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You searched for +publisher:"Vanderbilt University" +contributor:("Ronald D. Schrimpf"). Showing records 1 – 30 of 78 total matches.

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Vanderbilt University

1. Liang, Chundong. Response Surface Modeling of the SET Pulse Width Distribution with Operation Parameters and Process Variations.

Degree: MS, Electrical Engineering, 2014, Vanderbilt University

 Soft errors caused by single energetic particles have an important effect on the reliability of space electronic systems. In combinational logic cells, single event transient… (more)

Subjects/Keywords: single event effect; design of experiment; pulse width distribution; statistical modeling

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APA (6th Edition):

Liang, C. (2014). Response Surface Modeling of the SET Pulse Width Distribution with Operation Parameters and Process Variations. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/12700

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liang, Chundong. “Response Surface Modeling of the SET Pulse Width Distribution with Operation Parameters and Process Variations.” 2014. Thesis, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/12700.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liang, Chundong. “Response Surface Modeling of the SET Pulse Width Distribution with Operation Parameters and Process Variations.” 2014. Web. 02 Mar 2021.

Vancouver:

Liang C. Response Surface Modeling of the SET Pulse Width Distribution with Operation Parameters and Process Variations. [Internet] [Thesis]. Vanderbilt University; 2014. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/12700.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liang C. Response Surface Modeling of the SET Pulse Width Distribution with Operation Parameters and Process Variations. [Thesis]. Vanderbilt University; 2014. Available from: http://hdl.handle.net/1803/12700

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

2. Gorchichko, Mariia. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics.

Degree: MS, Electrical Engineering, 2019, Vanderbilt University

 Due to the advances in manufacturing and enhanced gate control of the transistor channel, FinFETs are commonly used in highly-scaled ICs. The geometry of the… (more)

Subjects/Keywords: FinFET; silicon-on-insulator (SOI); total ionizing dose (TID); low-frequency noise; random telegraph noise (RTN)

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APA (6th Edition):

Gorchichko, M. (2019). Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14529

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Gorchichko, Mariia. “Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics.” 2019. Thesis, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/14529.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Gorchichko, Mariia. “Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics.” 2019. Web. 02 Mar 2021.

Vancouver:

Gorchichko M. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics. [Internet] [Thesis]. Vanderbilt University; 2019. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/14529.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Gorchichko M. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics. [Thesis]. Vanderbilt University; 2019. Available from: http://hdl.handle.net/1803/14529

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

3. Duan, Guoxing. Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices.

Degree: MS, Electrical Engineering, 2014, Vanderbilt University

 The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases have been evaluated. Negative bias irradiation leads to the worst-case degradation… (more)

Subjects/Keywords: interface traps; HfO2; SiGe; NBTI; TID; oxide-trap charge

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APA (6th Edition):

Duan, G. (2014). Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/11328

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Duan, Guoxing. “Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices.” 2014. Thesis, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/11328.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Duan, Guoxing. “Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices.” 2014. Web. 02 Mar 2021.

Vancouver:

Duan G. Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices. [Internet] [Thesis]. Vanderbilt University; 2014. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/11328.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Duan G. Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices. [Thesis]. Vanderbilt University; 2014. Available from: http://hdl.handle.net/1803/11328

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

4. Samsel, Isaak Knox. Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors.

Degree: MS, Electrical Engineering, 2014, Vanderbilt University

 Single-event effects (SEEs) in microelectronic devices present a serious reliability concern for space-based applications, where electronic components are exposed to highly energetic ionizing radiation. Single-event… (more)

Subjects/Keywords: HEMTs; single-event effects (SEEs); MOS-HEMTs; Gallium Nitride

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APA (6th Edition):

Samsel, I. K. (2014). Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/13724

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Samsel, Isaak Knox. “Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors.” 2014. Thesis, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/13724.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Samsel, Isaak Knox. “Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors.” 2014. Web. 02 Mar 2021.

Vancouver:

Samsel IK. Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors. [Internet] [Thesis]. Vanderbilt University; 2014. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/13724.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Samsel IK. Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors. [Thesis]. Vanderbilt University; 2014. Available from: http://hdl.handle.net/1803/13724

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

5. Chen, Jin. Radiation response and reliability of AlGaN/GaN HEMTS.

Degree: MS, Electrical Engineering, 2013, Vanderbilt University

 Gallium Nitride (GaN)-based devices are used in space-based high power, high frequency applications due to high breakdown voltage and high carrier mobility and the large… (more)

Subjects/Keywords: reliability; radiation; HEMT; 1/f noise; AlGaN/GaN

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APA (6th Edition):

Chen, J. (2013). Radiation response and reliability of AlGaN/GaN HEMTS. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/12715

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chen, Jin. “Radiation response and reliability of AlGaN/GaN HEMTS.” 2013. Thesis, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/12715.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chen, Jin. “Radiation response and reliability of AlGaN/GaN HEMTS.” 2013. Web. 02 Mar 2021.

