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You searched for +publisher:"Vanderbilt University" +contributor:("Ronald D. Schrimpf"). Showing records 1 – 30 of 77 total matches.

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Vanderbilt University

1. Brewer, Rachel Mae. The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture.

Degree: MS, Electrical Engineering, 2019, Vanderbilt University

 Neuromorphic computing endeavors to imitate the way biological brains process information and problem-solves. Uses for neuromorphic computing span disciplines and include applications in image processing,… (more)

Subjects/Keywords: single event upset; single event effect; radiation effects; neuromorphic computing; image classification; TrueNorth

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APA (6th Edition):

Brewer, R. M. (2019). The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11182019-150037/ ;

Chicago Manual of Style (16th Edition):

Brewer, Rachel Mae. “The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture.” 2019. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-11182019-150037/ ;.

MLA Handbook (7th Edition):

Brewer, Rachel Mae. “The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture.” 2019. Web. 25 Feb 2020.

Vancouver:

Brewer RM. The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture. [Internet] [Masters thesis]. Vanderbilt University; 2019. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-11182019-150037/ ;.

Council of Science Editors:

Brewer RM. The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture. [Masters Thesis]. Vanderbilt University; 2019. Available from: http://etd.library.vanderbilt.edu/available/etd-11182019-150037/ ;


Vanderbilt University

2. Rezzak, Nadia. The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current.

Degree: MS, Electrical Engineering, 2010, Vanderbilt University

 Scaling of gate oxides in bulk complementary metalâoxideâsemiconductor (CMOS) devices to thinner dimensions has reduced the significance of threshold-voltage shifts due to total-ionizing dose (TID)… (more)

Subjects/Keywords: Total ionizing dose

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APA (6th Edition):

Rezzak, N. (2010). The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03312010-122226/ ;

Chicago Manual of Style (16th Edition):

Rezzak, Nadia. “The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current.” 2010. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-03312010-122226/ ;.

MLA Handbook (7th Edition):

Rezzak, Nadia. “The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current.” 2010. Web. 25 Feb 2020.

Vancouver:

Rezzak N. The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current. [Internet] [Masters thesis]. Vanderbilt University; 2010. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-03312010-122226/ ;.

Council of Science Editors:

Rezzak N. The effect of shallow trench isolation (STI) topology, sidewall doping and layout-related stress on radiation-induced leakage current. [Masters Thesis]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-03312010-122226/ ;


Vanderbilt University

3. Hughart, David Russell. The role of hydrogen in defect formation and passivation in bipolar and MOS oxides.

Degree: MS, Electrical Engineering, 2010, Vanderbilt University

 Ambient hydrogen has been shown to enhance the degradation of several types of linear bipolar devices. Recently, it has been seen that hydrogen exposure can… (more)

Subjects/Keywords: radiation effects; Aging; annealing; gated lateral bipolar transistor; hardness assurance; hydrogen; interface traps; oxide trapped charge

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APA (6th Edition):

Hughart, D. R. (2010). The role of hydrogen in defect formation and passivation in bipolar and MOS oxides. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07262010-121643/ ;

Chicago Manual of Style (16th Edition):

Hughart, David Russell. “The role of hydrogen in defect formation and passivation in bipolar and MOS oxides.” 2010. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-07262010-121643/ ;.

MLA Handbook (7th Edition):

Hughart, David Russell. “The role of hydrogen in defect formation and passivation in bipolar and MOS oxides.” 2010. Web. 25 Feb 2020.

Vancouver:

Hughart DR. The role of hydrogen in defect formation and passivation in bipolar and MOS oxides. [Internet] [Masters thesis]. Vanderbilt University; 2010. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-07262010-121643/ ;.

Council of Science Editors:

Hughart DR. The role of hydrogen in defect formation and passivation in bipolar and MOS oxides. [Masters Thesis]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-07262010-121643/ ;


Vanderbilt University

4. Chen, Jin. Radiation response and reliability of AlGaN/GaN HEMTS.

Degree: MS, Electrical Engineering, 2013, Vanderbilt University

 Gallium Nitride (GaN)-based devices are used in space-based high power, high frequency applications due to high breakdown voltage and high carrier mobility and the large… (more)

Subjects/Keywords: reliability; radiation; HEMT; 1/f noise; AlGaN/GaN

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APA (6th Edition):

Chen, J. (2013). Radiation response and reliability of AlGaN/GaN HEMTS. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-06272013-203146/ ;

Chicago Manual of Style (16th Edition):

Chen, Jin. “Radiation response and reliability of AlGaN/GaN HEMTS.” 2013. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-06272013-203146/ ;.

MLA Handbook (7th Edition):

Chen, Jin. “Radiation response and reliability of AlGaN/GaN HEMTS.” 2013. Web. 25 Feb 2020.

