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You searched for subject:( TRANSISTORS). Showing records 1 – 30 of 1206 total matches.

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Oregon State University

1. Cheung, David Kin-Poon. Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors.

Degree: MS, Electrical and Electronics Engineering, 1967, Oregon State University

 Four methods for the simultaneous fabrication of field-effect and bipolar transistors have been investigated. The basic process involves obtaining two different junction depths by a… (more)

Subjects/Keywords: Transistors

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APA (6th Edition):

Cheung, D. K. (1967). Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/47002

Chicago Manual of Style (16th Edition):

Cheung, David Kin-Poon. “Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors.” 1967. Masters Thesis, Oregon State University. Accessed October 21, 2019. http://hdl.handle.net/1957/47002.

MLA Handbook (7th Edition):

Cheung, David Kin-Poon. “Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors.” 1967. Web. 21 Oct 2019.

Vancouver:

Cheung DK. Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors. [Internet] [Masters thesis]. Oregon State University; 1967. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/1957/47002.

Council of Science Editors:

Cheung DK. Compatible field-effect and bipolar transistors: Field-effect and bipolar transistors. [Masters Thesis]. Oregon State University; 1967. Available from: http://hdl.handle.net/1957/47002


Oregon State University

2. Khanna, Satya Pal. The concentration profile of diffused radio-active antimony in a silicon-dioxide layer.

Degree: MS, Electrical Engineering, 1963, Oregon State University

 The selective masking effect of a thermally grown layer of silicon dioxide has been widely utilized as a technique for controlling the geometry and impurity… (more)

Subjects/Keywords: Transistors

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APA (6th Edition):

Khanna, S. P. (1963). The concentration profile of diffused radio-active antimony in a silicon-dioxide layer. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/48816

Chicago Manual of Style (16th Edition):

Khanna, Satya Pal. “The concentration profile of diffused radio-active antimony in a silicon-dioxide layer.” 1963. Masters Thesis, Oregon State University. Accessed October 21, 2019. http://hdl.handle.net/1957/48816.

MLA Handbook (7th Edition):

Khanna, Satya Pal. “The concentration profile of diffused radio-active antimony in a silicon-dioxide layer.” 1963. Web. 21 Oct 2019.

Vancouver:

Khanna SP. The concentration profile of diffused radio-active antimony in a silicon-dioxide layer. [Internet] [Masters thesis]. Oregon State University; 1963. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/1957/48816.

Council of Science Editors:

Khanna SP. The concentration profile of diffused radio-active antimony in a silicon-dioxide layer. [Masters Thesis]. Oregon State University; 1963. Available from: http://hdl.handle.net/1957/48816


Oregon State University

3. Richardson, Dennis W. Predicting transistor switching time.

Degree: MS, Electrical Engineering, 1963, Oregon State University

 This thesis is a development of two sets of equations predicting the switching times of a saturated transistor. The first set of equations defines the… (more)

Subjects/Keywords: Transistors

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APA (6th Edition):

Richardson, D. W. (1963). Predicting transistor switching time. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/48721

Chicago Manual of Style (16th Edition):

Richardson, Dennis W. “Predicting transistor switching time.” 1963. Masters Thesis, Oregon State University. Accessed October 21, 2019. http://hdl.handle.net/1957/48721.

MLA Handbook (7th Edition):

Richardson, Dennis W. “Predicting transistor switching time.” 1963. Web. 21 Oct 2019.

Vancouver:

Richardson DW. Predicting transistor switching time. [Internet] [Masters thesis]. Oregon State University; 1963. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/1957/48721.

Council of Science Editors:

Richardson DW. Predicting transistor switching time. [Masters Thesis]. Oregon State University; 1963. Available from: http://hdl.handle.net/1957/48721


Oregon State University

4. Ballieu, Howard Lee. The binistor as an electronic switching element.

Degree: MS, Electrical Engineering, 1961, Oregon State University

Subjects/Keywords: Transistors

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APA (6th Edition):

Ballieu, H. L. (1961). The binistor as an electronic switching element. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/49347

Chicago Manual of Style (16th Edition):

Ballieu, Howard Lee. “The binistor as an electronic switching element.” 1961. Masters Thesis, Oregon State University. Accessed October 21, 2019. http://hdl.handle.net/1957/49347.

MLA Handbook (7th Edition):

Ballieu, Howard Lee. “The binistor as an electronic switching element.” 1961. Web. 21 Oct 2019.

Vancouver:

Ballieu HL. The binistor as an electronic switching element. [Internet] [Masters thesis]. Oregon State University; 1961. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/1957/49347.

