability Research.” 2014. Web. 20 Mar 2019.

Vancouver:

Kang W. Conception de la mémoire magnétique par couple de transfert de spin et sa recherche de fiabilité : Spin Transfer Torque Magnetic Random Access Memory Design and Its Reliability Research. [Internet] [Doctoral dissertation]. Université Paris-Sud – Paris XI; 2014. [cited 2019 Mar 20]. Available from: http://www.theses.fr/2014PA112291.

Council of Science Editors:

Kang W. Conception de la mémoire magnétique par couple de transfert de spin et sa recherche de fiabilité : Spin Transfer Torque Magnetic Random Access Memory Design and Its Reliability Research. [Doctoral Dissertation]. Université Paris-Sud – Paris XI; 2014. Available from: http://www.theses.fr/2014PA112291

29. Wang, Zhaohao. Modélisation compacte et conception de circuit à base de jonction tunnel ferroélectrique et de jonction tunnel magnétique exploitant le transfert de spin assisté par effet Hall de spin : Compact modeling and circuit design based on ferroelectric tunnel junction and spin-Hall-assisted spin-transfer torque.

Degree: Docteur es, Physique, 2015, Paris Saclay

Les mémoires non-volatiles (MNV) sont l'objet d'un effort de recherche croissant du fait de leur capacité à limiter la consommation statique, qui obère habituellement la… (more)

Subjects/Keywords: Jonction tunnel ferroélectrique; Jonction tunnel magnétique; Effet Hall de spin; Transfert de spin; Modèle compact; Circuits non-volatiles; Ferroelectric tunnel junction; Magnetic tunnel junction; Spin-Hall effect; Spin-Transfer torque; Compact model; Non-Volatile circuits

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, Z. (2015). Modélisation compacte et conception de circuit à base de jonction tunnel ferroélectrique et de jonction tunnel magnétique exploitant le transfert de spin assisté par effet Hall de spin : Compact modeling and circuit design based on ferroelectric tunnel junction and spin-Hall-assisted spin-transfer torque. (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2015SACLS036

Chicago Manual of Style (16th Edition):

Wang, Zhaohao. “Modélisation compacte et conception de circuit à base de jonction tunnel ferroélectrique et de jonction tunnel magnétique exploitant le transfert de spin assisté par effet Hall de spin : Compact modeling and circuit design based on ferroelectric tunnel junction and spin-Hall-assisted spin-transfer torque.” 2015. Doctoral Dissertation, Paris Saclay. Accessed March 20, 2019. http://www.theses.fr/2015SACLS036.

MLA Handbook (7th Edition):

Wang, Zhaohao. “Modélisation compacte et conception de circuit à base de jonction tunnel ferroélectrique et de jonction tunnel magnétique exploitant le transfert de spin assisté par effet Hall de spin : Compact modeling and circuit design based on ferroelectric tunnel junction and spin-Hall-assisted spin-transfer torque.” 2015. Web. 20 Mar 2019.

Vancouver:

Wang Z. Modélisation compacte et conception de circuit à base de jonction tunnel ferroélectrique et de jonction tunnel magnétique exploitant le transfert de spin assisté par effet Hall de spin : Compact modeling and circuit design based on ferroelectric tunnel junction and spin-Hall-assisted spin-transfer torque. [Internet] [Doctoral dissertation]. Paris Saclay; 2015. [cited 2019 Mar 20]. Available from: http://www.theses.fr/2015SACLS036.

Council of Science Editors:

Wang Z. Modélisation compacte et conception de circuit à base de jonction tunnel ferroélectrique et de jonction tunnel magnétique exploitant le transfert de spin assisté par effet Hall de spin : Compact modeling and circuit design based on ferroelectric tunnel junction and spin-Hall-assisted spin-transfer torque. [Doctoral Dissertation]. Paris Saclay; 2015. Available from: http://www.theses.fr/2015SACLS036


University of Alabama

30. Singh, Amritpal. Multi-layer magnetism and thermal stability in perpendicular magnetic tunnel junctions.

Degree: 2014, University of Alabama

 Thermal stability is one of the critical issues for applications of nano-magnets for spin-logic applications. Our work is focused on the thermal stability in perpendicular… (more)

Subjects/Keywords: Electronic Thesis or Dissertation;  – thesis; Physics; Current density; Interlayer exchange coupling; Perpendicular magnetic tunnel junction; PMA; Switching time; Thermal stabilty

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Singh, A. (2014). Multi-layer magnetism and thermal stability in perpendicular magnetic tunnel junctions. (Thesis). University of Alabama. Retrieved from http://purl.lib.ua.edu/116146

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Singh, Amritpal. “Multi-layer magnetism and thermal stability in perpendicular magnetic tunnel junctions.” 2014. Thesis, University of Alabama. Accessed March 20, 2019. http://purl.lib.ua.edu/116146.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Singh, Amritpal. “Multi-layer magnetism and thermal stability in perpendicular magnetic tunnel junctions.” 2014. Web. 20 Mar 2019.

Vancouver:

Singh A. Multi-layer magnetism and thermal stability in perpendicular magnetic tunnel junctions. [Internet] [Thesis]. University of Alabama; 2014. [cited 2019 Mar 20]. Available from: http://purl.lib.ua.edu/116146.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Singh A. Multi-layer magnetism and thermal stability in perpendicular magnetic tunnel junctions. [Thesis]. University of Alabama; 2014. Available from: http://purl.lib.ua.edu/116146

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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