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You searched for subject:( Gallium arsenide semiconductors Optical properties ). Showing records 1 – 30 of 25357 total matches.

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Hong Kong University of Science and Technology

1. Tsang, Mei Sze. Optical spectroscopic study of GaNAs/GaAs quantum wells.

Degree: 2000, Hong Kong University of Science and Technology

Optical Properties of GaNxAs1-x/GaAs quantum well is investigated by temperature, excitation power and hydrostatic pressure dependence photoluminescence. We demonstrated that there are two recombination mechanisms,… (more)

Subjects/Keywords: Gallium arsenide semiconductors; Quantum wells; Semiconductors  – Optical properties; Photoluminescence

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Tsang, M. S. (2000). Optical spectroscopic study of GaNAs/GaAs quantum wells. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b686549 ; http://repository.ust.hk/ir/bitstream/1783.1-5390/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tsang, Mei Sze. “Optical spectroscopic study of GaNAs/GaAs quantum wells.” 2000. Thesis, Hong Kong University of Science and Technology. Accessed November 12, 2019. https://doi.org/10.14711/thesis-b686549 ; http://repository.ust.hk/ir/bitstream/1783.1-5390/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tsang, Mei Sze. “Optical spectroscopic study of GaNAs/GaAs quantum wells.” 2000. Web. 12 Nov 2019.

Vancouver:

Tsang MS. Optical spectroscopic study of GaNAs/GaAs quantum wells. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2000. [cited 2019 Nov 12]. Available from: https://doi.org/10.14711/thesis-b686549 ; http://repository.ust.hk/ir/bitstream/1783.1-5390/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tsang MS. Optical spectroscopic study of GaNAs/GaAs quantum wells. [Thesis]. Hong Kong University of Science and Technology; 2000. Available from: https://doi.org/10.14711/thesis-b686549 ; http://repository.ust.hk/ir/bitstream/1783.1-5390/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Hong Kong University of Science and Technology

2. Liu, Jia. Optical spectroscopic study of GaAs with dilute nitrogen doping.

Degree: 2002, Hong Kong University of Science and Technology

Optical properties of GaNAs samples with N concentration from N: 1018 cm-3 to 0.62% are investigated by different optical techniques, including temperature dependent photoluminescence (PL),… (more)

Subjects/Keywords: Gallium arsenide semiconductors; Nitrogen; Semiconductors  – Optical properties; Semiconductor doping

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APA (6th Edition):

Liu, J. (2002). Optical spectroscopic study of GaAs with dilute nitrogen doping. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b779388 ; http://repository.ust.hk/ir/bitstream/1783.1-5424/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Jia. “Optical spectroscopic study of GaAs with dilute nitrogen doping.” 2002. Thesis, Hong Kong University of Science and Technology. Accessed November 12, 2019. https://doi.org/10.14711/thesis-b779388 ; http://repository.ust.hk/ir/bitstream/1783.1-5424/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Jia. “Optical spectroscopic study of GaAs with dilute nitrogen doping.” 2002. Web. 12 Nov 2019.

Vancouver:

Liu J. Optical spectroscopic study of GaAs with dilute nitrogen doping. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2002. [cited 2019 Nov 12]. Available from: https://doi.org/10.14711/thesis-b779388 ; http://repository.ust.hk/ir/bitstream/1783.1-5424/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu J. Optical spectroscopic study of GaAs with dilute nitrogen doping. [Thesis]. Hong Kong University of Science and Technology; 2002. Available from: https://doi.org/10.14711/thesis-b779388 ; http://repository.ust.hk/ir/bitstream/1783.1-5424/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


McGill University

3. Rochemont, Pierre de. The electrical and optical characterization of MOCVD grown GaAs: ZnSe heterojunctions.

Degree: M. Eng., Department of Electrical Engineering., 1986, McGill University

Subjects/Keywords: Semiconductors  – Junctions  – Optical properties.; Gallium arsenide semiconductors; Zinc selenide.

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APA (6th Edition):

Rochemont, P. d. (1986). The electrical and optical characterization of MOCVD grown GaAs: ZnSe heterojunctions. (Masters Thesis). McGill University. Retrieved from http://digitool.library.mcgill.ca/thesisfile66009.pdf

Chicago Manual of Style (16th Edition):

Rochemont, Pierre de. “The electrical and optical characterization of MOCVD grown GaAs: ZnSe heterojunctions.” 1986. Masters Thesis, McGill University. Accessed November 12, 2019. http://digitool.library.mcgill.ca/thesisfile66009.pdf.

MLA Handbook (7th Edition):

Rochemont, Pierre de. “The electrical and optical characterization of MOCVD grown GaAs: ZnSe heterojunctions.” 1986. Web. 12 Nov 2019.

Vancouver:

Rochemont Pd. The electrical and optical characterization of MOCVD grown GaAs: ZnSe heterojunctions. [Internet] [Masters thesis]. McGill University; 1986. [cited 2019 Nov 12]. Available from: http://digitool.library.mcgill.ca/thesisfile66009.pdf.

