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You searched for subject:( SiC). Showing records 1 – 30 of 518 total matches.

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University of Tennessee – Knoxville

1. Timms, Craig. Gate Drive Design for Paralleled SiC MOSFETs in High Power Voltage Source Converters.

Degree: MS, Electrical Engineering, 2018, University of Tennessee – Knoxville

 High power voltage source converters (VSC) are vital in applications ranging from industrial motor drives to renewable energy systems and electrified transportation. In order to… (more)

Subjects/Keywords: SiC

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APA (6th Edition):

Timms, C. (2018). Gate Drive Design for Paralleled SiC MOSFETs in High Power Voltage Source Converters. (Thesis). University of Tennessee – Knoxville. Retrieved from https://trace.tennessee.edu/utk_gradthes/5169

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Timms, Craig. “Gate Drive Design for Paralleled SiC MOSFETs in High Power Voltage Source Converters.” 2018. Thesis, University of Tennessee – Knoxville. Accessed February 18, 2019. https://trace.tennessee.edu/utk_gradthes/5169.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Timms, Craig. “Gate Drive Design for Paralleled SiC MOSFETs in High Power Voltage Source Converters.” 2018. Web. 18 Feb 2019.

Vancouver:

Timms C. Gate Drive Design for Paralleled SiC MOSFETs in High Power Voltage Source Converters. [Internet] [Thesis]. University of Tennessee – Knoxville; 2018. [cited 2019 Feb 18]. Available from: https://trace.tennessee.edu/utk_gradthes/5169.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Timms C. Gate Drive Design for Paralleled SiC MOSFETs in High Power Voltage Source Converters. [Thesis]. University of Tennessee – Knoxville; 2018. Available from: https://trace.tennessee.edu/utk_gradthes/5169

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

2. Abang mahmod, Dayang Salyani Binti. Sintering of Zirconium Diboride-Silicon Carbide (ZrB2-SIC) and Titanium Dibor'ide-Silicon Carbide (TiB2-SIC) Ceramic Composites and Laser Surface Treatment : Application in Low Temperature Protonic Ceramic Fuel Cells (LTPCFCs) : Frittage des Composites Diborure de Zirconium-Carbure de Silicium (ZrB2-SiC) et Diborure de Titane-Carbure de Silicium (TiB2-SiC) Traitement de Surface par Laser : Application Potentielle aux Piles à Combustibles Fonctionnant à Basse Température.

Degree: Docteur es, Matériaux Céramiques et Traitements de Surface, 2017, Limoges; Universiti Malaysia Sarawak. Faculty of Engineering

Le frittage et le traitement par laser sont des techniques remarquables, couramment utilisées dans de nombreux domaines d’applications du fait des qualités qu’ils confèrent aux… (more)

Subjects/Keywords: ZrB2- SiC; ZrB2- SiC; 620.44

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APA (6th Edition):

Abang mahmod, D. S. B. (2017). Sintering of Zirconium Diboride-Silicon Carbide (ZrB2-SIC) and Titanium Dibor'ide-Silicon Carbide (TiB2-SIC) Ceramic Composites and Laser Surface Treatment : Application in Low Temperature Protonic Ceramic Fuel Cells (LTPCFCs) : Frittage des Composites Diborure de Zirconium-Carbure de Silicium (ZrB2-SiC) et Diborure de Titane-Carbure de Silicium (TiB2-SiC) Traitement de Surface par Laser : Application Potentielle aux Piles à Combustibles Fonctionnant à Basse Température. (Doctoral Dissertation). Limoges; Universiti Malaysia Sarawak. Faculty of Engineering. Retrieved from http://www.theses.fr/2017LIMO0074

Chicago Manual of Style (16th Edition):

Abang mahmod, Dayang Salyani Binti. “Sintering of Zirconium Diboride-Silicon Carbide (ZrB2-SIC) and Titanium Dibor'ide-Silicon Carbide (TiB2-SIC) Ceramic Composites and Laser Surface Treatment : Application in Low Temperature Protonic Ceramic Fuel Cells (LTPCFCs) : Frittage des Composites Diborure de Zirconium-Carbure de Silicium (ZrB2-SiC) et Diborure de Titane-Carbure de Silicium (TiB2-SiC) Traitement de Surface par Laser : Application Potentielle aux Piles à Combustibles Fonctionnant à Basse Température.” 2017. Doctoral Dissertation, Limoges; Universiti Malaysia Sarawak. Faculty of Engineering. Accessed February 18, 2019. http://www.theses.fr/2017LIMO0074.

MLA Handbook (7th Edition):

Abang mahmod, Dayang Salyani Binti. “Sintering of Zirconium Diboride-Silicon Carbide (ZrB2-SIC) and Titanium Dibor'ide-Silicon Carbide (TiB2-SIC) Ceramic Composites and Laser Surface Treatment : Application in Low Temperature Protonic Ceramic Fuel Cells (LTPCFCs) : Frittage des Composites Diborure de Zirconium-Carbure de Silicium (ZrB2-SiC) et Diborure de Titane-Carbure de Silicium (TiB2-SiC) Traitement de Surface par Laser : Application Potentielle aux Piles à Combustibles Fonctionnant à Basse Température.” 2017. Web. 18 Feb 2019.

Vancouver:

Abang mahmod DSB. Sintering of Zirconium Diboride-Silicon Carbide (ZrB2-SIC) and Titanium Dibor'ide-Silicon Carbide (TiB2-SIC) Ceramic Composites and Laser Surface Treatment : Application in Low Temperature Protonic Ceramic Fuel Cells (LTPCFCs) : Frittage des Composites Diborure de Zirconium-Carbure de Silicium (ZrB2-SiC) et Diborure de Titane-Carbure de Silicium (TiB2-SiC) Traitement de Surface par Laser : Application Potentielle aux Piles à Combustibles Fonctionnant à Basse Température. [Internet] [Doctoral dissertation]. Limoges; Universiti Malaysia Sarawak. Faculty of Engineering; 2017. [cited 2019 Feb 18]. Available from: http://www.theses.fr/2017LIMO0074.

Council of Science Editors:

Abang mahmod DSB. Sintering of Zirconium Diboride-Silicon Carbide (ZrB2-SIC) and Titanium Dibor'ide-Silicon Carbide (TiB2-SIC) Ceramic Composites and Laser Surface Treatment : Application in Low Temperature Protonic Ceramic Fuel Cells (LTPCFCs) : Frittage des Composites Diborure de Zirconium-Carbure de Silicium (ZrB2-SiC) et Diborure de Titane-Carbure de Silicium (TiB2-SiC) Traitement de Surface par Laser : Application Potentielle aux Piles à Combustibles Fonctionnant à Basse Température. [Doctoral Dissertation]. Limoges; Universiti Malaysia Sarawak. Faculty of Engineering; 2017. Available from: http://www.theses.fr/2017LIMO0074

3. Mikami, Hidenori. Development of Photoelectrochemical and Dry Etching Process for Silicon Carbide Devices : シリコンカーバイド(SiC)デバイスにむけた光電気化学とドライエッチングプロセスの開発; シリコン カーバイド Sic デバイス ニムケタ ヒカリ デンキ カガク ト ドライ エッチング プロセス ノ カイハツ.

Degree: Nara Institute of Science and Technology / 奈良先端科学技術大学院大学

Subjects/Keywords: SiC

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APA (6th Edition):

Mikami, H. (n.d.). Development of Photoelectrochemical and Dry Etching Process for Silicon Carbide Devices : シリコンカーバイド(SiC)デバイスにむけた光電気化学とドライエッチングプロセスの開発; シリコン カーバイド Sic デバイス ニムケタ ヒカリ デンキ カガク ト ドライ エッチング プロセス ノ カイハツ. (Thesis). Nara Institute of Science and Technology / 奈良先端科学技術大学院大学. Retrieved from http://hdl.handle.net/10061/4019

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mikami, Hidenori. “Development of Photoelectrochemical and Dry Etching Process for Silicon Carbide Devices : シリコンカーバイド(SiC)デバイスにむけた光電気化学とドライエッチングプロセスの開発; シリコン カーバイド Sic デバイス ニムケタ ヒカリ デンキ カガク ト ドライ エッチング プロセス ノ カイハツ.” Thesis, Nara Institute of Science and Technology / 奈良先端科学技術大学院大学. Accessed February 18, 2019. http://hdl.handle.net/10061/4019.

