Advanced search options

Advanced Search Options 🞨

Browse by author name (“Author name starts with…”).

Find ETDs with:

in
/  
in
/  
in
/  
in

Written in Published in Earliest date Latest date

Sorted by

Results per page:

Sorted by: relevance · author · university · dateNew search

You searched for +publisher:"University of Texas – Austin" +contributor:("Banerjee, Sanjay"). Showing records 1 – 30 of 99 total matches.

[1] [2] [3] [4]

Search Limiters

Last 2 Years | English Only

▼ Search Limiters


University of Texas – Austin

1. Dey, Rik. Perpendicular And Parallel Field Magnetoresistance In Molecular Beam Epitaxy Grown Bi2Te3.

Degree: MSin Engineering, Electrical and Computer Engineering, 2014, University of Texas – Austin

 The topological insulator Bi2Te3 has been grown on Si(111)-(7 × 7) surface by molecular beam epitaxy. Reflection high energy electron diffraction, in situ scanning tunnelling… (more)

Subjects/Keywords: Topological insulator; Molecular beam epitaxy; Weak antilocalization; Electron electron interaction; Zeeman effect

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Dey, R. (2014). Perpendicular And Parallel Field Magnetoresistance In Molecular Beam Epitaxy Grown Bi2Te3. (Masters Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/26012

Chicago Manual of Style (16th Edition):

Dey, Rik. “Perpendicular And Parallel Field Magnetoresistance In Molecular Beam Epitaxy Grown Bi2Te3.” 2014. Masters Thesis, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/26012.

MLA Handbook (7th Edition):

Dey, Rik. “Perpendicular And Parallel Field Magnetoresistance In Molecular Beam Epitaxy Grown Bi2Te3.” 2014. Web. 25 Jan 2021.

Vancouver:

Dey R. Perpendicular And Parallel Field Magnetoresistance In Molecular Beam Epitaxy Grown Bi2Te3. [Internet] [Masters thesis]. University of Texas – Austin; 2014. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/26012.

Council of Science Editors:

Dey R. Perpendicular And Parallel Field Magnetoresistance In Molecular Beam Epitaxy Grown Bi2Te3. [Masters Thesis]. University of Texas – Austin; 2014. Available from: http://hdl.handle.net/2152/26012


University of Texas – Austin

2. Saha, Sayan. Cost effective high efficiency solar cells.

Degree: PhD, Electrical and Computer Engineering, 2014, University of Texas – Austin

 To make solar energy mainstream, lower-cost and more efficient power generation is key. A lot of effort in the silicon photovoltaic industry has gone into… (more)

Subjects/Keywords: Mono-crystalline silicon; Solar cells

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Saha, S. (2014). Cost effective high efficiency solar cells. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/26934

Chicago Manual of Style (16th Edition):

Saha, Sayan. “Cost effective high efficiency solar cells.” 2014. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/26934.

MLA Handbook (7th Edition):

Saha, Sayan. “Cost effective high efficiency solar cells.” 2014. Web. 25 Jan 2021.

Vancouver:

Saha S. Cost effective high efficiency solar cells. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2014. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/26934.

Council of Science Editors:

Saha S. Cost effective high efficiency solar cells. [Doctoral Dissertation]. University of Texas – Austin; 2014. Available from: http://hdl.handle.net/2152/26934


University of Texas – Austin

3. -6035-5581. Growth optimization of WSe₂ and its sulfurization to WS₂.

Degree: MSin Engineering, Electrical and Computer Engineering, 2019, University of Texas – Austin

 Tungsten diselenide has gained much interest within recent years after it was reported to have both p-type and ambipolar transport properties. And because most other… (more)

Subjects/Keywords: CVD; Tungsten diselenide; Tungsten disulfide; TMD; Crystal growth

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

-6035-5581. (2019). Growth optimization of WSe₂ and its sulfurization to WS₂. (Masters Thesis). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/8447

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-6035-5581. “Growth optimization of WSe₂ and its sulfurization to WS₂.” 2019. Masters Thesis, University of Texas – Austin. Accessed January 25, 2021. http://dx.doi.org/10.26153/tsw/8447.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-6035-5581. “Growth optimization of WSe₂ and its sulfurization to WS₂.” 2019. Web. 25 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-6035-5581. Growth optimization of WSe₂ and its sulfurization to WS₂. [Internet] [Masters thesis]. University of Texas – Austin; 2019. [cited 2021 Jan 25]. Available from: http://dx.doi.org/10.26153/tsw/8447.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-6035-5581. Growth optimization of WSe₂ and its sulfurization to WS₂. [Masters Thesis]. University of Texas – Austin; 2019. Available from: http://dx.doi.org/10.26153/tsw/8447

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Texas – Austin

4. Bhatti, Aqyan Ahmed. Advanced semi-classical Monte Carlo modeling of Si, Ge, InGaAs, and MoS₂ n-channel FETs for novel CMOS.

