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You searched for +publisher:"Vanderbilt University" +contributor:("Robert A. Reed"). Showing records 1 – 30 of 43 total matches.

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Vanderbilt University

1. Voytek, Patrick Clay. Gamma total ionizing dose impact on the control performance of integrated point-of-load converters.

Degree: MS, Electrical Engineering, 2014, Vanderbilt University

 The growing demand for commercial off the shelf (COTS) electronic components in radiation environments has driven the need for researching the total ionizing dose (TID)… (more)

Subjects/Keywords: integrated converter; POL converter; buck converter; DC/DC converter; loop gain; TID; switching converter

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APA (6th Edition):

Voytek, P. C. (2014). Gamma total ionizing dose impact on the control performance of integrated point-of-load converters. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07302014-151719/ ;

Chicago Manual of Style (16th Edition):

Voytek, Patrick Clay. “Gamma total ionizing dose impact on the control performance of integrated point-of-load converters.” 2014. Masters Thesis, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-07302014-151719/ ;.

MLA Handbook (7th Edition):

Voytek, Patrick Clay. “Gamma total ionizing dose impact on the control performance of integrated point-of-load converters.” 2014. Web. 29 Mar 2020.

Vancouver:

Voytek PC. Gamma total ionizing dose impact on the control performance of integrated point-of-load converters. [Internet] [Masters thesis]. Vanderbilt University; 2014. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-07302014-151719/ ;.

Council of Science Editors:

Voytek PC. Gamma total ionizing dose impact on the control performance of integrated point-of-load converters. [Masters Thesis]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-07302014-151719/ ;


Vanderbilt University

2. Francis, Sarah Ashley. Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices.

Degree: PhD, Electrical Engineering, 2011, Vanderbilt University

 Defects that lie at or near the semiconductor-oxide interface of MOS transistors were characterized using 1/f noise and charge pumping measurements. The frequency, gate-voltage, and… (more)

Subjects/Keywords: charge pumping; radiation effects; 1/f noise

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APA (6th Edition):

Francis, S. A. (2011). Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11102011-122043/ ;

Chicago Manual of Style (16th Edition):

Francis, Sarah Ashley. “Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices.” 2011. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-11102011-122043/ ;.

MLA Handbook (7th Edition):

Francis, Sarah Ashley. “Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices.” 2011. Web. 29 Mar 2020.

Vancouver:

Francis SA. Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices. [Internet] [Doctoral dissertation]. Vanderbilt University; 2011. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-11102011-122043/ ;.

Council of Science Editors:

Francis SA. Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices. [Doctoral Dissertation]. Vanderbilt University; 2011. Available from: http://etd.library.vanderbilt.edu/available/etd-11102011-122043/ ;


Vanderbilt University

3. Gadlage, Matthew John. Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies.

Degree: PhD, Electrical Engineering, 2010, Vanderbilt University

 Single-event transients (SETs) are a significant reliability issue for space-based electronic systems. A single-event transient is a radiation-induced glitch in an electronic circuit caused by… (more)

Subjects/Keywords: radiation effects; space environment; soft errors; heavy ions; single event effects; single event transients; silicon-on-insulator; temperature

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APA (6th Edition):

Gadlage, M. J. (2010). Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03262010-102121/ ;

Chicago Manual of Style (16th Edition):

Gadlage, Matthew John. “Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies.” 2010. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-03262010-102121/ ;.

MLA Handbook (7th Edition):

Gadlage, Matthew John. “Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies.” 2010. Web. 29 Mar 2020.

Vancouver:

Gadlage MJ. Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies. [Internet] [Doctoral dissertation]. Vanderbilt University; 2010. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-03262010-102121/ ;.

Council of Science Editors:

Gadlage MJ. Impact of Temperature on Single-Event Transients in Deep Submicrometer Bulk and Silicon-On-Insulator Digital CMOS Technologies. [Doctoral Dissertation]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-03262010-102121/ ;


Vanderbilt University

4. Roy, Tania. Reliability-limiting defects in GaN/AlGaN high electron mobility transistors.

Degree: PhD, Electrical Engineering, 2011, Vanderbilt University

 The reliability of GaN/AlGaN HEMTs, fabricated using MOCVD, and MBE under Ga-rich, N-rich and ammonia-rich conditions, is studied using high field stress experiments and low… (more)

Subjects/Keywords: RF stress; Ga-N divacancy; oxygen DX center; N antisite; Ga vacancy; HEMT; GaN; DC stress; 1/f noise

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APA (6th Edition):

Roy, T. (2011). Reliability-limiting defects in GaN/AlGaN high electron mobility transistors. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-10122011-111627/ ;

Chicago Manual of Style (16th Edition):

Roy, Tania. “Reliability-limiting defects in GaN/AlGaN high electron mobility transistors.” 2011. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-10122011-111627/ ;.

MLA Handbook (7th Edition):

Roy, Tania. “Reliability-limiting defects in GaN/AlGaN high electron mobility transistors.” 2011. Web. 29 Mar 2020.

Vancouver:

Roy T. Reliability-limiting defects in GaN/AlGaN high electron mobility transistors. [Internet] [Doctoral dissertation]. Vanderbilt University; 2011. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-10122011-111627/ ;.