Vancouver:

Chen J. Radiation response and reliability of AlGaN/GaN HEMTS. [Internet] [Thesis]. Vanderbilt University; 2013. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/12715.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chen J. Radiation response and reliability of AlGaN/GaN HEMTS. [Thesis]. Vanderbilt University; 2013. Available from: http://hdl.handle.net/1803/12715

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

6. Brewer, Rachel Mae. The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture.

Degree: MS, Electrical Engineering, 2019, Vanderbilt University

 Neuromorphic computing endeavors to imitate the way biological brains process information and problem-solves. Uses for neuromorphic computing span disciplines and include applications in image processing,… (more)

Subjects/Keywords: single event upset; single event effect; radiation effects; neuromorphic computing; image classification; TrueNorth

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APA (6th Edition):

Brewer, R. M. (2019). The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14613

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Brewer, Rachel Mae. “The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture.” 2019. Thesis, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/14613.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Brewer, Rachel Mae. “The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture.” 2019. Web. 02 Mar 2021.

Vancouver:

Brewer RM. The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture. [Internet] [Thesis]. Vanderbilt University; 2019. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/14613.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Brewer RM. The Impact of Proton-Induced Single Events on Image Classification in a Neuromorphic Computing Architecture. [Thesis]. Vanderbilt University; 2019. Available from: http://hdl.handle.net/1803/14613

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

7. Arutt, Charles Nathan. Protons as a Screen for Displacement Damage in Bipolar Junction Transistors.

Degree: MS, Electrical Engineering, 2014, Vanderbilt University

 Protons provide a useful alternative to neutrons for displacement damage testing. However, results can be complicated due to protons causing ionization damage in addition to… (more)

Subjects/Keywords: TID; BJTs; Displacement Damage; Protons; Bipolar Junction Tansistors

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APA (6th Edition):

Arutt, C. N. (2014). Protons as a Screen for Displacement Damage in Bipolar Junction Transistors. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14484

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Arutt, Charles Nathan. “Protons as a Screen for Displacement Damage in Bipolar Junction Transistors.” 2014. Thesis, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/14484.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Arutt, Charles Nathan. “Protons as a Screen for Displacement Damage in Bipolar Junction Transistors.” 2014. Web. 02 Mar 2021.

Vancouver:

Arutt CN. Protons as a Screen for Displacement Damage in Bipolar Junction Transistors. [Internet] [Thesis]. Vanderbilt University; 2014. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/14484.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Arutt CN. Protons as a Screen for Displacement Damage in Bipolar Junction Transistors. [Thesis]. Vanderbilt University; 2014. Available from: http://hdl.handle.net/1803/14484

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

8. McCurdy, Michael William Adelino. 1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors.

Degree: MS, Electrical Engineering, 2017, Vanderbilt University

 Three commercially available GaN-based HEMT RF power devices were irradiated with 1.8 MeV protons in three operational modes. The operational modes were semi-on, fully-on and… (more)

Subjects/Keywords: RF; HEMT; GaN; protons

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APA (6th Edition):

McCurdy, M. W. A. (2017). 1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14197

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

McCurdy, Michael William Adelino. “1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors.” 2017. Thesis, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/14197.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

McCurdy, Michael William Adelino. “1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors.” 2017. Web. 02 Mar 2021.

Vancouver:

McCurdy MWA. 1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors. [Internet] [Thesis]. Vanderbilt University; 2017. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/14197.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

McCurdy MWA. 1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors. [Thesis]. Vanderbilt University; 2017. Available from: http://hdl.handle.net/1803/14197

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

9. Ni, Kai. A fully embedded Silicon On Insulator Total Ionizing Dose monitor.

Degree: MS, Electrical Engineering, 2013, Vanderbilt University

 Total ionizing dose (TID) effect is a kind of radiation effects. It’s related with the charge build up in the insulator caused by the radiation.… (more)

Subjects/Keywords: silicon on insulator; buried oxide; threshold voltage shift; leakage current; current controlled oscillator; total ionizing dose

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APA (6th Edition):

Ni, K. (2013). A fully embedded Silicon On Insulator Total Ionizing Dose monitor. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/13740

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Ni, Kai. “A fully embedded Silicon On Insulator Total Ionizing Dose monitor.” 2013. Thesis, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/13740.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Ni, Kai. “A fully embedded Silicon On Insulator Total Ionizing Dose monitor.” 2013. Web. 02 Mar 2021.

