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You searched for +publisher:"Vanderbilt University" +contributor:("Lloyd W. Massengill"). Showing records 1 – 30 of 32 total matches.

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Vanderbilt University

1. Blaine, Raymond Wesley. The Design of Single-Event Hardened Bias Circuits.

Degree: MS, Electrical Engineering, 2011, Vanderbilt University

 Bias circuits (e.g. current sources) provide essential global signals in analog and mixed-signal design. Ideally, a bias circuit should be invariant over operating conditions such… (more)

Subjects/Keywords: single-event; analog; mixed-signal; radiation

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APA (6th Edition):

Blaine, R. W. (2011). The Design of Single-Event Hardened Bias Circuits. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-04042011-192430/ ;

Chicago Manual of Style (16th Edition):

Blaine, Raymond Wesley. “The Design of Single-Event Hardened Bias Circuits.” 2011. Masters Thesis, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-04042011-192430/ ;.

MLA Handbook (7th Edition):

Blaine, Raymond Wesley. “The Design of Single-Event Hardened Bias Circuits.” 2011. Web. 13 Oct 2019.

Vancouver:

Blaine RW. The Design of Single-Event Hardened Bias Circuits. [Internet] [Masters thesis]. Vanderbilt University; 2011. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-04042011-192430/ ;.

Council of Science Editors:

Blaine RW. The Design of Single-Event Hardened Bias Circuits. [Masters Thesis]. Vanderbilt University; 2011. Available from: http://etd.library.vanderbilt.edu/available/etd-04042011-192430/ ;


Vanderbilt University

2. Chetia, Jugantor. An efficient AVF estimation technique using circuit partitioning.

Degree: MS, Electrical Engineering, 2012, Vanderbilt University

 Soft errors induced by radiation particles are increasingly becoming a source of concern for reliable design of VLSI systems. An important parameter to quantify the… (more)

Subjects/Keywords: AVF; statistical fault injection; circuit partitioning

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APA (6th Edition):

Chetia, J. (2012). An efficient AVF estimation technique using circuit partitioning. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-01252012-174557/ ;

Chicago Manual of Style (16th Edition):

Chetia, Jugantor. “An efficient AVF estimation technique using circuit partitioning.” 2012. Masters Thesis, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-01252012-174557/ ;.

MLA Handbook (7th Edition):

Chetia, Jugantor. “An efficient AVF estimation technique using circuit partitioning.” 2012. Web. 13 Oct 2019.

Vancouver:

Chetia J. An efficient AVF estimation technique using circuit partitioning. [Internet] [Masters thesis]. Vanderbilt University; 2012. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-01252012-174557/ ;.

Council of Science Editors:

Chetia J. An efficient AVF estimation technique using circuit partitioning. [Masters Thesis]. Vanderbilt University; 2012. Available from: http://etd.library.vanderbilt.edu/available/etd-01252012-174557/ ;


Vanderbilt University

3. Chen, Yanran. Single-event characterization of digitally controlled oscillators (DCOS).

Degree: MS, Electrical Engineering, 2014, Vanderbilt University

 Single-event effects (SEEs) in Digitally Controlled Oscillators (DCOs) are characterized in this work. Single-event strikes happening in the flipflops (FFs) of the registers of the… (more)

Subjects/Keywords: SEEs; ADPLLs; DCOs

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APA (6th Edition):

Chen, Y. (2014). Single-event characterization of digitally controlled oscillators (DCOS). (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu//available/etd-03242014-215625/ ;

Chicago Manual of Style (16th Edition):

Chen, Yanran. “Single-event characterization of digitally controlled oscillators (DCOS).” 2014. Masters Thesis, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu//available/etd-03242014-215625/ ;.

MLA Handbook (7th Edition):

Chen, Yanran. “Single-event characterization of digitally controlled oscillators (DCOS).” 2014. Web. 13 Oct 2019.

Vancouver:

Chen Y. Single-event characterization of digitally controlled oscillators (DCOS). [Internet] [Masters thesis]. Vanderbilt University; 2014. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu//available/etd-03242014-215625/ ;.

Council of Science Editors:

Chen Y. Single-event characterization of digitally controlled oscillators (DCOS). [Masters Thesis]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu//available/etd-03242014-215625/ ;


Vanderbilt University

4. Shetler, Kevin Joseph. Temperature and Total Ionizing Dose Characterization of a Voltage Reference in a 180 nm CMOS Technology.

Degree: MS, Electrical Engineering, 2016, Vanderbilt University

 A voltage reference is a critical component of analog and mixed signal systems because it provides a global signal used for a variety of system… (more)

Subjects/Keywords: TID; radiation-hardened-by-design

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APA (6th Edition):

Shetler, K. J. (2016). Temperature and Total Ionizing Dose Characterization of a Voltage Reference in a 180 nm CMOS Technology. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-04082016-164141/ ;

Chicago Manual of Style (16th Edition):

Shetler, Kevin Joseph. “Temperature and Total Ionizing Dose Characterization of a Voltage Reference in a 180 nm CMOS Technology.” 2016. Masters Thesis, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-04082016-164141/ ;.

MLA Handbook (7th Edition):

Shetler, Kevin Joseph. “Temperature and Total Ionizing Dose Characterization of a Voltage Reference in a 180 nm CMOS Technology.” 2016. Web. 13 Oct 2019.

Vancouver:

Shetler KJ. Temperature and Total Ionizing Dose Characterization of a Voltage Reference in a 180 nm CMOS Technology. [Internet] [Masters thesis]. Vanderbilt University; 2016. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-04082016-164141/ ;.