Degree: PhD, Materials Science and Engineering, 2020, University of Texas – Austin

 Scaling-down of silicon (Si) based complementary-metal-oxide-semiconductor (CMOS) technologies are approaching material limits. For high-performance applications, high thermal velocity channel materials, such as indium-gallium-arsenide (InGaAs) and… (more)

Subjects/Keywords: Contacts; FinFET; Germanium; Indium-gallium-arsenide; Molybdenum disulfide; Quantum-confinement; Quasi-ballistic; Scaling; Semi-classical Monte Carlo; Semiconductor device modeling; Silicon; Strain engineering

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Bhatti, A. A. (2020). Advanced semi-classical Monte Carlo modeling of Si, Ge, InGaAs, and MoS₂ n-channel FETs for novel CMOS. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/8223

Chicago Manual of Style (16th Edition):

Bhatti, Aqyan Ahmed. “Advanced semi-classical Monte Carlo modeling of Si, Ge, InGaAs, and MoS₂ n-channel FETs for novel CMOS.” 2020. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://dx.doi.org/10.26153/tsw/8223.

MLA Handbook (7th Edition):

Bhatti, Aqyan Ahmed. “Advanced semi-classical Monte Carlo modeling of Si, Ge, InGaAs, and MoS₂ n-channel FETs for novel CMOS.” 2020. Web. 25 Jan 2021.

Vancouver:

Bhatti AA. Advanced semi-classical Monte Carlo modeling of Si, Ge, InGaAs, and MoS₂ n-channel FETs for novel CMOS. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2020. [cited 2021 Jan 25]. Available from: http://dx.doi.org/10.26153/tsw/8223.

Council of Science Editors:

Bhatti AA. Advanced semi-classical Monte Carlo modeling of Si, Ge, InGaAs, and MoS₂ n-channel FETs for novel CMOS. [Doctoral Dissertation]. University of Texas – Austin; 2020. Available from: http://dx.doi.org/10.26153/tsw/8223


University of Texas – Austin

5. Kweon, Kyoung Eun, 1981-. First principles study of point-like defects and impurities in silicon, carbon, and oxide materials.

Degree: PhD, Electrical and Computer Engineering, 2012, University of Texas – Austin

 Since materials properties are determined by the interactions between the constituent atoms, an accurate description of the inter-atomic interactions is crucial to characterize and control… (more)

Subjects/Keywords: First principles density functional calculations; Defects and impurities; Silicon; sp2-bonded carbon; Bismuth vanadate

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Kweon, Kyoung Eun, 1. (2012). First principles study of point-like defects and impurities in silicon, carbon, and oxide materials. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/23460

Chicago Manual of Style (16th Edition):

Kweon, Kyoung Eun, 1981-. “First principles study of point-like defects and impurities in silicon, carbon, and oxide materials.” 2012. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/23460.

MLA Handbook (7th Edition):

Kweon, Kyoung Eun, 1981-. “First principles study of point-like defects and impurities in silicon, carbon, and oxide materials.” 2012. Web. 25 Jan 2021.

Vancouver:

Kweon, Kyoung Eun 1. First principles study of point-like defects and impurities in silicon, carbon, and oxide materials. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2012. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/23460.

Council of Science Editors:

Kweon, Kyoung Eun 1. First principles study of point-like defects and impurities in silicon, carbon, and oxide materials. [Doctoral Dissertation]. University of Texas – Austin; 2012. Available from: http://hdl.handle.net/2152/23460


University of Texas – Austin

6. -8287-8903. Multistate spin-transfer-torque random access memory.

Degree: MSin Engineering, Electrical and Computer engineering, 2016, University of Texas – Austin

 Spin-transfer-torque random access memory (STT-RAM) is an emerging non-volatile memory technology that stores information as the relative alignment of two ferromagnets in a magnetic tunnel… (more)

Subjects/Keywords: Multistate spin transfer torque random access memory; Multi-bit; STTRAM; MRAM

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

-8287-8903. (2016). Multistate spin-transfer-torque random access memory. (Masters Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/41498

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-8287-8903. “Multistate spin-transfer-torque random access memory.” 2016. Masters Thesis, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/41498.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-8287-8903. “Multistate spin-transfer-torque random access memory.” 2016. Web. 25 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-8287-8903. Multistate spin-transfer-torque random access memory. [Internet] [Masters thesis]. University of Texas – Austin; 2016. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/41498.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-8287-8903. Multistate spin-transfer-torque random access memory. [Masters Thesis]. University of Texas – Austin; 2016. Available from: http://hdl.handle.net/2152/41498

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Texas – Austin

7. Chang, Jiwon, active 2013. Ab-initio electronic structure and quantum transport calculations on quasi-two-dimensional materials for beyond Si-CMOS devices.

Degree: PhD, Electrical and Computer Engineering, 2013, University of Texas – Austin

 Atomically two-dimensional (2-D) graphene, as well as the hexagonal boron nitride dielectric have been and are continuing to be widely investigated for the next generation… (more)

Subjects/Keywords: Density functional theory; Quantum transport; NEGF; 2-D material; Topological insulator; Transition metal dichalcogenide

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Chang, Jiwon, a. 2. (2013). Ab-initio electronic structure and quantum transport calculations on quasi-two-dimensional materials for beyond Si-CMOS devices. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/21742

Chicago Manual of Style (16th Edition):

Chang, Jiwon, active 2013. “Ab-initio electronic structure and quantum transport calculations on quasi-two-dimensional materials for beyond Si-CMOS devices.” 2013. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/21742.

MLA Handbook (7th Edition):

Chang, Jiwon, active 2013. “Ab-initio electronic structure and quantum transport calculations on quasi-two-dimensional materials for beyond Si-CMOS devices.” 2013. Web. 25 Jan 2021.