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mikami, Hidenori. “Development of Photoelectrochemical and Dry Etching Process for Silicon Carbide Devices : シリコンカーバイド(SiC)デバイスにむけた光電気化学とドライエッチングプロセスの開発; シリコン カーバイド Sic デバイス ニムケタ ヒカリ デンキ カガク ト ドライ エッチング プロセス ノ カイハツ.” Web. 18 Feb 2019.

Note: this citation may be lacking information needed for this citation format:
No year of publication.

Vancouver:

Mikami H. Development of Photoelectrochemical and Dry Etching Process for Silicon Carbide Devices : シリコンカーバイド(SiC)デバイスにむけた光電気化学とドライエッチングプロセスの開発; シリコン カーバイド Sic デバイス ニムケタ ヒカリ デンキ カガク ト ドライ エッチング プロセス ノ カイハツ. [Internet] [Thesis]. Nara Institute of Science and Technology / 奈良先端科学技術大学院大学; [cited 2019 Feb 18]. Available from: http://hdl.handle.net/10061/4019.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

Council of Science Editors:

Mikami H. Development of Photoelectrochemical and Dry Etching Process for Silicon Carbide Devices : シリコンカーバイド(SiC)デバイスにむけた光電気化学とドライエッチングプロセスの開発; シリコン カーバイド Sic デバイス ニムケタ ヒカリ デンキ カガク ト ドライ エッチング プロセス ノ カイハツ. [Thesis]. Nara Institute of Science and Technology / 奈良先端科学技術大学院大学; Available from: http://hdl.handle.net/10061/4019

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

4. 岩崎, 吉記. シリコンカーバイドの絶縁ゲート型電界効果トランジスタに対するアンモニアプラズマ前処理と界面電子物性評価 : Control and analysis of interface properties in insulator/SiC structures by NH3 plasma pretreatment; シリコン カーバイド ノ ゼツエン ゲートガタ デンカイ コウカ トランジスタ ニ タイスル アンモニア プラズマ マエショリ ト カイメン デンシ ブッセイ ヒョウカ.

Degree: Nara Institute of Science and Technology / 奈良先端科学技術大学院大学

Subjects/Keywords: SiC

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APA (6th Edition):

岩崎, . (n.d.). シリコンカーバイドの絶縁ゲート型電界効果トランジスタに対するアンモニアプラズマ前処理と界面電子物性評価 : Control and analysis of interface properties in insulator/SiC structures by NH3 plasma pretreatment; シリコン カーバイド ノ ゼツエン ゲートガタ デンカイ コウカ トランジスタ ニ タイスル アンモニア プラズマ マエショリ ト カイメン デンシ ブッセイ ヒョウカ. (Thesis). Nara Institute of Science and Technology / 奈良先端科学技術大学院大学. Retrieved from http://hdl.handle.net/10061/5514

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

岩崎, 吉記. “シリコンカーバイドの絶縁ゲート型電界効果トランジスタに対するアンモニアプラズマ前処理と界面電子物性評価 : Control and analysis of interface properties in insulator/SiC structures by NH3 plasma pretreatment; シリコン カーバイド ノ ゼツエン ゲートガタ デンカイ コウカ トランジスタ ニ タイスル アンモニア プラズマ マエショリ ト カイメン デンシ ブッセイ ヒョウカ.” Thesis, Nara Institute of Science and Technology / 奈良先端科学技術大学院大学. Accessed February 18, 2019. http://hdl.handle.net/10061/5514.

Note: this citation may be lacking information needed for this citation format:
No year of publication.
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

岩崎, 吉記. “シリコンカーバイドの絶縁ゲート型電界効果トランジスタに対するアンモニアプラズマ前処理と界面電子物性評価 : Control and analysis of interface properties in insulator/SiC structures by NH3 plasma pretreatment; シリコン カーバイド ノ ゼツエン ゲートガタ デンカイ コウカ トランジスタ ニ タイスル アンモニア プラズマ マエショリ ト カイメン デンシ ブッセイ ヒョウカ.” Web. 18 Feb 2019.

Note: this citation may be lacking information needed for this citation format:
No year of publication.

Vancouver:

岩崎 . シリコンカーバイドの絶縁ゲート型電界効果トランジスタに対するアンモニアプラズマ前処理と界面電子物性評価 : Control and analysis of interface properties in insulator/SiC structures by NH3 plasma pretreatment; シリコン カーバイド ノ ゼツエン ゲートガタ デンカイ コウカ トランジスタ ニ タイスル アンモニア プラズマ マエショリ ト カイメン デンシ ブッセイ ヒョウカ. [Internet] [Thesis]. Nara Institute of Science and Technology / 奈良先端科学技術大学院大学; [cited 2019 Feb 18]. Available from: http://hdl.handle.net/10061/5514.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

Council of Science Editors:

岩崎 . シリコンカーバイドの絶縁ゲート型電界効果トランジスタに対するアンモニアプラズマ前処理と界面電子物性評価 : Control and analysis of interface properties in insulator/SiC structures by NH3 plasma pretreatment; シリコン カーバイド ノ ゼツエン ゲートガタ デンカイ コウカ トランジスタ ニ タイスル アンモニア プラズマ マエショリ ト カイメン デンシ ブッセイ ヒョウカ. [Thesis]. Nara Institute of Science and Technology / 奈良先端科学技術大学院大学; Available from: http://hdl.handle.net/10061/5514

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation
No year of publication.

5. 森, 大輔. SiO2/SiC界面における窒素局所構造に関する研究 : Investigation of Local Structures of Nitrogen atoms passivating SiO2/SiC interfaces; SiO2/SiC カイメン ニ オケル チッソ キョクショ コウゾウ ニ カンスル ケンキュウ.

Degree: 博士(工学), 2018, Nara Institute of Science and Technology / 奈良先端科学技術大学院大学

Subjects/Keywords: SiC

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

森, . (2018). SiO2/SiC界面における窒素局所構造に関する研究 : Investigation of Local Structures of Nitrogen atoms passivating SiO2/SiC interfaces; SiO2/SiC カイメン ニ オケル チッソ キョクショ コウゾウ ニ カンスル ケンキュウ. (Thesis). Nara Institute of Science and Technology / 奈良先端科学技術大学院大学. Retrieved from http://hdl.handle.net/10061/12537

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

森, 大輔. “SiO2/SiC界面における窒素局所構造に関する研究 : Investigation of Local Structures of Nitrogen atoms passivating SiO2/SiC interfaces; SiO2/SiC カイメン ニ オケル チッソ キョクショ コウゾウ ニ カンスル ケンキュウ.” 2018. Thesis, Nara Institute of Science and Technology / 奈良先端科学技術大学院大学. Accessed February 18, 2019. http://hdl.handle.net/10061/12537.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

森, 大輔. “SiO2/SiC界面における窒素局所構造に関する研究 : Investigation of Local Structures of Nitrogen atoms passivating SiO2/SiC interfaces; SiO2/SiC カイメン ニ オケル チッソ キョクショ コウゾウ ニ カンスル ケンキュウ.” 2018. Web. 18 Feb 2019.