Council of Science Editors:

Shetler KJ. Temperature and Total Ionizing Dose Characterization of a Voltage Reference in a 180 nm CMOS Technology. [Masters Thesis]. Vanderbilt University; 2016. Available from: http://etd.library.vanderbilt.edu/available/etd-04082016-164141/ ;


Vanderbilt University

5. Poe, Grant Douglas. A RADIATION-TOLERANT D FLIP-FLOP DESIGNED FOR LOW-VOLTAGE APPLICATIONS.

Degree: MS, Electrical Engineering, 2019, Vanderbilt University

 A radiation-hardened by design (RHBD) D flip-flop is presented that demonstrates a tolerance to radiation induced single-event upsets while maintaining desirable electrical performance characteristics over… (more)

Subjects/Keywords: D Flip-Flop; Single-Event Upset; Radiation Hardened By Design

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APA (6th Edition):

Poe, G. D. (2019). A RADIATION-TOLERANT D FLIP-FLOP DESIGNED FOR LOW-VOLTAGE APPLICATIONS. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07182019-231235/ ;

Chicago Manual of Style (16th Edition):

Poe, Grant Douglas. “A RADIATION-TOLERANT D FLIP-FLOP DESIGNED FOR LOW-VOLTAGE APPLICATIONS.” 2019. Masters Thesis, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-07182019-231235/ ;.

MLA Handbook (7th Edition):

Poe, Grant Douglas. “A RADIATION-TOLERANT D FLIP-FLOP DESIGNED FOR LOW-VOLTAGE APPLICATIONS.” 2019. Web. 13 Oct 2019.

Vancouver:

Poe GD. A RADIATION-TOLERANT D FLIP-FLOP DESIGNED FOR LOW-VOLTAGE APPLICATIONS. [Internet] [Masters thesis]. Vanderbilt University; 2019. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-07182019-231235/ ;.

Council of Science Editors:

Poe GD. A RADIATION-TOLERANT D FLIP-FLOP DESIGNED FOR LOW-VOLTAGE APPLICATIONS. [Masters Thesis]. Vanderbilt University; 2019. Available from: http://etd.library.vanderbilt.edu/available/etd-07182019-231235/ ;


Vanderbilt University

6. Dinkins, Cody Adam. Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology.

Degree: MS, Electrical Engineering, 2011, Vanderbilt University

 Single-event upsets and errors are of growing concern as technology scales toward smaller transistor sizes. While smaller transistors allow for greater on-chip integration, this comes… (more)

Subjects/Keywords: characterization; transient; latchup; single event; 180 nm

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APA (6th Edition):

Dinkins, C. A. (2011). Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-04082011-122316/ ;

Chicago Manual of Style (16th Edition):

Dinkins, Cody Adam. “Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology.” 2011. Masters Thesis, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-04082011-122316/ ;.

MLA Handbook (7th Edition):

Dinkins, Cody Adam. “Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology.” 2011. Web. 13 Oct 2019.

Vancouver:

Dinkins CA. Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology. [Internet] [Masters thesis]. Vanderbilt University; 2011. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-04082011-122316/ ;.

Council of Science Editors:

Dinkins CA. Qualitative Characterization of Single-event Transient and Latchup Trends in 180 nm CMOS Technology. [Masters Thesis]. Vanderbilt University; 2011. Available from: http://etd.library.vanderbilt.edu/available/etd-04082011-122316/ ;


Vanderbilt University

7. Olson, Brian David. Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters.

Degree: PhD, Electrical Engineering, 2010, Vanderbilt University

 Analog-to-digital converters (ADCs) are necessary circuits in many space, military, and medical circuit applications. Intelligence, surveillance, reconnaissance, and communication missions all require high performance ADCs.… (more)

Subjects/Keywords: single-events; SEU; SEE; RHBD; radiation hardened by design; ADC; single-event effects; analog-to-digital converters

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APA (6th Edition):

Olson, B. D. (2010). Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12102010-152348/ ;

Chicago Manual of Style (16th Edition):

Olson, Brian David. “Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters.” 2010. Doctoral Dissertation, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-12102010-152348/ ;.

MLA Handbook (7th Edition):

Olson, Brian David. “Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters.” 2010. Web. 13 Oct 2019.

Vancouver:

Olson BD. Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters. [Internet] [Doctoral dissertation]. Vanderbilt University; 2010. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-12102010-152348/ ;.

Council of Science Editors:

Olson BD. Single-Event Effect Mitigation in Pipelined Analog-to-Digital Converters. [Doctoral Dissertation]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-12102010-152348/ ;


Vanderbilt University

8. Zhang, Hangfang. Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 Modern ICs need to be designed with proper designer-controllable factors to meet power, speed and single-event (SE) performance requirements in different applications. Commercial fabrication houses… (more)

Subjects/Keywords: Single Event; Threshold Voltage; FinFET; Design Parameter; Temperature; Angular Incidence; Flip-Flop; Well Structure

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APA (6th Edition):

Zhang, H. (2018). Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-04072018-123506/ ;

Chicago Manual of Style (16th Edition):

Zhang, Hangfang. “Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-04072018-123506/ ;.

MLA Handbook (7th Edition):

Zhang, Hangfang. “Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies.” 2018. Web. 13 Oct 2019.

Vancouver:

Zhang H. Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-04072018-123506/ ;.

Council of Science Editors:

Zhang H. Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-04072018-123506/ ;


Vanderbilt University

9. Kauppila, Amy Vaughn. Analysis of parameter variation impact on the single event response in sub-100nm CMOS storage cells.

Degree: PhD, Electrical Engineering, 2012, Vanderbilt University

 Current deep sub-micron technologies are particularly susceptible to single events. The challenge derives from a conglomeration of effects that affect circuitsâ radiation response. For instance,… (more)

Subjects/Keywords: single event upset; parameter variation

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APA (6th Edition):

Kauppila, A. V. (2012). Analysis of parameter variation impact on the single event response in sub-100nm CMOS storage cells. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-04092012-111410/ ;

Chicago Manual of Style (16th Edition):

Kauppila, Amy Vaughn. “Analysis of parameter variation impact on the single event response in sub-100nm CMOS storage cells.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-04092012-111410/ ;.

MLA Handbook (7th Edition):

Kauppila, Amy Vaughn. “Analysis of parameter variation impact on the single event response in sub-100nm CMOS storage cells.” 2012. Web. 13 Oct 2019.

