Advanced search options

Advanced Search Options 🞨

Browse by author name (“Author name starts with…”).

Find ETDs with:

in
/  
in
/  
in
/  
in

Written in Published in Earliest date Latest date

Sorted by

Results per page:

Sorted by: relevance · author · university · dateNew search

You searched for subject:( gallium nitride). Showing records 1 – 30 of 424 total matches.

[1] [2] [3] [4] [5] … [15]

Search Limiters

Last 2 Years | English Only

Degrees

Levels

Languages

Country

▼ Search Limiters

1. Hautakangas, Sami. Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride.

Degree: 2005, Helsinki University of Technology

The effects of impurity atoms as well as various growth methods to the formation of vacancy type defects in gallium nitride (GaN) have been studied… (more)

Subjects/Keywords: gallium nitride; positron annihilation; vacancy

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hautakangas, S. (2005). Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride. (Thesis). Helsinki University of Technology. Retrieved from http://lib.tkk.fi/Diss/2005/isbn9512276674/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hautakangas, Sami. “Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride.” 2005. Thesis, Helsinki University of Technology. Accessed December 10, 2019. http://lib.tkk.fi/Diss/2005/isbn9512276674/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hautakangas, Sami. “Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride.” 2005. Web. 10 Dec 2019.

Vancouver:

Hautakangas S. Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride. [Internet] [Thesis]. Helsinki University of Technology; 2005. [cited 2019 Dec 10]. Available from: http://lib.tkk.fi/Diss/2005/isbn9512276674/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hautakangas S. Impurity Decoration of Native Vacancies in Ga and N Sublattices of Gallium Nitride. [Thesis]. Helsinki University of Technology; 2005. Available from: http://lib.tkk.fi/Diss/2005/isbn9512276674/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Hong Kong

2. Zhang, Yiyun. GaN-based microdisk lasers on Si.

Degree: PhD, 2016, University of Hong Kong

 III-nitride compound semiconductors have emerged as indispensable materials for a wide range of optoelectronic devices. With wide and direct energy bandgaps, emissions from III-nitride semiconductors… (more)

Subjects/Keywords: Lasers; Gallium nitride; Semiconductors

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zhang, Y. (2016). GaN-based microdisk lasers on Si. (Doctoral Dissertation). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/236587

Chicago Manual of Style (16th Edition):

Zhang, Yiyun. “GaN-based microdisk lasers on Si.” 2016. Doctoral Dissertation, University of Hong Kong. Accessed December 10, 2019. http://hdl.handle.net/10722/236587.

MLA Handbook (7th Edition):

Zhang, Yiyun. “GaN-based microdisk lasers on Si.” 2016. Web. 10 Dec 2019.

Vancouver:

Zhang Y. GaN-based microdisk lasers on Si. [Internet] [Doctoral dissertation]. University of Hong Kong; 2016. [cited 2019 Dec 10]. Available from: http://hdl.handle.net/10722/236587.

Council of Science Editors:

Zhang Y. GaN-based microdisk lasers on Si. [Doctoral Dissertation]. University of Hong Kong; 2016. Available from: http://hdl.handle.net/10722/236587


University of Hong Kong

3. Mak, Yick-hong, Giuseppe. Development of laser processes for nitride light-emitting diodes and its applications.

Degree: PhD, 2010, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Doctoral

Doctor of Philosophy

Advisors/Committee Members: Lam, EYM, Choi, HW.

Subjects/Keywords: Light emitting diodes.; Gallium nitride.

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mak, Yick-hong, G. (2010). Development of laser processes for nitride light-emitting diodes and its applications. (Doctoral Dissertation). University of Hong Kong. Retrieved from Mak, Y. G. [麥易康]. (2010). Development of laser processes for nitride light-emitting diodes and its applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4587982 ; http://dx.doi.org/10.5353/th_b4587982 ; http://hdl.handle.net/10722/134052

Chicago Manual of Style (16th Edition):

Mak, Yick-hong, Giuseppe. “Development of laser processes for nitride light-emitting diodes and its applications.” 2010. Doctoral Dissertation, University of Hong Kong. Accessed December 10, 2019. Mak, Y. G. [麥易康]. (2010). Development of laser processes for nitride light-emitting diodes and its applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4587982 ; http://dx.doi.org/10.5353/th_b4587982 ; http://hdl.handle.net/10722/134052.

MLA Handbook (7th Edition):

Mak, Yick-hong, Giuseppe. “Development of laser processes for nitride light-emitting diodes and its applications.” 2010. Web. 10 Dec 2019.

Vancouver:

Mak, Yick-hong G. Development of laser processes for nitride light-emitting diodes and its applications. [Internet] [Doctoral dissertation]. University of Hong Kong; 2010. [cited 2019 Dec 10]. Available from: Mak, Y. G. [麥易康]. (2010). Development of laser processes for nitride light-emitting diodes and its applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4587982 ; http://dx.doi.org/10.5353/th_b4587982 ; http://hdl.handle.net/10722/134052.

Council of Science Editors:

Mak, Yick-hong G. Development of laser processes for nitride light-emitting diodes and its applications. [Doctoral Dissertation]. University of Hong Kong; 2010. Available from: Mak, Y. G. [麥易康]. (2010). Development of laser processes for nitride light-emitting diodes and its applications. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4587982 ; http://dx.doi.org/10.5353/th_b4587982 ; http://hdl.handle.net/10722/134052


University of Hong Kong

4. Zhang, Xuhui. GaN-based free-standing microdisks and nanostructures.

Degree: PhD, 2014, University of Hong Kong

 In this thesis, various micro- and nano-structures, fabricated by micro- and nanosphere lithography (NSL), were applied onto gallium nitride (GaN) based direct-bandgap semiconductors to develop… (more)

Subjects/Keywords: Nanostructures; Gallium nitride; Microstructure

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zhang, X. (2014). GaN-based free-standing microdisks and nanostructures. (Doctoral Dissertation). University of Hong Kong. Retrieved from Zhang, X. [張旭輝]. (2014). GaN-based free-standing microdisks and nanostructures. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5334871 ; http://dx.doi.org/10.5353/th_b5334871 ; http://hdl.handle.net/10722/207202

Chicago Manual of Style (16th Edition):

Zhang, Xuhui. “GaN-based free-standing microdisks and nanostructures.” 2014. Doctoral Dissertation, University of Hong Kong. Accessed December 10, 2019. Zhang, X. [張旭輝]. (2014). GaN-based free-standing microdisks and nanostructures. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5334871 ; http://dx.doi.org/10.5353/th_b5334871 ; http://hdl.handle.net/10722/207202.