Council of Science Editors:

Roy T. Reliability-limiting defects in GaN/AlGaN high electron mobility transistors. [Doctoral Dissertation]. Vanderbilt University; 2011. Available from: http://etd.library.vanderbilt.edu/available/etd-10122011-111627/ ;


Vanderbilt University

5. Hooten, Nicholas C. Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events.

Degree: PhD, Electrical Engineering, 2014, Vanderbilt University

 When ionizing radiation interacts with a semiconductor device, the resulting generation and collection of excess charge carriers can result in a brief transient current at… (more)

Subjects/Keywords: SEE; single-event effects; radiation effects in microelectronics; Two-photon absorption laser testing for SEE; SEE laser testing; device-level current transients

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APA (6th Edition):

Hooten, N. C. (2014). Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03312014-121311/ ;

Chicago Manual of Style (16th Edition):

Hooten, Nicholas C. “Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events.” 2014. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-03312014-121311/ ;.

MLA Handbook (7th Edition):

Hooten, Nicholas C. “Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events.” 2014. Web. 29 Mar 2020.

Vancouver:

Hooten NC. Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events. [Internet] [Doctoral dissertation]. Vanderbilt University; 2014. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-03312014-121311/ ;.

Council of Science Editors:

Hooten NC. Charge Collection Mechanisms in Silicon Devices During High-Level Carrier Generation Events. [Doctoral Dissertation]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-03312014-121311/ ;


Vanderbilt University

6. King, Michael Patrick. Energetic electron-induced single event upsets in static random access memory.

Degree: PhD, Electrical Engineering, 2014, Vanderbilt University

  Energy deposition in ionizing radiation events can cause errors in static random access memories (SRAMs). The resulting errors can negatively impact nominal systems operation.… (more)

Subjects/Keywords: electron-induced SEU; energetic electron; static random access memory; single-event upset; error rate predictions

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APA (6th Edition):

King, M. P. (2014). Energetic electron-induced single event upsets in static random access memory. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03242014-131749/ ;

Chicago Manual of Style (16th Edition):

King, Michael Patrick. “Energetic electron-induced single event upsets in static random access memory.” 2014. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-03242014-131749/ ;.

MLA Handbook (7th Edition):

King, Michael Patrick. “Energetic electron-induced single event upsets in static random access memory.” 2014. Web. 29 Mar 2020.

Vancouver:

King MP. Energetic electron-induced single event upsets in static random access memory. [Internet] [Doctoral dissertation]. Vanderbilt University; 2014. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-03242014-131749/ ;.

Council of Science Editors:

King MP. Energetic electron-induced single event upsets in static random access memory. [Doctoral Dissertation]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-03242014-131749/ ;


Vanderbilt University

7. Mukherjee, Shubhajit. Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs.

Degree: PhD, Interdisciplinary Materials Science, 2015, Vanderbilt University

 Gallium Nitride or GaN-based high electron mobility transistors (HEMTs) is currently the most promising device technology in several key military and civilian applications due to… (more)

Subjects/Keywords: hot electron; dehydrogenation; semi-ON; defects; GaN HEMT; degradation; EMC; DFT; k.p

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APA (6th Edition):

Mukherjee, S. (2015). Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11052015-010923/ ;

Chicago Manual of Style (16th Edition):

Mukherjee, Shubhajit. “Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs.” 2015. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-11052015-010923/ ;.

MLA Handbook (7th Edition):

Mukherjee, Shubhajit. “Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs.” 2015. Web. 29 Mar 2020.

Vancouver:

Mukherjee S. Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs. [Internet] [Doctoral dissertation]. Vanderbilt University; 2015. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-11052015-010923/ ;.

Council of Science Editors:

Mukherjee S. Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs. [Doctoral Dissertation]. Vanderbilt University; 2015. Available from: http://etd.library.vanderbilt.edu/available/etd-11052015-010923/ ;


Vanderbilt University

8. Trippe, James Michael. Monte Carlo methods for predicting SRAM vulnerability to muon and electron induced single event upsets.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 Stopping muons and electrons have been shown in previous work to be capable of inducing single event upsets (SEUs) in modern SRAM technologies. In order… (more)

Subjects/Keywords: Monte Carlo; Single Event Upset; Ion Beam; SRAM

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APA (6th Edition):

Trippe, J. M. (2018). Monte Carlo methods for predicting SRAM vulnerability to muon and electron induced single event upsets. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-04122018-185733/ ;

Chicago Manual of Style (16th Edition):

Trippe, James Michael. “Monte Carlo methods for predicting SRAM vulnerability to muon and electron induced single event upsets.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-04122018-185733/ ;.

MLA Handbook (7th Edition):

Trippe, James Michael. “Monte Carlo methods for predicting SRAM vulnerability to muon and electron induced single event upsets.” 2018. Web. 29 Mar 2020.

Vancouver:

Trippe JM. Monte Carlo methods for predicting SRAM vulnerability to muon and electron induced single event upsets. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-04122018-185733/ ;.

