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You searched for subject:( SiC semiconductors). Showing records 1 – 10 of 10 total matches.

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University of Pretoria

1. Paradzah, Alexander Tapera. Electrical characterisation of particle irradiated 4H-SiC.

Degree: MSc, Physics, 2014, University of Pretoria

 Silicon Carbide is a wide bandgap semiconductor with excellent physical and opto-electrical properties. Among these excellent properties are its radiation hardness, high temperature operation and… (more)

Subjects/Keywords: 4H-SiC; Irradiation; Electrical characterization; DLTS; Semiconductors; UCTD

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APA (6th Edition):

Paradzah, A. T. (2014). Electrical characterisation of particle irradiated 4H-SiC. (Masters Thesis). University of Pretoria. Retrieved from http://hdl.handle.net/2263/43220

Chicago Manual of Style (16th Edition):

Paradzah, Alexander Tapera. “Electrical characterisation of particle irradiated 4H-SiC.” 2014. Masters Thesis, University of Pretoria. Accessed February 15, 2019. http://hdl.handle.net/2263/43220.

MLA Handbook (7th Edition):

Paradzah, Alexander Tapera. “Electrical characterisation of particle irradiated 4H-SiC.” 2014. Web. 15 Feb 2019.

Vancouver:

Paradzah AT. Electrical characterisation of particle irradiated 4H-SiC. [Internet] [Masters thesis]. University of Pretoria; 2014. [cited 2019 Feb 15]. Available from: http://hdl.handle.net/2263/43220.

Council of Science Editors:

Paradzah AT. Electrical characterisation of particle irradiated 4H-SiC. [Masters Thesis]. University of Pretoria; 2014. Available from: http://hdl.handle.net/2263/43220

2. Igor Saulo Santos de Oliveira. Estudo ab initio de impurezas de B e N em nanofios de SiC.

Degree: 2008, Federal University of Uberlândia

Neste trabalho foi realizado um estudo da estabilidade e das propriedades eletrônicas e estruturais de nanofios de SiC crescidos nas direções (100) e (111). Foram… (more)

Subjects/Keywords: Teoria do funcional de densidade; Nanofios; SiC; Impurezas; Semicondutores; FISICA; Density functional theory; Nanowires; SiC; Impurities; Semiconductors

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APA (6th Edition):

Oliveira, I. S. S. d. (2008). Estudo ab initio de impurezas de B e N em nanofios de SiC. (Thesis). Federal University of Uberlândia. Retrieved from http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2097 ; http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2096 ; http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2098 ; http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2099

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Oliveira, Igor Saulo Santos de. “Estudo ab initio de impurezas de B e N em nanofios de SiC.” 2008. Thesis, Federal University of Uberlândia. Accessed February 15, 2019. http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2097 ; http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2096 ; http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2098 ; http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2099.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Oliveira, Igor Saulo Santos de. “Estudo ab initio de impurezas de B e N em nanofios de SiC.” 2008. Web. 15 Feb 2019.

Vancouver:

Oliveira ISSd. Estudo ab initio de impurezas de B e N em nanofios de SiC. [Internet] [Thesis]. Federal University of Uberlândia; 2008. [cited 2019 Feb 15]. Available from: http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2097 ; http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2096 ; http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2098 ; http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2099.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Oliveira ISSd. Estudo ab initio de impurezas de B e N em nanofios de SiC. [Thesis]. Federal University of Uberlândia; 2008. Available from: http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2097 ; http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2096 ; http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2098 ; http://www.bdtd.ufu.br//tde_busca/arquivo.php?codArquivo=2099

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Ontario Institute of Technology

3. Attia, Yosra. Performance of wide band gap switching devices in DC/DC converters of electric vehicles.

Degree: 2016, University of Ontario Institute of Technology

 Low losses fast switching wide band gap (WBG) semiconductors, such as Gallium Nitride (GaN) and Silicon Carbide (SiC), are becoming viable candidates for DC/DC converters… (more)

Subjects/Keywords: Electric vehicles; WBG semiconductors; GaN on Si cascode; SiC ACCUFET; Hybrid module

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APA (6th Edition):

Attia, Y. (2016). Performance of wide band gap switching devices in DC/DC converters of electric vehicles. (Thesis). University of Ontario Institute of Technology. Retrieved from http://hdl.handle.net/10155/727

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Attia, Yosra. “Performance of wide band gap switching devices in DC/DC converters of electric vehicles.” 2016. Thesis, University of Ontario Institute of Technology. Accessed February 15, 2019. http://hdl.handle.net/10155/727.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Attia, Yosra. “Performance of wide band gap switching devices in DC/DC converters of electric vehicles.” 2016. Web. 15 Feb 2019.