MLA Handbook (7th Edition):

Zhang, Xuhui. “GaN-based free-standing microdisks and nanostructures.” 2014. Web. 10 Dec 2019.

Vancouver:

Zhang X. GaN-based free-standing microdisks and nanostructures. [Internet] [Doctoral dissertation]. University of Hong Kong; 2014. [cited 2019 Dec 10]. Available from: Zhang, X. [張旭輝]. (2014). GaN-based free-standing microdisks and nanostructures. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5334871 ; http://dx.doi.org/10.5353/th_b5334871 ; http://hdl.handle.net/10722/207202.

Council of Science Editors:

Zhang X. GaN-based free-standing microdisks and nanostructures. [Doctoral Dissertation]. University of Hong Kong; 2014. Available from: Zhang, X. [張旭輝]. (2014). GaN-based free-standing microdisks and nanostructures. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5334871 ; http://dx.doi.org/10.5353/th_b5334871 ; http://hdl.handle.net/10722/207202


Cornell University

5. Brown, Richard. Advanced Dielectrics For Gallium Nitride Power Electronics .

Degree: 2011, Cornell University

 This dissertation details the synthesis, characterization, and application of low-pressure chemical vapor deposited (LPCVD) Aluminum Silicon Nitride (Al x Siy Nz ) dielectrics to AlGaN/GaN… (more)

Subjects/Keywords: Gallium Nitride; hemt; Dielectric

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Brown, R. (2011). Advanced Dielectrics For Gallium Nitride Power Electronics . (Thesis). Cornell University. Retrieved from http://hdl.handle.net/1813/33475

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Brown, Richard. “Advanced Dielectrics For Gallium Nitride Power Electronics .” 2011. Thesis, Cornell University. Accessed December 10, 2019. http://hdl.handle.net/1813/33475.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Brown, Richard. “Advanced Dielectrics For Gallium Nitride Power Electronics .” 2011. Web. 10 Dec 2019.

Vancouver:

Brown R. Advanced Dielectrics For Gallium Nitride Power Electronics . [Internet] [Thesis]. Cornell University; 2011. [cited 2019 Dec 10]. Available from: http://hdl.handle.net/1813/33475.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Brown R. Advanced Dielectrics For Gallium Nitride Power Electronics . [Thesis]. Cornell University; 2011. Available from: http://hdl.handle.net/1813/33475

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

6. Malkowski, Thomas. High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer.

Degree: 2016, University of California – eScholarship, University of California

Gallium nitride (GaN) has become an important semiconductor for the optoelectronics and power electronics fields in the pursuit of high efficiency devices. However, the lack… (more)

Subjects/Keywords: Materials Science; ammonothermal; gallium nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Malkowski, T. (2016). High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer. (Thesis). University of California – eScholarship, University of California. Retrieved from http://www.escholarship.org/uc/item/1tf7z2bm

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Malkowski, Thomas. “High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer.” 2016. Thesis, University of California – eScholarship, University of California. Accessed December 10, 2019. http://www.escholarship.org/uc/item/1tf7z2bm.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Malkowski, Thomas. “High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer.” 2016. Web. 10 Dec 2019.

Vancouver:

Malkowski T. High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer. [Internet] [Thesis]. University of California – eScholarship, University of California; 2016. [cited 2019 Dec 10]. Available from: http://www.escholarship.org/uc/item/1tf7z2bm.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Malkowski T. High-Temperature Growth of Gallium Nitride Using the Ammonothermal Method with Ammonium Chloride Mineralizer. [Thesis]. University of California – eScholarship, University of California; 2016. Available from: http://www.escholarship.org/uc/item/1tf7z2bm

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Manchester

7. Jim, Lydia Man Wai. Physics of Gallium Nitride Quantum Wells.

Degree: 2019, University of Manchester

 In this thesis, studies performed on InGaN/GaN quantum well (QW) structures using photoluminescence (PL) spectroscopy are presented. Green light-emitting InGaN/GaN QW structures with a varying… (more)

Subjects/Keywords: InGaN; Gallium Nitride; Quantum Wells

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Jim, L. M. W. (2019). Physics of Gallium Nitride Quantum Wells. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:319236

Chicago Manual of Style (16th Edition):

Jim, Lydia Man Wai. “Physics of Gallium Nitride Quantum Wells.” 2019. Doctoral Dissertation, University of Manchester. Accessed December 10, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:319236.

MLA Handbook (7th Edition):

Jim, Lydia Man Wai. “Physics of Gallium Nitride Quantum Wells.” 2019. Web. 10 Dec 2019.

Vancouver:

Jim LMW. Physics of Gallium Nitride Quantum Wells. [Internet] [Doctoral dissertation]. University of Manchester; 2019. [cited 2019 Dec 10]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:319236.

Council of Science Editors:

Jim LMW. Physics of Gallium Nitride Quantum Wells. [Doctoral Dissertation]. University of Manchester; 2019. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:319236

8. Rackauskas, Ben. The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability.

Degree: PhD, 2019, University of Bristol

 Highly efficient power conversion beyond the capabilities of silicon electronics is required to meet the growing global demand for power and to enable emerging technologies.… (more)

Subjects/Keywords: Gallium Nitride; Reliability; Leakage mechanisms

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rackauskas, B. (2019). The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability. (Doctoral Dissertation). University of Bristol. Retrieved from http://hdl.handle.net/1983/c126d16b-d8fa-4526-8836-131e6c2bd2ab

Chicago Manual of Style (16th Edition):

Rackauskas, Ben. “The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability.” 2019. Doctoral Dissertation, University of Bristol. Accessed December 10, 2019. http://hdl.handle.net/1983/c126d16b-d8fa-4526-8836-131e6c2bd2ab.