Council of Science Editors:

Ballieu HL. The binistor as an electronic switching element. [Masters Thesis]. Oregon State University; 1961. Available from: http://hdl.handle.net/1957/49347


Oregon State University

5. Smith, Roy John. The protection of semiconductor devices from electrical transients.

Degree: MS, Electrical Engineering, 1962, Oregon State University

Subjects/Keywords: Transistors

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APA (6th Edition):

Smith, R. J. (1962). The protection of semiconductor devices from electrical transients. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/49973

Chicago Manual of Style (16th Edition):

Smith, Roy John. “The protection of semiconductor devices from electrical transients.” 1962. Masters Thesis, Oregon State University. Accessed October 21, 2019. http://hdl.handle.net/1957/49973.

MLA Handbook (7th Edition):

Smith, Roy John. “The protection of semiconductor devices from electrical transients.” 1962. Web. 21 Oct 2019.

Vancouver:

Smith RJ. The protection of semiconductor devices from electrical transients. [Internet] [Masters thesis]. Oregon State University; 1962. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/1957/49973.

Council of Science Editors:

Smith RJ. The protection of semiconductor devices from electrical transients. [Masters Thesis]. Oregon State University; 1962. Available from: http://hdl.handle.net/1957/49973


Oregon State University

6. Tao, David Ming-Shih. A complementary MOS random-access-memory cell wth double-diffused MOS transistors.

Degree: PhD, Electrical and Electronics Engineering, 1972, Oregon State University

 The use of double-diffused n-type MOS transistor (DN-MOS) in a complementary MOS random-access-memory (CMOS RAM) cell is the main objective of this investigation. DN-MOS transistors(more)

Subjects/Keywords: Transistors

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APA (6th Edition):

Tao, D. M. (1972). A complementary MOS random-access-memory cell wth double-diffused MOS transistors. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/44800

Chicago Manual of Style (16th Edition):

Tao, David Ming-Shih. “A complementary MOS random-access-memory cell wth double-diffused MOS transistors.” 1972. Doctoral Dissertation, Oregon State University. Accessed October 21, 2019. http://hdl.handle.net/1957/44800.

MLA Handbook (7th Edition):

Tao, David Ming-Shih. “A complementary MOS random-access-memory cell wth double-diffused MOS transistors.” 1972. Web. 21 Oct 2019.

Vancouver:

Tao DM. A complementary MOS random-access-memory cell wth double-diffused MOS transistors. [Internet] [Doctoral dissertation]. Oregon State University; 1972. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/1957/44800.

Council of Science Editors:

Tao DM. A complementary MOS random-access-memory cell wth double-diffused MOS transistors. [Doctoral Dissertation]. Oregon State University; 1972. Available from: http://hdl.handle.net/1957/44800


Oregon State University

7. Limvorapun, Thawee. The MOS tetrode transistor.

Degree: MS, Electrical and Electronics Engineering, 1972, Oregon State University

 The MOS tetrode transistor is studied in this project. This device is ideally suited for high frequency and switching application. In effect it is the… (more)

Subjects/Keywords: Transistors

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APA (6th Edition):

Limvorapun, T. (1972). The MOS tetrode transistor. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/45372

Chicago Manual of Style (16th Edition):

Limvorapun, Thawee. “The MOS tetrode transistor.” 1972. Masters Thesis, Oregon State University. Accessed October 21, 2019. http://hdl.handle.net/1957/45372.

MLA Handbook (7th Edition):

Limvorapun, Thawee. “The MOS tetrode transistor.” 1972. Web. 21 Oct 2019.

Vancouver:

Limvorapun T. The MOS tetrode transistor. [Internet] [Masters thesis]. Oregon State University; 1972. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/1957/45372.

Council of Science Editors:

Limvorapun T. The MOS tetrode transistor. [Masters Thesis]. Oregon State University; 1972. Available from: http://hdl.handle.net/1957/45372


Oregon State University

8. Hwang, Yun-sheng. Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors.

Degree: MS, Electrical and Electronics Engineering, 1970, Oregon State University

 The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices made with single-layer aluminum-oxide films and double-layer films which were made by… (more)

Subjects/Keywords: Transistors

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APA (6th Edition):

Hwang, Y. (1970). Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/45752

Chicago Manual of Style (16th Edition):

Hwang, Yun-sheng. “Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors.” 1970. Masters Thesis, Oregon State University. Accessed October 21, 2019. http://hdl.handle.net/1957/45752.

MLA Handbook (7th Edition):

Hwang, Yun-sheng. “Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors.” 1970. Web. 21 Oct 2019.

Vancouver:

Hwang Y. Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors. [Internet] [Masters thesis]. Oregon State University; 1970. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/1957/45752.

