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You searched for +publisher:"University of Illinois – Urbana-Champaign" +contributor:("Feng, Milton"). Showing records 1 – 30 of 38 total matches.

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University of Illinois – Urbana-Champaign

1. Qiu, Junyi. Analysis of transistor laser intra-cavity photon-assisted tunneling for direct voltage modulation.

Degree: MS, Electrical & Computer Engr, 2016, University of Illinois – Urbana-Champaign

 High-speed optical interconnect made with semiconductor lasers is expected to play an important role in the upcoming age of big data. The technology of diode… (more)

Subjects/Keywords: Transistor Laser; Photon-Assisted Tunneling

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Qiu, J. (2016). Analysis of transistor laser intra-cavity photon-assisted tunneling for direct voltage modulation. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/95598

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Qiu, Junyi. “Analysis of transistor laser intra-cavity photon-assisted tunneling for direct voltage modulation.” 2016. Thesis, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/95598.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Qiu, Junyi. “Analysis of transistor laser intra-cavity photon-assisted tunneling for direct voltage modulation.” 2016. Web. 18 Nov 2019.

Vancouver:

Qiu J. Analysis of transistor laser intra-cavity photon-assisted tunneling for direct voltage modulation. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2016. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/95598.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Qiu J. Analysis of transistor laser intra-cavity photon-assisted tunneling for direct voltage modulation. [Thesis]. University of Illinois – Urbana-Champaign; 2016. Available from: http://hdl.handle.net/2142/95598

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

2. Winoto, Ardy. Development of antenna-coupled metal-insulator-metal diodes for infrared detection.

Degree: MS, Electrical & Computer Engineering, 2015, University of Illinois – Urbana-Champaign

 The long-wavelength infrared (LWIR) band between 7 and 14 µm is significant for thermal imaging purposes because it coincides with the blackbody radiation peak of… (more)

Subjects/Keywords: infrared (IR) detector; metal-insulator-metal (MIM) diode

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APA (6th Edition):

Winoto, A. (2015). Development of antenna-coupled metal-insulator-metal diodes for infrared detection. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/88202

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Winoto, Ardy. “Development of antenna-coupled metal-insulator-metal diodes for infrared detection.” 2015. Thesis, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/88202.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Winoto, Ardy. “Development of antenna-coupled metal-insulator-metal diodes for infrared detection.” 2015. Web. 18 Nov 2019.

Vancouver:

Winoto A. Development of antenna-coupled metal-insulator-metal diodes for infrared detection. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2015. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/88202.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Winoto A. Development of antenna-coupled metal-insulator-metal diodes for infrared detection. [Thesis]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/88202

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

3. Wang, Curtis Yilin. High-speed characterizations of single quantum-well transistor laser.

Degree: MS, Electrical & Computer Engineering, 2015, University of Illinois – Urbana-Champaign

 The transistor laser (TL) is a unique three-terminal semiconductor laser device that possesses qualities and functionalities that cannot be achieved by diode lasers alone. In… (more)

Subjects/Keywords: Transistor Laser; Bit Error Ration Testing

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APA (6th Edition):

Wang, C. Y. (2015). High-speed characterizations of single quantum-well transistor laser. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/89158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Wang, Curtis Yilin. “High-speed characterizations of single quantum-well transistor laser.” 2015. Thesis, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/89158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Wang, Curtis Yilin. “High-speed characterizations of single quantum-well transistor laser.” 2015. Web. 18 Nov 2019.

Vancouver:

Wang CY. High-speed characterizations of single quantum-well transistor laser. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2015. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/89158.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Wang CY. High-speed characterizations of single quantum-well transistor laser. [Thesis]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/89158

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

4. Bambery, Rohan. Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications.

Degree: MS, 1200, 2011, University of Illinois – Urbana-Champaign

 Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material… (more)

Subjects/Keywords: High Electron Mobility Transistor (HEMT); Aluminium Antimonide (AlSb); Indium Arsenide (InAs)

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APA (6th Edition):

Bambery, R. (2011). Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18297

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Bambery, Rohan. “Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications.” 2011. Thesis, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/18297.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Bambery, Rohan. “Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications.” 2011. Web. 18 Nov 2019.

Vancouver:

Bambery R. Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2011. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/18297.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Bambery R. Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications. [Thesis]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18297

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

5. Liu, Michael. Fabrication and characterization of resonant cavity light-emitting transistors.

Degree: MS, 1200, 2013, University of Illinois – Urbana-Champaign

 The development of optical interconnects and optical communication has enabled high-speed, energy-efficient and reliable data transmission in supercomputers and communication networks. Nowadays, with the improvement… (more)

Subjects/Keywords: Resonant Cavity; Light-Emitting Transistors; Resonant Cavity Light-Emitting Transistors

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APA (6th Edition):

Liu, M. (2013). Fabrication and characterization of resonant cavity light-emitting transistors. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/44489

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Liu, Michael. “Fabrication and characterization of resonant cavity light-emitting transistors.” 2013. Thesis, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/44489.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Liu, Michael. “Fabrication and characterization of resonant cavity light-emitting transistors.” 2013. Web. 18 Nov 2019.