MLA Handbook (7th Edition):

Rackauskas, Ben. “The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability.” 2019. Web. 10 Dec 2019.

Vancouver:

Rackauskas B. The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability. [Internet] [Doctoral dissertation]. University of Bristol; 2019. [cited 2019 Dec 10]. Available from: http://hdl.handle.net/1983/c126d16b-d8fa-4526-8836-131e6c2bd2ab.

Council of Science Editors:

Rackauskas B. The characterisation of gallium nitride devices for power electronic applications : leakage mechanisms and device reliability. [Doctoral Dissertation]. University of Bristol; 2019. Available from: http://hdl.handle.net/1983/c126d16b-d8fa-4526-8836-131e6c2bd2ab


Indian Institute of Science

9. Yaddanapudi, G R Krishna. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.

Degree: 2016, Indian Institute of Science

 Group III-Nitrides (GaN, InN & AlN) are considered one of the most important class of semiconducting materials after Si and GaAs. The excellent optical and… (more)

Subjects/Keywords: Semiconductors; Nitrides; Gallium Nitride; N-Polar Gallium Nitride; Metal Organic Chemical Vapor Deposition (MOCVD); Galllium Nitride Growth; High Temperature Gallium Nitride; Low Temperature Gallium Nitride; GaN; Materials Engineering

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yaddanapudi, G. R. K. (2016). Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. (Thesis). Indian Institute of Science. Retrieved from http://etd.iisc.ernet.in/handle/2005/2662 ; http://etd.ncsi.iisc.ernet.in/abstracts/3477/G27144-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2016. Thesis, Indian Institute of Science. Accessed December 10, 2019. http://etd.iisc.ernet.in/handle/2005/2662 ; http://etd.ncsi.iisc.ernet.in/abstracts/3477/G27144-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2016. Web. 10 Dec 2019.

Vancouver:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Internet] [Thesis]. Indian Institute of Science; 2016. [cited 2019 Dec 10]. Available from: http://etd.iisc.ernet.in/handle/2005/2662 ; http://etd.ncsi.iisc.ernet.in/abstracts/3477/G27144-Abs.pdf.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Thesis]. Indian Institute of Science; 2016. Available from: http://etd.iisc.ernet.in/handle/2005/2662 ; http://etd.ncsi.iisc.ernet.in/abstracts/3477/G27144-Abs.pdf

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Indian Institute of Science

10. Yaddanapudi, G R Krishna. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.

Degree: 2016, Indian Institute of Science

 Group III-Nitrides (GaN, InN & AlN) are considered one of the most important class of semiconducting materials after Si and GaAs. The excellent optical and… (more)

Subjects/Keywords: Semiconductors; Nitrides; Gallium Nitride; N-Polar Gallium Nitride; Metal Organic Chemical Vapor Deposition (MOCVD); Galllium Nitride Growth; High Temperature Gallium Nitride; Low Temperature Gallium Nitride; GaN; Materials Engineering

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yaddanapudi, G. R. K. (2016). Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. (Thesis). Indian Institute of Science. Retrieved from http://hdl.handle.net/2005/2662

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2016. Thesis, Indian Institute of Science. Accessed December 10, 2019. http://hdl.handle.net/2005/2662.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yaddanapudi, G R Krishna. “Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD.” 2016. Web. 10 Dec 2019.

Vancouver:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Internet] [Thesis]. Indian Institute of Science; 2016. [cited 2019 Dec 10]. Available from: http://hdl.handle.net/2005/2662.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yaddanapudi GRK. Effect of Process Parameters on the Growth of N-Polar GaN on Sapphire by MOCVD. [Thesis]. Indian Institute of Science; 2016. Available from: http://hdl.handle.net/2005/2662

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Anna University

11. Puviarasu P. Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;.

Degree: Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers, 2014, Anna University

Group III nitrides such as Indium Nitride Gallium Nitride and Aluminium Nitride are currently the most challenging and technologically important materials which have the potential… (more)

Subjects/Keywords: Aluminium nitride; Chloride vapour phase epitaxy; Epitaxial techniques; Gallium nitride; Gallium nitride epilayers; Indium nitride; Science and humanities

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

P, P. (2014). Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/24564

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

P, Puviarasu. “Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;.” 2014. Thesis, Anna University. Accessed December 10, 2019. http://shodhganga.inflibnet.ac.in/handle/10603/24564.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

P, Puviarasu. “Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;.” 2014. Web. 10 Dec 2019.

Vancouver:

P P. Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;. [Internet] [Thesis]. Anna University; 2014. [cited 2019 Dec 10]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/24564.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

P P. Studies on the growth and characterisation of gallium nitride using chloride vapour phase epitaxy and the effect of swift heavy ion irradiations on gallium nitride epilayers;. [Thesis]. Anna University; 2014. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/24564

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Anna University

12. Suresh kumar V. Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;.

Degree: Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers, 2015, Anna University

Gallium nitride GaN is one of the most promising materials newlineamong group III nitrides because its bandgap of 34 eV makes it the best newlinecandidate… (more)

Subjects/Keywords: gallium nitride; nanostructures; science and humanities

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

V, S. k. (2015). Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/41814

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

V, Suresh kumar. “Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;.” 2015. Thesis, Anna University. Accessed December 10, 2019. http://shodhganga.inflibnet.ac.in/handle/10603/41814.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

V, Suresh kumar. “Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;.” 2015. Web. 10 Dec 2019.

Vancouver:

V Sk. Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;. [Internet] [Thesis]. Anna University; 2015. [cited 2019 Dec 10]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/41814.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

V Sk. Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;. [Thesis]. Anna University; 2015. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/41814

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Alberta

13. von Hauff, Peter A. Metal Oxide Processing on Gallium Nitride and Silino.