Vancouver:

Chen J. Radiation response and reliability of AlGaN/GaN HEMTS. [Internet] [Masters thesis]. Vanderbilt University; 2013. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-06272013-203146/ ;.

Council of Science Editors:

Chen J. Radiation response and reliability of AlGaN/GaN HEMTS. [Masters Thesis]. Vanderbilt University; 2013. Available from: http://etd.library.vanderbilt.edu/available/etd-06272013-203146/ ;


Vanderbilt University

5. Ni, Kai. A fully embedded Silicon On Insulator Total Ionizing Dose monitor.

Degree: MS, Electrical Engineering, 2013, Vanderbilt University

 Total ionizing dose (TID) effect is a kind of radiation effects. Itâs related with the charge build up in the insulator caused by the radiation.… (more)

Subjects/Keywords: silicon on insulator; buried oxide; threshold voltage shift; leakage current; current controlled oscillator; total ionizing dose

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APA (6th Edition):

Ni, K. (2013). A fully embedded Silicon On Insulator Total Ionizing Dose monitor. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07302013-093909/ ;

Chicago Manual of Style (16th Edition):

Ni, Kai. “A fully embedded Silicon On Insulator Total Ionizing Dose monitor.” 2013. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-07302013-093909/ ;.

MLA Handbook (7th Edition):

Ni, Kai. “A fully embedded Silicon On Insulator Total Ionizing Dose monitor.” 2013. Web. 25 Feb 2020.

Vancouver:

Ni K. A fully embedded Silicon On Insulator Total Ionizing Dose monitor. [Internet] [Masters thesis]. Vanderbilt University; 2013. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-07302013-093909/ ;.

Council of Science Editors:

Ni K. A fully embedded Silicon On Insulator Total Ionizing Dose monitor. [Masters Thesis]. Vanderbilt University; 2013. Available from: http://etd.library.vanderbilt.edu/available/etd-07302013-093909/ ;


Vanderbilt University

6. Dinkins, Cody Adam. Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology.

Degree: MS, Electrical Engineering, 2011, Vanderbilt University

 Single-event upsets and errors are of growing concern as technology scales toward smaller transistor sizes. While smaller transistors allow for greater on-chip integration, this comes… (more)

Subjects/Keywords: characterization; transient; latchup; single event; 180 nm

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APA (6th Edition):

Dinkins, C. A. (2011). Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-04082011-122316/ ;

Chicago Manual of Style (16th Edition):

Dinkins, Cody Adam. “Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology.” 2011. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-04082011-122316/ ;.

MLA Handbook (7th Edition):

Dinkins, Cody Adam. “Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology.” 2011. Web. 25 Feb 2020.

Vancouver:

Dinkins CA. Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology. [Internet] [Masters thesis]. Vanderbilt University; 2011. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-04082011-122316/ ;.

Council of Science Editors:

Dinkins CA. Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology. [Masters Thesis]. Vanderbilt University; 2011. Available from: http://etd.library.vanderbilt.edu/available/etd-04082011-122316/ ;


Vanderbilt University

7. Niezgoda, Jeffrey Scotten. The Implementation of Quantum Dots in Photovoltaics: From Semiconductor-Plasmon Interactions to Current Visualization.

Degree: PhD, Chemistry, 2015, Vanderbilt University

 This thesis presents two avenues through which solution processable and electronically tunable QDs are investigated as active absorbers in photovoltaic applications. First, the synthesis and… (more)

Subjects/Keywords: quantum dots; plasmons; photovoltaics; EBIC; CuInS2

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APA (6th Edition):

Niezgoda, J. S. (2015). The Implementation of Quantum Dots in Photovoltaics: From Semiconductor-Plasmon Interactions to Current Visualization. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu//available/etd-03192015-144105/ ;

Chicago Manual of Style (16th Edition):

Niezgoda, Jeffrey Scotten. “The Implementation of Quantum Dots in Photovoltaics: From Semiconductor-Plasmon Interactions to Current Visualization.” 2015. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu//available/etd-03192015-144105/ ;.

MLA Handbook (7th Edition):

Niezgoda, Jeffrey Scotten. “The Implementation of Quantum Dots in Photovoltaics: From Semiconductor-Plasmon Interactions to Current Visualization.” 2015. Web. 25 Feb 2020.

Vancouver:

Niezgoda JS. The Implementation of Quantum Dots in Photovoltaics: From Semiconductor-Plasmon Interactions to Current Visualization. [Internet] [Doctoral dissertation]. Vanderbilt University; 2015. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu//available/etd-03192015-144105/ ;.