Council of Science Editors:

Rochemont Pd. The electrical and optical characterization of MOCVD grown GaAs: ZnSe heterojunctions. [Masters Thesis]. McGill University; 1986. Available from: http://digitool.library.mcgill.ca/thesisfile66009.pdf


University of Oxford

4. Schucan, Gian-Mattia. Generation of squeezed light in semiconductors.

Degree: 1999, University of Oxford

 We present experimental studies based on all three methods by which the generation of squeezed light in semiconductors has thus far been demonstrated experimentally: Fourwave… (more)

Subjects/Keywords: 535; Cadmium compounds : Electric properties : Gallium arsenide semiconductors : Optical properties : Gallium arsenide : Derivatives

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APA (6th Edition):

Schucan, G. (1999). Generation of squeezed light in semiconductors. (Doctoral Dissertation). University of Oxford. Retrieved from http://ora.ox.ac.uk/objects/uuid:417b1d31-8d25-42db-b707-32bd460b4183 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298719

Chicago Manual of Style (16th Edition):

Schucan, Gian-Mattia. “Generation of squeezed light in semiconductors.” 1999. Doctoral Dissertation, University of Oxford. Accessed November 12, 2019. http://ora.ox.ac.uk/objects/uuid:417b1d31-8d25-42db-b707-32bd460b4183 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298719.

MLA Handbook (7th Edition):

Schucan, Gian-Mattia. “Generation of squeezed light in semiconductors.” 1999. Web. 12 Nov 2019.

Vancouver:

Schucan G. Generation of squeezed light in semiconductors. [Internet] [Doctoral dissertation]. University of Oxford; 1999. [cited 2019 Nov 12]. Available from: http://ora.ox.ac.uk/objects/uuid:417b1d31-8d25-42db-b707-32bd460b4183 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298719.

Council of Science Editors:

Schucan G. Generation of squeezed light in semiconductors. [Doctoral Dissertation]. University of Oxford; 1999. Available from: http://ora.ox.ac.uk/objects/uuid:417b1d31-8d25-42db-b707-32bd460b4183 ; http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.298719


Hong Kong University of Science and Technology

5. Wang, Yong. Research on improvement of breakdown voltage of AlGaN/GaN HEMTs grown on Si(111) substrates by MOCVD.

Degree: 2009, Hong Kong University of Science and Technology

 AlGaN/GaN HEMTs grown οn Si substrates are very promising in commercial applications of RF power devices and high-breakdown switchers, with the combined advantages of high… (more)

Subjects/Keywords: Microwave transistors; Gallium nitride  – Electric properties; Gallium arsenide semiconductors

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APA (6th Edition):

Wang, Y. (2009). Research on improvement of breakdown voltage of AlGaN/GaN HEMTs grown on Si(111) substrates by MOCVD. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1097804 ; http://repository.ust.hk/ir/bitstream/1783.1-6509/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Yong. “Research on improvement of breakdown voltage of AlGaN/GaN HEMTs grown on Si(111) substrates by MOCVD.” 2009. Thesis, Hong Kong University of Science and Technology. Accessed November 12, 2019. https://doi.org/10.14711/thesis-b1097804 ; http://repository.ust.hk/ir/bitstream/1783.1-6509/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Yong. “Research on improvement of breakdown voltage of AlGaN/GaN HEMTs grown on Si(111) substrates by MOCVD.” 2009. Web. 12 Nov 2019.

Vancouver:

Wang Y. Research on improvement of breakdown voltage of AlGaN/GaN HEMTs grown on Si(111) substrates by MOCVD. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2009. [cited 2019 Nov 12]. Available from: https://doi.org/10.14711/thesis-b1097804 ; http://repository.ust.hk/ir/bitstream/1783.1-6509/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang Y. Research on improvement of breakdown voltage of AlGaN/GaN HEMTs grown on Si(111) substrates by MOCVD. [Thesis]. Hong Kong University of Science and Technology; 2009. Available from: https://doi.org/10.14711/thesis-b1097804 ; http://repository.ust.hk/ir/bitstream/1783.1-6509/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Nelson Mandela Metropolitan University

6. Janse van Vuuren, Arno. Radiation damage in GaAs and SiC.

Degree: MSc, Faculty of Science, 2011, Nelson Mandela Metropolitan University

 In this dissertation the microstructure and hardness of phosphorous implanted SiC and neutron irradiated SiC and GaAs have been investigated. SiC is important due to… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Janse van Vuuren, A. (2011). Radiation damage in GaAs and SiC. (Masters Thesis). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/1477

Chicago Manual of Style (16th Edition):

Janse van Vuuren, Arno. “Radiation damage in GaAs and SiC.” 2011. Masters Thesis, Nelson Mandela Metropolitan University. Accessed November 12, 2019. http://hdl.handle.net/10948/1477.

MLA Handbook (7th Edition):

Janse van Vuuren, Arno. “Radiation damage in GaAs and SiC.” 2011. Web. 12 Nov 2019.

Vancouver:

Janse van Vuuren A. Radiation damage in GaAs and SiC. [Internet] [Masters thesis]. Nelson Mandela Metropolitan University; 2011. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/10948/1477.

Council of Science Editors:

Janse van Vuuren A. Radiation damage in GaAs and SiC. [Masters Thesis]. Nelson Mandela Metropolitan University; 2011. Available from: http://hdl.handle.net/10948/1477


University of Arizona

7. LEE, YONG HEE. ROOM-TEMPERATURE OPTICAL NONLINEARITIES IN GALLIUM-ARSENIDE AND FAST OPTICAL LOGIC GATES.

Degree: 1986, University of Arizona

 This dissertation studies the physics of room-temperature optical nonlinearities in GaAs and their application to the optical logic gates. The microscopic origins of the room-temperature… (more)

Subjects/Keywords: Gallium arsenide semiconductors  – Optical properties.; Nonlinear optics.