Degree: MS, Department of Electrical and Computer Engineering, 2012, University of Alberta

 III-V Nitrides are intriguing semiconductors for high-power RF amplifiers and other applications. Gallium Nitride has become popular for mm-HFETs due to its material properties. The… (more)

Subjects/Keywords: Atomic Layer Depostion; metal oxides; Gallium Nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

von Hauff, P. A. (2012). Metal Oxide Processing on Gallium Nitride and Silino. (Masters Thesis). University of Alberta. Retrieved from https://era.library.ualberta.ca/files/pz50gw42f

Chicago Manual of Style (16th Edition):

von Hauff, Peter A. “Metal Oxide Processing on Gallium Nitride and Silino.” 2012. Masters Thesis, University of Alberta. Accessed December 10, 2019. https://era.library.ualberta.ca/files/pz50gw42f.

MLA Handbook (7th Edition):

von Hauff, Peter A. “Metal Oxide Processing on Gallium Nitride and Silino.” 2012. Web. 10 Dec 2019.

Vancouver:

von Hauff PA. Metal Oxide Processing on Gallium Nitride and Silino. [Internet] [Masters thesis]. University of Alberta; 2012. [cited 2019 Dec 10]. Available from: https://era.library.ualberta.ca/files/pz50gw42f.

Council of Science Editors:

von Hauff PA. Metal Oxide Processing on Gallium Nitride and Silino. [Masters Thesis]. University of Alberta; 2012. Available from: https://era.library.ualberta.ca/files/pz50gw42f


University of Colorado

14. Montague, Joshua R. As-Grown Gallium Nitride Nanowire Electromechanical Resonators.

Degree: PhD, Physics, 2013, University of Colorado

  Technological development in recent years has led to a ubiquity of micro- and nano-scale electromechanical devices. Sensors for monitoring temperature, pressure, mass, etc., are… (more)

Subjects/Keywords: dissipation; gallium nitride; mems; nanowire; resonator; Physics

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Montague, J. R. (2013). As-Grown Gallium Nitride Nanowire Electromechanical Resonators. (Doctoral Dissertation). University of Colorado. Retrieved from http://scholar.colorado.edu/phys_gradetds/74

Chicago Manual of Style (16th Edition):

Montague, Joshua R. “As-Grown Gallium Nitride Nanowire Electromechanical Resonators.” 2013. Doctoral Dissertation, University of Colorado. Accessed December 10, 2019. http://scholar.colorado.edu/phys_gradetds/74.

MLA Handbook (7th Edition):

Montague, Joshua R. “As-Grown Gallium Nitride Nanowire Electromechanical Resonators.” 2013. Web. 10 Dec 2019.

Vancouver:

Montague JR. As-Grown Gallium Nitride Nanowire Electromechanical Resonators. [Internet] [Doctoral dissertation]. University of Colorado; 2013. [cited 2019 Dec 10]. Available from: http://scholar.colorado.edu/phys_gradetds/74.

Council of Science Editors:

Montague JR. As-Grown Gallium Nitride Nanowire Electromechanical Resonators. [Doctoral Dissertation]. University of Colorado; 2013. Available from: http://scholar.colorado.edu/phys_gradetds/74


Anna University

15. Munawar Basha S. Investigations on the magnetic properties of doped gallium nitride ion irradiation studies and nanostructure growth;.

Degree: 2014, Anna University

Gallium nitride (GaN) is by far more extensively studied than the newlineother III-nitrides because of its technological status. It has a wide direct band newlinegap… (more)

Subjects/Keywords: Gallium nitride; magnetic; ion irradiation; nanostructure

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

S, M. B. (2014). Investigations on the magnetic properties of doped gallium nitride ion irradiation studies and nanostructure growth;. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/14542

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

S, Munawar Basha. “Investigations on the magnetic properties of doped gallium nitride ion irradiation studies and nanostructure growth;.” 2014. Thesis, Anna University. Accessed December 10, 2019. http://shodhganga.inflibnet.ac.in/handle/10603/14542.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

S, Munawar Basha. “Investigations on the magnetic properties of doped gallium nitride ion irradiation studies and nanostructure growth;.” 2014. Web. 10 Dec 2019.

Vancouver:

S MB. Investigations on the magnetic properties of doped gallium nitride ion irradiation studies and nanostructure growth;. [Internet] [Thesis]. Anna University; 2014. [cited 2019 Dec 10]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/14542.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

S MB. Investigations on the magnetic properties of doped gallium nitride ion irradiation studies and nanostructure growth;. [Thesis]. Anna University; 2014. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/14542

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Anna University

16. Suresh kumar V. Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;.

Degree: Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers, 2015, Anna University

Gallium nitride GaN is one of the most promising materials newlineamong group III nitrides because its bandgap of 34 eV makes it the best newlinecandidate… (more)

Subjects/Keywords: gallium nitride; ion irradiation; science and humanities

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

V, S. k. (2015). Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;. (Thesis). Anna University. Retrieved from http://shodhganga.inflibnet.ac.in/handle/10603/34219

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

V, Suresh kumar. “Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;.” 2015. Thesis, Anna University. Accessed December 10, 2019. http://shodhganga.inflibnet.ac.in/handle/10603/34219.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

V, Suresh kumar. “Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;.” 2015. Web. 10 Dec 2019.

Vancouver:

V Sk. Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;. [Internet] [Thesis]. Anna University; 2015. [cited 2019 Dec 10]. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/34219.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

V Sk. Growth and characterisation of gallium nitride nanostructures and investigations on the effect of ion irradiation on mocvd grown gallium nitride epilayers;. [Thesis]. Anna University; 2015. Available from: http://shodhganga.inflibnet.ac.in/handle/10603/34219

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Hong Kong

17. Wang, Xianghua. Design and laser fabrication of GaN/sapphire light-emitting diodes.

Degree: PhD, 2010, University of Hong Kong

published_or_final_version

Electrical and Electronic Engineering

Doctoral

Doctor of Philosophy

Advisors/Committee Members: Lai, PT, Choi, HW.

Subjects/Keywords: Sapphires.; Gallium nitride.; Light emitting diodes.