Vancouver:

Chang, Jiwon a2. Ab-initio electronic structure and quantum transport calculations on quasi-two-dimensional materials for beyond Si-CMOS devices. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2013. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/21742.

Council of Science Editors:

Chang, Jiwon a2. Ab-initio electronic structure and quantum transport calculations on quasi-two-dimensional materials for beyond Si-CMOS devices. [Doctoral Dissertation]. University of Texas – Austin; 2013. Available from: http://hdl.handle.net/2152/21742


University of Texas – Austin

8. Dillen, David Carl. Confined electron systems in Si-Ge nanowire heterostructures.

Degree: MSin Engineering, Electrical and Computer Engineering, 2011, University of Texas – Austin

 Semiconductor nanowire field-effect transistors (NWFET) have been recognized as a possible alternative to silicon-based CMOS technology as traditional scaling limits are neared. The core-shell nanowire… (more)

Subjects/Keywords: Core-shell; Nanowire; Strained heterostructure; Modulation-doping

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Dillen, D. C. (2011). Confined electron systems in Si-Ge nanowire heterostructures. (Masters Thesis). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/ETD-UT-2011-08-4360

Chicago Manual of Style (16th Edition):

Dillen, David Carl. “Confined electron systems in Si-Ge nanowire heterostructures.” 2011. Masters Thesis, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/ETD-UT-2011-08-4360.

MLA Handbook (7th Edition):

Dillen, David Carl. “Confined electron systems in Si-Ge nanowire heterostructures.” 2011. Web. 25 Jan 2021.

Vancouver:

Dillen DC. Confined electron systems in Si-Ge nanowire heterostructures. [Internet] [Masters thesis]. University of Texas – Austin; 2011. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/ETD-UT-2011-08-4360.

Council of Science Editors:

Dillen DC. Confined electron systems in Si-Ge nanowire heterostructures. [Masters Thesis]. University of Texas – Austin; 2011. Available from: http://hdl.handle.net/2152/ETD-UT-2011-08-4360


University of Texas – Austin

9. -0763-0905. Quantum simulation of device physics for the pseudospintronic devices.

Degree: PhD, Electrical and Computer Engineering, 2015, University of Texas – Austin

 It has been predicted that room-temperature electron-hole exciton condensation may be possible in dielectrically separated and exchange-correlation-coupled two-dimensional material bilayer systems, which is the fundamental… (more)

Subjects/Keywords: 2D materials; Interlayer electron-hole exciton condensation; Low-power switching; Novel beyond-CMOS devices; Full quantum simulation

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

-0763-0905. (2015). Quantum simulation of device physics for the pseudospintronic devices. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/46539

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-0763-0905. “Quantum simulation of device physics for the pseudospintronic devices.” 2015. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/46539.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-0763-0905. “Quantum simulation of device physics for the pseudospintronic devices.” 2015. Web. 25 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-0763-0905. Quantum simulation of device physics for the pseudospintronic devices. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2015. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/46539.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-0763-0905. Quantum simulation of device physics for the pseudospintronic devices. [Doctoral Dissertation]. University of Texas – Austin; 2015. Available from: http://hdl.handle.net/2152/46539

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Texas – Austin

10. Dillen, David Carl. Strain and modulation doping in epitaxial Si/Ge core-shell nanowire heterostructures.

Degree: PhD, Electrical and Computer Engineering, 2015, University of Texas – Austin

 For over five decades, silicon based electronics relied on scaling of individual field-effect transistors (FETs) for improvements in integrated circuit performance. Recently, however, further enhancement… (more)

Subjects/Keywords: Semiconductors; Nanowire; Core-shell; Germanium; Silicon; Strain; Raman spectroscopy; Modulation doping

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Dillen, D. C. (2015). Strain and modulation doping in epitaxial Si/Ge core-shell nanowire heterostructures. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/32857

Chicago Manual of Style (16th Edition):

Dillen, David Carl. “Strain and modulation doping in epitaxial Si/Ge core-shell nanowire heterostructures.” 2015. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/32857.

MLA Handbook (7th Edition):

Dillen, David Carl. “Strain and modulation doping in epitaxial Si/Ge core-shell nanowire heterostructures.” 2015. Web. 25 Jan 2021.

Vancouver:

Dillen DC. Strain and modulation doping in epitaxial Si/Ge core-shell nanowire heterostructures. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2015. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/32857.

Council of Science Editors:

Dillen DC. Strain and modulation doping in epitaxial Si/Ge core-shell nanowire heterostructures. [Doctoral Dissertation]. University of Texas – Austin; 2015. Available from: http://hdl.handle.net/2152/32857


University of Texas – Austin

11. Dey, Rik. Theoretical and experimental studies on topological insulators and topological insulator based spintronic devices.

Degree: PhD, Electrical and Computer Engineering, 2019, University of Texas – Austin

 Three dimensional (3D) topological insulators (TIs) are unique materials with insulating bulk and two dimensional (2D) metallic surface states having spin-momentum locked Dirac-band dispersion. The… (more)

Subjects/Keywords: Topological insulator; Spintronic

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Dey, R. (2019). Theoretical and experimental studies on topological insulators and topological insulator based spintronic devices. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/5792

Chicago Manual of Style (16th Edition):

Dey, Rik. “Theoretical and experimental studies on topological insulators and topological insulator based spintronic devices.” 2019. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://dx.doi.org/10.26153/tsw/5792.