Vancouver:

Ni K. A fully embedded Silicon On Insulator Total Ionizing Dose monitor. [Internet] [Thesis]. Vanderbilt University; 2013. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/13740.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Ni K. A fully embedded Silicon On Insulator Total Ionizing Dose monitor. [Thesis]. Vanderbilt University; 2013. Available from: http://hdl.handle.net/1803/13740

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

10. Chatterjee, Indranil. Single-event charge collection and upset in 65-nm and 40-nm dual- and triple-well bulk CMOS SRAMS.

Degree: MS, Electrical Engineering, 2012, Vanderbilt University

 CMOS technologies can be either dual-well or triple-well. Triple-well technology has several advantages compared to dual-well technology in terms of electrical performance. Differences in the… (more)

Subjects/Keywords: Soft-errors; Single-Event Upset Reversal; Heavy Ion Irradiation; Triple-well; Dual-well; Single-Event Effects

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APA (6th Edition):

Chatterjee, I. (2012). Single-event charge collection and upset in 65-nm and 40-nm dual- and triple-well bulk CMOS SRAMS. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/11296

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Chatterjee, Indranil. “Single-event charge collection and upset in 65-nm and 40-nm dual- and triple-well bulk CMOS SRAMS.” 2012. Thesis, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/11296.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Chatterjee, Indranil. “Single-event charge collection and upset in 65-nm and 40-nm dual- and triple-well bulk CMOS SRAMS.” 2012. Web. 02 Mar 2021.

Vancouver:

Chatterjee I. Single-event charge collection and upset in 65-nm and 40-nm dual- and triple-well bulk CMOS SRAMS. [Internet] [Thesis]. Vanderbilt University; 2012. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/11296.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Chatterjee I. Single-event charge collection and upset in 65-nm and 40-nm dual- and triple-well bulk CMOS SRAMS. [Thesis]. Vanderbilt University; 2012. Available from: http://hdl.handle.net/1803/11296

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

11. Tonigan, Andrew Michael. The theory and application of bipolar transistors as displacement damage sensors.

Degree: MS, Interdisciplinary Materials Science, 2017, Vanderbilt University

 An important aspect of engineering systems for use in extreme environments is understanding the performance of electronic components in radiation environments (e.g., space environments, nuclear… (more)

Subjects/Keywords: radiation effects; displacement damage; bipolar junction transistor

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APA (6th Edition):

Tonigan, A. M. (2017). The theory and application of bipolar transistors as displacement damage sensors. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/11546

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Tonigan, Andrew Michael. “The theory and application of bipolar transistors as displacement damage sensors.” 2017. Thesis, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/11546.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Tonigan, Andrew Michael. “The theory and application of bipolar transistors as displacement damage sensors.” 2017. Web. 02 Mar 2021.

Vancouver:

Tonigan AM. The theory and application of bipolar transistors as displacement damage sensors. [Internet] [Thesis]. Vanderbilt University; 2017. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/11546.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Tonigan AM. The theory and application of bipolar transistors as displacement damage sensors. [Thesis]. Vanderbilt University; 2017. Available from: http://hdl.handle.net/1803/11546

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

12. Keller, Ryan Frederick. Total Ionizing Dose Effects in Silicon Bulk FinFETs at Cryogenic Temperatures.

Degree: MS, Electrical Engineering, 2017, Vanderbilt University

 The icy bodies of the solar system, such as Europa and Titan, are high priority targets for exploratory spacecraft missions by NASA and the world’s… (more)

Subjects/Keywords: low temperature; TID; FinFETs

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APA (6th Edition):

Keller, R. F. (2017). Total Ionizing Dose Effects in Silicon Bulk FinFETs at Cryogenic Temperatures. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14012

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Keller, Ryan Frederick. “Total Ionizing Dose Effects in Silicon Bulk FinFETs at Cryogenic Temperatures.” 2017. Thesis, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/14012.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Keller, Ryan Frederick. “Total Ionizing Dose Effects in Silicon Bulk FinFETs at Cryogenic Temperatures.” 2017. Web. 02 Mar 2021.

