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You searched for +publisher:"Vanderbilt University" +contributor:("Daniel Fleetwood"). Showing records 1 – 4 of 4 total matches.

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Vanderbilt University

1. Wang, Pan. Gate voltage dependence of low frequency noise of AlGaN/GaN HEMTs.

Degree: MS, Electrical Engineering, 2017, Vanderbilt University

 Low frequency noise measurements have been widely used to investigate the nature of defects in semiconductor devices. Characterization of low frequency noise performance at different… (more)

Subjects/Keywords: Number fluctuations; Low frequency noise; Gate voltage dependence; AlGaN/GaN HEMTs; Proton irradiation

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Wang, P. (2017). Gate voltage dependence of low frequency noise of AlGaN/GaN HEMTs. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/11251

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Pan. “Gate voltage dependence of low frequency noise of AlGaN/GaN HEMTs.” 2017. Thesis, Vanderbilt University. Accessed May 08, 2021. http://hdl.handle.net/1803/11251.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Pan. “Gate voltage dependence of low frequency noise of AlGaN/GaN HEMTs.” 2017. Web. 08 May 2021.

Vancouver:

Wang P. Gate voltage dependence of low frequency noise of AlGaN/GaN HEMTs. [Internet] [Thesis]. Vanderbilt University; 2017. [cited 2021 May 08]. Available from: http://hdl.handle.net/1803/11251.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang P. Gate voltage dependence of low frequency noise of AlGaN/GaN HEMTs. [Thesis]. Vanderbilt University; 2017. Available from: http://hdl.handle.net/1803/11251

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

2. Zhao, Simeng. Capacitance-frequency Estimates of Border-trap Densities in Multi-fin MOS Capacitors.

Degree: MS, Electrical Engineering, 2017, Vanderbilt University

 This thesis focuses on radiation effects of multi-fin MOS capacitors with high-K dielectrics built in Ge and InGaAs FinFET technologies. Capacitance-frequency (C-f) measurements are applied… (more)

Subjects/Keywords: capacitance-voltage; capacitance-frequency; FinFETs; interface traps; MOS; Border traps; radiation effects

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zhao, S. (2017). Capacitance-frequency Estimates of Border-trap Densities in Multi-fin MOS Capacitors. (Thesis). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/14063

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Zhao, Simeng. “Capacitance-frequency Estimates of Border-trap Densities in Multi-fin MOS Capacitors.” 2017. Thesis, Vanderbilt University. Accessed May 08, 2021. http://hdl.handle.net/1803/14063.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Zhao, Simeng. “Capacitance-frequency Estimates of Border-trap Densities in Multi-fin MOS Capacitors.” 2017. Web. 08 May 2021.

Vancouver:

Zhao S. Capacitance-frequency Estimates of Border-trap Densities in Multi-fin MOS Capacitors. [Internet] [Thesis]. Vanderbilt University; 2017. [cited 2021 May 08]. Available from: http://hdl.handle.net/1803/14063.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Zhao S. Capacitance-frequency Estimates of Border-trap Densities in Multi-fin MOS Capacitors. [Thesis]. Vanderbilt University; 2017. Available from: http://hdl.handle.net/1803/14063

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


Vanderbilt University

3. Gosnell, Jonathan David. A Phosphor-based Light-emitting Diode Using White-light Cadmium Selenide Nanocrystals.

Degree: PhD, Interdisciplinary Materials Science, 2010, Vanderbilt University

 White light-emitting diodes (LEDs) have attracted great interest recently due to their capability for higher efficiency and longer lifetimes compared to other current lighting technologies.… (more)

Subjects/Keywords: quantum dot; LED; CdSe; phosphor; solid state lighting; optics; thin film; nanoscience

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Gosnell, J. D. (2010). A Phosphor-based Light-emitting Diode Using White-light Cadmium Selenide Nanocrystals. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/11848

Chicago Manual of Style (16th Edition):

Gosnell, Jonathan David. “A Phosphor-based Light-emitting Diode Using White-light Cadmium Selenide Nanocrystals.” 2010. Doctoral Dissertation, Vanderbilt University. Accessed May 08, 2021. http://hdl.handle.net/1803/11848.

MLA Handbook (7th Edition):

Gosnell, Jonathan David. “A Phosphor-based Light-emitting Diode Using White-light Cadmium Selenide Nanocrystals.” 2010. Web. 08 May 2021.

Vancouver:

Gosnell JD. A Phosphor-based Light-emitting Diode Using White-light Cadmium Selenide Nanocrystals. [Internet] [Doctoral dissertation]. Vanderbilt University; 2010. [cited 2021 May 08]. Available from: http://hdl.handle.net/1803/11848.

Council of Science Editors:

Gosnell JD. A Phosphor-based Light-emitting Diode Using White-light Cadmium Selenide Nanocrystals. [Doctoral Dissertation]. Vanderbilt University; 2010. Available from: http://hdl.handle.net/1803/11848


Vanderbilt University

4. Zhu, Xiaowei. Single event effects in commercial microprocessors using dynamic circuitry.

Degree: PhD, Electrical Engineering, 2002, Vanderbilt University

 In this work the impact of technology trends on alpha particle induced soft error rates in state-of-the-art commercial microprocessors has been investigated. At the device… (more)

Subjects/Keywords: soft error; microprocessor; dynamic circuit; single event effects

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Zhu, X. (2002). Single event effects in commercial microprocessors using dynamic circuitry. (Doctoral Dissertation). Vanderbilt University. Retrieved from http://hdl.handle.net/1803/10876

Chicago Manual of Style (16th Edition):

Zhu, Xiaowei. “Single event effects in commercial microprocessors using dynamic circuitry.” 2002. Doctoral Dissertation, Vanderbilt University. Accessed May 08, 2021. http://hdl.handle.net/1803/10876.

MLA Handbook (7th Edition):

Zhu, Xiaowei. “Single event effects in commercial microprocessors using dynamic circuitry.” 2002. Web. 08 May 2021.

Vancouver:

Zhu X. Single event effects in commercial microprocessors using dynamic circuitry. [Internet] [Doctoral dissertation]. Vanderbilt University; 2002. [cited 2021 May 08]. Available from: http://hdl.handle.net/1803/10876.

Council of Science Editors:

Zhu X. Single event effects in commercial microprocessors using dynamic circuitry. [Doctoral Dissertation]. Vanderbilt University; 2002. Available from: http://hdl.handle.net/1803/10876

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