Vancouver:

森 . SiO2/SiC界面における窒素局所構造に関する研究 : Investigation of Local Structures of Nitrogen atoms passivating SiO2/SiC interfaces; SiO2/SiC カイメン ニ オケル チッソ キョクショ コウゾウ ニ カンスル ケンキュウ. [Internet] [Thesis]. Nara Institute of Science and Technology / 奈良先端科学技術大学院大学; 2018. [cited 2019 Feb 18]. Available from: http://hdl.handle.net/10061/12537.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

森 . SiO2/SiC界面における窒素局所構造に関する研究 : Investigation of Local Structures of Nitrogen atoms passivating SiO2/SiC interfaces; SiO2/SiC カイメン ニ オケル チッソ キョクショ コウゾウ ニ カンスル ケンキュウ. [Thesis]. Nara Institute of Science and Technology / 奈良先端科学技術大学院大学; 2018. Available from: http://hdl.handle.net/10061/12537

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

6. Bazin, Anne-Elisabeth. Conception de diodes Schottky sur 3C- SiC épitaxié sur silicium : Realization of schottky diodes on 3C-SiC : grown on silicon.

Degree: Docteur es, Electronique, 2009, Université François-Rabelais de Tours

Ce travail de thèse est consacré à la réalisation d’une diode Schottky de puissance sur 3C-SiC épitaxié sur silicium. La majeure partie de ce travail… (more)

Subjects/Keywords: 3c-sic

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bazin, A. (2009). Conception de diodes Schottky sur 3C- SiC épitaxié sur silicium : Realization of schottky diodes on 3C-SiC : grown on silicon. (Doctoral Dissertation). Université François-Rabelais de Tours. Retrieved from http://www.theses.fr/2009TOUR4002

Chicago Manual of Style (16th Edition):

Bazin, Anne-Elisabeth. “Conception de diodes Schottky sur 3C- SiC épitaxié sur silicium : Realization of schottky diodes on 3C-SiC : grown on silicon.” 2009. Doctoral Dissertation, Université François-Rabelais de Tours. Accessed February 18, 2019. http://www.theses.fr/2009TOUR4002.

MLA Handbook (7th Edition):

Bazin, Anne-Elisabeth. “Conception de diodes Schottky sur 3C- SiC épitaxié sur silicium : Realization of schottky diodes on 3C-SiC : grown on silicon.” 2009. Web. 18 Feb 2019.

Vancouver:

Bazin A. Conception de diodes Schottky sur 3C- SiC épitaxié sur silicium : Realization of schottky diodes on 3C-SiC : grown on silicon. [Internet] [Doctoral dissertation]. Université François-Rabelais de Tours; 2009. [cited 2019 Feb 18]. Available from: http://www.theses.fr/2009TOUR4002.

Council of Science Editors:

Bazin A. Conception de diodes Schottky sur 3C- SiC épitaxié sur silicium : Realization of schottky diodes on 3C-SiC : grown on silicon. [Doctoral Dissertation]. Université François-Rabelais de Tours; 2009. Available from: http://www.theses.fr/2009TOUR4002

7. Bouzat, Fabien. Elaboration des composites SiC/ZrC par synthèse organométallique et par différentes voies de pyrolyse : Development of SiC/ZrC composites by organometallic synthesis and by different pyrolysis routes.

Degree: Docteur es, Matériaux Céramiques et Traitements de Surface, 2015, Limoges

Dans le domaine des matériaux de structure destinés à des applications thermomécaniques sous conditions extrêmes, les carbures métalliques et, plus particulièrement, ceux de la famille… (more)

Subjects/Keywords: Composites SiC/ZrC; SiC/ZrC Composites; 620.14

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bouzat, F. (2015). Elaboration des composites SiC/ZrC par synthèse organométallique et par différentes voies de pyrolyse : Development of SiC/ZrC composites by organometallic synthesis and by different pyrolysis routes. (Doctoral Dissertation). Limoges. Retrieved from http://www.theses.fr/2015LIMO0130

Chicago Manual of Style (16th Edition):

Bouzat, Fabien. “Elaboration des composites SiC/ZrC par synthèse organométallique et par différentes voies de pyrolyse : Development of SiC/ZrC composites by organometallic synthesis and by different pyrolysis routes.” 2015. Doctoral Dissertation, Limoges. Accessed February 18, 2019. http://www.theses.fr/2015LIMO0130.

MLA Handbook (7th Edition):

Bouzat, Fabien. “Elaboration des composites SiC/ZrC par synthèse organométallique et par différentes voies de pyrolyse : Development of SiC/ZrC composites by organometallic synthesis and by different pyrolysis routes.” 2015. Web. 18 Feb 2019.

Vancouver:

Bouzat F. Elaboration des composites SiC/ZrC par synthèse organométallique et par différentes voies de pyrolyse : Development of SiC/ZrC composites by organometallic synthesis and by different pyrolysis routes. [Internet] [Doctoral dissertation]. Limoges; 2015. [cited 2019 Feb 18]. Available from: http://www.theses.fr/2015LIMO0130.

Council of Science Editors:

Bouzat F. Elaboration des composites SiC/ZrC par synthèse organométallique et par différentes voies de pyrolyse : Development of SiC/ZrC composites by organometallic synthesis and by different pyrolysis routes. [Doctoral Dissertation]. Limoges; 2015. Available from: http://www.theses.fr/2015LIMO0130


Université Montpellier II

8. Constant, Aurore. SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC.

Degree: Docteur es, Physique, 2011, Université Montpellier II

De nos jours, les dispositifs d'électroniques de puissance sont principalement basés sur la technologie silicium qui est mature et très bien établie. Toutefois, le silicium… (more)

Subjects/Keywords: SiC; Oxydation; Mosfet; SiC; Oxidation; Mosfet

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Constant, A. (2011). SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC. (Doctoral Dissertation). Université Montpellier II. Retrieved from http://www.theses.fr/2011MON20061

Chicago Manual of Style (16th Edition):

Constant, Aurore. “SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC.” 2011. Doctoral Dissertation, Université Montpellier II. Accessed February 18, 2019. http://www.theses.fr/2011MON20061.

MLA Handbook (7th Edition):

Constant, Aurore. “SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC.” 2011. Web. 18 Feb 2019.

Vancouver:

Constant A. SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC. [Internet] [Doctoral dissertation]. Université Montpellier II; 2011. [cited 2019 Feb 18]. Available from: http://www.theses.fr/2011MON20061.

Council of Science Editors:

Constant A. SiC oxidation processing technology for MOSFETs fabrication : Technologie d'oxydation pour la fabrication de composants MOSFETs en SiC. [Doctoral Dissertation]. Université Montpellier II; 2011. Available from: http://www.theses.fr/2011MON20061


University of Manchester

9. King, Ashley. Probing the interstellar medium using laboratory samples.

Degree: 2010, University of Manchester

 The aim of this thesis is to investigate the effects of interstellar processing using presolar samples. Dust in the interstellar medium is predicted to have… (more)

Subjects/Keywords: presolar; TOFSIMS; SiC

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APA (6th Edition):

King, A. (2010). Probing the interstellar medium using laboratory samples. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:98410

Chicago Manual of Style (16th Edition):

King, Ashley. “Probing the interstellar medium using laboratory samples.” 2010. Doctoral Dissertation, University of Manchester. Accessed February 18, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:98410.

MLA Handbook (7th Edition):

King, Ashley. “Probing the interstellar medium using laboratory samples.” 2010. Web. 18 Feb 2019.

Vancouver:

King A. Probing the interstellar medium using laboratory samples. [Internet] [Doctoral dissertation]. University of Manchester; 2010. [cited 2019 Feb 18]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:98410.

Council of Science Editors:

King A. Probing the interstellar medium using laboratory samples. [Doctoral Dissertation]. University of Manchester; 2010. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:98410


University of North Texas

10. Lee, Kyung-Min. Nanoscale Materials Applications: Thermoelectrical, Biological, and Optical Applications with Nanomanipulation Technology.