Council of Science Editors:

Trippe JM. Monte Carlo methods for predicting SRAM vulnerability to muon and electron induced single event upsets. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-04122018-185733/ ;


Vanderbilt University

9. Duan, Guoxing. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.

Degree: PhD, Electrical Engineering, 2016, Vanderbilt University

 The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases has been evaluated. Negative bias irradiation leads to the worst-case degradation.… (more)

Subjects/Keywords: HfO2; SiGe; low frequency noise; NBTI; TID

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APA (6th Edition):

Duan, G. (2016). Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;

Chicago Manual of Style (16th Edition):

Duan, Guoxing. “Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.” 2016. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;.

MLA Handbook (7th Edition):

Duan, Guoxing. “Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.” 2016. Web. 29 Mar 2020.

Vancouver:

Duan G. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. [Internet] [Doctoral dissertation]. Vanderbilt University; 2016. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;.

Council of Science Editors:

Duan G. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. [Doctoral Dissertation]. Vanderbilt University; 2016. Available from: http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;


Vanderbilt University

10. Mayo, Daniel Craig. Zinc Oxide Nanowire Gamma-Ray Detector with High Spatiotemporal Resolution.

Degree: PhD, Interdisciplinary Materials Science, 2017, Vanderbilt University

 This research is focused on developing a new type of gamma-ray scintillator and is motivated by the need for more accurate positron emission tomography (PET)… (more)

Subjects/Keywords: nanowire; zinc oxide; zno; scintillator; radiation detector

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APA (6th Edition):

Mayo, D. C. (2017). Zinc Oxide Nanowire Gamma-Ray Detector with High Spatiotemporal Resolution. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03292017-001124/ ;

Chicago Manual of Style (16th Edition):

Mayo, Daniel Craig. “Zinc Oxide Nanowire Gamma-Ray Detector with High Spatiotemporal Resolution.” 2017. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-03292017-001124/ ;.

MLA Handbook (7th Edition):

Mayo, Daniel Craig. “Zinc Oxide Nanowire Gamma-Ray Detector with High Spatiotemporal Resolution.” 2017. Web. 29 Mar 2020.

Vancouver:

Mayo DC. Zinc Oxide Nanowire Gamma-Ray Detector with High Spatiotemporal Resolution. [Internet] [Doctoral dissertation]. Vanderbilt University; 2017. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-03292017-001124/ ;.

Council of Science Editors:

Mayo DC. Zinc Oxide Nanowire Gamma-Ray Detector with High Spatiotemporal Resolution. [Doctoral Dissertation]. Vanderbilt University; 2017. Available from: http://etd.library.vanderbilt.edu/available/etd-03292017-001124/ ;


Vanderbilt University

11. Wang, Pan. RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS.

Degree: PhD, Electrical Engineering, 2019, Vanderbilt University

 Metal oxide semiconductor field effect transistors (MOSFETs) are the building blocks of modern integrated circuits. The semiconductor industry needs to continue scaling the dimensions of… (more)

Subjects/Keywords: Defects; Low frequency noise; Radiation Effects; Microelectronic devices; Two dimensional materials

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APA (6th Edition):

Wang, P. (2019). RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07192019-104923/ ;

Chicago Manual of Style (16th Edition):

Wang, Pan. “RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS.” 2019. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-07192019-104923/ ;.

MLA Handbook (7th Edition):

Wang, Pan. “RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS.” 2019. Web. 29 Mar 2020.

Vancouver:

Wang P. RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS. [Internet] [Doctoral dissertation]. Vanderbilt University; 2019. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-07192019-104923/ ;.

Council of Science Editors:

Wang P. RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS. [Doctoral Dissertation]. Vanderbilt University; 2019. Available from: http://etd.library.vanderbilt.edu/available/etd-07192019-104923/ ;


Vanderbilt University

12. Auden, Elizabeth Catherine. Heavy Ion-Induced Single Particle Displacement Damage in Silicon.

Degree: PhD, Electrical Engineering, 2013, Vanderbilt University

 Displacement damage from individual heavy ions results in discrete, measurable electrical degradation in 252Cf-irradiated silicon diodes. This work presents measurements of discrete increases in diode… (more)

Subjects/Keywords: single event effects; single event displacement damage; Shockley-Read-Hall generation; radiation effects; JFET diodes; leakage current; ions; generation region; fission fragments; femtoampere current measurements; electric field enhancement; displacement damage; diodes; depletion region; defects; defect density; current steps; current pulses; californium; single particle displacement damage

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APA (6th Edition):

Auden, E. C. (2013). Heavy Ion-Induced Single Particle Displacement Damage in Silicon. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11212013-144624/ ;

Chicago Manual of Style (16th Edition):

Auden, Elizabeth Catherine. “Heavy Ion-Induced Single Particle Displacement Damage in Silicon.” 2013. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-11212013-144624/ ;.

MLA Handbook (7th Edition):

Auden, Elizabeth Catherine. “Heavy Ion-Induced Single Particle Displacement Damage in Silicon.” 2013. Web. 29 Mar 2020.

Vancouver:

Auden EC. Heavy Ion-Induced Single Particle Displacement Damage in Silicon. [Internet] [Doctoral dissertation]. Vanderbilt University; 2013. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-11212013-144624/ ;.