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APA (6th Edition):

LEE, Y. H. (1986). ROOM-TEMPERATURE OPTICAL NONLINEARITIES IN GALLIUM-ARSENIDE AND FAST OPTICAL LOGIC GATES. (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/183920

Chicago Manual of Style (16th Edition):

LEE, YONG HEE. “ROOM-TEMPERATURE OPTICAL NONLINEARITIES IN GALLIUM-ARSENIDE AND FAST OPTICAL LOGIC GATES. ” 1986. Doctoral Dissertation, University of Arizona. Accessed November 12, 2019. http://hdl.handle.net/10150/183920.

MLA Handbook (7th Edition):

LEE, YONG HEE. “ROOM-TEMPERATURE OPTICAL NONLINEARITIES IN GALLIUM-ARSENIDE AND FAST OPTICAL LOGIC GATES. ” 1986. Web. 12 Nov 2019.

Vancouver:

LEE YH. ROOM-TEMPERATURE OPTICAL NONLINEARITIES IN GALLIUM-ARSENIDE AND FAST OPTICAL LOGIC GATES. [Internet] [Doctoral dissertation]. University of Arizona; 1986. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/10150/183920.

Council of Science Editors:

LEE YH. ROOM-TEMPERATURE OPTICAL NONLINEARITIES IN GALLIUM-ARSENIDE AND FAST OPTICAL LOGIC GATES. [Doctoral Dissertation]. University of Arizona; 1986. Available from: http://hdl.handle.net/10150/183920


University of Arizona

8. Lowry, Curtis Wayne. Optical nonlinearities in passive and active gallium arsenide with applications to optical switching and laser instabilities.

Degree: 1993, University of Arizona

 Nonlinear optical properties of passive and active semiconductors are investigated experimentally and theoretically. Improvement of switching cycle time in optical nonlinear etalons to 40 ps… (more)

Subjects/Keywords: Nonlinear optics.; Gallium arsenide semiconductors  – Optical properties.

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APA (6th Edition):

Lowry, C. W. (1993). Optical nonlinearities in passive and active gallium arsenide with applications to optical switching and laser instabilities. (Doctoral Dissertation). University of Arizona. Retrieved from http://hdl.handle.net/10150/186295

Chicago Manual of Style (16th Edition):

Lowry, Curtis Wayne. “Optical nonlinearities in passive and active gallium arsenide with applications to optical switching and laser instabilities. ” 1993. Doctoral Dissertation, University of Arizona. Accessed November 12, 2019. http://hdl.handle.net/10150/186295.

MLA Handbook (7th Edition):

Lowry, Curtis Wayne. “Optical nonlinearities in passive and active gallium arsenide with applications to optical switching and laser instabilities. ” 1993. Web. 12 Nov 2019.

Vancouver:

Lowry CW. Optical nonlinearities in passive and active gallium arsenide with applications to optical switching and laser instabilities. [Internet] [Doctoral dissertation]. University of Arizona; 1993. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/10150/186295.

Council of Science Editors:

Lowry CW. Optical nonlinearities in passive and active gallium arsenide with applications to optical switching and laser instabilities. [Doctoral Dissertation]. University of Arizona; 1993. Available from: http://hdl.handle.net/10150/186295


Hong Kong University of Science and Technology

9. Gao, Yan. Fabrication and characterization of normal-incidence p-i-n InGaAs photodetectors grown on Si substrates.

Degree: 2011, Hong Kong University of Science and Technology

 The integration of III-V optoelectronics on silicon substrates for optical interconnection and optic fiber communication has become topical in recent years. Optical interconnection is a… (more)

Subjects/Keywords: Gallium arsenide  – Optical properties; Silicon  – Optical properties; Optoelectronic devices; Integrated optics

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APA (6th Edition):

Gao, Y. (2011). Fabrication and characterization of normal-incidence p-i-n InGaAs photodetectors grown on Si substrates. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1165772 ; http://repository.ust.hk/ir/bitstream/1783.1-7496/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gao, Yan. “Fabrication and characterization of normal-incidence p-i-n InGaAs photodetectors grown on Si substrates.” 2011. Thesis, Hong Kong University of Science and Technology. Accessed November 12, 2019. https://doi.org/10.14711/thesis-b1165772 ; http://repository.ust.hk/ir/bitstream/1783.1-7496/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gao, Yan. “Fabrication and characterization of normal-incidence p-i-n InGaAs photodetectors grown on Si substrates.” 2011. Web. 12 Nov 2019.

Vancouver:

Gao Y. Fabrication and characterization of normal-incidence p-i-n InGaAs photodetectors grown on Si substrates. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2011. [cited 2019 Nov 12]. Available from: https://doi.org/10.14711/thesis-b1165772 ; http://repository.ust.hk/ir/bitstream/1783.1-7496/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gao Y. Fabrication and characterization of normal-incidence p-i-n InGaAs photodetectors grown on Si substrates. [Thesis]. Hong Kong University of Science and Technology; 2011. Available from: https://doi.org/10.14711/thesis-b1165772 ; http://repository.ust.hk/ir/bitstream/1783.1-7496/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Oregon State University

10. Lin, Angela A. Two dimensional numerical simulation of a non-isothermal GaAs MESFET.

Degree: MS, Electrical and Computer Engineering, 1992, Oregon State University

 The low thermal conductivity of gallium arsenide compared to silicon results in self-heating effects in GaAs MESFETs that limit the electrical performance of such devices… (more)

Subjects/Keywords: Gallium arsenide semiconductors  – Thermal properties

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APA (6th Edition):

Lin, A. A. (1992). Two dimensional numerical simulation of a non-isothermal GaAs MESFET. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/37014

Chicago Manual of Style (16th Edition):

Lin, Angela A. “Two dimensional numerical simulation of a non-isothermal GaAs MESFET.” 1992. Masters Thesis, Oregon State University. Accessed November 12, 2019. http://hdl.handle.net/1957/37014.

