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You searched for +publisher:"Vanderbilt University" +contributor:("Daniel M. Fleetwood"). Showing records 1 – 30 of 41 total matches.

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Vanderbilt University

1. Danciu, Ioana. 1/f noise and aging effects on MOS transistors.

Degree: MS, Electrical Engineering, 2011, Vanderbilt University

 The 1/f noise magnitude of n-channel metal-oxide-semiconductor field effect transistors is found to decrease by up a factor of ~3 after 18 years of room-temperature… (more)

Subjects/Keywords: mos; aging

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APA (6th Edition):

Danciu, I. (2011). 1/f noise and aging effects on MOS transistors. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-10162011-211045/ ;

Chicago Manual of Style (16th Edition):

Danciu, Ioana. “1/f noise and aging effects on MOS transistors.” 2011. Masters Thesis, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-10162011-211045/ ;.

MLA Handbook (7th Edition):

Danciu, Ioana. “1/f noise and aging effects on MOS transistors.” 2011. Web. 09 Apr 2020.

Vancouver:

Danciu I. 1/f noise and aging effects on MOS transistors. [Internet] [Masters thesis]. Vanderbilt University; 2011. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-10162011-211045/ ;.

Council of Science Editors:

Danciu I. 1/f noise and aging effects on MOS transistors. [Masters Thesis]. Vanderbilt University; 2011. Available from: http://etd.library.vanderbilt.edu/available/etd-10162011-211045/ ;


Vanderbilt University

2. Hughart, David Russell. The role of hydrogen in defect formation and passivation in bipolar and MOS oxides.

Degree: MS, Electrical Engineering, 2010, Vanderbilt University

 Ambient hydrogen has been shown to enhance the degradation of several types of linear bipolar devices. Recently, it has been seen that hydrogen exposure can… (more)

Subjects/Keywords: radiation effects; Aging; annealing; gated lateral bipolar transistor; hardness assurance; hydrogen; interface traps; oxide trapped charge

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APA (6th Edition):

Hughart, D. R. (2010). The role of hydrogen in defect formation and passivation in bipolar and MOS oxides. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07262010-121643/ ;

Chicago Manual of Style (16th Edition):

Hughart, David Russell. “The role of hydrogen in defect formation and passivation in bipolar and MOS oxides.” 2010. Masters Thesis, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-07262010-121643/ ;.

MLA Handbook (7th Edition):

Hughart, David Russell. “The role of hydrogen in defect formation and passivation in bipolar and MOS oxides.” 2010. Web. 09 Apr 2020.

Vancouver:

Hughart DR. The role of hydrogen in defect formation and passivation in bipolar and MOS oxides. [Internet] [Masters thesis]. Vanderbilt University; 2010. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-07262010-121643/ ;.

Council of Science Editors:

Hughart DR. The role of hydrogen in defect formation and passivation in bipolar and MOS oxides. [Masters Thesis]. Vanderbilt University; 2010. Available from: http://etd.library.vanderbilt.edu/available/etd-07262010-121643/ ;


Vanderbilt University

3. Francis, Sarah Ashley. Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices.

Degree: PhD, Electrical Engineering, 2011, Vanderbilt University

 Defects that lie at or near the semiconductor-oxide interface of MOS transistors were characterized using 1/f noise and charge pumping measurements. The frequency, gate-voltage, and… (more)

Subjects/Keywords: charge pumping; radiation effects; 1/f noise

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APA (6th Edition):

Francis, S. A. (2011). Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11102011-122043/ ;

Chicago Manual of Style (16th Edition):

Francis, Sarah Ashley. “Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices.” 2011. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-11102011-122043/ ;.

MLA Handbook (7th Edition):

Francis, Sarah Ashley. “Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices.” 2011. Web. 09 Apr 2020.

Vancouver:

Francis SA. Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices. [Internet] [Doctoral dissertation]. Vanderbilt University; 2011. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-11102011-122043/ ;.

Council of Science Editors:

Francis SA. Aging and Irradiation Response of 1/f Noise in Metal Oxide Semiconductor Devices. [Doctoral Dissertation]. Vanderbilt University; 2011. Available from: http://etd.library.vanderbilt.edu/available/etd-11102011-122043/ ;


Vanderbilt University

4. Roy, Tania. Reliability-limiting defects in GaN/AlGaN high electron mobility transistors.

Degree: PhD, Electrical Engineering, 2011, Vanderbilt University

 The reliability of GaN/AlGaN HEMTs, fabricated using MOCVD, and MBE under Ga-rich, N-rich and ammonia-rich conditions, is studied using high field stress experiments and low… (more)

Subjects/Keywords: RF stress; Ga-N divacancy; oxygen DX center; N antisite; Ga vacancy; HEMT; GaN; DC stress; 1/f noise

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APA (6th Edition):

Roy, T. (2011). Reliability-limiting defects in GaN/AlGaN high electron mobility transistors. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-10122011-111627/ ;

Chicago Manual of Style (16th Edition):

Roy, Tania. “Reliability-limiting defects in GaN/AlGaN high electron mobility transistors.” 2011. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-10122011-111627/ ;.

MLA Handbook (7th Edition):

Roy, Tania. “Reliability-limiting defects in GaN/AlGaN high electron mobility transistors.” 2011. Web. 09 Apr 2020.