Council of Science Editors:

Auden EC. Heavy Ion-Induced Single Particle Displacement Damage in Silicon. [Doctoral Dissertation]. Vanderbilt University; 2013. Available from: http://etd.library.vanderbilt.edu/available/etd-11212013-144624/ ;


Vanderbilt University

13. Liao, Wenjun. Radiation effects on microelectromechanical systems.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 The effects of ionizing radiation and displacement damage are two significant reliability concerns for transducer applications in radiation environments. Microelectromechanical systems (MEMS) are considered as… (more)

Subjects/Keywords: MEMS; Total-Ionizaton-Dose; Displacement Damage; Piezoelectrc; Electrothermal; 2D Materials; Radiation Effects; Monte Carlo

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APA (6th Edition):

Liao, W. (2018). Radiation effects on microelectromechanical systems. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;

Chicago Manual of Style (16th Edition):

Liao, Wenjun. “Radiation effects on microelectromechanical systems.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;.

MLA Handbook (7th Edition):

Liao, Wenjun. “Radiation effects on microelectromechanical systems.” 2018. Web. 29 Mar 2020.

Vancouver:

Liao W. Radiation effects on microelectromechanical systems. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;.

Council of Science Editors:

Liao W. Radiation effects on microelectromechanical systems. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;


Vanderbilt University

14. Fain, Joshua Stephen. Fabrication, Characterization, and Applications of Porous Silicon Metal-Oxide Nanocomposites.

Degree: PhD, Electrical Engineering, 2019, Vanderbilt University

 Anodically etched porous silicon, which is characterized by aligned cylindrical pores in a silicon matrix, is an attractive material for applications in optics, energy, electronics,… (more)

Subjects/Keywords: porous silicon; nickel oxide; metal oxide; supercapacitor; memristor; nanoparticles

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APA (6th Edition):

Fain, J. S. (2019). Fabrication, Characterization, and Applications of Porous Silicon Metal-Oxide Nanocomposites. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03252019-031819/ ;

Chicago Manual of Style (16th Edition):

Fain, Joshua Stephen. “Fabrication, Characterization, and Applications of Porous Silicon Metal-Oxide Nanocomposites.” 2019. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-03252019-031819/ ;.

MLA Handbook (7th Edition):

Fain, Joshua Stephen. “Fabrication, Characterization, and Applications of Porous Silicon Metal-Oxide Nanocomposites.” 2019. Web. 29 Mar 2020.

Vancouver:

Fain JS. Fabrication, Characterization, and Applications of Porous Silicon Metal-Oxide Nanocomposites. [Internet] [Doctoral dissertation]. Vanderbilt University; 2019. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-03252019-031819/ ;.

Council of Science Editors:

Fain JS. Fabrication, Characterization, and Applications of Porous Silicon Metal-Oxide Nanocomposites. [Doctoral Dissertation]. Vanderbilt University; 2019. Available from: http://etd.library.vanderbilt.edu/available/etd-03252019-031819/ ;


Vanderbilt University

15. Arutt, Charles Nathan. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 A T-shaped, asymmetric, piezoresistive, micromachined, resonating cantilever is used to investigate the effects of 10-keV X-rays on resonance frequency and resistivity. Total-ionizing-dose-induced resonance frequency and… (more)

Subjects/Keywords: Semiconductors; Ionizing Radiation; Total Ionizing Dose; X-rays; Silicon; Hydrogen; MEMS; Resonator; Piezoresistivity; Radiation Effects

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APA (6th Edition):

Arutt, C. N. (2018). Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;

Chicago Manual of Style (16th Edition):

Arutt, Charles Nathan. “Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;.

MLA Handbook (7th Edition):

Arutt, Charles Nathan. “Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.” 2018. Web. 29 Mar 2020.

Vancouver:

Arutt CN. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;.

Council of Science Editors:

Arutt CN. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;

16. Deka, Suruj Sambhav. Memristance Phenomenon in TiO2-Porous Silicon Nanocomposites.

Degree: MS, Electrical Engineering, 2015, Vanderbilt University

 As feature sizes for semiconductor devices approach atomic dimensions, memory architectures such as DRAM and flash, encounter performance limitations due to increased effects from leakage… (more)

Subjects/Keywords: high power applications; macroscale; titanium dioxide; memristors; state retention; hysteresis; oxygen vacancies; ionic species; migration; porous silicon

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APA (6th Edition):

Deka, S. S. (2015). Memristance Phenomenon in TiO2-Porous Silicon Nanocomposites. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu//available/etd-03232015-123729/ ;

Chicago Manual of Style (16th Edition):

Deka, Suruj Sambhav. “Memristance Phenomenon in TiO2-Porous Silicon Nanocomposites.” 2015. Masters Thesis, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu//available/etd-03232015-123729/ ;.

MLA Handbook (7th Edition):

Deka, Suruj Sambhav. “Memristance Phenomenon in TiO2-Porous Silicon Nanocomposites.” 2015. Web. 29 Mar 2020.

Vancouver:

Deka SS. Memristance Phenomenon in TiO2-Porous Silicon Nanocomposites. [Internet] [Masters thesis]. Vanderbilt University; 2015. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu//available/etd-03232015-123729/ ;.

Council of Science Editors:

Deka SS. Memristance Phenomenon in TiO2-Porous Silicon Nanocomposites. [Masters Thesis]. Vanderbilt University; 2015. Available from: http://etd.library.vanderbilt.edu//available/etd-03232015-123729/ ;

17. Trippe, James Michael. A technique for predicting the muon induced upset cross section in submicron MOS devices using proton tests and simulation.