MLA Handbook (7th Edition):

Lin, Angela A. “Two dimensional numerical simulation of a non-isothermal GaAs MESFET.” 1992. Web. 12 Nov 2019.

Vancouver:

Lin AA. Two dimensional numerical simulation of a non-isothermal GaAs MESFET. [Internet] [Masters thesis]. Oregon State University; 1992. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/1957/37014.

Council of Science Editors:

Lin AA. Two dimensional numerical simulation of a non-isothermal GaAs MESFET. [Masters Thesis]. Oregon State University; 1992. Available from: http://hdl.handle.net/1957/37014


Nelson Mandela Metropolitan University

11. Murape, Davison Munyaradzi. On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb.

Degree: PhD, Faculty of Science, 2014, Nelson Mandela Metropolitan University

 Since the development of the transistor in the Bell Telephone Laboratories in 1948 [78], the semiconductor industry has transformed the world we live in. It… (more)

Subjects/Keywords: Gallium arsenide semiconductors; Electronics

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APA (6th Edition):

Murape, D. M. (2014). On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb. (Doctoral Dissertation). Nelson Mandela Metropolitan University. Retrieved from http://hdl.handle.net/10948/d1020763

Chicago Manual of Style (16th Edition):

Murape, Davison Munyaradzi. “On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb.” 2014. Doctoral Dissertation, Nelson Mandela Metropolitan University. Accessed November 12, 2019. http://hdl.handle.net/10948/d1020763.

MLA Handbook (7th Edition):

Murape, Davison Munyaradzi. “On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb.” 2014. Web. 12 Nov 2019.

Vancouver:

Murape DM. On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb. [Internet] [Doctoral dissertation]. Nelson Mandela Metropolitan University; 2014. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/10948/d1020763.

Council of Science Editors:

Murape DM. On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb. [Doctoral Dissertation]. Nelson Mandela Metropolitan University; 2014. Available from: http://hdl.handle.net/10948/d1020763


Simon Fraser University

12. Zhang, You. Optical characterization for semi-insulating gallium arsenide.

Degree: 1990, Simon Fraser University

Subjects/Keywords: Gallium arsenide  – Optical properties.; Photoluminescence.

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APA (6th Edition):

Zhang, Y. (1990). Optical characterization for semi-insulating gallium arsenide. (Thesis). Simon Fraser University. Retrieved from http://summit.sfu.ca/item/4692

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhang, You. “Optical characterization for semi-insulating gallium arsenide.” 1990. Thesis, Simon Fraser University. Accessed November 12, 2019. http://summit.sfu.ca/item/4692.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhang, You. “Optical characterization for semi-insulating gallium arsenide.” 1990. Web. 12 Nov 2019.

Vancouver:

Zhang Y. Optical characterization for semi-insulating gallium arsenide. [Internet] [Thesis]. Simon Fraser University; 1990. [cited 2019 Nov 12]. Available from: http://summit.sfu.ca/item/4692.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhang Y. Optical characterization for semi-insulating gallium arsenide. [Thesis]. Simon Fraser University; 1990. Available from: http://summit.sfu.ca/item/4692

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Colorado School of Mines

13. Crisp, Ryan Wilhelm. Manipulation of electrical resistivity and optical properties of zinc oxide thin films grown by pulsed laser deposition and the Sol-Gel method.

Degree: MS(M.S.), Physics, 2007, Colorado School of Mines

 Adjusting and optimizing the electrical resistivity and optical transparency of transparent conducting oxides (TCOs) is critically important to the quality of many solid state devices.… (more)

Subjects/Keywords: zinc oxide; sol-gel; pulsed laser deposition; gallium arsenide; Gallium arsenide semiconductors; OPulsed laser deposition; Zinc oxide  – Optical properties

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APA (6th Edition):

Crisp, R. W. (2007). Manipulation of electrical resistivity and optical properties of zinc oxide thin films grown by pulsed laser deposition and the Sol-Gel method. (Masters Thesis). Colorado School of Mines. Retrieved from http://hdl.handle.net/11124/76831

Chicago Manual of Style (16th Edition):

Crisp, Ryan Wilhelm. “Manipulation of electrical resistivity and optical properties of zinc oxide thin films grown by pulsed laser deposition and the Sol-Gel method.” 2007. Masters Thesis, Colorado School of Mines. Accessed November 12, 2019. http://hdl.handle.net/11124/76831.

MLA Handbook (7th Edition):

Crisp, Ryan Wilhelm. “Manipulation of electrical resistivity and optical properties of zinc oxide thin films grown by pulsed laser deposition and the Sol-Gel method.” 2007. Web. 12 Nov 2019.

Vancouver:

Crisp RW. Manipulation of electrical resistivity and optical properties of zinc oxide thin films grown by pulsed laser deposition and the Sol-Gel method. [Internet] [Masters thesis]. Colorado School of Mines; 2007. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/11124/76831.