Vancouver:

Kauppila AV. Analysis of parameter variation impact on the single event response in sub-100nm CMOS storage cells. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-04092012-111410/ ;.

Council of Science Editors:

Kauppila AV. Analysis of parameter variation impact on the single event response in sub-100nm CMOS storage cells. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://etd.library.vanderbilt.edu/available/etd-04092012-111410/ ;


Vanderbilt University

10. Chen, Yanran. Analysis and hardening of all-digital phase-locked loops (ADPLLs) to single-event radiation effects.

Degree: PhD, Electrical Engineering, 2017, Vanderbilt University

 In deep sub-micron CMOS technologies, all-digital phase-locked loops (ADPLLs) are favored over conventional analog or mixed-signal phase-locked loops (A/MS) PLLs for providing the clock signals… (more)

Subjects/Keywords: Single-Event Upsets (SEU); All-digital Phase-locked Loops (ADPLLs); Single-Event Effects (SEE)

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APA (6th Edition):

Chen, Y. (2017). Analysis and hardening of all-digital phase-locked loops (ADPLLs) to single-event radiation effects. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu//available/etd-09222017-180229/ ;

Chicago Manual of Style (16th Edition):

Chen, Yanran. “Analysis and hardening of all-digital phase-locked loops (ADPLLs) to single-event radiation effects.” 2017. Doctoral Dissertation, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu//available/etd-09222017-180229/ ;.

MLA Handbook (7th Edition):

Chen, Yanran. “Analysis and hardening of all-digital phase-locked loops (ADPLLs) to single-event radiation effects.” 2017. Web. 13 Oct 2019.

Vancouver:

Chen Y. Analysis and hardening of all-digital phase-locked loops (ADPLLs) to single-event radiation effects. [Internet] [Doctoral dissertation]. Vanderbilt University; 2017. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu//available/etd-09222017-180229/ ;.

Council of Science Editors:

Chen Y. Analysis and hardening of all-digital phase-locked loops (ADPLLs) to single-event radiation effects. [Doctoral Dissertation]. Vanderbilt University; 2017. Available from: http://etd.library.vanderbilt.edu//available/etd-09222017-180229/ ;


Vanderbilt University

11. Nsengiyumva, Patrick. Characterization of the CMOS FinFET structure on single-event effects â basic charge collection mechanisms and soft error modes.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 With technology scaling at 22 nm and beyond, the semiconductor industry has successfully transitioned to 3D multi-gate transistors (i.e., FinFETs) due to the excellent FinFET… (more)

Subjects/Keywords: RHBD; Charge Collection Mechanisms; Integrated Circuit; SEE Simulations; Soft Error Modes; Bulk Technologies; CMOS IC; Angular SEE Mechanisms; Rad-hard; Three-Dimensional Transistor; Multi-Gate Transistor; Planar Technologies; Radiation Effects; Single-Event Upset (SEU); Spatial and Temporal SEE Considerations; SET Pulse Width; Single-Event Transient (SET); FinFET Geometric and Orientation Dependence; FinFET Structure; Single-Event Effects (SEE); FinFET; Digital Circuits; Alpha Particle Data; Upset Cross-Section; Flip-flop; Heavy-Ion Data; TCAD; Advanced Technologies

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APA (6th Edition):

Nsengiyumva, P. (2018). Characterization of the CMOS FinFET structure on single-event effects â basic charge collection mechanisms and soft error modes. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03202018-160105/ ;

Chicago Manual of Style (16th Edition):

Nsengiyumva, Patrick. “Characterization of the CMOS FinFET structure on single-event effects â basic charge collection mechanisms and soft error modes.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-03202018-160105/ ;.

MLA Handbook (7th Edition):

Nsengiyumva, Patrick. “Characterization of the CMOS FinFET structure on single-event effects â basic charge collection mechanisms and soft error modes.” 2018. Web. 13 Oct 2019.

Vancouver:

Nsengiyumva P. Characterization of the CMOS FinFET structure on single-event effects â basic charge collection mechanisms and soft error modes. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-03202018-160105/ ;.

Council of Science Editors:

Nsengiyumva P. Characterization of the CMOS FinFET structure on single-event effects â basic charge collection mechanisms and soft error modes. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-03202018-160105/ ;

12. Haeffner, Timothy D. Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process.

Degree: MS, Electrical Engineering, 2015, Vanderbilt University

 The impacts of total ionizing dose (TID), temperature and RF bias on the DC and RF performance of a commercial 32 nm RF SOI CMOS… (more)

Subjects/Keywords: RADIO FREQUENCY; TEMPERATURE; SILICON-ON-INSULATOR; CMOS; IRRADIATION

…Institute for Space and Defense Electronics at Vanderbilt University) were used to automate… …employed at The Institute for Space and Defense Electronics at Vanderbilt University). The S… 

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APA (6th Edition):

Haeffner, T. D. (2015). Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03302015-110300/ ;

Chicago Manual of Style (16th Edition):

Haeffner, Timothy D. “Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process.” 2015. Masters Thesis, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-03302015-110300/ ;.

MLA Handbook (7th Edition):

Haeffner, Timothy D. “Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process.” 2015. Web. 13 Oct 2019.

Vancouver:

Haeffner TD. Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process. [Internet] [Masters thesis]. Vanderbilt University; 2015. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-03302015-110300/ ;.

Council of Science Editors:

Haeffner TD. Irradiation and temperature characterization for a 32nm RF silicon-on-insulator CMOS process. [Masters Thesis]. Vanderbilt University; 2015. Available from: http://etd.library.vanderbilt.edu/available/etd-03302015-110300/ ;

13. Maharrey, Jeffrey Alan. Characterization of Heavy-Ion Induced Single Event Transients in 32nm and 45nm Silicon-on-Insulator Technologies.