Vancouver:

Roy T. Reliability-limiting defects in GaN/AlGaN high electron mobility transistors. [Internet] [Doctoral dissertation]. Vanderbilt University; 2011. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-10122011-111627/ ;.

Council of Science Editors:

Roy T. Reliability-limiting defects in GaN/AlGaN high electron mobility transistors. [Doctoral Dissertation]. Vanderbilt University; 2011. Available from: http://etd.library.vanderbilt.edu/available/etd-10122011-111627/ ;


Vanderbilt University

5. Cao, Yunhao. A study of optoelectronic properties of carbon nanomaterials: transistors, sensors, and beyond.

Degree: PhD, Electrical Engineering, 2013, Vanderbilt University

 The aims of this dissertation are to develop synthesis techniques for carbon nanomaterials, to investigate their electrical and optical properties, and to explore their applications… (more)

Subjects/Keywords: photocurrent; optoelectronics; growth; carbon nanotubes; graphene

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APA (6th Edition):

Cao, Y. (2013). A study of optoelectronic properties of carbon nanomaterials: transistors, sensors, and beyond. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu//available/etd-08082013-235242/ ;

Chicago Manual of Style (16th Edition):

Cao, Yunhao. “A study of optoelectronic properties of carbon nanomaterials: transistors, sensors, and beyond.” 2013. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu//available/etd-08082013-235242/ ;.

MLA Handbook (7th Edition):

Cao, Yunhao. “A study of optoelectronic properties of carbon nanomaterials: transistors, sensors, and beyond.” 2013. Web. 09 Apr 2020.

Vancouver:

Cao Y. A study of optoelectronic properties of carbon nanomaterials: transistors, sensors, and beyond. [Internet] [Doctoral dissertation]. Vanderbilt University; 2013. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu//available/etd-08082013-235242/ ;.

Council of Science Editors:

Cao Y. A study of optoelectronic properties of carbon nanomaterials: transistors, sensors, and beyond. [Doctoral Dissertation]. Vanderbilt University; 2013. Available from: http://etd.library.vanderbilt.edu//available/etd-08082013-235242/ ;


Vanderbilt University

6. Mukherjee, Shubhajit. Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs.

Degree: PhD, Interdisciplinary Materials Science, 2015, Vanderbilt University

 Gallium Nitride or GaN-based high electron mobility transistors (HEMTs) is currently the most promising device technology in several key military and civilian applications due to… (more)

Subjects/Keywords: hot electron; dehydrogenation; semi-ON; defects; GaN HEMT; degradation; EMC; DFT; k.p

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APA (6th Edition):

Mukherjee, S. (2015). Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11052015-010923/ ;

Chicago Manual of Style (16th Edition):

Mukherjee, Shubhajit. “Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs.” 2015. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-11052015-010923/ ;.

MLA Handbook (7th Edition):

Mukherjee, Shubhajit. “Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs.” 2015. Web. 09 Apr 2020.

Vancouver:

Mukherjee S. Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs. [Internet] [Doctoral dissertation]. Vanderbilt University; 2015. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-11052015-010923/ ;.

Council of Science Editors:

Mukherjee S. Physical Mechanisms Affecting Hot Carrier-Induced semi-ON State Degradation in Gallium Nitride HEMTs. [Doctoral Dissertation]. Vanderbilt University; 2015. Available from: http://etd.library.vanderbilt.edu/available/etd-11052015-010923/ ;


Vanderbilt University

7. Jiang, Rong. Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 During the last three decades, GaN-based HEMTs are increasingly developed for their excellent application for high power, high frequency and radiation-tolerance. The improvements in GaN-based… (more)

Subjects/Keywords: AlGaN/GaN; HEMT; 1/f noise; hot carrier degradation; TID effects; Proton Irradiation

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APA (6th Edition):

Jiang, R. (2018). Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-01082018-190426/ ;

Chicago Manual of Style (16th Edition):

Jiang, Rong. “Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-01082018-190426/ ;.

MLA Handbook (7th Edition):

Jiang, Rong. “Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs.” 2018. Web. 09 Apr 2020.

Vancouver:

Jiang R. Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-01082018-190426/ ;.

Council of Science Editors:

Jiang R. Bias Dependence of Radiation Response and Reliability of AlGaN/GaN HEMTs. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-01082018-190426/ ;


Vanderbilt University

8. Duan, Guoxing. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.

Degree: PhD, Electrical Engineering, 2016, Vanderbilt University

 The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases has been evaluated. Negative bias irradiation leads to the worst-case degradation.… (more)

Subjects/Keywords: HfO2; SiGe; low frequency noise; NBTI; TID

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APA (6th Edition):

Duan, G. (2016). Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;

Chicago Manual of Style (16th Edition):

Duan, Guoxing. “Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.” 2016. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;.

MLA Handbook (7th Edition):

Duan, Guoxing. “Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices.” 2016. Web. 09 Apr 2020.

Vancouver:

Duan G. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. [Internet] [Doctoral dissertation]. Vanderbilt University; 2016. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;.

