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You searched for +publisher:"University of Illinois – Urbana-Champaign" +contributor:("Holonyak, Nick, Jr."). Showing records 1 – 6 of 6 total matches.

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University of Illinois – Urbana-Champaign

1. Dixon, Forest P. Design and development of distributed feedback transistor lasers.

Degree: PhD, 1200, 2010, University of Illinois – Urbana-Champaign

 The transistor laser is a unique three-port device that operates simultaneously as a transistor and a laser. With quantum wells incorporated in the base regions… (more)

Subjects/Keywords: Transistor laser; Distributed feedback; Nanoimprint lithography

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APA (6th Edition):

Dixon, F. P. (2010). Design and development of distributed feedback transistor lasers. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/16840

Chicago Manual of Style (16th Edition):

Dixon, Forest P. “Design and development of distributed feedback transistor lasers.” 2010. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed October 20, 2019. http://hdl.handle.net/2142/16840.

MLA Handbook (7th Edition):

Dixon, Forest P. “Design and development of distributed feedback transistor lasers.” 2010. Web. 20 Oct 2019.

Vancouver:

Dixon FP. Design and development of distributed feedback transistor lasers. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2010. [cited 2019 Oct 20]. Available from: http://hdl.handle.net/2142/16840.

Council of Science Editors:

Dixon FP. Design and development of distributed feedback transistor lasers. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/16840


University of Illinois – Urbana-Champaign

2. Cheng, Kuang. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications.

Degree: PhD, 1200, 2012, University of Illinois – Urbana-Champaign

 The prevalence of mobile computing devices and emerging demand for high data rate communication have motivated development of low power consumption, high performance circuits composed… (more)

Subjects/Keywords: Heterojunction Bipolar Transistor (HBT); Linearity; GaAsSb; Microwave Devices; Type-I DHBTs; Type-II DHBTs; Type-I/II DHBTs; Double Heterojunction Bipolar Transistor (DHBT)

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APA (6th Edition):

Cheng, K. (2012). Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/29462

Chicago Manual of Style (16th Edition):

Cheng, Kuang. “Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications.” 2012. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed October 20, 2019. http://hdl.handle.net/2142/29462.

MLA Handbook (7th Edition):

Cheng, Kuang. “Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications.” 2012. Web. 20 Oct 2019.

Vancouver:

Cheng K. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2012. [cited 2019 Oct 20]. Available from: http://hdl.handle.net/2142/29462.

Council of Science Editors:

Cheng K. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/29462


University of Illinois – Urbana-Champaign

3. James, Adam L. Process Development for High Speed Transistor Laser Operation.

Degree: PhD, 1200, 2011, University of Illinois – Urbana-Champaign

 The transistor laser (TL) o ers advantages over conventional diode laser structure. The TL uses high base doping and minority carrier collection to reduce the… (more)

Subjects/Keywords: Transistor Laser

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APA (6th Edition):

James, A. L. (2011). Process Development for High Speed Transistor Laser Operation. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18567

Chicago Manual of Style (16th Edition):

James, Adam L. “Process Development for High Speed Transistor Laser Operation.” 2011. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed October 20, 2019. http://hdl.handle.net/2142/18567.

MLA Handbook (7th Edition):

James, Adam L. “Process Development for High Speed Transistor Laser Operation.” 2011. Web. 20 Oct 2019.

Vancouver:

James AL. Process Development for High Speed Transistor Laser Operation. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2011. [cited 2019 Oct 20]. Available from: http://hdl.handle.net/2142/18567.

Council of Science Editors:

James AL. Process Development for High Speed Transistor Laser Operation. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18567


University of Illinois – Urbana-Champaign

4. Wu, Chao-Hsin. Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers.

Degree: PhD, 1200, 2011, University of Illinois – Urbana-Champaign

 Carrier spontaneous recombination lifetime has been thought to be limited to ~ 1 ns in light-emitting diodes and diode lasers for the past forty years.… (more)

Subjects/Keywords: Light-emitting transistor; light-emitting diode; tilted-charge; microcavity laser; transistor laser

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APA (6th Edition):

Wu, C. (2011). Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18587

Chicago Manual of Style (16th Edition):

Wu, Chao-Hsin. “Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers.” 2011. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed October 20, 2019. http://hdl.handle.net/2142/18587.

MLA Handbook (7th Edition):

Wu, Chao-Hsin. “Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers.” 2011. Web. 20 Oct 2019.

Vancouver:

Wu C. Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2011. [cited 2019 Oct 20]. Available from: http://hdl.handle.net/2142/18587.

Council of Science Editors:

Wu C. Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18587


University of Illinois – Urbana-Champaign

5. Chen, Eugene I-Chun. Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices.

Degree: PhD, Electrical Engineering, 1996, University of Illinois – Urbana-Champaign

 Impurity-induced layer disordering (IILD) and water vapor oxidation are also used to define a planar minidisk cavity in a superlattice (70 A AlAs + 30… (more)

Subjects/Keywords: Engineering, Electronics and Electrical; Physics, Condensed Matter; Engineering, Materials Science

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APA (6th Edition):

Chen, E. I. (1996). Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/23442

Chicago Manual of Style (16th Edition):

Chen, Eugene I-Chun. “Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices.” 1996. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed October 20, 2019. http://hdl.handle.net/2142/23442.

MLA Handbook (7th Edition):

Chen, Eugene I-Chun. “Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices.” 1996. Web. 20 Oct 2019.

Vancouver:

Chen EI. Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 1996. [cited 2019 Oct 20]. Available from: http://hdl.handle.net/2142/23442.

Council of Science Editors:

Chen EI. Selective oxidation of aluminum-bearing III-V semiconductors: Properties and applications to quantum well heterostructure lasers and transistor devices. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 1996. Available from: http://hdl.handle.net/2142/23442

6. Then, Han Wui. Characteristics, Theory and Modeling of the Transistor Laser.

Degree: PhD, 1200, 2010, University of Illinois – Urbana-Champaign

 The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and unique three-terminal electrical-optical characteristics for direct “read-out” of… (more)

Subjects/Keywords: transistor laser; light-emitting transistor; Heterojunction Bipolar Transistor (HBT); Diode Laser; Quantum Well; differential gain; recombination; current gain; tunnel junction

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Then, H. W. (2010). Characteristics, Theory and Modeling of the Transistor Laser. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/14740

Chicago Manual of Style (16th Edition):

Then, Han Wui. “Characteristics, Theory and Modeling of the Transistor Laser.” 2010. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed October 20, 2019. http://hdl.handle.net/2142/14740.

MLA Handbook (7th Edition):

Then, Han Wui. “Characteristics, Theory and Modeling of the Transistor Laser.” 2010. Web. 20 Oct 2019.

Vancouver:

Then HW. Characteristics, Theory and Modeling of the Transistor Laser. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2010. [cited 2019 Oct 20]. Available from: http://hdl.handle.net/2142/14740.

Council of Science Editors:

Then HW. Characteristics, Theory and Modeling of the Transistor Laser. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/14740

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