Degree: MS, Electrical Engineering, 2014, Vanderbilt University

 Single event transients (SET) have become increasingly important to characterize since operating frequencies have surpassed 100 MHz. A common way to characterize SETs for a… (more)

Subjects/Keywords: SOI; SET

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APA (6th Edition):

Maharrey, J. A. (2014). Characterization of Heavy-Ion Induced Single Event Transients in 32nm and 45nm Silicon-on-Insulator Technologies. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-05132014-085901/ ;

Chicago Manual of Style (16th Edition):

Maharrey, Jeffrey Alan. “Characterization of Heavy-Ion Induced Single Event Transients in 32nm and 45nm Silicon-on-Insulator Technologies.” 2014. Masters Thesis, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-05132014-085901/ ;.

MLA Handbook (7th Edition):

Maharrey, Jeffrey Alan. “Characterization of Heavy-Ion Induced Single Event Transients in 32nm and 45nm Silicon-on-Insulator Technologies.” 2014. Web. 13 Oct 2019.

Vancouver:

Maharrey JA. Characterization of Heavy-Ion Induced Single Event Transients in 32nm and 45nm Silicon-on-Insulator Technologies. [Internet] [Masters thesis]. Vanderbilt University; 2014. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-05132014-085901/ ;.

Council of Science Editors:

Maharrey JA. Characterization of Heavy-Ion Induced Single Event Transients in 32nm and 45nm Silicon-on-Insulator Technologies. [Masters Thesis]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-05132014-085901/ ;

14. Adeleke, Adeola. Logic repair and soft error rate reduction using approximate logic functions.

Degree: MS, Electrical Engineering, 2012, Vanderbilt University

 Continuing CMOS devices scaling causes an increase in the vulnerability of integrated circuits to radiation-induced soft errors. Furthermore, as transistor density increases, the probability of… (more)

Subjects/Keywords: functions; logic; approximate; logic; repair

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APA (6th Edition):

Adeleke, A. (2012). Logic repair and soft error rate reduction using approximate logic functions. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03122012-095419/ ;

Chicago Manual of Style (16th Edition):

Adeleke, Adeola. “Logic repair and soft error rate reduction using approximate logic functions.” 2012. Masters Thesis, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-03122012-095419/ ;.

MLA Handbook (7th Edition):

Adeleke, Adeola. “Logic repair and soft error rate reduction using approximate logic functions.” 2012. Web. 13 Oct 2019.

Vancouver:

Adeleke A. Logic repair and soft error rate reduction using approximate logic functions. [Internet] [Masters thesis]. Vanderbilt University; 2012. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-03122012-095419/ ;.

Council of Science Editors:

Adeleke A. Logic repair and soft error rate reduction using approximate logic functions. [Masters Thesis]. Vanderbilt University; 2012. Available from: http://etd.library.vanderbilt.edu/available/etd-03122012-095419/ ;

15. Warren, Kevin Mark. Sensitive Volume Models For Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environments.

Degree: PhD, Electrical Engineering, 2010, Vanderbilt University

 The multiple sensitive volume model is a spatial and mathematical description that relates energy deposited by a quantum of ionizing radiation to charge collection at… (more)

Subjects/Keywords: soft error rate; sensitive volume; radiation reliability; radiation effects; radiation effects; single event upset

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APA (6th Edition):

Warren, K. M. (2010). Sensitive Volume Models For Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environments. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-06302010-123902/ ;

Chicago Manual of Style (16th Edition):

Warren, Kevin Mark. “Sensitive Volume Models For Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environments.” 2010. Doctoral Dissertation, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-06302010-123902/ ;.

MLA Handbook (7th Edition):

Warren, Kevin Mark. “Sensitive Volume Models For Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environments.” 2010. Web. 13 Oct 2019.

Vancouver:

Warren KM. Sensitive Volume Models For Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environments. [Internet] [Doctoral dissertation]. Vanderbilt University; 2010. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-06302010-123902/ ;.

Council of Science Editors:

Warren KM. Sensitive Volume Models For Single Event Upset Analysis and Rate Prediction for Space, Atmospheric, and Terrestrial Radiation Environments. [Doctoral Dissertation]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-06302010-123902/ ;

16. Tipton, Alan Douglas. On the Impact of Device Orientation on the Multiple Cell Upset Radiation Response in Nanoscale Integrated Circuits.

Degree: PhD, Electrical Engineering, 2008, Vanderbilt University

 Soft errors in integrated circuits (ICs) are a critical problem facing state-of-the-art technologies. In both the terrestrial and space environment, the source of soft errors… (more)

Subjects/Keywords: SRAM; radiation effects; multiple cell upset; multiple bit upset; Heavy ions; Integrated circuits  – Effect of radiation on; softer errors; Neutrons; Radiation hardening

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APA (6th Edition):

Tipton, A. D. (2008). On the Impact of Device Orientation on the Multiple Cell Upset Radiation Response in Nanoscale Integrated Circuits. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11132008-162941/ ;

Chicago Manual of Style (16th Edition):

Tipton, Alan Douglas. “On the Impact of Device Orientation on the Multiple Cell Upset Radiation Response in Nanoscale Integrated Circuits.” 2008. Doctoral Dissertation, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-11132008-162941/ ;.

MLA Handbook (7th Edition):

Tipton, Alan Douglas. “On the Impact of Device Orientation on the Multiple Cell Upset Radiation Response in Nanoscale Integrated Circuits.” 2008. Web. 13 Oct 2019.

Vancouver:

Tipton AD. On the Impact of Device Orientation on the Multiple Cell Upset Radiation Response in Nanoscale Integrated Circuits. [Internet] [Doctoral dissertation]. Vanderbilt University; 2008. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-11132008-162941/ ;.

Council of Science Editors:

Tipton AD. On the Impact of Device Orientation on the Multiple Cell Upset Radiation Response in Nanoscale Integrated Circuits. [Doctoral Dissertation]. Vanderbilt University; 2008. Available from: http://etd.library.vanderbilt.edu/available/etd-11132008-162941/ ;

17. Kauppila, Jeffrey Scott. Layout-Aware Modeling and Analysis Methodologies for Transient Radiation Effects on Integrated Circuit Electronics.