Council of Science Editors:

Hwang Y. Vacuum-deposited aluminum-oxide MOS transistors: MOS transistors. [Masters Thesis]. Oregon State University; 1970. Available from: http://hdl.handle.net/1957/45752


Oregon State University

9. Chou, Pen Chao. A MOS-transistor with submicron, and graded channel.

Degree: PhD, Electrical and Electronics Engineering, 1971, Oregon State University

 The theoretical aspects and fabrication techniques of a new surface field-effect transistor were investigated. The new MOS-transistor uses a three-layer structure similar to those found… (more)

Subjects/Keywords: Transistors

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APA (6th Edition):

Chou, P. C. (1971). A MOS-transistor with submicron, and graded channel. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/46003

Chicago Manual of Style (16th Edition):

Chou, Pen Chao. “A MOS-transistor with submicron, and graded channel.” 1971. Doctoral Dissertation, Oregon State University. Accessed October 21, 2019. http://hdl.handle.net/1957/46003.

MLA Handbook (7th Edition):

Chou, Pen Chao. “A MOS-transistor with submicron, and graded channel.” 1971. Web. 21 Oct 2019.

Vancouver:

Chou PC. A MOS-transistor with submicron, and graded channel. [Internet] [Doctoral dissertation]. Oregon State University; 1971. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/1957/46003.

Council of Science Editors:

Chou PC. A MOS-transistor with submicron, and graded channel. [Doctoral Dissertation]. Oregon State University; 1971. Available from: http://hdl.handle.net/1957/46003


Oregon State University

10. Delzer, Dennis Richard. Vacuum evaporated dielectrics in MOS structures.

Degree: PhD, Electrical and Electronics Engineering, 1968, Oregon State University

 Vacuum evaporated dielectrics for use in MOS structures were studied in this research project. Dielectric films were deposited on substrates by electron bombardment evaporation of… (more)

Subjects/Keywords: Transistors

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APA (6th Edition):

Delzer, D. R. (1968). Vacuum evaporated dielectrics in MOS structures. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/46875

Chicago Manual of Style (16th Edition):

Delzer, Dennis Richard. “Vacuum evaporated dielectrics in MOS structures.” 1968. Doctoral Dissertation, Oregon State University. Accessed October 21, 2019. http://hdl.handle.net/1957/46875.

MLA Handbook (7th Edition):

Delzer, Dennis Richard. “Vacuum evaporated dielectrics in MOS structures.” 1968. Web. 21 Oct 2019.

Vancouver:

Delzer DR. Vacuum evaporated dielectrics in MOS structures. [Internet] [Doctoral dissertation]. Oregon State University; 1968. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/1957/46875.

Council of Science Editors:

Delzer DR. Vacuum evaporated dielectrics in MOS structures. [Doctoral Dissertation]. Oregon State University; 1968. Available from: http://hdl.handle.net/1957/46875


Rochester Institute of Technology

11. Mauersberg, Diane. Rapid thermal processing of polysilicon emitter transistors.

Degree: Electrical Engineering, 1994, Rochester Institute of Technology

 The recent developments in rapid thermal processing in the past several years have shown it to have much potential in achieving full dopant activation of… (more)

Subjects/Keywords: Transistors

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APA (6th Edition):

Mauersberg, D. (1994). Rapid thermal processing of polysilicon emitter transistors. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/5603

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mauersberg, Diane. “Rapid thermal processing of polysilicon emitter transistors.” 1994. Thesis, Rochester Institute of Technology. Accessed October 21, 2019. https://scholarworks.rit.edu/theses/5603.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mauersberg, Diane. “Rapid thermal processing of polysilicon emitter transistors.” 1994. Web. 21 Oct 2019.

Vancouver:

Mauersberg D. Rapid thermal processing of polysilicon emitter transistors. [Internet] [Thesis]. Rochester Institute of Technology; 1994. [cited 2019 Oct 21]. Available from: https://scholarworks.rit.edu/theses/5603.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mauersberg D. Rapid thermal processing of polysilicon emitter transistors. [Thesis]. Rochester Institute of Technology; 1994. Available from: https://scholarworks.rit.edu/theses/5603

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of British Columbia

12. Cameron, Frank Charles. Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier .

Degree: 1962, University of British Columbia

 Bruun and Grinich have previously described video amplifier designs using resistance-capacitance feedback in the emitter lead for stages in the common-emitter configuration. Diffusion-type alloy-junction transistors(more)

Subjects/Keywords: Transistors

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APA (6th Edition):

Cameron, F. C. (1962). Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/39615

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Cameron, Frank Charles. “Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier .” 1962. Thesis, University of British Columbia. Accessed October 21, 2019. http://hdl.handle.net/2429/39615.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Cameron, Frank Charles. “Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier .” 1962. Web. 21 Oct 2019.