Degree: 2011, University of North Texas

 In a sub-wavelength scale, even approaching to the atomic scale, nanoscale physics shows various novel phenomena. Since it has been named, nanoscience and nanotechnology has… (more)

Subjects/Keywords: Nanoscale; SiC; nanomanipulation

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APA (6th Edition):

Lee, K. (2011). Nanoscale Materials Applications: Thermoelectrical, Biological, and Optical Applications with Nanomanipulation Technology. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc84238/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lee, Kyung-Min. “Nanoscale Materials Applications: Thermoelectrical, Biological, and Optical Applications with Nanomanipulation Technology.” 2011. Thesis, University of North Texas. Accessed February 18, 2019. https://digital.library.unt.edu/ark:/67531/metadc84238/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lee, Kyung-Min. “Nanoscale Materials Applications: Thermoelectrical, Biological, and Optical Applications with Nanomanipulation Technology.” 2011. Web. 18 Feb 2019.

Vancouver:

Lee K. Nanoscale Materials Applications: Thermoelectrical, Biological, and Optical Applications with Nanomanipulation Technology. [Internet] [Thesis]. University of North Texas; 2011. [cited 2019 Feb 18]. Available from: https://digital.library.unt.edu/ark:/67531/metadc84238/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lee K. Nanoscale Materials Applications: Thermoelectrical, Biological, and Optical Applications with Nanomanipulation Technology. [Thesis]. University of North Texas; 2011. Available from: https://digital.library.unt.edu/ark:/67531/metadc84238/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Virginia Tech

11. DiMarino, Christina Marie. High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors.

Degree: MS, Electrical and Computer Engineering, 2014, Virginia Tech

 This thesis provides insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor transistors, including the MOSFET, BJT, SJT, and normally-on and normally-off JFETs. Both… (more)

Subjects/Keywords: power semiconductor devices; SiC MOSFET; SiC BJT; SiC JFET; high temperature; characterization; silicon carbide

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APA (6th Edition):

DiMarino, C. M. (2014). High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors. (Masters Thesis). Virginia Tech. Retrieved from http://hdl.handle.net/10919/78116

Chicago Manual of Style (16th Edition):

DiMarino, Christina Marie. “High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors.” 2014. Masters Thesis, Virginia Tech. Accessed February 18, 2019. http://hdl.handle.net/10919/78116.

MLA Handbook (7th Edition):

DiMarino, Christina Marie. “High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors.” 2014. Web. 18 Feb 2019.

Vancouver:

DiMarino CM. High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors. [Internet] [Masters thesis]. Virginia Tech; 2014. [cited 2019 Feb 18]. Available from: http://hdl.handle.net/10919/78116.

Council of Science Editors:

DiMarino CM. High Temperature Characterization and Analysis of Silicon Carbide (SiC) Power Semiconductor Transistors. [Masters Thesis]. Virginia Tech; 2014. Available from: http://hdl.handle.net/10919/78116


University of Pretoria

12. Kuhudzai, Remeredzai Joseph. Diffusion of ion implanted iodine in 6H-SiC.

Degree: Physics, 2011, University of Pretoria

 The diffusion of iodine implanted 6H-SiC has been investigated using Rutherford backscattering Spectrometry (RBS). SiC is used as the main barrier in the modern high… (more)

Subjects/Keywords: 6h-sic; Iodine; UCTD

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APA (6th Edition):

Kuhudzai, R. J. (2011). Diffusion of ion implanted iodine in 6H-SiC. (Masters Thesis). University of Pretoria. Retrieved from http://hdl.handle.net/2263/25921

Chicago Manual of Style (16th Edition):

Kuhudzai, Remeredzai Joseph. “Diffusion of ion implanted iodine in 6H-SiC.” 2011. Masters Thesis, University of Pretoria. Accessed February 18, 2019. http://hdl.handle.net/2263/25921.

MLA Handbook (7th Edition):

Kuhudzai, Remeredzai Joseph. “Diffusion of ion implanted iodine in 6H-SiC.” 2011. Web. 18 Feb 2019.

Vancouver:

Kuhudzai RJ. Diffusion of ion implanted iodine in 6H-SiC. [Internet] [Masters thesis]. University of Pretoria; 2011. [cited 2019 Feb 18]. Available from: http://hdl.handle.net/2263/25921.

Council of Science Editors:

Kuhudzai RJ. Diffusion of ion implanted iodine in 6H-SiC. [Masters Thesis]. University of Pretoria; 2011. Available from: http://hdl.handle.net/2263/25921

13. Duquesne, Loys. Caractérisation thermique de structures composites SiCf/SiC tubulaires pour applications nucléaires : Thermal characterization of SiCf/SiC tubular composite structures for nuclear applications.

Degree: Docteur es, Génie énergétique, 2015, Paris, ENSAM

Les recherches portant sur le développement des composites réfractaires de type SiCf/SiC pour application gainage du combustible des réacteurs de géneration IV ont conduit le… (more)

Subjects/Keywords: Composites SiC/SiC; Diffusivité thermique; Thermocinétique; Modélisation; Relation structure-Propriétés; SiC/SiC composites; Thermal diffusivity; Thermokinetik; Modeling; Structure-Property relationship

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APA (6th Edition):

Duquesne, L. (2015). Caractérisation thermique de structures composites SiCf/SiC tubulaires pour applications nucléaires : Thermal characterization of SiCf/SiC tubular composite structures for nuclear applications. (Doctoral Dissertation). Paris, ENSAM. Retrieved from http://www.theses.fr/2015ENAM0052

Chicago Manual of Style (16th Edition):

Duquesne, Loys. “Caractérisation thermique de structures composites SiCf/SiC tubulaires pour applications nucléaires : Thermal characterization of SiCf/SiC tubular composite structures for nuclear applications.” 2015. Doctoral Dissertation, Paris, ENSAM. Accessed February 18, 2019. http://www.theses.fr/2015ENAM0052.

MLA Handbook (7th Edition):

Duquesne, Loys. “Caractérisation thermique de structures composites SiCf/SiC tubulaires pour applications nucléaires : Thermal characterization of SiCf/SiC tubular composite structures for nuclear applications.” 2015. Web. 18 Feb 2019.

Vancouver:

Duquesne L. Caractérisation thermique de structures composites SiCf/SiC tubulaires pour applications nucléaires : Thermal characterization of SiCf/SiC tubular composite structures for nuclear applications. [Internet] [Doctoral dissertation]. Paris, ENSAM; 2015. [cited 2019 Feb 18]. Available from: http://www.theses.fr/2015ENAM0052.

Council of Science Editors:

Duquesne L. Caractérisation thermique de structures composites SiCf/SiC tubulaires pour applications nucléaires : Thermal characterization of SiCf/SiC tubular composite structures for nuclear applications. [Doctoral Dissertation]. Paris, ENSAM; 2015. Available from: http://www.theses.fr/2015ENAM0052


University of Auckland

14. Etzion, Ron. Degradation mechanisms and development of silicon carbide refractories.

Degree: 2008, University of Auckland

 The lifetime of aluminium reduction cells is of considerable importance in the operating economics of an aluminium smelter. Not only are the cell materials costly,… (more)

Subjects/Keywords: Aluminium; SiC refractories, Corrosion

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APA (6th Edition):

Etzion, R. (2008). Degradation mechanisms and development of silicon carbide refractories. (Doctoral Dissertation). University of Auckland. Retrieved from http://hdl.handle.net/2292/4531

Chicago Manual of Style (16th Edition):

Etzion, Ron. “Degradation mechanisms and development of silicon carbide refractories.” 2008. Doctoral Dissertation, University of Auckland. Accessed February 18, 2019. http://hdl.handle.net/2292/4531.

MLA Handbook (7th Edition):

Etzion, Ron. “Degradation mechanisms and development of silicon carbide refractories.” 2008. Web. 18 Feb 2019.