Council of Science Editors:

Niezgoda JS. The Implementation of Quantum Dots in Photovoltaics: From Semiconductor-Plasmon Interactions to Current Visualization. [Doctoral Dissertation]. Vanderbilt University; 2015. Available from: http://etd.library.vanderbilt.edu//available/etd-03192015-144105/ ;


Vanderbilt University

8. Austin, Rebekah Ann. Modeling Radiation Risk Assessment and Mitigation for Spacecraft Electronics.

Degree: PhD, Electrical Engineering, 2019, Vanderbilt University

 Space-based missions are increasingly having to design and test systems with shorter development times and small budgets and teams. These missions additionally have a higher… (more)

Subjects/Keywords: Risk Assessment; single-event burnout; Model-Based Mission Assurance; silicon carbide; Radiation Hardness Assurance; fault propagation models

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APA (6th Edition):

Austin, R. A. (2019). Modeling Radiation Risk Assessment and Mitigation for Spacecraft Electronics. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11182019-150615/ ;

Chicago Manual of Style (16th Edition):

Austin, Rebekah Ann. “Modeling Radiation Risk Assessment and Mitigation for Spacecraft Electronics.” 2019. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-11182019-150615/ ;.

MLA Handbook (7th Edition):

Austin, Rebekah Ann. “Modeling Radiation Risk Assessment and Mitigation for Spacecraft Electronics.” 2019. Web. 25 Feb 2020.

Vancouver:

Austin RA. Modeling Radiation Risk Assessment and Mitigation for Spacecraft Electronics. [Internet] [Doctoral dissertation]. Vanderbilt University; 2019. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-11182019-150615/ ;.

Council of Science Editors:

Austin RA. Modeling Radiation Risk Assessment and Mitigation for Spacecraft Electronics. [Doctoral Dissertation]. Vanderbilt University; 2019. Available from: http://etd.library.vanderbilt.edu/available/etd-11182019-150615/ ;


Vanderbilt University

9. Francis, Sarah Ashley. Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices.

Degree: PhD, Electrical Engineering, 2011, Vanderbilt University

 Defects that lie at or near the semiconductor-oxide interface of MOS transistors were characterized using 1/f noise and charge pumping measurements. The frequency, gate-voltage, and… (more)

Subjects/Keywords: charge pumping; radiation effects; 1/f noise

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APA (6th Edition):

Francis, S. A. (2011). Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11102011-122043/ ;

Chicago Manual of Style (16th Edition):

Francis, Sarah Ashley. “Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices.” 2011. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-11102011-122043/ ;.

MLA Handbook (7th Edition):

Francis, Sarah Ashley. “Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices.” 2011. Web. 25 Feb 2020.

Vancouver:

Francis SA. Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices. [Internet] [Doctoral dissertation]. Vanderbilt University; 2011. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-11102011-122043/ ;.

Council of Science Editors:

Francis SA. Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices. [Doctoral Dissertation]. Vanderbilt University; 2011. Available from: http://etd.library.vanderbilt.edu/available/etd-11102011-122043/ ;


Vanderbilt University

10. Gadlage, Matthew John. Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies.

Degree: PhD, Electrical Engineering, 2010, Vanderbilt University

 Single-event transients (SETs) are a significant reliability issue for space-based electronic systems. A single-event transient is a radiation-induced glitch in an electronic circuit caused by… (more)

Subjects/Keywords: radiation effects; space environment; soft errors; heavy ions; single event effects; single event transients; silicon-on-insulator; temperature

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APA (6th Edition):

Gadlage, M. J. (2010). Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03262010-102121/ ;

Chicago Manual of Style (16th Edition):

Gadlage, Matthew John. “Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies.” 2010. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-03262010-102121/ ;.

MLA Handbook (7th Edition):

Gadlage, Matthew John. “Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies.” 2010. Web. 25 Feb 2020.

Vancouver:

Gadlage MJ. Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies. [Internet] [Doctoral dissertation]. Vanderbilt University; 2010. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-03262010-102121/ ;.

Council of Science Editors:

Gadlage MJ. Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies. [Doctoral Dissertation]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-03262010-102121/ ;


Vanderbilt University

11. Roy, Tania. Reliability-limiting defects in GaN/AlGaN high electron mobility transistors.

Degree: PhD, Electrical Engineering, 2011, Vanderbilt University

 The reliability of GaN/AlGaN HEMTs, fabricated using MOCVD, and MBE under Ga-rich, N-rich and ammonia-rich conditions, is studied using high field stress experiments and low… (more)

Subjects/Keywords: RF stress; Ga-N divacancy; oxygen DX center; N antisite; Ga vacancy; HEMT; GaN; DC stress; 1/f noise

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APA (6th Edition):

Roy, T. (2011). Reliability-limiting defects in GaN/AlGaN high electron mobility transistors. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-10122011-111627/ ;

Chicago Manual of Style (16th Edition):

Roy, Tania. “Reliability-limiting defects in GaN/AlGaN high electron mobility transistors.” 2011. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-10122011-111627/ ;.