Council of Science Editors:

Crisp RW. Manipulation of electrical resistivity and optical properties of zinc oxide thin films grown by pulsed laser deposition and the Sol-Gel method. [Masters Thesis]. Colorado School of Mines; 2007. Available from: http://hdl.handle.net/11124/76831


University of Hong Kong

14. Liu, Lining. A study on the improvement of GaAs MOS devices with high-k gate dielectric.

Degree: PhD, 2017, University of Hong Kong

 Since silicon-based Metal-Oxide-Semiconductor (MOS) technology is approaching its physical limit, high-mobility semiconductors (Ge, III-V compounds, etc.) have been proposed to replace silicon. Among them, GaAs… (more)

Subjects/Keywords: Metal oxide semiconductors; Dielectrics; Gallium arsenide semiconductors

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APA (6th Edition):

Liu, L. (2017). A study on the improvement of GaAs MOS devices with high-k gate dielectric. (Doctoral Dissertation). University of Hong Kong. Retrieved from http://hdl.handle.net/10722/249877

Chicago Manual of Style (16th Edition):

Liu, Lining. “A study on the improvement of GaAs MOS devices with high-k gate dielectric.” 2017. Doctoral Dissertation, University of Hong Kong. Accessed November 12, 2019. http://hdl.handle.net/10722/249877.

MLA Handbook (7th Edition):

Liu, Lining. “A study on the improvement of GaAs MOS devices with high-k gate dielectric.” 2017. Web. 12 Nov 2019.

Vancouver:

Liu L. A study on the improvement of GaAs MOS devices with high-k gate dielectric. [Internet] [Doctoral dissertation]. University of Hong Kong; 2017. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/10722/249877.

Council of Science Editors:

Liu L. A study on the improvement of GaAs MOS devices with high-k gate dielectric. [Doctoral Dissertation]. University of Hong Kong; 2017. Available from: http://hdl.handle.net/10722/249877


University of Arizona

15. Hanson, Craig Demorest, 1956-. Demonstration of capabilities of gallium arsenide etalons for practical optical logic .

Degree: 1989, University of Arizona

 All-optical logic gates made from GaAs etalons were studied to see if they may be useful for optical computing. We have demonstrated that GaAs etalons… (more)

Subjects/Keywords: Optical data processing.; Gallium arsenide semiconductors.

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APA (6th Edition):

Hanson, Craig Demorest, 1. (1989). Demonstration of capabilities of gallium arsenide etalons for practical optical logic . (Masters Thesis). University of Arizona. Retrieved from http://hdl.handle.net/10150/277204

Chicago Manual of Style (16th Edition):

Hanson, Craig Demorest, 1956-. “Demonstration of capabilities of gallium arsenide etalons for practical optical logic .” 1989. Masters Thesis, University of Arizona. Accessed November 12, 2019. http://hdl.handle.net/10150/277204.

MLA Handbook (7th Edition):

Hanson, Craig Demorest, 1956-. “Demonstration of capabilities of gallium arsenide etalons for practical optical logic .” 1989. Web. 12 Nov 2019.

Vancouver:

Hanson, Craig Demorest 1. Demonstration of capabilities of gallium arsenide etalons for practical optical logic . [Internet] [Masters thesis]. University of Arizona; 1989. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/10150/277204.

Council of Science Editors:

Hanson, Craig Demorest 1. Demonstration of capabilities of gallium arsenide etalons for practical optical logic . [Masters Thesis]. University of Arizona; 1989. Available from: http://hdl.handle.net/10150/277204


Hong Kong University of Science and Technology

16. Jim, Kwok Lung. Numerical study of in-plane optical anisotropy for GaAs/AlAs superlattice in a uniform electric field.

Degree: 2002, Hong Kong University of Science and Technology

 The in-plane optical anisotropy for a common-atom superlattice in a uniform electric field is investigated numerically. A Hamiltonian that represents a common-atom (001)- grown superlattice… (more)

Subjects/Keywords: Gallium arsenide semiconductors  – Optical properties; Electric fields; Anisotropy  – Mathematical models; Superlattices as materials  – Optical properties

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APA (6th Edition):

Jim, K. L. (2002). Numerical study of in-plane optical anisotropy for GaAs/AlAs superlattice in a uniform electric field. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b781825 ; http://repository.ust.hk/ir/bitstream/1783.1-5427/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Jim, Kwok Lung. “Numerical study of in-plane optical anisotropy for GaAs/AlAs superlattice in a uniform electric field.” 2002. Thesis, Hong Kong University of Science and Technology. Accessed November 12, 2019. https://doi.org/10.14711/thesis-b781825 ; http://repository.ust.hk/ir/bitstream/1783.1-5427/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Jim, Kwok Lung. “Numerical study of in-plane optical anisotropy for GaAs/AlAs superlattice in a uniform electric field.” 2002. Web. 12 Nov 2019.

Vancouver:

Jim KL. Numerical study of in-plane optical anisotropy for GaAs/AlAs superlattice in a uniform electric field. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2002. [cited 2019 Nov 12]. Available from: https://doi.org/10.14711/thesis-b781825 ; http://repository.ust.hk/ir/bitstream/1783.1-5427/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Jim KL. Numerical study of in-plane optical anisotropy for GaAs/AlAs superlattice in a uniform electric field. [Thesis]. Hong Kong University of Science and Technology; 2002. Available from: https://doi.org/10.14711/thesis-b781825 ; http://repository.ust.hk/ir/bitstream/1783.1-5427/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Oregon State University

17. Schumm, Gerhard. A study of the photoresponse of semi-insulating gallium arsenide.

Degree: MS, Electrical and Computer Engineering, 1985, Oregon State University

 The photoresponse behavior of semi-insulating GaAs is investigated. The photocarrier lifetime is discussed and the influence of surface and contact recombination is taken into account.… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Schumm, G. (1985). A study of the photoresponse of semi-insulating gallium arsenide. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/40372

Chicago Manual of Style (16th Edition):

Schumm, Gerhard. “A study of the photoresponse of semi-insulating gallium arsenide.” 1985. Masters Thesis, Oregon State University. Accessed November 12, 2019. http://hdl.handle.net/1957/40372.