Vancouver:

Cameron FC. Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier . [Internet] [Thesis]. University of British Columbia; 1962. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/2429/39615.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Cameron FC. Iterative synthesis of a flat-staggered emitter-feedback transistor video amplifier . [Thesis]. University of British Columbia; 1962. Available from: http://hdl.handle.net/2429/39615

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of British Columbia

13. Hatton, Walter Lewis. Noise figure of the transistor amplifier .

Degree: 1951, University of British Columbia

 The noise figure of the transistor amplifier is of special interest since the large quantity of excess noise present limits the usefulness of the transistor… (more)

Subjects/Keywords: Transistors

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APA (6th Edition):

Hatton, W. L. (1951). Noise figure of the transistor amplifier . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/40899

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hatton, Walter Lewis. “Noise figure of the transistor amplifier .” 1951. Thesis, University of British Columbia. Accessed October 21, 2019. http://hdl.handle.net/2429/40899.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hatton, Walter Lewis. “Noise figure of the transistor amplifier .” 1951. Web. 21 Oct 2019.

Vancouver:

Hatton WL. Noise figure of the transistor amplifier . [Internet] [Thesis]. University of British Columbia; 1951. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/2429/40899.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hatton WL. Noise figure of the transistor amplifier . [Thesis]. University of British Columbia; 1951. Available from: http://hdl.handle.net/2429/40899

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Michigan State University

14. ElSherif, Helmy Hassan. Transistor large signal analysis.

Degree: PhD, Department of Electrical Engineering, 1964, Michigan State University

Subjects/Keywords: Transistors

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APA (6th Edition):

ElSherif, H. H. (1964). Transistor large signal analysis. (Doctoral Dissertation). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:39847

Chicago Manual of Style (16th Edition):

ElSherif, Helmy Hassan. “Transistor large signal analysis.” 1964. Doctoral Dissertation, Michigan State University. Accessed October 21, 2019. http://etd.lib.msu.edu/islandora/object/etd:39847.

MLA Handbook (7th Edition):

ElSherif, Helmy Hassan. “Transistor large signal analysis.” 1964. Web. 21 Oct 2019.

Vancouver:

ElSherif HH. Transistor large signal analysis. [Internet] [Doctoral dissertation]. Michigan State University; 1964. [cited 2019 Oct 21]. Available from: http://etd.lib.msu.edu/islandora/object/etd:39847.

Council of Science Editors:

ElSherif HH. Transistor large signal analysis. [Doctoral Dissertation]. Michigan State University; 1964. Available from: http://etd.lib.msu.edu/islandora/object/etd:39847


University of Arizona

15. Nygaard, Paul Andrew, 1940-. Models of the drift transistor .

Degree: 1964, University of Arizona

Subjects/Keywords: Transistors.

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APA (6th Edition):

Nygaard, Paul Andrew, 1. (1964). Models of the drift transistor . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/319533

Chicago Manual of Style (16th Edition):

Nygaard, Paul Andrew, 1940-. “Models of the drift transistor .” 1964. Masters Thesis, University of Arizona. Accessed October 21, 2019. http://hdl.handle.net/10150/319533.

MLA Handbook (7th Edition):

Nygaard, Paul Andrew, 1940-. “Models of the drift transistor .” 1964. Web. 21 Oct 2019.

Vancouver:

Nygaard, Paul Andrew 1. Models of the drift transistor . [Internet] [Masters thesis]. University of Arizona; 1964. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10150/319533.

Council of Science Editors:

Nygaard, Paul Andrew 1. Models of the drift transistor . [Masters Thesis]. University of Arizona; 1964. Available from: http://hdl.handle.net/10150/319533


University of Arizona

16. Latorre, Victor Robert, 1931-. Frequency variations of transistor parameters .

Degree: 1956, University of Arizona

Subjects/Keywords: Transistors.

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APA (6th Edition):

Latorre, Victor Robert, 1. (1956). Frequency variations of transistor parameters . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/319587

Chicago Manual of Style (16th Edition):

Latorre, Victor Robert, 1931-. “Frequency variations of transistor parameters .” 1956. Masters Thesis, University of Arizona. Accessed October 21, 2019. http://hdl.handle.net/10150/319587.

MLA Handbook (7th Edition):

Latorre, Victor Robert, 1931-. “Frequency variations of transistor parameters .” 1956. Web. 21 Oct 2019.

Vancouver:

Latorre, Victor Robert 1. Frequency variations of transistor parameters . [Internet] [Masters thesis]. University of Arizona; 1956. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10150/319587.

Council of Science Editors:

Latorre, Victor Robert 1. Frequency variations of transistor parameters . [Masters Thesis]. University of Arizona; 1956. Available from: http://hdl.handle.net/10150/319587


Michigan State University

17. Singh, Skuhbir, 1936-. Current saturation mechanism in field-effect transistors.

Degree: PhD, Department of Electrical Engineering and Systems Science, 1970, Michigan State University

Subjects/Keywords: Transistors

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APA (6th Edition):

Singh, Skuhbir, 1. (1970). Current saturation mechanism in field-effect transistors. (Doctoral Dissertation). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:36927

Chicago Manual of Style (16th Edition):

Singh, Skuhbir, 1936-. “Current saturation mechanism in field-effect transistors.” 1970. Doctoral Dissertation, Michigan State University. Accessed October 21, 2019. http://etd.lib.msu.edu/islandora/object/etd:36927.