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, X. (2010). Design and laser fabrication of GaN/sapphire light-emitting diodes. (Doctoral Dissertation). University of Hong Kong. Retrieved from Wang, X. [王向华]. (2010). Design and laser fabrication of GaN/sapphire light-emitting diodes. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4514307 ; http://dx.doi.org/10.5353/th_b4514307 ; http://hdl.handle.net/10722/131792

Chicago Manual of Style (16th Edition):

Wang, Xianghua. “Design and laser fabrication of GaN/sapphire light-emitting diodes.” 2010. Doctoral Dissertation, University of Hong Kong. Accessed December 10, 2019. Wang, X. [王向华]. (2010). Design and laser fabrication of GaN/sapphire light-emitting diodes. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4514307 ; http://dx.doi.org/10.5353/th_b4514307 ; http://hdl.handle.net/10722/131792.

MLA Handbook (7th Edition):

Wang, Xianghua. “Design and laser fabrication of GaN/sapphire light-emitting diodes.” 2010. Web. 10 Dec 2019.

Vancouver:

Wang X. Design and laser fabrication of GaN/sapphire light-emitting diodes. [Internet] [Doctoral dissertation]. University of Hong Kong; 2010. [cited 2019 Dec 10]. Available from: Wang, X. [王向华]. (2010). Design and laser fabrication of GaN/sapphire light-emitting diodes. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4514307 ; http://dx.doi.org/10.5353/th_b4514307 ; http://hdl.handle.net/10722/131792.

Council of Science Editors:

Wang X. Design and laser fabrication of GaN/sapphire light-emitting diodes. [Doctoral Dissertation]. University of Hong Kong; 2010. Available from: Wang, X. [王向华]. (2010). Design and laser fabrication of GaN/sapphire light-emitting diodes. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b4514307 ; http://dx.doi.org/10.5353/th_b4514307 ; http://hdl.handle.net/10722/131792


University of Hong Kong

18. 王銘正; Wang, Mingzheng. Optical studies of exciton-phonon coupling in nonpolar plane GaN.

Degree: M. Phil., 2017, University of Hong Kong

 Optical studies of nonpolar plane GaN substrates with emphasis on exciton-phonon coupling were carried carefully. These substrates were grown via HVPE method and had a… (more)

Subjects/Keywords: Optical properties - Gallium nitride; Electron-phonon interactions

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

王銘正; Wang, M. (2017). Optical studies of exciton-phonon coupling in nonpolar plane GaN. (Masters Thesis). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/249254

Chicago Manual of Style (16th Edition):

王銘正; Wang, Mingzheng. “Optical studies of exciton-phonon coupling in nonpolar plane GaN.” 2017. Masters Thesis, University of Hong Kong. Accessed December 10, 2019. http://hdl.handle.net/10722/249254.

MLA Handbook (7th Edition):

王銘正; Wang, Mingzheng. “Optical studies of exciton-phonon coupling in nonpolar plane GaN.” 2017. Web. 10 Dec 2019.

Vancouver:

王銘正; Wang M. Optical studies of exciton-phonon coupling in nonpolar plane GaN. [Internet] [Masters thesis]. University of Hong Kong; 2017. [cited 2019 Dec 10]. Available from: http://hdl.handle.net/10722/249254.

Council of Science Editors:

王銘正; Wang M. Optical studies of exciton-phonon coupling in nonpolar plane GaN. [Masters Thesis]. University of Hong Kong; 2017. Available from: http://hdl.handle.net/10722/249254


Hong Kong University of Science and Technology

19. Yuan, Li. Process modeling and device technology of GaN normally-off power transistors.

Degree: 2011, Hong Kong University of Science and Technology

 The wide bandgap GaN-based transistors are attractive for power electronics applications owing to the superior intrinsic properties of the materials. In addition to the breakdown… (more)

Subjects/Keywords: Power transistors; Gallium nitride; Semiconductors  – Materials

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Yuan, L. (2011). Process modeling and device technology of GaN normally-off power transistors. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1146196 ; http://repository.ust.hk/ir/bitstream/1783.1-7195/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yuan, Li. “Process modeling and device technology of GaN normally-off power transistors.” 2011. Thesis, Hong Kong University of Science and Technology. Accessed December 10, 2019. https://doi.org/10.14711/thesis-b1146196 ; http://repository.ust.hk/ir/bitstream/1783.1-7195/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yuan, Li. “Process modeling and device technology of GaN normally-off power transistors.” 2011. Web. 10 Dec 2019.

Vancouver:

Yuan L. Process modeling and device technology of GaN normally-off power transistors. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2011. [cited 2019 Dec 10]. Available from: https://doi.org/10.14711/thesis-b1146196 ; http://repository.ust.hk/ir/bitstream/1783.1-7195/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yuan L. Process modeling and device technology of GaN normally-off power transistors. [Thesis]. Hong Kong University of Science and Technology; 2011. Available from: https://doi.org/10.14711/thesis-b1146196 ; http://repository.ust.hk/ir/bitstream/1783.1-7195/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

20. Lu, Jun-yong. Mechanical characterization of GaN epitaxial thin films.

Degree: 2011, Hong Kong University of Science and Technology

 In this work, epitaxial GaN thin films were mechanically characterized. Residual stresses of the films were systematically investigated with micro-Raman spectroscopy and their elastic-plastic properties… (more)

Subjects/Keywords: Thin films  – Mechanical properties; Gallium nitride; Epitaxy

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lu, J. (2011). Mechanical characterization of GaN epitaxial thin films. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1155692 ; http://repository.ust.hk/ir/bitstream/1783.1-7360/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lu, Jun-yong. “Mechanical characterization of GaN epitaxial thin films.” 2011. Thesis, Hong Kong University of Science and Technology. Accessed December 10, 2019. https://doi.org/10.14711/thesis-b1155692 ; http://repository.ust.hk/ir/bitstream/1783.1-7360/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lu, Jun-yong. “Mechanical characterization of GaN epitaxial thin films.” 2011. Web. 10 Dec 2019.