Vancouver:

Liu M. Fabrication and characterization of resonant cavity light-emitting transistors. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2013. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/44489.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Liu M. Fabrication and characterization of resonant cavity light-emitting transistors. [Thesis]. University of Illinois – Urbana-Champaign; 2013. Available from: http://hdl.handle.net/2142/44489

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

6. Graham, Sean R. Distributed scalable model for CMOS FET power amplifier.

Degree: MS, 1200, 2011, University of Illinois – Urbana-Champaign

 Integrated circuits are very popular for understandable reasons. A circuit implemented within an IC is more cost effective and reliable. A vast majority of ICs… (more)

Subjects/Keywords: Radio Frequency (RF)+; Complementary metal???oxide???semiconductor (CMOS); Power Amplifier

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APA (6th Edition):

Graham, S. R. (2011). Distributed scalable model for CMOS FET power amplifier. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18454

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Graham, Sean R. “Distributed scalable model for CMOS FET power amplifier.” 2011. Thesis, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/18454.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Graham, Sean R. “Distributed scalable model for CMOS FET power amplifier.” 2011. Web. 18 Nov 2019.

Vancouver:

Graham SR. Distributed scalable model for CMOS FET power amplifier. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2011. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/18454.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Graham SR. Distributed scalable model for CMOS FET power amplifier. [Thesis]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18454

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation


University of Illinois – Urbana-Champaign

7. Xu, Huiming. High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications.

Degree: PhD, 1200, 2015, University of Illinois – Urbana-Champaign

 Heterojunction bipolar transistors (HBTs) are widely used in high-speed mixed-signal, radio frequency, and communication ICs because of their high speed, high breakdown voltage, and high… (more)

Subjects/Keywords: III-V; Heterojunction Bipolar Transistor (HBT); terahertz (THz); GaAsSb; Monolithic Microwave Integrated Circuit (MMIC); Radio Frequency (RF); Indium Phosphide (InP); High-Speed

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APA (6th Edition):

Xu, H. (2015). High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/72954

Chicago Manual of Style (16th Edition):

Xu, Huiming. “High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications.” 2015. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/72954.

MLA Handbook (7th Edition):

Xu, Huiming. “High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications.” 2015. Web. 18 Nov 2019.

Vancouver:

Xu H. High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2015. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/72954.

Council of Science Editors:

Xu H. High-speed Type-II GaAsSb/InP DHBTs for mixed-signal IC applications. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/72954


University of Illinois – Urbana-Champaign

8. Tan, Fei. Signal modulation and relative intensity noise properties of transistor laser and nano-cavity VCSEL.

Degree: PhD, 1200, 2014, University of Illinois – Urbana-Champaign

 The transistor laser (TL) is a novel three-port optoelectronic device that exhibits intrinsic advantages such as fast base spontaneous recombination lifetime, high differential optical gain,… (more)

Subjects/Keywords: Signal Modulation; Relative Intensity Noise; Transistor Laser; Nano-cavity vertical-cavity surface-emitting laser (VCSEL)

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APA (6th Edition):

Tan, F. (2014). Signal modulation and relative intensity noise properties of transistor laser and nano-cavity VCSEL. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/46808

Chicago Manual of Style (16th Edition):

Tan, Fei. “Signal modulation and relative intensity noise properties of transistor laser and nano-cavity VCSEL.” 2014. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/46808.

MLA Handbook (7th Edition):

Tan, Fei. “Signal modulation and relative intensity noise properties of transistor laser and nano-cavity VCSEL.” 2014. Web. 18 Nov 2019.

Vancouver:

Tan F. Signal modulation and relative intensity noise properties of transistor laser and nano-cavity VCSEL. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2014. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/46808.

Council of Science Editors:

Tan F. Signal modulation and relative intensity noise properties of transistor laser and nano-cavity VCSEL. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/46808


University of Illinois – Urbana-Champaign

9. Chan, Doris A. CMOS Power Device Modeling and Amplifier Circuits.

Degree: PhD, 1200, 2011, University of Illinois – Urbana-Champaign

 A power amplifier (PA) is a key part of the RF front-end in transmitters for a local broadband network. Today, commercial PAs are made of… (more)

Subjects/Keywords: Complementary Metal Oxide Semiconductor (CMOS); millimeter-wave; coplanar waveguide; Worldwide Interoperability for Microwave Access (WiMAX); power divider/combiner; power amplifier

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APA (6th Edition):

Chan, D. A. (2011). CMOS Power Device Modeling and Amplifier Circuits. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18249

Chicago Manual of Style (16th Edition):

Chan, Doris A. “CMOS Power Device Modeling and Amplifier Circuits.” 2011. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/18249.