MLA Handbook (7th Edition):

Singh, Skuhbir, 1936-. “Current saturation mechanism in field-effect transistors.” 1970. Web. 21 Oct 2019.

Vancouver:

Singh, Skuhbir 1. Current saturation mechanism in field-effect transistors. [Internet] [Doctoral dissertation]. Michigan State University; 1970. [cited 2019 Oct 21]. Available from: http://etd.lib.msu.edu/islandora/object/etd:36927.

Council of Science Editors:

Singh, Skuhbir 1. Current saturation mechanism in field-effect transistors. [Doctoral Dissertation]. Michigan State University; 1970. Available from: http://etd.lib.msu.edu/islandora/object/etd:36927


Oregon State University

18. Gorecki, Jenna Y. Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors.

Degree: MS, Chemical Engineering, 2016, Oregon State University

 Inkjet-printed p-type copper(I) iodide-based TFTs were successfully fabricated. As-printed copper(I) halide semiconductor films, such as CuI, CuBrI, and CuClI, were used as p-type active channel… (more)

Subjects/Keywords: Thin-Film Transistors; Thin film transistors

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APA (6th Edition):

Gorecki, J. Y. (2016). Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/59314

Chicago Manual of Style (16th Edition):

Gorecki, Jenna Y. “Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors.” 2016. Masters Thesis, Oregon State University. Accessed October 21, 2019. http://hdl.handle.net/1957/59314.

MLA Handbook (7th Edition):

Gorecki, Jenna Y. “Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors.” 2016. Web. 21 Oct 2019.

Vancouver:

Gorecki JY. Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors. [Internet] [Masters thesis]. Oregon State University; 2016. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/1957/59314.

Council of Science Editors:

Gorecki JY. Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors. [Masters Thesis]. Oregon State University; 2016. Available from: http://hdl.handle.net/1957/59314

19. Fournier, David. Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz.

Degree: Docteur es, Micro-Nanotechnologie, Acoustique et Télécommunication, 2010, Université Lille I – Sciences et Technologies

Le marché des amplificateurs de puissance pour les combinés téléphoniques portables est actuellement dominé par les semi-conducteurs III-V, les transistors HBT et PHEMT GaAs étant… (more)

Subjects/Keywords: Transistors LDMOS; Transistors à grille métallique

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APA (6th Edition):

Fournier, D. (2010). Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz. (Doctoral Dissertation). Université Lille I – Sciences et Technologies. Retrieved from http://www.theses.fr/2010LIL10045

Chicago Manual of Style (16th Edition):

Fournier, David. “Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz.” 2010. Doctoral Dissertation, Université Lille I – Sciences et Technologies. Accessed October 21, 2019. http://www.theses.fr/2010LIL10045.

MLA Handbook (7th Edition):

Fournier, David. “Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz.” 2010. Web. 21 Oct 2019.

Vancouver:

Fournier D. Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz. [Internet] [Doctoral dissertation]. Université Lille I – Sciences et Technologies; 2010. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2010LIL10045.

Council of Science Editors:

Fournier D. Développement et étude de composants RF-LDMOS pour l’amplification micro-onde de puissance au-delà de 2 GHz : Development and study of RF-LDMOS devices for microwave power amplification beyond 2 GHz. [Doctoral Dissertation]. Université Lille I – Sciences et Technologies; 2010. Available from: http://www.theses.fr/2010LIL10045


University of Johannesburg

20. Prest, Rory Bruce. Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits.

Degree: 2014, University of Johannesburg

D.Ing. (Electrical & Electronic Engineering )

In recent years, bipolar transistors have become available with large current ratings (300A-1DODA). The purpose 01 this study is… (more)

Subjects/Keywords: Bipolar transistors; Bipolar integrated circuits; Junction transistors

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APA (6th Edition):

Prest, R. B. (2014). Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits. (Thesis). University of Johannesburg. Retrieved from http://hdl.handle.net/10210/9511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Prest, Rory Bruce. “Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits.” 2014. Thesis, University of Johannesburg. Accessed October 21, 2019. http://hdl.handle.net/10210/9511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Prest, Rory Bruce. “Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits.” 2014. Web. 21 Oct 2019.