Council of Science Editors:

Duan G. Radiation effects, negative-bias-temperature instability, and low-frequency 1/f noise in SiGe/SiO2/HfO2 pMOS devices. [Doctoral Dissertation]. Vanderbilt University; 2016. Available from: http://etd.library.vanderbilt.edu/available/etd-07212016-224032/ ;


Vanderbilt University

9. Miller, Kevin Joseph. Hybrid Silicon-Vanadium Dioxide Photonic Devices for Optical Modulation.

Degree: PhD, Interdisciplinary Materials Science, 2018, Vanderbilt University

 The integration of optical components with silicon complementary metalâoxideâsemiconductor (CMOS) technology may lead to the increase in information carrying capacity and reduction in power consumption… (more)

Subjects/Keywords: vanadium dioxide; optical modulation; silicon photonics

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APA (6th Edition):

Miller, K. J. (2018). Hybrid Silicon-Vanadium Dioxide Photonic Devices for Optical Modulation. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03262018-180125/ ;

Chicago Manual of Style (16th Edition):

Miller, Kevin Joseph. “Hybrid Silicon-Vanadium Dioxide Photonic Devices for Optical Modulation.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-03262018-180125/ ;.

MLA Handbook (7th Edition):

Miller, Kevin Joseph. “Hybrid Silicon-Vanadium Dioxide Photonic Devices for Optical Modulation.” 2018. Web. 09 Apr 2020.

Vancouver:

Miller KJ. Hybrid Silicon-Vanadium Dioxide Photonic Devices for Optical Modulation. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-03262018-180125/ ;.

Council of Science Editors:

Miller KJ. Hybrid Silicon-Vanadium Dioxide Photonic Devices for Optical Modulation. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-03262018-180125/ ;


Vanderbilt University

10. Wang, Pan. RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS.

Degree: PhD, Electrical Engineering, 2019, Vanderbilt University

 Metal oxide semiconductor field effect transistors (MOSFETs) are the building blocks of modern integrated circuits. The semiconductor industry needs to continue scaling the dimensions of… (more)

Subjects/Keywords: Defects; Low frequency noise; Radiation Effects; Microelectronic devices; Two dimensional materials

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APA (6th Edition):

Wang, P. (2019). RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07192019-104923/ ;

Chicago Manual of Style (16th Edition):

Wang, Pan. “RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS.” 2019. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-07192019-104923/ ;.

MLA Handbook (7th Edition):

Wang, Pan. “RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS.” 2019. Web. 09 Apr 2020.

Vancouver:

Wang P. RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS. [Internet] [Doctoral dissertation]. Vanderbilt University; 2019. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-07192019-104923/ ;.

Council of Science Editors:

Wang P. RADIATION EFFECTS AND LOW FREQUENCY NOISE OF MICROELECTRONIC DEVICES BASED ON TWO DIMENSIONAL MATERIALS. [Doctoral Dissertation]. Vanderbilt University; 2019. Available from: http://etd.library.vanderbilt.edu/available/etd-07192019-104923/ ;


Vanderbilt University

11. Liao, Wenjun. Radiation effects on microelectromechanical systems.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 The effects of ionizing radiation and displacement damage are two significant reliability concerns for transducer applications in radiation environments. Microelectromechanical systems (MEMS) are considered as… (more)

Subjects/Keywords: MEMS; Total-Ionizaton-Dose; Displacement Damage; Piezoelectrc; Electrothermal; 2D Materials; Radiation Effects; Monte Carlo

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APA (6th Edition):

Liao, W. (2018). Radiation effects on microelectromechanical systems. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;

Chicago Manual of Style (16th Edition):

Liao, Wenjun. “Radiation effects on microelectromechanical systems.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;.

MLA Handbook (7th Edition):

Liao, Wenjun. “Radiation effects on microelectromechanical systems.” 2018. Web. 09 Apr 2020.

Vancouver:

Liao W. Radiation effects on microelectromechanical systems. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;.

Council of Science Editors:

Liao W. Radiation effects on microelectromechanical systems. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-08222018-165404/ ;


Vanderbilt University

12. Gaur, Girija U. Quantum dot integrated silicon photonic devices for optical sensor applications.

Degree: PhD, Electrical Engineering, 2015, Vanderbilt University

 Optical sensors have been ubiquitous in laboratories for several decades for applications including healthcare diagnostics, personalized radiation safety badges, and space radiation dosimeters. However, there… (more)

Subjects/Keywords: silicon; porous; optical; radiation; biosensors; sensors; quantum dots

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APA (6th Edition):

Gaur, G. U. (2015). Quantum dot integrated silicon photonic devices for optical sensor applications. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu//available/etd-11172015-132918/ ;

Chicago Manual of Style (16th Edition):

Gaur, Girija U. “Quantum dot integrated silicon photonic devices for optical sensor applications.” 2015. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu//available/etd-11172015-132918/ ;.

MLA Handbook (7th Edition):

Gaur, Girija U. “Quantum dot integrated silicon photonic devices for optical sensor applications.” 2015. Web. 09 Apr 2020.

Vancouver:

Gaur GU. Quantum dot integrated silicon photonic devices for optical sensor applications. [Internet] [Doctoral dissertation]. Vanderbilt University; 2015. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu//available/etd-11172015-132918/ ;.