MLA Handbook (7th Edition):

Chan, Doris A. “CMOS Power Device Modeling and Amplifier Circuits.” 2011. Web. 18 Nov 2019.

Vancouver:

Chan DA. CMOS Power Device Modeling and Amplifier Circuits. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2011. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/18249.

Council of Science Editors:

Chan DA. CMOS Power Device Modeling and Amplifier Circuits. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18249


University of Illinois – Urbana-Champaign

10. Wu, Mong-Kai. Development of vertical cavity transistor laser and microcavity laser.

Degree: PhD, 1200, 2014, University of Illinois – Urbana-Champaign

 An energy-efficient semiconductor laser is of great interest for the massive data transmission demands in butt computing servers and supercomputing technologies. Currently, commercial vertical-cavity surface-emitting… (more)

Subjects/Keywords: vertical cavity transistor laser; microcavity laser; surface-emitting vertical-cavity lasers; energy efficient

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APA (6th Edition):

Wu, M. (2014). Development of vertical cavity transistor laser and microcavity laser. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/49650

Chicago Manual of Style (16th Edition):

Wu, Mong-Kai. “Development of vertical cavity transistor laser and microcavity laser.” 2014. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/49650.

MLA Handbook (7th Edition):

Wu, Mong-Kai. “Development of vertical cavity transistor laser and microcavity laser.” 2014. Web. 18 Nov 2019.

Vancouver:

Wu M. Development of vertical cavity transistor laser and microcavity laser. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2014. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/49650.

Council of Science Editors:

Wu M. Development of vertical cavity transistor laser and microcavity laser. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2014. Available from: http://hdl.handle.net/2142/49650


University of Illinois – Urbana-Champaign

11. Liu, Michael E. Development of high speed vertical cavity surface-emitting semiconductor diode laser and transistor laser.

Degree: PhD, Electrical & Computer Engr, 2016, University of Illinois – Urbana-Champaign

 High speed semiconductor lasers are used in optical transceivers for short-reach data links. With fast-growing data capacity and traffic in the data centers around the… (more)

Subjects/Keywords: Vertical Cavity Surface-Emitting Laser; Vertical Cavity Transistor Laser

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APA (6th Edition):

Liu, M. E. (2016). Development of high speed vertical cavity surface-emitting semiconductor diode laser and transistor laser. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/92920

Chicago Manual of Style (16th Edition):

Liu, Michael E. “Development of high speed vertical cavity surface-emitting semiconductor diode laser and transistor laser.” 2016. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/92920.

MLA Handbook (7th Edition):

Liu, Michael E. “Development of high speed vertical cavity surface-emitting semiconductor diode laser and transistor laser.” 2016. Web. 18 Nov 2019.

Vancouver:

Liu ME. Development of high speed vertical cavity surface-emitting semiconductor diode laser and transistor laser. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2016. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/92920.

Council of Science Editors:

Liu ME. Development of high speed vertical cavity surface-emitting semiconductor diode laser and transistor laser. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2016. Available from: http://hdl.handle.net/2142/92920


University of Illinois – Urbana-Champaign

12. Nguyen, Giang D. Drifting-dipole noise model of nanometer MOSFETs for radio frequency integrated circuit design.

Degree: PhD, 1200, 2010, University of Illinois – Urbana-Champaign

 Recent advances in nanometer CMOS scaling technology have made transistors capable of operating at hundreds of gigahertz, and opened a new era of high performance,… (more)

Subjects/Keywords: Nanometer MOSFET; velocity saturation; drifting dipole noise, RFIC

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APA (6th Edition):

Nguyen, G. D. (2010). Drifting-dipole noise model of nanometer MOSFETs for radio frequency integrated circuit design. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/14706

Chicago Manual of Style (16th Edition):

Nguyen, Giang D. “Drifting-dipole noise model of nanometer MOSFETs for radio frequency integrated circuit design.” 2010. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/14706.

MLA Handbook (7th Edition):

Nguyen, Giang D. “Drifting-dipole noise model of nanometer MOSFETs for radio frequency integrated circuit design.” 2010. Web. 18 Nov 2019.

Vancouver:

Nguyen GD. Drifting-dipole noise model of nanometer MOSFETs for radio frequency integrated circuit design. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2010. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/14706.

Council of Science Editors:

Nguyen GD. Drifting-dipole noise model of nanometer MOSFETs for radio frequency integrated circuit design. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/14706


University of Illinois – Urbana-Champaign

13. Dixon, Forest P. Design and development of distributed feedback transistor lasers.

Degree: PhD, 1200, 2010, University of Illinois – Urbana-Champaign

 The transistor laser is a unique three-port device that operates simultaneously as a transistor and a laser. With quantum wells incorporated in the base regions… (more)

Subjects/Keywords: Transistor laser; Distributed feedback; Nanoimprint lithography

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APA (6th Edition):

Dixon, F. P. (2010). Design and development of distributed feedback transistor lasers. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/16840

Chicago Manual of Style (16th Edition):

Dixon, Forest P. “Design and development of distributed feedback transistor lasers.” 2010. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/16840.