Vancouver:

Prest RB. Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits. [Internet] [Thesis]. University of Johannesburg; 2014. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10210/9511.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Prest RB. Device based modelling of high current bipolar transistors for the detailed simulation of converter circuits. [Thesis]. University of Johannesburg; 2014. Available from: http://hdl.handle.net/10210/9511

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

21. Shirinskaya, Anna. Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques.

Degree: Docteur es, Chimie, 2017, Paris Saclay

Les Transistors Organiques Electrochimiques (OECT) sont largement utilisés comme les capteurs dans de nombreux appareils bioélectroniques. Bien qu’ils aient été largement étudiés au cours de… (more)

Subjects/Keywords: Physics; Transistors; Organic; Physics; Transistors; Organic

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APA (6th Edition):

Shirinskaya, A. (2017). Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques. (Doctoral Dissertation). Paris Saclay. Retrieved from http://www.theses.fr/2017SACLX055

Chicago Manual of Style (16th Edition):

Shirinskaya, Anna. “Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques.” 2017. Doctoral Dissertation, Paris Saclay. Accessed October 21, 2019. http://www.theses.fr/2017SACLX055.

MLA Handbook (7th Edition):

Shirinskaya, Anna. “Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques.” 2017. Web. 21 Oct 2019.

Vancouver:

Shirinskaya A. Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques. [Internet] [Doctoral dissertation]. Paris Saclay; 2017. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2017SACLX055.

Council of Science Editors:

Shirinskaya A. Physical modelling of bio sensors based on Organic Electrochemical Transistors : Modélisation physique des biocapteurs au base des transistors électrochimiques. [Doctoral Dissertation]. Paris Saclay; 2017. Available from: http://www.theses.fr/2017SACLX055


Michigan State University

22. Sun, Chih-Chieh Jack. A noise study of bipolar junction transistor reliability.

Degree: PhD, Department of Electrical Engineering, 1993, Michigan State University

Subjects/Keywords: Transistors; Bipolar transistors

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APA (6th Edition):

Sun, C. J. (1993). A noise study of bipolar junction transistor reliability. (Doctoral Dissertation). Michigan State University. Retrieved from http://etd.lib.msu.edu/islandora/object/etd:22579

Chicago Manual of Style (16th Edition):

Sun, Chih-Chieh Jack. “A noise study of bipolar junction transistor reliability.” 1993. Doctoral Dissertation, Michigan State University. Accessed October 21, 2019. http://etd.lib.msu.edu/islandora/object/etd:22579.

MLA Handbook (7th Edition):

Sun, Chih-Chieh Jack. “A noise study of bipolar junction transistor reliability.” 1993. Web. 21 Oct 2019.

Vancouver:

Sun CJ. A noise study of bipolar junction transistor reliability. [Internet] [Doctoral dissertation]. Michigan State University; 1993. [cited 2019 Oct 21]. Available from: http://etd.lib.msu.edu/islandora/object/etd:22579.

Council of Science Editors:

Sun CJ. A noise study of bipolar junction transistor reliability. [Doctoral Dissertation]. Michigan State University; 1993. Available from: http://etd.lib.msu.edu/islandora/object/etd:22579


University of Hong Kong

23. 杨真一; Yang, Zhenyi. A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor.

Degree: PhD, 2016, University of Hong Kong

 Due to the high demand of magnetic sensors in the market nowadays, CMOS magnetic sensor sectorial SD-MAGFETs become widely used because of their compact size… (more)

Subjects/Keywords: Field-effect transistors

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APA (6th Edition):

杨真一; Yang, Z. (2016). A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor. (Doctoral Dissertation). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/239375

Chicago Manual of Style (16th Edition):

杨真一; Yang, Zhenyi. “A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor.” 2016. Doctoral Dissertation, University of Hong Kong. Accessed October 21, 2019. http://hdl.handle.net/10722/239375.

MLA Handbook (7th Edition):

杨真一; Yang, Zhenyi. “A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor.” 2016. Web. 21 Oct 2019.

Vancouver:

杨真一; Yang Z. A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor. [Internet] [Doctoral dissertation]. University of Hong Kong; 2016. [cited 2019 Oct 21]. Available from: http://hdl.handle.net/10722/239375.

Council of Science Editors:

杨真一; Yang Z. A study on the magnetic sensitivity of sectorial split-drain magnetic field-effect transistor. [Doctoral Dissertation]. University of Hong Kong; 2016. Available from: http://hdl.handle.net/10722/239375


University of Hong Kong

24. Siu, Sik-lam. Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application.

Degree: M. Phil., 2015, University of Hong Kong

 Magnetic sensors have a wide range of applications in proximity sensing, position sensing, etc. Once a magnetic field is present, or there is a change… (more)

Subjects/Keywords: Field-effect transistors

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APA (6th Edition):

Siu, S. (2015). Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. (Masters Thesis). University of Hong Kong. Retrieved from Siu, S. [蕭錫霖]. (2015). Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5689306 ; http://dx.doi.org/10.5353/th_b5689306 ; http://hdl.handle.net/10722/222371

Chicago Manual of Style (16th Edition):

Siu, Sik-lam. “Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application.” 2015. Masters Thesis, University of Hong Kong. Accessed October 21, 2019. Siu, S. [蕭錫霖]. (2015). Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5689306 ; http://dx.doi.org/10.5353/th_b5689306 ; http://hdl.handle.net/10722/222371.