Council of Science Editors:

Gaur GU. Quantum dot integrated silicon photonic devices for optical sensor applications. [Doctoral Dissertation]. Vanderbilt University; 2015. Available from: http://etd.library.vanderbilt.edu//available/etd-11172015-132918/ ;


Vanderbilt University

13. Arutt, Charles Nathan. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 A T-shaped, asymmetric, piezoresistive, micromachined, resonating cantilever is used to investigate the effects of 10-keV X-rays on resonance frequency and resistivity. Total-ionizing-dose-induced resonance frequency and… (more)

Subjects/Keywords: Semiconductors; Ionizing Radiation; Total Ionizing Dose; X-rays; Silicon; Hydrogen; MEMS; Resonator; Piezoresistivity; Radiation Effects

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APA (6th Edition):

Arutt, C. N. (2018). Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;

Chicago Manual of Style (16th Edition):

Arutt, Charles Nathan. “Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;.

MLA Handbook (7th Edition):

Arutt, Charles Nathan. “Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers.” 2018. Web. 09 Apr 2020.

Vancouver:

Arutt CN. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;.

Council of Science Editors:

Arutt CN. Mechanisms of Ionizing Radiation Response in Silicon Piezoresistive Micromachined Cantilevers. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-05182018-170119/ ;

14. McCurdy, Michael William Adelino. 1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors.

Degree: MS, Electrical Engineering, 2017, Vanderbilt University

 Three commercially available GaN-based HEMT RF power devices were irradiated with 1.8 MeV protons in three operational modes. The operational modes were semi-on, fully-on and… (more)

Subjects/Keywords: RF; HEMT; GaN; protons

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APA (6th Edition):

McCurdy, M. W. A. (2017). 1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-09212017-152911/ ;

Chicago Manual of Style (16th Edition):

McCurdy, Michael William Adelino. “1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors.” 2017. Masters Thesis, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-09212017-152911/ ;.

MLA Handbook (7th Edition):

McCurdy, Michael William Adelino. “1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors.” 2017. Web. 09 Apr 2020.

Vancouver:

McCurdy MWA. 1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors. [Internet] [Masters thesis]. Vanderbilt University; 2017. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-09212017-152911/ ;.

Council of Science Editors:

McCurdy MWA. 1.8 MeV proton response of thermally stabilized gallium nitride RF power transistors. [Masters Thesis]. Vanderbilt University; 2017. Available from: http://etd.library.vanderbilt.edu/available/etd-09212017-152911/ ;

15. Duan, Guoxing. Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices.

Degree: MS, Electrical Engineering, 2014, Vanderbilt University

 The total ionizing dose (TID) response of HfO2-SiO2/SiGe pMOS FinFETs under different irradiation biases have been evaluated. Negative bias irradiation leads to the worst-case degradation… (more)

Subjects/Keywords: interface traps; HfO2; SiGe; NBTI; TID; oxide-trap charge

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APA (6th Edition):

Duan, G. (2014). Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03252014-171550/ ;

Chicago Manual of Style (16th Edition):

Duan, Guoxing. “Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices.” 2014. Masters Thesis, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-03252014-171550/ ;.

MLA Handbook (7th Edition):

Duan, Guoxing. “Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices.” 2014. Web. 09 Apr 2020.

Vancouver:

Duan G. Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices. [Internet] [Masters thesis]. Vanderbilt University; 2014. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-03252014-171550/ ;.

Council of Science Editors:

Duan G. Total ionizing dose radiation effects and negative bias temperature instability on SiGe pMOS devices. [Masters Thesis]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-03252014-171550/ ;

16. Gorchichko, Mariia. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics.

Degree: MS, Electrical Engineering, 2019, Vanderbilt University

 Due to the advances in manufacturing and enhanced gate control of the transistor channel, FinFETs are commonly used in highly-scaled ICs. The geometry of the… (more)

Subjects/Keywords: FinFET; silicon-on-insulator (SOI); total ionizing dose (TID); low-frequency noise; random telegraph noise (RTN)

Vanderbilt University with the equipment of the Radiation Effects and Reliability group. 2.1… 

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APA (6th Edition):

Gorchichko, M. (2019). Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11142019-111120/ ;

Chicago Manual of Style (16th Edition):

Gorchichko, Mariia. “Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics.” 2019. Masters Thesis, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-11142019-111120/ ;.

MLA Handbook (7th Edition):

Gorchichko, Mariia. “Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics.” 2019. Web. 09 Apr 2020.

Vancouver:

Gorchichko M. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics. [Internet] [Masters thesis]. Vanderbilt University; 2019. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-11142019-111120/ ;.

Council of Science Editors:

Gorchichko M. Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2 Gate Dielectrics. [Masters Thesis]. Vanderbilt University; 2019. Available from: http://etd.library.vanderbilt.edu/available/etd-11142019-111120/ ;

17. Wang, Pengfei. X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices.

Degree: MS, Electrical Engineering, 2017, Vanderbilt University

 Total ionizing dose effects are investigated on a physically unclonable function (PUF) based on CMOS breakdown. Devices irradiated to 2.0 Mrad(SiO2) show less than 11%… (more)

Subjects/Keywords: X-ray; total ionizing dose; proton; oxide breakdown; physically unclonable function; hardware security

…Pelletron accelerator at Vanderbilt University, as shown in Fig. 3-6. The beam size was sufficient… …accelerator at Vanderbilt University. 27 CHAPTER IV Radiation Effects on BD-PUFs Space systems… 

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APA (6th Edition):

Wang, P. (2017). X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices. (Masters Thesis). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-11172017-143451/ ;

Chicago Manual of Style (16th Edition):

Wang, Pengfei. “X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices.” 2017. Masters Thesis, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-11172017-143451/ ;.