Vancouver:

Attia Y. Performance of wide band gap switching devices in DC/DC converters of electric vehicles. [Internet] [Thesis]. University of Ontario Institute of Technology; 2016. [cited 2019 Feb 15]. Available from: http://hdl.handle.net/10155/727.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Attia Y. Performance of wide band gap switching devices in DC/DC converters of electric vehicles. [Thesis]. University of Ontario Institute of Technology; 2016. Available from: http://hdl.handle.net/10155/727

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


George Mason University

4. Gowda, Madhu H. Optical Characterization of Wide-band gap Bulk crystals and Epitaxial layers .

Degree: 2008, George Mason University

 This dissertation describes the non-destructive optical characterization of undoped/doped GaN and SiC bulk crystals and epitaxial layers. These materials have applications for optoelectronic devices that… (more)

Subjects/Keywords: Luminescence; SiC; Characterization; GaN; Impurities; Semiconductors

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APA (6th Edition):

Gowda, M. H. (2008). Optical Characterization of Wide-band gap Bulk crystals and Epitaxial layers . (Thesis). George Mason University. Retrieved from http://hdl.handle.net/1920/3349

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gowda, Madhu H. “Optical Characterization of Wide-band gap Bulk crystals and Epitaxial layers .” 2008. Thesis, George Mason University. Accessed February 15, 2019. http://hdl.handle.net/1920/3349.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gowda, Madhu H. “Optical Characterization of Wide-band gap Bulk crystals and Epitaxial layers .” 2008. Web. 15 Feb 2019.

Vancouver:

Gowda MH. Optical Characterization of Wide-band gap Bulk crystals and Epitaxial layers . [Internet] [Thesis]. George Mason University; 2008. [cited 2019 Feb 15]. Available from: http://hdl.handle.net/1920/3349.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gowda MH. Optical Characterization of Wide-band gap Bulk crystals and Epitaxial layers . [Thesis]. George Mason University; 2008. Available from: http://hdl.handle.net/1920/3349

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Rochester Institute of Technology

5. Mukherjee, Sankha. A physics-based model of SiC-based MESFETs.

Degree: Microelectronic Engineering, 2004, Rochester Institute of Technology

 Silicon Carbide (SiC) has been investigated as an alternative material to Silicon (Si) for enhancing the power-handling capability of semiconductor devices for simultaneous high-temperature and… (more)

Subjects/Keywords: Electrical engineering; Semiconductors; SiC MESFET; Thermal conductivity; Thesis; Trapping and detrapping

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APA (6th Edition):

Mukherjee, S. (2004). A physics-based model of SiC-based MESFETs. (Thesis). Rochester Institute of Technology. Retrieved from https://scholarworks.rit.edu/theses/7282

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Mukherjee, Sankha. “A physics-based model of SiC-based MESFETs.” 2004. Thesis, Rochester Institute of Technology. Accessed February 15, 2019. https://scholarworks.rit.edu/theses/7282.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Mukherjee, Sankha. “A physics-based model of SiC-based MESFETs.” 2004. Web. 15 Feb 2019.

Vancouver:

Mukherjee S. A physics-based model of SiC-based MESFETs. [Internet] [Thesis]. Rochester Institute of Technology; 2004. [cited 2019 Feb 15]. Available from: https://scholarworks.rit.edu/theses/7282.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Mukherjee S. A physics-based model of SiC-based MESFETs. [Thesis]. Rochester Institute of Technology; 2004. Available from: https://scholarworks.rit.edu/theses/7282

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

6. Kuzdas, Jan. Nové koncepce výkonových pulsních měničů s použitím extrémně rychlých spínacích polovodičů na bázi karbidu křemíku .

Degree: 2014, Brno University of Technology

 Tato práce se zabývá problematikou pulzních měničů velkého výkonu (desítky kW) při použití nových polovodičů z karbidu křemíků (SiC). Nejprve je analyzován současný stav dané… (more)

Subjects/Keywords: DC/DC měnič velkého výkonu; propustný měnič; polovodiče SiC; ringing; impulsní transformátor; rozptyl; vysoká spínací frekvence.; High power DC/DC converter; buck converter; SiC semiconductors; ringing; pulse transformer; leakage; high switching frequency.