MLA Handbook (7th Edition):

Siu, Sik-lam. “Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application.” 2015. Web. 21 Oct 2019.

Vancouver:

Siu S. Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. [Internet] [Masters thesis]. University of Hong Kong; 2015. [cited 2019 Oct 21]. Available from: Siu, S. [蕭錫霖]. (2015). Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5689306 ; http://dx.doi.org/10.5353/th_b5689306 ; http://hdl.handle.net/10722/222371.

Council of Science Editors:

Siu S. Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. [Masters Thesis]. University of Hong Kong; 2015. Available from: Siu, S. [蕭錫霖]. (2015). Magnetic field sensing behaviour of sectorial split drain field effect transistor in mechatronic application. (Thesis). University of Hong Kong, Pokfulam, Hong Kong SAR. Retrieved from http://dx.doi.org/10.5353/th_b5689306 ; http://dx.doi.org/10.5353/th_b5689306 ; http://hdl.handle.net/10722/222371


Rochester Institute of Technology

25. Anderson, Jackson D. Measurement of Ferroelectric Films in MFM and MFIS Structures.

Degree: MS, Microelectronic Engineering, 2017, Rochester Institute of Technology

  For many years ferroelectric memory has been used in applications requiring low power, yet mainstream adoption has been stifled due to integration and scaling… (more)

Subjects/Keywords: Capacitors; Ferroelectric; Transistors

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APA (6th Edition):

Anderson, J. D. (2017). Measurement of Ferroelectric Films in MFM and MFIS Structures. (Masters Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/9547

Chicago Manual of Style (16th Edition):

Anderson, Jackson D. “Measurement of Ferroelectric Films in MFM and MFIS Structures.” 2017. Masters Thesis, Rochester Institute of Technology. Accessed October 21, 2019. https://scholarworks.rit.edu/theses/9547.

MLA Handbook (7th Edition):

Anderson, Jackson D. “Measurement of Ferroelectric Films in MFM and MFIS Structures.” 2017. Web. 21 Oct 2019.

Vancouver:

Anderson JD. Measurement of Ferroelectric Films in MFM and MFIS Structures. [Internet] [Masters thesis]. Rochester Institute of Technology; 2017. [cited 2019 Oct 21]. Available from: https://scholarworks.rit.edu/theses/9547.

Council of Science Editors:

Anderson JD. Measurement of Ferroelectric Films in MFM and MFIS Structures. [Masters Thesis]. Rochester Institute of Technology; 2017. Available from: https://scholarworks.rit.edu/theses/9547


University of Notre Dame

26. Hubert C George. Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>.

Degree: PhD, Electrical Engineering, 2011, University of Notre Dame

  Significant attention has been given to the so-called “blinking dot” phenomenon, which describes the fluorescence intermittency exhibited by a wide variety of nanoscale objects… (more)

Subjects/Keywords: Single Electron Transistors

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APA (6th Edition):

George, H. C. (2011). Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>. (Doctoral Dissertation). University of Notre Dame. Retrieved from https://curate.nd.edu/show/xw42n586g72

Chicago Manual of Style (16th Edition):

George, Hubert C. “Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>.” 2011. Doctoral Dissertation, University of Notre Dame. Accessed October 21, 2019. https://curate.nd.edu/show/xw42n586g72.

MLA Handbook (7th Edition):

George, Hubert C. “Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>.” 2011. Web. 21 Oct 2019.

Vancouver:

George HC. Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>. [Internet] [Doctoral dissertation]. University of Notre Dame; 2011. [cited 2019 Oct 21]. Available from: https://curate.nd.edu/show/xw42n586g72.

Council of Science Editors:

George HC. Studies of Light Illumination and Substrate Material Effects on Aluminum Single Electron Transistors: Towards an Understanding of Background Charge</h1>. [Doctoral Dissertation]. University of Notre Dame; 2011. Available from: https://curate.nd.edu/show/xw42n586g72


Université de Grenoble

27. Tachi, Kiichi. Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures.

Degree: Docteur es, Micro et nanoélectronique, 2011, Université de Grenoble

Il a été démontré que la structure gate-all-around en nanofils de silicium peut radicalement supprimer les effets de canaux courts. De plus, l'introduction d'espaceurs internes… (more)

Subjects/Keywords: Transistors CMOS; Transistor nanofils; Mobilité; Intégration 3D; CMOS transistors; Nanowire transistors; Mobility; 3D integration; 620

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APA (6th Edition):

Tachi, K. (2011). Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures. (Doctoral Dissertation). Université de Grenoble. Retrieved from http://www.theses.fr/2011GRENT084

Chicago Manual of Style (16th Edition):

Tachi, Kiichi. “Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures.” 2011. Doctoral Dissertation, Université de Grenoble. Accessed October 21, 2019. http://www.theses.fr/2011GRENT084.