MLA Handbook (7th Edition):

Dixon, Forest P. “Design and development of distributed feedback transistor lasers.” 2010. Web. 18 Nov 2019.

Vancouver:

Dixon FP. Design and development of distributed feedback transistor lasers. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2010. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/16840.

Council of Science Editors:

Dixon FP. Design and development of distributed feedback transistor lasers. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/16840


University of Illinois – Urbana-Champaign

14. James, Adam L. Process Development for High Speed Transistor Laser Operation.

Degree: PhD, 1200, 2011, University of Illinois – Urbana-Champaign

 The transistor laser (TL) o ers advantages over conventional diode laser structure. The TL uses high base doping and minority carrier collection to reduce the… (more)

Subjects/Keywords: Transistor Laser

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APA (6th Edition):

James, A. L. (2011). Process Development for High Speed Transistor Laser Operation. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18567

Chicago Manual of Style (16th Edition):

James, Adam L. “Process Development for High Speed Transistor Laser Operation.” 2011. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/18567.

MLA Handbook (7th Edition):

James, Adam L. “Process Development for High Speed Transistor Laser Operation.” 2011. Web. 18 Nov 2019.

Vancouver:

James AL. Process Development for High Speed Transistor Laser Operation. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2011. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/18567.

Council of Science Editors:

James AL. Process Development for High Speed Transistor Laser Operation. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18567


University of Illinois – Urbana-Champaign

15. Wu, Chao-Hsin. Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers.

Degree: PhD, 1200, 2011, University of Illinois – Urbana-Champaign

 Carrier spontaneous recombination lifetime has been thought to be limited to ~ 1 ns in light-emitting diodes and diode lasers for the past forty years.… (more)

Subjects/Keywords: Light-emitting transistor; light-emitting diode; tilted-charge; microcavity laser; transistor laser

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APA (6th Edition):

Wu, C. (2011). Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/18587

Chicago Manual of Style (16th Edition):

Wu, Chao-Hsin. “Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers.” 2011. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/18587.

MLA Handbook (7th Edition):

Wu, Chao-Hsin. “Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers.” 2011. Web. 18 Nov 2019.

Vancouver:

Wu C. Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2011. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/18587.

Council of Science Editors:

Wu C. Design, fabrication, and characterization of high-speed light-emitting transistors and microcavity lasers. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2011. Available from: http://hdl.handle.net/2142/18587


University of Illinois – Urbana-Champaign

16. Chabak, Kelson D. Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels.

Degree: PhD, Electrical & Computer Engr, 2016, University of Illinois – Urbana-Champaign

 This dissertation research effort explores new transistor topologies using three-dimensional nanowire (NW)-array channels formed by both bottom-up and top-down synthesis. The bottom-up NW research centers… (more)

Subjects/Keywords: nanowire transistor; High-electron-mobility transistor (HEMT); Fin field effect transistor (finFET); vapor-liquid-solid; gallium oxide; Metal–oxide–semiconductor field-effect transistor (MOSFET); wrap-gate

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APA (6th Edition):

Chabak, K. D. (2016). Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/95466

Chicago Manual of Style (16th Edition):

Chabak, Kelson D. “Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels.” 2016. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/95466.

MLA Handbook (7th Edition):

Chabak, Kelson D. “Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels.” 2016. Web. 18 Nov 2019.

Vancouver:

Chabak KD. Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2016. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/95466.

Council of Science Editors:

Chabak KD. Three-dimensional field-effect transistors with top-down and bottom-up nanowire-array channels. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2016. Available from: http://hdl.handle.net/2142/95466


University of Illinois – Urbana-Champaign

17. Song, Yi. Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques.

Degree: PhD, Electrical & Computer Engr, 2016, University of Illinois – Urbana-Champaign

 The aggressive downscaling of complementary metal–oxide–semiconductor (CMOS) technology is facing great challenges to overcome severe short-channel effects. Multigate MOSFETs are one of the most promising… (more)

Subjects/Keywords: Multigate; MOSFETs; FinFETs; High aspect ratio; Digital performance; High linearity; Metal-assisted chemical etching; Device design; TCAD simulation; transistors; device scaling; device fabrication

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APA (6th Edition):

Song, Y. (2016). Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/95501

Chicago Manual of Style (16th Edition):

Song, Yi. “Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques.” 2016. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/95501.

MLA Handbook (7th Edition):

Song, Yi. “Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques.” 2016. Web. 18 Nov 2019.

Vancouver:

Song Y. Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2016. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/95501.