Vancouver:

Lu J. Mechanical characterization of GaN epitaxial thin films. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2011. [cited 2019 Dec 10]. Available from: https://doi.org/10.14711/thesis-b1155692 ; http://repository.ust.hk/ir/bitstream/1783.1-7360/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lu J. Mechanical characterization of GaN epitaxial thin films. [Thesis]. Hong Kong University of Science and Technology; 2011. Available from: https://doi.org/10.14711/thesis-b1155692 ; http://repository.ust.hk/ir/bitstream/1783.1-7360/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

21. Li, Baikui. Magnetotransport and optoelectronic characterizations of AlGaN/GaN heterostructures.

Degree: 2010, Hong Kong University of Science and Technology

 Fluorine plasma (F-plasma) treatment technique can effectively incorporate F-atoms into the AlGaN barrier, depleting the two-dimensional electron gases (2DEG) in AlGaN/GaN high electron mobility transistors… (more)

Subjects/Keywords: Gallium nitride  – Electric properties; Plasma chemistry; Heterostructures

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Li, B. (2010). Magnetotransport and optoelectronic characterizations of AlGaN/GaN heterostructures. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1114674 ; http://repository.ust.hk/ir/bitstream/1783.1-6887/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Li, Baikui. “Magnetotransport and optoelectronic characterizations of AlGaN/GaN heterostructures.” 2010. Thesis, Hong Kong University of Science and Technology. Accessed December 10, 2019. https://doi.org/10.14711/thesis-b1114674 ; http://repository.ust.hk/ir/bitstream/1783.1-6887/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Li, Baikui. “Magnetotransport and optoelectronic characterizations of AlGaN/GaN heterostructures.” 2010. Web. 10 Dec 2019.

Vancouver:

Li B. Magnetotransport and optoelectronic characterizations of AlGaN/GaN heterostructures. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2010. [cited 2019 Dec 10]. Available from: https://doi.org/10.14711/thesis-b1114674 ; http://repository.ust.hk/ir/bitstream/1783.1-6887/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Li B. Magnetotransport and optoelectronic characterizations of AlGaN/GaN heterostructures. [Thesis]. Hong Kong University of Science and Technology; 2010. Available from: https://doi.org/10.14711/thesis-b1114674 ; http://repository.ust.hk/ir/bitstream/1783.1-6887/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

22. Zou, Xinbo. Growth, Fabrication and characterization of InGaN/GaN-based blue, green and yellow LEDs on Si with nanotechnology.

Degree: 2013, Hong Kong University of Science and Technology

 InGaN/GaN-based light emitting diodes (LEDs) grown on Si have generated intensiveresearch interest due to silicon’s low cost, large size availability and good thermal conductivity. However,… (more)

Subjects/Keywords: Light emitting diodes; Nanostructured materials; Gallium nitride

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zou, X. (2013). Growth, Fabrication and characterization of InGaN/GaN-based blue, green and yellow LEDs on Si with nanotechnology. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1214705 ; http://repository.ust.hk/ir/bitstream/1783.1-8142/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zou, Xinbo. “Growth, Fabrication and characterization of InGaN/GaN-based blue, green and yellow LEDs on Si with nanotechnology.” 2013. Thesis, Hong Kong University of Science and Technology. Accessed December 10, 2019. https://doi.org/10.14711/thesis-b1214705 ; http://repository.ust.hk/ir/bitstream/1783.1-8142/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zou, Xinbo. “Growth, Fabrication and characterization of InGaN/GaN-based blue, green and yellow LEDs on Si with nanotechnology.” 2013. Web. 10 Dec 2019.

Vancouver:

Zou X. Growth, Fabrication and characterization of InGaN/GaN-based blue, green and yellow LEDs on Si with nanotechnology. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2013. [cited 2019 Dec 10]. Available from: https://doi.org/10.14711/thesis-b1214705 ; http://repository.ust.hk/ir/bitstream/1783.1-8142/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zou X. Growth, Fabrication and characterization of InGaN/GaN-based blue, green and yellow LEDs on Si with nanotechnology. [Thesis]. Hong Kong University of Science and Technology; 2013. Available from: https://doi.org/10.14711/thesis-b1214705 ; http://repository.ust.hk/ir/bitstream/1783.1-8142/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Hong Kong

23. Wang, Jun. Optical properties of graphene/GaN hybrid structure.

Degree: M. Phil., 2014, University of Hong Kong

Optical properties of graphene/GaN hybrid structure were investigated by using a variety of optical spectroscopy techniques including low-temperature photoluminescence (PL) spectroscopy, time-resolved PL (TRPL) spectroscopy,… (more)

Subjects/Keywords: Graphene - Optical properties; Gallium nitride - Optical properties

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, J. (2014). Optical properties of graphene/GaN hybrid structure. (Masters Thesis). University of Hong Kong. Retrieved from Wang, J. [王俊]. (2014). Optical properties of graphene/GaN hybrid structure. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5223998 ; http://dx.doi.org/10.5353/th_b5223998 ; http://hdl.handle.net/10722/206660

Chicago Manual of Style (16th Edition):

Wang, Jun. “Optical properties of graphene/GaN hybrid structure.” 2014. Masters Thesis, University of Hong Kong. Accessed December 10, 2019. Wang, J. [王俊]. (2014). Optical properties of graphene/GaN hybrid structure. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5223998 ; http://dx.doi.org/10.5353/th_b5223998 ; http://hdl.handle.net/10722/206660.

MLA Handbook (7th Edition):

Wang, Jun. “Optical properties of graphene/GaN hybrid structure.” 2014. Web. 10 Dec 2019.

Vancouver:

Wang J. Optical properties of graphene/GaN hybrid structure. [Internet] [Masters thesis]. University of Hong Kong; 2014. [cited 2019 Dec 10]. Available from: Wang, J. [王俊]. (2014). Optical properties of graphene/GaN hybrid structure. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5223998 ; http://dx.doi.org/10.5353/th_b5223998 ; http://hdl.handle.net/10722/206660.

Council of Science Editors:

Wang J. Optical properties of graphene/GaN hybrid structure. [Masters Thesis]. University of Hong Kong; 2014. Available from: Wang, J. [王俊]. (2014). Optical properties of graphene/GaN hybrid structure. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5223998 ; http://dx.doi.org/10.5353/th_b5223998 ; http://hdl.handle.net/10722/206660


University of Hong Kong

24. 李攜曦.; Li, Kwai-hei. Nanostructuring for nitride light-emitting diodes and opticalcavities.