MLA Handbook (7th Edition):

Schumm, Gerhard. “A study of the photoresponse of semi-insulating gallium arsenide.” 1985. Web. 12 Nov 2019.

Vancouver:

Schumm G. A study of the photoresponse of semi-insulating gallium arsenide. [Internet] [Masters thesis]. Oregon State University; 1985. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/1957/40372.

Council of Science Editors:

Schumm G. A study of the photoresponse of semi-insulating gallium arsenide. [Masters Thesis]. Oregon State University; 1985. Available from: http://hdl.handle.net/1957/40372


Oregon State University

18. Yang, Fanling Hsu. Electrical properties of GaAs FET structures.

Degree: PhD, Electrical and Computer Engineering, 1983, Oregon State University

 The electrical properties of ion-implanted GaAs FET channels are investigated by two methods. First, the channel current (I) as a function of voltage (V) is… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Yang, F. H. (1983). Electrical properties of GaAs FET structures. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/40730

Chicago Manual of Style (16th Edition):

Yang, Fanling Hsu. “Electrical properties of GaAs FET structures.” 1983. Doctoral Dissertation, Oregon State University. Accessed November 12, 2019. http://hdl.handle.net/1957/40730.

MLA Handbook (7th Edition):

Yang, Fanling Hsu. “Electrical properties of GaAs FET structures.” 1983. Web. 12 Nov 2019.

Vancouver:

Yang FH. Electrical properties of GaAs FET structures. [Internet] [Doctoral dissertation]. Oregon State University; 1983. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/1957/40730.

Council of Science Editors:

Yang FH. Electrical properties of GaAs FET structures. [Doctoral Dissertation]. Oregon State University; 1983. Available from: http://hdl.handle.net/1957/40730


Oregon State University

19. Das, Utpal. Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs.

Degree: MS, Electrical and Computer Engineering, 1983, Oregon State University

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Das, U. (1983). Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/41425

Chicago Manual of Style (16th Edition):

Das, Utpal. “Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs.” 1983. Masters Thesis, Oregon State University. Accessed November 12, 2019. http://hdl.handle.net/1957/41425.

MLA Handbook (7th Edition):

Das, Utpal. “Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs.” 1983. Web. 12 Nov 2019.

Vancouver:

Das U. Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs. [Internet] [Masters thesis]. Oregon State University; 1983. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/1957/41425.

Council of Science Editors:

Das U. Some transport properties of organometallic vapour phase epitaxial Al[subscript x]Ga[subscript 1-x]As and ion-implanted GaAs. [Masters Thesis]. Oregon State University; 1983. Available from: http://hdl.handle.net/1957/41425


Oregon State University

20. Ju, Shu-ing. Design of GaAs monolithically integrated optical receiver amplifier.

Degree: MS, Electrical and Computer Engineering, 1988, Oregon State University

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Ju, S. (1988). Design of GaAs monolithically integrated optical receiver amplifier. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/40394

Chicago Manual of Style (16th Edition):

Ju, Shu-ing. “Design of GaAs monolithically integrated optical receiver amplifier.” 1988. Masters Thesis, Oregon State University. Accessed November 12, 2019. http://hdl.handle.net/1957/40394.

MLA Handbook (7th Edition):

Ju, Shu-ing. “Design of GaAs monolithically integrated optical receiver amplifier.” 1988. Web. 12 Nov 2019.

Vancouver:

Ju S. Design of GaAs monolithically integrated optical receiver amplifier. [Internet] [Masters thesis]. Oregon State University; 1988. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/1957/40394.

Council of Science Editors:

Ju S. Design of GaAs monolithically integrated optical receiver amplifier. [Masters Thesis]. Oregon State University; 1988. Available from: http://hdl.handle.net/1957/40394


Oregon State University

21. Yang, Howard C. Characteristics of semi-insulating GaAs photoconductive detectors under steady state illumination.

Degree: MS, Electrical and Computer Engineering, 1986, Oregon State University

 The optical and electrical characteristics of semi-insulating GaAs photoconductive detectors made with ohmic and Schottky contacts are studied in this thesis. Current - voltage measurements… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Yang, H. C. (1986). Characteristics of semi-insulating GaAs photoconductive detectors under steady state illumination. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/39839

Chicago Manual of Style (16th Edition):

Yang, Howard C. “Characteristics of semi-insulating GaAs photoconductive detectors under steady state illumination.” 1986. Masters Thesis, Oregon State University. Accessed November 12, 2019. http://hdl.handle.net/1957/39839.

MLA Handbook (7th Edition):

Yang, Howard C. “Characteristics of semi-insulating GaAs photoconductive detectors under steady state illumination.” 1986. Web. 12 Nov 2019.

Vancouver:

Yang HC. Characteristics of semi-insulating GaAs photoconductive detectors under steady state illumination. [Internet] [Masters thesis]. Oregon State University; 1986. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/1957/39839.

Council of Science Editors:

Yang HC. Characteristics of semi-insulating GaAs photoconductive detectors under steady state illumination. [Masters Thesis]. Oregon State University; 1986. Available from: http://hdl.handle.net/1957/39839


Oregon State University

22. Orwa, Julius O. Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions.

Degree: MS, Physics, 1989, Oregon State University

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Orwa, J. O. (1989). Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/40478

Chicago Manual of Style (16th Edition):

Orwa, Julius O. “Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions.” 1989. Masters Thesis, Oregon State University. Accessed November 12, 2019. http://hdl.handle.net/1957/40478.