Degree: PhD, Electrical Engineering, 2015, Vanderbilt University

 The development of integrated circuits intended for use in transient radiation environments must account for the impact of the environment on the operation of the… (more)

Subjects/Keywords: CAD Tools; Semiconductor Device Modeling; Process Design Kit; Gummel Poon; BSIMSOI; MEXTRAM; Radiation Modeling; TCAD; BSIM4; Bias-Dependent Modeling; Dose Rate Effects; Compact Models; Single Event Effects; Compact Model; BJT; MOSFET; Layout-Aware Modeling; Layout-Aware Analysis; SPICE; Layout; Radiation Effects; Circuit Simulation; Radiation-Enabled Model; Single-Event Transient; Single-Event Upset; Charge Sharing; Computational Modeling

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APA (6th Edition):

Kauppila, J. S. (2015). Layout-Aware Modeling and Analysis Methodologies for Transient Radiation Effects on Integrated Circuit Electronics. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03152015-142439/ ;

Chicago Manual of Style (16th Edition):

Kauppila, Jeffrey Scott. “Layout-Aware Modeling and Analysis Methodologies for Transient Radiation Effects on Integrated Circuit Electronics.” 2015. Doctoral Dissertation, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-03152015-142439/ ;.

MLA Handbook (7th Edition):

Kauppila, Jeffrey Scott. “Layout-Aware Modeling and Analysis Methodologies for Transient Radiation Effects on Integrated Circuit Electronics.” 2015. Web. 13 Oct 2019.

Vancouver:

Kauppila JS. Layout-Aware Modeling and Analysis Methodologies for Transient Radiation Effects on Integrated Circuit Electronics. [Internet] [Doctoral dissertation]. Vanderbilt University; 2015. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-03152015-142439/ ;.

Council of Science Editors:

Kauppila JS. Layout-Aware Modeling and Analysis Methodologies for Transient Radiation Effects on Integrated Circuit Electronics. [Doctoral Dissertation]. Vanderbilt University; 2015. Available from: http://etd.library.vanderbilt.edu/available/etd-03152015-142439/ ;

18. Maillard, Pierre. Single event transient modeling and mitigation techniques for mixed-signal delay locked loop (DLL) and clock circuits.

Degree: PhD, Electrical Engineering, 2014, Vanderbilt University

 The purpose of this PhD work has been to investigate, model, test, develop and provide hardening techniques and guidelines for the mitigation of single event… (more)

Subjects/Keywords: Analog Mixed Signals; Delay Locked Loop; Radiation Hardening By Design; Single Event Transients

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APA (6th Edition):

Maillard, P. (2014). Single event transient modeling and mitigation techniques for mixed-signal delay locked loop (DLL) and clock circuits. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03292014-104403/ ;

Chicago Manual of Style (16th Edition):

Maillard, Pierre. “Single event transient modeling and mitigation techniques for mixed-signal delay locked loop (DLL) and clock circuits.” 2014. Doctoral Dissertation, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-03292014-104403/ ;.

MLA Handbook (7th Edition):

Maillard, Pierre. “Single event transient modeling and mitigation techniques for mixed-signal delay locked loop (DLL) and clock circuits.” 2014. Web. 13 Oct 2019.

Vancouver:

Maillard P. Single event transient modeling and mitigation techniques for mixed-signal delay locked loop (DLL) and clock circuits. [Internet] [Doctoral dissertation]. Vanderbilt University; 2014. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-03292014-104403/ ;.

Council of Science Editors:

Maillard P. Single event transient modeling and mitigation techniques for mixed-signal delay locked loop (DLL) and clock circuits. [Doctoral Dissertation]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-03292014-104403/ ;

19. Jagannathan, Srikanth. TID characterization of high frequency RF circuits in NANO-CMOS technologies.

Degree: PhD, Electrical Engineering, 2013, Vanderbilt University

 Rapid downscaling of CMOS technology has resulted in significant improvement in the RF performance of Silicon MOSFETs. As a result, standard CMOS technology has become… (more)

Subjects/Keywords: RF; TID

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APA (6th Edition):

Jagannathan, S. (2013). TID characterization of high frequency RF circuits in NANO-CMOS technologies. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu//available/etd-11152013-150900/ ;

Chicago Manual of Style (16th Edition):

Jagannathan, Srikanth. “TID characterization of high frequency RF circuits in NANO-CMOS technologies.” 2013. Doctoral Dissertation, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu//available/etd-11152013-150900/ ;.

MLA Handbook (7th Edition):

Jagannathan, Srikanth. “TID characterization of high frequency RF circuits in NANO-CMOS technologies.” 2013. Web. 13 Oct 2019.

Vancouver:

Jagannathan S. TID characterization of high frequency RF circuits in NANO-CMOS technologies. [Internet] [Doctoral dissertation]. Vanderbilt University; 2013. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu//available/etd-11152013-150900/ ;.

Council of Science Editors:

Jagannathan S. TID characterization of high frequency RF circuits in NANO-CMOS technologies. [Doctoral Dissertation]. Vanderbilt University; 2013. Available from: http://etd.library.vanderbilt.edu//available/etd-11152013-150900/ ;

20. Amusan, Oluwole Ayodele. Effects of single-event-induced charge sharing in sub-100 nm bulk CMOS technologies.

Degree: PhD, Electrical Engineering, 2009, Vanderbilt University

 Sub-100 nm technologies are more vulnerable than older technologies to single event effects (SEE) due to Moore's Law scaling trend. The increased SEE vulnerability has… (more)

Subjects/Keywords: nodal spacing; single event circuit characterization; soft error cross-section; pulse-widths; guard-bands; Dual Interlocked Cell (DICE) latch; Radiation hardening; Space environment; charge sharing mitigation; heavy-ion; guard-rings; Metal oxide semiconductors Complementary  – Effect of radiation on

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APA (6th Edition):

Amusan, O. A. (2009). Effects of single-event-induced charge sharing in sub-100 nm bulk CMOS technologies. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-02162009-141344/ ;

Chicago Manual of Style (16th Edition):

Amusan, Oluwole Ayodele. “Effects of single-event-induced charge sharing in sub-100 nm bulk CMOS technologies.” 2009. Doctoral Dissertation, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-02162009-141344/ ;.