MLA Handbook (7th Edition):

Wang, Pengfei. “X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices.” 2017. Web. 09 Apr 2020.

Vancouver:

Wang P. X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices. [Internet] [Masters thesis]. Vanderbilt University; 2017. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-11172017-143451/ ;.

Council of Science Editors:

Wang P. X-ray and Proton Radiation Effects on 40 nm CMOS Physically Unclonable Function Devices. [Masters Thesis]. Vanderbilt University; 2017. Available from: http://etd.library.vanderbilt.edu/available/etd-11172017-143451/ ;

18. Bhandaru, Shweta. Material, Optical and Electro-optical Characterization of Si and Si-based Devices Under the Influence of High Energy Radiation.

Degree: PhD, Interdisciplinary Materials Science, 2015, Vanderbilt University

 Radiation effects studies performed on electronics typically consist of electrical characterization of device performance to analyze the impact of radiation damage. Very few studies have… (more)

Subjects/Keywords: High energy radiation effects; Thin oxide growth on Si; Si ring resonators; a-Si:H solar cells; porous a-Si:H

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APA (6th Edition):

Bhandaru, S. (2015). Material, Optical and Electro-optical Characterization of Si and Si-based Devices Under the Influence of High Energy Radiation. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-03232015-123555/ ;

Chicago Manual of Style (16th Edition):

Bhandaru, Shweta. “Material, Optical and Electro-optical Characterization of Si and Si-based Devices Under the Influence of High Energy Radiation.” 2015. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-03232015-123555/ ;.

MLA Handbook (7th Edition):

Bhandaru, Shweta. “Material, Optical and Electro-optical Characterization of Si and Si-based Devices Under the Influence of High Energy Radiation.” 2015. Web. 09 Apr 2020.

Vancouver:

Bhandaru S. Material, Optical and Electro-optical Characterization of Si and Si-based Devices Under the Influence of High Energy Radiation. [Internet] [Doctoral dissertation]. Vanderbilt University; 2015. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-03232015-123555/ ;.

Council of Science Editors:

Bhandaru S. Material, Optical and Electro-optical Characterization of Si and Si-based Devices Under the Influence of High Energy Radiation. [Doctoral Dissertation]. Vanderbilt University; 2015. Available from: http://etd.library.vanderbilt.edu/available/etd-03232015-123555/ ;

19. Pellish, Jonathan Allen. Bulk Silicon-Germanium Heterojunction Bipolar Transistor Process Feature Implications for Single-Event Effects Analysis and Charge Collection Mechanisms.

Degree: PhD, Electrical Engineering, 2008, Vanderbilt University

 Silicon-germanium heterojunction bipolar transistor (SiGe HBT) BiCMOS technology is recognized by the space electronics community for its potential to transform high-speed microelectronic applications by monolithic… (more)

Subjects/Keywords: single event transient; single event effects; pulsed laser; microbeam; sige hbt; silicon germanium; Bipolar transistors  – Effect of radiation on  – Testing; Junction transistors  – Effect of radiation on  – Testing; Heavy ions; Space environment; Radiation hardening

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APA (6th Edition):

Pellish, J. A. (2008). Bulk Silicon-Germanium Heterojunction Bipolar Transistor Process Feature Implications for Single-Event Effects Analysis and Charge Collection Mechanisms. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-10202008-144701/ ;

Chicago Manual of Style (16th Edition):

Pellish, Jonathan Allen. “Bulk Silicon-Germanium Heterojunction Bipolar Transistor Process Feature Implications for Single-Event Effects Analysis and Charge Collection Mechanisms.” 2008. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-10202008-144701/ ;.

MLA Handbook (7th Edition):

Pellish, Jonathan Allen. “Bulk Silicon-Germanium Heterojunction Bipolar Transistor Process Feature Implications for Single-Event Effects Analysis and Charge Collection Mechanisms.” 2008. Web. 09 Apr 2020.

Vancouver:

Pellish JA. Bulk Silicon-Germanium Heterojunction Bipolar Transistor Process Feature Implications for Single-Event Effects Analysis and Charge Collection Mechanisms. [Internet] [Doctoral dissertation]. Vanderbilt University; 2008. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-10202008-144701/ ;.

Council of Science Editors:

Pellish JA. Bulk Silicon-Germanium Heterojunction Bipolar Transistor Process Feature Implications for Single-Event Effects Analysis and Charge Collection Mechanisms. [Doctoral Dissertation]. Vanderbilt University; 2008. Available from: http://etd.library.vanderbilt.edu/available/etd-10202008-144701/ ;

20. Howe, Christina L. The Radiation Response of Focal Plane Arrays.

Degree: PhD, Electrical Engineering, 2008, Vanderbilt University

 Using Monte Carlo based simulations, the proton-induced energy deposition in a silicon PIN focal plane array was analyzed, and the importance of considering the materials… (more)

Subjects/Keywords: direct ionization; MRED; Monte Carlo; single event transient; focal plane array; energy deposition; Geant4; nuclear reactions; Focal planes  – Testing; Optical detectors  – Testing; Radiation hardening; Protons; Energy dissipation  – Mathematical models

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APA (6th Edition):

Howe, C. L. (2008). The Radiation Response of Focal Plane Arrays. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12042008-130923/ ;

Chicago Manual of Style (16th Edition):

Howe, Christina L. “The Radiation Response of Focal Plane Arrays.” 2008. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-12042008-130923/ ;.