MLA Handbook (7th Edition):

Orwa, Julius O. “Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions.” 1989. Web. 12 Nov 2019.

Vancouver:

Orwa JO. Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions. [Internet] [Masters thesis]. Oregon State University; 1989. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/1957/40478.

Council of Science Editors:

Orwa JO. Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions. [Masters Thesis]. Oregon State University; 1989. Available from: http://hdl.handle.net/1957/40478


Hong Kong University of Science and Technology

23. Chen, Hongwei. Fabrication technology and device simulation of enhancement-mode AlGaN/GaN transistors.

Degree: 2012, Hong Kong University of Science and Technology

 GaN based high electron mobility transistors (HEMTs) technology has witnessed rapid development during the last decade in the applications of high-frequency power amplifiers, high-efficiency power… (more)

Subjects/Keywords: Transistors; Design and construction; Gallium arsenide semiconductors

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APA (6th Edition):

Chen, H. (2012). Fabrication technology and device simulation of enhancement-mode AlGaN/GaN transistors. (Thesis). Hong Kong University of Science and Technology. Retrieved from https://doi.org/10.14711/thesis-b1198661 ; http://repository.ust.hk/ir/bitstream/1783.1-73362/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Hongwei. “Fabrication technology and device simulation of enhancement-mode AlGaN/GaN transistors.” 2012. Thesis, Hong Kong University of Science and Technology. Accessed November 12, 2019. https://doi.org/10.14711/thesis-b1198661 ; http://repository.ust.hk/ir/bitstream/1783.1-73362/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Hongwei. “Fabrication technology and device simulation of enhancement-mode AlGaN/GaN transistors.” 2012. Web. 12 Nov 2019.

Vancouver:

Chen H. Fabrication technology and device simulation of enhancement-mode AlGaN/GaN transistors. [Internet] [Thesis]. Hong Kong University of Science and Technology; 2012. [cited 2019 Nov 12]. Available from: https://doi.org/10.14711/thesis-b1198661 ; http://repository.ust.hk/ir/bitstream/1783.1-73362/1/th_redirect.html.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen H. Fabrication technology and device simulation of enhancement-mode AlGaN/GaN transistors. [Thesis]. Hong Kong University of Science and Technology; 2012. Available from: https://doi.org/10.14711/thesis-b1198661 ; http://repository.ust.hk/ir/bitstream/1783.1-73362/1/th_redirect.html

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Oregon State University

24. Kollipara, Ravindranath Tagore. Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors.

Degree: PhD, Electrical and Computer Engineering, 1991, Oregon State University

 High speed photodetectors are a necessary element in broad band digital and analog optical communication systems. In this thesis easily integrable planar high speed photodetectors… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Kollipara, R. T. (1991). Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors. (Doctoral Dissertation). Oregon State University. Retrieved from http://hdl.handle.net/1957/37481

Chicago Manual of Style (16th Edition):

Kollipara, Ravindranath Tagore. “Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors.” 1991. Doctoral Dissertation, Oregon State University. Accessed November 12, 2019. http://hdl.handle.net/1957/37481.

MLA Handbook (7th Edition):

Kollipara, Ravindranath Tagore. “Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors.” 1991. Web. 12 Nov 2019.

Vancouver:

Kollipara RT. Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors. [Internet] [Doctoral dissertation]. Oregon State University; 1991. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/1957/37481.

Council of Science Editors:

Kollipara RT. Modeling and testing of semi-insulating gallium arsenide interdigitated photodetectors. [Doctoral Dissertation]. Oregon State University; 1991. Available from: http://hdl.handle.net/1957/37481


Oregon State University

25. Chang, Chujyh. Modeling and characterization of hemt devices.

Degree: MS, Electrical and Computer Engineering, 1989, Oregon State University

 Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and AIGaAs /InGaAs High Electron Mobility Transistors were electrically characterized in order to compare the room… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Chang, C. (1989). Modeling and characterization of hemt devices. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/38452

Chicago Manual of Style (16th Edition):

Chang, Chujyh. “Modeling and characterization of hemt devices.” 1989. Masters Thesis, Oregon State University. Accessed November 12, 2019. http://hdl.handle.net/1957/38452.

MLA Handbook (7th Edition):

Chang, Chujyh. “Modeling and characterization of hemt devices.” 1989. Web. 12 Nov 2019.

Vancouver:

Chang C. Modeling and characterization of hemt devices. [Internet] [Masters thesis]. Oregon State University; 1989. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/1957/38452.

Council of Science Editors:

Chang C. Modeling and characterization of hemt devices. [Masters Thesis]. Oregon State University; 1989. Available from: http://hdl.handle.net/1957/38452


Oregon State University

26. Or, Pee-Keong. Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit.

Degree: MS, Electrical and Computer Engineering, 1987, Oregon State University

 The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Or, P. (1987). Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit. (Masters Thesis). Oregon State University. Retrieved from http://hdl.handle.net/1957/39879

Chicago Manual of Style (16th Edition):

Or, Pee-Keong. “Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit.” 1987. Masters Thesis, Oregon State University. Accessed November 12, 2019. http://hdl.handle.net/1957/39879.

MLA Handbook (7th Edition):

Or, Pee-Keong. “Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit.” 1987. Web. 12 Nov 2019.

Vancouver:

Or P. Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit. [Internet] [Masters thesis]. Oregon State University; 1987. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/1957/39879.