Degree: MS, Electrical Engineering, 2014, Vanderbilt University

 Muons produced by cosmic rays in the upper atmosphere can induce single event upsets in modern technology nodes. Consequently, errors caused by muons have become… (more)

Subjects/Keywords: radiation; SEU; proton; muon

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APA (6th Edition):

Trippe, J. M. (2014). A technique for predicting the muon induced upset cross section in submicron MOS devices using proton tests and simulation. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-05212014-111356/ ;

Chicago Manual of Style (16th Edition):

Trippe, James Michael. “A technique for predicting the muon induced upset cross section in submicron MOS devices using proton tests and simulation.” 2014. Masters Thesis, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-05212014-111356/ ;.

MLA Handbook (7th Edition):

Trippe, James Michael. “A technique for predicting the muon induced upset cross section in submicron MOS devices using proton tests and simulation.” 2014. Web. 29 Mar 2020.

Vancouver:

Trippe JM. A technique for predicting the muon induced upset cross section in submicron MOS devices using proton tests and simulation. [Internet] [Masters thesis]. Vanderbilt University; 2014. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-05212014-111356/ ;.

Council of Science Editors:

Trippe JM. A technique for predicting the muon induced upset cross section in submicron MOS devices using proton tests and simulation. [Masters Thesis]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-05212014-111356/ ;

18. Benakanakere Sheshadri, Vijay. Upset trends in flip-flop designs at deep submicron technologies.

Degree: MS, Electrical Engineering, 2010, Vanderbilt University

 Advances in fabrication technologies for semiconductor integrated circuits (ICs) have resulted in sub-100 nm feature sizes. Along with this desired reduction in dimension has come… (more)

Subjects/Keywords: Critical Charge; DICE; Q8FF; Charge threshold plot; MRED

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APA (6th Edition):

Benakanakere Sheshadri, V. (2010). Upset trends in flip-flop designs at deep submicron technologies. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-09062010-120803/ ;

Chicago Manual of Style (16th Edition):

Benakanakere Sheshadri, Vijay. “Upset trends in flip-flop designs at deep submicron technologies.” 2010. Masters Thesis, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-09062010-120803/ ;.

MLA Handbook (7th Edition):

Benakanakere Sheshadri, Vijay. “Upset trends in flip-flop designs at deep submicron technologies.” 2010. Web. 29 Mar 2020.

Vancouver:

Benakanakere Sheshadri V. Upset trends in flip-flop designs at deep submicron technologies. [Internet] [Masters thesis]. Vanderbilt University; 2010. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-09062010-120803/ ;.

Council of Science Editors:

Benakanakere Sheshadri V. Upset trends in flip-flop designs at deep submicron technologies. [Masters Thesis]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-09062010-120803/ ;

19. Bennett, William Geoffrey. Efficient characterization of transient pulse shapes from radiation induced upsets.

Degree: MS, Electrical Engineering, 2012, Vanderbilt University

 Single Events Upsets (SEU) have long been a concern of the space and aviation fields. An SEU occurs when the logic state of a data-storage… (more)

Subjects/Keywords: efficient characterization; prompt response; fast transient; drift transport; SEE; single-event effects; charge collection; Monte-Carlo radiation transport code

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APA (6th Edition):

Bennett, W. G. (2012). Efficient characterization of transient pulse shapes from radiation induced upsets. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-06302012-151952/ ;

Chicago Manual of Style (16th Edition):

Bennett, William Geoffrey. “Efficient characterization of transient pulse shapes from radiation induced upsets.” 2012. Masters Thesis, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-06302012-151952/ ;.

MLA Handbook (7th Edition):

Bennett, William Geoffrey. “Efficient characterization of transient pulse shapes from radiation induced upsets.” 2012. Web. 29 Mar 2020.

Vancouver:

Bennett WG. Efficient characterization of transient pulse shapes from radiation induced upsets. [Internet] [Masters thesis]. Vanderbilt University; 2012. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-06302012-151952/ ;.

Council of Science Editors:

Bennett WG. Efficient characterization of transient pulse shapes from radiation induced upsets. [Masters Thesis]. Vanderbilt University; 2012. Available from: http://etd.library.vanderbilt.edu/available/etd-06302012-151952/ ;

20. Samsel, Isaak Knox. Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors.

Degree: MS, Electrical Engineering, 2014, Vanderbilt University

 Single-event effects (SEEs) in microelectronic devices present a serious reliability concern for space-based applications, where electronic components are exposed to highly energetic ionizing radiation. Single-event… (more)

Subjects/Keywords: HEMTs; single-event effects (SEEs); MOS-HEMTs; Gallium Nitride

…III.4: Custom-milled high-speed package fabricated at Vanderbilt University specifically for… 

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APA (6th Edition):

Samsel, I. K. (2014). Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07292014-091850/ ;

Chicago Manual of Style (16th Edition):

Samsel, Isaak Knox. “Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors.” 2014. Masters Thesis, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-07292014-091850/ ;.

MLA Handbook (7th Edition):

Samsel, Isaak Knox. “Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors.” 2014. Web. 29 Mar 2020.

