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University of Oulu

1. Rahkola, A. (Antti). RF Pre-power Amplifier for LTE SoC.

Degree: 2018, University of Oulu

Abstract This work focused on evaluating a single-ended complementary push-pull topology for LTE system-on-chip RF pre-power amplifier, to increase power efficiency compared to an existing class-A amplifier. Suitability of the push-pull topology was studied against strict linearity specification. Frequency range in this study was 1710-2020 MHz, and 10 dBm sine wave output power was targeted. Common source and source follower amplifier variants were designed and simulated in a schematic level. Gain control functionality was implemented by dividing the amplifier into controllable partitions. Output DC-voltage was set using a common mode feedback. Source follower topology performance was severely affected by impedance gyration, which was compensated by lowering the amplifiers’ input impedance. This however dropped performance significantly, and therefore common source topology was stated to be a better choice for the pre-power amplifier. Linearity was adequate in both topologies. Schematic level common source variant simulations showed good typical performance for LTE bands 2 and 23, although design improvements were also identified. PAE over 40 % for 10 dBm sine wave was simulated, while S22 was better than -10 dB. Harmonic frequency levels were low, and OIP3 of 23 dBm was achieved. According to schematic simulations, class-A 1.8 GHz pre-power amplifier can be replaced with a complementary common source push-pull amplifier, to achieve better power efficiency.

Tiivistelmä Tässä työssä tutkittiin yksipäisen komplementaarisen push-pull topologian soveltuvuutta LTE-järjestelmäpiirin RF-esitehovahvistimeksi, parantamaan tehohyötysuhdetta verrattuna nykyiseen A-luokan vahvistimeen. Push-pull -topologian soveltuvuutta tutkittiin tiukkaa lineaarisuusvaatimusta vasten. Tutkimuksen taajuusalue oli 1710-2020 MHz, ja 10 dBm siniaaltoulostuloteho oli tavoitteena. Työssä suunniteltiin ja simuloitiin yhteislähde- ja lähdeseuraaja-vahvistinversiot piirikaaviotasolla. Vahvistimet hajautettiin aktivoitaviin osioihin vahvistuksensäätöä varten ja lähdön DC-jännite asetettiin käyttäen yhteismuotoista takaisinkytkentää. Lähdeseuraaja-topologian suorituskykyyn vaikutti haitallisesti impedanssigyraatio, jota kompensoitiin laskemalla vahvistimen tuloimpedanssia. Tämä kuitenkin laski suorituskykyä merkittävästi, ja tästä syystä yhteislähde-topologian todettiin olevan parempi vaihtoehto…

Subjects/Keywords: Electrical Engineering

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APA (6th Edition):

Rahkola, A. (. (2018). RF Pre-power Amplifier for LTE SoC. (Masters Thesis). University of Oulu. Retrieved from http://urn.fi/URN:NBN:fi:oulu-201806052447

Chicago Manual of Style (16th Edition):

Rahkola, A (Antti). “RF Pre-power Amplifier for LTE SoC.” 2018. Masters Thesis, University of Oulu. Accessed June 21, 2018. http://urn.fi/URN:NBN:fi:oulu-201806052447.

MLA Handbook (7th Edition):

Rahkola, A (Antti). “RF Pre-power Amplifier for LTE SoC.” 2018. Web. 21 Jun 2018.

Vancouver:

Rahkola A(. RF Pre-power Amplifier for LTE SoC. [Internet] [Masters thesis]. University of Oulu; 2018. [cited 2018 Jun 21]. Available from: http://urn.fi/URN:NBN:fi:oulu-201806052447.

Council of Science Editors:

Rahkola A(. RF Pre-power Amplifier for LTE SoC. [Masters Thesis]. University of Oulu; 2018. Available from: http://urn.fi/URN:NBN:fi:oulu-201806052447

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