MLA Handbook (7th Edition):

Roy, Tania. “Reliability-limiting defects in GaN/AlGaN high electron mobility transistors.” 2011. Web. 25 Feb 2020.

Vancouver:

Roy T. Reliability-limiting defects in GaN/AlGaN high electron mobility transistors. [Internet] [Doctoral dissertation]. Vanderbilt University; 2011. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-10122011-111627/ ;.

Council of Science Editors:

Roy T. Reliability-limiting defects in GaN/AlGaN high electron mobility transistors. [Doctoral Dissertation]. Vanderbilt University; 2011. Available from: http://etd.library.vanderbilt.edu/available/etd-10122011-111627/ ;


Vanderbilt University

12. Hooten, Nicholas C. Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events.

Degree: PhD, Electrical Engineering, 2014, Vanderbilt University

 When ionizing radiation interacts with a semiconductor device, the resulting generation and collection of excess charge carriers can result in a brief transient current at… (more)

Subjects/Keywords: SEE; single-event effects; radiation effects in microelectronics; Two-photon absorption laser testing for SEE; SEE laser testing; device-level current transients

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APA (6th Edition):

Hooten, N. C. (2014). Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03312014-121311/ ;

Chicago Manual of Style (16th Edition):

Hooten, Nicholas C. “Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events.” 2014. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-03312014-121311/ ;.

MLA Handbook (7th Edition):

Hooten, Nicholas C. “Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events.” 2014. Web. 25 Feb 2020.

Vancouver:

Hooten NC. Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events. [Internet] [Doctoral dissertation]. Vanderbilt University; 2014. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-03312014-121311/ ;.

Council of Science Editors:

Hooten NC. Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events. [Doctoral Dissertation]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-03312014-121311/ ;


Vanderbilt University

13. King, Michael Patrick. Energetic electron-induced single event upsets in static random access memory.

Degree: PhD, Electrical Engineering, 2014, Vanderbilt University

  Energy deposition in ionizing radiation events can cause errors in static random access memories (SRAMs). The resulting errors can negatively impact nominal systems operation.… (more)

Subjects/Keywords: electron-induced SEU; energetic electron; static random access memory; single-event upset; error rate predictions

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APA (6th Edition):

King, M. P. (2014). Energetic electron-induced single event upsets in static random access memory. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03242014-131749/ ;

Chicago Manual of Style (16th Edition):

King, Michael Patrick. “Energetic electron-induced single event upsets in static random access memory.” 2014. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-03242014-131749/ ;.

MLA Handbook (7th Edition):

King, Michael Patrick. “Energetic electron-induced single event upsets in static random access memory.” 2014. Web. 25 Feb 2020.

Vancouver:

King MP. Energetic electron-induced single event upsets in static random access memory. [Internet] [Doctoral dissertation]. Vanderbilt University; 2014. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-03242014-131749/ ;.

Council of Science Editors:

King MP. Energetic electron-induced single event upsets in static random access memory. [Doctoral Dissertation]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-03242014-131749/ ;


Vanderbilt University

14. Mukherjee, Shubhajit. Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs.

Degree: PhD, Interdisciplinary Materials Science, 2015, Vanderbilt University

 Gallium Nitride or GaN-based high electron mobility transistors (HEMTs) is currently the most promising device technology in several key military and civilian applications due to… (more)

Subjects/Keywords: hot electron; dehydrogenation; semi-ON; defects; GaN HEMT; degradation; EMC; DFT; k.p

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APA (6th Edition):

Mukherjee, S. (2015). Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11052015-010923/ ;

Chicago Manual of Style (16th Edition):

Mukherjee, Shubhajit. “Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs.” 2015. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-11052015-010923/ ;.

MLA Handbook (7th Edition):

Mukherjee, Shubhajit. “Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs.” 2015. Web. 25 Feb 2020.

Vancouver:

Mukherjee S. Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs. [Internet] [Doctoral dissertation]. Vanderbilt University; 2015. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-11052015-010923/ ;.

Council of Science Editors:

Mukherjee S. Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs. [Doctoral Dissertation]. Vanderbilt University; 2015. Available from: http://etd.library.vanderbilt.edu/available/etd-11052015-010923/ ;


Vanderbilt University

15. Jiang, Rong. Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 During the last three decades, GaN-based HEMTs are increasingly developed for their excellent application for high power, high frequency and radiation-tolerance. The improvements in GaN-based… (more)

Subjects/Keywords: AlGaN/GaN; HEMT; 1/f noise; hot carrier degradation; TID effects; Proton Irradiation

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APA (6th Edition):

Jiang, R. (2018). Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-01082018-190426/ ;

Chicago Manual of Style (16th Edition):

Jiang, Rong. “Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-01082018-190426/ ;.