MLA Handbook (7th Edition):

Dey, Rik. “Theoretical and experimental studies on topological insulators and topological insulator based spintronic devices.” 2019. Web. 25 Jan 2021.

Vancouver:

Dey R. Theoretical and experimental studies on topological insulators and topological insulator based spintronic devices. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2019. [cited 2021 Jan 25]. Available from: http://dx.doi.org/10.26153/tsw/5792.

Council of Science Editors:

Dey R. Theoretical and experimental studies on topological insulators and topological insulator based spintronic devices. [Doctoral Dissertation]. University of Texas – Austin; 2019. Available from: http://dx.doi.org/10.26153/tsw/5792


University of Texas – Austin

12. Valsaraj, Amithraj. Atomistic simulations of 2D materials and van der Waal’s heterostructures for beyond-Si-CMOS devices.

Degree: PhD, Electrical and Computer Engineering, 2019, University of Texas – Austin

 The unique electrical and optical properties of two-dimensional (2D) materials has spurred intense research interest towards development of nanoelectronic devices utilizing these novel materials. The… (more)

Subjects/Keywords: 2D materials; Van der Waal's heterostructures; DFT; ITFET; High-k doping

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Valsaraj, A. (2019). Atomistic simulations of 2D materials and van der Waal’s heterostructures for beyond-Si-CMOS devices. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/3132

Chicago Manual of Style (16th Edition):

Valsaraj, Amithraj. “Atomistic simulations of 2D materials and van der Waal’s heterostructures for beyond-Si-CMOS devices.” 2019. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://dx.doi.org/10.26153/tsw/3132.

MLA Handbook (7th Edition):

Valsaraj, Amithraj. “Atomistic simulations of 2D materials and van der Waal’s heterostructures for beyond-Si-CMOS devices.” 2019. Web. 25 Jan 2021.

Vancouver:

Valsaraj A. Atomistic simulations of 2D materials and van der Waal’s heterostructures for beyond-Si-CMOS devices. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2019. [cited 2021 Jan 25]. Available from: http://dx.doi.org/10.26153/tsw/3132.

Council of Science Editors:

Valsaraj A. Atomistic simulations of 2D materials and van der Waal’s heterostructures for beyond-Si-CMOS devices. [Doctoral Dissertation]. University of Texas – Austin; 2019. Available from: http://dx.doi.org/10.26153/tsw/3132


University of Texas – Austin

13. -4443-2756. Shape-engineered ferromagnets and micromagnetic simulation techniques for spin-transfer-torque random access memory.

Degree: PhD, Electrical and Computer Engineering, 2018, University of Texas – Austin

 Spin-transfer-torque random access memory (STTRAM) has received great attention as a prospective universal memory due to high speed read and write capabilities, scalability to smaller… (more)

Subjects/Keywords: STTRAM; Micromagnetic simulation; Rare-event-enhancement; Stochastic write process; Write errors; Incoherent switching

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

-4443-2756. (2018). Shape-engineered ferromagnets and micromagnetic simulation techniques for spin-transfer-torque random access memory. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/68119

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-4443-2756. “Shape-engineered ferromagnets and micromagnetic simulation techniques for spin-transfer-torque random access memory.” 2018. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/68119.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-4443-2756. “Shape-engineered ferromagnets and micromagnetic simulation techniques for spin-transfer-torque random access memory.” 2018. Web. 25 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-4443-2756. Shape-engineered ferromagnets and micromagnetic simulation techniques for spin-transfer-torque random access memory. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2018. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/68119.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-4443-2756. Shape-engineered ferromagnets and micromagnetic simulation techniques for spin-transfer-torque random access memory. [Doctoral Dissertation]. University of Texas – Austin; 2018. Available from: http://hdl.handle.net/2152/68119

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Texas – Austin

14. -0698-5627. Tip-enhanced Raman spectroscopy of strained semiconductor nanostructures.

Degree: PhD, Electrical and Computer Engineering, 2018, University of Texas – Austin

 Raman spectroscopy can serve as a powerful tool to probe the vibrational modes of solid state materials. By taking advantage of the enhanced electric fields… (more)

Subjects/Keywords: Raman spectroscopy; Scanning probe microscopy; TERS; Nanowire; 2D materials; Transition metal dichalcogenide; Strain

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

-0698-5627. (2018). Tip-enhanced Raman spectroscopy of strained semiconductor nanostructures. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/65733

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-0698-5627. “Tip-enhanced Raman spectroscopy of strained semiconductor nanostructures.” 2018. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/65733.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-0698-5627. “Tip-enhanced Raman spectroscopy of strained semiconductor nanostructures.” 2018. Web. 25 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-0698-5627. Tip-enhanced Raman spectroscopy of strained semiconductor nanostructures. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2018. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/65733.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-0698-5627. Tip-enhanced Raman spectroscopy of strained semiconductor nanostructures. [Doctoral Dissertation]. University of Texas – Austin; 2018. Available from: http://hdl.handle.net/2152/65733

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Texas – Austin

15. Seinige, Heidi. Current-driven non-linear magnetodynamics in magnetic nano-devices.

Degree: PhD, Physics, 2016, University of Texas – Austin

 Spintronis is an emerging electronic technology that is built on interconnections between the electron’s electric charge and its quantum-mechanical spin. The interconnections allow altering the… (more)

Subjects/Keywords: Spintronics; Antiferromagnetic spintronics

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Seinige, H. (2016). Current-driven non-linear magnetodynamics in magnetic nano-devices. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/39643

Chicago Manual of Style (16th Edition):

Seinige, Heidi. “Current-driven non-linear magnetodynamics in magnetic nano-devices.” 2016. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/39643.