Vancouver:

Keller RF. Total Ionizing Dose Effects in Silicon Bulk FinFETs at Cryogenic Temperatures. [Internet] [Thesis]. Vanderbilt University; 2017. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/14012.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Keller RF. Total Ionizing Dose Effects in Silicon Bulk FinFETs at Cryogenic Temperatures. [Thesis]. Vanderbilt University; 2017. Available from: http://hdl.handle.net/1803/14012

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

13. Bennett, William Geoffrey. Efficient characterization of transient pulse shapes from radiation induced upsets.

Degree: MS, Electrical Engineering, 2012, Vanderbilt University

 Single Events Upsets (SEU) have long been a concern of the space and aviation fields. An SEU occurs when the logic state of a data-storage… (more)

Subjects/Keywords: efficient characterization; prompt response; fast transient; drift transport; SEE; single-event effects; charge collection; Monte-Carlo radiation transport code

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APA (6th Edition):

Bennett, W. G. (2012). Efficient characterization of transient pulse shapes from radiation induced upsets. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/12759

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bennett, William Geoffrey. “Efficient characterization of transient pulse shapes from radiation induced upsets.” 2012. Thesis, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/12759.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bennett, William Geoffrey. “Efficient characterization of transient pulse shapes from radiation induced upsets.” 2012. Web. 02 Mar 2021.

Vancouver:

Bennett WG. Efficient characterization of transient pulse shapes from radiation induced upsets. [Internet] [Thesis]. Vanderbilt University; 2012. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/12759.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bennett WG. Efficient characterization of transient pulse shapes from radiation induced upsets. [Thesis]. Vanderbilt University; 2012. Available from: http://hdl.handle.net/1803/12759

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

14. Haeffner, Timothy D. Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process.

Degree: MS, Electrical Engineering, 2015, Vanderbilt University

 The impacts of total ionizing dose (TID), temperature and RF bias on the DC and RF performance of a commercial 32 nm RF SOI CMOS… (more)

Subjects/Keywords: RADIO FREQUENCY; TEMPERATURE; SILICON-ON-INSULATOR; CMOS; IRRADIATION

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APA (6th Edition):

Haeffner, T. D. (2015). Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/11781

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Haeffner, Timothy D. “Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process.” 2015. Thesis, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/11781.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Haeffner, Timothy D. “Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process.” 2015. Web. 02 Mar 2021.

Vancouver:

Haeffner TD. Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process. [Internet] [Thesis]. Vanderbilt University; 2015. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/11781.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Haeffner TD. Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process. [Thesis]. Vanderbilt University; 2015. Available from: http://hdl.handle.net/1803/11781

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

15. Dinkins, Cody Adam. Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology.

Degree: MS, Electrical Engineering, 2011, Vanderbilt University

 Single-event upsets and errors are of growing concern as technology scales toward smaller transistor sizes. While smaller transistors allow for greater on-chip integration, this comes… (more)

Subjects/Keywords: characterization; transient; latchup; single event; 180 nm

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APA (6th Edition):

Dinkins, C. A. (2011). Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/12060

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Dinkins, Cody Adam. “Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology.” 2011. Thesis, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/12060.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Dinkins, Cody Adam. “Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology.” 2011. Web. 02 Mar 2021.

Vancouver:

Dinkins CA. Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology. [Internet] [Thesis]. Vanderbilt University; 2011. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/12060.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Dinkins CA. Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology. [Thesis]. Vanderbilt University; 2011. Available from: http://hdl.handle.net/1803/12060

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

16. Jiang, Rong. Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 During the last three decades, GaN-based HEMTs are increasingly developed for their excellent application for high power, high frequency and radiation-tolerance. The improvements in GaN-based… (more)

Subjects/Keywords: AlGaN/GaN; HEMT; 1/f noise; hot carrier degradation; TID effects; Proton Irradiation

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APA (6th Edition):

Jiang, R. (2018). Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/10409

Chicago Manual of Style (16th Edition):

Jiang, Rong. “Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/10409.

MLA Handbook (7th Edition):

Jiang, Rong. “Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs.” 2018. Web. 02 Mar 2021.

Vancouver:

Jiang R. Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/10409.

Council of Science Editors:

Jiang R. Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://hdl.handle.net/1803/10409


Vanderbilt University

17. Wei, Xing. Porous silicon waveguide biosensors with a grating coupler.

Degree: PhD, Electrical Engineering, 2012, Vanderbilt University

 Sensitive label-free optical biosensors based on grating-coupled porous silicon (PSi) waveguides are demonstrated for biosensing applications. This is the first time that the benefits of… (more)

Subjects/Keywords: gratings; optical biosensor; Porous silicon; waveguide

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APA (6th Edition):

Wei, X. (2012). Porous silicon waveguide biosensors with a grating coupler. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/11427

Chicago Manual of Style (16th Edition):

Wei, Xing. “Porous silicon waveguide biosensors with a grating coupler.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/11427.