MLA Handbook (7th Edition):

Jiang, Rong. “Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs.” 2018. Web. 25 Feb 2020.

Vancouver:

Jiang R. Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-01082018-190426/ ;.

Council of Science Editors:

Jiang R. Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-01082018-190426/ ;


Vanderbilt University

16. Trippe, James Michael. Monte Carlo methods for predicting SRAM vulnerability to muon and electron induced single event upsets.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 Stopping muons and electrons have been shown in previous work to be capable of inducing single event upsets (SEUs) in modern SRAM technologies. In order… (more)

Subjects/Keywords: Monte Carlo; Single Event Upset; Ion Beam; SRAM

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APA (6th Edition):

Trippe, J. M. (2018). Monte Carlo methods for predicting SRAM vulnerability to muon and electron induced single event upsets. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-04122018-185733/ ;

Chicago Manual of Style (16th Edition):

Trippe, James Michael. “Monte Carlo methods for predicting SRAM vulnerability to muon and electron induced single event upsets.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-04122018-185733/ ;.

MLA Handbook (7th Edition):

Trippe, James Michael. “Monte Carlo methods for predicting SRAM vulnerability to muon and electron induced single event upsets.” 2018. Web. 25 Feb 2020.

Vancouver:

Trippe JM. Monte Carlo methods for predicting SRAM vulnerability to muon and electron induced single event upsets. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-04122018-185733/ ;.

Council of Science Editors:

Trippe JM. Monte Carlo methods for predicting SRAM vulnerability to muon and electron induced single event upsets. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-04122018-185733/ ;


Vanderbilt University

17. Duan, Guoxing. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.

Degree: PhD, Electrical Engineering, 2016, Vanderbilt University

 The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases has been evaluated. Negative bias irradiation leads to the worst-case degradation.… (more)

Subjects/Keywords: HfO2; SiGe; low frequency noise; NBTI; TID

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APA (6th Edition):

Duan, G. (2016). Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;

Chicago Manual of Style (16th Edition):

Duan, Guoxing. “Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.” 2016. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;.

MLA Handbook (7th Edition):

Duan, Guoxing. “Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.” 2016. Web. 25 Feb 2020.

Vancouver:

Duan G. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. [Internet] [Doctoral dissertation]. Vanderbilt University; 2016. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;.

Council of Science Editors:

Duan G. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. [Doctoral Dissertation]. Vanderbilt University; 2016. Available from: http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;


Vanderbilt University

18. Kiddie, Bradley Thomas. Single-Event Multiple-Transient Characterization and Mitigation via Standard Cell Placement Methods.

Degree: PhD, Electrical Engineering, 2016, Vanderbilt University

 The effects of radiation on the operation of integrated circuits (IC) continue to take a more important role as technology feature sizes scale down, critical… (more)

Subjects/Keywords: reliability; radiation; eda; single-event transient; single-event multiple-transient; placement; algorithm

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APA (6th Edition):

Kiddie, B. T. (2016). Single-Event Multiple-Transient Characterization and Mitigation via Standard Cell Placement Methods. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-09282016-101105/ ;

Chicago Manual of Style (16th Edition):

Kiddie, Bradley Thomas. “Single-Event Multiple-Transient Characterization and Mitigation via Standard Cell Placement Methods.” 2016. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-09282016-101105/ ;.

MLA Handbook (7th Edition):

Kiddie, Bradley Thomas. “Single-Event Multiple-Transient Characterization and Mitigation via Standard Cell Placement Methods.” 2016. Web. 25 Feb 2020.

Vancouver:

Kiddie BT. Single-Event Multiple-Transient Characterization and Mitigation via Standard Cell Placement Methods. [Internet] [Doctoral dissertation]. Vanderbilt University; 2016. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-09282016-101105/ ;.

Council of Science Editors:

Kiddie BT. Single-Event Multiple-Transient Characterization and Mitigation via Standard Cell Placement Methods. [Doctoral Dissertation]. Vanderbilt University; 2016. Available from: http://etd.library.vanderbilt.edu/available/etd-09282016-101105/ ;


Vanderbilt University

19. Zhang, Hangfang. Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 Modern ICs need to be designed with proper designer-controllable factors to meet power, speed and single-event (SE) performance requirements in different applications. Commercial fabrication houses… (more)

Subjects/Keywords: Single Event; Threshold Voltage; FinFET; Design Parameter; Temperature; Angular Incidence; Flip-Flop; Well Structure

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APA (6th Edition):

Zhang, H. (2018). Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-04072018-123506/ ;

Chicago Manual of Style (16th Edition):

Zhang, Hangfang. “Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-04072018-123506/ ;.

MLA Handbook (7th Edition):

Zhang, Hangfang. “Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies.” 2018. Web. 25 Feb 2020.