MLA Handbook (7th Edition):

Seinige, Heidi. “Current-driven non-linear magnetodynamics in magnetic nano-devices.” 2016. Web. 25 Jan 2021.

Vancouver:

Seinige H. Current-driven non-linear magnetodynamics in magnetic nano-devices. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2016. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/39643.

Council of Science Editors:

Seinige H. Current-driven non-linear magnetodynamics in magnetic nano-devices. [Doctoral Dissertation]. University of Texas – Austin; 2016. Available from: http://hdl.handle.net/2152/39643


University of Texas – Austin

16. Ahn, Jaehyun. Optoelectronic devices for power conservation and generation.

Degree: PhD, Electrical and Computer Engineering, 2019, University of Texas – Austin

 Energy conservation and generation have become increasingly important in society. Here, we pursue novel transistor technologies based on three-dimensional (3D) FinFETs and two-dimensional (2D) materials… (more)

Subjects/Keywords: Post-silicon; Energy generation

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Ahn, J. (2019). Optoelectronic devices for power conservation and generation. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/1280

Chicago Manual of Style (16th Edition):

Ahn, Jaehyun. “Optoelectronic devices for power conservation and generation.” 2019. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://dx.doi.org/10.26153/tsw/1280.

MLA Handbook (7th Edition):

Ahn, Jaehyun. “Optoelectronic devices for power conservation and generation.” 2019. Web. 25 Jan 2021.

Vancouver:

Ahn J. Optoelectronic devices for power conservation and generation. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2019. [cited 2021 Jan 25]. Available from: http://dx.doi.org/10.26153/tsw/1280.

Council of Science Editors:

Ahn J. Optoelectronic devices for power conservation and generation. [Doctoral Dissertation]. University of Texas – Austin; 2019. Available from: http://dx.doi.org/10.26153/tsw/1280

17. -5552-4766. van der Waals epitaxy and electronic transport in topological insulators.

Degree: PhD, Electrical and Computer Engineering, 2018, University of Texas – Austin

 Topological insulators (TI) have been demonstrated as a unique electronic phase of matter, possessing topological surface states (TSS) with promising applications in spin-based logic and… (more)

Subjects/Keywords: Topological insulators; Device transport; Magnetotransport; Surface states; van der Waals epitaxy; Selective area growth; Custom feature growth; 2D materials; Layered chalcogenides; Bismuth telluride sulfide

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

-5552-4766. (2018). van der Waals epitaxy and electronic transport in topological insulators. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/63071

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-5552-4766. “van der Waals epitaxy and electronic transport in topological insulators.” 2018. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/63071.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-5552-4766. “van der Waals epitaxy and electronic transport in topological insulators.” 2018. Web. 25 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-5552-4766. van der Waals epitaxy and electronic transport in topological insulators. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2018. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/63071.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-5552-4766. van der Waals epitaxy and electronic transport in topological insulators. [Doctoral Dissertation]. University of Texas – Austin; 2018. Available from: http://hdl.handle.net/2152/63071

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Texas – Austin

18. Kim, Kyounghwan. Electronic properties and device applications of rotationally controlled van der Waals heterostructures.

Degree: PhD, Electrical and computer engineering, 2018, University of Texas – Austin

 Van der Waals heterostructure is a highly versatile platform to unveil two-dimensional (2D) electron physics and to explore new device functionalities. In this dissertation, we… (more)

Subjects/Keywords: Van der Waals heterostructures; Moire pattern; Resonant tunneling

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Kim, K. (2018). Electronic properties and device applications of rotationally controlled van der Waals heterostructures. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/1345

Chicago Manual of Style (16th Edition):

Kim, Kyounghwan. “Electronic properties and device applications of rotationally controlled van der Waals heterostructures.” 2018. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://dx.doi.org/10.26153/tsw/1345.

MLA Handbook (7th Edition):

Kim, Kyounghwan. “Electronic properties and device applications of rotationally controlled van der Waals heterostructures.” 2018. Web. 25 Jan 2021.

Vancouver:

Kim K. Electronic properties and device applications of rotationally controlled van der Waals heterostructures. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2018. [cited 2021 Jan 25]. Available from: http://dx.doi.org/10.26153/tsw/1345.

Council of Science Editors:

Kim K. Electronic properties and device applications of rotationally controlled van der Waals heterostructures. [Doctoral Dissertation]. University of Texas – Austin; 2018. Available from: http://dx.doi.org/10.26153/tsw/1345


University of Texas – Austin

19. Hsieh, Cheng Chih. Cerium oxide based resistive random access memory devices.

Degree: PhD, Electrical and Computer Engineering, 2017, University of Texas – Austin

 Resistive Random Access Memory (RRAM) is an emerging technology of non-volatile memory (NVM). Although the observation of metal oxide that can undergo an abrupt insulator-metal… (more)

Subjects/Keywords: Non-volatile memory; Neuromorphic computing; Deep learning; Machine learning; Memory

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Hsieh, C. C. (2017). Cerium oxide based resistive random access memory devices. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/63012

Chicago Manual of Style (16th Edition):

Hsieh, Cheng Chih. “Cerium oxide based resistive random access memory devices.” 2017. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/63012.