Vancouver:

Samsel IK. Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors. [Internet] [Masters thesis]. Vanderbilt University; 2014. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-07292014-091850/ ;.

Council of Science Editors:

Samsel IK. Charge collection mechanisms in AlGaN/GaN MOS high electron mobility transistors. [Masters Thesis]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-07292014-091850/ ;

21. Wang, Pengfei. X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices.

Degree: MS, Electrical Engineering, 2017, Vanderbilt University

 Total ionizing dose effects are investigated on a physically unclonable function (PUF) based on CMOS breakdown. Devices irradiated to 2.0 Mrad(SiO2) show less than 11%… (more)

Subjects/Keywords: X-ray; total ionizing dose; proton; oxide breakdown; physically unclonable function; hardware security

…Pelletron accelerator at Vanderbilt University, as shown in Fig. 3-6. The beam size was sufficient… …accelerator at Vanderbilt University. 27 CHAPTER IV Radiation Effects on BD-PUFs Space systems… 

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APA (6th Edition):

Wang, P. (2017). X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11172017-143451/ ;

Chicago Manual of Style (16th Edition):

Wang, Pengfei. “X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices.” 2017. Masters Thesis, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-11172017-143451/ ;.

MLA Handbook (7th Edition):

Wang, Pengfei. “X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices.” 2017. Web. 29 Mar 2020.

Vancouver:

Wang P. X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices. [Internet] [Masters thesis]. Vanderbilt University; 2017. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-11172017-143451/ ;.

Council of Science Editors:

Wang P. X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices. [Masters Thesis]. Vanderbilt University; 2017. Available from: http://etd.library.vanderbilt.edu/available/etd-11172017-143451/ ;

22. Warren, Kevin Mark. Sensitive Volume Models For Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environments.

Degree: PhD, Electrical Engineering, 2010, Vanderbilt University

 The multiple sensitive volume model is a spatial and mathematical description that relates energy deposited by a quantum of ionizing radiation to charge collection at… (more)

Subjects/Keywords: soft error rate; sensitive volume; radiation reliability; radiation effects; radiation effects; single event upset

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APA (6th Edition):

Warren, K. M. (2010). Sensitive Volume Models For Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environments. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-06302010-123902/ ;

Chicago Manual of Style (16th Edition):

Warren, Kevin Mark. “Sensitive Volume Models For Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environments.” 2010. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-06302010-123902/ ;.

MLA Handbook (7th Edition):

Warren, Kevin Mark. “Sensitive Volume Models For Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environments.” 2010. Web. 29 Mar 2020.

Vancouver:

Warren KM. Sensitive Volume Models For Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environments. [Internet] [Doctoral dissertation]. Vanderbilt University; 2010. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-06302010-123902/ ;.

Council of Science Editors:

Warren KM. Sensitive Volume Models For Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environments. [Doctoral Dissertation]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-06302010-123902/ ;

23. Pellish, Jonathan Allen. Bulk Silicon-Germanium Heterojunction Bipolar Transistor Process Feature Implications for Single-Event Effects Analysis and Charge Collection Mechanisms.

Degree: PhD, Electrical Engineering, 2008, Vanderbilt University

 Silicon-germanium heterojunction bipolar transistor (SiGe HBT) BiCMOS technology is recognized by the space electronics community for its potential to transform high-speed microelectronic applications by monolithic… (more)

Subjects/Keywords: single event transient; single event effects; pulsed laser; microbeam; sige hbt; silicon germanium; Bipolar transistors  – Effect of radiation on  – Testing; Junction transistors  – Effect of radiation on  – Testing; Heavy ions; Space environment; Radiation hardening

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APA (6th Edition):

Pellish, J. A. (2008). Bulk Silicon-Germanium Heterojunction Bipolar Transistor Process Feature Implications for Single-Event Effects Analysis and Charge Collection Mechanisms. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-10202008-144701/ ;

Chicago Manual of Style (16th Edition):

Pellish, Jonathan Allen. “Bulk Silicon-Germanium Heterojunction Bipolar Transistor Process Feature Implications for Single-Event Effects Analysis and Charge Collection Mechanisms.” 2008. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-10202008-144701/ ;.

MLA Handbook (7th Edition):

Pellish, Jonathan Allen. “Bulk Silicon-Germanium Heterojunction Bipolar Transistor Process Feature Implications for Single-Event Effects Analysis and Charge Collection Mechanisms.” 2008. Web. 29 Mar 2020.

Vancouver:

Pellish JA. Bulk Silicon-Germanium Heterojunction Bipolar Transistor Process Feature Implications for Single-Event Effects Analysis and Charge Collection Mechanisms. [Internet] [Doctoral dissertation]. Vanderbilt University; 2008. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-10202008-144701/ ;.

Council of Science Editors:

Pellish JA. Bulk Silicon-Germanium Heterojunction Bipolar Transistor Process Feature Implications for Single-Event Effects Analysis and Charge Collection Mechanisms. [Doctoral Dissertation]. Vanderbilt University; 2008. Available from: http://etd.library.vanderbilt.edu/available/etd-10202008-144701/ ;

24. Tipton, Alan Douglas. On the Impact of Device Orientation on the Multiple Cell Upset Radiation Response in Nanoscale Integrated Circuits.