Degree: PhD, 2013, University of Hong Kong

 The group of III-V semiconductors is emerging as highly attractive materials for a wide range of applications, particularly the gallium nitride family of alloys. Undoubtedly,… (more)

Subjects/Keywords: Gallium nitride.; Light emitting diodes.; Nanostructured materials.

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

李攜曦.; Li, K. (2013). Nanostructuring for nitride light-emitting diodes and opticalcavities. (Doctoral Dissertation). University of Hong Kong. Retrieved from Li, K. [李攜曦]. (2013). Nanostructuring for nitride light-emitting diodes and optical cavities. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5043439 ; http://dx.doi.org/10.5353/th_b5043439 ; http://hdl.handle.net/10722/184252

Chicago Manual of Style (16th Edition):

李攜曦.; Li, Kwai-hei. “Nanostructuring for nitride light-emitting diodes and opticalcavities.” 2013. Doctoral Dissertation, University of Hong Kong. Accessed December 10, 2019. Li, K. [李攜曦]. (2013). Nanostructuring for nitride light-emitting diodes and optical cavities. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5043439 ; http://dx.doi.org/10.5353/th_b5043439 ; http://hdl.handle.net/10722/184252.

MLA Handbook (7th Edition):

李攜曦.; Li, Kwai-hei. “Nanostructuring for nitride light-emitting diodes and opticalcavities.” 2013. Web. 10 Dec 2019.

Vancouver:

李攜曦.; Li K. Nanostructuring for nitride light-emitting diodes and opticalcavities. [Internet] [Doctoral dissertation]. University of Hong Kong; 2013. [cited 2019 Dec 10]. Available from: Li, K. [李攜曦]. (2013). Nanostructuring for nitride light-emitting diodes and optical cavities. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5043439 ; http://dx.doi.org/10.5353/th_b5043439 ; http://hdl.handle.net/10722/184252.

Council of Science Editors:

李攜曦.; Li K. Nanostructuring for nitride light-emitting diodes and opticalcavities. [Doctoral Dissertation]. University of Hong Kong; 2013. Available from: Li, K. [李攜曦]. (2013). Nanostructuring for nitride light-emitting diodes and optical cavities. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5043439 ; http://dx.doi.org/10.5353/th_b5043439 ; http://hdl.handle.net/10722/184252


University of Hong Kong

25. Bao, Wei. Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars.

Degree: M. Phil., 2012, University of Hong Kong

In this thesis, the carrier localization effect, the quantum confinement Stark effect (QCSE) and nonlinear optical properties of the as-grown InGaN/GaN multiple-quantum-wells (MQWs) structure and… (more)

Subjects/Keywords: Gallium nitride - Optical properties.; Quantum wells.; Photoluminescence.

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bao, W. (2012). Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars. (Masters Thesis). University of Hong Kong. Retrieved from Bao, W. [包伟]. (2012). Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5060580 ; http://dx.doi.org/10.5353/th_b5060580 ; http://hdl.handle.net/10722/188753

Chicago Manual of Style (16th Edition):

Bao, Wei. “Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars.” 2012. Masters Thesis, University of Hong Kong. Accessed December 10, 2019. Bao, W. [包伟]. (2012). Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5060580 ; http://dx.doi.org/10.5353/th_b5060580 ; http://hdl.handle.net/10722/188753.

MLA Handbook (7th Edition):

Bao, Wei. “Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars.” 2012. Web. 10 Dec 2019.

Vancouver:

Bao W. Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars. [Internet] [Masters thesis]. University of Hong Kong; 2012. [cited 2019 Dec 10]. Available from: Bao, W. [包伟]. (2012). Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5060580 ; http://dx.doi.org/10.5353/th_b5060580 ; http://hdl.handle.net/10722/188753.

Council of Science Editors:

Bao W. Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars. [Masters Thesis]. University of Hong Kong; 2012. Available from: Bao, W. [包伟]. (2012). Photoluminescence study of InGaN/GaN multiple-quantum-wells nanopillars. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5060580 ; http://dx.doi.org/10.5353/th_b5060580 ; http://hdl.handle.net/10722/188753


University of Manchester

26. Christian, George. Photoluminescence Studies of InGaN/GaN Quantum Well Structures.

Degree: 2018, University of Manchester

 In this thesis, optical studies of c-plane InGaN/GaN quantum well (QW) structures are presented. The effects of a Si-doped underlayer (UL) on the optical properties… (more)

Subjects/Keywords: photoluminescence; gallium nitride; nitrides; quantum well; semiconductor

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Christian, G. (2018). Photoluminescence Studies of InGaN/GaN Quantum Well Structures. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549

Chicago Manual of Style (16th Edition):

Christian, George. “Photoluminescence Studies of InGaN/GaN Quantum Well Structures.” 2018. Doctoral Dissertation, University of Manchester. Accessed December 10, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549.

MLA Handbook (7th Edition):

Christian, George. “Photoluminescence Studies of InGaN/GaN Quantum Well Structures.” 2018. Web. 10 Dec 2019.

Vancouver:

Christian G. Photoluminescence Studies of InGaN/GaN Quantum Well Structures. [Internet] [Doctoral dissertation]. University of Manchester; 2018. [cited 2019 Dec 10]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549.

Council of Science Editors:

Christian G. Photoluminescence Studies of InGaN/GaN Quantum Well Structures. [Doctoral Dissertation]. University of Manchester; 2018. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:317549


Rochester Institute of Technology

27. Hartensveld, Matthew. Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires.

Degree: MS, School of Chemistry and Materials Science (COS), 2018, Rochester Institute of Technology

  Nanowire devices are emerging as the replacement technology to planar devices, such as Light Emitting Diodes (LEDs) and Field Effect Transistors (FETs), due to… (more)

Subjects/Keywords: Etching; Gallium nitride; GaN; KOH; Nanowire; Nanowires

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hartensveld, M. (2018). Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/9835

Chicago Manual of Style (16th Edition):

Hartensveld, Matthew. “Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires.” 2018. Masters Thesis, Rochester Institute of Technology. Accessed December 10, 2019. https://scholarworks.rit.edu/theses/9835.