MLA Handbook (7th Edition):

Howe, Christina L. “The Radiation Response of Focal Plane Arrays.” 2008. Web. 09 Apr 2020.

Vancouver:

Howe CL. The Radiation Response of Focal Plane Arrays. [Internet] [Doctoral dissertation]. Vanderbilt University; 2008. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-12042008-130923/ ;.

Council of Science Editors:

Howe CL. The Radiation Response of Focal Plane Arrays. [Doctoral Dissertation]. Vanderbilt University; 2008. Available from: http://etd.library.vanderbilt.edu/available/etd-12042008-130923/ ;

21. El Mamouni, Farah. Single-event-transient effects in sub-70 nm bulk and SOI FinFETs.

Degree: PhD, Electrical Engineering, 2012, Vanderbilt University

 In this thesis, single event transient (SET) effects in sub-70 nm bulk and SOI FinFETs are investigated through topside and backside laser and heavy ion… (more)

Subjects/Keywords: single event effects.; electronic devices; Radiation effects

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APA (6th Edition):

El Mamouni, F. (2012). Single-event-transient effects in sub-70 nm bulk and SOI FinFETs. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07092012-155625/ ;

Chicago Manual of Style (16th Edition):

El Mamouni, Farah. “Single-event-transient effects in sub-70 nm bulk and SOI FinFETs.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-07092012-155625/ ;.

MLA Handbook (7th Edition):

El Mamouni, Farah. “Single-event-transient effects in sub-70 nm bulk and SOI FinFETs.” 2012. Web. 09 Apr 2020.

Vancouver:

El Mamouni F. Single-event-transient effects in sub-70 nm bulk and SOI FinFETs. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-07092012-155625/ ;.

Council of Science Editors:

El Mamouni F. Single-event-transient effects in sub-70 nm bulk and SOI FinFETs. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://etd.library.vanderbilt.edu/available/etd-07092012-155625/ ;

22. Hughart, David Russell. Variations in Radiation Response Due to Hydrogen: Mechanisms of Interface Trap Buildup and Annealing.

Degree: PhD, Electrical Engineering, 2012, Vanderbilt University

 Hydrogen produces variability in the radiation response of integrated circuits, whether incorporated in the oxide or present as a gas. The presence of molecular hydrogen… (more)

Subjects/Keywords: annealing; elevated temperature irradiation; low dose rate; hydrogen; interface traps; Radiation effects

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APA (6th Edition):

Hughart, D. R. (2012). Variations in Radiation Response Due to Hydrogen: Mechanisms of Interface Trap Buildup and Annealing. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12032012-190026/ ;

Chicago Manual of Style (16th Edition):

Hughart, David Russell. “Variations in Radiation Response Due to Hydrogen: Mechanisms of Interface Trap Buildup and Annealing.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-12032012-190026/ ;.

MLA Handbook (7th Edition):

Hughart, David Russell. “Variations in Radiation Response Due to Hydrogen: Mechanisms of Interface Trap Buildup and Annealing.” 2012. Web. 09 Apr 2020.

Vancouver:

Hughart DR. Variations in Radiation Response Due to Hydrogen: Mechanisms of Interface Trap Buildup and Annealing. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-12032012-190026/ ;.

Council of Science Editors:

Hughart DR. Variations in Radiation Response Due to Hydrogen: Mechanisms of Interface Trap Buildup and Annealing. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://etd.library.vanderbilt.edu/available/etd-12032012-190026/ ;

23. Hong, Tu. Low-dimensional materials for optoelectronic and bioelectronic applications.

Degree: PhD, Electrical Engineering, 2017, Vanderbilt University

 The field of nanotechnology has witnessed amazing development in the past decade. In particular, studies of low-dimensional materials, including carbon nanotubes (CNTs), graphene, and other… (more)

Subjects/Keywords: photodetector; bioelectronic; optoelectronic; carbon nanotube; graphene; 2D material; biosensor

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APA (6th Edition):

Hong, T. (2017). Low-dimensional materials for optoelectronic and bioelectronic applications. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-08012017-155039/ ;

Chicago Manual of Style (16th Edition):

Hong, Tu. “Low-dimensional materials for optoelectronic and bioelectronic applications.” 2017. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-08012017-155039/ ;.

MLA Handbook (7th Edition):

Hong, Tu. “Low-dimensional materials for optoelectronic and bioelectronic applications.” 2017. Web. 09 Apr 2020.

Vancouver:

Hong T. Low-dimensional materials for optoelectronic and bioelectronic applications. [Internet] [Doctoral dissertation]. Vanderbilt University; 2017. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-08012017-155039/ ;.