MLA Handbook (7th Edition):

Tachi, Kiichi. “Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures.” 2011. Web. 21 Oct 2019.

Vancouver:

Tachi K. Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures. [Internet] [Doctoral dissertation]. Université de Grenoble; 2011. [cited 2019 Oct 21]. Available from: http://www.theses.fr/2011GRENT084.

Council of Science Editors:

Tachi K. Etude physique et technologique d'architectures de transistors MOS à nanofils : Technological and physical study of etched nanowire transistors architectures. [Doctoral Dissertation]. Université de Grenoble; 2011. Available from: http://www.theses.fr/2011GRENT084


The Ohio State University

28. Meyer, David D. Two-dimensional numerical analysis of semiconductor devices : application to bipolar transistors.

Degree: PhD, Graduate School, 1972, The Ohio State University

Subjects/Keywords: Engineering; Transistors

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APA (6th Edition):

Meyer, D. D. (1972). Two-dimensional numerical analysis of semiconductor devices : application to bipolar transistors. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1486739553810642

Chicago Manual of Style (16th Edition):

Meyer, David D. “Two-dimensional numerical analysis of semiconductor devices : application to bipolar transistors.” 1972. Doctoral Dissertation, The Ohio State University. Accessed October 21, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1486739553810642.

MLA Handbook (7th Edition):

Meyer, David D. “Two-dimensional numerical analysis of semiconductor devices : application to bipolar transistors.” 1972. Web. 21 Oct 2019.

Vancouver:

Meyer DD. Two-dimensional numerical analysis of semiconductor devices : application to bipolar transistors. [Internet] [Doctoral dissertation]. The Ohio State University; 1972. [cited 2019 Oct 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486739553810642.

Council of Science Editors:

Meyer DD. Two-dimensional numerical analysis of semiconductor devices : application to bipolar transistors. [Doctoral Dissertation]. The Ohio State University; 1972. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486739553810642


The Ohio State University

29. Josenhans, James Gross. A study of magnetic field effects in the base of a silicon N-P-N junction transistor.

Degree: PhD, Graduate School, 1962, The Ohio State University

Subjects/Keywords: Engineering; Transistors

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APA (6th Edition):

Josenhans, J. G. (1962). A study of magnetic field effects in the base of a silicon N-P-N junction transistor. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu1486559657281127

Chicago Manual of Style (16th Edition):

Josenhans, James Gross. “A study of magnetic field effects in the base of a silicon N-P-N junction transistor.” 1962. Doctoral Dissertation, The Ohio State University. Accessed October 21, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu1486559657281127.

MLA Handbook (7th Edition):

Josenhans, James Gross. “A study of magnetic field effects in the base of a silicon N-P-N junction transistor.” 1962. Web. 21 Oct 2019.

Vancouver:

Josenhans JG. A study of magnetic field effects in the base of a silicon N-P-N junction transistor. [Internet] [Doctoral dissertation]. The Ohio State University; 1962. [cited 2019 Oct 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486559657281127.

Council of Science Editors:

Josenhans JG. A study of magnetic field effects in the base of a silicon N-P-N junction transistor. [Doctoral Dissertation]. The Ohio State University; 1962. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu1486559657281127


The Ohio State University

30. Knaell, Kenneth Kay. Lateral effects in p-n junctions.

Degree: PhD, Graduate School, 1965, The Ohio State University

Subjects/Keywords: Engineering; Transistors

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APA (6th Edition):

Knaell, K. K. (1965). Lateral effects in p-n junctions. (Doctoral Dissertation). The Ohio State University. Retrieved from http://rave.ohiolink.edu/etdc/view?acc_num=osu148656755945344

Chicago Manual of Style (16th Edition):

Knaell, Kenneth Kay. “Lateral effects in p-n junctions.” 1965. Doctoral Dissertation, The Ohio State University. Accessed October 21, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=osu148656755945344.

MLA Handbook (7th Edition):

Knaell, Kenneth Kay. “Lateral effects in p-n junctions.” 1965. Web. 21 Oct 2019.

Vancouver:

Knaell KK. Lateral effects in p-n junctions. [Internet] [Doctoral dissertation]. The Ohio State University; 1965. [cited 2019 Oct 21]. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu148656755945344.

Council of Science Editors:

Knaell KK. Lateral effects in p-n junctions. [Doctoral Dissertation]. The Ohio State University; 1965. Available from: http://rave.ohiolink.edu/etdc/view?acc_num=osu148656755945344

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