MLA Handbook (7th Edition):

Amusan, Oluwole Ayodele. “Effects of single-event-induced charge sharing in sub-100 nm bulk CMOS technologies.” 2009. Web. 13 Oct 2019.

Vancouver:

Amusan OA. Effects of single-event-induced charge sharing in sub-100 nm bulk CMOS technologies. [Internet] [Doctoral dissertation]. Vanderbilt University; 2009. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-02162009-141344/ ;.

Council of Science Editors:

Amusan OA. Effects of single-event-induced charge sharing in sub-100 nm bulk CMOS technologies. [Doctoral Dissertation]. Vanderbilt University; 2009. Available from: http://etd.library.vanderbilt.edu/available/etd-02162009-141344/ ;

21. Balasubramanian, Anupama. Measurement and analysis of single event induced crosstalk in nanoscale cmos technologies.

Degree: PhD, Electrical Engineering, 2008, Vanderbilt University

 The constant race for increasing the chip density in semiconductor integrated circuits has not only decreased the minimum device feature size but also the minimum… (more)

Subjects/Keywords: INTERCONNECT; RADIATION; CROSSTALK; SINGLE EVENT; CMOS; SIMULATION; 3D TCAD

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APA (6th Edition):

Balasubramanian, A. (2008). Measurement and analysis of single event induced crosstalk in nanoscale cmos technologies. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-08202008-122228/ ;

Chicago Manual of Style (16th Edition):

Balasubramanian, Anupama. “Measurement and analysis of single event induced crosstalk in nanoscale cmos technologies.” 2008. Doctoral Dissertation, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-08202008-122228/ ;.

MLA Handbook (7th Edition):

Balasubramanian, Anupama. “Measurement and analysis of single event induced crosstalk in nanoscale cmos technologies.” 2008. Web. 13 Oct 2019.

Vancouver:

Balasubramanian A. Measurement and analysis of single event induced crosstalk in nanoscale cmos technologies. [Internet] [Doctoral dissertation]. Vanderbilt University; 2008. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-08202008-122228/ ;.

Council of Science Editors:

Balasubramanian A. Measurement and analysis of single event induced crosstalk in nanoscale cmos technologies. [Doctoral Dissertation]. Vanderbilt University; 2008. Available from: http://etd.library.vanderbilt.edu/available/etd-08202008-122228/ ;

22. Gaspard, Nelson Joseph III. Single-Event Upset Technology Scaling Trends of Unhardened and Hardened Flip-Flops in Bulk CMOS.

Degree: PhD, Electrical Engineering, 2017, Vanderbilt University

 Alpha, heavy-ion, neutron, and proton experimental results from 130-nm to 28-nm technology nodes are establish single-event upset cross section trends in soft and hardened flip-flop… (more)

Subjects/Keywords: single event upset; CMOS; flip-flop; soft error

…the ACCRE computing cluster at Vanderbilt University [61]. This section covers… 

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APA (6th Edition):

Gaspard, N. J. I. (2017). Single-Event Upset Technology Scaling Trends of Unhardened and Hardened Flip-Flops in Bulk CMOS. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03162017-144405/ ;

Chicago Manual of Style (16th Edition):

Gaspard, Nelson Joseph III. “Single-Event Upset Technology Scaling Trends of Unhardened and Hardened Flip-Flops in Bulk CMOS.” 2017. Doctoral Dissertation, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-03162017-144405/ ;.

MLA Handbook (7th Edition):

Gaspard, Nelson Joseph III. “Single-Event Upset Technology Scaling Trends of Unhardened and Hardened Flip-Flops in Bulk CMOS.” 2017. Web. 13 Oct 2019.

Vancouver:

Gaspard NJI. Single-Event Upset Technology Scaling Trends of Unhardened and Hardened Flip-Flops in Bulk CMOS. [Internet] [Doctoral dissertation]. Vanderbilt University; 2017. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-03162017-144405/ ;.

Council of Science Editors:

Gaspard NJI. Single-Event Upset Technology Scaling Trends of Unhardened and Hardened Flip-Flops in Bulk CMOS. [Doctoral Dissertation]. Vanderbilt University; 2017. Available from: http://etd.library.vanderbilt.edu/available/etd-03162017-144405/ ;


Vanderbilt University

23. Nation, Sarah A. Pulsed Laser Irradiation for Discrete Component Dose-Rate Model Development.

Degree: MS, Electrical Engineering, 2008, Vanderbilt University

 Pulsed-laser irradiation is used to simulate dose-rate effects in discrete devices. A methodology is established to correlate laser pulse energy results to an equivalent dose… (more)

Subjects/Keywords: discrete device radiation modeling; pulsed laser radiation simulation; dose-rate effects; Weapons systems  – Computer simulation; Electronic apparatus and appliances  – Effect of radiation on; Electronic apparatus and appliances  – Effect of lasers on; Bipolar transistors  – Testing; Radiation hardening  – Computer simulation

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APA (6th Edition):

Nation, S. A. (2008). Pulsed Laser Irradiation for Discrete Component Dose-Rate Model Development. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12132007-160550/ ;

Chicago Manual of Style (16th Edition):

Nation, Sarah A. “Pulsed Laser Irradiation for Discrete Component Dose-Rate Model Development.” 2008. Masters Thesis, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-12132007-160550/ ;.

MLA Handbook (7th Edition):

Nation, Sarah A. “Pulsed Laser Irradiation for Discrete Component Dose-Rate Model Development.” 2008. Web. 13 Oct 2019.

Vancouver:

Nation SA. Pulsed Laser Irradiation for Discrete Component Dose-Rate Model Development. [Internet] [Masters thesis]. Vanderbilt University; 2008. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-12132007-160550/ ;.