Degree: PhD, Electrical Engineering, 2008, Vanderbilt University

 Soft errors in integrated circuits (ICs) are a critical problem facing state-of-the-art technologies. In both the terrestrial and space environment, the source of soft errors… (more)

Subjects/Keywords: SRAM; radiation effects; multiple cell upset; multiple bit upset; Heavy ions; Integrated circuits  – Effect of radiation on; softer errors; Neutrons; Radiation hardening

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APA (6th Edition):

Tipton, A. D. (2008). On the Impact of Device Orientation on the Multiple Cell Upset Radiation Response in Nanoscale Integrated Circuits. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11132008-162941/ ;

Chicago Manual of Style (16th Edition):

Tipton, Alan Douglas. “On the Impact of Device Orientation on the Multiple Cell Upset Radiation Response in Nanoscale Integrated Circuits.” 2008. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-11132008-162941/ ;.

MLA Handbook (7th Edition):

Tipton, Alan Douglas. “On the Impact of Device Orientation on the Multiple Cell Upset Radiation Response in Nanoscale Integrated Circuits.” 2008. Web. 29 Mar 2020.

Vancouver:

Tipton AD. On the Impact of Device Orientation on the Multiple Cell Upset Radiation Response in Nanoscale Integrated Circuits. [Internet] [Doctoral dissertation]. Vanderbilt University; 2008. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-11132008-162941/ ;.

Council of Science Editors:

Tipton AD. On the Impact of Device Orientation on the Multiple Cell Upset Radiation Response in Nanoscale Integrated Circuits. [Doctoral Dissertation]. Vanderbilt University; 2008. Available from: http://etd.library.vanderbilt.edu/available/etd-11132008-162941/ ;

25. Howe, Christina L. The Radiation Response of Focal Plane Arrays.

Degree: PhD, Electrical Engineering, 2008, Vanderbilt University

 Using Monte Carlo based simulations, the proton-induced energy deposition in a silicon PIN focal plane array was analyzed, and the importance of considering the materials… (more)

Subjects/Keywords: direct ionization; MRED; Monte Carlo; single event transient; focal plane array; energy deposition; Geant4; nuclear reactions; Focal planes  – Testing; Optical detectors  – Testing; Radiation hardening; Protons; Energy dissipation  – Mathematical models

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APA (6th Edition):

Howe, C. L. (2008). The Radiation Response of Focal Plane Arrays. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12042008-130923/ ;

Chicago Manual of Style (16th Edition):

Howe, Christina L. “The Radiation Response of Focal Plane Arrays.” 2008. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-12042008-130923/ ;.

MLA Handbook (7th Edition):

Howe, Christina L. “The Radiation Response of Focal Plane Arrays.” 2008. Web. 29 Mar 2020.

Vancouver:

Howe CL. The Radiation Response of Focal Plane Arrays. [Internet] [Doctoral dissertation]. Vanderbilt University; 2008. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-12042008-130923/ ;.

Council of Science Editors:

Howe CL. The Radiation Response of Focal Plane Arrays. [Doctoral Dissertation]. Vanderbilt University; 2008. Available from: http://etd.library.vanderbilt.edu/available/etd-12042008-130923/ ;

26. El Mamouni, Farah. Single-event-transient effects in sub-70 nm bulk and SOI FinFETs.

Degree: PhD, Electrical Engineering, 2012, Vanderbilt University

 In this thesis, single event transient (SET) effects in sub-70 nm bulk and SOI FinFETs are investigated through topside and backside laser and heavy ion… (more)

Subjects/Keywords: single event effects.; electronic devices; Radiation effects

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APA (6th Edition):

El Mamouni, F. (2012). Single-event-transient effects in sub-70 nm bulk and SOI FinFETs. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07092012-155625/ ;

Chicago Manual of Style (16th Edition):

El Mamouni, Farah. “Single-event-transient effects in sub-70 nm bulk and SOI FinFETs.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-07092012-155625/ ;.

MLA Handbook (7th Edition):

El Mamouni, Farah. “Single-event-transient effects in sub-70 nm bulk and SOI FinFETs.” 2012. Web. 29 Mar 2020.

Vancouver:

El Mamouni F. Single-event-transient effects in sub-70 nm bulk and SOI FinFETs. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-07092012-155625/ ;.

Council of Science Editors:

El Mamouni F. Single-event-transient effects in sub-70 nm bulk and SOI FinFETs. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://etd.library.vanderbilt.edu/available/etd-07092012-155625/ ;

27. Clemens, Michael Andrew. Energy deposition mechanisms for proton- and neutron-induced single event upsets in modern electronic devices.

Degree: PhD, Physics, 2012, Vanderbilt University

 As the dimensions in modern integrated circuits (ICs) become smaller, electronic devices become more susceptible to failure due to radiation effects. One type of effect,… (more)

Subjects/Keywords: proton radiation effects; neutron radiation effects; high-Z materials; single event mechanisms; single event effects; Monte Carlo; energy deposition

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APA (6th Edition):

Clemens, M. A. (2012). Energy deposition mechanisms for proton- and neutron-induced single event upsets in modern electronic devices. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03162012-145223/ ;

Chicago Manual of Style (16th Edition):

Clemens, Michael Andrew. “Energy deposition mechanisms for proton- and neutron-induced single event upsets in modern electronic devices.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-03162012-145223/ ;.