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APA (6th Edition):

Kuzdas, J. (2014). Nové koncepce výkonových pulsních měničů s použitím extrémně rychlých spínacích polovodičů na bázi karbidu křemíku . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/35652

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Kuzdas, Jan. “Nové koncepce výkonových pulsních měničů s použitím extrémně rychlých spínacích polovodičů na bázi karbidu křemíku .” 2014. Thesis, Brno University of Technology. Accessed February 15, 2019. http://hdl.handle.net/11012/35652.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Kuzdas, Jan. “Nové koncepce výkonových pulsních měničů s použitím extrémně rychlých spínacích polovodičů na bázi karbidu křemíku .” 2014. Web. 15 Feb 2019.

Vancouver:

Kuzdas J. Nové koncepce výkonových pulsních měničů s použitím extrémně rychlých spínacích polovodičů na bázi karbidu křemíku . [Internet] [Thesis]. Brno University of Technology; 2014. [cited 2019 Feb 15]. Available from: http://hdl.handle.net/11012/35652.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Kuzdas J. Nové koncepce výkonových pulsních měničů s použitím extrémně rychlých spínacích polovodičů na bázi karbidu křemíku . [Thesis]. Brno University of Technology; 2014. Available from: http://hdl.handle.net/11012/35652

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Brno University of Technology

7. Pazdera, Ivo. Průmyslové čerpadlo s integrovaným elektromagnetickým systémem .

Degree: 2013, Brno University of Technology

 Tato práce je zaměřena konstrukci DC/AC střídače s použitím progresivní polovodičové technologie SiC s novou topologií výstupního filtru. Výzkum a následný vývoj tohoto měniče byl… (more)

Subjects/Keywords: SiC polovodiče; nekonvenční filtr DC/AC měniče; vysoká spínací frekvence; zkreslení PWM; ochranná doba tranzistoru; bez-ucpávkové čerpadlo; diskový synchronní motor; aktivní magnetické ložisko.; SiC semiconductors; non-conventional filter of a DC/AC converter; high switching frequency; PWM distortion; dead-time; radial sealless pump; disk synchronous three-phase motor; active magnetic bearing.

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APA (6th Edition):

Pazdera, I. (2013). Průmyslové čerpadlo s integrovaným elektromagnetickým systémem . (Thesis). Brno University of Technology. Retrieved from http://hdl.handle.net/11012/24774

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Pazdera, Ivo. “Průmyslové čerpadlo s integrovaným elektromagnetickým systémem .” 2013. Thesis, Brno University of Technology. Accessed February 15, 2019. http://hdl.handle.net/11012/24774.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Pazdera, Ivo. “Průmyslové čerpadlo s integrovaným elektromagnetickým systémem .” 2013. Web. 15 Feb 2019.

Vancouver:

Pazdera I. Průmyslové čerpadlo s integrovaným elektromagnetickým systémem . [Internet] [Thesis]. Brno University of Technology; 2013. [cited 2019 Feb 15]. Available from: http://hdl.handle.net/11012/24774.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Pazdera I. Průmyslové čerpadlo s integrovaným elektromagnetickým systémem . [Thesis]. Brno University of Technology; 2013. Available from: http://hdl.handle.net/11012/24774

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

8. ΠΕΤΑΛΑΣ, ΙΩΑΝΝΗΣ. ΜΕΛΕΤΗ ΤΩΝ ΟΠΤΙΚΩΝ ΙΔΙΟΤΗΤΩΝ ΚΡΥΣΤΑΛΛΙΚΩΝ (SIC, GAN) ΚΑΙ ΑΜΟΡΦΩΝ (SIN) ΥΛΙΚΩΝ ΕΥΡΕΩΣ ΕΝΕΡΓΕΙΑΚΟΥ ΧΑΣΜΑΤΟΣ.