Council of Science Editors:

Hong T. Low-dimensional materials for optoelectronic and bioelectronic applications. [Doctoral Dissertation]. Vanderbilt University; 2017. Available from: http://etd.library.vanderbilt.edu/available/etd-08012017-155039/ ;

24. Chen, Jin. Radiation Response and Reliability of High Speed AlGaN/GaN HEMTs.

Degree: PhD, Electrical Engineering, 2016, Vanderbilt University

 In recent years, GaN-based high-electron-mobility-transistors (HEMT) have demonstrated excellent high power and high frequency performance compared with counterparts based on other materials. Although AlGaN/GaN HEMTs… (more)

Subjects/Keywords: reliability; radiation effects; GaN HEMTs; 1/f low frequency noise

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APA (6th Edition):

Chen, J. (2016). Radiation Response and Reliability of High Speed AlGaN/GaN HEMTs. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07262016-182142/ ;

Chicago Manual of Style (16th Edition):

Chen, Jin. “Radiation Response and Reliability of High Speed AlGaN/GaN HEMTs.” 2016. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-07262016-182142/ ;.

MLA Handbook (7th Edition):

Chen, Jin. “Radiation Response and Reliability of High Speed AlGaN/GaN HEMTs.” 2016. Web. 09 Apr 2020.

Vancouver:

Chen J. Radiation Response and Reliability of High Speed AlGaN/GaN HEMTs. [Internet] [Doctoral dissertation]. Vanderbilt University; 2016. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-07262016-182142/ ;.

Council of Science Editors:

Chen J. Radiation Response and Reliability of High Speed AlGaN/GaN HEMTs. [Doctoral Dissertation]. Vanderbilt University; 2016. Available from: http://etd.library.vanderbilt.edu/available/etd-07262016-182142/ ;

25. Ni, Kai. Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS.

Degree: PhD, Electrical Engineering, 2016, Vanderbilt University

 With CMOS scaling continuing to sub-10 nm node, Si is approaching its physical limits. To enable further scaling, alternative channel materials with superior transport properties… (more)

Subjects/Keywords: charge collection; TCAD; parasitic bipolar transistor; pulsed laser; heavy ion; III-V MOSFET; single event transient; total ionizing dose

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APA (6th Edition):

Ni, K. (2016). Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-09122016-145557/ ;

Chicago Manual of Style (16th Edition):

Ni, Kai. “Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS.” 2016. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-09122016-145557/ ;.

MLA Handbook (7th Edition):

Ni, Kai. “Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS.” 2016. Web. 09 Apr 2020.

Vancouver:

Ni K. Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS. [Internet] [Doctoral dissertation]. Vanderbilt University; 2016. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-09122016-145557/ ;.

Council of Science Editors:

Ni K. Single event transient and total ionizing dose effects on III-V MOSFETs for sub-10 nm node CMOS. [Doctoral Dissertation]. Vanderbilt University; 2016. Available from: http://etd.library.vanderbilt.edu/available/etd-09122016-145557/ ;

26. Black, Jeffrey Duncan. Pattern identification of multiple cell upsets in static random access memories to relate experimental test results to single event upset mechanisms.

Degree: PhD, Electrical Engineering, 2008, Vanderbilt University

 Multiple cell upsets (MCUs) were first observed in static random access memory (SRAM) in the 1980s. As microelectronics technology scaled, the number of cells affected… (more)

Subjects/Keywords: Semiconductors  – Effect of radiation on  – Computer-aided design; TCAD Modeling; Single Event Effects; Multible Cell Upset; SRAM; Charge Collection; Random access memory  – Testing

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APA (6th Edition):

Black, J. D. (2008). Pattern identification of multiple cell upsets in static random access memories to relate experimental test results to single event upset mechanisms. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07232008-142339/ ;

Chicago Manual of Style (16th Edition):

Black, Jeffrey Duncan. “Pattern identification of multiple cell upsets in static random access memories to relate experimental test results to single event upset mechanisms.” 2008. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-07232008-142339/ ;.

MLA Handbook (7th Edition):

Black, Jeffrey Duncan. “Pattern identification of multiple cell upsets in static random access memories to relate experimental test results to single event upset mechanisms.” 2008. Web. 09 Apr 2020.

Vancouver:

Black JD. Pattern identification of multiple cell upsets in static random access memories to relate experimental test results to single event upset mechanisms. [Internet] [Doctoral dissertation]. Vanderbilt University; 2008. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-07232008-142339/ ;.

Council of Science Editors:

Black JD. Pattern identification of multiple cell upsets in static random access memories to relate experimental test results to single event upset mechanisms. [Doctoral Dissertation]. Vanderbilt University; 2008. Available from: http://etd.library.vanderbilt.edu/available/etd-07232008-142339/ ;

27. Liang, Chundong. Radiation effects and low frequency noise in black phosphorus transistors.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 Black phosphorus (BP) is a promising two-dimensional (2D) semiconductor material for future CMOS technology. Its tunable band gap from 0.3 eV in bulk samples to… (more)

Subjects/Keywords: black phosphorus transistors; radiation effects; low frequency noise; reliability; single event effect; total ionizing dose effect

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APA (6th Edition):

Liang, C. (2018). Radiation effects and low frequency noise in black phosphorus transistors. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-02082018-135155/ ;

Chicago Manual of Style (16th Edition):

Liang, Chundong. “Radiation effects and low frequency noise in black phosphorus transistors.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-02082018-135155/ ;.