Vancouver:

Etzion R. Degradation mechanisms and development of silicon carbide refractories. [Internet] [Doctoral dissertation]. University of Auckland; 2008. [cited 2019 Feb 18]. Available from: http://hdl.handle.net/2292/4531.

Council of Science Editors:

Etzion R. Degradation mechanisms and development of silicon carbide refractories. [Doctoral Dissertation]. University of Auckland; 2008. Available from: http://hdl.handle.net/2292/4531


University of Pretoria

15. [No author]. Diffusion of ion implanted iodine in 6H-SiC .

Degree: 2011, University of Pretoria

 The diffusion of iodine implanted 6H-SiC has been investigated using Rutherford backscattering Spectrometry (RBS). SiC is used as the main barrier in the modern high… (more)

Subjects/Keywords: 6h-sic; Iodine; UCTD

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APA (6th Edition):

author], [. (2011). Diffusion of ion implanted iodine in 6H-SiC . (Masters Thesis). University of Pretoria. Retrieved from http://upetd.up.ac.za/thesis/available/etd-06282011-112122/

Chicago Manual of Style (16th Edition):

author], [No. “Diffusion of ion implanted iodine in 6H-SiC .” 2011. Masters Thesis, University of Pretoria. Accessed February 18, 2019. http://upetd.up.ac.za/thesis/available/etd-06282011-112122/.

MLA Handbook (7th Edition):

author], [No. “Diffusion of ion implanted iodine in 6H-SiC .” 2011. Web. 18 Feb 2019.

Vancouver:

author] [. Diffusion of ion implanted iodine in 6H-SiC . [Internet] [Masters thesis]. University of Pretoria; 2011. [cited 2019 Feb 18]. Available from: http://upetd.up.ac.za/thesis/available/etd-06282011-112122/.

Council of Science Editors:

author] [. Diffusion of ion implanted iodine in 6H-SiC . [Masters Thesis]. University of Pretoria; 2011. Available from: http://upetd.up.ac.za/thesis/available/etd-06282011-112122/


University of Manchester

16. Paul, James. Joining of silicon carbide for accident tolerant PWR fuel cladding.

Degree: PhD, 2017, University of Manchester

 Following two previous nuclear reactor accidents involving light water reactors, there is a renewed interest in accident tolerant fuels. These accident tolerant fuels should not… (more)

Subjects/Keywords: Deposition; Carbide; Joining; Silicon; SiC

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APA (6th Edition):

Paul, J. (2017). Joining of silicon carbide for accident tolerant PWR fuel cladding. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/joining-of-silicon-carbide-for-accident-tolerant-pwr-fuel-cladding(f9851a0a-ef68-465e-8029-a31ab77fab27).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.727983

Chicago Manual of Style (16th Edition):

Paul, James. “Joining of silicon carbide for accident tolerant PWR fuel cladding.” 2017. Doctoral Dissertation, University of Manchester. Accessed February 18, 2019. https://www.research.manchester.ac.uk/portal/en/theses/joining-of-silicon-carbide-for-accident-tolerant-pwr-fuel-cladding(f9851a0a-ef68-465e-8029-a31ab77fab27).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.727983.

MLA Handbook (7th Edition):

Paul, James. “Joining of silicon carbide for accident tolerant PWR fuel cladding.” 2017. Web. 18 Feb 2019.

Vancouver:

Paul J. Joining of silicon carbide for accident tolerant PWR fuel cladding. [Internet] [Doctoral dissertation]. University of Manchester; 2017. [cited 2019 Feb 18]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/joining-of-silicon-carbide-for-accident-tolerant-pwr-fuel-cladding(f9851a0a-ef68-465e-8029-a31ab77fab27).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.727983.

Council of Science Editors:

Paul J. Joining of silicon carbide for accident tolerant PWR fuel cladding. [Doctoral Dissertation]. University of Manchester; 2017. Available from: https://www.research.manchester.ac.uk/portal/en/theses/joining-of-silicon-carbide-for-accident-tolerant-pwr-fuel-cladding(f9851a0a-ef68-465e-8029-a31ab77fab27).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.727983

17. Shin, Yun ji. Étude du procédé de croissance en solution à haute température pour le développement de substrats de 4H-SiC fortement dopes : Study of a high temperature solution growth process for the development of heavily doped 4H-SiC substrates.

Degree: Docteur es, Matériaux, mécanique, génie civil, électrochimie, 2016, Grenoble Alpes

 Le carbure de silicium est un semi-conducteur à grand gap qui s’est récemment imposé comme un matériau clé pour l’électronique de puissance. Les cristaux massifs… (more)

Subjects/Keywords: SiC; Solution growth; Cristallogenèse; Électronique de puissance; 4H-SiC; Dopage; SiC; Tssg; Crystal Growth; Power electronics; 4H-SiC; Doping; 620

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APA (6th Edition):

Shin, Y. j. (2016). Étude du procédé de croissance en solution à haute température pour le développement de substrats de 4H-SiC fortement dopes : Study of a high temperature solution growth process for the development of heavily doped 4H-SiC substrates. (Doctoral Dissertation). Grenoble Alpes. Retrieved from http://www.theses.fr/2016GREAI058

Chicago Manual of Style (16th Edition):

Shin, Yun ji. “Étude du procédé de croissance en solution à haute température pour le développement de substrats de 4H-SiC fortement dopes : Study of a high temperature solution growth process for the development of heavily doped 4H-SiC substrates.” 2016. Doctoral Dissertation, Grenoble Alpes. Accessed February 18, 2019. http://www.theses.fr/2016GREAI058.

MLA Handbook (7th Edition):

Shin, Yun ji. “Étude du procédé de croissance en solution à haute température pour le développement de substrats de 4H-SiC fortement dopes : Study of a high temperature solution growth process for the development of heavily doped 4H-SiC substrates.” 2016. Web. 18 Feb 2019.

Vancouver:

Shin Yj. Étude du procédé de croissance en solution à haute température pour le développement de substrats de 4H-SiC fortement dopes : Study of a high temperature solution growth process for the development of heavily doped 4H-SiC substrates. [Internet] [Doctoral dissertation]. Grenoble Alpes; 2016. [cited 2019 Feb 18]. Available from: http://www.theses.fr/2016GREAI058.

Council of Science Editors:

Shin Yj. Étude du procédé de croissance en solution à haute température pour le développement de substrats de 4H-SiC fortement dopes : Study of a high temperature solution growth process for the development of heavily doped 4H-SiC substrates. [Doctoral Dissertation]. Grenoble Alpes; 2016. Available from: http://www.theses.fr/2016GREAI058


Penn State University

18. Follman, Jacob Jay. On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs.

Degree: MS, Materials Science and Engineering, 2013, Penn State University

 We utilize electrically detected magnetic resonance (EDMR) to explore the effects of the negative bias temperature instability (NBTI) in 4H-SiC metal oxide semiconductor field effect… (more)

Subjects/Keywords: NBTI; SiC; MOSFET; EPR; EDMR

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APA (6th Edition):

Follman, J. J. (2013). On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs. (Masters Thesis). Penn State University. Retrieved from https://etda.libraries.psu.edu/catalog/17654

Chicago Manual of Style (16th Edition):

Follman, Jacob Jay. “On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs.” 2013. Masters Thesis, Penn State University. Accessed February 18, 2019. https://etda.libraries.psu.edu/catalog/17654.

MLA Handbook (7th Edition):

Follman, Jacob Jay. “On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs.” 2013. Web. 18 Feb 2019.

Vancouver:

Follman JJ. On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs. [Internet] [Masters thesis]. Penn State University; 2013. [cited 2019 Feb 18]. Available from: https://etda.libraries.psu.edu/catalog/17654.