Council of Science Editors:

Song Y. Multigate MOSFETs for digital performance and high linearity, and their fabrication techniques. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2016. Available from: http://hdl.handle.net/2142/95501


University of Illinois – Urbana-Champaign

18. Cheng, Chien-Chia. Fabrication of site-controlled quantum structures for optoelectronic devices.

Degree: PhD, 1200, 2012, University of Illinois – Urbana-Champaign

 Over the past two decades, there has been great interest in integrating semiconductor quantum dots (QDs) into electronic and optoelectronic devices, utilizing the three-dimensional quantum… (more)

Subjects/Keywords: Molecular beam epitaxy; Site-controlled; Quantum dots; Nanoimprint lithography; Quantum Structure Lattice; Optoelectronics

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APA (6th Edition):

Cheng, C. (2012). Fabrication of site-controlled quantum structures for optoelectronic devices. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/31946

Chicago Manual of Style (16th Edition):

Cheng, Chien-Chia. “Fabrication of site-controlled quantum structures for optoelectronic devices.” 2012. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/31946.

MLA Handbook (7th Edition):

Cheng, Chien-Chia. “Fabrication of site-controlled quantum structures for optoelectronic devices.” 2012. Web. 18 Nov 2019.

Vancouver:

Cheng C. Fabrication of site-controlled quantum structures for optoelectronic devices. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2012. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/31946.

Council of Science Editors:

Cheng C. Fabrication of site-controlled quantum structures for optoelectronic devices. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/31946


University of Illinois – Urbana-Champaign

19. Su, Guan-Lin. Modeling of devices for gallium-nitride-based integrated photonics.

Degree: PhD, Electrical & Computer Engr, 2016, University of Illinois – Urbana-Champaign

 Credited as "the most important semiconductor since silicon (Si)," gallium nitride (GaN) has received a tremendous amount of attention during the past two decades due… (more)

Subjects/Keywords: III-Nitrides (III-Ns); Self-assembled quantum dots (SAQDs); Integrated photonics

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APA (6th Edition):

Su, G. (2016). Modeling of devices for gallium-nitride-based integrated photonics. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/92916

Chicago Manual of Style (16th Edition):

Su, Guan-Lin. “Modeling of devices for gallium-nitride-based integrated photonics.” 2016. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/92916.

MLA Handbook (7th Edition):

Su, Guan-Lin. “Modeling of devices for gallium-nitride-based integrated photonics.” 2016. Web. 18 Nov 2019.

Vancouver:

Su G. Modeling of devices for gallium-nitride-based integrated photonics. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2016. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/92916.

Council of Science Editors:

Su G. Modeling of devices for gallium-nitride-based integrated photonics. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2016. Available from: http://hdl.handle.net/2142/92916


University of Illinois – Urbana-Champaign

20. Lee, Shih-hao. Efficient Finite Element Electromagnetic Analysis for High-Frequency/High-Speed Circuits And Multiconductor Transmission Lines.

Degree: PhD, Electrical and Computer Engineering, 2009, University of Illinois – Urbana-Champaign

 This dissertation comprises the following four components. (1) Development of a robust and efficient 3-D finite element electromagnetic field solver with high-order vector elements for… (more)

Subjects/Keywords: electromagnetics; microwave; finite element method (FEM); nodal elements; vector elements; edge elements; higher-order elements; triangular elements; tetrahedral elements; finite element analysis; full-wave analysis; impedance boundary condition; port boundary condition; wave port; lumped port; deembedding; thin-wire approximation; thin wire modeling; internal impedance; lumped elements; lumped circuits; field-circuit simulation; EM-circuit simulation; stamping; reduced-order modeling; model order reduction (MOR); fast frequency sweep; solution space projection (SSP); quasi-static analysis; quasi-TEM analysis; generalized eigenproblem; Lanczos algorithm; modal analysis; eigenanalysis; frequency-dependent media; anisotropic media; Debye model; multiconductor transmission lines; transmission line parameters; frequency-dependent losses; conductor loss; dielectric loss; substrate loss; characteristic impedance; skin effect; proximity effect; parameter extraction; resistance; inductance; capacitance; conductance; per-unit-length; composite conductors; waveguide; filter; coplanar waveguide (CPW); striplines; microstrip lines; high-frequency circuits; RF circuits; high-speed circuits; tree-cotree splitting; low-frequency breakdown; low-frequency instability; preconditioning; bonding wire; printed circuit board; multilayer printed circuit board (PCB); via-holes; signal integrity; electromagnetic coupling; interconnects; domain decomposition; Approximate Modal Interface (AMI); Approximate Modal Interface–Solution Space Projection (AMI–SSP); domain decomposition–model order reduction (DD–MOR); computer-aided design (CAD)

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APA (6th Edition):

Lee, S. (2009). Efficient Finite Element Electromagnetic Analysis for High-Frequency/High-Speed Circuits And Multiconductor Transmission Lines. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/11987

Chicago Manual of Style (16th Edition):

Lee, Shih-hao. “Efficient Finite Element Electromagnetic Analysis for High-Frequency/High-Speed Circuits And Multiconductor Transmission Lines.” 2009. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/11987.

MLA Handbook (7th Edition):

Lee, Shih-hao. “Efficient Finite Element Electromagnetic Analysis for High-Frequency/High-Speed Circuits And Multiconductor Transmission Lines.” 2009. Web. 18 Nov 2019.