Degree: 1995, Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); Aristotle University Of Thessaloniki (AUTH)

ΤΟ ΑΝΤΙΚΕΙΜΕΝΟ ΤΗΣ ΔΙΑΤΡΙΒΗΣ ΕΙΝΑΙ Η ΜΕΛΕΤΗ ΤΩΝ ΟΠΤΙΚΩΝ ΙΔΙΟΤΗΤΩΝ ΤΩΝ ΚΥΒΙΚΩΝ ΚΑΙ ΕΞΑΓΩΝΙΚΩΝ ΠΟΛΥΤΥΠΩΝ ΤΩΝ ΚΡΥΣΤΑΛΛΙΚΩΝ ΗΜΙΑΓΩΓΩΝ ΕΥΡΕΩΣ ΧΑΣΜΑΤΟΣ SIC ΚΑΙ GAN ΚΑΘΩΣ ΚΑΙ… (more)

Subjects/Keywords: Dielectric function; Ellipsometry; GaN; Insulators; Semiconductors; SIC; Sin; Synchrotron radiation; Ακτινοβολία συγχρότρου; Άμορφα υλικά; Διηλεκτρική συνάρτηση; Ελλειψομετρία; Ημιαγωγοί; ΚΡΥΣΤΑΛΛΙΚΑ ΥΛΙΚΑ; Μονωτές

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APA (6th Edition):

ΠΕΤΑΛΑΣ, . (1995). ΜΕΛΕΤΗ ΤΩΝ ΟΠΤΙΚΩΝ ΙΔΙΟΤΗΤΩΝ ΚΡΥΣΤΑΛΛΙΚΩΝ (SIC, GAN) ΚΑΙ ΑΜΟΡΦΩΝ (SIN) ΥΛΙΚΩΝ ΕΥΡΕΩΣ ΕΝΕΡΓΕΙΑΚΟΥ ΧΑΣΜΑΤΟΣ. (Thesis). Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); Aristotle University Of Thessaloniki (AUTH). Retrieved from http://hdl.handle.net/10442/hedi/8997

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

ΠΕΤΑΛΑΣ, ΙΩΑΝΝΗΣ. “ΜΕΛΕΤΗ ΤΩΝ ΟΠΤΙΚΩΝ ΙΔΙΟΤΗΤΩΝ ΚΡΥΣΤΑΛΛΙΚΩΝ (SIC, GAN) ΚΑΙ ΑΜΟΡΦΩΝ (SIN) ΥΛΙΚΩΝ ΕΥΡΕΩΣ ΕΝΕΡΓΕΙΑΚΟΥ ΧΑΣΜΑΤΟΣ.” 1995. Thesis, Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); Aristotle University Of Thessaloniki (AUTH). Accessed February 15, 2019. http://hdl.handle.net/10442/hedi/8997.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

ΠΕΤΑΛΑΣ, ΙΩΑΝΝΗΣ. “ΜΕΛΕΤΗ ΤΩΝ ΟΠΤΙΚΩΝ ΙΔΙΟΤΗΤΩΝ ΚΡΥΣΤΑΛΛΙΚΩΝ (SIC, GAN) ΚΑΙ ΑΜΟΡΦΩΝ (SIN) ΥΛΙΚΩΝ ΕΥΡΕΩΣ ΕΝΕΡΓΕΙΑΚΟΥ ΧΑΣΜΑΤΟΣ.” 1995. Web. 15 Feb 2019.

Vancouver:

ΠΕΤΑΛΑΣ . ΜΕΛΕΤΗ ΤΩΝ ΟΠΤΙΚΩΝ ΙΔΙΟΤΗΤΩΝ ΚΡΥΣΤΑΛΛΙΚΩΝ (SIC, GAN) ΚΑΙ ΑΜΟΡΦΩΝ (SIN) ΥΛΙΚΩΝ ΕΥΡΕΩΣ ΕΝΕΡΓΕΙΑΚΟΥ ΧΑΣΜΑΤΟΣ. [Internet] [Thesis]. Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); Aristotle University Of Thessaloniki (AUTH); 1995. [cited 2019 Feb 15]. Available from: http://hdl.handle.net/10442/hedi/8997.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

ΠΕΤΑΛΑΣ . ΜΕΛΕΤΗ ΤΩΝ ΟΠΤΙΚΩΝ ΙΔΙΟΤΗΤΩΝ ΚΡΥΣΤΑΛΛΙΚΩΝ (SIC, GAN) ΚΑΙ ΑΜΟΡΦΩΝ (SIN) ΥΛΙΚΩΝ ΕΥΡΕΩΣ ΕΝΕΡΓΕΙΑΚΟΥ ΧΑΣΜΑΤΟΣ. [Thesis]. Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); Aristotle University Of Thessaloniki (AUTH); 1995. Available from: http://hdl.handle.net/10442/hedi/8997