Council of Science Editors:

Nation SA. Pulsed Laser Irradiation for Discrete Component Dose-Rate Model Development. [Masters Thesis]. Vanderbilt University; 2008. Available from: http://etd.library.vanderbilt.edu/available/etd-12132007-160550/ ;


Vanderbilt University

24. Climer, Kara Elizabeth. Simulation-Based Study of Single Event Transients in a SiGe BiCMOS Low Power Operational Amplifier.

Degree: MS, Electrical Engineering, 2008, Vanderbilt University

 Energy depositions from highly ionized particles in space environments can induce transient current (voltage) pulses in microelectronic devices, called Single Event Effects (SEEs). This thesis… (more)

Subjects/Keywords: guard ring; SiGe HBT; single event effect (SEE); charge collection; Operational amplifiers; Radiation hardening; Heterojunctions  – Design and construction

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APA (6th Edition):

Climer, K. E. (2008). Simulation-Based Study of Single Event Transients in a SiGe BiCMOS Low Power Operational Amplifier. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07252008-164559/ ;

Chicago Manual of Style (16th Edition):

Climer, Kara Elizabeth. “Simulation-Based Study of Single Event Transients in a SiGe BiCMOS Low Power Operational Amplifier.” 2008. Masters Thesis, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-07252008-164559/ ;.

MLA Handbook (7th Edition):

Climer, Kara Elizabeth. “Simulation-Based Study of Single Event Transients in a SiGe BiCMOS Low Power Operational Amplifier.” 2008. Web. 13 Oct 2019.

Vancouver:

Climer KE. Simulation-Based Study of Single Event Transients in a SiGe BiCMOS Low Power Operational Amplifier. [Internet] [Masters thesis]. Vanderbilt University; 2008. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-07252008-164559/ ;.

Council of Science Editors:

Climer KE. Simulation-Based Study of Single Event Transients in a SiGe BiCMOS Low Power Operational Amplifier. [Masters Thesis]. Vanderbilt University; 2008. Available from: http://etd.library.vanderbilt.edu/available/etd-07252008-164559/ ;


Vanderbilt University

25. Balasubramanian, Anitha. A Built-In Self-Test (BIST) Technique for Single-Event Transient Testing in Digital Circuits.

Degree: MS, Electrical Engineering, 2008, Vanderbilt University

 With shrinking device feature sizes, integrated circuits are becoming more vulnerable to Single-Event Transients (SETs). Characterizing error rates due to SETs is essential for choosing… (more)

Subjects/Keywords: single-event transient; random number generator; current starved inverters; single-event; Integrated circuits  – Effect of radiation on  – Testing; Radiation hardening

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APA (6th Edition):

Balasubramanian, A. (2008). A Built-In Self-Test (BIST) Technique for Single-Event Transient Testing in Digital Circuits. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07292008-093802/ ;

Chicago Manual of Style (16th Edition):

Balasubramanian, Anitha. “A Built-In Self-Test (BIST) Technique for Single-Event Transient Testing in Digital Circuits.” 2008. Masters Thesis, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-07292008-093802/ ;.

MLA Handbook (7th Edition):

Balasubramanian, Anitha. “A Built-In Self-Test (BIST) Technique for Single-Event Transient Testing in Digital Circuits.” 2008. Web. 13 Oct 2019.

Vancouver:

Balasubramanian A. A Built-In Self-Test (BIST) Technique for Single-Event Transient Testing in Digital Circuits. [Internet] [Masters thesis]. Vanderbilt University; 2008. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-07292008-093802/ ;.

Council of Science Editors:

Balasubramanian A. A Built-In Self-Test (BIST) Technique for Single-Event Transient Testing in Digital Circuits. [Masters Thesis]. Vanderbilt University; 2008. Available from: http://etd.library.vanderbilt.edu/available/etd-07292008-093802/ ;


Vanderbilt University

26. Ahlbin, Jonathan Ragnar. Characterization of Single-Event Effects in Combinational Logic Using the C-CREST Technique.

Degree: MS, Electrical Engineering, 2009, Vanderbilt University

  As technology nodes scale smaller, digital circuits are able to run at higher clock frequencies, but they can become more susceptible to single-event induced… (more)

Subjects/Keywords: single-event upset; DICE latch; window of vulnerability; single-event; Combinational logic; Integrated circuits  – Effect of radiation on  – Testing

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APA (6th Edition):

Ahlbin, J. R. (2009). Characterization of Single-Event Effects in Combinational Logic Using the C-CREST Technique. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu//available/etd-04162009-141433/ ;

Chicago Manual of Style (16th Edition):

Ahlbin, Jonathan Ragnar. “Characterization of Single-Event Effects in Combinational Logic Using the C-CREST Technique.” 2009. Masters Thesis, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu//available/etd-04162009-141433/ ;.

MLA Handbook (7th Edition):

Ahlbin, Jonathan Ragnar. “Characterization of Single-Event Effects in Combinational Logic Using the C-CREST Technique.” 2009. Web. 13 Oct 2019.

Vancouver:

Ahlbin JR. Characterization of Single-Event Effects in Combinational Logic Using the C-CREST Technique. [Internet] [Masters thesis]. Vanderbilt University; 2009. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu//available/etd-04162009-141433/ ;.

Council of Science Editors:

Ahlbin JR. Characterization of Single-Event Effects in Combinational Logic Using the C-CREST Technique. [Masters Thesis]. Vanderbilt University; 2009. Available from: http://etd.library.vanderbilt.edu//available/etd-04162009-141433/ ;


Vanderbilt University

27. Jagannathan, Srikanth. Portable Behavioral Modeling of TID Degradation of Voltage Feedback Op-Amps.

Degree: MS, Electrical Engineering, 2009, Vanderbilt University

 Presently the tools available for predicting the effect of radiation on microelectronic circuits rely on SPICE models to simulate post-irradiation parameter and performance changes. However,… (more)

Subjects/Keywords: Behavioral modeling; TID; macro model; LM124; op amp; VHDL-AMS

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APA (6th Edition):

Jagannathan, S. (2009). Portable Behavioral Modeling of TID Degradation of Voltage Feedback Op-Amps. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07132009-181624/ ;

Chicago Manual of Style (16th Edition):

Jagannathan, Srikanth. “Portable Behavioral Modeling of TID Degradation of Voltage Feedback Op-Amps.” 2009. Masters Thesis, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-07132009-181624/ ;.