Vancouver:

Lee S. Efficient Finite Element Electromagnetic Analysis for High-Frequency/High-Speed Circuits And Multiconductor Transmission Lines. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2009. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/11987.

Council of Science Editors:

Lee S. Efficient Finite Element Electromagnetic Analysis for High-Frequency/High-Speed Circuits And Multiconductor Transmission Lines. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2009. Available from: http://hdl.handle.net/2142/11987


University of Illinois – Urbana-Champaign

21. Kwon, Dae Hyun. Digitally enhanced CMOS RF transmitter with integrated power amplifier.

Degree: PhD, 1200, 2010, University of Illinois – Urbana-Champaign

 An energy-efficient, 3.5 GHz, direct-conversion RF transmitter with integrated 23 dBm, Class-B power amplifier (PA) is fabricated in a 0.13 μm CMOS process. The TX… (more)

Subjects/Keywords: Adaptive equalizer; AM-AM; AM-PM; Class-B power amplifier; Complementary metal-oxide semiconductor radio frequency (CMOS RF) transmitter; digital equalization; drain efficiency; error-vector magnitude; look-up table; memoryless nonlinearities; orthogonal frequency-division multiplexing (OFDM); peak-to-average power ratio; power-added efficiency; power amplifier; predistortion; Complementary metal–oxide–semiconductor (CMOS); Radio frequency (RF)

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APA (6th Edition):

Kwon, D. H. (2010). Digitally enhanced CMOS RF transmitter with integrated power amplifier. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/15601

Chicago Manual of Style (16th Edition):

Kwon, Dae Hyun. “Digitally enhanced CMOS RF transmitter with integrated power amplifier.” 2010. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/15601.

MLA Handbook (7th Edition):

Kwon, Dae Hyun. “Digitally enhanced CMOS RF transmitter with integrated power amplifier.” 2010. Web. 18 Nov 2019.

Vancouver:

Kwon DH. Digitally enhanced CMOS RF transmitter with integrated power amplifier. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2010. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/15601.

Council of Science Editors:

Kwon DH. Digitally enhanced CMOS RF transmitter with integrated power amplifier. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/15601


University of Illinois – Urbana-Champaign

22. Wang, Rui. Incorporation of feed-network and circuit modeling into the time-domain finite element analysis of antenna arrays and microwave circuits.

Degree: PhD, 1200, 2010, University of Illinois – Urbana-Champaign

 In this dissertation, accurate and efficient numerical algorithms are developed to incorporate the feed-network and circuit modeling into the time-domain finite element analysis of antenna… (more)

Subjects/Keywords: Time-domain finite element method; antenna arrays; domain decomposition; feed-network modeling; vector-fitting technique; hybrid solver; linear/nonlinear circuit simulation; transient analysis; admittance matrices; multiport lumped networks; recursive convolution; full-wave analysis; time marching; tree-cotree splitting; multi-rate simulation; time-stepping scheme

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APA (6th Edition):

Wang, R. (2010). Incorporation of feed-network and circuit modeling into the time-domain finite element analysis of antenna arrays and microwave circuits. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/16536

Chicago Manual of Style (16th Edition):

Wang, Rui. “Incorporation of feed-network and circuit modeling into the time-domain finite element analysis of antenna arrays and microwave circuits.” 2010. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/16536.

MLA Handbook (7th Edition):

Wang, Rui. “Incorporation of feed-network and circuit modeling into the time-domain finite element analysis of antenna arrays and microwave circuits.” 2010. Web. 18 Nov 2019.

Vancouver:

Wang R. Incorporation of feed-network and circuit modeling into the time-domain finite element analysis of antenna arrays and microwave circuits. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2010. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/16536.

Council of Science Editors:

Wang R. Incorporation of feed-network and circuit modeling into the time-domain finite element analysis of antenna arrays and microwave circuits. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/16536


University of Illinois – Urbana-Champaign

23. Lee, Seungchul. Digital calibration of nonlinear memory errors in sigma-delta ADCs.

Degree: PhD, 1200, 2012, University of Illinois – Urbana-Champaign

 Background digital calibration techniques based on an output-referred error model are proposed to linearize sigma-delta (ΣΔ) modulators. A sequential power series (a special form of… (more)

Subjects/Keywords: Analog-to-digital converter; ΣΔ modulator; low gain amplifier; nonlinear distortion; memory error; quantization noise leakage; digital calibration; correlation; test signal; digital-to-analog converter; capacitor mismatch; piecewise linear model; independent component analysis; multi-stage delta-sigma (MASH) structure

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APA (6th Edition):

Lee, S. (2012). Digital calibration of nonlinear memory errors in sigma-delta ADCs. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/34543

Chicago Manual of Style (16th Edition):

Lee, Seungchul. “Digital calibration of nonlinear memory errors in sigma-delta ADCs.” 2012. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/34543.