Vancouver:

Zhang H. Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-04072018-123506/ ;.

Council of Science Editors:

Zhang H. Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-04072018-123506/ ;


Vanderbilt University

20. Wang, Pan. RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS.

Degree: PhD, Electrical Engineering, 2019, Vanderbilt University

 Metal oxide semiconductor field effect transistors (MOSFETs) are the building blocks of modern integrated circuits. The semiconductor industry needs to continue scaling the dimensions of… (more)

Subjects/Keywords: Defects; Low frequency noise; Radiation Effects; Microelectronic devices; Two dimensional materials

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APA (6th Edition):

Wang, P. (2019). RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07192019-104923/ ;

Chicago Manual of Style (16th Edition):

Wang, Pan. “RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS.” 2019. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-07192019-104923/ ;.

MLA Handbook (7th Edition):

Wang, Pan. “RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS.” 2019. Web. 25 Feb 2020.

Vancouver:

Wang P. RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS. [Internet] [Doctoral dissertation]. Vanderbilt University; 2019. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-07192019-104923/ ;.

Council of Science Editors:

Wang P. RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS. [Doctoral Dissertation]. Vanderbilt University; 2019. Available from: http://etd.library.vanderbilt.edu/available/etd-07192019-104923/ ;


Vanderbilt University

21. Kauppila, Amy Vaughn. Analysis of parameter variation impact on the single event response in sub-100nm CMOS storage cells.

Degree: PhD, Electrical Engineering, 2012, Vanderbilt University

 Current deep sub-micron technologies are particularly susceptible to single events. The challenge derives from a conglomeration of effects that affect circuitsâ radiation response. For instance,… (more)

Subjects/Keywords: single event upset; parameter variation

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APA (6th Edition):

Kauppila, A. V. (2012). Analysis of parameter variation impact on the single event response in sub-100nm CMOS storage cells. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-04092012-111410/ ;

Chicago Manual of Style (16th Edition):

Kauppila, Amy Vaughn. “Analysis of parameter variation impact on the single event response in sub-100nm CMOS storage cells.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-04092012-111410/ ;.

MLA Handbook (7th Edition):

Kauppila, Amy Vaughn. “Analysis of parameter variation impact on the single event response in sub-100nm CMOS storage cells.” 2012. Web. 25 Feb 2020.

Vancouver:

Kauppila AV. Analysis of parameter variation impact on the single event response in sub-100nm CMOS storage cells. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-04092012-111410/ ;.

Council of Science Editors:

Kauppila AV. Analysis of parameter variation impact on the single event response in sub-100nm CMOS storage cells. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://etd.library.vanderbilt.edu/available/etd-04092012-111410/ ;


Vanderbilt University

22. Auden, Elizabeth Catherine. Heavy Ion-Induced Single Particle Displacement Damage in Silicon.

Degree: PhD, Electrical Engineering, 2013, Vanderbilt University

 Displacement damage from individual heavy ions results in discrete, measurable electrical degradation in 252Cf-irradiated silicon diodes. This work presents measurements of discrete increases in diode… (more)

Subjects/Keywords: single event effects; single event displacement damage; Shockley-Read-Hall generation; radiation effects; JFET diodes; leakage current; ions; generation region; fission fragments; femtoampere current measurements; electric field enhancement; displacement damage; diodes; depletion region; defects; defect density; current steps; current pulses; californium; single particle displacement damage

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APA (6th Edition):

Auden, E. C. (2013). Heavy Ion-Induced Single Particle Displacement Damage in Silicon. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11212013-144624/ ;

Chicago Manual of Style (16th Edition):

Auden, Elizabeth Catherine. “Heavy Ion-Induced Single Particle Displacement Damage in Silicon.” 2013. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-11212013-144624/ ;.

MLA Handbook (7th Edition):

Auden, Elizabeth Catherine. “Heavy Ion-Induced Single Particle Displacement Damage in Silicon.” 2013. Web. 25 Feb 2020.

Vancouver:

Auden EC. Heavy Ion-Induced Single Particle Displacement Damage in Silicon. [Internet] [Doctoral dissertation]. Vanderbilt University; 2013. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-11212013-144624/ ;.

Council of Science Editors:

Auden EC. Heavy Ion-Induced Single Particle Displacement Damage in Silicon. [Doctoral Dissertation]. Vanderbilt University; 2013. Available from: http://etd.library.vanderbilt.edu/available/etd-11212013-144624/ ;


Vanderbilt University

23. Liao, Wenjun. Radiation effects on microelectromechanical systems.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 The effects of ionizing radiation and displacement damage are two significant reliability concerns for transducer applications in radiation environments. Microelectromechanical systems (MEMS) are considered as… (more)

Subjects/Keywords: MEMS; Total-Ionizaton-Dose; Displacement Damage; Piezoelectrc; Electrothermal; 2D Materials; Radiation Effects; Monte Carlo

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APA (6th Edition):

Liao, W. (2018). Radiation effects on microelectromechanical systems. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;

Chicago Manual of Style (16th Edition):

Liao, Wenjun. “Radiation effects on microelectromechanical systems.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;.