MLA Handbook (7th Edition):

Liang, Chundong. “Radiation effects and low frequency noise in black phosphorus transistors.” 2018. Web. 09 Apr 2020.

Vancouver:

Liang C. Radiation effects and low frequency noise in black phosphorus transistors. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-02082018-135155/ ;.

Council of Science Editors:

Liang C. Radiation effects and low frequency noise in black phosphorus transistors. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-02082018-135155/ ;

28. Zhang, Hangfang. Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies.

Degree: PhD, Electrical Engineering, 2018, Vanderbilt University

 Modern ICs need to be designed with proper designer-controllable factors to meet power, speed and single-event (SE) performance requirements in different applications. Commercial fabrication houses… (more)

Subjects/Keywords: Single Event; Threshold Voltage; FinFET; Design Parameter; Temperature; Angular Incidence; Flip-Flop; Well Structure

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APA (6th Edition):

Zhang, H. (2018). Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-04072018-123506/ ;

Chicago Manual of Style (16th Edition):

Zhang, Hangfang. “Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies.” 2018. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-04072018-123506/ ;.

MLA Handbook (7th Edition):

Zhang, Hangfang. “Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies.” 2018. Web. 09 Apr 2020.

Vancouver:

Zhang H. Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies. [Internet] [Doctoral dissertation]. Vanderbilt University; 2018. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-04072018-123506/ ;.

Council of Science Editors:

Zhang H. Impact of Designer-Controlled Parameters on Single-Event Responses for Flip-Flop Designs in Advanced Technologies. [Doctoral Dissertation]. Vanderbilt University; 2018. Available from: http://etd.library.vanderbilt.edu/available/etd-04072018-123506/ ;

29. Chatterjee, Indranil. Geometric Dependence of the Total Ionizing Dose Response of FinFETs.

Degree: PhD, Electrical Engineering, 2014, Vanderbilt University

 The total ionizing dose induced degradation in advanced deep-submicron CMOS technologies has been significantly reduced by scaling. Damage to isolating field oxides remains a significant… (more)

Subjects/Keywords: Total dose effects; Isolation oxides; Bulk FinFET; SOI FinFET; Parasitic transistor; Oxide traps; Charge trapping

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APA (6th Edition):

Chatterjee, I. (2014). Geometric Dependence of the Total Ionizing Dose Response of FinFETs. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-07312014-201221/ ;

Chicago Manual of Style (16th Edition):

Chatterjee, Indranil. “Geometric Dependence of the Total Ionizing Dose Response of FinFETs.” 2014. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-07312014-201221/ ;.

MLA Handbook (7th Edition):

Chatterjee, Indranil. “Geometric Dependence of the Total Ionizing Dose Response of FinFETs.” 2014. Web. 09 Apr 2020.

Vancouver:

Chatterjee I. Geometric Dependence of the Total Ionizing Dose Response of FinFETs. [Internet] [Doctoral dissertation]. Vanderbilt University; 2014. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-07312014-201221/ ;.

Council of Science Editors:

Chatterjee I. Geometric Dependence of the Total Ionizing Dose Response of FinFETs. [Doctoral Dissertation]. Vanderbilt University; 2014. Available from: http://etd.library.vanderbilt.edu/available/etd-07312014-201221/ ;

30. Rezzak, Nadia. Total ionizing dose effects in advanced CMOS technologies.

Degree: PhD, Electrical Engineering, 2012, Vanderbilt University

 Key aspects of the total-ionizing dose (TID) response of advanced complementary metalâoxideâsemiconductor (CMOS) technologies are examined. As technology scales down, stress can strongly affect radiation-induced… (more)

Subjects/Keywords: Fully depleted SOI; Partially depleted SOI; Variability; total ionizing dose (TID); sidewall doping; shallow trench isolation (STI); MOSFET off-state leakage current; mechanical stress; Active space distance

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Rezzak, N. (2012). Total ionizing dose effects in advanced CMOS technologies. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://etd.library.vanderbilt.edu/available/etd-12212012-123125/ ;

Chicago Manual of Style (16th Edition):

Rezzak, Nadia. “Total ionizing dose effects in advanced CMOS technologies.” 2012. Doctoral Dissertation, Vanderbilt University. Accessed April 09, 2020. http://etd.library.vanderbilt.edu/available/etd-12212012-123125/ ;.

MLA Handbook (7th Edition):

Rezzak, Nadia. “Total ionizing dose effects in advanced CMOS technologies.” 2012. Web. 09 Apr 2020.

Vancouver:

Rezzak N. Total ionizing dose effects in advanced CMOS technologies. [Internet] [Doctoral dissertation]. Vanderbilt University; 2012. [cited 2020 Apr 09]. Available from: http://etd.library.vanderbilt.edu/available/etd-12212012-123125/ ;.

Council of Science Editors:

Rezzak N. Total ionizing dose effects in advanced CMOS technologies. [Doctoral Dissertation]. Vanderbilt University; 2012. Available from: http://etd.library.vanderbilt.edu/available/etd-12212012-123125/ ;

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