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Brno University of Technology

1. Janovec, Jozef. Ab initio výpočty vlivu dopování na slitinu Ni2MnGa .

Degree: 2018, Brno University of Technology

Cieľom tejto práce je teoretické štúdium systému Ni-Mn-Ga, vykazujúceho efekt magnetickej tvarovej pamäti. Pri výpočtoch bola použitá metóda Exaktných Mufiin-Tin Orbitálov v kombinácii s aproximáciou koherentného potenciálu vrámci Korringa-Kohn-Rostoker formalizmu. Totálna energia bola spočítaná pomocou metódy úplnej nábojovej hustoty. Skúmaný bol vplyv dopovania zinkom alebo kadmiom na totálne energie pozdĺž tetragonálnej deformačnej dráhy a následne na teplotu martenzitickej premeny TM a Curieho teplotu TC. Taktiež boli skúmané nestechiometrické zliatiny prebytkom Mn na úkor Ga. Výsledky predikujú nárast TM po všetkých pozorovaných substitúciách v podmriežke Ga a pokles TM po substitúciách v podmriežke Mn. Curieho teplotu znižujú všetky študované substitúcie s výnimkou zmeny magnetického usporiadania v martensite nestechiometrickej zliatiny.; The subject of this work is theoretical study of Ni-Mn-Ga system, known due to the magnetic shape memory effect. Calculations were performed using the Exact Muffin-Tin Orbitals method in combination with the Coherent Potential Approximation within the Korringa-Kohn-Rostoker formalism. The total energy was calculated by Full Charge Density method. Effects of Zn or Cd dopings on total energies along the tetragonal deformation path and consequently on martensite transformation temperature TM and Curie temperature TC were examined. Off-stoichiometric alloys with excess of Mn at the expose of Ga were studied as well. The increase in TM for all cases of doping in Ga sublattice and the decrease in TM for both cases of doping in Mn sublattice were predicted. Regarding TC, all types of doping should decrease Curie temperature with an exception of magnetic transition in the off-stoichiometric martensite. Advisors/Committee Members: Zelený, Martin (advisor).

Subjects/Keywords: Magnetická tvarová pamäť; ab initio výpočty; Ni2MnGa; dopovanie; fázové transformácie; Magnetic shape memory; ab initio calculations; Ni2MnGa; doping; phase transformations

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Janovec, J. (2018). Ab initio výpočty vlivu dopování na slitinu Ni2MnGa . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/81377

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Janovec, Jozef. “Ab initio výpočty vlivu dopování na slitinu Ni2MnGa .” 2018. Thesis, Brno University of Technology. Accessed November 19, 2019. http://hdl.handle.net/11012/81377.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Janovec, Jozef. “Ab initio výpočty vlivu dopování na slitinu Ni2MnGa .” 2018. Web. 19 Nov 2019.

Vancouver:

Janovec J. Ab initio výpočty vlivu dopování na slitinu Ni2MnGa . [Internet] [Thesis]. Brno University of Technology; 2018. [cited 2019 Nov 19]. Available from: http://hdl.handle.net/11012/81377.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Janovec J. Ab initio výpočty vlivu dopování na slitinu Ni2MnGa . [Thesis]. Brno University of Technology; 2018. Available from: http://hdl.handle.net/11012/81377

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

2. Karlovský, Juraj. Příprava řezů vzorků a jejich analýza metodou SIMS .

Degree: 2018, Brno University of Technology

Táto práca sa zaoberá možnosťami štúdia polovodičových súčastok pomocou metódy SIMS s dôrazom na testovanie rôznych parametrov merania a rôznych spôsobov prípravy vzoriek. V rámci tejto práce bol navrhnutý a otestovaný držiak vzorky kompatibilný s používaným zariadením ToF-SIMS5 od spoločnosti IONTOF, ktorý je schopný nakláňať vzorky o definovaný uhol voči vodorovnej rovine. Tento držiak umožňuje opracovávanie vzoriek v hlavnej komore zariadenia ToF-SIMS5 bez nutnosti presunu vzorky medzi zariadeniami a držiakmi. Tento držiak bol použitý opracovaniu hrany vzorky TIGBT tranzistora a zobrazeniu hrany krátera predchádzajúceho merania. Na TIGBT tranzistoroch boli zobrazované vnútorné štruktúry preparované rôznymi spôsobmi. Ďalej boli optimalizované parametre merania tenckých vrstiev na molybdén-kremíkovom multivrstvovom Röntgenovom zrkadle a na indiových multivrstvách v GaN, kde bol pozorovaný vplyv teploty vzorky behom merania SIMS na výsledné hĺbkové proifly.; This thesis studies possible methods of semiconductor sample measurement by SIMS, with emphasis on testing different measurement parameters and sample preparation. Part of this master thesis deals with the design of a modified sample holder compatible with the used ToF-SIMS5 instrument, IONTOF company, which is capable of tilting the sample by defined angle. This holder enables sample preparation in the main chamber of the instrument without the need of transferring the sample between instruments, which limits the probability of sample contamination. This sample holder was tested by ion machining of TIGBT sample edge and by imaging of a crater edge, created in previous measurement. Edge termination structures prepared by different techniques were measured on the TIGBT samples. Further measurements with the goal of optimizing the depth resolution for thin layers were done on Molybdenum-Silicon-multilayer X-Ray Mirror. Part of the measurements was focused on comparing depth profiles measured at low temperatures. For these measurements the samples with Indium multilayers in GaN substrate were used. Advisors/Committee Members: Bábor, Petr (advisor).

Subjects/Keywords: SIMS; ToF; TIGBT; dopovanie; polovodič; UHV; multivrstva; rez; In-GaN kvantová jama; ión; hĺbkový profil; 3D hĺbkový profil; SIMS; ToF; TIGBT; doping; semiconductor; UHV; multilayer; cross section; In-GaN quantum well; ion; depth profile; 3D depth profile

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Karlovský, J. (2018). Příprava řezů vzorků a jejich analýza metodou SIMS . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/83339

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Karlovský, Juraj. “Příprava řezů vzorků a jejich analýza metodou SIMS .” 2018. Thesis, Brno University of Technology. Accessed November 19, 2019. http://hdl.handle.net/11012/83339.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Karlovský, Juraj. “Příprava řezů vzorků a jejich analýza metodou SIMS .” 2018. Web. 19 Nov 2019.

Vancouver:

Karlovský J. Příprava řezů vzorků a jejich analýza metodou SIMS . [Internet] [Thesis]. Brno University of Technology; 2018. [cited 2019 Nov 19]. Available from: http://hdl.handle.net/11012/83339.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Karlovský J. Příprava řezů vzorků a jejich analýza metodou SIMS . [Thesis]. Brno University of Technology; 2018. Available from: http://hdl.handle.net/11012/83339

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

.