MLA Handbook (7th Edition):

Liao, Wenjun. “Radiation effects on microelectromechanical systems.” 2018. Web. 25 Feb 2020.

Vancouver:

Liao W. Radiation effects on microelectromechanical systems. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;.

Council of Science Editors:

Liao W. Radiation effects on microelectromechanical systems. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;


Vanderbilt University

24. Fain, Joshua Stephen. Fabrication, Characterization, and Applications of Porous Silicon Metal-Oxide Nanocomposites.

Degree: PhD, Electrical Engineering, 2019, Vanderbilt University

 Anodically etched porous silicon, which is characterized by aligned cylindrical pores in a silicon matrix, is an attractive material for applications in optics, energy, electronics,… (more)

Subjects/Keywords: porous silicon; nickel oxide; metal oxide; supercapacitor; memristor; nanoparticles

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APA (6th Edition):

Fain, J. S. (2019). Fabrication, Characterization, and Applications of Porous Silicon Metal-Oxide Nanocomposites. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03252019-031819/ ;

Chicago Manual of Style (16th Edition):

Fain, Joshua Stephen. “Fabrication, Characterization, and Applications of Porous Silicon Metal-Oxide Nanocomposites.” 2019. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-03252019-031819/ ;.

MLA Handbook (7th Edition):

Fain, Joshua Stephen. “Fabrication, Characterization, and Applications of Porous Silicon Metal-Oxide Nanocomposites.” 2019. Web. 25 Feb 2020.

Vancouver:

Fain JS. Fabrication, Characterization, and Applications of Porous Silicon Metal-Oxide Nanocomposites. [Internet] [Doctoral dissertation]. Vanderbilt University; 2019. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-03252019-031819/ ;.

Council of Science Editors:

Fain JS. Fabrication, Characterization, and Applications of Porous Silicon Metal-Oxide Nanocomposites. [Doctoral Dissertation]. Vanderbilt University; 2019. Available from: http://etd.library.vanderbilt.edu/available/etd-03252019-031819/ ;


Vanderbilt University

25. Assis, Thiago Rocha de. Soft error aware physical synthesis.

Degree: PhD, Electrical Engineering, 2015, Vanderbilt University

 To allow accurate analysis of Soft Errors by Electronic Design Automation (EDA) tools, analytical models were developed to estimate electrical characteristics of the single event.… (more)

Subjects/Keywords: single event transient; set pulse width; collected charge; radiation effects; electronic design automation; physical synthesis; soft error; reliability

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APA (6th Edition):

Assis, T. R. d. (2015). Soft error aware physical synthesis. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11242015-013303/ ;

Chicago Manual of Style (16th Edition):

Assis, Thiago Rocha de. “Soft error aware physical synthesis.” 2015. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-11242015-013303/ ;.

MLA Handbook (7th Edition):

Assis, Thiago Rocha de. “Soft error aware physical synthesis.” 2015. Web. 25 Feb 2020.

Vancouver:

Assis TRd. Soft error aware physical synthesis. [Internet] [Doctoral dissertation]. Vanderbilt University; 2015. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-11242015-013303/ ;.

Council of Science Editors:

Assis TRd. Soft error aware physical synthesis. [Doctoral Dissertation]. Vanderbilt University; 2015. Available from: http://etd.library.vanderbilt.edu/available/etd-11242015-013303/ ;


Vanderbilt University

26. Arutt, Charles Nathan. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 A T-shaped, asymmetric, piezoresistive, micromachined, resonating cantilever is used to investigate the effects of 10-keV X-rays on resonance frequency and resistivity. Total-ionizing-dose-induced resonance frequency and… (more)

Subjects/Keywords: Semiconductors; Ionizing Radiation; Total Ionizing Dose; X-rays; Silicon; Hydrogen; MEMS; Resonator; Piezoresistivity; Radiation Effects

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APA (6th Edition):

Arutt, C. N. (2018). Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;

Chicago Manual of Style (16th Edition):

Arutt, Charles Nathan. “Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;.

MLA Handbook (7th Edition):

Arutt, Charles Nathan. “Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.” 2018. Web. 25 Feb 2020.

Vancouver:

Arutt CN. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;.

Council of Science Editors:

Arutt CN. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;

27. Liang, Chundong. Response Surface Modeling of the SET Pulse Width Distribution with Operation Parameters and Process Variations.