MLA Handbook (7th Edition):

Jagannathan, Srikanth. “Portable Behavioral Modeling of TID Degradation of Voltage Feedback Op-Amps.” 2009. Web. 13 Oct 2019.

Vancouver:

Jagannathan S. Portable Behavioral Modeling of TID Degradation of Voltage Feedback Op-Amps. [Internet] [Masters thesis]. Vanderbilt University; 2009. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-07132009-181624/ ;.

Council of Science Editors:

Jagannathan S. Portable Behavioral Modeling of TID Degradation of Voltage Feedback Op-Amps. [Masters Thesis]. Vanderbilt University; 2009. Available from: http://etd.library.vanderbilt.edu/available/etd-07132009-181624/ ;


Vanderbilt University

28. Amusan, Oluwole Ayodele. Analysis of single event vulnerabilities in a 130 nm CMOS technology.

Degree: MS, Electrical Engineering, 2006, Vanderbilt University

 The amount of charge required to represent a logic state in CMOS digital circuits has been reduced dramatically with the scaling of supply voltage and… (more)

Subjects/Keywords: Metal oxide semiconductors Complementary  – Design and construction; deep submicron; Radiation hardening; Metal oxide semiconductors Complementary  – Effect of radiation on

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APA (6th Edition):

Amusan, O. A. (2006). Analysis of single event vulnerabilities in a 130 nm CMOS technology. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-09012006-114826/ ;

Chicago Manual of Style (16th Edition):

Amusan, Oluwole Ayodele. “Analysis of single event vulnerabilities in a 130 nm CMOS technology.” 2006. Masters Thesis, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-09012006-114826/ ;.

MLA Handbook (7th Edition):

Amusan, Oluwole Ayodele. “Analysis of single event vulnerabilities in a 130 nm CMOS technology.” 2006. Web. 13 Oct 2019.

Vancouver:

Amusan OA. Analysis of single event vulnerabilities in a 130 nm CMOS technology. [Internet] [Masters thesis]. Vanderbilt University; 2006. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-09012006-114826/ ;.

Council of Science Editors:

Amusan OA. Analysis of single event vulnerabilities in a 130 nm CMOS technology. [Masters Thesis]. Vanderbilt University; 2006. Available from: http://etd.library.vanderbilt.edu/available/etd-09012006-114826/ ;


Vanderbilt University

29. Casey, Megan Colleen. Single-Event Effects in Digital CMOS Circuits Operating at Ultra-Low Power.

Degree: PhD, Electrical Engineering, 2009, Vanderbilt University

 With decreasing feature sizes, transistors are being added to ICs in consistently greater numbers, which is leading to dramatic increases in power consumption. Changing process… (more)

Subjects/Keywords: radiation effects; single-event effects; CMOS digital circuits; low-power circuits

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APA (6th Edition):

Casey, M. C. (2009). Single-Event Effects in Digital CMOS Circuits Operating at Ultra-Low Power. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12042009-210004/ ;

Chicago Manual of Style (16th Edition):

Casey, Megan Colleen. “Single-Event Effects in Digital CMOS Circuits Operating at Ultra-Low Power.” 2009. Doctoral Dissertation, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu/available/etd-12042009-210004/ ;.

MLA Handbook (7th Edition):

Casey, Megan Colleen. “Single-Event Effects in Digital CMOS Circuits Operating at Ultra-Low Power.” 2009. Web. 13 Oct 2019.

Vancouver:

Casey MC. Single-Event Effects in Digital CMOS Circuits Operating at Ultra-Low Power. [Internet] [Doctoral dissertation]. Vanderbilt University; 2009. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu/available/etd-12042009-210004/ ;.

Council of Science Editors:

Casey MC. Single-Event Effects in Digital CMOS Circuits Operating at Ultra-Low Power. [Doctoral Dissertation]. Vanderbilt University; 2009. Available from: http://etd.library.vanderbilt.edu/available/etd-12042009-210004/ ;


Vanderbilt University

30. Loveless, Thomas Daniel. A generalized single-event analysis and hardening options for mixed-signal phase-locked loop circuits.

Degree: PhD, Electrical Engineering, 2009, Vanderbilt University

 A reliability concern of growing interest in the microelectronics community is the deleterious effect of ionizing radiation. The so-called "single events" â single particles which… (more)

Subjects/Keywords: Phase-locked loops; Single-Event Effects; Radiation Effects; Single-Event Transients; Transients; Circuit analysis

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Loveless, T. D. (2009). A generalized single-event analysis and hardening options for mixed-signal phase-locked loop circuits. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu//available/etd-08262009-132854/ ;

Chicago Manual of Style (16th Edition):

Loveless, Thomas Daniel. “A generalized single-event analysis and hardening options for mixed-signal phase-locked loop circuits.” 2009. Doctoral Dissertation, Vanderbilt University. Accessed October 13, 2019. http://etd.library.vanderbilt.edu//available/etd-08262009-132854/ ;.

MLA Handbook (7th Edition):

Loveless, Thomas Daniel. “A generalized single-event analysis and hardening options for mixed-signal phase-locked loop circuits.” 2009. Web. 13 Oct 2019.

Vancouver:

Loveless TD. A generalized single-event analysis and hardening options for mixed-signal phase-locked loop circuits. [Internet] [Doctoral dissertation]. Vanderbilt University; 2009. [cited 2019 Oct 13]. Available from: http://etd.library.vanderbilt.edu//available/etd-08262009-132854/ ;.

Council of Science Editors:

Loveless TD. A generalized single-event analysis and hardening options for mixed-signal phase-locked loop circuits. [Doctoral Dissertation]. Vanderbilt University; 2009. Available from: http://etd.library.vanderbilt.edu//available/etd-08262009-132854/ ;

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