MLA Handbook (7th Edition):

Wei, Xing. “Porous silicon waveguide biosensors with a grating coupler.” 2012. Web. 02 Mar 2021.

Vancouver:

Wei X. Porous silicon waveguide biosensors with a grating coupler. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/11427.

Council of Science Editors:

Wei X. Porous silicon waveguide biosensors with a grating coupler. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://hdl.handle.net/1803/11427


Vanderbilt University

18. Wang, Rui. Hybrid Nanostructured Materials for Bioengineering Applications.

Degree: PhD, Physics, 2018, Vanderbilt University

 Nanomaterial research is developed from material science to broad nanotechnology, which leverages advances in material metrology and synthesis in support of microfabrication research. Particularly, carbon… (more)

Subjects/Keywords: bioengineering; sensors; optoelectronics; hybrids; nanomaterial; chemical vapor deposition

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APA (6th Edition):

Wang, R. (2018). Hybrid Nanostructured Materials for Bioengineering Applications. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/12611

Chicago Manual of Style (16th Edition):

Wang, Rui. “Hybrid Nanostructured Materials for Bioengineering Applications.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/12611.

MLA Handbook (7th Edition):

Wang, Rui. “Hybrid Nanostructured Materials for Bioengineering Applications.” 2018. Web. 02 Mar 2021.

Vancouver:

Wang R. Hybrid Nanostructured Materials for Bioengineering Applications. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/12611.

Council of Science Editors:

Wang R. Hybrid Nanostructured Materials for Bioengineering Applications. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://hdl.handle.net/1803/12611


Vanderbilt University

19. Hong, Tu. Low-dimensional materials for optoelectronic and bioelectronic applications.

Degree: PhD, Electrical Engineering, 2017, Vanderbilt University

 The field of nanotechnology has witnessed amazing development in the past decade. In particular, studies of low-dimensional materials, including carbon nanotubes (CNTs), graphene, and other… (more)

Subjects/Keywords: photodetector; bioelectronic; optoelectronic; carbon nanotube; graphene; 2D material; biosensor

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APA (6th Edition):

Hong, T. (2017). Low-dimensional materials for optoelectronic and bioelectronic applications. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/13783

Chicago Manual of Style (16th Edition):

Hong, Tu. “Low-dimensional materials for optoelectronic and bioelectronic applications.” 2017. Doctoral Dissertation, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/13783.

MLA Handbook (7th Edition):

Hong, Tu. “Low-dimensional materials for optoelectronic and bioelectronic applications.” 2017. Web. 02 Mar 2021.

Vancouver:

Hong T. Low-dimensional materials for optoelectronic and bioelectronic applications. [Internet] [Doctoral dissertation]. Vanderbilt University; 2017. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/13783.

Council of Science Editors:

Hong T. Low-dimensional materials for optoelectronic and bioelectronic applications. [Doctoral Dissertation]. Vanderbilt University; 2017. Available from: http://hdl.handle.net/1803/13783


Vanderbilt University

20. Niezgoda, Jeffrey Scotten. The Implementation of Quantum Dots in Photovoltaics: From Semiconductor-Plasmon Interactions to Current Visualization.

Degree: PhD, Chemistry, 2015, Vanderbilt University

 This thesis presents two avenues through which solution processable and electronically tunable QDs are investigated as active absorbers in photovoltaic applications. First, the synthesis and… (more)

Subjects/Keywords: quantum dots; plasmons; photovoltaics; EBIC; CuInS2

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APA (6th Edition):

Niezgoda, J. S. (2015). The Implementation of Quantum Dots in Photovoltaics: From Semiconductor-Plasmon Interactions to Current Visualization. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/10899

Chicago Manual of Style (16th Edition):

Niezgoda, Jeffrey Scotten. “The Implementation of Quantum Dots in Photovoltaics: From Semiconductor-Plasmon Interactions to Current Visualization.” 2015. Doctoral Dissertation, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/10899.

MLA Handbook (7th Edition):

Niezgoda, Jeffrey Scotten. “The Implementation of Quantum Dots in Photovoltaics: From Semiconductor-Plasmon Interactions to Current Visualization.” 2015. Web. 02 Mar 2021.