MLA Handbook (7th Edition):

Hsieh, Cheng Chih. “Cerium oxide based resistive random access memory devices.” 2017. Web. 25 Jan 2021.

Vancouver:

Hsieh CC. Cerium oxide based resistive random access memory devices. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2017. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/63012.

Council of Science Editors:

Hsieh CC. Cerium oxide based resistive random access memory devices. [Doctoral Dissertation]. University of Texas – Austin; 2017. Available from: http://hdl.handle.net/2152/63012


University of Texas – Austin

20. Larentis, Stefano. Electronic properties and electron-electron interaction effects in transition metal dichalcogenides.

Degree: PhD, Electrical and Computer Engineering, 2018, University of Texas – Austin

 Transition metal dichalcogenides (TMDs) are a new class of two-dimensional layered materials characterized by a MX₂ chemical formula, where M (X) stands for a transition… (more)

Subjects/Keywords: TMD; MoS2; MoSe2; MoTe2; Mobility; Temperature dependence; Photoluminescence; Few-layer; Monolayer; Bilayer; hBN: Graphene; Chacogenides; Heterostructures; Ngative compressibility; Band offset; Effective mass; G-factor; Interaction effects; Electronic properties; Zeeman energy; Magnetotransport; Landau level; Bandstructure; Spin splitting; Transition metal dichalcogenides; Transistor; Reconfigurable

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Larentis, S. (2018). Electronic properties and electron-electron interaction effects in transition metal dichalcogenides. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/68682

Chicago Manual of Style (16th Edition):

Larentis, Stefano. “Electronic properties and electron-electron interaction effects in transition metal dichalcogenides.” 2018. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/68682.

MLA Handbook (7th Edition):

Larentis, Stefano. “Electronic properties and electron-electron interaction effects in transition metal dichalcogenides.” 2018. Web. 25 Jan 2021.

Vancouver:

Larentis S. Electronic properties and electron-electron interaction effects in transition metal dichalcogenides. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2018. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/68682.

Council of Science Editors:

Larentis S. Electronic properties and electron-electron interaction effects in transition metal dichalcogenides. [Doctoral Dissertation]. University of Texas – Austin; 2018. Available from: http://hdl.handle.net/2152/68682


University of Texas – Austin

21. -2395-7588. Optoelectronic, structural, and topological properties of van der Waals layered materials under extreme conditions.

Degree: PhD, Electrical and Computer Engineering, 2018, University of Texas – Austin

 The concept of Internet of Things (IoT) has been discussed extensively in the recent years, where billions of smart devices and sensors communicate with each… (more)

Subjects/Keywords: 2D materials; Nanomaterials; Topological insulator; High-pressure; Strain engineering; Pressure engineering; Diamond anvil cell; Air-stability

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

-2395-7588. (2018). Optoelectronic, structural, and topological properties of van der Waals layered materials under extreme conditions. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/71474

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-2395-7588. “Optoelectronic, structural, and topological properties of van der Waals layered materials under extreme conditions.” 2018. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/71474.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-2395-7588. “Optoelectronic, structural, and topological properties of van der Waals layered materials under extreme conditions.” 2018. Web. 25 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-2395-7588. Optoelectronic, structural, and topological properties of van der Waals layered materials under extreme conditions. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2018. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/71474.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-2395-7588. Optoelectronic, structural, and topological properties of van der Waals layered materials under extreme conditions. [Doctoral Dissertation]. University of Texas – Austin; 2018. Available from: http://hdl.handle.net/2152/71474

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Texas – Austin

22. -7637-2220. Transition metal dichalcogenides heterostructure-based electronic and optoelectronic devices.

Degree: PhD, Electrical and Computer Engineering, 2019, University of Texas – Austin

 Advances in the techniques used to combine various two-dimensional (2D) materials into a single heterostructure with almost defect-free interfaces, along with the unique properties of… (more)

Subjects/Keywords: NDR; ReS₂; Ambipolar; ITFET; Rotational alignment; hBN

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

-7637-2220. (2019). Transition metal dichalcogenides heterostructure-based electronic and optoelectronic devices. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/5804

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-7637-2220. “Transition metal dichalcogenides heterostructure-based electronic and optoelectronic devices.” 2019. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://dx.doi.org/10.26153/tsw/5804.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-7637-2220. “Transition metal dichalcogenides heterostructure-based electronic and optoelectronic devices.” 2019. Web. 25 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-7637-2220. Transition metal dichalcogenides heterostructure-based electronic and optoelectronic devices. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2019. [cited 2021 Jan 25]. Available from: http://dx.doi.org/10.26153/tsw/5804.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-7637-2220. Transition metal dichalcogenides heterostructure-based electronic and optoelectronic devices. [Doctoral Dissertation]. University of Texas – Austin; 2019. Available from: http://dx.doi.org/10.26153/tsw/5804

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Texas – Austin

23. -8287-5083. Graphene and hexagonal boron nitride heterostructures for beyond CMOS applications.

