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You searched for +publisher:"University of Texas – Austin" +contributor:("Mack, Chris"). One record found.

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University of Texas – Austin

1. -2754-875X. Patternable materials for next-generation lithography.

Degree: PhD, Chemical Engineering, 2019, University of Texas – Austin

One of the salient truths facing the microelectronics industry today is that photolithography tools are unable to meet the resolution requirements for manufacturing next-generation devices. In the past, circuit feature sizes have been minimized by reducing the exposure wavelength used for patterning. However, this strategy failed with the worldwide dereliction of 157 nm lithography in 2003. Extreme ultraviolet (EUV) lithography still faces many technical challenges and is not ready for high volume manufacturing. How will the microelectronics industry continue to innovate without regular advances in photopatterning technology? Regardless of which paradigm is adopted, new materials will probably be required to meet the specific challenges of scaling down feature sizes and satisfying the economic ultimatum of Moore’s Law. In the search for higher resolution patterning tools, device manufacturers have identified block copolymer (BCP) lithography as a possible technique for next-generation nanofabrication. BCP self-assembly offers access to sub-5 nm features in thin films, well beyond the resolution limits of photolithography. However, BCP materials must be carefully designed, synthesized, and processed to create lithographically interesting features with good etch resistance for pattern transfer. In this dissertation, we describe a pattern transfer process for 5 nm BCP lamellae and a directed self-assembly (DSA) process for aligning 5 nm structures in thin films. To achieve defect-free alignment, the interfacial interactions between the BCP and pre-patterned substrate must be precisely controlled. We also discuss a new process for selectively modifying oxidized chromium films using polymer brushes, which could further improve the aforesaid DSA process. To facilitate better pattern transfer of BCP structures, several new BCPs with “self-developing” blocks were synthesized and tested. These materials depolymerize and evaporate in strongly acidic environments, leading to developed BCP features without the need for etching or solvent. “Self-developing” polymers may also be useful materials for traditional photolithography. Chemically amplified resists used in manufacturing today are fundamentally limited by a trade-off between sensitivity and pattern quality. To overcome this problem, we present a new type of photoresist that relies on depolymerization, rather than catalysis, to achieve amplification without producing significant roughness or bias in the final pattern Advisors/Committee Members: Willson, C. G. (C. Grant), 1939- (advisor), Ellison, Christopher J (committee member), Bonnecaze, Roger T (committee member), Baiz, Carlos (committee member), Mack, Chris (committee member).

Subjects/Keywords: Photolithography; Block copolymer; Nanoimprint lithography; Electron beam lithography; Nanofabrication; Depolymerization

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APA (6th Edition):

-2754-875X. (2019). Patternable materials for next-generation lithography. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/2236

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Chicago Manual of Style (16th Edition):

-2754-875X. “Patternable materials for next-generation lithography.” 2019. Doctoral Dissertation, University of Texas – Austin. Accessed October 17, 2019. http://dx.doi.org/10.26153/tsw/2236.

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MLA Handbook (7th Edition):

-2754-875X. “Patternable materials for next-generation lithography.” 2019. Web. 17 Oct 2019.

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Vancouver:

-2754-875X. Patternable materials for next-generation lithography. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2019. [cited 2019 Oct 17]. Available from: http://dx.doi.org/10.26153/tsw/2236.

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Council of Science Editors:

-2754-875X. Patternable materials for next-generation lithography. [Doctoral Dissertation]. University of Texas – Austin; 2019. Available from: http://dx.doi.org/10.26153/tsw/2236

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

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