Vancouver:

Niezgoda JS. The Implementation of Quantum Dots in Photovoltaics: From Semiconductor-Plasmon Interactions to Current Visualization. [Internet] [Doctoral dissertation]. Vanderbilt University; 2015. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/10899.

Council of Science Editors:

Niezgoda JS. The Implementation of Quantum Dots in Photovoltaics: From Semiconductor-Plasmon Interactions to Current Visualization. [Doctoral Dissertation]. Vanderbilt University; 2015. Available from: http://hdl.handle.net/1803/10899


Vanderbilt University

21. Ling, You. Uncertainty quantification in time-dependent reliability analysis.

Degree: PhD, Civil Engineering, 2013, Vanderbilt University

 The prediction of failure probability for engineering components/devices under service conditions often involves the use of predictive models and measurement data. The fact that no… (more)

Subjects/Keywords: Bayesian network; calibration; validation; model uncertainty; reliability

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APA (6th Edition):

Ling, Y. (2013). Uncertainty quantification in time-dependent reliability analysis. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14008

Chicago Manual of Style (16th Edition):

Ling, You. “Uncertainty quantification in time-dependent reliability analysis.” 2013. Doctoral Dissertation, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/14008.

MLA Handbook (7th Edition):

Ling, You. “Uncertainty quantification in time-dependent reliability analysis.” 2013. Web. 02 Mar 2021.

Vancouver:

Ling Y. Uncertainty quantification in time-dependent reliability analysis. [Internet] [Doctoral dissertation]. Vanderbilt University; 2013. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/14008.

Council of Science Editors:

Ling Y. Uncertainty quantification in time-dependent reliability analysis. [Doctoral Dissertation]. Vanderbilt University; 2013. Available from: http://hdl.handle.net/1803/14008


Vanderbilt University

22. Austin, Rebekah Ann. Modeling Radiation Risk Assessment and Mitigation for Spacecraft Electronics.

Degree: PhD, Electrical Engineering, 2019, Vanderbilt University

 Space-based missions are increasingly having to design and test systems with shorter development times and small budgets and teams. These missions additionally have a higher… (more)

Subjects/Keywords: Risk Assessment; single-event burnout; Model-Based Mission Assurance; silicon carbide; Radiation Hardness Assurance; fault propagation models

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APA (6th Edition):

Austin, R. A. (2019). Modeling Radiation Risk Assessment and Mitigation for Spacecraft Electronics. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14614

Chicago Manual of Style (16th Edition):

Austin, Rebekah Ann. “Modeling Radiation Risk Assessment and Mitigation for Spacecraft Electronics.” 2019. Doctoral Dissertation, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/14614.

MLA Handbook (7th Edition):

Austin, Rebekah Ann. “Modeling Radiation Risk Assessment and Mitigation for Spacecraft Electronics.” 2019. Web. 02 Mar 2021.

Vancouver:

Austin RA. Modeling Radiation Risk Assessment and Mitigation for Spacecraft Electronics. [Internet] [Doctoral dissertation]. Vanderbilt University; 2019. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/14614.

Council of Science Editors:

Austin RA. Modeling Radiation Risk Assessment and Mitigation for Spacecraft Electronics. [Doctoral Dissertation]. Vanderbilt University; 2019. Available from: http://hdl.handle.net/1803/14614


Vanderbilt University

23. Jiang, Hui. Design of soft-error-aware sequential circuits with power and speed optimization.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 A single-event effect (SEE) of circuits is strongly dependent on the supply voltage and the physical capacitance. Reduction in supply voltage as well as technology… (more)

Subjects/Keywords: power optimization; sequential circuit; soft error rate; Single event effects; empirical model

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APA (6th Edition):

Jiang, H. (2018). Design of soft-error-aware sequential circuits with power and speed optimization. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/10911

Chicago Manual of Style (16th Edition):

Jiang, Hui. “Design of soft-error-aware sequential circuits with power and speed optimization.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/10911.

MLA Handbook (7th Edition):

Jiang, Hui. “Design of soft-error-aware sequential circuits with power and speed optimization.” 2018. Web. 02 Mar 2021.

Vancouver:

Jiang H. Design of soft-error-aware sequential circuits with power and speed optimization. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/10911.

Council of Science Editors:

Jiang H. Design of soft-error-aware sequential circuits with power and speed optimization. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://hdl.handle.net/1803/10911


Vanderbilt University

24. Liao, Wenjun. Radiation effects on microelectromechanical systems.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 The effects of ionizing radiation and displacement damage are two significant reliability concerns for transducer applications in radiation environments. Microelectromechanical systems (MEMS) are considered as… (more)

Subjects/Keywords: MEMS; Total-Ionizaton-Dose; Displacement Damage; Piezoelectrc; Electrothermal; 2D Materials; Radiation Effects; Monte Carlo

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APA (6th Edition):

Liao, W. (2018). Radiation effects on microelectromechanical systems. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/13980

Chicago Manual of Style (16th Edition):

Liao, Wenjun. “Radiation effects on microelectromechanical systems.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/13980.