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Georgia Tech

9. Hass, Joanna R. Structural characterization of epitaxial graphene on silicon carbide.

Degree: PhD, Physics, 2008, Georgia Tech

 Graphene, a single sheet of carbon atoms sp2-bonded in a honeycomb lattice, is a possible all-carbon successor to silicon electronics. Ballistic conduction at room temperature… (more)

Subjects/Keywords: Graphene; Epitaxial graphene; X-ray diffraction; STM; SiC; Epitaxy; Silicon carbide; Metal oxide semiconductors, Complementary Design and construction; Carbon and graphite products; Crystal lattices

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APA (6th Edition):

Hass, J. R. (2008). Structural characterization of epitaxial graphene on silicon carbide. (Doctoral Dissertation). Georgia Tech. Retrieved from http://hdl.handle.net/1853/26654

Chicago Manual of Style (16th Edition):

Hass, Joanna R. “Structural characterization of epitaxial graphene on silicon carbide.” 2008. Doctoral Dissertation, Georgia Tech. Accessed February 15, 2019. http://hdl.handle.net/1853/26654.

MLA Handbook (7th Edition):

Hass, Joanna R. “Structural characterization of epitaxial graphene on silicon carbide.” 2008. Web. 15 Feb 2019.

Vancouver:

Hass JR. Structural characterization of epitaxial graphene on silicon carbide. [Internet] [Doctoral dissertation]. Georgia Tech; 2008. [cited 2019 Feb 15]. Available from: http://hdl.handle.net/1853/26654.

Council of Science Editors:

Hass JR. Structural characterization of epitaxial graphene on silicon carbide. [Doctoral Dissertation]. Georgia Tech; 2008. Available from: http://hdl.handle.net/1853/26654


Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

10. Gkanatsiou, Alexandra. Study of nanostructures and interfaces of technological materials by means of electron microscopy techniques.

Degree: 2016, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ)

Τhe main objective of this thesis concerns the structural characterization, using conventional, high resolution and other advanced electron microscopy techniques, of (a) 4H-SiC epilayers homoepitaxially… (more)

Subjects/Keywords: Νιτρίδια III-V; Δομικές ατέλειες; Ετεροεπιταξία; Τρανζίστορ υψηλής ευκινησίας; Πολυστρωματικές δομές ημιαγωγών; Νανοδομές ημιαγωγών; Ηλεκτρονική μικροσκοπία διέλευσης; Ηλεκτρονική μικροσκοπία σάρωσης-διέλευσης; Ηλεκτρονική μικροσκοπία υψηλής διακριτικής ικανότητας; Καρβίδιο του πυριτίου; Ομοεπιταξία; III-V nitrides; Structural defects; Heteroepitaxy; High electron mobility transistor (HEMT); Multilayer structures of semiconductors; Nanostructures; Transmission electron microscopy; Scanning transmission electron microscopy (STEM); High resolution electron microscopy (HRTEM); Silicon carbide (SiC); Homoepitaxy

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APA (6th Edition):

Gkanatsiou, A. (2016). Study of nanostructures and interfaces of technological materials by means of electron microscopy techniques. (Thesis). Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Retrieved from http://hdl.handle.net/10442/hedi/39752

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gkanatsiou, Alexandra. “Study of nanostructures and interfaces of technological materials by means of electron microscopy techniques.” 2016. Thesis, Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ). Accessed February 15, 2019. http://hdl.handle.net/10442/hedi/39752.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gkanatsiou, Alexandra. “Study of nanostructures and interfaces of technological materials by means of electron microscopy techniques.” 2016. Web. 15 Feb 2019.

Vancouver:

Gkanatsiou A. Study of nanostructures and interfaces of technological materials by means of electron microscopy techniques. [Internet] [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2016. [cited 2019 Feb 15]. Available from: http://hdl.handle.net/10442/hedi/39752.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gkanatsiou A. Study of nanostructures and interfaces of technological materials by means of electron microscopy techniques. [Thesis]. Aristotle University Of Thessaloniki (AUTH); Αριστοτέλειο Πανεπιστήμιο Θεσσαλονίκης (ΑΠΘ); 2016. Available from: http://hdl.handle.net/10442/hedi/39752

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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