Council of Science Editors:

Follman JJ. On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs. [Masters Thesis]. Penn State University; 2013. Available from: https://etda.libraries.psu.edu/catalog/17654


University of Manchester

19. King, Ashley. Probing the interstellar medium using laboratory samples.

Degree: PhD, 2010, University of Manchester

 The aim of this thesis is to investigate the effects of interstellar processing using presolar samples. Dust in the interstellar medium is predicted to have… (more)

Subjects/Keywords: 520; presolar, TOFSIMS, SiC

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APA (6th Edition):

King, A. (2010). Probing the interstellar medium using laboratory samples. (Doctoral Dissertation). University of Manchester. Retrieved from https://www.research.manchester.ac.uk/portal/en/theses/probing-the-interstellar-medium-using-laboratory-samples(b6e9073b-75a7-40cd-8bd2-c0825c45a054).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.527420

Chicago Manual of Style (16th Edition):

King, Ashley. “Probing the interstellar medium using laboratory samples.” 2010. Doctoral Dissertation, University of Manchester. Accessed February 18, 2019. https://www.research.manchester.ac.uk/portal/en/theses/probing-the-interstellar-medium-using-laboratory-samples(b6e9073b-75a7-40cd-8bd2-c0825c45a054).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.527420.

MLA Handbook (7th Edition):

King, Ashley. “Probing the interstellar medium using laboratory samples.” 2010. Web. 18 Feb 2019.

Vancouver:

King A. Probing the interstellar medium using laboratory samples. [Internet] [Doctoral dissertation]. University of Manchester; 2010. [cited 2019 Feb 18]. Available from: https://www.research.manchester.ac.uk/portal/en/theses/probing-the-interstellar-medium-using-laboratory-samples(b6e9073b-75a7-40cd-8bd2-c0825c45a054).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.527420.

Council of Science Editors:

King A. Probing the interstellar medium using laboratory samples. [Doctoral Dissertation]. University of Manchester; 2010. Available from: https://www.research.manchester.ac.uk/portal/en/theses/probing-the-interstellar-medium-using-laboratory-samples(b6e9073b-75a7-40cd-8bd2-c0825c45a054).html ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.527420

20. Perrot, Grégory. Modélisation du comportement des composites à matrice céramique auto-cicatrisante sous charge et atmosphère oxydante : Modeling of the mechanical behavior of self-healing ceramic matrix composites under load and oxidizing atmosphere.

Degree: Docteur es, Physico-chimie de la matière condensée, 2015, Bordeaux

Les matériaux composites à matrice céramique (CMCs) à matrice auto-cicatrisantes (MAC) sont développées depuis plusieurs années pour leurs possibilités d'application dans le domaine de la… (more)

Subjects/Keywords: Composites SiC/SiC; Diffusivité thermique; Thermocinétique; Modélisation; Relation structure-propriétés; SiC / SiC Composites; Thermal diffusivity; Thermokinetics; Modeling; Structure properties

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APA (6th Edition):

Perrot, G. (2015). Modélisation du comportement des composites à matrice céramique auto-cicatrisante sous charge et atmosphère oxydante : Modeling of the mechanical behavior of self-healing ceramic matrix composites under load and oxidizing atmosphere. (Doctoral Dissertation). Bordeaux. Retrieved from http://www.theses.fr/2015BORD0442

Chicago Manual of Style (16th Edition):

Perrot, Grégory. “Modélisation du comportement des composites à matrice céramique auto-cicatrisante sous charge et atmosphère oxydante : Modeling of the mechanical behavior of self-healing ceramic matrix composites under load and oxidizing atmosphere.” 2015. Doctoral Dissertation, Bordeaux. Accessed February 18, 2019. http://www.theses.fr/2015BORD0442.

MLA Handbook (7th Edition):

Perrot, Grégory. “Modélisation du comportement des composites à matrice céramique auto-cicatrisante sous charge et atmosphère oxydante : Modeling of the mechanical behavior of self-healing ceramic matrix composites under load and oxidizing atmosphere.” 2015. Web. 18 Feb 2019.

Vancouver:

Perrot G. Modélisation du comportement des composites à matrice céramique auto-cicatrisante sous charge et atmosphère oxydante : Modeling of the mechanical behavior of self-healing ceramic matrix composites under load and oxidizing atmosphere. [Internet] [Doctoral dissertation]. Bordeaux; 2015. [cited 2019 Feb 18]. Available from: http://www.theses.fr/2015BORD0442.

Council of Science Editors:

Perrot G. Modélisation du comportement des composites à matrice céramique auto-cicatrisante sous charge et atmosphère oxydante : Modeling of the mechanical behavior of self-healing ceramic matrix composites under load and oxidizing atmosphere. [Doctoral Dissertation]. Bordeaux; 2015. Available from: http://www.theses.fr/2015BORD0442


Arizona State University

21. Summers, Nicholas Burton. The Use of Voltage Compliant Silicon on Insulator MESFETs for High Power and High Temperature Pulse Width Modulated Drive Circuits.

Degree: MS, Electrical Engineering, 2010, Arizona State University

 Silicon Carbide (SiC) junction field effect transistors (JFETs) are ideal for switching high current, high voltage loads in high temperature environments. These devices require external… (more)

Subjects/Keywords: Electrical Engineering; MESFET; SiC; SOI

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APA (6th Edition):

Summers, N. B. (2010). The Use of Voltage Compliant Silicon on Insulator MESFETs for High Power and High Temperature Pulse Width Modulated Drive Circuits. (Masters Thesis). Arizona State University. Retrieved from http://repository.asu.edu/items/8692

Chicago Manual of Style (16th Edition):

Summers, Nicholas Burton. “The Use of Voltage Compliant Silicon on Insulator MESFETs for High Power and High Temperature Pulse Width Modulated Drive Circuits.” 2010. Masters Thesis, Arizona State University. Accessed February 18, 2019. http://repository.asu.edu/items/8692.

MLA Handbook (7th Edition):

Summers, Nicholas Burton. “The Use of Voltage Compliant Silicon on Insulator MESFETs for High Power and High Temperature Pulse Width Modulated Drive Circuits.” 2010. Web. 18 Feb 2019.

Vancouver:

Summers NB. The Use of Voltage Compliant Silicon on Insulator MESFETs for High Power and High Temperature Pulse Width Modulated Drive Circuits. [Internet] [Masters thesis]. Arizona State University; 2010. [cited 2019 Feb 18]. Available from: http://repository.asu.edu/items/8692.

Council of Science Editors:

Summers NB. The Use of Voltage Compliant Silicon on Insulator MESFETs for High Power and High Temperature Pulse Width Modulated Drive Circuits. [Masters Thesis]. Arizona State University; 2010. Available from: http://repository.asu.edu/items/8692

22. Berdoyes, Inès. Interactions entre le silicium liquide et le carbure de silicium, application au composite SiC/SiC : Interactions between liquid silicon and silicon carbide, application to SiC/SiC composite.

Degree: Docteur es, Physico-chimie de la matière condensée, 2018, Bordeaux

Dans un contexte de développement du trafic aérien, et en vue de répondre aux nouvelles normes environnementales, il est désormais impératif de diminuer la consommation… (more)

Subjects/Keywords: SiC/SiC; Infiltration en phase liquide; Réaction aux interfaces; Modulation des réactions chimiques; SiC/SiC; Interaction; Characterization; Silicon; Melt Infiltration

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Berdoyes, I. (2018). Interactions entre le silicium liquide et le carbure de silicium, application au composite SiC/SiC : Interactions between liquid silicon and silicon carbide, application to SiC/SiC composite. (Doctoral Dissertation). Bordeaux. Retrieved from http://www.theses.fr/2018BORD0113

Chicago Manual of Style (16th Edition):

Berdoyes, Inès. “Interactions entre le silicium liquide et le carbure de silicium, application au composite SiC/SiC : Interactions between liquid silicon and silicon carbide, application to SiC/SiC composite.” 2018. Doctoral Dissertation, Bordeaux. Accessed February 18, 2019. http://www.theses.fr/2018BORD0113.