MLA Handbook (7th Edition):

Lee, Seungchul. “Digital calibration of nonlinear memory errors in sigma-delta ADCs.” 2012. Web. 18 Nov 2019.

Vancouver:

Lee S. Digital calibration of nonlinear memory errors in sigma-delta ADCs. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2012. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/34543.

Council of Science Editors:

Lee S. Digital calibration of nonlinear memory errors in sigma-delta ADCs. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/34543


University of Illinois – Urbana-Champaign

24. Cheng, Kuang. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications.

Degree: PhD, 1200, 2012, University of Illinois – Urbana-Champaign

 The prevalence of mobile computing devices and emerging demand for high data rate communication have motivated development of low power consumption, high performance circuits composed… (more)

Subjects/Keywords: Heterojunction Bipolar Transistor (HBT); Linearity; GaAsSb; Microwave Devices; Type-I DHBTs; Type-II DHBTs; Type-I/II DHBTs; Double Heterojunction Bipolar Transistor (DHBT)

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APA (6th Edition):

Cheng, K. (2012). Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/29462

Chicago Manual of Style (16th Edition):

Cheng, Kuang. “Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications.” 2012. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/29462.

MLA Handbook (7th Edition):

Cheng, Kuang. “Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications.” 2012. Web. 18 Nov 2019.

Vancouver:

Cheng K. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2012. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/29462.

Council of Science Editors:

Cheng K. Hot electron injection effect and improved linearity in type-I/II DHBT for millimeter-wave mixed signal circuit applications. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/29462


University of Illinois – Urbana-Champaign

25. Tseng, Richard Y. Vector modulators for analog-beamforming receivers.

Degree: PhD, 1200, 2010, University of Illinois – Urbana-Champaign

 This work focuses on new architectures for analog-beamforming receivers. In recent years, the drive for wireless communication techniques that can accomodate more users, provide higher… (more)

Subjects/Keywords: Vector modulator; radio frequency; beamformer; mixer; sigma delta

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APA (6th Edition):

Tseng, R. Y. (2010). Vector modulators for analog-beamforming receivers. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/15560

Chicago Manual of Style (16th Edition):

Tseng, Richard Y. “Vector modulators for analog-beamforming receivers.” 2010. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/15560.

MLA Handbook (7th Edition):

Tseng, Richard Y. “Vector modulators for analog-beamforming receivers.” 2010. Web. 18 Nov 2019.

Vancouver:

Tseng RY. Vector modulators for analog-beamforming receivers. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2010. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/15560.

Council of Science Editors:

Tseng RY. Vector modulators for analog-beamforming receivers. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/15560


University of Illinois – Urbana-Champaign

26. Kesler, Benjamin A. Mode control in VCSELs using patterned dielectric anti-phase filters.

Degree: PhD, Electrical & Computer Engr, 2017, University of Illinois – Urbana-Champaign

 A novel transverse mode control method to achieve single-fundamental-mode lasing and higher-order-mode suppression using a multi-layer, patterned, dielectric anti-phase (DAP) filter is employed on the… (more)

Subjects/Keywords: Anti-phase reflection; Dielectric filter; Mode control; Single mode; Vertical-cavity surface-emitting laser (VCSEL)

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APA (6th Edition):

Kesler, B. A. (2017). Mode control in VCSELs using patterned dielectric anti-phase filters. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/97656

Chicago Manual of Style (16th Edition):

Kesler, Benjamin A. “Mode control in VCSELs using patterned dielectric anti-phase filters.” 2017. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/97656.

MLA Handbook (7th Edition):

Kesler, Benjamin A. “Mode control in VCSELs using patterned dielectric anti-phase filters.” 2017. Web. 18 Nov 2019.

Vancouver:

Kesler BA. Mode control in VCSELs using patterned dielectric anti-phase filters. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2017. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/97656.

Council of Science Editors:

Kesler BA. Mode control in VCSELs using patterned dielectric anti-phase filters. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2017. Available from: http://hdl.handle.net/2142/97656

27. Iverson, Eric. Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications.

Degree: MS, 1200, 2012, University of Illinois – Urbana-Champaign

 Dynamic range characterization of double-heterojunction bipolar transistors is examined. The measurement procedures are detailed, along with a novel procedure for calibrating load-pull measurements using all… (more)

Subjects/Keywords: Indium Phospide (InP); double-heterojunction bipolar transistors (DHBT); Type-I; Type-II; Type-I/II; Hot Electron; Noise Figure; Linearity; third-order intercept point (IP3); Gain Compression; Dynamic Range

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APA (6th Edition):

Iverson, E. (2012). Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications. (Thesis). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/31018

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Chicago Manual of Style (16th Edition):

Iverson, Eric. “Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications.” 2012. Thesis, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/31018.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

MLA Handbook (7th Edition):

Iverson, Eric. “Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications.” 2012. Web. 18 Nov 2019.