MLA Handbook (7th Edition):

Liao, Wenjun. “Radiation effects on microelectromechanical systems.” 2018. Web. 02 Mar 2021.

Vancouver:

Liao W. Radiation effects on microelectromechanical systems. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/13980.

Council of Science Editors:

Liao W. Radiation effects on microelectromechanical systems. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://hdl.handle.net/1803/13980


Vanderbilt University

25. Duan, Guoxing. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.

Degree: PhD, Electrical Engineering, 2016, Vanderbilt University

 The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases has been evaluated. Negative bias irradiation leads to the worst-case degradation.… (more)

Subjects/Keywords: HfO2; SiGe; low frequency noise; NBTI; TID

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APA (6th Edition):

Duan, G. (2016). Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/13406

Chicago Manual of Style (16th Edition):

Duan, Guoxing. “Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.” 2016. Doctoral Dissertation, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/13406.

MLA Handbook (7th Edition):

Duan, Guoxing. “Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.” 2016. Web. 02 Mar 2021.

Vancouver:

Duan G. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. [Internet] [Doctoral dissertation]. Vanderbilt University; 2016. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/13406.

Council of Science Editors:

Duan G. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. [Doctoral Dissertation]. Vanderbilt University; 2016. Available from: http://hdl.handle.net/1803/13406


Vanderbilt University

26. El Mamouni, Farah. Single-event-transient effects in sub-70 nm bulk and SOI FinFETs.

Degree: PhD, Electrical Engineering, 2012, Vanderbilt University

 In this thesis, single event transient (SET) effects in sub-70 nm bulk and SOI FinFETs are investigated through topside and backside laser and heavy ion… (more)

Subjects/Keywords: single event effects.; electronic devices; Radiation effects

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APA (6th Edition):

El Mamouni, F. (2012). Single-event-transient effects in sub-70 nm bulk and SOI FinFETs. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/12873

Chicago Manual of Style (16th Edition):

El Mamouni, Farah. “Single-event-transient effects in sub-70 nm bulk and SOI FinFETs.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/12873.

MLA Handbook (7th Edition):

El Mamouni, Farah. “Single-event-transient effects in sub-70 nm bulk and SOI FinFETs.” 2012. Web. 02 Mar 2021.

Vancouver:

El Mamouni F. Single-event-transient effects in sub-70 nm bulk and SOI FinFETs. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/12873.

Council of Science Editors:

El Mamouni F. Single-event-transient effects in sub-70 nm bulk and SOI FinFETs. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://hdl.handle.net/1803/12873


Vanderbilt University

27. Chatterjee, Indranil. Geometric Dependence of the Total Ionizing Dose Response of FinFETs.

Degree: PhD, Electrical Engineering, 2014, Vanderbilt University

 The total ionizing dose induced degradation in advanced deep-submicron CMOS technologies has been significantly reduced by scaling. Damage to isolating field oxides remains a significant… (more)

Subjects/Keywords: Total dose effects; Isolation oxides; Bulk FinFET; SOI FinFET; Parasitic transistor; Oxide traps; Charge trapping

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APA (6th Edition):

Chatterjee, I. (2014). Geometric Dependence of the Total Ionizing Dose Response of FinFETs. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/13758

Chicago Manual of Style (16th Edition):

Chatterjee, Indranil. “Geometric Dependence of the Total Ionizing Dose Response of FinFETs.” 2014. Doctoral Dissertation, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/13758.

MLA Handbook (7th Edition):

Chatterjee, Indranil. “Geometric Dependence of the Total Ionizing Dose Response of FinFETs.” 2014. Web. 02 Mar 2021.

Vancouver:

Chatterjee I. Geometric Dependence of the Total Ionizing Dose Response of FinFETs. [Internet] [Doctoral dissertation]. Vanderbilt University; 2014. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/13758.