MLA Handbook (7th Edition):

Hartensveld, Matthew. “Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires.” 2018. Web. 10 Dec 2019.

Vancouver:

Hartensveld M. Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires. [Internet] [Masters thesis]. Rochester Institute of Technology; 2018. [cited 2019 Dec 10]. Available from: https://scholarworks.rit.edu/theses/9835.

Council of Science Editors:

Hartensveld M. Optimization of Dry and Wet GaN Etching to Form High Aspect Ratio Nanowires. [Masters Thesis]. Rochester Institute of Technology; 2018. Available from: https://scholarworks.rit.edu/theses/9835


King Abdullah University of Science and Technology

28. Ibrahim, Youssef H. Low Damage, High Anisotropy Inductively Coupled Plasma for Gallium Nitride based Devices.

Degree: 2013, King Abdullah University of Science and Technology

 Group III-nitride semiconductors possess unique properties, which make them versatile materials for suiting many applications. Structuring vertical and exceptionally smooth GaN profiles is crucial for… (more)

Subjects/Keywords: Gallium; Nitride; Inductively; Coupled; Plasma; Facets

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ibrahim, Y. H. (2013). Low Damage, High Anisotropy Inductively Coupled Plasma for Gallium Nitride based Devices. (Thesis). King Abdullah University of Science and Technology. Retrieved from http://hdl.handle.net/10754/292971

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ibrahim, Youssef H. “Low Damage, High Anisotropy Inductively Coupled Plasma for Gallium Nitride based Devices.” 2013. Thesis, King Abdullah University of Science and Technology. Accessed December 10, 2019. http://hdl.handle.net/10754/292971.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ibrahim, Youssef H. “Low Damage, High Anisotropy Inductively Coupled Plasma for Gallium Nitride based Devices.” 2013. Web. 10 Dec 2019.

Vancouver:

Ibrahim YH. Low Damage, High Anisotropy Inductively Coupled Plasma for Gallium Nitride based Devices. [Internet] [Thesis]. King Abdullah University of Science and Technology; 2013. [cited 2019 Dec 10]. Available from: http://hdl.handle.net/10754/292971.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ibrahim YH. Low Damage, High Anisotropy Inductively Coupled Plasma for Gallium Nitride based Devices. [Thesis]. King Abdullah University of Science and Technology; 2013. Available from: http://hdl.handle.net/10754/292971

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

29. Johansson, Linus. Evaluation of graphene as a transparent electrode in GaN-based LEDs by PECVD synthesis of graphene directly on GaN.

Degree: Physics, 2016, Umeå University

  A transparent conductive electrode (TCE) is an important component in many of our modern optoelectronic devices like photovoltaics, light emitting diodes and touch screens.… (more)

Subjects/Keywords: PECVD; graphene; transparent electrode; gallium nitride; LED

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Johansson, L. (2016). Evaluation of graphene as a transparent electrode in GaN-based LEDs by PECVD synthesis of graphene directly on GaN. (Thesis). Umeå University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-120731

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Johansson, Linus. “Evaluation of graphene as a transparent electrode in GaN-based LEDs by PECVD synthesis of graphene directly on GaN.” 2016. Thesis, Umeå University. Accessed December 10, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-120731.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Johansson, Linus. “Evaluation of graphene as a transparent electrode in GaN-based LEDs by PECVD synthesis of graphene directly on GaN.” 2016. Web. 10 Dec 2019.

Vancouver:

Johansson L. Evaluation of graphene as a transparent electrode in GaN-based LEDs by PECVD synthesis of graphene directly on GaN. [Internet] [Thesis]. Umeå University; 2016. [cited 2019 Dec 10]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-120731.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Johansson L. Evaluation of graphene as a transparent electrode in GaN-based LEDs by PECVD synthesis of graphene directly on GaN. [Thesis]. Umeå University; 2016. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:umu:diva-120731

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Tennessee – Knoxville

30. Bouler, Douglas Wayne, III. GAN-BASED POINT-OF-LOAD CONVERTERS FOR DATA CENTER APPLICATIONS.

Degree: MS, Electrical Engineering, 2018, University of Tennessee – Knoxville

 The growth of the information technology sector has increased demand for high-density, high-efficiency point-of-load (POL) converters. As industry continues to demand an increase in server… (more)

Subjects/Keywords: Gallium-Nitride; GaN; POL; power density

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bouler, Douglas Wayne, I. (2018). GAN-BASED POINT-OF-LOAD CONVERTERS FOR DATA CENTER APPLICATIONS. (Thesis). University of Tennessee – Knoxville. Retrieved from https://trace.tennessee.edu/utk_gradthes/5341

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bouler, Douglas Wayne, III. “GAN-BASED POINT-OF-LOAD CONVERTERS FOR DATA CENTER APPLICATIONS.” 2018. Thesis, University of Tennessee – Knoxville. Accessed December 10, 2019. https://trace.tennessee.edu/utk_gradthes/5341.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bouler, Douglas Wayne, III. “GAN-BASED POINT-OF-LOAD CONVERTERS FOR DATA CENTER APPLICATIONS.” 2018. Web. 10 Dec 2019.

Vancouver:

Bouler, Douglas Wayne I. GAN-BASED POINT-OF-LOAD CONVERTERS FOR DATA CENTER APPLICATIONS. [Internet] [Thesis]. University of Tennessee – Knoxville; 2018. [cited 2019 Dec 10]. Available from: https://trace.tennessee.edu/utk_gradthes/5341.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bouler, Douglas Wayne I. GAN-BASED POINT-OF-LOAD CONVERTERS FOR DATA CENTER APPLICATIONS. [Thesis]. University of Tennessee – Knoxville; 2018. Available from: https://trace.tennessee.edu/utk_gradthes/5341

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

[1] [2] [3] [4] [5] … [15]

.