Vancouver:

Iverson E. Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications. [Internet] [Thesis]. University of Illinois – Urbana-Champaign; 2012. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/31018.

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

Council of Science Editors:

Iverson E. Dynamic range characterization of indium-phosphide double-heterojunction bipolar transistors for ultralinear sub-millimeter wave applications. [Thesis]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/31018

Note: this citation may be lacking information needed for this citation format:
Not specified: Masters Thesis or Doctoral Dissertation

28. Then, Han Wui. Characteristics, Theory and Modeling of the Transistor Laser.

Degree: PhD, 1200, 2010, University of Illinois – Urbana-Champaign

 The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and unique three-terminal electrical-optical characteristics for direct “read-out” of… (more)

Subjects/Keywords: transistor laser; light-emitting transistor; Heterojunction Bipolar Transistor (HBT); Diode Laser; Quantum Well; differential gain; recombination; current gain; tunnel junction

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APA (6th Edition):

Then, H. W. (2010). Characteristics, Theory and Modeling of the Transistor Laser. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/14740

Chicago Manual of Style (16th Edition):

Then, Han Wui. “Characteristics, Theory and Modeling of the Transistor Laser.” 2010. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/14740.

MLA Handbook (7th Edition):

Then, Han Wui. “Characteristics, Theory and Modeling of the Transistor Laser.” 2010. Web. 18 Nov 2019.

Vancouver:

Then HW. Characteristics, Theory and Modeling of the Transistor Laser. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2010. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/14740.

Council of Science Editors:

Then HW. Characteristics, Theory and Modeling of the Transistor Laser. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2010. Available from: http://hdl.handle.net/2142/14740

29. Stuenkel, Mark E. Compact device modeling and millimeter-wave oscillator design for III-V HBT technology.

Degree: PhD, 0115, 2012, University of Illinois – Urbana-Champaign

 The double heterojunction bipolar transistor (DHBT), through its bandgap engineering, possesses several very favorable traits that allow it to operate at high frequencies while still… (more)

Subjects/Keywords: double heterojunction bipolar transistor (DHBT); Modeling; Oscillator; Millimeter-Wave

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APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Stuenkel, M. E. (2012). Compact device modeling and millimeter-wave oscillator design for III-V HBT technology. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/29484

Chicago Manual of Style (16th Edition):

Stuenkel, Mark E. “Compact device modeling and millimeter-wave oscillator design for III-V HBT technology.” 2012. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/29484.

MLA Handbook (7th Edition):

Stuenkel, Mark E. “Compact device modeling and millimeter-wave oscillator design for III-V HBT technology.” 2012. Web. 18 Nov 2019.

Vancouver:

Stuenkel ME. Compact device modeling and millimeter-wave oscillator design for III-V HBT technology. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2012. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/29484.

Council of Science Editors:

Stuenkel ME. Compact device modeling and millimeter-wave oscillator design for III-V HBT technology. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2012. Available from: http://hdl.handle.net/2142/29484

30. Iverson, Eric. Wideband direct conversion IQ modulators in indium phosphide DHBT technology.

Degree: PhD, 1200, 2015, University of Illinois – Urbana-Champaign

 High performance instrumentation has seen major benefits from custom integrated circuits in an indium phosphide double-heterojunction bipolar transistors (InP DHBT) (Low et al. 2005). The… (more)

Subjects/Keywords: Indium Phosphide; Double Heterojunction Bipolar Transistor; IQ Modulator; Quadrature Modulator; I/Q; IQ

Record DetailsSimilar RecordsGoogle PlusoneFacebookTwitterCiteULikeMendeleyreddit

APA · Chicago · MLA · Vancouver · CSE | Export to Zotero / EndNote / Reference Manager

APA (6th Edition):

Iverson, E. (2015). Wideband direct conversion IQ modulators in indium phosphide DHBT technology. (Doctoral Dissertation). University of Illinois – Urbana-Champaign. Retrieved from http://hdl.handle.net/2142/72927

Chicago Manual of Style (16th Edition):

Iverson, Eric. “Wideband direct conversion IQ modulators in indium phosphide DHBT technology.” 2015. Doctoral Dissertation, University of Illinois – Urbana-Champaign. Accessed November 18, 2019. http://hdl.handle.net/2142/72927.

MLA Handbook (7th Edition):

Iverson, Eric. “Wideband direct conversion IQ modulators in indium phosphide DHBT technology.” 2015. Web. 18 Nov 2019.

Vancouver:

Iverson E. Wideband direct conversion IQ modulators in indium phosphide DHBT technology. [Internet] [Doctoral dissertation]. University of Illinois – Urbana-Champaign; 2015. [cited 2019 Nov 18]. Available from: http://hdl.handle.net/2142/72927.

Council of Science Editors:

Iverson E. Wideband direct conversion IQ modulators in indium phosphide DHBT technology. [Doctoral Dissertation]. University of Illinois – Urbana-Champaign; 2015. Available from: http://hdl.handle.net/2142/72927

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