MLA Handbook (7th Edition):

Berdoyes, Inès. “Interactions entre le silicium liquide et le carbure de silicium, application au composite SiC/SiC : Interactions between liquid silicon and silicon carbide, application to SiC/SiC composite.” 2018. Web. 18 Feb 2019.

Vancouver:

Berdoyes I. Interactions entre le silicium liquide et le carbure de silicium, application au composite SiC/SiC : Interactions between liquid silicon and silicon carbide, application to SiC/SiC composite. [Internet] [Doctoral dissertation]. Bordeaux; 2018. [cited 2019 Feb 18]. Available from: http://www.theses.fr/2018BORD0113.

Council of Science Editors:

Berdoyes I. Interactions entre le silicium liquide et le carbure de silicium, application au composite SiC/SiC : Interactions between liquid silicon and silicon carbide, application to SiC/SiC composite. [Doctoral Dissertation]. Bordeaux; 2018. Available from: http://www.theses.fr/2018BORD0113


University of Manchester

23. Paul, James Ian. Joining of silicon carbide for accident tolerant PWR fuel cladding.

Degree: 2017, University of Manchester

 Following two previous nuclear reactor accidents involving light water reactors, there is a renewed interest in accident tolerant fuels. These accident tolerant fuels should not… (more)

Subjects/Keywords: SiC; Silicon; Carbide; Joining; Deposition

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APA (6th Edition):

Paul, J. I. (2017). Joining of silicon carbide for accident tolerant PWR fuel cladding. (Doctoral Dissertation). University of Manchester. Retrieved from http://www.manchester.ac.uk/escholar/uk-ac-man-scw:309135

Chicago Manual of Style (16th Edition):

Paul, James Ian. “Joining of silicon carbide for accident tolerant PWR fuel cladding.” 2017. Doctoral Dissertation, University of Manchester. Accessed February 18, 2019. http://www.manchester.ac.uk/escholar/uk-ac-man-scw:309135.

MLA Handbook (7th Edition):

Paul, James Ian. “Joining of silicon carbide for accident tolerant PWR fuel cladding.” 2017. Web. 18 Feb 2019.

Vancouver:

Paul JI. Joining of silicon carbide for accident tolerant PWR fuel cladding. [Internet] [Doctoral dissertation]. University of Manchester; 2017. [cited 2019 Feb 18]. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:309135.

Council of Science Editors:

Paul JI. Joining of silicon carbide for accident tolerant PWR fuel cladding. [Doctoral Dissertation]. University of Manchester; 2017. Available from: http://www.manchester.ac.uk/escholar/uk-ac-man-scw:309135


Universidade Nova

24. Vigia, Janete dos Santos. O Desporto na SIC.

Degree: 2014, Universidade Nova

 Elaborado no âmbito do Mestrado em Jornalismo, o presente relatório resulta da experiência vivida ao longo de seis meses na redação da Sociedade Independente de… (more)

Subjects/Keywords: SIC; Desporto; Televisão; Jornalismo

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APA (6th Edition):

Vigia, J. d. S. (2014). O Desporto na SIC. (Thesis). Universidade Nova. Retrieved from http://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/13657

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Vigia, Janete dos Santos. “O Desporto na SIC.” 2014. Thesis, Universidade Nova. Accessed February 18, 2019. http://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/13657.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Vigia, Janete dos Santos. “O Desporto na SIC.” 2014. Web. 18 Feb 2019.

Vancouver:

Vigia JdS. O Desporto na SIC. [Internet] [Thesis]. Universidade Nova; 2014. [cited 2019 Feb 18]. Available from: http://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/13657.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Vigia JdS. O Desporto na SIC. [Thesis]. Universidade Nova; 2014. Available from: http://www.rcaap.pt/detail.jsp?id=oai:run.unl.pt:10362/13657

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of North Texas

25. Poudel, Prakash Raj. Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates.

Degree: 2011, University of North Texas

 The systematic study of the formation of β-SiC formed by low energy carbon ion (C-)implantation into Si followed by high temperature annealing is presented. The… (more)

Subjects/Keywords: SiC; ion implantation; ion beam

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APA (6th Edition):

Poudel, P. R. (2011). Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates. (Thesis). University of North Texas. Retrieved from https://digital.library.unt.edu/ark:/67531/metadc68033/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Poudel, Prakash Raj. “Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates.” 2011. Thesis, University of North Texas. Accessed February 18, 2019. https://digital.library.unt.edu/ark:/67531/metadc68033/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Poudel, Prakash Raj. “Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates.” 2011. Web. 18 Feb 2019.

Vancouver:

Poudel PR. Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates. [Internet] [Thesis]. University of North Texas; 2011. [cited 2019 Feb 18]. Available from: https://digital.library.unt.edu/ark:/67531/metadc68033/.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Poudel PR. Ion Beam Synthesis of Carbon Assisted Nanosystems in Silicon Based Substrates. [Thesis]. University of North Texas; 2011. Available from: https://digital.library.unt.edu/ark:/67531/metadc68033/

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Waterloo

26. Nanji, Tariq. Reduction of Implementation Complexity in MIMO-OFDM Decoding for V-BLAST Architecture.

Degree: 2010, University of Waterloo

 This dissertation documents alternative designs of the Zero Forcing decoding algorithm with Successive Interference Cancellation (ZF-SIC) for use in Vertical Bell Laboratories Layered Space Time… (more)

Subjects/Keywords: MIMO; OFDM; ZF-SIC

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APA (6th Edition):

Nanji, T. (2010). Reduction of Implementation Complexity in MIMO-OFDM Decoding for V-BLAST Architecture. (Thesis). University of Waterloo. Retrieved from http://hdl.handle.net/10012/5388

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Nanji, Tariq. “Reduction of Implementation Complexity in MIMO-OFDM Decoding for V-BLAST Architecture.” 2010. Thesis, University of Waterloo. Accessed February 18, 2019. http://hdl.handle.net/10012/5388.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Nanji, Tariq. “Reduction of Implementation Complexity in MIMO-OFDM Decoding for V-BLAST Architecture.” 2010. Web. 18 Feb 2019.

Vancouver:

Nanji T. Reduction of Implementation Complexity in MIMO-OFDM Decoding for V-BLAST Architecture. [Internet] [Thesis]. University of Waterloo; 2010. [cited 2019 Feb 18]. Available from: http://hdl.handle.net/10012/5388.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Nanji T. Reduction of Implementation Complexity in MIMO-OFDM Decoding for V-BLAST Architecture. [Thesis]. University of Waterloo; 2010. Available from: http://hdl.handle.net/10012/5388

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

27. Lundqvist, Björn. Polytype formation in sublimation epitaxy of SiC on low off-axis substrates.

Degree: The Institute of Technology, 2011, Linköping UniversityLinköping University

  Sublimation epitaxy of SiC on low off-axis substrates was performed. The growth was performed at different temperatures, mainly under vacuum conditions or with an… (more)

Subjects/Keywords: Sublimation; epitaxy; SiC; polytype

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APA (6th Edition):

Lundqvist, B. (2011). Polytype formation in sublimation epitaxy of SiC on low off-axis substrates. (Thesis). Linköping UniversityLinköping University. Retrieved from http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-74414

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Lundqvist, Björn. “Polytype formation in sublimation epitaxy of SiC on low off-axis substrates.” 2011. Thesis, Linköping UniversityLinköping University. Accessed February 18, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-74414.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Lundqvist, Björn. “Polytype formation in sublimation epitaxy of SiC on low off-axis substrates.” 2011. Web. 18 Feb 2019.