Council of Science Editors:

Chatterjee I. Geometric Dependence of the Total Ionizing Dose Response of FinFETs. [Doctoral Dissertation]. Vanderbilt University; 2014. Available from: http://hdl.handle.net/1803/13758


Vanderbilt University

28. Sierawski, Brian David. The Role of Singly-Charged Particles in Microelectronics Reliability.

Degree: PhD, Electrical Engineering, 2011, Vanderbilt University

 Lightly ionizing particles in any radiation environment have the potential to induce single event upsets in scaled CMOS technologies. As microelectronic devices become smaller and… (more)

Subjects/Keywords: proton; muon; direct ionization; single event upset; soft error; memory

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APA (6th Edition):

Sierawski, B. D. (2011). The Role of Singly-Charged Particles in Microelectronics Reliability. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14976

Chicago Manual of Style (16th Edition):

Sierawski, Brian David. “The Role of Singly-Charged Particles in Microelectronics Reliability.” 2011. Doctoral Dissertation, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/14976.

MLA Handbook (7th Edition):

Sierawski, Brian David. “The Role of Singly-Charged Particles in Microelectronics Reliability.” 2011. Web. 02 Mar 2021.

Vancouver:

Sierawski BD. The Role of Singly-Charged Particles in Microelectronics Reliability. [Internet] [Doctoral dissertation]. Vanderbilt University; 2011. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/14976.

Council of Science Editors:

Sierawski BD. The Role of Singly-Charged Particles in Microelectronics Reliability. [Doctoral Dissertation]. Vanderbilt University; 2011. Available from: http://hdl.handle.net/1803/14976


Vanderbilt University

29. Jagannathan, Srikanth. TID characterization of high frequency RF circuits in NANO-CMOS technologies.

Degree: PhD, Electrical Engineering, 2013, Vanderbilt University

 Rapid downscaling of CMOS technology has resulted in significant improvement in the RF performance of Silicon MOSFETs. As a result, standard CMOS technology has become… (more)

Subjects/Keywords: RF; TID

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APA (6th Edition):

Jagannathan, S. (2013). TID characterization of high frequency RF circuits in NANO-CMOS technologies. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14535

Chicago Manual of Style (16th Edition):

Jagannathan, Srikanth. “TID characterization of high frequency RF circuits in NANO-CMOS technologies.” 2013. Doctoral Dissertation, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/14535.

MLA Handbook (7th Edition):

Jagannathan, Srikanth. “TID characterization of high frequency RF circuits in NANO-CMOS technologies.” 2013. Web. 02 Mar 2021.

Vancouver:

Jagannathan S. TID characterization of high frequency RF circuits in NANO-CMOS technologies. [Internet] [Doctoral dissertation]. Vanderbilt University; 2013. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/14535.

Council of Science Editors:

Jagannathan S. TID characterization of high frequency RF circuits in NANO-CMOS technologies. [Doctoral Dissertation]. Vanderbilt University; 2013. Available from: http://hdl.handle.net/1803/14535


Vanderbilt University

30. Auden, Elizabeth Catherine. Heavy Ion-Induced Single Particle Displacement Damage in Silicon.

Degree: PhD, Electrical Engineering, 2013, Vanderbilt University

 Displacement damage from individual heavy ions results in discrete, measurable electrical degradation in 252Cf-irradiated silicon diodes. This work presents measurements of discrete increases in diode… (more)

Subjects/Keywords: single event effects; single event displacement damage; Shockley-Read-Hall generation; radiation effects; JFET diodes; leakage current; ions; generation region; fission fragments; femtoampere current measurements; electric field enhancement; displacement damage; diodes; depletion region; defects; defect density; current steps; current pulses; californium; single particle displacement damage

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APA (6th Edition):

Auden, E. C. (2013). Heavy Ion-Induced Single Particle Displacement Damage in Silicon. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14685

Chicago Manual of Style (16th Edition):

Auden, Elizabeth Catherine. “Heavy Ion-Induced Single Particle Displacement Damage in Silicon.” 2013. Doctoral Dissertation, Vanderbilt University. Accessed March 02, 2021. http://hdl.handle.net/1803/14685.

MLA Handbook (7th Edition):

Auden, Elizabeth Catherine. “Heavy Ion-Induced Single Particle Displacement Damage in Silicon.” 2013. Web. 02 Mar 2021.

Vancouver:

Auden EC. Heavy Ion-Induced Single Particle Displacement Damage in Silicon. [Internet] [Doctoral dissertation]. Vanderbilt University; 2013. [cited 2021 Mar 02]. Available from: http://hdl.handle.net/1803/14685.

Council of Science Editors:

Auden EC. Heavy Ion-Induced Single Particle Displacement Damage in Silicon. [Doctoral Dissertation]. Vanderbilt University; 2013. Available from: http://hdl.handle.net/1803/14685

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