Council of Science Editors:

Or P. Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit. [Masters Thesis]. Oregon State University; 1987. Available from: http://hdl.handle.net/1957/39879


University of British Columbia

27. Tang, Wade Wai Chung. Semi-insulating gallium arsenide-deep trapping levels, dislocations and backgating .

Degree: 1984, University of British Columbia

 Work is reported on three topics relating to problems which hold back the development of GaAs integrated circuits. These topics are deep trapping levels in… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Tang, W. W. C. (1984). Semi-insulating gallium arsenide-deep trapping levels, dislocations and backgating . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/25141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tang, Wade Wai Chung. “Semi-insulating gallium arsenide-deep trapping levels, dislocations and backgating .” 1984. Thesis, University of British Columbia. Accessed November 12, 2019. http://hdl.handle.net/2429/25141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tang, Wade Wai Chung. “Semi-insulating gallium arsenide-deep trapping levels, dislocations and backgating .” 1984. Web. 12 Nov 2019.

Vancouver:

Tang WWC. Semi-insulating gallium arsenide-deep trapping levels, dislocations and backgating . [Internet] [Thesis]. University of British Columbia; 1984. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/2429/25141.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tang WWC. Semi-insulating gallium arsenide-deep trapping levels, dislocations and backgating . [Thesis]. University of British Columbia; 1984. Available from: http://hdl.handle.net/2429/25141

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


McGill University

28. Benzaquen, M. (Moïses). Effets sur l'As-Ga d'une bande d'impuretés à basse temperature.

Degree: MS, Department of Physics., 1984, McGill University

Subjects/Keywords: Gallium arsenide semiconductors.

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APA (6th Edition):

Benzaquen, M. (. (1984). Effets sur l'As-Ga d'une bande d'impuretés à basse temperature. (Masters Thesis). McGill University. Retrieved from http://digitool.library.mcgill.ca/thesisfile63166.pdf

Chicago Manual of Style (16th Edition):

Benzaquen, M (Moïses). “Effets sur l'As-Ga d'une bande d'impuretés à basse temperature.” 1984. Masters Thesis, McGill University. Accessed November 12, 2019. http://digitool.library.mcgill.ca/thesisfile63166.pdf.

MLA Handbook (7th Edition):

Benzaquen, M (Moïses). “Effets sur l'As-Ga d'une bande d'impuretés à basse temperature.” 1984. Web. 12 Nov 2019.

Vancouver:

Benzaquen M(. Effets sur l'As-Ga d'une bande d'impuretés à basse temperature. [Internet] [Masters thesis]. McGill University; 1984. [cited 2019 Nov 12]. Available from: http://digitool.library.mcgill.ca/thesisfile63166.pdf.

Council of Science Editors:

Benzaquen M(. Effets sur l'As-Ga d'une bande d'impuretés à basse temperature. [Masters Thesis]. McGill University; 1984. Available from: http://digitool.library.mcgill.ca/thesisfile63166.pdf


University of British Columbia

29. Hui, David C. W. Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide .

Degree: 1989, University of British Columbia

 This thesis consists of a study of several qualification techniques for SI LEC GaAs and the application of these techniques to various ingots. For use… (more)

Subjects/Keywords: Gallium arsenide semiconductors

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APA (6th Edition):

Hui, D. C. W. (1989). Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide . (Thesis). University of British Columbia. Retrieved from http://hdl.handle.net/2429/30648

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Hui, David C W. “Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide .” 1989. Thesis, University of British Columbia. Accessed November 12, 2019. http://hdl.handle.net/2429/30648.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Hui, David C W. “Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide .” 1989. Web. 12 Nov 2019.

Vancouver:

Hui DCW. Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide . [Internet] [Thesis]. University of British Columbia; 1989. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/2429/30648.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Hui DCW. Characterization of semi-insulating liquid encapsulated Czochralski gallium arsenide . [Thesis]. University of British Columbia; 1989. Available from: http://hdl.handle.net/2429/30648

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Drexel University

30. Gallo, Eric Michael. Gallium Arsenide Based Metal-Semiconductor-Metal Devices and Detectors.

Degree: 2010, Drexel University

Each year the creation and refinement of new material growth techniques give rise to novel material systems for electronic device exploration. A metal-semiconductor-metal (MSM) device… (more)

Subjects/Keywords: Electrical engineering; Gallium arsenide semiconductors; Nanowires

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APA (6th Edition):

Gallo, E. M. (2010). Gallium Arsenide Based Metal-Semiconductor-Metal Devices and Detectors. (Thesis). Drexel University. Retrieved from http://hdl.handle.net/1860/idea:6646

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gallo, Eric Michael. “Gallium Arsenide Based Metal-Semiconductor-Metal Devices and Detectors.” 2010. Thesis, Drexel University. Accessed November 12, 2019. http://hdl.handle.net/1860/idea:6646.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gallo, Eric Michael. “Gallium Arsenide Based Metal-Semiconductor-Metal Devices and Detectors.” 2010. Web. 12 Nov 2019.

Vancouver:

Gallo EM. Gallium Arsenide Based Metal-Semiconductor-Metal Devices and Detectors. [Internet] [Thesis]. Drexel University; 2010. [cited 2019 Nov 12]. Available from: http://hdl.handle.net/1860/idea:6646.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gallo EM. Gallium Arsenide Based Metal-Semiconductor-Metal Devices and Detectors. [Thesis]. Drexel University; 2010. Available from: http://hdl.handle.net/1860/idea:6646

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

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