Vancouver:

Lundqvist B. Polytype formation in sublimation epitaxy of SiC on low off-axis substrates. [Internet] [Thesis]. Linköping UniversityLinköping University; 2011. [cited 2019 Feb 18]. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-74414.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Lundqvist B. Polytype formation in sublimation epitaxy of SiC on low off-axis substrates. [Thesis]. Linköping UniversityLinköping University; 2011. Available from: http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-74414

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Tennessee – Knoxville

28. Yang, Fei. Design Considerations for Paralleling Multiple Chips in SiC Power Modules.

Degree: MS, Electrical Engineering, 2017, University of Tennessee – Knoxville

  With the benefits of fast switching speed, low on-resistance and high thermal conductivity, silicon carbide (SiC) devices are being implemented in converter designs with… (more)

Subjects/Keywords: SiC; Package; Power and Energy

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APA (6th Edition):

Yang, F. (2017). Design Considerations for Paralleling Multiple Chips in SiC Power Modules. (Thesis). University of Tennessee – Knoxville. Retrieved from https://trace.tennessee.edu/utk_gradthes/4964

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Yang, Fei. “Design Considerations for Paralleling Multiple Chips in SiC Power Modules.” 2017. Thesis, University of Tennessee – Knoxville. Accessed February 18, 2019. https://trace.tennessee.edu/utk_gradthes/4964.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Yang, Fei. “Design Considerations for Paralleling Multiple Chips in SiC Power Modules.” 2017. Web. 18 Feb 2019.

Vancouver:

Yang F. Design Considerations for Paralleling Multiple Chips in SiC Power Modules. [Internet] [Thesis]. University of Tennessee – Knoxville; 2017. [cited 2019 Feb 18]. Available from: https://trace.tennessee.edu/utk_gradthes/4964.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Yang F. Design Considerations for Paralleling Multiple Chips in SiC Power Modules. [Thesis]. University of Tennessee – Knoxville; 2017. Available from: https://trace.tennessee.edu/utk_gradthes/4964

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

29. Piriou, Cassandre. Etude du comportement à l'oxydation de céramiques ultra-réfractaires à base de diborure d'hafnium (ou zirconium) et de carbure de silicium sous oxygène moléculaire et dissocié : Study of the oxidation behavior of HfB2 (or ZrB2) based-ultra-high temperature ceramics with silicon carbide under molecular and dissociated oxygen.

Degree: Docteur es, Matériaux céramiques et traitements de surface, 2018, Limoges

Ce travail se place dans le cadre des matériaux thermo-structuraux utilisés dans les applications aéronautiques et aérospatiales. Les composites HfB2-SiC et ZrB2-SiC se sont avérés… (more)

Subjects/Keywords: Composites HfB2-SiC et ZrB2-SiC; SPS; Oxydation; Mécanismes; HfB2-SiC and ZrB2-SiC composites; SPS; Oxidation; Mechanisms; 620.112 17

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APA (6th Edition):

Piriou, C. (2018). Etude du comportement à l'oxydation de céramiques ultra-réfractaires à base de diborure d'hafnium (ou zirconium) et de carbure de silicium sous oxygène moléculaire et dissocié : Study of the oxidation behavior of HfB2 (or ZrB2) based-ultra-high temperature ceramics with silicon carbide under molecular and dissociated oxygen. (Doctoral Dissertation). Limoges. Retrieved from http://www.theses.fr/2018LIMO0093

Chicago Manual of Style (16th Edition):

Piriou, Cassandre. “Etude du comportement à l'oxydation de céramiques ultra-réfractaires à base de diborure d'hafnium (ou zirconium) et de carbure de silicium sous oxygène moléculaire et dissocié : Study of the oxidation behavior of HfB2 (or ZrB2) based-ultra-high temperature ceramics with silicon carbide under molecular and dissociated oxygen.” 2018. Doctoral Dissertation, Limoges. Accessed February 18, 2019. http://www.theses.fr/2018LIMO0093.

MLA Handbook (7th Edition):

Piriou, Cassandre. “Etude du comportement à l'oxydation de céramiques ultra-réfractaires à base de diborure d'hafnium (ou zirconium) et de carbure de silicium sous oxygène moléculaire et dissocié : Study of the oxidation behavior of HfB2 (or ZrB2) based-ultra-high temperature ceramics with silicon carbide under molecular and dissociated oxygen.” 2018. Web. 18 Feb 2019.

Vancouver:

Piriou C. Etude du comportement à l'oxydation de céramiques ultra-réfractaires à base de diborure d'hafnium (ou zirconium) et de carbure de silicium sous oxygène moléculaire et dissocié : Study of the oxidation behavior of HfB2 (or ZrB2) based-ultra-high temperature ceramics with silicon carbide under molecular and dissociated oxygen. [Internet] [Doctoral dissertation]. Limoges; 2018. [cited 2019 Feb 18]. Available from: http://www.theses.fr/2018LIMO0093.

Council of Science Editors:

Piriou C. Etude du comportement à l'oxydation de céramiques ultra-réfractaires à base de diborure d'hafnium (ou zirconium) et de carbure de silicium sous oxygène moléculaire et dissocié : Study of the oxidation behavior of HfB2 (or ZrB2) based-ultra-high temperature ceramics with silicon carbide under molecular and dissociated oxygen. [Doctoral Dissertation]. Limoges; 2018. Available from: http://www.theses.fr/2018LIMO0093


Université de Bordeaux I

30. Jacques, Elodie. Assemblage de composites SiCf/SiC de fine épaisseur : recherche d’une composition de joint et d’un procédé associé : Joining of thin SiC/SiC composites for high temperature applications : development of a joint composition and an associated elaboration process.

Degree: Docteur es, Physico-Chimie de la Matière Condensée, 2012, Université de Bordeaux I

Les composites à matrice céramique (CMC) SiCf/SiC sont des matériaux envisagés pour le gainage du combustible des futurs réacteurs à neutrons rapides. Une des problématiques… (more)

Subjects/Keywords: SiC; Brasage; Chauffage localisé; SiC; Brazing; Local heating

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APA (6th Edition):

Jacques, E. (2012). Assemblage de composites SiCf/SiC de fine épaisseur : recherche d’une composition de joint et d’un procédé associé : Joining of thin SiC/SiC composites for high temperature applications : development of a joint composition and an associated elaboration process. (Doctoral Dissertation). Université de Bordeaux I. Retrieved from http://www.theses.fr/2012BOR14620

Chicago Manual of Style (16th Edition):

Jacques, Elodie. “Assemblage de composites SiCf/SiC de fine épaisseur : recherche d’une composition de joint et d’un procédé associé : Joining of thin SiC/SiC composites for high temperature applications : development of a joint composition and an associated elaboration process.” 2012. Doctoral Dissertation, Université de Bordeaux I. Accessed February 18, 2019. http://www.theses.fr/2012BOR14620.

MLA Handbook (7th Edition):

Jacques, Elodie. “Assemblage de composites SiCf/SiC de fine épaisseur : recherche d’une composition de joint et d’un procédé associé : Joining of thin SiC/SiC composites for high temperature applications : development of a joint composition and an associated elaboration process.” 2012. Web. 18 Feb 2019.

Vancouver:

Jacques E. Assemblage de composites SiCf/SiC de fine épaisseur : recherche d’une composition de joint et d’un procédé associé : Joining of thin SiC/SiC composites for high temperature applications : development of a joint composition and an associated elaboration process. [Internet] [Doctoral dissertation]. Université de Bordeaux I; 2012. [cited 2019 Feb 18]. Available from: http://www.theses.fr/2012BOR14620.

Council of Science Editors:

Jacques E. Assemblage de composites SiCf/SiC de fine épaisseur : recherche d’une composition de joint et d’un procédé associé : Joining of thin SiC/SiC composites for high temperature applications : development of a joint composition and an associated elaboration process. [Doctoral Dissertation]. Université de Bordeaux I; 2012. Available from: http://www.theses.fr/2012BOR14620

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