Degree: PhD, Electrical and Computer engineering, 2016, University of Texas – Austin

 Scaling limits of conventional complementary metal oxide semiconductor (CMOS) technology has motivated the research of numerous beyond CMOS device concepts. One such device is the… (more)

Subjects/Keywords: Graphene; Hexagonal boron nitride; Heterostructures; Interlayer tunnel field-effect transistor

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

-8287-5083. (2016). Graphene and hexagonal boron nitride heterostructures for beyond CMOS applications. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/46178

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-8287-5083. “Graphene and hexagonal boron nitride heterostructures for beyond CMOS applications.” 2016. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/46178.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-8287-5083. “Graphene and hexagonal boron nitride heterostructures for beyond CMOS applications.” 2016. Web. 25 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-8287-5083. Graphene and hexagonal boron nitride heterostructures for beyond CMOS applications. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2016. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/46178.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-8287-5083. Graphene and hexagonal boron nitride heterostructures for beyond CMOS applications. [Doctoral Dissertation]. University of Texas – Austin; 2016. Available from: http://hdl.handle.net/2152/46178

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Texas – Austin

24. Lee, Kayoung. Quantum transport in bilayer graphene and its heterostructures.

Degree: PhD, Electrical and Computer Engineering, 2016, University of Texas – Austin

 Bilayer graphene represents an attractive two-dimensional electron system for electron physics and potential device applications. In this dissertation, we present a comprehensive experimental study of… (more)

Subjects/Keywords: Bilayer graphene; Quantum transport

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lee, K. (2016). Quantum transport in bilayer graphene and its heterostructures. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/68250

Chicago Manual of Style (16th Edition):

Lee, Kayoung. “Quantum transport in bilayer graphene and its heterostructures.” 2016. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/68250.

MLA Handbook (7th Edition):

Lee, Kayoung. “Quantum transport in bilayer graphene and its heterostructures.” 2016. Web. 25 Jan 2021.

Vancouver:

Lee K. Quantum transport in bilayer graphene and its heterostructures. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2016. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/68250.

Council of Science Editors:

Lee K. Quantum transport in bilayer graphene and its heterostructures. [Doctoral Dissertation]. University of Texas – Austin; 2016. Available from: http://hdl.handle.net/2152/68250


University of Texas – Austin

25. Lee, Alvin Lynghi. Towards reproducible graphene synthesis on optimized copper substrates.

Degree: PhD, Electrical and Computer engineering, 2016, University of Texas – Austin

 As more knowledge is accumulated in the synthesis of 2D materials, such as graphene, graphene analogues, and transition metal dichalcogenides (TMDs), we are confronted with… (more)

Subjects/Keywords: Graphene; Syntheisis; Copper; Thin film; Foil

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Lee, A. L. (2016). Towards reproducible graphene synthesis on optimized copper substrates. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/40311

Chicago Manual of Style (16th Edition):

Lee, Alvin Lynghi. “Towards reproducible graphene synthesis on optimized copper substrates.” 2016. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/40311.

MLA Handbook (7th Edition):

Lee, Alvin Lynghi. “Towards reproducible graphene synthesis on optimized copper substrates.” 2016. Web. 25 Jan 2021.

Vancouver:

Lee AL. Towards reproducible graphene synthesis on optimized copper substrates. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2016. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/40311.

Council of Science Editors:

Lee AL. Towards reproducible graphene synthesis on optimized copper substrates. [Doctoral Dissertation]. University of Texas – Austin; 2016. Available from: http://hdl.handle.net/2152/40311


University of Texas – Austin

26. Mantey, Jason Christopher. Epitaxial germanium via Ge:C and its use in non-classical semiconductor devices.

Degree: PhD, Electrical and Computer engineering, 2015, University of Texas – Austin

 The microelectronics industry has been using Silicon (Si) as the primary material for complementary metal-oxide-semiconductor (CMOS) chip fabrication for more than six decades. Throughout this… (more)

Subjects/Keywords: Germanium; Ge; Si; Silicon; SiGe; Nanowire; NW; TFET; FET; Tunnel field effect transistor; UHV; CVD

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Mantey, J. C. (2015). Epitaxial germanium via Ge:C and its use in non-classical semiconductor devices. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/33385

Chicago Manual of Style (16th Edition):

Mantey, Jason Christopher. “Epitaxial germanium via Ge:C and its use in non-classical semiconductor devices.” 2015. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/33385.

MLA Handbook (7th Edition):

Mantey, Jason Christopher. “Epitaxial germanium via Ge:C and its use in non-classical semiconductor devices.” 2015. Web. 25 Jan 2021.

Vancouver:

Mantey JC. Epitaxial germanium via Ge:C and its use in non-classical semiconductor devices. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2015. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/33385.

Council of Science Editors:

Mantey JC. Epitaxial germanium via Ge:C and its use in non-classical semiconductor devices. [Doctoral Dissertation]. University of Texas – Austin; 2015. Available from: http://hdl.handle.net/2152/33385


University of Texas – Austin

27. -2639-711X. Functionality enhancement of two-dimensional transition metal dichalcogenide-based transistors.