MLA Handbook (7th Edition):

Clemens, Michael Andrew. “Energy deposition mechanisms for proton- and neutron-induced single event upsets in modern electronic devices.” 2012. Web. 29 Mar 2020.

Vancouver:

Clemens MA. Energy deposition mechanisms for proton- and neutron-induced single event upsets in modern electronic devices. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-03162012-145223/ ;.

Council of Science Editors:

Clemens MA. Energy deposition mechanisms for proton- and neutron-induced single event upsets in modern electronic devices. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://etd.library.vanderbilt.edu/available/etd-03162012-145223/ ;

28. Hughart, David Russell. Variations in Radiation Response Due to Hydrogen: Mechanisms of Interface Trap Buildup and Annealing.

Degree: PhD, Electrical Engineering, 2012, Vanderbilt University

 Hydrogen produces variability in the radiation response of integrated circuits, whether incorporated in the oxide or present as a gas. The presence of molecular hydrogen… (more)

Subjects/Keywords: annealing; elevated temperature irradiation; low dose rate; hydrogen; interface traps; Radiation effects

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APA (6th Edition):

Hughart, D. R. (2012). Variations in Radiation Response Due to Hydrogen: Mechanisms of Interface Trap Buildup and Annealing. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12032012-190026/ ;

Chicago Manual of Style (16th Edition):

Hughart, David Russell. “Variations in Radiation Response Due to Hydrogen: Mechanisms of Interface Trap Buildup and Annealing.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-12032012-190026/ ;.

MLA Handbook (7th Edition):

Hughart, David Russell. “Variations in Radiation Response Due to Hydrogen: Mechanisms of Interface Trap Buildup and Annealing.” 2012. Web. 29 Mar 2020.

Vancouver:

Hughart DR. Variations in Radiation Response Due to Hydrogen: Mechanisms of Interface Trap Buildup and Annealing. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-12032012-190026/ ;.

Council of Science Editors:

Hughart DR. Variations in Radiation Response Due to Hydrogen: Mechanisms of Interface Trap Buildup and Annealing. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://etd.library.vanderbilt.edu/available/etd-12032012-190026/ ;

29. Ramachandran, Vishwanath. Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors.

Degree: PhD, Electrical Engineering, 2013, Vanderbilt University

 Single-event mechanisms in InAlSb/InAs/AlGaSb high electron mobility transistors (HEMTs) are identified and investigated. Single-event transients are characterized using broadbeam and microbeam experiments along with 2-D… (more)

Subjects/Keywords: High Electron Mobility Transistor; HEMT; single-event effects; radiation effects; III-V; compound semiconductor

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APA (6th Edition):

Ramachandran, V. (2013). Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-02012013-134911/ ;

Chicago Manual of Style (16th Edition):

Ramachandran, Vishwanath. “Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors.” 2013. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-02012013-134911/ ;.

MLA Handbook (7th Edition):

Ramachandran, Vishwanath. “Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors.” 2013. Web. 29 Mar 2020.

Vancouver:

Ramachandran V. Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors. [Internet] [Doctoral dissertation]. Vanderbilt University; 2013. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-02012013-134911/ ;.

Council of Science Editors:

Ramachandran V. Single-Event Mechanisms in InAlSb/InAs/AlGaSb High Electron Mobility Transistors. [Doctoral Dissertation]. Vanderbilt University; 2013. Available from: http://etd.library.vanderbilt.edu/available/etd-02012013-134911/ ;

30. Sierawski, Brian David. The Role of Singly-Charged Particles in Microelectronics Reliability.

Degree: PhD, Electrical Engineering, 2011, Vanderbilt University

 Lightly ionizing particles in any radiation environment have the potential to induce single event upsets in scaled CMOS technologies. As microelectronic devices become smaller and… (more)

Subjects/Keywords: proton; muon; direct ionization; single event upset; soft error; memory

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Sierawski, B. D. (2011). The Role of Singly-Charged Particles in Microelectronics Reliability. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12012011-134348/ ;

Chicago Manual of Style (16th Edition):

Sierawski, Brian David. “The Role of Singly-Charged Particles in Microelectronics Reliability.” 2011. Doctoral Dissertation, Vanderbilt University. Accessed March 29, 2020. http://etd.library.vanderbilt.edu/available/etd-12012011-134348/ ;.

MLA Handbook (7th Edition):

Sierawski, Brian David. “The Role of Singly-Charged Particles in Microelectronics Reliability.” 2011. Web. 29 Mar 2020.

Vancouver:

Sierawski BD. The Role of Singly-Charged Particles in Microelectronics Reliability. [Internet] [Doctoral dissertation]. Vanderbilt University; 2011. [cited 2020 Mar 29]. Available from: http://etd.library.vanderbilt.edu/available/etd-12012011-134348/ ;.

Council of Science Editors:

Sierawski BD. The Role of Singly-Charged Particles in Microelectronics Reliability. [Doctoral Dissertation]. Vanderbilt University; 2011. Available from: http://etd.library.vanderbilt.edu/available/etd-12012011-134348/ ;

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