Degree: MS, Electrical Engineering, 2014, Vanderbilt University

 Soft errors caused by single energetic particles have an important effect on the reliability of space electronic systems. In combinational logic cells, single event transient… (more)

Subjects/Keywords: single event effect; design of experiment; pulse width distribution; statistical modeling

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APA (6th Edition):

Liang, C. (2014). Response Surface Modeling of the SET Pulse Width Distribution with Operation Parameters and Process Variations. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-06262014-152117/ ;

Chicago Manual of Style (16th Edition):

Liang, Chundong. “Response Surface Modeling of the SET Pulse Width Distribution with Operation Parameters and Process Variations.” 2014. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-06262014-152117/ ;.

MLA Handbook (7th Edition):

Liang, Chundong. “Response Surface Modeling of the SET Pulse Width Distribution with Operation Parameters and Process Variations.” 2014. Web. 25 Feb 2020.

Vancouver:

Liang C. Response Surface Modeling of the SET Pulse Width Distribution with Operation Parameters and Process Variations. [Internet] [Masters thesis]. Vanderbilt University; 2014. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-06262014-152117/ ;.

Council of Science Editors:

Liang C. Response Surface Modeling of the SET Pulse Width Distribution with Operation Parameters and Process Variations. [Masters Thesis]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-06262014-152117/ ;

28. McCurdy, Michael William Adelino. 1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors.

Degree: MS, Electrical Engineering, 2017, Vanderbilt University

 Three commercially available GaN-based HEMT RF power devices were irradiated with 1.8 MeV protons in three operational modes. The operational modes were semi-on, fully-on and… (more)

Subjects/Keywords: RF; HEMT; GaN; protons

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APA (6th Edition):

McCurdy, M. W. A. (2017). 1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-09212017-152911/ ;

Chicago Manual of Style (16th Edition):

McCurdy, Michael William Adelino. “1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors.” 2017. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-09212017-152911/ ;.

MLA Handbook (7th Edition):

McCurdy, Michael William Adelino. “1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors.” 2017. Web. 25 Feb 2020.

Vancouver:

McCurdy MWA. 1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors. [Internet] [Masters thesis]. Vanderbilt University; 2017. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-09212017-152911/ ;.

Council of Science Editors:

McCurdy MWA. 1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors. [Masters Thesis]. Vanderbilt University; 2017. Available from: http://etd.library.vanderbilt.edu/available/etd-09212017-152911/ ;

29. Haeffner, Timothy D. Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process.

Degree: MS, Electrical Engineering, 2015, Vanderbilt University

 The impacts of total ionizing dose (TID), temperature and RF bias on the DC and RF performance of a commercial 32 nm RF SOI CMOS… (more)

Subjects/Keywords: RADIO FREQUENCY; TEMPERATURE; SILICON-ON-INSULATOR; CMOS; IRRADIATION

…Institute for Space and Defense Electronics at Vanderbilt University) were used to automate… …employed at The Institute for Space and Defense Electronics at Vanderbilt University). The S… 

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APA (6th Edition):

Haeffner, T. D. (2015). Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03302015-110300/ ;

Chicago Manual of Style (16th Edition):

Haeffner, Timothy D. “Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process.” 2015. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-03302015-110300/ ;.

MLA Handbook (7th Edition):

Haeffner, Timothy D. “Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process.” 2015. Web. 25 Feb 2020.

Vancouver:

Haeffner TD. Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process. [Internet] [Masters thesis]. Vanderbilt University; 2015. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-03302015-110300/ ;.

Council of Science Editors:

Haeffner TD. Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process. [Masters Thesis]. Vanderbilt University; 2015. Available from: http://etd.library.vanderbilt.edu/available/etd-03302015-110300/ ;

30. Duan, Guoxing. Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices.

Degree: MS, Electrical Engineering, 2014, Vanderbilt University

 The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases have been evaluated. Negative bias irradiation leads to the worst-case degradation… (more)

Subjects/Keywords: interface traps; HfO2; SiGe; NBTI; TID; oxide-trap charge

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APA (6th Edition):

Duan, G. (2014). Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03252014-171550/ ;

Chicago Manual of Style (16th Edition):

Duan, Guoxing. “Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices.” 2014. Masters Thesis, Vanderbilt University. Accessed February 25, 2020. http://etd.library.vanderbilt.edu/available/etd-03252014-171550/ ;.

MLA Handbook (7th Edition):

Duan, Guoxing. “Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices.” 2014. Web. 25 Feb 2020.

Vancouver:

Duan G. Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices. [Internet] [Masters thesis]. Vanderbilt University; 2014. [cited 2020 Feb 25]. Available from: http://etd.library.vanderbilt.edu/available/etd-03252014-171550/ ;.

Council of Science Editors:

Duan G. Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices. [Masters Thesis]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-03252014-171550/ ;

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