Degree: PhD, Electrical and Computer Engineering, 2019, University of Texas – Austin

 Atomically thin molybdenum disulfide (MoS₂) and tungsten diselenide (WSe₂), members of the transition metal dichalcogenide family, have emerged as prototypical two-dimensional semiconductors with a multitude… (more)

Subjects/Keywords: 2D; Transition metal dichalcogenides; MoS₂; WSe₂; Transistors; Functionality enhancement; Doping; Mobility engineering; Contact engineering

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

-2639-711X. (2019). Functionality enhancement of two-dimensional transition metal dichalcogenide-based transistors. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://dx.doi.org/10.26153/tsw/5793

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-2639-711X. “Functionality enhancement of two-dimensional transition metal dichalcogenide-based transistors.” 2019. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://dx.doi.org/10.26153/tsw/5793.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-2639-711X. “Functionality enhancement of two-dimensional transition metal dichalcogenide-based transistors.” 2019. Web. 25 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-2639-711X. Functionality enhancement of two-dimensional transition metal dichalcogenide-based transistors. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2019. [cited 2021 Jan 25]. Available from: http://dx.doi.org/10.26153/tsw/5793.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-2639-711X. Functionality enhancement of two-dimensional transition metal dichalcogenide-based transistors. [Doctoral Dissertation]. University of Texas – Austin; 2019. Available from: http://dx.doi.org/10.26153/tsw/5793

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Texas – Austin

28. -6008-5857. Advanced modeling for end-of-the-roadmap CMOS and potential beyond-CMOS applications.

Degree: PhD, Electrical and Computer engineering, 2016, University of Texas – Austin

 End-of-the-roadmap CMOS devices are explored via particle-based ensemble semi-classical Monte Carlo (MC) methods employing quantum corrections (QCs) to address quantum confinement and degenerate carrier populations.… (more)

Subjects/Keywords: FinFETs; Skyrmions; Monte Carlo; Density-functional theory

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

-6008-5857. (2016). Advanced modeling for end-of-the-roadmap CMOS and potential beyond-CMOS applications. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/40264

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-6008-5857. “Advanced modeling for end-of-the-roadmap CMOS and potential beyond-CMOS applications.” 2016. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/40264.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-6008-5857. “Advanced modeling for end-of-the-roadmap CMOS and potential beyond-CMOS applications.” 2016. Web. 25 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-6008-5857. Advanced modeling for end-of-the-roadmap CMOS and potential beyond-CMOS applications. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2016. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/40264.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-6008-5857. Advanced modeling for end-of-the-roadmap CMOS and potential beyond-CMOS applications. [Doctoral Dissertation]. University of Texas – Austin; 2016. Available from: http://hdl.handle.net/2152/40264

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete


University of Texas – Austin

29. Joseph, Praveen. Self-aligned integrated nanostructures fabricated by UV-nanoimprint lithography.

Degree: PhD, Mechanical Engineering, 2017, University of Texas – Austin

 Fabricating large-area multilevel integrated nanostructures and 3D nanoshapes are of tremendous importance for applications in the fields of nanoelectronics, nanophotonics, semiconductor memory, biosensors, and high… (more)

Subjects/Keywords: Semiconductors; Lithography; Nanoimprint lithography; UV-Nanoimprint lithography; Fabricating nanostructures; Multilevel nanostructure fabrication; 3D nanoshape fabrication; Nanoimprint templates

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Joseph, P. (2017). Self-aligned integrated nanostructures fabricated by UV-nanoimprint lithography. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/47360

Chicago Manual of Style (16th Edition):

Joseph, Praveen. “Self-aligned integrated nanostructures fabricated by UV-nanoimprint lithography.” 2017. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/47360.

MLA Handbook (7th Edition):

Joseph, Praveen. “Self-aligned integrated nanostructures fabricated by UV-nanoimprint lithography.” 2017. Web. 25 Jan 2021.

Vancouver:

Joseph P. Self-aligned integrated nanostructures fabricated by UV-nanoimprint lithography. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2017. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/47360.

Council of Science Editors:

Joseph P. Self-aligned integrated nanostructures fabricated by UV-nanoimprint lithography. [Doctoral Dissertation]. University of Texas – Austin; 2017. Available from: http://hdl.handle.net/2152/47360


University of Texas – Austin

30. -7182-108X. Towards high-density low-power spin-transfer-torque random access memory.

Degree: PhD, Electrical and Computer engineering, 2015, University of Texas – Austin

 In this work, we investigate the prospects for spin-transfer-torque random access memory (STTRAM) as the new generation low-power high-density non-volatile memory. Possible means to lower… (more)

Subjects/Keywords: STTRAM; Spin-transfer-torque; Multi-bit; Perpendicular magnetic anisotropy; Topological insulator; Write error rate

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

-7182-108X. (2015). Towards high-density low-power spin-transfer-torque random access memory. (Doctoral Dissertation). University of Texas – Austin. Retrieved from http://hdl.handle.net/2152/32409

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Chicago Manual of Style (16th Edition):

-7182-108X. “Towards high-density low-power spin-transfer-torque random access memory.” 2015. Doctoral Dissertation, University of Texas – Austin. Accessed January 25, 2021. http://hdl.handle.net/2152/32409.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

MLA Handbook (7th Edition):

-7182-108X. “Towards high-density low-power spin-transfer-torque random access memory.” 2015. Web. 25 Jan 2021.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Vancouver:

-7182-108X. Towards high-density low-power spin-transfer-torque random access memory. [Internet] [Doctoral dissertation]. University of Texas – Austin; 2015. [cited 2021 Jan 25]. Available from: http://hdl.handle.net/2152/32409.

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

Council of Science Editors:

-7182-108X. Towards high-density low-power spin-transfer-torque random access memory. [Doctoral Dissertation]. University of Texas – Austin; 2015. Available from: http://hdl.handle.net/2152/32409

Note: this citation may be lacking information needed for this citation format:
Author name may be incomplete

[1] [2] [3] [4]

.